Driver, semiconductor apparatus and method for controlling semiconductor apparatus

Abstract

The present application relates to the technical field of power electronic devices, and provides a driver, a semiconductor apparatus, and a method for controlling a semiconductor apparatus. The driver comprises a fixing assembly and a driving assembly. The fixing assembly comprises an installation member and a connecting member, the connecting member being disposed on the mounting member, and the mounting member being provided with a first positive electrode and a first negative electrode. The driving assembly comprises a driving board, the driving board being provided with a second positive electrode and a second negative electrode. The driving board is movably connected to the connecting member, such that the first positive electrode is connected to the second positive electrode, and the first negative electrode is connected to the second negative electrode. The driver has the advantages of being convenient to repair, upgrade and modify, and having low usage costs.

Description

Driver, semiconductor device, and semiconductor device control method

[0001] Related applications

[0002] This application claims priority to the Chinese patent application filed with the China Patent Office on December 27, 2023, with application number 202311838584.5 and application name “Driver, semiconductor device and control method of semiconductor device”, the entire contents of which are incorporated by reference into this application. Technical Field

[0003] The present application relates to the technical field of power electronic equipment, and in particular to a driver, a semiconductor device, and a control method for the semiconductor device. Background Art

[0004] Integrated Gate-Commutated Thyristor (IGCT) is a fully controlled semiconductor switching device with the advantages of high blocking voltage, strong current-carrying capacity, low conduction voltage and series connection. It is mainly used in power converters and motor drive systems.

[0005] Currently, integrated gate-commutated thyristors (GCTs) combine a GCT chip and a driver circuit on a circuit board to meet the demands of high-voltage electronic devices. However, when the driver circuit fails, the entire GCT must be replaced, which is inconvenient and costly to repair and hinders upgrades and improvements to the driver circuit. Summary of the Invention

[0006] The present application provides a driver, a semiconductor device, and a control method for the semiconductor device, which facilitates the repair and upgrade of the drive circuit and reduces the maintenance cost of the integrated gate-commutated thyristor.

[0007] The present application provides a driver, comprising:

[0008] A fixing assembly, comprising a mounting member and a connecting member, wherein the connecting member is arranged on the mounting member, and the mounting member is provided with a first positive electrode and a first negative electrode;

[0009] A driving assembly, comprising a driving board, wherein the driving board is provided with a second positive electrode and a second negative electrode;

[0010] The driving board is movably connected to the connecting member, so that the first positive electrode is connected to the second positive electrode, and the first negative electrode is connected to the second negative electrode.

[0011] In some embodiments, the connector includes:

[0012] Conductors, the number of which is at least two, the two conductors being spaced apart from each other on the mounting member and connected to the first positive electrode and the first negative electrode, respectively;

[0013] The driving board is inserted between the two conductors, and the second positive electrode and the second negative electrode are connected to the two conductors respectively.

[0014] In some embodiments, at least one of the electrical conductors is a spring sheet, which comprises:

[0015] a connecting portion, provided on the mounting member;

[0016] A contact portion is provided on the connecting portion, a portion of which is spaced apart from the connecting portion, and a side away from the contact portion is connected to the driver board;

[0017] The supporting portion is connected between the contact portion and the connecting portion.

[0018] In some embodiments, the drive assembly further comprises a housing having a mounting cavity;

[0019] Wherein, the driving board is arranged in the installation cavity.

[0020] In some embodiments, one of the housing and the mounting member is provided with a plug-in slot, and the other is provided with a plug-in member, and the plug-in member is inserted into the plug-in slot.

[0021] The present application also provides a semiconductor device, comprising:

[0022] semiconductor devices;

[0023] In the driver described above and any one of its optional embodiments, the semiconductor device is arranged on the mounting member, the first positive electrode is connected to the gate of the semiconductor device, and the first negative electrode is connected to the cathode of the semiconductor device.

[0024] In some embodiments, the semiconductor device further includes a heat sink disposed on the semiconductor device.

[0025] In some embodiments, the driver board is provided with a driver circuit, and the driver circuit includes:

[0026] A logic control module is configured to receive and feed back a control signal;

[0027] a triggering and turning-on module, configured to input a forward current into the semiconductor device when the logic control module receives a turning-on signal, so as to control the semiconductor device to turn on;

[0028] a triggering shutdown module, configured to input a reverse current into the semiconductor device when the logic control module receives a shutdown signal, so as to control the semiconductor device to be shut down;

[0029] an energy supply module, configured to supply power to the logic control module, the trigger opening module, and the trigger closing module;

[0030] a sampling module, configured to send an abnormality signal to the logic control module when the energy supply module operates abnormally;

[0031] The bypass module is configured to connect the gate and cathode of the semiconductor device when the logic control module receives the abnormal signal.

[0032] In some embodiments, the trigger activation module includes:

[0033] a first energy storage element, whose positive electrode is connected to the second negative electrode, and whose negative electrode is connected to the second positive electrode;

[0034] a first diode, an anode of which is connected to the second positive electrode;

[0035] a second diode, a cathode of which is connected to the second positive electrode;

[0036] a first inductor, an input end of which is connected to the cathode of the first diode, and an output end of which is connected to the anode of the second diode;

[0037] a first switch, one end of which is connected to the second negative electrode, and the other end of which is connected to the input end of the first inductor;

[0038] a second switch, one end of which is connected to the anode of the second diode and the other end of which is connected to the second positive electrode;

[0039] The logic control module is connected to the first switch and the second switch, and is configured to control the first switch and the second switch to be closed when the opening signal is received, and to control the second switch to be opened when the current of the first inductor exceeds a first preset value.

[0040] In some embodiments, the trigger shutdown module includes:

[0041] a second energy storage element, the positive electrode of which is connected to the second negative electrode;

[0042] a third switch, one end of which is connected to the negative electrode of the second energy storage component, and the other end of which is connected to the second positive electrode;

[0043] The logic control module is connected to the third switch and is configured to control the third switch to be closed when receiving the shutdown signal.

[0044] In some embodiments, the bypass module includes:

[0045] a fourth switch, one end of which is connected to the second positive electrode, and the other end of which is connected to the second negative electrode;

[0046] The logic control module is connected to the fourth switch and is configured to control the fourth switch to be closed when receiving the abnormal signal.

