Method for machining slot on light-transmitting material, and machining system

Abstract

A method for machining a slot (130) on a light-transmitting material (100), and a machining system. In the method, a laser internal engraving process and a wet etching process are combined. The method comprises the steps of: using a laser internal engraving process to perform laser engraving treatment on an area (110) to be machined of the light-transmitting material (100), such that the surface of at least one side of the light-transmitting material (100) is penetrated; and performing wet etching treatment on a product of the laser engraving treatment.

Description

Method and system for machining slots on light-transmitting material

[0001] This invention claims priority to a Chinese patent application filed with the State Intellectual Property Office on January 10, 2024, with application number 202410032395.7 and application name “A method and processing system for processing slots on light-transmitting materials,” the entire contents of which are incorporated herein by reference. Technical Field

[0002] The present invention relates to the technical field of light-transmitting material processing, and in particular to a method and a processing system for processing slots on light-transmitting materials. Background Art

[0003] The PCB, panel, and semiconductor industries often involve the processing of translucent materials, such as opening holes or trenching in glass, ceramics, and silicon carbide. For creating trenches in translucent, brittle materials, the industry utilizes methods including wet etching and dry etching, such as laser etching.

[0004] The wet etching process includes the following steps: masking - exposure - development - etching with an etchant. The wet etching process has the disadvantages of being complex and tedious. Furthermore, because wet etching involves a chemical reaction between a corrosive solution (etchant) and the material being etched, the reaction occurs in all directions, making it isotropic. This makes it difficult to control the etching direction, making it difficult to achieve ideal vertical surfaces and dimensional accuracy.

[0005] Laser engraving is primarily used for engraving hard materials such as gemstones, crystals, and other translucent materials. This means it's generally used to create holes inside translucent materials, limiting its application. Furthermore, laser engraving suffers from low processing efficiency, microcracks, and the tendency for these cracks to expand over time.

[0006] Summary of the Invention

[0007] The present application provides a method for machining slots on a light-transmitting material, which can improve the machining accuracy and efficiency of the light-transmitting material.

[0008] In a first aspect, the present application provides a method for machining slots in a light-transmitting material, comprising the steps of:

[0009] The laser engraving process is used to perform laser engraving on the area to be processed of the light-transmitting material so that the surface of at least one side of the light-transmitting material is penetrated;

[0010] The laser engraving product is wet-etched to form slots corresponding to the area to be processed.

[0011] In one embodiment, the step of laser engraving the area to be processed of the light-transmitting material using a laser inner engraving process includes:

[0012] Setting a 3D image of the area to be processed of the light-transmitting material, and forming a laser engraving image according to the 3D image;

[0013] A corresponding first laser processing path is generated according to the laser engraving image file, and the light-transmitting material is laser engraved according to the first laser processing path to form a laser blasting area, which at least passes through the surface of one side of the light-transmitting material.

[0014] In one embodiment, before forming the laser engraving image, the method further includes correcting the 3D image to compensate for etching deviation, where the etching deviation is the deviation obtained by laser etching according to the second laser processing path generated by the 3D image file and then based on a wet etching process previously performed on the same type of light-transmitting material.

[0015] In one embodiment, the step of performing laser engraving on the light-transmitting material according to the first laser processing path to form a laser blasting area includes:

[0016] The laser is used to sequentially scan the area to be processed of the light-transmitting material along the first direction, so that the area to be processed of the light-transmitting material forms multiple blasting layers, the multiple blasting layers are arranged along the first direction, and the blasting layers extend along the second direction.

[0017] In one embodiment, the step of sequentially scanning the area to be processed of the light-transmitting material along a first direction using a laser so as to form a plurality of blasting layers in the area to be processed of the light-transmitting material comprises sequentially scanning the area to be processed of the light-transmitting material from an end close to the light-transmitting material processing table to an end far from the light-transmitting material processing table using a laser so as to form a plurality of blasting layers arranged along the first direction in the area to be processed of the light-transmitting material;

[0018] The second direction is perpendicular to the first direction.

[0019] In one embodiment, the blasting layer has a plurality of blasting holes, and before performing the laser engraving process, the method further includes:

[0020] Obtaining a dot matrix diagram of laser blasting points corresponding to the blasting layer;

[0021] The laser engraving process includes performing laser blasting on corresponding positions of the light-transmitting material according to positions of laser blasting points in the dot matrix to form the blasting layer.

