Substrate processing method and substrate processing device

Abstract

The present invention relates to a substrate processing method and a substrate processing device 1. The substrate processing method is for processing a substrate W. The substrate W includes a first layer E, a second layer F, a third layer G, and a recess A. The substrate processing method includes a processing liquid supply step and a vibration step. In the processing liquid supply step, a processing liquid R is supplied to the substrate W supported by a substrate support part 12. In the vibration step, vibration is applied to the substrate W via the substrate support part 12. In a processing liquid supply period P in which the processing liquid supply step is executed, the processing liquid R enters the recess A. At least a part of a vibration period Q in which the vibration step is executed overlaps at least a part of the processing liquid supply period P. The vibration step includes a first vibration step and a second vibration step. In the first vibration step, vibration of a natural frequency JE of the first layer E is applied to the substrate W. In the second vibration step, vibration of a natural frequency JF of the second layer F is applied to the substrate W.

Description

Substrate processing method and substrate processing apparatus

[0001] The present invention relates to a substrate processing method and a substrate processing apparatus, for example, a semiconductor wafer, a liquid crystal display substrate, an organic electroluminescence (EL) substrate, an FPD (Flat Panel Display) substrate, an optical display substrate, a magnetic disk substrate, an optical disk substrate, a magneto-optical disk substrate, a photomask substrate, or a solar cell substrate.

[0002] Patent Document 1 discloses a substrate processing method for processing a substrate. For example, the substrate processing method is for cleaning the substrate. In the substrate processing method, the substrate is supported on a substrate support, and the substrate support is vibrated by a vibrator. This improves the efficiency of removing particles from the substrate.

[0003] Alternatively, the substrate processing method is for etching a substrate, in which the substrate is supported by a substrate support portion and the substrate support portion is vibrated by an oscillator, thereby improving the etching rate of the substrate.

[0004] Japanese Patent Application Publication No. 7-161639

[0005] Even with conventional substrate processing methods, it can be difficult to properly process a substrate.

[0006] For example, a substrate may include a recess. Even with conventional substrate processing methods, it may be difficult to properly process the recess. Even with conventional substrate processing methods, it may be difficult to properly clean the recess. Even with conventional substrate processing methods, it may be difficult to properly etch the recess.

[0007] The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a substrate processing method and a substrate processing apparatus that appropriately processes a substrate.

[0008] In order to achieve the above object, the present invention has the following configuration. That is, the present invention is a substrate processing method for processing a substrate, wherein the substrate includes a first layer, a second layer, a third layer, and a recess, the second layer being located between the first layer and the third layer, the recess being formed by the second layer being recessed relative to the first layer and the third layer, the composition of the second layer being different from that of the first layer, and the composition of the second layer being different from that of the third layer, the substrate processing method comprising: a processing liquid supplying step of supplying a processing liquid to the substrate supported by a substrate support part; and a vibration step of applying vibrations to the substrate via the substrate support part, wherein during a processing liquid supply period in which the processing liquid supplying step is performed, the processing liquid enters the recess, at least a portion of the vibration period in which the vibration step is performed overlaps with at least a portion of the processing liquid supply period, and the vibration step includes a first vibration step of applying vibrations of the natural frequency of the first layer to the substrate, and a second vibration step of applying vibrations of the natural frequency of the second layer to the substrate.

[0009] The substrate processing method is for processing a substrate. The substrate includes a first layer, a second layer, a third layer, and a recess. The second layer is located between the first layer and the third layer. The recess is formed by the second layer being recessed relative to the first layer and the third layer. The second layer has a composition different from that of the first layer. The composition of the second layer is also different from that of the third layer.

[0010] The substrate processing method includes a processing liquid supplying step and a vibration step. In the processing liquid supplying step, a processing liquid is supplied to a substrate supported by a substrate support. In the vibration step, vibration is applied to the substrate via the substrate support. The vibration is transmitted from the substrate support to the substrate.

[0011] The processing liquid supply period is a period during which the processing liquid supply step is performed. During the processing liquid supply period, the processing liquid is present in the recess.

[0012] The vibration period is a period during which the vibration process is performed. At least a portion of the vibration period overlaps with at least a portion of the processing liquid supply period. Therefore, when the processing liquid is in the recess, the vibration is transmitted from the substrate support to the substrate. Then, the vibration is transmitted from the substrate to the processing liquid in the recess. Specifically, the vibration is transmitted from the first layer, the second layer, and the third layer to the processing liquid in the recess. Therefore, it is easy to vibrate the processing liquid in the recess. Therefore, it is easy for the processing liquid to enter and exit the recess. For example, it is easy for the processing liquid to move back and forth between the recess and the external space of the recess. For example, it is easy for the processing liquid to flow from the recess to the external space. For example, it is easy for the processing liquid to flow from the external space to the recess. For example, it is difficult for the processing liquid to stagnate in the recess. For example, it is easy to replace the processing liquid in the recess with the processing liquid in the external space.

[0013] The vibration step includes a first vibration step. The vibration in the first vibration step has the natural frequency of the first layer. In the first vibration step, vibration of the natural frequency of the first layer is applied to the substrate. Therefore, in the first vibration step, it is easy to vibrate the first layer to a large extent. Therefore, in the first vibration step, it is even easier to vibrate the processing liquid in the recess. Therefore, in the first vibration step, it is even easier for the processing liquid to enter and exit the recess.

[0014] The vibration step includes a second vibration step. The vibration in the second vibration step has the natural frequency of the second layer. In the second vibration step, vibration of the natural frequency of the second layer is applied to the substrate. Therefore, in the second vibration step, it is easy to vibrate the second layer to a large extent. Therefore, in the second vibration step, it is even easier to vibrate the processing liquid in the recess. Therefore, in the second vibration step, it is even easier for the processing liquid to enter and exit the recess.

[0015] In summary, according to this substrate processing method, the processing liquid can be easily introduced into and removed from the recess, and therefore the substrate can be processed appropriately according to this substrate processing method.

[0016] In the present substrate processing method, it is preferable that during the processing liquid supply period, at least a portion of the first layer contacts the processing liquid and at least a portion of the second layer contacts the processing liquid. Therefore, during at least a portion of the vibration period, the first layer directly transmits vibrations to the processing liquid, and the second layer directly transmits vibrations to the processing liquid. Therefore, during at least a portion of the vibration period, it is easier to vibrate the processing liquid in the recess.

[0017] In this substrate processing method, it is preferable that the start of the vibration period is later than the start of the processing liquid supply period. At the start of the processing liquid supply period, the processing liquid enters the recess. The start of the vibration period is later than the start of the processing liquid supply period. Therefore, vibration begins to be applied to the substrate after the processing liquid enters the recess. Vibration is not applied to the substrate until the processing liquid enters the recess. Therefore, it is easy to shorten the vibration period. Therefore, it is easy to process substrates efficiently.

[0018] In this substrate processing method, the processing liquid includes a first processing liquid and a second processing liquid, and the processing liquid supplying step includes a first processing liquid supplying step of supplying the first processing liquid to the substrate supported on the substrate support, and a second processing liquid supplying step of supplying the second processing liquid to the substrate supported on the substrate support after the first processing liquid supplying step, and the vibration period preferably overlaps with the timing of switching from the first processing liquid supplying step to the second processing liquid supplying step. The processing liquid includes the first processing liquid and the second processing liquid. The processing liquid supplying step includes a first processing liquid supplying step and a second processing liquid supplying step. In the first processing liquid supplying step, the first processing liquid is supplied to the substrate supported on the substrate support. In the first processing liquid supplying step, the first processing liquid is in a recess. After the first processing liquid supplying step, a second processing liquid supplying step is performed. In the second processing liquid supplying step, the second processing liquid is supplied to the substrate supported on the substrate support. When switching from the first processing liquid supply process to the second processing liquid supply process, the second processing liquid enters the recess. When switching from the first processing liquid supply process to the second processing liquid supply process, the first processing liquid in the recess is replaced with the second processing liquid. The vibration period overlaps with the timing of switching from the first processing liquid supply process to the second processing liquid supply process. Therefore, the first processing liquid in the recess is efficiently replaced with the second processing liquid. Therefore, the first processing liquid on the substrate is efficiently replaced with the second processing liquid.

[0019] In this substrate processing method, it is preferable that at least a portion of a first vibration period during which the first vibration step is performed overlaps with at least a portion of the processing liquid supply period, and that at least a portion of a second vibration period during which the second vibration step is performed overlaps with at least a portion of the processing liquid supply period. At least a portion of the first vibration period overlaps with at least a portion of the processing liquid supply period. Therefore, when the processing liquid is in the recess, vibrations at the natural frequency of the first layer are transmitted from the substrate support member to the substrate. The vibrations are then transmitted from the substrate to the processing liquid in the recess. Therefore, it is easy to vibrate the processing liquid in the recess. Therefore, it is easy for the processing liquid to enter and exit the recess. Similarly, at least a portion of the second vibration period overlaps with at least a portion of the processing liquid supply period. Therefore, when the processing liquid is in the recess, vibrations at the natural frequency of the second layer are transmitted from the substrate support member to the substrate. The vibrations are then transmitted from the substrate to the processing liquid in the recess. Therefore, it is easy to vibrate the processing liquid in the recess. Therefore, the processing liquid can easily enter and exit the recess.

[0020] In this substrate processing method, it is preferable that the second vibration period does not overlap with the first vibration period. Therefore, during the first vibration period, vibrations at the natural frequency of the first layer are applied to the first layer, and vibrations at the natural frequency of the second layer are not applied to the first layer. Therefore, it is easier to vibrate the first layer at a large frequency during the first vibration period. Similarly, during the second vibration period, vibrations at the natural frequency of the second layer are applied to the second layer, and vibrations at the natural frequency of the first layer are not applied to the second layer. Therefore, it is easier to vibrate the second layer at a large frequency during the second vibration period.

[0021] In the present substrate processing method, it is preferable that at least a portion of the second vibration period overlaps with at least a portion of the first vibration period, which makes it easy to shorten the entire first vibration period and the second vibration period, thereby facilitating efficient substrate processing.

[0022] In this substrate processing method, it is preferable that the second vibration period starts, followed by the first vibration period. The second vibration period starts first. During the second vibration period, it is easy to vibrate the processing liquid at the bottom of the recess strongly. The "bottom of the recess" refers to the portion of the recess near the second layer. Then, the first vibration period starts. During the first vibration period, it is easy to vibrate the processing liquid at the side of the recess strongly. The "side of the recess" refers to the portion of the recess near the first layer. In summary, during the second vibration period and the first vibration period, it is easy for the processing liquid at the bottom of the recess to flow into the external space through the side of the recess. Therefore, it is easy to replace all of the processing liquid in the recess with the processing liquid in the external space.

[0023] In this substrate processing method, it is preferable that the first layer includes a first surface, the second layer includes a second surface, and the third layer includes a third surface, the recess is defined by the first surface, the second surface, and the third surface, and the processing liquid contacts the first surface, the second surface, and the third surface during the processing liquid supply period. During the processing liquid supply period, the first surface contacts the processing liquid in the recess, the second surface contacts the processing liquid in the recess, and the third surface contacts the processing liquid in the recess. Therefore, during at least a portion of the vibration period, the first surface directly transmits vibrations to the processing liquid in the recess, the second surface directly transmits vibrations to the processing liquid in the recess, and the third surface directly transmits vibrations to the processing liquid in the recess. Therefore, it is easier to vibrate the processing liquid in the recess during at least a portion of the vibration period.

