Power semiconductor module, inverter, dc-dc converter and method for producing a power semiconductor module

Abstract

The invention relates to a power semiconductor module (1) having a wiring substrate (2) with a bottom side (4) and a top side (3) and a number of power semiconductor components (5) arranged at least on the top side (3), wherein the wiring substrate (2) has a number of press-in connections (11) for receiving press-in pins (14) for connecting signal connections of the wiring substrate (2) to a control component, wherein the power semiconductor components (5) are embedded in a plastic housing compound and the press-in connections (11) are kept clear of the plastic housing compound.

Description

[0001] Description

[0002] Power semiconductor module, inverter, DCDC converter and method for producing a power semiconductor module

[0003] The present invention relates to a power semiconductor module comprising a wiring substrate and at least one power semiconductor component. It further relates to an inverter and a DC / DC converter comprising such a power semiconductor module, as well as to methods for producing a power semiconductor module and an inverter.

[0004] Connecting wires are used to connect power semiconductor modules to external circuits, such as an external control component. There is a need to make external circuits, such as a control unit, and their connection to the power modules of a power assembly more compact.

[0005] It is therefore an object of the present invention to realize a power semiconductor module with a wiring substrate and with at least one power semiconductor component embedded in a plastic housing compound, which can be connected to an external control component in a compact manner. Furthermore, a method for producing such a power semiconductor module is to be specified.

[0006] This problem is solved by the subject matter of the independent claims. Advantageous embodiments and further developments are the subject matter of the dependent claims.

[0007] According to one aspect of the invention, a power semiconductor module is specified, comprising a wiring substrate with a bottom side and a top side and a number of power semiconductor components arranged at least on the top side, wherein the wiring substrate has a number of press-in connections for receiving press-in pins for connecting signal connections of the wiring substrate to a control component, wherein the power semiconductor components are embedded in a plastic housing compound and the press-in connections are kept free from the plastic housing compound. The power semiconductor module has the advantage that it can be constructed particularly compactly. It combines the known connection technology via press-in pins with the mechanical environment of a power semiconductor module with a plastic housing.

[0008] In particular, it can be provided that the plastic housing compound has through holes in the area of ​​the press-in connections.

[0009] In this embodiment, the press-in terminals are completely surrounded by the plastic housing compound and are exposed at the bottom of the through-holes formed in the plastic housing compound. This embodiment has the advantage that the plastic housing supports the mechanically sensitive area of ​​the press-in terminals. The electrical connection between the control component and the power semiconductor module is thus particularly stable.

[0010] According to one embodiment, the through-holes have a conical shape. In particular, they can be truncated conically and have their smallest diameter in the area of ​​the wiring substrate. Such through-holes are particularly easy to manufacture and simplify contacting due to their self-centering shape.

[0011] The wiring substrate can be designed, for example, as a PCB, a ceramic substrate, or an embedded substrate—that is, a wiring substrate that combines areas of different materials. Due to the high heat loss generated during operation, ceramic substrates are often used for power semiconductor modules. Depending on the application, other substrates are also suitable for the power semiconductor module.

[0012] According to a further aspect of the invention, an inverter or a power inverter, in particular for an electric drive device of a motor vehicle, is specified, comprising the described power semiconductor module and a control component, wherein the power semiconductor module is electrically contacted with the control component via a number of press-in pins.

[0013] The control component can be arranged above the power semiconductor module so that the planes of the wiring substrates are parallel. The press-fit pins connect press-fit terminals on the wiring substrate of the power semiconductor module to corresponding press-fit terminals of the control component.

[0014] Thus, the control component has a wiring substrate with press-in terminals corresponding to the press-in terminals of the power semiconductor module. This is understood here and below to mean that the press-in terminals of the power semiconductor module can be connected to the corresponding press-in terminals of the control component due to their geometric arrangement.

[0015] According to one embodiment, the wiring substrate of the control component is designed as a PCB. However, other wiring technologies are also conceivable.

[0016] According to a further aspect of the invention, a DCDC converter is specified which has a previously described power semiconductor module and a control component, wherein the power semiconductor module is electrically contacted with the control component via a number of press-in pins.

[0017] According to one aspect of the invention, a method for producing a power semiconductor module is specified, which comprises providing a wiring substrate with at least one power semiconductor component arranged thereon, wherein the wiring substrate has a number of press-in terminals for receiving press-in pins for connecting signal terminals of the wiring substrate to a control component. Furthermore, the method comprises embedding the at least one power semiconductor component in a plastic housing compound to form a plastic housing, wherein the press-in terminals are kept free from the plastic housing compound.

[0018] To keep the press-in connections free, film-assisted molding technology can be used, for example, or corresponding sliders in the mold tool.

[0019] The method has the advantage that a stable and electrically conductive connection between a power semiconductor module and its control component can be established in a technically very simple manner. According to a further aspect of the invention, a method for producing an inverter or a power inverter is specified, comprising producing a power semiconductor module according to the described method and providing a control component with a wiring substrate and corresponding press-in terminals arranged therein for receiving press-in pins. The method further comprises contacting the power semiconductor module with the control component via a number of press-in pins, which are pressed into the press-in terminals of the power semiconductor module and into the corresponding terminals of the control component.

[0020] Embodiments of the invention are described below by way of example with reference to schematic drawings.

[0021] Figure 1 shows a plan view of a power semiconductor module according to an embodiment of the invention;

[0022] Figure 2 shows a sectional view of the power semiconductor module according to Figure 1;

[0023] Figure 3 shows a sectional view of an inverter according to an embodiment of the invention and

[0024] Figure 4 shows a sectional view of an inverter according to an alternative embodiment of the invention.

