Semiconductor element and semiconductor device

Abstract

This semiconductor element is provided with: a body that includes a semiconductor layer; an electrode that is electrically connected to the semiconductor layer; a first contact layer that is electrically connected to the electrode; a second contact layer that is electrically connected to the electrode; and a terminal that is electrically connected to the first contact layer and the second contact layer. With the first contact layer as a reference, the terminal is separated from the electrode in a first direction. The first contact layer and the second contact layer are separated from each other in a direction orthogonal to the first direction. When viewed in the first direction, the terminal overlaps the first contact layer and the second contact layer.

Description

Semiconductor element and semiconductor device

[0001] The present disclosure relates to a semiconductor element and a semiconductor device on which the semiconductor element is mounted.

[0002] Patent Document 1 discloses an example of a semiconductor element (referred to as a semiconductor device in Patent Document 1). The semiconductor element includes a substrate having an element formation surface, pad terminals provided on the element formation surface, Cu rewiring extending from the pad terminals, an organic coating covering the Cu rewiring, a resin film covering the organic coating, and an external connection terminal electrically connected to the Cu rewiring. The surface of the Cu rewiring includes a roughened surface that has been roughened. The organic coating is in contact with the roughened surface. This configuration allows the organic coating to exhibit an anchoring effect with respect to the Cu rewiring. Furthermore, since the organic coating has a relatively strong affinity with the resin film, the adhesive strength of the resin film to the organic coating is stronger. This makes it possible to suppress peeling of the resin film from the Cu rewiring layer.

[0003] In the semiconductor device disclosed in Patent Document 1, the Cu rewiring is electrically connected to the pad terminal. If the contact area of ​​the Cu rewiring with the pad terminal is relatively small, there is a concern that the resistance value of the conductive path from the pad terminal to the external connection terminal may increase.

[0004] Japanese Patent Application Laid-Open No. 2014-165335

[0005] [Summary] An object of the present disclosure is to provide an improved semiconductor device compared to conventional semiconductor devices. In particular, in view of the above circumstances, an object of the present disclosure is to provide a semiconductor element that can reduce the resistance value of the conductive path from the electrode to the terminal.

[0006] A semiconductor device provided by a first aspect of the present disclosure includes a body including a semiconductor layer, an electrode in conduction with the semiconductor layer, first and second contact layers in conduction with the electrode, and terminals in conduction with the first and second contact layers. The electrode is located on one side of the body in a first direction. The terminal is located on the opposite side of the electrode with respect to the first contact layer in the first direction. The first and second contact layers are spaced apart from each other in a direction perpendicular to the first direction. When viewed in the first direction, the terminal overlaps each of the first and second contact layers.

[0007] A semiconductor device according to a second aspect of the present disclosure includes the semiconductor element according to the first aspect of the present disclosure and a substrate including a conductive portion, the semiconductor element being mounted on the substrate, and the terminal being conductively bonded to the conductive portion.

[0008] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0009] FIG. 1 is a partially enlarged plan view of a semiconductor element according to a first embodiment of the present disclosure, showing the second protective film, the third protective film, the terminals, and the bonding layer. FIG. 2 is a cross-sectional view taken along line II-II in FIG. 1. FIG. 3 is a cross-sectional view of a semiconductor device equipped with the semiconductor element shown in FIG. 1. FIG. 4 is a partially enlarged plan view of a semiconductor element according to a second embodiment of the present disclosure, showing the second protective film, the third protective film, the terminals, and the bonding layer. FIG. 5 is a cross-sectional view taken along line V-V in FIG. 4. FIG. 6 is a partially enlarged plan view of a semiconductor element according to a third embodiment of the present disclosure, showing the second protective film, the third protective film, the terminals, and the bonding layer. FIG. 7 is a partially enlarged plan view of a semiconductor element according to a fourth embodiment of the present disclosure, showing the second protective film, the third protective film, the rewiring, the multiple contact layers, the terminals, and the bonding layer. FIG. 8 is a partially enlarged cross-sectional view of a semiconductor element according to a fifth embodiment of the present disclosure.

[0010] DETAILED DESCRIPTION The present disclosure will be described in detail with reference to the accompanying drawings.

