Processing system and processing method

Abstract

A processing system for mounting a plurality of types of dies on a target substrate, the system including a plurality of types of bonding devices for bonding the dies held by a carrier to the target substrate, wherein the accuracy of bonding the dies to the target substrate is different for the plurality of types of bonding devices.

Description

Processing system and processing method

[0001] The present disclosure relates to a processing system and a processing method.

[0002] Patent Document 1 discloses a chip-on-wafer bonding method for mounting chips on a wafer, in which a surface activation process and a hydrophilization process are performed on the chips, a surface activation process and a hydrophilization process are performed on the substrate, and then multiple chips are bonded to the substrate.

[0003] Patent No. 6337400

[0004] The technology disclosed herein efficiently mounts multiple types of die onto a target substrate.

[0005] One aspect of the present disclosure is a processing system for mounting multiple types of dies on a target substrate, which has multiple types of bonding devices that bond the dies held in a carrier to the target substrate, and the multiple types of bonding devices have different bonding accuracy of the dies to the target substrate.

[0006] According to the present disclosure, multiple types of dies can be efficiently mounted on a target substrate.

[0007] FIG. 1 is a plan view showing an outline of the configuration of a wafer on which multiple types of dies are mounted. FIG. 2 is a cross-sectional view showing an outline of the configuration of a first carrier that holds a first die. FIG. 3 is a cross-sectional view showing an outline of the configuration of a first carrier that holds a first die. FIG. 4 is a cross-sectional view showing an outline of the configuration of a second carrier that holds a second die. FIG. 5 is a cross-sectional view showing an outline of the configuration of a power supply unit and a static eliminator. FIG. 6 is an explanatory diagram showing how a first die is electrostatically attracted to a first carrier. FIG. 7 is a plan view showing an outline of the configuration of a processing system. FIG. 8 is a side view showing an outline of the configuration of a processing system. FIG. 9 is a flow diagram showing main steps of a die-on wafer manufacturing process. FIG. 10 is an explanatory diagram showing a schematic diagram of some steps of a die-on wafer manufacturing process. FIG. 11 is a perspective view showing an outline of the configuration of a first bonding apparatus. FIG. 12 is a cross-sectional view showing an outline of the configuration of an air supply unit. FIG. 13 is an explanatory diagram showing how a first die is detached from a first carrier. FIG. 14 is a side view and a plan view showing an outline of the configuration of a head unit. FIG. 15 is an explanatory diagram showing a schematic diagram of some steps of a bonding process in the first bonding apparatus. FIG. 1 is an explanatory diagram schematically showing some steps of the bonding process in the first bonding apparatus. FIG. 2 is an explanatory diagram schematically showing some steps of the bonding process in the first bonding apparatus. FIG. 3 is an explanatory diagram schematically showing some steps of the bonding process in the first bonding apparatus. FIG. 4 is an explanatory diagram schematically showing some steps of the bonding process in the first bonding apparatus. FIG. 5 is an explanatory diagram schematically showing some steps of the bonding process in the first bonding apparatus. FIG. 6 is a plan view showing an outline of the configuration of a wafer on which multiple types of dies are mounted in another embodiment. FIG. 7 is a plan view showing an outline of the configuration of a processing system in another embodiment. FIG. 8 is a perspective view showing an outline of the configuration of a bonding apparatus in another embodiment. FIG. 9 is an explanatory diagram showing how a bond head is replaced.

[0008] In recent years, in the manufacturing process of semiconductor devices, in response to demands for even higher performance and higher density of devices, a chip-on-wafer (CoW) manufacturing process has been studied as one method of three-dimensional packaging technology. Chip-on-wafer manufacturing is carried out by a method disclosed in Patent Document 1, for example.

[0009] In a chip-on-wafer manufacturing process (hereinafter referred to as a "die-on-wafer manufacturing process"), as disclosed in Patent Document 1, a semiconductor chip (hereinafter referred to as a "die") is subjected to a surface activation treatment and a hydrophilization treatment, and a semiconductor substrate (hereinafter referred to as a "wafer") is subjected to a surface activation treatment and a hydrophilization treatment, and then multiple dies are bonded to the wafer. The bonding of multiple dies to the wafer is performed, for example, using a bonding device. In the bonding device, the die, which is attached to the tip (lower end) of a head unit, is positioned opposite a wafer placed on a stage. The head unit is then lowered, and the die is placed on the wafer and bonded.

[0010] In a die-on-wafer manufacturing process, multiple types of die may be mounted on a wafer. The die types vary, including dies requiring different bonding accuracy. For example, high bonding accuracy is required for dies on which devices such as circuits are formed (hereinafter, such dies may be referred to as "high-precision dies"), whereas low bonding accuracy is required for dies on which devices such as circuits are not formed (hereinafter, such dies may be referred to as "low-precision dies"). In such cases, it typically takes a long time to bond a high-precision die to a wafer, while it takes a short time to bond a low-precision die to a wafer. However, for example, if a bonding machine with the same specifications is used to bond both a high-precision die and a low-precision die, bonding the low-precision die also takes a long time, reducing the throughput of the die-on-wafer manufacturing process. Therefore, there is room for improvement in mounting multiple types of die on a wafer.

[0011] The technology disclosed herein efficiently mounts multiple types of dies on a target substrate. Hereinafter, a processing system and a processing method according to the present embodiment will be described with reference to the drawings. Note that in this specification and the drawings, elements having substantially the same functional configurations are designated by the same reference numerals, and redundant description will be omitted.

[0012] In this embodiment, as shown in Fig. 1, multiple types of dies D1 and D2 are mounted on a wafer W as a target substrate. Specifically, multiple first dies D1 held on a first carrier C1 as shown in Figs. 2 and 3 and multiple second dies D2 held on a second carrier C2 as shown in Figs. 4 and 5 are bonded to the wafer W as a mounting target.

[0013] 1, the wafer W on which the first die D1 and the second die D2 are mounted is a semiconductor wafer such as a silicon substrate or a glass substrate used in the manufacturing process of semiconductor devices. For example, the diameter of the wafer W is 300 mm and the thickness is approximately 800 μm. The surface of the wafer W on which the first die D1 and the second die D2 are mounted is referred to as the front surface Wa, and the surface opposite to the front surface Wa is referred to as the back surface Wb.

[0014] The number and arrangement of the first die D1 and the second die D2 to be mounted on the front surface Wa of the wafer W are set to a desired pattern. A device layer (not shown) may be formed on the front surface Wa. This device layer is formed to correspond to a device layer E of the first die D1, which will be described later.

[0015] 2 and 3, the first carrier C1 holds a plurality of first dies D1. The first die D1 has a configuration in which, for example, a silicon layer S1 and a device layer E are stacked. A circuit is formed in the device layer E. As will be described later, when the first die D1 is bonded to the wafer W, high bonding accuracy is required for the first die D1, i.e., the first die D1 is a high-precision die. Note that the surface of the first die D1 on which the device layer E is formed is referred to as the front surface D1a, and the surface opposite to the front surface D1a is referred to as the back surface D1b.

[0016] 4 and 5, the second carrier C2 holds a plurality of second dies D2. Each second die D2 has a structure in which, for example, a silicon layer S2 and an oxide film F are stacked. No devices such as circuits are formed on the oxide film F. As will be described later, when the second die D2 is bonded to the wafer W, low bonding accuracy is required for the second die D2; that is, the second die D2 is a low-precision die. The surface of the second die D2 on which the oxide film F is formed is referred to as the front surface D2a, and the surface opposite to the front surface D2a is referred to as the back surface D2b.

[0017] As described above, the first die D1 and the second die D2 are different types of dies. The first die D1 has a circuit formed thereon, whereas the second die D2 does not. Therefore, the joining accuracy required for the first die D1 is relatively high, while the joining accuracy required for the second die D2 is relatively low. In addition, the shapes (size and thickness) of the first die D1 and the second die D2 are also different. Therefore, the number of first dies D1 held by the first carrier C1 and the number of second dies D1 held by the second carrier C2 are also different.

[0018] The first carrier C1 and the second carrier C2 have the same configuration. First, the configuration of the first carrier C1 will be described.

[0019] 2 and 3, the first carrier C1 has an upper surface that serves as an adsorption surface for holding a plurality of first dies D1 by electrostatic and vacuum adsorption. The first carrier C1 adsorbs and holds the silicon layer S1 on the back surface D1b of each first die D1. The first carrier C1 has a structure in which a main body M1 and an insulating layer N1 are stacked. Note that the main body M1 does not have an electrode portion (electrode wiring pattern) for electrostatically adsorbing the first dies D1.

[0020] The main body M1 has approximately the same diameter and thickness as the wafer W on which the first die D1 is mounted, e.g., a diameter of 300 mm and a thickness of approximately 800 μm. The main body M1 is made of any conductive material, such as silicon, aluminum, an aluminum alloy, stainless steel, alumina, zirconia, SiC, or titanium. In other words, a silicon substrate may be used as the main body M1. The main body M1 may have approximately the same diameter as the wafer W on which the first die D1 is mounted, but may have a different thickness (e.g., 500 μm to 1000 μm) from the wafer.

[0021] The main body M1 has a plurality of through holes H1 formed therethrough in the thickness direction. The through holes H1 can be formed at any position on the suction surface of the first carrier C1. For example, the through holes H1 may be formed one for each of the first dies D1 held by the first carrier C1, in other words, the same number as the number of first dies D1 held by the first carrier C1. Alternatively, for example, the through holes H1 may be formed in a number corresponding to each of the first dies D1 held by the first carrier C1, in other words, a number greater than the number of first dies D1 held by the first carrier C1.

