Semiconductor module with a semiconductor circuit and a housing

Abstract

The invention relates to a semiconductor module (2) having a semiconductor circuit (34) and a housing (4) which comprises a heat sink (6), wherein the housing (4) at least partially surrounds the semiconductor circuit (34), wherein the semiconductor circuit (34) has at least one substrate (36, 38), which is arranged on a planar surface (7) of the heat sink (6), semiconductor elements (46), which are contacted on the at least one substrate (36, 38). In order to specify a semiconductor module (2) which is as flexible as possible and enables high switching frequencies and power densities, it is proposed that contact electrodes (12, 16, 20, 14, 18, 22) are connected to the semiconductor circuit (34) and are each guided to the outside through a housing recess (24) in a cover face (10) of the housing (4), wherein the contact electrodes (12, 16, 20, 14, 18, 22) each have a contact portion (26) at least partially guided to the outside, a centre portion (50) and a connection portion (52) which can be connected to the substrate (36, 38), wherein the connection portion (52) of the respective contact electrode (12, 16, 20, 14, 18, 22) can be connected by translational bending of the contact portion (26) and connection portion (52) toward the respective centre portion (50), with fixed positioning to the housing recess (24), to four contact faces (54), in particular arranged in a rectangular manner, on the substrate (36, 38).

Description

[0001] Description

[0002] Semiconductor module with a semiconductor circuit and a housing

[0003] The invention relates to a semiconductor module comprising a semiconductor circuit and a housing which comprises a heat sink,

[0004] Furthermore, the invention relates to a power converter with at least one such semiconductor module.

[0005] Furthermore, the invention relates to a method for producing such a semiconductor module.

[0006] Furthermore, the invention relates to a computer program product comprising instructions which, when the program is executed by a computer, cause the computer to simulate the behavior of such a semiconductor module.

[0007] Such a semiconductor module is typically used in a power converter. A power converter can be, for example, a rectifier, an inverter, a converter, or a DC-DC converter. The semiconductor elements used in the semiconductor module include transistors and diodes. Transistors are designed, for example, as insulated-gate bipolar transistors (IGBTs) or as wide-bandgap transistors. Wide-bandgap transistors can be implemented using silicon carbide or gallium nitride technology, for example, and enable, among other things, higher switching frequencies.

[0008] The published patent application EP 4 173 039 A1 describes a power semiconductor module which has a power semiconductor circuit and a housing, wherein the housing at least partially surrounds the power semiconductor circuit, and wherein the power semiconductor circuit has a first contact electrode and a second contact electrode, which are each electrically conductively connected to the power semiconductor circuit, and which are each led outwards through the housing through a recess formed for this purpose in the housing.

[0009] The published patent application EP 4 233 165 A1 describes a power converter with at least two, in particular identical, power semiconductor modules. In order to achieve greater reliability compared to the prior art, it is proposed that the power semiconductor modules each have at least one power semiconductor and power contacts, wherein the power semiconductors are electrically connected to the power contacts of the respective power semiconductor module.

[0010] The publication WO 2023 / 147910 A1 describes an arrangement for a semiconductor arrangement with at least one passive component and a substrate, wherein the substrate has a dielectric material layer and a first metallization arranged on the dielectric material layer.

[0011] To increase the performance of a semiconductor module, several semiconductor elements are typically connected in parallel. As module sizes increase, a variety of constraints must be considered for an optimized layout, and a good compromise must be found between various optimization goals. With ever-increasing switching frequencies and power densities, the distribution of the semiconductor elements and their contacting play an increasingly important role. At the same time, as many circuit topologies and their variants as possible should be accommodated in a flexible, standardized package.

[0012] Against this background, the object of the present invention is to provide a semiconductor module that is as flexible as possible and that enables high switching frequencies and power densities. The object is achieved according to the invention by a semiconductor module comprising a semiconductor circuit and a housing that includes a heat sink, wherein the housing at least partially surrounds the semiconductor circuit, wherein the semiconductor circuit has at least one substrate that is arranged on a flat surface of the heat sink, semiconductor elements that are contacted on the at least one substrate, wherein contact electrodes are connected to the semiconductor circuit and are each led outwards through a housing recess in a cover surface of the housing, wherein the contact electrodes each have a contacting section that is led at least partially outwards, a central section and a connecting section that can be connected to the substrate,wherein the connecting section of the respective contact electrode can be connected to the respective central section by, in particular translationally, bending the contacting section and connecting section with four, in particular rectangularly arranged, contact surfaces on the substrate with a fixed positioning to the housing recess.