[0011] First Embodiment: A semiconductor element A10 according to a first embodiment of the present disclosure will be described with reference to FIGS. 1 and 2 . The semiconductor element A10 is an LSI (Large Scale Integration) known as a wafer-level-chip size package (WL-CSP). The semiconductor element A10 includes a body 11, electrodes 12, a first protective film 20, a second protective film 31, a third protective film 32, rewiring 41, multiple contact layers 42, terminals 50, and a bonding layer 60. For ease of understanding, FIG. 1 shows the second protective film 31, the third protective film 32, the terminals 50, and the bonding layer 60 in a perspective view. The third protective film 32 and the terminals 50 shown in FIG. 1 are indicated by imaginary lines (double-dashed lines).

[0012] In the description of the semiconductor element A10 and the semiconductor device B described later, for convenience, the normal direction to the main surface 11A of the body 11 described later will be referred to as the "first direction z." The direction perpendicular to the first direction z will be referred to as the "second direction x." The direction perpendicular to each of the first direction z and the second direction x will be referred to as the "third direction y."

[0013] 2, the main body 11 includes a semiconductor substrate 111 and a semiconductor layer 112 located on one side of the semiconductor substrate 111 in the first direction z. The main body 11 has a main surface 11A facing one side of the first direction z. The semiconductor layer 112 includes the main surface 11A. The semiconductor substrate 111 is obtained from, for example, a silicon wafer. Various semiconductor circuits such as transistors and diodes are configured on and near the main surface 11A of the semiconductor layer 112.

[0014] 2, the electrode 12 is located on one side of the main body 11 in the first direction z. The electrode 12 is in contact with the main surface 11A of the main body 11. The electrode 12 is electrically connected to any of various semiconductor circuits configured in the semiconductor layer 112. The electrode 12 contains, for example, aluminum (Al).

[0015] 2 , the electrode 12 has a connection surface 121. The connection surface 121 faces the same side as the main surface 11A of the body 11 in the first direction z. A portion of the connection surface 121 is covered with a first protective film 20.

[0016] 2, the first protective film 20 covers the main surface 11A of the main body 11 and a part of the electrode 12. The first protective film 20 is a thin film containing silicon dioxide (SiO2) or silicon nitride (Si3N4), or a laminate of these thin films.

[0017] 1 and 2 , the first protective film 20 has a plurality of first openings 21. Each of the plurality of first openings 21 penetrates the first protective film 20 in the first direction z. The connection surface 121 of the electrode 12 is exposed from each of the plurality of first openings 21. When viewed in the first direction z, the plurality of first openings 21 are located inward from the periphery of the connection surface 121.

[0018] As shown in FIG. 2 , the second protective film 31 is located between the main body 11 and the third protective film 32 in the first direction z. The second protective film 31 covers a portion of the electrode 12 and the first protective film 20. The second protective film 31 is an insulator containing an organic compound. The second protective film 31 is made of a material containing polyimide. The second protective film 31 includes a portion located between the first protective film 20 and the rewiring 41. The second protective film 31 is accommodated in each of the multiple first openings 21 of the first protective film 20 and includes portions in contact with the first protective film 20 and the rewiring 41.

[0019] As shown in FIG. 2 , the redistribution line 41 is located between the plurality of contact layers 42 and the terminal 50 in the first direction z. As shown in FIG. 1 , the redistribution line 41 extends in the second direction x. The redistribution line 41 is electrically connected to the electrode 12 via the plurality of contact layers 42. The redistribution line 41 includes a barrier layer in contact with the second protective film 31, a seed layer stacked on the barrier layer, and a plating layer stacked on the seed layer. The barrier layer contains titanium (Ti). The seed layer and the plating layer each contain copper (Cu).

[0020] 2 , the rewiring 41 is sandwiched between the second protective film 31 and the third protective film 32. The rewiring 41 has a plurality of recesses 411. The recesses 411 are recessed in the first direction z from the side facing the third protective film 32. When viewed in the first direction z, the recesses 411 individually overlap the contact layers 42. The terminals 50 are recessed into the recesses 411.

[0021] As shown in FIG. 2 , the multiple contact layers 42 are located between the electrode 12 and the redistribution lines 41 in the first direction z. Each of the multiple contact layers 42 is electrically connected to the electrode 12 and the redistribution lines 41. This allows the redistribution lines 41 and the multiple contact layers 42 to be electrically connected to the electrode 12. Each of the multiple contact layers 42 includes a barrier layer in contact with the electrode 12 and the second protective film 31, a seed layer stacked on the barrier layer, and a plating layer stacked on the seed layer. The barrier layer contains titanium. The seed layer and the plating layer each contain copper.

[0022] 1 and 2 , the plurality of contact layers 42 include a first contact layer 421 and a second contact layer 422. The first contact layer 421 and the second contact layer 422 are spaced apart from each other in the second direction x. At least a portion of each of the first contact layer 421 and the second contact layer 422 is individually accommodated in the plurality of first openings 21 of the first protective film 20.

