Gas transmission device, semiconductor processing device and working method thereof

Abstract

A gas transmission device, a semiconductor processing device and a working method thereof. The gas transmission device comprises: an evaporation source device (108) comprising an inlet (A) and an outlet (B) and holding an evaporation source; a carrier gas supply pipeline (104), wherein one end of the carrier gas supply pipeline is communicated with a carrier gas source, the other end of the carrier gas supply pipeline is communicated with the inlet (A), and the carrier gas enters the evaporation source device (108) and then carries evaporation source gas to form process gas; a process gas supply pipeline (107), wherein one end of the process gas supply pipeline is communicated with the outlet (B), and the other end of the process gas supply pipeline is communicated with a reaction chamber (100); and a purging gas pipeline (106), comprising a purging inlet pipeline (106a) and a purging outlet pipeline (106b), wherein the purging inlet pipeline (106a) is communicated with the carrier gas supply pipeline (104) by means of a first emptying pipeline (105), the purging outlet pipeline (106b) is communicated with the process gas supply pipeline (107) by means of a second emptying pipeline (117), a first control valve (111) is arranged on the first emptying pipeline (105), and a second control valve (114) is arranged on the second emptying pipeline (117). During the replacement of the evaporation source, the gas transmission device is unlikely to pollute the gas pipeline and does not affect the execution of a subsequent process.

Description

Gas transmission device, semiconductor processing device and working method thereof Technical Field

[0001] The present invention relates to the technical field of semiconductor processing equipment, and in particular to a gas transmission device, a semiconductor processing device and a working method thereof. Background Art

[0002] As shown in FIG1 , in the current thin film deposition device 1, one or more substrates 17 are placed flat on a heated substrate holder 16, which forms the bottom of a process chamber 18. A shower head 15 is provided on the top of the process chamber 18, and the shower head 15 is used to transport process gas into the process chamber 18. The shower head 15 is connected to a gas transmission device. The gas transmission device includes: an evaporation device 2, in which a solid or liquid starting material 3 is placed, and a carrier gas is input into the evaporation device 2 through a carrier gas feeding line 6. The carrier gas feeding line 6 is provided with two mass flow regulators 10 and 11 with different flow ranges. The mass flow regulator 11 may have a larger flow range than the mass flow regulator 10, for example. The mass flow regulator 10 or the mass flow regulator 11 is selected according to the needs. The evaporation device 2 has a heating device to evaporate the solid or liquid starting material 3 to form saturated vapor. The carrier gas carries the saturated vapor into the shower head 5 to transport process gas into the process chamber 18. The process gas forms a thin film on the surface of the substrate 17.

[0003] The above-mentioned gas transmission device is likely to cause contamination to the gas pipeline when replacing the evaporation source, thereby affecting the subsequent process. Technical Solutions

[0004] The purpose of the present invention is to provide a gas transmission device, a semiconductor processing device and a working method thereof, which are not likely to cause pollution to the gas pipeline when replacing the evaporation source and do not affect the subsequent process.

[0005] In order to solve the above problems, the present invention is achieved through the following technical solutions:

[0006] A gas transmission device, which is used to transport process gas into a reaction chamber of a semiconductor processing device, includes: an evaporation source device, which includes an inlet and an outlet, and contains an evaporation source; a carrier gas supply pipeline, one end of which is connected to the carrier gas source and the other end is connected to the inlet, and after the carrier gas enters the evaporation source device, it carries saturated evaporation source gas to form process gas; a process gas supply pipeline, one end of which is connected to the outlet and the other end is connected to the reaction chamber; a purge gas pipeline, which includes a purge inlet pipeline and a purge outlet pipeline, the purge inlet pipeline is connected to the carrier gas supply pipeline through a first exhaust pipeline, and the purge outlet pipeline is connected to the process gas supply pipeline through a second exhaust pipeline; a first control valve is provided on the first exhaust pipeline; and a second control valve is provided on the second exhaust pipeline.

[0007] Optionally, the first exhaust pipe includes a first end and a second end, the first end is connected to the carrier gas supply pipe, and the second end is connected to the purge inlet pipe; a flow controller and a first pneumatic valve are also arranged in sequence between the carrier gas source and the first end along the flow direction of the carrier gas.

[0008] Optionally, the second exhaust pipe includes a third end and a fourth end, the third end is connected to the process gas supply pipe, and the fourth end is connected to the purge outlet pipe; a second pneumatic valve and a pressure controller are also provided between the third end and the reaction chamber along the flow direction of the process gas.

[0009] Optionally, a gas pipeline is further provided between the upstream of the first pneumatic valve and the downstream of the second pneumatic valve, and a third pneumatic valve is further provided on the gas pipeline.

[0010] Optionally, a first replacement valve is further provided between the first end and the inlet; and a second replacement valve is further provided between the third end and the outlet.

[0011] Optionally, the evaporation source device includes a first evaporation source device and a second evaporation source device, the first evaporation source device includes a first inlet and a first outlet, the second evaporation source device includes a second inlet and a second outlet, the carrier gas supply pipeline is connected to the first inlet, the first outlet and the second inlet are connected through a series channel, a first replacement valve is further provided between the first end and the first inlet, a second replacement valve and a third replacement valve are provided on the series channel, and a fourth replacement valve is further provided between the third end and the second outlet, the first replacement valve and the second replacement valve are used to replace the first evaporation source device, and the third replacement valve and the fourth replacement valve are used to replace the second evaporation source device.

[0012] Optionally, it also includes: a switching channel, which includes two opposite ends, one end of the switching channel is connected to the carrier gas supply pipeline between the first end and the first switching valve, and the other end of the switching channel is connected to the series channel between the second switching valve and the third switching valve; a switching valve is provided on the switching channel.

[0013] Optionally, the system further includes: a third evaporation source device, wherein the first evaporation source device and the second evaporation source device are connected in series and then connected in parallel to the third evaporation source device.

