Method for planarizing structure of hybrid bonding and device for planarizing structure of hybrid bonding

Abstract

The present invention relates to a method for planarizing a structure of a hybrid bonding and a device for planarizing a structure of a hybrid bonding. The present invention provides the method for planarizing a structure of a hybrid bonding and the device for planarizing a structure of a hybrid bonding which may form a recess necessary for a hybrid bonding process between bonding units during a semiconductor and display manufacturing process in an appropriate shape without rounding due to over-polishing of an oxide film while removing polishing residues existing on a surface of the oxide film and a metal layer.

Description

Method for structural planarization of hybrid bonding and device for structural planarization of hybrid bonding

[0001] The present invention relates to a method for planarizing a structure of hybrid bonding and a device for planarizing a structure of hybrid bonding, and more particularly, to a method for planarizing a structure of hybrid bonding and a device for planarizing a structure of hybrid bonding capable of forming a recess necessary for a hybrid bonding process between joints during a semiconductor and display manufacturing process in an appropriate shape without a rounding phenomenon due to over-polishing of an oxide film, while simultaneously removing polishing residues existing on the surface of an oxide film and a metal layer.

[0002] Among the semiconductor and display manufacturing processes, the chemical mechanical polishing (hereinafter referred to as "CMP") process, also called a planarization process, is a process that combines a physical process such as abrasion and a chemical process such as oxidation or chelation to remove part of the barrier metal (hereinafter referred to as "metal layer") and form a recess.

[0003] The above CMP process uses a pad, slurry, and conditioner. The pad provides mechanical force through the pressure of a carrier and can uniformly transfer the slurry to the wafer surface through grooves and pores.

[0004] The above pads are made of polyurethane and come in different types depending on their intended use. The slurry is divided into oxide and metal types. Metal polishing uses acids and oxidizing agents to oxidize the surface, while oxide polishing uses ingredients that can form hydroxide on the surface.

[0005] The slurry has a very small particle size of about 0.1 um and may cause scratches if it agglomerates, so it is stirred to maintain a complete slurry state.

[0006] As the conditioner accumulates on the pad surface due to glazing residue, its removal ability decreases. Therefore, the pad surface where the glazing residue has accumulated is artificially abraded using diamond grit to restore it to its original state.

[0007] Specifically, the CMP process is performed by applying a polishing slurry composition having active chemical properties to a polishing pad that rubs the surface of a semiconductor wafer, and the polishing particles contained in the polishing slurry composition and the surface protrusions of the polishing pad cause mechanical friction with the surface of the semiconductor wafer, thereby performing mechanical polishing, thereby effectively removing excess materials used in layer formation.

[0008] The chemical component included in the polishing slurry composition selectively removes the surface of the semiconductor wafer while inducing a selective chemical reaction on the surface of the semiconductor wafer.

[0009] After the above CMP process, contaminants such as residues generated during the CMP process or particles from the removed layer are generated, and these residues or contaminants cause wiring damage during various subsequent processes such as forming metal wiring or various structures, etching, or recessed bonding between die and die, die and wafer, or wafer and wafer, which is called hybrid bonding, and cause damage to the surface of the structure, which directly causes poor electrical performance of semiconductor devices. In other words, a cleaning process is required as an essential subsequent process to remove a significant amount of polishing residue present on the oxide film (oxide film layer surface) and the metal layer surface.

[0010] The CMP process can be applied to hybrid bonding.

[0011] The above hybrid bonding is a difficult technology to control because it must be able to bond without affecting each other by using pressure and heat for the dielectric bonding and thermal expansion for the metal bonding.

[0012] Accordingly, due to the high conductivity and excellent electromigration resistance of copper, copper is widely used in the manufacture of hybrid bonding, and an oxide film (such as SiO2) can be used as the dielectric.

[0013] Typically, the hybrid bonding process involves copper pad formation and bonding. The vias in integrated circuits typically have high aspect ratios. To fill these deep vias without seams or voids, a thick copper layer is deposited on the substrate surface, which is then removed using a chemical mechanical polishing (CMP) process.

[0014] Because these CMP processes utilize the selectivity between two materials with different removal rates, dishing, a phenomenon that creates a step difference in the target film being CMPed, is unavoidable. For example, when a metal layer is deposited between oxide layers during metal CMP, initially only the metal layer is polished. However, at some point, the metal layer with the higher removal rate is removed more than the oxide layer, forming a so-called rounding structure. This can cause increased metal resistance.

[0015] Accordingly, when forming a recess between joints required for hybrid bonding, there is a need to develop a technology that can effectively remove polishing residues existing on the surface of the oxide film and the metal layer while forming a rounded structure due to over-polishing of the oxide film, thereby solving the problem of increased metal resistance and providing improved bonding strength in the hybrid bonding process.

[0016] [Prior Art Literature]

[0017] [Patent Document]

[0018] Korean Patent Publication No. 2022-0058414

[0019] In order to solve the problems of the prior art as described above, the present invention aims to provide a novel hybrid bonding structure planarization method and a hybrid bonding structure planarization device.

[0020] In addition, the present invention provides a method for planarizing a hybrid bonding structure and a device for planarizing a hybrid bonding structure, which form a recess necessary for a hybrid bonding process between joints in an appropriate shape without a rounding phenomenon due to overpolishing of an oxide film, thereby suppressing the etching of an oxide film existing on the surface of an oxide film and a metal layer, thereby suppressing the rounding phenomenon due to overpolishing, and simultaneously improving etching ability and cleaning ability to enable cleaning of polishing residue existing on the surface of an oxide film and a metal layer, and providing excellent hybrid bonding adhesion.

[0021] The above and other objects of the present invention can all be achieved by the present invention described below.

[0022] In order to achieve the above purpose, the present invention provides I) a method for planarizing a hybrid bonding structure.

[0023] II) In the above I), the hybrid bonding structure includes a substrate; a via formed in a recessed area of ​​the substrate; an oxide layer formed in each of the recessed area and the non-recessed area of ​​the substrate; a barrier layer formed on the lower part and sidewalls of the via and on the oxide layer; and a metal layer formed in the via and on the barrier layer.

[0024] III) In the above I) to II), the method for planarizing the structure of the hybrid bonding includes a first step of removing a metal layer formed on a non-recessed area of ​​the substrate; a second step of removing a metal layer residue, an oxide layer, and a barrier layer formed on the oxide layer on the non-recessed area; a third step of planarizing a step difference between the metal layer and the oxide layer formed in the via; and a fourth step of planarizing a metal thermal expansion space while removing a barrier layer formed on a lower portion and a sidewall of the via.

[0025] IV) In the above I) to III), the material of the metal layer may be copper.

[0026] V) In the above I) to IV), the material of the barrier layer may include at least one selected from Ti, TiN, Ta, and TaN.

[0027] VI) In the above I) to V), the material of the oxide layer may include at least one selected from Si, SiO2, and SiCN.

[0028] VII) In the above I) to VI), the metal layer removed in the first step may be all the metal layers deposited on the non-recessed area and some of the metal layers formed within the via.

[0029] VIII) In the above I) to VII), the first, second and third steps can be performed by a CMP process.

[0030] IX) In the above I) to VIII), the second and third steps can be performed simultaneously.

[0031] X) In the above I) to IX), the second and third steps can be performed using a slurry in which the selectivity ratio for the polishing speed of the oxide layer and the metal layer is adjusted to 1:1.

[0032] XI) In the above I) to X), the slurry may include abrasive particles, a corrosion inhibitor, a complexing agent, and an oxidizing agent.

[0033] XII) In the above I) to XI), the slurry may include 0.05 to 5 wt% of silica particles, 0.001 to 1 wt% of an azole corrosion inhibitor containing at least one N group, 0.001 to 0.5 wt% of an amino acid complexing agent, and 0.05 to 1 wt% of an oxidizing agent, and the remainder may be water.

[0034] XIII) In the above I) to XII), the fourth step can be performed by filling the recess area of ​​the substrate with an etching cleaning solution composition.

[0035] XIV) In the above I) to XIII), a step (e) of filling the recess area of ​​the substrate with DW (deionized water) after filling with the etching cleaning solution composition in the fourth step may be included.

[0036] XV) In the above I) to XIV), the etching cleaning solution composition and DW can be filled using at least one selected from among pads and brushes independently selected from each other.

[0037] XVI) In the above I) to XV), the etching cleaning solution composition may be a basic solution containing an etching agent; a metal corrosion inhibitor; a silicon film etching inhibitor; a basic compound containing a hydroxyl group; and an alkanol amine compound.

[0038] XVII) In the above I) to XVI), the etching agent may be a compound that contains a carboxyl group and performs the function of selectively etching copper or titanium.

[0039] XVIII) In the above I) to XVII), the etching species may be, for example, at least one selected from asparagine, ammonium citrate, glycine, arginine, histidine, lysine, alanine, citric acid, aspartic acid, and glutamic acid, and specific examples thereof may include ammonium citrate, citric acid, and the like.

[0040] XIX) In the above I) to XVIII), the etching agent may be included in an amount of, for example, 0.1 to 10 wt% based on the total weight of the etching cleaning solution composition.

[0041] XX) In the above I) to XIX), the metal corrosion inhibitor may be a compound that contains a functional group with a high reducing power and prevents corrosion of copper or titanium.

[0042] XXI) In the above I) to XX), the silicon film etching inhibitor may be a sulfonic acid group-containing compound that prevents etching of a silicon-based oxide film such as silicon, a silicon oxide film, a silicon nitride film, or a silicon carbon nitride film.

[0043] XXII) In the above I) to XXI), the basic compound containing the hydroxyl group may be a compound that adjusts the pH of the etching cleaning solution composition to 8 or higher.

[0044] XXIII) In the above I) to XXII), the pH of the etching cleaning solution composition may be in the range of 8 to 14.

[0045] XXIV) In the above I) to XXIII), the fourth step can be performed by chemical immersion or physical scrubbing.

