Optical sensing module and electronic device

By introducing a transparent conductive layer into the optical sensing module to shield the interfering signal, the problem of signal interference after the optical sensing module is integrated with the screen module is solved, and the accuracy of electrical signal and optical signal recognition are improved.

WO2025152769A1PCT designated stage expired Publication Date: 2025-07-24SHENZHEN GOODIX TECH CO LTD
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Patent Information

Application Number
PCT/CN2024/144442
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-06-17
Filing Date
2024-12-31
Publication Date
2025-07-24

AI Technical Summary

Technical Problem

After the existing optical sensing module is integrated with the screen module, it is easy to generate electrical signal interference, resulting in a decrease in signal-to-noise ratio performance and a decrease in optical signal recognition accuracy.

Method used

A transparent conductive layer is introduced into the optical sensing module, through which the interfering signal is shielded, to avoid signal interference between the optical sensing module and other modules, and to improve the accuracy of the electrical signal.

Benefits of technology

It effectively reduces signal interference, improves the accuracy of electrical signals generated by the optical sensing module and the accuracy of optical signal recognition.

✦ Generated by Eureka AI based on patent content.

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Abstract

Disclosed in the present application are an optical sensing module and an electronic device. The optical sensing module comprises a substrate, a light-shielding layer, one or more optical sensing chips, a light-transmitting layer and a transparent conductive layer, wherein the one or more optical sensing chips are arranged above the substrate; the light-shielding layer covers the portion of the one or more optical sensing chips that is not attached to the substrate and the light-transmitting layer, and the light-shielding layer covers the portion of the light-transmitting layer that excludes a second surface and is not attached to the one or more optical sensing chips; the transparent conductive layer is attached to the second surface of the light-transmitting layer, and the transparent conductive layer is electrically connected to a ground wire in the substrate; and the transparent conductive layer is used for shielding interference signals affecting the one or more optical sensing chips. By means of providing a transparent conductive layer, the present application can improve the precision of electrical signals generated by an optical sensing module.
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Description

Optical sensing modules and electronic devices

[0001] This application claims priority to the utility model application with application date of January 19, 2024, application number "202420136479.0", and patent name "Optical sensing module and electronic device", and the invention application with application date of June 17, 2024, application number "202410781766.1", and patent name "Chip packaging structure and electronic device", all of which are incorporated herein by reference. Technical Field

[0002] The present application relates to the technical field of electrical components, and in particular to an optical sensing module and an electronic device. Background Art

[0003] The increasing thinness, full-screen nature, and narrow-frame nature of mobile phones and other electronic products have become the mainstream development direction of electronic products. Under this mainstream design environment, the space left for optical sensing modules is getting smaller and smaller. Therefore, the demand for system-integrated products of under-screen ambient optical sensing modules and proximity optical sensing modules is becoming more and more urgent.

[0004] However, the increasing integration of products will also cause signal interference problems between subsystems. For example, the coupling of the electrical signal of the screen module and the optical sensing module will generate interference signals.

[0005] With the development of high-end consumer electronics and optical sensors, the demand for optical sensor system integration installed under mobile phone screens is becoming increasingly strong, and the demand for the accuracy of optical signal recognition is becoming increasingly higher.

[0006] As can be seen, existing optical sensor transparent packaging system integration solutions suffer from electrical noise interference between subsystems and optical interference caused by light reflection within the fully transparent package. Electrical noise interference leads to high device operating noise, degrading the device's signal-to-noise ratio (SNR) performance and affecting the accuracy of optical signal recognition. Optical interference distorts the actual optical signal data, reducing the accuracy of optical signal recognition. Summary of the Invention

[0007] In view of this, the present application provides an optical sensing module and an electronic device to solve the technical problem that the coupling of the electrical signal of the screen module and the optical sensing module in the traditional solution will generate interference signals.

[0008] In a first aspect, the present application provides an optical sensing module, comprising: a substrate, a light-shielding layer, one or more optical sensor chips, a light-transmitting layer and a transparent conductive layer; the one or more optical sensor chips are arranged above the substrate; the light-shielding layer covers the portion of the one or more optical sensor chips that is not bonded to the substrate and the light-transmitting layer, and the light-shielding layer covers the portion of the light-transmitting layer other than the second surface that is not bonded to the one or more optical sensor chips, wherein the first surface of the light-transmitting layer is opposite to the second surface; the transparent conductive layer is bonded to the second surface of the light-transmitting layer, and the transparent conductive layer is electrically connected to the ground wire in the substrate; the transparent conductive layer is used to shield interference signals of the one or more optical sensor chips; the one or more optical sensor chips are used to generate corresponding electrical signals according to the light signal that reaches the sensing area through the transparent conductive layer and the light-transmitting layer.

[0009] A second aspect of the present application provides an electronic device, comprising: an optical sensing module and a screen module as described in any one of the first aspects above.

[0010] The optical sensing module provided in the present application provides a transparent conductive layer in the optical sensing module. When the optical sensing module is integrated with other modules, interference signals can be shielded by the transparent conductive layer to avoid signal interference between the optical sensing module and other modules, thereby improving the accuracy of the electrical signal generated by the optical sensing module. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments recorded in the embodiments of the present application. For ordinary technicians in this field, other drawings can also be obtained based on these drawings.

[0012] FIG1 is a cross-sectional view of the structure of an optical sensing module according to an embodiment of the present application;

[0013] FIG2 is a cross-sectional view of the structure of an optical sensing module according to another embodiment of the present application;

[0014] FIG3 is a schematic structural diagram of an optical sensing module according to an embodiment of the present application;

[0015] FIG4 is a cross-sectional view of the structure of an optical sensing module according to another embodiment of the present application;

[0016] FIG5 is a schematic structural diagram of an optical sensing module according to another embodiment of the present application;

[0017] FIG6 is a cross-sectional view of the structure of an optical sensing module according to another embodiment of the present application;

[0018] FIG7 is a cross-sectional view of the structure of an optical sensing module including a processing chip and a bonding film according to an embodiment of the present application;

[0019] FIG8 is a cross-sectional view of the structure of an optical sensing module including an adhesive layer according to an embodiment of the present application;

[0020] FIG9 is a schematic diagram of an electronic device according to an embodiment of the present application;

[0021] FIG10 is a longitudinal cross-sectional view of the optical sensing module according to the first embodiment of the present invention;

[0022] FIG11 is a longitudinal cross-sectional view of an optical sensing module according to a second embodiment of the present invention;

[0023] FIG12 is a longitudinal cross-sectional view of an optical sensing module according to a third embodiment of the present invention;

[0024] FIG13 is a longitudinal cross-sectional view of an optical sensing module according to a fourth embodiment of the present invention;

[0025] FIG14 is a longitudinal cross-sectional view of an optical sensing module according to a fifth embodiment of the present invention;

[0026] FIG15 is a longitudinal cross-sectional view of an optical sensing module according to a sixth embodiment of the present invention;

[0027] FIG16 is a longitudinal cross-sectional view of an optical sensing module according to a seventh embodiment of the present invention;

[0028] FIG. 17 is a longitudinal cross-sectional view of an optical sensing module according to an eighth embodiment of the present invention.