[0022] In one embodiment, the distance between two adjacent blasting layers is 0.1 μm to 1000 μm, and / or the distance between two adjacent blasting holes in the same blasting layer is 0.1 μm to 1000 μm.

[0023] In one embodiment, the blasting holes of two adjacent blasting layers are staggered.

[0024] In one embodiment, the diameter of the blasting hole is 0.1 μm to 500 μm.

[0025] In one embodiment, the plurality of blasting layers are arranged at equal intervals along the first direction.

[0026] In one embodiment, the laser wavelength of the laser engraving process is 190 nm to 1100 nm, and / or the output laser spot diameter is 0.1 μm to 500 μm.

[0027] In one embodiment, the 3D image is composed of multiple first dot matrix layers, and the laser engraved image is composed of multiple second dot matrix layers. The first dot matrix layers correspond to the second dot matrix layers one by one, and the area of ​​the second dot matrix layer is 70% to 99% of the area of ​​the corresponding first dot matrix layer.

[0028] In one embodiment, a laser engraving device is used to perform the laser engraving process on the light-transmitting material. During the laser engraving process, the method further includes monitoring the position of the laser beam in real time. When it is detected that the position of the laser beam is inaccurate, the position of the laser beam is corrected by adjusting the height or curvature of the focusing mirror of the laser engraving device.

[0029] In one embodiment, the step of performing a wet etching process on the laser engraving product to form a slot corresponding to the area to be processed includes:

[0030] The surface of the laser blasting area is brought into contact with an etching solution to form a slot corresponding to the area to be processed.

[0031] In one embodiment, the etching solution includes one or more of hydrofluoric acid, ammonium trifluoride, sulfuric acid, sodium sulfate, oxalic acid, nitric acid, phosphoric acid and acetic acid.

[0032] In one embodiment, the slot is in a shape of a rectangle, a hemisphere, a cylinder, an inverted cone, or any other regular or irregular shape.

[0033] In one embodiment, the method is applicable to the processing of any light-transmitting material in the PCB industry, panel industry, and semiconductor industry, and the light-transmitting material includes any one of glass, light-transmitting semiconductor material, and light-transmitting plastic.

[0034] In a second aspect, the present application further proposes a processing system, the processing system comprising a laser engraving device and a wet etching device, and the above-mentioned method is performed based on the processing system;

[0035] Alternatively, the processing system includes a laser engraving device, which is used to perform laser engraving on the light-transmitting material using the method described above, and then wet-etch the light-transmitting material that has been laser-engraved using the method described above by a corresponding wet etching device to form slots corresponding to the area to be processed.

[0036] Alternatively, the processing system includes a wet etching device. After the light-transmitting material is laser engraved by a corresponding laser engraving device using the method described above, the wet etching device is used to wet-etch the light-transmitting material using the method described above to etch and form slots corresponding to the area to be processed.

[0037] Compared with the existing technology, this technical solution has at least the following technical effects:

[0038] The technical solution of this application effectively improves the processing accuracy and efficiency of light-transmitting materials by combining laser inner engraving and wet etching processes. This application breaks through the application limitation of traditional laser inner engraving processes that only process the interior of light-transmitting materials. In the technical solution of this application, the laser inner engraving process is first used to blast the area to be processed of the light-transmitting material from the outside to the inside or from the outside to the inside and then to the outside. In the subsequent wet etching process, since the etching speed of the laser blasting area is much higher than the etching speed of the area of ​​the material not subjected to the laser blasting, a slot is etched in the laser blasting area of ​​the material, that is, a slot is etched in the area to be processed of the material. In terms of processing efficiency, compared with directly using laser or etchant to remove the material in the area to be processed of the transparent material, the wet etching combined with the laser engraving process in this application is more efficient and takes less time. Before etching with the etchant, there is no need to perform masking, exposure, and development steps, and the overall process is short. In terms of processing accuracy, before etching, the laser engraving process is first used to laser blast the area to be processed of the material, which can reduce the etching deviation caused by the isotropy of the etchant etching process to the etched slot, so that the shape of the slot obtained after processing is closer to the theoretical shape, thereby improving the processing accuracy. In addition, single laser processing will cause microcracks in the material, thereby affecting the processing accuracy of the material. In this application, the wet etching process is combined with the laser engraving process to remove the microcracks on the material caused by laser engraving, thereby improving the processing accuracy, reliability and durability of the transparent material. Therefore, the method of the present application takes into account the advantages of high processing efficiency, high processing accuracy, high reliability and high durability.