[0024] In this substrate processing method, it is preferable that the first vibration step is performed when the first surface is larger than the second surface, and the second vibration step is performed when the second surface is larger than the first surface. The first vibration step is performed when the first surface is larger than the second surface. Therefore, in the first vibration step, the substrate efficiently transmits vibrations to the processing liquid. The second vibration step is performed when the second surface is larger than the first surface. Therefore, in the second vibration step, the substrate efficiently transmits vibrations to the processing liquid.

[0025] In the present substrate processing method, the composition of the third layer is preferably the same as the composition of the first layer. Even if the third layer has the same composition as the first layer, the substrate can be properly processed by the present substrate processing method.

[0026] In the present substrate processing method, the composition of the third layer is preferably different from the composition of the first layer. Even if the third layer has a composition different from the composition of the first layer, the substrate can be properly processed by the present substrate processing method.

[0027] In this substrate processing method, the vibration step preferably includes a third vibration step of applying vibrations of the natural frequency of the third layer to the substrate. The vibration step includes the third vibration step. In the third vibration step, vibrations of the natural frequency of the third layer are applied to the substrate. Therefore, in the third vibration step, it is easy to vibrate the third layer to a large extent. Therefore, in the third vibration step, it is even easier to vibrate the processing liquid in the recess. Therefore, in the third vibration step, it is even easier for the processing liquid to enter and exit the recess.

[0028] In the present substrate processing method, it is preferable that the processing liquid contains an etching liquid, and that the second layer is etched with the etching liquid in the processing liquid supplying step, so that the recess is appropriately etched according to the present substrate processing method.

[0029] In the present substrate processing method, it is preferable that the processing liquid contains a cleaning liquid, and that the recess is cleaned with the cleaning liquid in the processing liquid supplying step. Therefore, according to the present substrate processing method, the recess is properly cleaned.

[0030] In this substrate processing method, the recess preferably has a width of 10 nm or less. Therefore, the recess is extremely narrow. Even when the recess is extremely narrow, the processing liquid can easily enter and exit the recess according to this substrate processing method. Therefore, even when the recess is extremely narrow, the substrate can be properly processed according to this substrate processing method. In fact, when the recess is extremely narrow, this substrate processing method exhibits a remarkable effect.

[0031] In this substrate processing method, the separation distance between the first layer and the third layer is preferably 10 nm or less. Therefore, the recess is extremely narrow. Even when the recess is extremely narrow, this substrate processing method allows the processing liquid to easily enter and exit the recess. Therefore, even when the recess is extremely narrow, this substrate processing method properly processes the substrate. In fact, when the recess is extremely narrow, this substrate processing method exhibits a remarkable effect.

[0032] The present invention is a substrate processing apparatus, wherein the substrate includes a first layer, a second layer, a third layer, and a recess, the second layer being located between the first layer and the third layer, the recess being formed by the second layer being recessed relative to the first layer and the third layer, the composition of the second layer being different from the composition of the first layer, and the composition of the second layer being different from the composition of the third layer, and the substrate processing apparatus includes a substrate support unit that supports the substrate, a processing liquid supply unit that supplies a processing liquid to the substrate supported by the substrate support unit, and a processing liquid supply unit that supplies a processing liquid to the substrate via the substrate support unit. The substrate processing apparatus comprises an oscillator that applies vibrations, and a control unit that controls the processing liquid supply unit and the oscillator, wherein during a processing liquid supply period in which the processing liquid supply unit supplies the processing liquid to the substrate supported by the substrate support unit, the processing liquid enters the recess, at least a portion of the vibration period in which the oscillator applies vibrations to the substrate via the substrate support unit overlaps with at least a portion of the processing liquid supply period, and the oscillator applies vibrations of the natural frequency of the first layer to the substrate and also applies vibrations of the natural frequency of the second layer to the substrate.

[0033] The substrate processing apparatus is for processing a substrate. The substrate includes a first layer, a second layer, a third layer, and a recess. The second layer is located between the first layer and the third layer. The recess is formed by the second layer being recessed relative to the first layer and the third layer. The second layer has a composition different from that of the first layer. The composition of the second layer is also different from that of the third layer.

[0034] The substrate processing apparatus includes a substrate support, a processing liquid supply, an oscillator, and a controller. The substrate support supports a substrate. The processing liquid supply supplies a processing liquid to the substrate supported by the substrate support. The oscillator applies vibrations to the substrate via the substrate support. The vibrations are transmitted from the substrate support to the substrate. The controller controls the processing liquid supply and the oscillator.

[0035] The processing liquid supply period is a period during which the processing liquid supply unit supplies the processing liquid to the substrate supported by the substrate support unit. During the processing liquid supply period, the processing liquid is present in the recess.

[0036] The vibration period is a period during which the vibrator applies vibrations to the substrate via the substrate support. At least a portion of the vibration period overlaps with at least a portion of the processing liquid supply period. Therefore, when the processing liquid is in the recess, the vibrations are transmitted from the substrate support to the substrate. Then, the vibrations are transmitted from the substrate to the processing liquid in the recess. Specifically, the vibrations are transmitted from the first layer, the second layer, and the third layer to the processing liquid in the recess. Therefore, it is easy to vibrate the processing liquid in the recess. Therefore, it is easy for the processing liquid to enter and exit the recess. For example, it is easy for the processing liquid to move back and forth between the recess and the external space. For example, it is easy for the processing liquid to flow from the recess to the external space. For example, it is easy for the processing liquid to flow from the external space to the recess. For example, it is difficult for the processing liquid to stagnate in the recess. For example, it is easy to replace the processing liquid in the recess with the processing liquid in the external space.

[0037] The vibrator applies vibrations of the natural frequency of the first layer to the substrate. Therefore, it is easy to vibrate the first layer at a large frequency. The vibrator applies vibrations of the natural frequency of the second layer to the substrate. Therefore, it is easy to vibrate the second layer at a large frequency. Therefore, it is even easier to vibrate the processing liquid in the recess. Therefore, it is even easier for the processing liquid to enter and exit the recess.

[0038] In summary, the present substrate processing apparatus allows the processing liquid to easily enter and exit the recess, thereby allowing the substrate to be processed appropriately.

[0039] In the substrate processing apparatus, the vibrator is preferably attached to the substrate support and vibrates the substrate support, so that the vibrator can easily apply vibration to the substrate via the substrate support.

[0040] According to the substrate processing method and substrate processing apparatus of the present invention, the substrate is processed appropriately.

[0041] 8(a) and 8(b) are detailed views of a portion of a substrate.

[0033] FIG. 8(a) is a plan view showing the inside of a substrate processing apparatus.

[0034] FIG. 8(b) is a control block diagram of a substrate processing apparatus.

[0035] FIG. 8(a) is a side view of a substrate.

[0036] FIG. 8(b) is a plan view of a substrate.

[0037] FIG. 8(b) is a detailed view of a first layer, a second layer, a third layer, and a recess of a substrate.

[0038] FIG. 8(a) is a diagram showing an example of the configuration of a processing unit of a first embodiment.

[0039] FIG. 8(b) is a flowchart showing an example of the procedure of a substrate processing method of a first embodiment.

[0039] FIG. 8(b) is a flowchart showing an example of the procedure of a substrate processing method of a modified embodiment, which is an example of the timing chart of the processing liquid supply step and the vibration step of the second embodiment.

[0039] FIG. 8(b) is a diagram showing the configuration of a processing unit of a modified embodiment.

[0039] FIG. 8(a) is a front view showing the configuration of a processing unit of a modified embodiment.

[0039] FIG. 8(b) is a side view showing the configuration of a processing unit of a modified embodiment.

[0042] A substrate processing method and a substrate processing apparatus according to the present invention will be described below with reference to the drawings.

[0043] 1. First Embodiment 1-1. Overview of Substrate Processing Apparatus Fig. 1 is a plan view showing the interior of a substrate processing apparatus 1. The substrate processing apparatus 1 performs liquid processing on a substrate W. In the liquid processing, a processing liquid is supplied to the substrate W.

[0044] The liquid process is, for example, a cleaning process. In the cleaning process, the substrate W is cleaned with a processing liquid. In the cleaning process, the processing liquid includes, for example, a cleaning liquid.

[0045] The substrate processing apparatus 1 includes an indexer unit 3 and a processing block 7. The processing block 7 is connected to the indexer unit 3. The indexer unit 3 supplies substrates W to the processing block 7. The processing block 7 processes the substrates W. The indexer unit 3 retrieves the substrates W from the processing block 7.

[0046] For convenience, in this specification, the direction in which the indexer unit 3 and the processing block 7 are aligned is referred to as the "front-rear direction X." The front-rear direction X is horizontal. Within the front-rear direction X, the direction from the processing block 7 toward the indexer unit 3 is referred to as the "front." The direction opposite to the front is referred to as the "rear." The direction perpendicular to the front-rear direction X is referred to as the "width direction Y." The width direction Y is horizontal. One direction in the "width direction Y" is referred to as the "right" as appropriate. The direction opposite to the right is referred to as the "left." When the front-rear direction X and the width direction Y are not distinguished, they are simply referred to as the "horizontal direction." The direction perpendicular to the horizontal direction is referred to as the "vertical direction Z." In each figure, for reference, front, rear, right, left, top, and bottom are indicated as appropriate.

[0047] The carrier C is used to transport substrates W between the substrate processing apparatus 1 and an external device of the substrate processing apparatus 1. The carrier C accommodates a plurality of substrates W. The carrier C is, for example, a front opening unified pod (FOUP), a standard mechanical interface (SMIF), or an open cassette (OC).

[0048] The indexer unit 3 includes a plurality of (for example, four) carrier placement units 4. The carriers C are placed on the carrier placement units 4.

[0049] The indexer unit 3 includes a transport mechanism 5. The transport mechanism 5 transports the substrates W between the carriers C on the carrier platform 4 and the processing block 7.

[0050] The transport mechanism 5 includes a hand 5a and a hand driver 5b. The hand 5a supports the substrate W. The hand driver 5b is connected to the hand 5a. The hand driver 5b moves the hand 5a. The hand driver 5b moves the hand 5a, for example, in the front-rear direction X, the width direction Y, and the vertical direction Z. The hand driver 5b rotates the hand 5a, for example, in a horizontal plane.

[0051] The processing block 7 includes a plurality of processing units 11. Each processing unit 11 performs processing on a substrate W.

[0052] Each processing unit 11 includes a substrate support 12. The substrate support 12 supports a substrate W.

[0053] The processing block 7 includes a transport mechanism 8. The transport mechanism 8 transports the substrates W. The transport mechanism 8 transports the substrates W between the indexer section 3 and the processing units 11. The transport mechanism 8 transports the substrates W between the transport mechanism 5 and the substrate support section 12.

[0054] The transport mechanism 8 includes a hand 8a and a hand driver 8b. The hand 8a supports the substrate W. The hand driver 8b is connected to the hand 8a. The hand driver 8b moves the hand 8a. The hand driver 8b moves the hand 8a, for example, in the front-rear direction X, the width direction Y, and the vertical direction Z. The hand driver 8b rotates the hand 8a, for example, in a horizontal plane.

[0055] 2 is a control block diagram of the substrate processing apparatus 1. The substrate processing apparatus 1 includes a control unit 10. The control unit 10 controls the transport mechanisms 5 and 8 and the processing unit 11. The control unit 10 is communicatively connected to the transport mechanisms 5 and 8 and the processing unit 11.

