Display substrate, display panel, display apparatus and backlight regulating method

Abstract

A display substrate, a display panel, a display apparatus and a backlight regulating method. The display substrate comprises: a substrate (1), and at least one first measurement component (2) located on one side of the substrate (1), the first measurement component (2) being used for measuring backlight. The first measurement component (2) comprises: a first active layer (21), located on one side of the substrate (1); and a gate structure layer (22), located on the side of the first active layer (21) facing the substrate (1). The gate structure layer (22) comprises: a transparent electrode layer (G1) and a light-shielding layer (G2) which are stacked. The light-shielding layer (G2) is provided with a light-shielding part (G21) and a hollowed-out part (G22), so as to allow backlight irradiated to the light-shielding layer (G2) to partially pass through the hollowed-out part (G22) and to be partially shielded by the light-shielding part (G21).

Description

Display substrate, display panel, display device and backlight adjustment method Technical Field

[0001] The present disclosure relates to the field of semiconductor technology, and in particular to a display substrate, a display panel, a display device, and a backlight adjustment method. Background Art

[0002] Liquid Crystal Display (LCD) is one of the most popular display structures today. Currently, thin film transistor (TFT) LCDs are the dominant type of LCD. Their display panels typically consist of opposing color filter substrates, TFT display substrates, and a liquid crystal layer interposed between the two substrates.

[0003] Summary of the Invention

[0004] The present disclosure provides a display substrate, a display panel, a display device, and a backlight adjustment method. The display substrate includes: a substrate, and at least one first detection component located on one side of the substrate; the first detection component is used to detect backlight;

[0005] Wherein, the first detection component includes:

[0006] a first active layer, located on one side of the substrate;

[0007] A gate structure layer is located on the side of the first active layer facing the substrate, and the gate structure includes: a transparent electrode layer and a light-shielding layer arranged in layers; the light-shielding layer has a light-shielding portion and a hollow portion, so that the backlight irradiated on the light-shielding layer is partially transmitted through the hollow portion and partially blocked by the light-shielding portion.

[0008] In a possible embodiment, the first detection component further includes: a first source-drain electrode layer; the first source-drain electrode layer includes: a first electrode and a second electrode arranged opposite to each other;

[0009] The first pole includes: a first main portion extending along a first direction, and a plurality of first branches extending from the first main portion along the second direction;

[0010] The second pole includes: a second main portion extending along the first direction, and a plurality of second branches extending from the second main portion along the second direction; the first branches are arranged to cross the second branches.

[0011] In a possible implementation manner, the gap between the first branch and the second branch is an orthographic projection of the substrate, covering the orthographic projection of the hollow portion on the substrate.

[0012] In a possible implementation, the hollow portion includes: a plurality of sub-hollow portions sequentially arranged along the first direction;

[0013] The sub-hollow portion includes: a first sub-hollow portion, a second sub-hollow portion, and a third sub-hollow portion; the first sub-hollow portion extends along the first direction; the second sub-hollow portion is connected to one end of the first sub-hollow portion and extends along the second direction; the third sub-hollow portion is connected to the other end of the first sub-hollow portion and extends along the second direction.

[0014] In one possible embodiment, the orthographic projection of the second sub-hollow portion on the substrate is located between a group of adjacent first branches and the second branches on the substrate; the orthographic projection of the third sub-hollow portion on the substrate is located between another group of adjacent first branches and the second branches on the substrate.

[0015] In a possible implementation manner, the minimum width of the second sub-hollow portion in the first direction is less than or equal to the minimum width of the gap between the first branch and the second branch in the first direction;

[0016] The minimum width of the third sub-hollow portion in the first direction is less than or equal to the minimum width of the gap between the first branch and the second branch in the first direction.

[0017] In one possible embodiment, the first active layer includes: a plurality of first sub-active patterns sequentially arranged along the first direction; the light shielding portion includes: a plurality of sub-light shielding portions sequentially arranged along the first direction; the hollow portion is located between adjacent sub-light shielding portions;

[0018] The orthographic projection area of ​​the first sub-active pattern on the substrate is larger than the orthographic projection area of ​​the sub-light-shielding portion on the substrate, and the orthographic projection of the first sub-active pattern on the substrate covers the orthographic projection of the sub-light-shielding portion on the substrate.

[0019] In a possible implementation manner, a minimum spacing between adjacent sub-light-shielding portions in the first direction is greater than a minimum spacing between adjacent first sub-active patterns in the first direction.

[0020] In a possible implementation manner, the first source and drain electrode includes: a plurality of first sub-source and drain electrode groups arranged sequentially along the first direction;

[0021] The first sub-source-drain group includes: two second branches and one first branch; the minimum gap between two adjacent first sub-source-drain groups is larger than the minimum gap between the first sub-portion and the adjacent second branch in the first sub-source-drain group.

[0022] In a possible implementation manner, the orthographic projection of the first sub-active pattern on the substrate covers the orthographic projection of the first sub-source-drain electrode group on the substrate.

[0023] In a possible implementation manner, the hollow portion is located at an outer edge of the light shielding portion.

[0024] In a possible embodiment, in the first detection component, the first active layer is a planar electrode, the light-shielding layer is a planar electrode, the orthographic projection area of ​​the first active layer on the substrate is larger than the orthographic projection area of ​​the light-shielding layer on the substrate, and the orthographic projection of the first active layer on the substrate covers the orthographic projection of the light-shielding layer on the substrate.

[0025] In a possible implementation, the light shielding layer is made of metal.

[0026] In a possible implementation, the first detection component is a brightness detection component.

[0027] In a possible implementation, the first detection component is a color temperature detection component; the first detection component includes: a first sub-detection component, a second sub-detection component, and a third sub-detection component;

[0028] The display substrate further includes: a color resist layer located on the side of the first detection component facing the backlight; the color resist layer includes: a first color resist portion, a second color resist portion, and a third color resist portion;

[0029] The orthographic projection of the first color resistance portion on the substrate covers the orthographic projection of the first sub-detection component on the substrate; the orthographic projection of the second color resistance portion on the substrate covers the orthographic projection of the second sub-detection component on the substrate; the orthographic projection of the third color resistance portion on the substrate covers the orthographic projection of the third sub-detection component on the substrate.

[0030] In a possible implementation, the color resist layer is located between the first detection component and the substrate; or, the color resist layer is located on a side of the substrate facing away from the first detection component.

[0031] In a possible implementation manner, the first source and drain electrode layer is located between the first active layer and the gate structure layer;

[0032] The first detection component further includes: an ohmic contact layer located on a side of the first active layer facing the first source-drain layer; a pattern of the ohmic contact layer is consistent with a pattern of the first source-drain layer.

[0033] In a possible implementation, the display substrate further includes a second detection component, and the second detection component includes:

[0034] a second active layer, located on one side of the substrate;

[0035] a gate layer, located on a side of the second active layer facing the substrate, wherein the orthographic projection of the gate layer on the substrate covers the orthographic projection of the second active layer on the substrate, so that backlight irradiating the gate layer is blocked by the gate layer;

[0036] The second source-drain layer is located on a side of the second active layer facing away from the substrate.

[0037] In a possible implementation, the second active layer and the first active layer are formed of the same layer and material; the gate layer and the light shielding layer are formed of the same layer and material; and the second source and drain layer and the first source and drain layer are formed of the same layer and material.

[0038] An embodiment of the present disclosure further provides a display panel, which includes the display substrate provided by the embodiment of the present disclosure.

[0039] An embodiment of the present disclosure further provides a display device, which includes the display panel provided in the embodiment of the present disclosure and also includes a backlight module located on the backlight side of the display panel.

[0040] In a possible implementation, the display device further includes: a processing component; the processing component is configured to adjust the brightness and / or color temperature of the backlight module according to information detected by the first detection component.

