Power module and electronic apparatus

Abstract

Disclosed in the present application are a power module and an electronic apparatus. The power module comprises: a plastic package body; a plurality of power chips; a frame; and a plurality of driving chips, wherein a high-voltage driving chip is integrated with a bootstrap boost module, a bootstrap pad is reserved on each of a first high-side driving floating power supply voltage pin, a second high-side driving floating power supply voltage pin and a third high-side driving floating power supply voltage pin, at least some high-side driving chip power supply voltage pins are arranged at intervals in a first direction between a high-voltage driving pad and the plurality of high-side driving floating power supply voltage pins, and in a plane perpendicular to the thickness direction of the plastic package body, the length of the orthographic projection of a control-side lead frame in the first direction is L1, L1 satisfying: 5.4 mm≤L1≤ 7 mm. Thus, on the premise of ensuring the universality of the power module for external bootstrap chips, not only can the heat dissipation performance of the power module be improved, but also the through-current capability of the power module can be improved.

Description

Power modules and electronics

[0001] This application refers to the Chinese patent application with application number 2024101620471 (named “Power module and electronic device”) filed on February 4, 2024, the Chinese patent application with application number 202410160501X (named “Power module and electronic device”), and the Chinese patent application with application number 202410160504.3 (named “Power module and electronic device”), the contents of which are incorporated into this application in their entirety by reference. Technical Field

[0002] The present application relates to the technical field of electronic equipment, and in particular to a power module and electronic equipment. Background Art

[0003] In related technologies, the bootstrap boost chip of the power module is usually set independently, which requires a larger width of the power module. The heat dissipation performance of the power module is limited, thereby reducing the reliability of the power module. Under the same plastic package, the current flow capacity of the power module is also reduced.

[0004] Moreover, the structural design of the control-side lead frame is not reasonable enough. Under the same plastic package, not only the heat dissipation performance and current flow capacity of the power module are limited, thus reducing the reliability of the power module, but also the stability of the power module is low. Technical issues

[0005] The power module's heat dissipation performance is limited, reducing its reliability. Under the same plastic package, this also reduces its current flow capacity. The control-side lead frame's structural design is not rational. Under the same plastic package, not only are the heat dissipation and current flow capacity of the power module limited, reducing its reliability, but the stability of the power module is also low. Technical Solutions

[0006] This application aims to solve at least one of the technical problems existing in the prior art.

[0007] Therefore, one object of the present application is to provide a power module having better heat dissipation performance and current flow capacity.

[0008] Embodiment 1 of the present application provides a power module, comprising: a plastic package, wherein opposite sides of the plastic package in a first direction are respectively a control side and a power side; a plurality of power chips, wherein the plurality of power chips are arranged in the plastic package, and the plurality of power chips include a low-voltage power chip and a high-voltage power chip; a frame, wherein the frame includes a control-side lead frame and a power-side lead frame, wherein the control-side lead frame has a low-voltage drive pad, a high-voltage drive pad, and a plurality of control-side pins, wherein the low-voltage drive pad is one, the high-voltage drive pad is one, and the power-side lead frame has a plurality of power-side pins, wherein the high-voltage drive pad and the low-voltage drive pad are spaced apart in a second direction; A driver chip, the multiple driver chips include a low-voltage driver chip and a high-voltage driver chip, the low-voltage driver chip is one, the high-voltage driver chip is one, the low-voltage driver chip is arranged on the low-voltage driver pad, the high-voltage driver chip is arranged on the high-voltage driver pad, the high-voltage driver chip is integrated with a bootstrap boost module, the low-voltage driver chip is electrically connected to the low-voltage power chip, the high-voltage driver chip is electrically connected to the high-voltage power chip, a plurality of the control side pins are respectively electrically connected to the low-voltage driver chip and the high-voltage driver chip and extend from the control side to the plastic package, a plurality of the power side pins are respectively connected to the low-voltage power chip and the high-voltage power chip The plastic package is electrically connected and extends from the power side; wherein the plurality of control side pins include a high-side drive floating power supply voltage pin and a high-side drive floating power supply ground pin, the high-side drive floating power supply voltage pin and the high-side drive floating power supply ground pin are both spaced apart from the high-voltage driver chip in the first direction, the high-side drive floating power supply voltage pin includes a first high-side drive floating power supply voltage pin, a second high-side drive floating power supply voltage pin and a third high-side drive floating power supply voltage pin, the high-side drive floating power supply ground pin includes a first high-side drive floating power supply ground pin, a second high-side drive floating power supply ground pin and a third high-side drive floating power supply ground pin, the first high-side The driving suspension power supply voltage pin, the first high-side driving suspension power supply ground pin, the second high-side driving suspension power supply voltage pin, the second high-side driving suspension power supply ground pin, the third high-side driving suspension power supply voltage pin and the third high-side driving suspension power supply ground pin are sequentially spaced apart on a side away from the low-voltage driving pad in the second direction, and the first high-side driving suspension power supply voltage pin, the second high-side driving suspension power supply voltage pin, the third high-side driving suspension power supply voltage pin, the first high-side driving suspension power supply ground pin, the second high-side driving suspension power supply ground pin and the third high-side driving suspension power supply ground pin are electrically connected to the high-voltage driving chip respectively;Bootstrap pads are reserved on the first high-side driver floating supply voltage pin, the second high-side driver floating supply voltage pin, and the third high-side driver floating supply voltage pin. The plurality of control-side pins also include a high-side driver chip supply voltage pin. The high-side driver chip supply voltage pin is spaced apart from the high-voltage driver pad and extends along the periphery of the high-voltage driver pad. The high-side driver chip supply voltage pin is electrically connected to the high-voltage driver chip. At least a portion of the high-side driver chip supply voltage pin is spaced apart in a first direction between the high-voltage driver pad and the plurality of high-side driver floating supply voltage pins. In a plane perpendicular to the thickness direction of the plastic package, the length of the orthographic projection of the control-side lead frame in the first direction is L1, where L1 satisfies the following: 5.4 mm ≤ L1 ≤ 7 mm. The thickness direction of the plastic package is assumed to be the third direction, and the first, second, and third directions are mutually perpendicular.