[0056] The control unit 10 is realized by a central processing unit (CPU) that executes various processes, a random-access memory (RAM) that serves as a work area for the processes, a storage medium such as a fixed disk, etc. The control unit 10 has various types of information pre-stored in the storage medium. The information held by the control unit 10 includes, for example, transport information and processing information. The transport information defines the operation procedures of the transport mechanisms 5 and 8. The processing information defines the operation procedures of the processing unit 11. The processing information is also called a processing recipe.

[0057] An example of the operation of the substrate processing apparatus 1 will now be briefly described.

[0058] The transport mechanism 5 takes out the substrate W from the carrier C on the carrier mount part 4. The transport mechanism 5 hands over the substrate W to the transport mechanism 8.

[0059] The transport mechanism 8 delivers the substrate W to the processing unit 11. Specifically, the transport mechanism 8 places the substrate W on the substrate support part 12. The substrate support part 12 supports the substrate W.

[0060] Each processing unit 11 processes a substrate W supported by a substrate support 12. Each processing unit 11 performs liquid processing on the substrate W.

[0061] After the processing unit 11 has processed the substrate W, the transport mechanism 8 takes the substrate W from the processing unit 11. Specifically, the transport mechanism 8 takes the substrate W from the substrate support 12. The transport mechanism 8 hands the substrate W over to the transport mechanism 5.

[0062] The transport mechanism 5 loads the substrate W into the carrier C.

[0063] 1-2. Structure of the Substrate W The substrate W is, for example, any one of a semiconductor wafer, a liquid crystal display substrate, an organic electroluminescence (EL) substrate, an FPD (Flat Panel Display) substrate, an optical display substrate, a magnetic disk substrate, an optical disk substrate, a magneto-optical disk substrate, a photomask substrate, and a solar cell substrate.

[0064] Fig. 3(a) is a side view of the substrate W. Fig. 3(b) is a plan view of the substrate W. The substrate W has a thin, flat plate shape. The substrate W has a substantially circular shape in a plan view.

[0065] The substrate W has a surface W1, a surface W2, and a peripheral edge W3. The surface W2 is opposite the surface W1. The surfaces W1 and W2 each have a substantially circular shape in a plan view. The surfaces W1 and W2 each are substantially flat. The surfaces W1 and W2 each are substantially flat.

[0066] 4 is a detailed view of a portion of a substrate W. The substrate W includes a first layer E, a second layer F, a third layer G, and a recess A. The first layer E, the second layer F, the third layer G, and the recess A are each located on a surface W1. The first layer E, the second layer F, and the third layer G are each part of the substrate W. The first layer E, the second layer F, and the third layer G are each structures. The recess A is a space.

[0067] The first layer E and the third layer G are spaced apart from each other. The second layer F is located between the first layer E and the third layer G.

[0068] For example, the first layer E, the second layer F, and the third layer G are stacked one on top of the other. For example, the first layer E, the second layer F, and the third layer G are stacked in this order.

[0069] The first layer E has, for example, a plate shape. The first layer E has, for example, a film shape. The second layer F has, for example, a plate shape. The second layer F has, for example, a film shape. The third layer G has, for example, a plate shape. The third layer G has, for example, a film shape.

[0070] The recess A is located between the first layer E and the third layer G. The recess A is located between the first layer E, the second layer F, and the third layer G. The recess A is formed by the second layer F being recessed relative to the first layer E and the third layer G.

[0071] Recess A is an unoccupied space. The first layer E is not present in recess A. The second layer F is not present in recess A. The third layer G is not present in recess A. The substrate W is not present in recess A.

[0072] The first layer E includes a first surface E1, the second layer F includes a second surface F1, and the third layer G includes a third surface G1.

[0073] The first surface E1 and the third surface G1 are spaced apart. The first surface E1 and the third surface G1 face each other. The first surface E1 and the third surface G1 are, for example, parallel. The second surface F1 extends from the first surface E1 to the third surface G1.

[0074] For example, the first surface E1 may be smaller than the second surface F1. The area of ​​the first surface E1 may be smaller than the area of ​​the second surface F1. Alternatively, the first surface E1 may be larger than the second surface F1. The area of ​​the first surface E1 may be larger than the area of ​​the second surface F1.

[0075] For example, the third surface G1 may be smaller than the second surface F1. The area of ​​the third surface G1 may be smaller than the area of ​​the second surface F1. Alternatively, the third surface G1 may be larger than the second surface F1. The area of ​​the third surface G1 may be larger than the area of ​​the second surface F1.

[0076] The recess A is defined by a first surface E1, a second surface F1, and a third surface G1. The recess A is disposed between the first surface E1 and the third surface G1. The recess A is disposed between the first surface E1, the second surface F1, and the third surface G1. The recess A is in contact with the first surface E1. The recess A is in contact with the second surface F1. The recess A is in contact with the third surface G1.

[0077] The recess A has a groove shape and is recessed in a depth direction U.

[0078] The portion of the recess A near the first layer E is referred to as the "side AE ​​of the recess A." The portion of the recess A near the second layer F is referred to as the "side AF of the recess A." The portion of the recess A near the third layer G is referred to as the "side AG of the recess A." In other words, the area of ​​the recess A near the first surface E1 is referred to as the "side AE ​​of the recess A." The area of ​​the recess A near the second surface F1 is referred to as the "bottom AF of the recess A." The area of ​​the recess A near the third surface G1 is referred to as the "side AG of the recess A."

[0079] The recess A is narrow.

[0080] 4 shows the distance D1. The distance D1 is the width of the recess A. For example, the distance D1 is the separation distance between the first layer E and the third layer G. For example, the distance D1 is the separation distance between the first surface E1 and the third surface G1. The distance D1 is small. For example, the distance D1 is 50 nm or less. For example, the distance D1 is 20 nm or less. For example, the distance D1 is 10 nm or less. For example, the distance D1 is several nm.

[0081] 4 shows the distance D2. The distance D2 is the depth of the recess A. For example, the distance D2 is the length of the first surface E1. The distance D2 is the length of the first surface E1 in the depth direction U. For example, the distance D2 is the length of the second surface G1. The distance D2 is the length of the second surface G1 in the depth direction U. For example, the distance D2 may be shorter than the distance D1. Alternatively, the distance D2 may be longer than the distance D1.

[0082] The recess A is not closed. The recess A is open. The recess A is open to the outside of the recess A.

[0083] The outside of the recess A is appropriately referred to as an external space H. The external space H is a space. The external space H is an unoccupied space.

[0084] 4 illustrates, by a dashed dotted line, a boundary I between the recess A and the external space H. The boundary I is an imaginary plane located between the recess A and the external space H. The recess A and the external space H are in communication with each other through the boundary I.

[0085] The external space H is sufficiently wider than the recess A. The external space H has a width sufficiently greater than the width of the recess A. The width of the external space H is sufficiently greater than the distance D1.

[0086] The second layer F has a composition different from that of the first layer E. The composition of the second layer F is also different from that of the third layer G.

[0087] For example, the composition of the third layer G is different from the composition of the first layer E.

[0088] The first layer E is made of, for example, single crystal silicon, the second layer F is made of, for example, silicon oxide, and the third layer G is made of, for example, silicon nitride.

[0089] The first layer E has a natural frequency JE, the second layer F has a natural frequency JF, and the third layer G has a natural frequency JG.

[0090] The natural frequency JF is different from the natural frequency JE, for example. The natural frequency JG is different from the natural frequency JE, for example. The natural frequency JG is different from the natural frequency JF, for example.

[0091] The natural frequency JE is, for example, 17.6 kHz, the natural frequency JF is, for example, 8.44 kHz, and the natural frequency JG is, for example, 4.98 kHz.

[0092] When the natural frequencies JE, JF, and JG are not distinguished from one another, the natural frequencies JE, JF, and JG are referred to as the "natural frequency J."

[0093] The natural frequency J can be obtained, for example, by experiment or calculation.

[0094] For example, the natural frequency J can be obtained by the formula (1): J = 1 / (2πK) * (2L / M) １／２ (1) K: Amplitude [m] L: Intensity [W / m ２ ] M: Acoustic impedance [kg / (cm ２ s) ]

[0095] For example, the amplitude K is 0.005 μm and the intensity L is 0.35 W / cm ２ and the acoustic impedance M is the acoustic impedance of the first layer E, the natural frequency J in equation (1) is equal to the natural frequency JE of the first layer E.

[0096] For example, the amplitude K is 0.005 μm and the intensity L is 0.35 W / cm ２ and the acoustic impedance M is the acoustic impedance of the second layer F, the natural frequency J in equation (1) is equal to the natural frequency JF of the second layer F.

[0097] For example, the amplitude K is 0.005 μm and the intensity L is 0.35 W / cm ２and when the acoustic impedance M is the acoustic impedance of the third layer G, the natural frequency J in equation (1) is equal to the natural frequency JG of the third layer G.

[0098] 1-3. Configuration of Processing Unit 11 Fig. 5 is a diagram showing the configuration of the processing unit 11 in the first embodiment. Each processing unit 11 has the same structure. The processing units 11 are classified as single-wafer processing units. That is, each processing unit 11 processes only one substrate W at a time.

[0099] The substrate support 12 supports only one substrate W at a time. The substrate support 12 supports the substrate W in a substantially horizontal position. When the substrate W is supported by the substrate support 12, the surface W1 is horizontal.

[0100] When the substrate W is supported by the substrate support 12, the surface W1 faces upward. When the substrate W is supported by the substrate support 12, the surface W1 corresponds to the upper surface of the substrate W. When the substrate W is supported by the substrate support 12, the surface W2 corresponds to the lower surface of the substrate W. The lower surface of the substrate W is also called the backside of the substrate W.

[0101] The following illustrates an example of the configuration of the substrate support 12. The substrate support 12 is, for example, a mechanical gripper that mechanically grips the substrate W. The substrate support 12 mechanically grips, for example, the peripheral edge W3 of the substrate W. The substrate support 12 comes into contact with, for example, the peripheral edge W3 of the substrate W. The substrate support 12 comes into contact with, for example, the surface W2. The substrate support 12 does not come into contact with the surface W1.

[0102] For example, the substrate support part 12 includes one plate 12a and multiple support pins 12b. The plate 12a has a plate shape. The plate 12a extends horizontally. Although not shown, the plate 12a has approximately the same size as the substrate W in a plan view. Each support pin 12b is supported by the plate 12a. The support pins 12b are arranged on the periphery of the plate 12a. Each support pin 12b extends upward from the plate 12a. Each support pin 12b contacts the periphery edge W3 of the substrate W. Each support pin 12b grips the periphery edge W3 of the substrate W.

[0103] The processing unit 11 includes a vibrator 13. The vibrator 13 generates vibrations. The vibrator 13 generates vibrations of different frequencies. The vibrator 13 changes the frequency of the vibrations. For example, the vibrations of the vibrator 13 may be ultrasonic vibrations. The vibrations of the vibrator 13 may have a frequency higher than 20 kHz. Alternatively, the vibrations of the vibrator 13 do not have to be ultrasonic vibrations. The vibrations of the vibrator 13 may have a frequency of 20 kHz or less. The vibrator 13 includes, for example, a piezoelectric element.

[0104] The vibrator 13 applies vibration to the substrate W via the substrate support part 12. The vibrator 13 is attached to the substrate support part 12. The vibrator 13 vibrates the substrate support part 12. The vibrator 13 directly vibrates the substrate support part 12.

[0105] For example, the vibrator 13 is attached to at least one support pin 12b.