[0029] List of reference numerals: 100: optical sensing module 101: substrate 102: light shielding layer 103: optical sensor chip 104: light-transmitting layer 105: transparent conductive layer 106: first bonding wire 107: conductor 108: processing chip bonding film 109: adhesive layer 110: processing chip 111: second bonding wire 1011: ground wire 1012: first wiring terminal 1013: second wiring terminal 1031: first optical sensor chip 1032: second optical sensor chip 1051: transparent conductive segment 202: metal ball 204: bonding wire 208: first redistribution layer 209: second redistribution layer 2010: conductive member 300: electronic device 301: screen module DETAILED DESCRIPTION

[0030] In order to enable those skilled in the art to better understand the technical solutions in the embodiments of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the embodiments of the present application, all other embodiments obtained by ordinary technicians in this field should fall within the scope of protection of the embodiments of the present application.

[0031] The terms used in this application are for the purpose of describing specific embodiments only and are not intended to limit this application. As used in this application and the appended claims, the singular forms "a," "an," "the," and "the" are intended to include the plural forms, unless the context clearly indicates otherwise. It should also be understood that the term "and / or" as used herein refers to and encompasses any and all possible combinations of one or more of the associated listed items.

[0032] It should be understood that although the terms first, second, third, etc. may be used in this application to describe various information, such information should not be limited to these terms. These terms are only used to distinguish information of the same type from each other. For example, without departing from the scope of this application, first information may also be referred to as second information, and similarly, second information may also be referred to as first information. Depending on the context, the word "if" as used herein may be interpreted as "at the time of" or "when" or "in response to determining".

[0033] An embodiment of the present application provides an optical sensing module, including: a substrate, a light shielding layer, one or more optical sensor chips, a light-transmitting layer, and a transparent conductive layer.

[0034] One or more optical sensor chips are arranged above the substrate, a transparent layer is arranged above the one or more optical sensor chips, a light-shielding layer covers the portion of the one or more optical sensor chips that is not bonded to the substrate and the light-transmitting layer, a transparent conductive layer is arranged above the transparent layer or / and a transparent conductive layer is arranged above the one or more optical sensor chips, and the transparent conductive layer is electrically connected to the ground wire in the substrate.

[0035] The transparent conductive layer is used to shield interference signals from one or more optical sensor chips. The one or more optical sensor chips are used to generate corresponding electrical signals based on the light signals that pass through the transparent conductive layer and the light-transmitting layer and reach the sensing area.

[0036] An optical sensing module can integrate one or more optical sensor chips. Different optical sensor chips can perform the same or different sensing functions. For example, the optical sensor chips can include at least one of an ambient light sensor, a proximity sensor, a color temperature sensor, an image sensor, or a light-emitting chip. Light can sequentially pass through the transparent conductive layer and light-transmitting layer of the optical sensing module to reach the one or more optical sensor chips, enabling the one or more optical sensor chips to perform sensing.

[0037] In an embodiment of the present application, a transparent conductive layer is provided in the optical sensing module. When the optical sensing module is integrated with other modules, the interference signal can be shielded by the transparent conductive layer to avoid signal interference between the optical sensing module and other modules, thereby improving the accuracy of the electrical signal generated by the optical sensing module.

[0038] FIG1 is a cross-sectional view of the structure of an optical sensing module according to an embodiment of the present application. As shown in FIG1 , the optical sensing module 100 includes a substrate 101 , a light shielding layer 102 , one or more optical sensor chips 103 , a light transmitting layer 104 , and a transparent conductive layer 105 .

[0039] The first surfaces of one or more optical sensor chips 103 are bonded to the first surface of the substrate 101. The one or more optical sensor chips 103 are electrically connected to the substrate 101 via first bonding wires 106. The first and second surfaces of the one or more optical sensor chips 103 are opposite each other. The sensing area on the second surface of the one or more optical sensor chips 103 is bonded to the first surface of the light-transmitting layer 104. The light-shielding layer 102 covers the portion of the one or more optical sensor chips 103 that is not bonded to the substrate 101 and the light-transmitting layer 104. The light-shielding layer 102 also covers the portion of the light-transmitting layer 104 that is not bonded to the one or more optical sensor chips 103, excluding the second surface. The first and second surfaces of the light-transmitting layer 104 are opposite each other. A transparent conductive layer 105 is bonded to the light-shielding layer 102 and the second surface of the light-transmitting layer 104. The transparent conductive layer 105 is electrically connected to the ground line in the substrate 101.

[0040] The transparent conductive layer 105 is used to shield interference signals from one or more optical sensor chips 103. The one or more optical sensor chips 103 are used to generate corresponding electrical signals according to the optical signals that pass through the transparent conductive layer 105 and the light-transmitting layer 104 and reach the sensing area.

[0041] One or more optical sensor chips 103 utilize flow-on-wire (FOW) technology to achieve electrical connection to the substrate 101 via first bonding wires 106. For example, one end of the first bonding wire 106 can be electrically connected to a terminal on the one or more optical sensor chips 103, and the other end of the first bonding wire 106 can be electrically connected to a terminal on the first surface of the substrate 101, thereby achieving electrical connection between the one or more optical sensor chips 103 and the substrate 101. The substrate 101 can be a printed circuit board used for packaging, having circuitry therein. The one or more optical sensor chips 103 transmit electrical signals generated when sensing light signals to the substrate 101 via the first bonding wires 106. The substrate 101 is then interconnected to external signals via terminals or solder balls.

[0042] It should be noted that, in the embodiment of the present application, the sensing areas on the second surfaces of the one or more optical sensor chips 103 are bonded to the first surface of the light-transmitting layer 104, but this is not limited to the sensing areas on the second surfaces of the one or more optical sensor chips 103 being bonded to the first surface of the light-transmitting layer 104. Since the optical sensing module 100 may be used in one or more light sources, to prevent excessive light signals other than those intended to reach the one or more optical sensor chips 103 from passing through the light-transmitting layer 104 and reaching the one or more optical sensor chips 103, the area of ​​the first surface of the light-transmitting layer 104 cannot be set too large. Consequently, when the optical sensing module 100 includes multiple or one optical sensor chips 103, due to the limited area of ​​the first surface of the light-transmitting layer 104, not all of the second surfaces of the multiple or one optical sensor chips 103 may be bonded to the first surface of the light-transmitting layer 104. Therefore, it is sufficient that the sensing areas on the second surfaces of the multiple or one optical sensor chips 103 are bonded to the first surface of the light-transmitting layer 104. However, if the optical sensing module 100 includes a small number of one or more optical sensor chips 103 or only includes one or more optical sensor chips 103, and the area of ​​the second surface of the one or more optical sensor chips 103 is small, the second surface of the one or more optical sensor chips 103 can be completely adhered to the first surface of the light-transmitting layer 104.

[0043] To address signal interference between the optical sensing module 100 and other modules, such as the screen module, due to increasing integration, a transparent conductive layer 105 is provided in the optical sensing module 100. The transparent conductive layer 105 can be made of an organic or inorganic conductive coating or printed material, such as silver tin oxide. For example, in the scenario where the optical sensing module 100 and the screen module couple to generate interference signals, at a certain moment, the screen module generates an electrical signal, and the optical sensing module 100 also generates a corresponding electrical signal based on the light signal that reaches the sensing area through the transparent conductive layer 105 and the light-transmitting layer 104. Due to the high integration of the optical sensing module 100 and the screen module, the optical sensing module 100 and the screen module couple, and both the electrical signals generated by the optical sensing module 100 and the screen module may be affected, resulting in reduced electrical signal accuracy. At this time, since a transparent conductive layer 105 is provided in the optical sensing module 100, the transparent conductive layer 105 is provided between the optical sensing module 100 and the screen module, and the transparent conductive layer 105 is electrically connected to the ground line in the substrate 101, the transparent conductive layer 105 will introduce the interference signal caused by the screen module to the optical sensing module 100 when generating an electrical signal into the ground line in the substrate 101 and flow it out. At the same time, the transparent conductive layer 105 will also introduce the interference signal caused by the optical sensing module 100 to the screen module when generating an electrical signal into the ground line in the substrate 101.

