Vehicle-mounted high-side driver control circuit and vehicle

Abstract

A vehicle-mounted high-side driver control circuit and a vehicle comprising same. The vehicle-mounted high-side driver control circuit at least comprises: a power distribution channel, comprising a current sampling resistor and a switch unit; a current detection and gate control module, used for controlling the switch unit connected thereto to be in an off state when a current exceeding a threshold is detected across the current sampling resistor; an undervoltage detection module, used for controlling the switch unit to be in an off state via the current detection and gate control module during circuit power-up and when undervoltage is detected at a power distribution output terminal after normal operation; and a state control module, used for receiving an ON / OFF excitation signal from an MCU to control the switch unit to be in an on or off state; wherein the undervoltage detection module, the current detection and gate control module, and the switch unit are connected in series. On the basis of the described vehicle-mounted high-side driver control circuit, vehicle-mounted high-side power distribution can be controlled safely and flexibly, achieving low cost, high safety and reliability, customizable gain levels at various stages, and strong robustness.

Description

Vehicle-mounted high-side power distribution control circuit and vehicle

[0001] This application claims priority to the Chinese patent application filed with the Patent Office of China on January 23, 2024, with application number 202410098685.1 and invention name “A vehicle-mounted high-side power distribution control circuit and vehicle”, and claims priority to the Chinese patent application filed with the Patent Office of China on January 23, 2024, with application number 202420171839.0 and patent application name “A vehicle-mounted high-side power distribution control circuit and vehicle”, the entire contents of which are incorporated by reference into this application. Technical Field

[0002] The present application relates to the technical field of vehicle power supply, and in particular to a vehicle-mounted high-side power distribution control circuit and a vehicle. Background Art

[0003] With the increasing application of the three electrification elements (motor, battery, and electric drive) and new electronic and electrical architectures, the power distribution system within a vehicle must provide more than the rated power for various loads, including domain controllers, electronic control units, motors, lamps, and sensors. It must also provide safety mechanisms that match the respective functional safety requirements, including detection, diagnosis, and status settings.

[0004] For the high-side driver (HSD) in a vehicle, if a load or wiring harness short circuits, grounding, or overcurrent faults occur, and if timely measures are not taken, the connected load or the controller where the drive ECU circuit is located may be directly damaged. It may even cause the entire vehicle wiring harness to burn or catch fire due to overcurrent and overtemperature. The cost and impact of repairing and replacing the latter cannot be underestimated.

[0005] Existing technologies can use intelligent high-side integrated circuits (ICs) that integrate various voltage, current, temperature, and other detection, diagnosis, and protection functions, but these are relatively expensive and have long production and delivery cycles. Alternatively, a solution based on discrete components can be employed. The former offers high integration and greater cost advantages in high-current applications, while the latter offers a flexible structure suitable for smaller current distribution scenarios.

[0006] However, in existing technologies, the development of high-side power distribution units, whether integrated power distribution solutions or power distribution circuits built with discrete components, has some shortcomings:

[0007] The power distribution solution built using MCU and software has obvious shortcomings in response time and reliability and stability. At the same time, if there are software bugs or the software system has a long debugging cycle, the risk of repetitive injuries will increase.

[0008] Solutions that utilize pure circuit components for power distribution typically employ power MOSFETs and sampling resistors, along with varying numbers of operational amplifiers, voltage comparators, relays, and optocouplers to build the associated circuitry. In this approach, detection and self-locking are typically implemented independently, separating the state self-locking loop from detection. Existing solutions suffer from the drawbacks of a large number of components, complex circuitry, high cost, and relatively high power consumption.

[0009] At the same time, existing technical solutions suffer from the inconsistency between the state self-locking loop and the detection state, resulting in additional power consumption. Furthermore, if the state self-locking loop cannot be stably placed in the OFF state after power-up, and the power distribution state is in the ON state or in an uncertain state, this can lead to uncontrollable power distribution output. Furthermore, because the gain of the state self-locking loop is output by transistors, drastic gain changes in extreme scenarios can cause the state self-locking function to fail, resulting in poor robustness.

[0010] Summary of the Invention

[0011] The technical problem to be solved by this application is to provide a vehicle-mounted high-side power distribution control circuit and a vehicle, which can safely and flexibly control the vehicle-mounted high-side power distribution, and has the advantages of low cost, safety and reliability, flexible customization of gains at each level, and good robustness.