[0013] Furthermore, the object is achieved according to the invention by a power converter with at least one such semiconductor module.

[0014] Moreover, the object is achieved according to the invention by a method for producing such a semiconductor module, wherein the contact electrodes are designed as metallic bent parts and are produced with a common punching tool.

[0015] Furthermore, the object is achieved according to the invention by a computer program product comprising instructions which, when the program is executed by a computer, cause the computer to simulate the behavior, in particular thermal, mechanical and / or electrical, of such a semiconductor module. The advantages and preferred embodiments listed below with regard to the semiconductor module can be applied analogously to the power converter, the method and the computer program product.

[0016] The invention is based on the idea of ​​designing contact electrodes of a semiconductor module in such a way that they can be contacted as flexibly as possible on a substrate in a, in particular standardized, housing in order to enable high switching frequencies and power densities. Such a semiconductor module can be, among other things, a power semiconductor module with a power semiconductor circuit which is at least partially surrounded by a housing. Such a power semiconductor circuit has power semiconductor elements, in particular transistors and diodes, arranged on at least one substrate. The at least one substrate, which can be designed, among other things, as a DGB (Direct Copper Bonded) substrate, is arranged on a flat surface of a heat sink, which for example has a metallic base plate.The contact electrodes are connected to the semiconductor circuit, with a contacting section in each case being led at least partially to the outside through a housing recess in a cover surface of the housing. In addition to the contacting section, the contact electrodes have a central section and a connecting section that can be connected to the substrate. The contacting section and the connecting section are each bent, in particular translationally, to the respective central section when fixedly positioned relative to the housing recess. In this context, translational bending is understood to mean a linear bending process about a rectilinear bending axis. Examples of translational bending include draw bending and die bending. The fixed positioning of the contact electrode, in particular of the central section of the contact electrode, relative to the housing recess enables, among other things, arrangement in a standardized housing.Through such a bending process, the connecting section can be connected to four contact surfaces on the substrate, in particular those arranged in a rectangular shape. This allows the contact electrode to be flexibly contacted on the substrate, resulting in degrees of freedom for the layout, so that, for example, lead inductances can be reduced and switching frequencies increased. Furthermore, making the layout more flexible opens up opportunities to optimize the power semiconductor circuit so that higher power densities can be achieved.

[0017] The contact electrodes, which are made from a metallic bent part, in particular a metal sheet, are manufactured using a punching tool, which saves costs.

[0018] A computer program product which comprises instructions which, when the program is executed by a computer, cause the computer to simulate a behavior, in particular thermal, mechanical and / or electrical, of the described semiconductor arrangement can comprise a “digital twin” or be designed as such. Such a digital twin is described, for example, in the published patent application US 2017 / 0286572 A1. The disclosure content of US 2017 / 0286572 A1 is incorporated by reference into the present application. The “digital twin” is, for example, a digital representation of the components relevant for the operation of the semiconductor arrangement.In particular, the computer program has a physics module in which the semiconductor module with the power semiconductor circuit is at least partially mapped and simulates at least the electrical and / or thermal behavior of the mapped parts of the semiconductor module under adjustable operating conditions and / or parameters, such as an arrangement of the semiconductor elements, which are modeled according to a, in particular non-linear, model, and / or configuration of the contact electrodes. The mapped parts of the semiconductor module can, among other things, have a temperature distribution on the substrate or the heat sink that essentially corresponds to a temperature distribution during operation of the real semiconductor module, wherein, for example, an ambient temperature and a load cycle are among the adjustable operating conditions.In this case, the temperature distribution can be output, taking into account the ambient temperature and the load cycle. Additionally or alternatively, the depicted parts of the semiconductor module can have parasitic impedances, e.g., parasitic resistances and / or inductances, which essentially correspond to the parasitic impedances during operation of the actual semiconductor module, where, for example, an ambient temperature and a switching frequency are among the adjustable operating conditions. In this case, a switching behavior can be output, taking into account the ambient temperature and the switching frequency.

[0019] Another embodiment provides for the contacting section and the connecting section to be bent by + / - 90° relative to the respective central section. This optimizes the area enclosed by the bending of the four contact surfaces.

[0020] A further embodiment provides that the contacting section and / or the connecting section of two adjacent contact electrodes are bent in different directions. This allows, among other things, a particularly large or particularly small distance between the contact electrodes to be flexibly realized, particularly in a standard housing, so that improved heat dissipation and / or an increase in the switching frequency can be achieved.