[0046] XXV) In the above I) to XXIV), the etching cleaning composition can etch and planarize the metal layer included in the via at an etching rate of 50 Å / min or less.

[0047] XXVI) In the above I) to XXV), the etching cleaning composition can remove polishing residues present on the oxide layer and the metal layer surface.

[0048] XXVII) In the above I) to XXVI), the structure planarization process of the hybrid bonding may include a step of activating the surface in a pulse mode after the fourth step; a step of pre-bonding the die and the wafer; and a step of densely bonding the bonding structure between the die and the wafer through thermal expansion.

[0049] In addition, the present invention provides a structure planarization device of XXVIII) hybrid bonding.

[0050] XXIX) In the above XXVIII), the structure of the hybrid bonding includes a substrate; a via formed in a recessed area of ​​the substrate; an oxide layer formed in each of the recessed area and the non-recessed area of ​​the substrate; a barrier layer formed on the bottom and side walls of the via and on the oxide layer; and a metal layer formed in the via and on the barrier layer.

[0051] XXX) In the above XXVIII) to XXIX), the structure planarization device of the hybrid bonding includes at least two CMP modules; and an etching cleaning module.

[0052] XXXI) In the above XXVIII) to XXX), at least two CMP modules are used to apply a chemical mechanical polishing process to the substrate to remove a metal layer on a non-recessed area. A second or more module among the two or more CMP modules can be used to planarize a step difference between the metal layer and the oxide layer formed in the via using a slurry in which a selectivity for polishing speeds of the oxide layer and the metal layer is adjusted to 1:1.

[0053] XXXII) In the above XXVIII) to XXXI), the etching cleaning module can be used to fill a recessed area of ​​the substrate with an etching cleaning solution composition to remove a barrier layer formed on the lower part and side walls of the via while flattening the metal thermal expansion space.

[0054] XXXIII) In the above XXVIII) to XXXII), the structure flattening device of the hybrid bonding may additionally include a DW cleaning module.

[0055] XXXIV) In the above XXVIII) to XXXIII), the DW cleaning module can be operated after the etching cleaning module.

[0056] XXXV) In the above XXVIII) to XXXIV), the etching cleaning module may be a pad module or a brush module.

[0057] XXXVI) In the above XXVIII) to XXXV), the DW cleaning module may be a brush module.

[0058] XXXVII) In the above XXVIII) to XXXVI), the structure planarization device of the hybrid bonding may be composed of a first CMP module, a second CMP module, and an etching cleaning pad module.

[0059] XXXVIII) In the above XXVIII) to XXXVII), the first CMP module, the second CMP module, and the etching cleaning pad module can be configured in a continuous or batch manner.

[0060] XXXIX) In the above XXVIII) to XXXVIII), the structure planarization device of the hybrid bonding may be composed of a first CMP module, a second CMP module, a third CMP module, and an etching cleaning brush module.

[0061] XL) In the above XXVIII) to XXXIX), the first CMP module, the second CMP module, the third CMP module and the etch cleaning brush module can be configured in a continuous or batch manner.

[0062] XLI) In the above XXVIII) to XL), the structure planarization device of the hybrid bonding may be composed of a first CMP module, a second CMP module, an etching cleaning pad module, and an etching cleaning brush module.

[0063] XLII) In the above XXVIII) to XLI), the first CMP module, the second CMP module, the etching cleaning pad module, and the etching cleaning brush module can be configured in a continuous or batch manner.

[0064] XLIII) In the above XXVIII) to XLII), the structure planarization device of the hybrid bonding may be composed of a first CMP module, a second CMP module, an etching cleaning pad module, and a DW cleaning brush module.

[0065] XLIV) In the above XXVIII) to XLIII), the first CMP module, the second CMP module, the etch cleaning pad module, and the DW cleaning brush module can be configured in a continuous or batch manner.

[0066] XLV) In the above XXVIII) to XLIV), the structure flattening device of the hybrid bonding may include a pulse mode, a pre-bonding device, and a thermal expansion device.

[0067] According to the present invention, compared to a conventional hybrid bonding structure planarization technique using a CMP process to remove a metal layer and a barrier layer on a non-recessed area, the metal layer and the barrier layer on the non-recessed area are removed, and the metal layer is only maintained flat in the via, thereby improving the metal layer dishing uniformity, reducing metal resistance, and reducing the process cost by performing a chemical treatment in parallel without using a precision device.

[0068] FIG. 1 is a cross-sectional view exemplarily showing a hybrid bonding structure before performing a flattening process according to one embodiment of the present invention.

[0069] FIG. 2 is a cross-sectional view showing a flattened hybrid bonding structure according to one embodiment of the present invention.

[0070] Figure 3 is a cross-sectional view showing a rounding phenomenon according to a structural flattening process of hybrid bonding according to a conventional technology and a void generated during hybrid bonding.

[0071] Figure 4 is a flowchart showing four examples of a structural flattening process of hybrid bonding according to the present invention.

[0072] FIG. 5 is a schematic diagram and flow chart showing the operation of the hybrid bonding structure flattening device according to the present invention for each of the four embodiments of FIG. 4, and also briefly showing the flattening structure change at each stage.

[0073] The present invention will be described in detail with reference to the drawings below, but the present invention is not limited thereto.

[0074] The term "hybrid bonding product" used in the present invention refers to a semiconductor product or display product, etc., on which a hybrid bonding process is subsequently performed, unless otherwise specified.

[0075] The term "etching cleaning composition" used in the present invention, unless otherwise specified, refers to a composition capable of simultaneously performing etching cleaning on a semiconductor product or display product, etc., to which a hybrid bonding process is subsequently performed, but is not limited to use solely for the etching process or cleaning process.

[0076] The term “oxide layer” used in the present invention refers to a dielectric unless otherwise specified.

[0077] The present inventors, while studying a method for planarizing a hybrid bonding structure and a device for planarizing a hybrid bonding structure that can simultaneously remove polishing residues existing on the surface of an oxide film and a metal layer while forming a recess necessary for a hybrid bonding process between joints during a semiconductor and display manufacturing process in an appropriate shape without a rounding phenomenon due to over-polishing of an oxide film, confirmed that all of the above-mentioned objectives can be achieved when a planarization process and a planarization device are designed while using a slurry of a specific composition and an etching cleaning solution composition in combination, and completed the present invention based on this.

[0078] The process sequence for forming a hybrid bonding structure may generally include the following steps:

[0079] Silicon is selected as the material of the substrate (101), a via (102) is formed in the substrate (101) by etching, silicon dioxide or SiCN is selected as the material of the oxide layer (103), the oxide layer (103) is deposited on the substrate (101) by chemical vapor deposition (CVD), titanium is selected as the material of the barrier layer (104), the barrier layer (104) is deposited on the oxide layer (103) and the lower and side walls of the via (102) by physical vapor deposition (PVD), and copper is selected as the material of the metal layer (105), and the metal layer (105) is deposited on the via (102) by electrochemical plating.

[0080] Since the via (102) of the hybrid bonding structure has a high aspect ratio, a thick over-deposited metal layer (105) is deposited on the barrier layer (104) by electrochemical plating to deposit the metal layer (105) within the via (102) without voids. As illustrated in FIG. 1 below, the hybrid bonding structure is illustrated before performing the planarization process.

[0081] The thickness of the metal layer (105) deposited on the non-recessed area may be typically about 0.5 to 5 um, but is not limited thereto and may vary depending on the intended use.

[0082] After depositing the metal layer (105) within the via (102) and on the non-recessed area, the subsequent step is to remove the metal layer (105) and the barrier layer (104) deposited on the non-recessed area.

[0083] A planarization process of a hybrid bonding structure for removing a metal layer (105) and a barrier layer (104) formed on a non-recessed region according to one embodiment of the present invention may include the following steps.

[0084] Step 1: A step of removing the metal layer (105) formed on the non-recessed area of ​​the substrate by a chemical mechanical polishing (CMP) process.

[0085] The above metal layer (105) may be all of the metal layer formed on the non-recessed area and some of the metal layer formed within the via (102).

[0086] The chemicals for the above CMP process may vary depending on the P1, P2, and P3 processes. For P1, a slurry with a high Cu polishing rate is applied to remove the metal layer (105) formed on the non-recessed area. For the P2 and P3 processes, a slurry with a Cu:Ox selectivity of 1:1 is applied.

[0087] The substrate is fixed on the head and rotates along with the chuck. The platen at the bottom of the CMP rotates in the same direction. The barrier layer can be effectively removed at a spin speed of, for example, 40 to 90 RPM.

[0088] Step 2: A step of removing the metal layer residue, oxide layer, and barrier layer formed on the non-recessed region. The thickness of the barrier layer (104) on the non-recessed region is approximately 1 to 15 nm, but may vary depending on the process.

[0089] The material of the barrier layer (104) may include, but is not limited to, one or more selected from Ti, TiN, Ta, and TaN. In addition, the chemical substance for removing the barrier layer may be performed using a slurry in which the selectivity ratio for the polishing speed of the oxide layer and the metal layer is adjusted to 1:1.

[0090] After the barrier layer (104) on the non-recessed area is removed, the oxide layer (103) under the barrier layer (104) is exposed.

[0091] The material of the above oxide layer (103) may include at least one selected from Si, SiO2, and SiCN, but is not limited thereto. In addition, the thickness of the above oxide layer (103) is approximately 0.01 to 1 um, but this may also vary depending on the process.

[0092] A slurry for removing a barrier layer may include abrasive particles, a corrosion inhibitor, a complexing agent, and an oxidizing agent, and the slurry may include 0.05 to 5 wt% of silica particles, 0.001 to 1 wt% of an azole corrosion inhibitor containing one or more N groups, 0.001 to 0.5 wt% of an amino acid complexing agent, and 0.05 to 1 wt% of an oxidizing agent, in which case the barrier layer can be effectively removed.

