Top gas inlet gas-uniformization structure and plasma etcher
By adopting a combined structure of the central air intake assembly and the edge air intake assembly in the plasma etching machine, the uniform distribution of process gas is improved, the problem of uneven etching rate on the wafer surface is solved, and higher etching rate uniformity and stability are achieved.
Patent Information
- Application Number
- PCT/CN2024/121009
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2023-12-26
- Filing Date
- 2024-09-25
- Publication Date
- 2025-07-03
AI Technical Summary
Existing plasma etching machines have uneven etching rates at the edges and centers of the wafer, resulting in a slow etching rate near the half-diameter diameter.
Using a combined structure of the central air intake assembly and the edge intake assembly, the design of the central jet passage and multiple edge jet passages improves the intake uniformity of the plasma reaction chamber and ensures the uniform distribution of process gas on the wafer surface.
It improves the uniformity of the etching rate of the plasma etching machine, reduces the unevenness of the wafer surface etching rate, and improves the stability and consistency of the etching process.
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Figure CN2024121009_03072025_PF_FP_ABST
Abstract
Description
Upper air intake and uniform air structure and plasma etching machine
[0001] This application claims priority to the Chinese patent application filed with the China Patent Office on December 26, 2023, with application number 2023118398440 and invention name “A Upper Air Inlet and Uniform Gas Structure and Plasma Etching Machine”, the entire contents of which are incorporated by reference into this application. Technical Field
[0002] The present invention relates to the technical field of semiconductor processing, and in particular to an upper air intake and uniform air structure and a plasma etcher. Background Art
[0003] Currently, the edge nozzles of plasma etchers are located too far from the wafer, which tends to affect only the wafer edge, resulting in a faster edge etching rate. The center nozzles of plasma etchers also tend to focus their jets too closely on the wafer center, which tends to cause a faster center etching rate. The combined effect of these two factors tends to slow down the etching rate near half the wafer diameter.
[0004] Therefore, how to improve the uniformity of the etching rate of the plasma etcher has become a technical problem that needs to be solved urgently by those skilled in the art.
[0005] Summary of the Invention
[0006] The invention provides an upper air intake uniformity structure and a plasma etcher to improve the uniformity of the etching rate of the plasma etcher.
[0007] In order to achieve the above object, the present invention provides the following technical solutions:
[0008] In a first aspect, the present invention provides an upper air intake and uniform air flow structure, comprising a central air intake assembly and an edge air intake assembly, wherein the central air intake assembly forms a plurality of central jet passages, the edge air intake assembly forms a plurality of edge jet passages, and the plurality of edge jet passages are arranged around the central jet passage.
[0009] Optionally, in the upper air intake and uniform air flow structure, the distances between the plurality of edge air jet passages and the central air jet passage are the same or different.
[0010] Optionally, in the upper air intake and uniform air flow structure, the included angles of two adjacent edge air jet passages among the plurality of edge air jet passages are the same or different.
[0011] Optionally, in the above-mentioned upper air intake and uniform air flow structure, the central air intake component includes a first spray hole and a second spray hole, and the second spray holes are arranged around the first spray holes.
[0012] Optionally, in the above-mentioned upper air inlet and uniform air structure, the edge air inlet component includes an air slot plate, and the edge gas source provides process gas to the dielectric window through the air slot plate.
[0013] Optionally, in the above-mentioned upper air inlet and uniform air structure, the air slot plate includes an air source hole, a connecting hole and an air distribution slot, wherein the air source hole is used to communicate with the edge air source; the connecting hole connects the air source hole and the air distribution slot;
[0014] The medium window includes an air-uniform hole and a third nozzle hole, the air-dividing groove is connected to the air-uniform hole, and the third nozzle hole is parallel to the axis of the medium window or inclined relative to the axis of the medium window;
[0015] A uniform air hole and a third nozzle hole form an edge jet passage; or
[0016] There are a plurality of uniform air holes extending radially along the dielectric window, and one uniform air hole can be connected with a plurality of third air injection holes to form an edge air injection passage.
[0017] Optionally, in the above-mentioned upper air intake and uniform air structure, the air source hole extends along the axial direction or radial direction of the air groove plate.
[0018] Optionally, in the above-mentioned upper air intake and uniform air structure, the air dividing groove is arranged in a ring shape between the air groove plate and the dielectric window, the air dividing groove is arranged on the hole wall of the air groove plate, and the air uniform air holes are arranged on the peripheral surface of the dielectric window.