[0022] Although the number, size, spacing, and arrangement of the through holes H1 are not particularly limited, it is desirable to determine the number, size, and spacing so as to ensure the strength (rigidity) of the first carrier C1 so that deformation such as bending does not occur. For example, the diameter of the through holes H1 is 0.5 mm to 5.0 mm, and the spacing (the center-to-center distance between adjacent through holes H1) is 0.5 mm to 5.0 mm.

[0023] The insulating layer N1 is formed on the surface of the main body M1 and constitutes the adsorption surface of the first die D1 on the first carrier C1. The insulating layer N1 has no through-holes and covers the surface of the main body M1. The insulating layer N1 has a thickness of, for example, several tens of μm, which is sufficient to hold the first die D1 on the first carrier C1 by electrostatic adsorption.

[0024] The insulating layer N1 is made of a flexible and insulating material, such as polyimide or EVA (ethylene-vinyl acetate copolymer). In this embodiment, "the insulating layer N1 is flexible" means that the insulating layer N1 on the main body M1 has an elastic modulus of 2 GPa or less, preferably 0.5 GPa or less. In this embodiment, "the insulating layer N1 has insulating properties" means that the insulating layer N1 on the main body M1 has a breakdown voltage of 30 kV or more, preferably 40 kV or more.

[0025] 4 and 5, the second carrier C2 has the same configuration as the first carrier C1, as described above, and is configured by stacking a main body M2 and an insulating layer N2. The configurations of the main body M2 and the insulating layer N2 are the same as those of the main body M1 and the insulating layer N1, respectively. The main body M2 has a plurality of through holes H2 formed therethrough in the thickness direction. Because the second die D2 held by the second carrier C2 is a different type from the first die D1, the number, size, spacing, and arrangement of the through holes H2 may be different from those of the through holes H1 of the first carrier C1.

[0026] The first carrier C1 in this embodiment is configured as described above, and attracts and holds the first die D1 on its attracting surface by generating an electrostatic (Coulomb) force between the first carrier C1 and the first die D1. Similarly, the second carrier C2 attracts and holds the second die D2 on its attracting surface by generating an electrostatic (Coulomb) force between the second carrier C2 and the second die D2.

[0027] The method for suction-holding the first die D1 by the first carrier C1 will be described below, but the method for suction-holding the second die D2 by the second carrier C2 is also similar. As shown in Figure 6, when the first carrier C1 suction-holds the first die D1, for example, a power supply unit 500 and a static eliminator 510 are used.

[0028] The power supply unit 500 is disposed, for example, below the first carrier C1. The power supply unit 500 has a power feed pin 501 that contacts the main body M1 to apply a voltage, a power supply source 502 that supplies power to the power feed pin 501, and a ground wire 503. For example, the power feed pin 501 is configured to be able to move up and down below the first carrier C1 and contacts the main body M1. Note that the arrangement and configuration of the power supply unit 500 are not limited to this, and it is sufficient that the power supply unit 500 can apply an appropriate voltage to the first carrier C1.

[0029] The charge eliminator 510 is disposed above the first carrier C1, for example. The charge eliminator 510 has a charge eliminator pin 511 that contacts the first die D1 on the first carrier C1 to neutralize (ground) the first die D1, and a ground wire 512 connected to the charge eliminator pin 511. For example, the charge eliminator pin 511 is configured to be movable above the first carrier C1 and can contact and ground the first die D1 disposed at any position on the first carrier C1. The arrangement and configuration of the charge eliminator 510 are not limited to this, and may be any arrangement as long as it can appropriately neutralize the first die D1.

[0030] 7A, all the first dies D1 are placed at the suction holding positions of the first carrier C1. Then, a voltage (positive (+) charge in the illustrated example) is applied to the first carrier C1 via the power supply pin 501 of the power supply unit 500, and the main body M1 of the first carrier C1 is positively charged.

[0031] When the main body M1 is positively charged, a charge of the opposite polarity (i.e., negative (-)) to the charge accumulated in the main body M1 is accumulated on the back surface D1b of the first die D1 across the insulating layer N1, as shown in Figure 7(b). Also, a charge of the same polarity (i.e., positive (+)) as the charge accumulated in the main body M1 is accumulated on the front surface D1a of the first die D1.

[0032] 7C, the charge eliminating pin 511 of the charge eliminating unit 510 is brought into contact with the front surface D1a side (opposite the back surface D1b, which is the holding surface) of the first die D1. As a result, the positive charge on the front surface D1a side of the first die D1 is eliminated (earthed) while leaving behind negative charges that attract the positive charges on the main body M1.

[0033] Thereafter, when the charge removal section 510 is retracted, a potential difference occurs between the main body M1 of the first carrier C1 and the first die D1 across the insulating layer N1, generating an electrostatic force that attracts them to each other, and the first die D1 is adsorbed to the adsorption surface of the first carrier C1 by the electrostatic force.

[0034] In this embodiment, the main body M1 of the first carrier C1 functions as a pseudo-unipolar electrode, and the first die D1 can be attracted and held on the chucking surface via the insulating layer N1 without forming an electrode wiring pattern inside the main body M1. That is, the insulating layer N1 serves to insulate the main body M1 from the electric charge applied thereto, thereby maintaining the electric charge accumulated in the main body M1.

[0035] In addition, in the first carrier C1 of this embodiment, the insulating layer N1 is formed of a flexible material with a small elastic modulus. After the first die D1 is placed on the first carrier C1, a gap is formed between the first die D1 and the insulating layer N1 before the first die D1 is electrostatically attracted and held. Due to the flexibility of the insulating layer N1, when the first die D1 is electrostatically attracted to the insulating layer N1, air escapes from between the first die D1 and the insulating layer N1, creating a pseudo-vacuum state between the first die D1 and the insulating layer N1. As a result, in addition to the electrostatic attraction between the first carrier C1 and the first die D1, a vacuum attraction force formed by the pseudo-vacuum state is generated, and a strong holding state is formed using both the electrostatic attraction force and the vacuum attraction force.

[0036] The timing of applying a voltage to the main body M1 and the timing of de-electrifying the first die D1 are not limited to the above examples. That is, for example, a voltage may be applied to the main body M1 in advance before the first die D1 is placed on the suction surface (when the first die D1 is not on the first carrier C1). Alternatively, a voltage may be applied after the first die D1 is placed on the suction surface (after all the first dies D1 are placed on the first carrier C1) as shown in FIG. 7 . Alternatively, a voltage may be applied to the main body M1 simultaneously with the placement of the first die D1 on the suction surface. The de-electrification of the first die D1 on the first carrier C1 may be performed simultaneously with the application of a voltage after the first die D1 is placed on the suction surface, or after the placement of the first die D1 on the suction surface is completed and the voltage is applied to hold the first die D1 by suction.

[0037] However, if a voltage is applied to the main body M1 when the first die D1 is not placed on the chucking surface, particles may be attracted to the chucking surface by the generated electrostatic force and adhere to the chucking surface. In view of this, it is preferable to apply a voltage to the main body M1 after the first die D1 is placed on the chucking surface or simultaneously with the placement of the first die D1 on the chucking surface. More preferably, it is desirable to apply a voltage to the main body M1 after all the first dies D1 are placed on the first carrier C1.

[0038] The method for holding the first die D1 by the first carrier C1 is not limited to this embodiment. For example, the first die D1 may be pressed against the first carrier C1 to be pressure-bonded. In this case, pressing the first die D1 against the first carrier C1 removes air from between the first die D1 and the insulating layer N1, generating a vacuum suction force between the first die D1 and the insulating layer N1, thereby suction-holding the first die D1 to the first carrier C1. In this case, the material of the main body M1 of the first carrier C1 does not need to be conductive and is optional. Furthermore, the material of the insulating layer N1 does not need to be insulating and is optional.

[0039] Alternatively, for example, an adhesive sheet may be used for the insulating layer N1 of the first carrier C1. In this case, adhesive force is generated between the first die D1 and the insulating layer N1, and the first die D1 is held on the first carrier C1. Alternatively, a thermal release sheet may be used for the insulating layer N1. The thermal release sheet is a sheet that has adhesive force at room temperature but is released when heated. As will be described later, when the first die D1 is bonded to the wafer W, the first die D1 is released from the first carrier C1. At this time, heating the insulating layer N1 can make it easier to release the first die D1.

[0040] Alternatively, for example, an intermolecular force, such as van der Waals force, may be generated between the insulating layer N1 of the first carrier C1 and the first die D1, thereby holding the first die D1 on the first carrier C1. In such a case, for example, the insulating layer N1 may be heated to fluidize (transition into glass), and then the first die D1 may be pressed against the insulating layer N1 to adhere to it. Any method for heating the insulating layer N1 may be used. For example, a heating mechanism may be provided on a stage (not shown) holding the first carrier C1 to heat the insulating layer N1. This adhesion then generates an intermolecular force between the insulating layer N1 and the first die D1, thereby holding the first die D1 on the first carrier C1. Note that if an intermolecular force is generated simply by heating the insulating layer N1, the step of adhering the first die D1 to the insulating layer N1 may be omitted.

[0041] Next, a processing system 1 according to this embodiment will be described. In the processing system 1, a plurality of first dies D1 held in a first carrier C1 and a plurality of second dies D2 held in a second carrier C2 are mounted on a wafer W. Fig. 8 is a plan view showing an outline of the configuration of the processing system 1. Figs. 9 and 10 are side views showing an outline of the configuration of the processing system 1.

