Semiconductor device

Abstract

This semiconductor device comprises one or more switching elements, a support substrate that supports the one or more switching elements, one or more leads, and a sealing resin. The sealing resin covers the one or more switching elements and parts of the support substrate and the one or more leads. The support substrate has an exposed surface exposed from the sealing resin on a first side in a first direction, which is the thickness direction of the support substrate. The one or more leads include a terminal having a mounting surface facing the first side in the first direction.

Description

Semiconductor Devices

[0001] The present disclosure relates to semiconductor devices.

[0002] Patent Document 1 discloses an example of a conventional semiconductor device. The semiconductor device disclosed in this document includes a semiconductor element that performs a switching operation, leads, and a sealing resin. The leads have bent portions that protrude from the sealing resin, and their tips point in the thickness direction.

[0003] Japanese Patent Application Laid-Open No. 2022-123260

[0004] [Summary] When mounting the semiconductor device disclosed in Patent Document 1 on a mounting board or the like, it is necessary to insert the tips of the leads into holes provided in the mounting board or the like.

[0005] An object of the present disclosure is to provide a semiconductor device that is improved over conventional semiconductor devices. In particular, the present disclosure has been devised in light of the above-mentioned circumstances, and an object of the present disclosure is to provide a semiconductor device that can improve the efficiency of mounting work.

[0006] A semiconductor device provided by a first aspect of the present disclosure includes one or more switching elements, a support substrate supporting the one or more switching elements, one or more leads, and a sealing resin covering the one or more switching elements, a portion of the support substrate, and a portion of the one or more leads, wherein the support substrate has an exposed surface exposed from the sealing resin on a first side in a first direction that is a thickness direction of the support substrate, and the one or more leads include terminals having mounting surfaces facing the first side in the first direction.

[0007] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0008] FIG. 1 is a plan view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 2 is a front view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 3 is a back view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 4 is a right side view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 5 is a left side view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 6 is a bottom view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 7 is a partial bottom view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 8 is a plan view showing a switching element of the semiconductor device according to the first embodiment of the present disclosure. FIG. 9 is a partially enlarged cross-sectional view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 10 is a cross-sectional view taken along line X-X in FIG. 7. FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 7. FIG. 12 is a cross-sectional view taken along line XII-XII in FIG. 7. FIG. 13 is a cross-sectional view taken along line XIII-XIII in FIG. 7. FIG. 14 is a cross-sectional view taken along line XIV-XIV in FIG. 7. FIG. 15 is a circuit diagram showing a semiconductor device according to the first embodiment of the present disclosure. FIG. 16 is a partial bottom view showing a first modified example of the semiconductor device according to the first embodiment of the present disclosure. FIG. 17 is a cross-sectional view showing a second modified example of the semiconductor device according to the first embodiment of the present disclosure. FIG. 18 is a cross-sectional view showing a third modified example of the semiconductor device according to the first embodiment of the present disclosure. FIG. 19 is a cross-sectional view showing a fourth modified example of the semiconductor device according to the first embodiment of the present disclosure. FIG. 20 is a partially enlarged cross-sectional view showing a fifth modified example of the semiconductor device according to the first embodiment of the present disclosure. FIG. 21 is a partially enlarged cross-sectional view showing a sixth modified example of the semiconductor device according to the first embodiment of the present disclosure. FIG. 22 is a bottom view showing a seventh modified example of the semiconductor device according to the first embodiment of the present disclosure. FIG. 23 is a cross-sectional view showing an eighth modified example of the semiconductor device according to the first embodiment of the present disclosure. FIG. 24 is a partial bottom view showing a semiconductor device according to the second embodiment of the present disclosure. FIG. 25 is a cross-sectional view taken along line XXV-XXV in FIG. 24. FIG. 26 is a partially enlarged cross-sectional view showing the semiconductor device according to the second embodiment of the present disclosure. FIG. 27 is a cross-sectional view taken along line XXVII-XXVII in FIG. 24. FIG. 28 is a circuit diagram showing a semiconductor device according to a second embodiment of the present disclosure.

[0009] DETAILED DESCRIPTION Preferred embodiments of the present disclosure will now be described in detail with reference to the drawings.

[0010] The terms "first," "second," "third," etc. in this disclosure are used for identification purposes only and are not intended to impose any ranking on their objects.

[0011] In this disclosure, unless otherwise specified, "a certain object A is formed on a certain object B" and "a certain object A is formed on a certain object B" include "a certain object A is formed directly on a certain object B" and "a certain object A is formed on a certain object B with another object interposed between the certain object A and the certain object B." Similarly, "a certain object A is disposed on a certain object B" and "a certain object A is disposed on a certain object B" include "a certain object A is disposed directly on a certain object B" and "a certain object A is disposed on a certain object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, "a certain object A is located on a certain object B" includes "a certain object A is located on a certain object B with a certain object A in contact with the certain object B" and "a certain object A is located on a certain object B with another object interposed between the certain object A and the certain object B." Furthermore, unless otherwise specified, the phrase "an object A overlaps an object B when viewed in a certain direction" includes "an object A overlaps the entire object B" and "an object A overlaps a part of an object B." Furthermore, in the present disclosure, "a surface A faces in (one side or the other side of) direction B" is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is tilted with respect to direction B.

[0012] 1 to 15 show a semiconductor device according to a first embodiment of the present disclosure. The semiconductor device A1 of this embodiment includes one or more switching elements 2, a support substrate 1, one or more leads 5, and a sealing resin 7. The semiconductor device A1 may include a plurality of first conductive connection members 81, a plurality of second conductive connection members 82, and a thermistor 87.

[0013] FIG. 1 is a plan view showing the semiconductor device A1. FIG. 2 is a front view showing the semiconductor device A1. FIG. 3 is a back view showing the semiconductor device A1. FIG. 4 is a right side view showing the semiconductor device A1. FIG. 5 is a left side view showing the semiconductor device A1. FIG. 6 is a bottom view showing the semiconductor device A1. FIG. 7 is a partial bottom view showing the semiconductor device A1. FIG. 8 is a plan view showing a switching element of the semiconductor device A1. FIG. 9 is a partially enlarged cross-sectional view showing the semiconductor device A1. FIG. 10 is a cross-sectional view taken along line X-X in FIG. 7. FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 7. FIG. 12 is a cross-sectional view taken along line XII-XII in FIG. 7. FIG. 13 is a cross-sectional view taken along line XIII-XIII in FIG. 7. FIG. 14 is a cross-sectional view taken along line XIV-XIV in FIG. 7. FIG. 15 is a circuit diagram showing the semiconductor device A1. In FIG. 7, the outline of the sealing resin 7 is indicated by an imaginary line (two-dot chain line).

[0014] In the description of the semiconductor device A1, the thickness direction (direction in a plan view) of the support substrate 1 is referred to as the "first direction z." A direction perpendicular to the first direction z is an example of the "second direction" of the present disclosure and is referred to as the "second direction y." A direction perpendicular to the first direction z and the second direction y is referred to as the "third direction x." One side of the first direction z is referred to as the first side z1, and the other side is referred to as the z2 side. One side of the second direction y is referred to as the first side y1, and the other side is referred to as the second side y2. One side of the third direction x is referred to as the first side x1, and the other side is referred to as the second side x2.

[0015] 1, 7, and 9 to 14, the support substrate 1 supports one or more switching elements 2. The support substrate 1 supporting one or more switching elements 2 includes a form in which the one or more switching elements 2 are directly supported by being directly bonded to the support substrate 1, and a form in which the one or more switching elements 2 are indirectly supported with another member interposed between the one or more switching elements 2 and the support substrate 1.

[0016] The specific configuration of the support substrate 1 is not limited in any way. The support substrate 1 may be formed, for example, of a DBC (Direct Bonded Copper) substrate or an AMB (Active Metal Brazing) substrate. In this embodiment, the support substrate 1 includes an insulating layer 10, a first metal layer 11, and a second metal layer 12. The support substrate 1 has an exposed surface 1a. The exposed surface 1a faces a first side z1 in the first direction z. The thickness of the support substrate 1 (the dimension in the first direction z) is not particularly limited and may be, for example, 0.4 mm or more and 3.0 mm or less. The exposed surface 1a may be abutted against or bonded to, for example, a heat sink 92 when the semiconductor device A1 is in use.

[0017] The insulating layer 10 is made of an insulating material, such as a ceramic with excellent thermal conductivity. Examples of such ceramics include silicon nitride (SiN) and alumina (Al2O3). The insulating layer 10 is not limited to ceramics and may be an insulating resin sheet or the like. The shape of the insulating layer 10 is not particularly limited and may be, for example, rectangular in plan view. In this embodiment, the insulating layer 10 has an elongated rectangular shape with the third direction x as the longitudinal direction when viewed in the first direction z. The thickness of the insulating layer 10 is not particularly limited and may be, for example, 0.05 mm or more and 1.0 mm or less.

