Embedding method and embedding system

Abstract

The embedding method comprises: preparing a structure in which a plurality of dies are arranged at intervals on a substrate; filling insulating fine particles into a gap between the plurality of dies; and forming an insulating film on the surface of the structure by ALD and embedding the insulating film within the gap. An embedding layer in which the insulating film is filled between the insulating fine particles is thereby formed in the gap.

Description

Embedding method and system

[0001] The present disclosure relates to implantation methods and systems.

[0002] Patent Document 1 discloses a technique for overmolding an electrically insulating material onto a base wafer by, for example, film-assisted molding or compression molding in order to form a sealing structure between the die stacks in an assembly in which multiple die stacks are formed on a base wafer.

[0003] Special table 2014-522115 publication

[0004] The present disclosure provides an embedding method and system that can embed a low-stress film in gaps between multiple dies formed on a substrate at low temperature and in a short time.

[0005] An embedding method according to one aspect of the present disclosure includes preparing a structure having a plurality of dies arranged at intervals on a substrate, filling the gaps between the plurality of dies with insulating particles, depositing an insulating film on the surface of the structure by ALD, and embedding the film in the gaps, thereby forming an embedded layer in the gaps with the film filled between the particles.

[0006] According to the present disclosure, there is provided an embedding method and an embedding system that can embed a low-stress film in gaps between multiple dies formed on a substrate at low temperature and in a short time.

[0007] 1 is a flowchart illustrating a filling method according to an embodiment; FIG. 2 is a cross-sectional view illustrating a process of the filling method according to an embodiment; FIG. 3 is a cross-sectional view illustrating a process of the filling method according to an embodiment; FIG. 4 is a cross-sectional view illustrating a process of the filling method according to an embodiment; ２ This is an SEM photograph showing the state in which (silica) fine particles are dispersed in a chemical solution and embedded in a gap. ２ This figure shows five positions in the depth direction where the ALD film thickness was measured when ALD film formation was performed under three conditions, Cases 1 to 3, after filling with fine particles. ２1 is a diagram showing the relationship between the depth position and the ratio of film thickness to Top at that position when ALD film formation is performed under three conditions of cases 1 to 3 after filling with fine particles. FIG. 2 is a diagram showing the relationship between the gap depth and the ratio of film thickness to Top film thickness when ALD film formation is performed when the fine particle size is 300 nm and when it is 1500 nm. FIG. 3 is a diagram showing the relationship between fine particle size and depth loading, and the relationship between fine particle size and total time for ALD film formation, when an experiment is performed to form an insulating film by ALD after filling a gap with insulating fine particles. FIG. 4 is a diagram conceptually showing the relationship between fine particle size and depth loading, and the relationship between fine particle size and total time for ALD film formation. FIG. 5 is a block diagram showing an example of an embedding system for carrying out an embedding method of an embodiment. FIG. 6 is a cross-sectional view showing an example of an application unit of a fine particle filling device used in the embedding system. FIG. 7 is a longitudinal cross-sectional view showing an example of a film formation device used in the embedding system.

[0008] Hereinafter, the embodiments will be specifically described with reference to the accompanying drawings.

[0009] <Filling Method> FIG. 1 is a flowchart illustrating an embodiment of the filling method, and FIGS. 2A to 2C are cross-sectional views illustrating the steps of the filling method according to the embodiment. As shown in FIG. 1, the filling method according to this embodiment includes steps ST1 to ST5. Step ST1 is a step of preparing a structure in which multiple dies are mounted on a substrate. Step ST2 is a step of cleaning the surface of the structure. Step ST3 is a step of filling gaps between the dies with insulating particles. Step ST4 is a step of drying the structure after filling with the insulating particles. Step ST5 is a step of forming an insulating film on the surface of the substrate by ALD to fill the gaps. Of the above steps, steps ST1, ST3, and ST5 are the main steps. Step ST2 is a step that is performed as needed, and step ST4 is a step that is required when filling gaps with insulating particles dispersed in a solvent.

