Magnetization rotating element, magnetoresistive element, and magnetic memory

Abstract

This magnetization rotating element comprises a wiring layer and a first ferromagnetic layer connected to the wiring layer, and the wiring layer includes a quasicrystal.

Description

Magnetization rotating element, magnetoresistive effect element, and magnetic memory

[0001] The present disclosure relates to a magnetization rotating element, a magnetoresistive element, and a magnetic memory.

[0002] Giant magnetoresistance (GMR) elements, which are made up of multilayer films of ferromagnetic layers and non-magnetic layers, and tunnel magnetoresistance (TMR) elements, which use an insulating layer (tunnel barrier layer or barrier layer) as the non-magnetic layer, are known as magnetoresistance effect elements. Magnetoresistance effect elements can be applied to magnetic sensors, high-frequency components, magnetic heads, and non-volatile random access memories (MRAMs).

[0003] MRAM is a memory device that integrates magnetoresistive elements. MRAM reads and writes data by utilizing the property that the resistance of a magnetoresistive element changes when the magnetization directions of two ferromagnetic layers sandwiching a nonmagnetic layer in the magnetoresistive element change. The magnetization direction of the ferromagnetic layer is controlled, for example, by using a magnetic field generated by a current. Alternatively, the magnetization direction of the ferromagnetic layer can be controlled by using spin transfer torque (STT) generated by passing a current in the stacking direction of the magnetoresistive element.

[0004] When the magnetization direction of the ferromagnetic layer is rewritten using STT, a current flows in the stacking direction of the magnetoresistive element, and the write current causes deterioration of the characteristics of the magnetoresistive element.

[0005] In recent years, attention has been focused on methods that do not require current to flow in the stacking direction of a magnetoresistive element during writing (see, for example, Patent Document 1). One such method is a writing method that utilizes spin-orbit torque (SOT). SOT is induced by spin current generated by spin-orbit interaction or the Rashba effect at the interface of different materials. The current used to induce SOT in a magnetoresistive element flows in a direction that intersects with the stacking direction of the magnetoresistive element. In other words, magnetization rotation using SOT does not require current to flow in the stacking direction of the magnetoresistive element, and is expected to extend the life of the magnetoresistive element.

[0006] Japanese Patent Application Laid-Open No. 2017-216286

[0007] A magnetic memory has multiple integrated magnetoresistive elements. As the amount of current applied to each magnetoresistive element increases, the power consumption of the magnetic memory increases. There is a demand for reducing the amount of current applied to each magnetoresistive element to suppress the power consumption of the magnetic memory.

[0008] The present disclosure has been made in view of the above circumstances, and has an object to provide a magnetization rotation element, a magnetoresistive effect element, and a magnetic memory that can operate with a small amount of current.

[0009] To solve the above problems, the present disclosure provides the following means.

[0010] A magnetization rotating element according to a first aspect includes a wiring layer and a first ferromagnetic layer connected to the wiring layer, the wiring layer including a quasicrystal.

[0011] The magnetization rotating element, magnetoresistive element, and magnetic memory according to the present disclosure operate with a small amount of current.

[0012] 1 is a circuit diagram of a magnetic memory according to a first embodiment. FIG. 1 is a cross-sectional view of a characteristic portion of the magnetic memory according to the first embodiment. FIG. 2 is a cross-sectional view of a magnetoresistive effect element according to the first embodiment. FIG. 3 is a plan view of a magnetoresistive effect element according to the first embodiment. FIG. 4 is a schematic diagram for explaining quasicrystals. FIG. 5 is a cross-sectional view of a magnetoresistive effect element according to a second embodiment. FIG. 6 is a cross-sectional view of a magnetoresistive effect element according to a modified example of the second embodiment. FIG. 7 is a cross-sectional view of a magnetoresistive effect element according to a third embodiment. FIG. 8 is a cross-sectional view of a magnetoresistive effect element according to a modified example of the third embodiment. FIG. 9 is a cross-sectional view of a magnetoresistive effect element according to a modified example of the fourth embodiment. FIG. 10 is a cross-sectional view of a magnetoresistive effect element according to a modified example of the fourth embodiment. FIG. 11 is a cross-sectional view of a magnetoresistive effect element according to a fifth embodiment. FIG. 12 is a cross-sectional view of a magnetoresistive effect element according to a sixth embodiment. FIG. 13 is a cross-sectional view of a magnetoresistive effect element according to a seventh embodiment. FIG. 14 is a cross-sectional view of a magnetization rotation element according to an eighth embodiment.

[0013] The present embodiment will be described in detail below with reference to the accompanying drawings. The drawings used in the following description may show characteristic portions enlarged for ease of understanding, and the dimensional ratios of each component may differ from the actual ones. The materials, dimensions, etc. exemplified in the following description are merely examples, and the present disclosure is not limited thereto. Appropriate modifications can be made within the scope of the present disclosure.

[0014] First, directions will be defined. One direction on one surface of a substrate Sub (see FIG. 2) described later is defined as the x-direction, and the direction perpendicular to the x-direction is defined as the y-direction. The x-direction is, for example, the longitudinal direction of the spin orbit torque wiring 20. The z-direction is a direction perpendicular to the x-direction and the y-direction. The z-direction is an example of the stacking direction in which each layer is stacked. The z-direction is an example of the thickness direction. Hereinafter, the +z direction may be expressed as "up" and the -z direction as "down". Up and down do not necessarily coincide with the direction in which gravity is applied.

[0015] In this specification, "extending in the x-direction" means, for example, that the dimension in the x-direction is larger than the smallest dimension among the dimensions in the x-direction, y-direction, and z-direction. The same applies to extending in other directions. Furthermore, in this specification, "connection" is not limited to physical connection. For example, "connection" is not limited to when two layers are physically in contact with each other, but also includes when two layers are connected with another layer sandwiched between them. Furthermore, in this specification, "connection" also includes electrical connection.

[0016] 1 is a configuration diagram of a magnetic memory 200 according to a first embodiment. The magnetic memory 200 includes a plurality of magnetoresistive effect elements 100, a plurality of write wirings WL, a plurality of common wirings CL, a plurality of read wirings RL, a plurality of first switch elements Sw1, a plurality of second switch elements Sw2, and a plurality of third switch elements Sw3. In the magnetic memory 200, for example, the magnetoresistive effect elements 100 are arranged in a matrix.

[0017] Each write wiring WL electrically connects a power supply to one or more magnetoresistive effect elements 100. Each common wiring CL is a wiring used both when writing and reading data. Each common wiring CL electrically connects a reference potential to one or more magnetoresistive effect elements 100. The reference potential is, for example, ground. The common wiring CL may be provided for each of the multiple magnetoresistive effect elements 100, or may be provided across the multiple magnetoresistive effect elements 100. Each read wiring RL electrically connects a power supply to one or more magnetoresistive effect elements 100. The power supply is connected to the magnetic memory 200 during use.

[0018] Each magnetoresistive element 100 is connected to a first switch element Sw1, a second switch element Sw2, and a third switch element Sw3, respectively. The first switch element Sw1 is connected between the magnetoresistive element 100 and a write wiring WL. The second switch element Sw2 is connected between the magnetoresistive element 100 and a common wiring CL. The third switch element Sw3 is connected to a read wiring RL that spans the multiple magnetoresistive elements 100.

