Display device, laser device for manufacturing display device, method for manufacturing display device by using laser device, and electronic device comprising display device

Abstract

A display device, a laser device for manufacturing the display device, a method for manufacturing the display device by using the laser device, and an electronic device comprising the display device are provided. A plurality of side surfaces of a glass substrate of the display device according to one embodiment include a first side surface and a second side surface. The radius of curvature measured at the center of the first side surface, the upper end of the first side surface, and the upper center between the center and the upper end of the first side surface is defined as a first upper radius of curvature. The radius of curvature measured at the center of the second side surface, the upper end of the second side surface, and the upper center between the center and the upper end of the second side surface is defined as a second upper radius of curvature. The difference between the first upper radius of curvature and the second upper radius of curvature is 30 μm or less.

Description

A display device, a laser device for manufacturing the display device, a method for manufacturing the display device using the laser device, and an electronic device including the display device

[0001] The present invention relates to a display device, a laser device for manufacturing the display device, a method for manufacturing the display device using the laser device, and an electronic device including the display device.

[0002] As the information society develops, demand for display devices for displaying images is increasing in various forms. Display devices can be flat panel displays such as liquid crystal displays (LCDs), field emission displays (FEDs), and light-emitting displays (LEDs).

[0003] A display device includes a display area that displays images and a non-display area surrounding the display area, such as a non-display area. Recently, the width of the non-display area has been gradually decreasing to enhance the immersiveness of the display area and the aesthetic appeal of the device.

[0004] Meanwhile, in the manufacturing process of a display device, the display device can be formed by cutting a plurality of display cells formed on a substrate including a plurality of display cells. At this time, in order to improve the mechanical strength of the substrate, the side surface of each of the substrates of the plurality of display cells is processed to have a round cross-section using a CNC (computer numerical control) polishing device or the like. At this time, it is difficult to process the side surfaces of the substrate to have cross-sections having substantially the same radius of curvature.

[0005] The problem to be solved by the present invention is to provide a display device capable of minimizing the difference in curvature between the sides of a substrate.

[0006] Another problem to be solved by the present invention is to provide a laser device for manufacturing the display device capable of minimizing the difference in curvature between the side surfaces of the substrate.

[0007] Another problem to be solved by the present invention is to provide a method for manufacturing a display device using a laser device capable of minimizing the difference in curvature between side surfaces of a substrate.

[0008] Another problem to be solved by the present invention is to provide an electronic device including a display device capable of minimizing the difference in curvature between side surfaces of a substrate.

[0009] The tasks of the present invention are not limited to the tasks mentioned above, and other technical tasks not mentioned will be clearly understood by those skilled in the art from the description below.

[0010] According to one embodiment of the present invention for solving the above problem, a display device includes a glass substrate including a first surface, a second surface facing the first surface, and a plurality of side surfaces disposed between the first surface and the second surface, and a light emitting element layer disposed on the first surface of the glass substrate and including light emitting elements that emit light. The plurality of side surfaces of the glass substrate include a first side surface and a second side surface, and a radius of curvature measured at a center of the first side surface, an upper end of the first side surface, and an upper center between the center and the upper end of the first side surface is defined as a first upper radius of curvature, a radius of curvature measured at a center of the second side surface, an upper end of the second side surface, and an upper center between the center and the upper end of the second side surface is defined as a second upper radius of curvature, and a difference between the first upper radius of curvature and the second upper radius of curvature is 30 μm or less.

[0011] According to one embodiment of the present invention for solving the above problem, a display device includes a glass substrate including a first surface, a second surface facing the first surface, and a plurality of side surfaces disposed between the first surface and the second surface, and a light-emitting element layer disposed on the first surface of the glass substrate and including light-emitting elements that emit light. Each of the plurality of side surfaces of the glass substrate includes a first sub-side surface having a planar shape and a second sub-side surface having a curved shape. The length of the second sub-side surface is longer than the length of the first sub-side surface, the first sub-side surface is in contact with the first surface, and the second sub-side surface is in contact with the second surface.

[0012] A display device according to one embodiment for solving the above problem comprises a first substrate including a first surface, a second surface facing the first surface, a second substrate disposed on the first surface of the first substrate, and a light-emitting element layer disposed on one surface of the second substrate and including light-emitting elements that emit light. The first substrate is made of glass, the second substrate is made of a polymer resin, the first substrate includes a first sub-substrate and a second sub-substrate which are arranged apart from each other, and a radius of curvature measured at a center of the first side, an upper end of the first side, and an upper center between the center and the upper end of the first side is defined as a first upper radius of curvature, and a radius of curvature measured at a center of the second side, an upper end of the second side, and an upper center between the center and the upper end of the second side is defined as a second upper radius of curvature, and a difference between the first upper radius of curvature and the second upper radius of curvature is 30 μm or less.

[0013] According to one embodiment of the present invention for solving the above problem, a display device includes a first substrate including a first surface, a second surface facing the first surface, a second substrate disposed on the first surface of the first substrate, and a light-emitting element layer disposed on one surface of the second substrate and including light-emitting elements that emit light. The first substrate is made of glass, the second substrate is made of a polymer resin, the first substrate includes a first sub-substrate and a second sub-substrate that are disposed apart from each other, and each of a plurality of side surfaces of the first sub-substrate includes a first sub-side surface having a planar shape and a second sub-side surface having a curved shape, and a length of the second sub-side surface is longer than a length of the first sub-side surface, the first sub-side surface is in contact with the first surface, and the second sub-side surface is in contact with the second surface.

[0014] According to one embodiment of the present invention for solving the above problem, a laser device comprises a light source for outputting a laser beam, a diffraction element including diffraction patterns for diffracting the laser beam, a relay lens for transmitting the laser beam diffracted by the diffraction patterns at a predetermined ratio, a phase retardation plate for delaying the phase of light incident from the diffraction element, and an objective lens for focusing the laser beam incident from the phase retardation plate. The diffraction element rotates at a predetermined angle.

[0015] According to one embodiment of the present invention for solving the above problem, a laser device comprises a light source for outputting a laser beam, a diffraction element including diffraction patterns for diffracting the laser beam, a prism configured to rotate to rotate the laser beam incident from the diffraction element, a phase retardation plate for delaying the phase of light incident from the prism, and an objective lens for focusing the laser beam incident from the phase retardation plate. The prism and the phase retardation plate rotate simultaneously at a predetermined angle.

[0016] According to one embodiment of the present invention, a method for manufacturing a display device for solving the above problem includes the steps of forming a plurality of display cells on a first surface of a mother substrate, irradiating a laser beam using a laser device on a second surface of the mother substrate facing the first surface to form a plurality of laser spots arranged along edges of the plurality of display cells, spraying an etchant on the second surface of the mother substrate at a first speed without a mask to reduce a thickness of the mother substrate, and spraying the etchant on the second surface of the mother substrate at a second speed without the mask to reduce a thickness of the mother substrate. The first speed is faster than the second speed.

[0017] According to one embodiment of the present invention for solving the above problem, an electronic device includes a display device for displaying an image. The display device includes a glass substrate including a first surface, a second surface facing the first surface, and a plurality of side surfaces disposed between the first surface and the second surface, and a light-emitting element layer disposed on the first surface of the glass substrate and including light-emitting elements that emit light. The plurality of side surfaces of the glass substrate include a first surface and a second surface, and a radius of curvature measured at a center of the first surface, an upper end of the first surface, and an upper center between the center and the upper end of the first surface is defined as a first upper radius of curvature, a radius of curvature measured at a center of the second surface, an upper end of the second surface, and an upper center between the center and the upper end of the second surface is defined as a second upper radius of curvature, and a difference between the first upper radius of curvature and the second upper radius of curvature is 30 μm or less.

[0018] Specific details of other embodiments are included in the detailed description and drawings.

[0019] According to the embodiments, a display device, a laser device for manufacturing the display device, a method for manufacturing the display device using the laser device, and an electronic device including the display device can improve the mechanical strength of a substrate of the display device.

[0020] According to the display device according to the embodiments, the laser device for manufacturing the display device, the method for manufacturing the display device using the laser device, and the electronic device including the display device, the thickness of the substrate can be reduced while simultaneously cutting the substrate.

[0021] According to the display device according to embodiments, a laser device for manufacturing the display device, a method for manufacturing the display device using the laser device, and an electronic device including the display device, it is possible to minimize the difference in the radius of curvature between the side surfaces of the substrate of each of a plurality of display cells.

[0022] The effects according to the embodiments are not limited to those exemplified above, and more diverse effects are included in this specification.

[0023] Figure 1 is a perspective view showing a display device according to one embodiment.

[0024] FIG. 2 is a plan view showing a display panel and driving circuits according to one embodiment.

[0025] FIG. 3 is a block diagram showing a display device according to one embodiment.

[0026] FIG. 4 is a circuit diagram showing pixels of a display device according to one embodiment.

[0027] FIG. 5 is a circuit diagram showing pixels of a display device according to another embodiment.

[0028] Figure 6 is a circuit diagram showing pixels of a display device according to another embodiment.

[0029] FIG. 7a is a cross-sectional view showing an example of a display device cut along line X1-X1' of FIG. 1.

[0030] FIG. 7b is a cross-sectional view showing an example of a display device with a bent circuit board in FIG. 7a.

[0031] FIG. 8a is a cross-sectional view showing an example of a display device cut along line X1-X1' of FIG. 1.

[0032] FIG. 8b is a cross-sectional view showing an example of a display device with a bent circuit board in FIG. 8a.

[0033] FIG. 9A is a cross-sectional view showing an example of a display area of ​​a display panel according to one embodiment.

[0034] FIG. 9b is a cross-sectional view showing an example of a display area of ​​a display panel according to another embodiment.

[0035] Fig. 10 is a cross-sectional view showing an example of a display area of ​​a display panel according to another embodiment.

[0036] Fig. 11 is a detailed cross-sectional view showing the light emitting diode element of Fig. 10.

[0037] Fig. 12 is a cross-sectional view showing an example of a display area of ​​a display panel according to another embodiment.

[0038] Figure 13 is a layout diagram showing in detail an example of area A of Figure 2.

[0039] Figure 14 is a layout diagram showing in detail an example of area B of Figure 2.

[0040] Figure 15 is a layout diagram showing in detail an example of area C of Figure 2.

[0041] Figure 16 is a layout diagram showing in detail an example of area D of Figure 2.

[0042] Fig. 17 is a cross-sectional view showing an example of a display panel cut along line X2-X2' of Fig. 13.

[0043] Fig. 18 is a cross-sectional view showing an example of a display panel cut along line X3-X3' of Fig. 14.

[0044] Fig. 19 is a cross-sectional view showing an example of a display panel cut along line X4-X4' of Fig. 15.

[0045] FIG. 20 is a cross-sectional view showing an example of a display panel cut along line X5-X5' of FIG. 16.

[0046] Figure 21 is a cross-sectional view showing in detail an example of area E of Figure 17.

[0047] Figure 22 is a cross-sectional view showing in detail an example of area F of Figure 18.

[0048] Figure 23 is a cross-sectional view showing in detail an example of area G of Figure 19.

[0049] Figure 24 is a cross-sectional view showing in detail an example of area H of Figure 20.

[0050] FIGS. 25a to 25d are enlarged cross-sectional views showing examples of the first to fourth side surfaces of the substrate in FIGS. 17 to 20.

[0051] FIGS. 26A to 26D are enlarged cross-sectional views showing further examples of the first to fourth side surfaces of the substrate in FIGS. 17 to 20.

[0052] Fig. 27 is a perspective view showing a display device according to another embodiment.

[0053] Fig. 28 is a plan view showing a display panel and driving circuits according to another embodiment.

[0054] Fig. 29 is a cross-sectional view showing an example of a display panel cut along line X6-X6' of Fig. 27.

[0055] FIG. 30 is a cross-sectional view showing an example of a display device with a bent circuit board in FIG. 29.

[0056] Figure 31 is a layout diagram showing in detail an example of area I of Figure 28.

[0057] Fig. 32 is a cross-sectional view showing an example of a display panel cut along line X7-X7' of Fig. 31.

[0058] Fig. 33 is a cross-sectional view showing an example of a display panel cut along line X8-X8' of Fig. 31.

[0059] Figure 34 is a cross-sectional view showing in detail an example of area J of Figure 32.

[0060] FIGS. 35a to 35d are enlarged cross-sectional views showing examples of the first to fourth hole sides illustrated in FIGS. 32 and 33.

[0061] FIGS. 36a to 36d are enlarged cross-sectional views showing further examples of the first to fourth hole sides illustrated in FIGS. 32 and 33.

[0062] Fig. 37 is a perspective view showing a display device according to another embodiment.

[0063] FIG. 38 is a plan view showing a display panel and driving circuits according to another embodiment.

[0064] Fig. 39 is a cross-sectional view showing an example of a display panel cut along line X9-X9' of Fig. 37.

[0065] Fig. 40 is a cross-sectional view showing an example of a display device with a bent bending area in Fig. 39.

[0066] Fig. 41 is a cross-sectional view showing an example of a display panel cut along line X10-X10' of Fig. 37.

[0067] FIG. 42 is a cross-sectional view showing an example of a display panel cut along line X11-X11' of FIG. 37.

[0068] FIGS. 43a to 43d are enlarged cross-sectional views showing examples of the first to fourth side surfaces of the first sub-substrate in FIGS. 39 and 41.

[0069] FIGS. 44a to 44d are enlarged cross-sectional views showing examples of the first to fourth side surfaces of the second sub-substrate in FIGS. 39 and 42.

[0070] FIGS. 45A to 45D are enlarged cross-sectional views showing further examples of the first to fourth side surfaces of the first sub-substrate in FIGS. 39 and 41.

[0071] FIGS. 46A through 46D are enlarged cross-sectional views showing further examples of the first through fourth side surfaces of the second sub-substrate in FIGS. 39 and 42.

[0072] FIG. 47 is a perspective view showing a laser device according to one embodiment.

[0073] Figures 48a and 48b are exemplary drawings for explaining light output from a prism when the prism is rotated by Φ.

[0074] Fig. 49 is an exemplary drawing showing the polarization of output light according to rotation of the laser device in the embodiment of Fig. 47.

[0075] FIG. 50 is another exemplary drawing showing the polarization of output light according to rotation of the laser device in the embodiment of FIG. 47.

[0076] Figures 51a to 51c are exemplary drawings showing the processing form of the laser according to the propagation direction and polarization direction of the laser beam.

[0077] Figure 52 is a perspective view showing a laser device according to another embodiment.

[0078] FIG. 53 is an exemplary drawing showing the polarization of output light according to rotation of the laser device in the embodiment of FIG. 52.

[0079] FIG. 54 is an exemplary drawing showing the polarization of output light according to rotation of the laser device in the embodiment of FIG. 52.

[0080] Figure 55 is a perspective view showing a laser device according to another embodiment.

[0081] Fig. 56 is an exemplary drawing showing the polarization of output light according to rotation of the laser device in the embodiment of Fig. 55.

[0082] Figure 57 is a perspective view showing a laser device according to another embodiment.

[0083] Fig. 58 is a flowchart showing a method for manufacturing a display device according to one embodiment.

[0084] Figures 59 to 63 are perspective views illustrating a method of manufacturing a display device according to one embodiment.

[0085] FIGS. 64 to 68 are cross-sectional views showing a cross-section of X12-X12' for explaining a method of manufacturing a display device according to one embodiment.

[0086] Figure 69 is a flowchart showing step S120 of Figure 58 in detail.

[0087] FIGS. 70 to 77 are exemplary drawings showing the rotation of the laser device according to the embodiments of FIGS. 52 to 54 for laser sketching surrounding the edge of a display cell.

[0088] Figure 78 is a side view showing an arrangement of laser spots formed along the scanning direction of the laser beam.

[0089] FIGS. 79 to 86 are exemplary drawings showing the rotation of the laser device according to the embodiments of FIGS. 55 and 56 for laser sketching surrounding the edge of a display cell.

[0090] FIGS. 87a to 87d are exemplary drawings showing the arrangement of laser spots irradiated by a laser device in the XYZ plane, the XY plane, the XZ plane, and the YZ plane according to one embodiment.

[0091] FIG. 88 is an exemplary drawing for detailing the arrangement of laser spots in the XZ plane irradiated by a laser device according to one embodiment.

[0092] FIGS. 89 and 90 are cross-sectional views showing a cross-section of X12-X12' to explain a method of manufacturing a display device according to another embodiment.

[0093] FIG. 91 is an exemplary drawing showing laser spots irradiated by a laser device according to one embodiment.

[0094] FIGS. 92 and 93 are cross-sectional views showing a cross-section of X12-X12' to explain a method of manufacturing a display device according to another embodiment.

[0095] FIG. 94 is an exemplary drawing showing laser spots irradiated by a laser device according to one embodiment.

[0096] Figure 95 is a flowchart showing a method for manufacturing a display device according to one embodiment.

[0097] FIGS. 96 to 101 are perspective views illustrating a method of manufacturing a display device according to one embodiment.

[0098] FIGS. 102 to 105 are cross-sectional views showing a cross-section of X13-X13' for explaining a method of manufacturing a display device according to one embodiment.

[0099] FIGS. 106 to 109 are exemplary drawings showing the rotation of a laser device according to the embodiments of FIGS. 52 to 54 for laser sketching surrounding the edge of a through hole of a display cell.

[0100] FIGS. 110 to 113 are exemplary drawings showing the rotation of the laser device according to the embodiments of FIGS. 55 and 56 for laser sketching surrounding the edge of a through hole of a display cell.

[0101] FIGS. 114 and 115 are cross-sectional views showing a cross-section of X13-X13' to explain a method of manufacturing a display device according to another embodiment.

[0102] FIGS. 116 and 117 are cross-sectional views showing a cross-section of X13-X13' to explain a method of manufacturing a display device according to another embodiment.

[0103] Fig. 118 is a flowchart showing a method for manufacturing a display device according to one embodiment.

[0104] Figures 119 to 124 are perspective views illustrating a method of manufacturing a display device according to one embodiment.

[0105] FIGS. 125 to 128 are cross-sectional views showing a cross-section of X14-X14' for explaining a method of manufacturing a display device according to one embodiment.

[0106] FIGS. 129 and 130 are exemplary drawings showing the rotation of the laser device according to the embodiments of FIGS. 52 to 54 for laser sketching of the bending area of ​​the display cell.

[0107] FIGS. 131 and 132 are exemplary drawings showing the rotation of the laser device according to the embodiment of FIGS. 55 and 56 for laser sketching of the bending area of ​​the display cell.

[0108] FIGS. 133 and 134 are cross-sectional views showing a cross-section of X14-X14' to explain a method of manufacturing a display device according to another embodiment.

[0109] FIGS. 135 and 136 are cross-sectional views showing a cross-section of X14-X14' to explain a method of manufacturing a display device according to another embodiment.

[0110] FIG. 137 is an exemplary drawing showing an electronic device including a display device according to one embodiment.

[0111] FIG. 138 is an exemplary drawing showing an electronic device including a display device according to one embodiment.

[0112] FIG. 139 is an exemplary drawing showing an electronic device including a display device according to one embodiment.

[0113] FIG. 140 is an exemplary drawing showing an electronic device including a display device according to one embodiment.

[0114] FIG. 141 is an exemplary drawing showing a virtual reality device including a display device according to one embodiment.

[0115] FIG. 142 is an exemplary drawing showing an electronic device including a display device according to one embodiment.

[0116] FIG. 143 is an exemplary drawing showing an automobile instrument panel and center fascia to which an electronic device including a display device according to one embodiment is applied.

[0117] FIG. 144 is an exemplary drawing showing an electronic device including a display device according to one embodiment.

[0118] The advantages and features of the present invention, and the methods for achieving them, will become clearer with reference to the embodiments described in detail below together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various different forms. These embodiments are provided solely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined solely by the scope of the claims.

[0119] When elements or layers are referred to as being "on" another element or layer, this includes both cases where the other element or layer is directly on top of the other element or layer or intervening therebetween. Like reference numerals refer to like elements throughout the specification. The shapes, sizes, ratios, angles, numbers, etc. disclosed in the drawings for explaining the embodiments are illustrative and therefore the present invention is not limited to the matters illustrated.

[0120] Although terms like "first" and "second" are used to describe various components, these components are not limited by these terms. These terms are used merely to distinguish one component from another. Therefore, it should be understood that a "first" component referred to below may also be a "second" component within the technical scope of the present invention.

[0121] The individual features of the various embodiments of the present invention can be partially or wholly combined or combined with each other, and various technical linkages and operations are possible, and each embodiment can be implemented independently of each other or implemented together in a related relationship.

[0122] Specific embodiments are described below with reference to the attached drawings.

[0123] Fig. 1 is a perspective view showing a display device according to one embodiment. Fig. 2 is a plan view showing a display panel and driving circuits according to one embodiment.

[0124] Referring to FIGS. 1 and 2, a display device (10) according to one embodiment is a device for displaying a moving image or a still image, and can be used as a display screen for various products such as a mobile phone, a smart phone, a tablet personal computer (PC), a smart watch, a watch phone, a mobile communication terminal, an electronic notebook, an electronic book, a portable multimedia player (PMP), a navigation system, an Ultra Mobile PC (UMPC), etc., as well as a television, a laptop, a monitor, a billboard, an Internet of Things (IOT) device, etc.

[0125] The display device (10) according to one embodiment may be a light-emitting display device such as an organic light-emitting display device using an organic light-emitting diode, a quantum dot light-emitting display device including a quantum dot light-emitting layer, an inorganic light-emitting display device including an inorganic semiconductor, and an ultra-small light-emitting display device using a micro or nano light emitting diode (micro LED or nano LED). Hereinafter, the display device (10) is described mainly as an organic light-emitting display device, but the present invention is not limited thereto.

[0126] A display device (10) according to one embodiment includes a display panel (100), a driving circuit (200), and a circuit board (300).

[0127] The display panel (100) may be formed as a rectangular plane having a long side in a first direction (X-axis direction) and a short side in a second direction (Y-axis direction) intersecting the first direction (X-axis direction). A corner where the long side in the first direction (X-axis direction) and the short side in the second direction (Y-axis direction) meet may be formed at a right angle or may be formed to have a rounded shape so as to have a curvature. The first direction (X-axis direction) and the second direction (Y-axis direction) are planes parallel to the display area (DA) and may be orthogonal to each other. The plane shape of the display panel (100) is not limited to a square, and may be formed in another polygonal, circular, or oval shape.

[0128] The display panel (100) may be formed flat, but is not limited thereto. For example, the display panel (100) may include curved portions formed at the left and right ends and having a constant or varying curvature. Alternatively, at least a portion of the display panel (100) may be curved, bent, folded, or rolled.

[0129] The display panel (100) may include a display area (DA) for displaying an image and a non-display area (NDA) arranged around the display area (DA). The non-display area (NDA) may surround the display area (DA).

[0130] The display area (DA) may occupy most of the area of ​​the display panel (100). The display area (DA) may be arranged at the center of the display panel (100). Pixels each including a plurality of light-emitting areas may be arranged in the display area (DA) to display an image.

[0131] A non-display area (NDA) may be positioned adjacent to a display area (DA). The non-display area (NDA) may be an area outside the display area (DA). The non-display area (NDA) may be positioned to surround the display area (DA). The non-display area (NDA) may be an edge area of ​​the display panel (100).

[0132] Display pads (DP) may be arranged in the non-display area (NDA) to be connected to circuit boards (300). The display pads (DP) may be arranged at one edge of the display panel (100). For example, the display pads (DP) may be arranged at the lower edge of the display panel (100).

[0133] The display pads (DPs) may be the outermost structures arranged at the outermost side on the lower side of the display panel (100). The outermost structures may be structures arranged closest to the edge of the display panel (100). The outermost structures may be structures for driving the display panel (100) or structures for improving the function of the display panel (100).

[0134] The display panel (100) may include a first dam (DAM1), a second dam (DAM2), and a crack dam (CRD).

[0135] The first dam (DAM1) and the second dam (DAM2) may be structures for preventing the encapsulation organic film (TFE2 of FIG. 9a) of the encapsulation layer (ENC of FIG. 9a) from overflowing. The first dam (DAM1) may be arranged to surround the display area (DA), and the second dam (DAM2) may be arranged to surround the first dam (DAM1).

[0136] A crack dam (CRD) may be a structure for preventing cracks in the inorganic films of the encapsulation layer (ENC) from propagating during a process of cutting the substrate (SUB) during the manufacturing process of the display device (10). The crack dam (CRD) may be arranged along the left, upper, and right edges of the display panel (100). The crack dam (CRD) may not be arranged at the lower edge of the display panel (100). The crack dam (CRD) may be the outermost structure arranged at the outermost portions on the left, upper, and right sides of the display panel (100).

[0137] The driving circuits (200) can generate data voltages, power voltages, scan timing signals, etc. The driving circuits (200) can output data voltages, power voltages, scan timing signals, etc. The driving circuits (200) can be arranged between the display pads (PD) and the display area (DA) in the non-display area (NDA).

[0138] Each of the driving circuits (200) may be formed as an integrated circuit (IC). Each of the driving circuits (200) may be attached to a non-display area (NDA) of the display panel (100) in a chip on glass (COG) manner. Alternatively, each of the driving circuits (200) may be attached to a circuit board (300) in a chip on plastic (COP) manner.

[0139] Circuit boards (300) may be placed on display pads (DP) arranged on one edge of the display panel (100). The circuit boards (300) may be attached to the display pads (PD) using a conductive adhesive such as an anisotropic conductive film and an anisotropic conductive adhesive. As a result, the circuit boards (300) may be electrically connected to signal lines of the display panel (100). The circuit boards (300) may be a flexible film such as a flexible printed circuit board or a chip on film.

[0140] FIG. 3 is a block diagram showing a display device according to one embodiment.

[0141] Referring to FIG. 3, a display device (10) according to one embodiment includes a display panel (100), a scan driving circuit (SDC), a driving circuit (200), and a power supply unit (PSU).

[0142] The display panel (100) includes data lines (DL), scan lines (SL), and pixels (PX). The scan lines (SL) may extend in a first direction (X-axis direction) and be arranged in a second direction (Y-axis direction). The data lines (DL) may extend in a second direction (Y-axis direction) and be arranged in a first direction (X-axis direction).

[0143] Each of the pixels (PX) may be connected to at least one of the data lines (DL) and at least one of the scan lines (SL). Each of the pixels (PX) may include a pixel circuit (PXC) including a light emitting element (LE) and a plurality of transistors for supplying a driving current to the light emitting element (LE), as shown in FIGS. 4 to 6. A detailed description of the pixels (PX) will be described later with reference to FIGS. 4 to 6.

[0144] The scan driving circuit (SDC) and the driving circuit (200) may be referred to as a display panel driving circuit. The driving circuit (200) may include a timing control circuit (TIC) and a data driving circuit (DIC).

[0145] A scan driver circuit (SDC) is connected to scan lines (SLs) and applies scan signals. The scan driver circuit (SDC) can generate scan signals according to a scan timing control signal (SCS) input from a timing control circuit (TIC) and output the scan signals to the scan lines (SLs).

[0146] The scan driver circuit (SDC) may include a plurality of transistors. In this case, the scan driver circuit (SDC) may be placed in a non-display area (NDA) located on the left and right sides of the display panel (100).

[0147] The data driver circuit (DIC) is connected to the data lines (DL) and supplies data voltages. The data driver circuit (DIC) receives digital video data (DATA) and a data timing control signal (DCS) from the timing control circuit (TIC). The data driver circuit (DIC) converts the digital video data (DATA) into data voltages according to the data timing control signal (DCS) and outputs them to the data lines (DL).

[0148] The timing control circuit (TIC) receives digital video data (DATA) and timing signals (TS). The timing signals (TS) may include a vertical sync signal, a horizontal sync signal, a data enable signal, a clock signal such as a dot clock, etc.

[0149] The timing control circuit (TIC) generates control signals for controlling the operation timing of the data driver circuit (DIC) and the scan driver circuit (SDC). The control signals may include a data timing control signal (DCS) for controlling the operation timing of the data driver circuit (DIC), and a scan timing control signal (SCS) for controlling the operation timing of the scan driver circuit (SDC).

[0150] The timing control circuit (TIC) outputs digital video data (DATA) and a data timing control signal (DCS) to the data driver circuit (DIC), and outputs a scan timing control signal (SCS) to the scan driver circuit (SDC).

[0151] The power supply unit (PSU) can generate a first power supply voltage (VSS) corresponding to a low-potential voltage and a second power supply voltage (VDD) corresponding to a high-potential voltage from a main power source applied from an external source. In addition, the power supply unit (PSU) can supply various driving voltages to a data drive circuit (DIC), a scan drive circuit (SDC), and a timing control circuit (TIC).

[0152] FIG. 4 is a circuit diagram showing pixels of a display device according to one embodiment.

[0153] Referring to FIG. 4, a pixel (PX) according to one embodiment may include a pixel circuit unit (PXC) and a light emitting element (LE).

[0154] A light emitting element (LE) emits light depending on the driving current. The amount of light emitted by the LE can be proportional to the driving current.

[0155] The light emitting element (LE) may be an organic light emitting element comprising an anode electrode, a cathode electrode, and an organic light emitting layer disposed between the anode electrode and the cathode electrode. Alternatively, the light emitting element (LE) may be an inorganic light emitting element comprising an anode electrode, a cathode electrode, and an inorganic semiconductor disposed between the anode electrode and the cathode electrode.

[0156] The anode electrode of the light emitting element (LE) is connected to the first electrode of the fourth transistor (ST4) and the second electrode of the sixth transistor (ST6), and the cathode electrode can be connected to the first power line (VSL) for supplying the first power voltage (VSS). A parasitic capacitance (Cel) can be formed between the anode electrode and the cathode electrode of the light emitting element (LE).

[0157] The pixel circuit (PXC) includes a driving transistor (DT), switch elements, and a capacitor (C1). The switch elements include first to sixth transistors (ST1, ST2, ST3, ST4, ST5, ST6).

[0158] A driving transistor (DT) includes a gate electrode, a first electrode, and a second electrode. The driving transistor (DT) controls a source-drain current (hereinafter referred to as “driving current”) flowing between the first electrode and the second electrode according to a data voltage applied to the gate electrode.

[0159] A capacitor (C1) is formed between the second electrode of the driving transistor (DT) and a second power line (VDL) for supplying a second power voltage (VDD). One electrode of the capacitor (C1) may be connected to the second electrode of the driving transistor (DT), and the other electrode may be connected to the second power line (VDL).

[0160] When the first electrode of each of the first to sixth transistors (ST1, ST2, ST3, ST4, ST5, ST6) and the driving transistor (DT) is a source electrode, the second electrode may be a drain electrode. Alternatively, when the first electrode of each of the first to sixth transistors (ST1, ST2, ST3, ST4, ST5, ST6) and the driving transistor (DT) is a drain electrode, the second electrode may be a source electrode.

[0161] The active layers of each of the first to sixth transistors (ST1, ST2, ST3, ST4, ST5, ST6) and the driving transistor (DT) may be formed of any one of polysilicon, amorphous silicon, and an oxide semiconductor. When the active layers of each of the first to sixth transistors (ST1, ST2, ST3, ST4, ST5, ST6) and the driving transistor (DT) are formed of polysilicon, the process for forming them may be a low temperature polysilicon (LTPS) process.

[0162] In addition, in FIG. 4, the first to sixth transistors (ST1, ST2, ST3, ST4, ST5, ST6) and the driving transistor (DT) are described as being formed as p-type MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), but they are not limited thereto and may be formed as n-type MOSFETs.

[0163] Furthermore, the first power voltage (VSS) of the first power line (VSL), the second power voltage (VDD) of the second power line (VDL), and the third power voltage (or initialization voltage) of the third power line (VIL) can be set in consideration of the characteristics of the driving transistor (DT), the characteristics of the light-emitting element (LE), etc.

[0164] FIG. 5 is a circuit diagram showing pixels of a display device according to one embodiment.

[0165] The embodiment of FIG. 5 differs from the embodiment of FIG. 4 in that the driving transistor (DT), the second transistor (ST2), the fourth transistor (ST4), the fifth transistor (ST5), and the sixth transistor (ST6) are formed as p-type MOSFETs, and the first transistor (ST1) and the third transistor (ST3) are formed as n-type MOSFETs.

[0166] Referring to FIG. 5, the active layers of each of the driving transistor (DT), the second transistor (ST2), the fourth transistor (ST4), the fifth transistor (ST5), and the sixth transistor (ST6), which are formed as p-type MOSFETs, may be formed of polysilicon, and the active layers of each of the first transistor (ST1) and the third transistor (ST3), which are formed as n-type MOSFETs, may be formed of oxide semiconductors.

[0167] In FIG. 5, there is a difference from the embodiment of FIG. 4 in that the gate electrode of the second transistor (ST2) and the gate electrode of the fourth transistor (ST4) are connected to the write scan line (GWL), and the gate electrode of the first transistor (ST1) is connected to the control scan line (GCL). In addition, in FIG. 5, since the first transistor (ST1) and the third transistor (ST3) are formed of n-type MOSFETs, a scan signal of a gate high voltage can be applied to the control scan line (GCL) and the initialization scan line (GIL). In contrast, since the second transistor (ST2), the fourth transistor (ST4), the fifth transistor (ST5), and the sixth transistor (ST6) are formed of p-type MOSFETs, a scan signal of a gate low voltage can be applied to the write scan line (GWL) and the emission line (EL).

[0168] Fig. 6 is a circuit diagram showing pixels of a display device according to one embodiment.

[0169] Referring to Fig. 6, the light emitting element (LE) emits light according to the driving current. The amount of light emitted by the light emitting element (LE) may be proportional to the driving current. The anode electrode of the light emitting element (LE) may be connected to the source electrode of the driving transistor (DT), and the cathode electrode may be connected to a first power line (VSL) supplied with a first power voltage (VSS) lower than a second power voltage (VDD).

[0170] The driving transistor (DT) controls the current flowing from the second power line (VDL) to which the second power voltage (VDD) is supplied to the light-emitting element (LE) according to the voltage difference between the gate electrode and the source electrode. The gate electrode of the driving transistor (DT) may be connected to the first electrode of the first transistor (ST1), the source electrode may be connected to the anode electrode of the light-emitting element (LE), and the drain electrode may be connected to the first power line (VSL).

[0171] The first transistor (ST1) is turned on by a scan signal of a scan line (SL) to connect the data line (DL) to the gate electrode of a driving transistor (DT). The gate electrode of the first transistor (ST1) may be connected to the scan line (SL), the first electrode may be connected to the gate electrode of the driving transistor (DT), and the second electrode may be connected to the data line (DL).

[0172] The second transistor (ST2) is turned on by a sensing signal of the sensing signal line (SSL) to connect the initialization voltage line (VIL) to the source electrode of the driving transistor (DT). The gate electrode of the second transistor (ST2) may be connected to the sensing signal line (SSL), the first electrode may be connected to the initialization voltage line (VIL), and the second electrode may be connected to the source electrode of the driving transistor (DT).

[0173] It should be noted that the first electrode of each of the first and second transistors (ST1, ST2) may be a source electrode and the second electrode may be a drain electrode, but is not limited thereto. That is, the first electrode of each of the first and second transistors (ST1, ST2) may be a drain electrode and the second electrode may be a source electrode.