[0041] The present disclosure further provides a backlight adjustment method for the display device provided in the embodiment of the present disclosure, which includes:

[0042] controlling the first detection component to perform light detection to obtain first information;

[0043] The backlight of the backlight module is adjusted according to the first information detected by the first detection component, and display is performed with the adjusted backlight.

[0044] In a possible implementation, adjusting the backlight of the backlight module according to the first information detected by the first detection component includes:

[0045] controlling the second detection component to perform light detection to obtain second information;

[0046] The backlight of the backlight module is adjusted according to the first information and the second information. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] FIG1A is one of the schematic cross-sectional views along the dotted line EF in FIG1B ;

[0048] FIG1B is a schematic top view of a first detection component according to an embodiment of the present disclosure;

[0049] FIG1C is a schematic diagram of a single film layer of the transparent electrode layer in FIG1B ;

[0050] FIG1D is a schematic diagram of a single film layer of the light shielding layer in FIG1B ;

[0051] FIG1E is a schematic diagram of a single film layer of the first active layer in FIG1B ;

[0052] FIG1F is a schematic diagram of a single film layer of the first source and drain layer in FIG1B ;

[0053] FIG1G is a schematic diagram of the stacking of the light shielding layer and the first source and drain electrode layer in FIG1B ;

[0054] FIG1H is a second schematic cross-sectional view along the dotted line EF in FIG1B ;

[0055] FIG2A is a schematic cross-sectional view showing a configuration of a first detection component and a second detection component; ...

[0056] FIG2B is a schematic diagram of a stack of the second detection component corresponding to the first detection component shown in FIG1B ;

[0057] FIG2C is a schematic diagram of a single film layer of the gate layer in FIG2B ;

[0058] FIG2D is a schematic diagram of a single film layer of the second active layer in FIG2B ;

[0059] FIG2E is a schematic diagram of a single film layer of the second source and drain layer in FIG2B ;

[0060] FIG3A is one of the cross-sectional schematic diagrams along the dotted line EF in FIG3B ;

[0061] FIG3B is a second schematic top view of the first detection component provided in an embodiment of the present disclosure;

[0062] FIG3C is a schematic diagram of a single film of the transparent electrode layer in FIG3B ;

[0063] FIG3D is a schematic diagram of a single film layer of the light shielding layer in FIG3B ;

[0064] FIG3E is a schematic diagram of a single film layer of the first active layer in FIG3B ;

[0065] FIG3F is a schematic diagram of a single film layer of the first source and drain layer in FIG3B ;

[0066] FIG3G is a second schematic cross-sectional view along the dotted line EF in FIG3B ;

[0067] FIG4A is a second cross-sectional schematic diagram showing a configuration in which the first detection component and the second detection component are provided;

[0068] FIG4B is a schematic diagram of a stack of the second detection component corresponding to the first detection component shown in FIG3B ;

[0069] FIG4C is a schematic diagram of a single film layer of the gate layer in FIG4B ;

[0070] FIG4D is a schematic diagram of a single film layer of the second active layer in FIG4B ;

[0071] FIG4E is a schematic diagram of a single film layer of the second source and drain layer in FIG4B ;

[0072] FIG5A is a schematic cross-sectional view along the dotted line EF in FIG5B ;

[0073] FIG5B is a third schematic top view of the first detection component provided in an embodiment of the present disclosure;

[0074] FIG5C is a schematic diagram of a single film of the transparent electrode layer in FIG5B ;

[0075] FIG5D is a schematic diagram of a single film layer of the light shielding layer in FIG5B ;

[0076] FIG5E is a schematic diagram of a single film layer of the first active layer in FIG5B ;

[0077] FIG5F is a schematic diagram of a single film layer of the first source and drain layer in FIG5B ;

[0078] FIG6A is a third cross-sectional schematic diagram showing a configuration in which the first detection component and the second detection component are provided simultaneously;

[0079] FIG6B is a schematic diagram of a stack of the second detection component corresponding to the first detection component shown in FIG5B ;

[0080] FIG6C is a schematic diagram of a single film layer of the gate layer in FIG6B ;

[0081] FIG6D is a schematic diagram of a single film layer of the second active layer in FIG6B ;

[0082] FIG6E is a schematic diagram of a single film layer of the second source and drain layer in FIG6B ;

[0083] FIG7A is a schematic diagram of a first detection component for color temperature detection according to an embodiment of the present disclosure;

[0084] FIG7B is a second structural diagram of a first detection component for color temperature detection provided by an embodiment of the present disclosure;

[0085] FIG8 is a schematic structural diagram of a display device provided in an embodiment of the present disclosure;

[0086] FIG9 is a schematic diagram of signal conversion provided by an embodiment of the present disclosure;

[0087] FIG10 is a schematic diagram of a display device adjustment process according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0088] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings of the embodiments of the present invention. It should be noted that the sizes and shapes of the figures in the drawings do not reflect the actual proportions, and the purpose is only to illustrate the contents of the present invention. And the same or similar numbers throughout represent the same or similar elements or elements with the same or similar functions. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the described embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0089] Unless otherwise defined, the technical or scientific terms used herein shall have the ordinary meaning understood by persons of ordinary skill in the field to which the invention belongs. The words "first", "second" and similar terms used in the specification and claims of the present invention do not indicate any order, quantity or importance, but are only used to distinguish different components. Words such as "include" or "comprise" mean that the elements or objects preceding the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects. "Inside", "outside", "upper", "lower" and the like are only used to indicate relative positional relationships. When the absolute position of the object being described changes, the relative positional relationship may also change accordingly.

[0090] As used herein, "about" or "approximately the same" is inclusive of the stated value and means within an acceptable range of deviation for the particular value as determined by one of ordinary skill in the art taking into account the measurement in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system). For example, "approximately the same" can mean that the difference relative to the stated value is within one or more standard deviations, or within ±30%, 20%, 10%, 5%.

[0091] In the accompanying drawings, the thickness of layers, films, panels, regions, etc. are exaggerated for clarity. Exemplary embodiments are described herein with reference to cross-sectional views that are schematic representations of idealized embodiments. As such, deviations from the shapes of the figures are to be expected as a result of, for example, manufacturing techniques and / or tolerances. Thus, the embodiments described herein should not be construed as limited to the specific shapes of the regions as shown herein, but rather include deviations in shape that result from, for example, manufacturing. For example, a region illustrated or described as flat may typically have rough and / or nonlinear features. Furthermore, sharp corners illustrated may be rounded. Thus, the regions illustrated in the figures are schematic in nature, and their shapes are not intended to illustrate the precise shape of the regions and are not intended to limit the scope of the claims.

[0092] In order to keep the following description of the embodiments of the present disclosure clear and concise, the present disclosure omits detailed descriptions of known functions and known components.

[0093] Currently, display screens are increasingly used in various products such as mobile phones, televisions, and cars. If the display effect of the display screen deviates from the usual (for example, abnormal backlight brightness, abnormal backlight color temperature, unrecognizable image content, etc.), users may not be able to recognize the valid information on the display screen, affecting the user experience.

[0094] Existing backlight detection devices use a transistor structure, in which the transistor gate is set as a transparent electrode to detect the backlight. As a result, the active layer of the transistor is exposed to backlight for a long time. The backlight intensity is usually strong, with a brightness generally ranging from several thousand nits to tens of thousands of nits. Long-term high-intensity light exposure will cause the transistor characteristics to drift, resulting in large detection errors or complete failure of the photosensitive transistor.

