Cleaning agent composition for flux residue removal

A cleaning agent composition with specific organic solvents, imidazole compounds, and carboxylic acids effectively removes flux residues and discolored metal oxides at high temperatures, addressing the inefficiencies of existing agents and enhancing semiconductor device manufacturing.

WO2025143112A1PCT designated stage expired Publication Date: 2025-07-03KAO CORP
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Patent Information

Application Number
PCT/JP2024/046140
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-12-25
Filing Date
2024-12-26
Publication Date
2025-07-03

AI Technical Summary

Technical Problem

Existing cleaning agents are inadequate for effectively removing flux residues and discolored metal oxides at high temperatures, leading to potential damage to apparatus and substrate members during the sintering process in electronic substrate manufacturing.

Method used

A cleaning agent composition comprising specific organic solvents, imidazole compounds, carboxylic acids, and water, which enhances the removability of both flux residues and discolored metal oxides at temperatures above 200°C, while minimizing damage to metal members.

Benefits of technology

The composition efficiently removes flux residues and discolored metal oxides, reducing damage to apparatus and substrate members, thereby improving the manufacturing process efficiency and reliability of semiconductor devices.

✦ Generated by Eureka AI based on patent content.

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Abstract

Provided in one embodiment is a cleaning agent composition for flux residue removal that has excellent properties for removing both discolored metal and flux residue after a heat treatment of 200°C or higher. In one embodiment, the present disclosure relates to a cleaning agent composition for flux residue removal, said cleaning agent composition comprising: an organic solvent (component A) that is at least one compound selected from among compounds represented by formula (I) and compound represented by formula (II); an imidazole compound (component B) represented by formula (III); carboxylic acid (component C); and water (component D). Formula (I): R1-O-(AO)n-R2 Formula (II): R3-CH2OH
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Description

Cleaning composition for removing flux residue

[0001] The present disclosure relates to a cleaning composition for removing flux residue and a cleaning method using the cleaning composition.

[0002] 2. Description of the Related Art In order to reduce manufacturing costs, metals such as copper and copper alloys are used for electrodes forming circuits on electronic substrates such as semiconductor packages.

[0003] Surface mounting, which improves mounting density, is widely used as a mounting method for printed wiring boards. To improve mounting density, a known technique involves applying a nanometal paste between the wiring on the board and the terminals of the electronic device, melting and solidifying the nanometal by heating, and bonding the wiring on the board and the terminals of the electronic device.

[0004] Meanwhile, technologies for cleaning solder flux from electronic components after soldering are known. For example, International Publication No. 2020 / 116524 (Patent Document 1) proposes a cleaning composition for removing flux residue, which contains a solvent, an amine with a polarity term δp of the Hansen solubility parameter of 7.8 or less, and a specific diphosphonic acid. International Publication No. 2020 / 116534 (Patent Document 2) proposes a cleaning method including a step of cleaning an object having flux residue with a cleaning composition, the cleaning composition containing an organic solvent and a compound having an alkyl group having 1 to 4 carbon atoms on the nitrogen atom of the imidazole ring or piperazine ring. Japanese Patent Laid-Open Publication No. 7-179893 (Patent Document 3) proposes a cleaning composition containing N-methyl-2-pyrrolidone containing 0 to 30 wt% water and one or more compounds selected from phosphines, phenols, imidazolidones, imidazoles, and fluorenes. Japanese Patent Laid-Open Publication No. 2015-203047 (Patent Document 4) proposes a cleaning composition liquid having a pH of 8 or higher for cleaning a semiconductor device substrate having Cu wiring and a low-dielectric-constant insulating film on the substrate surface and having been subjected to chemical mechanical polishing, the cleaning liquid containing tetramethylammonium hydroxide, a diamine selected from ethylenediamine and 1,2-diaminopropane, an organic acid selected from oxalic acid, citric acid, tartaric acid, malic acid, and picolinic acid, histidine or a derivative thereof, at least one selected from benzotriazole, imidazole, triazole, tetrazole, and a derivative thereof, and water. Japanese Patent Laid-Open Publication No. 2023-14099 (Patent Document 5) proposes a cleaning composition containing about 0.5 to 20 wt% hydroxylamine, about 0.01 to 1 wt% of a chelating agent containing at least two nitrogen-containing groups, an alkylene glycol, and water, wherein the pH of the composition is about 7.5 to 11, and the composition is configured to remove residues from a semiconductor substrate, the semiconductor substrate including a cobalt-containing interconnect. Japanese Patent Laid-Open Publication No. 2021-102773 (Patent Document 6) proposes a cleaning composition containing hydroxylamine, an alkanolamine, an alkylene glycol, and water, and having a pH of 7 to 11.

[0005] In one aspect, the present disclosure relates to a cleaning composition for removing flux residue, comprising at least one organic solvent (component A) selected from a compound represented by the following formula (I) and a compound represented by the following formula (II), an imidazole compound (component B) represented by the following formula (III), a carboxylic acid (component C), and water (component D). 1 -O-(AO) n -R 2 (I) In the above formula (I), R 1 is a phenyl group or an alkyl group having 1 to 8 carbon atoms, and R 2 is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, AO is an ethylene oxide group or a propylene oxide group, and n is the number of moles of AO added, which is an integer of 1 to 3. 3 —CHOH (II) In the above formula (II), R 3 is a phenyl group, a benzyl group, a cyclohexyl group, a furyl group, a tetrahydrofuryl group, a furfuryl group, or a tetrahydrofurfuryl group. In formula (III), R 4 , R 5 , R 6 and R 7 each independently represents a hydrogen atom, a halogen atom, a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a phenyl group, an aldehyde group, a carboxy group, an aminoethyl group, an aminopropyl group, an acetyl group, a hydroxyethyl group, or a hydroxypropyl group.

[0006] In one aspect, the present disclosure relates to a cleaning method including a cleaning step of cleaning an object having flux residue with the cleaning composition for removing flux residue of the present disclosure, wherein the object is a substrate that has been subjected to a step of heating to 200°C or higher.

[0007] When applying a nanometal paste containing an acid (flux component) and then melting and solidifying the nanometal by heating to bond the wiring on a substrate to the terminals of an electronic element, a process is required in which the substrate is held at a high temperature of 200°C or higher to melt the metal. If any acid-based flux residue remains on the substrate after this process, it must be cleaned. Furthermore, depending on the type of metal on the substrate surface or metal component, holding the surface at a high temperature of 200°C or higher may oxidize and discolor the surface. Therefore, there is a need for a cleaning composition that can remove discolored areas caused by heat treatment at 200°C or higher, i.e., oxidized metal (metal oxide).

