Radiation conversion element, method of producing a radiation conversion element and optoelectronic device

Abstract

A radiation conversion element (1) comprising a first main face (11) and a second main face (12) opposite to the first main face (11) is specified, wherein the radiation conversion element (1) is configured to at least partly convert a primary radiation incident on the radiation conversion element (1) into a secondary radiation, wherein a radiation shaping structure (2) is formed on at least one of the first main face (11) and the second main face (12). Further, a method of producing a radiation conversion element (1) and an optoelectronic device (4) are specified.

Description

[0001] Description

[0002] RADIATION CONVERS ION ELEMENT , METHOD OF PRODUCING A RADIATION CONVERS ION ELEMENT AND OPTOELECTRONIC DEVICE

[0003] The present application relates to a radiation conversion element , a method of producing a radiation conversion element and to an optoelectronic device .

[0004] In optoelectronic devices such as LED ( light-emitting diode ) packages using a plurality of LED chips , gaps between the LED chips may cause an inhomogeneous light output .

[0005] An obj ect of the present application is to provide a way to improve the homogeneity of the light output .

[0006] This obj ect is obtained inter alia by a radiation conversion element , a method, and by an optoelectronic device according to the independent claims . Further configurations and expediencies are subj ects of the dependent claims .

[0007] A radiation conversion element comprising a first main face and a second main face opposite to the first main face is speci fied . For example , the radiation conversion element is a prefabricated ceramic radiation conversion element configured to be placed onto one or a plurality of optoelectronic semiconductor chips .

[0008] According to at least one embodiment of the radiation conversion element , the radiation conversion element is configured to at least partly convert a primary radiation incident on the radiation conversion element into a secondary radiation . For example , a peak wavelength of the secondary radiation is longer than a peak wavelength of the primary radiation . For example , the radiation conversion element is configured to convert primary radiation in the ultraviolet or visible , for example blue , spectral range into secondary radiation with a peak wavelength in the visible or infrared spectral range , for example in the blue , green, yellow or orange spectral range .

[0009] For example , during intended use of the radiation conversion element the primary radiation is incident onto the second main face of the radiation conversion element . The primary radiation may be completely or only partly converted into secondary radiation when passing through the radiation conversion element towards the first main face .

[0010] In particular, the radiation conversion element is a ceramic radiation conversion element . The radiation conversion element may, for example , comprise one of the following phosphors or be formed from one of the following phosphors : garnets doped with rare earth metals , alkaline earth sul fides doped with rare earth metals , thiogallates doped with rare earth metals , aluminates doped with rare earth metals , silicates doped with rare earth metals , such as orthosilicates , chlorosilicates doped with rare earth metals , alkaline earth silicon nitrides doped with rare earth metals , oxynitrides doped with rare earth metals and aluminum oxynitrides doped with rare earth metals , silicon nitrides doped with rare earth metals , sialons .

[0011] In particular, garnets such as yttrium aluminum oxide (YAG) , lutetium aluminum oxide ( LuAG) and terbium aluminum oxide ( TAG) can be used as phosphors . The phosphors are doped with one of the following activators , for example : cerium, europium, terbium, praseodymium, samarium, manganese .

[0012] According to at least one embodiment of the radiation conversion element , a radiation shaping structure is formed on at least one of the first main face and the second main face . In particular, the radiation shaping structure is configured to change the geometric light path through the radiation conversion element , for example by changing the incoupling and / or outcoupling behaviour of the radiation conversion element .

[0013] In the context of the present application, the term " light" is not limited to visible radiation, but also includes radiation in the ultraviolet and infrared spectral range .

[0014] In at least one embodiment of the radiation conversion element , the radiation conversion element comprises a first main face and a second main face opposite to the first main face wherein the radiation conversion element is configured to at least partly convert a primary radiation incident on the radiation conversion element into a secondary radiation, wherein a radiation shaping structure is formed on at least one of the first main face and the second main face .

[0015] The radiation shaping structure may have an elongate shape in a top view onto the radiation conversion element . For example , a length of the radiation shaping structure is at least by a factor of two or at least by a factor of 10 or at least by a factor of 10 larger than a width of the radiation shaping structure . According to at least one embodiment of the radiation conversion element , the radiation shaping structure comprises a notch . In a cross-sectional view, the notch may comprise one or more flat or curved subregions or combinations thereof . For example , the notch is arranged on the second main face of the radiation conversion element .