[0019] When predetermined first switch element Sw1 and second switch element Sw2 are turned ON, a write current flows between the write wiring WL and the common wiring CL connected to the predetermined magnetoresistive effect element 100. The flow of the write current causes data to be written to the predetermined magnetoresistive effect element 100. When predetermined second switch element Sw2 and third switch element Sw3 are turned ON, a read current flows between the common wiring CL and the read wiring RL connected to the predetermined magnetoresistive effect element 100. The flow of the read current causes data to be read from the predetermined magnetoresistive effect element 100.

[0020] The first switch element Sw1, the second switch element Sw2, and the third switch element Sw3 are elements that control the flow of current. The first switch element Sw1, the second switch element Sw2, and the third switch element Sw3 are, for example, elements that utilize a phase change of a crystal layer such as a transistor or an Ovonic Threshold Switch (OTS), elements that utilize a change in band structure such as a Metal-Insulator Transition (MIT) switch, elements that utilize a breakdown voltage such as a Zener diode or an avalanche diode, or elements that change conductivity with a change in atomic position.

[0021] 1 is shared by the magnetoresistive effect elements 100 connected to the same read wiring RL. The third switch element Sw3 may be provided in each magnetoresistive effect element 100. Alternatively, the third switch element Sw3 may be provided in each magnetoresistive effect element 100, and the first switch element Sw1 or the second switch element Sw2 may be shared by the magnetoresistive effect elements 100 connected to the same wiring.

[0022] 2 is a cross-sectional view of a characteristic portion of the magnetic memory 200 according to the first embodiment. Fig. 2 is a cross-section of the magnetoresistive element 100 taken along an xz plane passing through the center of the width in the y direction of the spin orbit torque wiring 20, which will be described later.

[0023] The first switch element Sw1 and the second switch element Sw2 shown in Fig. 2 are transistors Tr. The third switch element Sw3 is electrically connected to the read wiring RL and is located at a different position in the x direction in Fig. 2, for example. The transistor Tr is, for example, a field-effect transistor, and has a gate electrode G, a gate insulating film GI, and a source S and a drain D formed on a substrate Sub. The source S and the drain D are determined by the direction of current flow, and the positional relationship between the source S and the drain D may be reversed. The substrate Sub is, for example, a semiconductor substrate.

[0024] The transistor Tr and the magnetoresistive effect element 100 are electrically connected via a via wiring V, a first electrode 31, and a second electrode 32. The transistor Tr and the write wiring WL or the common wiring CL are also connected by the via wiring V. The via wiring V extends, for example, in the z direction. The read wiring RL is connected to the stack 10 via an electrode E. The via wiring V and the electrode E contain a conductive material. The via wiring V and the first electrode 31 may be integrated. The via wiring V and the second electrode 32 may be integrated. That is, the first electrode 31 may be part of the via wiring V, and the second electrode 32 may be part of the via wiring V.

[0025] The magnetoresistive element 100 and the transistor Tr are surrounded by an insulating layer 90. The insulating layer 90 is an insulating layer that provides insulation between the wirings of the multilayer wiring and between the elements. The insulating layer 90 is made of, for example, silicon oxide (SiO ｘ ), silicon nitride (SiN ｘ ), silicon carbide (SiC), chromium nitride, silicon carbonitride (SiCN), silicon oxynitride (SiON), aluminum oxide (Al ２ O ３ ), zirconium oxide (ZrO ｘ ), magnesium oxide (MgO), aluminum nitride (AlN), etc.

[0026] Fig. 3 is a cross-sectional view of the magnetoresistive element 100. Fig. 3 is a cross-section of the magnetoresistive element 100 cut along an xz plane passing through the center of the y-direction width of the spin orbit torque wiring 20. Fig. 4 is a plan view of the magnetoresistive element 100 as viewed from the z-direction.

[0027] The magnetoresistive element 100 includes, for example, a stacked body 10, a spin orbit torque wiring 20, a first electrode 31, and a second electrode 32. The stacked body 10 has a first ferromagnetic layer 1, a second ferromagnetic layer 2, and a non-magnetic layer 3. The spin orbit torque wiring 20 is an example of a wiring layer. The periphery of the magnetoresistive element 100 is covered with an insulating layer 90.

[0028] The magnetoresistive element 100 is a magnetic element that utilizes spin orbit torque (SOT), and may be called a spin orbit torque type magnetoresistive element, a spin injection type magnetoresistive element, or a spin current magnetoresistive element.

[0029] The magnetoresistive element 100 is an element that records and stores data. The magnetoresistive element 100 records data as the resistance value in the z direction of the stack 10. The resistance value in the z direction of the stack 10 changes when a write current is applied along the spin orbit torque wiring 20 and spins are injected into the stack 10 from the spin orbit torque wiring 20. The resistance value in the z direction of the stack 10 can be read by applying a read current in the z direction of the stack 10.

[0030] The first electrode 31 and the second electrode 32 are connected to the spin orbit torque wiring 20 at positions sandwiching the first ferromagnetic layer 1 when viewed from the z direction. Other layers may be provided between the first electrode 31 and the spin orbit torque wiring 20, and between the second electrode 32 and the spin orbit torque wiring 20.

[0031] The first electrode 31 and the second electrode 32 are, for example, conductors that electrically connect the switch element and the magnetoresistive effect element 100. Both the first electrode 31 and the second electrode 32 are conductive.

[0032] The spin orbit torque wiring 20 extends in the x direction, for example, with its length in the x direction being longer than that in the y direction when viewed from the z direction. A write current flows in the x direction along the spin orbit torque wiring 20 between the first electrode 31 and the second electrode 32. The spin orbit torque wiring 20 is connected to both the first electrode 31 and the second electrode 32.

[0033] The spin-orbit torque wiring 20 generates a spin current by the spin Hall effect when a current flows, and injects spin into the first ferromagnetic layer 1. The spin-orbit torque wiring 20 applies a spin-orbit torque (SOT) to the magnetization of the first ferromagnetic layer 1, sufficient to reverse the magnetization of the first ferromagnetic layer 1. The spin Hall effect is a phenomenon in which, when a current is passed, a spin current is induced in a direction perpendicular to the direction of the current flow based on the spin-orbit interaction. The spin Hall effect is similar to the standard Hall effect in that the direction of movement of moving charges (electrons) is bent. In the standard Hall effect, the direction of movement of charged particles moving in a magnetic field is bent by the Lorentz force. In contrast, in the spin Hall effect, the direction of spin movement is bent simply by the movement of electrons (the flow of current), even in the absence of a magnetic field.

[0034] For example, when a current flows through the spin-orbit torque wiring 20, the first spin polarized in one direction and the second spin polarized in the opposite direction to the first spin are bent by the spin Hall effect in a direction perpendicular to the direction of the current flow. For example, the first spin polarized in the -y direction is bent from the x direction, which is the direction of travel, to the +z direction, and the second spin polarized in the +y direction is bent from the x direction, which is the direction of travel, to the -z direction.

[0035] In non-magnetic materials (materials that are not ferromagnetic), the number of electrons with the first spin generated by the spin Hall effect is equal to the number of electrons with the second spin. In other words, the number of electrons with the first spin facing the +z direction is equal to the number of electrons with the second spin facing the -z direction. The first spins and second spins flow in a direction that eliminates the uneven distribution of spin. When the first spins and second spins move in the z direction, the flow of electric charges cancels each other out, so the amount of current is zero. Spin current that does not involve current is specifically called pure spin current.