[0174] A capacitor (Cst) is formed between the gate electrode and the source electrode of the driving transistor (DT). The capacitor (Cst) stores the differential voltage between the gate voltage and the source voltage of the driving transistor (DT).

[0175] In Fig. 6, the driving transistor (DT) and the first and second transistors (ST1, ST2) are described as being formed as n-type MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), but it should be noted that the present invention is not limited thereto. The driving transistor (DT) and the first and second transistors (ST1, ST2) may also be formed as p-type MOSFETs.

[0176] Meanwhile, it should be noted that the pixel (PX) according to the embodiment of the present specification is not limited to that illustrated in FIGS. 4 to 6. The pixel (PX) according to the embodiment of the present specification may have other known circuit structures that can be adopted by those skilled in the art in addition to the embodiments illustrated in FIGS. 4 to 6.

[0177] Fig. 7a is a cross-sectional view showing an example of a display device cut along line X1-X1' of Fig. 1. Fig. 7b is a cross-sectional view showing an example of a display device with a bent circuit board in Fig. 7a.

[0178] Referring to FIGS. 7A and 7B, a display device (10) according to one embodiment may include a display panel (100), a polarizing film (PF), a cover window (CW), and a panel lower cover (PB). The display panel (100) may include a substrate (SUB), a display layer (DISL), an encapsulation layer (ENC), and a sensor electrode layer (SENL).

[0179] The substrate (SUB) may be made of a rigid material. For example, the substrate (SUB) may be made of glass. That is, the substrate (SUB) may be a glass substrate. The substrate (SUB) may be made of ultra-thin glass (UTG) having a thickness of approximately 250㎛ or less.

[0180] A display layer (DISL) may be arranged on the first surface of the substrate (SUB). The display layer (DISL) may be a layer that displays an image. The display layer (DISL) may include a thin film transistor layer (TFTL) on which thin film transistors are formed and a light emitting element layer (EML) on which light emitting elements that emit light are arranged in light emitting regions.

[0181] In the display area (DA) of the display layer (DISL), scan lines, data lines, power lines, etc. for emitting light may be arranged in the light-emitting areas. In the non-display area (NDA) of the display layer (DISL), a scan driving circuit unit for outputting scan signals to the scan lines, and fan-out lines for connecting the data lines and the driving circuit (200) may be arranged.

[0182] The encapsulation layer (ENC) may be a layer for encapsulating the light emitting element layer (EML) of the display layer (DISL) to prevent oxygen or moisture from penetrating into the light emitting element layer (EML) of the display layer (DISL). The encapsulation layer (ENC) may be disposed on the display layer (DISL). The encapsulation layer (ENC) may be disposed on the upper surface and side surfaces of the display layer (DISL). The encapsulation layer (ENC) may be disposed to cover the display layer (DISL).

[0183] A sensor electrode layer (SENL) may be disposed on the display layer (DISL). The sensor electrode layer (SENL) may include sensor electrodes. The sensor electrode layer (SENL) may detect a user's touch using the sensor electrodes.

[0184] A polarizing film (PF) may be disposed on the display panel (100) to prevent external light from being reflected from the display panel (100) and thereby deteriorating the visibility of an image displayed on the display panel (100). The polarizing film (PF) may include a first base member, a linear polarizing plate, a phase retardation film such as a quarter-wave plate (λ / 4 plate), and a second base member. The first base member, the phase retardation film, the linear polarizing plate, and the second base member of the polarizing film (PF) may be sequentially laminated on the display panel (100).

[0185] However, the embodiment of the present specification is not limited thereto, and the polarizing film (PF) may be omitted. In this case, as shown in FIGS. 8a, 8b, and 9b, an optical layer (OPL) including a plurality of color filters (CF1, CF2, CF3) may be disposed instead of the polarizing film (PF). A planarizing layer and / or an adhesive layer (AHL) may be disposed between the optical layer (OPL) and the cover window (CW). In FIGS. 8a, 8b, and 9b, the optical layer (OPL) is exemplified as being disposed on the sensor electrode layer (SENL) of the display panel (100), but the embodiment of the present specification is not limited thereto. For example, the optical layer (OPL) may be disposed between the encapsulation layer (ENC) and the sensor electrode layer (SENL).

[0186] A cover window (CW) may be placed on a polarizing film (PF). The cover window (CW) may be attached to the polarizing film (PF) by a transparent adhesive material such as an optically clear adhesive (OCA) film.

[0187] The panel lower cover (PB) may be disposed on the second surface of the substrate (SUB) of the display panel (100). The second surface of the substrate (SUB) may be the opposite surface of the first surface. The panel lower cover (PB) may be attached to the second surface of the substrate (SUB) of the display panel (100) via an adhesive member. The adhesive member may be a pressure sensitive adhesive (PSA).

[0188] The panel lower cover (PB) may include at least one of a light-blocking member for absorbing light incident from the outside, a buffer member for absorbing impact from the outside, and a heat-dissipating member for efficiently dissipating heat from the display panel (100).

[0189] A light-blocking member may be placed at the bottom of the display panel (100). The light-blocking member blocks the transmission of light, thereby preventing components placed at the bottom of the light-blocking member, such as a circuit board (300), from being viewed from the top of the display panel (100). The light-blocking member may include a light-absorbing material, such as a black pigment or a black dye.

[0190] A buffer member may be placed under the light-shielding member. The buffer member absorbs external impact to prevent the display panel (100) from being damaged. The buffer member may be formed of a single layer or multiple layers. For example, the buffer member may be formed of a polymer resin such as polyurethane, polycarbonate, polypropylene, polyethylene, etc., or may include an elastic material such as a sponge formed by foaming rubber, a urethane-based material, or an acrylic-based material.

[0191] A heat dissipation member may be placed under the buffer member. The heat dissipation member may include a first heat dissipation layer including graphite or carbon nanotubes, and a second heat dissipation layer formed of a metal thin film, such as copper, nickel, ferrite, or silver, capable of shielding electromagnetic waves and having excellent thermal conductivity.

[0192] The circuit board (300) can be bent to the lower side of the display panel (100) as shown in FIG. 7B. The circuit board (300) can be attached to the lower surface of the panel lower cover (PB) by an adhesive member (310). The adhesive member (310) can be a pressure-sensitive adhesive.

[0193] FIG. 9 is a cross-sectional view showing an example of a display area of ​​a display panel according to one embodiment.

[0194] Referring to FIG. 9, a display panel (100) according to one embodiment may be an organic light-emitting display panel having a light-emitting element (LEL) including an organic light-emitting layer (172).

[0195] The display layer (DISL) may include a thin film transistor layer (TFTL) including a plurality of thin film transistors and an light emitting element layer (EML) including a plurality of light emitting elements.

[0196] The first buffer film (BF1) may be disposed on the substrate (SUB). The first buffer film (BF1) may be formed of an inorganic material such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, and an aluminum oxide layer. Alternatively, the first buffer film (BF1) may be formed as a multi-film in which a plurality of layers of a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, and an aluminum oxide layer are alternately laminated.

[0197] An active layer including a channel region (TCH), a source region (TS), and a drain region (TD) of a thin film transistor (TFT) may be disposed on a first buffer film (BF1). The active layer may be formed of polycrystalline silicon, single-crystalline silicon, low-temperature polycrystalline silicon, amorphous silicon, or an oxide semiconductor material. When the active layer includes polycrystalline silicon or an oxide semiconductor material, the source region (TS) and the drain region (TD) in the active layer may be conductive regions doped with ions or impurities to have conductivity.

[0198] A gate insulating film (130) may be disposed on an active layer of a thin film transistor (TFT). The gate insulating film (130) may be formed of an inorganic film, for example, a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.

[0199] A gate electrode (TG) of a thin film transistor (TFT), a first capacitor electrode (CAE1) of a capacitor (Cst), and a first gate metal layer including scan lines may be disposed on a gate insulating film (130). The gate electrode (TG) of the thin film transistor (TFT) may overlap a channel region (TCH) in a third direction (Z-axis direction). In one embodiment, the third direction (Z-axis direction) may be a thickness direction of the display panel (100) or a thickness direction of the substrate (SUB). The third direction (Z-axis direction) may be orthogonal to a plane parallel to the display area (DA) of the display panel (100). The first gate metal layer may be formed as a single layer or multiple layers made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0200] A first interlayer insulating film (141) may be disposed on the first gate metal layer. The first interlayer insulating film (141) may be formed of an inorganic film, for example, a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. The first interlayer insulating film (141) may include a plurality of inorganic films.

[0201] A second gate metal layer including a second capacitor electrode (CAE2) of a capacitor (Cst) may be disposed on a first interlayer insulating film (141). The second capacitor electrode (CAE2) may overlap the first capacitor electrode (CAE1) in the third direction (Z-axis direction). Therefore, the capacitor (Cst) may be formed by the first capacitor electrode (CAE1), the second capacitor electrode (CAE2), and the inorganic insulating dielectric film disposed therebetween and serving as a dielectric film. The second gate metal layer may be formed as a single layer or multiple layers made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0202] A second interlayer insulating film (142) may be disposed on the second gate metal layer and the first interlayer insulating film (141). The second interlayer insulating film (142) may be formed of an inorganic film, for example, a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. The second interlayer insulating film (142) may include a plurality of inorganic films.

[0203] A first data metal layer including a first connection electrode (CE1) and data lines may be disposed on a second interlayer insulating film (142). The first connection electrode (CE1) may be connected to a drain region (TD) through a first contact hole (CT1) penetrating the gate insulating film (130), the first interlayer insulating film (141), and the second interlayer insulating film (142). The first data metal layer may be formed as a single layer or multiple layers made of one or an alloy of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu).

[0204] A first organic film (160) for leveling the steps caused by thin film transistors (TFTs) may be disposed on the first data metal layer including the first connection electrode (CE1) and the second interlayer insulating film (142). The first organic film (160) may be formed of an organic film such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

[0205] A second data metal layer including a second connection electrode (CE2) may be disposed on a first organic film (160). The second data metal layer may be connected to the first connection electrode (CE1) through a second contact hole (CT2) penetrating the first organic film (160). The second data metal layer may be formed as a single layer or multiple layers made of one or an alloy of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu).

[0206] The second organic film (180) may be disposed on the second data metal layer including the second connection electrode (CE2) and the first organic film (160). The second organic film (180) may be formed of an organic film such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

[0207] Meanwhile, the second data metal layer including the second connection electrode (CE2) and the second organic film (180) may be omitted.

[0208] An emission layer (EML) is arranged on a thin film transistor layer (TFTL). The emission layer (EML) may include emission elements (LELs) and a bank (190).

[0209] Each of the light-emitting elements (LEL) may include a pixel electrode (171), a light-emitting layer (172), and a common electrode (173). Each of the light-emitting areas (EA) represents a region in which the pixel electrode (171), the light-emitting layer (172), and the common electrode (173) are sequentially stacked, and holes from the pixel electrode (171) and electrons from the common electrode (173) combine with each other in the light-emitting layer (172) to emit light. In this case, the pixel electrode (171) may be an anode electrode, and the common electrode (173) may be a cathode electrode.

[0210] A pixel electrode layer including a pixel electrode (171) may be formed on a second organic film (180). The pixel electrode (171) may be connected to a second connection electrode (CE2) through a third contact hole (CT3) penetrating the second organic film (180). The pixel electrode layer may be formed as a single layer or multiple layers made of one or an alloy of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu).

[0211] In a top emission structure that emits light in the direction of the common electrode (173) based on the light-emitting layer (172), the pixel electrode (171) may be formed as a single layer of any one of molybdenum (Mo), titanium (Ti), copper (Cu), and aluminum (Al), or may be formed as any one of a laminated structure of aluminum and titanium (Ti / Al / Ti), a laminated structure of aluminum and ITO (ITO / Al / ITO), an APC alloy, and a laminated structure of APC alloy and ITO (ITO / APC / ITO) to increase reflectivity. The APC alloy is an alloy of silver (Ag), palladium (Pd), and copper (Cu).

[0212] The bank (190) serves to define the light-emitting areas (EA) of the pixels. To this end, the bank (190) may be formed to expose a portion of the pixel electrode (171) on the second organic film (180). The bank (190) may cover the edge of the pixel electrode (171). The bank (190) may be positioned within the third contact hole (CT3). That is, the third contact hole (CT3) may be filled by the bank (190). The bank (190) may be formed of an organic film such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

[0213] A spacer (191) may be placed on the bank (190). The spacer (191) may serve to support a mask during the process of manufacturing the light-emitting layer (172). The spacer (191) may be formed of an organic film such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

[0214] A light-emitting layer (172) is formed on the pixel electrode (171). The light-emitting layer (172) may include an organic material and emit light of a predetermined color. For example, the light-emitting layer (172) may include a hole transport layer, an organic material layer, and an electron transport layer. The organic material layer may include a host and a dopant. The organic material layer may include a material that emits a predetermined light, and may be formed using a phosphorescent material or a fluorescent material.

[0215] A common electrode (173) is formed on the light-emitting layer (172), the bank (190), and the spacer (191). The common electrode (173) may be formed to cover the light-emitting layer (172), the bank (190), and the spacer (191). As shown in Fig. 14, the common electrode (173) may be a common layer commonly formed in the light-emitting areas (EA1, EA2, EA3, EA4). A capping layer may be formed on the common electrode (173).

[0216] In the upper light-emitting structure, the common electrode (173) may be formed of a transparent conductive material (TCO) that can transmit light, such as ITO or IZO, or a semi-transmissive conductive material, such as magnesium (Mg), silver (Ag), or an alloy of magnesium (Mg) and silver (Ag). When the common electrode (173) is formed of a semi-transmissive metallic material, the light-emitting efficiency may be increased by the micro cavity.

[0217] An encapsulation layer (ENC) may be formed on the light-emitting element layer (EML). The encapsulation layer (ENC) may include at least one inorganic film (TFE1, TFE3) to prevent oxygen or moisture from penetrating into the light-emitting element layer (EML). In addition, the encapsulation layer (ENC) may include at least one organic film (TFE2) to protect the light-emitting element layer (EML) from foreign substances such as dust. For example, the encapsulation layer (ENC) may include a first encapsulation inorganic film (TFE1), an encapsulation organic film (TFE2), and a second encapsulation inorganic film (TFE3).

[0218] The first encapsulating inorganic film (TFE1) may be disposed on the common electrode (173), the encapsulating organic film (TFE2) may be disposed on the first encapsulating inorganic film (TFE1), and the second encapsulating inorganic film (TFE3) may be disposed on the encapsulating organic film (TFE2). The first encapsulating inorganic film (TFE1) and the second encapsulating inorganic film (TFE3) may be formed as a multi-film in which one or more inorganic films of a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, and an aluminum oxide layer are alternately laminated. The encapsulating organic film (TFE2) may be an organic film such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

[0219] A sensor electrode layer (SENL) is disposed on an encapsulation layer (ENC). The sensor electrode layer (SENL) may include sensor electrodes (TE, RE).

[0220] The second buffer film (BF2) may be disposed on the encapsulation layer (ENC). The second buffer film (BF2) may include at least one inorganic film. For example, the second buffer film (BF2) may be formed as a multi-film in which one or more inorganic films of a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, and an aluminum oxide layer are alternately laminated. The second buffer film (BF2) may be omitted.

[0221] The first connecting portions (BE1) may be disposed on the second buffer film (BF2). The first connecting portions (BE1) may be formed as a single layer of any one of molybdenum (Mo), titanium (Ti), copper (Cu), and aluminum (Al), or may be formed as any one of a stacked structure of aluminum and titanium (Ti / Al / Ti), a stacked structure of aluminum and ITO (ITO / Al / ITO), an APC alloy, and a stacked structure of an APC alloy and ITO (ITO / APC / ITO).

[0222] A first sensor insulating film (TINS1) may be disposed on the first connecting portions (BE1). The first sensor insulating film (TINS1) may be formed of an inorganic film, for example, a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.

[0223] Sensor electrodes, i.e., driving electrodes (TEs) and sensing electrodes (REs), may be disposed on a first sensor insulating film (TNIS1). In addition, dummy patterns may be disposed on the first sensor insulating film (TNIS1). The driving electrodes (TEs), sensing electrodes (REs), and dummy patterns do not overlap with the light-emitting areas (EA). The driving electrodes (TEs), sensing electrodes (REs), and dummy patterns may be formed as a single layer of any one of molybdenum (Mo), titanium (Ti), copper (Cu), and aluminum (Al), or as a stacked structure of aluminum and titanium (Ti / Al / Ti), a stacked structure of aluminum and ITO (ITO / Al / ITO), an APC alloy, and a stacked structure of an APC alloy and ITO (ITO / APC / ITO).

[0224] A second sensor insulating film (TINS2) may be disposed on the driving electrodes (TE), the sensing electrodes (RE), the dummy patterns, and the first sensor insulating film (TINS1). The second sensor insulating film (TINS2) may include at least one of an inorganic film and an organic film. The inorganic film may be a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. The organic film may be an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

[0225] Fig. 10 is a cross-sectional view showing an example of a display area of ​​a display panel according to another embodiment.

[0226] Referring to FIG. 10, a display panel (100) according to one embodiment may be a light emitting diode display panel having a light emitting element (LEL_1) including a light emitting diode element (172_1) extending in a third direction (Z-axis direction). The light emitting diode element (172_1) may have a length or size in micrometers and may be a micro light emitting diode made of an inorganic material. In this case, the display panel (100) according to one embodiment may be a micro light emitting diode display panel.

[0227] The display panel (100) according to one embodiment includes a light emitting diode element (172_1) made of an inorganic material, and therefore does not require a sealing structure. Therefore, the display panel (100) according to one embodiment may not include an encapsulating layer (ENC).

[0228] In addition, when the light emitting diode elements (172_1) of the display panel (100) according to one embodiment emit the same light, a color control layer (CCL) may be included. When the light emitting diode elements (172_1) of the display panel (100) according to one embodiment are divided into elements that emit multiple colors, the color control layer (CCL) may be omitted.

[0229] Furthermore, in Fig. 10, the polarizing film (PF) and the cover window (CW) are deleted for convenience of explanation. The polarizing film (PF) may be placed on the color control layer (CCL), and the cover window (CW) may be placed on the polarizing film (PF).

[0230] The display layer (DISL) of the display panel (100) according to one embodiment includes a thin film transistor layer (TFTL), a light emitting element layer (EML), and a color control layer (CCL). The thin film transistor layer (TFTL) illustrated in FIG. 10 is substantially the same as the thin film transistor layer (TFTL) described in conjunction with FIG. 9, and therefore, a description of the thin film transistor layer (TFTL) is omitted in FIG. 10.

[0231] The light emitting element layer (EML) may include light emitting elements (LEL_1), a bank (190), a third organic film (191), and a fourth organic film (192).

[0232] Each of the light-emitting elements (LEL_1) may include a pixel electrode (171_1), a light-emitting diode element (172_1), and a common electrode (173_1). Since the pixel electrode (171_1) is substantially the same as the pixel electrode (171) described in connection with FIG. 9, a description of the pixel electrode (171_1) is omitted in FIG. 10.

[0233] The bank (190) may be arranged to cover the edge of the pixel electrode (171_1). The bank (190) may be formed of an organic film such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin. The bank (190) may include a light-blocking material to prevent light from a light-emitting diode element (172_1) of a sub-pixel from propagating to an adjacent sub-pixel. For example, the bank (190) may include an inorganic black pigment such as carbon black or an organic black pigment.

[0234] A plurality of light emitting diode elements (172_1) may be arranged on the pixel electrode (171_1) that is exposed and not covered by the bank (190). Each of the plurality of light emitting diode elements (172_1) is exemplified as a vertical micro LED extending in the third direction (Z-axis direction). In this case, each of the plurality of light emitting diode elements (172_1) may have a rectangular or reverse taper cross-sectional shape. However, each of the plurality of light emitting diode elements (172_1) is not limited to being a vertical micro LED, and may be a flip-type micro LED.

[0235] Each of the plurality of light-emitting diode elements (172_1) may be formed of an inorganic material such as GaN. Each of the plurality of light-emitting diode elements (172_1) may have a length in a first direction (X-axis direction), a length in a second direction (Y-axis direction), and a length in a third direction (Z-axis direction) of several to several hundred μm, respectively. For example, each of the plurality of light-emitting diode elements (172_1) may have a length in a first direction (X-axis direction), a length in a second direction (Y-axis direction), and a length in a third direction (Z-axis direction) of approximately 100 μm or less, respectively. However, the embodiment of the present specification is not limited thereto, and the plurality of light-emitting diode elements (172_1) may have a nanometer size.

[0236] Each of the plurality of light emitting diode elements (172_1) may be grown and formed on a semiconductor substrate such as a silicon wafer. Each of the plurality of light emitting diode elements (172_1) may be transferred directly from the silicon wafer onto the pixel electrode (171_1) of the substrate (SUB). Alternatively, each of the plurality of light emitting diode elements (172_1) may be transferred onto the pixel electrode (171_1) of the substrate (SUB) through an electrostatic method using an electrostatic head or a stamp method using an elastic polymer material such as PDMS or silicon as a transfer substrate.

[0237] The light emitting diode element (172_1) may have a length or size in micrometers or nanometers, and may be an inorganic light emitting diode made of an inorganic material. The light emitting diode element (172_1) may have a shape extending in one direction. Each of the plurality of light emitting diode elements (172_1) may have a shape such as a cylinder, a rod, a wire, a tube, etc. However, the shape of the light emitting diode element (172_1) is not limited thereto, and may have a shape of a polygonal column such as a cube, a rectangular parallelepiped, a hexagonal column, or a shape extending in one direction but having an outer surface that is partially inclined.

[0238] Each of the plurality of light emitting diode elements (172_1) may include a contact electrode (CTE), a first semiconductor layer (SEM1), an electron blocking layer (EBL), an active layer (MQW), a superlattice layer (SLT), and a second semiconductor layer (SEM2), as shown in FIG. 11.

[0239] The contact electrode (CTE) may be disposed on the pixel electrode (171_1). The contact electrode (CTE) and the pixel electrode (171_1) may be melt-bonded by heat and pressure. Alternatively, the contact electrode (CTE) and the pixel electrode (171_1) may be bonded to each other through a conductive adhesive material such as an anisotropic conductive film or an anisotropic conductive adhesive. Alternatively, the contact electrode (CTE) and the pixel electrode (171_1) may be bonded to each other through a soldering process. For example, the contact electrode (CTE) may include at least one of gold (Au), copper (Cu), aluminum (Al), and tin (Sn).

[0240] The first semiconductor layer (SEM1) may be disposed on the contact electrode (CTE). The first semiconductor layer (SEM1) may be formed of GaN doped with a first conductive dopant such as Mg, Zn, Ca, Sr, or Ba.

[0241] An electron blocking layer (EBL) may be disposed on the first semiconductor layer (SEM1). The electron blocking layer (EBL) may be a layer that suppresses or prevents excessive electrons from flowing into the active layer (MQW). For example, the electron blocking layer (EBL) may be p-AlGaN doped with p-type magnesium. The electron blocking layer (EBL) may be omitted.

[0242] The active layer (MQW) can be disposed on the electron blocking layer (EBL). The active layer (MQW) can emit light by the combination of electron-hole pairs in response to an electric signal applied through the first semiconductor layer (SEM1) and the second semiconductor layer (SEM2).

[0243] The active layer (MQW) may include a material having a single or multiple quantum well structure. When the active layer (MQW) includes a material having a multiple quantum well structure, it may have a structure in which a plurality of well layers and barrier layers are alternately stacked. In this case, the well layers may be formed of InGaN, and the barrier layer may be formed of GaN or AlGaN, but is not limited thereto. Alternatively, the active layer (MQW) may have a structure in which a semiconductor material having a large band gap energy and a semiconductor material having a small band gap energy are alternately stacked, or may include different group III to group V semiconductor materials depending on the wavelength of the emitted light.

[0244] When the active layer (MQW) includes InGaN, the color of the emitted light may vary depending on the content of indium (In). For example, as the content of indium (In) increases, the wavelength band of the light emitted from the active layer (MQW) may shift toward a red wavelength band, and as the content of indium (In) decreases, the wavelength band of the light emitted from the active layer (MQW) may shift toward a blue wavelength band. For example, the content of indium (In) in the active layer (MQW) of a light-emitting diode element (172_1) that emits light in a blue wavelength band may be approximately 10 wt% to 20 wt%.

[0245] A superlattice layer (SLT) may be disposed on the active layer (MQW). The superlattice layer (SLT) may be a layer for relieving stress between the second semiconductor layer (SEM2) and the active layer (MQW). For example, the superlattice layer (SLT) may be formed of InGaN or GaN. The superlattice layer (SLT) may be omitted.

[0246] The second semiconductor layer (SEM2) may be disposed on the superlattice layer (SLT). The second semiconductor layer (SEM2) may be doped with a second conductivity type dopant, such as Si, Ge, Sn, etc. For example, the second semiconductor layer (SEM2) may be n-GaN doped with n-type Si.

[0247] A third organic film (191) may be disposed on the pixel electrode (171_1) that is not covered by the bank (190) and the plurality of light-emitting diode elements (172_1). The third organic film (191) may be disposed to cover a side surface and a portion of the upper surface of the bank (190). The height of the third organic film (191) may be greater than the height of the bank (190). The third organic film (191) may be disposed on a portion of the side surface of each of the plurality of light-emitting diode elements (172_1). The height of the third organic film (191) may be less than the height of each of the plurality of light-emitting diode elements (172_1). The third organic film (191) may be formed of an organic film such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

[0248] A fourth organic film (192) may be disposed on the third organic film (191) to partially cover side surfaces and an upper surface of the third organic film. The fourth organic film (192) may be disposed on a portion of a side surface of each of the plurality of light-emitting diode elements (172_1). The fourth organic film (192) may partially cover an upper surface of the bank (190). The sum of the height of the third organic film (191) and the height of the fourth organic film (192) may be smaller than the height of each of the plurality of light-emitting diode elements (172_1). The fourth organic film (192) may be formed of an organic film such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

[0249] The third organic film (191) and the fourth organic film (192) are layers for leveling the steps caused by the plurality of light-emitting diode elements (172_1). If the height of each of the plurality of light-emitting diode elements (172_1) is similar to the height of the third organic film (191), the fourth organic film (192) may be omitted.

[0250] The common electrode (173_1) may be disposed on the upper surface of each of the plurality of light-emitting diode elements (172_1) and the upper surface of the fourth organic film (192). The common electrode (173_1) may be disposed on the bank (190) that is exposed and not covered by the third organic film (191) and the fourth organic film (192). The common electrode (173_1) may be a common layer formed in common on the first sub-pixel (SPX1), the second sub-pixel (SPX2), and the third sub-pixel (SPX3). The common electrode (173_1) may be made of a transparent metal material (TCO, Transparent Conductive Material), such as ITO (Indium Tin Oxide) and IZO (Indium Zinc Oxide), which can transmit light.

[0251] The color control layer (CCL) may include a first capping layer (CPL1), a light-shielding layer (BM), a first light conversion layer (QDL1), a second light conversion layer (QDL2), a light-transmitting layer (TPL), a second capping layer (CPL2), a fifth organic film (193), a plurality of color filters (CF1, CF2, CF3), and a sixth organic film (194).

[0252] The first capping layer (CPL1) may be disposed on the common electrode (173_1). The first capping layer (CPL1) may be formed of an inorganic film, for example, a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.

[0253] A light-shielding layer (BM), a first light conversion layer (QDL1), a second light conversion layer (QDL2), and a light-transmitting layer (TPL) may be disposed on a first capping layer (CPL1). The first light conversion layer (QDL1), the second light conversion layer (QDL2), and the light-transmitting layer (TPL) may be formed by the partitioning of the light-shielding layer (BM). Therefore, in a first sub-pixel (SPX1) that outputs a first light, a first light conversion layer (QDL1) may be disposed on the first capping layer (CPL1), in a second sub-pixel (SPX2) that outputs a second light, a second light conversion layer (QDL2) may be disposed on the first capping layer (CPL1), and in a third sub-pixel (SPX3) that outputs a third light, a light-transmitting layer (TPL) may be disposed on the first capping layer (CPL1). The shading layer (BM) may overlap the bank (190) in the sixth direction (DR6) and may not overlap the plurality of light emitting diode elements (172_2).

[0254] The first light conversion layer (QDL1) can convert a portion of the light in the blue wavelength band incident from the light emitting diode element (172_2) into light in the red wavelength band. The first light conversion layer (QDL1) can include a first base resin (BRS1) and a first wavelength conversion particle (WCP1). The first base resin (BRS1) can include a light-transmitting organic material. For example, the first base resin (BRS1) can include an epoxy-based resin, an acrylic resin, a cardo-based resin, an imide-based resin, or the like. The first wavelength conversion particle (WCP1) can convert a portion of the light in the blue wavelength band incident from the light emitting diode element (172_2) into light in the red wavelength band. The first wavelength conversion particle (WCP1) can include a quantum dot (QD), a quantum rod, a fluorescent material, or a phosphorescent material.

[0255] The second light conversion layer (QDL2) can convert a portion of the light in the blue wavelength band incident from the light emitting diode element (172_2) into light in the green wavelength band. It can include a second base resin (BRS2) and a second wavelength conversion particle (WCP2). The second base resin (BRS2) can include a light-transmitting organic material. For example, the second base resin (BRS2) can include an epoxy-based resin, an acrylic resin, a cardo-based resin, an imide-based resin, or the like. The second wavelength conversion particle (WCP2) can convert a portion of the light in the blue wavelength band incident from the light emitting diode element (172_2) into light in the green wavelength band. The second wavelength conversion particle (WCP2) can include a quantum dot (QD), a quantum rod, a fluorescent material, or a phosphorescent material.

[0256] The light transmitting layer (TPL) may include a light transmitting organic material. For example, the light transmitting layer (TPL) may include an organic film such as an epoxy resin, an acrylic resin, a cardo resin, or an imide resin.

[0257] The light-blocking layer (BM) may include a first light-blocking layer (BM1) and a second light-blocking layer (BM2) that are sequentially laminated. The length of the first light-blocking layer (BM1) in the first direction (X-axis direction) or the length of the second direction (Y-axis direction) may be wider than the length of the second light-blocking layer (BM2) in the first direction (X-axis direction) or the length of the second light-blocking layer (BM2) in the second direction (Y-axis direction). The first light-blocking layer (BM1) and the second light-blocking layer (BM2) may be formed of an organic film such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin. The first light-blocking layer (BM1) and the second light-blocking layer (BM2) may include a light-blocking material to prevent light from a light-emitting diode element (172_2) of a sub-pixel from propagating to an adjacent sub-pixel. For example, the first shading layer (BM1) and the second shading layer (BM2) may include an inorganic black pigment such as carbon black or an organic black pigment.

[0258] A second capping layer (CPL2) may be disposed on the light-shielding layer (BM), the first light conversion layer (QDL1), the second light conversion layer (QDL2), and the light-transmitting layer (TPL). The second capping layer (CPL2) may be formed of an inorganic film, for example, a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. The light-shielding layer (BM), the first light conversion layer (QDL1), the second light conversion layer (QDL2), and the light-transmitting layer (TPL) may be encapsulated by the first capping layer (CPL1) and the second capping layer (CPL2).

[0259] A fifth organic film (193) may be disposed on the second capping layer (CPL2). The fifth organic film (193) may be formed of any one of acrylic resin, epoxy resin, phenolic resin, polyamide resin, and polyimide resin.

[0260] A plurality of color filters (CF1, CF2, CF3) may be arranged on the fifth organic film (193). The plurality of color filters (CF1, CF2, CF3) may include first color filters (CF1), second color filters (CF2), and third color filters (CF3).

[0261] Each of the first color filters (CF1) arranged in the first sub-pixel (SPX1) can transmit light in the red wavelength band and absorb or block light in the blue wavelength band. Therefore, each of the first color filters (CF1) can transmit light in the red wavelength band converted by the first light conversion layer (QDL1) among the light in the blue wavelength band emitted from the light emitting diode element (172_2), and absorb or block light in the blue wavelength band that is not converted by the first light conversion layer (QDL1). Therefore, the first sub-pixel (SPX1) can emit light in the red wavelength band.

[0262] Each of the second color filters (CF2) arranged in the second sub-pixel (SPX2) can transmit light in the green wavelength band and absorb or block light in the blue wavelength band. Therefore, each of the second color filters (CF2) can transmit light in the green wavelength band converted by the second light conversion layer (QDL2) among the light in the blue wavelength band emitted from the light emitting diode element (172_2), and absorb or block light in the blue wavelength band that is not converted by the second light conversion layer (QDL2). Therefore, the second sub-pixel (SPX2) can emit light in the green wavelength band.

[0263] Each of the third color filters (CF3) arranged in the third sub-pixel (SPX3) can transmit light in the blue wavelength band. Therefore, each of the third color filters (CF3) can transmit light in the blue wavelength band emitted from the light-emitting diode element (172_2) passing through the light-transmitting layer (TPL). Therefore, the third sub-pixel (SPX3) can emit light in the blue wavelength band.

[0264] A sixth organic film (194) for planarization may be disposed on a plurality of color filters (CF1, CF2, CF3). The sixth organic film (194) may be formed of an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

[0265] Fig. 12 is a cross-sectional view showing an example of a display area of ​​a display panel according to another embodiment.

[0266] Referring to FIG. 12, a display panel (100) according to one embodiment may be a liquid crystal display panel having a liquid crystal layer (LCL) including liquid crystals (LC).

[0267] A gate metal layer including a scan line, a first capacitor electrode (CAE1), and a gate electrode (GE) may be disposed on a substrate (SUB). The gate metal layer may include one selected from molybdenum (Mo), aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), titanium (Ti), tantalum (Ta), tungsten (W), and copper (Cu), or an alloy thereof. Alternatively, the gate conductive layer may have a two-layer structure of molybdenum / aluminum-neodymium, molybdenum / aluminum, or copper / titanium.

[0268] A gate insulating film (130) may be disposed on a gate metal layer. The gate insulating film (130) may include silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, tantalum oxide, hafnium oxide, zirconium oxide, titanium oxide, or a combination thereof.

[0269] An active layer (ACT) may be disposed on a gate insulating film (GI). The active layer (ACT) may include a channel region (CH) disposed between a source electrode (SE) and a drain electrode (DE) in a first direction (X-axis direction). The channel region (CH) may overlap with a gate electrode (GE).

[0270] The active layer (ACT) may include a silicon-based semiconductor material, such as amorphous silicon, polycrystalline silicon, or single-crystalline silicon. Alternatively, the active layer (ACT) may include an oxide semiconductor.

[0271] An ohmic contact layer may be disposed on the active layer (ACT). Specifically, the ohmic contact layer may be disposed between the source electrode (SE) and the active layer (ACT) and between the drain electrode (DE) and the active layer (ACT). The ohmic contact layer may lower the Schottky barrier between the metal and silicon, i.e., the work function, thereby reducing contact resistance. The ohmic contact layer may be formed of amorphous silicon heavily doped with n-type impurities.