[0010] In step ST1, as shown in FIG. 2A , a structure 1 is prepared in which a plurality of dies 4 are arranged at intervals on a substrate 2. The substrate 2 is, for example, a carrier substrate such as a carrier wafer. The plurality of dies 4 are mounted on the substrate 2 via an adhesive layer 3 made of, for example, an organic resin called "Glue." Note that, although an example of a carrier substrate such as a carrier wafer is shown as the substrate 2 here, the substrate is not limited to this and may also have electrodes and wiring, and the dies 4 may be directly bonded to the substrate 2 by hybrid bonding or the like.

[0011] The die 4 is an IC chip formed by dicing a semiconductor wafer after semiconductor circuits have been formed, and has a semiconductor substrate 4a and a circuit portion 4b formed on its surface. The die 4 may be a single die or a stack of single dies. The width of the gap 5 between the dies 4 is, for example, about 1 to 100 μm, and the depth of the gap 5 corresponds approximately to the height of the die 4 and may be, for example, in the range of 20 to 100 μm.

[0012] In step ST2, the surface of the structure 1, i.e., the surfaces of the substrate 2 and the die 4, is cleaned. The cleaning process is performed to remove organic components and improve hydrophilicity to improve the packing properties of the fine particles, and can be performed using a chemical solution such as SC1 or SPM. The cleaning process may be a single-wafer spin cleaning process in which the structure 1 is rotated while the chemical solution is supplied to the structure 1, or a batch cleaning process in which multiple structures 1 are immersed in the chemical solution all at once. The cleaning process also includes drying after cleaning.

[0013] In step ST3, as shown in FIG. 2B, insulating particles 6 are filled into the gaps 5 between the dies 4. The insulating particles 6 are not particularly limited as long as they are insulating, and may be inorganic or organic. Examples of the insulating particles 6 include silica (silicon oxide; SiO ２ ) can be suitably used. The insulating fine particles 6 may be silicon nitride (SiN). The insulating fine particles 6 may be spherical. The size (particle diameter) of the insulating fine particles 6 may be in the range of 300 to 1500 nm, as will be described later.

[0014] The state in which the insulating particles 6 are filled into the gap 5 is not particularly limited, but the particles 6 may be dispersed in a chemical solution with good dispersibility. The chemical solution in which the insulating particles 6 are dispersed is not particularly limited as long as it can disperse the particles 6 well, but for example, water, isopropyl alcohol (IPA), and ethylene glycol can be used. These have good dispersibility for the particles 6 and can be removed relatively easily. Water and IPA can be removed by evaporation at a temperature of about 60°C, and ethylene glycol can be removed by a drying process at a temperature of about 100°C for a short time of about 3 minutes. Of these, water is the cheapest. Ethylene glycol also has the advantage of having a high surface tension, which can reduce particle residue on the substrate surface. Figure 3 shows a case in which SiO is used as the insulating particles 6. ２ 3 is a SEM photograph showing the state in which the fine particles are dispersed in a chemical solution and embedded in the gap. ２ It can be seen that the particles are uniformly packed in the gap.

[0015] Methods for filling the insulating particles 6 into the gap 5 include dropping a slurry in which the insulating particles 6 are dispersed in a chemical solution onto the structure 1, immersing the structure 1 in the slurry and then lifting it up, and spin coating by dropping the slurry onto the structure 1 and rotating the substrate 2. Spin coating is preferable from the viewpoint of mass productivity, as it allows the particles 6 to be filled into the gap 5 with less slurry.

[0016] In step ST4, after embedding the insulating particles 6 in step ST3, a drying process is performed to remove the solvent in which the particles 6 are dispersed. The drying process may be performed by only baking, or by baking followed by O ２ Plasma treatment may be performed. ２ The plasma treatment is particularly effective when ethylene glycol is used as a solvent. Ethylene glycol tends to remain in the gap 5 even after baking. ２ It can be completely removed by plasma.

[0017] 2C , in a state in which the gaps 5 are filled with insulating particles 6, an insulating film 7 is formed on the surface of the structure 1 by ALD, and is embedded in the gaps 5 between the dies 4. As a result, the gaps between the insulating particles 6 in the gaps 5 are filled with the insulating film 7, forming a buried layer 8. Since the gaps between the particles 6 are filled with the film 7, the buried layer 8 has high insulating properties and is almost void-free.