[0014] Optionally, the purge gas pipeline includes a first purge gas pipeline and a second purge gas pipeline, the first purge gas pipeline includes a first purge inlet pipeline and a first purge outlet pipeline, the first purge inlet pipeline is connected to the first exhaust pipeline, the first purge outlet pipeline is connected to the second exhaust pipeline, the first purge gas pipeline, the first exhaust pipeline and the second exhaust pipeline are used to discharge the air in the pipelines of the first evaporation source device and the second evaporation source device; the second purge gas pipeline includes a second purge inlet pipeline and a second purge outlet pipeline, the second purge inlet pipeline is connected to the carrier gas supply pipeline through a third exhaust pipeline, and the second purge outlet pipeline is connected to the process gas supply pipeline through a fourth exhaust pipeline.

[0015] Optionally, the first purge outlet pipe is connected to the second purge inlet pipe; the semiconductor processing device further includes: a vacuum pump, and the second purge outlet pipe is connected to the vacuum pump.

[0016] Optionally, the carrier gas sources of the first evaporation source device and the second evaporation source device are independent of the carrier gas source of the third evaporation source device; the process gas supply pipelines of the first evaporation source device and the second evaporation source device and the process gas supply pipeline of the third evaporation source device are respectively connected to different inlets of the reaction chamber.

[0017] Optionally, the first evaporation source device, the second evaporation source device and the third evaporation source device share the same carrier gas source; the process gas supply pipelines of the first evaporation source device and the second evaporation source device are merged with the process gas supply pipeline of the third evaporation source device and are connected to the same inlet of the reaction chamber.

[0018] Optionally, it also includes: a dilution carrier gas channel, one end of which is connected to the dilution carrier gas source, and the other end of which is connected to the process gas supply pipeline, for diluting the process gas output from the evaporation source device to form a diluted process gas; a dilution process channel, one end of which is connected to the process gas supply pipeline, and the other end is connected to the reaction chamber.

[0019] Optionally, the process gas supply pipelines of the first evaporation source device and the second evaporation source device are first process gas supply pipelines, and the process gas supply pipeline of the third evaporation source device is second process gas supply pipeline; it also includes: a first dilution carrier gas channel and a second dilution carrier gas channel, one end of the first dilution carrier gas channel is connected to a first dilution carrier gas source, and the other end of the first dilution carrier gas channel is connected to the first process gas supply pipeline, for diluting the process gas output from the first evaporation source device and the second evaporation source device to form a first dilution process gas; a first dilution process channel, one end of which is connected to the first process gas supply pipeline, and the other end is connected to the reaction chamber; one end of the second dilution carrier gas channel is connected to a second dilution carrier gas source, and the other end of the second dilution carrier gas channel is connected to the second process gas supply pipeline, for diluting the process gas output from the third evaporation source device to form a second dilution process gas; a second dilution process channel, one end of which is connected to the second process gas supply pipeline, and the other end is connected to the reaction chamber.

[0020] Optionally, the carrier gas sources of the first and second evaporation source devices, the carrier gas source of the third evaporation source device, the first dilution carrier gas source and the second dilution carrier gas source are independent of each other; the first dilution process gas supply pipeline and the second dilution process gas supply pipeline are respectively connected to different inlets of the reaction chamber.

[0021] Optionally, the carrier gas sources of the first evaporation source device and the second evaporation source device, the carrier gas source of the third evaporation source device, the first dilution carrier gas source and the second dilution carrier gas source share the same carrier gas source; the first dilution process gas supply pipeline and the second dilution process gas supply pipeline are merged and connected to the same inlet of the reaction chamber.

[0022] On the other hand, the present invention also provides a semiconductor processing device, comprising: a reaction chamber; a base located at the bottom of the reaction chamber and used to support a substrate; a shower head arranged opposite to the base; and the above-mentioned gas transmission device connected to the shower head and used to transport process gas into the reaction chamber.

[0023] Correspondingly, the present invention also provides a working method of a semiconductor processing device, comprising: providing the above-mentioned semiconductor processing device; opening the first control valve to evacuate the gas in the carrier gas supply pipeline; opening the second control valve to evacuate the gas in the process gas supply pipeline.

[0024] Optionally, the first exhaust pipe includes a first end and a second end, the first end is connected to the carrier gas supply pipe, and the second end is connected to the purge inlet pipe; a first pneumatic valve is also arranged in sequence between the carrier gas source and the first end along the flow direction of the carrier gas; the second exhaust pipe includes a third end and a fourth end, the third end is connected to the process gas supply pipe, and the fourth end is connected to the purge outlet pipe; a second pneumatic valve is also arranged between the third end and the reaction chamber along the flow direction of the process gas; the working method of the semiconductor processing device also includes: when process treatment is carried out in the reaction chamber, the first control valve and the second control valve are closed, and the first pneumatic valve and the second pneumatic valve are opened.

[0025] Optionally, a first replacement valve is further provided between the first end and the inlet; a second replacement valve is further provided between the third end and the outlet; and before opening the first control valve and the second control valve, the method further includes: closing the first control valve, the second control valve, the first pneumatic valve and the second pneumatic valve, and disassembling the evaporation source device through the first replacement valve and the second replacement valve. Beneficial effects

[0026] Compared with the prior art, the technical solution of the present invention has the following beneficial effects:

[0027] In a gas transmission device provided by the present invention, a purge gas pipeline is additionally provided, and the purge gas pipeline includes a purge inlet pipeline and a purge outlet pipeline. The purge inlet pipeline is connected to the carrier gas supply pipeline through a first exhaust pipeline, and the purge outlet pipeline is connected to the process gas supply pipeline through a second exhaust pipeline. By opening the first control valve on the first exhaust pipeline, the gas in the carrier gas supply pipeline is facilitated to be discharged, and by opening the second control valve on the second exhaust pipeline, the gas in the process gas supply pipeline is facilitated to be discharged. This helps to avoid the adverse effects of unwanted gases remaining in the carrier gas supply pipeline and the process gas supply pipeline on subsequent processes. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] FIG1 is a schematic structural diagram of a thin film deposition device;