[0021] A further embodiment provides that central sections of the contact electrodes are each arranged to run at least partially perpendicular to the surface, wherein a, in particular rectangular, cross-sectional area of ​​the respective central section has a center point, wherein the centers of the contact electrodes are arranged in a grid. In particular, the contacting section and the connecting section are arranged to run essentially parallel to the surface. In this context, a grid is to be understood as an arrangement of points regularly distributed in a plane, wherein the plane runs in particular parallel to the surface. For example, the centers are arranged in a Cartesian grid, so that the distances between the centers are of uniform length at least in one direction. Such an arrangement enables, among other things, the use of a standardized housing.The module can be scaled easily and cost-effectively thanks to a grid.

[0022] A further embodiment provides for the semiconductor module to have six contact electrodes, with their centers arranged in a 3x2 grid. Such a grid arrangement results in three pairs of contact electrodes. By short-circuiting the contact electrodes in pairs, various circuit topologies can be realized, with the layout being adaptable to the respective circuit topology thanks to the flexible contact electrodes. Thus, various circuit topologies can be realized in the same housing.

[0023] A further embodiment provides that the four contact surfaces of the six contact electrodes on the substrate, which are in particular arranged in a rectangular shape, enclose an area which amounts to at least 20%, in particular 30% of a current-carrying substrate surface. In this context, a current-carrying substrate surface is to be understood as the substrate surface of at least one substrate which is intended, in particular configured, for a load current to flow during operation of the semiconductor module. Thus, a substrate with a current-carrying substrate surface can also be referred to as a load-current-carrying substrate. Such a large enclosed area enables very great flexibility in contacting the contact electrodes. A further embodiment provides that the contact surfaces are distributed unevenly on a current-carrying substrate surface.Through uneven distribution, among other things, improved heat spread can be achieved.

[0024] A further embodiment provides for the contact surfaces to be arranged symmetrically to a longitudinal center axis of a current-carrying substrate surface. The longitudinal center axis divides the current-carrying substrate surface centrally in the longitudinal direction. Such symmetry in the layout enables uniform current distribution between the semiconductor elements, so that high switching frequencies, in particular > 5 kHz, can be achieved.

[0025] A further embodiment provides that the semiconductor circuit has at least one, in particular rectangular, control substrate which is arranged on the flat surface of the heat sink, wherein the at least one control substrate is connected to the at least one substrate via wiring elements, wherein an area of ​​the control substrate amounts to a maximum of 15%, in particular a maximum of 10%, of the area of ​​the at least one substrate. A rectangular control substrate has a rectangular substrate area. By means of such a separate control substrate, an area of ​​the load current-carrying substrate is reduced, which has a positive effect on costs. Furthermore, the at least one separate control substrate prevents signals from crossing on a driver circuit, in particular in a module parallel connection. Furthermore, a more compact layout is made possible.

[0026] A further embodiment provides that the control substrate is arranged between two mounting holes in the heat sink. Such an arrangement optimally utilizes the surface of the heat sink without the need for expensive beveled corners of the circuit carrier. A further embodiment provides that the semiconductor circuit has shunt resistors which are contacted on the substrate, wherein the semiconductor elements and the shunt resistors are arranged symmetrically to a longitudinal center axis of a current-carrying substrate surface. Such symmetry in the layout enables uniform current distribution between the semiconductor elements, so that high switching frequencies, in particular > 5 kHz, can be achieved.

[0027] A further embodiment provides for the semiconductor elements to be arranged symmetrically around at least one contact surface of a contact electrode on the substrate. For example, four semiconductor elements are arranged essentially point-symmetrically around a contact surface of a contact electrode. Such an arrangement avoids long current-carrying conductor lines on the substrate. This reduces, in particular, lead inductances, which has a positive effect on the switching behavior.

[0028] A further embodiment provides that the semiconductor elements comprise transistors and diodes, with the diodes being arranged between the transistors relative to a longitudinal center axis. Since the transistors generate significantly more power dissipation during operation, an arrangement of closely spaced components with high power dissipation is avoided. This achieves the best possible utilization of a temperature spread across the heat sink.

[0029] A further embodiment provides that the production of the contact electrodes comprises the following steps: aligning the asymmetrical metallic bent part with respect to the longitudinal axis using the L-shaped connecting section, first bending of the contacting section to the central section about a first bending axis, and second bending of the L-shaped connecting section about a second bending axis. Using such a production method, the contact electrodes can be produced, in particular from essentially identically designed bent parts, using a common punching tool, which saves time and costs.