[0095] In view of this, an embodiment of the present disclosure provides a display substrate, as shown in Figures 1A to 1G, Figures 3A to 3F, and Figures 5A to 5F, wherein Figure 1A is a schematic cross-sectional view along the dotted line EF in Figure 1B, Figure 1C is a schematic diagram of a single film layer of the transparent electrode layer in Figure 1B, Figure 1D is a schematic diagram of a single film layer of the light shielding layer in Figure 1B, Figure 1E is a schematic diagram of a single film layer of the first active layer in Figure 1B, Figure 1F is a schematic diagram of a single film layer of the first source and drain layer in Figure 1B, Figure 1G is a schematic diagram of a stacked layer of the light shielding layer and the first source and drain layer in Figure 1B, Figure 3A is a schematic cross-sectional view along the dotted line EF in Figure 3B, and Figure 3C is a schematic diagram of a single film layer of the transparent electrode layer in Figure 3B. 3D is a schematic diagram of a single film layer of the light shielding layer in FIG3B , FIG3E is a schematic diagram of a single film layer of the first active layer in FIG3B , FIG3F is a schematic diagram of a single film layer of the first source-drain electrode layer in FIG3B , FIG5A is a schematic diagram of a cross-section along dotted line EF in FIG5B , FIG5C is a schematic diagram of a single film layer of the transparent electrode layer in FIG5B , FIG5D is a schematic diagram of a single film layer of the light shielding layer in FIG5B , FIG5E is a schematic diagram of a single film layer of the first active layer in FIG5B , and FIG5F is a schematic diagram of a single film layer of the first source-drain electrode layer in FIG5B ; the display substrate comprises: a substrate 1, and at least one first detection component 2 located on one side of the substrate 1; the first detection component 2 is used to detect backlight;

[0096] The first detection component 2 includes:

[0097] A first active layer 21 is located on one side of the substrate 1;

[0098] The gate structure layer 22 is located on the side of the first active layer 21 facing the substrate 1. The gate structure 22 includes: a transparent electrode layer G1 and a light-shielding layer G2 arranged in a stacked manner; the light-shielding layer G2 has a light-shielding portion G21 and a hollow portion G22, so that the backlight irradiated on the light-shielding layer G2 is partially transmitted through the hollow portion G22 and partially blocked by the light-shielding portion G21.

[0099] In the embodiment of the present disclosure, the gate structure 22 includes: a transparent electrode layer G1 and a light-shielding layer G2 that are stacked; wherein the light-shielding layer G2 has a light-shielding portion G21 and a hollow portion G22, so that when backlight passes through the light-shielding layer G2, part of it passes through the hollow portion G22, and part of it is blocked by the light-shielding portion G21; wherein, the transparent electrode layer G1 can act as a gate and can allow backlight to pass through to achieve backlight detection; and the light-shielding layer G2 can allow part of the backlight to pass through to achieve backlight detection, while part of the backlight is blocked, which can improve the problem that various positions of the first active layer 21 are exposed to strong backlight for a long time, causing transistor characteristics to drift, resulting in large detection errors or complete failure.

[0100] In one possible embodiment, the backlight may be light emitted by a backlight module; the first detection component 2 is located on one side of the substrate 1, and the backlight module may be located on the other side of the substrate 1, that is, taking Figure 1A as an example, the first detection component 2 is arranged on the upper side of the substrate 1, and the backlight module may be located on the lower side of the substrate 1.

[0101] In one possible embodiment, the light-shielding layer G2 may be located on the side of the transparent electrode layer G1 facing the substrate 1, as shown in FIG1A ; in another possible embodiment, the light-shielding layer G2 may also be located on the side of the transparent electrode layer G1 facing away from the substrate 1; in one possible embodiment, the light-shielding layer G2 may be a film layer in direct contact with the transparent electrode layer G1, as shown in FIG1A ; in another possible embodiment, the light-shielding layer G2 may also be a film layer in non-direct contact with the transparent electrode layer G1.

[0102] In one possible embodiment, the light-shielding layer G2 may be a metal layer, for example, any one or more of silver (Ag), copper (Cu), aluminum (Al), titanium (Ti) and molybdenum (Mo), or alloy materials of the above metals, such as aluminum-neodymium alloy (AlNd) or molybdenum-niobium alloy (MoNb), and may be a single-layer structure or a multi-layer composite structure, such as Ti / Al / Ti, etc.; since the metal layer has good electrical conductivity, the light-shielding layer G2 is a metal layer, which can not only have a light-shielding effect, but also reduce the resistance of the transparent electrode layer G1, thereby improving the performance of the first detection component 2.

[0103] In another possible implementation, the light shielding layer G2 may also be a non-metal layer, for example, may be made of the same material as the black matrix layer.

[0104] In a possible embodiment, the material of the transparent electrode layer G1 may include: metal oxide (eg, indium tin oxide, indium-doped zinc oxide (AZO), fluorine-doped tin oxide (AZO), aluminum-doped zinc oxide (AZO), indium-doped cadmium oxide).

[0105] In one possible embodiment, referring to Figures 1A to 1G, 3A to 3F, and 5A to 5F, the orthographic projection of the transparent electrode layer G1 on the substrate 1 may cover the orthographic projection of the light shielding layer G2 on the substrate 1. In one possible embodiment, referring to Figures 1A to 1G, 3A to 3F, and 5A to 5F, the orthographic projection of the transparent electrode layer G1 on the substrate 1 may cover the orthographic projection of the first active layer 21 on the substrate 1.

[0106] In a possible embodiment, referring to FIG. 1A-1G , FIG. 3A-3F , and FIG. 5A-5F , the orthographic projection shape of the transparent electrode layer G1 on the substrate 1 may be block-shaped, for example, rectangular, trapezoidal, circular, or elliptical.

[0107] In a possible embodiment, referring to FIG. 1A to FIG. 1G , FIG. 3A to FIG. 3F , and FIG. 5A to FIG. 5F , the first detection component 2 further includes: a first source-drain layer 23 ; the first source-drain layer 23 includes: a first electrode TA and a second electrode TB arranged opposite to each other;

[0108] The first pole TA includes: a first main portion TA1 extending along a first direction X, and a plurality of first branches TA2 extending from the first main portion TA1 along a second direction Y;

[0109] The second pole TB includes a second main portion TB1 extending along the first direction X, and a plurality of second branches TB2 extending from the second main portion TB1 along the second direction Y. The first branches TA2 and the second branches TB2 are arranged to intersect.

[0110] In the embodiment of the present disclosure, the first source and drain layer 23 includes: a plurality of cross-arranged first branches TA2 and second branches TB2, which can enable the first detection component 2 to be formed by N U-shaped sub-transistors connected in parallel, where N is a positive integer greater than or equal to 1. Compared with a large-size transistor, dividing it into N small transistors is more conducive to improving the process's anti-fluctuation ability.

[0111] In a possible embodiment, referring to Figures 1A to 1G, Figures 3A to 3F, and Figures 5A to 5F, the orthographic projection of the first main portion TA1 on the substrate 1 may not overlap with the orthographic projection of the transparent electrode layer G1 and / or the light shielding layer G2 and / or the first active layer 21 on the substrate 1. In this way, the parasitic capacitance between the first main portion TA1 and the transparent electrode layer G1 and / or the light shielding layer G2 and / or the first active layer 21 can be reduced, thereby avoiding affecting the transmission signal performance of the first main portion TA1. In a possible embodiment, the orthographic projection of the first main portion TA1 on the substrate 1 may also overlap with the orthographic projection of the transparent electrode layer G1 and / or the light shielding layer G2 and / or the first active layer 21 on the substrate 1. In this way, the size of the first detection component 2 can be reduced. Save the wiring space of the array substrate; in a possible embodiment, referring to Figures 1A to 1G, 3A to 3F, and 5A to 5F, the orthographic projection of the second main part TB1 on the substrate 1 can overlap with the orthographic projection of the transparent electrode layer G1 and / or the light shielding layer G2 and / or the first active layer 21 on the substrate 1, so that the size of the first detection component 2 can be reduced and the wiring space of the array substrate can be saved; in a possible embodiment, the orthographic projection of the second main part TB1 on the substrate 1 can also not overlap with the orthographic projection of the transparent electrode layer G1 and / or the light shielding layer G2 and / or the first active layer 21 on the substrate 1, so that the parasitic capacitance between the first main part TA1 and the transparent electrode layer G1 and / or the light shielding layer G2 and / or the first active layer 21 can be reduced, thereby avoiding affecting the transmission signal performance of the first main part TA1.

