Power semiconductor module

Abstract

A power semiconductor module (100), comprising a top plate (10), which has a first main surface (11) and a second main surface (12) opposite the first main surface (11) along a stacking direction (S1), and a bottom plate (20), which has a third main surface (21) and a fourth main surface (22) opposite the third main surface (21) along the stacking direction (S1). The power semiconductor module (100) further comprises a frame structure (30), which surrounds a power semiconductor device (99) in a first plane (P1) that extends along a first lateral direction (L1) and a second lateral direction (L2). The frame structure (30) comprises a first frame part (40) with a first height (41), arranged between the top plate (10) and the bottom plate (20) along the stacking direction (S1), wherein the first frame part (40) comprises a structured body (45) adapted to control the propagation of ionized gas or plasma from the power semiconductor device (99) during a failure. The frame structure (30) further comprises a second frame part (50) with a second height (51), at least partially arranged between the top plate (10) and the bottom plate (20) along the stacking direction (S1), wherein the second frame part (50) circumferentially surrounds the first frame part (40) in the first plane (P1) that extends along the first lateral direction (L1) and the second lateral direction (L2) and is configured to prevent leakage from the inside of the power semiconductor module (100).

Description

[0001] P2023,1370 WO E / P230132WO01 December 20, 2023 - 1 - Description Power semiconductor module The present disclosure relates to a power semiconductor module and a method for mounting the power semiconductor module. The design of power semiconductor devices, like presspack type power modules and their specific encapsulation, make these devices explosion-proof, which is an important feature of this product group. The module housing secures the surroundings of the power semiconductor device in an application from gas and plasma release and from ejecting parts in the case of an explosion e.g. due to a power semiconductor device fail like an electric short. In recent power semiconductor devices, the explosion-proofness is realized by the material and the design of the module housing, which consists of one single frame, typically made of fiber-reinforced resin material. The development of power semiconductor devices towards higher current ratings of 5 kA and more and / or towards higher voltage ratings, results in higher power losses and higher explosion energy in the case of a device fail or failure. The recent housing setup is no more capable for such high explosion energies and pressures. There is a need for a housing setup for power semiconductor devices, which is suitable for such higher explosion energies. It is an object to provide a power semiconductor module, which enhances the explosion-proofness of a semiconductor device while maintaining simple design and ease of mounting the power semiconductor module. P2023,1370 WO E / P230132WO01 December 20, 2023 - 2 - This object is solved by the features of the independent claims. Advantageous embodiments are indicated in the dependent claims. Embodiments of the disclosure, for instance as claimed in the independent claims, address the above shortcomings in the art in whole or in part. Further embodiments of the power semiconductor module and of the method for mounting the power semiconductor module are subject matter of the further claims. There is provided a power semiconductor module, comprising a top plate, which has a first main surface and a second main surface opposite the first main surface along a stacking direction, and a bottom plate, which has a third main surface and a fourth main surface opposite the third main surface along the stacking direction. The power semiconductor module further comprises a frame structure, which circumferentially surrounds a power semiconductor device in a first plane that extends along a first lateral direction and a second lateral direction. The frame structure comprises a first frame part with a first height, arranged between the top plate and the bottom plate along the stacking direction. The first frame part comprises a structured body to control the propagation of ionized gas or plasma from the power semiconductor device during a failure. The frame structure further comprises a second frame part with a second height, at least partially arranged between the top plate and the bottom plate along the stacking direction. The second frame part circumferentially surrounds the first frame part in the first plane that extends along the first lateral direction and the second P2023,1370 WO E / P230132WO01 December 20, 2023 - 3 - lateral direction and is configured to prevent leakage from the inside of the power semiconductor module. The first, second, third and fourth main surfaces each have a greater extension than the side surfaces of the top