[0018] By using ALD to form the insulating film 7, it is possible to form the film at a temperature lower than 280°C, which is the heat resistance temperature of the glue used as the adhesive layer 3. When the die 4 is directly bonded to the substrate 2, there is no problem with the heat resistance of the glue, but low-temperature film formation is also required from the perspective of the heat resistance of the element, and in this case, film formation by ALD is also effective. The lower the temperature during film formation, the better, and a temperature of 100°C or less is preferable.

[0019] The insulating film 7 is formed by ALD by alternately supplying a first reactant and a second reactant to the structure 1 and forming a film by a reaction between them. As a typical example, a first step of supplying a source gas to the structure 1 and causing it to adsorb, and a second step of supplying a reactive gas to the structure 1 and causing it to react with the source gas to form a thin film are repeated to form a film of a predetermined thickness. A purge step for discharging residual gas may be performed between the first and second steps.

[0020] The insulating film 7 is not particularly limited as long as it is insulating, and may be made of the same material as the insulating particles. ２ ALD is suitable for SiO films and SiN films. ２ When forming a film, a Si-containing gas is used as a source gas and an oxygen-containing gas is used as a reactive gas. The oxygen-containing gas may be an oxygen-containing plasma, for example, O ２ In addition, when forming a SiN film by ALD, the film can be formed using a Si-containing gas as a source gas and a nitrogen-containing gas as a reactive gas. The nitrogen-containing gas can be a nitrogen-containing plasma, for example, N ２Plasma deposition is preferred. By using ALD, it is possible to easily form a film at a temperature lower than the heat-resistant temperature of 280°C of Glue. ２ When depositing a silicon dioxide film or a silicon nitride film, film deposition at a temperature of 100° C. or less, or even at room temperature, is possible by selecting the types of source gases, reactive gases, and other conditions.

[0021] The insulating film 7 is made of SiO ２ Examples of combinations of source gases and reactive gases that can form a film include the following: Source gas Reactive gas (Me ２ N) ３ Si-SiH ３ O ３ or O ２ Plasma (Me ２ SiO) ４ O ２ Plasma MeOSi(NCO) ３ H ２ O ２ Si(NCO) ４ H ２ OSi(OEt) ４ O ２ Plasma Si(OMe) ４ H ２ O Si ２ Cl ６ O ３ SiCl ４ H ２ O SiH(NMe ２ ) ３ O ３ or H ２ O or O ２ Plasma SiH ２ (NEt ２ ) ２ O ３ or O ２ Plasma SiH ３ N (iPr) ２ O ３ or O ２Plasma SiH ４ N ２ O plasma or CO ２ plasma

[0022] When a SiN film is used as the insulating film 7, the following can be given as an example of a combination of source gas and reactive gas: Source gas Reactive gas N(Si ２ H ５ ) ３ N ２ Plasma N(SiH ３ ) ３ N ２ Plasma or NH ３ Plasma Si(SiH ３ ) ４ N ２ Plasma SiH(NMe ２ ) ３ N ２ Plasma SiH ２ (NEt ２ ) ２ N ２ Plasma SiH ４ N ２ Plasma SiHMe ３ NH ３ Plasma Si ２ Cl ６ NH ３

[0023] The insulating film 7 filled in the gap 5 between the dies 4 by ALD in step ST5 is preferably a highly uniform film with small depth loading. High film uniformity can reduce film stress. Depth loading refers to a phenomenon in which the amount of film deposition below the top of the gap (e.g., the bottom) is smaller than the amount of film deposition at the top.

[0024] For example, the reactive gas during ALD, such as O ２ Plasma (O ２The diffusion of reactive gases (radicals) affects the depth loading. In other words, if the diffusibility of the reactive gas is improved, the film formation reaction progresses to the bottom of the gap 5, and the depth loading is reduced.

[0025] The diffusibility of the reactive gas can be improved by increasing the supply time of the reactive gas. An experiment that confirmed this will be described below.