[0112] In one possible embodiment, referring to Figures 1A to 1G, 3A to 3F, and 5A to 5F, the orthographic projection of the second branch TB2 on the substrate 1 may be located within the orthographic projection of the transparent electrode layer G1 on the substrate 1. In one possible embodiment, referring to Figures 1A to 1G, 3A to 3F, and 5A to 5F, the orthographic projection of the second branch TB2 on the substrate 1 may be located within the orthographic projection of the first active layer 21 on the substrate 1.

[0113] During specific implementation, in the light-shielding layer G2, the hollow portion G22 and the light-shielding portion G21 may have a variety of relative positional relationships. For example, the hollow portion G22 may be located in the middle area of ​​the light-shielding layer G2, that is, in the light-shielding layer G2, the middle area may be provided with the hollow portion G22, and the edge area may be provided with the light-shielding portion G21; for another example, the hollow portion G22 may also be located in the edge area of ​​the light-shielding layer G2, and the light-shielding portion G21 may be located in the middle area of ​​the light-shielding layer G2, as will be described in detail below.

[0114] In one possible embodiment, the hollow portion G22 is located in the middle of the light-shielding layer G2. As shown in FIG1G and FIG1H , the gap between the first branch TA2 and the second branch TB2 is in the orthographic projection of the substrate 1, covering the orthographic projection of the hollow portion G22 on the substrate 1. That is, the orthographic projection of the hollow portion G22 on the substrate 1 is located within the gap between the first branch TA2 and the second branch TB2, and since the area between the first branch TA2 and the second branch TB2 is usually the channel area, by arranging the hollow portion G22 in the channel area, the backlight can enter the channel area, thereby achieving accurate detection of the backlight. The area outside the channel area is blocked by the light-shielding portion G21, which can slow down the drift of the characteristics of the first detection component 2 caused by strong light, thereby extending the service life of the first detection component 2.

[0115] In a possible embodiment, as shown in Figure 1D, the hollow portion G22 includes: a plurality of sub-hollow portions GA arranged in sequence along the first direction X; the sub-hollow portion GA includes: a first sub-hollow portion GA1, a second sub-hollow portion GA2, and a third sub-hollow portion GA3; the first sub-hollow portion GA1 extends along the first direction X; the second sub-hollow portion GA2 is connected to one end of the first sub-hollow portion GA1 and extends along the second direction Y; the third sub-hollow portion GA3 is connected to the other end of the first sub-hollow portion GA1 and extends along the second direction Y.

[0116] In a possible embodiment, in combination with Figures 1G and 1H, the orthographic projection of the second sub-hollow portion GA2 on the substrate 1 is located between the orthographic projections of a group of adjacent first branches TA2 and second branches TB2 on the substrate; for example, as shown in Figure 1G, the orthographic projection of the first second sub-hollow portion GA2 from the left on the substrate 1 is located between the first second branch TB2 from the left and the orthographic projection of the first first branch TA2 from the left on the substrate; the orthographic projection of the third sub-hollow portion GA3 on the substrate 1 is located between the orthographic projections of another group of adjacent first branches TA2 and second branch TB2 on the substrate 1, for example, as shown in Figure 1G, the orthographic projection of the first third sub-hollow portion GA3 from the left on the substrate 1 is located between the first first branch TA2 from the left and the orthographic projection of the second second branch TB2 from the left on the substrate.

[0117] In a possible implementation, as shown in FIG. 1D and FIG. 1G , the orthographic projection of the first sub-hollow portion GA1 on the substrate 1 and the gap between the end of the first branch portion TA2 and the second main portion TB1 are within the orthographic projection of the substrate 1 .

[0118] In the embodiment of the present disclosure, the hollow portion G22 includes: a plurality of sub-hollow portions GA arranged in sequence along the first direction X; the sub-hollow portion GA includes: a first sub-hollow portion GA1, a second sub-hollow portion GA2, and a third sub-hollow portion GA3, that is, the orthographic projection of the sub-hollow portion GA on the substrate 1 is U-shaped; the orthographic projection of the second sub-hollow portion GA2 on the substrate 1 is located between the orthographic projections of a group of adjacent first branches TA2 and second branches TB2 on the substrate; the orthographic projection of the third sub-hollow portion GA3 on the substrate 1 is located between the orthographic projections of another group of adjacent first branches TA2 and second branches TB2 on the substrate 1, so as to achieve the goal of making the hollow portion G22 located in the channel region of the transistor.

[0119] In one possible embodiment, as shown in conjunction with FIG1G and FIG1H , the minimum width a1 of the second sub-hollow portion GA2 in the first direction X is less than or equal to the minimum width a2 of the gap between the first branch TA2 and the second branch TB2 in the first direction X; and the minimum width a3 of the third sub-hollow portion GA3 in the first direction X is less than or equal to the minimum width a2 of the gap between the first branch TA2 and the second branch TB2 in the first direction X. In this way, when the light shielding layer G2 and the first source and drain electrode layer 23 deviate from alignment during the manufacturing process, the actual channel area in the hollow portion G22 does not fluctuate significantly with the manufacturing process, thereby preventing the detection performance of the first detection component 2 from being affected.

[0120] In a possible embodiment, as shown in Figures 1G and 1H, in the same first source and drain layer 23, the minimum spacing between any adjacent first branches TA2 and second branches TB2 in the first direction X is the same, that is, the same first detection component 2 includes N parallel sub-transistors, and each sub-transistor can be arranged at equal intervals along the first direction X.

[0121] In one possible embodiment, for the structure of the first detection component 2 shown in FIG3B, the display substrate further includes a second detection component 3, as shown in FIG2A to FIG2E, where FIG2A is a cross-sectional schematic diagram in which the first detection component and the second detection component are simultaneously provided, FIG2B is one of the stacked schematic diagrams of the second detection component, FIG2C is a single-film schematic diagram of the gate layer in FIG2B, FIG2D is a single-film schematic diagram of the second active layer in FIG2B, and FIG2E is a single-film schematic diagram of the second source and drain layer in FIG2B. The second detection component 3 includes:

[0122] The second active layer 31 is located on one side of the substrate 1;

[0123] The gate layer 32 is located on the side of the second active layer 31 facing the substrate 1. The orthographic projection of the gate layer 32 on the substrate 1 covers the orthographic projection of the second active layer 31 on the substrate 1, so that backlight irradiating the gate layer 32 is blocked by the gate layer 32.

[0124] The second source-drain layer 33 is located on a side of the second active layer 31 facing away from the substrate 1 .

[0125] In the embodiment of the present disclosure, the display substrate also includes a second detection component 3, which can be specifically a control detection component, wherein the gate layer 32 can be a whole layer of metal, which can block the backlight, and the backlight cannot be incident on the second active layer 31 of the second detection component 3. The size and / or shape of the second detection component 3 can be completely consistent with the first detection component 2, and the various ends of the second detection component 3 (including the gate end, the source end and the drain end) are applied with the same voltage as the various ends of the first detection component 2 (including the gate end, the source end and the drain end), which can eliminate the influence of other factors such as temperature on the current of the first detection component 2, thereby improving the detection accuracy of the first detection component 2.