[0106] The processing unit 11 includes a rotation drive unit 14. The rotation drive unit 14 is connected to the substrate support unit 12. The rotation drive unit 14 rotates the substrate support unit 12. The substrate W held by the substrate support unit 12 rotates integrally with the substrate support unit 12. The substrate W held by the substrate support unit 12 rotates, for example, around a rotation axis B. The rotation axis B passes through the center of the substrate W, for example. The rotation axis B extends, for example, in the vertical direction Z.

[0107] The processing unit 11 includes a supply unit 15a. The supply unit 15a supplies a processing liquid R to a substrate W. The supply unit 15a supplies the processing liquid R to a substrate W held on a substrate support unit 12. The supply unit 15a supplies the processing liquid R to a surface W1 of the substrate W held on the substrate support unit 12.

[0108] The processing liquid R is, for example, a cleaning liquid, also called a rinse liquid, such as deionized water (DIW).

[0109] The processing unit 11 includes a supply unit 15b. The supply unit 15b supplies a dry gas to the substrate W. The supply unit 15b supplies the dry gas to the substrate W held on the substrate support unit 12. The supply unit 15b supplies the dry gas to a surface W1 of the substrate W held on the substrate support unit 12.

[0110] The dry gas includes at least one of air and an inert gas, for example, compressed air, and nitrogen gas.

[0111] The configuration of the supply unit 15a is illustrated. The supply unit 15a includes a nozzle 16a, a pipe 17a, and a valve 18a. The nozzle 16a is disposed above the substrate W held by the substrate support 12. The nozzle 16a ejects the processing liquid R. The pipe 17a is connected to the nozzle 16a. The valve 18a is provided on the pipe 17a. When the valve 18a is open, the nozzle 16a ejects the processing liquid R. When the valve 18a is closed, the nozzle 16a does not eject the processing liquid R.

[0112] The supply unit 15b has a configuration similar to that of the supply unit 15a. For example, the supply unit 15b includes a nozzle 16b, a pipe 17b, and a valve 18b. The nozzle 16b ejects a drying gas. The pipe 17b is connected to the nozzle 16b. The valve 18b is provided on the pipe 17b. The valve 18b controls the ejection of the drying gas from the nozzle 16b.

[0113] The supply unit 15a is connected to a supply source 19a, which supplies the treatment liquid R to the supply unit 15a.

[0114] Supply 15b is connected to a source 19b, which delivers a drying gas to supply 15b.

[0115] The processing unit 11 may further include a cup (not shown). The cup is disposed on the side of the substrate support 12. The cup surrounds the substrate support 12. The cup catches liquid splashed from the substrate W held by the substrate support 12.

[0116] Referring to Fig. 2, the control unit 10 controls the vibrator 13. The control unit 10 adjusts the frequency of vibration of the vibrator 13. The control unit 10 controls the rotation drive unit 14. The control unit 10 controls the supply units 15a and 15b. The control unit 10 controls the valves 18a and 18b.

[0117] The supply unit 15a is an example of the processing liquid supply unit of the present invention.

[0118] 1-4. Procedure of the Substrate Processing Method The substrate processing method is performed in the processing unit 11. The substrate processing method is for processing the substrate W. The substrate processing method is for processing the substrate W held by the substrate support 12.

[0119] 6 is a flowchart showing the procedure of the substrate processing method of the first embodiment. The substrate processing method includes a processing liquid supplying step, a vibration step, and a drying step. First, the processing liquid supplying step is performed. After the processing liquid supplying step, the drying step is performed. The vibration step is performed in parallel with the processing liquid supplying step. The vibration step includes a first vibration step and a second vibration step.

[0120] Each step will be described with reference to Figures 5 and 6. In the following description, each element of the processing unit 11 operates under the control of the control unit 10.

[0121] Step S1: Processing Liquid Supplying Step In the processing liquid supplying step, the processing liquid R is supplied to the substrate W supported by the substrate support part 12. Specifically, the supply part 15a supplies the processing liquid R to the substrate W supported by the substrate support part 12.

[0122] The processing liquid R is, for example, a cleaning liquid. The substrate W is cleaned with the processing liquid R, for example.

[0123] Step S2: Vibration Step In the vibration step, vibration is applied to the substrate W via the substrate support part 12. Specifically, the vibrator 13 applies vibration to the substrate W via the substrate support part 12.

[0124] The vibrations are transmitted from the oscillator 13 to the substrate support 12. The vibrations are transmitted from the substrate support 12 to the substrate W. The vibrations are transmitted from the substrate support 12 to the peripheral edge W3. The vibrations are transmitted from the peripheral edge W3 to the surface W1. The vibrations are transmitted from the peripheral edge W3 to the first layer E, the second layer F, and the third layer G.

[0125] Step S2A: First Vibration Step In the first vibration step, vibration of the natural frequency JE of the first layer E is applied to the substrate W. Specifically, the vibrator 13 applies vibration of the natural frequency JE to the substrate W. For example, the vibrator 13 applies vibration of 17.6 kHz to the substrate W.

[0126] Step S2B: Second Vibration Step The vibration step includes a second vibration step. In the second vibration step, vibration of the natural frequency JF of the second layer F is applied to the substrate W. Specifically, the vibrator 13 applies vibration of the natural frequency JF to the substrate W. For example, the vibrator 13 applies vibration of 8.44 kHz to the substrate W.

[0127] Step S3: Drying Step In the drying step, the substrate W is dried. For example, the rotation drive unit 14 rotates the substrate W supported by the substrate support unit 12. For example, the supply unit 15b supplies a drying gas to the substrate W supported by the substrate support unit 12.

[0128] In the processing liquid supplying step, the rotation driving unit 14 may rotate the substrate W held by the substrate holding unit 13. In the vibration step, the rotation driving unit 14 may rotate the substrate W held by the substrate holding unit 13.

[0129] 7 is an example of a timing chart of the processing liquid supply step and the vibration step of the first embodiment. The horizontal axis of FIG. 7 represents time. The processing liquid supply period P is a period during which the processing liquid supply step is performed. The processing liquid supply period P is a period during which the supply unit 15a supplies the processing liquid R to the substrate W supported by the substrate support unit 12.

[0130] The processing liquid supply period P is, for example, a period from time T1 to time T4. The processing liquid supply period P starts at time T1 and ends at time T4.

[0131] The vibration step is performed during the vibration period Q. The vibration period Q is a period during which the vibrator 13 applies vibration to the substrate W via the substrate support 12.

[0132] The vibration period Q is, for example, the period from time T2 to time T4. The vibration period Q starts at time T2. The vibration period Q ends at time T4.

[0133] The vibration period Q includes a first vibration period Q1. The first vibration period Q1 is a period during which the first vibration step is performed. The first vibration period Q1 is a period during which the vibrator 13 applies vibrations of the natural frequency JE to the substrate W.

[0134] The first vibration period Q1 is, for example, the period from time T3 to time T4. The first vibration period Q1 starts at time T3. The first vibration period Q1 ends at time T4.

[0135] The vibration period Q includes a second vibration period Q2. The second vibration period Q2 is a period during which the second vibration step is performed. The second vibration period Q2 is a period during which the vibrator 13 applies vibrations of the natural frequency JF to the substrate W.

[0136] The second vibration period Q2 is, for example, the period from time T2 to time T3. The second vibration period Q2 starts at time T2. The second vibration period Q2 ends at time T3.

[0137] At least a portion of the vibration period Q overlaps with at least a portion of the treatment liquid supply period P. For example, the entire vibration period Q overlaps with the treatment liquid supply period P.

[0138] The start of the vibration period Q is later than the start of the treatment liquid supply period P. That is, the treatment liquid supply period P starts, and then the vibration period Q starts.

[0139] The vibration period Q ends simultaneously with the end of the treatment liquid supply period P.

[0140] The length of the vibration period Q is shorter than the length of the treatment liquid supply period P.

[0141] At least a portion of the first vibration period Q1 overlaps with at least a portion of the treatment liquid supply period P. For example, the entire first vibration period Q1 overlaps with the treatment liquid supply period P.

[0142] The start of the first vibration period Q1 is later than the start of the treatment liquid supply period P.

[0143] The first vibration period Q1 ends simultaneously with the end of the treatment liquid supply period P.

[0144] At least a portion of the second vibration period Q2 overlaps with at least a portion of the treatment liquid supply period P. For example, the entire second vibration period Q2 overlaps with the treatment liquid supply period P.

[0145] The second vibration period Q2 starts later than the treatment liquid supply period P.

[0146] The second vibration period Q2 ends earlier than the processing liquid supply period P ends.

[0147] For example, the second vibration period Q2 starts earlier than the first vibration period Q1, i.e., the second vibration period Q2 starts before the first vibration period Q1 starts.

[0148] For example, the end of the second vibration period Q2 is simultaneous with the start of the first vibration period Q1, i.e., when the second vibration period Q2 ends, the first vibration period Q1 starts.

[0149] For example, the second vibration period Q2 does not overlap with the first vibration period Q1.

[0150] 4, during the processing liquid supply period P, the processing liquid R is supplied to the outer space H. During the processing liquid supply period P, the processing liquid R is supplied to the recess A.

[0151] At the start of the processing liquid supply period P, the processing liquid R enters the recess A. At the start of the processing liquid supply period P, the processing liquid R enters the recess A from the outer space H through the boundary I.

[0152] During the processing liquid supply period P, the processing liquid R is present in the recess A. During the processing liquid supply period P, the recess A is filled with the processing liquid R. The processing liquid R remains in the recess A until the end of the processing liquid supply period P.

[0153] The processing liquid R is, for example, a cleaning liquid. The recess A is cleaned with the processing liquid R. For example, particles are removed from the recess A.

[0154] During the treatment liquid supply period P, at least a portion of the first layer E comes into contact with the treatment liquid R. At least a portion of the first layer E is exposed to the treatment liquid R. The first layer E is washed with the treatment liquid R.

[0155] During the processing liquid supply period P, the first surface E1 comes into contact with the processing liquid R. The first surface E1 is exposed to the processing liquid R. The first surface E1 is cleaned with the processing liquid R.

[0156] During the processing liquid supply period P, at least a portion of the second layer F comes into contact with the processing liquid R. At least a portion of the second layer F is exposed to the processing liquid R. The second layer F is washed with the processing liquid R.

[0157] During the processing liquid supply period P, the second surface F1 comes into contact with the processing liquid R. The second surface F1 is exposed to the processing liquid R. The second surface F1 is cleaned with the processing liquid R.

[0158] During the processing liquid supply period P, at least a portion of the third layer G comes into contact with the processing liquid R. At least a portion of the third layer G is exposed to the processing liquid R. The third layer G is cleaned with the processing liquid R.

[0159] During the processing liquid supply period P, the third surface G1 comes into contact with the processing liquid R. The third surface G1 is exposed to the processing liquid R. The third surface G1 is cleaned with the processing liquid R.

[0160] During the vibration period Q, the substrate W vibrates. During the vibration period Q, the processing liquid R is in the recess A. During the vibration period Q, the vibrations are transmitted from the substrate W to the processing liquid R. During the vibration period Q, the vibrations are transmitted from the substrate W to the processing liquid R in the recess A.

[0161] Specifically, the first layer E vibrates during the vibration period Q. The vibration is transmitted from the first layer E to the processing liquid R in the recess A. The vibration is transmitted from the first surface E1 to the processing liquid R in the side portion AE.

[0162] During the vibration period Q, the second layer F vibrates. The vibration is transmitted from the second layer F to the processing liquid R in the recess A. The vibration is transmitted from the second surface F1 to the processing liquid R in the bottom AF.

[0163] During the vibration period Q, the third layer G vibrates. The vibration is transmitted from the third layer G to the processing liquid R in the recess A. The vibration is transmitted from the third surface G1 to the processing liquid R in the side portion AG.