[0047] In some embodiments, the driving circuit further includes a sustain trigger module, which includes:

[0048] a third energy storage component, the positive electrode of which is connected to the second negative electrode;

[0049] a second inductor, an input terminal of which is connected to the second negative electrode;

[0050] a third inductor, an output end of which is connected to the second positive electrode;

[0051] a third diode, an anode of which is connected to the output terminal of the second inductor, and a cathode of which is connected to the input terminal of the third inductor;

[0052] a first capacitor, one end of which is connected to the second negative electrode, and the other end of which is connected to the output point of the third inductor;

[0053] a fifth switch, one end of which is connected to the anode of the third diode, and the other end of which is connected to the cathode of the third energy storage component;

[0054] The logic control module is connected to the fifth switch and is configured to control the fifth switch to continuously perform closing and opening actions according to a preset frequency when receiving a maintenance trigger opening signal.

[0055] In some embodiments, the driving circuit further includes a static voltage-sharing resistor, one end of which is connected to the anode of the semiconductor device, and the other end of which is connected to the sampling module.

[0056] In some embodiments, a damping circuit module is further included, comprising:

[0057] a damping resistor, one end of which is connected to the anode of the semiconductor device;

[0058] A second capacitor has one end connected to the other end of the damping resistor and the other end connected to the energy supply module.

[0059] In some embodiments, the driving circuit further includes a dynamic clamping module, which includes:

[0060] a lightning arrester, one end of which is connected to the anode of the semiconductor device;

[0061] a sixth switch, one end of which is connected to the other end of the arrester, and the other end of which is connected to the anode of the semiconductor device;

[0062] The logic control module is connected to the sixth switch and is configured to control the sixth switch to be closed when the voltage across the semiconductor device is greater than the tolerance value of the arrester.

[0063] In some embodiments, the driving circuit further includes a current sensor, which is disposed on the semiconductor device and connected to the sampling module.

[0064] The present application provides a control method for a semiconductor device based on the above-mentioned semiconductor device and any one of its optional embodiments, including:

[0065] Determining whether the energy supply module is supplying power normally;

[0066] When the energy supply module fails to supply power normally, the fourth switch is closed;

[0067] When the energy supply module supplies power normally, the fourth switch is disconnected;

[0068] Determine whether an activation signal is received;

[0069] When the opening signal is received, the first switch and the second switch are closed, and when the current of the first inductor exceeds a first preset value, the second switch is opened;

[0070] Determining whether a shutdown signal is received;

[0071] In the case where the shutdown signal is not received, determining whether the activation signal is received;

[0072] When the shutdown signal is received, the third switch is closed;

[0073] Determining whether the driver loses power;

[0074] When the driver is not powered off, determining whether the activation signal is received;

[0075] In the event of a power failure to the driver, the fourth switch is closed.

[0076] In some embodiments, the control method of a semiconductor device according to the second aspect and any one of its optional embodiments provided herein includes:

[0077] Determining whether the energy supply module is supplying power normally;

[0078] When the energy supply module fails to supply power normally, the fourth switch is closed;

[0079] When the energy supply module supplies power normally, the fourth switch is disconnected;

[0080] Determine whether an activation signal is received;

[0081] When the opening signal is received, the first switch and the second switch are closed, and when the current of the first inductor exceeds a first preset value, the second switch is opened;

[0082] Determine whether a maintain-open signal is received;

[0083] In the case where the maintenance activation signal is not received, determining whether the activation signal is received;

[0084] When receiving the maintain-on signal, the fifth switch cyclically closes and opens according to the preset frequency;

[0085] Determining whether a shutdown signal is received;

[0086] In the case where the shutdown signal is not received, determining whether the activation signal is received;

[0087] When the shutdown signal is received, the third switch is closed;

[0088] Determining whether the driver loses power;

[0089] When the driver is not powered off, determining whether the activation signal is received;

[0090] In the event of a power failure to the driver, the fourth switch is closed.

[0091] In some embodiments, the control method of a semiconductor device according to the second aspect and any one of its optional embodiments provided herein includes:

[0092] Determining whether the energy supply module is supplying power normally;

[0093] When the energy supply module fails to supply power normally, the fourth switch is closed;

[0094] When the energy supply module supplies power normally, the fourth switch is disconnected;

[0095] Determine whether an activation signal is received;

[0096] When the opening signal is received, the first switch and the second switch are closed, and when the current of the first inductor exceeds a first preset value, the second switch is opened;

[0097] Determine whether a maintenance open signal is received;

[0098] In the case where the maintenance activation signal is not received, determining whether the activation signal is received;

[0099] When receiving the maintain-on signal, the fifth switch cyclically closes and opens according to the preset frequency;

[0100] Determining whether a shutdown signal is received;

[0101] In the case where the shutdown signal is not received, determining whether the activation signal is received;

[0102] Upon receiving the shutdown signal, determining whether the current of the semiconductor device exceeds a second preset value;

[0103] When the current of the semiconductor device exceeds the second preset value, determining whether the maintain-on signal is received;

[0104] When the current of the semiconductor device does not exceed the second preset value, the third switch is closed;

[0105] Determining whether the voltage across the semiconductor device exceeds the tolerance value of the arrester;

[0106] When the voltage across the semiconductor device does not exceed the tolerance value of the arrester, determining whether the driver loses power;

[0107] When the voltage across the semiconductor device exceeds the tolerance of the arrester, the sixth switch is closed;

[0108] Determining whether the voltage across the semiconductor device exceeds a tolerance value of the semiconductor device;

[0109] When the voltage across the semiconductor device does not exceed the tolerance value of the semiconductor device, determining whether the driver is powered off;

[0110] When the voltage across the semiconductor device exceeds a tolerance value of the semiconductor device, the first switch and the second switch are closed, and when the current of the first inductor exceeds a first preset value, the second switch is opened;

[0111] Wherein, when the driver is not powered off, it is determined whether the opening signal is received; when the driver is powered off, the fourth switch is closed.

[0112] In the driver, semiconductor device and control method of the semiconductor device provided in the present application, the driver is detachably connected to the driving component through a fixed component, and the driving component can be removed for inspection or upgrading, which makes the use of the driver more convenient and reduces the cost of using the driver. BRIEF DESCRIPTION OF THE DRAWINGS

[0113] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and, together with the description, serve to explain the principles of the present application.