[0009] Therefore, by integrating a bootstrap boost module on the high-voltage driver chip, bootstrap pads are reserved on the first high-side driver floating supply voltage pin, the second high-side driver floating supply voltage pin, and the third high-side driver floating supply voltage pin, so that at least part of the high-side driver chip supply voltage pin is spaced between the high-voltage driver pad and the multiple high-side driver floating supply voltage pins in the first direction, and in a plane perpendicular to the thickness direction of the plastic package body, the length L1 of the orthographic projection of the control-side lead frame in the first direction satisfies the following: 5.4mm≤L1≤7mm. In this way, while ensuring the versatility of the power module to the external bootstrap chip, not only the heat dissipation performance of the power module can be improved, but also the current carrying capacity of the power module can be improved.

[0010] In some examples of the present application, in a plane perpendicular to the thickness direction of the plastic package, the distances between the edges of the first high-side drive floating supply voltage pin, the second high-side drive floating supply voltage pin, and the third high-side drive floating supply voltage pin facing away from the control side and the orthographic projections of the edge of the control side of the plastic package are all equal and are all L2, and L2 satisfies the relationship: 2.4mm≤L2≤3.4mm.

[0011] In some examples of the present application, in a plane perpendicular to the thickness direction of the plastic package body, the distance between the edge of the high-voltage drive pad adjacent to the control side and the positive projection of the edge of the high-voltage drive pad facing away from the control side is L3, and L3 satisfies the relationship: L3≤2.3mm.

[0012] In some examples of the present application, the power module also includes: a substrate, at least a portion of the substrate is encapsulated in the plastic package, power pads are arranged on the substrate, the power pads include low-voltage power pads and high-voltage power pads, there are three low-voltage power pads, the three low-voltage power pads correspond to the low-voltage drive pads in the first direction, there is one high-voltage power pad and corresponds to the high-voltage drive pad in the first direction, the three low-voltage power pads and one high-voltage power pad are arranged in sequence in the second direction, there are three low-voltage power chips, there are three high-voltage power chips, the three low-voltage power chips are respectively arranged on the three low-voltage power pads, and the three high-voltage power chips are arranged on one high-voltage power pad.

[0013] In some examples of the present application, at least one core-pulling pinhole is formed on one side surface of the plastic package body in the thickness direction, and the power pad has two end corners on the side adjacent to the control side, and the two end corners are spaced apart in the second direction. In a plane perpendicular to the thickness direction of the plastic package body, the orthographic projections of the vertices of the two end corners coincide with the orthographic projections of the centers of the two core-pulling pinholes respectively; the three low-voltage power pads are respectively a first low-voltage power pad, a second low-voltage power pad and a third low-voltage power pad, and the third low-voltage power pad is arranged adjacent to the high-voltage power pad in the second direction, and the first low-voltage power pad is spaced apart in the second direction on the side of the third low-voltage power pad away from the high-voltage power pad, and the second low-voltage power pad is spaced apart between the first low-voltage power pad and the Between the third low-voltage power pads, the size of the first low-voltage power pad in the second direction is larger than the size of the second low-voltage power pad and the third low-voltage power pad in the second direction. Among the three high-voltage power chips, the one farthest away from the third low-voltage power pad is the first high-voltage power chip. In a plane perpendicular to the thickness direction of the plastic package body, the orthographic projection of the low-voltage power chip on the first low-voltage power pad and the orthographic projection of the core-pulling pinhole are spaced apart from each other, and the orthographic projection of the first high-voltage power chip and the orthographic projection of the core-pulling pinhole are spaced apart from each other. The distances between the edges of the multiple power chips adjacent to the control side and the orthographic projections of the edges of the power pads adjacent to the control side are equal and are L4, and L4 satisfies the relationship: 0.7mm≤L4≤0.9mm.