[0019] Optionally, in the above-mentioned upper air intake and uniform air flow structure, the edge air intake assembly further includes a hoop plate, which tightly embraces the outer periphery of the medium window and is fixed to the air groove plate.
[0020] Optionally, in the above-mentioned upper air intake and uniform air structure, one of the hoop plate and the dielectric window is provided with a protrusion, and the other of the two is provided with a recessed portion matching the protrusion.
[0021] Optionally, in the above-mentioned upper air intake and uniform air flow structure, the edge air intake assembly further includes a pressure plate, which is pressed on the hoop plate and connected to the air groove plate.
[0022] Optionally, in the above-mentioned upper air intake and uniform air flow structure, the edge air intake assembly may further include an inner lining plate, and the inner lining plate is wrapped around the opening of the air groove plate.
[0023] Optionally, in the above-mentioned upper air intake and uniform air structure, the inner lining plate includes a first inner lining segment extending axially and a second inner lining segment extending radially, wherein the first inner lining segment corresponds to the hole wall of the air groove plate, and the second inner lining segment overlaps all or part of the plate surface of the air groove plate.
[0024] Optionally, in the above-mentioned upper air intake and uniform air structure, a guide section is provided at the portion where the second liner segment and the first liner segment are connected.
[0025] Optionally, in the above-mentioned upper air intake and uniform air structure, the dielectric window includes a recessed portion and a crimping portion, the recessed portion is arranged on the peripheral surface of the dielectric window to cooperate with the raised portion of the hoop plate; the crimping portion extends outward from the main body of the dielectric window to be crimped by the hoop plate.
[0026] Optionally, in the above-mentioned upper air intake and uniform air structure, after the medium window is installed in place on the air slot plate, the plate surface of the air slot plate is flush with the end surface of the crimping portion, so that the hoop plate can be crimped onto the air slot plate and the crimping portion at the same time.
[0027] Optionally, in the above-mentioned upper air intake and uniform air structure, the air distribution groove is located between the hole wall of the air groove plate and the peripheral surface of the crimping portion.
[0028] Optionally, in the above-mentioned upper air intake and uniform air structure, the dielectric window further includes a corner portion, and the air groove plate is provided with an annular protrusion that cooperates with the corner portion.
[0029] Optionally, in the above-mentioned upper air intake and uniform air structure, a seal is provided between any two of the central air intake assembly, the edge air intake assembly and the dielectric window.
[0030] In a second aspect, the present invention provides a plasma etcher, comprising a plasma reaction chamber, a dielectric window, a central gas source, an edge gas source and an upper gas inlet uniformizing structure as described above, wherein the dielectric window encloses the top of the plasma reaction chamber, and the central gas inlet component of the upper gas inlet uniformizing structure is arranged at the center of the dielectric window and is connected to the central gas source; the central gas source uniformly sprays process gas to the middle of the plasma reaction chamber through the central gas inlet component; the edge gas inlet component of the upper gas inlet uniformizing structure is arranged at the edge of the dielectric window and is connected to the edge gas source; the edge gas source uniformly sprays process gas to the edge of the plasma reaction chamber through the edge gas inlet component.
[0031] Optionally, in the above plasma etcher, the dielectric window and / or the central air inlet assembly are made of non-metallic material.
[0032] As can be seen from the above technical solution, the central gas inlet assembly of the present invention includes a central gas injection passage and multiple edge gas injection passages. The central gas injection passage allows for central process gas flow, while the multiple edge gas injection passages allow for peripheral process gas flow. Compared to the prior art, this improves the uniformity of gas inlet to the plasma reaction chamber, thereby improving the uniformity of the plasma etcher's etching rate. BRIEF DESCRIPTION OF THE DRAWINGS
[0033] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some examples or embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on the provided drawings without inventive work, and the present invention can also be applied to other similar scenarios based on the provided drawings. Unless otherwise apparent from the language context or otherwise explained, the same reference numerals in the figures represent the same structure or operation.