[0030] In the following, the invention is described and explained in more detail with reference to the exemplary embodiments shown in the figures.

[0031] It shows :

[0032] FIG 1 shows a schematic three-dimensional representation of a first embodiment of a semiconductor module in an external view,

[0033] FIG 2 shows a schematic three-dimensional representation of the first embodiment of the semiconductor module in an internal view,

[0034] FIG 3 a three-dimensional representation of a contact electrode,

[0035] FIG 4 is a schematic representation of contact electrodes on a substrate in a plan view,

[0036] FIG 5 is a schematic representation of a second embodiment of a semiconductor module in a plan view,

[0037] FIG 6 is a schematic representation of the first embodiment of the semiconductor module in a plan view,

[0038] FIG 7 is a schematic representation of a third embodiment of a semiconductor module in a plan view,

[0039] FIG 8 is a schematic representation of a fourth embodiment of a semiconductor module in a plan view,

[0040] FIG 9 is a schematic diagram of a power converter and

[0041] FIG 10 shows a method for producing a contact electrode. The exemplary embodiments explained below are preferred embodiments of the invention. In the exemplary embodiments, the described components of the embodiments each represent individual features of the invention that are to be considered independently of one another, which also further develop the invention independently of one another and are thus to be regarded as a component of the invention, either individually or in a combination other than that shown. Furthermore, the described embodiments can also be supplemented by further features of the invention already described.

[0042] The same reference symbols have the same meaning in the different figures.

[0043] FIG 1 shows a schematic three-dimensional representation of a first embodiment of a semiconductor module 2 in an external view, which comprises a closed housing 4 with a heat sink 6, wherein the heat sink 6 is designed as a metallic base plate or bottom plate. The metallic bottom plate has a flat surface 7 which defines an xy plane. Furthermore, the housing 4 comprises side surfaces 8 which are connected to the surface 7 of the metallic base plate, and a cover surface 10. The side and cover surfaces 8, 10 are made of a plastic, for example. In addition, the heat sink 6 has four fastening holes 11 arranged in the region of the rounded corners of the rectangular surface 7.

[0044] The semiconductor module 2 has, for example, six contact electrodes 12, 14, 16, 18, 20, 22, which are connected to a semiconductor circuit not shown in FIG. 1 due to the housing 4 and are each led outwards through a housing recess 24 in the cover surface 10 of the housing 4. The housing recess 24 is designed, for example, as an elongated, in particular rectangular, opening in the cover surface 10 of the housing 4. The contact electrodes 12, 14, 16, 18, 20, 22 are designed as metallic stamped and bent parts and each have a contacting section 26, via which the respective contact electrode 12, 14, 16, 18, 20, 22 can be connected by means of a screw, for example to a busbar.The contacting sections 26 of the first and second contact electrodes 12, 14 are each bent away from each other by 90° and can thus be connected individually, while the contacting sections 26 of the third and fourth contact electrodes 16, 18 and of the fifth and sixth contact electrodes 20, 22 are each bent towards each other by 90° and overlap in pairs so that they can be short-circuited in pairs and connected together.

[0045] The housing 4 further comprises lateral cover surfaces 28 arranged on both sides of the cover surface 10, which are arranged in a stepped manner offset from the cover surface 10 of the housing 4. Control pins 30, which are connected to the semiconductor circuit, are guided outwardly through, in particular rectangular, lateral housing recesses 32 in the lateral cover surfaces 28.

[0046] FIG 2 shows a schematic three-dimensional representation of the first embodiment of the semiconductor module 2 in an internal view, wherein the side and top surfaces 8, 10, 28 of the housing 4 are not shown for reasons of clarity. The semiconductor module 2 has a semiconductor circuit 34 which comprises two substrates 36, 38, each with a rectangular current-carrying substrate surface 40. In this context, a current-carrying substrate surface 40 is to be understood as the substrate surface of at least one substrate 36, 38, which is provided for a load current to flow during operation of the semiconductor module 2. A substrate with a current-carrying substrate surface is also referred to as a load current-carrying substrate.

[0047] Furthermore, the semiconductor circuit 34 has two rectangular control substrates 42 arranged on both sides of the substrates 36, 38. The substrates 36, 38 and control substrates 42 are arranged one behind the other in the x-direction and axially symmetrically with respect to a longitudinal central axis 44 on the surface 7 of the heat sink 6. In particular, the substrates 36, 38 and control substrates 42 are materially connected, for example by a soldered or sintered connection, on the surface 7 of the heat sink 6. The rectangular control substrates 42 are each arranged between two fastening holes 11 in the heat sink 6. The substrates 36, 38 and control substrates 42 have a dielectric material layer 45 which contains, for example, a ceramic material, in particular aluminum nitride or aluminum oxide.