[0093] The substrate is fixed on the head and rotates along with the chuck. The platen at the bottom of the CMP rotates in the same direction. The barrier layer can be effectively removed at a spin speed of, for example, 40 to 90 RPM.

[0094] Step 3: A step of leveling the metal layer and oxide layer formed within the via.

[0095] The slurry for planarizing the metal layer (105) formed within the via, particularly the upper metal layer thereof, may include abrasive particles, a corrosion inhibitor, a complexing agent, and an oxidizing agent, and the slurry may include 0.05 to 5 wt% of silica particles, 0.001 to 1 wt% of an azole corrosion inhibitor containing one or more N groups, 0.001 to 0.5 wt% of an amino acid-based complexing agent, and 0.05 to 1 wt% of an oxidizing agent, in which case the metal layer can be effectively planarized.

[0096] In order to realize a flat upper surface, the step difference of the metal layer (105) and the oxide layer within the via (102) can be recovered and planarization can be realized by a CMP process. Specifically, the metal layer (105) and the oxide layer are partially polished in the same manner to remove the step difference.

[0097] The roughness of the metal layer (105) within the via (102) can be recovered and planarization can be achieved through the above CMP process.

[0098] Typically, the upper removal thickness of the metal layer (105) may be 50 Å or less.

[0099] Step 4: A step of forming a flat metal thermal expansion space by removing the barrier layer formed on the lower part and side walls of the via.

[0100] In order to form a flat metal thermal expansion space while removing the barrier layer formed on the lower part and side walls of the above via, an etching cleaning process is preferably applied.

[0101] The chemical substance for the above etching cleaning process may be an etching cleaning solution composition.

[0102] The above etching cleaning solution composition is characterized in that it contains an etching agent; a metal corrosion inhibitor; a silicon film etching inhibitor; a basic compound containing a hydroxyl group; and an alkanol amine compound; and is a basic solution. In this case, the etching of the oxide film is suppressed, the rounding phenomenon due to over-polishing is suppressed, and the etching ability and cleaning ability are simultaneously improved, so that cleaning of polishing residues existing on the surface of the oxide film and the metal layer is possible.

[0103] Specifically, in the etching cleaning solution composition of the present invention, the etching agent may be a compound that contains a carboxyl group and performs the function of selectively etching copper or titanium.

[0104] The above etching agent may be a compound that selectively etches copper or titanium, including a carboxyl group.

[0105] The above etching species may be, for example, at least one selected from asparagine, ammonium citrate, glycine, arginine, histidine, lysine, alanine, citric acid, aspartic acid, and glutamic acid, and specific examples thereof may include ammonium citrate, citric acid, and the like.

[0106] The above metal corrosion inhibitor may be a compound that contains a functional group with a high reducing power and prevents corrosion of copper or titanium.

[0107] The above silicon film etching inhibitor may be a sulfonic acid group-containing compound that prevents etching of silicon-based oxide films such as silicon, silicon oxide, silicon nitride, and silicon carbon nitride.

[0108] The basic compound containing the above hydroxyl group may be a compound that adjusts the pH of the etching cleaning solution composition to 8 or higher.

[0109] The above etching species may be at least one selected from asparagine, ammonium citrate, glycine, arginine, histidine, lysine, alanine, citric acid, aspartic acid, and glutamic acid.

[0110] The above etching agent may be included in an amount of, for example, 0.1 to 10 wt% based on the total weight of the etching cleaning solution composition, and in a specific example, may be included in an amount of 1 to 10 wt%.

[0111] The above metal corrosion inhibitor may be at least one selected from gallic acid, mercaptosuccinic acid, resorcinol, uric acid, vanillic acid, fructose, kojic acid, 5-aminosalicylic acid, and dextrose.

[0112] The above metal corrosion inhibitor may be included in an amount of 0.1 to 10 wt% based on the total weight of the etching cleaning solution composition.

[0113] The above silicon film etching inhibitor may be at least one selected from benzenesulfonic acid, sulfamic acid, 2,4-dimethylbenzenesulfonic acid, 4-hydroxypyridine-3-sulfonic acid, p-toluenesulfonic acid, ammonium sulfamate, and methane sulfonic acid.

[0114] The above silicon film etching inhibitor may be included in an amount of 0.001 to 30 wt% based on the total weight of the etching cleaning solution composition.

[0115] The basic compound containing the above hydroxyl group may be at least one selected from tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrabutylammonium hydroxide, ammonium hydroxide, choline hydroxide, sodium hydroxide, and potassium hydroxide.

[0116] The basic compound containing the above hydroxyl group may be included in an amount of 1 to 25 wt% based on the total weight of the etching cleaning solution composition.

[0117] The above alkanol amine compound may be at least one selected from propanolamine, ethanolamine, diethanolamine, triethanolamine, 2-2-(ethylamino)ethanol, 1-amino-2-propanol, 2-(methylamino)ethanol, N,N-dimethylethanolamine, 1,3-diamino-2-propanol, 2-amino-1,3-propanediol, and 2-amino-2-methyl-1-propanol.

[0118] The above alkanol amine compound may be included in an amount of 0.1 to 10 wt% based on the total weight of the etching cleaning solution composition.

[0119] The above etching cleaning solution composition may include a surfactant.

[0120] The above surfactant may be at least one selected from a nonionic surfactant and an anionic surfactant.

[0121] The above surfactant may be included in an amount ranging from 0.001 to 3 wt% based on the total weight of the etchant cleaning solution composition.

[0122] In the etching cleaning composition of the present invention, the etching species may be included in an amount of, for example, 0.1 to 10 wt%, specifically 1 to 10 wt%, and preferably 1 to 5 wt%, based on the total weight of the etching cleaning composition. In this case, the etching of the oxide film is suppressed, thereby suppressing the rounding phenomenon caused by over-polishing, and the etching ability and cleaning ability are simultaneously improved, thereby enabling cleaning of polishing residues existing on the surface of the oxide film and the metal layer, and providing the effect of implementing excellent bonding strength in the hybrid bonding process, while not adversely affecting the etching cleaning composition, thereby providing a recess in an appropriate shape at the joint required for hybrid bonding.

[0123] In the etching cleaning solution composition of the present invention, the metal corrosion inhibitor may be a compound that contains a functional group with a high reducing power and serves to prevent corrosion of copper or titanium.

[0124] The metal corrosion inhibitor may be, for example, at least one selected from gallic acid, mercaptosuccinic acid, resorcinol, uric acid, vanillic acid, fructose, kojic acid, 5-aminosalicylic acid, and dextrose, and specific examples thereof may include uric acid, ascorbic acid, and the like.

[0125] The metal corrosion inhibitor may be included in an amount of, for example, 0.1 to 10 wt%, specifically 0.1 to 5 wt%, and preferably 0.1 to 3 wt%, based on the total weight of the etching cleaning composition. In this case, the etching of the oxide film is suppressed, thereby suppressing the rounding phenomenon caused by over-polishing, and the etching ability and cleaning ability are simultaneously improved, enabling cleaning of polishing residues existing on the surface of the oxide film and the metal layer, and providing an effect of implementing excellent bonding strength in the hybrid bonding process, while not adversely affecting the etching cleaning composition, thereby providing a recess in an appropriate shape at the joint required for hybrid bonding.

[0126] In the etching cleaning solution composition of the present invention, the silicon film etching inhibitor may be a compound that contains a sulfonic acid group and serves to prevent etching of the silicon film.

[0127] The above-mentioned silicon film etching inhibitor may be, for example, at least one selected from benzenesulfonic acid, sulfamic acid, 2,4-dimethylbenzenesulfonic acid, 4-hydroxypyridine-3-sulfonic acid, p-toluenesulfonic acid, ammonium sulfamate, and methanesulfonic acid, and a specific example thereof may be methanesulfonic acid, but is not limited thereto.

[0128] The above-mentioned silicon film etching inhibitor may be included in an amount of, for example, 0.001 to 30 wt%, specifically 0.1 to 5 wt%, and preferably 0.1 to 3 wt%, based on the total weight of the etching cleaning composition. In this case, the etching ability and cleaning ability are simultaneously improved, so that polishing residues existing on the surface of the oxide film and the metal layer can be cleaned, and the etching of the oxide film can be suppressed without adversely affecting the etching cleaning composition, which provides the effect of implementing excellent bonding strength in the hybrid bonding process, thereby preventing the occurrence of a rounding phenomenon due to over-polishing.

[0129] The above silicon film may be, for example, a silicon-based oxide film such as silicon, silicon oxide, silicon nitride, or silicon carbon nitride.

[0130] In the etching cleaning composition of the present invention, the basic compound containing the hydroxyl group may be a compound that adjusts the pH of the etching cleaning composition to 8 or higher.

[0131] The basic compound containing the above hydroxyl group may be, for example, at least one selected from tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrabutylammonium hydroxide, ammonium hydroxide, choline hydroxide, sodium hydroxide, and potassium hydroxide, and specific examples thereof may include tetramethylammonium hydroxide, tetraethylammonium hydroxide, and the like.

[0132] The basic compound containing the above hydroxyl group may be included in an amount of, for example, 1 to 25 wt%, specifically 5 to 20 wt%, and preferably 8 to 20 wt%, based on the total weight of the etching cleaning composition. In this case, the etching of the oxide film is suppressed, thereby suppressing the rounding phenomenon caused by over-polishing, and the etching ability and cleaning ability are simultaneously improved, enabling cleaning of polishing residues existing on the surface of the oxide film and the metal layer, and providing the effect of implementing excellent bonding strength in the hybrid bonding process. The disadvantage of copper being over-etched when the pH is neutral or acidic can be resolved without adversely affecting the etching cleaning composition.

[0133] In the etching cleaning solution composition of the present invention, the alkanol amine compound can play a role in decomposing polishing residues present on the surface of the oxide film and metal layer.