[0029] FIG2 is a schematic structural diagram of a semiconductor processing device according to the present invention;

[0030] FIG3 is a schematic structural diagram of the gas transmission device in FIG2 ;

[0031] FIG4 is a schematic structural diagram of another gas transmission device of the present invention;

[0032] FIG5 is a schematic structural diagram of another semiconductor processing device according to the present invention;

[0033] FIG6 is a schematic structural diagram of another semiconductor processing device according to the present invention;

[0034] FIG7 is a schematic structural diagram of another semiconductor processing device according to the present invention;

[0035] FIG8 is a schematic structural diagram of another gas transmission device of the present invention;

[0036] FIG9 is a schematic structural diagram of another semiconductor processing device according to the present invention;

[0037] FIG10 is a schematic structural diagram of another semiconductor processing device according to the present invention;

[0038] FIG. 11 is a flow chart of a method for operating a semiconductor processing device according to the present invention. Modes for Carrying Out the Invention

[0039] The following is a further detailed description of a gas transmission device and a semiconductor processing device proposed by the present invention in conjunction with the accompanying drawings and specific embodiments. According to the following description, the advantages and features of the present invention will be clearer. It should be noted that the drawings are in a very simplified form and are not in precise proportions, which are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention. In order to make the purposes, features and advantages of the present invention more obvious and easy to understand, please refer to the accompanying drawings. It should be noted that the structures, proportions, sizes, etc. illustrated in the drawings of this specification are only used to match the contents disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the conditions for the implementation of the present invention, so they have no technical significance. Any modification of the structure, change in the proportional relationship or adjustment of the size should still fall within the scope of the technical content disclosed by the present invention without affecting the efficacy and purpose that can be achieved by the present invention.

[0040] The present invention provides a gas transmission device, a semiconductor processing device and a working method thereof, wherein the gas transmission device is added with a purge gas pipeline, the purge gas pipeline including a purge inlet pipeline and a purge outlet pipeline, the purge inlet pipeline is connected to the carrier gas supply pipeline through a first exhaust pipeline, and the purge outlet pipeline is connected to the process gas supply pipeline through a second exhaust pipeline. When the evaporation source device is replaced, the air entering the carrier gas supply pipeline and the process gas supply pipeline is respectively discharged through the first exhaust pipeline and the second exhaust pipeline, so that when the gas transmission device is subsequently used, residual water and oxygen in the air will not collide with the MO source, which can avoid adverse consequences such as explosion or reaction caused by water and oxygen collide with the MO source.

[0041] The details are as follows:

[0042] As shown in FIG2 , the semiconductor processing apparatus includes: a reaction chamber 100; a base 102 located in the reaction chamber 100 and used to support a substrate; a shower head 101 disposed at the top of the reaction chamber 100 and arranged opposite to the base 102 , and the shower head 101 is connected to a gas transmission device for delivering process gas into the reaction chamber 100 .

[0043] A thin film deposition process is performed in the reaction chamber 100 . Accordingly, the semiconductor processing device is a thin film deposition device, such as a metal organic chemical vapor deposition device.

[0044] 2 and 3 , the gas transmission device includes: an evaporation source device 108 including an inlet A and an outlet B, wherein an evaporation source liquid is contained; a carrier gas supply conduit 104, one end of which is connected to a carrier gas source (not shown) and the other end of which is connected to the inlet A. The carrier gas provided by the carrier gas source enters the evaporation source device 108 and carries the evaporation source gas to form a process gas; a process gas supply conduit 107, one end of which is connected to the outlet B and the other end of which is connected to the reaction chamber 100; and a purge gas conduit 106, which includes a purge inlet conduit 106a and a purge outlet conduit 106b. The purge inlet conduit 106a is connected to the carrier gas supply conduit 104 via a first exhaust conduit 105, and the purge outlet conduit 106b is connected to the process gas supply conduit 107 via a second exhaust conduit 117 (see FIG. 3 ). A first control valve 111 is provided on the first exhaust conduit 105, and a second control valve 114 is provided on the second exhaust conduit 117.

[0045] The first exhaust pipe 105 includes a first end C and a second end D, the first end C is connected to the carrier gas supply pipe 104, and the second end D is connected to the purge inlet pipe 106a; a flow controller 108 and a first pneumatic valve 110 are also arranged in sequence between the carrier gas source and the first end C along the flow direction of the carrier gas.

[0046] The second exhaust pipe 117 includes a third end E and a fourth end F, the third end E is connected to the process gas supply pipe 107, and the fourth end F is connected to the purge outlet pipe 106b; a second pneumatic valve 112 and a pressure controller 109 are also provided between the third end E and the reaction chamber 100 along the flow direction of the process gas.

[0047] A gas pipeline 120 is further provided between the upstream of the first pneumatic valve 110 and the downstream of the second pneumatic valve 112. A third pneumatic valve 113 is further provided on the gas pipeline 120. The upstream of the first pneumatic valve 110 is defined according to the flow direction of the carrier gas. Specifically, the upstream of the first pneumatic valve 110 refers to the carrier gas supply pipeline 104 between the flow controller 108 and the first pneumatic valve 110. The downstream of the second pneumatic valve 112 is defined according to the flow direction of the process gas. Specifically, the downstream of the second pneumatic valve 112 refers to the process gas supply pipeline 107 between the second pneumatic valve 112 and the pressure controller 109.