[0044] In an embodiment of the present application, a transparent conductive layer 105 is provided in the optical sensing module 100. When the optical sensing module 100 is integrated with other modules, interference signals can be shielded by the transparent conductive layer 105, thereby avoiding signal interference between the optical sensing module 100 and other modules, thereby improving the accuracy of the electrical signal generated by the optical sensing module 100.

[0045] FIG2 is a cross-sectional view of the structure of an optical sensing module according to another embodiment of the present application. As shown in FIG2 , optical sensing module 100 further includes a processing chip 110. A first surface of processing chip 110 is bonded to a first surface of substrate 101. A light shielding layer 102 covers portions of processing chip 110 that are not bonded to substrate 101 and light-transmitting layer 104. Processing chip 110 and substrate 101 are electrically connected via second bonding wires 111.

[0046] In the embodiment of the present application, by adding a processing chip 110 to the optical sensing module 100, a control chip, a light intensity sensing chip, a color temperature sensing chip, or other chips can be selected according to different scenarios to meet different needs, thereby improving the applicability of the optical sensing module 100.

[0047] In a possible implementation, the light shielding layer 102 is made of opaque black EMC (Epoxy Molding Compound).

[0048] In some scenarios, the light shielding layer 102 can transmit optical signals. When the optical signals pass through the light shielding layer 102 and reach the sensing area located on the second surface of one or more optical sensor chips 103, one or more optical sensor chips 103 may mistakenly sense and generate electrical signals. To avoid this, the light shielding layer 102 can be made of an epoxy molding compound (EMC) using an epoxy resin as a matrix and adding various additives, including black dye and materials that increase structural strength. When the light shielding layer 102 is opaque black, the optical signals can only pass through the transparent conductive layer 105 and the light-transmitting layer 104 to reach the sensing area of ​​one or more optical sensor chips 103.

[0049] In the embodiment of the present application, by setting the light shielding layer 102 to an opaque black color, it is possible to prevent unnecessary light signals from passing through the light shielding layer 102 and reaching the sensing area located on the second surface of the one or more optical sensor chips 103, thereby ensuring the accuracy of the electrical signals generated by the one or more optical sensor chips 103 based on the light signals. Furthermore, because the epoxy resin molding compound includes a material that increases structural strength, it can reduce the effects of deformation such as warping caused by stress, or the effects of heat generated by the one or more optical sensor chips 103 on the structure of the light shielding layer 102, thereby improving the structural strength of the optical sensing module 100.

[0050] In a possible implementation, the surface where the light shielding layer 102 and the transparent conductive layer 105 are attached is flush with the second surface of the light-transmitting layer 104 .

[0051] When the surface where the light-shielding layer 102 and the transparent conductive layer 105 are bonded is not flush with the second surface of the light-transmitting layer 104, the surface where the transparent conductive layer 105 is bonded to both the light-shielding layer 102 and the light-transmitting layer 104 will be in a convex or concave shape, which will cause difficulty in assembly when the optical sensing module 100 is integrated with other modules. Therefore, the surface where the light-shielding layer 102 and the transparent conductive layer 105 are bonded is flush with the second surface of the light-transmitting layer 104, so that the surface where the transparent conductive layer 105 is bonded to both the light-shielding layer 102 and the light-transmitting layer 104 can be flat.

[0052] In the embodiment of the present application, by setting the surface where the light-shielding layer 102 and the transparent conductive layer 105 are bonded to be flush with the second surface of the light-transmitting layer 104, the surface where the transparent conductive layer 105 is bonded to both the light-shielding layer 102 and the light-transmitting layer 104 is flat, which facilitates the integration of the optical sensing module 100 with other modules.

[0053] In a possible implementation, the light transmittance of the transparent conductive layer 105 is greater than 90%.

[0054] In the embodiment of the present application, by setting the transmittance of the transparent conductive layer 105 to be greater than 90%, the loss of the light signal when passing through the transparent conductive layer 105 can be reduced, and when the transmittance of the transparent conductive layer 105 is only required to be greater than 90%, the cost of manufacturing the transparent conductive layer 105 will not be too high.

[0055] FIG3 is a schematic structural diagram of an optical sensing module according to one embodiment of the present application, and FIG4 is a cross-sectional structural diagram of an optical sensing module according to another embodiment of the present application. As shown in FIG4 , in the optical sensing module 100, the transparent conductive layer 105 is electrically connected to the ground line 1011 in the substrate 101 through a conductor 107, such as a circuit board, a third bonding wire, or a conductive column.

[0056] In the optical sensing module 100 shown in Figures 3 and 4, the transparent conductive layer 105 is not attached to the side of the substrate 101. Therefore, in order for the transparent conductive layer 105 to guide the interference signal into the substrate 101, a circuit board, a third bonding wire, or a conductive pillar can be provided through the light shielding layer 102. One end of the circuit board, the third bonding wire, or the conductive pillar is connected to the transparent conductive layer 105, and the other end of the circuit board, the third bonding wire, or the conductive pillar is electrically connected to the ground line 1011 in the substrate 101. The circuit board can be a printed circuit board (PCB), specifically a single-sided circuit board, a double-sided circuit board, a multi-layer circuit board, etc. The conductive pillar can be a copper pillar.

[0057] In the embodiment of the present application, when the transparent conductive layer 105 is electrically connected to the ground line 1011 in the substrate 101 via a third bonding wire, the manufacturing cost of the optical sensing module 100 can be reduced due to the low cost of the third bonding wire. When the transparent conductive layer 105 is electrically connected to the ground line 1011 in the substrate 101 via a conductive post, the conductive post's high conductivity can improve the anti-interference capability of the transparent conductive layer 105. When the transparent conductive layer 105 is electrically connected to the ground line 1011 in the substrate 101 via a circuit board, the structural strength of the circuit board can be further improved, thereby further improving the structural strength of the optical sensing module 100.

[0058] Figure 5 is a structural schematic diagram of an optical sensing module according to another embodiment of the present application, and Figure 6 is a structural cross-sectional diagram of an optical sensing module according to yet another embodiment of the present application. As shown in Figures 5-6, in the optical sensing module 100, the side surface of the substrate 101 is bonded to the transparent conductive layer 105, and the surface of the light-shielding layer 102 that is not bonded to one or more optical sensor chips 103, the light-transmitting layer 104 or the substrate 101 is bonded to the transparent conductive layer 105, wherein the first surface of the substrate 101 is opposite to the second surface, and the side surface of the substrate 101 is perpendicular to the first and second surfaces of the substrate 101.

[0059] In the optical sensing module 100 , the transparent conductive layer 105 is attached to the side of the substrate 101 . For example, a plurality of first connection terminals 1012 may be provided on the side of the substrate 101 , so that the transparent conductive layer 105 is directly electrically connected to the substrate 101 .