[0008] Therefore, the present disclosure provides a cleaning composition for removing flux residue, which is excellent in removing both discolored metal and flux residue after heat treatment at 200°C or higher, and a cleaning method.

[0009] The present inventors have found that the use of a combination of at least one organic solvent (component A) selected from the compounds represented by formula (I) and formula (II), an imidazole compound (component B) represented by formula (III), a carboxylic acid (component C), and water (component D) can improve the removability of both discolored metal (metal oxide) and flux residue after heat treatment at 200° C. or higher. Furthermore, the present inventors have found that the use of a carboxylic acid having 8 or more carbon atoms as component C can reduce damage to other components such as components of the equipment (e.g., iron components such as a cleaning tank, cleaning piping, and nozzles) and components attached to the substrate (e.g., iron components such as a cover).

[0010] That is, in one aspect, the present disclosure relates to a cleaning composition for removing flux residue remaining after joining two members by a sintering process, the cleaning composition including at least one organic solvent (component A) selected from the compounds represented by formula (I) and (II), an imidazole compound (component B) represented by formula (III), a carboxylic acid (component C), and water (component D) (hereinafter also referred to as the "cleaning composition of the present disclosure").

[0011] The present disclosure can provide a cleaning composition for removing flux residue that is excellent in removing both discolored metal (metal oxide) and flux residue after heat treatment at 200° C. or higher. In one or more embodiments, the present disclosure can also provide a cleaning composition for removing flux residue that can reduce damage to other members such as iron members.

[0012] Although the details of the mechanism of action by which the effects of the present disclosure are realized are partially unclear, it is speculated as follows. In the cleaning composition of the present disclosure, a specific imidazole compound (Component B) adsorbs to discolored metals (e.g., metal oxides such as copper oxide) to form an imidazole compound-metal complex (e.g., an imidazole compound-copper complex). Complexes such as imidazole compound-copper complexes have low affinity with common organic solvents, preventing diffusion from the surface of metal oxides such as copper oxide, and thus preventing complete removal of metal oxides such as copper oxide. However, in the present disclosure, a specific organic solvent (Component A) solvates complexes such as imidazole compound-copper complexes to form clusters with high affinity, resulting in diffusion into the specific organic solvent (Component A). This effect is thought to promote the dissolution reaction of metal oxides and complete removal of metal oxides such as copper oxide. Furthermore, with regard to flux residue removability, it is thought that the neutralization reaction between rosin acid contained in the flux residue and the imidazole compound enhances the solubility of the flux residue. Furthermore, the cleaning composition of the present disclosure contains a carboxylic acid (component C), which forms a carboxylic acid-imidazole compound complex, which is believed to enhance solvent versatility and accelerate diffusion, thereby accelerating metal oxide removal. Furthermore, the use of a carboxylic acid with 8 or more carbon atoms is believed to result in selective adsorption to metal species, reducing damage to other components. Furthermore, the present disclosure also believes that the use of a specific organic solvent (component A) in the presence of a specific imidazole compound (component B) and a carboxylic acid (component C) further improves the solubility of flux residue, enabling successful cleaning (removal) of the flux residue. Based on the above, the cleaning composition of the present disclosure is believed to exhibit good flux residue removal properties and discolored metal (metal oxide) removal properties. Furthermore, it is believed to reduce damage to other components, such as equipment components (e.g., iron components such as cleaning tanks, cleaning piping, and nozzles) and components attached to substrates (e.g., iron components such as covers). However, the present disclosure need not be interpreted as being limited to this mechanism.

[0013] In one or more embodiments, the term "flux" used in the present disclosure refers to a flux used to bond two components together through a sintering process (e.g., a process of maintaining a high temperature of 200°C or higher), for example, to bond a heat sink to a semiconductor element or a heat sink to a substrate. In one or more embodiments, the flux is a bonding aid whose main component is acid. In the present disclosure, "flux residue" refers to flux-derived residue remaining on a substrate after solder bumps have been formed using the flux and / or on a substrate after soldering using the flux. For example, when other components (e.g., semiconductor chips, chip-type capacitors, other circuit boards, etc.) are stacked and mounted on a circuit board, a space (gap) is formed between the circuit board and the other components. The flux used for the mounting may also remain in this gap as flux residue after soldering by reflow or the like. In one or more embodiments, the "cleaning composition for removing flux residue" in the present disclosure refers to a cleaning composition for removing flux residue remaining after two members are joined by a sintering step.

[0014] [Component A: Organic Solvent] The cleaning composition of the present disclosure contains at least one organic solvent (hereinafter also referred to as "Component A") selected from the compounds represented by the following formula (I) and the compounds represented by the following formula (II), and the organic solvent may be one type or a combination of two or more types.

[0015] <Compound represented by formula (I)> R 1 -O-(AO) n -R 2 (I) In the above formula (I), R 1 R is a phenyl group or an alkyl group having 1 to 8 carbon atoms, and from the viewpoint of improving flux residue removability, a phenyl group or an alkyl group having 4 to 6 carbon atoms is preferred, and an alkyl group having 4 to 6 carbon atoms is more preferred. 2is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, preferably a hydrogen atom from the viewpoint of ease of rinsing, and is preferably an alkyl group having 2 to 4 carbon atoms, more preferably an n-butyl group, from the viewpoint of improving flux residue removability. AO is an ethyleneoxy group (EO) or a propyleneoxy group (PO), and is preferably an ethyleneoxy group from the same viewpoint. n is the number of moles of AO added and represents an integer of 1 to 3, and is preferably 1 or 2, more preferably 2, from the same viewpoint.

[0016] Examples of the compound represented by formula (I) include monophenyl glycol ethers such as ethylene glycol monophenyl ether (PHG-S, 2-phenoxyethanol), diethylene glycol monophenyl ether, and propylene glycol monophenyl ether; monobenzyl glycol ethers such as ethylene glycol monobenzyl ether, diethylene glycol monobenzyl ether, and propylene glycol monobenzyl ether; monoalkyl ethers having an alkyl group of 1 to 8 carbon atoms, such as ethylene glycol monoalkyl ether, diethylene glycol monoalkyl ether, and triethylene glycol monoalkyl ether; dialkyl ethers having an alkyl group having 1 to 8 carbon atoms and an alkyl group having 1 to 4 carbon atoms, such as ethylene glycol dialkyl ether, diethylene glycol dialkyl ether, and triethylene glycol dialkyl ether; phenyl alkyl ethers having a phenyl group and an alkyl group having 1 to 4 carbon atoms, such as ethylene glycol phenyl alkyl ether, diethylene glycol phenyl alkyl ether, and triethylene glycol phenyl alkyl ether; and the like. Among these, from the viewpoint of improving flux residue removability, the compound represented by the above formula (I) is preferably at least one selected from ethylene glycol monophenyl ether (PHG-S), diethylene glycol monobutyl ether (BDG), dipropylene glycol monobutyl ether (BFDG), diethylene glycol dibutyl ether (DBDG) and diethylene glycol diethyl ether, and more preferably diethylene glycol monobutyl ether (BDG).