[0042] 8 to 10, the processing system 1 has a configuration in which a load / unload station 10 and a processing station 20 are integrally connected. In the load / unload station 10, for example, FOUPs Fw, Fc1, and Fc2, each capable of accommodating a plurality of wafers W, a plurality of first carriers C1, and a plurality of second carriers C2, are loaded and unloaded between the load / unload station 10 and the outside. The processing station 20 is equipped with various processing devices for implementing a series of processes described below.

[0043] The loading / unloading station 10 is provided with a FOUP mounting table 30. In the illustrated example, a plurality of FOUPs, for example, two FOUPs Fw, one FOUP Fc1, and one FOUP Fc2, are placed on the FOUP mounting table 30, lined up in the Y-axis direction. Note that the number and arrangement of the FOUPs Fw, Fc1, and Fc2 placed on the FOUP mounting table 30 are not limited to those in this embodiment and can be determined arbitrarily.

[0044] A transfer device 40 is provided adjacent to the FOUP mounting table 30 on the positive side of the X-axis. The transfer device 40 is configured to be movable on a transfer path 41 extending in the Y-axis direction. The transfer device 40 also has, for example, two transfer arms 42, 42 that hold and transfer wafers W, first carriers C1, and second carriers C2. Each transfer arm 42 is configured to be movable horizontally, vertically, around a horizontal axis, and around a vertical axis. Note that the configuration of the transfer arms 42 is not limited to this embodiment and may have any configuration. The transfer device 40 is configured to transfer wafers W, first carriers C1, and second carriers C2 to and from the FOUPs Fw, Fc1, and Fc2 on the FOUP mounting table 30, a transition device 60 (described later), and a buffer device 61 (described later).

[0045] The processing station 20 is provided with, for example, three processing blocks 21 to 23. The first processing block 21, the second processing block 22, and the third processing block 23 are arranged in this order from the negative side to the positive side of the X axis.

[0046] The first processing block 21 is provided with a transfer device 50, a transition device 60, a buffer device 61, an inspection device 70, a wafer surface modification device 71 as a substrate surface device, a die surface modification device 72, a wafer surface cleaning device 73 as a substrate surface cleaning device, a die surface cleaning device 74, a wafer surface hydrophilization device 75 as a substrate surface hydrophilization device, and a die surface hydrophilization device 76. The number and arrangement of these various processing devices are not limited to those in this embodiment and can be determined as desired.

[0047] The transfer device 50 is configured to be movable on a transfer path 51 extending in the X-axis direction. The transfer device 50 also has, for example, two transfer arms 52, 52 that hold and transfer the wafer W, the first carrier C1, and the second carrier C2. Each transfer arm 52 is configured to be movable horizontally, vertically, around a horizontal axis, and around a vertical axis, and is configured to be able to transfer the wafer W, the first carrier C1, and the second carrier C2 to each of the devices 60, 61, 70 to 76 in the first processing block 21, a transition device 90 described later, and a buffer device 91 described later.

[0048] The transition device 60 and the buffer device 61 are disposed on the negative side of the X-axis of the transport device 50. The transition device 60 and the buffer device 61 are stacked in this order vertically from the top. Note that a plurality of buffer devices 61 may be stacked.

[0049] The transition device 60 transfers the wafers W, the first carrier C1, and the second carrier C2 between the transfer device 40 and the transfer device 50. The buffer device 61 temporarily stores the wafers W, the first carrier C1, and the second carrier C2.

[0050] The inspection device 70, wafer surface modification device 71, and die surface modification device 72 are arranged on the positive side of the Y axis of the transfer device 50. The inspection device 70, wafer surface modification device 71, and die surface modification device 72 are stacked vertically in this order from the top. The wafer surface modification device 71 and die surface modification device 72 are arranged side by side in this order from the negative side to the positive side of the X axis.

[0051] The inspection device 70 inspects a wafer W on which a first die D1 and a second die D2 are mounted. The inspection device 70, for example, takes an image of the wafer W and inspects for the presence or absence of voids between the surface Wa of the wafer W and the dies D1, D2. Note that the inspection device 70 may also inspect the positions of the dies D1, D2 bonded to the surface Wa of the wafer W.

[0052] The wafer surface modification device 71 uses plasma to modify the surface Wa of the wafer W. In the wafer surface modification device 71, for example, under a reduced pressure atmosphere, oxygen gas or nitrogen gas serving as a processing gas is excited to be turned into plasma and ionized. The oxygen ions or nitrogen ions are irradiated onto the surface Wa of the wafer W, and the surface Wa is subjected to plasma processing and modified.

[0053] Like the wafer surface modification device 71, the die surface modification device 72 also uses plasma to modify the surfaces D1a and D2a of the dies D1 and D2. In the die surface modification device 72, for example, under a reduced pressure atmosphere, oxygen gas or nitrogen gas serving as a processing gas is excited to be turned into plasma and ionized. The oxygen ions or nitrogen ions are irradiated onto the surfaces D1a and D2a of the dies D1 and D2 held by the carriers C1 and C2, and the surfaces D1a and D2a are plasma-processed and modified.

[0054] The wafer surface cleaning device 73, die surface cleaning device 74, wafer surface hydrophilization device 75, and die surface hydrophilization device 76 are arranged on the negative side of the Y axis of the transfer device 50. The wafer surface cleaning device 73 and die surface cleaning device 74, and the wafer surface hydrophilization device 75 and die surface hydrophilization device 76 are stacked vertically from the top in this order. The wafer surface cleaning device 73 and die surface cleaning device 74 are arranged side by side in this order from the negative side to the positive side of the X axis. The wafer surface hydrophilization device 75 and die surface hydrophilization device 76 are arranged side by side in this order from the negative side to the positive side of the X axis.

[0055] The wafer surface cleaning device 73 cleans the front surface Wa of the wafer W. In the wafer surface cleaning device 73, while the wafer W held by, for example, a spin chuck is rotated, a cleaning liquid such as pure water, DI water, DHF, or IPA is supplied onto the wafer W. The supplied cleaning liquid then spreads over the front surface Wa of the wafer W, cleaning the front surface Wa.

[0056] The die surface cleaning device 74 also cleans the surfaces D1a and D2a of the dies D1 and D2, similarly to the wafer surface cleaning device 73. In the die surface cleaning device 74, a cleaning liquid is supplied onto the dies D1 and D2 held by the carriers C1 and C2 while the carriers C1 and C2 held by the chucks are rotated. The supplied cleaning liquid then spreads over the surfaces D1a and D2a of the dies D1 and D2, cleaning the surfaces D1a and D2a.

[0057] The wafer surface hydrophilization device 75 hydrophilizes and rinses the surface Wa of the wafer W. In the wafer surface hydrophilization device 75, pure water is supplied onto the wafer W while the wafer W held by, for example, a spin chuck is being rotated. The supplied pure water then spreads over the surface Wa of the wafer W, hydrophilizing the surface Wa. The surface Wa is also rinsed with the pure water.

[0058] Like the wafer surface hydrophilization device 75, the die surface hydrophilization device 76 hydrophilizes and rinses the surfaces D1a and D2a of the dies D1 and D2. In the die surface hydrophilization device 76, a cleaning liquid is supplied onto the dies D1 and D2 held by the carriers C1 and C2 while the carriers C1 and C2 held by, for example, spin chucks are rotated. The supplied cleaning liquid then spreads over the surfaces D1a and D2a of the dies D1 and D2, hydrophilizing the surfaces D1a and D2a. The surfaces D1a and D2a are also rinsed with pure water.

[0059] The second processing block 22 is provided with a transport device 80, a transition device 90, a buffer device 91, and a first bonding device 100. The number and arrangement of these various processing devices are not limited to this embodiment and can be determined arbitrarily.

[0060] The transfer device 80 is configured to be movable on a transfer path 81 extending in the X-axis direction. The transfer device 80 also has, for example, two transfer arms 82, 82 that hold and transfer the wafer W, the first carrier C1, and the second carrier C2. Each transfer arm 82 is configured to be movable horizontally, vertically, around a horizontal axis, and around a vertical axis, and is configured to be able to transfer the wafer W, the first carrier C1, and the second carrier C2 to each of the devices 90, 91, 100 in the second processing block 22, a transition device 120 described later, and a buffer device 121 described later.

[0061] The transition device 90 and the buffer device 91 are disposed on the negative side of the X-axis of the transport device 80. The transition device 90 and the buffer device 91 are stacked in this order vertically from the top. Note that a plurality of buffer devices 91 may be stacked.

[0062] The transition device 90 transfers the wafers W, the first carrier C1, and the second carrier C2 between the transfer device 50 and the transfer device 80. The buffer device 91 temporarily stores the wafers W, the first carrier C1, and the second carrier C2.

[0063] For example, two first bonding apparatuses 100 are arranged in the positive direction of the Y axis of the transfer apparatus 80, and two are arranged in the negative direction of the Y axis of the transfer apparatus 80. The first bonding apparatus 100 bonds a first die D1 (high-precision die) held by a first carrier C1 to a wafer W. That is, high bonding precision is required of the first bonding apparatus 100 (hereinafter, such a bonding apparatus may be referred to as a "high-precision bonding apparatus"). The configuration of the first bonding apparatus 100 will be described in detail later.