[0012] To solve the above technical problems, as one aspect of the present application, a vehicle-mounted high-side power distribution control circuit is provided, which at least includes:

[0013] The power distribution channel includes a current sampling resistor and a switch unit arranged between the power input terminal and the power distribution output terminal, and is used to output the input power;

[0014] The current detection and gate control module is used to control the level of the gate of the switch unit connected thereto so that the switch unit is in the off state when it detects that the current on the current sampling resistor exceeds the threshold or receives an OFF excitation signal from the MCU;

[0015] an undervoltage detection module connected to the current detection and gate control module, configured to control the switch unit to be in an off state through the current detection and control module when an undervoltage is detected at the power distribution output terminal during circuit power-up or after normal operation; and to control the switch unit to be in an on state through the current detection and control module when an ON excitation signal is received from the MCU;

[0016] a state control module, configured to receive an OFF excitation signal from the MCU and output it to the current detection and gate control module to control the switch unit to be in an OFF state; and to receive an ON excitation signal from the MCU and output it to the undervoltage detection module to control the switch unit to be in an ON state;

[0017] The undervoltage detection module, the current detection and gate control module, and the switch unit are connected in series.

[0018] The undervoltage detection module, the current detection and gate control module, and the switch unit form a positive feedback loop, wherein:

[0019] When the current detection and gate control module detects that the current on the current sampling resistor exceeds the threshold or receives an OFF excitation signal from the MCU, the current detection and gate control module locks the level of the gate of the switch unit connected thereto to the first level, so that the switch unit is in the off state;

[0020] When the undervoltage detection module compares that the voltage difference between the power input terminal and the power output terminal exceeds a predetermined difference threshold, it controls itself and the current detection and gate control module to perform state self-locking, locks the level of the gate of the switching unit at a first level, and puts the switching unit in an off state; when the undervoltage detection module receives an ON excitation signal from the MCU, it controls itself and the current detection and gate control module to perform state self-locking switching, locks the level of the gate of the switching unit at a second level, and puts the switching unit in a connected state.

[0021] Among them, the undervoltage detection module includes two-pole inverting amplifier tubes, the current detection and gate control module includes a first-stage inverting amplifier tube, and the switch unit forms a first-stage inverting amplifier tube. The three are cascaded to form a positive feedback loop with four-stage inverting amplifier tubes.

[0022] Among them, in the distribution channel, one end of the current sampling resistor is connected to the power input end, and the other end is connected to the source of the switch unit, the drain of the switch unit is connected to the power distribution output end; the gate of the switch unit is connected to the current detection and gate control module.

[0023] Wherein, the current detection and gate control module includes:

[0024] The first transistor Q1 is a PNP transistor, whose emitter is connected to the power input terminal, and a first resistor R1 and a first capacitor C1 are connected in parallel between the emitter and the base. The base is connected to the end of the current sampling resistor away from the power input terminal through the second resistor R2; the collector is grounded through the fourth resistor R4, and the collector is connected to the gate of the switching unit; the base is connected to the gate of the switching unit through the third resistor R3, and the base leads to a first control line (Stoff).

[0025] Wherein, the undervoltage detection module includes:

[0026] A second transistor Q2 and a third transistor Q3, wherein the second transistor Q2 is a PNP transistor and the third transistor Q3 is an NPN transistor;

[0027] A sixth resistor R6 and a second capacitor C2 are connected in parallel between the emitter and base of the second transistor Q2; its base is connected to the anode of the diode D1, and the cathode of the diode is connected to the power distribution output terminal via the seventh resistor; its collector is connected to the base of the third transistor Q3 via the eighth resistor R8;

[0028] The collector of the third transistor Q3 is connected to the first control line; the ninth resistor R9 is connected between the emitter and the base; and the emitter is grounded.

[0029] Wherein, the state control module includes:

[0030] An OFF excitation processing unit, one end of which is connected to the OFF excitation signal output line of the MCU, and the other end of which is connected to the first control line;

[0031] An ON excitation processing unit, one end of which is connected to the ON excitation signal output line of the MCU, and the other end is connected to the collector of the second transistor Q2 in the undervoltage detection module through a second control line (Ston);

[0032] The ON excitation signal is a high-level signal, and the OFF excitation signal is a low-level signal.

[0033] Wherein, the ON excitation processing unit includes:

[0034] The ON excitation transistor Qdpon is an NPN transistor, whose base is connected to the ON excitation signal output end of the MCU through the first voltage divider resistor Rdp1, and its base is grounded through the second voltage divider resistor Rdp2; its emitter is connected to its base; and its collector is connected to the second control line.