[0017] <Compound represented by formula (II)> R 3 —CHOH (II) In the above formula (II), R 3 is a phenyl group, a benzyl group, a cyclohexyl group, a furyl group, a tetrahydrofuryl group, a furfuryl group, or a tetrahydrofurfuryl group, and from the viewpoint of improving flux residue removability, a phenyl group, a cyclohexyl group, or a tetrahydrofuryl group is preferred, and a phenyl group or a tetrahydrofuryl group is more preferred.

[0018] Examples of the compound represented by formula (II) include at least one selected from benzyl alcohol, phenethyl alcohol, cyclohexanemethanol, furfuryl alcohol, and tetrahydrofurfuryl alcohol. From the viewpoint of improving flux residue removability, the compound represented by formula (II) is preferably at least one selected from benzyl alcohol, furfuryl alcohol, and tetrahydrofurfuryl alcohol, and more preferably at least one selected from benzyl alcohol (BzOH) and tetrahydrofurfuryl alcohol.

[0019] The content of Component A during use of the cleaning composition of the present disclosure is preferably 10% by mass or more, more preferably 20% by mass or more, even more preferably more than 25% by mass, and even more preferably 40% by mass or more, from the viewpoint of improving the removability of discolored metals; and from the viewpoint of improving the metal solubility of Component B, it is preferably 90% by mass or less, more preferably 85% by mass or less, and even more preferably 80% by mass or less. More specifically, the content of Component A during use of the cleaning composition of the present disclosure is preferably 10% by mass or more and 90% by mass or less, more preferably 20% by mass or more and 85% by mass or less, even more preferably more than 25% by mass or more and 80% by mass or less, and even more preferably 40% by mass or more and 80% by mass or less. When Component A is a combination of two or more types, the content of Component A refers to the total content thereof.

[0020] [Component B: Imidazole Compound Represented by Formula (III)] The imidazole compound represented by the following formula (III) (hereinafter also referred to as "Component B") contained in the cleaning composition of the present disclosure may be one type, or two or more types may be combined.

[0021] In the above formula (III), R 4 , R 5 , R 6 and R 7 each independently represents a hydrogen atom, a halogen atom, a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a phenyl group, an aldehyde group, a carboxy group, an aminoethyl group, an aminopropyl group, an acetyl group, a hydroxyethyl group, or a hydroxypropyl group. 4 , R 5 , R 6 and R 7 are each independently preferably a hydrogen atom, a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a phenyl group, an aminoethyl group, an aminopropyl group, an acetyl group, a hydroxyethyl group, or a hydroxypropyl group, more preferably a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, or a hydroxyethyl group, and even more preferably a methyl group or an ethyl group, from the viewpoint of improving the removability of discolored metal.

[0022] From the viewpoint of improving the removability of both discolored metal and flux residue, component B may be at least one selected from imidazole, 1-methylimidazole, 1-ethylimidazole, 1-propylimidazole, 1-isopropylimidazole, 1-acetylimidazole, 1-aminopropylimidazole, 1-hydroxyethylimidazole, 2-methylimidazole, 2-ethylimidazole, 2-propylimidazole, 2-isopropylimidazole, 2-acetylimidazole, 2-aminopropylimidazole, 2-hydroxyethylimidazole, 4-methylimidazole, 4-ethylimidazole, 4-propylimidazole, 4-isopropylimidazole, 4-acetylimidazole, 4-aminopropylimidazole, 4-hydroxyethylimidazole, 1,2-dimethylimidazole, 1-isobutyl-2-methylimidazole, and 2-ethyl-4-methylimidazole. Among these, from the same viewpoint, Component B is preferably at least one selected from 1-methylimidazole, 2-methylimidazole, 1-isobutyl-2-methylimidazole, and 2-ethyl-4-methylimidazole.

[0023] From the viewpoint of improving the removability of both discolored metal and flux residue, the content of component B when using the cleaning composition of the present disclosure is preferably 0.5% by mass or more, preferably 0.75% by mass or more, more preferably 1% by mass or more, and from the same viewpoint, preferably 15% by mass or less, more preferably 10% by mass or less, and more preferably 8% by mass or less. More specifically, the content of component B when using the cleaning composition of the present disclosure is preferably 0.5% by mass or more and 15% by mass or less, even more preferably 0.75% by mass or more and 10% by mass or less, and even more preferably 1% by mass or more and 10% by mass or less. Furthermore, more specifically, the content of component B when using the cleaning composition of the present disclosure is preferably 0.75% by mass or more and 8% by mass or less, even more preferably 1% by mass or more and 8% by mass or less. When two or more types of component B are used in combination, the content of component B refers to the total content of those components.

[0024] In the cleaning composition of the present disclosure, the mass ratio of Component B to Component A (B / A) (content (mass%) of Component B / content (mass%) of Component A) is preferably 0.005 or more, more preferably 0.008 or more, even more preferably 0.01 or more, still more preferably 0.03 or more, and still more preferably 0.05 or more, from the viewpoint of improving the removability of tarnished metals, and from the same viewpoint, is preferably 1.0 or less, more preferably 0.5 or less, even more preferably 0.3 or less, still more preferably 0.2 or less, and still more preferably 0.1 or less. More specifically, the mass ratio (B / A) is preferably 0.005 or more and 1.0 or less, more preferably 0.008 or more and 0.5 or less, more preferably 0.01 or more and 0.3 or less, 0.03 or more and 0.2 or less, or still more preferably 0.01 or more and 0.1 or less.

[0025] [Component C: Carboxylic Acid] The carboxylic acid (hereinafter also referred to as "Component C") contained in the cleaning composition of the present disclosure may be one type, or two or more types may be combined.

[0026] The number of carbon atoms in component C is preferably 2 or more from the viewpoint of improving the removability of both tarnished metal and flux residue, and preferably 8 or more from the viewpoint of reducing damage to other components such as iron members, and from the viewpoint of improving the removability of both tarnished metal and flux residue and reducing damage to other components such as iron members, it is preferably 22 or less, more preferably 18 or less, and even more preferably 16 or less. More specifically, the number of carbon atoms in component C is preferably 2 or more and 22 or less, or preferably 8 or more and 22 or less, more preferably 8 or more and 18 or less, and even more preferably 8 or more and 16 or less.