[0064] The third processing block 23 is provided with a transport device 110, a transition device 120, a buffer device 121, and a second bonding device 130. The number and arrangement of these various processing devices are not limited to those in this embodiment and can be determined arbitrarily.

[0065] The transfer device 110 is configured to be movable on a transfer path 111 extending in the X-axis direction. The transfer device 110 also has, for example, two transfer arms 112, 112 that hold and transfer the wafer W and the second carrier C2. Each transfer arm 112 is configured to be movable horizontally, vertically, around a horizontal axis, and around a vertical axis, and is configured to be able to transfer the wafer W and the second carrier C2 to each of the devices 120, 121, and 130 in the third processing block 23.

[0066] The transition device 120 and the buffer device 121 are disposed on the negative side of the X-axis of the transport device 110. The transition device 120 and the buffer device 121 are stacked in this order vertically from the top. Note that a plurality of buffer devices 121 may be stacked.

[0067] The transition device 120 transfers the wafers W and the second carrier C2 between the transfer device 80 and the transfer device 110. The buffer device 121 temporarily stores the wafers W, the first carrier C1, and the second carrier C2.

[0068] For example, two second bonding devices 130 are arranged in the positive direction of the Y axis of the transfer device 110, and two are arranged in the negative direction of the Y axis of the transfer device 110. The second bonding device 130 bonds a second die D2 (low-precision die) held by a second carrier C2 to a wafer W. In other words, the bonding precision required of the second bonding device 130 is low (hereinafter, such a bonding device may be referred to as a "low-precision bonding device"). The configuration of the second bonding device 130 will be described in detail later.

[0069] The processing system 1 described above is provided with at least one control device 140. The control device 140 processes computer-executable instructions that cause the processing system 1 to perform the various steps described in this disclosure. The control device 140 may be configured to control each element of the processing system 1 to perform the various steps described herein. In one embodiment, part or all of the control device 140 may be included in the processing system 1. The control device 140 may include a processing unit, a storage unit, and a communication interface. The control device 140 may be implemented, for example, by a computer. The processing unit may be configured to read from the storage unit a program that provides logic or routines that enable various control operations and execute the read program to perform various control operations. This program may be stored in the storage unit in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit and read from the storage unit by the processing unit for execution. The medium may be various computer-readable storage media or a communication line connected to the communication interface. The storage medium may be temporary or non-temporary. The processing unit may be a CPU (Central Processing Unit) or one or more circuits. The storage unit may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface may communicate with the processing system 1 via a communication line such as a LAN (Local Area Network).

[0070] Although the processing system 1 according to this embodiment is configured as described above, other processing devices may be further arranged in the processing system 1 depending on the purpose, and some processing devices may be arranged outside the processing system 1 depending on the purpose.

[0071] Next, a description will be given of a die-ion wafer manufacturing process performed in the processing system 1 configured as described above. Fig. 11 is a flow diagram showing the main steps of the die-ion wafer manufacturing process. Fig. 12 is an explanatory diagram schematically showing some steps of the die-ion wafer manufacturing process.

[0072] First, FOUPs Fw, Fc1, and Fc2, each containing a plurality of wafers W, a first carrier C1, and a second carrier C2, are placed on the FOUP mounting table 30 of the carry-in / out station 10. At this time, a plurality of first dies D1 are held in the first carrier C1 as shown in Fig. 12(a), and a plurality of second dies D2 are held in the second carrier C2 as shown in Fig. 12(b). As described above, the first dies D1 are high-precision dies, and the second dies D2 are low-precision dies.

[0073] Next, the transfer device 40 removes the wafer W from the FOUP Fw and transfers it to the transition device 60. The wafer W transferred to the transition device 60 is transferred by the transfer device 50 to the wafer front surface cleaning device 73. In the wafer front surface cleaning device 73, the front surface Wa of the wafer W is cleaned with, for example, a cleaning liquid (St1 in FIG. 11 ).

[0074] Next, the wafer W is transferred by the transfer device 50 to the wafer surface modification device 71. In the wafer surface modification device 71, a plasma process is performed, for example, under a reduced pressure atmosphere, to modify the surface Wa of the wafer W (St2 in FIG. 11).

[0075] Next, the wafer W is transferred by the transfer device 50 to the wafer surface hydrophilization device 75. In the wafer surface hydrophilization device 75, for example, pure water is used to attach hydroxyl groups (silanol groups) to the surface Wa of the wafer W modified in St2, thereby hydrophilizing the surface Wa. The surface Wa is also rinsed with the pure water (St3 in FIG. 11 ).

[0076] Next, the wafer W is transferred by the transfer device 50 to the transition device 90, and further transferred by the transfer device 80 to the first bonding device 100. Note that if the bonding process has already been performed in the four first bonding devices 100, the wafer W is transferred to the buffer device 91 and temporarily stored in the buffer device 91.

[0077] While the wafer W is undergoing the above-described processes St1 to St3, the first die D1 held in the first carrier C1 is processed. First, the transfer device 40 removes the first carrier C1 from the FOUP Fc1 and transfers it to the transition device 60. After being transferred to the transition device 60, the transfer device 50 transfers the first carrier C1 to the die surface cleaning device 74. In the die surface cleaning device 74, the surface D1a of the first die D1 is cleaned with, for example, a cleaning liquid (St4 in FIG. 11 ).

[0078] Next, the first carrier C1 is transported by the transport device 50 to the die surface modification device 72. In the die surface modification device 72, for example, plasma processing is performed under a reduced pressure atmosphere to modify the surface D1a of the first die D1 (St5 in FIG. 11).

[0079] Next, the first carrier C1 is transported by the transport device 50 to the die surface hydrophilization device 76. In the die surface hydrophilization device 76, hydroxyl groups (silanol groups) are attached to the surface D1a of the first die D1 modified in St5 using, for example, pure water, thereby hydrophilizing the surface D1a. The surface D1a is also rinsed with the pure water (St6 in FIG. 11 ).

[0080] Next, the first carrier C1 is transported by the transport device 50 to the transition device 90, and further transported by the transport device 80 to the first joining device 100. Note that if the joining process has already been performed in the four first joining devices 100, the first carrier C1 is transported to the buffer device 91 and temporarily stored therein.

[0081] While the wafer W is subjected to the processes St1 to St3 described above and the first die D1 is subjected to the processes St4 to St6 described above, the second die D2 held in the second carrier C2 is processed. First, the transfer device 40 removes the second carrier C2 from the FOUP Fc2 and transfers it to the transition device 60. The second carrier C2 transferred to the transition device 60 is then transferred by the transfer device 50 to the die surface cleaning device 74. In the die surface cleaning device 74, the surface D2a of the second die D2 is cleaned with, for example, a cleaning liquid (St7 in FIG. 11 ).

[0082] Next, the second carrier C2 is transported by the transport device 50 to the die surface modification device 72. In the die surface modification device 72, for example, plasma processing is performed under a reduced pressure atmosphere to modify the surface D2a of the second die D2 (St8 in FIG. 11).

[0083] Next, the second carrier C2 is transported by the transport device 50 to the die surface hydrophilization device 76. In the die surface hydrophilization device 76, hydroxyl groups (silanol groups) are attached to the surface D2a of the second die D2 modified in St8 using, for example, pure water, thereby hydrophilizing the surface D2a. The surface D2a is also rinsed with the pure water (St9 in FIG. 11 ).

[0084] Next, the second carrier C2 is transported by the transport device 50 to the transition device 90, then by the transport device 80 to the transition device 120, and then by the transport device 110 to the second joining device 130. Note that if the joining process has already been performed in the four second joining devices 130, the second carrier C2 is transported to the buffer device 121 and temporarily stored therein.

[0085] The wafer W that has been subjected to the processes of St1 to St3 described above is transferred to the first bonding apparatus 100, and the first carrier C1 that has been subjected to the processes of St4 to St6 described above is transferred to the first bonding apparatus 100. In the first bonding apparatus 100, the first die D1 held by the first carrier C1 is removed from the first carrier C1 and picked up. Furthermore, as shown in FIG. 12(c), the surface D1a of the picked-up first die D1 is brought into contact with the surface Wa of the wafer W, and the first die D1 is pressed against the wafer W, thereby bonding the first die D1 to the wafer W (St10 in FIG. 11).

[0086] In St10, because the surface Wa of the wafer W and the surface D1a of the first die D1 have been modified in St2 and St5, respectively, van der Waals forces (intermolecular forces) are generated between the surfaces Wa and D1a, thereby bonding the surfaces Wa and D1a together. Furthermore, because the surface Wa of the wafer W and the surface D1a of the first die D1 have been hydrophilized in St3 and St6, respectively, the hydrophilic groups between the surfaces Wa and D1a form hydrogen bonds (intermolecular forces), thereby firmly bonding the surfaces Wa and D1a together.

[0087] As described above, the first bonding apparatus 100 is a high-precision bonding apparatus. The first die D1 includes a device layer E on which circuits and the like are formed, and high bonding precision is required. In St10, the first die D1 can be bonded to a desired position on the wafer W with high precision.

[0088] In St10, when all the first dies D1 held in the first carrier C1 are bonded to the wafers W, the first carrier C1 is transferred to the transition device 90 by the transfer device 80, transferred to the transition device 60 by the transfer device 50, and further transferred to the FOUP Fc1 by the transfer device 40. On the other hand, if the first die D1 remains in the first carrier C1 after St10, the first carrier C1 may remain in the first bonding device 100, and the first die D1 may be bonded to the subsequent wafer W. Alternatively, if the first die D1 remains in the first carrier C1 after St10, the first carrier C1 may be transferred to the buffer device 91 by the transfer device 80 and temporarily stored in the buffer device 91.