[0014] In some examples of the present application, in a plane perpendicular to the thickness direction of the plastic package body, the distance between the edge of the first low-voltage power pad in the second direction away from the side of the second low-voltage power pad and the positive projection of the edge of the low-voltage power chip on the first low-voltage power pad in the second direction away from the side of the second low-voltage power pad is L5, and L5 satisfies the relationship: 0.8mm≤L5≤1.2mm.

[0015] In some examples of the present application, in a plane perpendicular to the thickness direction of the plastic package, the distance between the edge of the high-voltage power pad in the second direction away from the side of the third low-voltage power pad and the orthographic projection of the edge of the first high-voltage power chip in the second direction away from the side of the third low-voltage power pad is L6, and L6 satisfies the relationship: 0.8mm≤L6≤1.2mm.

[0016] In some examples of the present application, the dimension of the plastic package body in the first direction is L7, and L7 satisfies the relationship: 18 mm ≤ L7 ≤ 20 mm.

[0017] Another object of the present application is to provide another power module having better heat dissipation performance and current flow capacity.

[0018] A second embodiment of the present application proposes a power module, comprising: a plastic package, wherein opposite sides of the plastic package in a first direction are respectively a control side and a power side; a plurality of power chips, wherein the plurality of power chips are arranged in the plastic package, and the plurality of power chips include a low-voltage power chip and a high-voltage power chip; a frame, wherein the frame includes a control-side lead frame and a power-side lead frame, wherein the control-side lead frame has a low-voltage drive pad, a high-voltage drive pad and a plurality of control-side pins, wherein the low-voltage drive pad is one, the high-voltage drive pad is one, and the power-side lead frame has a plurality of power-side pins, wherein the high-voltage drive pad and the low-voltage drive pad are spaced apart in a second direction; A driver chip, the multiple driver chips include a low-voltage driver chip and a high-voltage driver chip, the low-voltage driver chip is one, the high-voltage driver chip is one, the low-voltage driver chip is arranged on the low-voltage driver pad, the high-voltage driver chip is arranged on the high-voltage driver pad, the high-voltage driver chip is integrated with a bootstrap boost module, the low-voltage driver chip is electrically connected to the low-voltage power chip, the high-voltage driver chip is electrically connected to the high-voltage power chip, a plurality of the control side pins are respectively electrically connected to the low-voltage driver chip and the high-voltage driver chip and extend from the control side to the plastic package, a plurality of the power side pins are respectively connected to the low-voltage power chip and the high-voltage power chip The plastic package is electrically connected and extends from the power side; wherein the plurality of control side pins include a high-side drive floating power supply voltage pin and a high-side drive floating power supply ground pin, the high-side drive floating power supply voltage pin and the high-side drive floating power supply ground pin are both spaced apart from the high-voltage driver chip in the first direction, the high-side drive floating power supply voltage pin includes a first high-side drive floating power supply voltage pin, a second high-side drive floating power supply voltage pin and a third high-side drive floating power supply voltage pin, the high-side drive floating power supply ground pin includes a first high-side drive floating power supply ground pin, a second high-side drive floating power supply ground pin and a third high-side drive floating power supply ground pin, the first high-side The driving suspension power supply voltage pin, the first high-side driving suspension power supply ground pin, the second high-side driving suspension power supply voltage pin, the second high-side driving suspension power supply ground pin, the third high-side driving suspension power supply voltage pin and the third high-side driving suspension power supply ground pin are sequentially spaced apart on a side away from the low-voltage driving pad in the second direction, and the first high-side driving suspension power supply voltage pin, the second high-side driving suspension power supply voltage pin, the third high-side driving suspension power supply voltage pin, the first high-side driving suspension power supply ground pin, the second high-side driving suspension power supply ground pin and the third high-side driving suspension power supply ground pin are electrically connected to the high-voltage driving chip respectively;No bootstrap pads are reserved on the first, second, and third high-side driver floating supply voltage pins. The plurality of control-side pins further include a high-side driver chip supply voltage pin, which is spaced between the high-voltage driver pad and the low-voltage driver pad in the second direction. The high-side driver chip supply voltage pin is electrically connected to the high-voltage driver chip. In a plane perpendicular to the thickness direction of the plastic package, the orthographic projection of the control-side lead frame in the first direction has a length L1, where L1 satisfies the following conditions: 3.7 mm ≤ L1 ≤ 5.3 mm. The thickness direction of the plastic package is defined as the third direction, and the first, second, and third directions are mutually perpendicular.