[0027] From the viewpoint of improving the removability of both discolored metal and flux residue, and from the viewpoint of reducing damage to other components such as iron components, Component C is preferably a carboxylic acid having 8 or more carbon atoms, such as at least one selected from caprylic acid, capric acid, dodecanedioic acid, lauric acid, myristic acid, palmitic acid, oleic acid, stearic acid, and behenic acid.

[0028] The content of component C during use of the cleaning composition of the present disclosure is preferably 0.5% by mass or more, more preferably 3.5% by mass or more, from the viewpoint of improving the removability of both discolored metal and flux residue, and from the same viewpoint, is preferably 10% by mass or less, more preferably 5% by mass or less. More specifically, the content of component C during use of the cleaning composition of the present disclosure is preferably 0.5% by mass or more and 10% by mass or less, more preferably 3.5% by mass or more and 5% by mass or less. When component C is a combination of two or more types, the content of component C refers to the total content thereof.

[0029] In the cleaning composition of the present disclosure, the mass ratio of Component C to Component A (C / A) (content (mass%) of Component C / content (mass%) of Component A) is preferably 0.0001 or more, more preferably 0.005 or more, and even more preferably 0.01 or more, from the viewpoint of improving the removability of tarnished metals, and from the same viewpoint, is preferably 1.0 or less, more preferably 0.5 or less, even more preferably 0.1 or less, and even more preferably 0.05 or less. More specifically, the mass ratio of Component C to Component A (C / A) is preferably 0.0001 or more and 1.0 or less, more preferably 0.005 or more and 0.5 or less, more preferably 0.01 or more and 0.1 or less, and even more preferably 0.01 or more and 0.05 or less.

[0030] The mass ratio of component B to component C (B / C) (content (mass%) of component B / content (mass%) of component C) in the cleaning composition of the present disclosure is preferably 0.01 or more, more preferably 0.1 or more, and even more preferably 0.5 or more, from the viewpoint of improving the removability of tarnished metals, and from the same viewpoint, is preferably 25 or less, more preferably 15 or less, even more preferably 5 or less, and even more preferably 2 or less. More specifically, the mass ratio of component B to component C (B / C) is preferably 0.01 or more and 25 or less, more preferably 0.1 or more and 15 or less, and even more preferably 0.5 or more and 5 or less.

[0031] [Component D: Water] Examples of water (hereinafter also referred to as "Component D") contained in the cleaning composition of the present disclosure include ion-exchanged water, RO water (water treated by a reverse osmosis membrane), distilled water, pure water, and ultrapure water. From the viewpoint of improving removability of discolored metals, the content of Component D when using the cleaning composition of the present disclosure is preferably 0.5% by mass or more, more preferably 5% by mass or more, and from the viewpoint of improving removability of both discolored metals and flux residues, it is preferably 20% by mass or less, even more preferably 10% by mass or less. More specifically, the content of Component D when using the cleaning composition of the present disclosure is preferably 0.5% by mass or more and 20% by mass or less, more preferably 5% by mass or more and 10% by mass or less.

[0032] [Component E: Amine Represented by Formula (IV)] In one or more embodiments, the cleaning composition of the present disclosure may further contain an amine represented by formula (IV) (hereinafter also referred to as "Component E"). Component E may be one type, or two or more types may be combined. In the above formula (IV), R 8 represents a hydrogen atom, an alkyl group, a phenyl group, a benzyl group, a hydroxyethyl group, a hydroxypropyl group, or an aminoethyl group; R 9 represents a hydrogen atom, a hydroxyethyl group, a hydroxypropyl group, or an alkyl group; R 10 represents a hydroxyethyl group, a hydroxypropyl group, or an alkyl group. From the viewpoint of improving the removability of both the discolored metal and the flux residue, the alkyl group may have from 1 to 6 carbon atoms.

[0033] Examples of component E include alkanolamines such as monoethanolamine (MEA), monoisopropanolamine, N-methylmonoethanolamine, N-methylisopropanolamine, N-ethylmonoethanolamine, N-ethylisopropanolamine, diethanolamine, diisopropanolamine, N-dimethylmonoethanolamine, N-dimethylmonoisopropanolamine, N-methyldiethanolamine, N-methyldiisopropanolamine, N-diethylmonoethanolamine, N-diethylmonoisopropanolamine, N-ethyldiethanolamine, N-ethyldiisopropanolamine, N-(β-aminoethyl)ethanolamine, N-(β-aminoethyl)isopropanolamine, N-(β-aminoethyl)diethanolamine, N-(β-aminoethyl)diisopropanolamine, and N,N-dibutylethanolamine (dibutylaminoethanol); and aromatic amines such as dimethylbenzylamine. At least one selected from the group consisting of: Among these, from the viewpoint of improving the removability of both discolored metal and flux residue, Component E is preferably at least one selected from diisopropanolamine and N,N-dibutylethanolamine (dibutylaminoethanol).

[0034] When the cleaning composition of the present disclosure contains component E, the content of component E when the cleaning composition of the present disclosure is used is preferably 0.2 mass % or more, more preferably 0.5 mass % or more, and even more preferably 1 mass % or more, from the viewpoint of improving flux residue removability. From the same viewpoint, it is preferably 15 mass % or less, more preferably 10 mass % or less, and even more preferably 5 mass % or less. More specifically, the content of component E when the cleaning composition of the present disclosure is used is preferably 0.2 mass % or more and 15 mass % or less, more preferably 0.5 mass % or more and 10 mass % or less, and even more preferably 1 mass % or more and 5 mass % or less. When component E is a combination of two or more types, the content of component E refers to the total content of those components.

[0035] [Other Components] The cleaning composition of the present disclosure may contain, as needed, at least one selected from organic solvents other than Component A, basic substances other than Component B, fatty acids other than Component C, chelating agents, rust inhibitors, thickeners, dispersants, pH adjusters, polymeric compounds, surfactants, solubilizers, preservatives, bactericides, antibacterial agents, antifoaming agents, and antioxidants, within the scope that does not impair the effects of the present disclosure.

[0036] In one or more embodiments, the cleaning composition of the present disclosure may be substantially free of diphosphonic acid. For example, the content of diphosphonic acid in the cleaning composition of the present disclosure upon use is preferably less than 0.1% by mass, more preferably 0.01% by mass or less, and even more preferably 0% by mass (i.e., no diphosphonic acid is contained).