[0034] FIG1 is a schematic diagram of a plasma etcher provided in an embodiment of the present invention;
[0035] FIG2 is a schematic diagram of another plasma etcher provided in an embodiment of the present invention;
[0036] FIG3 is a bottom view of a dielectric window provided with a central air inlet assembly and an edge air inlet assembly installed according to an embodiment of the present invention;
[0037] FIG4 is a cross-sectional view of section AA in FIG3 ;
[0038] FIG5 is an enlarged view of portion B in FIG4 ;
[0039] FIG6 is an enlarged view of portion C in FIG4 ;
[0040] FIG7 is a perspective view of a dielectric window provided in an embodiment of the present invention;
[0041] FIG8 is a cross-sectional view of a dielectric window provided in an embodiment of the present invention;
[0042] FIG9 is an enlarged view of portion D in FIG8 ;
[0043] FIG10 is an enlarged view of portion E in FIG8 ;
[0044] In the figure, 1-plasma reaction chamber, 2-dielectric window, 3-shielding cover, 4-plasma coupling coil, 5-excitation RF power supply, 6-excitation matching network, 7-bias electrode, 8-bias RF power supply, 9-bias matching network, 10-vacuum pump, 11-pressure control valve, 12-center gas source, 13-center nozzle, 14-edge gas source, 15-edge nozzle;
[0045] 100-wafer, 200-plasma;
[0046] 21-recessed portion, 22-pressing portion, 23-corner portion, 24-air uniformity hole, 25-third spray hole;
[0047] 130-center air intake assembly, 150-edge air intake assembly;
[0048] 151-air groove plate, 152-hoop plate, 153-pressing plate, 154-lining plate;
[0049] 131-first spray hole, 132-second spray hole;
[0050] 1511-gas source hole, 1512-connecting hole, 1513-gas distribution groove;
[0051] 1541-first lining segment, 1542-second lining segment, 1543-guide segment;
[0052] 1551 - first sealing ring, 1552 - second sealing ring, 1553 - third sealing ring, 1554 - fourth sealing ring, 1555 - fifth sealing ring. DETAILED DESCRIPTION
[0053] The present invention will be further described in detail below with reference to the accompanying drawings and examples. It will be understood that the specific embodiments described herein are intended only to explain the relevant invention and are not intended to limit the invention. The embodiments described are merely some embodiments of the present invention, not all embodiments. All other embodiments derived by persons of ordinary skill in the art based on the embodiments of the present invention without creative effort are intended to fall within the scope of protection of the present invention.
[0054] Plasma etcher, also known as plasma plane etcher, plasma etcher, plasma surface treatment instrument, plasma cleaning system, etc., is used in the semiconductor industry. Inductively coupled plasma (ICP) etching is the result of the combined action of chemical and physical processes. Its basic principle is that under vacuum and low pressure, the radio frequency generated by the radio frequency power supply is output to the annular coupling coil, and a certain proportion of mixed etching gas is coupled through glow discharge to generate high-density plasma. Under the action of the radio frequency (RF) of the lower bias electrode, these plasmas bombard the wafer surface, breaking the chemical bonds of the semiconductor in the wafer pattern area, generating volatile substances with the etching gas, which are separated from the wafer in the form of gas and are extracted from the vacuum pipeline.
[0055] Referring to FIG1 , FIG1 shows a schematic structural diagram of a plasma etcher.
[0056] The plasma etcher shown in the figure includes a plasma reaction chamber 1, a shielding cover 3, a dielectric window 2, a plasma coupling coil 4, an excitation RF power supply 5, an excitation matching network 6, a bias electrode 7, a bias RF power supply 8, a bias matching network 9, a vacuum pump 10, a pressure control valve 11, a central gas source 12, a central nozzle 13, an edge gas source 14 and an edge nozzle 15.
[0057] The plasma reaction chamber 1 , the dielectric window 2 and the shielding cover 3 are arranged in sequence from bottom to top.
[0058] The plasma coupling coil 4 is arranged on the dielectric window 2 and located in the shielding cover 3; after the process gas provided by the central gas source 12 and the edge gas source 14 is sprayed into the plasma reaction chamber 1 through the central nozzle 13 and the edge nozzle 15, the exciting RF power supply 5 controls the plasma coupling coil 4 through the exciting matching network 6 to generate a high-density plasma 200.
[0059] The bias electrode 7 is located in the plasma reaction chamber 1 , and the bias RF power supply 8 controls the bias electrode 7 through a bias matching network 9 and provides a bias voltage for the wafer 100 placed on the bias electrode 7 .
[0060] The vacuum pump 10 is connected to the plasma reaction chamber 1 through a vacuum pipe. A pressure control valve 11 is arranged on the vacuum pipe, and the conduction state of the vacuum pipe is switched by the pressure control valve 11.