[0048] When process treatment is required in the reaction chamber 100, the first pneumatic valve 110 and the second pneumatic valve 112 are opened, and the third pneumatic valve 113, the first control valve 111 and the second control valve 114 are closed. In this way, the carrier gas enters the evaporation source device 108 from the carrier gas source through the carrier gas supply channel 104 and the first pneumatic valve 110. The evaporation source device 108 has a constant temperature water bath. The constant temperature water bath maintains a stable temperature, which can be 25°C, 5°C, or other required water temperature, and is kept constant. The constant temperature water bath can heat the evaporation source liquid contained in the evaporation source device 108 to form saturated steam. The carrier gas carries the saturated steam to form process gas. The process gas passes through the second pneumatic valve 112 and the pressure controller 109 in sequence and then enters the reaction chamber 100 to form a thin film on the surface of the substrate.

[0049] Regardless of whether a process is being performed in the reaction chamber 100, the carrier gas source remains in operation. When no process is being performed in the reaction chamber 100, the first and second pneumatic valves 110 and 112 are closed, and the third pneumatic valve 113 is opened, allowing carrier gas to enter the reaction chamber 100 through the third pneumatic valve 113. The semiconductor processing apparatus further includes a vacuum pump 103, which is in communication with the reaction chamber 100 and is configured to control the pressure within the reaction chamber 100. When no process is being performed in the reaction chamber 100, the carrier gas that has entered the reaction chamber 100 is evacuated by the vacuum pump 103.

[0050] Different processes require different evaporation sources, or when the evaporation source does not meet process requirements, the evaporation source assembly 108 must be replaced. To facilitate replacement of the evaporation source assembly 108, a first replacement valve 115 is provided between the first end C and the inlet A, and a second replacement valve 116 is provided between the third end E and the outlet B. The evaporation source assembly 108 can be replaced by removing the first and second replacement valves 115 and 116.

[0051] However, when removing the first and second replacement valves 115 and 116, air can easily enter the carrier gas supply line 104 and the process gas supply line 107. If the air in the carrier gas supply line 104 is not evacuated, it will enter the evaporation source device 108 along with the carrier gas during the next process. The evaporation source device 108 contains MO source gas, such as TMGa (trimethylgallium), TMAl (trimethylaluminum), TEGa (triethylgallium), Cp2Mg (P-type dopant), or TMIn (trimethylindium). MO source gas is prone to explosion or reaction when exposed to air. Furthermore, air entering the process gas supply line 107 will enter the reaction chamber 100 along with the process gas, potentially affecting the environment within the reaction chamber 100.

[0052] To avoid the above problems, before the next process is carried out in the reaction chamber 100, the air entering the carrier gas supply pipe 104 and the process gas supply pipe 107 is discharged through the first exhaust pipe 105 and the second exhaust pipe 117 respectively. Specifically, the first pneumatic valve 110 and the second pneumatic valve 112 are closed, and the pneumatic valve 113, the first control valve 115 and the second control valve 116 are opened, so that the purge gas in the purge inlet pipe 106a can purge the air in the carrier gas supply pipe 104, and the purge gas in the purge outlet pipe 106b can purge the air in the process gas supply pipe 117. In this way, the above problems will not occur when the process gas is subsequently transported into the reaction chamber 100.

[0053] In this embodiment, the number of the evaporation source device 108 is one.

[0054] FIG4 is a schematic structural diagram of another gas transmission device of the present invention.

[0055] Please refer to Figure 4. The carrier gas supply pipeline 104, flow controller 108, first pneumatic valve 110, second pneumatic valve 112, third pneumatic valve 113, pressure controller 109 and process gas supply pipeline 107 are the same as those in the gas transmission device in Figure 3 and are not repeated here.

[0056] In this embodiment, there are two evaporation source devices, namely a first evaporation source device 108 and a second evaporation source device 130. The first evaporation source device 108 includes a first inlet A and a first outlet B, and the second evaporation source device 130 includes a second inlet G and a second outlet I. The carrier gas supply pipeline 104 is connected to the first inlet A, and the first outlet B and the second inlet G are connected via a series channel 121. A first replacement valve 115 is further provided between the first end C and the first inlet A. A second replacement valve 123 and a third replacement valve 124 are provided on the series channel 121. A fourth replacement valve 122 is further provided between the third end E and the second outlet I. The first replacement valve 115 and the second replacement valve 123 are used to replace the first evaporation source device 108, and the third replacement valve 124 and the fourth replacement valve 122 are used to replace the second evaporation source device 130.

[0057] The gas transmission device further includes a switching channel 190. One end of the switching channel 190 is connected to the carrier gas supply pipeline 104 between the first end C and the first switching valve 115. The other end of the switching channel 190 is connected to the series channel between the second switching valve 123 and the third switching valve 124. The switching valve 121 is provided on the switching channel 190.

[0058] When process treatment is required in the reaction chamber and the evaporation source liquids in the first evaporation source device 108 and the second evaporation source device 130 are not exhausted, and both the first evaporation source device 108 and the second evaporation source device 130 need to be used, the third pneumatic valve 113, the first control valve 111, the second control valve 114, and the switching valve 121 are closed, and the first pneumatic valve 110, the first replacement valve 115, the second replacement valve 123, the third replacement valve 124, the fourth replacement valve 122, and the second pneumatic valve 112 are opened, so that the carrier gas enters the first evaporation source device 108 through the carrier gas supply pipe 104, and then passes through the second evaporation source device 130 to form process gas. The process gas is then transported into the reaction chamber 100 through the process gas supply pipe 107.

[0059] When the evaporation source in the first evaporation source device 108 is exhausted, but the evaporation source in the second evaporation source device 130 still has some, the third pneumatic valve 113, the first control valve 111, the second control valve 114, the first replacement valve 115, and the second replacement valve 123 are closed, and the first pneumatic valve 110, the switching valve 121, the third replacement valve 124, the fourth replacement valve 122, and the second pneumatic valve 122 are opened, so that the carrier gas flows from the carrier gas source through the first pneumatic valve 110, the switching pipe 120, the series pipe 121, and the third replacement valve 124 in sequence into the second evaporation source device 130, and the resulting process gas is transported to the reaction chamber for process treatment.