[0037] [Method for producing detergent composition] The detergent composition of the present disclosure can be produced, for example, by blending component A, component B, component C, component D, and, as needed, optional components (component E, other components) using a known method. In one or more embodiments, the detergent composition of the present disclosure can be produced by blending at least component A, component B, component C, and component D. Accordingly, in one aspect, the present disclosure relates to a method for producing a detergent composition, the method including a step of blending at least component A, component B, component C, and component D. In the present disclosure, the term "blending" includes mixing component A, component B, component C, component D, and, as needed, optional components (component E, other components) simultaneously or in any order. In the method for producing a detergent composition of the present disclosure, the blended amount of each component can be the same as the content of each component when the detergent composition of the present disclosure is used as described above. In the present disclosure, the "content of each component when the detergent composition is used" refers to the content of each component at the time of cleaning, i.e., at the time when the detergent composition is first used for cleaning.

[0038] [pH of Cleaning Composition] The pH of the cleaning composition of the present disclosure is preferably 5 or more, more preferably 6 or more, from the viewpoint of improving the removability of both metal discoloration and flux residue. From the same viewpoint, it is preferably 12 or less, more preferably 11 or less, and even more preferably 10 or less. More specifically, the pH of the cleaning composition of the present disclosure is preferably 5 or more and 12 or less, more preferably 6 or more and 11 or less, and even more preferably 6 or more and 10 or less. If necessary, the pH can be adjusted using inorganic acids such as nitric acid and sulfuric acid, organic acids such as oxycarboxylic acids, polycarboxylic acids, aminopolycarboxylic acids, and amino acids, as well as metal salts or ammonium salts thereof, ammonia, sodium hydroxide, potassium hydroxide, amines, carboxylic acids (component C), etc. In the present disclosure, the pH of the cleaning composition is the pH at 25°C when the cleaning composition is in use, and can be measured by the method described in the Examples.

[0039] In one or more embodiments, the cleaning composition of the present disclosure is used to clean an object having flux residue, particularly an object having flux residue remaining after joining two components by a sintering process. In one or more embodiments, the cleaning composition of the present disclosure can be used as a cleaning agent for removing flux residue from an object having flux residue. Therefore, in one aspect, the present disclosure relates to the use of a cleaning composition containing Component A, Component B, Component C, and Component D (i.e., the cleaning composition of the present disclosure) as a flux residue cleaning agent. In one or more other embodiments, the cleaning composition of the present disclosure can be used as a remover for removing flux residue from an object having flux residue. Therefore, in another aspect, the present disclosure relates to the use of the cleaning composition of the present disclosure as a flux residue remover.

[0040] [Object to be Cleaned] In one or more embodiments, the object to be cleaned may be a substrate that has undergone a step of heating to 200°C or higher. In one or more embodiments, the substrate may have a metal member containing copper on it. In one or more embodiments, the step of heating to 200°C or higher is a step of maintaining the substrate at a high temperature of 200°C or higher (sintering step). In one or more embodiments, the object to be cleaned may be an object to be cleaned that has flux residue. In one or more embodiments, the object to be cleaned that has flux residue may be a substrate that has undergone a step of applying a flux-containing slurry between a substrate and a metal member or between two metal members on a substrate and then heating to 200°C or higher (sintering step). Therefore, in one aspect, the present disclosure relates to use of a cleaning composition of the present disclosure in cleaning a substrate that has flux residue and has undergone a step of applying a flux-containing slurry between a substrate and a metal member or between two metal members on a substrate and then heating to 200°C or higher (sintering step). In the sintering step, the heating temperature may be, for example, 200°C to 350°C. The heating time may be, for example, 3 minutes to 5 hours. From the viewpoint of exhibiting cleaning properties against thermal denaturation of the flux, the object to be cleaned is preferably heated for 1 hour or more. In one or more embodiments, the substrate surface and / or metal member of the object to be cleaned includes a portion where the metal has discolored due to heating, i.e., a portion where the metal has oxidized (metal oxide). In one or more embodiments, the flux includes an acid as a main component. Examples of the acid include organic acids such as abietic acid. In one or more embodiments, the slurry containing the flux may further include metal particles. The metal particles are preferably metal particles having a sintering temperature (curing temperature) of 300°C or less, such as tin, copper, silver, or a mixed metal thereof. Copper, silver, or a mixed metal thereof is preferred, and silver is more preferred. In one or more embodiments, the metal particles serve as a bonding material capable of bonding a substrate and a metal member or two metal members on a substrate. In one or more embodiments, the flux-containing slurry can be used as a die attach paste.When the flux-containing slurry further contains metal particles, the slurry can be used as a conductive die-attach paste in one or more embodiments. In one or more embodiments, the metal member is fixed on a substrate. In one or more embodiments, the metal of the metal member includes a metal such as copper or iron. Examples of the metal member include a heat sink, an electric circuit, etc. In one or more embodiments, the substrate includes a substrate having a metal surface, such as a copper plate, a steel plate, or a stainless steel plate. In one or more embodiments, the substrate surface and / or the metal member of the object to be cleaned includes copper.

[0041] [Cleaning Method] In one aspect, the present disclosure relates to a cleaning method (hereinafter also referred to as the "cleaning method of the present disclosure") including a cleaning step of cleaning an object having flux residue with the cleaning composition of the present disclosure. Examples of the object include the objects described above. In one or more embodiments, the cleaning step includes contacting the object having flux residue with the cleaning composition of the present disclosure. The cleaning method of the present disclosure can efficiently remove both tarnished metal (metal oxide) and flux residue after high-temperature treatment at 200°C or higher. In one or more embodiments, the cleaning step includes removing the tarnished metal with the cleaning composition of the present disclosure. Thus, in one aspect, the present disclosure relates to use of the cleaning composition of the present disclosure for removing tarnished metal and flux residue. In one or more embodiments, the tarnished metal includes a portion of the metal oxidized by heating (metal oxide). Examples of a method for cleaning an object to be cleaned with the cleaning composition of the present disclosure or a method for contacting the object to be cleaned with the cleaning composition of the present disclosure include a method of immersing the object in a bath of an ultrasonic cleaning device and a method of spraying the cleaning composition in a spray form (shower method). In one or more embodiments, the cleaning composition of the present disclosure can be used for cleaning as is without dilution. In one or more embodiments, the cleaning step is a step of immersing the object to be cleaned in the cleaning composition of the present disclosure. From the viewpoint of improving the removability of both tarnished metal and flux residue, the immersion temperature is preferably 20°C or higher, more preferably 30°C or higher, and even more preferably 40°C or higher. From the viewpoints of handling safety and reducing the load on the equipment, the immersion temperature is preferably 80°C or lower, more preferably 70°C or lower, and even more preferably 60°C or lower. From the same viewpoints, the immersion time is preferably 5 minutes or longer, more preferably 10 minutes or longer, and even more preferably 30 minutes or longer, and is preferably 3 hours or shorter, more preferably 2 hours or shorter, and even more preferably 1 hour or shorter. In one or more embodiments, the cleaning method of the present disclosure preferably includes a step of contacting the object to be cleaned with the cleaning composition, rinsing the object with water and / or an alcohol such as methanol, and drying the object.In the cleaning method of the present disclosure, it is preferable to irradiate the cleaning composition of the present disclosure with ultrasonic waves when the cleaning composition comes into contact with the object to be cleaned, since this makes it easier for the cleaning power of the cleaning composition of the present disclosure to be exerted. It is more preferable that the ultrasonic waves be relatively strong.