[0016] According to at least one embodiment of the radiation conversion element , the radiation shaping structure comprises an elevation . For example , the elevation is formed on the first main face of the radiation conversion element .

[0017] According to at least one embodiment of the radiation conversion element , a height of the radiation shaping structure in a vertical direction extending perpendicular to the first main face is at least 5 pm or at least 10 pm . Thus , the height of the radiation shaping structure is large compared to the wavelengths of the primary radiation in the visible or ultraviolet spectral range . Consequently, the ef fect of shaping the radiation is in particular based on reflection and / or refraction of the radiation at the radiation shaping element .

[0018] Alternatively or in addition, the height is at most 70% or at most 50% of a thickness of the radiation conversion element . In particular, the radiation shaping element may be formed such that it does not negatively af fect the mechanical stability of the radiation conversion element .

[0019] Further, an optoelectronic device is speci fied .

[0020] According to at least one embodiment of the optoelectronic device , the optoelectronic device comprises two optoelectronic semiconductor chips arranged laterally side by side . For example , the two optoelectronic semiconductor chips are configured to emit primary radiation in the ultraviolet , visible or infrared spectral range . In particular the optoelectronic semiconductor chips may be configured to emit primary radiation with the same peak emission wavelength within typical manufacturing tolerances .

[0021] The optoelectronic device further comprises a radiation conversion element as described above , wherein the radiation conversion element extends over the optoelectronic semiconductor chips .

[0022] The optoelectronic device may comprise more than two optoelectronic semiconductor chips . For example , the optoelectronic semiconductor chips may be arranged in a line or in a two-dimensional array . Thus , radiation from two or more optoelectronic semiconductor chips is coupled into a common radiation conversion element .

[0023] According to at least one embodiment of the optoelectronic device , the radiation shaping structure overlaps with a gap between the optoelectronic semiconductor chips . For example , the radiation shaping structure extends along the side faces of two adj acent optoelectronic chips .

[0024] According to at least one embodiment of the optoelectronic device , the radiation shaping structure is configured to increase an emission of radiation through a region of the radiation conversion element that overlaps with the gap . In other words , the radiation shaping structure is configured to increase the light output between adj acent semiconductor chips . According to at least one embodiment of the optoelectronic device , a width of the radiation shaping structure amounts to at least 10% or at least 20% or at least 30% and / or at most 200% or at most 150% or at most 120% of a distance between the optoelectronic semiconductor chips . Thus , the width of the radiation shaping structure is adapted to the gap between adj acent optoelectronic semiconductor chips .

[0025] According to at least one embodiment of the optoelectronic device , the second main face of the radiation conversion element faces the optoelectronic semiconductor chip, wherein the radiation shaping structure comprises a notch extending into the second main face .

[0026] By means of the notch, the primary radiation from the optoelectronic semiconductor chips 41 can be coupled into the radiation conversion element and / or coupled out more ef ficiently between adj acent semiconductor chips . This helps to improve the homogeneity of the light output exiting from the first main face of the radiation conversion element , in particular in a region overlapping with the gap .

[0027] According to at least one embodiment of the optoelectronic device , the radiation shaping structure comprises an elevation formed on the first main face , wherein the first main face faces away from the optoelectronic semiconductor chips .

[0028] By means of the elevation, the coupling out of radiation in a region overlapping with the gap between adj acent semiconductor chips can be increased . The optoelectronic device may also comprise at least one radiation shaping structure on the second main face and one radiation shaping structure on the first main face .

[0029] The number of optoelectronic semiconductor chips may vary in wide ranges .

[0030] I f , for example , the semiconductor chips are arranged in an m x n array with n lines and m columns , the radiation conversion element may comprise n- 1 radiation shaping structures extending between adj acent lines and m- 1 radiation shaping structures extending along adj acent columns , wherein m and n are integers .

[0031] The radiation conversion element may further comprise radiation shaping structures configured to overlap with the semiconductor chips . In particular, the number of radiation shaping structures along one direction may be larger than the number of gaps between adj acent optoelectronic semiconductor chips along this direction .

[0032] For example , at least one or at least two or at least three or at least four radiation shaping structures may overlap with the same optoelectronic semiconductor chip in a top view onto the optoelectronic device . For example , the radiation shaping structures may be distributed over the entire first main face and / or over the entire second main face .

[0033] Further, a method of producing a radiation conversion element is speci fied .