[0114] FIG1 is a circuit diagram of a semiconductor device in the prior art;

[0115] FIG2 is a schematic structural diagram of a semiconductor device in the prior art;

[0116] FIG3 is a schematic diagram of the structure of a driver according to an embodiment of the present application;

[0117] FIG4 is an enlarged view of point A in FIG3 ;

[0118] FIG5 is a schematic structural diagram of a first exemplary semiconductor device in an embodiment of the present application;

[0119] FIG6 is a schematic structural diagram of a second exemplary semiconductor device in an embodiment of the present application;

[0120] FIG7 is a circuit diagram of a first exemplary semiconductor device according to an embodiment of the present application;

[0121] FIG8 is a circuit diagram of a second exemplary semiconductor device in an embodiment of the present application;

[0122] FIG9 is a circuit diagram of a third exemplary semiconductor device in an embodiment of the present application;

[0123] FIG10 is a circuit diagram of a fourth exemplary semiconductor device according to an embodiment of the present application;

[0124] FIG11 is a flowchart of a first exemplary control method in an embodiment of the present application;

[0125] FIG12 is a flow chart of a second exemplary control method in an embodiment of the present application;

[0126] FIG13 is a flowchart of a third exemplary control method in an embodiment of the present application.

[0127] Description of reference numerals:

[0128] 101-semiconductor component; 102-driving component; 103-heat dissipation component;

[0129] 100 - fixing assembly; 110 - fixing member; 111 - first positive electrode; 112 - first negative electrode; 113 - plug-in board; 120 - spring sheet; 121 - connecting portion; 122 - contact portion; 123 - supporting portion;

[0130] 200 - drive assembly; 210 - drive board; 220 - gold finger; 221 - second positive electrode; 222 - second negative electrode; 230 - housing; 231 - mounting cavity; 232 - limit plate; 233 - socket;

[0131] 300-Semiconductor devices;

[0132] 400- Radiator;

[0133] C1-first energy storage component; C2-second energy storage component; C3-first capacitor; C4-third energy storage component; C5-second capacitor;

[0134] S1-first switch; S2-second switch; S3-third switch; S4-fourth switch; S5-fifth switch; S6-sixth switch;

[0135] D1-first diode; D2-second diode; D3-third diode;

[0136] L1-first inductor; L2-second inductor; L3-third inductor;

[0137] R1-static equalizing resistor; R2-damping resistor; R3-lightning arrester;

[0138] I - current sensor.

[0139] The above drawings illustrate specific embodiments of the present application, which will be described in more detail below. These drawings and the textual description are not intended to limit the scope of the present application in any way, but rather to illustrate the concepts of the present application to those skilled in the art by reference to specific embodiments. DETAILED DESCRIPTION

[0140] Exemplary embodiments will be described in detail herein, with examples illustrated in the accompanying drawings. In the following description, when referring to the drawings, identical numerals in different figures represent identical or similar elements, unless otherwise indicated. The embodiments described in the following exemplary embodiments are not intended to represent all embodiments consistent with the present application. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the present application, as detailed in the appended claims.

[0141] FIG1 is a circuit diagram of a semiconductor device in the prior art.

[0142] 1 , currently, a semiconductor device is composed of at least two semiconductor elements 101 connected in series. Each semiconductor element 101 is provided with a driver 102 . The driver 102 is connected to the gate and cathode of the semiconductor element 101 to drive the semiconductor element 101 to turn on or off.

[0143] FIG. 2 is a schematic structural diagram of a semiconductor device in the prior art.

[0144] Referring to Figure 2, in actual application, multiple semiconductor components 101 are crimped in series, and heat sinks 103 are provided on both sides of each semiconductor component 101. In order to ensure reliable contact between the semiconductor component 101 and the heat sink 103, a pressure of 100KN needs to be applied to the entire semiconductor device. If a driver 102 in one of the semiconductor components 101 fails, the entire semiconductor device needs to be depressurized, the damaged semiconductor component 101 needs to be removed, and a new driver 102 needs to be replaced. After the driver 102 is replaced, the entire semiconductor device needs to be installed and tested. Therefore, the semiconductor device has the defects of inconvenient maintenance and high maintenance costs. In addition, if the drive circuit is upgraded and modified, it is also necessary to perform pressure relief disassembly and overall design and manufacturing of the semiconductor device, and the upgrade cost is also large.

[0145] To address the above technical issues, embodiments of the present application provide a driver, a semiconductor device, and a control method for a semiconductor device. The driver comprises a fixed assembly and a driver assembly, and the semiconductor device is connected to the fixed assembly. The driver assembly and the fixed assembly are detachable. If the driver assembly fails, it is only necessary to remove the driver assembly from the fixed assembly for repair, without depressurizing the press-fitted semiconductor device. This facilitates repair work and reduces repair costs. It is also beneficial for upgrades and modifications.

[0146] The following specific embodiments describe in detail the technical solution of the present application and how the technical solution of the present application solves the above-mentioned technical problems. The following specific embodiments can be combined with each other, and the same or similar concepts or processes may not be repeated in some embodiments. The embodiments of the present application will be described below in conjunction with the accompanying drawings.

[0147] FIG3 is a schematic diagram of the structure of the driver in an embodiment of the present application.

[0148] Referring to Figure 3, the driver provided in an embodiment of the present application includes a fixing assembly 100 and a driving assembly 200. The fixing assembly 100 includes a mounting member and a connecting member, the connecting member being disposed on the mounting member, and the mounting member being provided with a first positive electrode 111 and a first negative electrode 112. The driving assembly 200 includes a driving board 210, which is provided with a second positive electrode 221 and a second negative electrode 222. The driving board 210 is movably connected to the connecting member, so that the first positive electrode 111 is connected to the second positive electrode 221, and the second positive electrode 221 is connected to the second negative electrode 222.

[0149] Both the mounting member and the driver board 210 can be printed circuit boards (PCBs). The first positive electrode 111 and the first negative electrode 112 can be respectively disposed on the upper and lower sides of one end of the mounting member, and the second positive electrode 221 and the second negative electrode 222 can be respectively disposed on the upper and lower sides of the driver board 210. Optionally, the driver board 210 is provided with a connecting finger 220, and the second positive electrode 221 and the second negative electrode 222 are both disposed on the connecting finger 220. An insulating layer can be disposed between the second positive electrode 221 and the second negative electrode 222 to prevent electrical conduction between the second positive electrode 221 and the second negative electrode 222.