[0039] The details of one or more embodiments of the disclosure are set forth in the accompanying drawings and the description below, and other features and advantages of the disclosure will be apparent from the description, the drawings, and the claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] FIG1 is a process flow chart of a method for machining slots on a light-transmitting material according to an embodiment of the present application;

[0041] FIG2 is a schematic diagram of a slot structure of a light-transmitting material processed in one embodiment of the present application;

[0042] FIG3 is a schematic diagram of a slot structure of a light-transmitting material processed in another embodiment of the present application;

[0043] FIG4 is a schematic diagram of a processing structure of a light-transmitting material in one embodiment of the present application;

[0044] FIG5 is a schematic flow chart of another embodiment of the method for machining slots on a light-transmitting material according to the present application;

[0045] FIG6 is a schematic flow chart of a method for machining slots on a light-transmitting material according to an embodiment of the present application;

[0046] FIG7 is a schematic diagram of a processing structure of a light-transmitting material in one embodiment of the present application;

[0047] FIG8 is a diagram showing a measurement of machining errors of a slot of a light-transmitting material machined in one embodiment of the present application;

[0048] FIG. 9 is a diagram showing a test of the flatness of the bottom of a slot of a light-transmitting material processed in one embodiment of the present application.

[0049] Reference numerals: DETAILED DESCRIPTION

[0050] In order to better understand the technical solution of the present invention, the embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0051] It should be understood that the embodiments described are only a portion of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative work are within the scope of protection of the present invention.

[0052] The terms used in the embodiments of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The singular forms "a", "an", "the" and "the" used in the embodiments of the present invention and the appended claims are also intended to include plural forms unless the context clearly indicates otherwise.

[0053] It should be understood that the term "and / or" as used herein is merely a description of the relationship between associated objects, indicating that three possible relationships exist. For example, "A and / or B" can represent: A exists alone, A and B exist simultaneously, or B exists alone. Furthermore, the character " / " in this document generally indicates that the associated objects are in an "or" relationship.

[0054] In a first aspect, the present application provides a method for machining slots on a light-transmitting material 100 .

[0055] In an embodiment of the present application, the method combines laser engraving and wet etching processes, and includes the following steps:

[0056] S10. Laser engraving is performed on the light-transmitting material 110 to be processed in the area 110, so that at least one side of the surface of the light-transmitting material 100 is penetrated;

[0057] S20 . Performing a wet etching process on the laser engraving product to form slots corresponding to the area to be processed 110 .

[0058] The principle of the laser engraving process is the interference phenomenon of light. Specifically, two laser beams are injected into a transparent material from different angles and precisely intersect at a single point. Because the two laser beams interfere and cancel each other out at the intersection, their energy is converted from light energy to internal energy, releasing a large amount of heat, melting the point and forming a tiny cavity. This application utilizes a laser engraving process to precisely control the intersection of the two laser beams at different locations, creating a large number of tiny cavities in the to-be-processed area 110 of the transparent material 100. These cavities can significantly increase the contact area between the etching liquid and the to-be-processed area 110 of the transparent material 100, thereby causing the etching rate of the etching liquid in the to-be-processed area 110 of the transparent material 100 to be much higher than the etching rate of other areas of the transparent material 100.

[0059] In the prior art, the laser engraving process is usually used to perform engraving on translucent materials such as crystal to form holes or patterns inside the translucent materials, but is not used in the processing of perforations or blind holes (grooves) in translucent materials. In the embodiment of the present application, by flexibly moving the focal point of the laser spot to the surface position of the material, the laser engraving process can be combined with the wet etching process to achieve precise processing of the grooves of the translucent materials. The entire processing process is short and no microcracks are generated. The processing accuracy is high and can meet the processing needs of various 3D slot structures.