[0060] In the embodiment of the present application, by setting the side surface of the substrate 101 to be in contact with the transparent conductive layer 105, the portion of the light-shielding layer 102 that is not in contact with one or more optical sensor chips 103 or the light-transmitting layer 104 or the substrate 101 is in contact with the transparent conductive layer 105, thereby expanding the area covered by the transparent conductive layer 105, thereby improving the anti-interference ability of the optical sensing module 100.

[0061] As shown in FIG. 6 , the transparent conductive layer 105 is provided with a through hole for the second connection terminal 1013 located on the side surface of the substrate 101 to pass through.

[0062] A plurality of second connection terminals 1013 are provided on the side surface of the substrate 101 . The second connection terminals 1013 may be copper pillars. The substrate 101 may communicate with the outside through the second connection terminals 1013 passing through the transparent conductive layer 105 .

[0063] In the embodiment of the present application, a through hole is opened in the transparent conductive layer 105 to allow the second connection terminal 1013 to pass through, thereby enabling the substrate 101 to communicate with the outside.

[0064] FIG7 is a schematic diagram of the structure of an optical sensing module including a processing chip bonding film according to an embodiment of the present application. As shown in FIG7 , in the optical sensing module 100, the first surface of the light-transmitting layer 104 is bonded to the sensing area via the processing chip bonding film 108. The light transmittance of the processing chip bonding film 108 is greater than or equal to the light transmittance of the light-transmitting layer 104.

[0065] The die attach film 108 (DAF) can be a film made of epoxy resin with high light transmittance and has adhesiveness at room temperature or high temperature. When the light-transmitting layer 104 is attached to one or more optical sensor chips 103, the die attach film 108 is smeared or sprayed between the light-transmitting layer 104 and one or more optical sensor chips 103, and the die attach film 108 is baked to produce a chemical reaction and solidify.

[0066] In this embodiment of the present application, the light-transmitting layer 104 is bonded to the sensing areas on the second surfaces of one or more optical sensor chips 103 via the processing chip bonding adhesive film 108, thereby improving bonding strength and preventing detachment. Furthermore, because the light transmittance of the processing chip bonding adhesive film 108 is greater than or equal to the light transmittance of the light-transmitting layer 104, the processing chip bonding adhesive film 108 does not affect the optical signal from reaching the sensing areas on the second surfaces of the one or more optical sensor chips 103.

[0067] In one possible implementation, the first bonding wire 106 includes a first portion and a second portion that are electrically connected. The first portion of the first bonding wire 106 is connected to a terminal located on the second surface of the one or more optical sensor chips 103 and passes through the interior of the processing chip bonding film 108. The second portion of the first bonding wire 106 passes through the light shielding layer 102 and is connected to a terminal on the substrate 101.

[0068] In the embodiment of the present application, by setting the first bonding wire 106 to pass through the interior of the processing chip bonding film 108 and then through the light shielding layer 102, the first bonding wire 106 can be fixed by the processing chip bonding film 108 and the light shielding layer 102 respectively, thereby improving the safety of the optical sensing module 100.

[0069] Figure 8 is a structural schematic diagram of the optical sensing module of the present application including a second chip bonding film or silver glue. As shown in Figure 8, in the optical sensing module 100, the first surface of one or more optical sensor chips 103 is bonded to the first surface of the substrate 101 through an adhesive layer 109, such as a second chip bonding film or silver glue, and the second chip bonding film and silver glue are non-conductive.

[0070] The second die attach film (DAF) can be a film made of epoxy resin and has adhesive properties at room temperature or high temperature. The silver glue can be a viscous colloid formed by bonding silver materials together through the bonding effect of a matrix resin.

[0071] In the embodiment of the present application, one or more optical sensor chips 103 are bonded to the first surface of the substrate 101 via a non-conductive second chip bonding film or silver glue, which can improve the bonding strength and prevent falling off.

[0072] FIG9 is a schematic diagram of an electronic device according to an embodiment of the present application. As shown in FIG9 , the electronic device 300 includes the optical sensing module 100 and the screen module 301 as described in any of the aforementioned embodiments.

[0073] It should be noted that the electronic device 300 in the embodiment of the present application is a specific application of the optical sensing module 100 in the aforementioned embodiment in various electronic products (such as smart phones and tablet computers, etc.). The optical sensing module 100 in the specific electronic device can be found in the description in the aforementioned optical sensing module embodiment, and will not be repeated here.

[0074] In an embodiment of the present application, a transparent conductive layer is provided in the optical sensing module 100. When the optical sensing module 100 is integrated with the screen module 301, the interference signal generated when the screen module 301 and the optical sensing module 100 are coupled can be shielded by the transparent conductive layer, thereby avoiding signal interference between the optical sensing module 100 and the screen module 301, and improving the accuracy of the electrical signals generated by the optical sensing module 100 and the screen module 301.

[0075] This embodiment specifically discloses an optical sensing module, as shown in Figures 10-17, including a substrate 101, one or more optical sensor chips 103, a processing chip 110 and a light shielding layer 102. The substrate 101 of this embodiment is provided with a circuit, which serves as a carrier of the package and can be interconnected with external signals. In this embodiment, the substrate 101 is a PCB substrate.

[0076] One or more optical sensor chips 103 are flip-chip mounted on the substrate 101 and / or the processing chip 110 , and the one or more optical sensor chips 103 are electrically connected to the substrate 101 and / or the processing chip 110 thereunder.

[0077] When there is only one optical sensor chip 103, one optical sensor chip 103 can be flip-chip mounted on the substrate 101 or on the processing chip 110; when there are multiple optical sensor chips 103, some of the optical sensor chips 103 can be flip-chip mounted on the substrate 101 and the remaining optical sensor chips 103 can be flip-chip mounted on the processing chip 110, or all of the optical sensor chips 103 can be flip-chip mounted on the substrate 101, or all of the optical sensor chips 103 can be flip-chip mounted on the processing chip 110.

[0078] One or more optical sensor chips 103 are provided with second through-silicon vias (TSVs), which are electrically connected to the processing chip 110 and / or the substrate 101, thereby electrically connecting the one or more optical sensor chips 103 to the substrate 101 and / or the processing chip 110. The one or more optical sensor chips 103 are devices that transmit optical signals to and from the outside world. The one or more optical sensor chips 103 include at least one of an ambient light sensor, a proximity sensor, a color temperature sensor, an image sensor, or a light-emitting chip. The number and type of optical sensor chips 201 are determined as needed.

[0079] As an optional embodiment, as shown in Figures 10-17, the optical sensor chip 103 includes a first optical sensor chip 1031 and a second optical sensor chip 1032. The first optical sensor chip 1031 and the second optical sensor chip 1032 include an ambient light sensor and a proximity sensor. The relative positions of the first optical sensor chip 1031 and the second optical sensor chip 1032 are not specifically limited and can be set as needed.

[0080] Processing chip 110 is embedded in substrate 101 (as shown in Figures 10, 11, 15, 16, and 17), flip-chip mounted on substrate 101 (as shown in Figures 12 and 13), or fixed on substrate 101 (as shown in Figure 14). Processing chip 110 is electrically connected to substrate 101. Processing chip 110 includes at least one of an analog front-end chip, a control chip, or a signal processing chip. The type of processing chip 110 is selected based on actual needs.