[0134] For reference, the above alkanol amines are commonly used as pH adjusters in this technical field, but in the case of the present invention, as described above, when the pH is neutral or acidic, copper over-etching occurs, and thus the composition is characterized by being configured in a more basic environment than this. In particular, even if an excessive amount of alkanol amine is added, it is difficult to provide a strongly basic environment of pH 12 or higher and 14 or lower as required by the present invention.

[0135] The above alkanol amine compound may be at least one selected from, for example, propanolamine, ethanolamine, diethanolamine, triethanolamine, 2-2-(ethylamino)ethanol, 1-amino-2-propanol, 2-(methylamino)ethanol, N,N-dimethylethanolamine, 1,3-diamino-2-propanol, 2-amino-1,3-propanediol, and 2-amino-2-methyl-1-propanol, and a specific example may be ethanolamine.

[0136] The above alkanol amine compound may be included in an amount of, for example, 0.1 to 10 wt%, specifically 1 to 10 wt%, and preferably 3 to 8 wt%, based on the total weight of the etching cleaning composition. In this case, the etching cleaning composition suppresses the etching of the oxide film, thereby suppressing the rounding phenomenon caused by over-polishing, simultaneously improving the etching ability and cleaning ability, and providing the effect of implementing excellent bonding strength in a hybrid bonding process, while efficiently cleaning polishing residues existing on the surface of the oxide film and the metal layer without adversely affecting the etching cleaning composition.

[0137] The material being cleaned at this time may include the abrasive used in polishing, pad debris, and various residues that may be generated during the process.

[0138] At this time, various materials known in this technical field can be used as abrasives, such as silica and ceria.

[0139] Additionally, the oxide film may be, for example, silicon, silicon oxide, silicon nitride, silicon carbon nitride, etc.

[0140] The above etching cleaning solution composition may further include a surfactant.

[0141] The above surfactant may be at least one selected from a nonionic surfactant and an anionic surfactant.

[0142] Here, the nonionic surfactant may be, for example, a copolymer including polyethylene glycol, polypropylene glycol, polyoxyethylene oxide, polyalkyl oxide, polyethylene oxide, polyoxyethylene sorbitol hexaoleate, polyoxyethylene sorbitol tetraoleate, polyoxyethylene lauryl ether, polyoxyethylene octylphenyl ether, dodecenylsuccinic acid monodiethanol amide, alkylpolyglucoside; or Dow's TERGITOL™ TMN-6, TERGITOL™ 15-S-5, TERGITOL™ NP-40, etc.

[0143] The anionic surfactant may be, for example, a copolymer including alkyl ether phosphate, aryl ether phosphate, ammonium lauryl sulfate, sodium dodecyl benzene sulfonate, ammonium dodecyl benzene sulfonate, sodium polyoxyethylene alkyl aryl sulfate, ammonium polyoxyethylene alkyl sulfate, disodium laureth sulfosuccinate, sodium lauryl polyoxyethylene ether sulfate; or Dow's TERGITOL™ W-610, TRITON™ H-11, TRITON™ DF-20, etc.

[0144] The surfactant may be included in an amount of, for example, 0.001 to 3 wt%, specifically 0.001 to 1 wt%, and preferably 0.001 to 0.02 wt%, based on the total weight of the etching cleaning composition. In this case, polishing residues present on the oxide film and the metal layer surface can be efficiently cleaned without adversely affecting the provided etching cleaning composition.

[0145] The pH of the etching cleaning solution composition may be, for example, in the range of 8 to 14, specifically in the range of 9 to 14, and preferably in the range of about 12 to 14. In this case, the etching cleaning solution composition can suppress the etching of the oxide film, suppress the rounding phenomenon due to over-polishing, improve both the etching ability and the cleaning ability, and provide the effect of implementing excellent bonding strength in a hybrid bonding process, while simultaneously providing the effect of efficiently cleaning polishing residues existing on the surface of the oxide film and the metal layer without adversely affecting the effect.

[0146] The pH of the above etching cleaning solution composition may be in the range of 8 to 14.

[0147] The fourth step may be performed by chemical immersion or physical scrubbing.

[0148] The above etching cleaning composition can planarize the metal layer contained in the via by etching it at an etching rate of 50 Å / min or less.

[0149] The above etching cleaning composition can remove polishing residues present on the surface of the oxide layer and metal layer.

[0150] The above hybrid bonding structure planarization process can be performed continuously and / or batchwise by performing the step of activating the surface in a pulse mode after the fourth step; the step of pre-bonding the die and the wafer; and the step of densely bonding the bonding structure between the die and the wafer through thermal expansion.

[0151] For example, the shape of the above joint is shown in Fig. 2 below.

[0152] The following Figure 2 is a drawing showing a structure in which a recess is formed without a rounding phenomenon of an oxide film in a hybrid bonding component when an etching cleaning composition according to an embodiment of the present invention is used in a chemical mechanical planarization or polishing (CMP) process, and the following Figures 1 and 3 are drawings showing a rounding phenomenon observed due to overpolishing of an oxide film when a slurry composition according to a prior art is used in a CMP process.

[0153] When an aqueous solution having a pH of 7.6 containing 0.5 wt% of silica particles, 0.01 wt% of BTA (a corrosion inhibitor, benzotriazole), 0.005 wt% of maleic acid, 0.05 wt% of hydrogen peroxide, and the remainder of water is used as a slurry composition according to the above-mentioned prior art, the copper polishing rate is 52 Å / min, and the TEOS (tetraethyl ortho-silicate) polishing rate is 213 Å / min, so that the Cu / TEOS selectivity reaches 1:5, and as a result, the shape of the Cu via is a protrusion.

[0154] As another example, when using an aqueous solution having a pH of 7.6 containing B) 0.5 wt% of silica particles, 0.01 wt% of BTA, 0.005 wt% of maleic acid, 1.0 wt% of hydrogen peroxide, and the remainder of water as a slurry composition according to the prior art, the copper polishing rate is 617 Å / min, the TEOS polishing rate is 217 Å / min, and the Cu / TEOS selectivity reaches 3:1, so that dishing occurs in the shape of the resulting Cu via.

[0155] As shown in Figures 1 and 3 below, if a rounding phenomenon is observed, it is difficult to provide complete bonding strength between joints in the hybrid bonding process, which is an essential subsequent process.

[0156] Therefore, when the etching cleaning solution composition of the present invention is used, uniform dishing of a metal layer for hybrid bonding can be created.

[0157] Here, the selective etching content of the metal layer can be controlled in angstrom units by controlling the composition content, dilution ratio, and process time.

[0158] The above etching cleaning solution composition can be charged using a pad, a brush, or both. For example, (a) of FIG. 5 below is a drawing using a pad, (b) is a drawing using a brush, and (c) is a drawing using a brush after using a pad.

[0159] A DW cleaning step can be added after the above etching cleaning. As an example, (d) of the following Figure 5 is a drawing in which the above etching cleaning solution composition is applied using a pad and then DW cleaning is performed using a brush.

[0160] The above metal thermal expansion space may be a metal layer having a depth of, for example, 100 Å or less, preferably 50 Å or less from the top, and may provide a resulting flat rectangular structure.

[0161] The above metal thermal expansion space is most preferably the width of the via (102), and may be, for example, 5 um or less, preferably 0.5 to 5 um, but this may also vary depending on the process.

[0162] The substrate is fixed on the head and rotates together with the chuck. The platen at the bottom of the CMP rotates in the same direction. The spin speed can effectively remove the barrier layer when it is, for example, 40 RPM to 90 RPM. The substrate spin speed can effectively form a metal thermal expansion space when it is, for example, 40 RPM to 90 RPM. The removal profile is related to the spin speed. A higher spin speed can lead to a higher substrate edge removal rate, and a lower spin speed can lead to a lower substrate edge removal rate.

[0163] The etching cleaning solution composition supply nozzle can move during the process. The etching cleaning speed is affected by the nozzle scan speed and scan area. The optimal scan speed may be 100 mm / sec or less, and specifically, 40 mm / sec to 100 mm / sec.

[0164] A structure planarization device for hybrid bonding according to the present invention includes an Equipment Front End Module (EFEM), a buffer station, a process robot, two or more stacked CMP modules (1001), a measurement module, a pad module (1007), a brush module (1009), an etch cleaning module (1003), and a DW cleaning module (1005). The measurement module, the pad module (1007), and the brush module (1009) may be stacked on the etch cleaning module (1003) and / or the DW cleaning module (1005) or may be operated simultaneously.

[0165] The device also includes an electrical module, a gas module and a piping module.

[0166] The CMP module (1001) is used to apply a chemical mechanical polishing process to the substrate to remove a metal layer on a non-recessed area of ​​the substrate. Among the two or more CMP modules (1001), a second or more module can be used to planarize a step difference between the metal layer and the oxide layer formed within the via using a slurry in which the selectivity ratio for polishing speeds of the oxide layer and the metal layer is adjusted to 1:1.

[0167] The above etching cleaning module can be used to form a flat metal thermal expansion space by filling a recessed area of ​​the substrate with an etching cleaning composition and removing a barrier layer formed on the lower part and side walls of the via.

[0168] The above hybrid bonding structure planarization device may additionally include a DW cleaning module.

[0169] The above DW cleaning module can be operated after the etch cleaning module.

[0170] The above etching cleaning module may be a pad module or a brush module.

[0171] The above DW cleaning module may be a brush module.

[0172] According to one embodiment of the present invention, the structure planarization device of the hybrid bonding may be composed of a first CMP module, a second CMP module, and an etching cleaning pad module, as shown in FIGS. 4a and 5a below.

[0173] Here, the first CMP module, the second CMP module, and the etch cleaning pad module can be configured in a continuous or batch manner, and a continuous manner is preferable in terms of process efficiency, and FIG. 5a corresponds to a continuous operation.

[0174] The above first CMP module (1001) performed the work of removing the metal layer (Cu) and matching the step between the metal layer and the oxide film layer (Cu / Ox).