[0042] In one or more other embodiments, the cleaning step in the cleaning method of the present disclosure is a step (removal step) of cleaning and removing flux residue from an object to be cleaned with a flux residue remover. The flux residue remover used in the removal step can be the flux residue cleaning remover composition of the present disclosure described above. That is, in one or more embodiments, the cleaning method of the present disclosure is a flux residue cleaning and removal method that includes a step of cleaning and removing flux residue from an object to be cleaned with the deflux remover composition of the present disclosure, and the object to be cleaned is a substrate having flux residue that has been subjected to a step of heating to 200°C or higher (sintering step).

[0043] [Method for Manufacturing Electronic Components] In one aspect, the present disclosure relates to a method for manufacturing electronic components (hereinafter also referred to as the "method for manufacturing electronic components of the present disclosure") using the cleaning method of the present disclosure. In one or more embodiments, the method for manufacturing electronic components of the present disclosure includes a step of applying a flux-containing slurry between a substrate and a metal member or between two metal members on a substrate, followed by heating to 200°C or higher (sintering step), and a step of cleaning the substrate (object to be cleaned) having flux residue after the sintering step using the cleaning composition of the present disclosure or the cleaning method of the present disclosure (cleaning step). In one or more embodiments, the cleaning step includes contacting the object to be cleaned having flux residue with the cleaning composition of the present disclosure. Examples of cleaning methods in the cleaning step include methods similar to the cleaning method of the present disclosure described above. Examples of objects to be cleaned include the objects to be cleaned described above.

[0044] The present disclosure further relates to one or more of the following embodiments: <1> A cleaning composition for removing flux residue, comprising: at least one organic solvent (component A) selected from a compound represented by the following formula (I) and a compound represented by the following formula (II); an imidazole compound (component B) represented by the following formula (III); a carboxylic acid (component C); and water (component D).1 -O-(AO) n -R 2 (I) In the above formula (I), R 1 is a phenyl group or an alkyl group having 1 to 8 carbon atoms, and R 2 is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, AO is an ethylene oxide group or a propylene oxide group, and n is the number of moles of AO added, which is an integer of 1 to 3. 3 —CHOH (II) In the above formula (II), R 3 is a phenyl group, a benzyl group, a cyclohexyl group, a furyl group, a tetrahydrofuryl group, a furfuryl group, or a tetrahydrofurfuryl group. In formula (III), R 4 , R 5 , R 6 and R 7each independently represent a hydrogen atom, a halogen atom, a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a phenyl group, an aldehyde group, a carboxy group, an aminoethyl group, an aminopropyl group, an acetyl group, a hydroxyethyl group, or a hydroxypropyl group. <2> The cleaning composition for removing flux residue according to <1>, wherein the content of Component A is 10% by mass or more and 90% by mass or less, 20% by mass or more and 85% by mass or less, more than 25% by mass and 80% by mass or less, or 40% by mass or more and 80% by mass or less. <3> The cleaning composition for removing flux residue according to <1> or <2>, wherein the content of Component B is 0.5% by mass or more and 15% by mass or less, 0.75% by mass or more and 8% by mass or less, or 1% by mass or more and 8% by mass or less. <4> Component B is imidazole, 1-methylimidazole, 1-ethylimidazole, 1-propylimidazole, 1-isopropylimidazole, 1-acetylimidazole, 1-aminopropylimidazole, 1-hydroxyethylimidazole, 2-methylimidazole, 2-ethylimidazole, 2-propylimidazole, 2-isopropylimidazole, 2-acetylimidazole, 2-aminopropylimidazole, 2-hydroxyethylimidazole <5> The cleaning composition for removing flux residue according to any one of <1> to <4>, wherein Component B is at least one selected from 1-methylimidazole, 2-methylimidazole, 1-isobutyl-2-methylimidazole, and 2-ethyl-4-methylimidazole, and the content of Component A is 20% by mass or more and 85% by mass or more. <6> The cleaning composition for removing flux residue according to any one of <1> to <5>, wherein the content of Component C is 0.5% by mass or more and 10% by mass or less, or 3.5% by mass or more and 5% by mass or less.<7> The cleaning composition for removing flux residue according to any one of <1> to <6>, wherein the mass ratio (C / A) of component C to component A is 0.0001 or more and 1.0 or less, 0.005 or more and 0.5 or less, or 0.01 or more and 0.05 or less. <8> The cleaning composition for removing flux residue according to any one of <1> to <7>, wherein the mass ratio (B / A) of component B to component A is 0.005 or more and 1.0 or less, 0.008 or more and 0.5 or less, 0.01 or more and 0.3 or less, or 0.03 or more and 0.2 or less. <9> The cleaning composition for removing flux residue according to any one of <1> to <8>, wherein component A is at least one selected from ethylene glycol monophenyl ether (PHG-S), diethylene glycol monobutyl ether (BDG), dipropylene glycol monobutyl ether (BFDG), diethylene glycol dibutyl ether (DBDG), and diethylene glycol diethyl ether, component B is at least one selected from 1-methylimidazole, 2-methylimidazole, 1-isobutyl-2-methylimidazole, and 2-ethyl-4-methylimidazole, and the mass ratio of component B to component A (B / A) is 0.005 or more and 1.0 or less. <10> The cleaning composition for removing flux residue according to any one of <1> to <9>, wherein the mass ratio of component B to component C (B / C) is 0.01 or more and 25 or less, 0.1 or more and 15 or less, or 0.5 or more and 5 or less. <11> The cleaning composition for removing flux residue according to any one of <1> to <10>, wherein the content of component D is 0.5% by mass or more and 20% by mass or less, or 5% by mass or more and 10% by mass or less. <12> The cleaning composition for removing flux residue according to any one of <1> to <11>, wherein component C is a carboxylic acid having 8 or more carbon atoms. <13> The cleaning composition for removing flux residue according to any one of <1> to <12>, wherein component C is at least one selected from caprylic acid, capric acid, dodecanedioic acid, lauric acid, myristic acid, palmitic acid, oleic acid, stearic acid, and behenic acid.<14> The cleaning composition for removing flux residue according to any one of <1> to <13>, wherein component A is at least one selected from ethylene glycol monophenyl ether (PHG-S), diethylene glycol monobutyl ether (BDG), dipropylene glycol monobutyl ether (BFDG), diethylene glycol dibutyl ether (DBDG), and diethylene glycol diethyl ether; component C is at least one selected from caprylic acid, capric acid, dodecanedioic acid, lauric acid, myristic acid, palmitic acid, oleic acid, stearic acid, and behenic acid; and the mass ratio of component C to component A (C / A) is 0.0001 or more and 1.0 or less. <15> The cleaning composition for removing flux residue according to any one of <1> to <14>, wherein Component B is one or more selected from 1-methylimidazole, 2-methylimidazole, 1-isobutyl-2-methylimidazole, and 2-ethyl-4-methylimidazole, Component C is at least one selected from caprylic acid, capric acid, dodecanedioic acid, lauric acid, myristic acid, palmitic acid, oleic acid, stearic acid, and behenic acid, and the mass ratio of Component B to Component C (B / C) is 0.01 or more and 25 or less. <16> A cleaning method, comprising a cleaning step of cleaning an object to be cleaned having flux residue with the cleaning composition for removing flux residue according to any one of <1> to <15>, wherein the object to be cleaned is a substrate that has been subjected to a step of heating to 200°C or higher. <17> The cleaning method according to <16>, wherein the object to be cleaned has a metal member containing copper on the substrate. <18> The cleaning method according to <17>, wherein the substrate surface and / or metal member of the object to be cleaned includes an oxidized metal portion.