[0035] Wherein, the OFF excitation processing unit includes:

[0036] The OFF excitation transistor Qdpoff is an NPN transistor, whose base is connected to the OFF excitation signal output end of the MCU through the third voltage-dividing resistor Rdp3, and its base is grounded through the fourth voltage-dividing resistor Rdp4; its emitter is connected to its base; and its collector is connected to the first control line.

[0037] The circuit includes: a voltage sampling module connected to the power distribution output terminal, used for sampling the voltage of the power distribution output terminal and outputting it to the MCU.

[0038] Wherein, the switch unit is a power field effect transistor (Power-MOSFET, P-MOSFET).

[0039] Correspondingly, another aspect of the present application further provides a vehicle, which includes the aforementioned on-vehicle high-side power distribution control circuit.

[0040] The implementation of the embodiments of the present application has the following beneficial effects:

[0041] The present application provides a vehicle-mounted high-side power distribution control circuit and vehicle. A vehicle-mounted high-side power distribution control circuit that integrates fault detection and state self-locking loop is formed by adopting a four-stage inverting amplifier. In the obtained circuit, the structure is compact and integrated with the detection branch and the state self-locking loop, its state can be set independently, and the overcurrent and undervoltage thresholds can be flexibly adjusted. When an abnormality occurs in the circuit (overcurrent or undervoltage), the distribution channel can be quickly closed to protect the load, the wiring harness, and the load-level distribution power devices; after the status and fault are eliminated, a trigger pulse is sent through the MCU to change the self-locking loop state to realize the opening and closing control of the distribution channel. Therefore, the implementation of this application can ensure the high effectiveness of the circuit while maximizing the robustness of the high-side output circuit.

[0042] In the typical circuit of the embodiment of the present application, in addition to using power field-effect transistors (P-MOSFETs) and current sampling resistors, its core loop circuit only uses common devices such as three transistors, a diode, and several resistors and capacitors. There is no need to use complex devices such as operational amplifiers, comparators, optocouplers, and relays, which can minimize hardware costs and facilitate implementation while maintaining lower power consumption and failure rate.

[0043] In the embodiment of the present application, the power distribution state is accurately controllable, wherein the ON / OFF state of the switch unit can be set by the MCU with an independent pulse, and is determined to be in the OFF state when the circuit is powered on, which can avoid accidental start-up; at the same time, the detection state is coupled with the self-locking state, and the static current is low; and the circuit has maximum robustness, and the gain of each level can be customized, and the gain change in various extreme scenarios is minimized. The response scenario is very flexible and can be applied to various vehicle models. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, without paying any creative labor, obtaining other drawings based on these drawings still falls within the scope of the present application.

[0045] FIG1 is a functional module diagram of an embodiment of a vehicle-mounted high-side power distribution control circuit provided by the present application;

[0046] FIG2 is a schematic diagram of the circuit principle of the current detection and gate control module in FIG1 ;

[0047] FIG3 is a schematic diagram of the circuit principle of the undervoltage detection module in FIG1 ;

[0048] FIG4 is a schematic diagram of the circuit principle of the ON excitation processing unit in FIG1 ;

[0049] FIG5 is a schematic diagram of the circuit principle of the voltage sampling module in FIG1 ;

[0050] FIG6 is a schematic diagram of the overall circuit principle of an example of FIG1 ;

[0051] FIG7 is a circuit simulation waveform diagram of an application scenario in one embodiment of the present application;

[0052] FIG8 is a circuit simulation waveform diagram of another application scenario in one embodiment of the present application;

[0053] FIG9 is a circuit simulation waveform diagram of another application scenario in an embodiment of the present application. DETAILED DESCRIPTION

[0054] In order to make the purpose, technical solutions and advantages of this application clearer, this application will be described in detail below with reference to the accompanying drawings.

[0055] As shown in FIG1 , a functional module diagram of an embodiment of a vehicle-mounted high-side power distribution control circuit provided by the present application is shown; in conjunction with FIG2 to FIG6 , in this embodiment, the vehicle-mounted high-side power distribution control circuit at least includes:

[0056] The power distribution channel includes a current sampling resistor (Rsense) and a switch unit (Mswitch) provided at the power input end and the power distribution output end, and is used to output the input power;

[0057] The current detection and gate control module is used to control the level of the gate of the switch unit connected thereto so that the switch unit is in the off state when it detects that the current on the current sampling resistor exceeds the threshold or receives an OFF excitation signal from the MCU;

[0058] an undervoltage detection module connected to the current detection and gate control module, configured to control the switch unit to be in an off state through the current detection and control module when an undervoltage is detected at the power distribution output terminal during circuit power-up or after normal operation; and to control the switch unit to be in an on state through the current detection and control module when an ON excitation signal is received from the MCU;

[0059] a state control module, configured to receive an OFF excitation signal from the MCU and output it to the current detection and gate control module to control the switch unit to be in an OFF state; and to receive an ON excitation signal from the MCU and output it to the undervoltage detection module to control the switch unit to be in an ON state;

[0060] A voltage sampling module is connected to the power distribution output terminal, and is used to sample the voltage of the power distribution output terminal and output it to the MCU;

[0061] The undervoltage detection module, the current detection and gate control module, and the switch unit are connected in series.