[0126] In one possible embodiment, as shown in Figures 1A-1G and 2A-2E, the second active layer 31 is formed from the same layer and material as the first active layer 21; the gate layer 32 is formed from the same layer and material as the light shielding layer 22; and the second source and drain electrode 33 is formed from the same layer and material as the first source and drain electrode layer 23. In this way, the film layers of the second detection component 3 are formed simultaneously with the film layers of the first detection component 2, simplifying the display substrate manufacturing process while achieving accurate backlight detection.

[0127] In a possible implementation, the second detection component 3 may also be provided with a laminated transparent electrode layer on the side of the gate layer 32 facing the substrate 1 .

[0128] In one possible embodiment, the hollow portion G22 can be located in the middle area and edge area of ​​the light-shielding layer 2. Specifically, referring to Figures 3A-3F, the first active layer 21 includes: a plurality of first sub-active patterns 210 arranged in sequence along the first direction X; the light-shielding portion G21 includes: a plurality of sub-light-shielding portions GB arranged in sequence along the first direction X; the hollow portion G22 is located between adjacent sub-light-shielding portions GB; the orthographic projection area of ​​the first sub-active pattern 210 on the substrate 1 is larger than the orthographic projection area of ​​the sub-light-shielding portion GB on the substrate 1, and the orthographic projection of the first sub-active pattern 210 on the substrate 1 covers the orthographic projection of the sub-light-shielding portion GB on the substrate 1.

[0129] In the embodiment of the present disclosure, the first active layer 21 includes: a plurality of first sub-active patterns 210 arranged in sequence along the first direction X; the light-shielding portion G21 includes: a plurality of sub-light-shielding portions GB arranged in sequence along the first direction X; the orthographic projection of the first sub-active pattern 210 on the substrate 1 covers the orthographic projection of the sub-light-shielding portion GB on the substrate 1, that is, the area of ​​the sub-light-shielding portion GB is small, and the area of ​​the first sub-active pattern 210 is large, and the backlight can be incident on the sub-active 210 through the edge of the sub-light-shielding portion GB to realize the detection of the backlight, and the portion of the first sub-active pattern 210 blocked by the sub-light-shielding portion GB can avoid being exposed to backlight for a long time, slowing down the drift of the characteristics of the first detection component 2 caused by strong light, thereby extending the service life of the first detection component 2.

[0130] In one possible embodiment, as shown in Figures 3A-3F, the orthographic projection of the sub-shielding portion GB on the substrate 1 is block-shaped, specifically, for example, a rectangle. In one possible embodiment, the length of the sub-shielding portion GB in the second direction Y may be greater than the length of the sub-shielding portion GB in the first direction X.

[0131] In one possible embodiment, as shown in FIG3B and FIG3G , the minimum spacing b1 between adjacent sub-light-shielding portions GB in the first direction X is greater than the minimum spacing b2 between adjacent first sub-active patterns 210 in the first direction X. In this way, within a wiring region of the same area, the orthographic projection area of ​​the sub-light-shielding portions GB on the substrate 1 is smaller than the orthographic projection area of ​​the first sub-active pattern 210 on the substrate 1, thereby enabling backlight to be incident on the first sub-active pattern 210 through the edges of the sub-light-shielding portions GB.

[0132] In one possible embodiment, referring to FIG. 3B and FIG. 3G , the minimum spacing b2 between adjacent first sub-active patterns 210 in the first direction X is ≥ 2 μm, so as to ensure that the exposure device can expose the spacing and avoid the exposure device being unable to recognize the spacing when the spacing is less than 2 μm, resulting in the two sub-transistors being connected together and unable to form independent sub-transistors.

[0133] In one possible embodiment, as shown in Figures 3B and 3G , the transparent electrode layer G1 is a single, solid surface, covering the channel and source / drain electrode regions of each U-shaped sub-transistor. Furthermore, the transparent electrode layer G1 may extend beyond the first sub-active pattern 210 of the outermost U-shaped sub-transistor by a distance c3, where c3 ≥ 0 μm. The sub-light shielding portion GB cannot cover the edge of the first sub-active pattern 210 of each U-shaped sub-transistor. The first sub-active pattern 210 may extend beyond the sub-light shielding portion GB by a distance c4, where c4 ≥ 0 μm.

[0134] In one possible embodiment, referring to Figures 3B, 3F, and 3G, the first source and drain 23 includes: a plurality of first sub-source and drain groups 230 arranged in sequence along the first direction X; the first sub-source and drain group 230 includes: two second branches TB2 and one first branch TA2; the minimum gap c1 between two adjacent first sub-source and drain groups 230 is greater than the minimum gap c2 between the first sub-portion TA2 and the adjacent second branch TB2 in the first sub-source and drain group 230. In the embodiment of the present disclosure, the first detection component 2 is formed by N U-shaped sub-transistors connected in parallel, where N≥1. The difference from the embodiment shown in Figure 1B is that the sub-transistors are spaced a certain distance apart and are not closely arranged. That is, the embodiment shown in Figure 3B divides the first detection component 2 into multiple sub-transistors, specifically divides the first active layer 21 into multiple first sub-active patterns 210, and divides the shading layer into multiple sub-shading portions GB. The backlight is incident on the first sub-active pattern 210 through the edge of the sub-shading portion GB, thereby realizing backlight detection. Compared with the display substrate structure shown in Figure 1B, the display substrate structure shown in Figure 3B has a smaller area of ​​the first active layer 21 exposed to backlight, further slowing down the drift of the characteristics of the first detection component 2 caused by strong light, and further extending the service life.

[0135] In a possible implementation, referring to FIG. 3B and FIG. 3G , the orthographic projection of the first sub-active pattern 210 on the substrate 1 covers the orthographic projection of the first sub-source-drain electrode group 230 on the substrate 1 .

[0136] In one possible embodiment, for the structure of the first detection component 2 shown in FIG3B, the display substrate further includes a second detection component 3, as shown in FIG4A to FIG4E, where FIG4A is a cross-sectional schematic diagram in which the first detection component and the second detection component are simultaneously provided, FIG4B is one of the stacked schematic diagrams of the second detection component, FIG4C is a single-film schematic diagram of the gate layer in FIG4B, FIG4D is a single-film schematic diagram of the second active layer in FIG4B, and FIG4E is a single-film schematic diagram of the second source and drain layer in FIG4B. The second detection component 3 includes:

[0137] The second active layer 31 is located on one side of the substrate 1;

[0138] The gate layer 32 is located on the side of the second active layer 31 facing the substrate 1. The orthographic projection of the gate layer 32 on the substrate 1 covers the orthographic projection of the second active layer 31 on the substrate 1, so that backlight irradiating the gate layer 32 is blocked by the gate layer 32.

[0139] The second source-drain layer 33 is located on a side of the second active layer 31 facing away from the substrate 1 .

[0140] In the embodiment of the present disclosure, the display substrate also includes a second detection component 3, which can be specifically a control detection component, wherein the gate layer 32 can be a whole layer of metal, which can block the backlight, and the backlight cannot be incident on the second active layer 31 of the second detection component 3. The size and / or shape of the second detection component 3 can be completely consistent with the first detection component 2, and the various ends of the second detection component 3 (including the gate end, the source end and the drain end) are applied with the same voltage as the various ends of the first detection component 2 (including the gate end, the source end and the drain end), which can eliminate the influence of other factors such as temperature on the current of the first detection component 2, thereby improving the detection accuracy of the first detection component 2.

[0141] In one possible embodiment, as shown in Figures 3A-3F and 4A-4E, the second active layer 31 is formed from the same layer and material as the first active layer 21; the gate layer 32 is formed from the same layer and material as the light shielding layer 22; and the second source and drain electrode 33 is formed from the same layer and material as the first source and drain electrode layer 23. In this way, the film layers of the second detection component 3 are formed simultaneously with the film layers of the first detection component 2, thereby simplifying the display substrate manufacturing process while achieving accurate backlight detection.