[0060] The technical solution of the present application effectively improves the processing accuracy and processing efficiency of light-transmitting materials by combining laser inner engraving and wet etching processes. The present application breaks through the application limitation of the traditional laser inner engraving process that only processes the interior of light-transmitting materials. In the technical solution of the present application, the laser inner engraving process is first used to perform a blasting process from the surface to the inside or from the surface to the inside and then to the surface on the area 110 to be processed of the light-transmitting material 100. During the subsequent wet etching process, since the etching speed of the laser blasting area 120 is much higher than the etching speed of the material area not subjected to the laser blasting, a slot 130 is etched in the laser blasting area 120 of the material, that is, a slot 130 is etched in the area 110 to be processed of the light-transmitting material 100. In terms of processing efficiency, compared with directly using a laser or an etchant to remove the material in the to-be-processed area 110 of the transparent material 100, the wet etching combined with the laser engraving process in the present application is more efficient and time-consuming. Before the etchant etching, no masking, exposure, or development steps are required, and the overall process steps are short. In terms of processing accuracy, before the etching process, the laser engraving process is first used to laser blast the to-be-processed area 110 of the transparent material 100. This can reduce the etching deviation caused by the isotropy of the etchant etching process on the etched slot, making the shape of the slot obtained after processing closer to the theoretical shape, thereby improving the processing accuracy. In addition, single laser processing will cause microcracks in the material, thereby affecting the processing accuracy of the material. By combining the wet etching process with the laser engraving process, the present application removes the microcracks on the material caused by laser engraving, thereby improving the processing accuracy, reliability, and durability of the transparent material. Therefore, the method of the present application has the advantages of high processing efficiency, high processing accuracy, high reliability, and high durability.

[0061] Referring to FIG. 1 , in more detail, in the embodiment of the present application, the steps of laser engraving the to-be-processed area 110 of the light-transmitting material 100 using the laser inner engraving process include:

[0062] S11. Setting a 3D image of the light-transmitting material 100 to be processed in the region 110, and forming a laser engraving image based on the 3D image;

[0063] S12. Generate a corresponding first laser processing path according to the laser engraving image file, and perform laser engraving on the light-transmitting material according to the first laser processing path to form a laser blasting area 120, wherein the laser blasting area 120 passes through at least one side of the surface of the light-transmitting material 100;

[0064] The step of performing a wet etching process on the laser engraving product to form a slot corresponding to the area to be processed 110 includes:

[0065] S20 . The surface of the laser blasting area 120 is brought into contact with an etching solution to etch and form a slot 130 corresponding to the area to be processed.

[0066] In the embodiments of the present application, the method is applicable to the processing of translucent materials in the PCB, panel, and semiconductor industries. The translucent material 100 may be glass, a translucent semiconductor material, a translucent plastic, or other translucent material. The glass may be silicate glass, borate glass, potassium glass, quartz glass, fluorite, etc. The translucent semiconductor material may be silicon carbide, zinc oxide, gallium nitride, etc.

[0067] In an embodiment of the present application, the etching solution includes one or more of hydrofluoric acid, ammonium trifluoride, sulfuric acid, sodium sulfate, oxalic acid, nitric acid, phosphoric acid, acetic acid, and other commonly used etching solutions in the art; the specific components of the etching solution and the type of the transparent material will affect the etching rate, and those skilled in the art can select an appropriate etchant according to the type of the selected light-transmitting material 100; for example, for glass such as quartz glass, hydrofluoric acid or a mixture of nitric acid and hydrofluoric acid can be used as the etching solution; in some cases, if the etching process is relatively mild or the etching depth is shallow, a mixture of oxalic acid and sodium sulfate can also be used as the etching solution; in addition, a mixture of ammonium trifluoride and sulfuric acid can be added to the etching solution. Ammonium trifluoride and sulfuric acid will form a buffered etching solution, which can maintain the etching rate within a certain range and reduce the risk of over-etching.

[0068] In the embodiment of the present application, in S20, the light-transmitting material 100 may be immersed in the etching solution in its entirety or in part, or the etching solution may be sprayed on the surface of the laser blasting region 120 of the light-transmitting material 100, as long as the surface of the laser blasting region 120 can be continuously in contact with the etching solution and reacted until a slot corresponding to the area to be processed 110 is formed by etching.

[0069] Please refer to Figures 2 and 3. The shape of the slot 130 can be a rectangle, a hemisphere, a cylinder, an inverted cone, or any other regular or irregular shape. That is, the technical solution of the present application is applicable to opening various slots on the light-transmitting material 100, and those skilled in the art can make arrangements according to their needs.

[0070] In the embodiment of the present application, since wet etching is used during the processing, some portions wider or narrower than the target etching width may be generated during the etching process, resulting in a slight deviation in the size or shape of the final etched slot from the preset etching size or shape. For example, as shown in FIG4 , when a rectangular slot needs to be etched at the upper end of the light-transmitting material 100, if a laser processing path is generated directly based on the image file of the rectangular slot (corresponding to the 3D image file of the area to be processed 110) for laser etching, then due to the isotropic nature of wet etching, in the later wet etching process, the etchant will not only dissolve the material in the vertical direction, but also dissolve the side of the material, so that the actual width of the final etched slot 130 will be wider than the target width. Moreover, since the portion closer to the upper end is in contact with the etching solution for a longer time, the closer the slot 130 is to the upper end of the slot, the greater the difference between the actual width and the target width of the slot 130 etched.