[0089] On the other hand, in St10, when the first die D1 is bonded to all of the desired positions on the wafer W, the wafer W is transferred by the transfer device 80 to the transition device 120, and then transferred by the transfer device 110 to the second bonding device 130. Note that if the bonding process has already been performed in the four second bonding devices 130, the wafer W is transferred to the buffer device 121 and temporarily stored in the buffer device 121.

[0090] The second carrier C2, which has been subjected to the processes of St7 to St9 described above, is transferred to the second bonding device 130. In the second bonding device 130, the second die D2 held by the second carrier C2 is removed from the second carrier C2 and picked up. Furthermore, as shown in FIG. 12(d), the surface D2a of the picked-up second die D2 is brought into contact with the surface Wa of the wafer W, and the second die D2 is pressed against the wafer W, thereby bonding the second die D2 to the wafer W (St11 in FIG. 11).

[0091] In St11, because the surface Wa of the wafer W and the surface D2a of the second die D2 have been modified in St2 and St8, respectively, van der Waals forces (intermolecular forces) are generated between the surfaces Wa and D2a, thereby bonding the surfaces Wa and D2a together. Furthermore, because the surface Wa of the wafer W and the surface D2a of the second die D2 have been hydrophilized in St3 and St9, respectively, the hydrophilic groups between the surfaces Wa and D2a form hydrogen bonds (intermolecular forces), thereby firmly bonding the surfaces Wa and D2a together.

[0092] As described above, the second bonding apparatus 130 is a low-precision bonding apparatus. Since the second die D2 does not have a circuit or the like formed thereon and therefore requires low bonding precision, the second die D2 is bonded to a desired position on the wafer W with low precision in St11. In this case, since low bonding precision is sufficient, the time required for St11 can be shortened.

[0093] In St11, when all the second dies D2 held in the second carrier C2 are bonded to the wafers W, the second carrier C2 is transferred to the transition device 120 by the transfer device 110, transferred to the transition device 90 by the transfer device 80, transferred to the transition device 60 by the transfer device 50, and further transferred to the FOUP Fc2 by the transfer device 40. On the other hand, if the second die D2 remains in the second carrier C2 after St11, the second carrier C2 may remain in the second bonding device 130, and the second die D2 may be bonded to the subsequent wafer W. Alternatively, if the second die D2 remains in the second carrier C2 after St11, the second carrier C2 may be transferred to the buffer device 121 by the transfer device 110 and temporarily stored in the buffer device 121.

[0094] 1, the wafer W is transferred to the transition device 120 by the transfer device 110, transferred to the transition device 90 by the transfer device 80, and transferred to the inspection device 70 by the transfer device 50. In the inspection device 70, for example, an image of the wafer W is taken and the presence or absence of voids between the surface Wa of the wafer W and the dies D1 and D2 is inspected (St12 in FIG. 11).

[0095] Next, the wafer W is transferred to the transition device 60 by the transfer device 50, and further transferred to the FOUP Fw by the transfer device 40. In this way, a series of die-on wafer manufacturing processes is completed.

[0096] The FOUPs into which the wafers W, the first carrier C1, and the second carrier C2 are recovered do not necessarily have to be the same FOUPs that housed the wafers W, the first carrier C1, and the second carrier C2, respectively, when they were loaded in. That is, for example, the FOUPs that housed the wafers W, the first carrier C1, and the second carrier C2, respectively, may each carry out different members, or new FOUPs or the like may be loaded into the processing system 1 for carrying out the wafers W, the first carrier C1, and the second carrier C2.

[0097] According to the above embodiment, the processing system 1 includes the first bonding apparatus 100, which is a high-precision bonding apparatus, and the second bonding apparatus 130, which is a low-precision bonding apparatus. The first die D1 includes a device layer E on which circuits and the like are formed, and therefore requires high bonding accuracy. The first bonding apparatus 100 can bond the first die D1 to a desired position on the wafer W with high accuracy. The second die D2 does not include circuits and therefore requires low bonding accuracy. The second bonding apparatus 130 bonds the second die D2 to a desired position on the wafer W with low accuracy. Since low bonding accuracy is sufficient, the time required for bonding the second die D2 to the wafer W can be shortened. Therefore, the throughput of the die-on-wafer manufacturing process can be improved while appropriately mounting multiple types of first dies D1 and second dies D2 on the wafer W with the required bonding accuracy.

[0098] Here, in the first bonding apparatus 100 and the second bonding apparatus 130, replacing the bond head 261 (described later) takes time, and also takes time to calibrate (correct) the bond head 261 after replacement. In this regard, in the present embodiment, the first die D1 and the second die D2, which are different sizes, are bonded to the wafer W by the separate first bonding apparatus 100 and second bonding apparatus 130, respectively, so there is no need to replace the bond head 261. This reduces the time required to replace the bond head, further improving the throughput of the die-on-wafer manufacturing process.

[0099] In this embodiment, the second bonding device 130 is a low-precision bonding device, and as described below, the device configuration can be reduced to lower precision specifications compared to a high-precision bonding device. As a result, the device cost of the second bonding device 130 can be reduced, and the device cost of the processing system 1 can be reduced.

[0100] Next, the configurations of the above-described first welding apparatus 100 and second welding apparatus 130 will be described. The first welding apparatus 100 and the second welding apparatus 130 require different welding precision, so first the configuration of the first welding apparatus 100 will be described, and then the configuration of the second welding apparatus 130 will be described, focusing on the differences from the first welding apparatus 100. Figure 13 is a perspective view showing an outline of the configuration of the first welding apparatus 100.

[0101] 13, the first bonding apparatus 100 has a stage 200. The stage 200 is divided into a de-bonding area 201 and a bonding area 202. The de-bonding area 201 and the bonding area 202 are arranged side by side in the horizontal direction (positive direction of the X-axis). In the de-bonding area 201, the first die D1 held by the first carrier C1 is de-bonded from the first carrier C1 and picked up. In the bonding area 202, the first die D1 picked up in the de-bonding area 201 is bonded to a wafer W.

[0102] A carrier holding unit 210 is provided in the separation area 201. The carrier holding unit 210 has a holding surface of the first carrier C1 on its upper surface, and holds the first carrier C1 holding the first die D1 in a state where the surface D1a of the first die D1 faces upward.

[0103] A moving mechanism 211 is provided below the carrier holding unit 210. The carrier holding unit 210 is configured to be movable in the horizontal direction (X-axis direction and Y-axis direction) by the moving mechanism 211. The driving unit of the moving mechanism 211 is not particularly limited, but a linear motor, for example, is used.

[0104] 14 , the carrier holding part 210 is provided with an air supply part 220. The air supply part 220 has an air cap 221 and an air supply source 222. The air cap 221 is provided inside the carrier holding part 210 and supplies air to the through-hole H1 of the first carrier C1 held by the carrier holding part 210. The air supply source 222 stores air therein and supplies air to the air cap 221.

[0105] The air supply unit 220 supplies air from the air cap 221 to the back surface D1b of the first die D1 on the first carrier C1 through the through hole H1. This applies air pressure to the first die D1, thereby reducing the adhesion between the first die D1 and the insulating layer N1 on the suction surface of the first carrier C1. Specifically, as shown in FIG. 15 , when air is supplied to the back surface D1b of the first die D1, the insulating layer N1 expands, with the central portion of the through hole H1 formed in the main body M1 directly below the first die D1 as its apex. This causes the first die D1 to lift up from the insulating layer N1 at the outer periphery of the first die D1 corresponding to the peripheral portion of the through hole H1, while maintaining adhesion between the first die D1 and the insulating layer N1 at the center of the first die D1 corresponding to the central portion of the through hole H1. This reduces the adhesive force between the first die D1 and the insulating layer N1, allowing the first die D1 to be released from the chucking surface of the first carrier C1.

[0106] 13 , a collet 230 is provided above the carrier holding unit 210. The collet 230 picks up and transports the first die D1 from the first carrier C1. Specifically, the collet 230 holds the first die D1 whose outer periphery has been lifted due to a decrease in adhesion between the first die D1 and the insulating layer N1 caused by the supply of air from the air supply unit 220, and detaches the first die D1 from the first carrier C1. The collet 230 then transports the held first die D1 from the detachment region 201 to the bonding region 202.

[0107] The method for holding the first die D1 by the collet 230 is arbitrary. However, since the surface D1a of the first die D1 held by the collet 230 is the device surface of the device layer E, the collet 230 must hold the first die D1 without damaging the device surface. For example, the collet 230 may be a non-contact chuck that can hold the first die D1 from above without contact using the Bernoulli effect or the ultrasonic squeeze effect. Alternatively, instead of holding the surface D1a of the first die D1, the collet 230 may be configured to clamp and hold the side surface of the first die D1 that has been raised by, for example, supplying air.

[0108] The collet 230 is supported by a moving mechanism 231. The moving mechanism 231 supports and moves the collet 230. The moving mechanism 231 has an arm 232, a rail 233, a support member 234, and a drive unit 235. The tip end of the arm 232 supports the collet 230, and the base end is attached to the rail 233. The rail 233 extends in the X-axis direction and is supported by the support member 234. The drive unit 235 moves the arm 232 and the collet 230 in the X-axis direction along the rail 233. The drive unit 235 also moves the arm 232 and the collet 230 in the Y-axis direction. Furthermore, the drive unit 235 rotates the collet 230 supported by the arm 232 around a horizontal axis (around the X-axis), and the collet 230 can flip the front and back surfaces of the first die D1 it holds. The drive source of the drive unit 235 is not particularly limited, but may be, for example, a linear motor.