[0036] The flow of electrons with the first spin is called J ↑ , the flow of electrons of the second spin is J ↓ , the spin current is J Ｓ Then, J Ｓ =J ↑ -J ↓ The spin current J is defined as Ｓis generated in the z direction. The first spin is injected from the spin orbit torque wiring 20 into the first ferromagnetic layer 1.

[0037] The spin-orbit torque wiring 20 includes a quasicrystal. The crystal structure of the quasicrystal can be identified using electron diffraction or X-ray diffraction using a transmission electron microscope (TEM). FIG. 5 is a schematic diagram for explaining the quasicrystal. The left diagram of FIG. 5 is a schematic diagram of an example of the crystal structure of the quasicrystal. Each of the intersections in the left diagram of FIG. 5 represents an atom. The right diagram of FIG. 5 is an example of an electron diffraction pattern of the crystal structure of the quasicrystal. The radial regular decagonal electron diffraction image shown in the right diagram of FIG. 5 can be obtained only from the quasicrystal, and cannot be obtained from any other crystal structure.

[0038] The composition of the spin orbit torque wire 20 can be determined by quantitative analysis using TEM-EDX (Transmission Electron Microscope-Energy Dispersive X-ray Spectroscopy) or quantitative analysis using EPMA (Electron Probe Micro-Analyzer) mapping. Specifically, quantitative analysis of element content using TEM-EDX or EPMA is performed at three locations on an arbitrary cross section (cross section cut in the thickness direction) of the spin orbit torque wire 20, and the average value is taken as the element content of the spin orbit torque wire 20.

[0039] Quasicrystals are in a state different from both crystals and amorphous states. Crystals have long-range order and a periodic structure. Crystals have rotational symmetry, such as two-fold symmetry, three-fold symmetry, four-fold symmetry, and six-fold symmetry. Amorphous states have neither long-range order nor a periodic structure. Amorphous states also have no rotational symmetry. Quasicrystals have long-range order but no periodic structure. Quasicrystals have rotational symmetry, such as five-fold symmetry, eight-fold symmetry, ten-fold symmetry, and twelve-fold symmetry, which are not found in ordinary crystals. The spin-orbit torque wiring 20 includes at least one of five-fold, eight-fold, ten-fold, and twelve-fold rotational symmetry, for example.

[0040] As shown in the left diagram of Figure 5, quasicrystals do not have translational symmetry. When a part of a quasicrystal is viewed locally, there is a part where the atoms are not regularly arranged. In other words, the quasicrystal has a part that does not have spatial symmetry. In the part that does not have spatial symmetry, a local electric field is generated. This electric field induces spin-orbit interaction in the spin-orbit torque wiring 20, increasing the efficiency of generating spin current. The spin-orbit torque wiring 20 having a quasicrystal can inject a large amount of spins from the spin-orbit torque wiring 20 to the first ferromagnetic layer 1 even when the amount of current flowing through the spin-orbit torque wiring 20 is small.

[0041] The spin orbit torque wiring 20 has at least one of the following structures: a regular octagonal phase, a regular decagonal phase, a regular dodecagonal phase, a regular icosahedral phase, and a regular icosahedral phase. These phases are structures that cannot be achieved by crystals. The regular octagonal phase, the regular decagonal phase, and the regular dodecagonal phase are sometimes called two-dimensional quasicrystals, and the regular dodecahedral phase and the regular icosahedral phase are sometimes called three-dimensional quasicrystals. A two-dimensional quasicrystal has a two-dimensional quasicrystalline structure, and two-dimensional quasicrystalline structures are periodically stacked in the direction of the remaining axis. When the thickness of the spin orbit torque wiring 20 is thin, a two-dimensional quasicrystal is easier to fabricate stably.

[0042] The spin orbit torque wiring 20 includes, for example, any one selected from the group consisting of Li, B, Mg, Al, Si, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Nb, Ag, Hf, Ta, W, Re, Ru, Rh, Pd, Os, Ir, Pt, Au, La, Ce, Sm, Gd, Dy, and Ho. The spin orbit torque wiring 20 preferably includes, as main components, two or three elements selected from the elements belonging to this group. The spin orbit torque wiring 20 may also be a binary alloy in which two elements belonging to this group are bonded, or a ternary alloy in which three elements belonging to this group are bonded.

[0043] The spin orbit torque wiring 20 may be made of, for example, V—Ni—Si, Cr—Ni—Si, Mn—Si, Mn—Si—Al, Mn—Fe—Si, or Al-TM. １ , Al-TM １-B, Al-Ni-Co, Al-Cu-Mn, Al-Cu-Fe, Al-Cu-Ni, Al-Cu-Co, Al-Cu-Co-Si, Al-Mn-Pd, Cr-Ni, V-Ni, TM ２ -Ta, T.M. ２ -Ta-B, TM ３ -W, T.M. ３ -W.-B., T.M. ４ -Pt, TM ４ -Pt-B, TM ５ -Pd, TM ５ -Pd—B.

[0044] Here, TM １ is TM １ =Si, Ir, Pd, Pt, Os, Ru, Rh, Mn, Fe, Co, Ni, Cr, V, Nb, Ag, Hf, Ta, W, Re, Os, Au. TM ２ is TM １ Ta is removed from TM ２ =Si, Ir, Pd, Pt, Os, Ru, Rh, Mn, Fe, Co, Ni, Cr, V, Nb, Ag, Hf, W, Re, Os, Au. TM ３ is TM １ W is removed from TM ３ =Si, Ir, Pd, Pt, Os, Ru, Rh, Mn, Fe, Co, Ni, Cr, V, Nb, Ag, Hf, Ta, Re, Os, Au. TM ４ is TM １ Pt is removed from TM ４ =Si, Ir, Pd, Os, Ru, Rh, Mn, Fe, Co, Ni, Cr, V, Nb, Ag, Hf, Ta, W, Re, Os, Au. TM ５ is TM １ Pd is removed from TM ５ =Si, Ir, Pt, Os, Ru, Rh, Mn, Fe, Co, Ni, Cr, V, Nb, Ag, Hf, Ta, W, Re, Os, Au.

[0045] For example, Cr-Ta-B, Hf-Ta-B, Ir-Ta-B, Nb-Ta-B, Rh-Ta-B, Ru-Ta-B, Ta-V-B, Ta-WB, etc. ２-Ta-B is an example.

[0046] The spin-orbit torque wiring 20 is made of, for example, Al-TM １ It is preferable that Al-TM １ The composition of is not particularly limited. For example, １ The abundance ratio of may be 15 atomic % or more and 45 atomic % or less. In this case, the balance is composed of aluminum and unavoidable impurities. １００－ａ－ｂ TM １ａ and a is TM １ is the composition ratio of unavoidable impurities and satisfies 0≦b≦0.05.

[0047] The spin-orbit torque wiring 20 is made of Al-TM １ -B, TM ２ -Ta-B, TM ３ -W.-B., T.M. ４ -Pt-B, TM ５ The compound may contain B, as represented by -Pd-B. These compounds can produce quasicrystals by appropriately setting the substrate temperature during film formation and the heat treatment conditions after film formation, making it easy to fabricate a quasicrystalline spin orbit torque wiring 20. Furthermore, the use of these compounds makes it easy to partially make a portion of the quasicrystalline spin orbit torque wiring 20 crystalline or amorphous. When the spin orbit torque wiring 20 contains B, the composition of B is preferably 20 atomic % or less of the total amount.