[0175] Among the two or more CMP modules (1001) described above, the second or more modules can simultaneously perform steps (b) and (c) shown in FIG. 5a for 60 seconds using slurry having a 1:1 selectivity ratio supplied through a slurry supply nozzle. At this time, the operating time may be in the range of 20 to 100 seconds.

[0176] For example, when the slurry having the above 1:1 selectivity is an aqueous solution having a pH of 7.6 containing C) 0.5 wt% silica particles, 0.01 wt% BTA, 0.008 wt% maleic acid, 0.35 wt% hydrogen peroxide, and the remainder water, the copper polishing rate is 208 Å / min, and the TEOS polishing rate is 217 Å / min, realizing a Cu / TEOS selectivity of approximately 1:1. As a result, the shape of the Cu via is confirmed to have a consistent step, and the actually measured roughness is confirmed to be approximately 1.4 Å.

[0177] Then, the etching cleaning module (1003) can overlap with the pad module (1007) and perform step (d) shown in FIG. 5a below for 60 seconds using an etching cleaning solution composition supplied from an etching cleaning solution supply nozzle. At this time, the composition described above is used as the etching cleaning solution composition, and the operation time can be in the range of 20 to 100 seconds.

[0178] As a result, it was confirmed that the substrate that underwent the planarization process using the above-mentioned planarization device implemented a structure having a planarization metal thermal expansion space as shown in Fig. 2 according to the flow chart also shown in Fig. 5a. For example, the horizontal width of the metal thermal expansion space in the via was 1.5 ㎛, and the vertical depth was 50 Å from the top edge virtually drawn from the oxide layer, but the present invention is not limited thereto.

[0179] According to another embodiment of the present invention, the structure planarization device of the hybrid bonding may be composed of a first CMP module, a second CMP module, a third CMP module, and an etching cleaning brush module, as shown in FIGS. 4b and 5b below.

[0180] Here, the first CMP module, the second CMP module, the third CMP module, and the etch cleaning brush module can be configured in a continuous or batch manner, and a continuous manner is preferable in terms of process efficiency, and FIG. 5b corresponds to a continuous operation.

[0181] The above first CMP module (1001) performed the work of removing the metal layer (Cu) and matching the step between the metal layer and the oxide film layer (Cu / Ox).

[0182] Among the two or more CMP modules (1001) described above, the second or more modules (corresponding to the second CMP module and the third CMP module in FIG. 5) can sequentially perform steps (b) and (c) shown in FIG. 5b for 60 seconds each using slurry having a 1:1 selectivity ratio supplied through a slurry supply nozzle. At this time, the operating time can be in the range of 20 to 100 seconds.

[0183] Then, the etching cleaning module (1003) can be overlapped with the brush module (1009) and perform step (d) shown in FIG. 5b below for 60 seconds using an etching cleaning solution composition from an etching cleaning solution supply nozzle. At this time, the composition described above is used as the etching cleaning solution composition, and the operating time can be in the range of 20 to 100 seconds.

[0184] As a result, it was confirmed that the substrate that underwent the planarization process using the above-mentioned planarization device implemented a structure having a planarization metal thermal expansion space as shown in Fig. 2 according to the flow chart also shown in Fig. 5b. Specifically, the horizontal width of the metal thermal expansion space in the via was 1.5 ㎛, and the vertical depth was 50 Å from the top edge virtually drawn from the oxide layer.

[0185] According to another embodiment of the present invention, the structure planarization device of the hybrid bonding may be composed of a first CMP module, a second CMP module, an etching cleaning pad module, and an etching cleaning brush module, as shown in FIGS. 4c and 5c below.

[0186] Here, the first CMP module, the second CMP module, the etching cleaning pad module, and the etching cleaning brush module can be configured in a continuous or batch manner, and a continuous manner is preferable in terms of process efficiency, and FIG. 5c corresponds to a continuous operation.

[0187] The above first CMP module (1001) performed the work of removing the metal layer (Cu) and matching the step between the metal layer and the oxide film layer (Cu / Ox).

[0188] The above second CMP module (1001) can simultaneously perform steps (b) and (c) shown in FIG. 5c for 60 seconds using slurry having a 1:1 selectivity ratio supplied through a slurry supply nozzle. At this time, the operating time can be in the range of 20 to 100 seconds.

[0189] Then, the etching cleaning module (1003) overlaps with the pad module (1007) and the brush module (1009) and can sequentially perform step (d) shown in FIG. 5c below for 60 seconds using an etching cleaning solution composition from an etching cleaning solution supply nozzle. At this time, the composition described above is used as the etching cleaning solution composition, and the operating time can be in the range of 20 to 100 seconds.

[0190] As a result, it was confirmed that the substrate that underwent the planarization process using the above-mentioned planarization device implemented a structure having a planarization metal thermal expansion space as shown in Fig. 2 according to the flow chart also shown in Fig. 5c. Specifically, the horizontal width of the metal thermal expansion space within the via was 1.5 ㎛, and the vertical depth was 50 Å from the top edge virtually drawn from the oxide layer.

[0191] According to one embodiment of the present invention, the structure planarization device of the hybrid bonding may be composed of a first CMP module, a second CMP module, an etching cleaning pad module, and a DW cleaning brush module, as shown in FIGS. 4d and 5d below.

[0192] Here, the first CMP module, the second CMP module, the pad module for etch cleaning, and the brush module for DW cleaning can be configured in a continuous or batch manner, and a continuous manner is preferable in terms of process efficiency, and FIG. 5d corresponds to a continuous operation.

[0193] The above first CMP module (1001) performed the work of removing the metal layer (Cu) and matching the step between the metal layer and the oxide film layer (Cu / Ox).

[0194] The above second CMP module (1001) can simultaneously perform steps (b) and (c) shown in FIG. 5d for 60 seconds using slurry having a 1:1 selectivity ratio supplied through a slurry supply nozzle. At this time, the operating time can be in the range of 20 to 100 seconds.

[0195] Then, the etching cleaning module (1003) overlaps with the pad module (1007) and sequentially performs step (d) shown in FIG. 5d for 60 seconds using an etching cleaning solution composition supplied from an etching cleaning solution supply nozzle. At this time, the composition described above is used as the etching cleaning solution composition, and the operating time may be in the range of 20 to 100 seconds.

[0196] Next, the DW cleaning module (1005) overlaps with the brush module (1009) and can sequentially perform step (e) shown in FIG. 5d for 60 seconds using deionized water supplied from the DW (deionized water) supply nozzle. At this time, the operation time can be performed for 10 to 60 seconds, respectively.

[0197] As a result, it was confirmed that the substrate that underwent the planarization process using the above-mentioned planarization device implemented a structure having a planarization metal thermal expansion space as shown in Fig. 2 according to the flow chart also shown in Fig. 5d. Specifically, the horizontal width of the metal thermal expansion space in the via was 1.5 ㎛, and the vertical depth was 50 Å from the top edge virtually drawn from the oxide layer.

[0198] The above hybrid bonding structure planarization device can be connected to a pulse mode, a pre-bonding device, and a thermal expansion device to perform a post-process of hybrid bonding.

[0199] The substrate transfer sequence in the flattening device of Figure 5 (left drawings of 5a, 5b, 5c, and 5d) is explained as follows.

[0200] The EFEM robot picks up an unprocessed substrate from the loading unit and transports it to a buffer station. The process robot picks up the substrate from the buffer station and transports it to a measurement module for measuring the thickness of the metal layer. After the measurement module measures the thickness of the metal layer, the process robot picks up the substrate from the measurement module and transports it to one of the CMP modules (1001). In the CMP module (1001), a CMP process is applied to the substrate to remove all the metal layer on the non-recessed area and some of the upper metal layer within the via. After the CMP process is completed, the process robot takes the substrate from the CMP module (1001) and transports it to a second CMP module (1001). In the second CMP module (1001), a CMP process is applied to the substrate while receiving slurry from a slurry supply nozzle to remove the barrier layer and the oxide layer on the non-recessed area and planarize the metal layer within the via (same as (a), (b), (c), and (d) of FIG. 5 below).

[0201] Then, as shown in (a) of the following Figure 5, after the second CMP process is completed, the process robot takes the substrate from the second CMP module (1001) and transfers it to the etching cleaning pad module (1007). The etching cleaning pad module (1007) receives an etching cleaning composition from an etching cleaning composition supply nozzle, and applies an etching cleaning process to the substrate to remove the sidewall and lower barrier layer of the via, and at the same time, form a flattened metal thermal expansion space on the upper portion of the metal layer within the via.

[0202] The process robot then takes the substrate from the etch cleaning pad module (1007) and transfers the substrate to the buffer station. Finally, the EFEM robot picks up the substrate from the buffer station and transfers the substrate back to the substrate loading unit.

[0203] According to another embodiment, as shown in (b) of the following FIG. 5, after the second CMP process is completed, the process robot takes the substrate from the second CMP module (1001) and transfers it to the third CMP module (1001). While the third CMP module (1001) supplies slurry from the slurry supply nozzle, the CMP process is applied to the substrate, thereby removing the barrier layer and oxide layer on the non-recessed area and further planarizing the metal layer within the via.

[0204] After the third CMP process is completed, the process robot takes the substrate from the second CMP module (1001) and transfers it to the etching cleaning brush module (1009). The etching cleaning brush module (1009) receives an etching cleaning composition from an etching cleaning composition supply nozzle, and applies an etching cleaning process to the substrate to remove the sidewall and lower barrier layer of the via, while forming a flattened metal thermal expansion space on the upper portion of the metal layer within the via.

[0205] The process robot then takes the substrate from the etch cleaning brush module (1009) and transfers the substrate to the buffer station. Finally, the EFEM robot picks up the substrate from the buffer station and transfers the substrate back to the substrate loading unit.