[0061] The central gas source 12 is connected to a central nozzle 13 arranged in the middle of the dielectric window 2 , and the edge gas source 14 is connected to an edge nozzle 15 arranged at the edge of the plasma reaction chamber 1 .
[0062] The etching process of the above plasma etcher is specifically as follows:
[0063] The process gas provided by the central gas source 12 and the edge gas source 14 is sprayed into the plasma reaction chamber 1 through the central nozzle 13 and the edge nozzle 15. The excitation RF power supply 5 controls the operation of the plasma coupling coil 4 through the excitation matching network 6. The process gas entering the plasma reaction chamber generates plasma 200 under the coupling action of the plasma coupling coil 4. The plasma 200 is accelerated by the bias electrode 7 to bombard the wafer 100 to etch the wafer 100. The volatile substances generated during the etching process are extracted by the vacuum pump 10.
[0064] Currently, the edge nozzle 15 of the plasma 200 etcher is located far from the wafer 100, which tends to affect only the edge of the wafer 100, resulting in a faster edge etching rate. The center nozzle 13 of the plasma 200 etcher sprays air too closely toward the center of the wafer 100, which tends to cause a faster etching rate at the center of the wafer 100. The combined effect of these two factors tends to slow down the etching rate near half the diameter of the wafer 100.
[0065] In order to solve the above technical problems, an embodiment of the present invention discloses a central air intake assembly 130, which is applied to a plasma etcher. By improving the air intake condition of the plasma etcher, the uniformity of the etching rate of the plasma etcher is improved.
[0066] Referring to FIG. 2 , FIG. 2 shows a schematic structural diagram of another plasma etching machine.
[0067] The illustrated plasma etcher may include a plasma reaction chamber 1, a dielectric window 2, a central gas source 12, an edge gas source 14, a central gas inlet assembly 130, and an edge gas inlet assembly 150, wherein the dielectric window 2 encloses the top of the plasma reaction chamber 1, the central gas inlet assembly 130 is arranged at the center of the dielectric window 2, and is connected to the central gas source 12; the central gas source 12 uniformly sprays process gas to the middle of the plasma reaction chamber 1 through the central gas inlet assembly 130; the edge gas inlet assembly 150 is arranged at the edge of the dielectric window 2, and is connected to the edge gas source 14; the edge gas source 14 uniformly sprays process gas to the edge of the plasma reaction chamber 1 through the edge gas inlet assembly 150; in the example of the present invention, by improving the uniformity of the central gas inlet and the uniformity of the edge gas inlet, the uniformity of the plasma 200 in the etching process of the plasma etcher is improved as a whole, thereby improving the uniformity of the etching rate of the plasma etcher.
[0068] It should be noted that since both the central air inlet assembly 130 and the edge air inlet assembly 150 are located above the plasma reaction chamber 1 and at the top of the entire plasma etcher, the central air inlet assembly 130 and the edge air inlet assembly 150 can be understood as upper air inlet and uniform gas structures. Therefore, the central air inlet assembly 130 and the edge air inlet assembly 150 described below are both upper air inlet and uniform gas structures.
[0069] In conjunction with Figure 2, refer to Figures 3 to 6. Figure 3 shows a bottom view of the dielectric window 2 with the central air inlet assembly 130 installed; Figure 4 is a sectional view of the AA section in Figure 3; Figure 5 is an enlarged view of part B in Figure 4; and Figure 6 is an enlarged view of part C in Figure 4.
[0070] In this example of the present invention, the central gas inlet assembly 130 is embedded into the dielectric window 2 from the first end surface of the dielectric window 2 and is connected to the central gas source 12. The end surface of the central gas inlet assembly 130 located within the plasma reaction chamber 1 includes a first nozzle 131 located in the center and a second nozzle 132 located at the edge. The first nozzle 131 and / or the second nozzle 132 can extend along the axial direction of the central gas inlet assembly 130, or the first nozzle 131 and / or the second nozzle 132 can be arranged at an angle relative to the axis of the central gas inlet assembly 130. By adjusting the number, spacing, and inclination angle of the first nozzle 131 and / or the second nozzle 132, the first nozzle 131 is positioned in a position with a strong electric field, which prevents the ejected process gas from being directly withdrawn or having low ionization efficiency, thereby meeting different process requirements.
[0071] It can be understood that the dielectric window 2 has a first end face and a second end face arranged opposite to each other, wherein the second end face of the dielectric window 2 is closer to the plasma reaction chamber 1 than the first end face, and the first end face of the dielectric window 2 is farther away from the plasma reaction chamber 1 than the second end face.