[0071] Referring to FIG. 4 , FIG. 5 , and FIG. 6 , in one embodiment, before forming the laser engraved image, the method further includes correcting the 3D image to compensate for an etching deviation ΔV. The etching deviation ΔV is a deviation obtained by performing laser etching according to a second laser processing path generated by the 3D image file and then performing a wet etching process on the same type of light-transmitting material.

[0072] In the above embodiment, by correcting the 3D image of the area 110 to be processed of the transparent material 100 to compensate for the deviation of the first laser processing path generated directly according to the 3D image file, laser etching is performed, and then laser engraving is performed according to the corrected image based on the deviation obtained by the wet etching process previously performed on the same type of transparent material, and then wet etching is performed, so that the processing accuracy can be further improved. In the above embodiment, a portion of the area 110 to be processed of the transparent material 100 is pre-processed by laser. The laser blasting area 120 does not completely cover the area 110 to be processed of the transparent material 100 (that is, the preset groove area), but reserves a certain space for the etching of the sidewalls in the subsequent wet etching process to compensate for the etching deviation caused by the side etching during the wet etching process, thereby further improving the processing accuracy of the material; as shown in Figures 7, 8 and 9, for the processing of rectangular slots in the transparent material 100, the processing method of the present application can ensure that the processed slots have high verticality and good flatness, and the processing error can be controlled within 5um.

[0073] On the basis of the above embodiment, further, the step of performing laser engraving processing on the light-transmitting material 100 according to the first laser processing path to form the laser blasting area 120 includes: using a laser to sequentially scan the area to be processed 110 of the light-transmitting material 100 along the first direction F1, so that the area to be processed 110 of the light-transmitting material 100 forms a plurality of blasting layers 121 in the area to be processed 110 of the light-transmitting material 100, the plurality of blasting layers 121 are arranged along the first direction, and the blasting layers 121 extend along the second direction F2.

[0074] Furthermore, the spacing between two adjacent blasting layers 121 is 0.1 μm to 1000 μm, specifically 0.1 μm, 1 μm, 10 μm, 100 μm, 1000 μm or any value therebetween; if the spacing between two adjacent blasting layers 121 is too large, it is not conducive to increasing the etching rate of the to-be-processed area 110 of the light-transmitting material 100 during the wet etching process in S2, thereby not being conducive to etching a slot 130 that is consistent with or close to the preset slot size and shape at a preset position of the light-transmitting material 100; if the spacing between two adjacent blasting layers 121 is too small, it will lead to reduced processing efficiency of laser engraving, and may also cause excessive cracks in the light-transmitting material 100, making it impossible to remove the cracks by subsequent wet etching, or even worse, causing the light-transmitting material 100 to directly break.

[0075] Furthermore, the blasting holes 1211 of two adjacent blasting layers 121 are staggered. By staggering the blasting holes 1211 of two adjacent blasting layers 121, the etching efficiency of the etchant in S2 is improved, and the flatness of the etching bottom surface and the etching side wall surface can be ensured.

[0076] In one embodiment, the plurality of explosion layers 121 are arranged at equal intervals along the first direction F2 , which is beneficial for improving the overall processing efficiency of the light-transmitting material 100 .

[0077] In one embodiment, the second direction F1 is perpendicular to the first direction F2, and the step of using a laser to sequentially scan the area 110 to be processed of the light-transmitting material 100 along the first direction so that the area 110 to be processed of the light-transmitting material 100 forms a plurality of blasting layers 121 includes: using a laser to sequentially scan the area 110 to be processed of the light-transmitting material 100 from one end close to the processing table of the light-transmitting material 100 to the end away from the processing table of the light-transmitting material 100 so that the area 110 to be processed of the light-transmitting material 100 forms a plurality of blasting layers 121 arranged along the first direction F1, and the blasting layer 121 located at the uppermost end penetrates the top surface of the light-transmitting material 100.