[0150] In actual use, the mounting member is used to connect the semiconductor device 300, with the first positive electrode 111 connected to the gate of the semiconductor device 300, and the first negative electrode 112 connected to the cathode of the semiconductor device 300. The driver board 210 is provided with a gold finger 220 at one end, which is connected to the fixing member 110 through a connector, so that the first positive electrode 111 is connected to the second positive electrode 221, and the first negative electrode 112 is connected to the second negative electrode 222, so that the driver board 210 and the semiconductor device 300 are electrically connected, and the semiconductor device 300 can be controlled to be turned on or off by the driver board 210.

[0151] If the driver board 210 fails, or needs to be upgraded, the driver board 210 can be directly removed from the connector without depressurizing and disassembling the entire driver and semiconductor device 300, thereby improving the convenience of maintenance and upgrading and reducing the cost of use.

[0152] In some embodiments, the connector may include at least two conductors, which are spaced apart on the mounting member and are respectively connected to the first positive electrode 111 and the first negative electrode 112. The driver board 210 is inserted between the two conductors, and the second positive electrode 221 and the second negative electrode 222 are respectively connected to the two conductors.

[0153] Two conductors can be connected to the upper and lower sides of one end of the mounting member, respectively. The upper conductor is connected to the first positive electrode 111, and the lower conductor is connected to the first negative electrode 112. The spacing between the two conductors can be adapted to the thickness of the gold finger 220. By inserting the gold finger 220 between the two conductors, the second positive electrode 221 is connected to the first positive electrode 111 through the upper conductor, and the second negative electrode 222 is connected to the first negative electrode 112 through the lower conductor.

[0154] FIG4 is an enlarged view of point A in FIG3 .

[0155] In some embodiments, at least one of the conductors can be a spring sheet 120, which includes a connecting portion 121, a contact portion 122, and a support portion 123. The connecting portion 121 is disposed on the mounting member. The contact portion 122 is disposed on the connecting portion 121, with a portion spaced apart from the connecting portion 121 and connected to the driver board 210. The support portion 123 is connected between the contact portion 122 and the connecting portion 121.

[0156] 4 , illustratively, in this embodiment, both conductors are spring sheets 120, one end of a connecting portion 121 is welded to a mounting member, and the end of the connecting portion 121 facing away from the mounting member is bent and provided with a contact portion 122, so that the contact portion 122 is arranged parallel to the connecting portion 121 and spaced apart, and a support portion 123 is welded between the connecting portion 121 and the contact portion 122. Optionally, there are two support portions 123, which are symmetrically arranged between the connecting portion 121 and the contact portion 122.

[0157] After the gold finger 220 is inserted between the two spring sheets 120, the spring sheets 120 on both sides simultaneously apply elastic pressure to the gold finger 220, causing the contact portion 122 to contact the gold finger 220. At the same time, the support portion 123 can increase the pressure of the contact portion 122 on the gold finger 220, ensuring stable contact between the contact portion 122 and the surface of the gold finger 220, reducing the point contact resistance between the spring sheet 120 and the gold finger 220 to the micro-ohm level, and ensuring electrical conduction between the spring sheet 120 and the second positive electrode 221 and the second negative electrode 222 on the gold finger 220.

[0158] The spring piece 120 can be made of high-conductivity copper material, the surface of the spring piece 120 connected to the mounting part can be treated with tin plating, the surface in contact with the gold finger 220 can be treated with gold plating, and the remaining parts can be nickel-plated for anti-oxidation.

[0159] In some embodiments, the driving assembly 200 may further include a housing 230 having a mounting cavity 231 , in which the driving board 210 is disposed.

[0160] The housing 230 can be made of metal or plastic, and the driver board 210 can be fixed in the mounting cavity 231 by bonding or fasteners. In actual use, the mounting cavity 231 should have at least one opening, and the gold finger 220 of the driver board 210 extends through the opening of the mounting cavity 231 to be inserted between the two spring leaves 120.

[0161] On the one hand, the housing 230 can protect the driving circuit on the driving board 210 from external electromagnetic interference, and on the other hand, it can support and protect the driving board 210 to avoid damage from external forces during use and transportation.

[0162] In some embodiments, one of the housing 230 and the mounting member may be provided with a plug-in slot 233, and the other may be provided with a plug-in member, which is inserted into the plug-in slot 233. This connects the housing 230 and the mounting member to each other, thereby improving the position stability of the driver board 210 during use.

[0163] Referring to Figure 4 , illustratively, a stopper plate 232 is provided on the bottom wall of the inner side of the housing 230. The stopper plate 232 is spaced apart from the bottom sidewall of the housing 230 to form a plug-in slot 233. A plug-in component is provided at the bottom of the mounting member. Optionally, the plug-in component is a plug-in board 113. The thickness of the plug-in slot 233 matches the thickness of the plug-in board 113. When the driver board 210 is connected to the mounting member, the plug-in board 113 on the mounting member is inserted into the plug-in slot 233 at the bottom of the housing 230.

[0164] Of course, the installation member may be provided with a plug-in slot 233 and a plug-in member may be provided on the housing 230 , which can also achieve the purpose of connecting the housing 230 and the installation member. This will not be described in detail in this embodiment.

[0165] FIG5 is a schematic structural diagram of a first exemplary semiconductor device in an embodiment of the present application.

[0166] Referring to Figure 5 , based on the driver described above, an embodiment of the present application further provides a semiconductor device comprising a semiconductor device 300 and the driver described above. The semiconductor device 300 is mounted on a mounting member, the first positive electrode 111 is connected to the gate of the semiconductor device 300, and the first negative electrode 112 is connected to the cathode of the semiconductor device 300.

[0167] The semiconductor device 300 may be a gate-commutated thyristor (GCT). Optionally, the mounting member may be provided with a positioning hole, and the semiconductor device 300 may be fixed in the positioning hole by welding.

[0168] FIG6 is a schematic structural diagram of a second exemplary semiconductor device in an embodiment of the present application.

[0169] 6 , in some embodiments, the semiconductor device may further include a heat sink 400 disposed on the semiconductor device 300 to reduce the temperature of the semiconductor device 300 during operation.

[0170] In actual use, multiple semiconductor devices 300 can be provided and crimped in series. For example, as shown in FIG6 , the number of semiconductor devices 300 and the number of drivers are both two, and they are provided in a one-to-one correspondence. The number of heat sinks 400 can be greater than the number of semiconductor devices 300 , and multiple heat sinks 400 are arranged alternately with multiple semiconductor devices 300 , so that at least one heat sink 400 is provided on both sides of each semiconductor device 300 .