[0026] In this experiment, a 45 μm deep gap was filled with SiO particles having a particle size of 300 nm. ２ After filling with fine particles, SiO ２ ALD was performed using diisopropylaminosilane (DIPAS (SiH ３ N (iPr) ２ ) was used with a supply rate of 250 sccm, and O was used as the reaction gas. ２ Plasma was used and the temperature was 100° C. or less under three conditions, Cases 1 to 3. In Case 1, the pressure was 2 Torr, the raw material gas supply time was 4 sec, and O ２ The plasma supply time was 30 seconds. In case 2, the pressure was increased to 6 Torr, but the other conditions were the same as in case 1. In case 3, O ２ The plasma supply time was set to 120 seconds, four times longer than in Case 1, but the other conditions were the same as in Case 1.

[0027] The ALD film thickness was measured at five depth-wise locations shown in FIG. 4 : Position A: Top, Position B: Top-Middle, Position C: Middle, Position D: Middle-Bottom, and Position E: Bottom. FIG. 5 shows the relationship between the depth position of the gap and the ratio of the film thickness to the top film thickness. As shown in FIG. 5 , in Case 1, the ratio of the film thickness to the top film thickness at the top-middle position (position B), which is about 10 μm deep, has already dropped to about 20%, indicating significant depth loading. In Case 2, it can be seen that there is almost no improvement in depth loading. On the other hand, in Case 3, the ratio of the film thickness to the top film thickness at the top-middle position (position B) is 90% or more, indicating an improvement in depth loading.

[0028] The reason why depth loading is not improved in Case 2 is that the concentration gradient of the source gas becomes high and the diffusion rate becomes fast due to the increase in pressure, but O ２ Plasma (O ２ On the other hand, the diffusion of the reactive gas O ２ When plasma is supplied, the automatic pressure control valve (APC valve) is generally opened to discharge by-products, and the pressure is basically low, so the concentration gradient is low. ２ Plasma (O ２ By extending the supply time of O ２ Plasma (O ２ It is believed that the diffusion of radicals progressed and depth loading was improved.

[0029] However, as shown in FIG. 5, there is a limit to the effect of improving depth loading by adjusting the reaction gas supply time.

[0030] An effective method for promoting the diffusion of the reactive gas during ALD film formation is to increase the size (particle diameter) of the insulating fine particles 6. That is, by increasing the size of the insulating fine particles 6, the gaps between the fine particles become larger, improving the diffusibility of the reactive gas and making it easier for the film formation reaction to occur all the way to the bottom of the gap.

[0031] 6 shows the relationship between the gap depth and the ratio of the film thickness to the top film thickness when ALD film formation is performed under the conditions of Case 3 above, with the insulating particle size being 300 nm and 1500 nm. As shown in this figure, when the particle size is 300 nm, almost no film is formed at the bottom, whereas by setting the particle size to 1500 nm, a film thickness equivalent to that at the top is obtained at the bottom, and depth loading is approximately zero. That is, when the size (particle diameter) of the insulating particle 6 is small, the gaps between the particles are small and the reactive gas does not easily diffuse, so the top is quickly blocked and depth loading increases. However, when the size of the insulating particle 6 is large, the reactive gas diffuses well and depth loading decreases.

[0032] When ALD film formation is performed under the conditions of Case 3 described above, the relationship between the size of the insulating particles 6 and depth loading (the ratio of the amount of film formed at the bottom to the amount of film formed at the top) is as shown in FIG. 7 . That is, when the size of the insulating particles 6 becomes larger than 300 nm, depth loading decreases rapidly, and when it exceeds 500 nm, it tends to saturate. On the other hand, as shown in FIG. 7 , the total time for ALD film formation increases as the size of the insulating particles 6 becomes larger. This is because the gaps between the particles increase.

[0033] That is, the relationship between the particle size and the depth loading, and the relationship between the particle size and the total time for ALD film formation are conceptually as shown in FIG. 8, and it can be seen from this figure that there is an optimal particle size that provides small depth loading and a short total time for ALD film formation.