[0048] The composition of the spin orbit torque wiring 20 may have a concentration gradient in the thickness direction or in the film plane direction. １ In this case, the TM of the portion close to the first ferromagnetic layer 1 is １ The density of the TM of the far side １ In this case, the first spins can be efficiently injected from the spin-orbit torque wiring 20 into the first ferromagnetic layer 1.

[0049] Furthermore, the spin orbit torque wiring 20 preferably contains any one selected from the group consisting of Hf, Ta, W, Re, Ru, Rh, Pd, Os, Ir, Pt, and Au. These heavy metals scatter the spins flowing in the spin orbit torque wiring 20. Spin scattering increases the probability that the spins flowing in the spin orbit torque wiring 20 are injected from the spin orbit torque wiring 20 into the first ferromagnetic layer 1. These heavy metals may exist as part of the atoms constituting the quasicrystal (for example, one element constituting an alloy), or may be scattered as simple atoms within the spin orbit torque wiring 20.

[0050] The thickness of the spin orbit torque wire 20 is, for example, 2 nm or more. The thickness of the spin orbit torque wire 20 may be, for example, 20 nm or less.

[0051] The stack 10 is connected to the spin orbit torque wiring 20. The stack 10 is, for example, stacked on the spin orbit torque wiring 20. Other layers may be present between the stack 10 and the spin orbit torque wiring 20.

[0052] The resistance value in the z direction of the stack 10 changes when spins are injected from the spin orbit torque wiring 20 into the stack 10 (first ferromagnetic layer 1 ).

[0053] The stack 10 is sandwiched in the z direction between the spin-orbit torque wiring 20 and the electrode E (see FIG. 2 ). The stack 10 is a columnar body. The shape of the stack 10 in plan view from the z direction is, for example, circular, elliptical, or rectangular. The side surface of the stack 10 is, for example, inclined with respect to the z direction.

[0054] The stack 10 includes, for example, a first ferromagnetic layer 1, a second ferromagnetic layer 2, and a non-magnetic layer 3. The first ferromagnetic layer 1 is in contact with, for example, a spin orbit torque wiring 20 and is stacked on the spin orbit torque wiring 20. Spins are injected into the first ferromagnetic layer 1 from the spin orbit torque wiring 20. The magnetization of the first ferromagnetic layer 1 is subjected to a spin orbit torque (SOT) by the injected spins, and the orientation direction of the magnetization changes. The first ferromagnetic layer 1 and the second ferromagnetic layer 2 sandwich the non-magnetic layer 3 in the z direction.

[0055] The first ferromagnetic layer 1 and the second ferromagnetic layer 2 each have a magnetization. The magnetization of the second ferromagnetic layer 2 is less likely to change orientation than the magnetization of the first ferromagnetic layer 1 when a predetermined external force is applied. The first ferromagnetic layer 1 is sometimes referred to as a magnetization free layer, and the second ferromagnetic layer 2 is sometimes referred to as a magnetization fixed layer or a magnetization reference layer. The stack 10 shown in FIG. 3 has a magnetization fixed layer located farther from the substrate Sub than the magnetization free layer, and is called a top-pin structure. The stack 10 may also have a bottom-pin structure, in which the magnetization fixed layer is located closer to the substrate Sub than the magnetization free layer. The resistance value of the stack 10 changes depending on the difference in the relative angle of magnetization between the first ferromagnetic layer 1 and the second ferromagnetic layer 2 sandwiching the nonmagnetic layer 3.

[0056] The first ferromagnetic layer 1 and the second ferromagnetic layer 2 include a ferromagnetic material, such as a metal selected from the group consisting of Cr, Mn, Co, Fe, and Ni, an alloy containing one or more of these metals, or an alloy containing one or more of these metals and at least one of B, C, and N. Examples of the ferromagnetic material include Co—Fe, Co—Fe—B, Ni—Fe, a Co—Ho alloy, a Sm—Fe alloy, a Fe—Pt alloy, a Co—Pt alloy, and a CoCrPt alloy.

[0057] The first ferromagnetic layer 1 and the second ferromagnetic layer 2 may include a Heusler alloy. The Heusler alloy may be an XYZ or X ２ The Heusler alloy includes an intermetallic compound having a chemical composition of YZ, where X is a transition metal element or a noble metal element of the Co, Fe, Ni, or Cu group on the periodic table, Y is a transition metal element or an element species of X of the Mn, V, Cr, or Ti group, and Z is a typical element of groups III to V. The Heusler alloy is, for example, Co ２ FeSi, Co ２ FeGe, Co ２ FeGa, Co ２ MnSi, Co ２ Mn １－ａ Fe ａ Al ｂ Si １－ｂ , Co ２ FeGe １－ｃ Ga ｃ etc. Heusler alloys have high spin polarization.

[0058] The non-magnetic layer 3 includes a non-magnetic material. When the non-magnetic layer 3 is an insulator (when it is a tunnel barrier layer), the material thereof is, for example, Al ２ O ３ , SiO ２ , MgO, and MgAl ２ O ４ In addition to these, materials in which a part of Al, Si, or Mg is replaced with Zn, Be, or the like can also be used for the nonmagnetic layer 3. Among these, MgO and MgAl ２ O ４ is a material that can realize coherent tunneling. When the non-magnetic layer 3 is a metal, Cu, Au, Ag, etc. can be used as the material. Furthermore, when the non-magnetic layer 3 is a semiconductor, Si, Ge, CuInSe, etc. can be used as the material. ２ , CuGaSe ２ , Cu(In,Ga)Se ２ etc. can be used.

[0059] The stack 10 may include layers other than the first ferromagnetic layer 1, the second ferromagnetic layer 2, and the non-magnetic layer 3. For example, an underlayer may be provided between the spin-orbit torque wiring 20 and the first ferromagnetic layer 1. The underlayer improves the crystallinity of each layer constituting the stack 10. Furthermore, for example, the stack 10 may include a cap layer on the top surface thereof.

[0060] The stack 10 may also include a ferromagnetic layer provided on the surface of the second ferromagnetic layer 2 opposite the nonmagnetic layer 3, with a spacer layer interposed therebetween. The second ferromagnetic layer 2, the spacer layer, and the ferromagnetic layer form a synthetic antiferromagnetic structure (SAF structure). The synthetic antiferromagnetic structure is composed of two magnetic layers sandwiching a nonmagnetic layer. Antiferromagnetic coupling between the second ferromagnetic layer 2 and the ferromagnetic layer increases the coercive force of the second ferromagnetic layer 2 compared to a case where the ferromagnetic layer is not provided. The ferromagnetic layer may be, for example, IrMn or PtMn. The spacer layer may include, for example, at least one selected from the group consisting of Ru, Ir, and Rh.

[0061] Next, a method for manufacturing the magnetoresistive element 100 will be described. The magnetoresistive element 100 is formed by a process of stacking each layer and a process of processing a portion of each layer into a predetermined shape. The layers can be stacked by sputtering, chemical vapor deposition (CVD), electron beam evaporation (EB evaporation), atomic laser deposition (ALD), or the like. The layers can be processed by photolithography or the like.

[0062] First, impurities are doped into predetermined positions of the substrate Sub to form a source S and a drain D. Next, a gate insulating film GI and a gate electrode G are formed between the source S and the drain D. The source S, the drain D, the gate insulating film GI, and the gate electrode G form a transistor Tr. A commercially available semiconductor circuit substrate on which a transistor Tr is formed may be used as the substrate Sub.