[0072] In an example of the present invention, the edge gas inlet assembly 150 may include a gas slot plate 151, through which the edge gas source 14 may provide a stable process gas to the dielectric window 2, and corresponding holes and nozzles may be provided on the dielectric window 2 to spray the process gas in the area between the center and the edge, thereby improving the uniformity of the gas.
[0073] It can be understood that the air slot plate 151 may have a first plate surface and a second plate surface arranged opposite to each other in the axial direction, wherein the second plate surface of the air slot plate 151 is closer to the plasma reaction chamber 1 than the first plate surface, and the first plate surface of the air slot plate 151 is farther away from the plasma reaction chamber 1 than the second plate surface.
[0074] Specifically, the gas groove plate 151 includes a gas source hole 1511, a connecting hole 1512 and a gas separation groove 1513, wherein the gas source hole 1511 is used to connect with the edge gas source 14; the connecting hole 1512 connects the gas source hole 1511 and the gas separation groove 1513; the gas separation groove 1513 is connected with the uniform gas hole 24 of the medium window 2 to provide stable process gas for the medium window 2.
[0075] The gas source hole 1511 can extend in the axial direction or radial direction of the gas slot plate 151. When the gas source hole 1511 extends in the axial direction, the communication hole 1512 extends in the radial direction, the opening of the gas source hole 1511 is located on the second end surface of the gas slot plate 151, and the edge gas source 14 interfaces with the gas source hole 1511 from the second end surface. When the gas source hole 1511 extends in the radial direction, the communication hole 1512 extends in the axial direction, the opening of the gas source hole 1511 is located on the circumferential surface of the gas slot plate 151, and the edge gas source 14 interfaces with the gas source hole 1511 from the circumferential surface.
[0076] It is understandable that the air slot plate 151 may have a peripheral surface and a hole wall connecting the first plate surface and the second plate surface, wherein the peripheral surface, the first plate surface and the second plate surface form the external shape of the air slot plate 151, and the hole wall forms an opening through the medium window 2.
[0077] In some examples of the present invention, the gas dividing groove 1513 is arranged in an annular shape between the gas groove plate 151 and the dielectric window 2. As shown in FIG6 , the gas dividing groove 1513 is arranged on the hole wall of the gas groove plate 151, and the gas uniforming holes 24 connected to the gas dividing groove 1513 are arranged on the circumferential surface of the dielectric window 2. In other examples of the present invention, the gas dividing groove 1513 is arranged on the plate surface of the gas groove plate 151, and the gas uniforming holes 24 connected to the gas dividing groove 1513 are arranged on the second end surface of the dielectric window 2.
[0078] The differences in the coordination between the gas-dividing grooves 1513 and the gas-uniform holes 24 lead to differences in the coordination and connection between the gas-dividing grooves 1513 and the dielectric window 2. Specifically, the dielectric window 2 is embedded in the first surface of the gas-dividing grooves 1513 to support radial communication between the gas-dividing grooves 1513 and the gas-uniform holes 24. Alternatively, the dielectric window 2 is overlapped on the first surface of the gas-dividing grooves 1513 to support axial communication between the gas-dividing grooves 1513 and the gas-uniform holes 24.
[0079] To achieve a stable connection between the air slot plate 151 and the dielectric window 2, in an embodiment of the present invention, the edge air inlet assembly 150 may further include a hoop plate 152, which tightly embraces the outer periphery of the dielectric window 2 and is fixed to the air slot plate 151. The hoop plate 152 and the air slot plate 151 are connected by fasteners.
[0080] Specifically, the hoop plate 152 and the dielectric window 2 are matched with each other in a concave-convex manner. Specifically, one of the hoop plate 152 and the dielectric window 2 is provided with a convex portion, and the other of the two is provided with a concave portion 21 matched with the convex portion.
[0081] In order to further improve the stable connection between the air slot plate 151 and the dielectric window 2 , in some examples of the present invention, the edge air inlet assembly 150 may further include a pressing plate 153 , which is pressed on the hoop plate 152 and connected to the air slot plate 151 .