[0034] According to at least one embodiment of the method, the method comprises the steps of providing a base material , structuring at least one side of the base material to produce a radiation shaping structure and singulating the base material such that the radiation conversion element comprises the radiation shaping structure . Using this method, a plurality of radiation conversion elements may be produced from the provided base material .

[0035] The steps are preferably performed in the described order . In this case , the singulated radiation conversion element already comprises the radiation shaping structure . Thus , it is not necessary to provide the structuring to already singulated radiation conversion elements .

[0036] After the structuring process to form the radiation shaping structure , the base material may be still contiguous . In particular, the structuring does not extend completely through the base material .

[0037] According to at least one embodiment of the method, at least one of the steps of structuring the base material and singulating the base material is performed using laser radiation . Alternatively, another material removal method such as etching may be performed .

[0038] According to at least one embodiment of the method, the base material is in a green state during the step of structuring the base material . Further, the base material may be in the green state during the step of singulating the base material .

[0039] According to at least one embodiment of the method, the base material is sintered after the steps of structuring and singulating the base material . Prior to the sintering process , a pre-sintering process may be performed i f appropriate . The method is particularly suited for producing a radiation conversion element as described above . Thus , features described in connection with the radiation conversion element and the optoelectronic device may also apply for the method and vice versa .

[0040] Features described above in connection with at least one embodiment of the method or the radiation conversion element or the optoelectronic device can be combined with other features described in connection with at least one embodiment of the method or the radiation conversion element or the optoelectronic device unless they are contradictory .

[0041] In the exemplary embodiments and figures similar or similarly acting constituent parts are provided with the same reference signs . Generally, only the di f ferences with respect to the individual exemplary embodiments are described . Unless speci fied otherwise , the description of a part or feature in one exemplary embodiment applies to a corresponding part or feature in another exemplary embodiment as well .

[0042] In the Figures :

[0043] Figure 1A shows an exemplary embodiment of a radiation conversion element in a cross-sectional view;

[0044] Figure IB shows associated simulations of an irradiance as a contour plot ;

[0045] Figure 1C shows a first reference radiation conversion element with an associated irradiance as contour plot in Figure ID; Figure IE shows a second reference radiation conversion element with an associated irradiance as contour plot in Figure I F;

[0046] Figures 2A, 2B, 2C, 2D, 2E , and 2 F show exemplary embodiments of a radiation conversion element in sectional view;

[0047] Figure 3 shows an exemplary embodiment of an optoelectronic device in sectional view; and

[0048] Figures 4A and 4b show an exemplary embodiment of a method of producing a radiation conversion element by way of intermediate steps shown in sectional view .

[0049] The elements illustrated in the figures and their si ze relationships among one another are not necessarily true to scale . Rather, individual elements or layer thicknesses may be represented with an exaggerated si ze for the sake of better representability and / or for the sake of better understanding .

[0050] The radiation conversion element 1 illustrated in Figure 1A extends in a vertical direction between a first main face 11 and a second main face 12 opposite to the first main face 11 . The radiation conversion element 1 is configured to at least partly convert a primary radiation incident on the radiation conversion element 1 into a secondary radiation .

[0051] For example , the radiation conversion element 1 is configured to convert primary radiation in the blue spectral range into secondary radiation in the yellow spectral range so that a superposition of the primary radiation and the secondary radiation appears white to the human eye . The radiation conversion element may also comprise two or more di f ferent luminescent or phosphorescent substances with di f ferent peak emission wavelengths . For example , the radiation conversion element 1 may comprise a red light emitting phosphor in addition to a yellow light emitting phosphor to obtain warmwhite light .

[0052] A radiation shaping structure 2 is formed in the radiation conversion element 1 . In the exemplary embodiment shown in Figure 1A, the radiation shaping structure 2 is formed on the second main face 12 .

[0053] Exemplarily, the radiation conversion element 1 is configured to be mounted on top of two optoelectronic semiconductor chips , wherein the radiation shaping structure extends between the optoelectronic semiconductor chips . However, the radiation conversion element 1 may also be configured to cover more than two optoelectronic semiconductor chips .

[0054] The second main face 12 of the radiation conversion element 1 faces the optoelectronic semiconductor chips when mounted to the optoelectronic semiconductor chips .

[0055] In Figure 1A, the radiation shaping structure 2 is formed as a notch 21 , wherein the notch 21 has a triangular shape in the cross-sectional view . Thus , the notch 21 tapers towards the first main face 11 .