[0171] The driver board 210 in each driver turns the corresponding semiconductor device 300 on or off. If a driver board 210 in a driver becomes damaged or requires upgrading, it can simply be removed and replaced with a new one. This eliminates the need to depressurize and disassemble the crimped semiconductor device 300 and heat sink 400, eliminating the need for reinstallation and testing. This reduces maintenance time and lowers operating costs.

[0172] FIG. 7 is a circuit diagram of a first exemplary semiconductor device in an embodiment of the present application.

[0173] In some embodiments, the driver board is provided with a driver circuit. Referring to FIG. 7 , the driver circuit may include: a logic control module, a trigger-on module, a trigger-off module, an energy supply module, a sampling module, and a bypass module.

[0174] The logic control module is configured to receive and feed back a control signal. Optionally, the control signal is a pulse signal.

[0175] The triggering and turning-on module is configured to input a forward current into the semiconductor device when the logic control module receives a turning-on signal, so as to control the semiconductor device to turn on.

[0176] In some embodiments, the trigger opening module may include: a first energy storage component C1, a first diode D1, a second diode D2, a first inductor L1, a first switch S1, and a second switch S2. The positive electrode of the first energy storage component C1 is connected to the second negative electrode, and the negative electrode is connected to the second positive electrode. The anode of the first diode D1 is connected to the second positive electrode, and the cathode of the second diode D2 is connected to the second positive electrode. The input end of the first inductor L1 is connected to the cathode of the first diode D1, and the output end is connected to the anode of the second diode D2. One end of the first switch S1 is connected to the second negative electrode, and the other end is connected to the input end of the first inductor L1. One end of the second switch S2 is connected to the anode of the second diode D2, and the other end is connected to the second positive electrode.

[0177] The logic control module is connected to the first switch S1 and the second switch S2 and is configured to control the first switch S1 and the second switch S2 to be closed when receiving an opening signal, and to control the second switch S2 to be opened when the current of the first inductor L1 exceeds a first preset value.

[0178] When the logic control module receives the turn-on signal, it controls the first switch S1 and the second switch S2 to close. At this time, the first energy storage component C1 discharges, causing the current in the first inductor L1 to increase. When the current peak of the first inductor L1 reaches a first preset value, the second switch S2 is controlled to open, allowing the current to enter the semiconductor device through the second positive electrode, the upper spring plate, the first positive electrode, and the gate of the semiconductor device. Then, it passes through the cathode of the semiconductor device, the first negative electrode, the lower spring plate, and the second negative electrode in sequence and returns to the positive electrode of the first energy storage component C1. After the entire process lasts for at least 10 μs, the current in the circuit decays to zero, and the semiconductor device is turned on. Optionally, the first preset value is 100 A.

[0179] The trigger shutdown module is configured to input a reverse current to the semiconductor device when the logic control module receives a shutdown signal, so as to control the semiconductor device to be shut down.

[0180] In some embodiments, the trigger shutdown module may include: a second energy storage element C2 and a third switch S3. The positive electrode of the second energy storage element C2 is connected to the second negative electrode, and one end of the third switch S3 is connected to the negative electrode of the second energy storage element C2, and the other end is connected to the second positive electrode. The logic control module is connected to the third switch S3 and is configured to control the third switch S3 to close when receiving the shutdown signal.

[0181] When the logic control module receives a shutdown signal, it controls the third switch S3 to close, causing the second energy storage element C2 to discharge. Current flows sequentially through the third switch S3, the second negative electrode, the lower spring piece, the first negative electrode, and the cathode of the semiconductor device into the semiconductor device. Current then flows sequentially through the semiconductor device's gate, the first positive electrode, the upper spring piece, and the second positive electrode back to the second energy storage element C2. The gate of the semiconductor device can flow a current of at least 1 kA, shutting down the semiconductor device.

[0182] The energy supply module is configured to supply power to the logic control module, the trigger opening module and the trigger closing module. Optionally, the energy supply module is a battery.

[0183] The sampling module is configured to send an abnormality signal to the logic control module when the energy supply module operates abnormally. The bypass module is configured to connect the gate and cathode of the semiconductor device when the logic control module receives the abnormality signal.

[0184] In some embodiments, the bypass module may include a fourth switch S4, one end of which is connected to the second positive electrode and the other end of which is connected to the second negative electrode. The logic control module is connected to the fourth switch S4 and is configured to control the fourth switch S4 to close when receiving an abnormal signal.

[0185] When the module monitors the abnormal operation of the energy supply module, it sends an abnormal signal to the logic control module. After receiving the abnormal signal, the logic control module controls the fourth switch S4 to close. At this time, the fourth switch S4 connects the second positive electrode and the second negative electrode, so that the gate and cathode of the semiconductor device are bypassed, preventing the semiconductor device from being triggered to turn on when the energy supply module is abnormal.

[0186] By dynamically controlling the gate and cathode voltages of semiconductor devices through the logic control module, the problem of voltage damage in the use of semiconductor devices can be reduced, and the reliability and stability of the semiconductor devices during operation can be improved.

[0187] FIG. 8 is a circuit diagram of a second exemplary semiconductor device in an embodiment of the present application.

[0188] 8 , in some embodiments, the driving circuit may further include a sustain trigger module, which includes: a third energy storage element C4 , a second inductor L2 , a third inductor L3 , a third diode D3 , a first capacitor C3 , and a fifth switch S5 .

[0189] The positive electrode of the third energy storage component C4 is connected to the second negative electrode. The input end of the second inductor L2 is connected to the second negative electrode. The output end of the third inductor L3 is connected to the second positive electrode. The anode of the third diode D3 is connected to the output end of the second inductor L2, and the cathode is connected to the input end of the third inductor L3. One end of the first capacitor C3 is connected to the second negative electrode, and the other end is connected to the output point of the third inductor L3. One end of the fifth switch S5 is connected to the anode of the third diode D3, and the other end is connected to the negative electrode of the third energy storage component C4. Among them, the logic control module is connected to the fifth switch S5, and is configured to control the fifth switch S5 to continuously perform closing and opening actions according to a preset frequency when receiving a maintenance trigger opening signal.