[0019] Therefore, by integrating a bootstrap boost module on the high-voltage driver chip, no bootstrap pads are reserved on the first high-side driver floating supply voltage pin, the second high-side driver floating supply voltage pin and the third high-side driver floating supply voltage pin, so that the high-side driver chip supply voltage pin is arranged between the high-voltage driver pad and the low-voltage driver pad in the second direction, and in a plane perpendicular to the thickness direction of the plastic package body, the length L1 of the orthographic projection of the control-side lead frame in the first direction satisfies: 3.7mm≤L1≤5.3mm, which not only improves the heat dissipation performance of the power module, but also improves the current carrying capacity of the power chip.

[0020] In some examples of the present application, in a plane perpendicular to the thickness direction of the plastic package body, the distance between the edge of the high-voltage drive pad adjacent to the control side and the positive projection of the edge of the high-voltage drive pad facing away from the control side is L8, and L8 satisfies the relationship: 2.3mm≤L8≤3.1mm.

[0021] In some examples of the present application, the power module further includes: a substrate, at least a portion of which is encapsulated in the plastic package, the power chip is arranged on the substrate, and in a plane perpendicular to the thickness direction of the plastic package, the length of the orthographic projection of the substrate in the first direction is L9, and L9 satisfies the relationship: 9.5mm≤L9≤10.5mm.

[0022] In some examples of the present application, power pads are provided on the substrate, and the power pads include low-voltage power pads and high-voltage power pads. There are three low-voltage power pads and one high-voltage power pad. The three low-voltage power pads and one high-voltage drive pad are arranged in sequence in the second direction. The multiple power chips include three low-voltage power chips and three high-voltage power chips. The three low-voltage power chips are respectively arranged on the three low-voltage power pads and are electrically connected to the low-voltage drive chip. The three high-voltage power chips are all arranged on one high-voltage power pad and are electrically connected to the high-voltage drive chip.

[0023] In some examples of the present application, the dimension of the plastic package body in the first direction is L7, and L7 satisfies the relationship: 18 mm ≤ L7 ≤ 20 mm.

[0024] One objective of the present application is to provide another power module with better stability.

[0025] Embodiment 3 of the present application provides a power module, comprising: a plastic package, wherein the two opposite sides of the plastic package in a first direction are respectively a control side and a power side; a plurality of power chips, wherein the plurality of power chips are arranged in the plastic package, and the plurality of power chips include a low-voltage power chip and a high-voltage power chip; a frame, wherein the frame includes a control-side lead frame and a power-side lead frame, wherein the control-side lead frame has a low-voltage driving pad, a high-voltage driving pad and a plurality of control-side pins, and the power-side lead frame has a plurality of power-side pins, wherein the high-voltage driving pad and the low-voltage driving pad are spaced apart in a second direction; a plurality of driver chips, wherein the plurality of driver chips include a low-voltage driving pad and a high-voltage driving pad. The chip includes a low-voltage driver chip and a high-voltage driver chip, the low-voltage driver chip is arranged on the low-voltage driver pad, the high-voltage driver chip is arranged on the high-voltage driver pad, the high-voltage driver chip is integrated with a bootstrap boost module, the low-voltage driver chip is electrically connected to the low-voltage power chip, the high-voltage driver chip is electrically connected to the high-voltage power chip, a plurality of control-side pins are electrically connected to the low-voltage driver chip and the high-voltage driver chip respectively and extend from the control side to the plastic package, a plurality of power-side pins are electrically connected to the low-voltage power chip and the high-voltage power chip respectively and extend from the power side to the plastic package; wherein, a plurality of The control side pin includes a high-side drive floating power supply voltage pin and a high-side drive floating power supply ground pin, and the high-side drive floating power supply voltage pin and the high-side drive floating power supply ground pin are both spaced apart from the high-voltage driver chip in the first direction, and the high-side drive floating power supply voltage pin includes a first high-side drive floating power supply voltage pin, a second high-side drive floating power supply voltage pin and a third high-side drive floating power supply voltage pin, and the high-side drive floating power supply ground pin includes a first high-side drive floating power supply ground pin, a second high-side drive floating power supply ground pin and a third high-side drive floating power supply ground pin, the first high-side drive floating power supply voltage pin, the The first high-side drive floating power supply ground pin, the second high-side drive floating power supply voltage pin, the second high-side drive floating power supply ground pin, the third high-side drive floating power supply voltage pin and the third high-side drive floating power supply ground pin are sequentially spaced apart on a side away from the low-voltage drive pad in the second direction, and the first high-side drive floating power supply voltage pin, the second high-side drive floating power supply voltage pin, the third high-side drive floating power supply voltage pin, the first high-side drive floating power supply ground pin, the second high-side drive floating power supply ground pin and the third high-side drive floating power supply ground pin are electrically connected to the high-voltage driver chip respectively;The plurality of control-side pins further include a high-side driver chip power supply voltage pin and a first support pin. The high-side driver chip power supply voltage pin is spaced apart between the high-voltage driver pad and the low-voltage driver pad in the second direction and is electrically connected to the high-voltage driver chip. The plastic package body is provided on either side of a first long side and a second long side in the first direction, the control side is located on the first long side, and the power side is located on the second long side. The plastic package body is provided on either side of a first short side and a second short side in the second direction, and the first short side is closer to the high-voltage driver pad than the second short side. The third high-side driver floating power supply ground pin is led outward from the first long side. The first support pin is located on a side of the third high-side driver floating power supply ground pin in the second direction away from the third high-side driver floating power supply voltage pin and is exposed outward from the first short side. The first support pin is connected to the third high-side driver floating power supply ground pin. The first and second directions are perpendicular to each other.