[0142] For the structure of the first detection component 2 shown in Figure 3B, similar to the structure of the first detection component 2 shown in Figure 3B, the second detection component 3 of the same display substrate, combined with Figures 4A to 4E, can also divide the second detection component 3 into multiple sub-transistors, specifically dividing the second active layer 31 into multiple second sub-active patterns, and at the same time dividing the second source and drain 33 into multiple second sub-source and drain groups arranged in sequence along the first direction X, so as to achieve a structure similar to that of the first detection component 2 shown in Figure 3B. Of course, as a control detection component with the first detection component 2 shown in Figure 3B, the gate layer 32 in the second detection component 3 shown in Figure 4A needs to be a whole layer of metal.

[0143] In a possible implementation, the hollow portion G22 may also be completely located in the edge area of ​​the light-shielding layer 2. Specifically, as shown in FIG. 5A to FIG. 5F , the hollow portion G22 is located at the outer edge of the light-shielding portion G21.

[0144] In one possible embodiment, in combination with Figures 5A to 5F, in the first detection component 2, the first active layer 21 is a planar electrode, the light shielding layer G2 is a planar electrode, the orthographic projection area of ​​the first active layer 21 on the substrate is larger than the orthographic projection area of ​​the light shielding layer G2 on the substrate 1, and the orthographic projection of the first active layer 21 on the substrate 1 covers the orthographic projection of the light shielding layer G2 on the substrate. In the embodiment of the present disclosure, backlight can be incident on the first active layer 21 through the edge of the light shielding layer G2, thereby realizing the detection of backlight, and for the portion of the first active layer 21 that is blocked by the light shielding layer G2, it can avoid being exposed to backlight for a long time, slowing down the drift of the characteristics of the first detection component 2 caused by strong light, thereby extending the service life of the first detection component 2. Moreover, compared with the display substrate structure shown in Figure 3B, the display substrate structure shown in Figure 5B can further slow down the drift of the characteristics of the first detection component 2 caused by strong light, further extending the service life of the first detection component 2.

[0145] In a possible embodiment, as shown in FIG5A , the first active layer 21 is a planar electrode, and the light-shielding layer G2 is a planar electrode, but the light-shielding layer G2 cannot cover the edge of the first active layer 21 , and the first active layer 21 extends beyond the light-shielding layer G2 by a distance d, where d≥0 μm.

[0146] In one possible embodiment, for the structure of the first detection component 2 shown in FIG5B, the display substrate further includes a second detection component 3, as shown in FIG6A-FIG6E, where FIG6A is a cross-sectional schematic diagram in which the first detection component and the second detection component are simultaneously provided, FIG6B is one of the stacked schematic diagrams of the second detection component, FIG6C is a single-film schematic diagram of the gate layer in FIG6B, FIG6D is a single-film schematic diagram of the second active layer in FIG6B, and FIG6E is a single-film schematic diagram of the second source and drain layer in FIG6B. The second detection component 3 includes:

[0147] The second active layer 31 is located on one side of the substrate 1;

[0148] The gate layer 32 is located on the side of the second active layer 31 facing the substrate 1. The orthographic projection of the gate layer 32 on the substrate 1 covers the orthographic projection of the second active layer 31 on the substrate 1, so that backlight irradiating the gate layer 32 is blocked by the gate layer 32.

[0149] The second source-drain layer 33 is located on a side of the second active layer 31 facing away from the substrate 1 .

[0150] In the embodiment of the present disclosure, the display substrate also includes a second detection component 3, which can be specifically a control detection component, wherein the gate layer 32 can be a whole layer of metal, which can block the backlight, and the backlight cannot be incident on the second active layer 31 of the second detection component 3. The size and / or shape of the second detection component 3 can be completely consistent with the first detection component 2, and the various ends of the second detection component 3 (including the gate end, the source end and the drain end) are applied with the same voltage as the various ends of the first detection component 2 (including the gate end, the source end and the drain end), which can eliminate the influence of other factors such as temperature on the current of the first detection component 2, thereby improving the detection accuracy of the first detection component 2.

[0151] In one possible embodiment, as shown in Figures 5A-5F and 6A-6E, the second active layer 31 is formed from the same layer and material as the first active layer 21; the gate layer 32 is formed from the same layer and material as the light shielding layer 22; and the second source and drain electrode 33 is formed from the same layer and material as the first source and drain electrode layer 23. In this way, the film layers of the second detection component 3 are formed simultaneously with the film layers of the first detection component 2, simplifying the display substrate manufacturing process while achieving accurate backlight detection.

[0152] For the structure of the first detection component 2 shown in Figure 5B, similar to the structure of the first detection component 2 shown in Figure 5B, the second detection component 3 of the same display substrate, as shown in Figures 6A-6E, serves as a control detection component for the first detection component 2 shown in Figure 5B. In the second detection component 3 shown in Figure 6A, the pattern sizes and / or shapes of the other film layers except the gate layer 32 are consistent with those of the first detection component 2 shown in Figure 5B, and for the gate layer 32 of the second detection component 3 shown in Figure 6A, its orthographic projection area on the substrate 1 can cover the orthographic projection of the second active layer 22 on the substrate 1.

[0153] In a possible implementation, with reference to FIG. 1A to FIG. 1G , FIG. 3A to FIG. 3F , and FIG. 5A to FIG. 5F , the first detection component 2 is a brightness detection component, which can be used to detect the brightness of the backlight.

[0154] In a possible embodiment, in combination with Figures 7A and 7B, the first detection component 2 can also be a color temperature detection component, which can be used to detect the color temperature of the backlight; the first detection component 2 includes: a first sub-detection component 201, a second sub-detection component 202, and a third sub-detection component 203; the display substrate also includes: a color resist layer 4 located between the first detection component 2 and the side facing the backlight; the color resist layer 4 includes: a first color resist portion 41, a second color resist portion 42, and a third color resist portion 43; the orthographic projection of the first color resist portion 41 on the substrate 1 covers the orthographic projection of the first sub-detection component 201 on the substrate 1; the orthographic projection of the second color resist portion 42 on the substrate 1 covers the orthographic projection of the second sub-detection component 202 on the substrate; the orthographic projection of the third color resist portion 43 on the substrate 1 covers the orthographic projection of the third sub-detection component 203 on the substrate 1. In the embodiment of the present disclosure, when the first detection component 2 is a color temperature detection component, the display substrate may further include a color resist layer 4 for filtering monochromatic light for the first sub-detection component 201, the second sub-detection component 202 and / or the third sub-detection component 203 at different positions, thereby realizing monochromatic light detection at the corresponding positions.

[0155] In one possible embodiment, the first color resist portion 41 may be a red color resist, and the first sub-detection component 201 may be a detection component for detecting red light; the second color resist portion 42 may be a green color resist, and the second sub-detection component 202 may be a detection component for detecting green light; the third color resist portion 43 may be a blue color resist, and the third sub-detection component 203 may be a detection component for detecting blue light.

[0156] In one possible embodiment, when the first detection component 2 is a color temperature detection component, the specific structure of the first sub-detection component 201, the second sub-detection component 202, and the third sub-detection component 203 can be the structure shown in Figure 3A, that is, the first sub-detection component 201 (the second sub-detection component 202 and / or the third sub-detection component 203) is divided into a plurality of sub-transistors with a certain spacing, and the first sub-active pattern 210 is larger than the positive projection area of ​​the sub-light-shielding portion GB on the substrate 1, so that the backlight passes through the edge of the sub-light-shielding portion GB to illuminate the first sub-active pattern 210 to achieve backlight detection, as shown in Figure 7A or Figure 7B; in another possible embodiment, for the first detection component When component 2 is a color temperature detection component, the specific structure of the first sub-detection component 201, the second sub-detection component 202, and the third sub-detection component 203 may also be the structure shown in Figure 1A, that is, the light-shielding layer G2 is grooved in the corresponding channel area to achieve backlight detection; in another possible embodiment, when the first detection component 2 is a color temperature detection component, the specific structure of the first sub-detection component 201, the second sub-detection component 202, and the third sub-detection component 203 may also be the structure shown in Figure 5A, that is, the area of ​​the light-shielding layer G2 is smaller than the area of ​​the first active layer 21, so that the backlight passes through the edge of the light-shielding layer G2 to illuminate the first active layer 2 to achieve backlight detection.