[0023] As shown in FIG. 2 , the third protective film 32 covers the second protective film 31 and the rewiring 41. The third protective film 32 is an insulator containing an organic compound. The third protective film 32 is made of a material containing polyimide. In the semiconductor element A10, the composition of the third protective film 32 is the same as the composition of the second protective film 31. The third protective film 32 is in contact with the terminal 50. The dimension of the third protective film 32 in the first direction z is larger than the dimension of the second protective film 31 in the first direction z. The third protective film 32 has a second opening 321. The second opening 321 penetrates the third protective film 32 in the first direction z. The rewiring 41 is exposed from the second opening 321.

[0024] As shown in FIG. 2 , the terminal 50 is located on the opposite side of the rewiring 41 from the multiple contact layers 42 in the first direction z. The terminal 50 is electrically connected to the rewiring 41. This allows the terminal 50 to be electrically connected to the multiple contact layers 42. A portion of the terminal 50 is accommodated in the second opening 321 of the third protective film 32. As shown in FIG. 1 , the terminal 50 protrudes outward from the second opening 321 when viewed in the first direction z. The terminal 50 is exposed from the third protective film 32. In the semiconductor element A10, a portion of the terminal 50 protrudes from the third protective film 32 in the first direction z. The terminal 50 contains copper.

[0025] 1 , as viewed in the first direction z, the terminal 50 overlaps each of the first contact layer 421 and the second contact layer 422. As viewed in the first direction z, the area of ​​each of the first contact layer 421 and the second contact layer 422 is smaller than the area of ​​the terminal 50. In the semiconductor element A10, as viewed in the first direction z, the terminal 50 overlaps each of the entire first contact layer 421 and the entire second contact layer 422.

[0026] As shown in FIG. 3 , the bonding layer 60 is located on the opposite side of the rewiring 41 from the terminal 50 in the first direction z. The bonding layer 60 is electrically connected to the terminal 50. The bonding layer 60 is made of solder. Therefore, the composition of the bonding layer 60 includes tin. The melting point of the bonding layer 60 is lower than the melting point of the terminal 50.

[0027] Next, a semiconductor device B on which the semiconductor element A10 is mounted will be described with reference to FIG.

[0028] 3 , the semiconductor device B includes a semiconductor element A10 and a base material 71. The semiconductor element A10 is mounted on the base material 71. The base material 71 includes a substrate 711 and a conductive portion 712. The substrate 711 is an insulator. The conductive portion 712 includes, for example, copper. The terminal 50 of the semiconductor element A10 is conductively bonded to the conductive portion 712 via a bonding layer 60.

[0029] In semiconductor device B, the base material 71 is a wiring board. Alternatively, the base material 71 may be configured to include only conductive portions 712 that are leads. Furthermore, the base material 71 may be configured to include external terminals located on the opposite side of the substrate 711 in the first direction z from the conductive portions 712. In semiconductor device B, a sealing resin such as underfill may cover the semiconductor element A10.

[0030] Next, the effects of the semiconductor element A10 will be described.

[0031] The semiconductor element A10 includes a body 11, an electrode 12, a first contact layer 421, a second contact layer 422, and a terminal 50. The first contact layer 421 and the second contact layer 422 are spaced apart from each other in a direction perpendicular to the first direction z. As viewed in the first direction z, the terminal 50 overlaps each of the first contact layer 421 and the second contact layer 422. This configuration further increases the cross-sectional area of ​​the conductive path of the semiconductor element A10 from the electrode 12 to the terminal 50 in a direction perpendicular to the first direction z. Therefore, this configuration makes it possible to reduce the resistance of the conductive path from the electrode 12 to the terminal 50 in the semiconductor element A10.

[0032] When viewed in the first direction z, the area of ​​each of the first contact layer 421 and the second contact layer 422 is smaller than the area of ​​the terminal 50. By adopting this configuration, the resistance value of the conductive path from the electrode 12 to the terminal 50 can be reduced without increasing the size of each of the first contact layer 421 and the second contact layer 422.

[0033] When viewed in the first direction z, the terminal 50 overlaps the entire first contact layer 421 and the entire second contact layer 422. This configuration suppresses the extension of the conductive path from the electrode 12 to the terminal 50, thereby effectively reducing the resistance value of the conductive path from the electrode 12 to the terminal 50.