[0026] Therefore, by integrating a bootstrap boost module into the high-voltage driver chip, the control side pins also include a high-side driver chip power supply voltage pin and a first support pin. The high-side driver chip power supply voltage pin is arranged between the high-voltage driver pad and the low-voltage driver pad in the second direction and is electrically connected to the high-voltage driver chip. The third high-side driver floating power supply ground pin is led outward from the first long side. The first support pin is located on the side of the third high-side driver floating power supply ground pin that is away from the third high-side driver floating power supply voltage pin in the second direction and is exposed outward from the first short side. The first support pin is connected to the third high-side driver floating power supply ground pin. In this way, while improving the heat dissipation performance and current flow capacity of the power module, the structural design of the control side lead frame can be optimized, and the first support pin and the third high-side driver floating power supply ground pin can be formed into a whole to support from two directions, thereby avoiding shaking of the first support pin and the third high-side driver floating power supply ground pin when supported in a single direction, and improving the reliability of the power module.

[0027] In some examples of the present application, the third high-side drive floating power supply ground pin includes a first pin portion and a second pin portion, the second pin portion is arranged on the side of the first pin portion facing the third high-side drive floating power supply voltage pin, the second pin portion is electrically connected to the high-voltage driver chip, the first support pin is connected to the side of the first pin portion away from the second pin portion, the first support pin and the second pin portion are spaced apart in the second direction, and compared with the second pin portion, the first support pin is adjacent to the first long side.

[0028] In some examples of the present application, a second support pin is provided on the side of the high-voltage drive pad in the second direction away from the low-voltage drive pad, and the second support pin includes a first support pin portion and a second support pin portion, the first support pin portion is connected to the high-voltage drive pad, the second support pin portion is connected to the side of the first support pin portion away from the high-voltage drive pad and is exposed outward from the first short side, and the second support pin portion and the first support pin are spaced apart in the first direction.

[0029] In some examples of the present application, in a plane perpendicular to the thickness direction of the plastic package body, the distance between the edge of the high-voltage drive pad adjacent to the control side and the positive projection of the edge of the high-voltage drive pad facing away from the control side is L8, and L8 satisfies the relationship: 2.3mm≤L8≤3.1mm.

[0030] In some examples of the present application, the power module further includes: a substrate, at least a portion of which is encapsulated in the plastic package, the power chip being arranged on the substrate, and in a plane perpendicular to the thickness direction of the plastic package, the length of the orthographic projection of the substrate in the first direction is L9, and L9 satisfies the relationship: 9.5≤L9≤10.5mm.

[0031] In some examples of the present application, the dimension of the plastic package body in the first direction is L7, and L7 satisfies the relationship: 18 mm ≤ L7 ≤ 20 mm.

[0032] In some examples of the present application, at least one of the low-voltage power chip and the high-voltage power chip is a reverse-conducting insulated gate bipolar transistor; and / or at least one of the low-voltage power chip and the high-voltage power chip is a metal-oxide semiconductor field-effect transistor; and / or the low-voltage power chip is an insulated gate bipolar transistor and a fast recovery diode electrically connected to each other; and / or the high-voltage power chip is an insulated gate bipolar transistor and a fast recovery diode electrically connected to each other.

[0033] In some examples of the present application, the power module further includes: a substrate, at least a portion of which is encapsulated in the plastic package, a power pad being provided on the substrate, the low-voltage power chip and the high-voltage power chip being provided on the power pad, and the power pad being electrically connected to the power side pin.

[0034] In some examples of the present application, the substrate, the control-side lead frame, and the power-side lead frame are constructed as an integral frame, and the substrate is encapsulated in the plastic package.

[0035] In some examples of the present application, the power module further includes: an insulating sheet, which is arranged on the side of the substrate facing away from the low-voltage power chip and the high-voltage power chip; and a heat sink, which is arranged on the side of the insulating sheet facing away from the substrate and exposed from the plastic package.

[0036] In some examples of the present application, the control side lead frame and the power side lead frame are constructed of an integral frame, and the power side lead frame is connected to the substrate; the substrate includes a conductive layer, an insulating layer and a heat dissipation layer, and the conductive layer and the heat dissipation layer are respectively arranged on both side surfaces of the insulating layer, the conductive layer constructs the power pad, and the heat dissipation layer is exposed from the plastic package on the side away from the insulating layer.