[0056] However, other shapes can be used for the radiation shaping structure 2 , for example those described in connection with Figures 2A to 2C . The radiation shaping structure 2 may also comprise an elevation in addition to or instead of the notch 21 as shown in Figure 2D . A height 25 of the radiation shaping structure 2 is , for example , at least 2 pm or at least 5 pm or at least 10 pm and / or at most 150 pm or at most 100 pm . For example , the height 25 is at most 50% of a thickness 15 of the radiation conversion element .

[0057] For example , the thickness 15 of the radiation conversion element is at least 50 pm or at least 80 pm or at least 100 pm and / or at most 500 pm or at most 400 pm or at most 300 pm . For example , the thickness 15 is in a range from 100 pm to 250 pm .

[0058] A width 26 of the radiation shaping structure 2 is for example at least 2 pm or at least 5 pm or at least 10 pm and / or at most 300 pm or at most 200 pm or at most 100 pm .

[0059] By means of the radiation shaping structure 2 , the radiation is emitted more homogenously from the first main face 11 i f the radiation conversion element 1 is mounted to semiconductor chips arranged laterally beside one another .

[0060] Figure IB illustrates simulations of an irradiance in W / cm2in a contour plot for a radiation conversion element 1 arranged on top of two optoelectronic semiconductor chips arranged laterally side by side with a gap 42 of 80 pm .

[0061] As Figure IB shows , a signi ficant amount of radiation exits from a region of the radiation conversion element that overlaps with the gap 42 , even though there is no semiconductor chip directly below this region .

[0062] For comparison, Figure 1C shows a first reference radiation conversion element 91 without such a radiation shaping structure . The comparison with the associated simulation results illustrated in Figure ID shows that the homogeneity of light output can be increased using the radiation shaping structure 2 of the radiation conversion element 1 .

[0063] As a second reference radiation conversion element 92 , Figure IE shows the case that both semiconductor chips are provided with individual second reference radiation conversion elements 92 . As Figure I F shows , the inhomogeneities are even higher than in Figure ID .

[0064] Thus , the radiation shaping structure 2 can be used to redirect the radiation emitted by the semiconductor chips 41 underneath the radiation conversion element 1 such that it is more evenly distributed over the gap 42 between adj acent semiconductor chips . For example , the radiation can be refracted or reflected at a side face of the radiation shaping structure 2 .

[0065] Figures 2A, 2B and 2C illustrate further exemplary embodiments of a radiation conversion element 1 with a radiation shaping structure 2 comprising a notch 21 .

[0066] In the exemplary embodiment of Figure 2A, the notch 21 has a substantially rectangular cross-section .

[0067] In the exemplary embodiment of Figure 2B, the notch 21 has a cross-section with a plurality of flat surfaces , wherein the cross-section of the notch tapers in a partial region of the notch 21 with increasing distance from the second main face In the exemplary embodiment of Figure 2C, the notch 21 has a partially curved cross-section .

[0068] In the exemplary embodiment of Figure 2D, the radiation shaping structure 2 is formed as an elevation 22 arranged on the first main face 11 of the radiation conversion element 1 For example , the elevation 22 has the shape of a cylindrical lens . An axis of the cylindrical lens may extend parallel to the side faces of the semiconductor chips 41 adj oining the gap 42 .

[0069] In the exemplary embodiment of Figure 2E , a plurality of radiation shaping structures 2 extends over the second main face 12 . Thus , the radiation shaping structure 2 does not only extend above the gap between two adj acent semiconductor chips , but also directly above the semiconductor chips . In particular, the radiation shaping structures may be distributed evenly over the entire first main face 11 or the second main face 12 . This configuration may likewise be combined with the cross-sections of the notches 21 as described in connection with Figures 2A to 2C or with a configuration with elevations 22 , as described in connection with Figure 2D .

[0070] Figure 2 F further illustrates that the radiation conversion element 1 may also be configured to cover more than two semiconductor chips . For example , Figure 2 F illustrates the case where at least three optoelectronic semiconductor chips 41 are arranged laterally beside one another along a direction .

[0071] Of course , the optoelectronic semiconductor chips 41 may also be arranged laterally beside one another along two directions . For example , the optoelectronic semiconductor chips may be arranged in an array with n lines and m columns , wherein the radiation conversion element 1 comprises n- 1 radiation shaping structures 2 arranged between adj acent rows and m- 1 radiation shaping structures 2 arranged between adj acent columns of the semiconductor chips .