[0034] The rewiring 41 has a plurality of recesses 411. The terminal 50 is recessed into the plurality of recesses 411. This configuration increases the contact area of ​​the terminal 50 with the rewiring 41, thereby more effectively reducing the resistance value of the conductive path from the electrode 12 to the terminal 50.

[0035] Second Embodiment: A semiconductor device A20 according to a second embodiment of the present disclosure will be described with reference to Figures 4 and 5. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are given the same reference numerals, and redundant description will be omitted. For ease of understanding, Figure 4 shows the second protective film 31, the third protective film 32, the terminals 50, and the bonding layer 60 in a perspective view. The third protective film 32 and the terminals 50 are shown in imaginary lines in Figure 4. Figure 4 corresponds to Figure 1, which shows the semiconductor device A10.

[0036] In the semiconductor element A20, the configurations of the contact layers 42 and the third protective film 32 are different from those of the semiconductor element A10.

[0037] 4 and 5 , the multiple contact layers 42 include a first contact layer 421, a second contact layer 422, and a third contact layer 423. The third contact layer 423 is spaced apart from the first contact layer 421 and the second contact layer 422 in the second direction x. The third contact layer 423 is located between the first contact layer 421 and the second contact layer 422 in the second direction x.

[0038] 4 , as viewed in the first direction z, the first contact layer 421 and the second contact layer 422 each protrude outward from the terminal 50. As viewed in the first direction z, the terminal 50 overlaps the entire third contact layer 423. As viewed in the first direction z, the area of ​​the third contact layer 423 is smaller than the area of ​​the terminal 50.

[0039] As shown in FIG. 5, the third protective film 32 is recessed into at least one of the recesses 411 of the rewiring 41 .

[0040] Next, the effects of the semiconductor element A20 will be described.

[0041] The semiconductor element A20 includes a body 11, an electrode 12, a first contact layer 421, a second contact layer 422, and a terminal 50. The first contact layer 421 and the second contact layer 422 are spaced apart from each other in a direction perpendicular to the first direction z. As viewed in the first direction z, the terminal 50 overlaps each of the first contact layer 421 and the second contact layer 422. Therefore, with this configuration, the semiconductor element A20 can also reduce the resistance of the conductive path from the electrode 12 to the terminal 50. Furthermore, by having a configuration common to the semiconductor element A10, the semiconductor element A20 achieves the same effects as the semiconductor element A10.

[0042] The semiconductor element A20 further includes a third contact layer 423. The third contact layer 423 is spaced apart from the first contact layer 421 in a direction perpendicular to the first direction z. As viewed in the first direction z, the terminal 50 overlaps the third contact layer 423. This configuration further increases the cross-sectional area of ​​the conductive path of the semiconductor element A20 from the electrode 12 to the terminal 50 in a direction perpendicular to the first direction z. This further reduces the resistance of the conductive path from the electrode 12 to the terminal 50.

[0043] In the semiconductor element A20, as viewed in the first direction z, the first contact layer 421 and the second contact layer 422 each protrude outward from the terminal 50. Even with this configuration, the total contact area of ​​each of the plurality of contact layers 42 with the electrode 12 is further increased, thereby making it possible to reduce the resistance value of the conductive path from the electrode 12 to the terminal 50 more than before.

[0044] In the semiconductor element A20, the third protective film 32 is recessed into at least one of the recesses 411 of the rewiring 41. By adopting this configuration, the third protective film 32 exhibits an anchoring effect on the rewiring 41. As a result, peeling of the third protective film 32 from the rewiring 41 is suppressed.

[0045] Third Embodiment: A semiconductor device A30 according to a third embodiment of the present disclosure will be described with reference to FIG. 6. In this figure, elements that are the same as or similar to those in the semiconductor device A10 described above are designated by the same reference numerals, and redundant description will be omitted. For ease of understanding, FIG. 6 shows the second protective film 31, the third protective film 32, the terminals 50, and the bonding layer 60 in a perspective view. The third protective film 32 and the terminals 50 are shown in imaginary lines in FIG. 6. FIG. 6 corresponds to FIG. 1, which shows the semiconductor device A10.

[0046] In the semiconductor element A30, the configuration of the plurality of contact layers 42 differs from that of the semiconductor element A20 described above.

[0047] 6 , the multiple contact layers 42 include two first contact layers 421, two second contact layers 422, and two third contact layers 423. The two first contact layers 421 are spaced apart from each other in the third direction y. The two second contact layers 422 are spaced apart from each other in the third direction y. The two third contact layers 423 are spaced apart from each other in the third direction y. When viewed in the first direction z, each of the two first contact layers 421 and the two second contact layers 422 protrudes outward from the terminal 50. When viewed in the first direction z, each of the two third contact layers 423 entirely overlaps the terminal 50.