[0190] When the semiconductor device is in the on state, if the logic control module receives a maintenance trigger signal, it controls the fifth switch S5 to continuously perform closing and opening actions at a preset frequency. Each time the fifth switch S5 is closed and opened, a forward current of at least 1A is applied between the gate and cathode of the semiconductor device, thereby keeping the semiconductor device continuously in the on state.

[0191] Optionally, the number of first inductors L1, first switches S1, and first diodes D1 in the trigger-on circuit is set to two. Each set of first inductors L1, first switches S1, and first diodes D1 is connected in series to form an output current circuit, and the two output current circuits are connected in parallel. When the logic control module receives the turn-on signal, it controls the two first switches S1 to close simultaneously, so that the currents output by the two output current circuits have a certain phase delay, thereby ensuring that the semiconductor device can be accurately triggered to turn on.

[0192] Optionally, the number of third switches S3 in the trigger shutdown circuit may be at least two, with all third switches S3 arranged in parallel. When the logic control module receives the shutdown signal, it simultaneously controls all third switches S3 to close, so that all parallel third switches S3 share the nearly 10 kA current generated by the semiconductor device at the moment of shutdown, thereby preventing the third switches S3 from being damaged by excessive current.

[0193] FIG. 9 is a circuit diagram of a third exemplary semiconductor device in an embodiment of the present application.

[0194] In some embodiments, the driving circuit may further include a static balancing resistor R1, one end of which is connected to the anode of the semiconductor device and the other end of which is connected to the sampling module. The sampling module can monitor the voltage across the semiconductor device through the static balancing resistor R1 and send a control signal to the logic control module when the voltage across the semiconductor device exceeds its tolerance voltage.

[0195] In some embodiments, the drive circuit may further include a damping circuit module comprising a damping resistor R2 and a second capacitor C5. One end of the damping resistor R2 is connected to the anode of the semiconductor device, one end of the second capacitor C5 is connected to the other end of the damping resistor R2, and the other end is connected to the energy supply module. This allows the energy supply module to obtain input current through the second capacitor C5 and power the entire drive circuit.

[0196] FIG. 10 is a circuit diagram of a fourth exemplary semiconductor device in an embodiment of the present application.

[0197] Referring to FIG10 , in some embodiments, the drive circuit may further include a dynamic clamping module comprising a lightning arrester R3 and a sixth switch S6 , wherein one end of the lightning arrester R3 is connected to the anode of the semiconductor device, and the sixth switch S6 is connected to the other end of the lightning arrester R3 , and the other end is connected to the anode of the semiconductor device. A logic control module is connected to the sixth switch S6 and is configured to control the sixth switch S6 to close when the voltage across the semiconductor device exceeds the tolerance of the lightning arrester R3 .

[0198] When the arrester R3 is struck by lightning, it is turned on and the sixth switch S6 is controlled to be closed, thereby short-circuiting the semiconductor device and preventing the current generated by the lightning strike from damaging the semiconductor device. In one embodiment, the arrester R3 may be a metal oxide arrester R3.

[0199] In some embodiments, the drive circuit may further include a current sensor I disposed on the semiconductor device and connected to the sampling module. Optionally, the current sensor I is disposed on the cathode of the semiconductor device to monitor the current passing through the semiconductor device and provide an input to the sampling module.

[0200] It should be noted that the first energy storage element C1, the second energy storage element C2, and the third energy storage element C4 described above can each be composed of at least one capacitor connected in parallel. The first switch S1, the second switch S2, the third switch S3, the fourth switch S4, the fifth switch S5, and the sixth switch S6 can each be composed of at least one set of semiconductor devices or contactors with switching capabilities.

[0201] FIG11 is a flowchart of a first exemplary control method in an embodiment of the present application.

[0202] 11 , based on the above-mentioned semiconductor device, this embodiment further provides a method for controlling a semiconductor device, including steps 1110 to 1140 .

[0203] In step 1110 , it is determined whether the energy supply module is supplying power normally.

[0204] If the energy supply module is not supplying power normally, step 1111 is executed, and the fourth switch S4 is closed. After the fourth switch S4 is closed, the anode and cathode of the semiconductor device are connected to bypass the semiconductor device, avoiding the semiconductor device from being turned on when the energy supply module is abnormal, thereby ensuring reliable operation of the semiconductor device.

[0205] When the energy supply module supplies power normally, step 1112 is executed, and the fourth switch S4 is turned off, so that the semiconductor device is connected to the driving circuit, and the semiconductor device can be controlled by the driving circuit.

[0206] In step 1120, it is determined whether an activation signal is received.

[0207] If the activation signal is not received, the system continues to wait for receiving the activation signal. Optionally, the activation signal is an activation pulse.

[0208] Upon receiving the turn-on signal, step 1121 is executed, where the first switch S1 and the second switch S2 are closed. When the current in the first inductor L1 exceeds a first preset value, the second switch S2 is opened. After the first and second switches S1 and S2 are closed, the first energy storage element C1 discharges, causing the current in the first inductor L1 to increase. When the peak current in the first inductor L1 reaches the first preset value, the second switch S2 is controlled to open, allowing the current to enter the semiconductor device through the second positive electrode, the upper spring plate, the first positive electrode, and the gate of the semiconductor device. The current then flows sequentially through the semiconductor device's cathode, the first negative electrode, the lower spring plate, and the second negative electrode, returning to the positive electrode of the first energy storage element C1, thereby turning on the semiconductor device.

[0209] In step 1130 , it is determined whether a shutdown signal is received.

[0210] If the shutdown signal is not received, step 1110 is executed to determine whether the activation signal is received.

[0211] When the shutdown signal is received, step 1131 is executed, and the third switch S3 is closed. After the third switch S3 is closed, the second energy storage element C2 discharges. The current flows through the third switch S3, the second negative electrode, the lower spring piece, the first negative electrode, and the cathode of the semiconductor device into the semiconductor device. The current then flows through the gate of the semiconductor device, the first positive electrode, the upper spring piece, and the second positive electrode, and then returns to the second energy storage element C2, turning off the semiconductor device.

[0212] In step 1140, it is determined whether the drive loses power.

[0213] When the driver is not powered off, step 1110 is executed to determine whether an activation signal is received.

[0214] When the driver loses power, step 1111 is executed and the fourth switch S4 is closed. That is, after receiving the shutdown signal and shutting down the semiconductor device, the anode and cathode of the semiconductor device are connected again, so that the semiconductor device is bypassed to ensure that the semiconductor device will not be turned on.