[0072] Figure 3 illustrates an exemplary embodiment of an optoelectronic device 4 . Exemplarily, the radiation conversion element 1 is configured as described in connection with Figure 1A. However, a radiation conversion element 1 according to one of the other exemplary embodiments may also be used .

[0073] The optoelectronic device 4 comprises two optoelectronic semiconductor chips 41 laterally arranged side by side so that a gap 42 is present between adj acent optoelectronic semiconductor chips 41 . The optoelectronic semiconductor chips 41 each comprise an active region 43 configured to emit a primary radiation, for example in the ultraviolet visible or infrared spectral range .

[0074] For example , the optoelectronic semiconductor chips 41 , in particular the active regions thereof comprise a I I I-V compound semiconductor material .

[0075] I I I-V compound semiconductor materials are particularly suitable for radiation generation in the ultraviolet (AlxInyGai-x-y N) via the visible (AlxInyGai-X-yN, in particular for blue to green radiation, or AlxInyGai-X-yP, in particular for yellow to red radiation) to the infrared (AlxInyGai-x-yAs ) spectral range . Here , 0 < x < 1 , 0 < y < 1 and x + y < 1 apply in each case , in particular with x V 1 , y 1 , x = / 0 and / or y = / 0 . With I I I-V compound semiconductor materials , in particular from the material systems mentioned, high internal quantum ef ficiencies can be achieved in radiation generation .

[0076] The radiation conversion element 1 is mounted to the semiconductor chips 41 by means of an adhesive material 5 . The adhesive material is transparent or at least translucent to the primary radiation . For example , the adhesive material 5 comprises a silicone .

[0077] The optoelectronic semiconductor chips 41 may, for example , be embodied as flip-chip semiconductor chips so that the side of the optoelectronic semiconductor chips 41 facing the radiation conversion element 1 is free of electrical contacts of the optoelectronic semiconductor chip 41 . The electrical contacts may be arranged on the side of the optoelectronic semiconductor chips 41 facing away from radiation conversion element 1 .

[0078] The optoelectronic device 4 including the radiation conversion element 1 and the semiconductor chips 41 may be mounted to a carrier 6 . For example , the carrier 6 is a circuit board or a submount including electrical connections to the optoelectronic semiconductor chips 41 . Alternatively, the carrier 6 may be a housing of a package , for example a pre-molded housing .

[0079] A width 26 of the radiation shaping structure 2 can be adapted to a distance 49 between adj acent optoelectronic semiconductor chips 41 . For example , the width 26 amounts to at least 10% or at least 20% or at least 30% and at most 200% or at most 150% of the distance 49 between the adj acent optoelectronic semiconductor chips 41 . For example , the distance 49 is at least 10 pm or at least 20pm or at least 20pm and / or at most 150 pm or at most 100 pm .

[0080] As described in connection with Figures 1A and IB, the radiation shaping structure 2 helps to obtain a higher homogeneity of the radiation output at the first main face 11 of the radiation conversion element 1 compared to an unstructured radiation conversion element extending over two or more optoelectronic semiconductor chips .

[0081] A method of producing a radiation conversion element is illustrated in Figures 4A and 4B .

[0082] As illustrated in Figure 4A, a base material 19 for the radiation conversion element is provided . For example , the base material is in a green state .

[0083] A plurality of radiation shaping structures 2 is formed on at least one side of the base material 19 . This can be done by irradiating the base material 19 with a first radiation 81 to form notches as illustrated in Figure 4A. Alternatively, material of the base material 19 can be removed laterally beside the radiation shaping structure 2 such that the radiation shaping structure 2 is embodied as an elevation .

[0084] Other material removing methods may also be used instead, for example chemical or mechanical processes .

[0085] The structuring is in particular performed such that the radiation shaping structure 2 does not extend completely through the base material . As illustrated in Figure 4B, the base material 19 is subsequently singulated by means of a second radiation 82 to form the individual radiation conversion elements 1 . In the exemplary embodiment shown in Figure 4B, the radiation conversion element 1 is formed such that it comprises exactly one radiation shaping structure 2 . However, the number of radiation shaping structures 2 per radiation conversion element 1 may be varied as described in connection with Figures 2E and 2 F, for example .

[0086] Subsequently, the base material 19 may be sintered to finish the radiation conversion element 1 . Prior to the sintering process , a pre-sintering process may be performed i f appropriate .