[0109] A first imaging unit 240 is provided above the carrier holding unit 210. For example, a camera is used as the first imaging unit 240. The first imaging unit 240 images at least two points on the first die D1 on the first carrier C1 held by the carrier holding unit 210 from above. The first imaging unit 240 is fixed, and images the two points on the first die D1 by moving the carrier holding unit 210. The captured images are output to the control device 140, which measures the position of the first die D1 on the first carrier C1. The control device 140 controls the moving mechanism 231 based on the measured position of the first die D1, and adjusts the position of the collet 230 so that the collet 230 appropriately picks up the first die D1.

[0110] A second imaging unit 241 is provided on the positive X-axis side of the carrier holding unit 210, below the collet 230. The second imaging unit 241 may be, for example, a camera. The second imaging unit 241 captures images of at least two points on the first die D1 held by the collet 230 from below. The second imaging unit 241 is fixed, and the collet 230 is moved to capture images of the two points on the first die D1. The captured images are output to the control device 140, which measures the position of the first die D1 held by the collet 230. The control device 140 controls the moving mechanism 231 based on the measured position of the first die D1, and adjusts the position of the collet 230 so that the collet 230 can transfer the first die D1 to an appropriate position on a bond head 261 (described later).

[0111] A wafer holding part 250 serving as a substrate holding part is provided in the bonding region 202. The wafer holding part 250 has a holding surface for the wafer W on its upper surface, and holds the wafer W with the front surface Wa, which is the mounting surface of the first die D1, facing upward. The wafer holding part 250 is supported by a support plate 251.

[0112] A moving mechanism 252 is provided below the support plate 251. The moving mechanism 252 is configured to move the wafer holder 250 and the support plate 251 in horizontal directions (X-axis direction and Y-axis direction). The driving unit of the moving mechanism 252 is not particularly limited, but a linear motor, for example, is used.

[0113] A head unit 260 is provided above the wafer holding unit 250. The head unit 260 receives and holds the first die D1 from the collet 230, transports the held first die D1 to the wafer W, and bonds the first die D1 to the wafer W. As shown in FIG. 16 , the head unit 260 has a bond head 261, a glass plate 262, and a base 263.

[0114] The bond head 261 receives from above and holds the first die D1 held by the collet 230. The holding surface (lower surface) of the bond head 261 for the first die D1 has a convex shape with the center portion protruding downward.

[0115] The bond head 261 may hold the first die D1 in any manner. Because the back surface D1b of the first die D1 held by the bond head 261 is the silicon layer S1, the bond head 261 does not necessarily need to be configured as a non-contact chuck or the like, like the collet 230. For example, a vacuum chuck may be used for the bond head 261, and the bond head 261 may suction-hold the first die D1 by vacuuming it using a vacuum mechanism (not shown).

[0116] The glass plate 262 is larger than the bond head 261 and holds the entire upper surface of the bond head 261. The method of holding the bond head 261 by the glass plate 262 is arbitrary. For example, the glass plate 262 may hold the bond head 261 by suction using a vacuum mechanism (not shown). In such a case, the bond head 261 is configured to be detachable from the glass plate 262 and to be replaceable.

[0117] The base 263 supports the outer periphery of the upper surface of the glass plate 262. The base 263 has an annular shape, and an opening 263a is formed in the center of the base 263. The opening 263a is formed to be at least larger than the bond head 261, that is, the bond head 261 held by the glass plate 262 is disposed inside the opening 263a in a plan view.

[0118] A plurality of, for example, four alignment marks 264 are provided on the lower surface of the glass plate 262. The four alignment marks 264 are arranged outside the bond head 261 held by the glass plate 262 and inside the opening 263 a in plan view.

[0119] As shown in Figure 13, a third imaging unit 280 (described later) is provided below the head unit 260, and a fourth imaging unit 281 (described later) and a fifth imaging unit 282 (described later) are provided above the head unit 260. These imaging units 280, 281, and 282 move slightly over time, so they need to be aligned at the desired timing. This alignment is performed by the imaging units 280, 281, and 282 capturing images of the four alignment marks 264. For this reason, the glass plate 262 is made transparent.

[0120] Furthermore, a fourth imaging unit 281 and a fifth imaging unit 282, which will be described later, each capture an image of the wafer W held by the wafer holding unit 250 below the head unit 260. The fourth imaging unit 281 and the fifth imaging unit 282 each capture an image of the wafer W through the glass plate 262, outside the bond head 261 and inside the opening 263 a in a plan view. For this reason, the glass plate 262 is configured to be transparent.

[0121] The head unit 260 is supported by a moving mechanism 270. The moving mechanism 270 supports and moves the head unit 260. The moving mechanism 270 has an arm 271, a rail 272, a support member 273, and a drive unit 274. The tip end of the arm 271 supports the base 263 of the head unit 260, and the base end is attached to the rail 272. The rail 272 extends in the X-axis direction and is supported by the support member 273. The drive unit 274 moves the arm 271 and the head unit 260 in the X-axis direction along the rail 272. The drive unit 274 also moves the arm 271 and the head unit 260 in the Y-axis direction. The drive source of the drive unit 274 is not particularly limited, but a linear motor, for example, is used.

[0122] A third imaging unit 280 is provided below the head unit 260. For example, a camera is used as the third imaging unit 280. The third imaging unit 280 images at least two points on the first die D1 held by the bond head 261 from below while the wafer holding unit 250 is retracted to a position where it does not overlap the third imaging unit 280 in a plan view. The third imaging unit 280 is fixed, and images the two points on the first die D1 by moving the bond head 261. The captured images are output to the control device 140, and the position of the first die D1 held by the bond head 261 is measured in the control device 140.

[0123] A fourth imaging unit 281 is provided above the head unit 260, specifically above the opening 263a of the base 263. For example, a camera is used as the fourth imaging unit 281. The fourth imaging unit 281 images at least two points on the wafer W held by the wafer holding unit 250 from above. At least one of the fourth imaging unit 281 and the wafer holding unit 250 is moved to image the two points on the wafer W. The captured images are output to the control device 140, and the position of the wafer W held by the control device 140 is measured.

[0124] The control device 140 adjusts the position of the first die D1 relative to the wafer W based on the position of the first die D1 measured using the third imaging unit 280 and the position of the wafer W measured using the fourth imaging unit 281. Specifically, the control device 140 controls at least one of the moving mechanism 252 and the moving mechanism 270 to move at least one of the first die D1 and the wafer W, thereby adjusting the position of the first die D1 relative to the wafer W so that the first die D1 is bonded to an appropriate position relative to the wafer W.

[0125] A fifth imaging unit 282 is provided above the head unit 260, specifically above the opening 263a of the base 263. The fifth imaging unit 282 is, for example, an IR camera. The fifth imaging unit 282 captures an image of the first die D1 mounted on the wafer W from above. The captured image is output to the control device 140, and the position of the first die D1 relative to the wafer W is measured in the control device 140. That is, the control device 140 inspects the bonding accuracy of the first die D1 relative to the wafer W.

[0126] The fourth imaging unit 281 and the fifth imaging unit 282 may each be supported by an arm 271 of the moving mechanism 270 via a support member (not shown), and may be configured to be movable in the horizontal direction (X-axis direction and Y-axis direction) by the moving mechanism 270. Alternatively, the fourth imaging unit 281 and the fifth imaging unit 282 may each be supported by a moving mechanism (not shown) separate from the moving mechanism 270, and may be configured to be movable in the horizontal direction (X-axis direction and Y-axis direction) by the moving mechanism.

[0127] Next, a method for bonding the first die D1 to the wafer W using the first bonding apparatus 100 configured as above will be described.

[0128] 17 , a wafer W and a first carrier C1 holding a plurality of first dies D1 are transported to the first bonding apparatus 100. The wafer W is held by the wafer holding part 250 with its front surface Wa facing upward. At this time, the wafer holding part 250 is disposed in a position that does not overlap with the third imaging part 280 in a plan view, that is, on the positive X-axis side of the third imaging part 280 in the illustrated example. The first carrier C1 is held by the carrier holding part 210 with the front surface D1a of the first die D1 facing upward.

[0129] Next, the first imaging unit 240 captures images of at least two points on one of the first dies D1 to be joined, among the first dies D1 on the first carrier C1 held by the carrier holding unit 210. The captured images are output to the control device 140, which measures the position of the first die D1 on the first carrier C1. The control device 140 controls the moving mechanism 231 based on the measured position of the first die D1, moves the carrier holding unit 210, and adjusts the position of the collet 230 and the first die D1 to be picked up by the collet 230.

[0130] Next, the air supply unit 220 selectively supplies air to the through hole H1 corresponding to one of the first dies D1 to be joined, causing the insulating layer N1 to expand, thereby pushing up the one of the first dies D1 from below and lifting it up.

[0131] 18, the collet 230 is lowered to hold the surface D1a of one of the first dies D1 that has been lifted up. The collet 230 may hold the first die D1 before or at the same time as the first die D1 is lifted up by air. The collet 230 is then raised to pick up the first die D1 from the first carrier C1.