[0060] It should be noted that when the first evaporation source device 108 is used up and the second evaporation source device 130 is still available, if the first evaporation source device 130 can still meet the process requirements, the first evaporation source device 108 can be temporarily retained without replacement.

[0061] When the evaporation source liquids in the first evaporation source device 108 and the second evaporation source device 130 are completely used up, the first evaporation source device 108 and the second evaporation source device 130 are replaced by removing the first replacement valve 115 , the second replacement valve 123 , the third replacement valve 124 , and the fourth replacement valve 122 .

[0062] When the first and second evaporation source devices 108 and 130 are removed, air is likely to enter the carrier gas supply pipeline, the serial pipeline 120, and the process gas supply pipeline 107. To reduce the adverse effects of this air on subsequent supply, before the next process is performed, the first pneumatic valve 110, the second pneumatic valve 112, the first replacement valve 115, the second replacement valve 123, the third replacement valve 124, and the fourth replacement valve 122 are closed, and the third pneumatic valve 113, the first control valve 111, the second control valve 114, and the switching valve 121 are opened. This allows the air in the carrier gas supply pipeline 104 and the serial pipeline 120 to be evacuated through the purge inlet pipeline 106a, and the air in the process gas supply pipeline 107 to be evacuated through the purge outlet pipeline 106b. Thus, the adverse effects of air introduced during the replacement of the first and second evaporation source devices 108 and 130 can be avoided.

[0063] FIG5 is a schematic structural diagram of another semiconductor processing device according to the present invention.

[0064] In this embodiment, the evaporation source device includes a first evaporation source device 108a, a second evaporation source device 130, and a third evaporation source device 108b, wherein the first evaporation source device 108a and the second evaporation source device 130 are connected in series through a series channel, and after the first evaporation source device 108a and the second evaporation source device 130 are connected in series, they are connected in parallel with the third evaporation source device 108b.

[0065] When the first, second, and third evaporation source devices 108a, 130, and 108b need to be replaced, air can easily enter the pipes. The pipes for air entry are similar to those in the previous embodiment and are not described in detail here. To exhaust air from the pipes, the first and second evaporation source devices 108a, 130 have first purge gas pipes. The first purge inlet pipe 106a of the first purge gas pipes communicates with the first exhaust pipe 105a, and the first purge outlet pipe 106b of the first purge gas pipes communicates with the second exhaust pipe 117a, for exhausting air from the pipes of the first and second evaporation source devices 108a, 130. The third evaporation source device 108b has a second purge gas pipe. The second purge inlet pipe 106c of the second purge gas pipes communicates with the third exhaust pipe 105b, and the second purge outlet pipe 106d of the second purge gas pipes communicates with the fourth exhaust pipe 117b, for exhausting air from the pipes of the evaporation source device 108b.

[0066] The first purge outlet pipe 106b is in communication with the second purge inlet pipe 106c, and the second purge outlet pipe 106d is in communication with the vacuum pump 103 for exhausting air in the pipes.

[0067] In this embodiment, the carrier gas supply pipeline 104a of the first evaporation source device 108a and the second evaporation source device 130 and the carrier gas supply pipeline 104b of the third evaporation source device 108a are independent of each other; the process gas supply pipeline 107a of the first evaporation source device 108a and the second evaporation source device 130 and the process gas supply pipeline 107b of the third evaporation source device 108b are independent of each other and are respectively connected to different inlets of the shower head 101 to respectively provide process gases into the reaction chamber 100 to form a thin film on the surface of the substrate 102.

[0068] FIG6 is a schematic structural diagram of another semiconductor processing device according to the present invention.

[0069] The embodiment shown in FIG6 is the same as FIG5 in that the evaporation source device 108a and the evaporation source device 130 are connected in series through a series channel, and the evaporation source device 108a and the evaporation source device 130 are connected in series and then connected in parallel with the evaporation source device 108b.

[0070] The embodiment shown in FIG6 differs from FIG5 in that: in the embodiment of FIG5 , carrier gas supply pipes 104a and 104b are connected to different carrier gas sources, and process gas supply pipes 107a and 107b are connected to different inlets of the showerhead 101. In the embodiment of FIG6 , carrier gas supply pipes 104a and 104b are connected to the same carrier gas source, which is then divided into two branches, respectively connected to carrier gas supply pipes 104a and 104b. Furthermore, process gas supply pipes 107a and 107b merge and are connected to the same inlet of the showerhead 101.

[0071] In the above embodiment, the concentration of the process gas coming out of the evaporation source device is relatively high, which is suitable for the case where a high concentration of process gas is required in the reaction chamber 100. When a low concentration of process gas is required in the reaction chamber 100, this can be achieved through the following design:

[0072] FIG. 7 is a schematic structural diagram of another semiconductor processing device according to the present invention.

[0073] The carrier gas supply pipeline 104 , the evaporation source device 108 and the process supply pipeline 107 in the gas transmission device in FIG7 are the same as those in the embodiment shown in FIG2 , and are not described in detail here.

[0074] In this embodiment, the carrier gas is transported from the carrier gas source through the carrier gas supply pipe 104 to the evaporation source device 108 to form a mixed gas of saturated evaporation source gas and carrier gas, that is, to form process gas. The process gas is transported to the shower head 101 to form a thin film on the surface of the substrate on the base 102 in the reaction chamber 100.