[0018] The first metal layer 11 is located on the second side z2 of the insulating layer 10 in the first direction z. The constituent material of the first metal layer 11 includes a metal such as copper (Cu). The constituent material may also include a material other than copper, such as aluminum (Al). The thickness of the first metal layer 11 is not particularly limited and may be, for example, 0.1 mm or more and 1.5 mm or less.

[0019] The first metal layer 11 may include a first portion 111, a second portion 112, a third portion 113, and a fourth portion 114. The surfaces of the first portion 111 to the fourth portion 114 may be plated with, for example, silver (Ag).

[0020] The first portion 111 is located closer to the first side x1 in the third direction x. The second portion 112 is located on the second side x2 in the third direction x with respect to the first portion 111 and is adjacent to the first portion 111. The third portion 113 is located on the second side x2 in the third direction x with respect to the second portion 112 and is adjacent to the second portion 112. The fourth portion 114 is located on the second side x2 in the third direction x with respect to the third portion 113 and is adjacent to the third portion 113.

[0021] The second metal layer 12 is located on a first side z1 in the first direction z of the insulating layer 10. The constituent material of the second metal layer 12 is not limited in any way and may include, for example, a metal. In this embodiment, the constituent material of the second metal layer 12 may be the same as the constituent material of the first metal layer 11. The second metal layer 12 constitutes an exposed surface 1a. The exposed surface 1a is a flat surface facing the first side z1 in the first direction z. The exposed surface 1a is exposed from the sealing resin 7. A heat sink 92 shown in FIGS. 10 to 14 may be attached to the exposed surface 1a.

[0022] The sealing resin 7 covers one or more switching elements 2, a portion of the support substrate 1, and a portion of one or more leads 5. The constituent material of the sealing resin 7 is not particularly limited, and an insulating material such as epoxy resin or silicone gel may be used as appropriate.

[0023] The sealing resin 7 may have a first resin surface 71, a second resin surface 72, a third resin surface 73, a fourth resin surface 74, a fifth resin surface 75, and a sixth resin surface 76. The second resin surface 72 and the first resin surface 71 are surfaces facing opposite each other in the first direction z, and may both be flat surfaces perpendicular to the first direction z. The first resin surface 71 faces a first side z1 in the first direction z, and the second resin surface 72 faces a second side z2 in the first direction z. An exposed surface 1a is exposed from the first resin surface 71. The exposed surface 1a and the first resin surface 71 may be flush with each other or may be positioned differently in the first direction z. The first resin surface 71 may have a frame shape surrounding the exposed surface 1a in a plan view.

[0024] The third resin surface 73, fourth resin surface 74, fifth resin surface 75, and sixth resin surface 76 are connected to both the first resin surface 71 and the second resin surface 72 and are sandwiched between them in the first direction z. The third resin surface 73 and the fourth resin surface 74 are spaced apart in the third direction x. The third resin surface 73 faces a first side x1 in the third direction x, and the fourth resin surface 74 faces a second side x2 in the third direction x. The fifth resin surface 75 and the sixth resin surface 76 are spaced apart in the second direction y. The fifth resin surface 75 faces a first side y1 in the second direction y, and the sixth resin surface 76 faces a second side y2 in the second direction y.

[0025] The sealing resin 7 may have one or more grooves 711. The one or more grooves 711 are recessed from the first resin surface 71 toward the second side z2 in the first direction z. In the example shown, the one or more grooves 711 extend in the third direction x. In the example shown, the sealing resin 7 has two grooves 711. The two grooves 711 are located on both sides of the exposed surface 1 a in the second direction y.

[0026] The sealing resin 7 may have one or more fixing recesses 771. The one or more fixing recesses 771 are recessed in the third direction x. In the illustrated example, the sealing resin 7 has two fixing recesses 771. The two fixing recesses 771 are located on opposite sides of the third direction x. As shown in FIG. 14 , the fixing recesses 771 may be used to accommodate, for example, part of a screw 921 for fixing the heat sink 92 to the semiconductor device A1. Furthermore, a through hole 911 may be provided in the mounting substrate 91. The through hole 911 can accommodate part of the screw 921.

[0027] The sealing resin 7 may have one or more first recesses 772 and one or more second recesses 773. The one or more first recesses 772 are recessed toward a second side y2 in the second direction y. The one or more second recesses 773 are recessed toward a first side y1 in the second direction y. In the illustrated example, the sealing resin 7 has a plurality of first recesses 772 and a plurality of second recesses 773.

[0028] The number and specific configuration of the one or more switching elements 2 are not limited in any way. In the present embodiment, the one or more switching elements 2 include a first switching element 2A, a second switching element 2B, a third switching element 2C, a fourth switching element 2D, a fifth switching element 2E, and a sixth switching element 2F. The first switching element 2A, the second switching element 2B, the third switching element 2C, the fourth switching element 2D, the fifth switching element 2E, and the sixth switching element 2F may be, for example, metal-oxide-semiconductor field-effect transistors (MOSFETs) including a silicon carbide (SiC) substrate. The first switching element 2A, the second switching element 2B, the third switching element 2C, the fourth switching element 2D, the fifth switching element 2E, and the sixth switching element 2F may be MOSFETs including a silicon (Si) substrate instead of a SiC substrate. The first switching element 2A, the second switching element 2B, the third switching element 2C, the fourth switching element 2D, the fifth switching element 2E and the sixth switching element 2F may be, for example, an IGBT or a MOSFET containing GaN (gallium nitride).

[0029] Each of the first switching element 2A, the second switching element 2B, the third switching element 2C, the fourth switching element 2D, the fifth switching element 2E, and the sixth switching element 2F may have an element body 20, a first electrode 21, a second electrode 22, and a third electrode 23. The element body 20 is a portion including a SiC substrate or the like. The first electrode 21 is located on a first side z1 of the element body 20 in the first direction z. The second electrode 22 and the third electrode 23 are located on a second side z2 of the element body 20 in the first direction z. The shapes and arrangements of the first electrode 21, the second electrode 22, and the third electrode 23 are not limited. In the illustrated example, the second electrode 22 is larger than the third electrode 23 when viewed in the first direction z. The second electrode 22 may include two separated regions when viewed in the first direction z. In the present embodiment, the first switching element 2A, the second switching element 2B, the third switching element 2C, the fourth switching element 2D, the fifth switching element 2E, and the sixth switching element 2F are MOSFETs including a SiC substrate, and the first electrode 21 may be a drain electrode, the second electrode 22 may be a source electrode, and the third electrode 23 may be a gate electrode.

[0030] The first switching element 2A, the second switching element 2B, and the third switching element 2C are located on the first portion 111. The first switching element 2A, the second switching element 2B, and the third switching element 2C may be joined to the first portion 111 by a conductive bonding material 29. The conductive bonding material 29 may be, for example, solder, a metal paste, a metal sintered material, or the like. The first electrode 21 of each of the first switching element 2A, the second switching element 2B, and the third switching element 2C is conductively connected to the first portion 111 by the conductive bonding material 29.

[0031] The fourth switching element 2D is located on the second portion 112. The fourth switching element 2D is joined to the second portion 112 by a conductive bonding material 29. As a result, the first electrode 21 of the fourth switching element 2D is electrically connected to the second portion 112 by the conductive bonding material 29.

[0032] The fifth switching element 2E is located on the third portion 113. The fifth switching element 2E is joined to the third portion 113 by a conductive bonding material 29. As a result, the first electrode 21 of the fifth switching element 2E is electrically connected to the third portion 113 by the conductive bonding material 29.

[0033] The sixth switching element 2F is located on the fourth portion 114. The sixth switching element 2F is joined to the fourth portion 114 by a conductive bonding material 29. As a result, the first electrode 21 of the sixth switching element 2F is electrically connected to the fourth portion 114 by the conductive bonding material 29.

[0034] The thermistor 87 is a temperature detection element and may be mounted on the first metal layer 11, for example. The thermistor 87 is a resistor whose electrical resistance changes greatly with temperature, and the resistance value may change in response to the ambient temperature, thereby changing the voltage between its terminals. The ambient temperature of the thermistor 87 may be detected based on the voltage between its terminals. The characteristics of the thermistor 87 are not limited. The thermistor 87 may be an NTC (negative temperature coefficient) thermistor, a PTC (positive temperature coefficient) thermistor, or a thermistor with other characteristics.

[0035] There is no limitation on the number and configuration of the one or more leads 5. In this embodiment, the semiconductor device A1 may include one or more power leads 5 and one or more control leads 6 as the one or more leads 5.