[0081] Optionally, as shown in Figures 10, 15, 16 and 17, when the processing chip 110 is buried in the substrate 101, a first redistribution layer 208 is provided on the top layer of the substrate 101, and the first redistribution layer 208 is arranged above the processing chip 110, and the first redistribution layer 208 is electrically connected to the pads of the processing chip 110. The first redistribution layer 208 distributes the electrical signal connection points on the surface of the substrate 101. The first redistribution layer 208 is electrically connected to all the pads of the processing chip 110, thereby realizing the interconnection between the substrate 101 and the processing chip 110. The first optical sensor chip 1031 and the second optical sensor chip 1032 are flip-chip mounted on the substrate 101. The first redistribution layer 208 is welded to the metal balls 202 above it, and the metal balls 202 are welded to the flip-chip first optical sensor chip 1031 and the second optical sensor chip 1032, thereby realizing electrical connectivity between the processing chip 110 and the substrate 101 and the first optical sensor chip 1031 and the second optical sensor chip 1032, thereby completing system integration.

[0082] Optionally, second through-silicon vias (TSVs) are provided on both the first optical sensor chip 1031 and the second optical sensor chip 1032, electrically connecting the second TSVs to the processing chip 110 and the substrate 101. The second TSVs on the first optical sensor chip 1031 direct electrical signals from the bonding pads of the first optical sensor chip 1031 to the underside of the first optical sensor chip 1031. A third redistribution layer (RDL) is provided on the lower surface of the first optical sensor chip 1031, electrically connected to the second TSVs. The third RDL layer on the lower surface of the first optical sensor chip 1031 is soldered to the first RDL layer 208 via metal balls 202. A second through-silicon via (TSV) on the second optical sensor chip 1032 directs electrical signals from the bonding pad of the second optical sensor chip 1032 to the underside of the second optical sensor chip 1032. A third redistribution layer (RDL) is provided on the lower surface of the second optical sensor chip 1032. The third RDL layer is electrically connected to the second TSV. The third RDL layer on the lower surface of the second optical sensor chip 1032 is soldered to the first RDL layer 208 via metal balls 202. The third RDL layer includes RDL traces and RDL pads. The RDL traces are connected to the second TSVs and RDL pads, respectively. The RDL pads are soldered to the first RDL layer 208 via metal balls 202.

[0083] In this embodiment, the metal balls 202 may be solder balls. The one or more optical sensor chips 103 are packaged using a TSV (Through Silicon Via) process. Through silicon via (TSV) technology and metal redistribution technology are used to route electrical signals from pads on the surface of the one or more optical sensor chips 103 to the metal balls 202 on the back of the one or more optical sensor chips 103. This eliminates the need for wire bonds to electrically connect the one or more optical sensor chips 103 to the processing chip 110 and the substrate 101.

[0084] The embodiments shown in Figures 10, 15, 16 and 17 completely omit the bonding wires, further reducing the electrical noise interference between the bonding wires and the screen, and improving the accuracy of optical signal recognition.

[0085] Optionally, as shown in Figure 11, when the processing chip 110 is buried in the substrate 101, a second redistribution layer 209 is provided on the top layer of the substrate 101, and the second redistribution layer 209 is arranged above the processing chip 110. The second redistribution layer 209 is electrically connected to some of the pads of the processing chip 110, and the remaining pads of the processing chip 110 are electrically connected to the substrate 101 through welding wires 204.

[0086] Specifically, one end of the bonding wire 204 is connected to the remaining pads of the processing chip 110, and the other end of the bonding wire 204 is connected to the second redistribution layer 209. The second redistribution layer 209 distributes the electrical signal connection points on the surface of the substrate 101. The second redistribution layer 209 is electrically connected to some of the pads of the processing chip 110. After the processing chip 110 is embedded in the substrate 101, some of the pads of the processing chip 110 are exposed. The exposed pads of the processing chip 110 are connected to the second redistribution layer 209 through the bonding wire 204. Specifically, one end of the bonding wire 204 is connected to the exposed pads of the processing chip 110, and the other end of the bonding wire 204 is connected to the second redistribution layer 209. 9 and the bonding wires 204 realize the interconnection between the substrate 101 and the processing chip 110; the first optical sensor chip 1031 and the second optical sensor chip 1032 are flip-chip mounted on the substrate 101, the second redistribution layer 209 is welded to the metal balls 202 above it, and the metal balls 202 are welded to the flip-chip first optical sensor chip 1031 and the second optical sensor chip 1032, thereby realizing electrical connection between the processing chip 110 and the substrate 101 and the first optical sensor chip 1031 and the second optical sensor chip 1032, thereby completing system integration.

[0087] Optionally, a second through-silicon via (TSV) is provided on both the first optical sensor chip 1031 and the second optical sensor chip 1032, electrically connected to the processing chip 110 and the substrate 101. A third redistribution layer is provided on the lower surface of the first optical sensor chip 1031, electrically connected to the second TSV. The third redistribution layer on the lower surface of the first optical sensor chip 1031 is soldered to the second redistribution layer 209 via metal balls 202. A third redistribution layer is provided on the lower surface of the second optical sensor chip 1032, electrically connected to the second TSV. The third redistribution layer on the lower surface of the second optical sensor chip 1032 is soldered to the second redistribution layer 209 via metal balls 202. One or more optical sensor chips 103 adopt TSV packaging technology, and through silicon via technology and metal rewiring technology are used to lead the electrical signals of the pads on the surface of one or more optical sensor chips 103 to the metal balls 202 on the back of one or more optical sensor chips 103, eliminating the need for bonding wires to achieve electrical connection between one or more optical sensor chips 103 and the processing chip 110 and the substrate 101.

[0088] Compared with the prior art, the embodiment shown in FIG11 still greatly reduces the number of bonding wires, further reduces the electrical noise interference between the bonding wires and the screen, and improves the accuracy of optical signal recognition.

[0089] Optionally, as shown in Figures 12 and 13, when the processing chip 110 is flip-chip mounted on the substrate 101, a first through-silicon via is provided on the processing chip 110, and the first through-silicon via is electrically connected to the substrate 101. Specifically, a fourth redistribution layer is provided on the lower surface of the processing chip 110, and the fourth redistribution layer is electrically connected to the first through-silicon via. The fourth redistribution layer is welded to the substrate 101 via metal balls 202. The first through-silicon via provided on the processing chip 110 leads the electrical signals from the pads of the processing chip 110 to the bottom of the processing chip 110. The fourth redistribution layer on the lower surface of the processing chip 110 includes redistribution traces and redistribution pads, and the redistribution traces are respectively connected to the first through-silicon via and the redistribution pads, and the redistribution pads are welded to the substrate 101 via metal balls 202. The processing chip 110 adopts the TSV packaging process, and through the silicon via technology and metal rewiring technology, the electrical signal of the pad on the surface of the processing chip 110 is led to the metal ball 202 on the back of the processing chip 110, eliminating the welding wire for realizing electrical connection between the processing chip 110 and the substrate 101, and reducing the electrical noise interference between the welding wire and the screen.

[0090] When the processing chip 110 is flip-chip mounted on the substrate 101 , one or more optical sensor chips 103 are flip-chip mounted on the processing chip 110 and / or the substrate 101 .