[0037] In some examples of the present application, the control side lead frame and the power side lead frame are constructed of an integral frame, and the power side lead frame is connected to the substrate; the substrate includes a conductive layer and an insulating layer, the conductive layer is arranged on one side surface of the insulating layer, the conductive layer constructs the power pad, and the side of the insulating layer away from the conductive layer is exposed from the plastic package.

[0038] An electronic device according to an embodiment of the present application includes: the power module described in any one of the above embodiments.

[0039] Additional aspects and advantages of the present application will be given in part in the description below, and in part will become obvious from the description below, or will be learned through practice of the present application. Beneficial effects

[0040] The power module has better heat dissipation performance, current flow capacity and stability. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] The above and / or additional aspects and advantages of the present application will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0042] FIG1 is a schematic diagram of a power module according to a first embodiment of the present application;

[0043] FIG2 is a partial schematic diagram of a power module according to the first embodiment of the present application;

[0044] FIG3 is a second partial schematic diagram of a power module according to the first embodiment of the present application;

[0045] FIG4 is a partial schematic diagram 1 of a power module according to the second embodiment of the present application;

[0046] FIG5 is a second partial schematic diagram of a power module according to the second embodiment of the present application;

[0047] FIG6 is a partial schematic diagram 1 of a power module according to the third embodiment of the present application;

[0048] FIG7 is a schematic diagram of area A in FIG6 ;

[0049] FIG8 is a second partial schematic diagram of a power module according to the third embodiment of the present application;

[0050] FIG9 is a first cross-sectional view of a power module according to an embodiment of the present application;

[0051] FIG10 is a second cross-sectional view of a power module according to an embodiment of the present application;

[0052] FIG11 is a third cross-sectional view of a power module according to an embodiment of the present application;

[0053] FIG12 is a fourth cross-sectional view of a power module according to an embodiment of the present application.

[0054] Figure numerals: 100, power module; 1, plastic package; 11, control side; 12, power side; 17, core pulling pin hole; 13, first long side; 14, second long side; 15, first short side; 16, second short side; 2, power chip; 21, low-voltage power chip; 211, first low-voltage power chip; 22, high-voltage power chip; 221, first high-voltage power chip; 3, frame; 31, control side lead frame; 311, low-voltage driving pad; 312, high-voltage driving pad; 3121, second supporting pin; 31211, first supporting pin portion; 31212, second supporting pin portion; 313, control side pin; 3131, high-side driving floating power supply voltage pin; 31311, first high-side driving floating power supply voltage pin; 31312, second high-side driving floating power supply voltage pin; 31313, third high-side driving floating power supply voltage pin 31314, bootstrap pad; 3132, high-side driver chip power supply voltage pin; 3133, high-side driver floating power supply ground pin; 31331, first high-side driver floating power supply ground pin; 31332, second high-side driver floating power supply ground pin; 31333, third high-side driver floating power supply ground pin; 313331, first pin portion; 313332, second pin portion; 3134, first support pin; 32, power side lead frame; 321, power side pin; 4. Driver chip; 41. Low-voltage driver chip; 42. High-voltage driver chip; 5. Substrate; 51. Power pad; 511. Low-voltage power pad; 5111. First low-voltage power pad; 5112. Second low-voltage power pad; 5113. Third low-voltage power pad; 512. High-voltage power pad; 52. End angle; 53. Conductive layer; 54. Insulation layer; 55. Heat dissipation layer; 6. Insulation sheet; 7. Heat sink.

[0055] Implementation Methods of the Application

[0056] The embodiments of the present application are described in detail below. The embodiments described with reference to the accompanying drawings are exemplary. The embodiments of the present application are described in detail below.

[0057] The power module 100 according to an embodiment of the present application is described below with reference to Figures 1 to 12. The power module 100 may be an intelligent power module (IPM), but is not limited thereto.

[0058] In the first embodiment of the present application, as shown in Figures 1, 2, 3, and 9-12, the power module 100 of the present embodiment includes a plastic package 1, multiple power chips 2, a frame 3, and multiple driver chips 4. In the description of this application, "multiple" means two or more. The thickness direction of the plastic package 1 is set as the third direction, and the first direction, the second direction, and the third direction are perpendicular to each other.

[0059] Specifically, the two opposite sides of the plastic package 1 in the first direction are respectively a control side 11 and a power side 12, and a plurality of power chips 2 are arranged in the plastic package 1. The plurality of power chips 2 may include a low-voltage power chip 21 and a high-voltage power chip 22. For example, in the example of Figures 1 to 3, the upper side of the plastic package 1 is the control side 11, and the lower side of the plastic package 1 is the power side 12. The plurality of power chips 2 are located between the control side 11 and the power side 12 of the plastic package 1. The plurality of power chips 2 include a low-voltage power chip 21 located on the left side of the plastic package 1 and a high-voltage power chip 22 located on the right side of the plastic package 1. With such an arrangement, the plastic package 1 can provide physical and electrical protection for the plurality of power chips 2 to prevent the external environment from impacting the power chips 2, thereby extending the service life of the power chips 2.