[0048] Next, the effects of the semiconductor element A30 will be described.

[0049] The semiconductor element A30 includes a body 11, an electrode 12, a first contact layer 421, a second contact layer 422, and a terminal 50. The first contact layer 421 and the second contact layer 422 are spaced apart from each other in a direction perpendicular to the first direction z. As viewed in the first direction z, the terminal 50 overlaps each of the first contact layer 421 and the second contact layer 422. Therefore, with this configuration, the semiconductor element A30 can also reduce the resistance of the conductive path from the electrode 12 to the terminal 50. Furthermore, by having a configuration common to the semiconductor element A10, the semiconductor element A30 achieves the same effects as the semiconductor element A10.

[0050] The semiconductor element A30 includes two first contact layers 421, two second contact layers 422, and two third contact layers 423. With this configuration, the cross-sectional area of ​​the conductive path of the semiconductor element A30 from the electrode 12 to the terminal 50 in the direction perpendicular to the first direction z is further increased compared to that of the semiconductor element A20. As a result, the resistance value of the conductive path from the electrode 12 to the terminal 50 is further reduced compared to that of the semiconductor element A20.

[0051] Fourth Embodiment: A semiconductor device A40 according to a fourth embodiment of the present disclosure will be described with reference to FIG. 7. In this figure, elements that are the same as or similar to those in the semiconductor device A10 described above are given the same reference numerals, and redundant description will be omitted. For ease of understanding, FIG. 7 shows the second protective film 31, the third protective film 32, the rewiring 41, the multiple contact layers 42, the terminals 50, and the bonding layer 60 in a perspective view. The multiple contact layers 42 shown in FIG. 7 are indicated by imaginary lines.

[0052] In the semiconductor element A40, the configuration of the first protective film 20 is different from that of the semiconductor element A10.

[0053] As shown in FIG. 7 , when viewed in the first direction z, the periphery of each of the multiple first openings 21 includes a first edge 211, a second edge 212, a third edge 213, a first connecting edge 214, and a second connecting edge 215. The first edge 211 extends in the second direction x. The second edge 212 and the third edge 213 each extend in the third direction y. Therefore, the direction in which the second edge 212 and the third edge 213 extend is different from the direction in which the first edge 211 extends. The third edge 213 is located on the opposite side of the first edge 211 from the second edge 212. The lengths L2 and L3 of the second edge 212 and the third edge 213 are equal to or less than the length L1 of the first edge 211. In the semiconductor element A40, the lengths L2 and L3 are equal to the length L1.

[0054] 7 , the first connecting edge 214 connects the first edge 211 and the second edge 212. The first connecting edge 214 is curved. The radius of curvature r1 of the first connecting edge 214 is 20% or more of the length L1 of the first edge 211. When viewed in the first direction z, the first connecting edge 214 is spaced apart from the extension line of the first edge 211 and the extension line of the second edge 212.

[0055] 7 , the second connecting edge 215 connects the first edge 211 and the third edge 213. The second connecting edge 215 is curved. The radius of curvature r2 of the second connecting edge 215 is 20% or more of the length L1 of the first edge 211. In the semiconductor element A40, the radius of curvature r2 is equal to the radius of curvature r1 of the first connecting edge 214. When viewed in the first direction z, the second connecting edge 215 is spaced apart from the extension line of the first edge 211 and the extension line of the third edge 213.

[0056] Next, the effects of the semiconductor element A40 will be described.

[0057] The semiconductor element A40 includes a body 11, an electrode 12, a first contact layer 421, a second contact layer 422, and a terminal 50. The first contact layer 421 and the second contact layer 422 are spaced apart from each other in a direction perpendicular to the first direction z. As viewed in the first direction z, the terminal 50 overlaps each of the first contact layer 421 and the second contact layer 422. Therefore, with this configuration, the semiconductor element A40 can also reduce the resistance of the conductive path from the electrode 12 to the terminal 50. Furthermore, by having a configuration common to the semiconductor element A10, the semiconductor element A40 achieves the same effects as the semiconductor element A10.