plate and the bottom plate that are aligned transversely to them. The top plate extends over an area and has a significantly greater extension along the first and second main surfaces than transversely thereto. The top plate extends substantially in the first plane. The bottom plate extends over an area and has a significantly greater extension along the third and fourth main surfaces than transversely thereto. The bottom plate extends substantially in the first plane. The top plate and the bottom plate are arranged according to the stacking direction in such a way that the third main surface and the second main surface are facing each another and are facing the inside of the power semiconductor module. The stacking direction is perpendicular to the first plane defined by the first and second lateral directions. The stacking direction is only an example of a possible orientation of the power semiconductor module and its parts. The power semiconductor module and its components, like the first frame part, the second frame part, the top plate, the bottom plate, the power semiconductor device, and other components can be stacked in any order. The used stacking direction does not limit the stacking sequence. The components of the power semiconductor module can also be arranged in a reverse order with respect to the stacking direction. The power semiconductor module comprises a modified frame structure for power semiconductor devices of higher current and / or voltage rating, which is capable to provide explosion- P2023,1370 WO E / P230132WO01 December 20, 2023 - 4 - proofness even for higher explosion energies and pressures. The power semiconductor module comprises two frame parts. The first frame part with a first height is arranged along the stacking direction between the top plate and the bottom plate. The first frame part extends substantially in the first plane that extends along the first lateral direction and the second lateral direction. The first frame part has the geometrical outline like the power semiconductor device, for example an insulated-gate bipolar transistor (IGBT). The power semiconductor device is not limited to IGBTs and may be also a PiN Diode, a Power MOSFET, a HEMT, and / or a Thyristor, made of or comprising silicon, silicon carbide or gallium nitride. The power semiconductor device can also comprise other structures, like a terminal structure and / or a substrate and / or baseplate, or a submodule incorporating chips and other structures as listed above. The power semiconductor device is not limited to just a chip or a sole device. The first frame part circumferentially surrounds the power semiconductor device in the first plane, when viewed from above. In this context, from above means the direction from the top plate to the bottom plate along the stacking direction. The first plane extends along the first lateral direction and the second lateral direction. The first plane is essentially arranged parallel to the first main surface. The first frame part is designed in a way to allow plasma and explosion gases being spread and damped in a controlled way. The first frame part comprises a structured body to control the propagation of ionized gas from the semiconductor device. The structured body is adapted as a structure of one or more hollow portions and / or one or more thin walls for a controlled outlet channel. The first frame part is circumferentially surrounded by the second frame part in the P2023,1370 WO E / P230132WO01 December 20, 2023 - 5 - first plane. The second frame part can directly adhere to the first frame part in lateral direction with small mounting tolerances. The second frame part with a second height is at least partially arranged along the stacking direction between the top plate and the bottom plate. The second frame part extends substantially in the first plane that extends along the first lateral direction and the second lateral direction. The second frame part is highly pressure-resistant, such that mechanical integrity can be even kept in the case of an explosion and is configured to prevent leakage from the inside of the power semiconductor module and prevents damage to the surroundings from flying parts in case of a device fail, causing for example an explosion of the power semiconductor device. The second frame part is also designed for providing more space and for the reception of gases accompanied by reduction of explosion pressure in case of device fail or a failure. According to a further embodiment the second frame part comprises at least one recess along the circumferential area facing the first frame part, wherein the first frame part encloses in cooperation with the at least one recess of the second frame a hollow space. The second frame part comprises one or more recesses, which form one or more hollow spaces in cooperation with the first frame part for reception of explosion gases and pressure reduction. In case of a failure, like an overcurrent condition or an electrical