[0206] According to another embodiment, as shown in (c) of the following FIG. 5, after the second CMP process is completed, the process robot takes the substrate from the second CMP module (1001) and transfers it to the etching cleaning pad module (1007). The etching cleaning pad module (1007) receives an etching cleaning composition from an etching cleaning composition supply nozzle, and applies an etching cleaning process to the substrate to remove the sidewall and lower barrier layer of the via, and at the same time, form a flattened metal thermal expansion space on the upper portion of the metal layer within the via.

[0207] Then, the process robot takes the substrate from the etching cleaning pad module (1007) and transfers it to the etching cleaning brush module (1009). The etching cleaning brush module (1009) receives an etching cleaning composition from an etching cleaning composition supply nozzle, and applies an etching cleaning process to the substrate, thereby removing the sidewall and lower barrier layer of the via and forming a flattened metal thermal expansion space on the upper portion of the metal layer within the via.

[0208] The process robot then takes the substrate from the etch cleaning brush module (1009) and transfers the substrate to the buffer station. Finally, the EFEM robot picks up the substrate from the buffer station and transfers the substrate back to the substrate loading unit.

[0209] According to another embodiment, as shown in (d) of the following FIG. 5, after the second CMP process is completed, the process robot takes the substrate from the second CMP module (1001) and transfers it to the etching cleaning pad module (1007). The etching cleaning pad module (1007) receives an etching cleaning composition from an etching cleaning composition supply nozzle, and applies an etching cleaning process to the substrate to remove the sidewall and lower barrier layer of the via, and at the same time, form a flattened metal thermal expansion space on the upper portion of the metal layer within the via.

[0210] The process robot then takes the substrate from the etch cleaning pad module (1007) and transfers it to the DW cleaning module (1005). The DW cleaning module (1005) fills the DW into the metal layer thermal expansion space within the via, thereby cleaning the substrate while assisting in forming a more flat space.

[0211] The process robot then takes the substrate from the DW cleaning module (1005) and transfers the substrate to the buffer station. Finally, the EFEM robot picks up the substrate from the buffer station and transfers the substrate back to the substrate loading unit.

[0212]

[0213] In addition to the above substrate transfer sequence, other substrate transfer sequences can be performed according to different process requirements by using the device.

[0214] To achieve high-speed, uniform removal, it is desirable that the removal or polishing of the substrate material be comprised not of purely physical or purely chemical actions, but rather of a synergistic combination of both.

[0215] For this, any chemical immersion or physical scrubbing method commonly used in this technical field may be used, and since it is well known in the art, a detailed description thereof will be omitted.

[0216] In particular, as confirmed from the following examples, the etching effects obtained when applying the etching cleaning solution composition according to the present invention include providing an etching rate of 50 Å / min or less for a metal layer included in a semiconductor device or a display device, forming a joint recess on the metal layer with an appropriate thickness of 20 Å or less, and forming a surface roughness of a silicon film of 5 Å or less.

[0217] The cleaning effects obtained in this case include removing almost or completely 99% or more of the oxide film and polishing residue present on the surface of the metal layer included in the semiconductor element or display element.

[0218] Here, semiconductor devices refer to, but are not limited to, semiconductor memory devices such as DRAM, NAND, especially HBM (High bandwidth memory), GDDR (Graphic double data rate), etc.; system semiconductor devices such as CPU (Central Process Unit), AP (Application Processor), etc.; or heterojunction semiconductor devices thereof.

[0219] Additionally, the display element refers to, but is not limited to, an image sensor such as a CIS (CMOS image sensor).

[0220] Therefore, when using the hybrid bonding structure planarization method and device of the present invention, when forming a recess between joints required for hybrid bonding, it is possible to simultaneously remove polishing residues existing on the surface of the oxide film and the metal layer while suppressing the rounding phenomenon due to over-polishing of the oxide film, and to reduce process costs while improving the bonding strength of the hybrid bonding process.

[0221] In addition, in the case of conventional CMP slurry, it is difficult to control the selectivity for the polishing rate of the oxide film and Cu, so that it is impossible to control the appropriate dishing of the copper via. This is because, if the polishing rate of the oxide film is too fast compared to the polishing rate of the copper in terms of the selectivity between the oxide film and copper, the desired dishing of the copper via electrode cannot be formed, and thus the bonding process cannot be performed. Conversely, if the polishing rate of the copper is too fast, the dishing of the copper via electrode may be deep, and thus the bonding of the copper via electrode may not be formed when the bonding process is performed. These problems can be solved by using the hybrid bonding structure planarization method and device of the present invention.

[0222] Hereinafter, preferred examples are presented to help understand the present invention, but the following examples are only illustrative of the present invention, and it is obvious to those skilled in the art that various changes and modifications are possible within the scope and technical idea of ​​the present invention, and it is also natural that such changes and modifications fall within the scope of the appended patent claims.

[0223] Etching cleaning solution composition: Examples 1 to 10, Comparative Examples 1 to 9

[0224] Etching cleaning solution compositions used in Examples 1 to 10 and Comparative Examples 1 to 9 were each prepared.

[0225] Specifically, a hybrid bonding pre-etching cleaning solution having the composition shown in the table below was prepared according to the compositions shown in Tables 1, 2, 4, 5, and 6 below. After preparation, it was diluted in deionized water, and the ratio of deionized water to the preparation solution was 100:1. The temperature of each cleaning solution was 25°C.

[0226] Each compound was prepared in weight %, with the remainder containing water. In particular, tetraethylammonium hydroxide (TEAH), used as a pH adjuster, was added in different weight % to adjust the pH of all other preparations to be the same at pH 13, except for Comparative Example 7, which had a pH of 6, and Comparative Example 8, which had a pH of 11.5.

[0227] Using the above etching cleaning solution composition, it was evaluated whether the copper dishing of 10 nm and the rounding phenomenon of the silicon oxide film (SiO) and the copper electrode portion shown in FIGS. 4a to 4d and 5a to 5d were suppressed.

[0228] At this time, as a performance evaluation, the etching speed of copper, the etching speed of silicon oxide film, the change in roughness of silicon oxide film (before and after), the cleaning power of silica abrasive, and the cleaning power of organic residue were compared using the immersion and brush scrubbing methods, and each measurement method is as follows:

[0229] Copper etching rate

[0230] ((Thickness before copper evaluation) - (Thickness after copper evaluation)) / Evaluation time [Å / min]

[0231] The etching rate of copper was evaluated by measuring the thickness of copper using a surface resistance meter (AIT, CMT-SR5000).

[0232] (1) Cut the copper into 2 cm x 2 cm pieces and then perform pretreatment to remove the copper oxide film.

[0233] (2) The thickness before evaluation is measured using a surface resistance meter.

[0234] (3) After contacting the copper with each cleaning solution for a certain period of time by immersion or brush scrubbing, rinse with pure water and dry the surface using nitrogen gas.

[0235] (4) After evaluation, the copper thickness is measured using a surface resistance meter.

[0236] <Etching rate of silicon oxide film>

[0237] ((Thickness before silicon oxide film evaluation) - (Thickness after silicon oxide film evaluation)) / Evaluation time [Å / min]

[0238] The etching rate of the silicon oxide film was evaluated by measuring the thickness of the silicon oxide film using an ellipsometer (Ulamsa, M-2000).

[0239] (1) Cut the silicon oxide film into 2 cm x 2 cm pieces and then perform pretreatment to remove the natural oxide film.

[0240] (2) The thickness before evaluation is measured using an ellipsometer.

[0241] (3) After contacting each cleaning solution with the silicon oxide film for a certain period of time by immersion or brush scrubbing, rinse with pure water and dry the surface using nitrogen gas.

[0242] (4) After evaluation, the silicon oxide film thickness is measured using a surface resistance meter.

[0243] <Changes in the roughness of silicon oxide films>

[0244] (Roughness before silicon oxide film evaluation) - (Roughness after silicon oxide film evaluation)

[0245] < - 0.01 nm: Increased roughness

[0246] > + 0.01 nm: Reduced roughness

[0247] -0.01 ~ +0.01 nm: no change

[0248] The change in roughness of the silicon oxide film was analyzed using an atomic force microscope (Park Systems, XE15).

[0249] (1) Cut the silicon oxide film into 2 cm x 2 cm pieces and then perform pretreatment to remove the natural oxide film.

[0250] (2) The roughness before evaluation is measured using an atomic force microscope.

[0251] (3) After contacting each cleaning solution with the silicon oxide film for a certain period of time by immersion or brush scrubbing, rinse with pure water and dry the surface using nitrogen gas.

[0252] (4) After evaluation, the roughness of the silicon oxide film is measured using an atomic force microscope.

[0253] <Cleansing power of silica abrasive on copper>

[0254] (Silica abrasive area when contaminated with silica abrasive) - (Silica abrasive area after evaluation) / (Silica abrasive area when contaminated with silica abrasive) x 100 (%); PRE (Particle Removal Efficiency)

[0255] O: 99.5% or more, △: 99.0 to 99.5%, X: 99.0% or less

[0256] Silica abrasive present on the copper surface was analyzed using a scanning electron microscope (Hitachi, S4800).

[0257] (1) Cut the copper into 2 cm x 2 cm pieces and then pretreat.

[0258] (2) After simulating silica contamination by immersing in an abrasive containing silica abrasive, the area with silica abrasive is calculated using a program compared to the area analyzed using a scanning electron microscope.

[0259] (3) After leaving each cleaning solution in contact with the copper film for a certain period of time by immersion or brush scrubbing, rinse with pure water and dry the surface using nitrogen gas.

[0260] (4) Calculate the silica area remaining on the copper surface after evaluation.

[0261] (5) Calculate PRE.

[0262] <Cleansing power of silica abrasives on silicon oxide films>

[0263] (Silica abrasive area when contaminated with silica abrasive) - (Silica abrasive area after evaluation) / (Silica abrasive area when contaminated with silica abrasive) x 100 (%); PRE (Particle Removal Efficiency)

[0264] O: 99.0% or more, △: 97.0 to 99.0%, X: 97.0% or less

[0265] Silica abrasive present on the surface of the silicon oxide film was analyzed using a scanning electron microscope (Hitachi, S4800).