[0058] In the semiconductor element A40, when viewed in the first direction z, the periphery of the first opening 21 includes a first edge 211, a second edge 212, and a first connecting edge 214. The direction in which the second edge 212 extends is different from the direction in which the first edge 211 extends. The first connecting edge 214 is curved. Here, when the semiconductor element A40 is in use, thermal stress caused by heat conducted from the body 11 to the electrode 12 acts on the first protective film 20. Therefore, by adopting this configuration, the concentration of thermal stress acting on the periphery of the first opening 21 can be reduced. This can suppress the occurrence of cracks in the first protective film 20.

[0059] In addition to the above configuration, the length L2 of the second edge 212 is equal to or less than the length L1 of the first edge 211. The radius of curvature r1 of the first connecting edge 214 is equal to or greater than 20% of the length L1. By adopting this configuration, the concentration of thermal stress acting on the periphery of the first opening 21 can be effectively reduced.

[0060] Fifth embodiment: A semiconductor device A50 according to a fifth embodiment of the present disclosure will be described with reference to Fig. 8. In this figure, elements that are the same as or similar to those of the semiconductor device A10 described above are designated by the same reference numerals, and duplicated descriptions will be omitted.

[0061] In the semiconductor element A50, the configuration of the first protective film 20 is different from that of the semiconductor element A10.

[0062] 8 , the first protective film 20 has a covering portion 22 that covers the electrode 12. When viewed in the first direction z, the covering portion 22 entirely overlaps the electrode 12. The covering portion 22 defines each of the multiple first openings 21. A dimension t2 of the covering portion 22 in the first direction z is larger than a dimension t1 of the electrode 12 in the first direction z.

[0063] Next, the effects of the semiconductor element A50 will be described.

[0064] The semiconductor element A50 includes a body 11, an electrode 12, a first contact layer 421, a second contact layer 422, and a terminal 50. The first contact layer 421 and the second contact layer 422 are spaced apart from each other in a direction perpendicular to the first direction z. As viewed in the first direction z, the terminal 50 overlaps each of the first contact layer 421 and the second contact layer 422. Therefore, with this configuration, the semiconductor element A50 can also reduce the resistance of the conductive path from the electrode 12 to the terminal 50. Furthermore, by having a configuration common to the semiconductor element A10, the semiconductor element A50 achieves the same effects as the semiconductor element A10.

[0065] In the semiconductor element A50, the first protective film 20 has a covering portion 22 that covers the electrode 12. When viewed in the first direction z, the entire covering portion 22 overlaps the electrode 12. A dimension t2 of the covering portion 22 in the first direction z is larger than a dimension t1 of the electrode 12 in the first direction z. Here, when the semiconductor element A50 is in use, thermal stress caused by heat conducted from the body 11 to the electrode 12 acts on the first protective film 20. Therefore, by adopting this configuration, the concentration of thermal stress in the covering portion 22 is reduced, thereby suppressing the occurrence of cracks in the first protective film 20.

[0066] The present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the present disclosure can be freely modified in various ways.