[0164] During the first vibration period Q1, the first layer E vibrates at the natural frequency JE. Therefore, the first layer E vibrates greatly. Therefore, the vibration is efficiently transmitted from the first layer E to the processing liquid R in the recess A. The vibration is efficiently transmitted from the first surface E1 to the processing liquid R in the side portion AE.

[0165] During the second vibration period Q2, the second layer F vibrates at the natural frequency JF. Therefore, the second layer F vibrates strongly. Therefore, the vibration is efficiently transmitted from the second layer F to the processing liquid R in the recess A. The vibration is transmitted from the second surface F1 to the processing liquid R in the bottom AF.

[0166] The processing liquid R in the recess A will be referred to as the "processing liquid RA" for convenience. During the vibration period Q, it is easy to move the processing liquid RA. During the vibration period Q, it is easy to stir the processing liquid RA.

[0167] Therefore, during the vibration period Q, the processing liquid R can easily move between the recess A and the external space H through the boundary I.

[0168] The processing liquid R in the external space H is referred to as the "processing liquid RH" for convenience. During the vibration period Q, it is easy to replace the processing liquid RA with the processing liquid RH.

[0169] For example, during the vibration period Q, it is easy for particles to move from the recess A to the external space H. That is, during the vibration period Q, it is easy to remove particles from the recess A.

[0170] As a result, it is easy for the particles to move from the external space H to the outside of the substrate W. It is easy to remove the particles from the substrate W. It is easy to clean the substrate W with high quality.

[0171] 1-5. Effects of the First Embodiment The substrate processing method is for processing a substrate W. The substrate W includes a first layer E, a second layer F, a third layer G, and a recess A. The second layer F is located between the first layer E and the third layer G. The recess A is formed by the second layer F being recessed relative to the first layer E and the third layer G. The second layer F has a composition different from that of the first layer E. The composition of the second layer F is also different from the composition of the third layer G.

[0172] The substrate processing method includes a processing liquid supplying step and a vibration step. In the processing liquid supplying step, a processing liquid R is supplied to a substrate W supported by a substrate support 12. In the vibration step, vibrations are applied to the substrate W via the substrate support 12. The vibrations are transmitted from the substrate support 12 to the substrate W.

[0173] The processing liquid supply period P is a period during which the processing liquid supply step is performed. At the start of the processing liquid supply period P, the processing liquid R enters the recess A. Therefore, during the processing liquid supply period P, the processing liquid R is in the recess A.

[0174] The vibration period Q is a period during which the vibration step is performed. At least a portion of the vibration period Q overlaps with at least a portion of the processing liquid supply period P. Therefore, when the processing liquid R is in the recess A, the vibration is transmitted from the substrate support 12 to the substrate W. Then, the vibration is transmitted from the substrate W to the processing liquid RA in the recess A. Specifically, the vibration is transmitted to the processing liquid RA from the first layer E, the second layer F, and the third layer G. Therefore, it is easy to vibrate the processing liquid RA. Therefore, it is easy for the processing liquid R to enter and exit the recess A. For example, it is easy for the processing liquid R to move back and forth between the recess A and the external space H. For example, it is easy for the processing liquid R to flow from the recess A to the external space H. For example, it is easy for the processing liquid R to flow from the recess A to the external space H. For example, it is easy for the processing liquid R to flow from the external space H to the recess A. For example, it is difficult for the processing liquid R to stagnate in the recess A. For example, it is easy to replace the processing liquid RA in the recess A with the processing liquid RH in the external space H.

[0175] The vibration step includes a first vibration step. The vibration in the first vibration step has the natural frequency JE of the first layer E. In the first vibration step, vibration of the natural frequency JE of the first layer E is applied to the substrate W. In the first vibration step, the substrate W vibrates at the natural frequency JE. Therefore, in the first vibration step, it is easy to vibrate the first layer E to a large extent. Therefore, in the first vibration step, it is even easier to vibrate the processing liquid RA in the recess A. Therefore, in the first vibration step, it is even easier for the processing liquid R to enter and exit the recess A.

[0176] The vibration step includes a second vibration step. The vibration in the second vibration step has the natural frequency JF of the second layer F. In the second vibration step, vibration of the natural frequency JF of the second layer F is applied to the substrate W. In the second vibration step, the substrate W vibrates at the natural frequency JF. Therefore, in the second vibration step, it is easy to vibrate the second layer F to a large extent. Therefore, in the second vibration step, it is even easier to vibrate the processing liquid RA in the recess A. Therefore, in the second vibration step, it is even easier for the processing liquid R to enter and exit the recess A.

[0177] In summary, according to the substrate processing method, it is easy to make the processing liquid R enter and exit the recess A. Therefore, according to the substrate processing method, the substrate W is appropriately processed. For example, according to the substrate processing method, the quality of the processing performed on the substrate W is high.

[0178] As described above, in the substrate processing method, it is easy to cause the processing liquid R to enter and exit the recess A. Therefore, in the substrate processing method, the substrate W is processed efficiently. Therefore, it is easy to shorten the time required for the substrate processing method.

[0179] As described above, the substrate processing method efficiently processes the substrate W. Therefore, it is easy to reduce the amount of processing liquid R required for the substrate processing method.

[0180] During the processing liquid supply period P, at least a portion of the first layer E comes into contact with the processing liquid R. During the processing liquid supply period P, at least a portion of the second layer F comes into contact with the processing liquid R. As described above, at least a portion of the vibration period Q overlaps with at least a portion of the processing liquid supply period P. Therefore, during at least a portion of the vibration period Q, the first layer E directly transmits vibrations to the processing liquid R. During at least a portion of the vibration period Q, the second layer F directly transmits vibrations to the processing liquid R. Therefore, during at least a portion of the vibration period Q, it is easier to vibrate the processing liquid RA in the recess A.

[0181] At the start of the processing liquid supply period P, the processing liquid R enters the recess A. The start of the vibration period Q is later than the start of the processing liquid supply period P. Therefore, vibration begins to be applied to the substrate W after the processing liquid R enters the recess A. Vibration is not applied to the substrate W until the processing liquid R enters the recess A. Therefore, it is easy to shorten the vibration period Q. For example, it is easy to make the vibration period Q shorter than the processing liquid supply period P. Therefore, it is easy to process the substrate W efficiently.

[0182] After the start of the processing liquid supply period P and before the start of the vibration period Q, the processing liquid RA in the recess A is in a first state in which it is not subjected to vibration. After the start of the vibration period Q, the processing liquid RA is in a second state in which it is subjected to vibration. In this way, the processing liquid RA changes from the first state to the second state. Specifically, at the start of the vibration period Q, the processing liquid RA changes from the first state to the second state. When the processing liquid RA changes from the first state to the second state, the force acting on the processing liquid RA changes. For this reason, it is easier to move the processing liquid RA when it changes from the first state to the second state. Therefore, it is easier to replace the processing liquid RA with the processing liquid RH when the processing liquid RA changes from the first state to the second state.

[0183] The first vibration period Q1 is a period during which the first vibration step is performed. At least a portion of the first vibration period Q1 overlaps with at least a portion of the processing liquid supply period P. Therefore, when the processing liquid R is in the recess A, vibrations of the natural frequency JE are transmitted from the substrate support 12 to the substrate W. The vibrations are then transmitted from the substrate W to the processing liquid RA in the recess A. Therefore, it is easy to vibrate the processing liquid RA. Therefore, it is easy for the processing liquid R to enter and exit the recess A.

[0184] The second vibration period Q2 is a period during which the second vibration step is performed. At least a portion of the second vibration period Q2 overlaps with at least a portion of the processing liquid supply period P. Therefore, when the processing liquid R is in the recess A, the vibration of the natural frequency JF of the second layer F is transmitted from the substrate support 12 to the substrate W. The vibration is then transmitted from the substrate W to the processing liquid RA in the recess A. Therefore, it is easy to vibrate the processing liquid RA. Therefore, it is easy for the processing liquid R to enter and exit the recess A.

[0185] The first vibration period Q1 does not overlap with the second vibration period Q2. Therefore, during the first vibration period Q1, vibrations of the natural frequency JE of the first layer E are applied to the first layer E, and vibrations of the natural frequency JF of the second layer F are not applied to the first layer E. Therefore, during the first vibration period Q1, the magnitude of the vibration of the first layer E does not decrease due to the natural frequency JF. In other words, the magnitude of the vibration of the first layer E when vibrations of the natural frequency JE are applied to the first layer E, and vibrations of the natural frequency JF are not applied to the first layer E, is greater than the magnitude of the vibration of the first layer E when vibrations of the natural frequency JE and the natural frequency JF are simultaneously applied to the first layer E. Therefore, it is easier to vibrate the first layer E to a large extent during the first vibration period Q1.

[0186] Similarly, the second vibration period Q2 does not overlap with the first vibration period Q1. During the second vibration period Q2, vibrations of the second layer F at the natural frequency JF are applied to the second layer F, and vibrations of the first layer E at the natural frequency JE are not applied to the second layer F. Therefore, during the second vibration period Q2, the magnitude of the vibration of the second layer F does not decrease due to the natural frequency JE. Therefore, it is easier to vibrate the second layer F at a large magnitude during the second vibration period Q2.

[0187] The second vibration period Q2 starts, followed by the first vibration period Q1. Specifically, the second vibration period Q2 starts first. During the second vibration period Q2, it is easy to vibrate the processing liquid RA at the bottom AF of the recess A by a large amount. Then, the first vibration period Q1 starts. During the first vibration period Q1, it is easy to vibrate the processing liquid RA at the side AE ​​of the recess A by a large amount. In summary, during the second vibration period Q2 and the first vibration period Q1, it is easy for the processing liquid RA at the bottom AF of the recess A to flow into the external space H through the side AE ​​of the recess A. Therefore, it is easy to replace all of the processing liquid RA in the recess A with the processing liquid RH in the external space H.

[0188] The first layer E includes a first surface E1. The second layer F includes a second surface F1. The third layer G includes a third surface G1. The recess A is defined by the first surface E1, the second surface F1, and the third surface G1. During the processing liquid supply period P, the processing liquid R contacts the first surface E1, the second surface F1, and the third surface G1. Therefore, during at least a portion of the vibration period Q, the first surface E1 directly transmits vibrations to the processing liquid RA in the recess A. During at least a portion of the vibration period Q, the second surface F1 directly transmits vibrations to the processing liquid RA. During at least a portion of the vibration period Q, the third surface G1 directly transmits vibrations to the processing liquid RA. Therefore, during at least a portion of the vibration period Q, it is easier to vibrate the processing liquid RA.

[0189] The composition of the third layer G is different from the composition of the first layer E. Even when the third layer G has a composition different from the composition of the first layer E, the substrate W can be appropriately processed according to the substrate processing method.

[0190] The natural frequency JG of the third layer G is different from the natural frequency JE of the first layer E. Even when the natural frequency JG is different from the natural frequency JE, the substrate W can be processed appropriately according to the substrate processing method.

[0191] The processing liquid R includes a cleaning liquid. In the processing liquid supplying step, the recess A is cleaned with the cleaning liquid. Therefore, according to the substrate processing method, the recess A is properly cleaned. For example, according to the substrate processing method, particles are properly removed from the recess A.

[0192] The recess A has a width of, for example, 10 nm or less. That is, the distance D1 is, for example, 10 nm or less. Therefore, the recess A is extremely narrow. Even when the recess A is extremely narrow, the substrate processing method allows the processing liquid R to easily enter and exit the recess A. Therefore, even when the recess A is extremely narrow, the substrate W can be properly processed by the substrate processing method. In fact, when the recess A is extremely narrow, the substrate processing method has a remarkable effect.