[0082] In some examples of the present invention, the edge air inlet assembly 150 may further include an inner lining plate 154, which wraps around the opening of the gas slot plate 151. As shown, the inner lining plate 154 includes a first inner lining segment 1541 extending axially and a second inner lining segment 1542 extending radially. The first inner lining segment 1541 corresponds to the wall of the opening of the gas slot plate 151, and the second inner lining segment 1542 overlaps all or part of the plate surface of the gas slot plate 151 near the plasma reaction chamber 1. The inner lining plate 154 protects the opening of the gas slot plate 151, thereby reducing the accumulation of etching products on the gas slot plate 151. After a certain amount of etching products are deposited on the inner lining plate 154, the inner lining plate 154 can be directly replaced without replacing the gas slot plate 151, thereby reducing replacement costs.
[0083] In the figure, the second liner segment 1542 overlaps a portion of the second surface of the slot plate 151. Furthermore, the second surface of the slot plate 151 may be provided with a stepped surface, and the second liner segment 1542 is mounted on this stepped surface. In the figure, the end surface of the second liner segment 1542 proximal to the plasma reaction chamber 1 is flush with the remaining portion of the second surface of the slot plate 151.
[0084] Furthermore, a guide section 1543 is provided at the portion where the second lining section 1542 and the first lining section 1541 are connected.
[0085] In order to improve the airtightness between any two of the central air inlet assembly 130 , the edge air inlet assembly 150 and the dielectric window 2 , a seal is provided between any two of the central air inlet assembly 130 , the edge air inlet assembly 150 and the dielectric window 2 .
[0086] A first sealing ring 1551 is provided as a seal between the outer periphery of the central air inlet assembly 130 and the dielectric window 2. In some embodiments of the present invention, the first sealing ring 1551 may be disposed within a groove provided on the outer periphery of the central air inlet assembly 130, or in other embodiments of the present invention, the first sealing ring 1551 may be disposed within a groove provided on the wall of the dielectric window 2.
[0087] A sealing ring serving as a sealing member is provided between the edge air intake assembly 150 and the dielectric window 2 .
[0088] For example, the edge air inlet assembly 150 includes a hoop plate 152. A second sealing ring 1552 and a third sealing ring 1553 are provided between the hoop plate 152 and the dielectric window 2, and between the hoop plate 152 and the air slot plate 151. The second sealing ring 1552 is used to seal between the hoop plate 152 and the dielectric window 2. Specifically, the second sealing ring 1552 can be provided on the plate surface of the hoop plate 152 that is in contact with the dielectric window 2, and the plate surface is provided with a groove; or the second sealing ring 1552 can be provided on the end surface of the dielectric window 2 that is in contact with the hoop plate 152, and the end surface is provided with a groove. The third sealing ring 1553 is used to seal between the hoop plate 152 and the air slot plate 151. Specifically, the third sealing ring 1553 can be provided on the plate surface of the hoop plate 152 that is in contact with the air slot plate 151, and the plate surface is provided with a groove.
[0089] The second and third sealing rings 1552 and 1553 are concentrically arranged, and are located on the inner and outer sides of the gas separation groove 1513, with the inner side being closer to the axis of the dielectric window 2 than the outer side, and the outer side being further away from the axis of the dielectric window 2 than the inner side. The provision of the second and third sealing rings 1552 and 1553 allows the gas separation groove 1513 to be fabricated from the first surface of the gas groove plate 151, reducing the machining difficulty and minimizing process gas leakage.
[0090] The edge air inlet assembly 150 includes an inner lining plate 154, and a fourth sealing ring 1554 and a fifth sealing ring 1555 are arranged between the inner lining plate 154 and the dielectric window 2, and between the inner lining plate 154 and the air groove plate 151, wherein the fourth sealing ring 1554 is used to seal between the inner lining plate 154 and the dielectric window 2. Specifically, the fourth sealing ring 1554 can be arranged on the plate surface where the inner lining plate 154 and the dielectric window 2 are in contact, and the plate surface is provided with a groove; or the fourth sealing ring 1554 can be arranged on the end surface where the dielectric window 2 and the inner lining plate 154 are in contact, and the end surface is provided with a groove. The fifth sealing ring 1555 is used to seal between the inner lining plate 154 and the air slot plate 151. Specifically, the fifth sealing ring 1555 can be provided on the surface of the inner lining plate 154 and the air slot plate 151 where they meet, and this surface is provided with a groove; or the fifth sealing ring 1555 can be provided on the surface of the air slot plate 151 and the inner lining plate 154 where they meet, and this surface is provided with a groove. The provision of the inner lining plate 154 protects the opening of the air slot plate 151, thereby reducing the accumulation of etching products on the air slot plate 151. After a certain amount of etching products are deposited on the inner lining plate 154, the inner lining plate 154 can be directly replaced without replacing the air slot plate 151, thereby reducing replacement costs.