[0063] Next, an insulating layer 90 is formed so as to cover the transistor Tr. Openings are formed in the insulating layer 90, and the openings are filled with a conductor to form the via wiring V, the first electrode 31, and the second electrode 32. The write wiring WL and the common wiring CL are formed by laminating the insulating layer 90 to a predetermined thickness, forming grooves in the insulating layer 90, and filling the grooves with a conductor.

[0064] Next, a layer that will become the spin orbit torque wiring 20 is formed on one surface of the insulating layer 90, the first electrode 31, and the second electrode 32. The spin orbit torque wiring 20 is fabricated so that quasicrystals are formed inside. Methods for fabricating quasicrystals include rolling, sputtering, ion plating, vapor deposition, hot-dip plating, thermal spraying, rapid solidification, and electroplating.

[0065] For example, raw materials weighed at a desired atomic ratio are melted in an arc melting furnace in an inert atmosphere (e.g., an argon atmosphere) to produce a master alloy. The produced master alloy is then heat-treated in a vacuum or an inert atmosphere (e.g., an argon atmosphere) to produce a quasicrystal. The temperature and time of the heat treatment are controlled so as to produce a quasicrystal. For example, the heat treatment temperature is 650°C or higher and 950°C or lower. For example, the heat treatment time is 12 hours or higher and 24 hours or lower.

[0066] Quasicrystals can also be produced by a deposition method such as PLD (Pulse Laser Deposition) or sputtering. In this case, a film formation target is first produced using raw metals weighed at a desired atomic ratio. This film formation target and a substrate are placed in a vacuum chamber, and film formation is carried out by controlling the degree of vacuum and the substrate temperature. The degree of vacuum is 10 －４ The pressure is set to 200°C or higher and 400°C or lower. When forming a quasicrystalline film, heat treatment is performed at a predetermined temperature after film formation. The temperature of the heat treatment is controlled to 250°C or higher and 450°C or lower. The laser used during film formation is a Nd pulse laser (λ: 527 nm, τ = 250 fs, 10 Hz).

[0067] Next, a ferromagnetic layer, a non-magnetic layer, a ferromagnetic layer, and a hard mask layer are stacked in this order on the layer that will become the spin orbit torque wiring 20. Next, the hard mask layer is processed into a predetermined shape. The predetermined shape is, for example, the outer shape of the spin orbit torque wiring 20. Next, via the hard mask layer, the layer that will become the spin orbit torque wiring 20, the ferromagnetic layer, the non-magnetic layer, and the ferromagnetic layer are all processed into a predetermined shape at once.

[0068] Next, unnecessary portions of the hard mask layer in the x direction are removed. The hard mask layer becomes the outer shape of the stack 10. Next, unnecessary portions of the stack formed on the spin orbit torque wiring 20 in the x direction are removed via the hard mask layer. The stack 10 is processed into a predetermined shape to become the stack 10. The hard mask layer becomes the electrode E. Next, an insulating layer 90 is filled in around the stack 10 and the spin orbit torque wiring 20, and the magnetoresistive effect element 100 is obtained.

[0069] In the magnetoresistive element 100 according to the first embodiment, the spin orbit torque wiring 20 contains a quasicrystal, and therefore the efficiency of spin injection from the spin orbit torque wiring 20 to the first ferromagnetic layer 1 is high. The spin injection efficiency is the amount of spin injected from the spin orbit torque wiring 20 to the first ferromagnetic layer 1 relative to the amount of current flowing through the spin orbit torque wiring 20.

[0070] The quasicrystal does not have local spatial symmetry and generates a local electric field, which induces spin-orbit coupling in the spin-orbit torque wiring 20 and increases the efficiency of spin injection from the spin-orbit torque wiring 20 to the first ferromagnetic layer 1.

[0071] The magnetoresistive element 100 with high spin injection efficiency can inject the spins required to reverse the magnetization of the first ferromagnetic layer 1 into the first ferromagnetic layer 1 even when the amount of current flowing through the spin orbit torque wiring 20 is small.

[0072] 6 is a cross-sectional view of a magnetoresistive effect element 101 according to a second embodiment. The magnetoresistive effect element 101 according to the second embodiment can be replaced with the magnetoresistive effect element 100 described in the first embodiment. In the second embodiment, the same components as those in the first embodiment are denoted by the same reference numerals, and a description thereof will be omitted.

[0073] The magnetoresistive element 101 has a stack 10 and a spin orbit torque line 21. The spin orbit torque line 21 includes a first layer 21A and a second layer 21B. The first layer 21A and the second layer 21B are located at different positions in the thickness direction (z direction) of the spin orbit torque line 21.

[0074] The first layer 21A includes a quasicrystal. The first layer 21A includes, for example, the same material as the spin orbit torque wiring 20 described above. The second layer 21B includes a crystal. The second layer 21B may be crystalline. The second layer 21B is, for example, a non-magnetic metal with a large atomic number of 39 or greater that has d electrons or f electrons in its outermost shell. The second layer 21B includes, for example, any one selected from the group consisting of Hf, Ta, W, Re, Ru, Rh, Pd, Os, Ir, Pt, and Au.

[0075] The first layer 21A containing quasicrystals and the second layer 21B containing crystals are in different states. Therefore, the spin orbit torque wiring 21 does not have spatial symmetry in the z direction. The spin orbit torque wiring 21 has low spatial symmetry both from a microscopic perspective due to the quasicrystals and from a macroscopic perspective due to the first layer 21A and the second layer 21B. The spin orbit torque wiring 21 with low spatial symmetry generates a local electric field inside and exhibits spin orbit interaction, resulting in high efficiency of spin injection from the spin orbit torque wiring 21 to the first ferromagnetic layer 1.

[0076] The magnetoresistive element 101 with high spin injection efficiency can inject the spins required to reverse the magnetization of the first ferromagnetic layer 1 into the first ferromagnetic layer 1 even when the amount of current flowing through the spin orbit torque wiring 21 is small.

[0077] 6 shows an example in which the second layer 21B is closer to the first ferromagnetic layer 1 than the first layer 21A, but the relative positions of the layers are not particularly important. For example, the first layer 21A may be closer to the first ferromagnetic layer 1 than the second layer 21B. Furthermore, as in the magnetoresistive effect element 101A shown in FIG. 7, the film thicknesses of the first layer 21A and the first layer 21B may be different. For example, the film thicknesses can be designed so that the electrical resistance in the x direction of the first layer 21A and the electrical resistance in the x direction of the second layer 21B are approximately the same.

[0078] 8 is a cross-sectional view of a magnetoresistive effect element 102 according to a third embodiment. The magnetoresistive effect element 102 according to the third embodiment can be substituted for the magnetoresistive effect element 100 according to the first embodiment. In the third embodiment, the same components as those in the first embodiment are denoted by the same reference numerals, and a description thereof will be omitted.

[0079] The magnetoresistive element 102 includes a stack 10 and a spin orbit torque line 22. The spin orbit torque line 22 includes a first layer 22A and a third layer 22C. The first layer 22A and the third layer 22C are located at different positions in the thickness direction (z direction) of the spin orbit torque line 22.

[0080] The first layer 22A includes a quasicrystal. The first layer 22A includes, for example, the same material as the spin orbit torque wiring 20 described above. The third layer 22C includes an amorphous material. The third layer 22C may be amorphous. The third layer 22C is, for example, a non-magnetic metal with a high atomic number of 39 or greater that has d electrons or f electrons in its outermost shell. The third layer 22C includes, for example, any one selected from the group consisting of Hf, Ta, W, Re, Ru, Rh, Pd, Os, Ir, Pt, and Au.