[0060] In conjunction with Figures 1, 2, 3, and 9-12, the frame 3 may include a control-side lead frame 31 and a power-side lead frame 32. The control-side lead frame 31 has a low-voltage drive pad 311, a high-voltage drive pad 312, and a plurality of control-side pins 313. There is one low-voltage drive pad 311 and one high-voltage drive pad 312. The power-side lead frame 32 has a plurality of power-side pins 321. The plurality of driver chips 4 may include a low-voltage driver chip 41 and a high-voltage driver chip 42. There is one low-voltage driver chip 41 and one high-voltage driver chip 42. The low-voltage driver chip 41 may be disposed on the low-voltage driver pad 311, and the high-voltage driver chip 42 may be disposed on the high-voltage driver pad 312. A bootstrap boost module may be integrated into the high-voltage driver chip 42.

[0061] For example, in the examples of Figures 1 to 3, the portion of the frame 3 located on the upper side of the plastic package 1 is the control-side lead frame 31, the portion of the frame 3 located on the lower side of the plastic package 1 is the power-side lead frame 32, the low-voltage drive pad 311 is located to the left of the high-voltage drive pad 312, and the low-voltage drive pad 311 is adjacent to the low-voltage power chip 21, the high-voltage drive pad 312 is adjacent to the high-voltage power chip 22, and the bootstrap boost module is integrated into the high-voltage driver chip 42. Therefore, compared with the independent arrangement of the bootstrap boost chip in the prior art, since the bootstrap boost module is integrated into the high-voltage driver chip 42, the number of chips in the power module 100 can be reduced, and it is unnecessary to set an electrical connection wire for electrical connection between the bootstrap boost module and the control-side pin 313, which can reduce the number of electrical connection wires, thereby reducing the risk of failure, improving product reliability, and improving packaging efficiency.

[0062] In addition, the power module in the prior art mainly includes four circuits, namely, a bootstrap boost module circuit, a high-voltage drive circuit, a low-voltage drive circuit and a power device (such as a power chip) circuit. In this application, the bootstrap boost module is integrated into the high-voltage drive chip 42. At this time, the power module 100 includes three circuits, namely, a high-voltage drive circuit, a low-voltage drive circuit and a power device (such as a power chip 2) circuit, and the connection between each circuit is relatively simpler.

[0063] In addition, when the power module 100 includes three bootstrap boost modules, the number of chips in the power module 100 is reduced by three by integrating the bootstrap boost modules into the high-voltage driver chip 42, and the use of electrical connection wires for connecting the bootstrap boost modules is correspondingly eliminated. The number of chips on the power module 100 is reduced by approximately 17%, and the number of electrical connection wires is reduced by approximately 7%, thereby simplifying the packaging process of the power module 100.

[0064] As shown in Figures 2, 3 and 9-12, the low-voltage driver chip 41 is electrically connected to the low-voltage power chip 21, the high-voltage driver chip 42 is electrically connected to the high-voltage power chip 22, a plurality of control-side pins 313 are electrically connected to the low-voltage driver chip 41 and the high-voltage driver chip 42 respectively and extend out of the plastic package 1 from the control side 11, and a plurality of power-side pins 321 are electrically connected to the low-voltage power chip 21 and the high-voltage power chip 22 respectively and extend out of the plastic package 1 from the power side 12.

[0065] For example, in the examples of Figures 2 and 3, along the first direction, a portion of the multiple control-side pins 313 are electrically connected to the low-voltage driver chip 41, the low-voltage driver chip 41 is electrically connected to the low-voltage power chip 21, and the low-voltage power chip 21 can be electrically connected to a portion of the power-side pins 321 on the lower side of the plastic package 1. When the power module 100 is operating, the multiple control-side pins 313 and the multiple power-side pins 321 can be connected to an external controller, thereby achieving electrical connection between the internal circuit of the power module 100 and the external circuit, forming an electrical loop, which is conducive to the normal use of the power module 100. In addition, the multiple control-side pins 313 can be disassembled and assembled simultaneously, which can reduce the difficulty of disassembling and assembling the power module 100.

[0066] The low-voltage driver chip 41 and the low-voltage power chip 21 can be electrically connected via electrical connection wires, and the high-voltage driver chip 42 and the high-voltage power chip 22 can be electrically connected via electrical connection wires. Furthermore, the low-voltage driver chip 41 and the control-side pin 313 can be electrically connected via electrical connection wires, and the high-voltage driver chip 42 and the control-side pin 313 can be electrically connected via electrical connection wires. Furthermore, the low-voltage power chip 21 and the power-side pin 321 can be electrically connected via electrical connection wires, and the high-voltage power chip 22 and the power-side pin 321 can be electrically connected via electrical connection wires.