[0034] Conventionally, as in Patent Document 1, a technique has been adopted in which the gap between dies is filled using a mold, but this requires baking at a temperature higher than the heat resistance temperature of the glue, which may have a negative impact on the device. There is also the problem of large stress causing distortion in the substrate. Gaps are also filled using PE-CVD, but using thin-film formation techniques such as CVD alone requires a significant amount of time to fill deep gaps of 20 to 100 μm. Another problem is that the filled film also places a large amount of stress on the substrate, which again causes distortion.

[0035] In contrast, according to this embodiment, the insulating film 7 is formed by ALD after filling the gap 5 between the dies 4 with insulating particles 6. This allows for low-temperature processing and allows for filling in a short time. That is, when filling the gap 5 with the insulating particles 6, baking at a high temperature like in a mold is not required. Even if the insulating particles 6 are dispersed in a chemical solution and filled, heating at 100°C to remove the chemical solution is sufficient. Furthermore, the subsequent formation of the insulating film 7 is also performed by ALD, so it can be performed at a low temperature. Furthermore, by performing film formation by ALD after filling the gap 5 with the insulating particles 6, the filling time can be significantly reduced compared to when ALD is performed from the beginning. Furthermore, by employing a technique of forming the insulating film 7 by ALD after filling the gap with the insulating particles 6, it is possible to achieve both ALD time and film uniformity by adjusting the particle size, and film stress can also be reduced.

[0036] <Embedding System> Next, an example of an embedding system for implementing the embedding method of the embodiment will be described. Fig. 9 is a block diagram showing an example of the embedding system.

[0037] As shown in FIG. 9, the embedding system 100 includes a particulate filling device 200 , a film forming device 300 , a conveying device 400 , and a control unit 500 .

[0038] 10 is a cross-sectional view showing an example of a coating unit 220 of a particle filling device 200. In the particle filling device 200, the coating unit 220 coats a surface of a structure 1 configured by mounting a plurality of dies on a substrate with a slurry in which insulating particles are dispersed in a chemical solution, and dries the slurry in a drying unit (not shown) to fill the insulating particles into gaps between the plurality of dies.

[0039] 10 , the coating unit 220 of the fine particle filling device 200 includes a chamber 201, a spin chuck 202 that rotatably holds the structure 1 within the chamber 201, a motor 203 that rotates the spin chuck 202, and a nozzle 204 that ejects slurry onto the structure 1 held by the spin chuck 202. Slurry is supplied to the nozzle 204 from a slurry supply mechanism 205 via piping 206. A cup 207 for covering the structure 1 held by the spin chuck 202 is provided within the chamber 201. A drain pipe 208 is provided at the bottom of the cup 207. A transfer port 209 for transferring the structure 1 in and out is provided on a side wall of the chamber 201. In addition, a back rinse nozzle 210 is provided on the back side of the structure 1 held by the spin chuck 202.

[0040] In the particle filling device 200 configured as described above, in the coating unit 220, a slurry in which insulating particles such as silica are dispersed in a chemical solution is supplied from a slurry supply mechanism 205 via a pipe 206 to a nozzle 204. The slurry is then ejected from the nozzle 204 onto the surface of the structure 1, and the structure 1 is then rotated by a motor 203 via a spin chuck 202. This causes the slurry to be coated onto the surface of the structure 1. As a result, the insulating particles dispersed in the chemical solution fill the gaps between the multiple dies. The chemical solution is then volatilized and removed in a drying unit, leaving the gaps filled with only insulating particles.

[0041] 11 is a longitudinal sectional view showing an example of a film forming apparatus 300, and FIG. 12 is a transverse sectional view showing an example of the film forming apparatus 300. The film forming apparatus 300 forms an insulating film by ALD on the surface of the structure 1 after filling the gap with insulating fine particles, thereby filling the gap with the film, and is configured as a vertical batch type film forming apparatus. In this example, a Si-containing gas is supplied as a source gas, and O is supplied as a reactive gas. ２ Plasma is supplied to form an insulating film of SiO ２ The case of forming a film will be described.