short of the power semiconductor device or associated components, plasma and explosion gases are kept in the hollow space inside the second outer frame P2023,1370 WO E / P230132WO01 December 20, 2023 - 6 - and are distributed in a larger volume, such that the overpressure is reduced. Also moving parts are prevented from getting outside of the second frame part and to fly around and damage the surroundings. The at least one recess may be realized along the complete circumference of the second frame part and provides a volume, where plasma and gases generated by the explosion may escape from the power semiconductor module interior by a controlled release, facilitated by the design of the first inner frame. This additional volume for plasma and gases provides a significant reduction of the explosion pressure, such that an explosion proofness of the power semiconductor module is provided. According to a further embodiment the at least one recess has a blunt and / or a round and / or a pointed conical cross- section. The at least one recess has for example a blunt and / or a round and / or a pointed conical cross-section when viewed from a side in the direction along the first lateral direction or the second lateral direction. The shape of the recess is not limited to these geometries and can have any shape if it fits the purpose of increasing the hollow space while maintaining the structural integrity of the frame structure. According to a further embodiment the structured body of the first frame part comprises defined outlet channels. According to a further embodiment the structured body of the first frame part comprises defined breaking parts. P2023,1370 WO E / P230132WO01 December 20, 2023 - 7 - According to a further embodiment the defined breaking parts comprise thin walls and / or hollow portions. This first frame part comprises defined outlet channels and / or breaking parts to release or at least reduce overpressure inside the power module. There are several design options possible to provide a controlled reduction of pressure in the case of an explosion. On one hand, grooves, holes and / or channels may be introduced into to first frame part spread over for example the complete surroundings of the first frame part to connect the inside of the power semiconductor module with the power semiconductor device therein and the second frame part, especially with recesses of the second frame part. Furthermore, the grooves, holes and / or channels of the first frame part allow a controlled release of plasma or gases, like ionized gas. On the other hand, the first frame part may provide a first sealing, but breaking parts, like hollow portions and / or thin mechanically weak walls or other structures allowing a controlled breaking, are incorporated into the first frame part. In case of a failure for example of the semiconductor device, the breaking parts provide a controlled breaking due to the explosion pressure, such that plasma and gas can flow into the larger hollow space. Thus, the structured body allows a controlled reduction of the internal pressure in the case of an explosion, such that plasma and gases have space for expansion. The hollow portions may also be used as further outlet channels to further improve the release of plasma or gases. According to a further embodiment the first frame part comprises a first rib along the circumferential area facing the second frame part. P2023,1370 WO E / P230132WO01 December 20, 2023 - 8 - According to a further embodiment the second frame part comprises a second rib along the circumferential area facing away from the first frame part. The first frame part comprises at least one first rib along the circumferential area facing the second frame part to enhance the creepage distance between an electrical contact on a top side, like the second main surface, and on a bottom side, like the third main surface. The first rib has also the advantage to increase the volume of the hollow space. The second frame part comprises a second rib along the circumferential area facing away from the first frame part to enhance the creepage distance between an electrical contact arranged on a top side, like the second main surface, and on a bottom side, like the third main surface. According to a further embodiment the second frame part comprises a first groove arranged adjacent to the top plate for fitting a first sealing element and / or a second groove arranged adjacent to the bottom plate for fitting a second sealing element. The power semiconductor module can be mechanically clamped between for example coolers in an application, such that pressure is applied from the top and bottom side on the power semiconductor module. Consequently, a sealing of the power semiconductor module having the proposed setup is easily realized by mechanically stable and solid bottom and top plates, which are arranged on the upper surface and on the lower surfaces of the frame structure, especially of the second frame part. These