[0078] In one embodiment, the first direction F1 is a vertical direction, and the light-transmitting material 100 is placed above its processing table. Specifically, as shown in Figures 3 and 4, when a rectangular slot needs to be opened on the top of the light-transmitting material 100, the light-transmitting material 100 is placed under a laser head, and the laser scans the processing area 110 of the light-transmitting material 100 layer by layer from bottom to top (the left and right ends of the processing area 110 of the light-transmitting material 100 are reserved to compensate for the etching deviation ΔV and are not scanned). As a result, multiple laser-blasted layers 121 are sequentially formed in the processing area 110 of the light-transmitting material 100 from bottom to top, and the topmost blasted layer 121 penetrates the top surface of the light-transmitting material 100. When the light-transmitting material 100 is further immersed in the etching solution, the etching rate of the etching solution on the area where the blasting layer 121 is located is much greater than the etching rate of the area of ​​the light-transmitting material 100 that has not been laser-processed, so that the slot 130 can be etched in the area to be processed 110 of the light-transmitting material 100.

[0079] Based on the above embodiment, in one embodiment, the blasting layer 121 has a plurality of blasting holes 1211. In S2, during the wet etching process, within the laser blasting area 120, the blasting holes 1211 can significantly increase the contact area between the light-transmitting material 100 and the etching solution, thereby making the etching rate of the laser blasting area 120 much higher than that of the area of ​​the light-transmitting material 100 that has not been laser blasted.

[0080] In one embodiment, the diameter of the blasting hole 1211 is 0.1 μm-500 μm, specifically 0.1 μm, 1 μm, 10 μm, 50 μm, 100 μm, 150 μm, 200 μm, 250 μm, 300 μm, 350 μm, 400 μm, 450 μm, 500 μm or any value therebetween.

[0081] In one embodiment, the distance between two adjacent blasting holes 1211 in the same blasting layer 121 is 0.1 μm to 1000 μm, specifically 0.1 μm, 1 μm, 10 μm, 100 μm, 1000 μm or any value therebetween; if the distance between two adjacent blasting holes 1211 in the same blasting layer 121 is too large, it is not conducive to increasing the etching rate of the to-be-processed area 110 of the light-transmitting material 100 during the wet etching process.

[0082] In S12, before performing the laser engraving process, the method further includes obtaining a dot matrix diagram of laser blasting points corresponding to the blasting layer 121, and the laser engraving process includes laser blasting corresponding positions of the light-transmitting material 100 according to the positions of the laser blasting points in the dot matrix diagram to form the blasting layer 121.

[0083] In one embodiment, in S12, a plurality of corresponding laser blasting point dot patterns are first generated according to the laser engraving image file, and then corresponding laser processing paths are generated according to the dot patterns of the laser blasting points. Then, the light-transmitting material 100 is laser engraved according to the laser processing path.

[0084] In another embodiment, the 3D image is composed of multiple first dot matrix layers, and the laser engraving image is composed of multiple second dot matrix layers. The first dot matrix layers correspond to the second dot matrix layers one by one, and the area of ​​the second dot matrix layer is 70% to 99% of the area of ​​the first dot matrix layer to which it corresponds, specifically 70%, 80%, 99% or any value therebetween; by controlling the area difference between the second dot matrix layer and the corresponding first dot matrix layer within the above range, the processing accuracy of the light-transmitting material 100 can be greatly improved.

[0085] In the above embodiment, the correction of the 3D image includes adjusting the diameter of the dots in the first dot matrix layer, or includes adjusting the number of dots in the first dot matrix layer. For example, if the 3D image is in the shape of a rectangular parallelepiped, and the plurality of first dot matrix layers constituting the 3D image are arranged sequentially from bottom to top, during the correction process, the number of dots in the first dot matrix layer is reduced layer by layer from bottom to top to obtain a plurality of second dot matrix layers arranged sequentially from top to bottom. Of two adjacent second dot matrix layers, the area of ​​the second dot matrix layer located at the upper end is smaller than the area of ​​the second dot matrix layer located at the lower end.

[0086] In one embodiment, in S12, the laser wavelength during the laser engraving process is 190 nm to 1100 nm, and specifically can be 190 nm, 193 nm, 248 nm, 266 nm, 343 nm, 355 nm, 500 nm, 515 nm, 532 nm, 700 nm, 900 nm, 1030 nm, 1064 nm, 1100 nm, or any value therebetween. Because different materials have different refractive indices for wavelengths within the same wavelength range, those skilled in the art can select a laser wavelength within an appropriate wavelength range based on the type of the light-transmitting material 100, and this application does not impose any particular limitation thereto.