[0087] As shown in Figures 4A and 4B, the structuring of the base material 19 to produce the radiation shaping structures 2 is preferably performed prior to the singulating process so that it is not necessary to structure the already singulated radiation conversion elements .

[0088] As described above , the produced radiation conversion elements 1 provide a radiation shaping structure 2 that enables light to be extracted in between chips as the light emission between adj acent semiconductor chips is increased by means of the radiation shaping structure 2 . Thus , the ef fort to reduce the chip-to-chip distance to improve the homogeneity can be reduced . This helps to signi ficantly reduce the manufacturing ef fort and results in a cost reduction .

[0089] The invention described herein is not restricted by the description given with reference to the exemplary embodiments. Rather, the invention encompasses any novel feature and any combination of features, including in particular any combination of features in the claims, even if this feature or this combination is not itself explicitly indicated in the claims or exemplary embodiments.

[0090] References

[0091] 1 radiation conversion element

[0092] 11 first main face

[0093] 12 second main surface

[0094] 15 thickness

[0095] 19 base material

[0096] 2 radiation shaping structure

[0097] 21 notch

[0098] 22 elevation

[0099] 25 height

[0100] 26 width

[0101] 4 optoelectronic device

[0102] 41 optoelectronic semiconductor chip

[0103] 42 gap

[0104] 43 active region

[0105] 49 distance between optoelectronic semiconductor chips

[0106] 5 adhesive material

[0107] 6 carrier

[0108] 81 first radiation

[0109] 82 second radiation

[0110] 91 first reference radiation conversion element

[0111] 92 second reference radiation conversion element

Claims

Claims1. A radiation conversion element (1) comprising a first main face (11) and a second main face (12) opposite to the first main face (11) , wherein the radiation conversion element (1) is configured to at least partly convert a primary radiation incident on the radiation conversion element (1) into a secondary radiation, wherein a radiation shaping structure(2) is formed on at least one of the first main face (11) and the second main face (12) .

2. The radiation conversion element according to claim 1, wherein the radiation shaping structure (2) comprises a notch (21) .

3. The radiation conversion element according to claim 1 or 2, wherein the radiation shaping structure comprises an elevation ( 22 ) .

4. The radiation conversion element according to any one of the preceding claims, wherein a height (25) of the radiation shaping structure (2) in a vertical direction extending perpendicular to the first main face (11) is at least 10 pm and at most 50% of a thickness (15) of the radiation conversion element (1) .

5. An optoelectronic device (4) comprising two optoelectronic semiconductor chips (41) arranged laterally side by side and a radiation conversion element (1) according to any one of the preceding claims, the radiation conversion element (1) extending over the optoelectronic semiconductor chips.

6. The optoelectronic device according to claim 5, wherein the radiation shaping structure (2) overlaps with a gap (42) between the optoelectronic semiconductor chips (41) .

7. The optoelectronic device according to claim 5 or 6, wherein the radiation shaping structure (2) is configured to increase an emission of radiation through a region of the radiation conversion element that overlaps with the gap (42) .

8. The optoelectronic device according to any one of claims 5 to 7 , wherein a width (26) of the radiation shaping structure (2) amounts to at least 10% and at most 200 % of a distance (49) between the optoelectronic semiconductor chips.

9. The optoelectronic device according to any one of claims 5 to 7 , wherein the second main face (12) of the radiation conversion element (1) faces the optoelectronic semiconductor chip (41) and wherein the radiation shaping structure (2) comprises a notch (21) extending into the second main face (12) .

10. The optoelectronic device according to any one of claims 5 to 8 , wherein the radiation shaping structure (2) comprises an elevation (22) formed on the first main face (11) , the first main face (11) facing away from the optoelectronic semiconductor chips (41) .

11. A method of producing a radiation conversion element (1) , comprising the steps of: a) providing a base material (19) ;b) structuring at least one side of the base material (19) to produce a radiation shaping structure (2) ; c) singulating the base material (19) such that the radiation conversion element (1) comprises the radiation shaping structure ( 2 ) .

12. The method according to claim 10, wherein step b) is performed using laser radiation.

13. The method according to claim 10 or 11, wherein the base material (19) is in a green state in step b) .

14. The method according to any one of claims 11 to 13, wherein the base material (19) is sintered after steps b) and c) .

15. The method according to any one of claims 11 to 14, wherein a radiation conversion element (1) according to any one of claims 1 to 4 is produced.

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