[0272] A data metal layer including a data line, a source electrode (SE), a drain electrode (DE), and a first connection electrode (CE1) may be disposed on a gate insulating film (130). The source electrode (SE) and the drain electrode (DE) may be disposed on an active layer (ACT). The source electrode (SE) and the first connection electrode (CE1) may be formed integrally. The data metal layer may include any one selected from molybdenum (Mo), aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), titanium (Ti), tantalum (Ta), tungsten (W), and copper (Cu), or an alloy thereof. Alternatively, the data metal layer may have a two-layer structure of molybdenum / aluminum-neodymium, molybdenum / aluminum or copper / titanium, or a three-layer structure of molybdenum / titanium / molybdenum or molybdenum / aluminum / molybdenum.

[0273] The first organic film (160) may be disposed on the data metal layer and the active layer (ACT). The first organic film (160) may include an organic insulating material or an inorganic insulating material. For example, the first organic film (160) may be an overcoat layer made of an organic insulating material.

[0274] A pixel electrode layer including a pixel electrode (171_2) may be disposed on a first organic film (160). The pixel electrode (171_2) may be connected to a first connection electrode (CE1) through a contact hole (CT) penetrating the first organic film (160). The pixel electrode layer may be made of a transparent material that allows light to pass through. For example, the pixel electrode layer may be made of, but is not limited to, indium tin oxide (ITO), indium zinc oxide (IZO), or indium tin zinc oxide (ITZO), and any material that is transparent and conductive may be used.

[0275] The color filter substrate (CSUB) facing the substrate (SUB) may be a transparent insulating substrate similar to the substrate (SUB). For example, the color filter substrate (CSUB) may be made of glass.

[0276] A light-shielding layer (BM) may be disposed on one surface of a color filter substrate (CSUB) facing the substrate (SUB). The light-shielding layer (BM) may overlap with a thin film transistor (TFT_1) and a contact hole (CT). The light-shielding layer (BM) may include a light-shielding pigment such as carbon black or an opaque metal material such as chromium (Cr). Alternatively, the light-shielding layer (BM) may include a photosensitive organic material. The light-shielding layer (BM) may also be disposed on the substrate (SUB).

[0277] A common electrode (173_2) may be arranged on one surface of a light-shielding layer (BM) facing the substrate (SUB). The common electrode (173) may be made of a transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), or indium tin zinc oxide (ITZO). The common electrode (173) may be formed entirely over the entire surface of the color filter substrate (CSUB).

[0278] A liquid crystal layer (LCL) may be disposed between the substrate (SUB) and the color filter substrate (CSUB). The liquid crystal layer (LCL) may include liquid crystals (LC) having dielectric anisotropy. When a data voltage is applied to the pixel electrode (171_2) and a common voltage is applied to the common electrode (173_2), an electric field may be formed between the pixel electrode (171_2) and the common electrode (173_2). The arrangement of the liquid crystals (LC) of the liquid crystal layer (LCL) may change depending on the electric field between the pixel electrode (171_2) and the common electrode (173_2), thereby controlling the transmittance of light passing through the liquid crystal layer (LCL).

[0279] Specifically, when an electric field is formed between the pixel electrode (171_2) and the common electrode (173_2), the liquid crystals (LC) can adjust the phase delay value of light passing through the liquid crystal layer (LCL) by rotating in a specific direction. Depending on how much the phase delay value changes due to the rotation of the liquid crystals (LC), the amount of light passing through the lower polarizing film disposed on the lower surface of the substrate (SUB) and passing through the upper polarizing film disposed on the upper surface of the color filter substrate (CSUB) can change. Therefore, the transmittance of light passing through the liquid crystal layer (LCL) can be controlled.

[0280] As illustrated in FIGS. 9, 10, and 12, the display panel (100) according to one embodiment may be an organic light emitting display panel, a micro light emitting diode display panel, a nano light emitting diode display panel, or a liquid crystal display panel. Alternatively, the display panel (100) according to one embodiment may be an electroluminescent display panel using an electroluminescent element or an electrochromic display panel using an electrochromic element. For convenience of explanation, the following description will focus on the display panel (100) according to one embodiment being an organic light emitting display panel.

[0281] Fig. 13 is a layout diagram showing in detail an example of area A of Fig. 2. Fig. 13 is a layout diagram showing a display area (DA) and a non-display area (NDA) arranged on a first side, for example, the right side, of a display panel (100) according to one embodiment.

[0282] Referring to FIG. 13, the display area (DA) may include a plurality of light-emitting areas (EA1, EA2, EA3, EA4). The plurality of light-emitting areas (EA1, EA2, EA3, EA4) may include a first light-emitting area (EA1) that emits light of a first color, a second light-emitting area (EA2) and a fourth light-emitting area (EA4) that emit light of a second color, and a third light-emitting area (EA3) that emits light of a third color. For example, the light of the first color may be light in a red wavelength band of approximately 600 nm to 750 nm, the light of the second color may be light in a green wavelength band of approximately 480 nm to 560 nm, and the light of the third color may be light in a blue wavelength band of approximately 370 nm to 460 nm, but the embodiments of the present specification are not limited thereto.

[0283] Although Fig. 13 illustrates that the second light-emitting area (EA2) and the fourth light-emitting area (EA4) emit light of the same color, i.e., light of the second color, the embodiment of the present specification is not limited thereto. The second light-emitting area (EA2) and the fourth light-emitting area (EA4) may emit light of different colors. For example, the second light-emitting area (EA2) may emit light of the second color, and the fourth light-emitting area (EA4) may emit light of the fourth color.

[0284] In addition, although FIG. 13 illustrates that each of the first light-emitting areas (EA1), the second light-emitting areas (EA2), the third light-emitting areas (EA3), and the fourth light-emitting areas (EA4) has a rectangular planar shape, the embodiment of the present specification is not limited thereto. Each of the first light-emitting areas (EA1), the second light-emitting areas (EA2), the third light-emitting areas (EA3), and the fourth light-emitting areas (EA4) may have a polygonal, circular, or elliptical planar shape other than a square shape. In addition, the first light-emitting areas (EA1), the second light-emitting areas (EA2), the third light-emitting areas (EA3), and the fourth light-emitting areas (EA4) may have the same or different shapes. For example, the second light-emitting areas (EA2) and the fourth light-emitting areas (EA4) may have the same size, but the first light-emitting areas (EA1) and the third light-emitting areas (EA3) may have different sizes and shapes. Additionally, each of the first light-emitting areas (EA1) and the third light-emitting areas (EA3) may have a different size and shape from the second light-emitting areas (EA2) and the fourth light-emitting areas (EA4).

[0285] Additionally, as shown in Fig. 13, the area of ​​the third light-emitting area (EA3) may be the largest, and the areas of the second light-emitting area (EA2) and the fourth light-emitting area (EA4) may be the smallest. The area of ​​the second light-emitting area (EA2) and the area of ​​the fourth light-emitting area (EA4) may be the same.

[0286] The second light-emitting areas (EA2) and the fourth light-emitting areas (EA4) may be arranged alternately in the first direction (X-axis direction). The second light-emitting areas (EA2) may be arranged in the second direction (Y-axis direction). The fourth light-emitting areas (EA4) may be arranged in the second direction (Y-axis direction). Each of the fourth light-emitting areas (EA4) may have a long side in the first diagonal direction (DD1) and a short side in the second diagonal direction (DD2), while each of the second light-emitting areas (EA2) may have a long side in the second diagonal direction (DD2) and a short side in the first diagonal direction (DD1). The first diagonal direction (DD1) refers to a diagonal direction between the first direction (X-axis direction) and the second direction (Y-axis direction), and the second diagonal direction (DD2) may be a direction orthogonal to the first diagonal direction (DD1).

[0287] The first light-emitting areas (EA1) and the third light-emitting areas (EA3) may be alternately arranged in a first direction (X-axis direction). The first light-emitting areas (EA1) may be arranged in a second direction (Y-axis direction). The third light-emitting areas (EA3) may be arranged in the second direction (Y-axis direction). Each of the first light-emitting areas (EA1) and the third light-emitting areas (EA3) may have a square planar shape, but the embodiment of the present specification is not limited thereto. In this case, each of the first light-emitting areas (EA1) and the third light-emitting areas (EA3) may include two sides that are parallel in a first diagonal direction (DD1) and two sides that are parallel in a second diagonal direction (DD2).

[0288] The non-display area (NDA) includes a first non-display area (NDA1) and a second non-display area (NDA2). The first non-display area (NDA1) may be an area where structures for driving pixels of the display area (DA) are arranged. The second non-display area (NDA2) may be arranged outside the first non-display area (NDA1). The second non-display area (NDA2) may be an edge area of ​​the non-display area (NDA). In addition, the second non-display area (NDA2) may be an edge area of ​​the display panel (100).

[0289] The first non-display area (NDA1) may include a scan driving circuit (SDC), a first power line (VSL), a first dam (DAM1), and a second dam (DAM2).

[0290] A scan driving circuit (SDC) may include a plurality of stages (STAs). The plurality of stages (STAs) may be respectively connected to scan lines (SLs) of a display area (DA) extending in a first direction (X-axis direction). That is, the plurality of stages (STAs) may be connected one-to-one to the scan lines (SLs) of the display area (DA) extending in the first direction (X-axis direction). The plurality of stages (STAs) may sequentially apply scan signals to the plurality of scan lines (SLs).

[0291] The first power wire (VSL) may be arranged outside the scan driver circuit (SDC). That is, the first power wire (VSL) may be arranged closer to the first side edge (EG1) of the display panel (100) than the scan driver circuit (SDC). The first power wire (VSL) may extend in the second direction (Y-axis direction) from the non-display area (NDA) on the right side of the display panel (100).

[0292] The first power line (VSL) can be electrically connected to the common electrode (173), thereby allowing the common electrode (173) to receive the first power voltage from the first power line (VSL).

[0293] The first dam (DAM1) and the second dam (DAM2) are structures for preventing the encapsulation organic film (TFE2) of the encapsulation layer (ENC) from overflowing to the first side edge (EG1) of the display panel (100). The first dam (DAM1) and the second dam (DAM2) may extend in the second direction (Y-axis direction) from the non-display area (NDA) on the right side of the display panel (100). The second dam (DAM2) may be arranged on the outside of the first dam (DAM1). The first dam (DAM1) may be arranged closer to the scan driving circuit (SDC) than the second dam (DAM2), and the second dam (DAM2) may be arranged closer to the first side edge (EG1) of the display panel (100) than the first dam (DAM1).

[0294] Although FIG. 13 illustrates that the first dam (DAM1) and the second dam (DAM2) are disposed on the first power line (VSL), the embodiments of the present specification are not limited thereto. For example, either the first dam (DAM1) or the second dam (DAM2) may not be disposed on the first power line (VSL). Alternatively, neither the first dam (DAM1) nor the second dam (DAM2) may be disposed on the first power line (VSL). In this case, the first dam (DAM1) and the second dam (DAM2) may be disposed outside the first power line (VSL1).

[0295] Although FIG. 13 illustrates that a display panel (100) according to one embodiment includes two dams (DAM1, DAM2), the embodiments of the present specification are not limited thereto. That is, a display panel (100) according to one embodiment may include three or more dams.

[0296] The second non-display area (NDA2) may include a crack dam (CRD). The crack dam (CRD) may extend in the second direction (Y-axis direction) from the non-display area (NDA) on the first side of the display panel (100), for example, on the right side. The width of the crack dam (CRD) may be approximately 30 μm or less.

[0297] Fig. 14 is a layout diagram showing in detail an example of area B of Fig. 2. Fig. 14 is a layout diagram showing a non-display area (NDA) arranged on a second side, for example, a lower side, of a display panel (100) according to one embodiment.

[0298] Referring to FIG. 14, the first non-display area (NDA1) may include a plurality of display pads (PDs) and a plurality of pad wirings (PDLs).

[0299] A plurality of display pads (PD) may be electrically connected to a circuit board (300) through a conductive adhesive such as an anisotropic conductive film and an anisotropic conductive adhesive. Each of the plurality of display pads (PD) may be connected to a pad wiring (PDL). The pad wiring (PDL) may connect the display pad (PD) and a driving pad connected to a driving circuit (200). The plurality of driving pads may be electrically connected to the driving circuit (200) through a conductive adhesive such as an anisotropic conductive film and an anisotropic conductive adhesive.

[0300] Fig. 15 is a layout diagram showing in detail an example of area C of Fig. 2. Fig. 15 is a layout diagram showing a display area (DA) and a non-display area (NDA) arranged on a third side, for example, a left side, of a display panel (100) according to one embodiment.

[0301] Area C of FIG. 15 may be substantially identical to the left-right symmetry of area A illustrated in FIG. 13. For example, area A of FIG. 13 and area C of FIG. 15 may be symmetrical with respect to an imaginary line extending in the second direction (Y-axis direction) passing through the center of the display panel (100). Therefore, a detailed description of FIG. 15 is omitted.

[0302] Fig. 16 is a layout diagram showing in detail an example of area D of Fig. 2. Fig. 16 is a layout diagram showing a display area (DA) and a non-display area (NDA) arranged on a fourth side, for example, an upper side, of a display panel (100) according to one embodiment.

[0303] Referring to FIG. 16, the first non-display area (NDA1) may include a first power line (VSL), a first dam (DAM1), and a second dam (DAM2). The first non-display area (NDA1) may not include a scan driving circuit (SDC).

[0304] A first power line (VSL) may extend in a first direction (X-axis direction) from a non-display area (NDA) on the upper side of the display panel (100). The first power line (VSL) may be electrically connected to a common electrode (173), thereby allowing the common electrode (173) to receive a first power voltage from the first power line (VSL).

[0305] The first dam (DAM1) and the second dam (DAM2) may extend in the first direction (X-axis direction) from the non-display area (NDA) on the upper side of the display panel (100). The second dam (DAM2) may be arranged outside the first dam (DAM1). The first dam (DAM1) may be arranged closer to the display area (DA) than the second dam (DAM2), and the second dam (DAM2) may be arranged closer to the fourth side edge (EG4) of the display panel (100) than the first dam (DAM1).

[0306] Although FIG. 16 illustrates that the first dam (DAM1) and the second dam (DAM2) are disposed on the first power line (VSL), the embodiments of the present specification are not limited thereto. For example, either the first dam (DAM1) or the second dam (DAM2) may not be disposed on the first power line (VSL). Alternatively, neither the first dam (DAM1) nor the second dam (DAM2) may be disposed on the first power line (VSL). In this case, the first dam (DAM1) and the second dam (DAM2) may be disposed outside the first power line (VSL1).

[0307] The second non-display area (NDA2) may include a crack dam (CRD). The crack dam (CRD) may be an outermost structure disposed at the outermost end on the fourth side of the display panel (100), for example, on the upper side. The crack dam (CRD) may extend in the first direction (X-axis direction) from the non-display area (NDA) on the fourth side of the display panel (100).

[0308] Fig. 17 is a cross-sectional view showing an example of a display panel cut along line X2-X2' of Fig. 13. Fig. 18 is a cross-sectional view showing an example of a display panel cut along line X3-X3' of Fig. 14. Fig. 19 is a cross-sectional view showing an example of a display panel cut along line X4-X4' of Fig. 15. Fig. 20 is a cross-sectional view showing an example of a display panel cut along line X5-X5' of Fig. 16.

[0309] FIG. 17 shows an example of a cross-section of a first side edge (EG1) corresponding to the right edge of the display panel (100), and FIG. 18 shows an example of a cross-section of a second side edge (EG2) corresponding to the lower edge of the display panel (100). FIG. 19 shows an example of a cross-section of a third side edge (EG3) corresponding to the left edge of the display panel (100), and FIG. 20 shows an example of a cross-section of a fourth side edge (EG4) corresponding to the upper edge of the display panel (100).

[0310] Referring to FIGS. 17 to 20, a crack dam (CRD) may be a structure for preventing cracks from occurring in a process of cutting a substrate (SUB) during a manufacturing process of a display device (10). The crack dam (CRD) may be an outermost structure disposed at the outermost portion of each of a first side edge (EG1), a third side edge (EG3), and a fourth side edge (EG4) of the display panel (100). The minimum distance from the crack dam (CRD) to the first side edge (EG1) of the display panel (100) may be approximately 130 μm or less. In addition, the minimum distance from the crack dam (CRD) to the third side edge (EG3) of the display panel (100) may be approximately 130 μm or less. In addition, the minimum distance from the crack dam (CRD) to the fourth side edge (EG4) of the display panel (100) may be approximately 130 μm or less.

[0311] The display pad (PD) may be an outermost structure positioned at the outermost edge (EG2) of the second side of the display panel (100). The minimum distance from the display pad (PD) to the second side edge (EG2) of the display panel (100) may be approximately 80 μm or less.

[0312] Meanwhile, when cutting the substrate (SUB) of the display panel (100) by spraying an etchant after irradiating a laser beam during the manufacturing process of the display panel (100), at least some areas of the first side (SS1), the second side (SS2), the third side (SS3), and the fourth side (SS4) of the display panel (100) may be etched by the etchant. Accordingly, the roughness of at least some areas of the first side (SS1), the second side (SS2), the third side (SS3), and the fourth side (SS4) of the display panel (100) may be less than the roughness of the remaining areas that are not etched by the etchant.

[0313] At least a portion of the first side (SS1) of the display panel (100) etched by the etchant may be a lower portion of the first side (SS1). The length of the at least portion of the first side (SS1) of the display panel (100) etched by the etchant may be 0.5 to 0.8 times the total length of the first side (SS1).

[0314] The first power line (VSL) may be a first outer structure disposed in the first non-display area (NDA1). The first outer structure may be disposed farther away from the first side edge (EG1), the third side edge (EG3), and the fourth side edge (EG4) of the display panel (100) than the outermost structure. That is, the distance from the first power line (VSL), which is the first outer structure, to the first side edge (EG1) of the display panel (100) may be greater than the distance from the crack dam (CRD), which is the outermost structure, to the first side edge (EG1) of the display panel (100). In addition, the distance from the first power line (VSL), which is the first outer structure, to the third side edge (EG3) of the display panel (100) may be greater than the distance from the crack dam (CRD), which is the outermost structure, to the third side edge (EG3) of the display panel (100). Additionally, the distance from the first power line (VSL), which is the first outer structure, to the fourth side edge (EG4) of the display panel (100) may be greater than the distance from the crack dam (CRD), which is the outermost structure, to the fourth side edge (EG4) of the display panel (100).

[0315] The distance from the first power wire (VSL) to the crack dam (CRD) at the first side edge (EG1) and the third side edge (EG3) of the display panel (100) may be smaller than the distance from the first power wire (VSL) to the crack dam (CRD) at the fourth side edge (EG4) of the display panel (100). Therefore, the distance from the first power wire (VSL) to the first side edge (EG1) of the display panel (100) may be smaller than the distance from the first power wire (VSL) to the fourth side edge (EG4) of the display panel (100). In addition, the distance from the first power wire (VSL) to the third side edge (EG3) of the display panel (100) may be smaller than the distance from the first power wire (VSL) to the fourth side edge (EG4) of the display panel (100). For example, the distance from the first power wire (VSL) to the first side edge (EG1) of the display panel (100) and the distance from the first power wire (VSL) to the third side edge (EG3) of the display panel (100) may be approximately 160 μm or less. In comparison, the distance from the first power wire (VSL) to the fourth side edge (EG4) of the display panel (100) may be approximately 445 μm or less.

[0316] The second dam (DAM2) may be a second outer structure disposed in the first non-display area (NDA1). The second outer structure may be disposed further away from the first side edge (EG1), the third side edge (EG3), and the fourth side edge (EG4) of the display panel (100) than the first outer structure. That is, the distance from the second dam (DAM2), which is the second outer structure, to the first side edge (EG1) of the display panel (100) may be greater than the distance from the first power line (VSL), which is the first outer structure, to the first side edge (EG1) of the display panel (100). In addition, the distance from the second dam (DAM2) to the third side edge (EG3) of the display panel (100) may be greater than the distance from the first power line (VSL) to the third side edge (EG3) of the display panel (100). Additionally, the distance from the second dam (DAM2) to the fourth side edge (EG4) of the display panel (100) may be greater than the distance from the first power wire (VSL) to the fourth side edge (EG4) of the display panel (100).

[0317] The distance from the second dam (DAM2) to the crack dam (CRD) at the first side edge (EG1) or the third side edge (EG3) of the display panel (100) may be smaller than the distance from the second dam (DAM2) to the crack dam (CRD) at the fourth side edge (EG4) of the display panel (100). Therefore, the distance from the second dam (DAM2) to the first side edge (EG1) or the third side edge (EG3) of the display panel (100) may be smaller than the distance from the second dam (DAM2) to the fourth side edge (EG4) of the display panel (100). For example, the distance from the second dam (DAM2) to the first side edge (EG1) or the third side edge (EG3) of the display panel (100) may be approximately 220 μm or less. Additionally, the distance from the second dam (DAM2) to the fourth side edge (EG4) of the display panel (100) may be approximately 445 μm or less.

[0318] In FIGS. 17 to 20, a crack dam (CRD) is exemplified as the outermost structure of the first side edge (EG1), the third side edge (EG3), and the fourth side edge (EG4) of the display panel (100), and a display pad (PD) is exemplified as the outermost structure of the second side edge (EG2) of the display panel (100), but the embodiments of the present specification are not limited thereto. The outermost structure is a structure disposed closest to the first side edge (EG1), the second side edge (EG2), the third side edge (EG3), and the fourth side edge (EG4) of the display panel (100), and may be a structure for driving the display panel (100) or a structure for improving the function of the display panel (100). The outermost structure may be a structure disposed away from the first side edge (EG1), the second side edge (EG2), the third side edge (EG3), and the fourth side edge (EG4) of the display panel (100). That is, the outermost structure is not a structure disposed on the first side edge (EG1), the second side edge (EG2), the third side edge (EG3), and the fourth side edge (EG4) of the display panel (100).

[0319] When the crack dam (CRD) is omitted or deleted, the outermost structure may be a power wiring (e.g., a first power wiring (VSL)) for driving the display panel (100). Alternatively, when the crack dam (CRD) is omitted or deleted, the outermost structure may be a signal wiring. The signal wiring may be a signal wiring for driving a scan driving circuit (SDC). Alternatively, when the crack dam (CRD) is omitted or deleted, the outermost structure may be a wiring or an organic film structure (e.g., a first dam (DAM1) and a second dam (DAM2)) for improving the function of the display panel (100).

[0320] Fig. 21 is a cross-sectional view showing in detail an example of area E of Fig. 17. Fig. 22 is a cross-sectional view showing in detail an example of area F of Fig. 18. Fig. 23 is a cross-sectional view showing in detail an example of area G of Fig. 19. Fig. 24 is a cross-sectional view showing in detail an example of area H of Fig. 20.

[0321] Referring to FIG. 9 and FIGS. 21 to 24, the crack dam (CRD) may include the same material as the first organic film (160) and may be disposed on the same layer. The crack dam (CRD) may be disposed on the second interlayer insulating film (142). The crack dam (CRD) may be formed of an organic film such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

[0322] Although FIG. 21 illustrates that the crack dam (CRD) includes one organic film layer, the embodiments of the present specification are not limited thereto. For example, the crack dam (CRD) may further include another organic film layer including the same material as the second organic film (180). Alternatively, the crack dam (CRD) may further include another organic film layer including the same material as the bank (190). Alternatively, the crack dam (CRD) may further include another organic film layer including the same material as the spacer (191).

[0323] The first power line (VSL) may include the same material as the first data metal layer including the first connection electrode (CE1) and the data lines, and may be disposed on the same layer. The first power line (VSL) may be disposed on the second interlayer insulating film (142). The first power line (VSL) may be formed as a single layer or multiple layers made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0324] A first dam (DAM1) and a second dam (DAM2) may be disposed on a first power line (VSL). The first dam (DAM1) may include a first sub-dam (SDAM1) and a second sub-dam (SDAM2), and the second dam (DAM2) may include a first sub-dam (SDAM1), a second sub-dam (SDAM2), and a third sub-dam (SDAM3). The first sub-dam (SDAM1) may include the same material as the first organic film (160) and may be disposed on the same layer. The second sub-dam (SDAM2) may include the same material as the second organic film (180) and may be disposed on the same layer. The third sub-dam (SDAM3) may include the same material as the bank (190) and may be disposed on the same layer.

[0325] The height of the first dam (DAM1) may be lower than the height of the second dam (DAM2), but the embodiments of the present specification are not limited thereto. The height of the first dam (DAM1) may be substantially equal to or higher than the height of the second dam (DAM2).

[0326] The common electrode (173) can be connected to the first power line (VSL) that is exposed and not covered by the first organic film (160), the second organic film (180), and the first dam (DAM1). As a result, the common electrode (173) can be supplied with the first power voltage of the first power line (VSL).

[0327] The first encapsulating organic film (TFE1) may cover the first dam (DAM1) and the second dam (DAM2) in the non-display area (NDA) of the display panel (100). The encapsulating organic film (TFE2) may be arranged to cover the upper surface of the first dam (DAM1) and not cover the upper surface of the second dam (DAM2). However, the embodiment of the present specification is not limited thereto. The encapsulating organic film (TFE2) may not cover both the upper surface of the first dam (DAM1) and the upper surface of the second dam (DAM2). The encapsulating organic film (TFE2) may not overflow to the first side edge (EG1), the third side edge (EG3), and the fourth side edge (EG4) of the display panel (100) due to the first dam (DAM1) and the second dam (DAM2), and may not overflow to the display pads (PD) of the display panel (100). The second encapsulating inorganic film (TFE3) may cover the first dam (DAM1) and the second dam (DAM2) in the non-display area (NDA) of the display panel (100).

[0328] An inorganic encapsulation region can be formed in an area adjacent to the second dam (DAM2) where the first encapsulation inorganic membrane (TFE1) and the second encapsulation inorganic membrane (TFE3) are in contact with each other. The inorganic encapsulation region can be arranged to surround the second dam (DAM2).

[0329] In addition, FIGS. 21 and 23 illustrate a scan thin film transistor (STFT) of a scan driving circuit (SDC). Since the scan thin film transistor (STFT) is substantially the same as the thin film transistor (TFT) described in conjunction with FIG. 9, a description of the scan thin film transistor (STFT) is omitted.

[0330] The display pad (PD) may include a first sub pad (SPD1), a second sub pad (SPD2), and a third sub pad (SPD3) as shown in FIG. 22.

[0331] The first sub-pad (SPD1) may include the same material as the first gate metal layer including the gate electrode (TG), the first capacitor electrode (CAE1) of the capacitor (Cst), and scan lines, and may be disposed on the same layer. The first sub-pad (SPD1) may be disposed on the gate insulating film (130). The first sub-pad (SPD1) may be formed as a single layer or multiple layers made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0332] The second sub-pad (SPD2) may include the same material as the second gate metal layer including the second capacitor electrode (CAE2) and may be disposed on the same layer. The second sub-pad (SPD2) may be disposed on the first interlayer insulating film (141). The second sub-pad (SPD2) may be formed as a single layer or multiple layers made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0333] The third sub-pad (SPD3) may include the same material as the first data metal layer including the first connection electrode (CE1) and data lines, and may be disposed on the same layer. The third sub-pad (SPD3) may be disposed on the second interlayer insulating film (142). The third sub-pad (SPD3) may be formed as a single layer or multiple layers made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0334] The third sub-pad (SPD3) can be electrically connected to the lead line (LEAL) of the circuit board (300) through a conductive adhesive material (CAD) such as an anisotropic conductive film or an anisotropic conductive adhesive.

[0335] Figures 25a to 25d are enlarged cross-sectional views showing examples of first to fourth side surfaces of the substrate in Figures 17 to 20. Figure 25a shows cross-sections of the first side surface (SS1), Figure 25b shows cross-sections of the second side surface (SS2), Figure 25c shows cross-sections of the third side surface (SS3), and Figure 25d shows cross-sections of the fourth side surface (SS4).

[0336] Referring to Fig. 25a, the first side (SS1) may have a curved shape with a changing radius of curvature. The curved shape of the upper portion (e.g., the first upper portion, SS1U) of the first side (SS1) and the curved shape of the lower portion (e.g., the first lower portion, SS1B) of the first side (SS1) may be different. The upper portion (SS1U) of the first side (SS1) refers to an area positioned above the center (e.g., the first center, SS1C) of the first side (SS1). The lower portion (SS1B) of the first side (SS1) refers to an area positioned below the center (SS1C) of the first side (SS1).

[0337] The radius of curvature of the upper portion (SS1U) of the first side (SS1) and the radius of curvature of the lower portion (SS1B) of the first side (SS1) may be different. For example, the radius of curvature of the lower portion (SS1B) of the first side (SS1) may be smaller than the radius of curvature of the upper portion (SS1U) of the first side (SS1).

[0338] The radius of curvature of the upper portion (SS1U) of the first side (SS1) may be defined as the radius of curvature of a curve passing through the center (SS1C) of the first side (SS1), the upper end (SS1UE) of the first side (SS1), and the upper center (e.g., the first upper center, SS1UC) of the first side (SS1). The radius of curvature of the lower portion (SS1B) of the first side (SS1) may be defined as the radius of curvature of a curve passing through the center (SS1C) of the first side (SS1), the lower end (SS1BE) of the first side (SS1), and the lower center (e.g., the first lower center, SS1BC) of the first side (SS1).

[0339] Additionally, the radius of curvature of the central region of the first side (SS1) may be different from the radius of curvature of the upper portion (SS1U) of the first side (SS1) and the radius of curvature of the lower portion (SS1B) of the first side (SS1). The radius of curvature of the central region of the first side (SS1) may be defined as the radius of curvature of a curve passing through the center (SS1C) of the first side (SS1), the upper center (SS1UC) of the first side (SS1), and the lower center (SS1BC) of the first side (SS1).

[0340] Additionally, the difference between the radius of curvature of the upper central region (SS1UA) of the first side (SS1) and the radius of curvature of the lower central region (SS1BA) of the first side (SS1) may be smaller than the difference between the radius of curvature of the upper portion (SS1U) of the first side (SS1) and the radius of curvature of the lower portion (SS1B) of the first side (SS1). The radius of curvature of the upper central region (SS1UA) of the first side (SS1) and the radius of curvature of the lower central region (SS1BA) of the first side (SS1) may be substantially the same. Alternatively, the difference between the radius of curvature of the upper central region (SS1UA) of the first side (SS1) and the radius of curvature of the lower central region (SS1BA) of the first side (SS1) may be 30 μm or less.

[0341] The radius of curvature of the upper central area (SS1UA) of the first side (SS1) may be defined as the radius of curvature of a curve passing through the center (SS1C) of the first side (SS1), the upper center (SS1UC) of the first side (SS1), and the first point (PP1_1) of the first side (SS1). The radius of curvature of the lower central area (SS1BA) of the first side (SS1) may be defined as the radius of curvature of a curve passing through the center (SS1C) of the first side (SS1), the lower center (SS1BC) of the first side (SS1), and the second point (PP2_1) of the first side (SS1). The first point (PP1_1) of the first side (SS1) may be defined as a midpoint between the center (SS1C) of the first side (SS1) and the upper center (SS1UC) of the first side (SS1). The second point (PP2_1) of the first side (SS1) can be defined as the midpoint between the center (SS1C) of the first side (SS1) and the lower center (SS1BC) of the first side (SS1).

[0342] Referring to Fig. 25b, the second side (SS2) may have a curved shape with a changing radius of curvature. The curved shape of the upper portion (e.g., the second upper portion, SS2U) of the second side (SS2) and the curved shape of the lower portion (e.g., the second lower portion, SS2B) of the second side (SS2) may be different. The upper portion (SS2U) of the second side (SS2) refers to an area positioned above the center (e.g., the second center, SS2C) of the second side (SS2). The lower portion (SS2B) of the second side (SS2) refers to an area positioned below the center (SS2C) of the second side (SS2).

[0343] The radius of curvature of the upper portion (SS2U) of the second side (SS2) and the radius of curvature of the lower portion (SS2B) of the second side (SS2) may be different. For example, the radius of curvature of the lower portion (SS2B) of the second side (SS2) may be smaller than the radius of curvature of the upper portion (SS2U) of the second side (SS2).

[0344] The radius of curvature of the upper portion (SS2U) of the second side (SS2) may be defined as the radius of curvature of a curve passing through the center (SS2C) of the second side (SS2), the upper end (SS2UE) of the second side (SS2), and the upper center (e.g., the second upper center, SS2UC) of the second side (SS2). The radius of curvature of the lower portion (SS2B) of the second side (SS2) may be defined as the radius of curvature of a curve passing through the center (SS2C) of the second side (SS2), the lower end (SS2BE) of the second side (SS2), and the lower center (e.g., the second lower center, SS2BC) of the second side (SS2).

[0345] Additionally, the radius of curvature of the central region of the second side (SS2) may be different from the radius of curvature of the upper portion (SS2U) of the second side (SS2) and the radius of curvature of the lower portion (SS2B) of the second side (SS2). The radius of curvature of the central region of the second side (SS2) may be defined as the radius of curvature of a curve passing through the center (SS2C) of the second side (SS2), the upper center (SS2UC) of the second side (SS2), and the lower center (SS2BC) of the second side (SS2).

[0346] Additionally, the difference between the radius of curvature of the upper central region (SS2UA) of the second side (SS2) and the radius of curvature of the lower central region (SS2BA) of the second side (SS2) may be smaller than the difference between the radius of curvature of the upper portion (SS2U) of the second side (SS2) and the radius of curvature of the lower portion (SS2B) of the second side (SS2). The radius of curvature of the upper central region (SS2UA) of the second side (SS2) and the radius of curvature of the lower central region (SS2BA) of the second side (SS2) may be substantially the same. Alternatively, the difference between the radius of curvature of the upper central region (SS2UA) of the second side (SS2) and the radius of curvature of the lower central region (SS2BA) of the second side (SS2) may be 30 μm or less.

[0347] The radius of curvature of the upper central area (SS2UA) of the second side (SS2) can be defined as the radius of curvature of a curve passing through the center (SS2C) of the second side (SS2), the upper center (SS2UC) of the second side (SS2), and the first point (PP1_2) of the second side (SS2). The radius of curvature of the lower central area (SS2BA) of the second side (SS2) can be defined as the radius of curvature of a curve passing through the center (SS2C) of the second side (SS2), the lower center (SS2BC) of the second side (SS2), and the second point (PP2_2) of the second side (SS2). The first point (PP1_2) of the second side (SS2) can be defined as a midpoint between the center (SS2C) of the second side (SS2) and the upper center (SS2UC) of the second side (SS2). The second point (PP2_2) of the second side (SS2) can be defined as the midpoint between the center (SS2C) of the second side (SS2) and the lower center (SS2BC) of the second side (SS2).

[0348] Referring to Fig. 25c, the third side (SS3) may have a curved shape with a varying radius of curvature. The curved shape of the upper portion (e.g., the third upper portion, SS3U) of the third side (SS3) and the curved shape of the lower portion (e.g., the third lower portion, SS3B) of the third side (SS3) may be different. The upper portion (SS3U) of the third side (SS3) refers to an area positioned above the center (e.g., the third center, SS3C) of the third side (SS3). The lower portion (SS3B) of the third side (SS3B) refers to an area positioned below the center (SS3C) of the third side (SS3).