[0048] The dielectric material layer 45 has a thickness of 25 pm to 400 pm, in particular 50 pm to 250 pm. The substrates 36, 38 and control substrates 42 can be designed, among other things, as DCB substrates.

[0049] Semiconductor elements 46 are connected in a materially bonded manner, for example by a soldered or sintered connection, on the current-carrying substrates 36, 38, the semiconductor elements 46 being designed as transistors T or as diodes D. The transistors T are designed, for example, as IGBTs or as wide bandgap transistors. The diodes can, for example, each be connected anti-parallel to at least one transistor T. The transistors T and diodes are each arranged in rows running in the y-direction, the rows of diodes D being arranged between the transistors T with respect to the longitudinal central axis 44, so that the resulting greater distance between the rows of transistors T, which have a comparatively high power loss, achieves the best possible temperature spread across the heat sink 6.In particular, the transistors T and the antiparallel diodes D of the respective substrates 36, 38, arranged in a series, are connected in parallel. The semiconductor circuit 34 also has shunt resistors 48, which are contacted on the second substrate 38. The semiconductor elements 46 and the shunt resistors 48 are arranged symmetrically to the longitudinal center axis 44 on the substrates 36, 38.

[0050] In addition to the contacting section 26, the contact electrodes 12, 14, 16, 18, 20, 22 have a central section 50 and a connecting section 52 connectable to the respective substrate 36, 38, wherein the contacting section 26 and the connecting section 52 are each bent by + / - 90° to the respective central section 50. The connecting sections 52 of the contact electrodes 12, 14, 16, 18, 20, 22 are each connected to a contact surface 54 on the respective substrate 36, 38. The contact surfaces 54 are arranged symmetrically to the longitudinal central axis 44 on the substrates 36, 38. In particular, four semiconductor elements 46 are each arranged symmetrically around a contact surface 54 in order to achieve uniform current distribution and thus enable shorter switching times. The semiconductor elements 46 each have a direct current path to a contact surface 54.A direct current path means that no additional semiconductor element or passive discrete component, e.g., a shunt resistor, is located between the respective semiconductor element 46 and the contact surface 54. Such a direct current path achieves a uniform current distribution and a reduction in lead impedances, which also has a positive effect on the switching behavior.

[0051] The control substrates 42 have a metallization with rectangular, in particular square, fields 56, which are uniformly arranged in a grid on the respective control substrate 42. The control pins 30 are designed as freestanding pins, which are connected in a materially bonded manner, for example by a solder or sintered connection, to one of the fields 56.

[0052] FIG 3 shows a three-dimensional representation of a contact electrode 16, which has a contacting section 26, a central section 50 and a connecting section 52 which can be connected to a contact surface 54. The central section 50 of the contact electrodes 16 is arranged so as to run perpendicular to the surface 7. A rectangular cross-sectional area 58 of the central section 50 is arranged so as to run parallel to the surface 7 and has a center point 60. By translatory bending of the contacting section 26 to the central section 50 by a first angle α, a first bend 62 is formed, while by translatory or linear bending of the connecting section 52 to the central section 50 by a second angle β, a second bend 64 is formed.By way of example, the contacting section 26 and the connecting section 52 are bent at right angles to opposite sides of the central section 50, so that the contacting section 26 and the connecting section 52 each run essentially parallel to the surface. In addition, the connecting section 52 has an S-shaped bend 66, as a result of which the connecting section 52 has increased elasticity. The increased elasticity leads to a mechanical relief of the connection between the connecting section 52 and the respective contact surface 54. The further embodiment of the contact electrode 16 in FIG. 3 corresponds to that in FIG. 1 or FIG. 2.

[0053] FIG 4 shows a schematic representation of contact electrodes 12, 14, 16, 18, 20, 22 on a substrate in a plan view, which are designed as in FIG 3 and are arranged in a 3x2 grid. The contact electrodes 12, 14, 16, 18, 20, 22 are arranged symmetrically to the longitudinal central axis 44 and to a transverse axis 67 with respect to their center points 60, so that the distances dx, dy in the x-direction and y-direction between the center points 60 of the contact electrodes 12, 14, 16, 18, 20, 22 are the same. By bending, in particular translationally, the contacting sections 26 and connecting sections 52 to the respective central section 50 with fixed positioning of the respective centers 60, four rectangularly arranged contact surfaces 54 can be connected to the substrate 36 for each contact electrode 12, 14, 16, 18, 20, 22.The four rectangularly arranged contact surfaces 54 of the six contact electrodes 12, 14, 16, 18, 20, 22 enclose an area on the substrate 36 which amounts to at least 20%, in particular 30%, of the current-carrying substrate surface 40.