[0193] The substrate processing apparatus 1 is for processing a substrate W. The substrate processing apparatus 1 includes a substrate support part 12, a supply part 15a, an oscillator 13, and a control part 10. The substrate support part 12 supports the substrate W. The supply part 15a supplies a processing liquid R to the substrate W supported by the substrate support part 12. The oscillator 13 applies vibration to the substrate W via the substrate support part 12. The vibration is transmitted from the substrate support part 12 to the substrate W. The control part 10 controls the supply part 15a and the oscillator 13.

[0194] The processing liquid supply period P is a period during which the supply unit 15a supplies the processing liquid R to the substrate W supported by the substrate support unit 12. During the processing liquid supply period P, the processing liquid R is present in the recess A.

[0195] The vibration period Q is a period during which the vibrator 13 applies vibration to the substrate W via the substrate support 12. At least a portion of the vibration period Q overlaps with at least a portion of the processing liquid supply period P. Therefore, when the processing liquid R is in the recess A, the vibration is transmitted from the substrate support 12 to the substrate W. The vibration is then transmitted from the substrate W to the processing liquid RA in the recess A. Specifically, the vibration is transmitted from the first layer E, the second layer F, and the third layer G to the processing liquid RA in the recess A. Therefore, it is easy to vibrate the processing liquid RA in the recess A. Therefore, it is easy for the processing liquid R to enter and exit the recess A.

[0196] The vibrator 13 applies vibrations of the natural frequency JE of the first layer E to the substrate W. Therefore, it is easy to vibrate the first layer E at a large amplitude. The vibrator 13 applies vibrations of the natural frequency JF of the second layer F to the substrate W. Therefore, it is easy to vibrate the second layer F at a large amplitude. Therefore, it is even easier to vibrate the processing liquid RA in the recess A. Therefore, it is even easier for the processing liquid R to enter and exit the recess A.

[0197] In summary, the substrate processing apparatus 1 makes it easy to cause the processing liquid R to enter and exit the recess A. Therefore, the substrate processing apparatus 1 allows the substrate W to be processed appropriately.

[0198] As described above, in the substrate processing apparatus 1, it is easy to cause the processing liquid R to enter and exit the recess A. Therefore, the substrates W are processed efficiently in the substrate processing apparatus 1. Therefore, it is easy to shorten the time it takes for the substrate processing apparatus 1 to process the substrates W.

[0199] As described above, the substrates W are efficiently processed in the substrate processing apparatus 1. Therefore, it is easy to reduce the amount of processing liquid R used by the substrate processing apparatus 1 to process the substrates W.

[0200] The vibrator 13 is attached to the substrate support part 12. The vibrator 13 vibrates the substrate support part 12. Therefore, it is easy for the vibrator 13 to apply vibration to the substrate W via the substrate support part 12.

[0201] 2. Second Embodiment A substrate processing apparatus 1 and a substrate processing method according to a second embodiment will be described with reference to the drawings. Note that the same components as those in the first embodiment are designated by the same reference numerals, and detailed description thereof will be omitted.

[0202] 2-1. Overview of the Substrate Processing Apparatus For convenience, reference will be made to Fig. 1. The liquid processing performed by the substrate processing apparatus 1 is, for example, a wet etching process. In the wet etching process, the substrate W is etched with a processing liquid R. The processing liquid R includes, for example, an etching liquid.

[0203] 2-2. Structure of the substrate W Figures 8(a) and 8(b) are detailed views of a portion of the substrate W. Figure 8(a) shows the substrate W before etching. Figure 8(b) shows the substrate W after etching. The second layer F is etched. The second layer F is etched in the depth direction U. As the second layer F is etched, the depth of the recess A increases. As the second layer F is etched, the distance D2 increases.

[0204] The distance D2 before the third layer G is etched is appropriately referred to as "distance D2a." The distance D2 after the third layer G is etched is appropriately referred to as "distance D2b." The distance D2b is greater than the distance D2a. The difference V between the distance D2b and the distance D2a is an example of the etching amount.

[0205] The second layer F is selectively etched. The first layer E is substantially not etched. The first layer E is protected from etching. The third layer G is substantially not etched. The third layer G is protected from etching.

[0206] The first surface E1 is enlarged by etching the second layer F. The area of ​​the first surface E1 is enlarged by etching the second layer F.

[0207] The third surface G1 is enlarged by etching the second layer F. The area of ​​the third surface G1 is enlarged by etching the second layer F.

[0208] For example, distance D2a is smaller than distance D1. For example, distance D2b is larger than distance D1. By etching the second layer F, the first surface E1 changes from a size smaller than the second surface F1 to a size larger than the second surface F1. By etching the second layer F, the third surface G1 changes from a size smaller than the second surface F1 to a size larger than the second surface F1.

[0209] 9 is a diagram showing an example of the configuration of the processing unit 11 according to the second embodiment. The processing unit 11 includes a supply unit 15c in addition to supply units 15a and 15b. The supply unit 15a supplies the processing liquid R to the substrate W. The supply unit 15c also supplies the processing liquid R to the substrate W.

[0210] Hereinafter, the treatment liquid R supplied by the supply unit 15a will be referred to as the "first treatment liquid R1." Hereinafter, the treatment liquid R supplied by the supply unit 15c will be referred to as the "second treatment liquid R2." The treatment liquid R includes the first treatment liquid R1 and the second treatment liquid R2.

[0211] The supply source 19a supplies the first treatment liquid R1 to the supply unit 15a.

[0212] The first processing liquid R1 is, for example, an etching liquid, such as hydrofluoric acid.

[0213] The second treatment liquid R2 is different from the first treatment liquid R1, and has a composition different from the composition of the first treatment liquid R1.

[0214] The second processing liquid R2 is, for example, a cleaning liquid, such as deionized water (DIW).

[0215] The supply unit 15c has a similar structure to the supply unit 15a. The supply unit 15c includes, for example, a nozzle 16c, a pipe 17c, and a valve 18c. The nozzle 16c discharges the second processing liquid R2. The pipe 17c is connected to the nozzle 16c. The valve 18c is provided on the pipe 17c. The valve 18c controls the discharge of the second processing liquid R2 by the nozzle 16c.

[0216] The supply unit 15c is connected to a supply source 19c, which supplies the second treatment liquid R2 to the supply unit 15c.

[0217] Although not shown, the control unit 10 controls the supply unit 15c and the valve 18c.

[0218] The supply units 15a and 15c are examples of the processing liquid supply unit of the present invention.

[0219] 2-4. Procedure of the Substrate Processing Method Figure 10 is a flowchart showing an example of the procedure of the substrate processing method of the second embodiment. The substrate processing method includes a processing liquid supplying step, a vibrating step, and a drying step. First, the processing liquid supplying step is performed. The processing liquid supplying step includes a first processing liquid supplying step and a second processing liquid supplying step. After the processing liquid supplying step, the drying step is performed. The vibrating step is performed in parallel with the processing liquid supplying step. The vibrating step includes a first vibrating step and a second vibrating step.

[0220] The vibration step, the first vibration step, the second vibration step, and the drying step are common to the second embodiment and the first embodiment. Therefore, the treatment liquid supplying step will be described with reference to FIGS.

[0221] Step S1: Processing Liquid Supplying Step In the processing liquid supplying step, the processing liquid R is supplied to the substrate W supported by the substrate support part 12 .

[0222] Step S1A: First Processing Liquid Supply Step In the first processing liquid supply step, the first processing liquid R1 is supplied to the substrate W supported by the substrate support part 12. Specifically, the supply part 15a supplies the first processing liquid R1 to the substrate W supported by the substrate support part 12. The first processing liquid R1 is, for example, an etching liquid. The substrate W is etched with the first processing liquid R1, for example.

[0223] Step S1B: Second Processing Liquid Supply Step After the first processing liquid supply step, the second processing liquid supply step is performed. In the second processing liquid supply step, the second processing liquid R2 is supplied to the substrate W supported by the substrate support part 12. Specifically, the supply part 15c supplies the second processing liquid R2 to the substrate W supported by the substrate support part 12. The second processing liquid R2 is, for example, a cleaning liquid. The substrate W is cleaned with the second processing liquid R2, for example.

[0224] 11 is an example of a timing chart of the processing liquid supplying process and the vibration process of the second embodiment. The processing liquid supplying period P is, for example, a period from time T12 to time T16. The processing liquid supplying period P starts at time T12. The processing liquid supplying period P ends at time T16.

[0225] The processing liquid supply period P includes a first processing liquid supply period P1. The first processing liquid supply period P1 is a period during which the first processing liquid supply step is performed. The first processing liquid supply period P1 is a period during which the supply unit 15a supplies the first processing liquid R1 to the substrate W supported by the substrate support unit 12.

[0226] The first treatment liquid supply period P1 is, for example, a period from time T12 to time T14. The first treatment liquid supply period P1 starts at time T12 and ends at time T14.

[0227] The processing liquid supply period P includes a second processing liquid supply period P2. The second processing liquid supply period P2 is a period during which the second processing liquid supply step is performed. The second processing liquid supply period P2 is a period during which the supply unit 15c supplies the second processing liquid R2 to the substrate W supported by the substrate support unit 12.

[0228] The second treatment liquid supply period P2 follows the first treatment liquid supply period P1.

[0229] The second treatment liquid supply period P2 is, for example, a period from time T14 to time T16. The second treatment liquid supply period P2 starts at time T14 and ends at time T16.

[0230] At time T14, the first treatment liquid supplying process is switched to the second treatment liquid supplying process. Time T14 is the timing at which the first treatment liquid supplying process is switched to the second treatment liquid supplying process.

[0231] The second treatment liquid supply period P2 starts, for example, simultaneously with the end of the first treatment liquid supply period P1. The second treatment liquid supply period P2 does not overlap with the first treatment liquid supply period P1.

[0232] The vibration period Q is, for example, the period from time T11 to time T17. The vibration period Q starts at time T11. The vibration period Q ends at time T17.

[0233] At least a portion of the vibration period Q overlaps with at least a portion of the treatment liquid supply period P. For example, the entire treatment liquid supply period P overlaps with the vibration period Q.

[0234] The start of the vibration period Q is earlier than the start of the treatment liquid supply period P. That is, the vibration period Q starts, and then the treatment liquid supply period P starts.

[0235] The end of the vibration period Q is later than the end of the treatment liquid supply period P. That is, the treatment liquid supply period P ends, and then the vibration period Q ends.

[0236] The length of the vibration period Q is longer than the length of the treatment liquid supply period P.

[0237] The vibration period Q overlaps with time T14. The vibration period Q includes time T14. The vibration period Q overlaps with the timing of switching from the first treatment liquid supply process to the second treatment liquid supply process. Therefore, while the vibration process is being performed, the first treatment liquid supply process is switched to the second treatment liquid supply process.

[0238] The first vibration period Q1 is, for example, the period from time T11 to time T17. The first vibration period Q1 starts at time T11. The first vibration period Q1 ends at time T17.

[0239] The first vibration period Q1 starts earlier than the start of the treatment liquid supply period P. The first vibration period Q1 ends later than the end of the treatment liquid supply period P.

[0240] The first vibration period Q1 overlaps with time T14.

[0241] The second vibration period Q2 is, for example, the period from time T13 to time T15. The second vibration period Q2 starts at time T13. The second vibration period Q2 ends at time T15.