[0132] 19 , the collet 230 is moved in the positive direction of the X-axis until it is above the second imaging unit 241. The second imaging unit 241 captures images of at least two points of the first die D1 held by the collet 230 from below. The captured images are output to the control device 140, which measures the position of the first die D1 held by the collet 230. The control device 140 controls the moving mechanism 231 based on the measured position of the first die D1, and adjusts the position of the collet 230 so that the first die D1 is delivered to the center of the bond head 261.

[0133] Next, the collet 230 is rotated around the horizontal axis (around the X axis), thereby inverting the front and back surfaces of the first die D1, so that the back surface D1b of the first die D1 held by the collet 230 faces upward.

[0134] Next, the collet 230 is further moved in the positive direction of the X-axis until it is below the bond head 261. Subsequently, the first die D1 is transferred from the collet 230 to the bond head 261. The first die D1 is placed in the center of the bond head 261.

[0135] 20 , the third imaging unit 280 captures images of at least two points from below on the first die D1 held by the bond head 261. The captured images are output to the control device 140, which then measures the position of the first die D1 held by the bond head 261.

[0136] 21 , the wafer holding unit 250 is moved below the bond head 261 (fourth imaging unit 281). Subsequently, the fourth imaging unit 281 captures images of at least two points on the wafer W held by the wafer holding unit 250 from above. The captured images are output to the control device 140, which measures the position of the wafer W held by the wafer W. Based on the position of the first die D1 measured using the third imaging unit 280 and the position of the wafer W measured using the fourth imaging unit 281, the control device 140 adjusts the position of the first die D1 relative to the wafer W so that the first die D1 is bonded to an appropriate position relative to the wafer W.

[0137] 22, the bond head 261 is lowered, the surface D1a of the first die D1 held by the bond head 261 is brought into contact with the surface Wa of the wafer W, and the first die D1 is pressed to bond the first die D1 to the wafer W. Subsequently, the bond head 261 is raised.

[0138] As described above, the holding surface (lower surface) of the bond head 261 for holding the first die D1 has a convex shape with a central portion protruding downward. For example, if the first die D1 is held off-center on the bond head 261, pressing the first die D1 against the wafer W will result in poor surface pressure accuracy of the first die D1 relative to the wafer W, resulting in voids being generated between the wafer W and the first die D1. In this regard, in this embodiment, the position of the collet 230 is adjusted based on an image of the first die D1 captured by the second imaging unit 241, so that the first die D1 is appropriately held at the center of the bond head 261. Therefore, when bonding the first die D1 to the wafer W, the surface pressure accuracy of the first die D1 relative to the wafer W can be improved, and the generation of voids can be suppressed.

[0139] In this manner, the bonding operation of the first die D1 to the wafer W is performed. The bonding operation of the first die D1 is performed independently and continuously for each of the plurality of first dies D1 held by suction on the first carrier C1.

[0140] Once the first die D1 has been bonded to all of the desired positions on the wafer W, the fifth imaging unit 282 then captures an image of the first die D1 mounted on the wafer W from above. The captured image is output to the control device 140, which measures the position of the first die D1 relative to the wafer W and inspects the bonding accuracy of the first die D1 relative to the wafer W. In this way, a series of bonding processes in the first bonding apparatus 100 is completed.

[0141] According to the above embodiment, various position adjustments (alignments) are performed in the first bonding apparatus 100. That is, the first imaging unit 240 is used to adjust the position of the collet 230 and the first die D1 picked up by the collet 230. The second imaging unit 241 is used to adjust the position of the collet 230 so that the first die D1 is delivered to the center of the bond head 261. The third imaging unit 280 and the fourth imaging unit 281 are used to adjust the position of the first die D1 relative to the wafer W. This allows the first die D1 to be bonded to an appropriate position relative to the wafer W. Furthermore, it is also possible to suppress voids when bonding the first die D1 to the wafer W. Therefore, the first bonding apparatus 100 can bond the first die D1 to the wafer W with high bonding accuracy.

[0142] Furthermore, in the first bonding apparatus 100, by increasing the rigidity of the moving mechanism 211, the arm 232 of the moving mechanism 231, the moving mechanism 252, and the arm 271 of the moving mechanism 270, it is possible to improve the accuracy of the movement of the carrier holding part 210, the movement of the collet 230, the movement of the wafer holding part 250, and the movement of the head part 260. In this case, it is possible to improve the accuracy of bonding the first die D1 to the wafer W in the first bonding apparatus 100.

[0143] Furthermore, in the first bonding apparatus 100, by improving the performance of each of the drive unit of the moving mechanism 211, the drive unit 235 of the moving mechanism 231, the drive unit of the moving mechanism 252, and the drive unit 274 of the moving mechanism 231, it is possible to speed up the movement of the carrier holding unit 210, the movement of the collet 230, the movement of the wafer holding unit 250, and the movement of the head unit 260. As a result, it is possible to shorten the time required for the bonding process in the first bonding apparatus 100.

[0144] Next, the configuration of the second joining device 130 will be described, focusing on the differences from the first joining device 100. The second joining device 130 is a low-precision joining device, and compared to the first joining device 100, the device configuration can be kept to lower precision specifications.

[0145] For example, the second bonding apparatus 130 can omit at least one of the first imaging unit 240, the third imaging unit 280, and the fourth imaging unit 281 because low positional accuracy of the second die D2 relative to the wafer W is required. Also, the second imaging unit 241 can be omitted if it is not necessary to suppress voids when bonding the second die D2 to the wafer W. Furthermore, the fifth imaging unit 282 can be omitted because low bonding accuracy of the second die D2 relative to the wafer W is required and inspection is not required.

[0146] Furthermore, in the second bonding apparatus 130, by improving the performance of each of the drive unit of the moving mechanism 211, the drive unit 235 of the moving mechanism 231, the drive unit of the moving mechanism 252, and the drive unit 274 of the moving mechanism 270, it is possible to increase the speed of movement of the carrier holding unit 210, the movement of the collet 230, the movement of the wafer holding unit 250, and the movement of the head unit 260. On the other hand, since improving the performance of each drive unit in this way results in the drive unit becoming larger, it is preferable to reduce the rigidity of, for example, the moving mechanism 211, the rigidity of the arm 232 of the moving mechanism 231, the rigidity of the moving mechanism 252, and the rigidity of the arm 271 of the moving mechanism 270. In this regard, since the bonding precision required for the second bonding apparatus 130 is low, it is possible to reduce these rigidities.

[0147] As described above, the second bonding apparatus 130 can have a lower-precision device configuration and can also have lower-precision bonding conditions than the first bonding apparatus 100. This reduces the time required for bonding processing in the second bonding apparatus 130. Note that the second bonding apparatus 130 can have the same device configuration as the first bonding apparatus 100, and only the bonding conditions can be set to lower-precision specifications.

[0148] The bonding conditions are conditions for bonding the first die D1 and the second die D2 to the wafer W, and are equipment parameters. The equipment parameters include, for example, the acceleration / deceleration and speed of the movement of the carrier holding unit 210, the collet 230, the wafer holding unit 250, and the head unit 260 by the movement mechanisms 211, 231, 252, and 270, and the waiting time until the drive of the drive units of these movement mechanisms 211, 231, 252, and 270 stabilizes. The equipment parameters also include whether or not to capture images by the image capturing units 240, 241, 280, 281, and 282, and the image capturing time.

[0149] In the first welding device 100 and the second welding device 130 of the above embodiment, the release region 201 and the welding region 202 are arranged side by side in the horizontal direction (positive direction of the X-axis), but they may be arranged stacked in the vertical direction, for example. In this case, the footprints (occupied areas) of the first welding device 100 and the second welding device 130 can be kept small.

[0150] In the above embodiment, the first carrier C1 holds a plurality of first dies D1, and the second carrier C2 holds a plurality of second dies D2, but one carrier may hold a plurality of first dies D1 and a plurality of second dies D2. Alternatively, as will be described later, one carrier may hold three or more types of dies, and the pattern of dies held by one carrier is arbitrary.

[0151] In the above embodiment, the case where the first die D1 and the second die D2 are mounted on the wafer W has been described. However, three or more types of dies may be mounted on the wafer W. For example, as shown in FIG. 23 , in addition to the first die D1 and the second die D2, a third die D3 may be mounted on the wafer W. In such a case, the processing system 1 may be provided with a dedicated bonding device (not shown) for bonding the third die D3 to the wafer W. Alternatively, for example, if the third die D3 is a low-precision die, the second die D2 and the third die D3 may be bonded to the wafer W by replacing the bond head 261 in the second bonding device 130.

[0152] Furthermore, in the processing system 1 of the above embodiment, the configuration of the multiple types of bonding apparatuses is arbitrary. For example, the processing system 1 may have multiple bonding apparatuses that bond a single type of die to a wafer W, or multiple bonding apparatuses that can bond multiple types of die to a wafer W. Alternatively, as shown in FIG. 24 , the processing system 1 may have a third bonding apparatus 150 in addition to the first bonding apparatus 100 and the second bonding apparatus 130. The third bonding apparatus 150 is configured to accommodate, for example, two wafers W and bonds dies to the two wafers W. In such a case, the throughput of the die-on-wafer manufacturing process can be improved.

[0153] As described above, the bonding apparatus of other embodiments may be configured to be able to bond multiple types of dies D (a collective term for multiple types of dies D1 and D2) to the wafer W, and in such cases, it is necessary to replace the bond head 261. The configuration of the bonding apparatus 300 and a method for replacing the bond head 261 will be described below.