[0054] By bending the contacting section 26 toward the central section 50, the L-shaped connecting section 52 is also aligned in addition to the contacting section 26. Thus, the contact electrodes 12, 14, 16, 18, 20, 22 can be manufactured from a single metal bent part using a common tool. The further design of the arrangement in FIG. 3 corresponds to that in FIG. 1 and FIG. 2.

[0055] FIG 5 shows a schematic representation of a second embodiment of a semiconductor module 2 in a plan view, wherein the six contact electrodes 12, 14, 16, 18, 20, 22, as shown in FIG 4, are arranged in a 3x2 grid. The contacting sections 26 of the first and second contact electrodes 12, 14 are each bent towards one another by 90° and overlap flatly, so that they can be short-circuited and connected together, while the third and fourth contact electrodes 16, 18 and the fifth and sixth contact electrodes 20, 22 are each bent away from one another in pairs by 90° and can thus be connected individually. For example, the contacting section 26 and the connecting section 52 of the adjacent first and third contact electrodes 12, 16 are bent in different directions. The contact surfaces 54 are unevenly distributed on a current-carrying substrate surface 40 of the substrates 36, 38.As shown in FIG. 4, the four rectangularly arranged contact surfaces 54 of the six contact electrodes 12, 14, 16, 18, 20, 22 on the substrates 36, 38 enclose an area which amounts to at least 20%, in particular 30%, of the current-carrying substrate surface 40 of the substrates 36, 38. The further embodiment of the arrangement in FIG. 5 corresponds to that in FIG. 1 or FIG. 2.

[0056] FIG. 6 shows a schematic representation of the first embodiment of the semiconductor module 2 in a plan view, wherein the side and top surfaces 8, 10, 28 of the housing 4 as well as the contact electrodes 12, 14, 16, 18, 20, 22 and control pins 30 are not shown for reasons of clarity. The control substrates 42 are connected to the respective substrate 36, 38 via wiring elements 68. The contact surfaces 54, just like the contact electrodes 12, 14, 16, 18, 20, 22, are arranged in a 3x2 grid symmetrical to the longitudinal center axis 44 and the transverse axis 67, so that the distances dx, dy in the x-direction and y-direction between the contact surfaces 54 are also equal. The connecting sections 52 of the respective contact electrodes 12, 16, 20; 14, 18, 22 arranged adjacently in the x-direction are bent in the same direction, as shown in FIG. 2.The semiconductor elements 46 are connected to the contact surfaces 54 via parallel wiring elements 68 extending essentially in the x-direction. A sensor 70, in particular a temperature sensor, embodied, for example, as an NTC thermistor (negative temperature coefficient thermistor), is arranged on a control substrate 42. The semiconductor circuit 34 is configured, for example, as a half-bridge. The further design of the arrangement in FIG. 6 corresponds to that in FIG. 1 or FIG. 2.

[0057] FIG. 7 shows a schematic representation of a third embodiment of a semiconductor module in a plan view, wherein the side and cover surfaces 8, 10, 28 of the housing 4 and the contact electrodes 12, 14, 16, 18, 20, 22 are not shown for reasons of clarity. The contact surfaces 54 are arranged symmetrically to the longitudinal central axis 44, with no symmetry to the transverse axis 67, and thus the distances dxl, dx2 in the x-direction are different. The connecting sections 52 of two contact electrodes 12, 16, 20; arranged adjacent in the x-direction 14, 18, 22 are bent in different directions, resulting in different distances dxl, dx2 in the x-direction, while the contact electrodes 12, 14, 16, 18, 20, 22, not shown in FIG. 7, are arranged in a 3x2 grid symmetrical to the longitudinal center axis 44 and the transverse axis 67. The further design of the arrangement in FIG. 7 corresponds to that in FIG. 6.