[0087] In one embodiment, in S12, the laser spot diameter output during the laser engraving process is 0.1 μm to 500 μm, specifically 0.1 μm, 10 μm, 100 μm, 250 μm, 500 μm, or any value therebetween. Alternatively, the laser spot size output during the laser engraving process is 1.5 times the size of the spot. The laser spot size is proportional to the size of the blasting hole 1211. Those skilled in the art may adjust the laser spot diameter or size according to actual conditions.

[0088] It is understood that in S12, the laser engraving process is performed on the translucent material 100 using a laser engraving device. In one embodiment, during the laser engraving process, the method further includes real-time monitoring of the position of the laser beam. When the position of the laser beam is detected to be inaccurate, the position of the laser beam is corrected by adjusting the height or curvature of the focusing mirror of the laser engraving device. In this embodiment, by real-time monitoring of the laser beam position, the accuracy of the laser blasting can be ensured, thereby further improving the processing precision.

[0089] In the above embodiment, in detail, the method includes:

[0090] It should be noted that, in addition to the laser engraving equipment, other laser emitting devices can also be used in the present application to perform laser processing on the transparent material 100. Those skilled in the art can make a choice according to their needs, and this application does not limit this.

[0091] In a second aspect, the present application further proposes a processing system, which includes a laser engraving device and a wet etching device, and the method in any of the above embodiments is performed based on the processing system.

[0092] Alternatively, in one application scenario, the processing system includes a laser engraving device, which is used to perform laser engraving on the light-transmitting material 100 using the method described in any of the above embodiments, and then wet-etch the light-transmitting material 100 that has been laser-engraved using a corresponding wet etching device using the method described in any of the above embodiments to form slots corresponding to the area to be processed 110.

[0093] Alternatively, in another application scenario, the processing system includes a wet etching device. After the light-transmitting material 100 is laser engraved by a corresponding laser engraving device using the method described in any of the above embodiments, the wet etching device is used to wet-etch the light-transmitting material 100 using the method described in any of the above embodiments to form a slot corresponding to the area to be processed 110.

[0094] Specifically, the specific operation process of using the processing system to process slots on light-transmitting materials is as follows:

[0095] Prepare the light-transmitting material 100: Select a suitable light-transmitting material 100 and perform cleaning and drying processes;

[0096] Selecting a suitable laser wavelength, laser energy and focusing lens focal length according to the refractive index of the light-transmitting material 100;

[0097] Setting a 3D image of the area 110 to be processed of the light-transmitting material 100, and forming a laser engraving image according to the 3D image;

[0098] According to the size and processing accuracy requirements of the laser engraving image, a suitable focus spot size and spot array spacing are selected, and a dot matrix file of the laser blasting point is generated by an image generating device;

[0099] Placing the light-transmitting material 100 on the workbench of the laser engraving equipment, and accurately positioning the light-transmitting material 100 using a positioning device;

[0100] Focus setting: adjusting the laser focus to the lowest plane position of the to-be-processed area 110 of the light-transmitting material 100 through the Z-axis of the laser engraving device;

[0101] Laser etching: generating a corresponding laser processing path according to the dot pattern file of the laser blasting points, emitting a laser beam, and laser etching the light-transmitting material 100 along the laser processing path;

[0102] Wet etching: The light-transmitting material 100 is removed from the workbench of the laser engraving device, and the laser blasting area 120 of the light-transmitting material 100 is wet-etched by a wet etching device. After the etching is completed, the light-transmitting material 100 is removed from the wet etching device.

[0103] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A method for processing slots on a light-transmitting material, characterized in that, The method includes the following steps: Performing laser engraving on the area to be processed of the light-transmitting material by using a laser internal engraving process, so that the surface on at least one side of the light-transmitting material is penetrated; Performing wet etching on the product of the laser engraving process to etch and form a slot corresponding to the area to be processed.

2. The method according to claim 1, wherein The step of performing laser engraving on the area to be processed of the light-transmitting material by using a laser internal engraving process includes: Setting a 3D image of the area to be processed of the light-transmitting material, and forming a laser engraving image according to the 3D image; Generating a corresponding first laser processing path according to the laser engraving image file, and performing laser engraving on the light-transmitting material according to the first laser processing path to form a laser blasting area, and the laser blasting area at least penetrates the surface on one side of the light-transmitting material.

3. The method according to claim 2, wherein Before forming the laser engraving image, the method further includes: Correcting the 3D image to compensate for the etching deviation, where the etching deviation is the deviation obtained by performing laser etching according to a second laser processing path generated according to the 3D image file and then performing wet etching on the same type of light-transmitting material in advance.