[0157] In a possible embodiment, referring to Figures 1A to 1G, the display substrate may further include: a first lead 25 electrically connected to the shading layer G2 and / or the transparent electrode layer G1 in the first detection component 2 and extending along the second direction, a second lead 26 electrically connected to the second main part TB1 and extending along the second direction Y, and a third lead 27 electrically connected to the first main part TA1 and extending along the second direction Y, so as to electrically connect different ends of the first detection component 2 to an external circuit.

[0158] In one possible embodiment, the color resist layer 4 may be located between the first detection component 2 and the substrate 1, as shown in FIG7B ; in another possible embodiment, the color resist layer 4 may be located on the side of the substrate 1 away from the first detection component 2, as shown in FIG7A .

[0159] In a specific implementation, the material of the color resist layer 4 can be the same as the material of the color filter layer used in the display area of ​​the display substrate, or other materials can be used.

[0160] As shown in Figures 1A-1G, 3A-3F, and 5A-5F, the first source-drain electrode layer 23 is located between the first active layer 21 and the gate structure layer 22. The first detection component 2 also includes an ohmic contact layer 24 located on the side of the first active layer 21 facing the first source-drain electrode layer 23. The pattern of the ohmic contact layer 24 is consistent with the pattern of the first source-drain electrode layer 23. In the embodiment of the present disclosure, the first source-drain electrode layer 23 and the ohmic contact layer 24 form an ohmic contact. The ohmic contact serves as a transition between the first detection component 2 and the external signal. The first detection component 2 also includes the ohmic contact layer 24. The ohmic contact layer 24 can reduce the resistance between the first active layer 21 and the first source-drain electrode layer 23, thereby improving the performance of the first detection component 2.

[0161] In a possible implementation, the material of the ohmic contact layer 24 may include: n+a-Si etching,

[0162] Based on the same inventive concept, an embodiment of the present disclosure further provides a display panel, which includes the display substrate provided by the embodiment of the present disclosure.

[0163] Based on the same inventive concept, an embodiment of the present disclosure further provides a display device, as shown in FIG8 , which includes a display panel as provided in an embodiment of the present disclosure. The display panel may include a display substrate 8 and an opposing substrate 9 disposed opposite the display substrate 8, and further includes a backlight module 6 located on the backlight side of the display panel. Ambient light 70 may be blocked by the opposing substrate 9, and light from the backlight module 6 may partially illuminate the first detection component 2. Thus, the backlight brightness and / or color temperature may be detected by the first detection component 2.

[0164] In one possible implementation, in the embodiment of the present disclosure, the display substrate may be an array substrate; as shown in FIG2A , FIG4A , and FIG6A , the display device may further include an opposing substrate disposed opposite the array substrate, the opposing substrate including an opposing substrate 90 and a black matrix 91 located on a side of the opposing substrate 90 facing the array substrate. The black matrix 91 is provided as a light shielding layer at positions corresponding to the first detection component 2 and the second detection component 3 to prevent external ambient light from irradiating the first detection component 2 and the second detection component 3.

[0165] In a possible implementation, the display panel provided in the embodiment of the present disclosure may be a liquid crystal display panel.

[0166] In a specific implementation, the display substrate may be provided with only a first detection component for detecting backlight brightness, or may be provided with only a first detection component for detecting backlight color temperature, or may be provided with both a first detection component for detecting backlight brightness and a first detection component for detecting backlight color temperature.

[0167] In a possible implementation, referring to FIG. 8 and FIG. 9 , the display device further includes: a processing component 5 ; the processing component 5 is configured to adjust the brightness and / or color temperature of the backlight module 6 according to the information detected by the first detection component 2 .

[0168] In one possible embodiment, as shown in FIG8 , the display substrate may include a display area and a non-display area located outside the display area. The first detection component 2 may be disposed in the non-display area of ​​the display substrate. Specifically, the first detection component 2 may be disposed in a binding area of ​​the display substrate. In another possible embodiment, the first detection component 2 may also be disposed in an area outside the pixel area of ​​the display area.

[0169] In a possible implementation, the processing component 5 may be a system on chip (SOC) or a logic board (Timer Control Register, TCON).

[0170] The operating principle of the first detection component 2 can be as follows: the first detection component 2 is fabricated on the display substrate. The carrier concentration within the channel of the first detection component 2 is significantly affected by light. When a fixed voltage is applied, the current within the channel changes as the brightness of the light irradiating the channel of the first detection component 2 changes. The first detection component 2 is connected in series with a fixed resistor. The current in the first detection component 2 changes with the brightness of the light, and the voltage divider across the resistor also changes. The change in brightness is measured using voltage, which is converted via an analog-to-digital converter (ADC) and sent to the TCON, thereby achieving dynamic adjustment of the backlight brightness and / or color temperature. A second detection component 3 is also provided in a control group. The size and / or shape of the second detection component 3 in the control group are identical to those of the light-sensitive first detection component 2, and the same voltage is applied to the gate / source / drain terminals, thereby eliminating the influence of other factors such as temperature on the current of the first detection component 2.

[0171] Specifically, in combination with Figure 8 or Figure 9, the changes in backlight brightness and / or color temperature can be detected by the first detection component 2 integrated in the display substrate. The current of the first detection component 2 changes with the backlight, and the current is converted into voltage, which is fed back to the SOC or TCON for brightness and color temperature confirmation. The SOC or TCON outputs corresponding brightness and color temperature calibration signals.

[0172] Specifically, the process flow for the first detection component 2 can be as follows: first, a transparent electrode layer G1 is formed on the substrate 1; then, a light-shielding layer G2 is formed. This light-shielding layer G2 may include a light-proof metal material such as Mo, Al, or Cu; then, SiNx is used as an insulating layer, followed by an amorphous silicon layer as the first active layer 21; then, n+ ions are doped on the surface of the first active layer 21 to form an ohmic contact layer 24; then, a first source-drain layer 23 is formed, which serves as the source and drain of the first detection component 2. This metal layer may include a light-proof metal material such as Mo, Al, or Cu. Finally, an insulating layer is formed as a protective layer. After etching the first source-drain layer 23, the ohmic contact layer 24 is etched again. This removes the pattern of the ohmic contact layer 24 from the locations where the first source-drain layer 23 pattern is not present. In other words, there is no pattern of the ohmic contact layer 24 within the channel of the first detection component 2. There is an ohmic contact layer 24 pattern under the source (Source) and drain (Drain) metal of the first detection component 2. The first source and drain layer 23 and the ohmic contact layer form an ohmic contact. The ohmic contact is the transition area between the first detection component 2 and the external signal.

[0173] Based on the same inventive concept, the embodiment of the present disclosure further provides a backlight adjustment method for a display device as provided in the embodiment of the present disclosure, as shown in FIG10 , which includes:

[0174] Step S100: controlling the first detection component to perform light detection to obtain first information;

[0175] Step S200: adjusting the backlight of the backlight module according to the first information detected by the first detection component, and performing display with the adjusted backlight.