[0042] The film forming apparatus 300 has a cylindrical processing vessel 301 that is open at the bottom and sealed at the top by a ceiling plate 302. The processing vessel 301 and the ceiling plate 302 are made of, for example, quartz. A cylindrical metal manifold 303 is connected to the opening at the bottom of the processing vessel 301 via a sealing member 304 such as an O-ring.

[0043] The manifold 303 supports the lower end of the processing vessel 301, and a quartz boat 305 capable of mounting, for example, 50 to 100 microparticle-filled structures 1 in multiple stages can be inserted into the processing vessel 301 from below the manifold 303. The boat 305 has three support columns 306 (see FIG. 12 ), and is configured so that multiple structures 1 can be supported by grooves formed in the support columns 306.

[0044] This boat 305 is placed on a table 308 via a heat-insulating tube 307 made of, for example, quartz, and this table 308 is supported on a rotating shaft 310 that passes through a metal lid 309 that opens and closes the lower end opening of the manifold 303.

[0045] A magnetic fluid seal 311, for example, is provided at the penetration portion of the rotating shaft 310, which rotatably supports and airtightly seals the rotating shaft 310. A seal member 312 is interposed between the periphery of the lid portion 309 and the lower end of the manifold 303, thereby maintaining the sealing performance inside the processing vessel 301.

[0046] The rotation shaft 310 is attached to the tip of an arm 313 supported by, for example, an elevating mechanism (not shown), and the boat 305, the lid 309, etc. are raised and lowered together to be inserted into and removed from the processing vessel 301. Note that the table 308 may be fixed to the lid 309 side, so that the film formation process can be performed without rotating the boat 305.

[0047] The film forming apparatus 300 also includes a processing chamber 301. ２ Gas supply O ２ a gas supply mechanism 314, a Si-containing gas supply mechanism 315 for supplying a Si-containing gas as a source gas into the processing vessel 301, and an inert gas, such as N 2 , as a purge gas into the processing vessel 301. ２ and a purge gas supply mechanism 316 for supplying gas.

[0048] O ２ The gas supply mechanism 314 is ２ Gas supply source 317 and O ２ Gas supply source 317 to O ２ Gas conducting O ２ Gas pipe 318 and this O ２ The O pipe 318 is connected to the gas pipe 318 and extends vertically upward through the side wall of the manifold 303. ２ and a gas dispersion nozzle 319. ２ A plurality of gas discharge holes 319 a are formed at predetermined intervals in the vertical portion of the gas dispersion nozzle 319 , and O is uniformly discharged from each gas discharge hole 319 a horizontally toward the processing vessel 301 . ２ It is possible to discharge gas.

[0049] The Si-containing gas supply mechanism 315 includes a Si-containing gas supply source 320, a Si-containing gas pipe 321 that introduces a Si-containing gas from the Si-containing gas supply source 320, and a Si-containing gas dispersion nozzle 322 that is connected to the Si-containing gas pipe 321 and is made of a quartz tube that penetrates the sidewall of the manifold 303 inward and extends vertically upward. Two Si-containing gas dispersion nozzles 322 are provided (see FIG. 12 ). Each Si-containing gas dispersion nozzle 322 has a plurality of gas discharge holes 322 a formed at predetermined intervals along its length, so that the Si-containing gas can be discharged approximately uniformly from each gas discharge hole 322 a in the horizontal direction into the processing vessel 301. The number of the Si-containing gas dispersion nozzles 322 may be only one.

[0050] The purge gas supply mechanism 316 includes a purge gas supply source 323, a purge gas pipe 324 that guides purge gas from the purge gas supply source 323, and a purge gas nozzle 325 that is connected to the purge gas pipe 324 and penetrates the side wall of the manifold 303.

[0051] O ２ The gas pipe 318, the Si-containing gas pipe 321, and the purge gas pipe 324 are provided with on-off valves 318a, 321a, and 324a and flow rate controllers 318b, 321b, and 324b such as mass flow controllers, respectively. ２ The gas, the Si-containing gas, and the purge gas can be supplied while controlling the flow rates thereof.