[0091] Furthermore, a fourth sealing ring 1554 is disposed on the end surface of the first liner segment 1541, and a fifth sealing ring 1555 is disposed on the surface where the gas slot plate 151 and the second liner segment 1542 meet. The fourth sealing ring 1554 reduces leakage of process gas between the gas-leveling holes 24 and the gas-dividing grooves 1513 from the contact area between the first liner segment 1541 and the dielectric window 2, while the fifth sealing ring 1555 reduces leakage of process gas between the gas-leveling holes 24 and the gas-dividing grooves 1513 from the contact area between the second liner segment 1542 and the gas slot plate 151.
[0092] The above mainly introduces the connection relationship between the edge air inlet assembly 150, the central air inlet assembly 130 and the dielectric window 2 of the embodiment of the present invention from the perspective of improving sealing. The structure of the dielectric window 2 is described in detail below with reference to the accompanying drawings.
[0093] In conjunction with Figure 2, refer to Figures 7 to 10, Figure 7 is a three-dimensional view of a dielectric window 2 provided in an embodiment of the present invention; Figure 8 is a cross-sectional view of a dielectric window 2 provided in an embodiment of the present invention; Figure 9 is an enlarged view of portion D in Figure 8; and Figure 10 is an enlarged view of portion E in Figure 8.
[0094] The illustrated dielectric window 2 may include a recessed portion 21 and a crimping portion 22. The recessed portion 21 is provided on the circumference of the dielectric window 2 to mate with the raised portion of the hoop plate 152. The crimping portion 22 extends outward from the main body of the dielectric window 2 to be crimped onto the hoop plate 152. After the dielectric window 2 is installed in place on the air slot plate 151, the first surface of the air slot plate 151 is flush with the end surface of the crimping portion 22, allowing the hoop plate 152 to be crimped onto both the air slot plate 151 and the crimping portion 22.
[0095] The gas distribution groove 1513 described above is specifically located between the hole wall of the gas groove plate 151 and the peripheral surface of the crimping portion 22. Correspondingly, the second sealing ring 1552 is located between the crimping portion 22 and the hoop plate 152, and the third sealing ring 1553 is located between the hoop plate 152 and the gas groove plate 151.
[0096] The dielectric window 2 may further include a corner portion 23, and the corresponding air groove plate 151 is provided with an annular protrusion that cooperates with the corner portion 23. Compared with the scheme without the corner portion 23, the sealing performance of the cooperation between the air distribution groove 1513 and the air uniforming hole 24 can be further improved by providing the cooperation between the corner portion 23 and the annular protrusion.
[0097] The dielectric window 2 may include gas-leveling holes 24 and third nozzle holes 25. The gas-leveling holes 24 extend radially from the circumference of the crimping portion 22 toward the axis. The third nozzle holes 25 may extend axially or be arranged at an angle relative to the axial direction. By adjusting the position, number, and inclination angle of the third nozzle holes 25 to position them in a location with a strong electric field, the ejected process gas is less likely to be directly withdrawn or have low ionization efficiency, thus meeting different process requirements.
[0098] To facilitate understanding of the technical solutions of the present invention, the central air intake assembly 130 and the edge air intake assembly 150 each have an axial direction and a radial direction, wherein the axial direction and the radial direction of the central air intake assembly 130 are perpendicular to each other. The axial direction of the central air intake assembly 130 and the axial direction of the edge air intake assembly 150 are parallel, and the radial direction of the central air intake assembly 130 and the radial direction of the edge air intake assembly 150 are also parallel.
[0099] In a preferred example of the present invention, the above uniform air hole 24 and the third nozzle 25 form an edge jet path, and the first nozzle 131 forms a central jet path. In the above example of the present invention, there are multiple edge jet paths, and the multiple edge jet paths are arranged around the central jet path.
[0100] Furthermore, the distances between the plurality of edge jet passages and the central jet passage are the same or different. The angles between two adjacent edge jet passages in the plurality of edge jet passages are the same.
[0101] The dielectric window 2 and the central air inlet assembly 130 are made of non-metallic materials, such as ceramic, quartz, etc.
[0102] The terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of technical features indicated. Therefore, a feature specified as "first" or "second" may explicitly or implicitly include one or more of the features.