plates are pressed on the top and bottom surfaces of the second frame part. A sufficient P2023,1370 WO E / P230132WO01 December 20, 2023 - 9 - leakage tightness against plasma and / or gases is provided by the arrangement of first and / or second sealing elements between the second frame part and the top plate respectively between the second frame part and the bottom plate. The sealing elements may be e.g. realized by elastic sealing rings, which are arranged in the first and / or second groove. The sealing elements are arranged between the top plate and the second frame part along the stacking direction respectively arranged between the bottom plate and the second frame part along the stacking direction. According to a further embodiment the first height is smaller than the second height. According to a further embodiment the second frame part comprises an upper section facing the second main surface and a lower section facing the third main surface. The upper section can also be an upper part and faces the second main surface. The lower section can also be a lower part and faces the third main surface. Both sections are joined together. For this purpose, corresponding structures fitting to each other may be available at the interface between the upper section and the lower section. Any form- fitting in which both parts interlock, are possible. For example, tongue and groove, dovetail joints or similar connections. The at least one recess can be arranged in the upper section or in the lower section. Alternatively, the at least one recess is arranged in the upper section and in the lower section. According to a further embodiment the first frame part and the second frame part are designed as an integral part. P2023,1370 WO E / P230132WO01 December 20, 2023 - 10 - It is also possible to realize a frame structure, which comprises an integral part having a first frame part with defined channels and / or breaking parts, like hollow portions, thin walls or other structures facilitating a controlled breaking, which undergo a controlled breaking in the case of an explosion. The integral part further comprises the second frame part with at least one surrounding recess, forming a hollow space, where plasma or gas can escape. This integral part is a sole part and is for example printed by a 3D- printer or is produced by injection molding. According to a further embodiment the first frame part and / or the second frame part comprise or are made of fiber- reinforced resin material. There is also provided a method for mounting a power semiconductor module. The method comprises the steps of providing a power semiconductor device, arranging the power semiconductor device inside a frame structure with a structured body adapted to control the propagation of ionized gas or plasma from the power semiconductor device during a failure. The method further comprises the step of, arranging a top plate on a top surface of a second frame part and arranging a bottom plate on a bottom surface of the second frame part. According to a further embodiment arranging the power semiconductor device inside the frame structure, comprises the steps of arranging the power semiconductor device inside a first frame part with a structured body adapted to control the propagation of ionized gas or plasma, and arranging the first frame part with the power semiconductor device inside P2023,1370 WO E / P230132WO01 December 20, 2023 - 11 - the second frame part having at least one recess, which forms one or more hollow spaces in cooperation with the first frame part for reception of explosion gases and pressure reduction. The power semiconductor device can also comprise other structures, like a terminal structure and / or a substrate and / or a baseplate, or a submodule incorporating chips and other structures as listed above. While arranging the power semiconductor device inside the frame structure, these other structures mentioned above can also be arranged inside the frame structure. According to a further embodiment the second frame part is assembled before arranging the first frame part with the power semiconductor device inside the second frame part. Assembling the second frame part comprises arranging the upper section of the second frame part on top of the lower section of the second frame part. The present disclosure comprises several aspects of a power semiconductor module and of a method for mounting the power semiconductor module on the basis of their embodiments and examples. Every feature described with respect to one of the aspects is also disclosed herein with respect to the other aspect, even if the respective feature is not explicitly mentioned in the context of the specific aspect. For example, the method described in this disclosure is directed to a method for mounting the power semiconductor module. Thus, features and advantages described in connection with the power semiconductor module can be used for the method, and vice versa. P2023,1370 WO E / P230132WO01 