[0091] Optionally, in the embodiment shown in FIG12 , the first optical sensor chip 1031 and the second optical sensor chip 1032 are both flip-chip mounted on the substrate 101, and the first optical sensor chip 1031 and the second optical sensor chip 1032 are electrically connected to the substrate 101. A second through-silicon via (TSV) is defined on each of the first optical sensor chip 1031 and the second optical sensor chip 1032, and the second TSV is electrically connected to the substrate 101. A third redistribution layer is defined on the lower surface of the first optical sensor chip 1031, and the third redistribution layer is electrically connected to the second TSV. The third redistribution layer on the lower surface of the first optical sensor chip 1031 is soldered to the substrate 101 via metal balls 202. A third redistribution layer is defined on the lower surface of the second optical sensor chip 1032, and the third redistribution layer is electrically connected to the second TSV. The third redistribution layer on the lower surface of the second optical sensor chip 1032 is soldered to the substrate 101 via metal balls 202. One or more optical sensor chips 103 also adopt the TSV packaging process. Through silicon via technology and metal rewiring technology, the electrical signals of the pads on the surface of one or more optical sensor chips 103 are led to the metal balls 202 on the back of one or more optical sensor chips 103. The metal balls 202 are electrically connected to the substrate 101, eliminating the need for bonding wires to achieve electrical connection between the one or more optical sensor chips 103 and the substrate 101.

[0092] Alternatively, in the embodiment shown in FIG13 , a first optical sensor chip 1031 is flip-chip mounted on the processing chip 110, and a second optical sensor chip 1032 is flip-chip mounted on the substrate 101. A second through-silicon via (TSV) is defined on the first optical sensor chip 1031 and electrically connected to the processing chip 110, while a second through-silicon via (TSV) is defined on the second optical sensor chip 1032 and electrically connected to the substrate 101. A third redistribution layer (RDI) is defined on the bottom surface of the first optical sensor chip 1031 and electrically connected to the second TSV. The third RDI layer on the bottom surface of the first optical sensor chip 1031 is soldered to the processing chip 110 via metal balls 202. A third RDI layer is defined on the bottom surface of the second optical sensor chip 1032 and electrically connected to the second TSV. The third RDI layer on the bottom surface of the second optical sensor chip 1032 is soldered to the substrate 101 via metal balls 202. One or more optical sensor chips 103 utilize TSV packaging technology. Through-silicon via (TSV) and metal rewiring techniques are used to route electrical signals from pads on the surface of one or more optical sensor chips 103 to metal balls 202 on the back of one or more optical sensor chips 103. Metal balls 202 then electrically connect the chips to the processing chip 110 and substrate 101, eliminating the need for wirebonds to electrically connect the one or more optical sensor chips 103 to the processing chip 110 and substrate 101. In other embodiments, both the first optical sensor chip 1031 and the second optical sensor chip 1032 can be flip-chip mounted on the processing chip 110.

[0093] The embodiments shown in Figures 12 and 13 completely omit wire bonds, further reducing electrical noise interference between the wires and the screen, thereby improving the accuracy of optical signal recognition. Furthermore, in the embodiment shown in Figure 13, the first optical sensor chip 1031 is vertically stacked with the processing chip 110, miniaturizing the integrated package in both the X and Y dimensions.

[0094] Optionally, as shown in FIG14 , when the processing chip 110 is fixed above the substrate 101, the processing chip 110 is electrically connected to the substrate 101 via bonding wires 204. One or more optical sensor chips 103 are flip-chip mounted on the processing chip 110 and / or the substrate 101. A first optical sensor chip 1031 is flip-chip mounted on the processing chip 110, and a second optical sensor chip 1032 is flip-chip mounted on the substrate 101. The first optical sensor chip 1031 is provided with a second through-silicon via (TSV) electrically connected to the processing chip 110. The second optical sensor chip 1032 is provided with a second TSV electrically connected to the substrate 101. A third redistribution layer is provided on the lower surface of the first optical sensor chip 1031, and the third redistribution layer is electrically connected to the second TSV. The third redistribution layer on the lower surface of the first optical sensor chip 1031 is soldered to the processing chip 110 via metal balls 202. A third redistribution layer is provided on the lower surface of the second optical sensor chip 1032 . The third redistribution layer is electrically connected to the second through silicon via. The third redistribution layer on the lower surface of the second optical sensor chip 1032 is welded to the substrate 101 via metal balls 202 .

[0095] One or more optical sensor chips 103 utilize a TSV packaging process. Through-silicon via (TSV) technology and metal rewiring techniques are used to direct electrical signals from pads on the surface of one or more optical sensor chips 103 to metal balls 202 on the back of one or more optical sensor chips 103. These metal balls 202 electrically connect the chips to the processing chip 110 and substrate 101, eliminating the need for wire bonds that electrically connect the one or more optical sensor chips 103 to the processing chip 110 and substrate 101. In this embodiment, only wire bonds 204 are provided to interconnect the processing chip 110 and substrate 101. This significantly reduces the number of wire bonds compared to existing technologies, thereby minimizing electrical noise interference between the wire bonds and the screen and improving the accuracy of optical signal recognition. Furthermore, the vertical stacking of one or more optical sensor chips 103 and the processing chip 110 allows for miniaturization of the integrated package in the X and Y directions.

[0096] In some embodiments, as shown in Figures 10-17, a light shielding layer 102 is disposed above the substrate 101 and encapsulates one or more optical sensor chips 103 and a processing chip 110. An opening is provided at the top of the light shielding layer 102 corresponding to the location of the one or more optical sensor chips 103. The opening is used to expose the photosensitive area of ​​the one or more optical sensor chips 103 to transmit light. In the embodiments shown in Figures 12-17, openings are provided above both the first optical sensor chip 1031 and the second optical sensor chip 1032. The opening above the first optical sensor chip 1031 exposes the photosensitive area of ​​the first optical sensor chip 1031, and the opening above the second optical sensor chip 1032 exposes the photosensitive area of ​​the second optical sensor chip 1032. Preferably, the light shielding layer 102 is a black EMC (Epoxy Molding Compound) layer or a light-absorbing material layer. The light-shielding layer 102 encapsulates all the chips on the substrate 101. The light-shielding layer 102 wraps the sides of the processing chip 110 and one or more optical sensor chips 103, leaving only the photosensitive areas of the one or more optical sensor chips 103 exposed, thereby eliminating the problem of light reflection inside the transparent package and thereby introducing light signal interference, thereby improving the accuracy of optical signal recognition.

[0097] Optionally, a light-transmitting layer 104 is provided within the opening and is secured above one or more optical sensor chips 103. As shown in Figures 10-17, light-transmitting layers 104 are provided above both the first optical sensor chip 1031 and the second optical sensor chip 1032. The upper surface of the light-transmitting layer 104 is flush with the upper surface of the light-shielding layer 102. The light-transmitting layer 104 also provides protection for the one or more optical sensor chips 103. Preferably, the light-transmitting layer 104 is a transparent layer. More preferably, the light-transmitting layer 104 is a glass layer or a light-transmitting organic layer, wherein the light-transmitting organic layer is a light-transmitting organic resin layer.

[0098] When the light-shielding layer 102 plastic-seales the processing chip 110 and one or more optical sensor chips 103, the light-transmitting layer 104 or the upper surface of one or more optical sensor chips 103 corresponding to the photosensitive area can be exposed through a grinding process; or the light-transmitting layer 104 or the upper surface of one or more optical sensor chips 103 corresponding to the photosensitive area can be directly exposed through an open mold process.