[0103] The above description is only a preferred embodiment of the present invention and an illustration of the technical principles used, and is not intended to limit the present invention. For those skilled in the art, the present invention can be modified and varied in various ways. The scope of the invention involved in the present invention is not limited to the technical solutions formed by a specific combination of the above-mentioned technical features, but should also cover other technical solutions formed by any combination of the above-mentioned technical features or their equivalent features without departing from the above-mentioned inventive concept. For example, the above-mentioned features are replaced with the technical features with similar functions disclosed in the present invention (but not limited to) by each other to form a technical solution.
Claims
1. An upper intake air distribution structure, characterized in that, It includes a central air intake assembly and an edge air intake assembly. Among them, the central air intake assembly forms a plurality of central jet passages, and the edge air intake assembly forms a plurality of edge jet passages. The plurality of edge jet passages are arranged around the central jet passages.
2. The upper air intake and air distribution structure according to claim 1, wherein The central air intake assembly includes a first jet hole and a second jet hole, and the second jet hole is arranged around the first jet hole.
3. The upper air intake and air distribution structure according to claim 1, characterized in that, The edge air intake assembly includes a gas groove plate, and the edge gas source provides process gas to the dielectric window through the gas groove plate.
4. The upper air intake and air distribution structure according to claim 3, characterized in that, The gas groove plate includes a gas source hole, a communication hole and a gas distribution groove. Among them, the gas source hole is used to communicate with the edge gas source; the communication hole communicates the gas source hole and the gas distribution groove; The dielectric window includes uniform air holes and a third jet hole. The gas distribution groove communicates with the uniform air holes, and the third jet hole is parallel to the axis of the dielectric window or inclined with respect to the axis of the dielectric window; One of the uniform air holes and one of the third jet holes form an edge jet passage; or The uniform air holes are multiple and extend radially along the dielectric window. One of the uniform air holes can communicate with multiple third jet holes to form an edge jet passage.
5. The upper air intake and air distribution structure according to claim 4, characterized in that, The gas distribution groove is arranged in a ring between the gas groove plate and the dielectric window. The gas distribution groove is arranged on the hole wall of the gas groove plate, and the uniform air holes are arranged on the circumferential surface of the dielectric window.
6. The upper air intake and air distribution structure according to claim 5, characterized in that, The edge air intake assembly further includes an inner lining plate, and the inner lining plate wraps around the opening of the gas groove plate.
7. The upper air intake and air distribution structure according to claim 6, characterized in that, The inner lining plate includes a first inner lining section extending axially and a second inner lining section extending radially. Among them, the first inner lining section corresponds to the hole wall of the gas groove plate, and the second inner lining section overlaps all or part of the plate surface of the gas groove plate.
8. The upper air intake and air distribution structure according to claim 7, wherein, A guiding section is arranged at the joint of the second inner lining section and the first inner lining section.
9. The upper air intake and air distribution structure according to claim 6, characterized in that, The dielectric window includes a recessed part and a crimping part. The recessed part is arranged on the circumferential surface of the dielectric window; the crimping part extends outward from the main body of the dielectric window.
10. The upper air intake and air distribution structure according to claim 9, characterized in that, The plate surface of the gas groove plate is flush with the end surface of the crimping part.
11. The upper air intake and air distribution structure according to claim 10, characterized in that, The gas distribution groove is located between the hole wall of the gas groove plate and the circumferential surface of the crimping part.
12. The upper air intake and air distribution structure according to claim 11, wherein The dielectric window further includes a corner part, and the gas groove plate is provided with an annular protrusion cooperating with the corner part.
13. The upper air intake and air distribution structure according to claim 12, wherein Sealing members are arranged between any two of the central air intake assembly, the edge air intake assembly and the dielectric window.
14. A plasma etching machine, characterized in that, It includes a plasma reaction chamber, a dielectric window, a central gas source, an edge gas source and the upper air intake and air distribution structure according to any one of claims 1 to 13. Among them, the dielectric window closes the upper part of the plasma reaction chamber. The central air intake assembly of the upper air intake and air distribution structure is arranged at the center of the dielectric window and communicates with the central gas source; the central gas source uniformly sprays process gas to the middle part of the plasma reaction chamber through the central air intake assembly; the edge air intake assembly of the upper air intake and air distribution structure is arranged at the edge of the dielectric window and communicates with the edge gas source; the edge gas source uniformly sprays process gas to the edge of the plasma reaction chamber through the edge air intake assembly.
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