[0062] It can be understood that in the embodiment of the present application, in the embodiment of the present application, the distribution channel is cascaded with the current detection and gate control module and the undervoltage detection module to form a fault detection and status self-locking loop, wherein the state of the self-locking loop determines the connection (ON) and disconnection (OFF) of the switching unit in the distribution channel.

[0063] The state control module and the voltage sampling module constitute the control and diagnostic interface between the power distribution control circuit and the MCU. The state control module is used to receive the OFF excitation signal and the ON excitation signal pulse instructions to set the state of the self-locking loop; the voltage sampling module is used to return the voltage sampling value of the power distribution output end to the MCU.

[0064] The undervoltage detection module, the current detection and gate control module, and the switch unit form a positive feedback loop, wherein the current detection and gate control module locks the gate level of the switch unit connected thereto to a first level when detecting that the current on the current sampling resistor exceeds a threshold value or receives an OFF excitation signal from the MCU, so that the switch unit is in an off state;

[0065] When the undervoltage detection module compares that the voltage difference between the power input terminal and the power output terminal exceeds a predetermined difference threshold, it controls itself and the current detection and gate control module to perform state self-locking, locks the level of the gate of the switching unit at a first level, and puts the switching unit in an off state; when the undervoltage detection module receives an ON excitation signal from the MCU, it controls itself and the current detection and gate control module to perform state self-locking switching, locks the level of the gate of the switching unit at a second level, and puts the switching unit in a connected state.

[0066] In a specific example, the undervoltage detection module includes two inverting amplifiers, the current detection and gate control module includes a first-stage inverting amplifier, and the switch unit forms a first-stage inverting amplifier. The three are cascaded to form a positive feedback loop with four inverting amplifiers. In this specific example, each functional module can also be implemented using transistors, MOS transistors, or operational amplifiers.

[0067] The following describes in detail the various functional modules in the circuit of the present application in conjunction with FIG. 2 to FIG. 6 .

[0068] In the distribution channel, the current sampling resistor is labeled Rsense in the figure; the switch unit is labeled Mswitch in the figure. In a practical example, the switch unit can be a power field effect transistor (P-MOSFET) having a gate (G), a source (S), and a drain (O). More specifically, one end of the current sampling resistor is connected to the power input terminal, and the other end is connected to the source of the switch unit. The drain of the switch unit is connected to the power distribution output terminal; the gate of the switch unit is connected to the current detection and gate control module. The switch unit can also serve as a fourth inverting amplifier in this circuit.

[0069] As shown in FIG2 , the current detection and gate control module includes:

[0070] The first transistor Q1 is a PNP transistor, with its emitter connected to the power input terminal. A first resistor R1 and a first capacitor C1 are connected in parallel between its emitter and base. Its base is connected to the end of the current sampling resistor away from the power input terminal via a second resistor R2. Its collector is grounded via a fourth resistor R4 and connected to the gate of the switching unit. Its base is connected to the gate of the switching unit via a third resistor R3, and a first control line (Stoff) is derived from the base. In this circuit, the first transistor Q1 serves as a current detector and a third inverting amplifier.

[0071] In a specific example, the working principle of the current detection and gate control module is:

[0072] When the current in the power channel increases to the point where the voltage drop across Rsense exceeds the PN junction voltage of the first transistor Q1 (typical value 0.6V), the first transistor Q1 turns on, and the impedance between its collector and emitter decreases sharply, causing a pull-up action on the gate line (Mgate line). The first capacitor C1 is a current detection filter capacitor that reduces the probability of false shutdowns caused by current fluctuations. When the power distribution load is a large capacitive load, after power distribution is turned on, the current flowing through the current sampling resistor Rsense rises instantaneously, crossing the overcurrent threshold, but then falls back below the threshold within a short period of time.

[0073] The calculation of the overcurrent detection threshold can be achieved using the following formula:

[0074] Among them, V be is the turn-on voltage of the first transistor Q1, R sense is the resistance of the current sampling resistor.