[0215] FIG12 is a flowchart of a second exemplary control method in an embodiment of the present application.

[0216] 12 , in some embodiments, when the driving circuit includes a maintain-on module, the control method of the semiconductor device may include steps 1110 to 1150 .

[0217] In step 1150 , it is determined whether a maintain-on signal is received.

[0218] In the case that the maintenance activation signal is not received, step 1110 is executed to determine whether an activation signal is received.

[0219] When the maintain-on signal is received, step 1151 is executed, and the fifth switch S5 is cyclically closed and opened at a preset frequency. Each time the fifth switch S5 is closed and opened, it can output a forward current to the semiconductor device, so that the semiconductor device is continuously turned on.

[0220] FIG13 is a flowchart of a third exemplary control method in an embodiment of the present application.

[0221] 13 , in some embodiments, when the driving circuit further includes a dynamic uniform resistor, a damping loop module, a dynamic clamping module, and a current sensor I, the control method of the semiconductor device may include steps 1110 to 1170 .

[0222] In step 1130, it is determined whether a shutdown signal is received.

[0223] If the shutdown signal is not received, step 1110 is executed to determine whether the activation signal is received.

[0224] When the shutdown signal is received, step 1132 is executed to determine whether the current of the semiconductor device exceeds a second preset value.

[0225] When the current of the semiconductor device exceeds the second preset value, step 1110 is executed to determine whether a maintain-on signal is received, thereby avoiding damage to the semiconductor device caused by shutting down the semiconductor device when the current in the semiconductor device is large.

[0226] If the current of the semiconductor device does not exceed the second preset value, step 1131 is executed, and the third switch S3 is closed to ensure that the current of the semiconductor device is within a safe range before the semiconductor device is turned off.

[0227] In step 1160 , it is determined whether the voltage across the semiconductor device exceeds the tolerance value of the arrester R3 .

[0228] When the voltage across the semiconductor device does not exceed the tolerance value of the arrester R3, step 1140 is executed to determine whether the driver loses power.

[0229] If the voltage across the semiconductor device exceeds the tolerance of the arrester R3, step 1161 is executed, and the sixth switch S6 is closed. When the voltage across the semiconductor device exceeds the tolerance of the arrester R3, the arrester R3 is turned on, and the closing of the sixth switch S6 short-circuits the semiconductor device, thereby preventing the semiconductor device from being damaged by lightning.

[0230] In step 1170 , it is determined whether the voltage across the semiconductor device exceeds a tolerance value of the semiconductor device.

[0231] When the voltage across the semiconductor device does not exceed the tolerance of the semiconductor device, step 1140 is executed to determine whether the driver loses power.

[0232] When the voltage across the semiconductor device exceeds the tolerance of the semiconductor device, step 1121 is executed to close the first switch S1 and the second switch S2. When the current of the first inductor L1 exceeds a first preset value, the second switch S2 is opened to turn the semiconductor device back on.

[0233] The above-mentioned control method for semiconductor devices can dynamically control the voltage of the gate and cathode of the semiconductor device, making the semiconductor device less prone to voltage damage and improving the reliability and safety of the semiconductor device during operation.

[0234] The embodiments of the present application are described in detail above. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only intended to help understand the method and core ideas of the present application. At the same time, changes or modifications made by those skilled in the art based on the ideas of the present application, the specific implementation methods, and the scope of application of the present application, all fall within the scope of protection of the present application. In summary, the contents of this specification should not be construed as limiting the present application.

Claims

1. A driver, wherein, include: A fixing assembly, comprising a mounting member and a connecting member, wherein the connecting member is arranged on the mounting member, and the mounting member is provided with a first positive electrode and a first negative electrode; A driving assembly, comprising a driving board, wherein the driving board is provided with a second positive electrode and a second negative electrode; Wherein, the driving board is movably connected to the connecting member, so that the first positive electrode is connected to the second positive electrode, and the first negative electrode is connected to the second negative electrode.

2. The driver according to claim 1, wherein, The connecting piece comprises: Conductors, the number of which is at least two, the two conductors are spaced apart from each other on the mounting member and are respectively connected to the first positive electrode and the first negative electrode; The driving board is inserted between the two conductors, and the second positive electrode and the second negative electrode are connected to the two conductors respectively.

3. The driver according to claim 2, wherein, At least one of the conductors is a spring sheet, which comprises: A connecting portion, arranged on the mounting member; A contact portion, arranged on the connecting portion, a portion of which is spaced apart from the connecting portion, and a side away from the contact portion is connected to the driving board; The supporting portion is connected between the contact portion and the connecting portion.

4. The driver according to any one of claims 1-3, wherein, The drive assembly also includes a housing having a mounting cavity; Wherein, the driving board is arranged in the installation cavity.

5. The driver according to claim 4, wherein, One of the shell and the mounting piece is provided with a plug-in slot, and the other is provided with a plug-in piece, and the plug-in piece is plugged into the plug-in slot.

6. A semiconductor device, wherein, include: Semiconductor devices; The driver according to any one of claims 1 to 5, wherein the semiconductor device is disposed on the mounting member, the first positive electrode is connected to the gate of the semiconductor device, and the first negative electrode is connected to the cathode of the semiconductor device.

7. The semiconductor device according to claim 6, wherein, It also includes a heat sink, which is arranged on the semiconductor device.

8. The semiconductor device according to claim 6, wherein The driving board is provided with a driving circuit, and the driving circuit comprises: A logic control module is configured to receive and feedback a control signal; a triggering and turning-on module, configured to input a forward current into the semiconductor device when the logic control module receives a turning-on signal, so as to control the semiconductor device to turn on; a trigger shutdown module, configured to input a reverse current to the semiconductor device when the logic control module receives a shutdown signal, so as to control the semiconductor device to shut down; A power supply module, configured to supply power to the logic control module, the trigger-on module and the trigger-off module; a sampling module, configured to send an abnormal signal to the logic control module when the energy supply module operates abnormally; The bypass module is configured to connect the gate and cathode of the semiconductor device when the logic control module receives the abnormal signal.