[0266] (1) Cut the silicon oxide film into 2 cm x 2 cm pieces and then pretreat.

[0267] (2) After simulating silica contamination by immersing in an abrasive containing silica abrasive, the area with silica abrasive is calculated using a program compared to the area analyzed using a scanning electron microscope.

[0268] (3) After contacting each cleaning solution with the silicon oxide film for a certain period of time by immersion or brush scrubbing, rinse with pure water and dry the surface using nitrogen gas.

[0269] (4) After evaluation, the silica area remaining on the silicon oxide film surface is calculated.

[0270] (5) Calculate PRE.

[0271] <Organic residue cleaning power>

[0272] (Number of organic particles remaining after organic matter cleaning)

[0273] O: 0 EA, △: 50 EA or less, X: 50 EA or more

[0274] Organic particles present on the surface of copper and silicon oxide films were analyzed using an optical microscope and a scanning electron microscope (Hyrox, KH-8700).

[0275] (1) Cut the copper or silicon oxide film into 2 cm x 2 cm pieces and then pretreat them.

[0276] (2) Add organic powder to IPA and spray it on the film.

[0277] (3) After contacting each cleaning solution with the copper or silicon oxide film for a certain period of time by immersion or brush scrubbing, rinse with pure water and dry the surface using nitrogen gas.

[0278] (4) After evaluation, count the number of organic particles remaining on the surface of the copper or silicon oxide film.

[0279] <Confirmation of copper oxide film formation>

[0280] After evaluation, the copper (Cu) and oxygen (O) element intensities were checked using an X-ray fluorescence spectrometer (XRF; Rigaku, ZSX Primus 400) to confirm whether an oxide film was formed on the copper.

[0281] (1) Cut the copper wafer into 2 cm x 2 cm sizes and then preprocess it.

[0282] (2) Copper and oxygen intensities are checked using an energy-dispersive X-ray fluorescence spectrometer before evaluation.

[0283] (3) Soak in the cleaning solution for 1 hour.

[0284] (4) After evaluation, check the copper and oxygen intensities.

[0285] Composition (% by weight, balance ultrapure water) Compound Example 1 Example 2 Example 3 Example 4 Etching agent Citric acid 5.0 Ammonium citrate 1.0 Glycine 1.0 Arginine 1.0 Metal corrosion inhibitor Uric acid 1.5 1.5 1.5 1.5 Kojic acid Ascorbic acid Silicon film etching inhibitor MSA 1.0 1.0 1.0 1.0 Sulfamic acid Ammonium sulfamate Basic compound containing a hydroxyl group Tetraethylammonium hydroxide (TEAH) 18.8 12.6 12.4 11.8 Organic solvent Ethanolamine (MEA) 5.0 5.0 5.0 5.0 Immersion evaluation result Cu E / R [Å / min] 32.79 30.27 43.80 87.29 Oxide E / R [Å / min]0.140.090.120.18Oxide Roughness (Increase / decrease before / after evaluation)DecreaseNo changeNo changeDecreaseCleansing power (Silica)Cu△XO△Oxide△△X△Cleansing power (Organic)CuOXXXOxideO△X△Brush Scrubbing Evaluation ResultsCu E / R [Å / min]20.695.090.0031.44Oxide E / R [Å / min]0.000.120.000.00Oxide Roughness (Increase / decrease before / after evaluation)DecreaseDecreaseNo changeCleansing power (Silica)CuOXXXOxideO△△OCleaning power (Organic)CuOXOXOxideOOOO

[0286] Through the above Table 1, it was confirmed that the etching rate of the metal layer (copper) can be controlled depending on the type of etching agent. It was also confirmed that the copper etching rate can be controlled not only by the type of etching agent, but also by adjusting the process conditions (time, temperature, cleaning method), etching agent content, and deionized water dilution ratio.

[0287] As a specific example, in the additional embodiment 1 above, when 30 seconds were evaluated by immersion evaluation, it was possible to form a copper recess with a thickness of 15 angstroms, but the result of the brush scrubbing evaluation showed that the copper etching rate was lower than the result of the immersion evaluation. This is believed to be because insufficient time was given for the copper to be etched.

[0288] In addition, depending on the polarity and hydrophilicity of the component, it may not be etched by brush scrubbing. Therefore, if sufficient copper recesses are created by CMP, the etchant composition of Additional Example 3 can be used to prevent further copper etching.

[0289] Composition (% by weight, balance ultrapure water) Compound Example 1 Example 5 Example 6 Etching agent Citric acid 5.0 5.0 5.0 Ammonium citrate Glycine Arginine Metal corrosion inhibitor Uric acid 1.5 Kojic acid 1.5 Ascorbic acid 1.5 Silicon film etching inhibitor MSA 1.0 1.0 1.0 Sulfamic acid Ammonium sulfamate Basic compound containing a hydroxyl group Tetraethylammonium hydroxide (TEAH) 18.8 19.3 19.7 Organic solvent Ethanolamine (MEA) 5.0 5.0 5.0 Immersion evaluation results Cu E / R [Å / min] 32.7 9 5.17 3.93 Oxide E / R [Å / min] 0.14 0.0 3 0.26 Oxide Roughness (before / after evaluation) Increase / decrease) Decrease No change Increase Cleaning power (Silica) Cu△XX Oxide△△△ Cleaning power (Organic) CuOX△Oxide OOX Brush scrubbing evaluation results Cu E / R [Å / min] 20.69 10.52 25.88 Oxide E / R [Å / min] 0.000.000.00 Oxide Roughness (Before / After Evaluation Increase / decrease) Decrease No change Cleaning power (Silica) CuOXX Oxide O△OClean power (Organic) CuOX△Oxide OOO

[0290] The intensities of copper (Cu) and oxygen (O) elements were measured under vacuum conditions for pure copper wafers and Examples 1, 5, and 6.

[0291] XRF Intensity Pure Copper Wafer Example 1 Example 5 Example 6 Cu 185 2.3 14 179 8.8 24 182 4.13 8 177 4.9 8 0 0.13 3 78 0.0 8 9 4 2 0.0 8 7 0 7 6 0.0 9 3 0 16

[0292] As shown in Table 2 above, it was confirmed that the oxygen intensity decreased after evaluation in all of Examples 1, 5, and 6, and as shown in Table 3 above, it was confirmed that no copper oxide film was formed.

[0293] Composition (% by weight, balance ultrapure water) Compound Example 1 Example 7 Example 8 Comparative Example 1 Etching agent Citric acid 5.0 5.0 5.0 5.0 Ammonium citrate Glycine Arginine Metal corrosion inhibitor Uric acid 1.5 1.5 1.5 1.5 Kojic acid Ascorbic acid Silicon film etching inhibitor MSA 1.0 Sulfamic acid 1.0 Ammonium sulfamate 1.0 Basic compound containing a hydroxyl group Tetraethylammonium hydroxide (TEAH) 18.8 18.5 18.4 13.9 Organic solvent Ethanolamine (MEA) 5.0 5.0 5.0 5.0 Immersion evaluation result Cu E / R [Å / min] 32.79 17.76 15.56 16.42 Oxide E / R [Å / min]0.140.250.290.08Oxide Roughness (Increase / Decrease before / after evaluation)DecreaseIncreaseIncreaseDecreaseCleansing power (Silica)Cu△OXXOxide△X△△Cleansing power (Organic)CuOO△OOxideOX△△Brush scrubbing evaluation resultsCu E / R [Å / min]20.69-15.500.0010.40Oxide E / R [Å / min]0.000.050.080.13Oxide Roughness (Increase / Decrease before / after evaluation)DecreaseNo changeNo changeDecreaseCleansing power (Silica)CuOOO△OxideOO△△Cleansing power (Organic)CuOXXOOxideO△XO

[0294] As shown in Table 4 above, the effectiveness of the silicon oxide film etching inhibitor was confirmed in the brush scrubbing evaluation.

[0295] Composition (% by weight, balance ultrapure water) Compound Example 1 Example 9 Example 10 Etching agent Citric acid 5.0 5.0 5.0 Ammonium citrate Glycine Arginine Metal corrosion inhibitor Uric acid 1.5 1.5 1.5 Kojic acid Ascorbic acid Silicon film etching inhibitor MSA 1.0 1.0 1.0 Sulfamic acid Ammonium sulfamate Basic compound containing a hydroxyl group Tetraethylammonium hydroxide (TEAH) 18.8 19.2 19.2 Organic solvent Ethanolamine (MEA) 5.0 5.0 5.0 Surfactant Nonionic (TERGITOL™TMN-6) 0.01 Anionic (TRITON™DF-20) 0.01 Immersion evaluation result Cu E / R [Å / min] 32.7 9 20.04 17.20 Oxide E / R [Å / min]0.140.100.32Oxide Roughness (Increase / decrease before / after evaluation)DecreaseNo changeDecreaseCleansing power (Silica)Cu△OOOxide△△△Cleansing power (Organic)CuOOOOxideOO△Brush scrubbing evaluation resultsCu E / R [Å / min]20.695.1810.38Oxide E / R [Å / min]0.000.250.03Oxide Roughness (Increase / decrease before / after evaluation)DecreaseDecreaseCleansing power (Silica)CuOO△OxideO△△Cleansing power (Organic)CuOXOOxideOOO

[0296] As shown in Table 5 above, additional surfactant can be added. In this case, the roughness of the silicon oxide film can be reduced, but a decrease in cleaning power was observed.