[0075] As shown in FIG3 , the undervoltage detection module includes:

[0076] A second transistor Q2 and a third transistor Q3, wherein the second transistor Q2 is a PNP transistor; the third transistor Q3 is an NPN transistor;

[0077] A sixth resistor R6 and a second capacitor C2 are connected in parallel between the emitter and base of the second transistor Q2; its base is connected to the anode of the diode D1, and the cathode of the diode is connected to the power distribution output terminal via a seventh resistor; its collector is connected to the base of the third transistor Q3 via an eighth resistor R8. The second transistor Q2 serves as a voltage detector and a first inverting amplifier in this circuit.

[0078] The collector of the third transistor Q3 is connected to the first control line; the emitter and base of the third transistor Q3 are connected to the ninth resistor R9; and the emitter of the third transistor Q3 is grounded. The third transistor Q3 serves as a second inverting amplifier in this circuit.

[0079] In a specific example, the working principle of the undervoltage detection module is:

[0080] When the load at the power distribution output experiences an abnormal fault, such as an output undervoltage (or a similar short circuit to ground), the output voltage drops significantly, increasing the voltage difference with the power input to the point where the voltage drop across the sixth transistor R6 exceeds the PN junction voltage (typically 0.6V), turning on Q2. At this point, the collector-to-emitter impedance of the second transistor Q2 decreases dramatically, forming a current path through resistors R5, R8, and R9. At this point, the third transistor Q3 turns on, pulling down the Stoff line and, in turn, pulling up the gate line (Mgate).

[0081] Therefore, the pull-up action on the gate line (Mgate line) caused by the above two abnormal detection results can make Mswitch tend to be closed, causing the current to drop and the distribution output voltage to drop until the distribution is completely turned off, thereby realizing the gate control function of the power P-MOSFET switch tube.

[0082] The second capacitor C2 is a voltage detection filter capacitor, which can reduce the probability of false shutdown. Specifically, when the output voltage drops rapidly across the undervoltage threshold, it will recover instantly.

[0083] In this embodiment, the undervoltage detection module simultaneously detects the output voltage when it is powered on. If the output voltage is low, transistors Q2 and Q3 are both turned on, pulling up the gate line (Mgate line). Therefore, the power distribution channel remains in the OFF state during the undervoltage detection module power-up process.

[0084] Among them, the undervoltage threshold V th The calculation can be achieved using the following formula (2):

[0085] Among them, V BAT is the voltage value of the input power supply; Vout is the working voltage value required by the circuit load, V d is the forward voltage of diode D1.

[0086] Returning to FIG1 , the state control module further includes:

[0087] An OFF excitation processing unit, one end of which is connected to the OFF excitation signal output line of the MCU, and the other end of which is connected to the first control line;

[0088] An ON excitation processing unit, one end of which is connected to the ON excitation signal output line of the MCU, and the other end is connected to the collector of the second transistor Q2 in the undervoltage detection module through a second control line (Ston);

[0089] The ON excitation signal is a high-level signal, and the OFF excitation signal is a low-level signal.

[0090] More specifically, as shown in FIG4 , the ON excitation processing unit includes:

[0091] The ON excitation transistor Qdpon is an NPN transistor, whose base is connected to the ON excitation signal output end of the MCU through the first voltage divider resistor Rdp1, and its base is grounded through the second voltage divider resistor Rdp2; its emitter is connected to its base; and its collector is connected to the second control line.

[0092] Similarly, with reference to FIG6 , the OFF excitation processing unit includes:

[0093] The OFF excitation transistor Qdpoff is an NPN transistor, whose base is connected to the OFF excitation signal output end of the MCU through the third voltage-dividing resistor Rdp3, and its base is grounded through the fourth voltage-dividing resistor Rdp4; its emitter is connected to its base; and its collector is connected to the first control line.

[0094] As shown in FIG5 , the voltage acquisition module can be implemented by using a resistor string voltage divider. The voltage acquisition module further includes:

[0095] A first sampling resistor Radc1 has a first end connected to the power distribution output end, a second end connected to the ground via a second sampling resistor Radc2 , and the second end connected to the voltage sampling end of the MCU.

[0096] In this application, the state self-locking loop used is based on the principle of achieving state self-locking through a positive feedback loop of the circuit device process. The two levels of steady state in the state self-locking loop correspond to the ON and OFF states of the distribution channel respectively. At the same time, due to the existence of the self-locking mechanism, the current state can be maintained by itself before power is turned off. The state setting and rewriting operations are achieved by injecting a stronger charge excitation than the node driving level at a specific node of the loop, so that the state of the loop can be set or rewritten to the state of the excitation attribute. The duration of the specific charge excitation pulse is related to the distribution capacitor load. The heavier the capacitor load, the longer the duration. The specific duration should be debugged and determined using simulation means.