[0036] The one or more power leads 5 and the one or more control leads 6 may contain a metal. The metal constituting the one or more power leads 5 and the one or more control leads 6 is not particularly limited and may be, for example, copper, aluminum, iron (Fe), oxygen-free copper, or an alloy thereof (e.g., a Cu—Sn alloy, a Cu—Zr alloy, a Cu—Fe alloy, etc.). The one or more power leads 5 and the one or more control leads 6 may be plated with nickel (Ni). The one or more power leads 5 and the one or more control leads 6 may be formed, for example, by pressing a mold against a metal plate, or by patterning a metal plate by etching. The method for forming the one or more power leads 5 and the one or more control leads 6 is not particularly limited. The thickness of the one or more power leads 5 and the one or more control leads 6 is not particularly limited and may be, for example, 0.4 mm or more and 0.8 mm or less. The one or more power leads 5 and the one or more control leads 6 are spaced apart from each other.

[0037] In this embodiment, the one or more power leads 5 include a first power lead 5A, a second power lead 5B, a third power lead 5C, a fourth power lead 5D, and a fifth power lead 5E. The one or more control leads 6 include a first control lead 6A, a second control lead 6B, a third control lead 6C, a fourth control lead 6D, a fifth control lead 6E, a sixth control lead 6F, a seventh control lead 6G, an eighth control lead 6H, a ninth control lead 6J, a tenth control lead 6K, an eleventh control lead 6L, a twelfth control lead 6M, a thirteenth control lead 6P, and a fourteenth control lead 6Q.

[0038] In this embodiment, the first power lead 5A, the second power lead 5B, the third power lead 5C, the fourth power lead 5D, and the fifth power lead 5E form a conduction path to one or more switching elements 2. The first power lead 5A, the second power lead 5B, the third power lead 5C, the fourth power lead 5D, and the fifth power lead 5E are spaced apart from one another in the third direction x.

[0039] The first power lead 5A includes a first power terminal 51A. The first power terminal 51A is a portion of the first power lead 5A that protrudes from the fifth resin surface 75 toward a first side y1 in the second direction y. The first power terminal 51A has a mounting surface 511. The mounting surface 511 faces a second side z2 in the first direction z and is conductively joined to a mounting substrate 91 when the semiconductor device A1 is mounted on the mounting substrate 91, for example. The position of the mounting surface 511 in the first direction z may be the same as that of the second resin surface 72, or may be closer to the second side z2 than the second resin surface 72.

[0040] The first power lead 5A may include a first auxiliary terminal 59A. The first auxiliary terminal 59A is located on a first side x1 in the third direction x with respect to the first power terminal 51A. The first auxiliary terminal 59A may have a mounting surface 511.

[0041] The first power lead 5A may include a pad portion 52A and a bonding portion 53A. The pad portion 52A is located on a second side y2 in the second direction y with respect to the first power terminal 51A and is covered with the sealing resin 7. The pad portion 52A may be located on a second side z2 in the first direction z with respect to the support substrate 1. The pad portion 52A may be spaced apart from the support substrate 1 as viewed in the first direction z. The bonding portion 53A may be located on the second side y2 in the second direction y with respect to the pad portion 52A. The bonding portion 53A is electrically connected to the first portion 111. This electrically connected connection may be achieved in various ways, such as by using a conductive bonding material or by welding including laser welding.

[0042] The second power lead 5B may be located on the second side x2 in the third direction x with respect to the first power lead 5A. The second power lead 5B includes a second power terminal 51B. The second power terminal 51B is a portion of the second power lead 5B that protrudes from the fifth resin surface 75 to the first side y1 in the second direction y. The second power terminal 51B has a mounting surface 511.

[0043] The second power lead 5B may include a pad portion 52B. The pad portion 52B is located on a second side y2 in the second direction y with respect to the second power terminal 51B, and is covered with the sealing resin 7. The pad portion 52B may be located on a second side z2 in the first direction z with respect to the support substrate 1. The pad portion 52B may be spaced apart from the support substrate 1 when viewed in the first direction z.

[0044] The third power lead 5C may be located between the first power lead 5A and the second power lead 5B in the third direction x. The third power lead 5C includes a third power terminal 51C. The third power terminal 51C is a portion of the third power lead 5C that protrudes from the fifth resin surface 75 toward the first side y1 in the second direction y. The third power terminal 51C has a mounting surface 511.

[0045] The third power lead 5C may include a pad portion 52C and a bonding portion 53C. The pad portion 52C is located on a second side y2 in the second direction y with respect to the third power terminal 51C and is covered with the sealing resin 7. The pad portion 52C may be located on a second side z2 in the first direction z with respect to the support substrate 1. The pad portion 52C may be spaced apart from the support substrate 1 as viewed in the first direction z. The bonding portion 53C may be located on the second side y2 in the second direction y with respect to the pad portion 52C. The bonding portion 53C is conductively bonded to the second portion 112. This conductive bonding may be achieved in various ways, such as by using a conductive bonding material or by welding including laser welding.

[0046] The fourth power lead 5D may be located between the second power lead 5B and the third power lead 5C in the third direction x. The fourth power lead 5D includes a fourth power terminal 51D. The fourth power terminal 51D is a portion of the fourth power lead 5D that protrudes from the fifth resin surface 75 toward the first side y1 in the second direction y. The fourth power terminal 51D has a mounting surface 511.

[0047] The fourth power lead 5D may include a pad portion 52D and a bonding portion 53D. The pad portion 52D is located on a second side y2 in the second direction y with respect to the fourth power terminal 51D and is covered with the sealing resin 7. The pad portion 52D may be located on a second side z2 in the first direction z with respect to the support substrate 1. The pad portion 52D may be spaced apart from the support substrate 1 as viewed in the first direction z. The bonding portion 53D may be located on the second side y2 in the second direction y with respect to the pad portion 52D. The bonding portion 53D is conductively bonded to the third portion 113. This conductive bonding may be achieved in various ways, such as by using a conductive bonding material or by welding including laser welding.

[0048] The fifth power lead 5E may be located between the second power lead 5B and the fourth power lead 5D in the third direction x. The fifth power lead 5E includes a fifth power terminal 51E. The fifth power terminal 51E is a portion of the fifth power lead 5E that protrudes from the fifth resin surface 75 toward the first side y1 in the second direction y. The fifth power terminal 51E has a mounting surface 511.

[0049] The fifth power lead 5E may include a pad portion 52E and a bonding portion 53E. The pad portion 52E is located on a second side y2 in the second direction y with respect to the fifth power terminal 51E and is covered with the sealing resin 7. The pad portion 52E may be located on a second side z2 in the first direction z with respect to the support substrate 1. The pad portion 52E may be spaced apart from the support substrate 1 as viewed in the first direction z. The bonding portion 53E may be located on the second side y2 in the second direction y with respect to the pad portion 52E. The bonding portion 53E is conductively bonded to the fourth portion 114. This conductive bonding may be achieved in various ways, such as by using a conductive bonding material or by welding including laser welding.

[0050] The first control lead 6A, the second control lead 6B, the third control lead 6C, the fourth control lead 6D, the fifth control lead 6E, the sixth control lead 6F, the seventh control lead 6G, the eighth control lead 6H, the ninth control lead 6J, the tenth control lead 6K, the eleventh control lead 6L, the twelfth control lead 6M, the thirteenth control lead 6P, and the fourteenth control lead 6Q form a transmission path of a control signal for controlling one or more switching elements 2. The first control lead 6A, the second control lead 6B, the third control lead 6C, the fourth control lead 6D, the fifth control lead 6E, the sixth control lead 6F, the seventh control lead 6G, the eighth control lead 6H, the ninth control lead 6J, the tenth control lead 6K, the eleventh control lead 6L, the twelfth control lead 6M, the thirteenth control lead 6P, and the fourteenth control lead 6Q are spaced apart from one another in the third direction x.

[0051] In the illustrated example, the first recess 772 may be located between the first power lead 5A and the third power lead 5C. The first recess 772 may be located between the third power lead 5C and the fourth power lead 5D. The first recess 772 may be located between the fourth power lead 5D and the fifth power lead 5E. The first recess 772 may be located between the fifth power lead 5E and the second power lead 5B.

[0052] The first control lead 6A includes a first control terminal 61A. The first control terminal 61A is a portion of the first control lead 6A that protrudes from the sixth resin surface 76 toward the second side y2 in the second direction y. The first control terminal 61A has a mounting surface 611. The mounting surface 611 is a surface that faces the second side z2 in the first direction z and is a surface that is conductively joined to the mounting substrate 91 when the semiconductor device A1 is mounted on, for example, the mounting substrate 91. The position of the mounting surface 611 in the first direction z may be the same as that of the second resin surface 72, or may be closer to the second side z2 than the second resin surface 72.

[0053] The first control lead 6A may include a pad portion 62A. The pad portion 62A is located on a first side y1 in the second direction y with respect to the first control terminal 61A, and is covered with a sealing resin 7. The pad portion 62A may be located on a second side z2 in the first direction z with respect to the support substrate 1. The pad portion 62A may be spaced apart from the support substrate 1 when viewed in the first direction z.