December 20, 2023 - 12 - While the disclosure is amenable to various modifications and alternative forms, specifics thereof are shown by way of example in the figures and will be described in detail. It should be understood, however, that the intention is not to limit the disclosure to the particular described embodiments and examples. On the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the scope of the disclosure defined by the appended claims. The accompanying figures are included to provide a further understanding. In the figures, elements of the same structure and / or functionality may be referenced by the same reference signs. It is to be understood that the embodiments shown in the figures are illustrative representations and are not necessarily drawn to scale. Figure 1 is a perspective view of a power semiconductor module, Figure 2 is a perspective view of the power semiconductor module, Figure 3 is a perspective view of the power semiconductor module, Figure 4 is a perspective view of the power semiconductor module, Figure 5 is a cross-sectional view of the frame structure, Figure 6 is a cross-sectional view of the frame structure. Figure 1 shows a perspective view of a power semiconductor module 100. The power semiconductor module 100 comprises first a top plate 10 along a stacking direction S1. The top plate 10 has a first main surface 11 and a second main P2023,1370 WO E / P230132WO01 December 20, 2023 - 13 - surface 12. The first main surface 11 faces outwards in an operating state of the power semiconductor module 100. The second main surface 12 faces the interior of the power semiconductor module 100 in the operating state. In particular, the second main surface 12 is arranged opposite the first main surface 11 along the stacking direction S1. The power semiconductor module 100 comprises a bottom plate 20. The bottom plate 20 has a third main surface 21 and a fourth main surface 22. The third main surface 21 faces the top plate 10. The fourth main surface 22 is arranged opposite the third main surface 21 along the stacking direction S1. The top plate 10 and the bottom plate 20 are arranged along the stacking direction S1 in such a way that the third main surface 21 and the second main surface 12 are facing each other and the inside of the power semiconductor module 100. The four main surfaces 11, 12, 21, 22 are arranged in the same direction and at a distance from one another. The four main surfaces 11, 12, 21, 22 are arranged parallel to one another, in particular within the usual tolerances. The power semiconductor module 100 comprises a frame structure 30, which surrounds a power semiconductor device 99 laterally. The power semiconductor device 99 is arranged along the stacking direction S1 between the top plate 10 and the bottom plate 20. The power semiconductor device 99 is for example an insulated-gate bipolar transistor (IGBT). The frame structure 30 comprises a first frame part 40 with a first height 41 and a second frame part 50 with a second height 51. The first height 41 and the second height 51 essentially extend parallel to the stacking direction S1. The first height 41 is smaller than the second height 51. P2023,1370 WO E / P230132WO01 December 20, 2023 - 14 - The first frame part 40 is arranged along the stacking direction S1 between the top plate 10 and the bottom plate 20. The first frame part 40 comprises a structured body 45 to control the propagation of ionized gas. The structured body 45 is designed in a way to allow plasma and explosion gases being spread and damped in a controlled way. Thus, the first frame part 40 influences the explosion propagation to improve the explosion-proofness. The second frame part 50 is at least partially arranged along the stacking direction S1 between the top plate 10 and the bottom plate 20. The second frame part 50 circumferentially surrounds the first frame part 40 in a first plane P1 when viewed from above. In this case, from above means from the top plate 10 to the bottom plate 20 along the stacking direction S1. The first plane P1 extends along a first lateral direction L1 and a second lateral direction L2. The first plane P1 is essentially arranged parallel to the first main surface 11. The first frame part 40 circumferentially surrounds the power semiconductor device 99 in the first plane P1. The second frame part 50 is configured to prevent leakage from the inside of the power semiconductor module 100 to the outside. In this case, inside the power semiconductor module 100 is defined as the space which is surrounded by the side surfaces of the second frame part 50 facing the first frame part 40, the second main 12 surface and the third main surface 21. In this context, outside the power semiconductor module 100 is defined as the space, which is faced by the first main surface 11, the fourth main surface 22 and the side surfaces of the second frame part 50 facing away from the first frame part 40. P2023,1370 WO E / P230132WO01 December 20, 2023 - 