[0349] The radius of curvature of the upper portion (SS3U) of the third side (SS3) and the radius of curvature of the lower portion (SS3B) of the third side (SS3) may be different. For example, the radius of curvature of the lower portion (SS3B) of the third side (SS3) may be smaller than the radius of curvature of the upper portion (SS3U) of the third side (SS3).

[0350] The radius of curvature of the upper portion (SS3U) of the third side (SS3) may be defined as the radius of curvature of a curve passing through the center (SS3C) of the third side (SS3), the upper end (SS3UE) of the third side (SS3), and the upper center (e.g., the third upper center, SS3UC) of the third side (SS3). The radius of curvature of the lower portion (SS3B) of the third side (SS3) may be defined as the radius of curvature of a curve passing through the center (SS3C) of the third side (SS3), the lower end (SS3BE) of the third side (SS3), and the lower center (e.g., the third lower center, SS3BC) of the third side (SS3).

[0351] Additionally, the radius of curvature of the central region of the third side (SS3) may be different from the radius of curvature of the upper portion (SS3U) of the third side (SS3) and the radius of curvature of the lower portion (SS3B) of the third side (SS3). The radius of curvature of the central region of the third side (SS3) may be defined as the radius of curvature of a curve passing through the center (SS3C) of the third side (SS3), the upper center (SS3UC) of the third side (SS3), and the lower center (SS3BC) of the third side (SS3).

[0352] Additionally, the difference between the radius of curvature of the upper central region (SS3UA) of the third side (SS3) and the radius of curvature of the lower central region (SS3BA) of the third side (SS3) may be smaller than the difference between the radius of curvature of the upper portion (SS3U) of the third side (SS3) and the radius of curvature of the lower portion (SS3B) of the third side (SS3). The radius of curvature of the upper central region (SS3UA) of the third side (SS3) and the radius of curvature of the lower central region (SS3BA) of the third side (SS3) may be substantially the same. Alternatively, the difference between the radius of curvature of the upper central region (SS3UA) of the third side (SS3) and the radius of curvature of the lower central region (SS3BA) of the third side (SS3) may be 30 μm or less.

[0353] The radius of curvature of the upper central area (SS3UA) of the third side (SS3) may be defined as the radius of curvature of a curve passing through the center (SS3C) of the third side (SS3), the upper center (SS3UC) of the third side (SS3), and the first point (PP1_3) of the third side (SS3). The radius of curvature of the lower central area (SS3BA) of the third side (SS3) may be defined as the radius of curvature of a curve passing through the center (SS3C) of the third side (SS3), the lower center (SS3BC) of the third side (SS3), and the second point (PP2_3) of the third side (SS3). The first point (PP1_3) of the third side (SS3) may be defined as a midpoint between the center (SS3C) of the third side (SS3) and the upper center (SS3UC) of the third side (SS3). The second point (PP2_3) of the third side (SS3) can be defined as the midpoint between the center (SS3C) of the third side (SS3) and the lower center (SS3BC) of the third side (SS3).

[0354] Referring to FIG. 25d, the fourth side surface (SS4) may have a curved shape with a varying radius of curvature. The curved shape of the upper portion (e.g., the fourth upper portion, SS4U) of the fourth side surface (SS4) and the curved shape of the lower portion (e.g., the fourth lower portion, SS4B) of the fourth side surface (SS4) may be different. The upper portion (SS4U) of the fourth side surface (SS4) refers to an area positioned above the center (e.g., the fourth center, SS4C) of the fourth side surface (SS4). The lower portion (SS4B) of the fourth side surface (SS4) refers to an area positioned below the center (SS4C) of the fourth side surface (SS4).

[0355] The radius of curvature of the upper portion (SS4U) of the fourth side (SS4) and the radius of curvature of the lower portion (SS4B) of the fourth side (SS4) may be different. For example, the radius of curvature of the lower portion (SS4B) of the fourth side (SS4) may be smaller than the radius of curvature of the upper portion (SS4U) of the fourth side (SS4).

[0356] The radius of curvature of the upper portion (SS4U) of the fourth side surface (SS4) may be defined as the radius of curvature of a curve passing through the center (SS4C) of the fourth side surface (SS4), the upper end (SS4UE) of the fourth side surface (SS4), and the upper center (e.g., the fourth upper center, SS4UC) of the fourth side surface (SS4). The radius of curvature of the lower portion (SS4B) of the fourth side surface (SS4) may be defined as the radius of curvature of a curve passing through the center (SS4C) of the fourth side surface (SS4), the lower end (SS4BE) of the fourth side surface (SS4), and the lower center (e.g., the fourth lower center, SS4BC) of the fourth side surface (SS4).

[0357] Additionally, the radius of curvature of the central region of the fourth side (SS4) may be different from the radius of curvature of the upper portion (SS4U) of the fourth side (SS4) and the radius of curvature of the lower portion (SS4B) of the fourth side (SS4). The radius of curvature of the central region of the fourth side (SS4) may be defined as the radius of curvature of a curve passing through the center (SS4C) of the fourth side (SS4), the upper center (SS4UC) of the fourth side (SS4), and the lower center (SS4BC) of the fourth side (SS4).

[0358] Additionally, the difference between the radius of curvature of the upper central region (SS4UA) of the fourth side (SS4) and the radius of curvature of the lower central region (SS4BA) of the fourth side (SS4) may be smaller than the difference between the radius of curvature of the upper region (SS4U) of the fourth side (SS4) and the radius of curvature of the lower region (SS4B) of the fourth side (SS4). The radius of curvature of the upper central region (SS4UA) of the fourth side (SS4) and the radius of curvature of the lower central region (SS4BA) of the fourth side (SS4) may be substantially the same. Alternatively, the difference between the radius of curvature of the upper central region (SS4UA) of the fourth side (SS4) and the radius of curvature of the lower central region (SS4BA) of the fourth side (SS4) may be 30 μm or less.

[0359] The radius of curvature of the upper central area (SS4UA) of the fourth side (SS4) may be defined as the radius of curvature of a curve passing through the center (SS4C) of the fourth side (SS4), the upper central area (SS4UC) of the fourth side (SS4), and the first point (PP1_4) of the fourth side (SS4). The radius of curvature of the lower central area (SS4BA) of the fourth side (SS4) may be defined as the radius of curvature of a curve passing through the center (SS4C) of the fourth side (SS4), the lower central area (SS4BC) of the fourth side (SS4), and the second point (PP2_4) of the fourth side (SS4). The first point (PP1_4) of the fourth side (SS4) may be defined as a midpoint between the center (SS4C) of the fourth side (SS4) and the upper central area (SS4UC) of the fourth side (SS4). The second point (PP2_4) of the fourth side (SS4) can be defined as the midpoint between the center (SS4C) of the fourth side (SS4) and the lower center (SS4BC) of the fourth side (SS4).

[0360] Referring to FIGS. 25A to 25D, the curvature radius of the upper portion (SS1U) of the first side (SS1), the curvature radius of the upper portion (SS2U) of the second side (SS2), the curvature radius of the upper portion (SS3U) of the third side (SS3), and the curvature radius of the upper portion (SS4U) of the fourth side (SS4) may be similar to each other. For example, the curvature radius of the upper portion (SS1U) of the first side (SS1), the curvature radius of the upper portion (SS2U) of the second side (SS2), the curvature radius of the upper portion (SS3U) of the third side (SS3), and the curvature radius of the upper portion (SS4U) of the fourth side (SS4) may be 150 μm to 350 μm.

[0361] The difference between the radius of curvature of the upper portion (SS1U) of the first side (SS1) and the radius of curvature of the upper portion (SS2U) of the second side (SS2) may be less than approximately 30 μm. The difference between the radius of curvature of the upper portion (SS1U) of the first side (SS1) and the radius of curvature of the upper portion (SS3U) of the third side (SS3) may be less than approximately 30 μm. The difference between the radius of curvature of the upper portion (SS1U) of the first side (SS1) and the radius of curvature of the upper portion (SS4U) of the fourth side (SS4) may be less than approximately 30 μm. The difference between the radius of curvature of the upper portion (SS2U) of the second side (SS2) and the radius of curvature of the upper portion (SS3U) of the third side (SS3) may be less than approximately 30 μm. The difference between the radius of curvature of the upper portion (SS2U) of the second side (SS2) and the radius of curvature of the upper portion (SS4U) of the fourth side (SS4) may be less than approximately 30 μm. The difference between the radius of curvature of the upper portion (SS3U) of the third side (SS3) and the radius of curvature of the upper portion (SS4U) of the fourth side (SS4) may be less than approximately 30 μm.

[0362] As shown in FIGS. 25a to 25d, the difference in the radius of curvature between the side surfaces (SS1, SS2, SS3, SS4) of the substrate (SUB) of the display panel (100) may be minimal. As a result, the mechanical strength can be maintained uniformly depending on the positions of the side surfaces (SS1, SS2, SS3, SS4) of the substrate (SUB) of the display panel (100).

[0363] Figures 26a to 26d are enlarged cross-sectional views showing further examples of the first to fourth side surfaces of the substrates in Figures 17 to 20. Figure 26a shows cross-sections of the first side surface (SS1), Figure 26b shows cross-sections of the second side surface (SS2), Figure 26c shows cross-sections of the third side surface (SS3), and Figure 26d shows cross-sections of the fourth side surface (SS4).

[0364] Referring to FIG. 26a, the first side surface (SS1) may have a first sub-side surface (SS11) having a planar or curved shape and a second sub-side surface (SS12) having a curved shape with a varying radius of curvature. The length of the first sub-side surface (SS11) may be shorter than the length of the second sub-side surface (SS12).

[0365] The first sub-side (SS11) may be connected to the upper surface (US), and the second sub-side (SS12) may be connected to the lower surface (BS). The angle between the first sub-side (SS11) and the upper surface (US) may be a right angle or an obtuse angle close to a right angle.

[0366] The curved shape of the upper portion (SS12U) of the second sub-side (SS12) and the curved shape of the lower portion (SS12B) of the second sub-side (SS12) may be different. The upper portion (SS12U) of the second sub-side (SS12) refers to an area positioned above the center (SS12C) of the second sub-side (SS12). The lower portion (SS12B) of the second sub-side (SS12) refers to an area positioned below the center (SS12C) of the second sub-side (SS12).

[0367] The radius of curvature of the upper portion (SS12U) of the second sub-side (SS12) and the radius of curvature of the lower portion (SS12B) of the second sub-side (SS12) may be different. For example, the radius of curvature of the lower portion (SS12B) of the second sub-side (SS12) may be smaller than the radius of curvature of the upper portion (SS12U) of the second sub-side (SS12).

[0368] The radius of curvature of the upper portion (SS12U) of the second sub-side (SS12) may be defined as the radius of curvature of a curve passing through the center (SS12C) of the second sub-side (SS12), the upper end (SS12UE) of the second sub-side (SS12), and the upper center (SS12UC) of the second sub-side (SS12). The radius of curvature of the lower portion (SS12B) of the second sub-side (SS12) may be defined as the radius of curvature of a curve passing through the center (SS12C) of the second sub-side (SS12), the lower end (SS12BE) of the second sub-side (SS12), and the lower center (SS12BC) of the second sub-side (SS12).

[0369] Additionally, the radius of curvature of the central region of the second sub-side (SS12) may be different from the radius of curvature of the upper portion (SS12U) of the second sub-side (SS12) and the radius of curvature of the lower portion (SS12B) of the second sub-side (SS12). The radius of curvature of the central region of the second sub-side (SS12) may be defined as the radius of curvature of a curve passing through the center (SS12C) of the second sub-side (SS12), the upper center (SS12UC) of the second sub-side (SS12), and the lower center (SS12BC) of the second sub-side (SS12).

[0370] Additionally, the difference between the radius of curvature of the upper central region (SS12UA) of the second sub-side (SS12) and the radius of curvature of the lower central region (SS12BA) of the second sub-side (SS12) may be smaller than the difference between the radius of curvature of the upper portion (SS12U) of the second sub-side (SS12) and the radius of curvature of the lower portion (SS12B) of the second sub-side (SS12). The radius of curvature of the upper central region (SS12UA) of the second sub-side (SS12) and the radius of curvature of the lower portion (SS12BA) of the second sub-side (SS12) may be substantially the same. Alternatively, the difference between the radius of curvature of the upper central region (SS12UA) of the second sub-side (SS12) and the radius of curvature of the lower central region (SS12BA) of the second sub-side (SS12) may be 30 μm or less.

[0371] The radius of curvature of the upper central area (SS12UA) of the second sub-side (SS12) may be defined as the radius of curvature of a curve passing through the center (SS12C) of the second sub-side (SS12), the upper central area (SS12UC) of the second sub-side (SS12), and the first point (PP12_1) of the second sub-side (SS12). The radius of curvature of the lower central area (SS12BA) of the second sub-side (SS12) may be defined as the radius of curvature of a curve passing through the center (SS12C) of the second sub-side (SS12), the lower central area (SS12BC) of the second sub-side (SS12), and the second point (PP12_2) of the second sub-side (SS12). The first point (PP12_1) of the second sub-side (SS12) may be defined as a midpoint between the center (SS12C) of the second sub-side (SS12) and the upper center (SS12UC) of the second sub-side (SS12). The second point (PP12_2) of the second sub-side (SS12) may be defined as a midpoint between the center (SS12C) of the second sub-side (SS12) and the lower center (SS12BC) of the second sub-side (SS12).

[0372] Referring to FIG. 26b, the second side surface (SS2) may have a third sub-side surface (SS21) having a planar or curved shape and a fourth sub-side surface (SS22) having a curved shape with a varying radius of curvature. The length of the third sub-side surface (SS21) may be shorter than the length of the fourth sub-side surface (SS22).

[0373] The third sub-side (SS21) may be connected to the upper surface (US), and the fourth sub-side (SS22) may be connected to the lower surface (BS). The angle between the third sub-side (SS21) and the upper surface (US) may be a right angle or an obtuse angle close to a right angle.

[0374] The curved shape of the upper portion (SS22U) of the fourth sub-side (SS22) and the curved shape of the lower portion (SS22B) of the fourth sub-side (SS22) may be different. The upper portion (SS22U) of the fourth sub-side (SS22) refers to an area positioned above the center (SS22C) of the fourth sub-side (SS22). The lower portion (SS22B) of the fourth sub-side (SS22) refers to an area positioned below the center (SS22C) of the fourth sub-side (SS22).

[0375] The radius of curvature of the upper portion (SS22U) of the fourth sub-side (SS22) and the radius of curvature of the lower portion (SS22B) of the fourth sub-side (SS22) may be different. For example, the radius of curvature of the lower portion (SS22B) of the fourth sub-side (SS22) may be smaller than the radius of curvature of the upper portion (SS22U) of the fourth sub-side (SS22).

[0376] The radius of curvature of the upper portion (SS22U) of the fourth sub-side (SS22) may be defined as the radius of curvature of a curve passing through the center (SS22C) of the fourth sub-side (SS22), the upper end (SS22UE) of the fourth sub-side (SS22), and the upper center (SS22UC) of the fourth sub-side (SS22). The radius of curvature of the lower portion (SS22B) of the fourth sub-side (SS22) may be defined as the radius of curvature of a curve passing through the center (SS22C) of the fourth sub-side (SS22), the lower end (SS22BE) of the fourth sub-side (SS22), and the lower center (SS22BC) of the fourth sub-side (SS22).

[0377] Additionally, the radius of curvature of the central region of the fourth sub-side (SS22) may be different from the radius of curvature of the upper portion (SS22U) of the fourth sub-side (SS22) and the radius of curvature of the lower portion (SS22B) of the fourth sub-side (SS22). The radius of curvature of the central region of the fourth sub-side (SS22) may be defined as the radius of curvature of a curve passing through the center (SS22C) of the fourth sub-side (SS22), the upper center (SS22UC) of the fourth sub-side (SS22), and the lower center (SS22BC) of the fourth sub-side (SS22).

[0378] Additionally, the difference between the radius of curvature of the upper central region (SS22UA) of the fourth sub-side surface (SS22) and the radius of curvature of the lower central region (SS22BA) of the fourth sub-side surface (SS22) may be smaller than the difference between the radius of curvature of the upper portion (SS22U) of the fourth sub-side surface (SS22) and the radius of curvature of the lower portion (SS22B) of the fourth sub-side surface (SS22). The radius of curvature of the upper central region (SS22UA) of the fourth sub-side surface (SS22) and the radius of curvature of the lower portion (SS22BA) of the fourth sub-side surface (SS22) may be substantially the same. Alternatively, the difference between the radius of curvature of the upper central region (SS22UA) of the fourth sub-side surface (SS22) and the radius of curvature of the lower central region (SS22BA) of the fourth sub-side surface (SS22) may be 30 μm or less.

[0379] The radius of curvature of the upper central region (SS22UA) of the fourth sub-side (SS22) can be defined as the radius of curvature of a curve passing through the center (SS22C) of the fourth sub-side (SS22), the upper central region (SS22UC) of the fourth sub-side (SS22), and the first point (PP22_1) of the fourth sub-side (SS22). The radius of curvature of the lower central region (SS22BA) of the fourth sub-side (SS22) can be defined as the radius of curvature of a curve passing through the center (SS22C) of the fourth sub-side (SS22), the lower central region (SS22BC) of the fourth sub-side (SS22), and the second point (PP22_2) of the fourth sub-side (SS22). The first point (PP22_1) of the fourth sub-side (SS22) may be defined as a midpoint between the center (SS22C) of the fourth sub-side (SS22) and the upper center (SS22UC) of the fourth sub-side (SS22). The second point (PP22_2) of the fourth sub-side (SS22) may be defined as a midpoint between the center (SS22C) of the fourth sub-side (SS22) and the lower center (SS22BC) of the fourth sub-side (SS22).

[0380] Referring to FIG. 26c, the third side surface (SS3) may have a fifth sub-side surface (SS31) having a planar or curved shape and a sixth sub-side surface (SS32) having a curved shape with a varying radius of curvature. The length of the fifth sub-side surface (SS31) may be shorter than the length of the sixth sub-side surface (SS32).

[0381] The fifth sub-side (SS31) may be connected to the upper surface (US), and the sixth sub-side (SS32) may be connected to the lower surface (BS). The angle between the fifth sub-side (SS31) and the upper surface (US) may be a right angle or an obtuse angle close to a right angle.

[0382] The curved shape of the upper portion (SS32U) of the sixth sub-side (SS32) and the curved shape of the lower portion (SS32B) of the sixth sub-side (SS32) may be different. The upper portion (SS32U) of the sixth sub-side (SS32) refers to an area positioned above the center (SS32C) of the sixth sub-side (SS32). The lower portion (SS32B) of the sixth sub-side (SS32) refers to an area positioned below the center (SS32C) of the sixth sub-side (SS32).

[0383] The radius of curvature of the upper portion (SS32U) of the sixth sub-side (SS32) and the radius of curvature of the lower portion (SS32B) of the sixth sub-side (SS32) may be different. For example, the radius of curvature of the lower portion (SS32B) of the sixth sub-side (SS32) may be smaller than the radius of curvature of the upper portion (SS32U) of the sixth sub-side (SS32).

[0384] The radius of curvature of the upper portion (SS32U) of the sixth sub-side (SS32) may be defined as the radius of curvature of a curve passing through the center (SS32C) of the sixth sub-side (SS32), the upper end (SS32UE) of the sixth sub-side (SS32), and the upper center (SS32UC) of the sixth sub-side (SS32). The radius of curvature of the lower portion (SS32B) of the sixth sub-side (SS32) may be defined as the radius of curvature of a curve passing through the center (SS32C) of the sixth sub-side (SS32), the lower end (SS32BE) of the sixth sub-side (SS32), and the lower center (SS32BC) of the sixth sub-side (SS32).

[0385] Additionally, the radius of curvature of the central region of the sixth sub-side (SS32) may be different from the radius of curvature of the upper portion (SS32U) of the sixth sub-side (SS32) and the radius of curvature of the lower portion (SS32B) of the sixth sub-side (SS32). The radius of curvature of the central region of the sixth sub-side (SS32) may be defined as the radius of curvature of a curve passing through the center (SS32C) of the sixth sub-side (SS32), the upper center (SS32UC) of the sixth sub-side (SS32), and the lower center (SS32BC) of the sixth sub-side (SS32).

[0386] Additionally, the difference between the radius of curvature of the upper central region (SS32UA) of the sixth sub-side (SS32) and the radius of curvature of the lower central region (SS32BA) of the sixth sub-side (SS32) may be smaller than the difference between the radius of curvature of the upper region (SS32U) of the sixth sub-side (SS32) and the radius of curvature of the lower region (SS32B) of the sixth sub-side (SS32). The radius of curvature of the upper central region (SS32UA) of the sixth sub-side (SS32) and the radius of curvature of the lower central region (SS32BA) of the sixth sub-side (SS32) may be substantially the same. Alternatively, the difference between the radius of curvature of the upper central region (SS32UA) of the sixth sub-side (SS32) and the radius of curvature of the lower central region (SS32BA) of the sixth sub-side (SS32) may be 30 μm or less.

[0387] The radius of curvature of the upper central region (SS32UA) of the sixth sub-side (SS32) may be defined as the radius of curvature of a curve passing through the center (SS32C) of the sixth sub-side (SS32), the upper central region (SS32UC) of the sixth sub-side (SS32), and the first point (PP32_1) of the sixth sub-side (SS32). The radius of curvature of the lower central region (SS32BA) of the sixth sub-side (SS32) may be defined as the radius of curvature of a curve passing through the center (SS32C) of the sixth sub-side (SS32), the lower central region (SS32BC) of the sixth sub-side (SS32), and the second point (PP32_2) of the sixth sub-side (SS32). The first point (PP32_1) of the sixth sub-side (SS32) may be defined as a midpoint between the center (SS32C) of the sixth sub-side (SS32) and the upper center (SS32UC) of the sixth sub-side (SS32). The second point (PP32_2) of the sixth sub-side (SS32) may be defined as a midpoint between the center (SS32C) of the sixth sub-side (SS32) and the lower center (SS32BC) of the sixth sub-side (SS32).

[0388] Referring to FIG. 26d, the fourth side surface (SS4) may have a seventh sub-side surface (SS41) having a planar or curved shape and an eighth sub-side surface (SS42) having a curved shape with a varying radius of curvature. The length of the seventh sub-side surface (SS41) may be shorter than the length of the eighth sub-side surface (SS42).

[0389] The seventh sub-side (SS41) may be connected to the upper surface (US), and the eighth sub-side (SS42) may be connected to the lower surface (BS). The angle between the seventh sub-side (SS41) and the upper surface (US) may be a right angle or an obtuse angle close to a right angle.

[0390] The curved shape of the upper portion (SS42U) of the 8th sub-side (SS42) and the curved shape of the lower portion (SS42B) of the 8th sub-side (SS42) may be different. The upper portion (SS42U) of the 8th sub-side (SS42) refers to an area positioned above the center (SS42C) of the 8th sub-side (SS42). The lower portion (SS42B) of the 8th sub-side (SS42) refers to an area positioned below the center (SS42C) of the 8th sub-side (SS42).

[0391] The radius of curvature of the upper portion (SS42U) of the eighth sub-side surface (SS42) and the radius of curvature of the lower portion (SS42B) of the eighth sub-side surface (SS42) may be different. For example, the radius of curvature of the lower portion (SS42B) of the eighth sub-side surface (SS42) may be smaller than the radius of curvature of the upper portion (SS42U) of the eighth sub-side surface (SS42).

[0392] The radius of curvature of the upper portion (SS42U) of the eighth sub-side surface (SS42) may be defined as the radius of curvature of a curve passing through the center (SS42C) of the eighth sub-side surface (SS42), the upper end (SS42UE) of the eighth sub-side surface (SS42), and the upper center (SS42UC) of the eighth sub-side surface (SS42). The radius of curvature of the lower portion (SS42B) of the eighth sub-side surface (SS42) may be defined as the radius of curvature of a curve passing through the center (SS42C) of the eighth sub-side surface (SS42), the lower end (SS42BE) of the eighth sub-side surface (SS42), and the lower center (SS42BC) of the eighth sub-side surface (SS42).

[0393] Additionally, the radius of curvature of the central region of the eighth sub-side surface (SS42) may be different from the radius of curvature of the upper portion (SS42U) of the eighth sub-side surface (SS42) and the radius of curvature of the lower portion (SS42B) of the eighth sub-side surface (SS42). The radius of curvature of the central region of the eighth sub-side surface (SS42) may be defined as the radius of curvature of a curve passing through the center (SS42C) of the eighth sub-side surface (SS42), the upper center (SS42UC) of the eighth sub-side surface (SS42), and the lower center (SS42BC) of the eighth sub-side surface (SS42).

[0394] Additionally, the difference between the radius of curvature of the upper central region (SS42UA) of the eighth sub-side surface (SS42) and the radius of curvature of the lower central region (SS42BA) of the eighth sub-side surface (SS42) may be smaller than the difference between the radius of curvature of the upper portion (SS42U) of the eighth sub-side surface (SS42) and the radius of curvature of the lower portion (SS42B) of the eighth sub-side surface (SS42). The radius of curvature of the upper central region (SS42UA) of the eighth sub-side surface (SS42) and the radius of curvature of the lower central region (SS42BA) of the eighth sub-side surface (SS42) may be substantially the same. Alternatively, the difference between the radius of curvature of the upper central region (SS42UA) of the eighth sub-side surface (SS42) and the radius of curvature of the lower central region (SS42BA) of the eighth sub-side surface (SS42) may be 30 μm or less.

[0395] The radius of curvature of the upper central region (SS42UA) of the eighth sub-side (SS42) can be defined as the radius of curvature of a curve passing through the center (SS42C) of the eighth sub-side (SS42), the upper central region (SS42UC) of the eighth sub-side (SS42), and the first point (PP42_1) of the eighth sub-side (SS42). The radius of curvature of the lower central region (SS42BA) of the eighth sub-side (SS42) can be defined as the radius of curvature of a curve passing through the center (SS42C) of the eighth sub-side (SS42), the lower central region (SS42BC) of the eighth sub-side (SS42), and the second point (PP42_2) of the eighth sub-side (SS42). The first point (PP42_1) of the eighth sub-side (SS42) may be defined as a midpoint between the center (SS42C) of the eighth sub-side (SS42) and the upper center (SS42UC) of the eighth sub-side (SS42). The second point (PP42_2) of the eighth sub-side (SS42) may be defined as a midpoint between the center (SS42C) of the eighth sub-side (SS42) and the lower center (SS42BC) of the eighth sub-side (SS42).

[0396] Referring to FIGS. 26A to 26D , the length of the first sub-side (SS11) of the first side (SS1), the length of the third sub-side (SS21) of the second side (SS2), the length of the fifth sub-side (SS31) of the third side (SS3), and the length of the seventh sub-side (SS41) of the fourth side (SS4) may be similar to each other. For example, the length of the first sub-side (SS11) of the first side (SS1), the length of the third sub-side (SS21) of the second side (SS2), the length of the fifth sub-side (SS31) of the third side (SS3), and the length of the seventh sub-side (SS41) of the fourth side (SS4) may each be greater than 10 μm and less than 30 μm.

[0397] For example, the difference between the length of the first sub-side (SS11) of the first side (SS1) and the length of the third sub-side (SS21) of the second side (SS2) may be less than approximately 10 μm. The difference between the length of the first sub-side (SS11) of the first side (SS1) and the length of the fifth sub-side (SS31) of the third side (SS3) may be less than approximately 10 μm. The difference between the length of the first sub-side (SS11) of the first side (SS1) and the length of the sixth sub-side (SS41) of the fourth side (SS4) may be less than approximately 10 μm. The difference between the length of the third sub-side (SS21) of the second side (SS2) and the length of the fifth sub-side (SS31) of the third side (SS3) may be less than approximately 10 μm. The difference between the length of the third sub-side (SS21) of the second side (SS2) and the length of the seventh sub-side (SS41) of the fourth side (SS4) may be less than approximately 10 μm. The difference between the length of the fifth sub-side (SS31) of the third side (SS3) and the length of the seventh sub-side (SS41) of the fourth side (SS4) may be less than approximately 10 μm.

[0398] The radius of curvature of the upper portion (SS12U) of the second sub-side (SS12) of the first side (SS1), the radius of curvature of the upper portion (SS22U) of the fourth sub-side (SS22) of the second side (SS2), the radius of curvature of the upper portion (SS32U) of the sixth sub-side (SS32) of the third side (SS3), and the radius of curvature of the upper portion (SS42U) of the eighth sub-side (SS42) of the fourth side (SS4) may be similar to each other.

[0399] For example, the difference between the radius of curvature of the upper portion (SS12U) of the second sub-side (SS12) of the first side (SS1) and the radius of curvature of the upper portion (SS22U) of the fourth sub-side (SS22) of the second side (SS2) may be less than approximately 30 μm. The difference between the radius of curvature of the upper portion (SS12U) of the second sub-side (SS12) of the first side (SS1) and the radius of curvature of the upper portion (SS32U) of the sixth sub-side (SS32) of the third side (SS3) may be less than approximately 30 μm. The difference between the radius of curvature of the upper portion (SS12U) of the second sub-side (SS12) of the first side (SS1) and the radius of curvature of the upper portion (SS42U) of the eighth sub-side (SS42) of the fourth side (SS4) may be less than approximately 30 μm. The difference between the radius of curvature of the upper portion (SS22U) of the fourth sub-side (SS22) of the second side (SS2) and the radius of curvature of the upper portion (SS32U) of the sixth sub-side (SS32) of the third side (SS3) may be less than approximately 30 μm. The difference between the radius of curvature of the upper portion (SS22U) of the fourth sub-side (SS22) of the second side (SS2) and the radius of curvature of the upper portion (SS42U) of the eighth sub-side (SS42) of the fourth side (SS4) may be less than approximately 30 μm. The difference between the radius of curvature of the upper portion (SS32U) of the sixth sub-side (SS32) of the third side (SS3) and the radius of curvature of the upper portion (SS42U) of the eighth sub-side (SS42) of the fourth side (SS4) may be less than approximately 30 μm.

[0400] As shown in FIGS. 26a to 26d, the difference in the radius of curvature between the side surfaces (SS1, SS2, SS3, SS4) of the substrate (SUB) of the display panel (100) may be minimal. As a result, the mechanical strength can be maintained uniformly depending on the positions of the side surfaces (SS1, SS2, SS3, SS4) of the substrate (SUB) of the display panel (100).

[0401] Fig. 27 is a perspective view showing a display device according to another embodiment. Fig. 28 is a plan view showing a display panel and driving circuits according to another embodiment. Fig. 29 is a cross-sectional view showing an example of a display panel cut along line X6-X6' of Fig. 27. Fig. 30 is a cross-sectional view showing an example of a display device with a bent circuit board in Fig. 29.

[0402] Referring to FIGS. 27 to 30, a display device (10) according to one embodiment may include a through hole (TH). The through hole (TH) is a hole that can transmit light, and may be a physical hole that penetrates not only the display panel (100) but also the panel lower cover (PB) and the polarizing film (PF). However, the embodiment of the present specification is not limited thereto, and the through hole (TH) may be an optical hole that transmits light without penetrating the panel lower cover (PB) but without penetrating the display panel (100) and the polarizing film (PF). The cover window (CW) may be arranged to cover the through hole (TH).

[0403] The through hole (TH) can penetrate the substrate (SUB), thin film transistor layer (TFTL), encapsulation layer (ENC), and sensor electrode layer (SENL) of the display panel (100).

[0404] An electronic device including a display device (10) according to one embodiment may further include an optical device (OPD) disposed in a through hole (TH). The electronic device according to one embodiment may be a portable electronic device such as a mobile phone, a smart phone, a tablet personal computer (PC), a smart watch, a watch phone, a mobile communication terminal, an electronic notebook, an electronic book, a portable multimedia player (PMP), a navigation device, an Ultra Mobile PC (UMPC), etc., as well as a television, a laptop, a monitor, a billboard, an Internet of Things (IOT) device.

[0405] The optical device (OPD) may be spaced apart from the display panel (100), the panel lower cover (PB), and the polarizing film (PF). The optical device (OPD) may be an optical sensor that detects light incident through a through hole (TH), such as a proximity sensor, an illuminance sensor, and a camera sensor.

[0406] Fig. 31 is a layout diagram showing in detail an example of area I of Fig. 28. Fig. 31 shows an example of the layout of a through hole, a weapon sealing area, a wiring area, and a display area of ​​a display panel according to one embodiment.

[0407] Referring to FIG. 31, a display panel (100) according to one embodiment includes an inorganic encapsulation area (IEA) surrounding a through hole (TH), and a wiring area (WLA) surrounding the inorganic encapsulation area (IEA).

[0408] The inorganic encapsulation area (IEA) may be a layer that prevents oxygen or moisture from penetrating into the light emitting element layer (EML) of the display layer (DISL) due to the through hole (TH) by having the first encapsulation inorganic film (TFE1) and the second encapsulation inorganic film (TFE3) of the encapsulation layer (ENC) come into contact with each other.

[0409] The inorganic encapsulation area (IEA) may include at least one dam, at least one tip, and at least one groove. For example, the inorganic encapsulation area (IEA) may include a first dam (HDAM1), a second dam (HDAM2), first to eighth tips (T1 to T8), and first to third grooves (GR1 to GR3), as shown in FIG. 34.

[0410] The first tip (T1) and the second tip (T2) may be positioned closer to the wiring area (WLA) than the first dam (HDAM1). The first tip (T1) may be positioned closer to the wiring area (WLA) than the second tip (T2). The second tip (T2) may be positioned between the first tip (T1) and the first dam (HDAM1).

[0411] The third tip (T3), the fourth tip (T4), the fifth tip (T5), and the sixth tip (T6) may be positioned between the first dam (HDAM1) and the second dam (HDAM2). At least a portion of the third tip (T3) may overlap the first dam (HDAM1) in the third direction (Z-axis direction).

[0412] The seventh tip (T7) and the eighth tip (T8) may be positioned closer to the through hole (TH) than the second dam (HDAM2). At least a portion of the seventh tip (T7) may overlap the second dam (HDAM2) in the third direction (Z-axis direction). The distance between the eighth tip (T8) and the through hole (TH) may be approximately 50 μm.

[0413] The first groove (GR1) may be positioned between the first tip (T1) and the second tip (T2). The second groove (GR2) may be positioned between the third tip (T3) and the fourth tip (T4). The third groove (GR3) may be positioned between the fifth tip (T5) and the sixth tip (T6).

[0414] The wiring area (WLA) may be an area where bypass wirings are arranged through through holes (TH). Some of the bypass wirings may be connected to data wirings, and others may be connected to second power wirings to which a second power voltage higher than the first power voltage is applied. Still others may be connected to scan wirings. The wiring area (WLA) may be surrounded by a display area (DA).

[0415] Fig. 32 is a cross-sectional view showing an example of a display panel cut along line X7-X7' of Fig. 31. Fig. 33 is a cross-sectional view showing an example of a display panel cut along line X8-X8' of Fig. 31. Fig. 34 is a cross-sectional view showing in detail an example of area J of Fig. 32.

[0416] Fig. 32 shows a first side edge (TEG1) and a second side edge (TEG2) of a through hole (TH) facing each other in a first direction (X-axis direction). Fig. 33 shows a third side edge (TEG3) and a fourth side edge (TEG4) of a through hole (TH) facing each other in a second direction (Y-axis direction).