[0052] The sidewall of the processing vessel 301 is partially covered with O ２ The gas is excited to O ２A plasma generation mechanism 330 for generating plasma is provided. The plasma generation mechanism 330 includes a plasma partition wall 332 made of, for example, quartz, which is airtightly bonded to the outer wall of the processing vessel 301 so as to cover an opening 331 formed by cutting the side wall of the processing vessel 301 in the vertical direction from the outside. The plasma partition wall 332 protrudes from the processing vessel 301, and its internal space communicates with the processing space within the processing vessel 301. The plasma generation mechanism 330 also includes a pair of elongated plasma electrodes 333 arranged facing each other in the vertical direction on the outer surfaces of both side walls of the plasma partition wall 332, and a high-frequency power supply 335 connected to the plasma electrodes 333 via a power supply line 334. The opening 331, the plasma partition wall 332, and the plasma electrode 333 are formed so as to cover all of the structures 1 held in the boat 305 in the vertical direction, and O ２ The gas dispersion nozzle 319 extends upward along the innermost portion of the plasma compartment wall 332. ２ The gas is discharged from the gas discharge holes 319 a of the gas dispersion nozzle 319 . ２ With the gas being injected, a high frequency voltage of, for example, 13.56 MHz is applied to the plasma electrode 333 from the high frequency power supply 335, whereby O ２ A plasma is generated. ２ The plasma is diffused toward the processing vessel 301 and supplied to each structure 1. An insulating protective cover 336 is attached to the outside of the plasma partition wall 332 so as to cover it.

[0053] An exhaust port 337 for evacuating the processing vessel 301 is provided on the opposite side of the opening 331 of the processing vessel 301. The exhaust port 337 is formed by cutting out a long, narrow opening at the top and bottom of the processing vessel 301. An exhaust port cover member 338 for covering the exhaust port 337 is attached to the processing vessel 301. The exhaust port cover member 338 extends upward along the sidewall of the processing vessel 301 and defines an exhaust flow path and a gas outlet 339 located above the processing vessel 301. The processing vessel 301 is evacuated from the gas outlet 339 by a vacuum exhaust mechanism (not shown). A cylindrical heating device 340 for heating the interior of the processing vessel 301 is provided so as to surround the outer periphery of the processing vessel 301.

[0054] In the film forming apparatus configured in this manner, first, at room temperature, the boat 305 carrying, for example, 50 to 100 structures 1 is loaded into the processing vessel 301, which has been controlled to a predetermined temperature in advance, by lifting it from below, and the lower end opening of the manifold 303 is closed with the lid 309 to form an airtight space inside the processing vessel 301.

[0055] The processing vessel 301 is then evacuated to maintain a predetermined process pressure, and the power supplied to the heating device 340 is controlled to maintain the temperature inside the processing vessel 301 at the process temperature, and the film formation process is started with the boat 305 rotating. The film formation process at this time includes a first step of supplying a Si-containing gas, which is a source gas, into the processing vessel 301 and adsorbing it on the structure 1, and a second step of supplying O, which is a reactive gas, to the processing vessel 301. ２ O formed by exciting the gas ２ Plasma (O ２ This is performed by ALD, which repeats a second step in which the first step supplies the first radicals (radicals) to the processing chamber 301 and reacts them with the Si source gas. ２ A film is formed to fill the gaps in the structure 1. After the first and second steps, a purge step is carried out in which a purge gas is supplied into the processing vessel 301 to remove residual gas.

[0056] SiO ２ The film is formed by a Si-containing gas as a raw material gas and an O ２ Plasma (O ２ By forming a film by ALD using radicals, SiO ２ The film can be embedded in the gap. In particular, the Si-containing gas can be, for example, an aminosilane gas, such as diisopropylaminosilane (DIPAS(SiH ３ N (iPr) ２ ) can be used to form a film at 100° C. or less.

[0057] [Transportation Device] The transport device 400 transports the structures 1 from the particulate filling device 200 to the film forming device 300. The transport at this time is performed in a state where a plurality of structures 1 are housed in a storage container. The transport device 400 may transport the structures 1 in a state where the storage container is held in a vacuum atmosphere or an inert atmosphere.