[0242] The second vibration period Q2 starts later than the start of the treatment liquid supply period P. The second vibration period Q2 ends earlier than the end of the treatment liquid supply period P.

[0243] The second vibration period Q2 overlaps with time T14.

[0244] At least a portion of the second vibration period Q2 overlaps with at least a portion of the first vibration period Q1. For example, the entire second vibration period Q2 overlaps with the first vibration period Q1.

[0245] 8(a) and 8(b). The vibration period Q starts, and then the processing liquid supply period P starts. At the start of the processing liquid supply period P, the substrate W is vibrating. At the start of the processing liquid supply period P, the first layer E, the second layer F, and the third layer G are vibrating. At the start of the processing liquid supply period P, the processing liquid R enters the recess A. Therefore, at the start of the processing liquid supply period P, the processing liquid R quickly enters the recess A.

[0246] During the treatment liquid supply period P, the treatment liquid R is present in the recess A.

[0247] During the first processing liquid supply period P1, the first processing liquid R1 is present in the recess A. The first processing liquid R1 is, for example, an etching liquid. Therefore, during the first processing liquid supply period P1, the second layer F is etched by the first processing liquid R1.

[0248] As described above, during the vibration period Q, the vibrations are transmitted from the substrate W to the processing liquid RA in the recess A. Therefore, it is easy to replace the processing liquid RA with the processing liquid RH. For example, it is easy to replace the etching liquid in the recess A with the etching liquid in the external space H. Therefore, the etching rate of the second layer F is unlikely to decrease. For example, it is easy to reduce the difference between the etching rate of the second layer F at the start of the first processing liquid supply period P1 and the etching rate of the second layer F at the end of the first processing liquid supply period P1. The etching rate of the second layer F is the amount of etching of the second layer F per unit time.

[0249] When the second layer F is etched, a product (not shown) may be generated. The product may be generated by a reaction between the second layer F and the first processing liquid R1. As described above, during the vibration period Q, it is easy to replace the processing liquid RA with the processing liquid RH. Therefore, it is easy to remove the product from the recess A.

[0250] 11 . At time T14, the first processing liquid supply period P1 is switched to the second processing liquid supply period P2. At time T14, the first processing liquid supply process is switched to the second processing liquid supply process. At time T14, the processing liquid R is switched from the first processing liquid R1 to the second processing liquid R2. As a result, the first processing liquid R1 on the substrate W is replaced with the second processing liquid R2. The first processing liquid R1 in the recess A is replaced with the second processing liquid R2.

[0251] As described above, the vibration period Q overlaps with time T14. At time T14, the substrate W is vibrating. At time T14, the first layer E, the second layer F, and the third layer G are vibrating. Therefore, the first processing liquid R1 in the recess A is smoothly replaced with the second processing liquid R2. The first processing liquid R1 quickly flows out of the recess A into the external space H. The second processing liquid R2 quickly enters the recess A from the external space H.

[0252] The second processing liquid R2 is, for example, a cleaning liquid. Therefore, during the second processing liquid supply period P2, the recess A is cleaned with the second processing liquid R2. For example, particles are removed from inside the recess A. For example, products are removed from the recess A.

[0253] 2-5. Advantages of the Second Embodiment The second embodiment has advantages similar to those of the first embodiment. Furthermore, the second embodiment has the following advantages.

[0254] The processing liquid R includes a first processing liquid R1 and a second processing liquid R2. The processing liquid supply process includes a first processing liquid supply process and a second processing liquid supply process. In the first processing liquid supply process, the first processing liquid R1 is supplied to the substrate W supported by the substrate support 12. In the first processing liquid supply process, the first processing liquid R1 is present in the recess A. After the first processing liquid supply process, the second processing liquid supply process is performed. In the second processing liquid supply process, the second processing liquid R2 is supplied to the substrate W supported by the substrate support 12. When switching from the first processing liquid supply process to the second processing liquid supply process, the second processing liquid R2 enters the recess A. When switching from the first processing liquid supply process to the second processing liquid supply process, the first processing liquid R1 in the recess A is replaced with the second processing liquid R2. The vibration period Q overlaps with the timing of switching from the first processing liquid supply process to the second processing liquid supply process. Therefore, the first processing liquid R1 in the recess A is efficiently replaced by the second processing liquid R2. The first processing liquid R1 in the recess A is smoothly replaced by the second processing liquid R2. Therefore, the first processing liquid R1 on the substrate W is efficiently replaced by the second processing liquid R2. The first processing liquid R1 on the substrate W is smoothly replaced by the second processing liquid R2.

[0255] The start of the vibration period Q is earlier than the start of the treatment liquid supply period P. Therefore, at the start of the treatment liquid supply period P, the treatment liquid R quickly enters the recess A.

[0256] At least a portion of the second vibration period Q2 overlaps with at least a portion of the first vibration period Q1. Therefore, it is easy to shorten the first vibration period Q1 and the second vibration period Q2 as a whole. For example, it is easy to make the vibration period Q shorter than the sum of the first vibration period Q1 and the second vibration period Q2. Therefore, it is easy to process the substrates W efficiently.

[0257] The processing liquid R includes an etching liquid. Specifically, the first processing liquid R1 is an etching liquid. In the processing liquid supplying step, the second layer F is etched with the etching liquid. Specifically, in the first processing liquid supplying step, the second layer F is etched with the etching liquid. Therefore, according to the substrate processing method, the recess A is appropriately etched.

[0258] The present invention is not limited to the embodiments, and can be modified as follows.

[0259] (1) Whether to perform the first vibration process may be determined based on the sizes of the first surface E1 and the second surface F1. Whether to perform the second vibration process may be determined based on the sizes of the first surface E1 and the second surface F1.

[0260] For example, the first vibration step may be performed when the first surface E1 is larger than the second surface F1. Specifically, the first vibration step may be performed when the first surface E1 has an area larger than the area of ​​the second surface F1. When the first surface E1 is larger than the second surface F1, the contact area between the first surface E1 and the processing liquid R is larger than the contact area between the second surface F1 and the processing liquid R. Therefore, in the first vibration step, the substrate W efficiently transmits vibration to the processing liquid R.

[0261] For example, the second vibration step may be performed when the second surface F1 is larger than the first surface E1. Specifically, the second vibration step may be performed when the second surface F1 has an area larger than the area of ​​the first surface E1. When the second surface F1 is larger than the first surface E1, the contact area between the second surface F1 and the processing liquid R is larger than the contact area between the first surface E1 and the processing liquid R. Therefore, in the second vibration step, the substrate W efficiently transmits vibration to the processing liquid R.

[0262] (2) When the substrate W is etched with the processing liquid R in the processing liquid supply step, the first surface E1 becomes larger as time passes. As the first surface E1 becomes larger, the efficiency of transmission of vibration from the substrate W to the processing liquid R in the first vibration step becomes higher. Therefore, for example, the first vibration period Q1 may overlap with the latter half of the processing liquid supply period P. For example, the first vibration period Q1 may start after the second vibration period Q2 starts. At least a part of the first vibration period Q1 may be after the entire second vibration period Q2.

[0263] (3) The vibration step may include a third vibration step.

[0264] 12 is a flowchart showing an example of the procedure of the substrate processing method of the modified embodiment. Note that the same components as those in the first embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.

[0265] The vibration step includes a third vibration step in addition to the first and second vibration steps. In the third vibration step, vibration of the natural frequency JG of the third layer G is applied to the substrate W. Specifically, the vibrator 13 applies vibration of the natural frequency JG to the substrate W. For example, the vibrator 13 applies vibration of 4.98 kHz to the substrate W.

[0266] FIG. 13 is an example of a timing chart of the processing liquid supplying step and the vibration step in the modified embodiment.

[0267] The treatment liquid supply period P is, for example, the period from time T21 to time T24.

[0268] The vibration period Q is, for example, the period from time T21 to time T24.

[0269] The first vibration period Q1 is, for example, the period from time T21 to time T22.

[0270] The second vibration period Q2 is, for example, the period from time T22 to time T23.

[0271] The vibration period Q includes a third vibration period Q3. The third vibration period Q3 is a period during which the third vibration step is performed. The third vibration period Q3 is a period during which the vibrator 13 applies vibrations of the natural frequency JG to the substrate W.

[0272] The third vibration period Q3 is, for example, the period from time T23 to time T24. The third vibration period Q3 starts at time T23. The third vibration period Q3 ends at time T24.

[0273] At least a portion of the vibration period Q overlaps with at least a portion of the treatment liquid supply period P. For example, the entire vibration period Q overlaps with the treatment liquid supply period P, and the entire treatment liquid supply period P overlaps with the vibration period Q. The vibration period Q coincides with the treatment liquid supply period P. The length of the vibration period Q is equal to the length of the treatment liquid supply period P.

[0274] At least a portion of the third vibration period Q3 overlaps with at least a portion of the treatment liquid supply period P. For example, the entire third vibration period Q3 overlaps with the treatment liquid supply period P.

[0275] For example, the third vibration period Q3 does not overlap with the first vibration period Q1, or at least a portion of the third vibration period Q3 may overlap with at least a portion of the first vibration period Q1.

[0276] For example, the third vibration period Q3 does not overlap with the second vibration period Q2, or at least a portion of the third vibration period Q3 may overlap with at least a portion of the second vibration period Q2.

[0277] According to this modified embodiment, it is easy to vibrate the third layer G greatly in the third vibration step. Therefore, it is even easier to vibrate the treatment liquid RA in the recess A in the third vibration step. Therefore, it is even easier for the treatment liquid R to enter and exit the recess A in the third vibration step.

[0278] (4) The composition of the third layer G may be the same as the composition of the first layer E. Even when the third layer G has the same composition as the first layer E, the substrate W can be appropriately processed according to the substrate processing method.

[0279] (5) The natural frequency JG of the third layer G may be the same as the natural frequency JE of the first layer E. Even when the natural frequency JG is the same as the natural frequency JE, the substrate W is appropriately processed according to the substrate processing method.

[0280] Specifically, when the natural frequency JG is the same as the natural frequency JE, it is easy to greatly vibrate the first layer E and the third layer G in the first vibration step. Therefore, it is even easier to vibrate the treatment liquid RA in the recess A in the first vibration step. Therefore, it is even easier for the treatment liquid R to enter and exit the recess A in the first vibration step.

[0281] (6) The vibrator 13 may be attached to any part of the substrate support 12. For example, the vibrator 13 may be attached to the plate 12a.

[0282] (7) The substrate support 12 may be, for example, a vacuum gripper.

[0283] 14 is a diagram showing the configuration of a processing unit 11 of a modified embodiment. Note that the same components as those in the first embodiment are given the same reference numerals and detailed description thereof will be omitted. The processing unit 11 includes a substrate support 21. The substrate support 21 supports only one substrate W at a time. The substrate support 21 supports the substrate W in a substantially horizontal position. When the substrate W is supported by the substrate support 21, the surface W1 is horizontal.

[0284] When the substrate W is supported by the substrate support 21, the surface W1 faces upward. When the substrate W is supported by the substrate support 21, the surface W1 corresponds to the upper surface of the substrate W. When the substrate W is supported by the substrate support 21, the surface W2 corresponds to the lower surface of the substrate W.

[0285] The substrate support portion 21 sucks the substrate W. Although not shown, the substrate support portion 21 includes a suction port for sucking the substrate W. The substrate support portion 21 sucks the surface W2. The substrate support portion 21 comes into contact with the surface W2.