[0097] Referring also to FIG6 , in the present application, a four-stage cascaded positive feedback loop of inverting amplifier circuits is constructed with transistors Q2->Q3->Q1->Mswitch as the core. Compared to the typical two-stage gain stage in the prior art, the four-stage gain has a greater loop gain. It is understood that in the present application, the gain of each of the four stages is customizable (as shown in the aforementioned formulas), allowing for a greater loop gain to be designed. According to the feedback control principle in control theory, the greater the open-loop gain, the stronger the locking capability, stability, and anti-interference ability of the closed-loop loop. Therefore, the state self-locking loop in the present application has a stronger locking capability and stability. Simultaneously, applying a strong pull-down stimulus to the Ston line can turn off Q3 and Q1 within the self-locking loop and turn on Mswitch and Q2, thereby setting the power distribution channel to the ON state. Applying a strong pull-down stimulus to the Stoff line can turn on Q3 and Q1 within the self-locking loop and turn off Mswitch and Q2, thereby setting the power distribution channel to the OFF state. The MCU sends a pulse lasting a certain time (1 to 5ms) to the OFF excitation processing unit or the ON excitation processing unit to pull down the corresponding self-locking link node, thereby realizing the setting and rewriting of the power distribution state.

[0098] In the present application, the gain of each amplifier stage in the self-locking loop is proportional to the load impedance, and the load impedance is basically determined by the resistance of the output end of each stage, ensuring that the variation in various extreme scenarios is minimized. Equations 3 to 6 calculate the small-signal AC impedance Zo1, Zo2, Zo3, and Zo4 of each amplifier stage.

[0099] The output small signal AC loads Zo1, Zo2, Zo3, and Zo4 of each inverting amplifier stage of the self-locking loop are determined by the following formulas: o1 =R9………………………………(3) Z o4 =R load ………………………………………(6)

[0100] Where Rload is the load impedance of the power distribution output.

[0101] In order to further illustrate the principles and advantages of the circuit of the present application, the following examples are given.

[0102] Take the circuit schematic shown in Figure 6 as an example. This is a 12V in-vehicle high-side power distribution unit circuit. Its rated current is 500mA, the overcurrent threshold is 1.2A, and the undervoltage threshold is 4.2V. The PNP transistor is 2N3906, the NPN transistor is 2N3904, and the diode is 1N4148. The resistor values ​​are: Rsense = 1 ohm, R1 = R2 = R6 = R7 = R8 = R9 = 47k ohms, R3 = 400k ohms, R4 = 100k ohms, and R5 = 200k ohms. C1 = C2 = 10nF. The default threshold voltage for the diode and transistor is 0.6V.

[0103] Among them, the overcurrent threshold is calculated according to formula (1), and its overcurrent threshold I th It is 1.2A.

[0104] Calculate the voltage threshold according to formula (2), and its undervoltage threshold V th About 7 V be , which is 4.2V.

[0105] The circuit of the embodiment was imported into a simulation tool, and three test cases were applied to perform functional simulation verification. The obtained simulation curves are shown in FIG. 7 to FIG. 9 .

[0106] Figure 7 shows the simulated waveform of the power distribution output obtained by applying the excitation signal under simulated test excitation 1 to the circuit of the embodiment. After power-on, the power distribution state is OFF. At 0.4 and 0.9 seconds, the MCU sends a high pulse lasting 2ms to Ston, turning the power distribution OFF state to ON. At 0.6 and 1.1 seconds, the load experiences a short-circuit to ground fault lasting 2ms, turning the power distribution ON state to OFF. The overall circuit function of the embodiment meets expectations.

[0107] Figure 8 shows the simulated waveform of the power distribution output obtained by applying the excitation signal under simulation test excitation 2 to the circuit of the embodiment. After power-on, the power distribution state is OFF. At 0.4 seconds and 0.9 seconds, the MCU sends a high pulse lasting 2ms to Ston, turning the power distribution OFF state to ON. At 0.55 seconds and 1.05 seconds, the MCU sends a high pulse lasting 2ms to Stoff, turning the power distribution ON state to OFF. The overall circuit function of the embodiment meets expectations.