[0054] The second control lead 6B may be located on the second side x2 relative to the first control lead 6A in the third direction x. The second control lead 6B includes a second control terminal 61B. The second control terminal 61B is a portion of the second control lead 6B that protrudes from the sixth resin surface 76 to the second side y2 in the second direction y. The second control terminal 61B has a mounting surface 611.

[0055] The second control lead 6B may include a pad portion 62B. The pad portion 62B is located on a first side y1 in the second direction y with respect to the second control terminal 61B, and is covered with the sealing resin 7. The pad portion 62B may be located on a second side z2 in the first direction z with respect to the support substrate 1. The pad portion 62B may be spaced apart from the support substrate 1 when viewed in the first direction z.

[0056] The third control lead 6C may be located on the second side x2 relative to the second control lead 6B in the third direction x. The third control lead 6C includes a third control terminal 61C. The third control terminal 61C is a portion of the third control lead 6C that protrudes from the sixth resin surface 76 to the second side y2 in the second direction y. The third control terminal 61C has a mounting surface 611.

[0057] The third control lead 6C may include a pad portion 62C. The pad portion 62C is located on a first side y1 in the second direction y with respect to the third control terminal 61C, and is covered with the sealing resin 7. The pad portion 62C may be located on a second side z2 in the first direction z with respect to the support substrate 1. The pad portion 62C may be spaced apart from the support substrate 1 when viewed in the first direction z.

[0058] The fourth control lead 6D may be located on the second side x2 relative to the third control lead 6C in the third direction x. The fourth control lead 6D includes a fourth control terminal 61D. The fourth control terminal 61D is a portion of the fourth control lead 6D that protrudes from the sixth resin surface 76 to the second side y2 in the second direction y. The fourth control terminal 61D has a mounting surface 611.

[0059] The fourth control lead 6D may include a pad portion 62D. The pad portion 62D is located on a first side y1 in the second direction y with respect to the fourth control terminal 61D, and is covered with the sealing resin 7. The pad portion 62D may be located on a second side z2 in the first direction z with respect to the support substrate 1. The pad portion 62D may be spaced apart from the support substrate 1 when viewed in the first direction z.

[0060] The fifth control lead 6E may be located on the second side x2 relative to the fourth control lead 6D in the third direction x. The fifth control lead 6E includes a fifth control terminal 61E. The fifth control terminal 61E is a portion of the fifth control lead 6E that protrudes from the sixth resin surface 76 to the second side y2 in the second direction y. The fifth control terminal 61E has a mounting surface 611.

[0061] The fifth control lead 6E may include a pad portion 62E. The pad portion 62E is located on a first side y1 in the second direction y with respect to the fifth control terminal 61E, and is covered with the sealing resin 7. The pad portion 62E may be located on a second side z2 in the first direction z with respect to the support substrate 1. The pad portion 62E may be spaced apart from the support substrate 1 when viewed in the first direction z.

[0062] The sixth control lead 6F may be located on the second side x2 relative to the fifth control lead 6E in the third direction x. The sixth control lead 6F includes a sixth control terminal 61F. The sixth control terminal 61F is a portion of the sixth control lead 6F that protrudes from the sixth resin surface 76 to the second side y2 in the second direction y. The sixth control terminal 61F has a mounting surface 611.

[0063] The sixth control lead 6F may include a pad portion 62F. The pad portion 62F is located on a first side y1 in the second direction y with respect to the sixth control terminal 61F, and is covered with the sealing resin 7. The pad portion 62F may be located on a second side z2 in the first direction z with respect to the support substrate 1. The pad portion 62F may be spaced apart from the support substrate 1 when viewed in the first direction z.

[0064] The seventh control lead 6G may be located on the x1 side relative to the first control lead 6A in the third direction x. The seventh control lead 6G includes a seventh control terminal 61G. The seventh control terminal 61G is a portion of the seventh control lead 6G that protrudes from the sixth resin surface 76 to the second side y2 in the second direction y. The seventh control terminal 61G has a mounting surface 611.

[0065] The seventh control lead 6G may include a pad portion 62G. The pad portion 62G is located on a first side y1 in the second direction y with respect to the seventh control terminal 61G, and is covered with the sealing resin 7. The pad portion 62G may be located on a second side z2 in the first direction z with respect to the support substrate 1. The pad portion 62G may be spaced apart from the support substrate 1 when viewed in the first direction z.

[0066] The eighth control lead 6H may be located between the first control lead 6A and the second control lead 6B in the third direction x. The eighth control lead 6H includes an eighth control terminal 61H. The eighth control terminal 61H is a portion of the eighth control lead 6H that protrudes from the sixth resin surface 76 to the second side y2 in the second direction y. The eighth control terminal 61H has a mounting surface 611.

[0067] The eighth control lead 6H may include a pad portion 62H. The pad portion 62H is located on a first side y1 in the second direction y with respect to the eighth control terminal 61H, and is covered with the sealing resin 7. The pad portion 62H may be located on a second side z2 in the first direction z with respect to the support substrate 1. The pad portion 62H may be spaced apart from the support substrate 1 when viewed in the first direction z.

[0068] The ninth control lead 6J may be located between the second control lead 6B and the third control lead 6C in the third direction x. The ninth control lead 6J includes a ninth control terminal 61J. The ninth control terminal 61J is a portion of the ninth control lead 6J that protrudes from the sixth resin surface 76 to the second side y2 in the second direction y. The ninth control terminal 61J has a mounting surface 611.

[0069] The ninth control lead 6J may include a pad portion 62J. The pad portion 62J is located on a first side y1 in the second direction y with respect to the ninth control terminal 61J, and is covered with the sealing resin 7. The pad portion 62J may be located on a second side z2 in the first direction z with respect to the support substrate 1. The pad portion 62J may be spaced apart from the support substrate 1 when viewed in the first direction z.

[0070] The tenth control lead 6K may be located between the third control lead 6C and the fourth control lead 6D in the third direction x. The tenth control lead 6K includes a tenth control terminal 61K. The tenth control terminal 61K is a portion of the tenth control lead 6K that protrudes from the sixth resin surface 76 to the second side y2 in the second direction y. The tenth control terminal 61K has a mounting surface 611.

[0071] The tenth control lead 6K may include a pad portion 62K. The pad portion 62K is located on a first side y1 in the second direction y with respect to the tenth control terminal 61K, and is covered with the sealing resin 7. The pad portion 62K may be located on a second side z2 in the first direction z with respect to the support substrate 1. The pad portion 62K may be spaced apart from the support substrate 1 when viewed in the first direction z.

[0072] The eleventh control lead 6L may be located between the fourth control lead 6D and the fifth control lead 6E in the third direction x. The eleventh control lead 6L includes an eleventh control terminal 61L. The eleventh control terminal 61L is a portion of the eleventh control lead 6L that protrudes from the sixth resin surface 76 to the second side y2 in the second direction y. The eleventh control terminal 61L has a mounting surface 611.

[0073] The eleventh control lead 6L may include a pad portion 62L. The pad portion 62L is located on a first side y1 in the second direction y with respect to the eleventh control terminal 61L, and is covered with the sealing resin 7. The pad portion 62L may be located on a second side z2 in the first direction z with respect to the support substrate 1. The pad portion 62L may be spaced apart from the support substrate 1 when viewed in the first direction z.

[0074] The twelfth control lead 6M may be located between the fifth control lead 6E and the sixth control lead 6F in the third direction x. The twelfth control lead 6M includes a twelfth control terminal 61M. The twelfth control terminal 61M is a portion of the twelfth control lead 6M that protrudes from the sixth resin surface 76 to the second side y2 in the second direction y. The twelfth control terminal 61M has a mounting surface 611.

[0075] The twelfth control lead 6M may include a pad portion 62M. The pad portion 62M is located on a first side y1 in the second direction y with respect to the twelfth control terminal 61M, and is covered with the sealing resin 7. The pad portion 62M may be located on a second side z2 in the first direction z with respect to the support substrate 1. The pad portion 62M may be spaced apart from the support substrate 1 when viewed in the first direction z.

[0076] The thirteenth control lead 6P may be located on the second side x2 relative to the sixth control lead 6F in the third direction x. The thirteenth control lead 6P includes a thirteenth control terminal 61P. The thirteenth control terminal 61P is a portion of the thirteenth control lead 6P that protrudes from the sixth resin surface 76 to the second side y2 in the second direction y. The thirteenth control terminal 61P has a mounting surface 611.

[0077] The thirteenth control lead 6P may include a pad portion 62P. The pad portion 62P is located on a first side y1 in the second direction y with respect to the thirteenth control terminal 61P, and is covered with the sealing resin 7. The pad portion 62P may be located on a second side z2 in the first direction z with respect to the support substrate 1. The pad portion 62P may be spaced apart from the support substrate 1 when viewed in the first direction z.