9. The semiconductor device according to claim 7, wherein, The triggering and opening module comprises: a first energy storage element, whose positive electrode is connected to the second negative electrode, and whose negative electrode is connected to the second positive electrode; a first diode, an anode of which is connected to the second positive electrode; a second diode, a cathode of which is connected to the second positive electrode; a first inductor, an input end of which is connected to the cathode of the first diode, and an output end of which is connected to the anode of the second diode; a first switch, one end of which is connected to the second negative electrode, and the other end of which is connected to the input end of the first inductor; A second switch, one end of which is connected to the anode of the second diode and the other end of which is connected to the second positive electrode; Wherein, the logic control module is connected to the first switch and the second switch, and is configured to control the first switch and the second switch to close when receiving the turn-on signal, and control the second switch to open when the current of the first inductor exceeds a first preset value.

10. The semiconductor device according to claim 9, wherein, The trigger turn-off module includes: A second energy storage component, the positive electrode of which is connected to the second negative electrode; A third switch, one end of which is connected to the negative electrode of the second energy storage component and the other end of which is connected to the second positive electrode; Wherein, the logic control module is connected to the third switch and is configured to control the third switch to close when receiving the turn-off signal.

11. The semiconductor device according to claim 10, wherein, The bypass module includes: A fourth switch, one end of which is connected to the second positive electrode and the other end of which is connected to the second negative electrode; Wherein, the logic control module is connected to the fourth switch and is configured to control the fourth switch to close when receiving the abnormal signal.

12. The semiconductor device according to claim 11, wherein, The drive circuit further includes a maintenance trigger module, which includes: A third energy storage component, the positive electrode of which is connected to the second negative electrode; A second inductor, the input end of which is connected to the second negative electrode; A third inductor, the output end of which is connected to the second positive electrode; A third diode, the anode of which is connected to the output end of the second inductor and the cathode of which is connected to the input end of the third inductor; A first capacitor, one end of which is connected to the second negative electrode and the other end of which is connected to the output point of the third inductor; A fifth switch, one end of which is connected to the anode of the third diode and the other end of which is connected to the negative electrode of the third energy storage component; Wherein, the logic control module is connected to the fifth switch and is configured to control the fifth switch to continuously perform closing and opening actions at a preset frequency when receiving the maintenance trigger turn-on signal.

13. The semiconductor device according to claim 12, wherein, The drive circuit further includes a static voltage-sharing resistor, one end of which is connected to the anode of the semiconductor device and the other end of which is connected to the sampling module.

14. The semiconductor device according to claim 13, wherein, It further includes a damping loop module, which includes: A damping resistor, one end of which is connected to the anode of the semiconductor device; A second capacitor, one end of which is connected to the other end of the damping resistor and the other end of which is connected to the power supply module.

15. The semiconductor device according to claim 14, wherein, The drive circuit further includes a dynamic clamping module, which includes: A lightning arrester, one end of which is connected to the anode of the semiconductor device; A sixth switch, one end of which is connected to the other end of the lightning arrester and the other end of which is connected to the anode of the semiconductor device; Wherein, the logic control module is connected to the sixth switch and is configured to control the sixth switch to close when the voltage value across the semiconductor device is greater than the tolerance value of the lightning arrester.

16. The semiconductor device according to claim 15, wherein, The drive circuit further includes a current sensor, which is arranged on the semiconductor device and is connected to the sampling module.

17. A control method for a semiconductor device according to any one of claims 11-16, wherein, It includes: Judging whether the power supply module supplies power normally; When the power supply module does not supply power normally, the fourth switch closes; When the power supply module supplies power normally, the fourth switch opens; Judging whether a turn-on signal is received; Upon receiving the enabling signal, the first switch and the second switch close, and the second switch opens when the current in the first inductor exceeds a first preset value; Determine whether a turn-off signal is received; If the turn-off signal is not received, determine whether the enabling signal is received; Upon receiving the turn-off signal, the third switch closes; Determine whether the driver is powered off; If the driver is not powered off, determine whether the enabling signal is received; When the driver is powered off, the fourth switch closes.

18. A control method for a semiconductor device according to any one of claims 12-16, wherein, Comprising: Determine whether the power supply module is normally powered; If the power supply module is not normally powered, the fourth switch closes; If the power supply module is normally powered, the fourth switch opens; Determine whether an enabling signal is received; Upon receiving the enabling signal, the first switch and the second switch close, and the second switch opens when the current in the first inductor exceeds a first preset value; Determine whether a hold-enable signal is received; If the hold-enable signal is not received, determine whether the enabling signal is received; Upon receiving the hold-enable signal, the fifth switch closes and opens cyclically according to the preset frequency; Determine whether a turn-off signal is received; If the turn-off signal is not received, determine whether the enabling signal is received; Upon receiving the turn-off signal, the third switch closes; Determine whether the driver is powered off; If the driver is not powered off, determine whether the enabling signal is received; When the driver is powered off, the fourth switch closes.

19. A control method for a semiconductor device according to claim 15 or 16, wherein, Comprising: Determine whether the power supply module is normally powered; If the power supply module is not normally powered, the fourth switch closes; If the power supply module is normally powered, the fourth switch opens; Determine whether an enabling signal is received; Upon receiving the enabling signal, the first switch and the second switch close, and the second switch opens when the current in the first inductor exceeds a first preset value; Determine whether a hold-enable signal is received; If the hold-enable signal is not received, determine whether the enabling signal is received; Upon receiving the hold-enable signal, the fifth switch closes and opens cyclically according to the preset frequency; Determine whether a turn-off signal is received; If the turn-off signal is not received, determine whether the enabling signal is received; Upon receiving the turn-off signal, determine whether the current in the semiconductor device exceeds a second preset value; If the current in the semiconductor device exceeds the second preset value, determine whether the hold-enable signal is received; If the current in the semiconductor device does not exceed the second preset value, the third switch closes; Determine whether the voltage value across the semiconductor device exceeds the withstand value of the arrester; If the voltage value across the semiconductor device does not exceed the withstand value of the arrester, determine whether the driver is powered off; When the voltage value across the semiconductor device exceeds the tolerance value of the arrester, the sixth switch closes; Determine whether the voltage value across the semiconductor device exceeds the tolerance value of the semiconductor device; When the voltage value across the semiconductor device does not exceed the tolerance value of the semiconductor device, determine whether the driver loses power; When the voltage value across the semiconductor device exceeds the tolerance value of the semiconductor device, the first switch and the second switch close, and when the current in the first inductor exceeds a first preset value, the second switch opens; Wherein, when the driver does not lose power, determine whether the turn-on signal is received; When the driver loses power, the fourth switch closes.

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