[0417] Referring to FIGS. 32 and 33, a first hole side surface (SSH1) formed at a first side edge (TEG1) of the through hole (TH), a second hole side surface (SSH2) formed at a second side edge (TEG2) of the through hole (TH), a third hole side surface (SSH3) formed at a third side edge (TEG3) of the through hole (TH), and a fourth hole side surface (SSH4) formed at a fourth side edge (TEG4) of the through hole (TH) may have a curved shape. Here, the first side edge (TEG1) of the through hole (TH) may point to a left side edge of the through hole (TH), and the second side edge (TEG2) of the through hole (TH) may point to a right side edge of the through hole (TH). In addition, the third side edge (TEG3) of the through hole (TH) may point to the upper side edge of the through hole (TH), and the fourth side edge (TEG4) of the through hole (TH) may point to the lower side edge of the through hole (TH). In one embodiment, when the through hole (TH) is circular or oval as in FIG. 31, the through hole (TH) is described as having a plurality of side edges including the first to fourth side edges (TEG1, TEG2, TEG3, TEG4) as well as a plurality of hole side edges including the first to fourth side edges (SSH1, SSH2, SSH3, SSH4), but the through hole (TH) can be viewed as being defined as one continuous side. However, as shown in FIGS. 32 and 33, each inner edge of a through hole (TH) in a cross-section along a diameter or axis (major axis or minor axis) may be referred to as one edge (TEG1, TEG2, TEG3, or TEG4) on which a corresponding hole side surface (SSH1, SSH2, SSH3, or SSH4) is formed.

[0418] Referring to FIG. 9 and FIG. 34, the first dummy pattern (DP1) may include the same material as the second gate metal layer including the second capacitor electrode (CAE2) of the capacitor (Cst), and may be disposed on the same layer. For example, the first dummy pattern (DP1) may be disposed on the first interlayer insulating film (141). The first dummy pattern (DP1) may be formed as a single layer or multiple layers made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0419] The second dummy pattern (DP2) may include the same material as the first data metal layer including the first connection electrode (CE1) and data lines, and may be disposed on the same layer. For example, the second dummy pattern (DP2) may be disposed on the second interlayer insulating film (142). The second dummy pattern (DP2) may be formed as a single layer or multiple layers made of one or an alloy of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu).

[0420] The second dummy pattern (DP2) can overlap the first dummy pattern (DP1) in the third direction (Z-axis direction).

[0421] The first to eighth tips (T1 to T8) may include the same material as the second data metal layer including the second connection electrode (CE2) and may be disposed on the same layer. For example, the first to eighth tips (T1 to T8) may be disposed on the first organic film (160). The first to eighth tips (T1 to T8) may be formed as a single layer or multiple layers made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0422] Each of the first to eighth tips (T1 to T8) may be connected to a second dummy pattern (DP2) through a contact hole penetrating the first organic film (160). Each of the first to eighth tips (T1 to T8) may include an eaves structure in which the upper and lower surfaces of each of the first to eighth tips (T1 to T8) are exposed without being covered by the first organic film (160), the second organic film (180), the first dam (HDAM1), and the second dam (HDAM2). The fourth tip (T4) and the fifth tip (T5) may be formed integrally. Each of the first to eighth tips (T1 to T8) may be a protruding pattern or a trench pattern for forming a groove (or trench).

[0423] The eighth tip (T8) may be the outermost structure adjacent to the first side edge (TEG1) of the through hole (TH). The distance from the eighth tip (T8), which is the outermost structure, to the first side edge (TEG1) of the through hole (TH) may be approximately 300 μm.

[0424] In FIG. 34, the eighth tip (T8) is exemplified as the outermost structure adjacent to the first side edge (TEG1) of the through hole (TH), but the embodiment of the present specification is not limited thereto. For example, when the seventh tip (T7) and the eighth tip (T8) are omitted, the outermost structure adjacent to the first side edge (TEG1) of the through hole (TH) may be a second dam (HDAM2) for preventing the encapsulation organic film (TFE2) of the encapsulation layer (ENC) from overflowing. Alternatively, when the seventh tip (T7) and the eighth tip (T8) are omitted, the outermost structure adjacent to the first side edge (TEG1) of the through hole (TH) may be a groove for disconnecting the light-emitting layer (172) and the common electrode (173).

[0425] A first groove (GR1) may be formed between a first tip (T1) and a second tip (T2), a second groove (GR2) may be formed between a third tip (T3) and a fourth tip (T4), and a third groove (GR3) may be formed between a fifth tip (T5) and a sixth tip (T6). The first groove (GR1) may have eaves structures formed by the first tip (T1) and the second tip (T2), the second groove (GR2) may have eaves structures formed by the third tip (T3) and the fourth tip (T4), and the third groove (GR3) may have eaves structures formed by the fifth tip (T5) and the sixth tip (T6).

[0426] The light-emitting layer (172) is deposited by evaporation, and the common electrode (173) is deposited by sputtering, so the step coverage is low and thus they can be arranged to be disconnected at each of the first to third grooves (GR1, GR2, GR3). In contrast, the first sealing inorganic film (TFE1) and the third sealing inorganic film (TFE3) are deposited by chemical vapor deposition, atomic layer deposition, etc., so the step coverage is high and thus they can be connected without disconnection at each of the first to third grooves (GR1, GR2, GR3). The step coverage refers to the ratio of the degree to which the thin film is deposited at an inclined portion to the degree to which the thin film is deposited at a flat portion. In each of the first to third grooves (GR1, GR2, GR3), a light-emitting layer (172), a disconnected light-emitting layer residue (172_D), and a common electrode (173) and a disconnected common electrode residue (173_D) may be arranged. A portion of the residue (TFE1_D) of the first sealing inorganic layer (TFE1) arranged in each of the first to third grooves (GR1, GR2, GR3) is illustrated in FIG. 34.

[0427] The first dam (HDAM1) may include first to fourth sub-dams (HDA1, HDA2, HDA3, HDA4). The first sub-dam (HDA1) may be disposed on the first organic film (160) and may include the same material as the second organic film (180). The first sub-dam (HDA1) may be disposed on the second tip (T2) and the third tip (T3). The second sub-dam (HDA2) may be disposed on the first sub-dam (HDA1) and may include the same material as the bank (190). The third sub-dam (HDA3) and the fourth sub-dam (HDA4) may be disposed on the second sub-dam (HDA2) and may include the same material as the spacer (191), but are not limited thereto. The fourth sub-dam (HDA4) may be disposed closer to the through hole (TH) than the third sub-dam (HDA3). The thickness of the fourth sub-dam (HDA4) may be greater than the thickness of the third sub-dam (HDA3).

[0428] The second dam (HDAM2) may include fifth to seventh sub-dams (HDA5, HDA6, HDA7). The fifth sub-dam (HDA5) may be disposed on the first organic film (160) and may include the same material as the second organic film (180). The fifth sub-dam (HDA5) may be disposed on the seventh tip (T7). The sixth sub-dam (HDA6) may be disposed on the fifth sub-dam (HDA5) and may include the same material as the bank (190). The seventh sub-dam (HDA7) may be disposed on the sixth sub-dam (HDA6) and may include the same material as the spacer (191), but is not limited thereto.

[0429] By the first dam (HDAM1) and the second dam (HDAM2), the encapsulating organic film (TFE2) can be prevented from overflowing into the through hole (TH).

[0430] The light-emitting layer residue (172_D), the common electrode residue (173_D), the first encapsulating inorganic film (TFE1), and the second encapsulating inorganic film (TFE3) may extend to the edge (TEG) of the through hole (TH). An end of the light-emitting layer residue (172_D), an end of the common electrode residue (173_D), an end of the first encapsulating inorganic film (TFE1), or an end of the second encapsulating inorganic film (TFE3) may coincide with the edge (TEG) of the through hole (TH).

[0431] As shown in Fig. 34, since the light-emitting layer (172) and the common electrode (173) are disconnected in each of the first to third grooves (GR1, GR2, GR3) formed by the first to eighth tips (T1 to T8), the light-emitting layer (172) and the common electrode (173) exposed to the through hole (TH) can be prevented from becoming a path for oxygen, moisture, etc. to penetrate.

[0432] Figures 35a to 35d are enlarged cross-sectional views showing examples of the first to fourth hole side surfaces illustrated in Figures 32 and 33. Figure 35a shows cross-sections of a first hole side surface (SSH1) disposed at a first side edge (TEG1) of a through hole (TH), Figure 35b shows cross-sections of a second hole side surface (SSH2) disposed at a second side edge (TEG2) of a through hole (TH), Figure 35c shows cross-sections of a third hole side surface (SSH3) disposed at a third side edge (TEG3) of a through hole (TH), and Figure 35d shows cross-sections of a fourth hole side surface (SSH4) disposed at a fourth side edge (TEG4) of a through hole (TH).

[0433] Referring to Fig. 35a, the first hole side surface (SSH1) may have a curved shape with a varying radius of curvature. The curved shape of the upper portion of the first hole side surface (SSH1) (e.g., the first hole upper portion, SSH1U) and the curved shape of the lower portion of the first hole side surface (SSH1) (e.g., the first hole lower portion, SSH1B) may be different. The upper portion (SSH1U) of the first hole side surface (SSH1) refers to an area positioned above the center of the first hole side surface (SSH1) (e.g., the first hole center, SSH1C). The lower portion (SSH1B) of the first hole side surface (SSH1) refers to an area positioned below the center (SSH1C) of the first hole side surface (SSH1).

[0434] The radius of curvature of the upper portion (SSH1U) of the first hole side (SSH1) and the radius of curvature of the lower portion (SSH1B) of the first hole side (SSH1) may be different. For example, the radius of curvature of the lower portion (SSH1B) of the first hole side (SSH1) may be smaller than the radius of curvature of the upper portion (SSH1U) of the first hole side (SSH1).

[0435] The radius of curvature of the upper portion (SSH1U) of the first hole side surface (SSH1) can be defined as the radius of curvature of a curve passing through the center (SSH1C) of the first hole side surface (SSH1), the upper end (SSH1UE) of the first hole side surface (SSH1), and the upper center (e.g., the first hole upper center, SSH1UC) of the first hole side surface (SSH1). The radius of curvature of the lower portion (SSH1B) of the first hole side surface (SSH1) can be defined as the radius of curvature of a curve passing through the center (SSH1C) of the first hole side surface (SSH1), the lower end (SSH1BE) of the first hole side surface (SSH1), and the lower center (e.g., the first hole lower center, SSH1BC) of the first hole side surface (SSH1).

[0436] Additionally, the radius of curvature of the central region of the first hole side (SSH1) may be different from the radius of curvature of the upper portion (SSH1U) of the first hole side (SSH1) and the radius of curvature of the lower portion (SSH1B) of the first hole side (SSH1). The radius of curvature of the central region of the first hole side (SSH1) may be defined as the radius of curvature of a curve passing through the center (SSH1C) of the first hole side (SSH1), the upper center (SSH1UC) of the first hole side (SSH1), and the lower center (SSH1BC) of the first hole side (SSH1).

[0437] Additionally, the difference between the curvature radius of the upper central region (SSH1UA) of the first hole side (SSH1) and the curvature radius of the lower central region (SSH1BA) of the first hole side (SSH1) may be smaller than the difference between the curvature radius of the upper region (SSH1U) of the first hole side (SSH1) and the curvature radius of the lower region (SSH1B) of the first hole side (SSH1). The curvature radius of the upper central region (SSH1UA) of the first hole side (SSH1) and the curvature radius of the lower central region (SSH1BA) of the first hole side (SSH1) may be substantially the same. Alternatively, the difference between the curvature radius of the upper central region (SSH1UA) of the first hole side (SSH1) and the curvature radius of the lower central region (SSH1BA) of the first hole side (SSH1) may be 30 μm or less.

[0438] The radius of curvature of the upper central area (SSH1UA) of the first hole side (SSH1) can be defined as the radius of curvature of a curve passing through the center (SSH1C) of the first hole side (SSH1), the upper center (SSH1UC) of the first hole side (SSH1), and the first point (PPH1_1) of the first hole side (SSH1). The radius of curvature of the lower central area (SSH1BA) of the first hole side (SSH1) can be defined as the radius of curvature of a curve passing through the center (SSH1C) of the first hole side (SSH1), the lower center (SSH1BC) of the first hole side (SSH1), and the second point (PPH2_1) of the first hole side (SSH1). The first point (PPH1_1) of the first hole side (SSH1) may be defined as a midpoint between the center (SSH1C) of the first hole side (SSH1) and the upper center (SSH1UC) of the first hole side (SSH1). The second point (PPH2_1) of the first hole side (SSH1) may be defined as a midpoint between the center (SSH1C) of the first hole side (SSH1) and the lower center (SSH1BC) of the first hole side (SSH1).

[0439] Referring to Fig. 35b, the second hole side surface (SSH2) may have a curved shape with a varying radius of curvature. The curved shape of the upper portion of the second hole side surface (SSH2) (e.g., the second hole upper portion, SSH2U) and the curved shape of the lower portion of the second hole side surface (SSH2) (e.g., the second hole lower portion, SSH2B) may be different. The upper portion (SSH2U) of the second hole side surface (SSH2) refers to an area positioned above the center of the second hole side surface (SSH2) (e.g., the second hole center, SSH2C). The lower portion (SSH2B) of the second hole side surface (SSH2) refers to an area positioned below the center (SSH2C) of the second hole side surface (SSH2).

[0440] The radius of curvature of the upper portion (SSH2U) of the second hole side (SSH2) and the radius of curvature of the lower portion (SSH2B) of the second hole side (SSH2) may be different. For example, the radius of curvature of the lower portion (SSH2B) of the second hole side (SSH2) may be smaller than the radius of curvature of the upper portion (SSH2U) of the second hole side (SSH2).

[0441] The radius of curvature of the upper portion (SSH2U) of the second hole side surface (SSH2) can be defined as the radius of curvature of a curve passing through the center (SSH2C) of the second hole side surface (SSH2), the upper end (SSH2UE) of the second hole side surface (SSH2), and the upper center (e.g., the second hole upper center, SSH2UC) of the second hole side surface (SSH2). The radius of curvature of the lower portion (SSH2B) of the second hole side surface (SSH2) can be defined as the radius of curvature of a curve passing through the center (SSH2C) of the second hole side surface (SSH2), the lower end (SSH2BE) of the second hole side surface (SSH2), and the lower center (e.g., the second hole lower center, SSH2BC) of the second hole side surface (SSH2).

[0442] Additionally, the radius of curvature of the central region of the second hole side (SSH2) may be different from the radius of curvature of the upper portion (SSH2U) of the second hole side (SSH2) and the radius of curvature of the lower portion (SSH2B) of the second hole side (SSH2). The radius of curvature of the central region of the second hole side (SSH2) may be defined as the radius of curvature of a curve passing through the center (SSH2C) of the second hole side (SSH2), the upper center (SSH2UC) of the second hole side (SSH2), and the lower center (SSH2BC) of the second hole side (SSH2).

[0443] Additionally, the difference between the curvature radius of the upper central region (SSH2UA) of the second hole side surface (SSH2) and the curvature radius of the lower central region (SSH2BA) of the second hole side surface (SSH2) may be smaller than the difference between the curvature radius of the upper region (SSH2U) of the second hole side surface (SSH2) and the curvature radius of the lower region (SSH2B) of the second hole side surface (SSH2). The curvature radius of the upper central region (SSH2UA) of the second hole side surface (SSH2) and the curvature radius of the lower central region (SSH2BA) of the second hole side surface (SSH2) may be substantially the same. Alternatively, the difference between the curvature radius of the upper central region (SSH2UA) of the second hole side surface (SSH2) and the curvature radius of the lower central region (SSH2BA) of the second hole side surface (SSH2) may be 30 μm or less.

[0444] The radius of curvature of the upper central area (SSH2UA) of the second hole side (SSH2) can be defined as the radius of curvature of a curve passing through the center (SSH2C) of the second hole side (SSH2), the upper center (SSH2UC) of the second hole side (SSH2), and the first point (PPH1_2) of the second hole side (SSH2). The radius of curvature of the lower central area (SSH2BA) of the second hole side (SSH2) can be defined as the radius of curvature of a curve passing through the center (SSH2C) of the second hole side (SSH2), the lower center (SSH2BC) of the second hole side (SSH2), and the second point (PPH2_2) of the second hole side (SSH2). The first point (PPH1_2) of the second hole side (SSH2) may be defined as a midpoint between the center (SSH2C) of the second hole side (SSH2) and the upper center (SSH2UC) of the second hole side (SSH2). The second point (PPH2_2) of the second hole side (SSH2) may be defined as a midpoint between the center (SSH2C) of the second hole side (SSH2) and the lower center (SSH2BC) of the second hole side (SSH2).

[0445] Referring to Fig. 35c, the third hole side surface (SSH3) may have a curved shape with a varying radius of curvature. The curved shape of the upper portion of the third hole side surface (SSH3) (e.g., the third hole upper portion, SSH3U) and the curved shape of the lower portion of the third hole side surface (SSH3) (e.g., the third hole lower portion, SSH3B) may be different. The upper portion (SSH3U) of the third hole side surface (SSH3) refers to an area positioned above the center of the third hole side surface (SSH3) (e.g., the third hole center, SSH3C). The lower portion (SSH3B) of the third hole side surface (SSH3) refers to an area positioned below the center (SSH3C) of the third hole side surface (SSH3).

[0446] The radius of curvature of the upper portion (SSH3U) of the third hole side (SSH3) and the radius of curvature of the lower portion (SSH3B) of the third hole side (SSH3) may be different. For example, the radius of curvature of the lower portion (SSH3B) of the third hole side (SSH3) may be smaller than the radius of curvature of the upper portion (SSH3U) of the third hole side (SSH3).

[0447] The radius of curvature of the upper portion (SSH3U) of the third hole side surface (SSH3) can be defined as the radius of curvature of a curve passing through the center (SSH3C) of the third hole side surface (SSH3), the upper end (SSH3UE) of the third hole side surface (SSH3), and the upper center (e.g., the third hole upper center, SSH3UC) of the third hole side surface (SSH3). The radius of curvature of the lower portion (SSH3B) of the third hole side surface (SSH3) can be defined as the radius of curvature of a curve passing through the center (SSH3C) of the third hole side surface (SSH3), the lower end (SSH3BE) of the third hole side surface (SSH3), and the lower center (e.g., the third hole lower center, SSH3BC) of the third hole side surface (SSH3).

[0448] Additionally, the radius of curvature of the central region of the third hole side (SSH3) may be different from the radius of curvature of the upper portion (SSH3U) of the third hole side (SSH3) and the radius of curvature of the lower portion (SSH3B) of the third hole side (SSH3). The radius of curvature of the central region of the third hole side (SSH3) may be defined as the radius of curvature of a curve passing through the center (SSH3C) of the third hole side (SSH3), the upper center (SSH3UC) of the third hole side (SSH3), and the lower center (SSH3BC) of the third hole side (SSH3).

[0449] Additionally, the difference between the curvature radius of the upper central region (SSH3UA) of the third hole side surface (SSH3) and the curvature radius of the lower central region (SSH3BA) of the third hole side surface (SSH3) may be smaller than the difference between the curvature radius of the upper region (SSH3U) of the third hole side surface (SSH3) and the curvature radius of the lower region (SSH3B) of the third hole side surface (SSH3). The curvature radius of the upper central region (SSH3UA) of the third hole side surface (SSH3) and the curvature radius of the lower central region (SSH3BA) of the third hole side surface (SSH3) may be substantially the same. Alternatively, the difference between the curvature radius of the upper central region (SSH3UA) of the third hole side surface (SSH3) and the curvature radius of the lower central region (SSH3BA) of the third hole side surface (SSH3) may be 30 μm or less.

[0450] The radius of curvature of the upper central area (SSH3UA) of the third hole side (SSH3) can be defined as the radius of curvature of a curve passing through the center (SSH3C) of the third hole side (SSH3), the upper center (SSH3UC) of the third hole side (SSH3), and the first point (PPH1_3) of the third hole side (SSH3). The radius of curvature of the lower central area (SSH3BA) of the third hole side (SSH3) can be defined as the radius of curvature of a curve passing through the center (SSH3C) of the third hole side (SSH3), the lower center (SSH3BC) of the third hole side (SSH3), and the second point (PPH2_3) of the third hole side (SSH3). The first point (PPH1_3) of the third hole side (SSH3) may be defined as a midpoint between the center (SSH3C) of the third hole side (SSH3) and the upper center (SSH3UC) of the third hole side (SSH3). The second point (PPH2_3) of the third hole side (SSH3) may be defined as a midpoint between the center (SSH3C) of the third hole side (SSH3) and the lower center (SSH3BC) of the third hole side (SSH3).

[0451] Referring to FIG. 35d, the fourth hole side surface (SSH4) may have a curved shape with a varying radius of curvature. The curved shape of the upper portion of the fourth hole side surface (SSH4) (e.g., the fourth hole upper portion, SSH4U) and the curved shape of the lower portion of the fourth hole side surface (SSH4) (e.g., the fourth hole lower portion, SSH4B) may be different. The upper portion (SSH4U) of the fourth hole side surface (SSH4) refers to an area positioned above the center of the fourth hole side surface (SSH4) (e.g., the fourth hole center, SSH4C). The lower portion (SSH4B) of the fourth hole side surface (SSH4) refers to an area positioned below the center (SSH4C) of the fourth hole side surface (SSH4).

[0452] The radius of curvature of the upper portion (SSH4U) of the fourth hole side (SSH4) and the radius of curvature of the lower portion (SSH4B) of the fourth hole side (SSH4) may be different. For example, the radius of curvature of the lower portion (SSH4B) of the fourth hole side (SSH4) may be smaller than the radius of curvature of the upper portion (SSH4U) of the fourth hole side (SSH4).

[0453] The radius of curvature of the upper portion (SSH4U) of the fourth hole side surface (SSH4) can be defined as the radius of curvature of a curve passing through the center (SSH4C) of the fourth hole side surface (SSH4), the upper end (SSH4UE) of the fourth hole side surface (SSH4), and the upper center (e.g., the upper center of the fourth hole, SSH4UC) of the fourth hole side surface (SSH4). The radius of curvature of the lower portion (SSH4B) of the fourth hole side surface (SSH4) can be defined as the radius of curvature of a curve passing through the center (SSH4C) of the fourth hole side surface (SSH4), the lower end (SSH4BE) of the fourth hole side surface (SSH4), and the lower center (e.g., the lower center of the fourth hole, SSH4BC) of the fourth hole side surface (SSH4).

[0454] Additionally, the radius of curvature of the central region of the fourth hole side (SSH4) may be different from the radius of curvature of the upper portion (SSH4U) of the fourth hole side (SSH4) and the radius of curvature of the lower portion (SSH4B) of the fourth hole side (SSH4). The radius of curvature of the central region of the fourth hole side (SSH4) may be defined as the radius of curvature of a curve passing through the center (SSH4C) of the fourth hole side (SSH4), the upper center (SSH4UC) of the fourth hole side (SSH4), and the lower center (SSH4BC) of the fourth hole side (SSH4).

[0455] Additionally, the difference between the curvature radius of the upper central region (SSH4UA) of the fourth hole side surface (SSH4) and the curvature radius of the lower central region (SSH4BA) of the fourth hole side surface (SSH4) may be smaller than the difference between the curvature radius of the upper region (SSH4U) of the fourth hole side surface (SSH4) and the curvature radius of the lower region (SSH4B) of the fourth hole side surface (SSH4). The curvature radius of the upper central region (SSH4UA) of the fourth hole side surface (SSH4) and the curvature radius of the lower central region (SSH4BA) of the fourth hole side surface (SSH4) may be substantially the same. Alternatively, the difference between the curvature radius of the upper central region (SSH4UA) of the fourth hole side surface (SSH4) and the curvature radius of the lower central region (SSH4BA) of the fourth hole side surface (SSH4) may be 30 μm or less.

[0456] The radius of curvature of the upper central area (SSH4UA) of the fourth hole side surface (SSH4) can be defined as the radius of curvature of a curve passing through the center (SSH4C) of the fourth hole side surface (SSH4), the upper central area (SSH4UC) of the fourth hole side surface (SSH4), and the first point (PPH1_4) of the fourth hole side surface (SSH4). The radius of curvature of the lower central area (SSH4BA) of the fourth hole side surface (SSH4) can be defined as the radius of curvature of a curve passing through the center (SSH4C) of the fourth hole side surface (SSH4), the lower central area (SSH4BC) of the fourth hole side surface (SSH4), and the second point (PPH2_4) of the fourth hole side surface (SSH4). The first point (PPH1_4) of the fourth hole side (SSH4) may be defined as a midpoint between the center (SSH4C) of the fourth hole side (SSH4) and the upper center (SSH4UC) of the fourth hole side (SSH4). The second point (PPH2_4) of the fourth hole side (SSH4) may be defined as a midpoint between the center (SSH4C) of the fourth hole side (SSH4) and the lower center (SSH4BC) of the fourth hole side (SSH4).

[0457] Referring to FIGS. 35A to 35D, the curvature radius of the upper portion (SSH1U) of the first hole side surface (SSH1), the curvature radius of the upper portion (SSH2U) of the second hole side surface (SSH2), the curvature radius of the upper portion (SSH3U) of the third hole side surface (SSH3), and the curvature radius of the upper portion (SSH4U) of the fourth hole side surface (SSH4) may be similar to each other. For example, the curvature radius of the upper portion (SSH1U) of the first hole side surface (SSH1), the curvature radius of the upper portion (SSH2U) of the second hole side surface (SSH2), the curvature radius of the upper portion (SSH3U) of the third hole side surface (SSH3), and the curvature radius of the upper portion (SSH4U) of the fourth hole side surface (SSH4) may be 150 μm to 350 μm.

[0458] The difference between the curvature radius of the upper portion (SSH1U) of the first hole side surface (SSH1) and the curvature radius of the upper portion (SSH2U) of the second hole side surface (SSH2) may be less than approximately 30 μm. The difference between the curvature radius of the upper portion (SSH1U) of the first hole side surface (SSH1) and the curvature radius of the upper portion (SSH3U) of the third hole side surface (SSH3) may be less than approximately 30 μm. The difference between the curvature radius of the upper portion (SSH1U) of the first hole side surface (SSH1) and the curvature radius of the upper portion (SSH4U) of the fourth hole side surface (SSH4) may be less than approximately 30 μm. The difference between the curvature radius of the upper portion (SSH2U) of the second hole side surface (SSH2) and the curvature radius of the upper portion (SSH3U) of the third hole side surface (SSH3) may be less than approximately 30 μm. The difference between the radius of curvature of the upper portion (SSH2U) of the second hole side (SSH2) and the radius of curvature of the upper portion (SSH4U) of the fourth hole side (SSH4) may be less than approximately 30 μm. The difference between the radius of curvature of the upper portion (SSH3U) of the third hole side (SSH3) and the radius of curvature of the upper portion (SSH4U) of the fourth hole side (SSH4) may be less than approximately 30 μm.

[0459] In addition, referring to FIGS. 25a to 25d and FIGS. 35a to 35d, the curvature radius of the upper portion (SSH1U) of the first hole side surface (SSH1), the curvature radius of the upper portion (SSH2U) of the second hole side surface (SSH2), the curvature radius of the upper portion (SSH3U) of the third hole side surface (SSH3), and the curvature radius of the upper portion (SSH4U) of the fourth hole side surface (SSH4) may be similar to the curvature radius of the upper portion (SS1U) of the first side surface (SS1), the curvature radius of the upper portion (SS2U) of the second side surface (SS2), the curvature radius of the upper portion (SS3U) of the third side surface (SS3), and the curvature radius of the upper portion (SS4U) of the fourth side surface (SS4). For example, the difference between the curvature radii of the upper portion (SSH1U) of the first hole side (SSH1), the curvature radii of the upper portion (SSH2U) of the second hole side (SSH2), the curvature radii of the upper portion (SSH3U) of the third hole side (SSH3), and the curvature radii of the upper portion (SSH4U) of the fourth hole side (SSH4) and any one of the curvature radii of the upper portion (SS1U) of the first side (SS1), the curvature radii of the upper portion (SS2U) of the second side (SS2), the curvature radii of the upper portion (SS3U) of the third side (SS3), and the curvature radii of the upper portion (SS4U) of the fourth side (SS4) may be less than approximately 30 μm.

[0460] As shown in FIGS. 35a to 35d, the difference in the radius of curvature between the hole sides (SSH1, SSH2, SSH3, SSH4) of the substrate (SUB) of the display panel (100) may be minimal. As a result, the mechanical strength can be maintained uniformly depending on the positions of the hole sides (SSH1, SSH2, SSH3, SSH4) of the substrate (SUB) of the display panel (100).

[0461] Figures 36a to 36d are enlarged cross-sectional views showing further examples of the first to fourth hole side surfaces illustrated in Figures 32 and 33. Figure 36a shows cross-sections of the first hole side surface (SSH1), Figure 36b shows cross-sections of the second hole side surface (SSH2), Figure 36c shows cross-sections of the third side surface (SS3), and Figure 36d shows cross-sections of the fourth side surface (SSH4).

[0462] Referring to FIG. 36a, the first hole side surface (SSH1) may have a first sub-hole side surface (SSH11) having a planar or curved shape and a second sub-hole side surface (SSH12) having a curved shape with a varying radius of curvature. The length of the first sub-hole side surface (SSH11) may be shorter than the length of the second sub-hole side surface (SSH12).

[0463] The first sub-hole side surface (SSH11) may be connected to the upper surface (US), and the second sub-hole side surface (SSH12) may be connected to the lower surface (BS). The angle between the first sub-hole side surface (SSH11) and the upper surface (US) may be a right angle or an obtuse angle close to a right angle.

[0464] The curved shape of the upper portion (SSH12U) of the second sub-hole side (SSH12) and the curved shape of the lower portion (SSH12B) of the second sub-hole side (SSH12) may be different. The upper portion (SSH12U) of the second sub-hole side (SSH12) refers to an area positioned above the center (SSH12C) of the second sub-hole side (SSH12). The lower portion (SSH12B) of the second sub-hole side (SSH12) refers to an area positioned below the center (SSH12C) of the second sub-hole side (SSH12).

[0465] The radius of curvature of the upper portion (SSH12U) of the second sub-hole side (SSH12) and the radius of curvature of the lower portion (SSH12B) of the second sub-hole side (SSH12) may be different. For example, the radius of curvature of the lower portion (SSH12B) of the second sub-hole side (SSH12) may be smaller than the radius of curvature of the upper portion (SSH12U) of the second sub-hole side (SSH12).

[0466] The radius of curvature of the upper portion (SSH12U) of the second sub-hole side surface (SSH12) may be defined as the radius of curvature of a curve passing through the center (SSH12C) of the second sub-hole side surface (SSH12), the upper end (SSH12UE) of the second sub-hole side surface (SSH12), and the upper center (SSH12UC) of the second sub-hole side surface (SSH12). The radius of curvature of the lower portion (SSH12B) of the second sub-hole side surface (SSH12) may be defined as the radius of curvature of a curve passing through the center (SSH12C) of the second sub-hole side surface (SSH12), the lower end (SSH12BE) of the second sub-hole side surface (SSH12), and the lower center (SSH12BC) of the second sub-hole side surface (SSH12).

[0467] Additionally, the radius of curvature of the central region of the second sub-hole side (SSH12) may be different from the radius of curvature of the upper portion (SSH12U) of the second sub-hole side (SSH12) and the radius of curvature of the lower portion (SSH12B) of the second sub-hole side (SSH12). The radius of curvature of the central region of the second sub-hole side (SSH12) may be defined as the radius of curvature of a curve passing through the center (SSH12C) of the second sub-hole side (SSH12), the upper center (SSH12UC) of the second sub-hole side (SSH12), and the lower center (SSH12BC) of the second sub-hole side (SSH12).

[0468] Additionally, the difference between the curvature radius of the upper central region (SSH12UA) of the second sub-hole side surface (SSH12) and the curvature radius of the lower central region (SSH12BA) of the second sub-hole side surface (SSH12) may be smaller than the difference between the curvature radius of the upper region (SSH12U) of the second sub-hole side surface (SSH12) and the curvature radius of the lower region (SSH12B) of the second sub-hole side surface (SSH12). The curvature radius of the upper central region (SSH12UA) of the second sub-hole side surface (SSH12) and the curvature radius of the lower central region (SSH12BA) of the second sub-hole side surface (SSH12) may be substantially the same. Alternatively, the difference between the radius of curvature of the upper central area (SSH12UA) of the second sub-hole side (SSH12) and the radius of curvature of the lower central area (SSH12BA) of the second sub-hole side (SSH12) may be 30 μm or less.

[0469] The radius of curvature of the upper center area (SSH12UA) of the second sub-hole side surface (SSH12) can be defined as the radius of curvature of a curve passing through the center (SSH12C) of the second sub-hole side surface (SSH12), the upper center (SSH12UC) of the second sub-hole side surface (SSH12), and the first point (PPH12_1) of the second sub-hole side surface (SSH12). The radius of curvature of the lower center (SSH12BA) of the second sub-hole side surface (SSH12) can be defined as the radius of curvature of a curve passing through the center (SSH12C) of the second sub-hole side surface (SSH12), the lower center area (SSH12BC) of the second sub-hole side surface (SSH12), and the second point (PPH12_2) of the second sub-hole side surface (SSH12). The first point (PPH12_1) of the second sub-hole side (SSH12) may be defined as a midpoint between the center (SSH12C) of the second sub-hole side (SSH12) and the upper center (SSH12UC) of the second sub-hole side (SSH12). The second point (PPH12_2) of the second sub-hole side (SSH12) may be defined as a midpoint between the center (SSH12C) of the second sub-hole side (SSH12) and the lower center (SSH12BC) of the second sub-hole side (SSH12).

[0470] Referring to FIG. 36b, the second hole side surface (SSH2) may have a third sub-hole side surface (SSH21) having a planar or curved shape and a fourth sub-hole side surface (SSH22) having a curved shape with a varying radius of curvature. The length of the third sub-hole side surface (SSH21) may be shorter than the length of the fourth sub-hole side surface (SSH22).

[0471] The third sub-hole side surface (SSH21) may be connected to the upper surface (US), and the fourth sub-hole side surface (SSH22) may be connected to the lower surface (BS). The angle between the third sub-hole side surface (SSH21) and the upper surface (US) may be a right angle or an obtuse angle close to a right angle.

[0472] The curved shape of the upper portion (SSH22U) of the fourth sub-hole side (SSH22) and the curved shape of the lower portion (SSH22B) of the fourth sub-hole side (SSH22) may be different. The upper portion (SSH22U) of the fourth sub-hole side (SSH22) refers to an area positioned above the center (SSH22C) of the fourth sub-hole side (SSH22). The lower portion (SSH22B) of the fourth sub-hole side (SSH22) refers to an area positioned below the center (SSH22C) of the fourth sub-hole side (SSH22).