[0078] The fourteenth control lead 6Q may be located between the sixth control lead 6F and the thirteenth control lead 6P in the third direction x. The fourteenth control lead 6Q includes a fourteenth control terminal 61Q. The fourteenth control terminal 61Q is a portion of the fourteenth control lead 6Q that protrudes from the sixth resin surface 76 to the second side y2 in the second direction y. The fourteenth control terminal 61Q has a mounting surface 611.

[0079] The fourteenth control lead 6Q may include a pad portion 62Q. The pad portion 62Q is located on a first side y1 in the second direction y with respect to the fourteenth control terminal 61Q, and is covered with the sealing resin 7. The pad portion 62Q may be located on a second side z2 in the first direction z with respect to the support substrate 1. The pad portion 62Q may be spaced apart from the support substrate 1 when viewed in the first direction z.

[0080] In FIG. 7, the hatched areas consisting of a plurality of discrete points may be plated with silver, for example.

[0081] In the illustrated example, the second recess 773 may be located between the first control lead 6A and the eighth control lead 6H. The second recess 773 may be located between the second control lead 6B and the ninth control lead 6J. The second recess 773 may be located between the third control lead 6C and the tenth control lead 6K. The second recess 773 may be located between the sixth control lead 6F and the fourteenth control lead 6Q.

[0082] The first power terminal 51A, the second power terminal 51B, the third power terminal 51C, the fourth power terminal 51D, and the fifth power terminal 51E include long terminals and short terminals of the present disclosure. In the illustrated example, the third power terminal 51C and the fifth power terminal 51E correspond to long terminals, and the first power terminal 51A, the second power terminal 51B, and the fourth power terminal 51D correspond to short terminals. The first auxiliary terminal 59A may be an example of a short terminal.

[0083] As shown in FIG. 4 , the protrusion length Lp1 of the third power terminal 51C and the fifth power terminal 51E, which are long terminals, is longer than the protrusion length Lp2 of the first power terminal 51A, the second power terminal 51B, and the fourth power terminal 51D, which are short terminals. The specific lengths of the protrusion length Lp1 and the protrusion length Lp2 are not limited. An example of the numerical value of the protrusion length Lp1 may be, for example, 2 mm or more and 16 mm or less. An example of the numerical value of the protrusion length Lp2 may be, for example, 1 mm or more and 15 mm or less. The protrusion length Lp1 may be greater than 1 time and less than 5 times the protrusion length Lp2.

[0084] The protrusion lengths of the third power terminal 51C and the fifth power terminal 51E may be the same or different from each other. The protrusion lengths of the first power terminal 51A, the second power terminal 51B, and the fourth power terminal 51D may be the same or different from each other.

[0085] The first control terminal 61A, the second control terminal 61B, the third control terminal 61C, the fourth control terminal 61D, the fifth control terminal 61E, the sixth control terminal 61F, the seventh control terminal 61G, the eighth control terminal 61H, the ninth control terminal 61J, the tenth control terminal 61K, the eleventh control terminal 61L, the twelfth control terminal 61M, the thirteenth control terminal 61P and the fourteenth control terminal 61Q include long terminals and short terminals of the present disclosure. In the illustrated example, the first control terminal 61A, the second control terminal 61B, the third control terminal 61C, the fourth control terminal 61D, the fifth control terminal 61E, the sixth control terminal 61F and the thirteenth control terminal 61P correspond to the long terminals, and the seventh control terminal 61G, the eighth control terminal 61H, the ninth control terminal 61J, the tenth control terminal 61K, the eleventh control terminal 61L, the twelfth control terminal 61M and the fourteenth control terminal 61Q correspond to the short terminals.

[0086] The protrusion length Lc1 of the long terminals, i.e., the first control terminal 61A, the second control terminal 61B, the third control terminal 61C, the fourth control terminal 61D, the fifth control terminal 61E, the sixth control terminal 61F, and the thirteenth control terminal 61P, is longer than the protrusion length Lp2 of the short terminals, i.e., the seventh control terminal 61G, the eighth control terminal 61H, the ninth control terminal 61J, the tenth control terminal 61K, the eleventh control terminal 61L, the twelfth control terminal 61M, and the fourteenth control terminal 61Q. The specific lengths of the protrusion length Lc1 and the protrusion length Lc2 are not limited. An example of the numerical value of the protrusion length Lc1 may be, for example, 2 mm or more and 16 mm or less. An example of the numerical value of the protrusion length Lpc may be, for example, 1 mm or more and 15 mm or less. The protrusion length Lc1 may be more than 1 time and not more than 5 times the protrusion length Lc2.

[0087] The protrusion lengths of the first control terminal 61A, the second control terminal 61B, the third control terminal 61C, the fourth control terminal 61D, the fifth control terminal 61E, the sixth control terminal 61F, and the thirteenth control terminal 61P may be the same or different from one another. The protrusion lengths of the seventh control terminal 61G, the eighth control terminal 61H, the ninth control terminal 61J, the tenth control terminal 61K, the eleventh control terminal 61L, the twelfth control terminal 61M, and the fourteenth control terminal 61Q may be the same or different from one another.

[0088] In the illustrated example, the long terminals and the short terminals may be positioned adjacent to each other in the third direction x. That is, one long terminal may be positioned between two short terminals. Also, one short terminal may be positioned between two long terminals.

[0089] 7 , the second electrode 22 of the first switching element 2A may be conductively connected to the pad portion 52C by a first conductive connection member 81. The second electrode 22 of the second switching element 2B may be conductively connected to the pad portion 52D by a first conductive connection member 81. The second electrode 22 of the third switching element 2C may be conductively connected to the pad portion 52E by a first conductive connection member 81. The first conductive connection member 81 includes a metal such as aluminum (Al) or copper (Cu). Note that the material, shape, number, etc. of the first conductive connection members 81 are not limited in any way.

[0090] The second electrode 22 of the fourth switching element 2D may be conductively connected to the pad portion 52B by a first conductive connection member 81. The second electrode 22 of the fifth switching element 2E may be conductively connected to the pad portion 52B by a first conductive connection member 81. The second electrode 22 of the sixth switching element 2F may be conductively connected to the pad portion 52B by a first conductive connection member 81.

[0091] The third electrode 23 of the first switching element 2A may be conductively connected to the pad portion 62A by a second conductive connection member 82. The third electrode 23 of the second switching element 2B may be conductively connected to the pad portion 62B by a second conductive connection member 82. The third electrode 23 of the third switching element 2C may be conductively connected to the pad portion 62C by a second conductive connection member 82. The third electrode 23 of the fourth switching element 2D may be conductively connected to the pad portion 62D by a second conductive connection member 82. The third electrode 23 of the fifth switching element 2E may be conductively connected to the pad portion 62E by a second conductive connection member 82. The third electrode 23 of the sixth switching element 2F may be conductively connected to the pad portion 62E by a second conductive connection member 82. The second conductive connection member 82 may include a metal such as gold (Au), silver (Ag), copper (Cu), or aluminum (Al). There are no limitations on the material, shape, number, etc. of the second conductive connection members 82 .

[0092] The second electrode 22 of the first switching element 2A may be conductively connected to the pad portion 62G by a second conductive connection member 82. The second electrode 22 of the second switching element 2B may be conductively connected to the pad portion 62H by a second conductive connection member 82. The second electrode 22 of the third switching element 2C may be conductively connected to the pad portion 62J by a second conductive connection member 82. The second electrode 22 of the fourth switching element 2D may be conductively connected to the pad portion 62K by a second conductive connection member 82. The second electrode 22 of the fifth switching element 2E may be conductively connected to the pad portion 62L by a second conductive connection member 82. The second electrode 22 of the sixth switching element 2F may be conductively connected to the pad portion 62M by a second conductive connection member 82.

[0093] Of the two portions of the first metal layer 11 that are conductively connected to the thermistor 87, one portion may be conductively connected to the pad portion 62P by the second conductive connection member 82, and the other portion may be conductively connected to the pad portion 62Q by the second conductive connection member 82.

[0094] As shown in FIG. 15 , the semiconductor device A1 may include, for example, a half-bridge switching circuit. The first switching element 2A, the second switching element 2B, and the third switching element 2C may form an upper arm circuit, and the fourth switching element 2D, the fifth switching element 2E, and the sixth switching element 2F may form a lower arm circuit. In the upper arm circuit, the first switching element 2A, the second switching element 2B, and the third switching element 2C may be connected in parallel to each other. In the lower arm circuit, the fourth switching element 2D, the fifth switching element 2E, and the sixth switching element 2F may be connected in parallel to each other. The first switching element 2A, the second switching element 2B, and the third switching element 2C may be connected in series with the corresponding fourth switching element 2D, the fifth switching element 2E, and the sixth switching element 2F to form a bridge layer. A DC voltage to be converted may be input to the first power terminal 51A and the second power terminal 51B. The first power terminal 51A may be a positive terminal (P terminal), and the second power terminal 51B may be a negative terminal (N terminal). AC voltages converted by the first to sixth switching elements 2A to 2F may be output from the third power terminal 51C, the fourth power terminal 51D, and the fifth power terminal 51E.