[0154] 25 , bonding apparatus 300 includes the same components as first bonding apparatus 100 described above, but also includes a plurality of, for example, three, bond head mounting stages 310. The plurality of bond head mounting stages 310 are arranged on support plate 251 on the positive X-axis side of wafer holding unit 250. That is, the plurality of bond head mounting stages 310 are configured to be movable integrally with wafer holding unit 250 by movement mechanism 252. The height of the upper surface (mounting surface) of bond head mounting stage 310 is the same as the height of the upper surface (holding surface) of wafer holding unit 250. The number of bond head mounting stages 310 is arbitrary, and may be, for example, two or four or more.

[0155] The bond head mounting tables 310 are configured to be able to mount the bond heads 261. In this embodiment, for example, replacement bond heads 261 are mounted on two bond head mounting tables 310, and one bond head mounting table 310 is empty and does not have a bond head 261 mounted thereon.

[0156] A description will be given of the case where the bond head 261A is replaced with the bond head 261B in the bonding apparatus 300. First, an empty bond head mounting table 310 is moved below the bond head 261A held on the glass plate 262 as shown in FIG.

[0157] Next, the bond head 261A is lowered and placed on the bond head mounting table 310. Subsequently, the vacuum pumping of the bond head 261A is stopped, and the bond head 261A is transferred to the bond head mounting table 310. That is, the bond head 261A is not held by the glass plate 262, as shown in FIG. 26(b).

[0158] Next, the bond head mounting table 310 on which the bond head 261B is placed is moved below the glass plate 262. Subsequently, as shown in Figure 26(c), the bond head 261B is vacuumed and held by suction to the glass plate 262. Thereafter, the bond head 261B is raised, completing the replacement of the bond head 261A with the bond head 261B.

[0159] 26(c), when the bond head 261A is replaced with the bond head 261B, the bond head 261B may be held at a position that is shifted from the desired position relative to the glass plate 262. If the die D is held by the bond head 261B in this state, the die D may be held at a position that is shifted from the center of the bond head 261B. In such a case, when the die D is bonded to the wafer W, a void occurs between the wafer W and the die D.

[0160] Therefore, in the past, after the die D was held by the bond head 261B, the third imaging unit 280 captured an image of the die D, and the control device 140 measured the amount of positional deviation of the die D relative to the bond head 261B. Then, based on the measured amount of positional deviation, when the second or subsequent die D is transferred from the collet 230 to the bond head 261B, the position of the die D is corrected so that the die D is held in the center of the bond head 261B.

[0161] However, when the position of the die D relative to the bond head 261B is corrected using the conventional method, it is possible to correct the position of the second and subsequent dies D, but not the first die D. Furthermore, in order to measure the amount of misalignment of the die D relative to the bond head 261B using the third imaging unit 280, there is a restriction that the bond head 261B must be larger than the die D.

[0162] 26(c), bond head 261A is replaced with bond head 261B, and after bond head 261B is held by glass plate 262 under vacuum, third imaging unit 280 captures an image of bond head 261B and at least two alignment marks 264. The captured image is output to control device 140, which measures the position of bond head 261B (e.g., the edge of bond head 261B) relative to alignment mark 264. That is, control device 140 measures the amount of positional deviation of bond head 261B from the desired position of bond head 261 relative to alignment mark 264.

[0163] Next, based on the measured amount of positional misalignment of bond head 261B, control device 140 calculates the position of die D relative to alignment mark 264 so that die D will be held in the center of bond head 261B. Then, when transferring die D from collet 230 to bond head 261B, control device 140 corrects the position of collet 230 relative to bond head 261B, thereby correcting the position of die D relative to bond head 261B as shown in FIG. 26( d). As a result, die D is held in the center of bond head 261B.

[0164] According to this embodiment, the third imaging unit 280 images the alignment mark 264 and the bond head 261B, and therefore there is no restriction that the bond head 261B must be larger than the die D, as in the conventional method. Furthermore, after replacing the bond head 261B, the position of the collet 230 relative to the bond head 261B is corrected, so that the first die D can be held in the center of the bond head 261B. As a result, even when bonding the first die D to the wafer W, the occurrence of voids can be suppressed, and bonding accuracy can be improved.

[0165] In the above embodiment, the dies D1 and D2 held by the carriers C1 and C2 are mounted on the wafer W, but the carriers that hold the dies D1 and D2 before mounting are not limited to the carriers C1 and C2 of the above embodiment. For example, the dies D1 and D2 may be attached to a dicing tape fixed to a dicing frame. The silicon layers S1 and S2 on the backsides D1b and D2b of the dies D1 and D2 are attached to the dicing tape.

[0166] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive. The above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. For example, the components of the above-described embodiments may be arbitrarily combined. Such an arbitrary combination naturally provides the functions and effects of each of the components involved in the combination, and also provides other functions and effects that are apparent to those skilled in the art from the description of this specification.

[0167] Furthermore, the effects described herein are merely descriptive or exemplary and are not limiting. In other words, the technology according to the present disclosure may achieve other effects that are apparent to those skilled in the art from the description of this specification, in addition to or in place of the above-described effects.

[0168] 1 Processing system 100 First bonding apparatus 130 Second bonding apparatus C1 First carrier C2 Second carrier D1 First die D2 Second die W Wafer

Claims

1. A processing system for mounting a plurality of types of dies on a target substrate, the processing system having a plurality of types of bonding devices for bonding the dies held by a carrier to the target substrate, wherein the plurality of types of bonding devices have different bonding accuracies of the dies with respect to the target substrate.

2. Among the plurality of types of bonding devices, the bonding device with relatively high bonding accuracy and the bonding device with relatively low bonding accuracy differ in at least one of the specifications of the die moving mechanism and the specifications of the die position adjusting mechanism. The processing system according to claim 1.

3. The bonding device includes a carrier holding portion for holding the carrier, a substrate holding portion for holding the target substrate, a collet for picking up and transporting the die from the carrier, and a head for receiving the die from the collet and transporting the die to the target substrate. The moving mechanism includes the collet and the head. The processing system according to claim 2.

4. The bonding device includes a carrier holding portion for holding the carrier, a substrate holding portion for holding the target substrate, a collet for picking up and transporting the die from the carrier, and a head for receiving the die from the collet and transporting the die to the target substrate. The position adjusting mechanism adjusts the relative position between the die held by the head and the target substrate held by the substrate holding portion. The processing system according to claim 2.

5. Among the plurality of types of bonding devices, the bonding device with relatively high bonding accuracy and the bonding device with relatively low bonding accuracy have different bonding conditions when bonding the die to the target substrate. The processing system according to claim 1.

6. Among the plurality of types of bonding devices, a circuit is formed on the die bonded by the bonding device with relatively high bonding accuracy, and a circuit is not formed on the die bonded by the bonding device with relatively low bonding accuracy. The processing system according to claim 1.

7. Among the plurality of types of bonding devices, the die bonded by the bonding device with relatively high bonding accuracy and the die bonded by the bonding device with relatively low bonding accuracy have different shapes. The processing system according to claim 1.

8. The carrier has a main body portion in which a plurality of through holes are formed in the thickness direction. The processing system according to claim 1.

9. A processing system according to claim 1, comprising: a die surface cleaning device for cleaning the surface of the die held by the carrier; a die surface modification device for modifying the surface of the die held by the carrier; a die surface hydrophilic treatment device for hydrophilizing the surface of the die held by the carrier; a substrate surface cleaning device for cleaning the surface of the target substrate; a substrate surface modification device for modifying the surface of the target substrate; and a substrate surface hydrophilic treatment device for hydrophilizing the surface of the target substrate.

10. A processing method for mounting a plurality of types of dies on a target substrate, comprising joining the dies held by a carrier to the target substrate using a plurality of types of bonding devices, wherein the bonding accuracy of the dies with respect to the target substrate is different among the plurality of types of bonding devices.

11. The processing method according to claim 10, wherein at least one of the specifications of the die transfer mechanism and the die position adjustment mechanism is different between the bonding device with relatively high bonding accuracy and the bonding device with relatively low bonding accuracy among the plurality of types of bonding devices.

12. The processing method according to claim 10, wherein the bonding conditions are different when joining the dies to the target substrate between the bonding device with relatively high bonding accuracy and the bonding device with relatively low bonding accuracy among the plurality of types of bonding devices.

13. The processing method according to claim 10, wherein a circuit is formed on the die bonded by the bonding device with relatively high bonding accuracy among the plurality of types of bonding devices, and no circuit is formed on the die bonded by the bonding device with relatively low bonding accuracy among the plurality of types of bonding devices.

14. The processing method according to claim 10, wherein the die bonded by the bonding device with relatively high bonding accuracy and the die bonded by the bonding device with relatively low bonding accuracy among the plurality of types of bonding devices have different shapes.

15. The processing method according to claim 10, wherein the carrier has a main body portion in which a plurality of through holes are formed in the thickness direction, and air is supplied to the die through the through holes when picking up the die from the carrier in the bonding device.

16. Cleaning the surface of the die held by the carrier using a die surface cleaning device; modifying the surface of the die held by the carrier using a die surface modification device; hydrophilizing the surface of the die held by the carrier using a die surface hydrophilization device; cleaning the surface of the target substrate using a substrate surface cleaning device; modifying the surface of the target substrate using a substrate surface modification device; and hydrophilizing the surface of the target substrate using a substrate surface hydrophilization device, the processing method according to claim 10.

Images