[0473] The radius of curvature of the upper portion (SSH22U) of the fourth sub-hole side surface (SSH22) and the radius of curvature of the lower portion (SSH22B) of the fourth sub-hole side surface (SSH22) may be different. For example, the radius of curvature of the lower portion (SSH22B) of the fourth sub-hole side surface (SSH22) may be smaller than the radius of curvature of the upper portion (SSH22U) of the fourth sub-hole side surface (SSH22).

[0474] The radius of curvature of the upper portion (SSH22U) of the fourth sub-hole side surface (SSH22) can be defined as the radius of curvature of a curve passing through the center (SSH22C) of the fourth sub-hole side surface (SSH22), the upper end (SSH22UE) of the fourth sub-hole side surface (SSH22), and the upper center (SSH22UC) of the fourth sub-hole side surface (SSH22). The radius of curvature of the lower portion (SSH22B) of the fourth sub-hole side surface (SSH22) can be defined as the radius of curvature of a curve passing through the center (SSH22C) of the fourth sub-hole side surface (SSH22), the lower end (SSH22BE) of the fourth sub-hole side surface (SSH22), and the lower center (SSH22BC) of the fourth sub-hole side surface (SSH22).

[0475] Additionally, the radius of curvature of the central region of the fourth sub-hole side surface (SSH22) may be different from the radius of curvature of the upper portion (SSH22U) of the fourth sub-hole side surface (SSH22) and the radius of curvature of the lower portion (SSH22B) of the fourth sub-hole side surface (SSH22). The radius of curvature of the central region of the fourth sub-hole side surface (SSH22) may be defined as the radius of curvature of a curve passing through the center (SSH22C) of the fourth sub-hole side surface (SSH22), the upper center (SSH22UC) of the fourth sub-hole side surface (SSH22), and the lower center (SSH22BC) of the fourth sub-hole side surface (SSH22).

[0476] Additionally, the difference between the radius of curvature of the upper central region (SSH22UA) of the fourth sub-hole side surface (SSH22) and the radius of curvature of the lower central region (SSH22BA) of the fourth sub-hole side surface (SSH22) may be smaller than the difference between the radius of curvature of the upper region (SSH22U) of the fourth sub-hole side surface (SSH22) and the radius of curvature of the lower region (SSH22B) of the fourth sub-hole side surface (SSH22). The radius of curvature of the upper central region (SSH22UA) of the fourth sub-hole side surface (SSH22) and the radius of curvature of the lower central region (SSH22BA) of the fourth sub-hole side surface (SSH22) may be substantially the same. Alternatively, the difference between the radius of curvature of the upper central area (SSH22UA) of the fourth sub-hole side (SSH22) and the radius of curvature of the lower central area (SSH22BA) of the fourth sub-hole side (SSH22) may be 30 μm or less.

[0477] The radius of curvature of the upper central area (SSH22UA) of the fourth sub-hole side surface (SSH22) can be defined as the radius of curvature of a curve passing through the center (SSH22C) of the fourth sub-hole side surface (SSH22), the upper central area (SSH22UC) of the fourth sub-hole side surface (SSH22), and the first point (PPH22_1) of the fourth sub-hole side surface (SSH22). The radius of curvature of the lower central area (SSH22BA) of the fourth sub-hole side surface (SSH22) can be defined as the radius of curvature of a curve passing through the center (SSH22C) of the fourth sub-hole side surface (SSH22), the lower central area (SSH22BC) of the fourth sub-hole side surface (SSH22), and the second point (PPH22_2) of the fourth sub-hole side surface (SSH22). The first point (PPH22_1) of the fourth sub-hole side (SSH22) may be defined as a midpoint between the center (SSH22C) of the fourth sub-hole side (SSH22) and the upper center (SSH22UC) of the fourth sub-hole side (SSH22). The second point (PPH22_2) of the fourth sub-hole side (SSH22) may be defined as a midpoint between the center (SSH22C) of the fourth sub-hole side (SSH22) and the lower center (SSH22BC) of the fourth sub-hole side (SSH22).

[0478] Referring to FIG. 36c, the third hole side surface (SSH3) may have a fifth sub-hole side surface (SSH31) having a planar or curved shape and a sixth sub-hole side surface (SSH32) having a curved shape with a varying radius of curvature. The length of the fifth sub-hole side surface (SSH31) may be shorter than the length of the sixth sub-hole side surface (SSH32).

[0479] The fifth sub-hole side surface (SSH31) may be connected to the upper surface (US), and the sixth sub-hole side surface (SSH32) may be connected to the lower surface (BS). The angle between the fifth sub-hole side surface (SSH31) and the upper surface (US) may be a right angle or an obtuse angle close to a right angle.

[0480] The curved shape of the upper portion (SSH32U) of the 6th sub-hole side (SSH32) and the curved shape of the lower portion (SSH32B) of the 6th sub-hole side (SSH32) may be different. The upper portion (SSH32U) of the 6th sub-hole side (SSH32) refers to an area positioned above the center (SSH32C) of the 6th sub-hole side (SSH32). The lower portion (SSH32B) of the 6th sub-hole side (SSH32) refers to an area positioned below the center (SSH32C) of the 6th sub-hole side (SSH32).

[0481] The radius of curvature of the upper portion (SSH32U) of the sixth sub-hole side surface (SSH32) and the radius of curvature of the lower portion (SSH32B) of the sixth sub-hole side surface (SSH32) may be different. For example, the radius of curvature of the lower portion (SSH32B) of the sixth sub-hole side surface (SSH32) may be smaller than the radius of curvature of the upper portion (SSH32U) of the sixth sub-hole side surface (SSH32).

[0482] The radius of curvature of the upper portion (SSH32U) of the sixth sub-hole side surface (SSH32) may be defined as the radius of curvature of a curve passing through the center (SSH32C) of the sixth sub-hole side surface (SSH32), the upper end (SSH32UE) of the sixth sub-hole side surface (SSH32), and the upper center (SSH32UC) of the sixth sub-hole side surface (SSH32). The radius of curvature of the lower portion (SSH32B) of the sixth sub-hole side surface (SSH32) may be defined as the radius of curvature of a curve passing through the center (SSH32C) of the sixth sub-hole side surface (SSH32), the lower end (SSH32BE) of the sixth sub-hole side surface (SSH32), and the lower center (SSH32BC) of the sixth sub-hole side surface (SSH32).

[0483] Additionally, the radius of curvature of the central region of the sixth sub-hole side surface (SSH32) may be different from the radius of curvature of the upper portion (SSH32U) of the sixth sub-hole side surface (SSH32) and the radius of curvature of the lower portion (SSH32B) of the sixth sub-hole side surface (SSH32). The radius of curvature of the central region of the sixth sub-hole side surface (SSH32) may be defined as the radius of curvature of a curve passing through the center (SSH32C) of the sixth sub-hole side surface (SSH32), the upper center (SSH32UC) of the sixth sub-hole side surface (SSH32), and the lower center (SSH32BC) of the sixth sub-hole side surface (SSH32).

[0484] Additionally, the difference between the curvature radius of the upper central region (SSH32UA) of the sixth sub-hole side surface (SSH32) and the curvature radius of the lower central region (SSH32BA) of the sixth sub-hole side surface (SSH32) may be smaller than the difference between the curvature radius of the upper region (SSH32U) of the sixth sub-hole side surface (SSH32) and the curvature radius of the lower region (SSH32B) of the sixth sub-hole side surface (SSH32). The curvature radius of the upper central region (SSH32UA) of the sixth sub-hole side surface (SSH32) and the curvature radius of the lower central region (SSH32BA) of the sixth sub-hole side surface (SSH32) may be substantially the same. Alternatively, the difference between the radius of curvature of the upper central area (SSH32UA) of the sixth sub-hole side (SSH32) and the radius of curvature of the lower central area (SSH32BA) of the sixth sub-hole side (SSH32) may be 30 μm or less.

[0485] The radius of curvature of the upper center area (SSH32UA) of the sixth sub-hole side surface (SSH32) can be defined as the radius of curvature of a curve passing through the center (SSH32C) of the sixth sub-hole side surface (SSH32), the upper center (SSH32UC) of the sixth sub-hole side surface (SSH32), and the first point (PPH32_1) of the sixth sub-hole side surface (SSH32). The radius of curvature of the lower center area (SSH32BA) of the sixth sub-hole side surface (SSH32) can be defined as the radius of curvature of a curve passing through the center (SSH32C) of the sixth sub-hole side surface (SSH32), the lower center (SSH32BC) of the sixth sub-hole side surface (SSH32), and the second point (PPH32_2) of the sixth sub-hole side surface (SSH32). The first point (PPH32_1) of the sixth sub-hole side (SSH32) may be defined as a midpoint between the center (SSH32C) of the sixth sub-hole side (SSH32) and the upper center (SSH32UC) of the sixth sub-hole side (SSH32). The second point (PPH32_2) of the sixth sub-hole side (SSH32) may be defined as a midpoint between the center (SSH32C) of the sixth sub-hole side (SSH32) and the lower center (SSH32BC) of the sixth sub-hole side (SSH32).

[0486] Referring to FIG. 36d, the fourth hole side surface (SSH4) may have a seventh sub-hole side surface (SSH41) having a planar or curved shape and an eighth sub-hole side surface (SSH42) having a curved shape with a varying radius of curvature. The length of the seventh sub-hole side surface (SSH41) may be shorter than the length of the eighth sub-hole side surface (SSH42).

[0487] The seventh sub-hole side surface (SSH41) may be connected to the upper surface (US), and the eighth sub-hole side surface (SSH42) may be connected to the lower surface (BS). The angle between the seventh sub-hole side surface (SSH41) and the upper surface (US) may be a right angle or an obtuse angle close to a right angle.

[0488] The curved shape of the upper portion (SSH42U) of the 8th sub-hole side surface (SSH42) and the curved shape of the lower portion (SSH42B) of the 8th sub-hole side surface (SSH42) may be different. The upper portion (SSH42U) of the 8th sub-hole side surface (SSH42) refers to an area positioned above the center (SSH42C) of the 8th sub-hole side surface (SSH42). The lower portion (SSH42B) of the 8th sub-hole side surface (SSH42) refers to an area positioned below the center (SSH42C) of the 8th sub-hole side surface (SSH42).

[0489] The radius of curvature of the upper portion (SSH42U) of the 8th sub-hole side surface (SSH42) and the radius of curvature of the lower portion (SSH42B) of the 8th sub-hole side surface (SSH42) may be different. For example, the radius of curvature of the lower portion (SSH42B) of the 8th sub-hole side surface (SSH42) may be smaller than the radius of curvature of the upper portion (SSH42U) of the 8th sub-hole side surface (SSH42).

[0490] The radius of curvature of the upper portion (SSH42U) of the 8th sub-hole side surface (SSH42) can be defined as the radius of curvature of a curve passing through the center (SSH42C) of the 8th sub-hole side surface (SSH42), the upper end (SSH42UE) of the 8th sub-hole side surface (SSH42), and the upper center (SSH42UC) of the 8th sub-hole side surface (SSH42). The radius of curvature of the lower portion (SSH42B) of the 8th sub-hole side surface (SSH42) can be defined as the radius of curvature of a curve passing through the center (SSH42C) of the 8th sub-hole side surface (SSH42), the lower end (SSH42BE) of the 8th sub-hole side surface (SSH42), and the lower center (SSH42BC) of the 8th sub-hole side surface (SSH42).

[0491] Additionally, the radius of curvature of the central region of the 8th sub-hole side surface (SSH42) may be different from the radius of curvature of the upper portion (SSH42U) of the 8th sub-hole side surface (SSH42) and the radius of curvature of the lower portion (SSH42B) of the 8th sub-hole side surface (SSH42). The radius of curvature of the central region of the 8th sub-hole side surface (SSH42) may be defined as the radius of curvature of a curve passing through the center (SSH42C) of the 8th sub-hole side surface (SSH42), the upper center (SSH42UC) of the 8th sub-hole side surface (SSH42), and the lower center (SSH42BC) of the 8th sub-hole side surface (SSH42).

[0492] Additionally, the difference between the curvature radius of the upper central region (SSH42UA) of the eighth sub-hole side surface (SSH42) and the curvature radius of the lower central region (SSH42BA) of the eighth sub-hole side surface (SSH42) may be smaller than the difference between the curvature radius of the upper region (SSH42U) of the eighth sub-hole side surface (SSH42) and the curvature radius of the lower region (SSH42B) of the eighth sub-hole side surface (SSH42). The curvature radius of the upper central region (SSH42UA) of the eighth sub-hole side surface (SSH42) and the curvature radius of the lower central region (SSH42BA) of the eighth sub-hole side surface (SSH42) may be substantially the same. Alternatively, the difference between the radius of curvature of the upper central area (SSH42UA) of the 8th sub-hole side (SSH42) and the radius of curvature of the lower central area (SSH42BA) of the 8th sub-hole side (SSH42) may be 30 μm or less.

[0493] The radius of curvature of the upper central area (SSH42UA) of the 8th sub-hole side surface (SSH42) can be defined as the radius of curvature of a curve passing through the center (SSH42C) of the 8th sub-hole side surface (SSH42), the upper central area (SSH42UC) of the 8th sub-hole side surface (SSH42), and the first point (PPH42_1) of the 8th sub-hole side surface (SSH42). The radius of curvature of the lower central area (SSH42BA) of the 8th sub-hole side surface (SSH42) can be defined as the radius of curvature of a curve passing through the center (SSH42C) of the 8th sub-hole side surface (SSH42), the lower central area (SSH42BC) of the 8th sub-hole side surface (SSH42), and the second point (PPH42_2) of the 8th sub-hole side surface (SSH42). The first point (PPH42_1) of the 8th sub-hole side (SSH42) may be defined as a midpoint between the center (SSH42C) of the 8th sub-hole side (SSH42) and the upper center (SSH42UC) of the 8th sub-hole side (SSH42). The second point (PPH42_2) of the 8th sub-hole side (SSH42) may be defined as a midpoint between the center (SSH42C) of the 8th sub-hole side (SSH42) and the lower center (SSH42BC) of the 8th sub-hole side (SSH42).

[0494] Referring to FIGS. 36a to 36d, the length of the first sub-hole side (SSH11) of the first hole side (SSH1), the length of the third sub-hole side (SSH21) of the second hole side (SSH2), the length of the fifth sub-hole side (SSH31) of the third hole side (SSH3), and the length of the seventh sub-hole side (SSH41) of the fourth hole side (SSH4) may be similar to each other. For example, the length of the first sub-hole side (SSH11) of the first hole side (SSH1), the length of the third sub-hole side (SSH21) of the second hole side (SSH2), the length of the fifth sub-hole side (SSH31) of the third hole side (SSH3), and the length of the seventh sub-hole side (SSH41) of the fourth hole side (SSH4) may each be greater than 10 μm and less than 30 μm.

[0495] For example, the difference between the length of the first sub-hole side (SSH11) of the first hole side (SSH1) and the length of the third sub-hole side (SSH21) of the second hole side (SSH2) may be less than approximately 10 μm. The difference between the length of the first sub-hole side (SSH11) of the first hole side (SSH1) and the length of the fifth sub-hole side (SSH31) of the third hole side (SSH3) may be less than approximately 10 μm. The difference between the length of the first sub-hole side (SSH11) of the first hole side (SSH1) and the length of the seventh sub-hole side (SSH41) of the fourth hole side (SSH4) may be less than approximately 10 μm. The difference between the length of the third sub-hole side (SSH21) of the second hole side (SSH2) and the length of the fifth sub-hole side (SSH31) of the third hole side (SSH3) may be less than approximately 10 μm. The difference between the length of the third sub-hole side (SSH21) of the second hole side (SSH2) and the length of the seventh sub-hole side (SSH41) of the fourth hole side (SSH4) may be less than approximately 10 μm. The difference between the length of the fifth sub-hole side (SSH31) of the third hole side (SSH3) and the length of the seventh sub-hole side (SSH41) of the fourth hole side (SSH4) may be less than approximately 10 μm.

[0496] The curvature radius of the upper portion (SSH12U) of the second sub-hole side (SSH12) of the first hole side (SSH1), the curvature radius of the upper portion (SSH22U) of the fourth sub-hole side (SSH2) of the second hole side (SSH2), the curvature radius of the upper portion (SSH32U) of the sixth sub-hole side (SSH32) of the third hole side (SSH3), and the curvature radius of the upper portion (SSH42U) of the eighth sub-hole side (SSH42) of the fourth hole side (SSH4) may be similar to each other. For example, the radius of curvature of the upper portion (SSH12U) of the second sub-hole side (SSH12) of the first hole side (SSH1), the radius of curvature of the upper portion (SSH22U) of the fourth sub-hole side (SSH2) of the second hole side (SSH2), the radius of curvature of the upper portion (SSH32U) of the sixth sub-hole side (SSH32) of the third hole side (SSH3), and the radius of curvature of the upper portion (SSH42U) of the eighth sub-hole side (SSH42) of the fourth hole side (SSH4) may be 150 μm to 350 μm.

[0497] The difference between the radius of curvature of the upper portion (SSH12U) of the second sub-hole side (SSH12) of the first hole side (SSH1) and the radius of curvature of the upper portion (SSH22U) of the fourth sub-hole side (SSH22) of the second hole side (SSH2) may be less than approximately 30 μm. The difference between the radius of curvature of the upper portion (SSH12U) of the second sub-hole side (SSH12) of the first hole side (SSH1) and the radius of curvature of the upper portion (SSH32U) of the sixth sub-hole side (SSH32) of the third hole side (SSH3) may be less than approximately 30 μm. The difference between the radius of curvature of the upper portion (SSH12U) of the second sub-hole side (SSH12) of the first hole side (SSH1) and the radius of curvature of the upper portion (SSH42U) of the eighth sub-hole side (SSH42) of the fourth hole side (SSH4) may be less than approximately 30 μm. The difference between the radius of curvature of the upper portion (SSH22U) of the fourth sub-hole side (SSH22) of the second hole side (SSH2) and the radius of curvature of the upper portion (SSH32U) of the sixth sub-hole side (SSH32) of the third hole side (SSH3) may be less than approximately 30 μm. The difference between the radius of curvature of the upper portion (SSH22U) of the fourth sub-hole side (SSH22) of the second hole side (SSH2) and the radius of curvature of the upper portion (SSH42U) of the eighth sub-hole side (SSH42) of the fourth hole side (SSH4) may be less than approximately 30 μm. The difference between the radius of curvature of the upper portion (SSH32U) of the sixth sub-hole side (SSH32) of the third hole side (SSH3) and the radius of curvature of the upper portion (SSH42U) of the eighth sub-hole side (SSH42) of the fourth hole side (SSH4) may be less than approximately 30 μm.

[0498] In addition, referring to FIGS. 26A to 26D and FIGS. 36A to 36D, the curvature radius of the upper portion (SSH12U) of the second sub-hole side (SSH12) of the first hole side (SSH1), the curvature radius of the upper portion (SSH22U) of the fourth sub-hole side (SSH2) of the second hole side (SSH2), the curvature radius of the upper portion (SSH32U) of the sixth sub-hole side (SSH32) of the third hole side (SSH3), and the curvature radius of the upper portion (SSH42U) of the eighth sub-hole side (SSH4) of the fourth hole side (SSH4) are each a radius of curvature of the upper portion (SS12U) of the second sub-side (SS12) of the first side (SS1), a radius of curvature of the upper portion (SS22U) of the fourth sub-side (SS22) of the second side (SS2), and a radius of curvature of the third The radius of curvature of the upper portion (SS32U) of the sixth sub-side (SS32) of the side (SS3) and the radius of curvature of the upper portion (SS42U) of the eighth sub-side (SS42) of the fourth side (SS4) may be similar. For example, the curvature radius of the upper portion (SSH12U) of the second sub-hole side (SSH12) of the first hole side (SSH1), the curvature radius of the upper portion (SSH22U) of the fourth sub-hole side (SSH2) of the second hole side (SSH2), the curvature radius of the upper portion (SSH32U) of the sixth sub-hole side (SSH32) of the third hole side (SSH3), and the curvature radius of the upper portion (SSH42U) of the eighth sub-hole side (SSH4) of the fourth hole side (SSH4), respectively, and the curvature radius of the upper portion (SS12U) of the second sub-side (SS12) of the first side (SS1), the curvature radius of the upper portion (SS22U) of the fourth sub-side (SS22) of the second side (SS2), the curvature radius of the upper portion (SS32U) of the sixth sub-side (SS32) of the third side (SS3), and The difference between any one of the radii of curvature of the upper portion (SS42U) of the eighth sub-side (SS42) of the fourth side (SS4) may be less than approximately 30 μm.

[0499] As shown in FIGS. 36a to 36d, the difference in the radius of curvature between the hole sides (SSH1, SSH2, SSH3, SSH4) of the substrate (SUB) of the display panel (100) may be minimal. As a result, the mechanical strength can be maintained uniformly depending on the positions of the hole sides (SSH1, SSH2, SSH3, SSH4) of the substrate (SUB) of the display panel (100).

[0500] Fig. 37 is a perspective view showing a display device according to another embodiment. Fig. 38 is a plan view showing a display panel and driving circuits according to another embodiment.

[0501] Referring to FIGS. 38 and 39, a display device (10) according to one embodiment may include a bending area (BA) and a pad area (PDA) arranged in a non-display area (NDA).

[0502] The bending area (BA) may be arranged between the display area (DA) and the pad area (PDA) in the second direction (Y-axis direction). The bending area (BA) may extend in the first direction (X-axis direction). The bending area (BA) refers to an area that is bent downwards of the display panel (100). When the bending area (BA) is bent downwards of the display panel (100), a plurality of driving ICs (200) and a circuit board (300) may be arranged downwards of the display panel (100).

[0503] The pad area (PDA) may be a lower edge area of ​​the display panel (100). The pad area (PDA) may be an area where display pads (PD) connected to a circuit board (300) and first and second driving pads (DPD1, DPD2) connected to a driving IC (200) are arranged.

[0504] Fig. 39 is a cross-sectional view showing an example of a display panel cut along line X9-X9' of Fig. 37. Fig. 40 is a cross-sectional view showing an example of a display device in which the bending area is bent in Fig. 39. Fig. 41 is a cross-sectional view showing an example of a display panel cut along line X10-X10' of Fig. 37. Fig. 42 is a cross-sectional view showing an example of a display panel cut along line X11-X11' of Fig. 37.

[0505] Referring to FIGS. 39 to 42, the display panel (100) may include a first substrate (SUB1) made of a hard material and a second substrate (SUB2) made of a polymer resin having a soft material.

[0506] The first substrate (SUB1) may be made of ultra-thin glass (UTG) having a thickness of approximately 500 μm or less, but the embodiments of the present specification are not limited thereto. The first substrate (SUB1) may include a first sub-substrate (SSUB1) disposed in the display area (DA) and a second sub-substrate (SSUB2) disposed in the pad area (PDA). The area of ​​the first sub-substrate (SSUB1) may be larger than the area of ​​the second sub-substrate (SSUB2).

[0507] The second substrate (SUB2) may be formed of a polymer resin having a lower thickness than the first substrate (SUB1). For example, the second substrate (SUB2) may be formed of an organic material such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, a polyimide resin, or the like. Since the second substrate (SUB2) is formed of a polymer resin, it may be referred to as a plastic substrate. Alternatively, since the second substrate (SUB2) is formed of an organic material, it may be referred to as an organic film.

[0508] The first substrate (SUB1) may not be placed in the bending area (BA). That is, the bending area (BA) includes only the second substrate (SUB2) made of a flexible material, so that it can be easily bent.

[0509] A thin film transistor layer (TFTL) can be arranged in a display area (DA), a bending area (BA), and a pad area (PDA).

[0510] A protective film (PRTL) may be disposed on the thin film transistor layer (TFTL) in the bending area (BA). The protective film (PRTL) may be a layer for protecting the exposed thin film transistor layer (TFTL) in the bending area (BA). The protective film (PRTL) may be formed of an organic material such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

[0511] The first sub-substrate (SSUB1) includes an upper surface (US), a lower surface (BS), and first to fourth side surfaces (SS1_1, SS2_1, SS3_1, SS4_1), and the second sub-substrate (SSUB2) includes an upper surface (US), a lower surface (BS), and first to fourth side surfaces (SS1_2, SS2_2, SS3_2, SS4_2).

[0512] The first side (SS1_1) of the first sub-substrate (SSUB1) refers to a side disposed at the first side edge (EG1_1) of the first sub-substrate (SSUB1), the second side (SS2_1) of the first sub-substrate (SSUB1) refers to a side disposed at the second side edge (EG2_1) of the first sub-substrate (SSUB1), the third side (SS3_1) of the first sub-substrate (SSUB1) refers to a side disposed at the third side edge (EG3_1) of the first sub-substrate (SSUB1), and the fourth side (SS4_1) of the first sub-substrate (SSUB1) refers to a side disposed at the fourth side edge (EG4_1) of the first sub-substrate (SSUB1).

[0513] The first side (SS1_2) of the second sub-substrate (SSUB2) refers to a side disposed at the first side edge (EG1_2) of the second sub-substrate (SSUB2), the second side (SS2_2) of the second sub-substrate (SSUB2) refers to a side disposed at the second side edge (EG2_2) of the second sub-substrate (SSUB2), the third side (SS3_2) of the second sub-substrate (SSUB2) refers to a side disposed at the third side edge (EG3_2) of the second sub-substrate (SSUB2), and the fourth side (SS4_2) of the second sub-substrate (SSUB2) refers to a side disposed at the fourth side edge (EG4_2) of the second sub-substrate (SSUB2).

[0514] Hereinafter, the first to fourth side surfaces (SS1_1, SS2_1, SS3_1, SS4_1) of the first sub-substrate (SSUB1) and the first to fourth side surfaces (SS1_2, SS2_2, SS3_2, SS4_2) of the second sub-substrate (SSUB2) will be described in detail with reference to FIGS. 43a to 43d, 44a to 44d, 45a to 45d, and 46a to 46d.

[0515] Figures 43a to 43d are enlarged cross-sectional views showing examples of first to fourth side surfaces of the first sub-substrate in Figures 39 and 41. Figure 43a shows cross-sections of the first side surface (SS1_1) of the first sub-substrate (SSUB1), Figure 43b shows cross-sections of the second side surface (SS2_1) of the first sub-substrate (SSUB1), Figure 43c shows cross-sections of the third side surface (SS3_1) of the first sub-substrate (SSUB1), and Figure 43d shows cross-sections of the fourth side surface (SS4_1) of the first sub-substrate (SSUB1).

[0516] Referring to FIG. 43A, the first side surface (SS1_1) of the first sub-substrate (SSUB1) may have a curved shape with a varying radius of curvature. The curved shape of the upper surface (SS1_1U) and the curved shape of the lower surface (SS1_1B) of the first side surface (SS1_1) of the first sub-substrate (SSUB1) may be different. The upper surface (SS1_1U) of the first side surface (SS1_1) of the first sub-substrate (SSUB1) refers to an area positioned upper than the center (SS1_1C) of the first side surface (SS1_1) of the first sub-substrate (SSUB1). The lower surface (SS1_1B) of the first side surface (SS1_1) of the first sub-substrate (SSUB1) refers to an area positioned lower than the center (SS1_1C) of the first side surface (SS1_1) of the first sub-substrate (SSUB1).

[0517] The radius of curvature of the upper portion (SS1_1U) of the first side (SS1_1) of the first sub-substrate (SSUB1) and the radius of curvature of the lower portion (SS1_1B) of the first side (SS1_1) of the first sub-substrate (SSUB1) may be different. For example, the radius of curvature of the lower portion (SS1_1B) of the first side (SS1_1) of the first sub-substrate (SSUB1) may be smaller than the radius of curvature of the upper portion (SS1_1U) of the first side (SS1_1) of the first sub-substrate (SSUB1).

[0518] The radius of curvature of the upper portion (SS1_1U) of the first side (SS1_1) of the first sub-substrate (SSUB1) may be defined as the radius of curvature of a curve passing through the center (SS1_1C) of the first side (SS1_1) of the first sub-substrate (SSUB1), the upper end (SS1_1UE) of the first side (SS1_1) of the first sub-substrate (SSUB1), and the upper center (SS1_1UC) of the first side (SS1_1) of the first sub-substrate (SSUB1). The radius of curvature of the lower portion (SS1_1B) of the first side (SS1_1) of the first sub-substrate (SSUB1) may be defined as the radius of curvature of a curve passing through the center (SS1_1C) of the first side (SS1_1) of the first sub-substrate (SSUB1), the lower end (SS1_1BE) of the first side (SS1_1) of the first sub-substrate (SSUB1), and the lower center (SS1_1BC) of the first side (SS1_1) of the first sub-substrate (SSUB1).

[0519] Additionally, the radius of curvature of the central region of the first side (SS1_1) of the first sub-substrate (SSUB1) may be different from the radius of curvature of the upper portion (SS1_1U) of the first side (SS1_1) of the first sub-substrate (SSUB1) and the radius of curvature of the lower portion (SS1_1B) of the first side (SS1_1) of the first sub-substrate (SSUB1). The radius of curvature of the central region of the first side (SS1_1) of the first sub-substrate (SSUB1) may be defined as the radius of curvature of a curve passing through the center (SS1_1C), the upper center (SS1_1UC), and the lower center (SS1_1BC) of the first side (SS1_1) of the first sub-substrate (SSUB1).

[0520] Additionally, the difference between the radius of curvature of the upper central area (SS1_1UA) of the first side (SS1_1) of the first sub-substrate (SSUB1) and the radius of curvature of the lower central area (SS1_1BA) of the first side (SS1_1) of the first sub-substrate (SSUB1) may be smaller than the difference between the radius of curvature of the upper area (SS1_1U) of the first side (SS1_1) of the first sub-substrate (SSUB1) and the radius of curvature of the lower area (SS1_1B) of the first side (SS1_1) of the first sub-substrate (SSUB1). The radius of curvature of the upper central area (SS1_1UA) of the first side (SS1_1) of the first sub-substrate (SSUB1) and the radius of curvature of the lower central area (SS1_1BA) of the first side (SS1_1) of the first sub-substrate (SSUB1) may be substantially the same. Alternatively, the difference between the radius of curvature of the upper central area (SS1_1UA) of the first side (SS1_1) of the first sub-substrate (SSUB1) and the radius of curvature of the lower central area (SS1_1BA) of the first side (SS1_1) of the first sub-substrate (SSUB1) may be 30 μm or less.

[0521] The radius of curvature of the upper central area (SS1_1UA) of the first side (SS1_1) of the first sub-substrate (SSUB1) may be defined as the radius of curvature of a curve passing through the center (SS1_1C), the upper center (SS1_1UC), and the first point (PP1_11) of the first side (SS1_1) of the first sub-substrate (SSUB1). The radius of curvature of the lower central area (SS1_1BA) of the first side (SS1_1) of the first sub-substrate (SSUB1) may be defined as the radius of curvature of a curve passing through the center (SS1_1C), the lower center (SS1_1BC), and the second point (PP2_11) of the first side (SS1_1) of the first sub-substrate (SSUB1). A first point (PP1_11) of a first side (SS1_1) of a first sub-substrate (SSUB1) may be defined as a midpoint between a center (SS1_1C) of the first side (SS1_1) of the first sub-substrate (SSUB1) and an upper center (SS1_1UC). A second point (PP2_11) of a first side (SS1_1) of the first sub-substrate (SSUB1) may be defined as a midpoint between a center (SS1_1C) of the first side (SS1_1) of the first sub-substrate (SSUB1) and a lower center (SS1_1BC).

[0522] Referring to FIG. 43B, the second side surface (SS2_1) of the first sub-substrate (SSUB1) may have a curved shape with a varying radius of curvature. The curved shape of the upper portion (SS2_1U) and the curved shape of the lower portion (SS2_1B) of the second side surface (SS2_1) of the first sub-substrate (SSUB1) may be different. The upper portion (SS2_1U) of the second side surface (SS2_1) of the first sub-substrate (SSUB1) refers to an area positioned upper than the center (SS2_1C) of the second side surface (SS2_1) of the first sub-substrate (SSUB1). The lower portion (SS2_1B) of the second side surface (SS2_1) of the first sub-substrate (SSUB1) refers to an area positioned lower than the center (SS2_1C) of the second side surface (SS2_1) of the first sub-substrate (SSUB1).

[0523] The radius of curvature of the upper portion (SS2_1U) of the second side (SS2_1) of the first sub-substrate (SSUB1) and the radius of curvature of the lower portion (SS2_1B) of the second side (SS2_1) of the first sub-substrate (SSUB1) may be different. For example, the radius of curvature of the lower portion (SS2_1B) of the second side (SS2_1) of the first sub-substrate (SSUB1) may be smaller than the radius of curvature of the upper portion (SS2_1U) of the second side (SS2_1) of the first sub-substrate (SSUB1).

[0524] The radius of curvature of the upper portion (SS2_1U) of the second side (SS2_1) of the first sub-substrate (SSUB1) may be defined as the radius of curvature of a curve passing through the center (SS2_1C) of the second side (SS2_1) of the first sub-substrate (SSUB1), the upper end (SS2_1UE) of the second side (SS2_1) of the first sub-substrate (SSUB1), and the upper center (SS2_1UC) of the second side (SS2_1) of the first sub-substrate (SSUB1). The radius of curvature of the lower portion (SS2_1B) of the second side (SS2_1) of the first sub-substrate (SSUB1) may be defined as the radius of curvature of a curve passing through the center (SS2_1C) of the second side (SS2_1) of the first sub-substrate (SSUB1), the lower end (SS2_1BE) of the second side (SS2_1) of the first sub-substrate (SSUB1), and the lower center (SS2_1BC) of the second side (SS2_1) of the first sub-substrate (SSUB1).

[0525] Additionally, the radius of curvature of the central region of the second side (SS2_1) of the first sub-substrate (SSUB1) may be different from the radius of curvature of the upper portion (SS2_1U) of the second side (SS2_1) of the first sub-substrate (SSUB1) and the radius of curvature of the lower portion (SS2_1B) of the second side (SS2_1) of the first sub-substrate (SSUB1). The radius of curvature of the central region of the second side (SS2_1) of the first sub-substrate (SSUB1) may be defined as the radius of curvature of a curve passing through the center (SS2_1C), the upper center (SS2_1UC), and the lower center (SS2_1BC) of the second side (SS2_1) of the first sub-substrate (SSUB1).

[0526] Additionally, the difference between the radius of curvature of the upper central area (SS2_1UA) of the second side (SS2_1) of the first sub-substrate (SSUB1) and the radius of curvature of the lower central area (SS2_1BA) of the second side (SS2_1) of the first sub-substrate (SSUB1) may be smaller than the difference between the radius of curvature of the upper area (SS2_1U) of the second side (SS2_1) of the first sub-substrate (SSUB1) and the radius of curvature of the lower area (SS2_1B) of the second side (SS2_1) of the first sub-substrate (SSUB1). The radius of curvature of the upper central area (SS2_1UA) of the second side (SS2_1) of the first sub-substrate (SSUB1) and the radius of curvature of the lower central area (SS2_1BA) of the second side (SS2_1) of the first sub-substrate (SSUB1) may be substantially the same. Alternatively, the difference between the radius of curvature of the upper central area (SS2_1UA) of the second side (SS2_1) of the first sub-substrate (SSUB1) and the radius of curvature of the lower central area (SS2_1BA) of the second side (SS2_1) of the first sub-substrate (SSUB1) may be 30 μm or less.