[0176] In a possible implementation, in step S200, adjusting the backlight of the backlight module according to the first information detected by the first detection component includes:

[0177] Step S210: controlling the second detection component to perform light detection to obtain second information;

[0178] Step S220: Adjust the backlight of the backlight module based on the first information and the second information. The second information may be current information caused by other factors such as temperature. By removing the current information caused by the second information and not by brightness and / or color temperature from the first information, the influence of other factors such as temperature on the current information of the first detection component 2 is eliminated.

[0179] Although the preferred embodiments of the present invention have been described, those skilled in the art may make additional changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the present invention.

[0180] Obviously, those skilled in the art may make various changes and modifications to the embodiments of the present invention without departing from the spirit and scope of the embodiments of the present invention. Thus, if such changes and modifications of the embodiments of the present invention fall within the scope of the claims and their equivalents, the present invention is intended to include such changes and modifications.

Claims

1. A display substrate, wherein, Comprising: a substrate, and at least one first detection component located on one side of the substrate; the first detection component is used for detecting the backlight; wherein, the first detection component includes: a first active layer located on one side of the substrate; a gate structure layer located on the side of the first active layer facing the substrate, the gate structure includes: a transparent electrode layer and a light-shielding layer arranged in a stack; the light-shielding layer has a light-shielding portion and a hollow portion, so that part of the backlight irradiated on the light-shielding layer passes through the hollow portion and part is blocked by the light-shielding portion.

2. The display substrate according to claim 1, wherein, the first detection component further includes: a first source-drain layer; the first source-drain layer includes: a first pole and a second pole arranged oppositely; the first pole includes: a first main portion extending along a first direction, and a plurality of first branch portions extending from the first main portion along a second direction; the second pole includes: a second main portion extending along the first direction, and a plurality of second branch portions extending from the second main portion along the second direction; the first branch portion and the second branch portion are arranged in a cross manner.

3. The display substrate according to claim 2, wherein, The orthographic projection of the gap between the first branch portion and the second branch portion on the substrate covers the orthographic projection of the hollow portion on the substrate.

4. The display substrate according to claim 3, wherein, The hollow portion includes: a plurality of sub-hollow portions arranged in sequence along the first direction; the sub-hollow portion includes: a first sub-hollow portion, a second sub-hollow portion, and a third sub-hollow portion; the first sub-hollow portion extends along the first direction; the second sub-hollow portion is connected to one end of the first sub-hollow portion and extends along the second direction; the third sub-hollow portion is connected to the other end of the first sub-hollow portion and extends along the second direction.

5. The display substrate according to claim 4, wherein, The orthographic projection of the second sub-hollow portion on the substrate is located between the orthographic projections of a group of adjacent first branch portions and second branch portions on the substrate; The orthographic projection of the third sub-hollow portion on the substrate is located between the orthographic projections of another group of adjacent first branch portions and second branch portions on the substrate.

6. The display substrate according to claim 4 or 5, wherein The minimum width of the second sub-hollow portion in the first direction is less than or equal to the minimum width of the gap between the first branch portion and the second branch portion in the first direction; The minimum width of the third sub-hollow portion in the first direction is less than or equal to the minimum width of the gap between the first branch portion and the second branch portion in the first direction.

7. The display substrate according to claim 2, wherein, The first active layer includes: a plurality of first sub-active patterns arranged in sequence along the first direction; the light-shielding portion includes: a plurality of sub-light-shielding portions arranged in sequence along the first direction; the hollow portion is located between adjacent sub-light-shielding portions; The orthographic projection area of the first sub-active pattern on the substrate is larger than the orthographic projection area of the sub-light-shielding portion on the substrate, and the orthographic projection of the first sub-active pattern on the substrate covers the orthographic projection of the sub-light-shielding portion on the substrate.

8. The display substrate according to claim 7, wherein, The minimum distance between adjacent sub-light-shielding portions in the first direction is greater than the minimum distance between adjacent first sub-active patterns in the first direction.

9. The display substrate according to claim 7 or 8, wherein The first source-drain includes: a plurality of first sub-source-drain groups arranged in sequence along the first direction; The first sub-source-drain group includes: two second branches and one first branch; the minimum gap between two adjacent first sub-source-drain groups is larger than the minimum gap between the first sub-portion and the adjacent second branch in the first sub-source-drain group.

10. The display substrate according to claim 9, wherein, The orthographic projection of the first sub-active pattern on the substrate covers the orthographic projection of the first sub-source-drain electrode group on the substrate.

11. The display substrate according to claim 2, wherein, The hollow portion is located at the outer edge of the light shielding portion.

12. The display substrate according to claim 11, wherein, In the first detection component, the first active layer is a planar electrode, the light-shielding layer is a planar electrode, the orthographic projection area of ​​the first active layer on the substrate is larger than the orthographic projection area of ​​the light-shielding layer on the substrate, and the orthographic projection of the first active layer on the substrate covers the orthographic projection of the light-shielding layer on the substrate.

13. The display substrate according to any one of claims 1-12, wherein, The material of the light shielding layer is metal.

14. The display substrate according to any one of claims 1-13, wherein, The first detection component is a brightness detection component.

15. The display substrate according to any one of claims 1 to 13, wherein, The first detection component is a color temperature detection component; the first detection component includes: a first sub-detection component, a second sub-detection component, and a third sub-detection component; The display substrate further comprises: a color resistance layer located on the side of the first detection component facing the backlight; the color resistance layer comprises: a first color resistance portion, a second color resistance portion, and a third color resistance portion; The orthographic projection of the first color resistance portion on the substrate covers the orthographic projection of the first sub-detection component on the substrate; the orthographic projection of the second color resistance portion on the substrate covers the orthographic projection of the second sub-detection component on the substrate; the orthographic projection of the third color resistance portion on the substrate covers the orthographic projection of the third sub-detection component on the substrate.

16. The display substrate according to claim 15, wherein, The color resist layer is located between the first detection component and the substrate; or, the color resist layer is located on a side of the substrate away from the first detection component.

17. The display substrate according to any one of claims 2-16, wherein, The first source-drain electrode layer is located between the first active layer and the gate structure layer; The first detection component further includes: an ohmic contact layer located on a side of the first active layer facing the first source and drain layer; A pattern of the ohmic contact layer is consistent with a pattern of the first source-drain electrode layer.

18. The display substrate according to any one of claims 1-17, wherein, The display substrate further includes a second detection component, wherein the second detection component includes: A second active layer, located on one side of the substrate; The gate layer is located on the side of the second active layer facing the substrate, and the positive projection of the gate layer on the substrate covers the positive projection of the second active layer on the substrate, so that the gate layer can be illuminated by the substrate. The backlight of the gate layer is blocked by the gate layer; The second source-drain electrode layer is located on a side of the second active layer away from the substrate.

19. The display substrate according to claim 18, wherein, The second active layer is made of the same layer and material as the first active layer; the gate layer is made of the same layer and material as the light shielding layer; and the second source and drain electrode layer is made of the same layer and material as the first source and drain electrode layer.

20. A display panel, wherein, Comprising the display substrate as described in any one of claims 1-19.

21. A display device, wherein, It comprises the display panel as claimed in claim 20, and also comprises a backlight module located on the backlight side of the display panel.

22. The display device according to claim 21, wherein, The display device further includes: a processing component; the processing component is configured to adjust the brightness and / or color temperature of the backlight module according to the information detected by the first detection component.

23. A backlight adjustment method for a display device as claimed in claim 21 or 22, wherein, include: Control the first detection component to perform optical detection and obtain the first information; Adjust the backlight of the backlight module according to the first information detected by the first detection component, and perform display with the adjusted backlight.

24. The backlight adjustment method according to claim 23, wherein, The adjusting the backlight of the backlight module according to the first information detected by the first detection component includes: Control the second detection component to perform optical detection and obtain the second information; Adjust the backlight of the backlight module according to the first information and the second information.

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