[0067] The present disclosure includes embodiments described in the following appendices. Appendix 1. A semiconductor device comprising: a body including a semiconductor layer; an electrode located on one side of the body in a first direction and conducting to the semiconductor layer; first and second contact layers conducting to the electrode; and a terminal located on the opposite side of the first contact layer in the first direction from the electrode and conducting to the first contact layer and the second contact layer, wherein the first contact layer and the second contact layer are spaced apart from each other in a direction perpendicular to the first direction, and the terminal overlaps each of the first contact layer and the second contact layer as viewed in the first direction. Appendix 2. The semiconductor device according to Appendix 1, wherein an area of ​​each of the first contact layer and the second contact layer is smaller than an area of ​​the terminal as viewed in the first direction. Appendix 3. The semiconductor device according to Appendix 2, wherein the terminal overlaps each of the first contact layer and the second contact layer entirely as viewed in the first direction. Appendix 4. The semiconductor element according to Supplementary Note 2, wherein the first contact layer protrudes outward from the terminal when viewed in the first direction.Supplementary Note 5. The semiconductor element according to Supplementary Note 4, wherein the second contact layer protrudes outward from the terminal when viewed in the first direction.Supplementary Note 6. The semiconductor element according to Supplementary Note 2, further comprising a third contact layer conducting to the electrode, the third contact layer being spaced apart from the first contact layer in a direction perpendicular to the first direction, the terminal overlapping the third contact layer when viewed in the first direction, and an area of ​​the third contact layer being smaller than an area of ​​the terminal when viewed in the first direction.Supplementary Note 7. The semiconductor element according to any of Supplements 2 to 6, wherein the first contact layer and the second contact layer are electrically connected to the electrode.Appendix 8. The semiconductor element of Appendix 7, further comprising a first protective film located on the same side of the body as the electrode and covering a portion of the electrode and the body, wherein the first protective film penetrates in the first direction and has a plurality of first openings exposing the electrode, and at least a portion of each of the first contact layer and the second contact layer is individually accommodated in the plurality of first openings. Appendix 9. The semiconductor element of Appendix 8, wherein the first protective film includes at least one of silicon dioxide and silicon nitride. Appendix 10. The semiconductor element of Appendix 9, wherein, when viewed in the first direction, a periphery of each of the plurality of first openings includes a first edge and a second edge extending in a direction perpendicular to the first direction, and a first connecting edge connecting the first edge and the second edge, wherein the extending direction of the second edge is different from the extending direction of the first edge, and the first connecting edge is curved. Appendix 11. The semiconductor element of Appendix 10, wherein, when viewed in the first direction, the first connecting edge is spaced apart from an extension line of the first edge and an extension line of the second edge. Appendix 12. The semiconductor element of Appendix 11, wherein a length of the second edge is equal to or less than a length of the first edge, and a radius of curvature of the first connecting edge is 20% or more of the length of the first edge. Appendix 13. The semiconductor element of Appendix 9, wherein the first protective film has a covering portion that covers the electrode, when viewed in the first direction, the covering portion entirely overlaps the electrode, and a dimension of the covering portion in the first direction is larger than a dimension of the electrode in the first direction. Appendix 14. The semiconductor element of Appendix 9, further comprising: a second protective film that covers the first protective film; and a rewiring located between the first contact layer and the terminal in the first direction, the rewiring being electrically connected to the first contact layer, the second contact layer, and the terminal, and the second protective film including a portion sandwiched between the first protective film and the rewiring. Appendix 15. The semiconductor element according to Appendix 14, wherein the second protective film is accommodated in each of the plurality of first openings and includes a portion in contact with the first protective film.Appendix 16. The semiconductor element according to Appendix 15, further comprising a third protective film covering the second protective film and the rewiring, the third protective film being in contact with the terminal, and the terminal being exposed from the third protective film. Appendix 17. The semiconductor element according to Appendix 16, wherein the third protective film penetrates in the first direction and has a second opening exposing the rewiring, and a portion of the terminal is housed in the second opening. Appendix 18. The semiconductor element according to Appendix 17, wherein a portion of the terminal protrudes from the second opening, and the terminal protrudes outward from the second opening as viewed in the first direction. Appendix 19. The semiconductor element according to Appendix 18, further comprising a bonding layer electrically connected to the terminal, the bonding layer being located on the opposite side of the terminal from the rewiring, and a melting point of the bonding layer being lower than a melting point of the terminal. Appendix 20. A semiconductor device comprising: a semiconductor element according to Appendix 7; and a substrate including a conductive portion, wherein the semiconductor element is mounted on the substrate, and the terminal is conductively joined to the conductive portion. Appendix 21. The semiconductor element according to Appendix 11, wherein the direction in which the second edge extends is perpendicular to the direction in which the first edge extends. Appendix 22. The semiconductor element according to Appendix 21, wherein, as viewed in the first direction, the periphery of the first opening includes a third edge located on the opposite side of the second edge with the first edge therebetween, and a second connecting edge connecting the first edge and the third edge, wherein the third edge extends in the same direction as the second edge, and the second connecting edge is curved. Appendix 23. The semiconductor element according to Appendix 22, wherein the length of the third edge is equal to or less than the length of the first edge, and the radius of curvature of the second connecting edge is 20% or more of the length of the first edge. Appendix 24. The semiconductor element according to claim 16, wherein the rewiring has a plurality of recesses recessed in the first direction from a side where the terminal is located in the first direction, the plurality of recesses individually overlapping the first contact layer and the second contact layer as viewed in the first direction, and the terminal is recessed into the plurality of recesses. 25. The semiconductor element according to claim 24, wherein the third protective film is recessed into any of the plurality of recesses.Appendix 26. The semiconductor element according to Appendix 16, wherein the second protective film and the third protective film each include polyimide. Appendix 27. The semiconductor element according to Appendix 16, wherein a dimension of the third protective film in the first direction is larger than a dimension of the second protective film in the first direction.