15 - The second frame part 50 comprises a first groove 581 arranged adjacent to the top plate 10 for fitting a first sealing element 601. Alternatively, or additionally, the second frame 50 comprises a second groove 582 arranged adjacent to the bottom plate 20 for fitting a second sealing element 602. The top plate 10 and the bottom plate 20 are pressed on a top surface 53 of the second frame part 50 respectively on a bottom surface 54 of the second frame part 50. A sufficient leakage tightness against plasma and / or gases is provided by the arrangement of the first sealing element 601 and by the second sealing element 602 between the second frame part 50 and the top plate 10 respectively the bottom plate 20 along the stacking direction S1. The sealing may be realized by for example elastic sealing rings, which are arranged in the first groove 581 and / or the second groove 582. The second frame part 50 comprises at least one recess 52 along the circumferential area facing the first frame part 40. The at least one recess 52 forms a hollow space in cooperation with the first frame part 40. Furthermore, the second frame parts 50 purpose is to provide more space and to receive the explosion gases, such that the pressure of the explosion gases is reduced. The second frame part 50 is highly pressure resistant, such that plasma and explosion gases are kept in the hollow space inside the second frame part 50 and are distributed in a larger volume, such that the overpressure is reduced. Thus, the second frame part 50 influences the explosion propagation to improve the explosion-proofness. Also moving parts are prevented from getting outside of the second frame part 50 and to fly around and damage the surrounding, humans and other devices. P2023,1370 WO E / P230132WO01 December 20, 2023 - 16 - The second frame part 50 is not limited to just one recess 52 and may comprise more recesses 52. For example, two or more recesses 52, which are arranged along the stacking direction S1 on top of each other. The at least one recess 52 has for example a blunt and / or a round and / or a pointed conical cross-section when viewed from along the first lateral direction L1 or from the second lateral direction L2. The shape of the recess 52 is not limited to these geometries and can have any shape if it fits the purpose of increasing the hollow space while maintaining the structural integrity of the frame structure 30. The first frame part 40 comprises at least one first rib 42 along the circumferential area facing the second frame part 50 to enhance the creepage distance between an electrical contact on the first main surface 11 and on the fourth main surface 22. The first rib 42 has also the advantage to increase the volume of the hollow space. The second frame part 50 comprises a second rib 59 along the circumferential area facing away from the first frame part 40 to enhance the creepage distance between an electrical contact arranged on the first main surface 11 and on the fourth main surface 22. In Figure 1 the first frame part 40 and the second frame part 50 are designed as two distinct parts. The first frame part 40 and / or the second frame part 50 for example comprise or are made of fiber-reinforced resin material. Alternatively, the first frame part 40 and the second frame part 50 are made as one piece, like an integral part. For example, the first frame part 40 and the second frame part 50 are printed by a 3D-printer or are produced by injection molding or other types of molding processes. P2023,1370 WO E / P230132WO01 December 20, 2023 - 17 - Figure 2 shows a perspective view of the power semiconductor module 100. The power semiconductor module 100 is the same as shown in Figure 1 with the difference that the second frame part 50 comprises an upper section 56 and a lower section 57. Both sections 56, 57 are joined together. For this purpose, corresponding structures fitting to each other may be available at the interface between the upper section 56 and the lower section 57. The upper section 56 and lower section 57 are described in more detail in Fig. 6. The upper section 56 faces the second main surface 12 and the lower section faces the third main surface 21. The at least one recess 52 can be arranged in the upper section 56 or in the lower section 57. Alternatively, the at least one recess 52 is arranged partly in the upper section 56 and partly in the lower section 57. Figure 3 shows a perspective view of the power semiconductor module 100 from above. The power semiconductor module 100 is basically the same as shown in Figure 1 or 2. Therefore a detailed description is omitted. The power semiconductor device 99 is surrounded by the frame structure 30. The power semiconductor device 99 can also comprise other structures, like a terminal structure and / or a substrate and / or a baseplate, or a submodule incorporating chips and other structures as listed above. While arranging the power semiconductor device inside the frame structure 30, these