[0075] Because the concentration of MO source gas in the process gas formed after the carrier gas passes through the evaporation source device 108 is relatively high, while the concentration of MO source gas required in the reaction chamber 100 is relatively low, in this embodiment, the gas transmission device further includes: a dilution carrier gas channel 130, one end of which is connected to the dilution carrier gas source and the other end of which is connected to the process gas supply pipeline 107; and a dilution process channel 131, one end of which is connected to the process gas supply pipeline 107 and the other end of which is connected to the showerhead 101. The carrier gas in the dilution carrier gas channel 130 dilutes the process gas in the process gas supply pipeline 107, thereby reducing the concentration of the process gas in the dilution process channel 131 to meet the required process gas concentration in the reaction chamber 100.

[0076] FIG8 is a schematic structural diagram of another semiconductor processing device according to the present invention.

[0077] There are two evaporation source devices in FIG8 . The purge gas pipeline, the first exhaust pipeline, the second exhaust pipeline, the carrier gas supply pipeline 104 and the process gas supply pipeline 107 are the same as those in FIG4 , and are not described in detail here.

[0078] Because the MO source gas concentration in process gas supply pipeline 107 is high, while the required MO source gas concentration in the reaction chamber is low, a dilution carrier gas channel 230 is added. One end of the dilution carrier gas channel 230 is connected to the dilution carrier gas source, and the other end of the dilution carrier gas channel 230 is connected to the process gas supply pipeline 107. A dilution process channel 231 is connected to the process gas supply pipeline 107 at one end and to the showerhead at the other end. The carrier gas in dilution carrier gas channel 230 dilutes the process gas in process gas supply pipeline 107, reducing the concentration of the process gas in dilution process channel 231 to meet the required process gas concentration in the reaction chamber.

[0079] FIG9 is a schematic structural diagram of another semiconductor processing device according to the present invention.

[0080] In FIG9 , the evaporation source device 108 a and the evaporation source device 130 are connected in series through a series channel. After the evaporation source device 108 a and the evaporation source device 130 are connected in series, they are connected in parallel with the evaporation source device 108 b .

[0081] In this embodiment, the carrier gas supply pipeline 104a and the carrier gas supply pipeline 104b share a carrier gas source, and the same as Figure 6 also includes: the process gas supply pipeline 107a and the process gas supply pipeline 107b are merged and input into the reaction chamber 100, and the purge gas pipeline, the first exhaust pipeline and the second exhaust pipeline are the same as those in Figure 6 and are not repeated here.

[0082] The gas transmission device also includes: a first dilution carrier gas pipeline 330a and a second dilution carrier gas pipeline 330b, the first dilution carrier gas pipeline 330a is used to dilute the process gas in the process gas supply pipeline 107a, and the second dilution carrier gas pipeline 330b is used to dilute the process gas in the process gas supply pipeline 107b.

[0083] In this embodiment, the first dilution carrier gas pipeline 330a, the second dilution carrier gas pipeline 330b, the carrier gas supply pipeline 104a and the carrier gas supply pipeline 104b share a common carrier gas source.

[0084] One end of the first dilution carrier gas channel 330a is connected to the dilution carrier gas source, and the other end of the first dilution carrier gas channel 330a is connected to the process gas supply pipeline 107a; one end of the first dilution process channel 331a is connected to the process gas supply pipeline 107a, and the carrier gas in the first dilution carrier gas channel 330a dilutes the process gas in the process gas supply pipeline 107a, so that the concentration of the process gas in the first dilution process channel 331a is low; one end of the second dilution carrier gas channel 330b is connected to the dilution carrier gas source, and the second dilution process channel 331a is connected to the process gas supply pipeline 107a. The other end of the carrier gas channel 330b is connected to the process gas supply pipeline 107b; one end of the second dilution process channel 331b is connected to the process gas supply pipeline 107b, and the carrier gas in the second dilution carrier gas channel 330b is used to dilute the process gas in the process gas supply pipeline 107b, so that the concentration of the process gas in the second dilution process channel 331b is lower. The first dilution process channel 331a and the second dilution process channel 331b merge and enter the reaction chamber 100 to meet the low concentration requirement of the process gas in the reaction chamber 100.

[0085] FIG10 is a schematic structural diagram of another semiconductor processing device according to the present invention.

[0086] The embodiment shown in FIG10 is similar to the embodiment shown in FIG9 , except that the first dilution carrier gas pipeline 430 a , the second dilution carrier gas pipeline 430 b , the carrier gas supply pipeline 104 a and the carrier gas supply pipeline 104 b use different carrier gas sources.

[0087] The first dilution carrier gas line 430a is used to dilute the process gas in the process gas supply line 107a. The diluted process gas enters the reaction chamber 100 through the dilution process line 431a. The second dilution carrier gas line 430b is used to dilute the process gas in the process gas supply line 107b. The diluted process gas enters the reaction chamber 100 through the dilution process line 431b. The dilution process lines 431a and 431b respectively enter different inlets of the showerhead 101. The diluted process gas is transported into the reaction chamber 100 to form a thin film on the surface of the substrate on the susceptor 102.

[0088] Correspondingly, the present invention also provides a working method of a semiconductor processing device. Please refer to Figure 11, step S1: provide the above-mentioned semiconductor processing device; step S2: open the first control valve to empty the gas in the carrier gas supply pipeline; open the second control valve to empty the gas in the process gas supply pipeline.

[0089] The first exhaust pipe includes a first end and a second end, the first end is connected to the carrier gas supply pipe, and the second end is connected to the purge inlet pipe; a first pneumatic valve is also arranged in sequence between the carrier gas source and the first end along the flow direction of the carrier gas; the second exhaust pipe includes a third end and a fourth end, the third end is connected to the process gas supply pipe, and the fourth end is connected to the purge outlet pipe; a second pneumatic valve is also arranged between the third end and the reaction chamber along the flow direction of the process gas; the working method of the semiconductor processing device also includes: when process treatment is carried out in the reaction chamber, closing the first control valve and the second control valve, opening the first pneumatic valve and the second pneumatic valve, so that the carrier gas enters the evaporation source device through the carrier gas supply pipe to form saturated evaporation source steam and carrier gas, that is, forming process gas, and the process gas is transported to the reaction chamber through the process gas supply pipe to form a thin film on the surface of the substrate.