[0068] A10 to A50: semiconductor element B: semiconductor device 11: main body 11A: main surface 111: semiconductor substrate 112: semiconductor layer 12: electrode 121: connection surface 20: first protective film 21: first opening 211 to 213: first edge to third edge 214, 215: first connecting edge, second connecting edge 22: covering portion 31: second protective film 32: third protective film 321: second opening 41: rewiring 411: recess 42: contact layer 421 to 423: first contact layer to third contact layer 50: terminal 60: bonding layer 71: base material 711: substrate 712: conductive portion z: first direction x: second direction y: third direction

Claims

1. A semiconductor element comprising: a main body including a semiconductor layer; an electrode located on one side of the main body in a first direction and electrically connected to the semiconductor layer; a first contact layer and a second contact layer electrically connected to the electrode; and a terminal located on the opposite side of the electrode with respect to the first contact layer in the first direction and electrically connected to the first contact layer and the second contact layer, wherein the first contact layer and the second contact layer are separated from each other in a direction orthogonal to the first direction, and when viewed in the first direction, the terminal overlaps each of the first contact layer and the second contact layer.

2. The semiconductor element according to claim 1, wherein when viewed in the first direction, the area of each of the first contact layer and the second contact layer is smaller than the area of the terminal.

3. The semiconductor element according to claim 2, wherein when viewed in the first direction, the terminal overlaps the entire area of each of the first contact layer and the second contact layer.

4. The semiconductor element according to claim 2, wherein when viewed in the first direction, the first contact layer protrudes outward from the terminal.

5. The semiconductor element according to claim 4, wherein when viewed in the first direction, the second contact layer protrudes outward from the terminal.

6. The semiconductor element according to claim 2, further comprising a third contact layer electrically connected to the electrode, wherein the third contact layer is separated from the first contact layer in a direction orthogonal to the first direction, when viewed in the first direction, the terminal overlaps the third contact layer, and the area of the third contact layer is smaller than the area of the terminal when viewed in the first direction.

7. The semiconductor element according to any one of claims 2 to 6, wherein the first contact layer and the second contact layer are electrically connected to the electrode.

8. The semiconductor element according to claim 7, further comprising a first protective film located on the same side as the electrode with respect to the main body and covering a part of the electrode and the main body, wherein the first protective film penetrates in the first direction and has a plurality of first openings exposing the electrode, and at least a part of each of the first contact layer and the second contact layer is individually accommodated in the plurality of first openings.

9. The semiconductor device according to claim 8, wherein the first protective film contains at least one of silicon dioxide and silicon nitride.

10. When viewed in the first direction, each periphery of the plurality of first openings includes a first edge and a second edge extending in a direction orthogonal to the first direction, and a first connecting edge connecting the first edge and the second edge, wherein the direction in which the second edge extends is different from the direction in which the first edge extends, and the first connecting edge is curved. The semiconductor device according to claim 9.

11. When viewed in the first direction, the first connecting edge is away from the extension line of the first edge and the extension line of the second edge. The semiconductor device according to claim 10.

12. The length of the second edge is less than or equal to the length of the first edge, and the radius of curvature of the first connecting edge is 20% or more of the length of the first edge. The semiconductor device according to claim 11.

13. The first protective film has a covering portion covering the electrode. When viewed in the first direction, the whole of the covering portion overlaps the electrode, and the dimension of the covering portion in the first direction is larger than the dimension of the electrode in the first direction. The semiconductor device according to claim 9.

14. Further comprising a second protective film covering the first protective film, and a rewiring located between the first contact layer and the terminal in the first direction, wherein the rewiring is electrically connected to the first contact layer, the second contact layer and the terminal, and the second protective film includes a portion sandwiched between the first protective film and the rewiring. The semiconductor device according to claim 9.

15. The semiconductor device according to claim 14, wherein the second protective film is received in each of the plurality of first openings and includes a portion in contact with the first protective film.

16. Further comprising a third protective film covering the second protective film and the rewiring, wherein the third protective film is in contact with the terminal, and the terminal is exposed from the third protective film. The semiconductor device according to claim 15.

17. The third protective film has a second opening penetrating in the first direction and exposing the rewiring, and a part of the terminal is received in the second opening. The semiconductor device according to claim 16.

18. A part of the terminal protrudes from the second opening, and when viewed in the first direction, the terminal protrudes outward from the second opening. The semiconductor device according to claim 17.

19. The semiconductor device according to claim 18, further comprising a bonding layer electrically connected to the terminal, wherein the bonding layer is located on the side opposite to the rewiring with respect to the terminal, and a melting point of the bonding layer is lower than a melting point of the terminal.

20. A semiconductor device comprising: the semiconductor device according to claim 7; and a base material including a conductive portion, wherein the semiconductor device is mounted on the base material, and the terminal is conductively bonded to the conductive portion.

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