[0081] The first layer 22A containing quasicrystals and the third layer 22C containing amorphous are in different states. Therefore, the spin orbit torque wiring 22 has low spatial symmetry both from a microscopic perspective due to the quasicrystals and from a macroscopic perspective due to the first layer 22A and the third layer 22C. The spin orbit torque wiring 22 with low spatial symmetry generates a local electric field inside and exhibits spin orbit interaction, resulting in high efficiency of spin injection from the spin orbit torque wiring 22 to the first ferromagnetic layer 1.

[0082] The magnetoresistance effect element 102 with high spin injection efficiency can inject the spins required to reverse the magnetization of the first ferromagnetic layer 1 into the first ferromagnetic layer 1 even when the amount of current flowing through the spin orbit torque wiring 22 is small.

[0083] 8 shows an example in which the third layer 22C is closer to the first ferromagnetic layer 1 than the first layer 22A, but the relative positions of the layers are not particularly important. For example, the first layer 22A may be closer to the first ferromagnetic layer 1 than the third layer 22C. Furthermore, as in the magnetoresistive element 102A shown in FIG. 9, the film thickness of the first layer 22A and the film thickness of the third layer 22C may be different. For example, the film thicknesses can be designed so that the electrical resistance in the x direction of the first layer 22A and the electrical resistance in the x direction of the third layer 22C are approximately the same.

[0084] 10 is a cross-sectional view of a magnetoresistive effect element 103 according to a fourth embodiment. The magnetoresistive effect element 103 according to the fourth embodiment can be substituted for the magnetoresistive effect element 100 according to the first embodiment. In the fourth embodiment, the same components as those in the first embodiment are denoted by the same reference numerals, and a description thereof will be omitted.

[0085] The magnetoresistive element 103 has a stack 10 and a spin orbit torque wire 23. The spin orbit torque wire 23 includes a first layer 23A, a second layer 23B, and a third layer 23C. The first layer 23A, the second layer 23B, and the third layer 23C are located at different positions in the thickness direction (z direction) of the spin orbit torque wire 23.

[0086] The first layer 23A includes quasicrystals and has a structure similar to that of the first layer 21A. The second layer 23B includes crystals and has a structure similar to that of the second layer 21B. The third layer 23C includes amorphous material and has a structure similar to that of the third layer 22C.

[0087] The spin orbit torque wiring 23 has low spatial symmetry both from a microscopic point of view due to the quasicrystal and from a macroscopic point of view due to the first layer 23A, the second layer 23B, and the third layer 23C. The spin orbit torque wiring 23 with low spatial symmetry generates a local electric field inside and exhibits spin orbit interaction, so that the efficiency of spin injection from the spin orbit torque wiring 23 to the first ferromagnetic layer 1 is high.

[0088] The magnetoresistive element 103 with high spin injection efficiency can inject the spins required to reverse the magnetization of the first ferromagnetic layer 1 into the first ferromagnetic layer 1 even when the amount of current flowing through the spin orbit torque wiring 23 is small.

[0089] 10 shows an example in which the first layer 23A, the second layer 23B, and the third layer 23C are stacked in this order from the side farthest from the first ferromagnetic layer 1, but the relative positions of the layers are not particularly important. Furthermore, as in the magnetoresistive element 103A shown in FIG. 11 , the film thicknesses of the first layer 23A, the second layer 23B, and the third layer 23C may be different from one another. For example, the film thicknesses can be designed so that the electrical resistance in the x direction of the first layer 23A, the second layer 23B, and the third layer 23C are approximately the same.

[0090] 12 is a cross-sectional view of a magnetoresistive effect element 104 according to a fifth embodiment. The magnetoresistive effect element 104 according to the fifth embodiment can be substituted for the magnetoresistive effect element 100 according to the first embodiment. In the fifth embodiment, the same components as those in the first embodiment are denoted by the same reference numerals, and a description thereof will be omitted.

[0091] The magnetoresistive element 104 includes a stack 10 and a spin orbit torque wiring 24. The spin orbit torque wiring 24 includes a first region 24A and a second region 24B. The first region 24A and the second region 24B are located at different positions in the same layer.

[0092] The first region 24A includes a quasicrystal. The first region 24A includes, for example, the same material as the above-described spin orbit torque wiring 20. The second region 24B includes a crystal. The second region 24B includes, for example, the same material as the above-described second layer 21B.

[0093] The first region 24A containing quasicrystals and the second region 24B containing crystals are in different states. The spin-orbit torque wiring 24 has low spatial symmetry both from a microscopic perspective due to the quasicrystals and from a macroscopic perspective due to the first region 24A and the second region 24B. The spin-orbit torque wiring 24 with low spatial symmetry generates a local electric field inside and exhibits spin-orbit interaction, resulting in high efficiency of spin injection from the spin-orbit torque wiring 24 to the first ferromagnetic layer 1.

[0094] The magnetoresistive element 104 with high spin injection efficiency can inject the spins required to reverse the magnetization of the first ferromagnetic layer 1 into the first ferromagnetic layer 1 even when the amount of current flowing through the spin orbit torque wiring 24 is small.

[0095] 12 shows an example in which the second regions 24B are interspersed within the first regions 24A, but the positional relationship between the layers is not particularly important. For example, the first regions 24A may be interspersed within the second regions 24B.

[0096] The spin orbit torque wiring 24 including the first region 24A and the second region 24B can be fabricated by the PLD method. For example, a Nd pulsed laser (λ: 527 nm, τ = 250 fs, 10 Hz) is used as the laser. First, the entire spin orbit torque wiring 24 is fabricated from quasicrystals using the method described above. The substrate temperature during film formation is set to, for example, 400°C. Next, a portion of the spin orbit torque wiring 24 is locally heated. The local heating is performed by, for example, laser irradiation or microwave irradiation. The locally heated portion is crystallized by controlling the laser or microwave output and irradiation time. Using this procedure, the spin orbit torque wiring 24 including the first region 24A and the second region 24B can be fabricated.

[0097] 13 is a cross-sectional view of a magnetoresistive effect element 105 according to a sixth embodiment. The magnetoresistive effect element 105 according to the sixth embodiment can be substituted for the magnetoresistive effect element 100 according to the first embodiment. In the sixth embodiment, the same components as those in the first embodiment are denoted by the same reference numerals, and a description thereof will be omitted.

[0098] The magnetoresistive element 105 includes a stack 10 and a spin orbit torque wiring 25. The spin orbit torque wiring 25 includes a first region 25A and a third region 25C. The first region 25A and the third region 25C are located at different positions in the same layer.

[0099] The first region 25A includes a quasicrystal. The first region 25A has, for example, the same configuration as the first region 24A described above. The third region 25C includes an amorphous material. The third region 25C includes, for example, the same material as the third layer 22C described above.

[0100] The first region 25A containing quasicrystals and the third region 25C containing amorphous are in different states. The spin orbit torque wiring 25 has low spatial symmetry both from a microscopic perspective due to the quasicrystals and from a macroscopic perspective due to the first region 25A and the third region 25C. The spin orbit torque wiring 25 with low spatial symmetry generates a local electric field inside and exhibits spin orbit interaction, resulting in high efficiency of spin injection from the spin orbit torque wiring 25 to the first ferromagnetic layer 1.