[0527] The radius of curvature of the upper center (SS2_1UA) of the second side (SS2_1) of the first sub-substrate (SSUB1) may be defined as the radius of curvature of a curve passing through the center (SS2_1C), the upper center (SS2_1UC), and the first point (PP1_21) of the second side (SS2_1) of the first sub-substrate (SSUB1). The radius of curvature of the lower center (SS2_1BA) of the second side (SS2_1) of the first sub-substrate (SSUB1) may be defined as the radius of curvature of a curve passing through the center (SS2_1C), the lower center (SS2_1BC), and the second point (PP2_21) of the second side (SS2_1) of the first sub-substrate (SSUB1). The first point (PP1_21) of the second side (SS2_1) of the first sub-substrate (SSUB1) may be defined as a midpoint between the center (SS2_1C) and the upper center (SS2_1UC) of the second side (SS2_1) of the first sub-substrate (SSUB1). The second point (PP2_21) of the second side (SS2_1) of the first sub-substrate (SSUB1) may be defined as a midpoint between the center (SS2_1C) and the lower center (SS2_1BC) of the second side (SS2_1) of the first sub-substrate (SSUB1).

[0528] Referring to FIG. 43C, the third side surface (SS3_1) of the first sub-substrate (SSUB1) may have a curved shape with a varying radius of curvature. The curved shape of the upper portion (SS3_1U) and the curved shape of the lower portion (SS3_1B) of the third side surface (SS3_1) of the first sub-substrate (SSUB1) may be different. The upper portion (SS3_1U) of the third side surface (SS3_1) of the first sub-substrate (SSUB1) refers to an area positioned upper than the center (SS3_1C) of the third side surface (SS3_1) of the first sub-substrate (SSUB1). The lower portion (SS3_1B) of the third side surface (SS3_1) of the first sub-substrate (SSUB1) refers to an area positioned lower than the center (SS3_1C) of the third side surface (SS3_1) of the first sub-substrate (SSUB1).

[0529] The radius of curvature of the upper portion (SS3_1U) of the third side (SS3_1) of the first sub-substrate (SSUB1) and the radius of curvature of the lower portion (SS3_1B) of the third side (SS3_1) of the first sub-substrate (SSUB1) may be different. For example, the radius of curvature of the lower portion (SS3_1B) of the third side (SS3_1) of the first sub-substrate (SSUB1) may be smaller than the radius of curvature of the upper portion (SS3_1U) of the third side (SS3_1) of the first sub-substrate (SSUB1).

[0530] The radius of curvature of the upper portion (SS3_1U) of the third side (SS3_1) of the first sub-substrate (SSUB1) may be defined as the radius of curvature of a curve passing through the center (SS3_1C) of the third side (SS3_1) of the first sub-substrate (SSUB1), the upper end (SS3_1UE) of the third side (SS3_1) of the first sub-substrate (SSUB1), and the upper center (SS3_1UC) of the third side (SS3_1) of the first sub-substrate (SSUB1). The radius of curvature of the lower portion (SS3_1B) of the third side (SS3_1) of the first sub-substrate (SSUB1) may be defined as the radius of curvature of a curve passing through the center (SS3_1C) of the third side (SS3_1) of the first sub-substrate (SSUB1), the lower end (SS3_1BE) of the third side (SS3_1) of the first sub-substrate (SSUB1), and the lower center (SS3_1BC) of the third side (SS3_1) of the first sub-substrate (SSUB1).

[0531] Additionally, the radius of curvature of the central region of the third side (SS3_1) of the first sub-substrate (SSUB1) may be different from the radius of curvature of the upper portion (SS3_1U) of the third side (SS3_1) of the first sub-substrate (SSUB1) and the radius of curvature of the lower portion (SS3_1B) of the third side (SS3_1) of the first sub-substrate (SSUB1). The radius of curvature of the central region of the third side (SS3_1) of the first sub-substrate (SSUB1) may be defined as the radius of curvature of a curve passing through the center (SS3_1C), the upper center (SS3_1UC), and the lower center (SS3_1BC) of the third side (SS3_1) of the first sub-substrate (SSUB1).

[0532] Additionally, the difference between the radius of curvature of the upper central area (SS3_1UA) of the third side (SS3_1) of the first sub-substrate (SSUB1) and the radius of curvature of the lower central area (SS3_1BA) of the third side (SS3_1) of the first sub-substrate (SSUB1) may be smaller than the difference between the radius of curvature of the upper area (SS3_1U) of the third side (SS3_1) of the first sub-substrate (SSUB1) and the radius of curvature of the lower area (SS3_1B) of the third side (SS3_1) of the first sub-substrate (SSUB1). The radius of curvature of the upper central area (SS3_1UA) of the third side (SS3_1) of the first sub-substrate (SSUB1) and the radius of curvature of the lower central area (SS3_1BA) of the third side (SS3_1) of the first sub-substrate (SSUB1) may be substantially the same. Alternatively, the difference between the radius of curvature of the upper central area (SS3_1UA) of the third side (SS3_1) of the first sub-substrate (SSUB1) and the radius of curvature of the lower central area (SS3_1BA) of the third side (SS3_1) of the first sub-substrate (SSUB1) may be 30 μm or less.

[0533] The radius of curvature of the upper central area (SS3_1UA) of the third side (SS3_1) of the first sub-substrate (SSUB1) may be defined as the radius of curvature of a curve passing through the center (SS3_1C), the upper center (SS3_1UC), and the first point (PP1_31) of the third side (SS3_1) of the first sub-substrate (SSUB1). The radius of curvature of the lower central area (SS3_1BA) of the third side (SS3_1) of the first sub-substrate (SSUB1) may be defined as the radius of curvature of a curve passing through the center (SS3_1C), the lower center (SS3_1BC), and the second point (PP2_31) of the third side (SS3_1) of the first sub-substrate (SSUB1). A first point (PP1_31) of the third side (SS3_1) of the first sub-substrate (SSUB1) may be defined as a midpoint between the center (SS3_1C) and the upper center (SS3_1UC) of the third side (SS3_1) of the first sub-substrate (SSUB1). A second point (PP2_31) of the third side (SS3_1) of the first sub-substrate (SSUB1) may be defined as a midpoint between the center (SS3_1C) and the lower center (SS3_1BC) of the third side (SS3_1) of the first sub-substrate (SSUB1).

[0534] Referring to FIG. 43d, the fourth side surface (SS4_1) of the first sub-substrate (SSUB1) may have a curved shape with a varying radius of curvature. The curved shape of the upper portion (SS4_1U) and the curved shape of the lower portion (SS4_1B) of the fourth side surface (SS4_1) of the first sub-substrate (SSUB1) may be different. The upper portion (SS4_1U) of the fourth side surface (SS4_1) of the first sub-substrate (SSUB1) refers to an area positioned upper than the center (SS4_1C) of the fourth side surface (SS4_1) of the first sub-substrate (SSUB1). The lower portion (SS4_1B) of the fourth side surface (SS4_1) of the first sub-substrate (SSUB1) refers to an area positioned lower than the center (SS4_1C) of the fourth side surface (SS4_1) of the first sub-substrate (SSUB1).

[0535] The radius of curvature of the upper portion (SS4_1U) of the fourth side (SS4_1) of the first sub-substrate (SSUB1) and the radius of curvature of the lower portion (SS4_1B) of the fourth side (SS4_1) of the first sub-substrate (SSUB1) may be different. For example, the radius of curvature of the lower portion (SS4_1B) of the fourth side (SS4_1) of the first sub-substrate (SSUB1) may be smaller than the radius of curvature of the upper portion (SS4_1U) of the fourth side (SS4_1) of the first sub-substrate (SSUB1).

[0536] The radius of curvature of the upper portion (SS4_1U) of the fourth side (SS4_1) of the first sub-substrate (SSUB1) may be defined as the radius of curvature of a curve passing through the center (SS4_1C) of the fourth side (SS4_1) of the first sub-substrate (SSUB1), the upper end (SS4_1UE) of the fourth side (SS4_1) of the first sub-substrate (SSUB1), and the upper center (SS4_1UC) of the fourth side (SS4_1) of the first sub-substrate (SSUB1). The radius of curvature of the lower portion (SS4_1B) of the fourth side (SS4_1) of the first sub-substrate (SSUB1) may be defined as the radius of curvature of a curve passing through the center (SS4_1C) of the fourth side (SS4_1) of the first sub-substrate (SSUB1), the lower end (SS4_1BE) of the fourth side (SS4_1) of the first sub-substrate (SSUB1), and the lower center (SS4_1BC) of the fourth side (SS4_1) of the first sub-substrate (SSUB1).

[0537] Additionally, the radius of curvature of the central region of the fourth side surface (SS4_1) of the first sub-substrate (SSUB1) may be different from the radius of curvature of the upper portion (SS4_1U) of the fourth side surface (SS4_1) of the first sub-substrate (SSUB1) and the radius of curvature of the lower portion (SS4_1B) of the fourth side surface (SS4_1) of the first sub-substrate (SSUB1). The radius of curvature of the central region of the fourth side surface (SS4_1) of the first sub-substrate (SSUB1) may be defined as the radius of curvature of a curve passing through the center (SS4_1C), the upper center (SS4_1UC), and the lower center (SS4_1BC) of the fourth side surface (SS4_1) of the first sub-substrate (SSUB1).

[0538] Additionally, the difference between the radius of curvature of the upper central area (SS4_1UA) of the fourth side (SS4_1) of the first sub-substrate (SSUB1) and the radius of curvature of the lower central area (SS4_1BA) of the fourth side (SS4_1) of the first sub-substrate (SSUB1) may be smaller than the difference between the radius of curvature of the upper area (SS4_1U) of the fourth side (SS4_1) of the first sub-substrate (SSUB1) and the radius of curvature of the lower area (SS4_1B) of the fourth side (SS4_1) of the first sub-substrate (SSUB1). The radius of curvature of the upper central area (SS4_1UA) of the fourth side (SS4_1) of the first sub-substrate (SSUB1) and the radius of curvature of the lower central area (SS4_1BA) of the fourth side (SS4_1) of the first sub-substrate (SSUB1) may be substantially the same. Alternatively, the difference between the radius of curvature of the upper central area (SS4_1UA) of the fourth side (SS4_1) of the first sub-substrate (SSUB1) and the radius of curvature of the lower central area (SS4_1BA) of the fourth side (SS4_1) of the first sub-substrate (SSUB1) may be 30 μm or less.

[0539] The radius of curvature of the upper central area (SS4_1UA) of the fourth side (SS4_1) of the first sub-substrate (SSUB1) may be defined as the radius of curvature of a curve passing through the center (SS4_1C), the upper center (SS4_1UC), and the first point (PP1_41) of the fourth side (SS4_1) of the first sub-substrate (SSUB1). The radius of curvature of the lower central area (SS4_1BA) of the fourth side (SS4_1) of the first sub-substrate (SSUB1) may be defined as the radius of curvature of a curve passing through the center (SS4_1C), the lower center (SS4_1BC), and the second point (PP2_41) of the fourth side (SS4_1) of the first sub-substrate (SSUB1). A first point (PP1_41) of the fourth side (SS4_1) of the first sub-substrate (SSUB1) may be defined as a midpoint between the center (SS4_1C) and the upper center (SS4_1UC) of the fourth side (SS4_1) of the first sub-substrate (SSUB1). A second point (PP2_41) of the fourth side (SS4_1) of the first sub-substrate (SSUB1) may be defined as a midpoint between the center (SS4_1C) and the lower center (SS4_1BC) of the fourth side (SS4_1) of the first sub-substrate (SSUB1).

[0540] Referring to FIGS. 43a to 43d, the radius of curvature of the upper portion (SS1_1U) of the first side (SS1_1) of the first sub-substrate (SSUB1), the radius of curvature of the upper portion (SS2_1U) of the second side (SS2_1), the radius of curvature of the upper portion (SS3_1U) of the third side (SS3_1), and the radius of curvature of the upper portion (SS4_1U) of the fourth side (SS4_1) may be similar to each other. For example, the radius of curvature of the upper portion (SS1_1U) of the first side (SS1_1) of the first sub-substrate (SSUB1), the radius of curvature of the upper portion (SS2_1U) of the second side (SS2_1), the radius of curvature of the upper portion (SS3_1U) of the third side (SS3_1), and the radius of curvature of the upper portion (SS4_1U) of the fourth side (SS4_1) may be 150 μm to 350 μm.

[0541] The difference between the radius of curvature of the upper portion (SS1_1U) of the first side (SS1_1) of the first sub-substrate (SSUB1) and the radius of curvature of the upper portion (SS2_1U) of the second side (SS2_1) may be less than approximately 30 μm. The difference between the radius of curvature of the upper portion (SS1_1U) of the first side (SS1_1) of the first sub-substrate (SSUB1) and the radius of curvature of the upper portion (SS3_1U) of the third side (SS3_1) may be less than approximately 30 μm. The difference between the radius of curvature of the upper portion (SS1_1U) of the first side (SS1_1) of the first sub-substrate (SSUB1) and the radius of curvature of the upper portion (SS4_1U) of the fourth side (SS4_1) may be less than approximately 30 μm. The difference between the radius of curvature of the upper portion (SS2_1U) of the second side (SS2_1) of the first sub-substrate (SSUB1) and the radius of curvature of the upper portion (SS3_1U) of the third side (SS3_1) may be less than approximately 30 μm. The difference between the radius of curvature of the upper portion (SS2_1U) of the second side (SS2_1) of the first sub-substrate (SSUB1) and the radius of curvature of the upper portion (SS4_1U) of the fourth side (SS4_1) may be less than approximately 30 μm. The difference between the radius of curvature of the upper portion (SS3_1U) of the third side (SS3_1) of the first sub-substrate (SSUB1) and the radius of curvature of the upper portion (SS4_1U) of the fourth side (SS4_1) may be less than approximately 30 μm.

[0542] In addition, referring to FIGS. 25A to 25D and FIGS. 43A to 43D, the curvature radius of the upper portion (SS1_1U) of the first side (SS1_1) of the first sub-substrate (SSUB1), the curvature radius of the upper portion (SS2_1U) of the second side (SS2_1), the curvature radius of the upper portion (SS3_1U) of the third side (SS3_1), and the curvature radius of the upper portion (SS4_1U) of the fourth side (SS4_1) may be similar to the curvature radius of the upper portion (SS1U) of the first side (SS1), the curvature radius of the upper portion (SS2U) of the second side (SS2), the curvature radius of the upper portion (SS3U) of the third side (SS3), and the curvature radius of the upper portion (SS4U) of the fourth side (SS4). For example, the difference between the curvature radii of the upper portion (SS1_1U) of the first side (SS1_1), the curvature radii of the upper portion (SS2_1U) of the second side (SS2_1), the curvature radii of the upper portion (SS3_1U) of the third side (SS3_1), and the curvature radii of the upper portion (SS4_1U) of the fourth side (SS4_1) of the first sub-substrate (SSUB1) and any one of the curvature radii of the upper portion (SS1U) of the first side (SS1), the curvature radii of the upper portion (SS2U) of the second side (SS2), the curvature radii of the upper portion (SS3U) of the third side (SS3), and the curvature radii of the upper portion (SS4U) of the fourth side (SS4) may be less than approximately 30 μm.

[0543] In addition, referring to FIGS. 35a to 35d and FIGS. 43a to 43d, the curvature radius of the upper portion (SS1_1U) of the first side (SS1_1) of the first sub-substrate (SSUB1), the curvature radius of the upper portion (SS2_1U) of the second side (SS2_1), the curvature radius of the upper portion (SS3_1U) of the third side (SS3_1), and the curvature radius of the upper portion (SS4_1U) of the fourth side (SS4_1) may be similar to the curvature radius of the upper portion (SSH1U) of the first hole side (SSH1), the curvature radius of the upper portion (SSH2U) of the second hole side (SSH2), the curvature radius of the upper portion (SSH3U) of the third hole side (SSH3), and the curvature radius of the upper portion (SSH4U) of the fourth hole side (SSH4). For example, the difference between any one of the curvature radii of the upper portion (SS1_1U) of the first side (SS1_1), the curvature radii of the upper portion (SS2_1U) of the second side (SS2_1), the curvature radii of the upper portion (SS3_1U) of the third side (SS3_1), and the curvature radii of the upper portion (SS4_1U) of the fourth side (SS4_1) of the first sub-substrate (SSUB1) and the curvature radii of the upper portion (SSH1U) of the first hole side (SSH1), the curvature radii of the upper portion (SSH2U) of the second hole side (SSH2), the curvature radii of the upper portion (SSH3U) of the third hole side (SSH3), and the curvature radii of the upper portion (SSH4U) of the fourth hole side (SSH4) may be less than approximately 30 μm.

[0544] As shown in FIGS. 43a to 43d, the difference in the radius of curvature between the side surfaces (SS1_1, SS2_1, SS3_1, SS4_1) of the first sub-substrate (SSUB1) of the display panel (100) may be minimal. As a result, the mechanical strength can be maintained uniformly depending on the positions of the side surfaces (SS1_1, SS2_1, SS3_1, SS4_1) of the first sub-substrate (SSUB1) of the display panel (100).

[0545] Figures 44a to 44d are enlarged cross-sectional views showing examples of first to fourth side surfaces of the second sub-substrate in Figures 39 and 42. Figure 44a shows cross-sections of the first side surface (SS1_2) of the second sub-substrate (SSUB2), Figure 44b shows cross-sections of the second side surface (SS2_2) of the second sub-substrate (SSUB2), Figure 44c shows cross-sections of the third side surface (SS3_2) of the second sub-substrate (SSUB2), and Figure 44d shows cross-sections of the fourth side surface (SS4_2) of the second sub-substrate (SSUB2).

[0546] Referring to FIG. 44a, the first side surface (SS1_2) of the second sub-substrate (SSUB2) may have a curved shape with a varying radius of curvature. The curved shape of the upper surface (SS1_2U) and the curved shape of the lower surface (SS1_2B) of the first side surface (SS1_2) of the second sub-substrate (SSUB2) may be different. The upper surface (SS1_2U) of the first side surface (SS1_2) of the second sub-substrate (SSUB2) refers to an area positioned upper than the center (SS1_2C) of the first side surface (SS1_2) of the second sub-substrate (SSUB2). The lower surface (SS1_2B) of the first side surface (SS1_2) of the second sub-substrate (SSUB2) refers to an area positioned lower than the center (SS1_2C) of the first side surface (SS1_2) of the second sub-substrate (SSUB2).

[0547] The radius of curvature of the upper portion (SS1_2U) of the first side (SS1_2) of the second sub-substrate (SSUB2) and the radius of curvature of the lower portion (SS1_2B) of the first side (SS1_2) of the second sub-substrate (SSUB2) may be different. For example, the radius of curvature of the lower portion (SS1_2B) of the first side (SS1_2) of the second sub-substrate (SSUB2) may be smaller than the radius of curvature of the upper portion (SS1_2U) of the first side (SS1_2) of the second sub-substrate (SSUB2).

[0548] The radius of curvature of the upper portion (SS1_2U) of the first side (SS1_2) of the second sub-substrate (SSUB2) may be defined as the radius of curvature of a curve passing through the center (SS1_2C) of the first side (SS1_2) of the second sub-substrate (SSUB2), the upper end (SS1_2UE) of the first side (SS1_2) of the second sub-substrate (SSUB2), and the upper center (SS1_2UC) of the first side (SS1_2) of the first sub-substrate (SSUB2). The radius of curvature of the lower portion (SS1_2B) of the first side (SS1_2) of the second sub-substrate (SSUB2) may be defined as the radius of curvature of a curve passing through the center (SS1_2C) of the first side (SS1_2) of the second sub-substrate (SSUB2), the lower end (SS1_2BE) of the first side (SS1_2) of the second sub-substrate (SSUB2), and the lower center (SS1_2BC) of the first side (SS1_2) of the second sub-substrate (SSUB2).

[0549] Additionally, the radius of curvature of the central region of the first side (SS1_2) of the second sub-substrate (SSUB2) may be different from the radius of curvature of the upper portion (SS1_2U) of the first side (SS1_2) of the second sub-substrate (SSUB2) and the radius of curvature of the lower portion (SS1_2B) of the first side (SS1_2) of the second sub-substrate (SSUB2). The radius of curvature of the central region of the first side (SS1_2) of the second sub-substrate (SSUB2) may be defined as the radius of curvature of a curve passing through the center (SS1_2C), the upper center (SS1_2UC), and the lower center (SS1_2BC) of the first side (SS1_2) of the second sub-substrate (SSUB2).

[0550] Additionally, the difference between the radius of curvature of the upper central area (SS1_2UA) of the first side (SS1_2) of the second sub-substrate (SSUB2) and the radius of curvature of the lower central area (SS1_2BA) of the first side (SS1_2) of the second sub-substrate (SSUB2) may be smaller than the difference between the radius of curvature of the upper area (SS1_2U) of the first side (SS1_2) of the second sub-substrate (SSUB2) and the radius of curvature of the lower area (SS1_2B) of the first side (SS1_2) of the second sub-substrate (SSUB2). The radius of curvature of the upper central area (SS1_2UA) of the first side (SS1_2) of the second sub-substrate (SSUB2) and the radius of curvature of the lower central area (SS1_2BA) of the first side (SS1_2) of the second sub-substrate (SSUB2) may be substantially the same. Alternatively, the difference between the radius of curvature of the upper central area (SS1_2UA) of the first side (SS1_2) of the second sub-substrate (SSUB2) and the radius of curvature of the lower central area (SS1_2BA) of the first side (SS1_2) of the second sub-substrate (SSUB2) may be 30 μm or less.

[0551] The radius of curvature of the upper central area (SS1_2UA) of the first side (SS1_2) of the second sub-substrate (SSUB2) may be defined as the radius of curvature of a curve passing through the center (SS1_2C), the upper center (SS1_2UC), and the first point (PP1_12) of the first side (SS1_2) of the second sub-substrate (SSUB2). The radius of curvature of the lower central area (SS1_2BA) of the first side (SS1_2) of the second sub-substrate (SSUB2) may be defined as the radius of curvature of a curve passing through the center (SS1_2C), the lower center (SS1_2BC), and the second point (PP2_12) of the first side (SS1_2) of the second sub-substrate (SSUB2). The first point (PP1_12) of the first side (SS1_2) of the second sub-substrate (SSUB2) may be defined as a midpoint between the center (SS1_2C) and the upper center (SS1_2UC) of the first side (SS1_2) of the first sub-substrate (SSUB2). The second point (PP2_12) of the first side (SS1_2) of the second sub-substrate (SSUB2) may be defined as a midpoint between the center (SS1_2C) and the lower center (SS1_2BC) of the first side (SS1_2) of the second sub-substrate (SSUB2).

[0552] Referring to FIG. 44b, the second side surface (SS2_2) of the second sub-substrate (SSUB2) may have a curved shape with a varying radius of curvature. The curved shape of the upper portion (SS2_2U) and the curved shape of the lower portion (SS2_2B) of the second side surface (SS2_2) of the second sub-substrate (SSUB2) may be different. The upper portion (SS2_2U) of the second side surface (SS2_2) of the second sub-substrate (SSUB2) refers to an area positioned above the center (SS2_2C) of the second side surface (SS2_2) of the second sub-substrate (SSUB2). The lower portion (SS2_2B) of the second side surface (SS2_2) of the second sub-substrate (SSUB2) refers to an area positioned below the center (SS2_2C) of the second side surface (SS2_2) of the second sub-substrate (SSUB2).

[0553] The radius of curvature of the upper portion (SS2_2U) of the second side (SS2_2) of the second sub-substrate (SSUB2) and the radius of curvature of the lower portion (SS2_2B) of the second side (SS2_2) of the second sub-substrate (SSUB2) may be different. For example, the radius of curvature of the lower portion (SS2_2B) of the second side (SS2_2) of the second sub-substrate (SSUB2) may be smaller than the radius of curvature of the upper portion (SS2_2U) of the second side (SS2_2) of the second sub-substrate (SSUB2).

[0554] The radius of curvature of the upper portion (SS2_2U) of the second side (SS2_2) of the second sub-substrate (SSUB2) may be defined as the radius of curvature of a curve passing through the center (SS2_2C) of the second side (SS2_2) of the second sub-substrate (SSUB2), the upper end (SS2_2UE) of the second side (SS2_2) of the second sub-substrate (SSUB2), and the upper center (SS2_2UC) of the second side (SS2_2) of the second sub-substrate (SSUB2). The radius of curvature of the lower portion (SS2_2B) of the second side (SS2_2) of the second sub-substrate (SSUB2) may be defined as the radius of curvature of a curve passing through the center (SS2_2C) of the second side (SS2_2) of the second sub-substrate (SSUB2), the lower end (SS2_2BE) of the second side (SS2_2) of the second sub-substrate (SSUB2), and the lower center (SS2_2BC) of the second side (SS2_2) of the second sub-substrate (SSUB2).

[0555] Additionally, the radius of curvature of the central region of the second side surface (SS2_2) of the second sub-substrate (SSUB2) may be different from the radius of curvature of the upper portion (SS2_2U) of the second side surface (SS2_2) of the second sub-substrate (SSUB2) and the radius of curvature of the lower portion (SS2_2B) of the second side surface (SS2_2) of the second sub-substrate (SSUB2). The radius of curvature of the central region of the second side surface (SS2_2) of the second sub-substrate (SSUB2) may be defined as the radius of curvature of a curve passing through the center (SS2_2C), the upper center (SS2_2UC), and the lower center (SS2_2BC) of the second side surface (SS2_2) of the second sub-substrate (SSUB2).

[0556] Additionally, the difference between the radius of curvature of the upper central area (SS2_2UA) of the second side (SS2_2) of the second sub-substrate (SSUB2) and the radius of curvature of the lower central area (SS2_2BA) of the second side (SS2_2) of the second sub-substrate (SSUB2) may be smaller than the difference between the radius of curvature of the upper area (SS2_2U) of the second side (SS2_2) of the second sub-substrate (SSUB2) and the radius of curvature of the lower area (SS2_2B) of the second side (SS2_2) of the second sub-substrate (SSUB2). The radius of curvature of the upper central area (SS2_2UA) of the second side (SS2_2) of the second sub-substrate (SSUB2) and the radius of curvature of the lower central area (SS2_2BA) of the second side (SS2_2) of the second sub-substrate (SSUB2) may be substantially the same. Alternatively, the difference between the radius of curvature of the upper central area (SS2_2UA) of the second side (SS2_2) of the second sub-substrate (SSUB2) and the radius of curvature of the lower central area (SS2_2BA) of the second side (SS2_2) of the second sub-substrate (SSUB2) may be 30 μm or less.

[0557] The radius of curvature of the upper central area (SS2_2UA) of the second side (SS2_2) of the second sub-substrate (SSUB2) may be defined as the radius of curvature of a curve passing through the center (SS2_2C), the upper center (SS2_2UC), and the first point (PP1_22) of the second side (SS2_2) of the second sub-substrate (SSUB2). The radius of curvature of the lower central area (SS2_2BA) of the second side (SS2_2) of the second sub-substrate (SSUB2) may be defined as the radius of curvature of a curve passing through the center (SS2_2C), the lower center (SS2_2BC), and the second point (PP2_22) of the second side (SS2_2) of the second sub-substrate (SSUB2). The first point (PP1_22) of the second side (SS2_2) of the second sub-substrate (SSUB2) may be defined as a midpoint between the center (SS2_2C) and the upper center (SS2_2UC) of the second side (SS2_2) of the second sub-substrate (SSUB2). The second point (PP2_22) of the second side (SS2_2) of the second sub-substrate (SSUB2) may be defined as a midpoint between the center (SS2_2C) and the lower center (SS2_2BC) of the second side (SS2_2) of the second sub-substrate (SSUB2).

[0558] Referring to FIG. 44C, the third side surface (SS3_2) of the second sub-substrate (SSUB2) may have a curved shape with a varying radius of curvature. The curved shape of the upper portion (SS3_2U) and the curved shape of the lower portion (SS3_2B) of the third side surface (SS3_2) of the second sub-substrate (SSUB2) may be different. The upper portion (SS3_2U) of the third side surface (SS3_2) of the second sub-substrate (SSUB2) refers to an area positioned upper than the center (SS3_2C) of the third side surface (SS3_2) of the second sub-substrate (SSUB2). The lower portion (SS3_2B) of the third side surface (SS3_2) of the second sub-substrate (SSUB2) refers to an area positioned lower than the center (SS3_2C) of the third side surface (SS3_2) of the second sub-substrate (SSUB2).

[0559] The radius of curvature of the upper portion (SS3_2U) of the third side (SS3_2) of the second sub-substrate (SSUB2) and the radius of curvature of the lower portion (SS3_2B) of the third side (SS3_2) of the second sub-substrate (SSUB2) may be different. For example, the radius of curvature of the lower portion (SS3_2B) of the third side (SS3_2) of the second sub-substrate (SSUB2) may be smaller than the radius of curvature of the upper portion (SS3_2U) of the third side (SS3_2) of the second sub-substrate (SSUB2).

[0560] The radius of curvature of the upper portion (SS3_2U) of the third side (SS3_2) of the second sub-substrate (SSUB2) may be defined as the radius of curvature of a curve passing through the center (SS3_2C) of the third side (SS3_2) of the second sub-substrate (SSUB2), the upper end (SS3_2UE) of the third side (SS3_2) of the second sub-substrate (SSUB2), and the upper center (SS3_2UC) of the third side (SS3_2) of the second sub-substrate (SSUB2). The radius of curvature of the lower portion (SS3_2B) of the third side (SS3_2) of the second sub-substrate (SSUB2) may be defined as the radius of curvature of a curve passing through the center (SS3_2C) of the third side (SS3_2) of the second sub-substrate (SSUB2), the lower end (SS3_2BE) of the third side (SS3_2) of the second sub-substrate (SSUB2), and the lower center (SS3_2BC) of the third side (SS3_2) of the second sub-substrate (SSUB2).

[0561] Additionally, the radius of curvature of the central region of the third side (SS3_2) of the second sub-substrate (SSUB2) may be different from the radius of curvature of the upper portion (SS3_2U) of the third side (SS3_2) of the second sub-substrate (SSUB2) and the radius of curvature of the lower portion (SS3_2B) of the third side (SS3_2) of the second sub-substrate (SSUB2). The radius of curvature of the central region of the third side (SS3_2) of the second sub-substrate (SSUB2) may be defined as the radius of curvature of a curve passing through the center (SS3_2C), the upper center (SS3_2UC), and the lower center (SS3_2BC) of the third side (SS3_2) of the second sub-substrate (SSUB2).

[0562] Additionally, the difference between the radius of curvature of the upper central area (SS3_2UA) of the third side (SS3_2) of the second sub-substrate (SSUB2) and the radius of curvature of the lower central area (SS3_2BA) of the third side (SS3_2) of the second sub-substrate (SSUB2) may be smaller than the difference between the radius of curvature of the upper area (SS3_2U) of the third side (SS3_2) of the second sub-substrate (SSUB2) and the radius of curvature of the lower area (SS3_2B) of the third side (SS3_2) of the second sub-substrate (SSUB2). The radius of curvature of the upper central area (SS3_2UA) of the third side (SS3_2) of the second sub-substrate (SSUB2) and the radius of curvature of the lower central area (SS3_2BA) of the third side (SS3_2) of the second sub-substrate (SSUB2) may be substantially the same. Alternatively, the difference between the radius of curvature of the upper central area (SS3_2UA) of the third side (SS3_2) of the second sub-substrate (SSUB2) and the radius of curvature of the lower central area (SS3_2BA) of the third side (SS3_2) of the second sub-substrate (SSUB2) may be 30 μm or less.

[0563] The radius of curvature of the upper central area (SS3_2UA) of the third side (SS3_2) of the second sub-substrate (SSUB2) can be defined as the radius of curvature of a curve passing through the center (SS3_2C), the upper center (SS3_2UC), and the first point (PP1_32) of the third side (SS3_2) of the second sub-substrate (SSUB2). The radius of curvature of the lower central area (SS3_2BA) of the third side (SS3_2) of the second sub-substrate (SSUB2) can be defined as the radius of curvature of a curve passing through the center (SS3_2C), the lower center (SS3_2BC), and the second point (PP2_32) of the third side (SS3_2) of the second sub-substrate (SSUB2). The first point (PP1_32) of the third side (SS3_2) of the second sub-substrate (SSUB2) may be defined as a midpoint between the center (SS3_2C) and the upper center (SS3_2UC) of the third side (SS3_2) of the second sub-substrate (SSUB2). The second point (PP2_32) of the third side (SS3_2) of the second sub-substrate (SSUB2) may be defined as a midpoint between the center (SS3_2C) and the lower center (SS3_2BC) of the third side (SS3_2) of the third second sub-substrate (SSUB2) of the first sub-substrate (SSUB1).

[0564] Referring to FIG. 44d, the fourth side surface (SS4_2) of the second sub-substrate (SSUB2) may have a curved shape with a varying radius of curvature. The curved shape of the upper portion (SS4_2U) and the curved shape of the lower portion (SS4_2B) of the fourth side surface (SS4_2) of the second sub-substrate (SSUB2) may be different. The upper portion (SS4_2U) of the fourth side surface (SS4_2) of the second sub-substrate (SSUB2) refers to an area positioned upper than the center (SS4_2C) of the fourth side surface (SS4_2) of the second sub-substrate (SSUB2). The lower portion (SS4_2B) of the fourth side surface (SS4_2) of the second sub-substrate (SSUB2) refers to an area positioned lower than the center (SS4_2C) of the fourth side surface (SS4_2) of the second sub-substrate (SSUB2).

[0565] The radius of curvature of the upper portion (SS4_2U) of the fourth side (SS4_2) of the second sub-substrate (SSUB2) and the radius of curvature of the lower portion (SS4_2B) of the fourth side (SS4_2) of the second sub-substrate (SSUB2) may be different. For example, the radius of curvature of the lower portion (SS4_2B) of the fourth side (SS4_2) of the second sub-substrate (SSUB2) may be smaller than the radius of curvature of the upper portion (SS4_2U) of the fourth side (SS4_2) of the second sub-substrate (SSUB2).

[0566] The radius of curvature of the upper portion (SS4_2U) of the fourth side (SS4_2) of the second sub-substrate (SSUB2) may be defined as the radius of curvature of a curve passing through the center (SS4_2C) of the fourth side (SS4_2) of the second sub-substrate (SSUB2), the upper end (SS4_2UE) of the fourth side (SS4_2) of the second sub-substrate (SSUB2), and the upper center (SS4_2UC) of the fourth side (SS4_2) of the second sub-substrate (SSUB2). The radius of curvature of the lower portion (SS4_2B) of the fourth side (SS4_2) of the second sub-substrate (SSUB2) may be defined as the radius of curvature of a curve passing through the center (SS4_2C) of the fourth side (SS4_2) of the second sub-substrate (SSUB2), the lower end (SS4_2BE) of the fourth side (SS4_2) of the second sub-substrate (SSUB2), and the lower center (SS4_2BC) of the fourth side (SS4_2) of the second sub-substrate (SSUB2).