[0297] Composition (% by weight, balance ultrapure water) Compound Example 1 Comparative Example 2 Comparative Example 3 Comparative Example 4 Comparative Example 5 Comparative Example 6 Comparative Example 7 Comparative Example 8 Comparative Example 9 Etching agent Citric acid 5.0 5.0 5.0 5.0 Ammonium citrate Glycine Arginine Hydroxide 5.0 Metal corrosion inhibitor Uric acid 1.5 1.5 1.5 1.5 1.5 Kojic acid Ascorbic acid Silicon film etching inhibitor MSA 1.0 1.0 1.0 1.0 Sulfamic acid Ammonium sulfamate Basic compound containing a hydroxyl group Tetraethylammonium hydroxide (TEAH) 18.8 2.0 8.2 pH adjuster (Buffer) Ammonium acetate 18.8 Organic matter solubilizer Ethanolamine (MEA) 5.0 5.0 5.0 9 2.0 7 5.0 Dipping result (Batch)Cu E / R [Å / min]32.7911.717.4710.299.5710.805.543.130.00Oxide E / R [Å / min]0.140.220.320.250.030.300.020.310.03Oxide Roughness (Increase / Decrease Before / After Evaluation)DecreaseNo ChangeIncreaseNo ChangeNo ChangeNo ChangeNo ChangeIncreaseIncreaseCleansing Power (Silica)Cu△XXXXXX△△Oxide△△△△△X△XCleansing Power (Organic)CuOXXXXOX△△OxideOXOOO△XXXBrush Scrubbing ResultsCu E / R [Å / min]20.69-25.9320.1526.280.005.102.213.090.00Oxide E / R [Å / min]0.000.050.050.060.010.000.010.430.15Oxide Roughness (increase / decrease before / after evaluation)DecreaseNo changeNo changeNo changeNo changeNo changeNo changeNo changeNo changeCleansing power (Silica)CuOXXXXXX△△OxideO△O△△OX△XCleansing power (Organic)CuOXXXX△X△△OxideO△OO△△X△X

[0298] As shown in Table 6 above, in Example 1, excellent performance was confirmed in terms of silica abrasive cleaning power, organic matter cleaning power, silicon oxide film etching speed, and silicon oxide film roughness, and in Comparative Examples 1 to 5, it was confirmed that the organic matter dissolving agent MEA was effective in cleaning organic matter. However, it was confirmed that the cleaning power was reduced when the compositions were not mixed according to Comparative Examples 1 to 5.

[0299] Furthermore, in Comparative Example 6, where MEA was used alone, a poor effect in cleaning the surface of a copper film was confirmed, and in Comparative Example 7, where TEAH was replaced with ammonium acetate, a poor result in cleaning a copper film and a silicon oxide film was confirmed, and in Comparative Example 8, where TEAH was not used and the pH was adjusted to 11.5 with alkanolamine, it was confirmed that the cleaning of the copper film and the silicon oxide film was poor overall, and in Comparative Example 9, where hydrogen peroxide was used as an etchant such as citric acid, copper was not etched, and a large poor effect in cleaning power of a silicon oxide film was confirmed.

[0300] Therefore, when the etching cleaning solution composition of the present invention is applied to a conventional cleaning step of a method and device for planarizing a structure of hybrid bonding, it is possible to simultaneously remove polishing residues present on the surface of the oxide film and the metal layer while suppressing the rounding phenomenon due to over-polishing of the oxide film when forming a recess between joints required for hybrid bonding, and to reduce process costs while exhibiting an effect of improving the bonding strength of the hybrid bonding process.

[0301] In addition, in the case of conventional CMP slurry, it is difficult to control the selectivity for the polishing rate of the oxide film and Cu, so that it is impossible to control the appropriate dishing of the copper via. This is because, if the polishing rate of the oxide film is too fast compared to the polishing rate of copper in terms of the selectivity between the oxide film and copper, the desired dishing of the copper via electrode cannot be formed, and thus the bonding process cannot be performed. Conversely, if the polishing rate of copper is too fast, the dishing of the copper via electrode may be deep, and thus the bonding of the copper via electrode may not be formed when the bonding process is performed. These problems can be solved by using the etching cleaning solution composition of the present invention in the conventional cleaning step of the structure planarization method and device of hybrid bonding.

[0302] [Explanation of symbols]

[0303] 101: Substrate

[0304] 102: Via

[0305] 103: Oxide layer

[0306] 104: Barrier layer

[0307] 105: Metal layer

[0308] 1001: CMP module

[0309] 1003: Etch cleaning module

[0310] 1005: DW Cleaning Module

[0311] 1007: Pad Module

[0312] 1009: Brush Module

Claims

1. In the method for structural flattening of hybrid bonding, The hybrid bonding structure comprises: a substrate; a via formed in a recessed region of the substrate; an oxide layer formed in each of the recessed region and the non-recessed region of the substrate; a barrier layer formed on a lower portion and a sidewall of the via and on the oxide layer; and a metal layer formed within the via and on the barrier layer. The above hybrid bonding structural flattening method is, A first step of removing the metal layer formed on the non-recessed area; A second step of removing the metal layer residue, the oxide layer, and the barrier layer formed on the oxide layer on the non-recessed area; A third step of leveling the metal layer and oxide layer formed within the via; and A fourth step of forming a metal thermal expansion space flatly while removing a barrier layer formed on the lower part and side walls of the via; characterized by including; Flattening process of the structure before hybrid bonding.

2. In paragraph 1, The material of the metal layer is copper, the material of the barrier layer includes at least one selected from Ti, TiN, Ta, and TaN, and the material of the oxide layer includes at least one selected from Si, SiO2, and SiCN. Method for structural flattening of hybrid bonding.

3. In paragraph 1, The metal layer removed in the first step is characterized by being all the metal layer deposited on the non-recessed area and some of the metal layer formed within the via. Method for structural flattening of hybrid bonding.

4. In paragraph 1, The above first, second and third steps are characterized in that they are performed by a chemical mechanical polishing (CMP) process. Method for structural flattening of hybrid bonding.

5. In paragraph 1, The second and third steps are characterized in that they are performed separately or simultaneously using a slurry in which the selectivity ratio for the polishing speed of the oxide layer and the metal layer is adjusted to 1:

1. Method for structural flattening of hybrid bonding.

6. In paragraph 5, The above slurry is characterized by containing 0.05 to 5 wt% of silica particles, 0.001 to 1 wt% of an azole corrosion inhibitor containing one or more N groups, 0.001 to 0.5 wt% of an amino acid complexing agent, and 0.05 to 1 wt% of an oxidizing agent, and the remainder containing water. Method for structural flattening of hybrid bonding.

7. In paragraph 1, The fourth step is characterized in that it is performed by filling the recessed area of ​​the substrate with an etching cleaning solution composition. Method for structural flattening of hybrid bonding.

8. In paragraph 1, It is characterized by including a step (e) of filling the recess area of ​​the substrate with an etching cleaning solution composition in the fourth step and then additionally filling the recess area of ​​the substrate with DW (deionized water). Method for structural flattening of hybrid bonding.

9. In Article 8, The above etching cleaning solution composition and DW are characterized in that they are filled using at least one pad and brush selected independently from each other. Method for structural flattening of hybrid bonding.

10. In paragraph 7, The above etching cleaning solution composition is characterized in that it is a basic solution containing an etching agent; a metal corrosion inhibitor; a silicon film etching inhibitor; a basic compound containing a hydroxyl group; and an alkanol amine compound. Method for structural flattening of hybrid bonding.

11. In paragraph 10, The etching agent is characterized in that it contains at least one selected from asparagine, ammonium citrate, glycine, arginine, histidine, lysine, alanine, citric acid, aspartic acid, and glutamic acid, for example, 0.1 to 10 wt% based on the total weight of the etching cleaning solution composition. Method for structural flattening of hybrid bonding.

12. In paragraph 7, The above etching cleaning composition is characterized in that it flattens the metal layer contained in the via by etching it at an etching rate of 50 Å / min or less. Method for structural flattening of hybrid bonding.

13. In a structure flattening device of hybrid bonding, The hybrid bonding structure comprises: a substrate; a via formed in a recessed region of the substrate; an oxide layer formed in each of the recessed region and the non-recessed region of the substrate; a barrier layer formed on a lower portion and a sidewall of the via and on the oxide layer; and a metal layer formed within the via and on the barrier layer. The above hybrid bonding structure planarization device is characterized by including at least two CMP modules; and an etching cleaning module; Structural flattening device for hybrid bonding.

14. In paragraph 13, The second or more modules among the above two or more CMP modules are characterized in that they are used to planarize the step between the metal layer and the oxide layer formed within the via using a slurry in which the selectivity ratio for the polishing speed of the oxide layer and the metal layer is adjusted to 1:

1. Structural flattening device for hybrid bonding.

15. In paragraph 13, The above etching cleaning module is characterized in that it is used to form a flat metal thermal expansion space while removing a barrier layer formed on the lower part and side walls of the via by filling a recessed area of ​​the substrate with an etching cleaning solution composition. Structural flattening device for hybrid bonding.

16. In paragraph 13, The above etching cleaning module is characterized by being a pad module or a brush module. Structural flattening device for hybrid bonding.

17. In paragraph 13, The above hybrid bonding structure flattening device is characterized by additionally including a DW cleaning module. Structural flattening device for hybrid bonding.

18. In paragraph 13, The above hybrid bonding structure planarization device is characterized by comprising a first CMP module, a second CMP module, and an etching cleaning pad module. Structural flattening device for hybrid bonding.

19. In paragraph 13, The above hybrid bonding structure planarization device is characterized by comprising a first CMP module, a second CMP module, a third CMP module, and an etching cleaning brush module. Structural flattening device for hybrid bonding.

20. In paragraph 13, The above hybrid bonding structure planarization device is characterized by comprising a first CMP module, a second CMP module, an etching cleaning pad module, and an etching cleaning brush module. Structural flattening device for hybrid bonding.

21. In paragraph 13, The above hybrid bonding structure planarization device is characterized by comprising a first CMP module, a second CMP module, an etching cleaning pad module, and a DW cleaning brush module. Structural flattening device for hybrid bonding.

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