[0045] The present disclosure will be specifically described below using examples, but the present disclosure is not limited to these examples in any way.

[0046] 1. Preparation of Cleaning Compositions (Examples 1 to 33, Comparative Examples 1 to 5) The components were blended in a 100 mL glass beaker to give the compositions shown in Tables 1-1, 1-2, and 2 below, and mixed under the conditions below to prepare the cleaning compositions of Examples 1 to 33 and Comparative Examples 1 to 5. Unless otherwise specified, the numerical value for each component in the tables indicates the content (mass%) in the prepared cleaning composition. <Mixing Conditions> Liquid temperature: 60°C Stirrer: Magnetic stirrer (50 mm rotor) Rotation speed: 300 rpm Stirring time: 1 hour

[0047] The following components are used in the cleaning composition: (Component A) 2-phenoxyethanol (PHG-S) [ethylene glycol monophenyl ether, manufactured by Tokyo Chemical Industry Co., Ltd.] benzyl alcohol [manufactured by Lanxess AG] butyl carbitol solvent (BDG) [diethylene glycol monobutyl ether, manufactured by Nippon Nyukazai Co., Ltd.] DBDG [diethylene glycol dibutyl ether, manufactured by Nippon Nyukazai Co., Ltd.] BFDG [dipropylene glycol monobutyl ether, manufactured by Nippon Nyukazai Co., Ltd.] tetrahydrofurfuryl alcohol [manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.] (Component B) 2-methylimidazole [manufactured by Tokyo Chemical Industry Co., Ltd.] 2-ethyl-4-methylimidazole [manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.] 1-methylimidazole [manufactured by Tokyo Chemical Industry Co., Ltd.] 1-isobutyl-2-methylimidazole [manufactured by Tokyo Chemical Industry Co., Ltd.] (Component C) caprylic acid [carbon number 8, manufactured by Kao Corporation] capric acid [carbon number 10, manufactured by Kao Corporation] Dodecanedioic acid [C12, manufactured by FUJIFILM Wako Pure Chemical Industries, Ltd.] Lauric acid [C12, manufactured by Kao Corporation] Myristic acid [C14, manufactured by FUJIFILM Wako Pure Chemical Industries, Ltd.] Palmitic acid [C16, manufactured by FUJIFILM Wako Pure Chemical Industries, Ltd.] Oleic acid [C18, manufactured by FUJIFILM Wako Pure Chemical Industries, Ltd.] Stearic acid [C18, manufactured by FUJIFILM Wako Pure Chemical Industries, Ltd.] Behenic acid [C22, manufactured by Kao Corporation] Lactic acid [C2, manufactured by FUJIFILM Wako Pure Chemical Industries, Ltd.] Malonic acid [C3, manufactured by FUJIFILM Wako Pure Chemical Industries, Ltd.] Malic acid [C4, manufactured by FUJIFILM Wako Pure Chemical Industries, Ltd.] (Component D) Water [Pure water of 1 μS / cm or less, produced using a water purification system G-10DSTSET manufactured by Organo Corporation] (Component E) Diisopropanolamine [manufactured by Mitsui Fine Chemicals, Inc.] Dibutylaminoethanol [manufactured by Nippon Nyukazai Co., Ltd.] (inorganic acid) 2M sulfuric acid (17%) [manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.] *Adjusted by diluting the reagent 35% hydrochloric acid (11.3M) [manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.] Note that the content of inorganic acid in the table also includes the content of water in the sulfuric acid or hydrochloric acid aqueous solution.

[0048] [pH Measurement] The pH of each cleaning composition was measured at 25°C, and the electrode of a pH meter (HM-30G, manufactured by Toa Denpa Kogyo Co., Ltd.) was immersed in the cleaning composition and the value was measured 3 minutes later.

[0049] 2. Evaluation of Cleaning Compositions [Evaluation of Oxide Film Removal Speed ​​(Removability of Discolored Metal)] The oxide film removal speed (removability of discolored metal) of the cleaning compositions of Examples 1 to 33 and Comparative Examples 1 to 5 was evaluated as follows. 15 g of each cleaning composition (Examples 1 to 33, Comparative Examples 1 to 5) heated to 60°C was added to 0.3 g of CuO reagent, and the mixture was irradiated with ultrasound (38 kHz, 600 W output) for 6 minutes. This ultrasonic irradiation simulated ultrasonic cleaning of discolored metal (CuO, oxide film) (cleaning time: 6 minutes). The cleaning composition was then filtered through a 0.45 μm filter, and the amount of metal ions dissolved in the cleaning composition (amount of dissolved copper ions, ppm) was determined by ICP measurement. The oxide film removal speed was calculated using the following formula, and the results are shown in Tables 1-1, 1-2, and 2. Oxide film removal speed = amount of dissolved copper ions (ppm) / cleaning time (min)

[0050] [Evaluation of Damage to Iron Components] Using the cleaning compositions of Examples 1, 3, 4, 7-9, and 31-33, damage to iron components used in equipment and substrates was evaluated as follows. 50 g of each cleaning composition heated to 60°C was added to an SPCCB component (20 mm x 50 mm, steel plate specified in JIS G 3141) and stored in a 60°C thermostatic chamber for one week. This model simulates damage to components (here, iron components) used in equipment and substrates. After one week of storage, the cleaning composition was sampled and filtered through a 5-μm filter, and the amount of dissolved metal ions (amount of dissolved iron ions, ppm) was determined by ICP measurement. The results are shown in Tables 1-1 and 2. Damage to Comparative Examples 1-5 was not evaluated due to their slow cleaning speed.