[0108] As shown in Figure 9, the simulation waveform of the power distribution output obtained by applying the excitation signal under the simulation test excitation 3 to the circuit of the embodiment is shown. Among them, the power distribution state is OFF after power-on; at 0.4 seconds and 0.9 seconds, the MCU sends a high pulse lasting 2ms to Ston, and the power distribution OFF state is turned to ON state; at 0.6 seconds and 1.1 seconds, the MCU sends a high pulse lasting 2ms to Stoff, and the power distribution ON state is turned to OFF state. The overall circuit function of the embodiment meets expectations. At 0.55 seconds and 1.05 seconds, the load experiences a 5.5V undervoltage glitch interference lasting 100us, and the power distribution fluctuates briefly, but successfully remains in the ON state, and the function meets expectations.

[0109] Accordingly, another aspect of the present application further provides a vehicle comprising the vehicle-mounted high-side power distribution control circuit as described above in Figures 1 to 6. More details can be referred to and combined with the above description of Figures 1 to 6, and will not be repeated here.

[0110] The implementation of the embodiments of the present application has the following beneficial effects:

[0111] The present application provides a vehicle-mounted high-side power distribution control circuit and vehicle. A vehicle-mounted high-side power distribution control circuit that integrates fault detection and state self-locking loop is formed by adopting a four-stage inverting amplifier. In the obtained circuit, the structure is compact and integrated with the detection branch and the state self-locking loop, its state can be set independently, and the overcurrent and undervoltage thresholds can be flexibly adjusted. When an abnormality occurs in the circuit (overcurrent or undervoltage), the distribution channel can be quickly closed to protect the load, the wiring harness, and the load-level distribution power devices; after the status and fault are eliminated, a trigger pulse is sent through the MCU to change the self-locking loop state to realize the opening and closing control of the distribution channel. Therefore, the implementation of this application can ensure the high effectiveness of the circuit while maximizing the robustness of the high-side output circuit.

[0112] In the typical circuit of the embodiment of the present application, in addition to using a power field-effect transistor (P-MOSFET) and a current sampling resistor, its core loop circuit only uses three transistors, a diode, and several common components such as resistors and capacitors. It does not require complex components such as operational amplifiers, comparators, optocouplers, and relays. This can minimize hardware costs and facilitate implementation while maintaining lower power consumption and failure rates. In other examples, even if the above-mentioned transistors are replaced with MOS tubes, the cost is very low.

[0113] In the embodiment of the present application, the power distribution state is accurately controllable, wherein the ON / OFF state of the switch unit can be set by the MCU with an independent pulse, and is determined to be in the OFF state when the circuit is powered on, which can avoid accidental start-up; at the same time, the detection state is coupled with the self-locking state, and the static current is low; and the circuit has maximum robustness, and the gain of each level can be customized, and the gain change in various extreme scenarios is minimized. The response scenario is very flexible and can be applied to various vehicle models.

[0114] Those skilled in the art will appreciate that the embodiments of the present application can be provided as methods, devices, or computer program products. Therefore, the present application can adopt the form of a complete hardware embodiment, a complete software embodiment, or an embodiment in combination with software and hardware. Moreover, the present application can adopt the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to magnetic disk storage, CD-ROM, optical storage, etc.) that contain computer-usable program code.

[0115] The present application is described with reference to the flow chart and / or block diagram of the method, device (system), and computer program product according to the embodiment of the present application. It should be understood that each flow process and / or box in the flow chart and / or block diagram and the combination of the flow process and / or box in the flow chart and / or block diagram can be realized by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processing machine or other programmable data processing device to produce a machine, so that the instructions executed by the processor of the computer or other programmable data processing device produce a device for realizing the function specified in one flow chart flow or multiple flows and / or one box or multiple boxes of the block diagram.

[0116] The above disclosure is only a preferred embodiment of the present application, and certainly cannot be used to limit the scope of rights of the present application. Therefore, equivalent changes made according to the claims of the present application are still within the scope covered by the present application.

Claims

1. A vehicle-mounted high-side power distribution control circuit, characterized in that: At least: The power distribution channel includes a current sampling resistor and a switch unit arranged between the power input terminal and the power distribution output terminal, and is used to output the input power; The current detection and gate control module is used to control the level of the gate of the switch unit connected thereto so that the switch unit is in the off state when it detects that the current on the current sampling resistor exceeds the threshold or receives an OFF excitation signal from the MCU; An undervoltage detection module is connected to the current detection and gate control module and is used to control the switch unit to be in an off state through the current detection and control module when an undervoltage is detected at the power distribution output terminal during the circuit power-on process or after normal operation; and for controlling the switch unit to be in a connected state through the current detection and control module when receiving an ON excitation signal from the MCU; A state control module is used to receive an OFF excitation signal from the MCU and output it to the current detection and gate control module to control the switch unit to be in an off state; and for receiving an ON excitation signal from the MCU and outputting it to the undervoltage detection module to control the switch unit to be in a connected state; The undervoltage detection module, the current detection and gate control module, and the switch unit are connected in series.