[0095] The first control terminal 61A may be a gate terminal of the first switching element 2A, and the seventh control terminal 61G may be a source sense terminal of the first switching element 2A. The second control terminal 61B may be a gate terminal of the second switching element 2B, and the eighth control terminal 61H may be a source sense terminal of the second switching element 2B. The third control terminal 61C may be a gate terminal of the third switching element 2C, and the ninth control terminal 61J may be a source sense terminal of the third switching element 2C.

[0096] The fourth control terminal 61D may be a gate terminal of the fourth switching element 2D, and the tenth control terminal 61K may be a source sense terminal of the fourth switching element 2D. The fifth control terminal 61E may be a gate terminal of the fifth switching element 2E, and the eleventh control terminal 61L may be a source sense terminal of the fifth switching element 2E. The sixth control terminal 61F may be a gate terminal of the sixth switching element 2F, and the twelfth control terminal 61M may be a source sense terminal of the sixth switching element 2F.

[0097] The thirteenth control terminal 61P and the fourteenth control terminal 61Q may be terminals for detecting temperature using a thermistor 87.

[0098] Next, the operation of the semiconductor device A1 will be described.

[0099] The mounting surface 511 and the mounting surface 611 are surfaces facing the first side z1 in the first direction z. As shown in FIGS. 10 to 14 , when the semiconductor device A1 is mounted on a mounting substrate 91, so-called surface mounting using the mounting surface 511 and the mounting surface 611 is possible. This eliminates the need to insert the first power terminal 51A, the first control terminal 61A, and the like into through holes in the mounting substrate 91. This improves the efficiency of the mounting operation.

[0100] The semiconductor device A1 has long terminals and short terminals. Of the multiple mounting surfaces 511, the mounting surfaces 511 of the long terminals and the mounting surfaces 511 of the short terminals are spaced apart in the second direction y. This allows for improved mounting strength when the semiconductor device A1 is surface-mounted on a mounting substrate 91 or the like. Of the multiple mounting surfaces 611, the mounting surfaces 611 of the long terminals and the mounting surfaces 611 of the short terminals are spaced apart in the second direction y. This allows for improved mounting strength when the semiconductor device A1 is surface-mounted on a mounting substrate 91 or the like.

[0101] 6 and 7, the plurality of long terminals and the plurality of short terminals are positioned alternately in the third direction x, which can further increase the mounting strength of the semiconductor device A1.

[0102] 16 to 28 show modified examples and other embodiments of the present disclosure. In these figures, elements that are the same as or similar to those in the above-described embodiment are given the same reference numerals. Furthermore, the configurations of the various parts in each modified example and each embodiment can be combined with each other as appropriate within the scope of not causing technical contradictions.

[0103] The semiconductor device according to the present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the semiconductor device according to the present disclosure can be freely modified in various ways.

[0104] First Modification of First Embodiment: Figure 16 shows a first modification of the semiconductor device A1. In the semiconductor device A11 of this modification, the first portion 111, the second portion 112, the third portion 113, and the fourth portion 114 may be provided with unevenness. The unevenness may be formed by subjecting the surfaces of the first portion 111, the second portion 112, the third portion 113, and the fourth portion 114 to laser processing, etching, or the like. The unevenness may not be provided in the regions of the first portion 111, the second portion 112, the third portion 113, and the fourth portion 114 where the first switching element 2A to the sixth switching element 2F are mounted.

[0105] This modification can improve the efficiency of the mounting work. According to this modification, the first portion 111, the second portion 112, the third portion 113, and the fourth portion 114 are provided with unevenness, which can suppress peeling between the first portion 111, the second portion 112, the third portion 113, and the fourth portion 114 and the sealing resin 7.

[0106] 17 shows a second modification of the semiconductor device A1. In a semiconductor device A12 of this modification, the sealing resin 7 may have a first engagement portion 781. The first engagement portion 781 may, for example, engage with a third engagement portion 913 provided on the mounting substrate 91 to restrict movement of the semiconductor device A12 relative to the mounting substrate 91 in a direction intersecting the first direction z. In this example, the first engagement portion 781 is a recess recessed from the second resin surface 72 toward the first side z1 in the first direction z.

[0107] 18 shows a third modification of the semiconductor device A1. In the semiconductor device A13 of this modification, the first engaging portion 781 is a convex portion that protrudes from the second resin surface 72 toward the second side z2 in the first direction z.

[0108] This modification can improve the efficiency of the mounting work. According to this modification, when the semiconductor devices A12 and A13 are surface-mounted on the mounting substrate 91, it is possible to reduce unintentional movement of the semiconductor devices A12 and A13 in a direction intersecting with the first direction z after the semiconductor devices A12 and A13 are placed on the mounting substrate 91 and before the surface mounting is completed via a reflow furnace.

[0109] 19 shows a fourth modification of the semiconductor device A1. In the semiconductor device A14 of this modification, the sealing resin 7 may have a second engaging portion 782. The second engaging portion 782 is used to generate a force that urges the semiconductor device A14 toward the mounting substrate 91 in the first direction z by engaging with, for example, a fourth engaging portion 914 provided on the mounting substrate 91.

[0110] This modification can improve the efficiency of the mounting operation. According to this modification, when surface-mounting the semiconductor device A14 on the mounting substrate 91, a force can be applied to press the semiconductor device A14 against the mounting substrate 91 after the semiconductor device A14 is placed on the mounting substrate 91 and before the surface-mounting is completed via a reflow oven. This reduces unintended movement of the semiconductor device A14 in a direction intersecting the first direction z. Before the semiconductor device A14 is placed on the mounting substrate 91, the mounting surfaces 511 and 611 may be configured to be located on the second side z2 in the first direction z relative to the second resin surface 72. In this case, the engagement between the second engaging portion 782 and the fourth engaging portion 914 causes the multiple power terminals 51 and the multiple control terminals 61 to bend slightly. This prevents any of the multiple power terminals 51 and the multiple control terminals 61 from moving away from the mounting substrate 91 toward the first side z1 in the first direction z.

[0111] Fifth Modification of First Embodiment: Figure 20 shows a fifth modification of the semiconductor device A1. In a semiconductor device A15 of this modification, one or more leads (in the illustrated example, the first power lead 5A) can have an elastically deformable portion 512. The elastically deformable portion 512 is a portion that causes elastic deformation in the first power terminal 51A in the second direction y. In the illustrated example, the elastically deformable portion 512 is provided by partially bending the first power terminal 51A.

[0112] 21 shows a sixth modification of the semiconductor device A1. The elastically deformable portion 512 of the semiconductor device A16 of this modification is configured by partially thinning the first power terminal 51A.

[0113] This modification can improve the efficiency of the mounting work. According to this modification, the first power terminal 51A is easily elastically deformed in the second direction y. This makes it possible to reduce the application of excessive force to the solder or the like that electrically connects the mounting surface 511 and the mounting substrate 91 when thermal stress or the like acts on the first power terminal 51A during use of the semiconductor devices A15, A16 after the semiconductor devices A15, A16 are mounted. The elastically deformable portion 512 may be applied to other power terminals 51 and other control terminals 61.

[0114] 22 shows a seventh modification of the semiconductor device A1. In the semiconductor device A17 of this modification, the first power terminal 51A, the fourth power terminal 51D, and the second power terminal 51B individually protrude from a plurality of first recesses 772 toward the first side y1 in the second direction y. The first power terminal 51A, the fourth power terminal 51D, and the second power terminal 51B correspond to the short terminals of the present disclosure.

[0115] The seventh control terminal 61G, the eighth control terminal 61H, the ninth control terminal 61J, the tenth control terminal 61K, the eleventh control terminal 61L, the twelfth control terminal 61M, and the fourteenth control terminal 61Q individually protrude to the second side y2 in the second direction y from the plurality of second recesses 773. The seventh control terminal 61G, the eighth control terminal 61H, the ninth control terminal 61J, the tenth control terminal 61K, the eleventh control terminal 61L, the twelfth control terminal 61M, and the fourteenth control terminal 61Q correspond to the short terminals of the present disclosure.

[0116] This modification can improve the efficiency of the mounting work. According to this modification, the mounting surfaces 511 and 611 of the short terminals can be brought closer to the sealing resin 7 in the second direction y. This makes it possible to shorten the long terminals without changing the distance between the mounting surfaces 511 and 511 of the long terminals. It is possible to shorten the long terminals without changing the distance between the mounting surfaces 611 and 611 of the long terminals. Therefore, the space required for mounting the semiconductor device A17 can be reduced.