[0101] The magnetoresistive element 105 with high spin injection efficiency can inject the spins required to reverse the magnetization of the first ferromagnetic layer 1 into the first ferromagnetic layer 1 even when the amount of current flowing through the spin orbit torque wiring 25 is small.

[0102] 13 shows an example in which the third region 25C is interspersed within the first region 25A, but the positional relationship between the layers is not particularly important. For example, the first region 25A may be interspersed within the third region 25C.

[0103] The spin orbit torque wiring 25 including the first region 25A and the third region 25C can be fabricated by the PLD method. For example, a Nd pulsed laser (λ: 527 nm, τ = 250 fs, 10 Hz) is used as the laser. First, an amorphous spin orbit torque wiring is fabricated. The amorphous spin orbit torque wiring can be fabricated, for example, by controlling the substrate temperature during film formation to 25°C. Next, a portion of the spin orbit torque wiring 24 is locally heated. The local heating is performed, for example, by laser irradiation or microwave irradiation. The laser or microwave output and irradiation time are controlled to quasicrystallize the locally heated portion. By this procedure, the spin orbit torque wiring 25 including the first region 25A and the third region 25C can be fabricated.

[0104] 14 is a cross-sectional view of a magnetoresistive effect element 106 according to a seventh embodiment. The magnetoresistive effect element 106 according to the seventh embodiment can be replaced with the magnetoresistive effect element 100 according to the first embodiment. In the seventh embodiment, the same components as those in the first embodiment are denoted by the same reference numerals, and a description thereof will be omitted.

[0105] The magnetoresistive element 106 includes a stack 10 and a spin orbit torque wiring 26. The spin orbit torque wiring 26 includes a first region 26A, a second region 26B, and a third region 26C. The first region 26A, the second region 26B, and the third region 26C are located at different positions in the same layer.

[0106] The first region 26A includes a quasicrystal. The first region 26A has, for example, the same configuration as the first region 24A described above. The second region 26B includes a crystal. The second region 26B has, for example, the same configuration as the second region 24B described above. The third region 26C includes an amorphous material. The third region 26C includes, for example, the same material as the third region 25C described above.

[0107] The first region 26A containing quasicrystals, the second region 26B containing crystals, and the third region 26C containing amorphous are in different states. The spin-orbit torque wiring 26 has low spatial symmetry both from a microscopic perspective due to the quasicrystals and from a macroscopic perspective due to the first region 26A, the second region 26B, and the third region 26C. The spin-orbit torque wiring 26 with low spatial symmetry generates a local electric field inside and exhibits spin-orbit interaction, resulting in high efficiency of spin injection from the spin-orbit torque wiring 26 to the first ferromagnetic layer 1.

[0108] The magnetoresistive element 106 with high spin injection efficiency can inject the spins required to reverse the magnetization of the first ferromagnetic layer 1 into the first ferromagnetic layer 1 even when the amount of current flowing through the spin orbit torque wiring 26 is small.

[0109] Although FIG. 14 shows an example in which the second region 26B and the third region 26C are scattered within the first region 26A, the positional relationship between the layers is not particularly important.

[0110] The spin orbit torque wiring 26 including the first region 26A, the second region 26B, and the third region 26C can be fabricated using the PLD method. For example, a Nd pulsed laser (λ: 527 nm, τ = 250 fs, 10 Hz) is used as the laser. First, an amorphous spin orbit torque wiring is fabricated. The amorphous spin orbit torque wiring can be fabricated, for example, by controlling the substrate temperature during film formation to 25°C. Next, a portion of the spin orbit torque wiring 26 is locally heated. The local heating is performed, for example, by laser irradiation or microwave irradiation. The laser or microwave output and irradiation time are controlled to quasicrystallize or crystallize the locally heated portion. The laser or microwave irradiation conditions are set so that the crystallized portion is sufficiently hotter than the quasicrystallized portion. Using this procedure, the spin orbit torque wiring 26 including the first region 26A, the second region 26B, and the third region 26C can be fabricated.

[0111] 15 is a cross-sectional view of a magnetization rotation element 110 according to an eighth embodiment. The magnetization rotation element 110 can be substituted for the magnetoresistive effect element 100 according to the first embodiment.

[0112] The magnetization rotation element 110, for example, irradiates light onto the first ferromagnetic layer 1 and evaluates the light reflected by the first ferromagnetic layer 1. When the orientation direction of magnetization changes due to the magnetic Kerr effect, the polarization state of the reflected light changes. The magnetization rotation element 110 can be used, for example, as an optical element for an image display device or the like that utilizes differences in the polarization state of light.

[0113] In addition, the magnetization rotating element 110 can be used alone as an anisotropic magnetic sensor, an optical element using the magnetic Faraday effect, or the like.

[0114] The spin orbit torque wiring 20 of the magnetization rotation element 110 contains quasicrystals inside. The spin orbit torque wiring 20 can be replaced with the spin orbit torque wiring according to the second to seventh embodiments.

[0115] The magnetization rotation element 110 according to the eighth embodiment is the same as the magnetoresistive element 100 except that the non-magnetic layer 3 and the second ferromagnetic layer 2 are removed, and the same effects as those of the magnetoresistive element 100 according to the first embodiment can be obtained.

[0116] Although preferred aspects of the present disclosure have been described above using several exemplary embodiments, the present disclosure is not limited to these embodiments. For example, the characteristic configurations of each embodiment and modification may be applied to other embodiments and modifications.

[0117] REFERENCE SIGNS LIST 1...first ferromagnetic layer 2...second ferromagnetic layer 3...non-magnetic layer 10...laminated body 20, 21, 22, 23, 24, 25, 26...spin orbit torque wiring 21A, 22A, 23A...first layer 21B, 23B...second layer 22C, 23C...third layer 24A, 25A, 26A...first region 24B, 26B...second region 25C, 26C...third region 31...first electrode 32...second electrode 90...insulating layer 100, 101, 102, 103, 104, 105, 106...magnetoresistive effect element 110...magnetization rotation element 200...magnetic memory

Claims

1. A magnetization rotation element comprising a wiring layer and a first ferromagnetic layer connected to the wiring layer, wherein the wiring layer contains a quasicrystal.

2. A magnetization rotation element comprising a wiring layer and a first ferromagnetic layer connected to the wiring layer, wherein the wiring layer contains at least one of the rotational symmetries of 5-fold, 8-fold, 10-fold, and 12-fold.

3. The magnetization rotation element according to claim 1, wherein the wiring layer contains any one selected from the group consisting of Li, B, Mg, Al, Si, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Nb, Ag, Hf, Ta, W, Re, Ru, Rh, Pd, Os, Ir, Pt, Au, La, Ce, Sm, Gd, Dy, Ho.

4. The magnetization rotation element according to claim 2, wherein the wiring layer contains any one selected from the group consisting of Li, B, Mg, Al, Si, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Nb, Ag, Hf, Ta, W, Re, Ru, Rh, Pd, Os, Ir, Pt, Au, La, Ce, Sm, Gd, Dy, Ho.

5. The magnetization rotation element according to claim 1, wherein the wiring layer contains two or three elements selected from the group consisting of Li, B, Mg, Al, Si, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Nb, Ag, Hf, Ta, W, Re, Ru, Rh, Pd, Os, Ir, Pt, Au, La, Ce, Sm, Gd, Dy, Ho as main components.