[0058] [Control Unit] The control unit 500 controls the particulate filling device 200, the film forming device 300, and the transport device 400, which are components of the embedding system 100. The control unit 500 has a main control unit with a CPU (computer), an input device, an output device, a display device, and a storage device. The main control unit of the control unit 500 causes the embedding system 100 to perform a desired operation based on a processing recipe stored in, for example, a storage medium built into the storage device or a storage medium set in the storage device.

[0059] In the embedding system 100, the particulate filling device 200 and the film forming device 300 configured as described above are operated as described above under the control of the control unit 500, thereby realizing the embedding method of one embodiment.

[0060] In addition, the embedding system 100 may also have a cleaning device that cleans the structure 1 before filling the gaps in the structure 1 with insulating microparticles, and a transport device that transports the structure 1 from the cleaning device to the microparticle filling device 200.

[0061] Although the embodiments have been described above, the disclosed embodiments should be considered to be illustrative and not restrictive in all respects. The above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims.

[0062] For example, the particle filling device in the above embodiment is exemplified as one that spin-coats a structure with insulating particles dispersed in a chemical solution, but is not limited to this, and may be one that fills the insulating particles by immersing a structure in a chemical solution in which insulating particles have been dispersed and then lifting it up. In this case, a batch-type particle filling device that can fill multiple structures with particles at once can be used.

[0063] Furthermore, although a vertical batch type film formation apparatus has been exemplified as the film formation apparatus, the present invention is not limited to this, and may be a single-wafer type film formation apparatus in which a structure is placed on a stage and ALD film formation is performed.

[0064] 1; structure, 2; substrate, 3; adhesive layer, 4; die, 4a; semiconductor substrate, 4b; circuit portion, 5; gap, 6; insulating particles, 7; insulating film, 8; embedding layer, 100; embedding system, 200; particle filling device, 220; coating unit, 300; film forming device, 400; conveying device, 500; control unit

Claims

1. A method for filling a structure having a plurality of dies spaced apart on a substrate, filling gaps between the plurality of dies with insulating fine particles, and depositing an insulating film on a surface of the structure by ALD and filling the gaps with the film, thereby forming a filling layer in the gaps with the film between the fine particles.

2. The embedding method of claim 1, wherein the substrate is a carrier substrate, and the die is attached to the substrate via an adhesive layer.

3. The embedding method according to claim 1, further comprising cleaning the surface of said structure prior to filling said microparticles.

4. The embedding method according to claim 1, wherein the microparticles and the membrane are made of the same material.

5. The method of claim 1, wherein said film is embedded at a temperature of 100° C. or less.

6. The filling method according to claim 1, wherein the filling of the microparticles comprises filling the gap with the microparticles in a state where the microparticles are dispersed in a chemical solution.

7. The embedding method according to claim 6, wherein the chemical liquid is either water, isopropyl alcohol, or ethylene glycol.

8. The method of claim 6 or 7, further comprising drying the structure after filling the microparticles.

9. An embedding method according to any one of claims 1 to 7, wherein the size of the microparticles is 300 to 1500 nm.

10. The fine particles are SiO ２ The method according to claim 1 , wherein the insulating layer is made of SiN or SiN.

11. The filling of the film is performed by alternately supplying a Si-containing gas and an oxygen-containing gas to form a SiO ２ The method according to any one of claims 1 to 7, further comprising embedding a membrane.

12. The oxygen-containing gas is O ２ The embedding method according to claim 11, wherein the embedding is plasma.

13. The method according to any one of claims 1 to 7, wherein the step of embedding the film comprises alternately supplying a Si-containing gas and a nitrogen-containing gas to embed a SiN film.

14. The nitrogen-containing gas is N ２ The embedding method according to claim 13, wherein the embedding is plasma.

15. An embedding system for embedding gaps between a plurality of dies of a structure having a plurality of dies arranged at intervals on a substrate, comprising: a particle filling device for filling the gaps with insulating particles; and a film forming device for forming an insulating film on a surface of the structure by ALD and embedding the film in the gaps, wherein the particles are embedded in the gaps by the particle filling device, and the film is filled between the particles in the gaps by the film forming device, thereby forming a buried layer in the gap.

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