other structures mentioned above can also be arranged inside the frame structure 30. In particular the power semiconductor device 99 is circumferentially surrounded by the first frame part 40 in the first plane P1, which extends along the first lateral direction L1 and the second lateral direction L2. The first frame part 40 is circumferentially surrounded by the P2023,1370 WO E / P230132WO01 December 20, 2023 - 18 - second frame part 50 in the first plane P1. The structured body 45 of the first frame part 40 comprises defined outlet channels 46. The channels 46 are for example spread over the complete circumference of the first frame part 40. The channels 46 extend from the power semiconductor device 99 to the second frame part 50, especially to the one or more recess 52. The channels 46 may alternatively be confined to just one side of the first frame part 40 or even to just one part of the first frame part 40. The channels 46 are adapted to release or at least reduce overpressure inside the power semiconductor module 100, especially inside the power semiconductor device 99. The channels 46 are designed in a way to allow plasma and explosion gases being spread and damped in a controlled way, such that gases and / or plasma can get into the at least one recess 52 of the second frame part 50. This allows a controlled reduction of the internal pressure in the case of an explosion, such that plasma and gases have space for expansion. Figure 4 shows a perspective view of the power semiconductor module 100 from above. The power semiconductor module 100 is basically the same as shown in Figure 3. Therefore, a detailed description is omitted. The power semiconductor device 99 is surrounded by the frame structure 30. In particular the power semiconductor device 99 is circumferentially surrounded by the first frame part 40 in the first plane P1, which extends along the first lateral direction L1 and the second lateral direction L2. The first frame part 40 is circumferentially surrounded by the second frame part 50 in the first plane P1. The structured body 45 of the first frame part 40 comprises breaking parts 47. The first frame part 40 provides a first sealing. Additionally hollow portions and / or thin mechanically weak breaking pats P2023,1370 WO E / P230132WO01 December 20, 2023 - 19 - 47, like thin walls, are incorporated into the first frame part 40, which provide a controlled breaking due to the explosion pressure, such that plasma and gas can flow into the larger hollow space provided by the second frame part 50. The breaking parts 47 also allow a controlled reduction of the internal pressure in the case of an explosion, such that plasma and gases have space for expansion into the at least one recess 52 of the second frame part 50. This setup has the advantage, that the power semiconductor device 99 has a closed housing, which is provided by the first frame part 40, during normal operation. Figure 5 shows a cross-sectional view of the frame structure 30 of the power semiconductor module 100. In Figure 5 different four shapes of the at least one recess 52 of the second frame part 50 are shown. The second frame part 50 is adjacent to the first frame part 40. The second frame part 50 comprises one, two or three recesses 52. The number of recesses 52 is not limited to three recesses and may comprise more than three recesses 52. The at least one recess 52 has a blunt shape and / or a round shape and / or a pointed conical shape, when viewed from the first lateral direction L1 or from the second lateral direction L2. Thus, the cross-section of the at least one recess 52 may have any suitable shape. Figure 6 shows a cross-sectional view of the frame structure 30 of the power semiconductor module 100. In Figure 6 the second frame part 50 comprises the upper section 56 and the lower section 57. The upper section 56 faces the second main surface 12. The lower section 57 faces the third main surface 21. Both sections 56, 57 are joined together. For this purpose, corresponding structures fitting to each other may be available at the interface between the upper section 56 P2023,1370 WO E / P230132WO01 December 20, 2023 - 20 - and the lower section 57. Any form-fitting in which both parts interlock, are possible. For example, tongue and groove, dovetail joints or similar connections. The at least one recess 52 is arranged in the upper section 56 and in the lower section 57. Alternatively, the at least one recess 52 is arranged in the upper section 56 or in the lower section 57. The embodiments shown in the Figures 1 to 6 as stated represent exemplary embodiments of the power semiconductor module 100. Therefore, they do not constitute a complete list of all embodiments according to the power semiconductor module 100 and the method for mounting the power semiconductor module 100. Actual arrangements of the power semiconductor module 100 and methods for mounting the power semiconductor module 100 may vary from the embodiments described above.