4. The method according to claim 3, wherein The step of performing laser engraving on the light-transmitting material according to the first laser processing path to form a laser blasting area includes: Scanning the area to be processed of the light-transmitting material with a laser in sequence along a first direction, so that multiple blasting layers are formed in the area to be processed of the light-transmitting material, and the multiple blasting layers are arranged along the first direction, and the blasting layer extends along a second direction.

5. The method according to claim 4, wherein The step of scanning the area to be processed of the light-transmitting material with a laser in sequence along a first direction so that multiple blasting layers are formed in the area to be processed of the light-transmitting material includes: Scanning the area to be processed of the light-transmitting material with a laser in sequence from one end close to the processing table of the light-transmitting material to the end far from the processing table of the light-transmitting material, so that multiple blasting layers arranged along the first direction are formed in the area to be processed of the light-transmitting material; The second direction is perpendicular to the first direction.

6. The method according to claim 4, characterized in that, The blasting layer has multiple blasting holes. Before performing the laser engraving process, the method further includes: Obtaining a dot matrix diagram of the laser blasting points corresponding to the blasting layer; The laser engraving process includes performing laser blasting on the corresponding position of the light-transmitting material according to the positions of the laser blasting points in the dot matrix diagram to form the blasting layer.

7. The method according to claim 6, wherein The distance between two adjacent blasting layers is 0.1 μm to 1000 μm, and / or the distance between two adjacent blasting holes in the same blasting layer is 0.1 μm to 1000 μm.

8. The method according to claim 6, wherein The blasting holes of two adjacent blasting layers are arranged in a staggered manner.

9. The method according to claim 6, wherein The diameter of the blasting hole is 0.1 μm to 500 μm.

10. The method according to claim 4, characterized in that, The multiple blasting layers are arranged at equal intervals along the first direction.

11. The method according to any one of claims 1 to 10, characterized in that, The laser wavelength of the laser engraving process is 190 nm to 1100 nm, and / or the output laser spot diameter is 0.1 μm to 500 μm.

12. The method according to any one of claims 1-10, characterized in that, The 3D image is composed of a plurality of first dot matrix layers, the laser engraving image is composed of a plurality of second dot matrix layers, the first dot matrix layers and the second dot matrix layers correspond one by one, and the area of the second dot matrix layer is 70% - 99% of the area of the corresponding first dot matrix layer.

13. The method according to any one of claims 1 to 10, characterized in that, When using a laser internal engraving device to perform the laser engraving process on the light-transmitting material, during the laser engraving process, the method further includes real-time monitoring of the position of the laser beam. When it is detected that the position of the laser beam is inaccurate, the position of the laser beam is corrected by adjusting the height or curvature of the focusing lens of the laser internal engraving device.

14. The method according to claim 2, wherein The step of subjecting the laser engraving process product to wet etching to etch and form a slot corresponding to the area to be processed includes: Bringing the surface of the laser blasting area into contact with the etching solution for reaction to etch and form a slot corresponding to the area to be processed.

15. The method according to any one of claims 14, characterized in that, It further includes at least one of the following features (1) - (3): (1) The etching solution includes one or more of hydrofluoric acid, ammonium fluoride, sulfuric acid, sodium sulfate, oxalic acid, nitric acid, phosphoric acid, and acetic acid; species; (2) The shape of the slot is any one of a rectangular body shape, a hemispherical body shape, a cylindrical body shape, an inverted conical body shape, and other regular or irregular shapes; (3) The method is applicable to the processing of any light-transmitting material in the PCB industry, panel industry, and semiconductor industry, and the light-transmitting material includes any one of glass, light-transmitting semiconductor material, and light-transmitting plastic.

16. A processing system, characterized in that, The processing system includes a laser internal engraving device and a wet etching device, and the method according to any one of claims 1 - 15 is carried out based on the processing system; Alternatively, the processing system includes a laser internal engraving device, and the laser internal engraving device is applied to perform laser engraving on the light-transmitting material according to the method of any one of claims 1 - 15, and then the corresponding wet etching device uses the method of any one of claims 1 - 15 to perform wet etching on the light-transmitting material that has completed the laser engraving process to etch and form a slot corresponding to the area to be processed; Alternatively, the processing system includes a wet etching device, and after the light-transmitting material is laser engraved by the corresponding laser internal engraving device according to the method of any one of claims 1 - 15, the wet etching device is applied to perform wet etching on the light-transmitting material according to the method of any one of claims 1 - 15 to etch and form a slot corresponding to the area to be processed.

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