[0090] A first replacement valve is also provided between the first end and the inlet; a second replacement valve is also provided between the third end and the outlet. When the evaporation source device is finished or needs to be replaced for other reasons, the first control valve, the second control valve, the first pneumatic valve, and the second pneumatic valve are closed, and the evaporation source device is disassembled through the first replacement valve and the second replacement valve. During the disassembly of the evaporation source device, air is easily introduced into the carrier gas supply pipeline and the process gas pipeline. If the air in the carrier gas supply pipeline is not cleaned before the next process, the air in the carrier gas supply pipeline will subsequently enter the evaporation source device along with the carrier gas and come into contact with the evaporation source gas. This air may explode or react with the evaporation source gas. The air in the process gas supply pipeline will also enter the reaction chamber along with the process gas, adversely affecting the process environment within the reaction chamber. To avoid these adverse effects, the first control valve on the first exhaust pipeline can be opened to facilitate exhausting the gas in the carrier gas supply pipeline, and the second control valve on the second exhaust pipeline can be opened to facilitate exhausting the gas in the process gas supply pipeline. This helps prevent the residual unwanted gas in the carrier gas supply pipeline and the process gas supply pipeline from adversely affecting subsequent processes.

[0091] It should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply the existence of any such actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article, or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or device. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of other identical elements in the process, method, article, or device comprising the element.

[0092] In the description of the present invention, it should be understood that terms such as "center," "height," "thickness," "upper," "lower," "vertical," "horizontal," "top," "bottom," "inner," "outer," "axial," "radial," and "circumferential" indicate positions or location relationships based on the positions or location relationships shown in the accompanying drawings. These terms are used solely to facilitate and simplify the description of the present invention and are not intended to indicate or imply that the devices or components referred to must have, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limitations on the present invention. In the description of the present invention, unless otherwise specified, "plurality" means two or more.

[0093] In the description of the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," "connect," and "fixed" should be understood broadly. For example, they may refer to fixed or detachable connections, or integration; mechanical or electrical connections; direct or indirect connections through an intermediary; and internal communication between two components or interaction between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on the specific circumstances.

[0094] In the present invention, unless otherwise expressly specified or limited, "above" or "below" a first feature on a second feature may include the first and second features being in direct contact, or the first and second features being in contact not directly but through another feature between them. Furthermore, "above," "above," and "above" a first feature on a second feature may include the first feature being directly above or diagonally above the second feature, or simply indicate that the first feature is at a higher level than the second feature. "Below," "below," and "below" a first feature on a second feature may include the first feature being directly below or diagonally below the second feature, or simply indicate that the first feature is at a lower level than the second feature.

[0095] Although the present invention has been described in detail through the above preferred embodiments, it should be understood that the above description is not intended to limit the present invention. After reading the above description, various modifications and substitutions of the present invention will become apparent to those skilled in the art. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A gas delivery device for delivering process gas into a reaction chamber of a semiconductor processing device, characterized in that: include: An evaporation source device, comprising an inlet and an outlet, wherein the evaporation source is contained; A carrier gas supply pipeline, one end of which is connected to the carrier gas source and the other end of which is connected to the inlet, and the carrier gas carries the saturated evaporation source gas to form a process gas after entering the evaporation source device; a process gas supply pipeline, one end of which is connected to the outlet and the other end of which is connected to the reaction chamber; a purge gas pipeline, comprising a purge inlet pipeline and a purge outlet pipeline, wherein the purge inlet pipeline is connected to the carrier gas supply pipeline through a first exhaust pipeline, and the purge outlet pipeline is connected to the process gas supply pipeline through a second exhaust pipeline; A first control valve is arranged on the first exhaust pipe; A second control valve is arranged on the second exhaust pipe.

2. The gas transmission device according to claim 1, characterized in that: The first exhaust pipe includes a first end and a second end, the first end is connected to the carrier gas supply pipe, and the second end is connected to the purge inlet pipe; a flow controller and a first pneumatic valve are also arranged in sequence between the carrier gas source and the first end along the flow direction of the carrier gas.

3. The gas transmission device according to claim 2, characterized in that: The second exhaust pipe includes a third end and a fourth end, the third end is connected to the process gas supply pipe, and the fourth end is connected to the purge outlet pipe; a second pneumatic valve and a pressure controller are also arranged between the third end and the reaction chamber along the flow direction of the process gas.

4. The gas transmission device according to claim 3, characterized in that: A gas pipeline is also arranged between the upstream of the first pneumatic valve and the downstream of the second pneumatic valve, and a third pneumatic valve is also arranged on the gas pipeline.

5. The gas transmission device according to claim 3, characterized in that: A first replacement valve is also arranged between the first end and the inlet; a second replacement valve is also arranged between the third end and the outlet.

6. The gas transmission device according to claim 3, characterized in that: The evaporation source device includes a first evaporation source device and a second evaporation source device, the first evaporation source device includes a first inlet and a first outlet, the second evaporation source device includes a second inlet and a second outlet, the carrier gas supply pipeline is connected to the first inlet, the first outlet and the second inlet are connected through a series channel, a first replacement valve is further arranged between the first end and the first inlet, a second replacement valve and a third replacement valve are arranged on the series channel, a fourth replacement valve is further arranged between the third end and the second outlet, the first replacement valve and the second replacement valve are used to replace the first evaporation source device, and the third replacement valve and the fourth replacement valve are used to replace the second evaporation source device.

7. The gas transmission device according to claim 6, characterized in that: Also includes: A switching channel includes two opposite ends, one end of the switching channel is connected to the carrier gas supply pipeline between the first end and the first switching valve, and the other end of the switching channel is connected to the series channel between the second switching valve and the third switching valve; a switching valve is provided on the switching channel.