[0025] Figure 1 shows a power semiconductor module 1 in a plan view, while Figure 2 shows a sectional view of the same power semiconductor module 1 along the section line A - A'.

[0026] The power semiconductor module 1 has a wiring substrate 2, which in the embodiment shown in Figures 2 and 3 is designed as a PCB (printed circuit board). The wiring substrate 2 has a top side 3 and an opposite bottom side 4. A number of power semiconductor components 5 are arranged on the top side 3.

[0027] The power semiconductor components 5 are embedded in a plastic housing 6, which also covers significant areas of the top side 3 of the wiring substrate 2. In the embodiment shown, the plastic housing 6 also encloses areas of the bottom side 4 of the wiring substrate 2, although other areas of the bottom side 4, not shown in the figures and designed as cooling surfaces, are kept free of plastic housing compound.

[0028] The power semiconductor module 1 has power terminals 7, 8, and 9, with the power terminals 7 and 8 being the voltage supply and the power terminal 9 being the phase connection. The power terminals 7, 8, and 9 are formed as metallic tabs extending from the plastic housing 6. Alternatively, the power terminals 7, 8, and 9 can also be arranged differently; for example, the voltage supply can be arranged in two layers, one above the other.

[0029] The plastic housing 6 further comprises a number of through holes 10 in which press-in terminals 11 of the wiring substrate 2 are exposed. Control terminals (not shown) of the power semiconductor components 5 of the power semiconductor module 1 can be contacted via the press-in terminals 11.

[0030] Figure 3 shows an inverter 30 comprising the power semiconductor module 1 according to Figures 1 and 2. The inverter 30 further comprises a control component 20, which is connected to the power semiconductor module 1 via a number of press-in pins 14. For this purpose, the control component 20 has, in its wiring substrate 12, a number of press-in terminals 13 corresponding to the press-in terminals 11 of the power semiconductor module 1, which correspond in their arrangement to the press-in terminals 11 of the power semiconductor module 1, so that a press-in pin 14 can be guided through a press-in terminal 11 of the power semiconductor module 1 and the corresponding press-in terminal 13 of the control component 20 in order to electrically connect them to one another.

[0031] In the view shown, only the wiring substrate 12 of the control component 20 is shown; components arranged thereon are omitted.

[0032] Figure 4 shows a sectional view of an inverter 30 with a power semiconductor module 1 according to another embodiment of the invention. This differs from that shown in Figures 1 to 3 in that the wiring substrate 2 is formed as a ceramic substrate, for example, as a DCB (direct copper bonded) or AMB (active metal brazing).

[0033] 1 power semiconductor module

[0034] 2 Wiring substrate

[0035] 3 Top

[0036] 4 Bottom

[0037] 5 Power semiconductor component

[0038] 6 plastic housings

[0039] 7 Power connection

[0040] 8 Power connection

[0041] 9 Power connection

[0042] 10 through hole

[0043] 11 Press-in connection

[0044] 12 Wiring substrate

[0045] 13 corresponding press-in connection

[0046] 14 press-in pin

[0047] 20 Control component

[0048] 30 inverters

Claims

Patent claims 1. Power semiconductor module (1) comprising a wiring substrate (2) with a bottom side (4) and a top side (3) and a number of power semiconductor components (5) arranged at least on the top side (3), wherein the wiring substrate (2) has a number of press-in connections (11) for receiving press-in pins (14) for connecting signal connections of the wiring substrate (2) to a control component, wherein the power semiconductor components (5) are embedded in a plastic housing compound and the press-in connections (11) are kept free from the plastic housing compound.

2. Power semiconductor module (1) according to claim 1, wherein the plastic housing compound (6) has through holes (10) in the region of the press-in connections (11).

3. Power semiconductor module (1) according to claim 2, wherein the through holes (10) have a conical shape.

4. Power semiconductor module (1) according to one of claims 1 to 3, wherein the wiring substrate (2) is designed as a PCB, as a ceramic substrate or as an embedded substrate.

5. Inverter (30) comprising a power semiconductor module (1) according to one of claims 1 to 4 and a control component (20), wherein the power semiconductor module (1) is electrically contacted with the control component (20) via a number of press-in pins (14).

6. Inverter (30) according to claim 5, wherein the control component (20) has a wiring substrate (12) with press-in terminals (13) corresponding to the press-in terminals (11) of the power semiconductor module (1).

7. Inverter (30) according to claim 6, wherein the wiring substrate (12) of the control component (20) is formed as a PCB.

8. DCDC converter, comprising a power semiconductor module (1) according to one of claims 1 to 4 and a control component, wherein the power semiconductor module is electrically contacted with the control component via a number of press-in pins.

9. A method for producing a power semiconductor module (1), comprising - Providing a wiring substrate (2) with at least one power semiconductor component (5) arranged thereon, wherein the wiring substrate (2) has a number of press-in terminals (11) for receiving press-in pins (14) for connecting signal terminals of the wiring substrate (2) to a control component (20), - Embedding the at least one power semiconductor component (1) in a plastic housing compound to form a plastic housing (6), wherein the press-in connections (11) are kept free from the plastic housing compound.

10. A method for producing an inverter (30), comprising - producing a power semiconductor module (1) according to the method of claim 9; - Providing a control component (20) with a wiring substrate (12) and corresponding press-in terminals (13) arranged therein for receiving press-in pins (14) and - Contacting the power semiconductor module (1) with the control component (20) via a number of press-in pins (14) which are pressed into the press-in connections (11) of the power semiconductor module (1) and into the corresponding press-in connections (13) of the control component (20).

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