2. The circuit according to claim 1, wherein The undervoltage detection module, the current detection and gate control module, and the switch unit form a positive feedback loop, wherein: When the current detection and gate control module detects that the current on the current sampling resistor exceeds the threshold, or receives an OFF excitation signal from the MCU, it controls the gate level of the switch unit connected thereto to be locked at a first level, so that the switch unit is in an off state; When the undervoltage detection module compares that the voltage difference between the power input end and the power output end exceeds a predetermined difference threshold, it controls itself and the current detection and gate control module to perform state self-locking, locks the level of the gate of the switching unit at a first level, and puts the switching unit in an off state; when the undervoltage detection module receives an ON excitation signal from the MCU, it controls itself and the current detection and gate control module to perform state self-locking switching, locks the level of the gate of the switching unit at a second level, and puts the switching unit in a connected state.

3. The circuit according to claim 2, wherein: The undervoltage detection module includes two-pole inverting amplifier tubes, the current detection and gate control module includes a first-stage inverting amplifier tube, and the switch unit forms a first-stage inverting amplifier tube. The three are cascaded to form a positive feedback loop with four-stage inverting amplifier tubes.

4. The circuit according to claim 3, wherein: In the power distribution channel, one end of the current sampling resistor is connected to the power input end, and the other end is connected to the source of the switch unit. The drain of the switch unit is connected to the power distribution output end; the gate of the switch unit is connected to the current detection and gate control module.

5. The circuit according to claim 4, wherein The current detection and gate control module includes: The first transistor Q1 is a PNP transistor, whose emitter is connected to the power input terminal, a first resistor R1 and a first capacitor C1 are connected in parallel between the emitter and the base, and a base is connected to the end of the current sampling resistor away from the power input terminal through the second resistor R2; the collector is grounded through the fourth resistor R4, and the collector is connected to the gate of the switching unit; the base is connected to the gate of the switching unit through the third resistor R3, and the base leads to the first control line.

6. The circuit according to claim 5, wherein: The undervoltage detection module includes: A second transistor Q2 and a third transistor Q3, wherein the second transistor Q2 is a PNP transistor and the third transistor Q3 is an NPN transistor; A sixth resistor R6 and a second capacitor C2 are connected in parallel between the emitter and base of the second transistor Q2; its base is connected to the anode of the diode D1, and the cathode of the diode is connected to the power distribution output terminal via the seventh resistor; its collector is connected to the base of the third transistor Q3 via the eighth resistor R8; The collector of the third transistor Q3 is connected to the first control line, the emitter and base of the third transistor Q3 are connected to the ninth resistor R9, and the emitter of the third transistor Q3 is grounded.

7. The circuit according to claim 6, wherein: The state control module includes: An OFF excitation processing unit, one end of which is connected to the OFF excitation signal output line of the MCU, and the other end is connected to the first control line; An ON excitation processing unit, one end of which is connected to the ON excitation signal output line of the MCU, and the other end of which is connected to the collector of the second transistor Q2 in the undervoltage detection module through a second control line; The ON excitation signal is a high-level signal, and the OFF excitation signal is a low-level signal.

8. The circuit according to claim 7, wherein: The ON excitation processing unit includes: The ON excitation transistor is an NPN transistor, whose base is connected to the ON excitation signal output end of the MCU through a first voltage-dividing resistor, and whose base is grounded through a second voltage-dividing resistor; its emitter is connected to its base; and its collector is connected to the second control line.

9. The circuit according to claim 7, wherein: The OFF excitation processing unit includes: The OFF excitation transistor is an NPN transistor, whose base is connected to the OFF excitation signal output terminal of the MCU through the third voltage-dividing resistor, and whose base is grounded through the fourth voltage-dividing resistor; its emitter is connected to its base; and its collector is connected to the first control line.

10. The circuit according to any one of claims 1 to 9, characterized in that include: The voltage sampling module is connected to the power distribution output terminal and is used to sample the voltage of the power distribution output terminal and output it to the MCU.

11. The circuit according to claim 10, wherein: The switch unit is a power field effect transistor.

12. A vehicle, characterized in that: It comprises the vehicle-mounted high-side power distribution control circuit according to any one of claims 1 to 11.

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