[0286] The oscillator 13 is attached to the substrate support 21. Vibrations are transmitted from the oscillator 13 to the substrate support 21. The vibrations are transmitted from the substrate support 21 to the substrate W. The vibrations are transmitted from the substrate support 21 to the surface W2. The vibrations are transmitted from the surface W2 to the surface W1. The vibrations are transmitted from the surface W2 to the first layer E, the second layer F, and the third layer G.

[0287] (8) The processing unit 11 may be classified as a batch processing unit, i.e., the processing unit 11 may process a plurality of substrates W at a time.

[0288] Fig. 15 is a front view showing the configuration of a processing unit 11 of the modified embodiment. Fig. 16 is a side view showing the configuration of a processing unit 11 of the modified embodiment. Note that the same components as those in the first embodiment are designated by the same reference numerals, and detailed description thereof will be omitted.

[0289] The processing unit 11 includes a tank 22. The tank 22 stores the processing liquid R.

[0290] The processing unit 11 includes a substrate support 23. The substrate support 23 simultaneously supports a plurality of substrates W. The substrate support 23 supports each substrate W in a substantially vertical position. When the substrate W is supported by the substrate support 23, a plane W1 is vertical.

[0291] The substrate support portion 23 simultaneously comes into contact with the lower portions of the plurality of substrates W. The substrate support portion 23 simultaneously comes into contact with the peripheral edges W3 of the plurality of substrates W.

[0292] For example, the substrate support portion 23 includes one plate 23a and multiple support rods 23b. The plate 23a has a plate shape. The plate 23a extends vertically. Each support rod 23b is supported by the plate 12a. Each support rod 23b extends horizontally from the plate 12a. Each support rod 23b simultaneously contacts the peripheral edges W3 of multiple substrates W. Each support rod 23b simultaneously supports multiple substrates W.

[0293] The processing unit 11 includes a lifting / lowering drive unit 24. The lifting / lowering drive unit 24 is connected to the substrate support unit 23. The lifting / lowering drive unit 24 moves the substrate support unit 23 between an upper position and a lower position. FIG. 16 shows the substrate support unit 23 in the upper position with a dashed line. FIG. 16 shows the substrate support unit 23 in the lower position with a solid line. When the substrate support unit 23 is in the upper position, the multiple substrates W supported by the substrate support unit 23 are positioned above the processing liquid R in the bath 22. When the substrate support unit 23 is in the lower position, the multiple substrates W supported by the substrate support unit 23 are immersed in the processing liquid R in the bath 22. When the substrate support unit 23 is in the lower position, the processing liquid R is supplied to the multiple substrates W supported by the substrate support unit 23. When the substrate support unit 23 is in the lower position, the processing liquid supply process is performed.

[0294] The tank 22 is an example of a processing liquid supply unit in the present invention.

[0295] The vibrator 13 is attached to the substrate support 23. The vibrator 13 is attached to, for example, a support rod 23b. The vibrator 13 may also be attached to a plate 23a.

[0296] The vibrations are transmitted from the vibrator 13 to the substrate support 23. The vibrations are transmitted from the substrate support 23 to the substrate W. The vibrations are transmitted from the substrate support 23 to multiple substrates W simultaneously. The vibrations are transmitted from the substrate support 23 to the peripheral edge W3. The vibrations are transmitted from the substrate support 23 to the peripheral edge W3 of each substrate W simultaneously. The vibrations are transmitted from the peripheral edge W3 to the surface W1. The vibrations are transmitted from the peripheral edge W3 to the first layer E, the second layer F, and the third layer G.

[0297] (9) The processing liquid R in the first embodiment may be an etching liquid.

[0298] (10) The first processing liquid R1 of the second embodiment may be a first cleaning liquid. The second processing liquid R2 of the second embodiment may be a second cleaning liquid. Here, it is preferable that the second cleaning liquid has a composition different from that of the first cleaning liquid.

[0299] (11) The first processing liquid R1 of the second embodiment may be a first etching liquid. The second processing liquid R2 of the second embodiment may be a second etching liquid. Here, it is preferable that the second etching liquid has a composition different from that of the first etching liquid.

[0300] (12) The composition of the first layer E may be changed as appropriate. The first layer E may be made of, for example, at least one of single crystal silicon, polysilicon, amorphous silicon, silicon nitride, silicon oxide, and hafnium oxide.

[0301] (13) The composition of the second layer F may be changed as appropriate. The second layer F may be made of, for example, at least one of silicon oxide, titanium nitride, titanium aluminum nitride, and silicon germanium.

[0302] (14) The composition of the third layer G may be changed as appropriate. The third layer G may be made of, for example, at least one of single crystal silicon, polysilicon, amorphous silicon, silicon nitride, silicon oxide, and hafnium oxide.

[0303] (15) The composition of the cleaning solution may be changed as appropriate. For example, the cleaning solution may contain at least one of deionized water and isopropyl alcohol.

[0304] (16) The composition of the etching solution may be changed as appropriate. The etching solution may include at least one of hydrofluoric acid, dilute hydrofluoric acid (DHF), buffered hydrofluoric acid (BHF), hydrogen peroxide, hydrochloric acid, a mixture of hydrochloric acid and hydrogen peroxide, ammonium hydroxide, a mixture of ammonium hydroxide and hydrogen peroxide, a mixture of hydrofluoric acid, hydrochloric acid, and hydrogen peroxide, a mixture of hydrofluoric acid and nitric acid, phosphoric acid, a mixture of phosphoric acid and nitric acid, a mixture of sulfuric acid and hydrogen peroxide, and tetramethylammonium hydroxide (TMAH). The etching solution may further include an additive. The etching solution may further include a surfactant.

[0305] (17) The substrate processing methods of the first and second embodiments may be applied to the manufacture of various semiconductor products. For example, the substrate processing methods of the first and second embodiments may be applied to the manufacture of a Fin Field-Effect Transistor (FinFET). For example, the substrate processing methods of the first and second embodiments may be applied to the formation of a recess structure. For example, the second layer F may be disposed in a trench. For example, the second layer F may be an isolation film. For example, the second layer F may be an insulator layer.

[0306] (18) The first and second embodiments and the modified embodiments described above in (1) to (17) may be further modified as appropriate by replacing or combining each configuration with the configuration of another modified embodiment.

[0307] REFERENCE SIGNS LIST 1... substrate processing apparatus 10... control unit 11... processing unit 12, 21, 23... substrate support portion 13... oscillator 15a, 15c... supply portion (processing liquid supply portion) 22... tank (processing liquid supply portion) A... recess D1... distance (recess width) D2... distance (recess depth) E... first layer E1... first surface F... second layer F1... second surface G... third layer G1... third surface H... external space (outside recess A) JE... natural frequency of first layer JF... natural frequency of second layer JG... natural frequency of third layer P... processing liquid supply period P1... first processing liquid supply period P2... second processing liquid supply period Q... vibration period Q1... first vibration period Q2... second vibration period Q3... third vibration period R... processing liquid R1: First processing liquid R2: Second processing liquid W: Substrate W1: Surface W2: Surface W3: Peripheral edge

Claims

1. A substrate processing method for processing a substrate, wherein the substrate includes a first layer, a second layer, a third layer, and a recess. The second layer is located between the first layer and the third layer. The recess is formed by the second layer being recessed with respect to the first layer and the third layer. The composition of the second layer is different from the composition of the first layer, and the composition of the second layer is different from the composition of the third layer. The substrate processing method includes a processing liquid supply step of supplying a processing liquid to the substrate supported by a substrate support portion, and a vibration step of applying vibration to the substrate via the substrate support portion. During a processing liquid supply period in which the processing liquid supply step is executed, the processing liquid enters the recess. At least a part of a vibration period in which the vibration step is executed overlaps at least a part of the processing liquid supply period. The vibration step includes a first vibration step of applying vibration having a natural frequency of the first layer to the substrate, and a second vibration step of applying vibration having a natural frequency of the second layer to the substrate. Substrate processing method.

2. The substrate processing method according to claim 1, wherein during the processing liquid supply period, at least a part of the first layer is in contact with the processing liquid, and at least a part of the second layer is in contact with the processing liquid. Substrate processing method.

3. The substrate processing method according to claim 1, wherein the start of the vibration period is later than the start of the processing liquid supply period. Substrate processing method.

4. The substrate processing method according to claim 1, wherein the processing liquid includes a first processing liquid and a second processing liquid. The processing liquid supply step includes a first processing liquid supply step of supplying the first processing liquid to the substrate supported by the substrate support portion, and a second processing liquid supply step of supplying the second processing liquid to the substrate supported by the substrate support portion after the first processing liquid supply step. The vibration period overlaps with the timing of switching from the first processing liquid supply step to the second processing liquid supply step. Substrate processing method.

5. The substrate processing method according to claim 1, wherein at least a part of a first vibration period in which the first vibration step is executed overlaps at least a part of the processing liquid supply period, and at least a part of a second vibration period in which the second vibration step is executed overlaps at least a part of the processing liquid supply period. Substrate processing method.

6. The substrate processing method according to claim 5, wherein the second vibration period does not overlap with the first vibration period.

7. The substrate processing method according to claim 5, wherein at least a part of the second vibration period overlaps with at least a part of the first vibration period.

8. The substrate processing method according to claim 5, wherein the second vibration period starts, and then the first vibration period starts.

9. The substrate processing method according to claim 1, wherein the first layer includes a first surface, the second layer includes a second surface, the third layer includes a third surface, the recess is defined by the first surface, the second surface, and the third surface, and in the treatment liquid supply period, the treatment liquid contacts the first surface, the second surface, and the third surface.

10. The substrate processing method according to claim 9, wherein when the first surface is larger than the second surface, the first vibration step is executed, and when the second surface is larger than the first surface, the second vibration step is executed.

11. The substrate processing method according to claim 1, wherein the composition of the third layer is the same as the composition of the first layer.

12. The substrate processing method according to claim 1, wherein the composition of the third layer is different from the composition of the first layer.

13. The substrate processing method according to claim 1, wherein the vibration step includes a third vibration step of applying vibration at the natural vibration frequency of the third layer to the substrate.

14. The substrate processing method according to claim 1, wherein the treatment liquid includes an etching liquid, and in the treatment liquid supply step, the second layer is etched with the etching liquid.

15. The substrate processing method according to claim 1, wherein the treatment liquid includes a cleaning liquid, and in the treatment liquid supply step, the recess is cleaned with the cleaning liquid.

16. The substrate processing method according to claim 1, wherein the recess has a width of 10 nm or less.

17. A substrate processing apparatus, wherein the substrate includes a first layer, a second layer, a third layer, and a recess, the second layer is located between the first layer and the third layer, the recess is formed by the second layer being recessed with respect to the first layer and the third layer, the composition of the second layer is different from the composition of the first layer, the composition of the second layer is different from the composition of the third layer, the substrate processing apparatus includes a substrate support portion that supports the substrate, a processing liquid supply portion that supplies a processing liquid to the substrate supported by the substrate support portion, a vibrator that applies vibration to the substrate via the substrate support portion, and a control portion that controls the processing liquid supply portion and the vibrator. During a processing liquid supply period in which the processing liquid supply portion supplies the processing liquid to the substrate supported by the substrate support portion, the processing liquid enters the recess, and at least a part of a vibration period in which the vibrator applies vibration to the substrate via the substrate support portion overlaps with at least a part of the processing liquid supply period. The vibrator applies vibration having a natural frequency of the first layer to the substrate and applies vibration having a natural frequency of the second layer to the substrate. A substrate processing apparatus.

18. The substrate processing apparatus according to claim 17, wherein the vibrator is attached to the substrate support portion and vibrates the substrate support portion.

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