[0567] Additionally, the radius of curvature of the central region of the fourth side surface (SS4_2) of the second sub-substrate (SSUB2) may be different from the radius of curvature of the upper portion (SS4_2U) of the fourth side surface (SS4_2) of the second sub-substrate (SSUB2) and the radius of curvature of the lower portion (SS4_2B) of the fourth side surface (SS4_2) of the second sub-substrate (SSUB2). The radius of curvature of the central region of the fourth side surface (SS4_2) of the second sub-substrate (SSUB2) may be defined as the radius of curvature of a curve passing through the center (SS4_2C), the upper center (SS4_2UC), and the lower center (SS4_2BC) of the fourth side surface (SS4_2) of the second sub-substrate (SSUB2).

[0568] Additionally, the difference between the radius of curvature of the upper central area (SS4_2UA) of the fourth side (SS4_2) of the second sub-substrate (SSUB2) and the radius of curvature of the lower central area (SS4_2BA) of the fourth side (SS4_2) of the second sub-substrate (SSUB2) may be smaller than the difference between the radius of curvature of the upper area (SS4_2U) of the fourth side (SS4_2) of the second sub-substrate (SSUB2) and the radius of curvature of the lower area (SS4_2B) of the fourth side (SS4_2) of the second sub-substrate (SSUB2). The radius of curvature of the upper central area (SS4_2UA) of the fourth side (SS4_2) of the second sub-substrate (SSUB2) and the radius of curvature of the lower central area (SS4_2BA) of the fourth side (SS4_2) of the second sub-substrate (SSUB2) may be substantially the same. Alternatively, the difference between the radius of curvature of the upper central area (SS4_2UA) of the fourth side (SS4_2) of the second sub-substrate (SSUB2) and the radius of curvature of the lower central area (SS4_2BA) of the fourth side (SS4_2) of the second sub-substrate (SSUB2) may be 30 μm or less.

[0569] The radius of curvature of the upper central area (SS4_2UA) of the fourth side (SS4_2) of the second sub-substrate (SSUB2) can be defined as the radius of curvature of a curve passing through the center (SS4_2C), the upper center (SS4_2UC), and the first point (PP1_42) of the fourth side (SS4_2) of the second sub-substrate (SSUB2). The radius of curvature of the lower central area (SS4_2BA) of the fourth side (SS4_2) of the second sub-substrate (SSUB2) can be defined as the radius of curvature of a curve passing through the center (SS4_2C), the lower center (SS4_2BC), and the second point (PP2_42) of the fourth side (SS4_2) of the second sub-substrate (SSUB2). The first point (PP1_42) of the fourth side (SS4_2) of the second sub-substrate (SSUB2) may be defined as a midpoint between the center (SS4_2C) and the upper center (SS4_2UC) of the fourth side (SS4_2) of the second sub-substrate (SSUB2). The second point (PP2_42) of the fourth side (SS4_2) of the second sub-substrate (SSUB2) may be defined as a midpoint between the center (SS4_2C) and the lower center (SS4_2BC) of the fourth side (SS4_2) of the second sub-substrate (SSUB2).

[0570] Referring to FIGS. 44a to 44d, the radius of curvature of the upper portion (SS1_2U) of the first side (SS1_2) of the second sub-substrate (SSUB2), the radius of curvature of the upper portion (SS2_2U) of the second side (SS2_2), the radius of curvature of the upper portion (SS3_2U) of the third side (SS3_2), and the radius of curvature of the upper portion (SS4_2U) of the fourth side (SS4_2) may be similar to each other. For example, the radius of curvature of the upper portion (SS1_2U) of the first side (SS1_2) of the second sub-substrate (SSUB2), the radius of curvature of the upper portion (SS2_2U) of the second side (SS2_2), the radius of curvature of the upper portion (SS3_2U) of the third side (SS3_2), and the radius of curvature of the upper portion (SS4_2U) of the fourth side (SS4_2) may be 150 μm to 350 μm.

[0571] The difference between the radius of curvature of the upper portion (SS1_2U) of the first side (SS1_2) of the second sub-substrate (SSUB2) and the radius of curvature of the upper portion (SS2_2U) of the second side (SS2_2) may be less than approximately 30 μm. The difference between the radius of curvature of the upper portion (SS1_2U) of the first side (SS1_2) of the second sub-substrate (SSUB2) and the radius of curvature of the upper portion (SS3_2U) of the third side (SS3_2) may be less than approximately 30 μm. The difference between the radius of curvature of the upper portion (SS1_2U) of the first side (SS1_2) of the second sub-substrate (SSUB2) and the radius of curvature of the upper portion (SS4_2U) of the fourth side (SS4_2) may be less than approximately 30 μm. The difference between the radius of curvature of the upper portion (SS2_2U) of the second side (SS2_2) of the second sub-substrate (SSUB2) and the radius of curvature of the upper portion (SS3_2U) of the third side (SS3_2) may be less than approximately 30 μm. The difference between the radius of curvature of the upper portion (SS2_2U) of the second side (SS2_2) of the second sub-substrate (SSUB2) and the radius of curvature of the upper portion (SS4_2U) of the fourth side (SS4_2) may be less than approximately 30 μm. The difference between the radius of curvature of the upper portion (SS3_2U) of the third side (SS3_2) of the second sub-substrate (SSUB2) and the radius of curvature of the upper portion (SS4_2U) of the fourth side (SS4_2) may be less than approximately 30 μm.

[0572] In addition, referring to FIGS. 25A to 25D and FIGS. 44A to 44D, the curvature radius of the upper portion (SS1_2U) of the first side (SS1_2) of the second sub-substrate (SSUB2), the curvature radius of the upper portion (SS2_2U) of the second side (SS2_2), the curvature radius of the upper portion (SS3_2U) of the third side (SS3_2), and the curvature radius of the upper portion (SS4_2U) of the fourth side (SS4_2) may be similar to the curvature radius of the upper portion (SS1U) of the first side (SS1), the curvature radius of the upper portion (SS2U) of the second side (SS2), the curvature radius of the upper portion (SS3U) of the third side (SS3), and the curvature radius of the upper portion (SS4U) of the fourth side (SS4). For example, the difference between the curvature radii of the upper portion (SS1_2U) of the first side (SS1_2), the curvature radii of the upper portion (SS2_2U) of the second side (SS2_2), the curvature radii of the upper portion (SS3_2U) of the third side (SS3_2), and the curvature radii of the upper portion (SS4_2U) of the fourth side (SS4_2) of the second sub-substrate (SSUB2) and any one of the curvature radii of the upper portion (SS1U) of the first side (SS1), the curvature radii of the upper portion (SS2U) of the second side (SS2), the curvature radii of the upper portion (SS3U) of the third side (SS3), and the curvature radii of the upper portion (SS4U) of the fourth side (SS4) may be less than approximately 30 μm.

[0573] In addition, referring to FIGS. 35a to 35d and FIGS. 44a to 44d, the curvature radius of the upper portion (SS1_2U) of the first side (SS1_2) of the second sub-substrate (SSUB2), the curvature radius of the upper portion (SS2_2U) of the second side (SS2_2), the curvature radius of the upper portion (SS3_2U) of the third side (SS3_2), and the curvature radius of the upper portion (SS4_2U) of the fourth side (SS4_2) may be similar to the curvature radius of the upper portion (SSH1U) of the first hole side (SSH1), the curvature radius of the upper portion (SSH2U) of the second hole side (SSH2), the curvature radius of the upper portion (SSH3U) of the third hole side (SSH3), and the curvature radius of the upper portion (SSH4U) of the fourth hole side (SSH4). For example, the difference between any one of the curvature radii of the upper portion (SS1_2U) of the first side (SS1_2), the curvature radii of the upper portion (SS2_2U) of the second side (SS2_2), the curvature radii of the upper portion (SS3_2U) of the third side (SS3_2), and the curvature radii of the upper portion (SS4_2U) of the fourth side (SS4_2) of the second sub-substrate (SSUB2) and the curvature radii of the upper portion (SSH1U) of the first hole side (SSH1), the curvature radii of the upper portion (SSH2U) of the second hole side (SSH2), the curvature radii of the upper portion (SSH3U) of the third hole side (SSH3), and the curvature radii of the upper portion (SSH4U) of the fourth hole side (SSH4) may be less than approximately 30 μm.

[0574] In addition, referring to FIGS. 43a to 43d and FIGS. 44a to 44d, the curvature radius of the upper portion (SS1_2U) of the first side (SS1_2) of the second sub-substrate (SSUB2), the curvature radius of the upper portion (SS2_2U) of the second side (SS2_2), the curvature radius of the upper portion (SS3_2U) of the third side (SS3_2), and the curvature radius of the upper portion (SS4_2U) of the fourth side (SS4_2) are each a radius of curvature of the upper portion (SS1_1U) of the first side (SS1_1) of the first sub-substrate (SSUB1), the curvature radius of the upper portion (SS2_1U) of the second side (SS2_1), the curvature radius of the upper portion (SS3_1U) of the third side (SS3_1), and the curvature radius of the upper portion (SS4_1U) of the fourth side (SS4_1) It may be similar to the radius. For example, the difference between any one of the radii of curvature of the upper portion (SS1_2U) of the first side (SS1_2), the radii of curvature of the upper portion (SS1_2U) of the second side (SS2_2), the radii of curvature of the upper portion (SS3_2U) of the third side (SS3_2), and the radii of curvature of the upper portion (SS4_2U) of the fourth side (SS4_2) of the second sub-substrate (SSUB2) and the radii of curvature of the upper portion (SS1_1U) of the first side (SS1_1), the radii of curvature of the upper portion (SS2_1U) of the second side (SS2_1), the radii of curvature of the upper portion (SS3_1), and the radii of curvature of the upper portion (SS4_1U) of the fourth side (SS4_1) of the first sub-substrate (SSUB1) may be less than approximately 30 μm.

[0575] As shown in FIGS. 44a to 44d, the difference in the radius of curvature between the side surfaces (SS1_2, SS2_2, SS3_2, SS4_2) of the second sub-substrate (SSUB2) of the display panel (100) may be minimal. As a result, the mechanical strength can be maintained uniformly depending on the positions of the side surfaces (SS1_2, SS2_2, SS3_2, SS4_2) of the second sub-substrate (SSUB2) of the display panel (100).

[0576] Figures 45a to 45d are enlarged cross-sectional views showing further examples of the first to fourth side surfaces of the first sub-substrate in Figures 39 and 41. Figure 45a shows cross-sections of the first side surface (SS1_1) of the first sub-substrate (SSUB1), Figure 45b shows cross-sections of the second side surface (SS2_1) of the first sub-substrate (SSUB1), Figure 45c shows cross-sections of the third side surface (SS3_1) of the first sub-substrate (SSUB1), and Figure 45d shows cross-sections of the fourth side surface (SS4_1) of the first sub-substrate (SSUB1).

[0577] Referring to FIG. 45a, the first side surface (SS1_1) of the first sub-substrate (SSUB1) may have a first sub-side surface (SS11_1) having a planar or curved shape and a second sub-side surface (SS12_1) having a curved shape with a varying radius of curvature. The length of the first sub-side surface (SS11_1) of the first sub-substrate (SSUB1) may be shorter than the length of the second sub-side surface (SS12_1).

[0578] The first sub-side (SS11_1) of the first sub-substrate (SSUB1) may be connected to the upper surface (US), and the second sub-side (SS12_1) of the first sub-substrate (SSUB1) may be connected to the lower surface (BS). The angle between the first sub-side (SS11_1) of the first sub-substrate (SSUB1) and the upper surface (US) may be a right angle or an obtuse angle close to a right angle.

[0579] The curved shape of the upper portion (SS12_1U) of the second sub-side (SS12_1) of the first sub-substrate (SSUB1) and the curved shape of the lower portion (SS12_1B) of the second sub-side (SS12_1) may be different. The upper portion (SS12_1U) of the second sub-side (SS12_1) of the first sub-substrate (SSUB1) refers to an area positioned upper than the center (SS12_1C) of the second sub-side (SS12_1). The lower portion (SS12_1B) of the second sub-side (SS12_1) of the first sub-substrate (SSUB1) refers to an area positioned lower than the center (SS12_1C) of the second sub-side (SS12_1).

[0580] The radius of curvature of the upper portion (SS12_1U) of the second sub-side (SS12_1) of the first sub-substrate (SSUB1) and the radius of curvature of the lower portion (SS12_1B) of the second sub-side (SS12_1) may be different. For example, the radius of curvature of the lower portion (SS12_1B) of the second sub-side (SS12_1) of the first sub-substrate (SSUB1) may be smaller than the radius of curvature of the upper portion (SS12_1U) of the second sub-side (SS12_1).

[0581] The radius of curvature of the upper portion (SS12_1U) of the second sub-side (SS12_1) of the first sub-substrate (SSUB1) may be defined as the radius of curvature of a curve passing through the center (SS12_1C) of the second sub-side (SS12_1), the upper end (SS12_1UE) of the second sub-side (SS12_1), and the upper center (SS12_1UC) of the second sub-side (SS12_1). The radius of curvature of the lower portion (SS12_1B) of the second sub-side (SS12_1) of the first sub-substrate (SSUB1) may be defined as the radius of curvature of a curve passing through the center (SS12_1C) of the second sub-side (SS12_1), the lower end (SS12_1BE) of the second sub-side (SS12_1), and the lower center (SS12_1BC) of the second sub-side (SS12_1).

[0582] Additionally, the radius of curvature of the central region of the second sub-side (SS12_1) of the first sub-substrate (SSUB1) may be different from the radius of curvature of the upper portion (SS12_1U) and the radius of curvature of the lower portion (SS12_1B) of the second sub-side (SS12_1) of the first sub-substrate (SSUB1). The radius of curvature of the central region of the second sub-side (SS12_1) of the first sub-substrate (SSUB1) may be defined as the radius of curvature of a curve passing through the center (SS12_1C), the upper center (SS12_1UC), and the lower center (SS12_1BC) of the second sub-side (SS12_1) of the first sub-substrate (SSUB1).

[0583] Additionally, the difference between the radius of curvature of the upper central region (SS12_1UA) and the radius of curvature of the lower central region (SS12_1BA) of the second sub-side (SS12_1) of the first sub-substrate (SSUB1) may be smaller than the difference between the radius of curvature of the upper region (SS12_1U) and the radius of curvature of the lower region (SS12_1B) of the second sub-side (SS12_1) of the first sub-substrate (SSUB1). The radius of curvature of the upper central region (SS12_1UA) and the radius of curvature of the lower central region (SS12_1BA) of the second sub-side (SS12_1) of the first sub-substrate (SSUB1) may be substantially the same. Alternatively, the difference between the radius of curvature of the upper central area (SS12_1UA) of t...

Claims

1. A glass substrate including a first surface, a second surface facing the first surface, and a plurality of side surfaces disposed between the first surface and the second surface; and A light-emitting element layer is provided on the first surface of the glass substrate and includes light-emitting elements that emit light, The plurality of side surfaces of the glass substrate include a first side surface and a second side surface, The radius of curvature measured from the center of said first side, the upper end of said first side, and the upper center between said center and said upper end of said first side is defined as the first upper radius of curvature, The radius of curvature measured from the center of the second side, the upper end of the second side, and the upper center between the center and the upper end of the second side is defined as the second upper radius of curvature, A display device wherein the difference between the first upper radius of curvature and the second upper radius of curvature is 30 μm or less.

2. In paragraph 1, The radius of curvature measured from the center of the first side, the lower end of the first side, and the lower center between the center and the lower end of the first side is defined as the first lower radius of curvature, A display device wherein the first lower radius of curvature is different from the first upper radius of curvature.

3. In paragraph 2, A display device wherein the first lower radius of curvature is smaller than the first upper radius of curvature.

4. In paragraph 1, The plurality of side surfaces of the glass substrate further include a third side surface, The radius of curvature measured from the center of the third side, the upper end of the third side, and the upper center between the center and the upper end of the third side is defined as the third upper radius of curvature, A display device wherein a difference between the first upper radius of curvature and the third upper radius of curvature, and a difference between the second upper radius of curvature and the third upper radius of curvature are 30 μm or less.

5. In paragraph 4, The radius of curvature measured from the center of the second side, the lower end of the second side, and the lower center between the center and the lower end of the second side is defined as the second lower radius of curvature, A display device wherein the second lower radius of curvature is different from the second upper radius of curvature.

6. In paragraph 5, A display device wherein the second lower radius of curvature is smaller than the second upper radius of curvature.

7. In paragraph 4, The plurality of side surfaces of the glass substrate further include a fourth side surface, The radius of curvature measured from the center of the fourth side, the upper end of the fourth side, and the upper center between the center and the upper end of the fourth side is defined as the fourth upper radius of curvature, A display device wherein a difference between the first upper radius of curvature and the fourth upper radius of curvature, a difference between the second upper radius of curvature and the fourth upper radius of curvature, and a difference between the third upper radius of curvature and the fourth upper radius of curvature are 30 μm or less.

8. In paragraph 7, The radius of curvature measured from the center of the third side, the lower end of the third side, and the lower center between the center and the lower end of the third side is defined as the third lower radius of curvature, A display device wherein the third lower radius of curvature is different from the third upper radius of curvature.

9. In paragraph 8, A display device wherein the third lower radius of curvature is smaller than the third upper radius of curvature.

10. In paragraph 1, The above glass substrate further includes a through hole penetrating the first surface and the second surface, The radius of curvature measured from the center of the first hole side of the above through hole, the upper end of the first hole side, and the upper center between the center and the upper end of the first hole side is defined as the first hole upper curvature radius, A display device wherein a difference between the first upper radius of curvature and the first hole upper radius of curvature, and a difference between the second upper radius of curvature and the first hole upper radius of curvature are 30 μm or less.

11. In Article 10, The radius of curvature measured from the center of the first hole side, the lower end of the first hole side, and the lower center between the center and the lower end of the first hole side is defined as the first hole lower curvature radius, A display device wherein the first hole lower radius of curvature is different from the first hole upper radius of curvature.

12. In paragraph 11, A display device wherein the first hole lower curvature radius is smaller than the first hole upper curvature radius.

13. In paragraph 10, The radius of curvature measured from the center of the second hole side of the above through hole, the upper end of the second hole side, and the upper center between the center and the upper end of the second hole side is defined as the second hole upper curvature radius, A display device wherein the difference between the upper curvature radius of the first hole and the upper curvature radius of the second hole is 30 μm or less.

14. In paragraph 13, A display device wherein a difference between the first upper radius of curvature and the second hole upper radius of curvature, and a difference between the second upper radius of curvature and the second hole upper radius of curvature are 30 μm or less.

15. In paragraph 13, The radius of curvature measured from the center of the second hole side, the lower end of the second hole side, and the lower center between the center and the lower end of the second hole side is defined as the second hole lower curvature radius, A display device wherein the lower curvature radius of the second hole is different from the upper curvature radius of the second hole.

16. In paragraph 15, A display device wherein the lower curvature radius of the second hole is smaller than the upper curvature radius of the second hole.

17. A glass substrate including a first surface, a second surface facing the first surface, and a plurality of side surfaces disposed between the first surface and the second surface; and A light-emitting element layer is provided on the first surface of the glass substrate and includes light-emitting elements that emit light, Each of the plurality of side surfaces of the glass substrate includes a first sub-side having a planar shape and a second sub-side having a curved shape, The length of the second sub-side is longer than the length of the first sub-side, A display device wherein the first sub-side is in contact with the first side, and the second sub-side is in contact with the second side.

18. In paragraph 17, The radius of curvature measured from the center of the second sub-side, the upper end of the second sub-side, and the upper center of the second sub-side is defined as the upper radius of curvature, The radius of curvature measured from the center of the second sub-side, the lower end of the second sub-side, and the lower center of the second sub-side is defined as the lower radius of curvature, The display device wherein the lower radius of curvature is different from the upper radius of curvature.

19. In paragraph 18, A display device wherein the lower radius of curvature is smaller than the upper radius of curvature.

20. In paragraph 18, The above glass substrate further includes a through hole penetrating the first surface and the second surface, The radius of curvature measured from the center of the hole side of the above through hole, the upper end of the hole side, and the upper center between the center and the upper end of the hole side is defined as the hole upper curvature radius, The radius of curvature measured from the center of the side surface of the hole, the lower end of the side surface of the hole, and the lower center of the side surface of the hole is defined as the lower radius of curvature of the hole. An indicator device in which the radius of curvature of the lower portion of the hole is different from the radius of curvature of the upper portion of the hole.

21. In paragraph 20, A display device in which the radius of curvature of the lower portion of the hole is smaller than the radius of curvature of the upper portion of the hole.

22. In paragraph 20, A display device wherein the difference between the upper curvature radius and the hole upper curvature radius is 30㎛ or less.

23. A first substrate including a first surface and a second surface facing the first surface; A second substrate disposed on the first surface of the first substrate; and A light-emitting element layer is provided on one surface of the second substrate and includes light-emitting elements that emit light, The first substrate is made of glass, and the second substrate is made of polymer resin. The first substrate includes a first sub-substrate and a second sub-substrate which are arranged separately from each other, The radius of curvature measured from the center of the first side of the first sub-substrate, the upper end of the first side, and the upper center between the center and the upper end of the first side is defined as the first upper radius of curvature, The radius of curvature measured from the center of the second side of the first sub-substrate, the upper end of the second side, and the upper center between the center and the upper end of the second side is defined as the second upper radius of curvature, A display device wherein the difference between the first upper radius of curvature and the second upper radius of curvature is 30 μm or less.

24. In paragraph 23, A display device wherein the area of ​​the first sub-substrate is larger than the area of ​​the second sub-substrate.

25. In paragraph 23, The radius of curvature measured from the center of the first side, the lower end of the first side, and the lower center between the center and the lower end of the first side is defined as the first lower radius of curvature, A display device wherein the first lower radius of curvature is different from the first upper radius of curvature.

26. In paragraph 25, A display device wherein the first lower radius of curvature is smaller than the first upper radius of curvature.

27. In paragraph 23, The second sub-board includes a third side and a fourth side, The radius of curvature measured from the center of the third side, the upper end of the third side, and the upper center between the center and the upper end of the third side is defined as the third upper radius of curvature, A display device wherein a difference between the first upper radius of curvature and the third upper radius of curvature, and a difference between the second upper radius of curvature and the third upper radius of curvature are 30 μm or less.

28. In paragraph 27, The radius of curvature measured from the center of the fourth side, the upper end of the fourth side, and the upper center between the center and the upper end of the fourth side is defined as the fourth upper radius of curvature, A display device wherein the difference between the third upper radius of curvature and the fourth upper radius of curvature is 30 μm or less.

29. In paragraph 28, A display device wherein a difference between the first upper radius of curvature and the fourth upper radius of curvature, and a difference between the second upper radius of curvature and the fourth upper radius of curvature are 30 μm or less.

30. In paragraph 27, The above first substrate further includes a through hole penetrating the first surface and the second surface, The radius of curvature measured from the center of the hole side of the above through hole, the upper end of the hole side, and the upper center between the center and the upper end of the hole side is defined as the hole upper curvature radius, A display device wherein a difference between the first upper radius of curvature and the upper radius of curvature of the hole, a difference between the second upper radius of curvature and the upper radius of curvature of the hole, and a difference between the third upper radius of curvature and the upper radius of curvature of the hole are 30 μm or less.

31. In paragraph 30, The radius of curvature measured from the center of the hole side, the lower end of the hole side, and the lower center between the center and the lower end of the hole side is defined as the hole lower curvature radius, An indicator device in which the radius of curvature of the lower portion of the hole is different from the radius of curvature of the upper portion of the hole.

32. In paragraph 31, A display device in which the radius of curvature of the lower portion of the hole is smaller than the radius of curvature of the upper portion of the hole.

33. A first substrate including a first surface and a second surface facing the first surface; A second substrate disposed on the first surface of the first substrate; and A light-emitting element layer is provided on one surface of the second substrate and includes light-emitting elements that emit light, The first substrate is made of glass, and the second substrate is made of polymer resin. The first substrate includes a first sub-substrate and a second sub-substrate which are positioned separately from each other, Each of the plurality of side surfaces of the first sub-substrate includes a first sub-side having a planar shape and a second sub-side having a curved shape, The length of the second sub-side is longer than the length of the first sub-side, A display device wherein the first sub-side is in contact with the first side, and the second sub-side is in contact with the second side.

34. In paragraph 33, The radius of curvature measured from the center of the second sub-side, the upper end of the second sub-side, and the upper center of the second sub-side is defined as the first upper radius of curvature, The radius of curvature measured from the center of the second sub-side, the lower end of the second sub-side, and the lower center of the second sub-side is defined as the first lower radius of curvature, A display device wherein the first lower radius of curvature is different from the first upper radius of curvature.

35. In paragraph 34, A display device wherein the first lower radius of curvature is smaller than the first upper radius of curvature.

36. In paragraph 34, Each of the plurality of side surfaces of the second sub-substrate includes a third sub-side having a planar shape and a fourth sub-side having a curved shape, The length of the fourth sub-side is longer than the length of the third sub-side, A display device wherein the third sub-side is in contact with the first side, and the fourth sub-side is in contact with the second side.

37. In paragraph 36, The radius of curvature measured from the center of the fourth sub-side, the upper end of the fourth sub-side, and the upper center of the fourth sub-side is defined as the second upper radius of curvature, The radius of curvature measured from the center of the fourth sub-side, the lower end of the fourth sub-side, and the lower center of the fourth sub-side is defined as the second lower radius of curvature, A display device wherein the second lower radius of curvature is different from the second upper radius of curvature.

38. In paragraph 37, A display device wherein the second lower radius of curvature is smaller than the second upper radius of curvature.

39. In paragraph 37, A display device wherein the difference between the first upper radius of curvature and the second upper radius of curvature is 30 μm or less.

40. In paragraph 37, The above first substrate further includes a through hole penetrating the first surface and the second surface, The radius of curvature measured from the center of the hole side of the above through hole, the upper end of the hole side, and the upper center between the center and the upper end of the hole side is defined as the hole upper curvature radius, The radius of curvature measured from the center of the side surface of the hole, the lower end of the side surface of the hole, and the lower center of the side surface of the hole is defined as the lower radius of curvature of the hole. An indicator device in which the radius of curvature of the lower portion of the hole is different from the radius of curvature of the upper portion of the hole.

41. In paragraph 40, A display device in which the radius of curvature of the lower portion of the hole is smaller than the radius of curvature of the upper portion of the hole.

42. In paragraph 40, A display device wherein a difference between the first upper radius of curvature and the upper radius of curvature of the hole, and a difference between the second upper radius of curvature and the upper radius of curvature of the hole are 30 μm or less.

43. A light source that outputs a laser beam; A diffractive element comprising diffraction patterns for diffracting the laser beam; A relay lens that transmits a laser beam diffracted by the above diffraction patterns at a predetermined ratio; A phase delay plate that delays the phase of the laser beam incident from the diffractive element; and Equipped with an objective lens for focusing a laser beam incident from the above phase delay plate, The above diffractive element is a laser device that rotates at a predetermined angle.

44. In paragraph 43, A laser device in which the light source outputs a laser beam having linear polarization or circular polarization, and the laser beam output from the objective lens has elliptical polarization.

45. In paragraph 43, The above phase delay plate is a laser device which is a quarter wavelength plate.

46. ​​In paragraph 43, A laser device further comprising a relay lens that transmits a laser beam diffracted by the above diffraction patterns at a predetermined ratio.

47. In paragraph 46, A laser device in which the relay lens is placed between the phase delay plate and the objective lens.

48. In paragraph 46, A laser device in which the relay lens is placed between the light source and the diffractive element.

49. A light source that outputs a laser beam; A diffractive element comprising diffraction patterns for diffracting the laser beam; A prism configured to rotate to rotate a laser beam incident from the above diffractive element; A phase delay plate that delays the phase of the laser beam incident from the prism; and Equipped with an objective lens for focusing a laser beam incident from the above phase delay plate, A laser device in which the prism and the phase delay plate rotate simultaneously at a predetermined angle.

50. In paragraph 49, A laser device wherein the above prism is a dove prism having a trapezoidal cross-section.

51. In paragraph 49, A laser device in which the light source outputs a laser beam having circular polarization, and the laser beam passing through the objective lens has elliptical polarization.

52. In paragraph 49, The above phase delay plate is a laser device which is a quarter wavelength plate.

53. In paragraph 49, A laser device further comprising a relay lens that transmits a laser beam diffracted by the above diffraction patterns at a predetermined ratio.

54. In paragraph 53, A laser device in which the relay lens is placed between the phase delay plate and the objective lens.

55. In paragraph 53, A laser device in which the relay lens is placed between the diffractive element and the prism.

56. A step of forming a plurality of display cells on a first surface of a substrate; A step of forming a plurality of laser spots arranged along the edges of the plurality of display cells by irradiating a laser beam using a laser device on a second surface of the substrate facing the first surface; A step of reducing the thickness of the substrate by spraying an etchant at a first speed on the second surface of the substrate without a mask; and A step of reducing the thickness of the mother substrate by spraying the etchant at a second speed on the second surface of the mother substrate without the mask, A method for manufacturing a display device wherein the first speed is faster than the second speed.

57. In paragraph 56, A method for manufacturing a display device, wherein the first speed is within a range of 7 μm / min to 10 μm / min, and the second speed is within a range of 1 μm / min to 5 μm / min.

58. In paragraph 56, A method for manufacturing a display device, wherein the pulse period of the laser beam is in a range of 3 ps to 10 ps.

59. In paragraph 56, A method for manufacturing a display device, wherein the burst pulse of the laser beam is in the range of 1 to 10 pulses 60. In paragraph 56, A method for manufacturing a display device, wherein the pulse energy of the laser beam is in the range of 2 to 4 μJ / spot.

61. In paragraph 56, A method for manufacturing a display device, wherein the repetition rate of the laser beam is in a range of approximately 10 kHz to 500 kHz.

62. In paragraph 56, A method for manufacturing a display device, wherein the length of the plurality of laser spots arranged in the thickness direction of the substrate is within a range of 0.4 to 0.6 of the thickness of the substrate.

63. In paragraph 56, The above plurality of laser spots include a first group of laser spots and a second group of laser spots which are arranged apart from each other in the scan direction of the laser device, A method for manufacturing a display device, wherein the distance between the first group of laser spots and the second group of laser spots in the scan direction of the laser device is within a range of 2 μm to 7 μm.

64. In paragraph 56, A method for manufacturing a display device, wherein, in a two-dimensional plane defined by the thickness direction of the substrate and the direction of one side of the substrate, the arrangement of the laser spots arranged in the first area and the arrangement of the laser spots arranged in the second area among the plurality of laser spots are asymmetrical.

65. In paragraph 64, A method for manufacturing a display device, wherein the radius of curvature of a curve formed by laser spots arranged in the first region and the radius of curvature of a curve formed by laser spots arranged in the second region are different.

66. In paragraph 64, A method for manufacturing a display device, wherein the radius of curvature of a curve formed by laser spots arranged in the first region and the radius of curvature of a curve formed by laser spots arranged in the second region are within a range of 100 ㎛ to 300 ㎛.

67. In paragraph 56, A method for manufacturing a display device, wherein the length along which the plurality of laser spots are arranged in the thickness direction of the substrate is the same as the thickness of the substrate.

68. In paragraph 56, A method for manufacturing a display device, wherein the plurality of laser spots include laser spots arranged in a first area and laser spots arranged in a second area in a two-dimensional plane defined by the thickness direction of the substrate and the direction of one side of the substrate.

69. In paragraph 68, A method for manufacturing a display device, wherein the radius of curvature of a curve formed by laser spots arranged in the first region is smaller than the radius of curvature of a curve formed by laser spots arranged in the second region.

70. In paragraph 68, A method for manufacturing a display device, wherein the spacing between the laser spots in the second region is greater than the spacing between the laser spots in the first region.

71. In paragraph 68, A method for manufacturing a display device, wherein the spacing between the laser spots in the second region increases from the bottom to the top.

72. In paragraph 68, A method for manufacturing a display device, wherein the spacing between the laser spots is in the range of 3 ㎛ to 20 ㎛.

73. In paragraph 68, A method for manufacturing a display device, wherein the length of the second region in the thickness direction of the substrate is greater than the length of the first region.

74. In paragraph 68, A method for manufacturing a display device, wherein the length of the second region in the direction of one side of the substrate is within a range of 80 µm to 150 µm, the length of the second region in the direction of the thickness of the substrate is within a range of 430 µm to 470 µm, the length of the first region is within a range of 30 µm to 70 µm, and the radius of curvature of the first region is within a range of 200 µm to 600 µm.

75. In paragraph 56, The step of forming a plurality of laser spots arranged along the edges of the plurality of display cells by irradiating a laser beam of a laser device on a second surface facing the first surface of the above-mentioned substrate is as follows: A step of scanning a laser beam in a first direction along a first side edge of one of the plurality of display cells; A step of continuously rotating the laser device from 0° to a first angle and scanning the laser beam along a first corner edge disposed between the first side edge and the second side edge of the display cell; and A method for manufacturing a display device, comprising the step of scanning a laser beam in a second direction intersecting the first direction along a second side edge of the display cell while rotating the laser device at the first angle.

76. In paragraph 75, A method for manufacturing a display device, wherein an elliptically polarized laser beam is provided to the first side edge, the first corner edge, and the second side edge of the display cell.

77. In paragraph 56, The step of irradiating a laser beam on a second surface facing the first surface of the above substrate to form a plurality of laser spots arranged along the edges of the plurality of display cells is as follows: A method for manufacturing a display device, comprising the step of irradiating the laser beam of the laser device onto the second surface of the substrate to form a plurality of laser spots arranged along edges of through holes penetrating the first surface and the second surface of the substrate together with the plurality of display cells.

78. In paragraph 77, A step of irradiating the laser beam along the edges of the plurality of display cells while rotating in either a clockwise or counterclockwise direction using the laser device; and A method for manufacturing a display device, comprising the step of irradiating the laser beam along the edges of the through hole while rotating in a direction other than the one selected from the clockwise and counterclockwise directions using the laser device.

79. In paragraph 77, The step of irradiating the laser beam of the laser device on the second surface of the substrate to form a plurality of laser spots arranged along the edges of the through holes penetrating the first surface and the second surface of the substrate together with the plurality of display cells is, A method for manufacturing a display device, wherein the laser device is rotated continuously from 0° to 360° and the laser beam is scanned along the edges of the through hole.

80. In paragraph 78, A method for manufacturing a display device, wherein an elliptically polarized laser beam is provided to the edges of the above through holes.

81. Equipped with a display device that displays images, The above display device, A glass substrate comprising a first surface, a second surface facing the first surface, and a plurality of side surfaces disposed between the first surface and the second surface; and A light-emitting element layer is provided on the first surface of the glass substrate and includes light-emitting elements that emit light, The plurality of side surfaces of the glass substrate include a first side surface and a second side surface, The radius of curvature measured from the center of said first side, the upper end of said first side, and the upper center between said center and said upper end of said first side is defined as the first upper radius of curvature, The radius of curvature measured from the center of the second side, the upper end of the second side, and the upper center between the center and the upper end of the second side is defined as the second upper radius of curvature, An electronic device wherein the difference between the first upper radius of curvature and the second upper radius of curvature is 30 μm or less.

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