[0099] In some embodiments, as shown in Figures 10-14 and 17 , a transparent conductive layer 105 is provided on the top layer of the optical sensing module, and the transparent conductive layer 105 is electrically connected to the processing chip 110 or the substrate 101. When no light-transmitting layer 104 is provided above one or more optical sensor chips 103, the transparent conductive layer 105 is provided above the light-shielding layer 102 and the one or more optical sensor chips 103; when a light-transmitting layer 104 is provided above one or more optical sensor chips 103, the transparent conductive layer 105 is provided above both the light-shielding layer 102 and the light-transmitting layer 104.

[0100] Optionally, the transparent conductive layer 105 includes at least one of indium tin oxide, indium zinc oxide, transparent conductive ink (primarily composed of the conductive polymer PEDOT), nanosilver, or a metal grid. The transparent conductive layer 105 is applied to the upper surface of the entire optical sensing module by a coating, printing, or spraying process. It is interconnected with the processing chip 110 or the substrate 101 and thus grounded, achieving electrical shielding.

[0101] Optionally, the transparent conductive layer 105 is electrically connected to the processing chip 110 or the substrate 101 via a conductive member 2010 that penetrates the light shielding layer 102. The light shielding layer 102 exposes the top of the conductive member 2010 through a grinding process or an open mold process. The top of the conductive member 2010 is electrically connected to the transparent conductive layer 105, and the bottom of the conductive member 2010 is electrically connected to the processing chip 110 or the substrate 101, thereby achieving grounding and realizing an electrical shielding function. As shown in Figure 10, the top of the conductive member 2010 is electrically connected to the transparent conductive layer 105, and the bottom of the conductive member 2010 is electrically connected to the first redistribution layer 208, thereby achieving electrical connection with the processing chip 110 and the substrate 101. As shown in Figure 11, the top of the conductive member 2010 is electrically connected to the transparent conductive layer 105, and the bottom of the conductive member 2010 is electrically connected to the second redistribution layer 209, thereby achieving electrical connection with the processing chip 110 and the substrate 101. As shown in FIGS. 12 , 13 and 14 , the top end of the conductive element 2010 is electrically connected to the transparent conductive layer 105 , and the bottom end of the conductive element 2010 is electrically connected to the substrate 101 .

[0102] The conductive member 2010 includes at least one of a bonding wire, a metal pillar, or a conductive via. Preferably, the metal pillar is a copper pillar. The conductive via can be formed by first opening a via in the light shielding layer 102 and then filling the via with a conductive material.

[0103] In some embodiments, a transparent conductive layer 105 is provided on the top surface of one or more optical sensor chips 103, and the transparent conductive layer 105 is electrically connected to the one or more optical sensor chips 103. When there are multiple optical sensor chips 103, each optical sensor chip 103 is provided with a transparent conductive layer 105 on its top surface, and the transparent conductive layer 105 is electrically connected to the corresponding optical sensor chip 103 below it. The transparent conductive layer 105 on the top surface of the first optical sensor chip 1031 is electrically connected to the first optical sensor chip 1031, and the transparent conductive layer 105 on the top surface of the second optical sensor chip 1032 is electrically connected to the second optical sensor chip 1032.

[0104] Optionally, when the light-transmitting layer 104 is not disposed above one or more optical sensor chips 103 , the transparent conductive layer 105 is disposed above the one or more optical sensor chips 103 , and the upper surface of the transparent conductive layer 105 is flush with the upper surface of the light-shielding layer 102 .

[0105] Optionally, when a light-transmitting layer 104 is provided above one or more optical sensor chips 103, the transparent conductive layer 105 is provided below the light-transmitting layer 104, the transparent conductive layer 105 is between the light-transmitting layer 104 and the one or more optical sensor chips 103, and the upper surface of the light-transmitting layer 104 is flush with the upper surface of the light-shielding layer 102.

[0106] As an optional embodiment, when the optical sensing module includes a plurality of optical sensor chips 103 , the transparent conductive layer 105 includes a plurality of transparent conductive segments 1051 , and the plurality of transparent conductive segments 1051 are respectively disposed one-to-one above the plurality of optical sensor chips 103 .

[0107] As shown in Figures 15-17, when there are multiple optical sensor chips 103, the transparent conductive layer 105 includes multiple transparent conductive segments 1051. A transparent conductive segment 1051 is provided above each optical sensor chip 103, and the transparent conductive segment 1051 is electrically connected to the corresponding optical sensor chip 103 below it.

[0108] Specifically, as shown in FIG. 15 to FIG. 17 , the bottom surface of each transparent conductive segment 1051 in the plurality of transparent conductive segments 1051 is respectively attached to the top surface of each optical sensor chip 103 in the plurality of optical sensor chips 103 .

[0109] Optionally, as shown in FIG. 15 , when the light-transmitting layer 104 is not disposed above the plurality of optical sensor chips 103 , the upper surfaces of the plurality of transparent conductive segments 1051 may be flush with the upper surface of the light-shielding layer 102 .

[0110] Optionally, as shown in Figures 16 and 17, when multiple light-transmitting layers 104 are arranged above the multiple optical sensor chips 103, multiple transparent conductive segments 1051 are respectively arranged below the multiple light-transmitting layers 104, wherein each transparent conductive segment 1051 is located between the light-transmitting layer 104 and the optical sensor chip 103, and the upper surface of the light-transmitting layer 104 is flush with the upper surface of the light-shielding layer 102.

[0111] Optionally, as shown in Figure 17, when multiple transparent conductive segments 1051 are respectively arranged under the multiple light-transmitting layers 104, a transparent conductive layer 105 is also arranged on the upper surface of the multiple light-transmitting layers 104 and the light-shielding layer 102, and the transparent conductive layer 105 is electrically connected to the substrate 101 through the conductive member 2010.

[0112] Optionally, the transparent conductive layer 105 includes at least one of indium tin oxide, indium zinc oxide, transparent conductive ink, nanosilver, or a metal grid. The transparent conductive layer 105 is deposited on the top surface of one or more optical sensor chips 103 by a coating, printing, or spraying process. The transparent conductive layer 105 is interconnected with the one or more optical sensor chips 103 and grounded to provide electrical shielding.

[0113] The embodiment of the present application realizes the electrical shielding function of the optical sensing module by providing the transparent conductive layer 105, further reduces electrical noise interference, and improves the accuracy of optical signal recognition.

[0114] The present application also discloses an electronic device including the optical sensing module described in the above embodiment. The electronic device is an electronic device having a screen module, and can be a laptop, mobile phone, tablet computer, desktop computer, gaming device, in-vehicle electronic device, wearable smart device, etc.

[0115] Although the present application has been shown and described with respect to one or more implementations, equivalent variations and modifications will occur to those skilled in the art based on a reading and understanding of this specification and the accompanying drawings. The present application includes all such modifications and variations and is limited only by the scope of the appended claims. In particular, with respect to the various functions performed by the above-mentioned components, the terms used to describe such components are intended to correspond to any component (unless otherwise indicated) that performs the specified function of the component (e.g., which is functionally equivalent), even if the structure is not identical to the disclosed structure that performs the function in the exemplary implementation of this specification shown herein.