[0117] Eighth Modification of First Embodiment: Figure 23 shows an eighth modification of the semiconductor device A1. In a semiconductor device A18 of this modification, the fourth power terminal 51D is bent so that the mounting surface 511 overlaps the sealing resin 7 when viewed in the first direction z. The sealing resin 7 may have an accommodating recess 774. The accommodating recess 774 is recessed from the second resin surface 72 toward the first side z1 in the first direction z and opens in the second direction y. A tip portion of the fourth power terminal 51D, including the mounting surface 511, can be accommodated in the accommodating recess 774. The other short terminals may have a configuration similar to that of the fourth power terminal 51D.

[0118] The eleventh control terminal 61L is bent so that the mounting surface 611 overlaps the sealing resin 7 when viewed in the first direction z. The tip portion of the eleventh control terminal 61L, including the mounting surface 611, can be accommodated in the accommodating recess 774. The other short terminals may have the same configuration as the eleventh control terminal 61L.

[0119] This modification can improve the efficiency of the mounting work. Like the semiconductor device A17, this modification can reduce the space required for mounting the semiconductor device A18.

[0120] 24 to 28 show a semiconductor device according to a second embodiment of the present disclosure. The semiconductor device A2 of this embodiment may include a first control element 3A and a second control element 3B. The semiconductor device A2 may be configured as an IPM (Intelligent Power Module) that controls the drive of an inverter motor, for example.

[0121] The first control element 3A and the second control element 3B may be so-called control-system semiconductor elements. In the present disclosure, the control-system semiconductor elements are elements that perform the function of controlling the operation of the first switching element 2A to the sixth switching element 2F, and may be, for example, driver ICs. In this embodiment, the first control element 3A and the second control element 3B are both driver ICs. Furthermore, the first control element 3A may be a high-voltage side driver IC that handles a relatively high-voltage current, and the second control element 3B may be a low-voltage side driver IC that handles a relatively low-voltage current.

[0122] The support substrate 1 of the semiconductor device A2 may include an insulating layer 10. The exposed surface 1a may be formed by the insulating layer 10.

[0123] The first power lead 5A can include an island portion 54A. The island portion 54A is bonded to the insulating layer 10 via a bonding layer 19. The bonding layer 19 may be, for example, an insulating bonding material or a conductive bonding material. The first electrodes 21 of the first switching element 2A, the second switching element 2B, and the third switching element 2C are conductively bonded to the island portion 54A by the conductive bonding material 29.

[0124] The third power lead 5C may include an island portion 54C. The island portion 54C is bonded to the insulating layer 10 via a bonding layer 19. The first electrode 21 of the fourth switching element 2D is conductively bonded to the island portion 54C with a conductive bonding material 29.

[0125] The fourth power lead 5D can include an island portion 54D. The island portion 54D is bonded to the insulating layer 10 via a bonding layer 19. The first electrode 21 of the fifth switching element 2E is conductively bonded to the island portion 54D with a conductive bonding material 29.

[0126] The fifth power lead 5E may include an island portion 54E. The island portion 54E is bonded to the insulating layer 10 via a bonding layer 19. The first electrode 21 of the sixth switching element 2F is conductively bonded to the island portion 54E with a conductive bonding material 29.

[0127] The island portion 54A, the island portion 54B, the island portion 54C, the island portion 54D, and the island portion 54E may have a plurality of recesses 56. The plurality of recesses 56 can be formed by, for example, laser processing, etching, or the like.

[0128] The semiconductor device A2 may include a first diode 4A, a second diode 4B, a third diode 4C, a fourth diode 4D, a fifth diode 4E, and a sixth diode 4F. The first diode 4A, the second diode 4B, the third diode 4C, the fourth diode 4D, the fifth diode 4E, and the sixth diode 4F may be, for example, fast recovery diodes (FRDs). The first diode 4A, the second diode 4B, the third diode 4C, the fourth diode 4D, the fifth diode 4E, and the sixth diode 4F may have an element body 40, an electrode 41, and an electrode 42.

[0129] The electrodes 41 of the first diode 4A, the second diode 4B, and the third diode 4C can be conductively joined to the island portion 54A by a conductive bonding material 49.

[0130] The electrode 41 of the fourth diode 4D can be conductively joined to the island portion 54C by a conductive bonding material 49. The electrode 41 of the fifth diode 4E can be conductively joined to the island portion 54D by a conductive bonding material 49. The electrode 41 of the sixth diode 4F can be conductively joined to the island portion 54E by a conductive bonding material 49.

[0131] The semiconductor device A2 may include a second power lead 5B1, a second power lead 5B2, and a second power lead 5B3. The second power lead 5B1 may include a second power terminal 51B1. The second power lead 5B2 may include a second power terminal 51B2. The second power lead 5B3 may include a second power terminal 51B3. The second power terminals 51B1, 51B2, and 51B3 protrude from the fifth resin surface 75 to a first side y1 in the second direction y.

[0132] The semiconductor device A2 may include a dummy lead 5X. The dummy lead 5X may have a dummy terminal 51X. The dummy terminal 51X may have a mounting surface 511.

[0133] In this embodiment, the third power terminal 51C, the fifth power terminal 51E, and the second power terminal 51B2 correspond to the long terminals of the present disclosure, and the first power terminal 51A, the fourth power terminal 51D, the second power terminal 51B1, and the second power terminal 51B3 correspond to the short terminals. The dummy terminal 51X may correspond to the long terminal of the present disclosure.

[0134] The second power lead 5B1 may include a pad portion 52B1. The second power lead 5B2 may include a pad portion 52B2. The second power lead 5B3 may include a pad portion 52B3. The pad portions 52B1, 52B2, and 52B3 are covered with the sealing resin 7.

[0135] The second electrode 22 of the first switching element 2A, the electrode 42 of the first diode 4A, and the pad portion 52C may be conductively connected to each other by a first conductive connection member 81. The second electrode 22 of the second switching element 2B, the electrode 42 of the second diode 4B, and the pad portion 52D may be conductively connected to each other by a first conductive connection member 81. The second electrode 22 of the third switching element 2C, the electrode 42 of the third diode 4C, and the pad portion 52E may be conductively connected to each other by a first conductive connection member 81.

[0136] The second electrode 22 of the fourth switching element 2D, the electrode 42 of the fourth diode 4D, and the pad portion 52B1 may be conductively connected to each other by a first conductive connecting member 81. The second electrode 22 of the fifth switching element 2E, the electrode 42 of the fifth diode 4E, and the pad portion 52B2 may be conductively connected to each other by a first conductive connecting member 81. The second electrode 22 of the sixth switching element 2F, the electrode 42 of the sixth diode 4F, and the pad portion 52B3 may be conductively connected to each other by a first conductive connecting member 81.

[0137] The semiconductor device A2 may include a first control lead 6A to a ninth control lead 6J.

[0138] The eighth control lead 6H may include an island portion 64H. The island portion 64H may be bonded to the insulating layer 10 by a bonding layer 19. The first control element 3A may be mounted on the island portion 64H.

[0139] The ninth control lead 6J may include an island portion 64J. The island portion 64J may be bonded to the insulating layer 10 by a bonding layer 19. The second control element 3B may be mounted on the island portion 64J.

[0140] The first control lead 6A, the second control lead 6B, and the third control lead 6C may each include an island portion 64A, an island portion 64B, and an island portion 64C. A diode 88A may be mounted on the island portion 64A. A diode 88B may be mounted on the island portion 64B. A diode 88C may be mounted on the island portion 64C.

[0141] The second control terminal 61B, the fourth control terminal 61D, the sixth control terminal 61F, and the ninth control terminal 61J correspond to the long terminals of the present disclosure, and the first control terminal 61A, the third control terminal 61C, the two fifth control terminals 61E, and the seventh control leads 6G correspond to the short terminals of the present disclosure.

[0142] The second electrodes 22 and the third electrodes 23 of the first switching element 2A, the second switching element 2B, and the third switching element 2C may each be conductively connected to the first control element 3A by a second conductive connecting member 82. The second electrodes 22 and the third electrodes 23 of the fourth switching element 2D, the fifth switching element 2E, and the sixth switching element 2F may each be conductively connected to the second control element 3B by a second conductive connecting member 82.

[0143] The diodes 88A, 88B, and 88C can be conductively connected to the first control element 3A by second conductive connection members 82. The island portions 64A, 64B, and 64C can each be connected to the first control element 3A by second conductive connection members 82.

[0144] The pad portion 62D and the plurality of pad portions 62E can be electrically connected to the first control element 3A by second conductive connection members 82, respectively.

[0145] The plurality of pad portions 62F and the plurality of pad portions 62G can be conductively connected to the second control element 3B by second conductive connection members 82, respectively.

[0146] The sealing resin 7 may have a plurality of second recesses 773. The plurality of second recesses 773 may be located between the first control terminal 61A, the second control terminal 61B, the third control terminal 61C, and the fourth control terminal 61D.