[0051] [Evaluation of Flux Residue Removal] The following cleaning test was performed using the following test substrate to evaluate flux residue removability. <Test Substrate> A test substrate was prepared by applying 0.05 g of abietic acid (flux) to a 50 mm x 20 mm tough pitch copper plate and heating it on a hot plate at 250°C for 1 hour. The abietic acid was present on a portion of the copper plate surface. The test substrate prepared here is a model that simulates the joining of metals on a substrate based on the heating temperature and holding time, and is intended to represent a substrate with flux residue that has undergone a sintering process. <Cleaning Test> A test substrate was immersed in 100 g of each cleaning composition heated to 60°C and ultrasonically cleaned for 15 minutes at 38 kHz and 400 W output. The test substrate was then removed from the cleaning composition, rinsed with water, and dried with an air blower to obtain a cleaned substrate. <Flux Residue Removal Rate> The appearance of the substrate was observed before and after cleaning, and the flux residue removal rate was calculated using the following formula: Flux Residue Removal Rate (%) = Area from which flux residue was removed after cleaning / Area to which flux residue adhered before cleaning × 100 Area from which flux residue was removed after cleaning = (Area to which flux residue adhered before cleaning) - (Area to which flux residue adhered after cleaning) It was confirmed that all of Examples 1 to 33 and Comparative Examples 1 to 5 exhibited flux residue removal rates close to 100%. Therefore, it can be evaluated that the cleaning agent compositions of Examples 1 to 33 and Comparative Examples 1 to 5 have excellent flux residue removal ability.

[0052]

[0053]

[0054]

[0055] As shown in Tables 1-1, 1-2, and 2, the cleaning compositions of Examples 1 to 33 were superior in removing discolored metals (oxide films) compared to Comparative Examples 1 to 5. All of Examples 1 to 33 and Comparative Examples 1 to 5 were superior in removing flux residues. Furthermore, the cleaning compositions of Examples 1, 3, 4, and 7 to 9, which used a carboxylic acid with 8 or more carbon atoms as component C, were found to cause less damage to iron components than Examples 31 to 33, which used a carboxylic acid with 2 to 4 carbon atoms as component C. It is believed that the cleaning compositions of Examples 2, 5, and 6 also caused less damage to iron components.

[0056] The cleaning composition of the present disclosure can efficiently remove both discolored metal and flux residue. This makes it possible, for example, to shorten the flux cleaning step in the semiconductor device manufacturing process and improve the performance and reliability of the manufactured semiconductor device, thereby improving the productivity of semiconductor devices.

Claims

1. A cleaning agent composition for removing flux residues, comprising at least one organic solvent (component A) selected from the compound represented by the following formula (I) and the compound represented by the following formula (II), an imidazole compound (component B) represented by the following formula (III), a carboxylic acid (component C), and water (component D). R 1 -O-(AO) n -R 2 (I) In the above formula (I), R 1 is a phenyl group or an alkyl group having 1 to 8 carbon atoms, R 2 is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, AO is an ethylene oxide group or a propylene oxide group, and n is the number of moles of AO added, which is an integer of 1 or more and 3 or less. R 3 -CH2OH (II) In the above formula (II), R 3 is a phenyl group, a benzyl group, a cyclohexyl group, a furyl group, a tetrahydrofuryl group, a furfuryl group or a tetrahydrofurfuryl group. In formula (III), R 4 , R 5 , R 6 and R 7 each independently represents a hydrogen atom, a halogen atom, a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a phenyl group, an aldehyde group, a carboxy group, an aminoethyl group, an aminopropyl group, an acetyl group, a hydroxyethyl group or a hydroxypropyl group.

2. The cleaning agent composition for removing flux residues according to claim 1, wherein the content of component A is 10% by mass or more and 90% by mass or less.

3. The cleaning agent composition for removing flux residues according to claim 1 or 2, wherein the content of component B is 0.5% by mass or more and 15% by mass or less.

4. Component B is at least one selected from imidazole, 1-methylimidazole, 1-ethylimidazole, 1-propylimidazole, 1-isopropylimidazole, 1-acetylimidazole, 1-aminopropylimidazole, 1-hydroxyethylimidazole, 2-methylimidazole, 2-ethylimidazole, 2-propylimidazole, 2-isopropylimidazole, 2-acetylimidazole, 2-aminopropylimidazole, 2-hydroxyethylimidazole, 4-methylimidazole, 4-ethylimidazole, 4-propylimidazole, 4-isopropylimidazole, 4-acetylimidazole, 4-aminopropylimidazole, 4-hydroxyethylimidazole, 1,2-dimethylimidazole, 1-isobutyl-2-methylimidazole, and 2-ethyl-4-methylimidazole. The cleaning agent composition for removing flux residues according to any one of claims 1 to 3.

5. The cleaning agent composition for removing flux residues according to any one of claims 1 to 4, wherein the content of component C is 0.5% by mass or more and 10% by mass or less.

6. The cleaning agent composition for removing flux residues according to any one of claims 1 to 5, wherein the mass ratio (C / A) of component C to component A is 0.0001 or more.

7. The cleaning agent composition for removing flux residues according to any one of claims 1 to 6, wherein the mass ratio (B / A) of component B to component A is 0.005 or more and 1.0 or less.

8. The cleaning agent composition for removing flux residues according to any one of claims 1 to 7, wherein the mass ratio (B / C) of component B to component C is 0.01 or more and 25 or less.

9. The cleaning agent composition for removing flux residues according to any one of claims 1 to 8, wherein the content of component D is 0.5% by mass or more and 20% by mass or less.

10. The cleaning agent composition for removing flux residues according to any one of claims 1 to 9, wherein component C is a carboxylic acid having 8 or more carbon atoms.

11. A cleaning method comprising a cleaning step of cleaning an object to be cleaned having a flux residue with the cleaning agent composition for removing flux residue according to any one of claims 1 to 10, wherein the object to be cleaned is a substrate that has been subjected to a step of heating to 200°C or higher.

12. The cleaning method according to claim 11, wherein the object to be cleaned has a metal member containing copper on the substrate.

13. The cleaning method according to claim 12, wherein the substrate surface and / or the metal member of the object to be cleaned includes a portion where the metal has been oxidized.

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