[0116] That is, the above description is merely an embodiment of the present application and does not limit the patent scope of the present application. Any equivalent structural or equivalent process transformations made using the contents of the description and drawings of this application, such as the mutual combination of technical features between the various embodiments, or direct or indirect application in other related technical fields, are also included in the patent protection scope of the present application.

[0117] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of technical features indicated. Therefore, features defined as "first" or "second" may explicitly or implicitly include one or more features. In the description of this application, "plurality" means two or more, unless otherwise specifically defined.

[0118] The present application provides the above description in order to enable any person skilled in the art to implement and use the present application. In the above description, various details are listed for the purpose of explanation. It should be understood that those of ordinary skill in the art will recognize that the present application can also be implemented when these specific details are not used. In other embodiments, well-known processes will not be elaborated in detail to avoid making the description of the present application obscure with unnecessary details. Therefore, the present application is not intended to be limited to the embodiments shown, but is consistent with the widest range of principles and features disclosed in the present application.

[0119] It should be noted that, under the premise of no conflict, the various embodiments and / or the technical features in each embodiment described in this application can be arbitrarily combined with each other, and the technical solution obtained after the combination should also fall within the scope of protection of this application.

[0120] It should be understood that the specific examples in the embodiments of the present application are only to help those skilled in the art to better understand the embodiments of the present application, rather than to limit the scope of the embodiments of the present application. Those skilled in the art can make various improvements and modifications based on the above embodiments, and these improvements or modifications all fall within the scope of protection of the present application.

[0121] The above description is merely a specific embodiment of the present application, but the scope of protection of the present application is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in this application should be included in the scope of protection of this application. Therefore, the scope of protection of this application should be based on the scope of protection of the claims.

Claims

1. An optical sensing module, characterized in that, include: A substrate, a light shielding layer, one or more optical sensor chips, a light-transmitting layer and a transparent conductive layer; The one or more optical sensor chips are disposed above the substrate; The transparent layer is disposed above the one or more optical sensor chips; The light shielding layer covers the portion of the one or more optical sensor chips that is not attached to the substrate and the light-transmitting layer; The transparent conductive layer is arranged on the transparent layer or / and the transparent conductive layer is arranged on the one or more optical sensor chips, and the transparent conductive layer is electrically connected to the ground line in the substrate; The transparent conductive layer is used to shield interference signals of the one or more optical sensor chips; The one or more optical sensor chips are used to generate corresponding electrical signals according to the optical signals that pass through the transparent conductive layer and the light-transmitting layer and reach the sensing area.

2. The optical sensing module according to claim 1, wherein The first surface of the one or more optical sensor chips is attached to the first surface of the substrate, the sensing area on the second surface of the one or more optical sensor chips is attached to the first surface of the light-transmitting layer, and the wiring terminals on the second surface of the one or more optical sensor chips are electrically connected to the substrate through a first welding wire; The transparent conductive layer is bonded to the second surface of the light-transmitting layer; The light shielding layer covers a portion of the light-transmitting layer other than the second surface and not bonded to the one or more optical sensor chips, wherein the first surface of the light-transmitting layer is opposite to the second surface.

3. The optical sensing module according to claim 2, wherein, The optical sensing module further includes: a processing chip, a first surface of the processing chip is attached to the first surface of the substrate, and the processing chip is electrically connected to the substrate via a second welding wire.

4. The optical sensing module according to claim 2, characterized in that The transparent conductive layer is electrically connected to the ground line in the substrate through a circuit board, a third welding wire or a conductive column.

5. The optical sensing module according to claim 2, characterized in that, The surface of the light shielding layer that is bonded to the transparent conductive layer is flush with the second surface of the light-transmitting layer.

6. The optical sensing module according to claim 5, characterized in that The side surface of the substrate is bonded to the transparent conductive layer, and the surface of the light shielding layer that is not bonded to the one or more optical sensor chips, the light-transmitting layer or the substrate is bonded to the transparent conductive layer, wherein the first surface of the substrate is opposite to the second surface, and the side surface of the substrate is perpendicular to the first surface and the second surface of the substrate.

7. The optical sensing module according to claim 6, characterized in that, The transparent conductive layer is provided with a through hole for the second connection terminal located on the side surface of the substrate to pass through.

8. The optical sensing module according to claim 2, wherein The first surface of the light-transmitting layer is bonded to the sensing area by processing a chip bonding film; The light transmittance of the processing chip bonding film is greater than or equal to the light transmittance of the light-transmitting layer.

9. The optical sensing module according to claim 1, characterized in that, The optical sensing module further includes: a processing chip, the processing chip is embedded in the substrate, flip-mounted on the substrate, or fixed on the substrate, and the processing chip is electrically connected to the substrate; The one or more optical sensor chips are flip-mounted on the substrate and / or the processing chip, and the one or more optical sensor chips are electrically connected to the substrate and / or the processing chip below. The light-shielding layer is disposed above the substrate and encapsulates the one or more optical sensing chips and the processing chip. An opening is formed at the top of the light-shielding layer corresponding to the position of the one or more optical sensing chips. The opening is used to expose the photosensitive regions of the one or more optical sensing chips to transmit light; The light-transmitting layer is disposed in the opening, and the light-transmitting layer is fixed above the one or more optical sensing chips.

10. The optical sensing module according to claim 9, wherein, When the processing chip is buried in the substrate, a first redistribution layer is provided on the top layer of the substrate, and the first redistribution layer is electrically connected to the pads of the processing chip; or, When the processing chip is buried in the substrate, a second redistribution layer is provided on the top layer of the substrate. The second redistribution layer is electrically connected to some of the pads of the processing chip, and the remaining pads of the processing chip are electrically connected to the substrate through bonding wires; One end of the bonding wire is connected to the remaining pads of the processing chip, and the other end of the bonding wire is connected to the second redistribution layer.

11. The optical sensing module according to claim 9, wherein, When the processing chip is flip-chip mounted above the substrate, a first through-silicon via is formed on the processing chip, and the first through-silicon via is electrically connected to the substrate; or, When the processing chip is fixed above the substrate, the processing chip is electrically connected to the substrate through bonding wires.

12. The optical sensing module according to any one of claims 9-11, characterized in that, One or more second through-silicon vias are formed on the optical sensing chip(s), and the second through-silicon vias are electrically connected to the processing chip and / or the substrate.

13. The optical sensing module according to claim 9, wherein The transparent conductive layer is disposed on the upper surface of the light-shielding layer.

14. The optical sensing module according to claim 13, characterized in that, The transparent conductive layer is electrically connected to the processing chip or the substrate through a conductive member penetrating the light-shielding encapsulation layer.

15. The optical sensing module according to claim 14, wherein The conductive member includes at least one of a bonding wire, a metal post, or a conductive via.

16. The optical sensing module according to claim 9, characterized in that, The optical sensing module includes a plurality of optical sensing chips, the transparent conductive layer includes a plurality of transparent conductive segments, and the plurality of transparent conductive segments are respectively disposed one-to-one above the plurality of optical sensing chips.

17. The optical sensing module according to claim 1, wherein, The one or more optical sensing chips include at least one of an ambient light sensor, a proximity sensor, a color temperature sensor, an image sensor, or a light-emitting chip.

18. The optical sensing module according to claim 1, wherein The light-shielding layer is an opaque black EMC layer or a light-absorbing material layer.

19. An electronic device, characterized in that, An optical sensing module and a screen module as claimed in any one of claims 1-18 are included.

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