[0147] 28 is an example of a circuit diagram of the semiconductor device A2. DC power is input to the first power terminal 51A and the second power terminals 51B1, 51B2, and 51B3. AC power is output from the third power terminal 51C, the fourth power terminal 51D, and the fifth power terminal 51E. The first control terminal 61A, the second control terminal 61B, the third control terminal 61C, the plurality of fourth control terminals 61D, and the plurality of fifth control terminals 61E are used to input control signals to the first control element 3A, etc. The plurality of sixth control terminals 61F, the plurality of seventh control terminals 61G, and the ninth control terminal 61J are used to input control signals to the second control element 3B, etc.

[0148] According to this embodiment, the efficiency of the mounting work can be improved. As can be understood from this embodiment, the semiconductor device of the present disclosure may have a built-in driver IC or the like for driving and controlling the switching elements.

[0149] Supplementary Note 1. A semiconductor device (A1) comprising: one or more switching elements (2A); a support substrate (1) supporting the one or more switching elements (2A); one or more leads (5A); and a sealing resin (7) covering the one or more switching elements (2A) and portions of the support substrate (1) and the one or more leads (5A), wherein the support substrate (1) has an exposed surface (1a) exposed from the sealing resin (7) on a first side (z1) in a first direction (z) that is the thickness direction of the support substrate (1), and the one or more leads (5A) include terminals (51A) having a mounting surface (511) facing the first side (z1) in the first direction (z). Supplementary Note 2. The semiconductor device (A1) according to Appendix 1, wherein the one or more terminals include a long terminal (51C) and a short terminal (51A) protruding in a second direction (y) intersecting the first direction (z), and the protruding length of the long terminal (51C) from the sealing resin (7) is longer than the protruding length of the short terminal (51A) from the sealing resin (7). Appendix 3. The semiconductor device (A1) according to Appendix 1 or 2, wherein the support substrate (1) includes an insulating layer (10). Appendix 4. The semiconductor device (A1) according to Appendix 3, wherein the support substrate (1) includes a first metal layer (11) located on a second side (z2) in the first direction (z) with respect to the insulating layer (10), and the one or more switching elements (2A) are conductively joined to the first metal layer (11). Appendix 5. The semiconductor device (A1) according to Supplementary Note 4, wherein the support substrate (1) includes a second metal layer (12) located on the first side (z1) in the first direction (z) relative to the insulating layer (10), and the exposed surface (1a) is formed by the second metal layer (12). Supplementary Note 6. The semiconductor device (A2) according to Supplementary Note 3, wherein the exposed surface (1a) is formed by the insulating layer (10). Supplementary Note 7. The semiconductor device (A12) according to any one of Supplements 1 to 6, wherein the sealing resin (7) includes a first engagement portion (781) used for positioning with respect to an object to be mounted in a direction intersecting the first direction (z). Supplementary Note 8. The semiconductor device (A14) according to any one of Supplements 1 to 7, wherein the sealing resin (7) includes a second engagement portion (782) used for generating a force toward an object to be mounted in the first direction (z).Appendix 9. The semiconductor device (A15) according to Appendix 2, wherein the terminal (51A) has an elastically deformable portion (512) that causes elastic deformation in the second direction (y). Appendix 10. The semiconductor device (A1) according to any one of Appendixes 1 to 9, wherein the one or more terminals include a first power terminal (51A) for flowing a current that is a switching target of the one or more switching elements (2A). Appendix 11. The semiconductor device (A1) according to any one of Appendixes 1 to 10, wherein the one or more terminals include a first control terminal (61A) used to control switching of the one or more switching elements (2A). Appendix 12. The semiconductor device (A1) according to Appendix 2, wherein the sealing resin (7) has a first recess (772) recessed in the second direction (y). Appendix 13. The semiconductor device (A17) according to Appendix 12, wherein the short terminal (51A) protrudes from the first recess (772). Appendix 14. The semiconductor device (A18) according to Appendix 2, wherein the short terminal (51D) is bent so that the mounting surface (511) overlaps the sealing resin (7) when viewed in the first direction. Appendix 15. The semiconductor device (A2) according to any one of Appendixes 1 to 14, further comprising one or more control elements (3A) that control switching of the one or more switching elements (2A). Appendix 16. The semiconductor device (A2) according to Appendix 6, wherein the one or more leads (5A) include an island portion (54A) on which the one or more switching elements (2A) are mounted, and the island portion (54A) is bonded to the insulating layer (10). Appendix 17. The semiconductor device (A1) according to Appendix 2, wherein the distance between the mounting surface (511) of the long terminal and the sealing resin (7) in the second direction (y) is greater than 1 time and less than 5 times the distance between the mounting surface (511) of the short terminal and the sealing resin (7) in the second direction (y).

[0150] A1, A11 to A18, A2: semiconductor device 1: supporting substrate 1a: exposed surface 2: switching element 2A to 2F: first to sixth switching elements 3A: first control element 3B: second control element 4A to 4F: first to sixth diodes 5: power lead (lead) 5A: first power lead 5B to 5E: second to fifth power leads 5B1 to 5B3: second power lead 5X: dummy lead 6: control lead 6A to 6H: first to eighth control leads 6J to 6M: ninth to twelfth control leads 6P: thirteenth control lead 6Q: fourteenth control lead 7: sealing resin 10: insulating layer 11: first metal layer 12: second metal layer 19: bonding layer 20: element body 21 to 23: first to third electrodes 29: conductive bonding material 40: Element body 41, 42: Electrodes 49: Conductive bonding material 51: Power terminal 51A to 51E: First power terminal to fifth power terminal 51B1, 51B2, 51B3: Second power terminal 51X: Dummy terminal 52A to 52E, 52B1 to 52B3: Pad portion 53A, 53C, 53D, 53E: Joint portion 54A to 54E: Island portion 56: Recess 59A: First auxiliary terminal 61: Control terminal 61A to 61H: First control terminal to eighth control terminal 61J to 61M: Ninth control terminal to twelfth control terminal 61P: Thirteenth control terminal 61Q: Fourteenth control terminal 62A to 62H, 62J to 62M, 62P, 62Q: Pad portion 64A, 64B, 64C, 64H,64J: Island portion 71-76: First to sixth resin surfaces 81: First conductive connection member 82: Second conductive connection member 87: Thermistor 88A-88C: Diode 91: Mounting board 92: Heat sink 111-114: First to fourth portions 511: Mounting surface 512: Elastically deformable portion 611: Mounting surface 711: Groove portion 771: Fixing recess 772: First recess 773: Second recess 774: Accommodating recess 781: First engaging portion 782: Second engaging portion 911: Through hole 913: Third engaging portion 914: Fourth engaging portion 921: Screw x: Third direction x1: First side x2: Second side y: Second direction y1: First side y2: Second side z: First direction z1: first side z2: second side,

Claims

1. A semiconductor device comprising: one or more switching elements; a support substrate supporting the one or more switching elements; one or more leads; and a sealing resin covering the one or more switching elements and portions of the support substrate and the one or more leads, wherein the support substrate has an exposed surface exposed from the sealing resin on a first side in a first direction which is the thickness direction of the support substrate, and the one or more leads include terminals having a mounting surface facing the first side in the first direction.

2. The semiconductor device according to claim 1, wherein the one or more terminals include a long terminal and a short terminal protruding in a second direction intersecting the first direction, and the protruding length of the long terminal from the sealing resin is longer than the protruding length of the short terminal from the sealing resin.

3. The semiconductor device according to claim 1 or 2, wherein the support substrate includes an insulating layer.

4. The semiconductor device described in claim 3, wherein the support substrate includes a first metal layer located on a second side in the first direction with respect to the insulating layer, and the one or more switching elements are conductively joined to the first metal layer.

5. The semiconductor device according to claim 4, wherein the supporting substrate includes a second metal layer located on the first side in the first direction with respect to the insulating layer, and the exposed surface is constituted by the second metal layer.

6. The semiconductor device according to claim 3, wherein said exposed surface is constituted by said insulating layer.

7. The semiconductor device according to claim 1, wherein the sealing resin includes a first engagement portion used for positioning with an object to be mounted in a direction intersecting the first direction.

8. The semiconductor device according to claim 1, wherein the sealing resin includes a second engaging portion used for generating a force toward an object to be mounted in the first direction.

9. The semiconductor device according to claim 2, wherein said terminal has an elastically deformable portion that causes elastic deformation in said second direction.

10. The semiconductor device according to claim 1, wherein said one or more terminals include a first power terminal for passing a current that is an object of switching of said one or more switching elements.

11. The semiconductor device according to claim 1, wherein the one or more terminals include a first control terminal used for switching control of the one or more switching elements.

12. The semiconductor device according to claim 2, wherein the sealing resin has a first recess recessed in the second direction.

13. The semiconductor device according to claim 12, wherein said short terminal protrudes from said first recess.

14. The semiconductor device according to claim 2, wherein the short terminal is bent so that the mounting surface overlaps the sealing resin when viewed in the first direction.

15. The semiconductor device according to claim 1, further comprising one or more control elements for controlling switching of said one or more switching elements.

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