[0002] P2023,1370 WO E / P230132WO01 December 20, 2023 - 21 - Reference Signs 100 power semiconductor module 10 top plate 11 first main surface 12 second main surface 20 bottom plate 21 third main surface 22 fourth main surface 30 frame structure 40 first frame part 41 first height 42 first rib 45 structured body 46 channel 47 breaking part 50 second frame part 51 second height 52 recess 53 top surface 54 bottom surface 56 upper section 57 lower section 581 first groove 582 second groove 59 second rib 601 first sealing element 602 second sealing element 99 power semiconductor device S1 stacking direction L1 first lateral direction L2 second lateral direction P1 first plane

Claims

P2023,1370 WO E / P230132WO01 December 20, 2023 - 22 - Claims 1. A power semiconductor module (100), comprising - a top plate (10), which has a first main surface (11) and a second main surface (12) opposite the first main surface (11) along a stacking direction (S1), - a bottom plate (20), which has a third main surface (21) and a fourth main surface (22) opposite the third main surface (21) along the stacking direction (S1), - a frame structure (30), which surrounds a power semiconductor device (99) in a first plane (P1) that extends along a first lateral direction (L1) and a second lateral direction (L2), wherein the frame structure (30) comprises − a first frame part (40) with a first height (41), arranged between the top plate (10) and the bottom plate (20) along the stacking direction (S1), wherein − the first frame part (40) comprises a structured body (45) adapted to control the propagation of ionized gas or plasma from the power semiconductor device (99) during a failure, and − a second frame part (50) with a second height (51), at least partially arranged between the top plate (10) and the bottom plate (20) along the stacking direction (S1), wherein − the second frame part (50) circumferentially surrounds the first frame part (40) in the first plane (P1) that extends along the first lateral direction (L1) and the second lateral direction (L2), and − is configured to prevent leakage from the inside of the power semiconductor module (100).P2023,1370 WO E / P230132WO01 December 20, 2023 - 23 - 2. Power semiconductor module (100) according to claim 1, wherein the second frame part (50) comprises at least one recess (52) along the circumferential area facing the first frame part (40), wherein the first frame (40) in cooperation with the at least one recess (52) of the second frame part (50) encloses a hollow space for reception of explosion gases and pressure reduction.

3. Power semiconductor module (100) according to claim 2, wherein the at least one recess (52) has a blunt and / or a round and / or a pointed conical cross-section.

4. Power semiconductor module (100) according to any one of the preceding claims, wherein the structured body (45) of the first frame part (40) comprises defined outlet channels (46).

5. Power semiconductor module (100) according to any one of the preceding claims, wherein the structured body (45) of the first frame part (40) comprises defined breaking parts (47).

6. Power semiconductor module (100) according to claim 5, wherein the defined breaking parts (47) comprise thin walls and / or hollow portions.

7. Power semiconductor module (100) according to any one of the preceding claims, wherein the first frame part (40) comprises a first rib (42) along the circumferential area facing the second frame part (50).

8. Power semiconductor module (100) according to any one of the preceding claims, wherein the second frame part (50) comprises a second rib (59) along the circumferential area facing away from the first frame part (40).P2023,1370 WO E / P230132WO01 December 20, 2023 - 24 - 9. Power semiconductor module (100) according to any one of the preceding claims, wherein the second frame part (50) comprises - a first groove (581) arranged adjacent to the top plate (10) for fitting a first sealing element (601) and / or - a second groove (582) arranged adjacent to the bottom plate (20) for fitting a second sealing element (602).

10. A power semiconductor module (100) according to any one of the preceding claims, wherein the first height (41) is smaller than the second height (51).

11. Power semiconductor module (100) according to any one of the preceding claims, wherein the second frame part (50) comprises an upper section (56) facing the second main surface (12) and a lower section (57) facing the third main surface (21).

12. Power semiconductor module (100) according to any one of the claims 1 to 10, wherein the first frame part (40) and the second frame part (50) are designed as one integral part.

13. Power semiconductor module (100) according to any one of the preceding claims, wherein the first frame part (40) and / or the second frame part (50) comprise or are made of fiber-reinforced resin material.

14. Method for mounting a power semiconductor module (100), comprising the steps of - providing a power semiconductor device (99), - arranging the power semiconductor device (99) inside a frame structure (30) with a structured body (45) adaptedP2023,1370 WO E / P230132WO01 December 20, 2023 - 25 - to control the propagation of ionized gas or plasma from the power semiconductor device (99) during a failure, - arranging a top plate (10) on a top surface (53) of a second frame part (50) and - arranging a bottom plate (20) on a bottom surface (54) of the second frame part (50).

15. Method according to claim 14, wherein arranging the power semiconductor device (99) inside the frame structure (30), comprises the steps of - arranging the power semiconductor device (99) inside a first frame part (40) with a structured body (45) adapted to control the propagation of ionized gas or plasma, and - arranging the first frame part (40) with the power semiconductor device (99) inside the second frame part (50) having at least one recess (52), which form one or more hollow spaces in cooperation with the first frame part (40) for reception of explosion gases and pressure reduction.

16. Method according to claim 15, wherein the second frame part (50) is assembled before arranging the first frame part (40) with the power semiconductor device (99) inside the second frame part (50), wherein assembling the second frame part (50) comprises arranging the upper section (56) of the second frame part (50) on top of the lower section (57) of the second frame part (50).

Images