[0058] FIG 8 shows a schematic representation of a fourth embodiment of a semiconductor module 2 in a plan view, wherein the side and cover surfaces 8, 10, 28 of the housing 4 and the contact electrodes 12, 14, 16, 18, 20, 22 are not shown for reasons of clarity. There is no symmetry of the contact surfaces 54 to the longitudinal center axis 44 or transverse axis 67. The distances dxl, dx2 in the x-direction and the distances dyl, dy2 in the y-direction are each of different sizes, while the contact electrodes 12, 14, 16, 18, 20, 22 not shown in FIG 8 are arranged in a 3x2 grid symmetrical to the longitudinal center axis 44 and the transverse axis 67. The semiconductor circuit 34 is designed, for example, as a t-type NPC, with the layout divided into four quadrants. The semiconductor elements 46 on the first substrate 36 are larger than the semiconductor elements 46 on the second substrate 38.Furthermore, the transistors T on the first substrate 36 are spaced apart as far as possible in order to achieve the best possible temperature spread across the heat sink 6. The further embodiment of the arrangement in FIG. 8 corresponds to that in FIG. 7.

[0059] FIG 9 shows a schematic representation of a power converter 72, which comprises, for example, a semiconductor module 2.

[0060] 10 shows a method for producing a contact electrode 16, wherein firstly a metallic bent part 74 which can be produced by punching is provided, which, due to an L-shaped connecting section 52, is designed asymmetrically with respect to a plane running through a longitudinal axis 76 parallel to the yz plane. The metallic bent part 74 is designed, for example, as a flat metal sheet and is thus essentially symmetrical with respect to a plane running parallel to the xz plane. All metallic bent parts 74 for producing the contact electrodes 12, 16, 20, 14, 18, 22 of a semiconductor module 2 can be produced using a common punching tool. In particular, all metallic bent parts 74 for producing the contact electrodes 12, 16, 20, 14, 18, 22 of a semiconductor module 2 are designed identically.

[0061] The asymmetrical metallic bent part 74 is aligned A with respect to the longitudinal axis 76, so that the L-shaped connecting section 52 is aligned in the +x or alternatively in the -x direction.

[0062] In a further step, a first bending B of the contacting section 26 toward the central section 50 takes place, in particular a translational bending B, around a first bending axis 78. For example, the first bending B takes place by +90° in the +y direction. Alternatively, the first bending B can take place, e.g., by -90°, in the -y direction.

[0063] In a further step, a second bending C of the L-shaped connecting section 52, in particular a translational bending, takes place around a second bending axis 80. For example, the second bending C takes place by -90° in the -y direction. Alternatively, the second bending C can take place, e.g., by +90°, in the +y direction. Furthermore, an S-shaped bend 66 is created in the connecting section 52.

[0064] In summary, the invention relates to a semiconductor module 2 comprising a semiconductor circuit 34 and a housing 4 which comprises a heat sink 6, wherein the housing 4 at least partially surrounds the semiconductor circuit 34, wherein the semiconductor circuit 34 has at least one substrate 36, 38 which is arranged on a flat surface 7 of the heat sink 6, semiconductor elements 46 which are contacted on the at least one substrate 36, 38.In order to provide a semiconductor module 2 that is as flexible as possible and enables high switching frequencies and power densities, it is proposed that contact electrodes 12, 16, 20, 14, 18, 22 are connected to the semiconductor circuit 34 and are each led outwards through a housing recess 24 in a cover surface 10 of the housing 4, wherein the contact electrodes 12, 16, 20, 14, 18, 22 each have a contacting section 26 that is led at least partially outwards, a central section 50 and a connecting section 52 that can be connected to the substrate 36, 38, wherein the connecting section 52 of the respective contact electrode 12, 16, 20, 14, 18, 22 is bent, in particular translationally, to the respective central section 50 with a fixed positioning relative to the housing recess 24 with four, in particular rectangularly arranged, contact surfaces 54 on the substrate 36, 38.

Claims

Patent claims 1. Semiconductor module (2) comprising a semiconductor circuit (34) and a housing (4) which comprises a heat sink (6), wherein the housing (4) at least partially surrounds the semiconductor circuit (34), wherein the semiconductor circuit (34) has at least one substrate (36, 38) which is arranged on a flat surface (7) of the heat sink (6), semiconductor elements (46) which are contacted on the at least one substrate (36, 38), wherein contact electrodes (12, 16, 20, 14, 18, 22) are connected to the semiconductor circuit (34) and are each led outwards through a housing recess (24) in a cover surface (10) of the housing (4), wherein the contact electrodes (12, 16, 20, 14, 18, 22) each have a contacting section (26) which is led at least partially outwards, a central section (50) and a connecting section (52) connectable to the substrate (36, 38), characterized inthat the connecting section (52) of the respective contact electrode (12, 16, 20, 14, 18, 22) can be connected to four, in particular rectangularly arranged, contact surfaces (54) on the substrate (36, 38) by translatory bending of the contacting section (26) and connecting section (52) to the respective central section (50) with a fixed positioning to the housing recess (24), wherein the connecting section (52) of the respective contact electrode (12, 16, 20, 14, 18, 22) is connected to one of the four contact surfaces (54) on the substrate (36, 38).