8. The gas transmission device according to claim 7, characterized in that: Also includes: A third evaporation source device, wherein the first evaporation source device is connected in series with the second evaporation source device and then connected in parallel with the third evaporation source device.

9. The gas transmission device according to claim 8, characterized in that: The purge gas pipeline includes a first purge gas pipeline and a second purge gas pipeline, the first purge gas pipeline includes a first purge inlet pipeline and a first purge outlet pipeline, the first purge inlet pipeline is connected to the first exhaust pipeline, the first purge outlet pipeline is connected to the second exhaust pipeline, the first purge gas pipeline, the first exhaust pipeline and the second exhaust pipeline are used to exhaust the air in the pipelines of the first evaporation source device and the second evaporation source device; the second purge gas pipeline includes a second purge inlet pipeline and a second purge outlet pipeline, the second purge inlet pipeline is connected to the carrier gas supply pipeline through a third exhaust pipeline, and the second purge outlet pipeline is connected to the process gas supply pipeline through a fourth exhaust pipeline.

10. The gas transmission device according to claim 9, characterized in that: The first purge outlet pipeline is in communication with the second purge inlet pipeline; the semiconductor processing device further includes: a vacuum pump, and the second purge outlet pipeline is in communication with the vacuum pump.

11. The gas transmission device according to claim 10, characterized in that: The carrier gas sources of the first evaporation source device and the second evaporation source device are independent of the carrier gas source of the third evaporation source device; the process gas supply pipelines of the first evaporation source device and the second evaporation source device and the process gas supply pipeline of the third evaporation source device are respectively connected to different inlets of the reaction chamber.

12. The gas transmission device according to claim 10, characterized in that: The first evaporation source device, the second evaporation source device and the third evaporation source device share the same carrier gas source; the process gas supply pipelines of the first evaporation source device and the second evaporation source device are connected to the same inlet of the reaction chamber after merging with the process gas supply pipeline of the third evaporation source device.

13. The gas transmission device according to claim 1 or 6, characterized in that: Also includes: A dilution carrier gas channel, one end of which is connected to a dilution carrier gas source, and the other end of which is connected to a process gas supply pipeline, for diluting the process gas output from the evaporation source device to form a dilution process gas; A dilution process channel has one end connected to the process gas supply pipeline and the other end connected to the reaction chamber.

14. The gas transmission device according to claim 10, characterized in that: The process gas supply pipelines of the first evaporation source device and the second evaporation source device are first process gas supply pipelines, and the process gas supply pipeline of the third evaporation source device is second process gas supply pipeline; it also includes: a first dilution carrier gas channel and a second dilution carrier gas channel, one end of the first dilution carrier gas channel is connected to a first dilution carrier gas source, and the other end of the first dilution carrier gas channel is connected to the first process gas supply pipeline, which is used to dilute the process gas output from the first evaporation source device and the second evaporation source device to form a first dilution process gas; a first dilution process channel, one end of which is connected to the first process gas supply pipeline, and the other end is connected to the reaction chamber; one end of the second dilution carrier gas channel is connected to a second dilution carrier gas source, and the other end of the second dilution carrier gas channel is connected to the second process gas supply pipeline, which is used to dilute the process gas output from the third evaporation source device to form a second dilution process gas; a second dilution process channel, one end of which is connected to the second process gas supply pipeline, and the other end is connected to the reaction chamber.

15. The gas transmission device according to claim 14, characterized in that: The carrier gas sources of the first evaporation source device and the second evaporation source device, the carrier gas source of the third evaporation source device, the first dilution carrier gas source and the second dilution carrier gas source are independent of each other; the first dilution process gas supply pipeline and the second dilution process gas supply pipeline are respectively connected to different inlets of the reaction chamber.

16. The gas transmission device according to claim 14, characterized in that: The carrier gas sources of the first evaporation source device and the second evaporation source device, the carrier gas source of the third evaporation source device, the first dilution carrier gas source and the second dilution carrier gas source share the same carrier gas source; the first dilution process gas supply pipeline and the second dilution process gas supply pipeline are connected to the same inlet of the reaction chamber after merging.

17. A semiconductor processing device, characterized in that: include: Reaction chamber; A base, located at the bottom of the reaction chamber, for carrying a substrate; A sprinkler head, arranged opposite to the base; The gas transmission device according to any one of claims 1 to 16 is connected to the shower head and is used to transport process gas into the reaction chamber.

18. A method for operating a semiconductor processing device, characterized in that: include: Providing a semiconductor processing device as claimed in claim 17; The first control valve is opened to evacuate the gas in the carrier gas supply pipeline; the second control valve is opened to evacuate the gas in the process gas supply pipeline.

19. The operating method of a semiconductor processing device according to claim 18, wherein: The first exhaust pipe includes a first end and a second end, the first end is connected to the carrier gas supply pipe, and the second end is connected to the purge inlet pipe; a first pneumatic valve is sequentially arranged between the carrier gas source and the first end along the flow direction of the carrier gas; the second exhaust pipe includes a third end and a fourth end, the third end is connected to the process gas supply pipe, and the fourth end is connected to the purge outlet pipe; a second pneumatic valve is also arranged between the third end and the reaction chamber along the flow direction of the process gas; the working method of the semiconductor processing device also includes: when process treatment is carried out in the reaction chamber, the first control valve and the second control valve are closed, and the first pneumatic valve and the second pneumatic valve are opened.

20. The operating method of a semiconductor processing device according to claim 19, wherein: A first replacement valve is also arranged between the first end and the inlet; a second replacement valve is also arranged between the third end and the outlet; before opening the first control valve and the second control valve, the method further includes: closing the first control valve, the second control valve, the first pneumatic valve and the second pneumatic valve, and disassembling the evaporation source device through the first replacement valve and the second replacement valve.

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