6. The magnetization rotation element according to claim 2, wherein the wiring layer contains two or three elements selected from the group consisting of Li, B, Mg, Al, Si, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Nb, Ag, Hf, Ta, W, Re, Ru, Rh, Pd, Os, Ir, Pt, Au, La, Ce, Sm, Gd, Dy, Ho as main components.

7. The wiring layer is composed of any one selected from the group consisting of V-Ni-Si, Cr-Ni-Si, Mn-Si, Mn-Si-Al, Mn-Fe-Si, Al-TM １ (TM １ = Si, Ir, Pd, Pt, Os, Ru, Rh, Mn, Fe, Co, Ni, Cr, V, Nb, Ag, Hf, Ta, W, Re, Os, Au), Al-TM １ -B, Al-Ni-Co, Al-Cu-Mn, Al-Cu-Fe, Al-Cu-Ni, Al-Cu-Co, Al-Cu-Co-Si, Al-Mn-Pd, Cr-Ni, V-Ni, TM ２ -Ta (TM ２ = Si, Ir, Pd, Pt, Os, Ru, Rh, Mn, Fe, Co, Ni, Cr, V, Nb, Ag, Hf, W, Re, Os, Au), TM ２ -Ta-B, TM ３ -W (TM ３ = Si, Ir, Pd, Pt, Os, Ru, Rh, Mn, Fe, Co, Ni, Cr, V, Nb, Ag, Hf, Ta, Re, Os, Au), TM ３ -W-B, TM ４ -Pt (TM ４ = Si, Ir, Pd, Os, Ru, Rh, Mn, Fe, Co, Ni, Cr, V, Nb, Ag, Hf, Ta, W, Re, Os, Au), TM ４ -Pt-B, TM ５ -Pd (TM ５ = Si, Ir, Pt, Os, Ru, Rh, Mn, Fe, Co, Ni, Cr, V, Nb, Ag, Hf, Ta, W, Re, Os, Au), TM ５ The magnetization rotation element according to claim 1, comprising any one selected from the group consisting of -Pd-B.

8. The wiring layer is composed of any one selected from the group consisting of V-Ni-Si, Cr-Ni-Si, Mn-Si, Mn-Si-Al, Mn-Fe-Si, Al-TM １ (TM １ = Si, Ir, Pd, Pt, Os, Ru, Rh, Mn, Fe, Co, Ni, Cr, V, Nb, Ag, Hf, Ta, W, Re, Os, Au), Al-TM １ -B, Al-Ni-Co, Al-Cu-Mn, Al-Cu-Fe, Al-Cu-Ni, Al-Cu-Co, Al-Cu-Co-Si, Al-Mn-Pd, Cr-Ni, V-Ni, TM ２ -Ta (TM ２ = Si, Ir, Pd, Pt, Os, Ru, Rh, Mn, Fe, Co, Ni, Cr, V, Nb, Ag, Hf, W, Re, Os, Au), TM ２ -Ta-B, TM ３ -W (TM ３ = Si, Ir, Pd, Pt, Os, Ru, Rh, Mn, Fe, Co, Ni, Cr, V, Nb, Ag, Hf, Ta, Re, Os, Au), TM ３ -W-B, TM ４ -Pt (TM ４ = Si, Ir, Pd, Os, Ru, Rh, Mn, Fe, Co, Ni, Cr, V, Nb, Ag, Hf, Ta, W, Re, Os, Au), TM ４ -Pt-B, TM ５ -Pd (TM ５ = Si, Ir, Pt, Os, Ru, Rh, Mn, Fe, Co, Ni, Cr, V, Nb, Ag, Hf, Ta, W, Re, Os, Au), TM ５ The magnetization rotation element according to claim 2, comprising any one selected from the group consisting of -Pd-B.

9. The magnetization rotation element according to claim 1, wherein the wiring layer contains any one selected from the group consisting of Hf, Ta, W, Re, Ru, Rh, Pd, Os, Ir, Pt, Au.

10. The magnetization rotation element according to claim 2, wherein the wiring layer contains any one selected from the group consisting of Hf, Ta, W, Re, Ru, Rh, Pd, Os, Ir, Pt, Au. [[ID= 12. The wiring layer has a structure of at least one of a regular octagonal phase, a regular decagonal phase, and a regular dodecagonal phase, and the magnetization rotation element according to claim 2.

13. The wiring layer includes a first layer containing the quasicrystal and a second layer. The second layer is located at a position different from that of the first layer in the thickness direction of the wiring layer. The second layer contains a crystal, and the magnetization rotation element according to claim 1.

14. The wiring layer includes a first layer containing at least one of five-fold, eight-fold, ten-fold, and twelve-fold rotational symmetries and a second layer. The second layer is located at a position different from that of the first layer in the thickness direction of the wiring layer. The second layer contains a crystal, and the magnetization rotation element according to claim 2.

15. The wiring layer includes a first layer containing the quasicrystal and a third layer. The third layer is located at a position different from that of the first layer in the thickness direction of the wiring layer. The third layer contains an amorphous material, and the magnetization rotation element according to claim 1.

16. The wiring layer includes a first layer containing at least one of five-fold, eight-fold, ten-fold, and twelve-fold rotational symmetries and a third layer. The third layer is located at a position different from that of the first layer in the thickness direction of the wiring layer. The third layer contains an amorphous material, and the magnetization rotation element according to claim 2.

17. The wiring layer further includes a third layer. The third layer is located at a position different from that of the first layer and the second layer in the thickness direction of the wiring layer. The third layer contains an amorphous material, and the magnetization rotation element according to claim 13.

18. The wiring layer further includes a third layer. The third layer is located at a position different from that of the first layer and the second layer in the thickness direction of the wiring layer. The third layer contains an amorphous material, and the magnetization rotation element according to claim 14.

19. The wiring layer includes a first region containing the quasicrystal and a second region containing a crystal. The first region and the second region are located at different positions in the same layer, and the magnetization rotation element according to claim 1.

20. The wiring layer includes a first region containing at least one of five-fold, eight-fold, ten-fold, and twelve-fold rotational symmetries and a second region containing a crystal. The first region and the second region are located at different positions in the same layer, and the magnetization rotation element according to claim 2.

21. The wiring layer includes a first region containing the quasicrystal and a third region containing amorphous, and the first region and the third region are at different positions within the same layer. The magnetization rotation element according to claim 1.

22. The wiring layer includes a first region containing at least one of rotational symmetries of 5-fold, 8-fold, 10-fold, and 12-fold and a third region containing amorphous, and the first region and the third region are at different positions within the same layer. The magnetization rotation element according to claim 2.

23. The wiring layer further includes a third region containing amorphous, and the first region, the second region, and the third region are at different positions within the same layer. The magnetization rotation element according to claim 19.

24. The wiring layer further includes a third region containing amorphous, and the first region, the second region, and the third region are at different positions within the same layer. The magnetization rotation element according to claim 20.

25. A magnetoresistive effect element including the magnetization rotation element according to claim 1, a second ferromagnetic layer, and a nonmagnetic layer, wherein the first ferromagnetic layer of the magnetization rotation element and the second ferromagnetic layer sandwich the nonmagnetic layer.

26. A magnetoresistive effect element including the magnetization rotation element according to claim 2, a second ferromagnetic layer, and a nonmagnetic layer, wherein the first ferromagnetic layer of the magnetization rotation element and the second ferromagnetic layer sandwich the nonmagnetic layer.

27. A magnetic memory including a plurality of magnetoresistive effect elements according to claim 25.

28. A magnetic memory including a plurality of magnetoresistive effect elements according to claim 26.

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