2. Semiconductor module (2) according to claim 1, wherein the contacting section (26) and the connecting section (52) are each bent by + / - 90° to the respective central section (50).

3. Semiconductor module (2) according to one of claims 1 or 2, wherein the contacting section (26) and / or the connecting section (52) of two contact electrodes (12, 16, 20, 14, 18, 22) arranged adjacently in the x-direction or in the y-direction are bent in different directions.

4. Semiconductor module (2) according to one of the preceding claims, wherein central sections (50) of the contact electrodes (12, 16, 20, 14, 18, 22) are each arranged to run at least partially perpendicular to the surface (7), wherein a, in particular rectangular, cross-sectional area of ​​the respective central section (50) has a center point (60), wherein the centers (60) of the contact electrodes (12, 16, 20, 14, 18, 22) are arranged in a grid.

5. Semiconductor module (2) according to claim 4, comprising six contact electrodes (12, 16, 20; 14, 18, 22), the centers (60) of which are arranged in a 3x2 grid.

6. Semiconductor module (2) according to claim 5, wherein the four contact surfaces (54), in particular arranged in a rectangular shape, of the six contact electrodes (12, 16, 20, 14, 18, 22) on the substrate (36, 38) enclose an area which is at least 20%, in particular 30%, of a current-carrying substrate surface (40).

7. Semiconductor module (2) according to one of claims 4 to 6, wherein the contact surfaces (54) are unevenly distributed on a current-carrying substrate surface (40).

8. Semiconductor module (2) according to one of claims 4 to 6, wherein the contact surfaces (54) are arranged symmetrically to a longitudinal central axis (44) of a current-carrying substrate surface (40).

9. Semiconductor module (2) according to one of the preceding claims, wherein the semiconductor circuit (34) has at least one, in particular rectangular, control substrate (42) which is arranged on the flat surface (7) of the heat sink (6), wherein the at least one control substrate (42) is connected to the at least one substrate (36, 38) via wiring elements (68), wherein an area of ​​the control substrate (42) is at most 15%, in particular at most 10%, of the area of ​​the at least one substrate (36, 38).

10. Semiconductor module (2) according to claim 9, wherein the control substrate (42) is arranged between two mounting holes (11) of the heat sink (6).

11. Semiconductor module (2) according to one of the preceding claims, wherein the semiconductor circuit (34) has shunt resistors (48) which are contacted on the substrate (36, 38), wherein the semiconductor elements (46) and the shunt resistors (48) are arranged symmetrically to a longitudinal central axis (44) of a current-carrying substrate surface (40).

12. Semiconductor module (2) according to one of the preceding claims, wherein semiconductor elements (46) are arranged symmetrically around at least one contact surface (54) of a contact electrode (12, 16, 20, 14, 18, 22) on the substrate (36, 38).

13. Semiconductor module (2) according to one of the preceding claims, wherein the semiconductor elements (46) comprise transistors (T) and diodes (D), wherein the diodes (D) are arranged between the transistors (T) with respect to a longitudinal central axis (44).

14. Power converter (72) with at least one semiconductor module (2) according to one of the preceding claims.

15. A method for producing a semiconductor module (2) according to one of claims 1 to 13, wherein the contact electrodes (12, 16, 20, 14, 18, 22) are designed as metallic bent parts (74) and are produced with a common punching tool.

16. The method according to claim 15, wherein the production of the contact electrodes (12, 16, 20, 14, 18, 22) comprises the following steps: - Aligning (A) the asymmetrical metallic bent part (74) with respect to the longitudinal axis (76) using the L-shaped connecting section 52, - first bending (B) of the contacting section (26) to the central section (50) about a first bending axis (78), - second bending (C) of the L-shaped connecting section (52) about a second bending axis (80).

17. Computer program product, comprising instructions which, when executed by a computer, cause the computer to carry out a function, in particular an electrical, mechanical and / or to simulate thermal behavior of a semiconductor module (2) according to one of claims 1 to 13.

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