[0067] Furthermore, the plurality of control side pins 313 may include a high side drive suspension power supply voltage pin 3131 and a high side drive suspension power supply ground pin 3133, the high side drive suspension power supply voltage pin 3131 may be used to connect the high side drive suspension power supply voltage, the high side drive suspension power supply ground pin 3133 may be used to connect the high side drive suspension power supply ground voltage, by making the high side drive suspension power supply voltage pin 3131 and the high side drive suspension power supply ground pin 3133 spaced apart from the high voltage driver chip 42 in the first direction, the high side drive suspension power supply voltage pin 3131 may include a first high side drive suspension power supply voltage pin 31311, a second high side drive suspension power supply voltage pin 31312 and a first high side drive suspension power supply ground pin 3133. The three high-side drive floating power supply voltage pins 31313, the first high-side drive floating power supply voltage pin 31311, the second high-side drive floating power supply voltage pin 31312 and the third high-side drive floating power supply voltage pin 31313 correspond to the W phase, V phase and U phase respectively, and the high-side drive floating power supply ground pin 3133 may include the first high-side drive floating power supply ground pin 31331, the second high-side drive floating power supply ground pin 31332 and the third high-side drive floating power supply ground pin 31333, the first high-side drive floating power supply ground pin 31331, the second high-side drive floating power supply ground pin 31332 and the third high-side drive floating power supply ground pin 31333 correspond to the W phase, V phase and U phase respectively.

[0068] In addition, the first high-side drive floating power supply voltage pin 31311, the first high-side drive floating power supply ground pin 31331, the second high-side drive floating power supply voltage pin 31312, the second high-side drive floating power supply ground pin 31332, the third high-side drive floating power supply voltage pin 31313 and the third high-side drive floating power supply ground pin 31333 are arranged in sequence on the side away from the low-voltage drive pad 311 in the second direction, so that the first high-side drive floating power supply voltage pin 31311, the second high-side drive floating power supply voltage pin 31312, the third high-side drive floating power supply voltage pin 31313, the first high-side drive floating power supply ground pin 31331, the second high-side drive floating power supply ground pin 31332 and the third high-side drive floating power supply ground pin 31333 are respectively electrically connected to the high-voltage driver chip 42, thereby ensuring the normal operation of the intelligent power module 100.

[0069] Furthermore, since a bootstrap boost module has been integrated in the high-voltage driver chip 42, bootstrap pads 31314 are reserved on the first high-side driver floating power supply voltage pin 31311, the second high-side driver floating power supply voltage pin 31312, and the third high-side driver floating power supply voltage pin 31313. This allows space to be reserved for the bootstrap chip, thereby enabling the frame 3 to be used for external bootstrap chips.

[0070] In addition, the multiple control side pins 313 can also include a high-side driver chip power supply voltage pin 3132, and the high-voltage driver chip 42 is electrically connected to the high-side driver chip power supply voltage pin 3132. The high-side driver chip power supply voltage pin 3132 can be used to connect the high-voltage driver chip 42 to provide a power supply voltage, thereby ensuring the normal operation of the high-voltage driver chip 42. Not only can the high-voltage driver chip 42 realize the bootstrap function when working normally, but it can also ensure that the upper bridge IGBT (Insulated Gate Bipolar Transistor) of the power module 100 can be turned on normally.

[0071] By spacing the high-side driver chip supply voltage pin 3132 and the high-voltage driver pad 312 apart and extending along the periphery of the high-voltage driver pad 312, the high-side driver chip supply voltage pin 3132 is electrically connected to the high-voltage driver chip 42. At least a portion of the high-side driver chip supply voltage pin 3132 is spaced in the first direction between the high-voltage driver pad 312 and the plurality of high-side driver floating supply voltage pins 3131. In this way, the high-side driver chip supply voltage pin 3132 can be extended from between the high-voltage driver pad and the high-side driver floating supply voltage pin 3131 toward the edge, while improving the compactness of the arrangement between the high-side driver chip supply voltage pin 3132 and the high-voltage driver pad 312. This not only facilitates the connection of the high-side driver chip supply voltage pin 3132 to the high-side driver chip supply voltage, ensuring normal operation of the power module 100, but also supports both ends of the high-side driver chip supply voltage pin 3132 from two directions, thereby preventing shaking caused by unilateral support.

[0072] In addition, in some other embodiments of the first embodiment of the present application, when the power module 100 adopts a design in which the bootstrap chip is external, that is, no bootstrap boost module is provided in the high-voltage driver chip 42, and three bootstrap chips are provided separately, and the three bootstrap chips are respectively provided on the bootstrap pad 31314 on the first high-side driver floating power supply voltage pin 31311, the bootstrap pad 31314 on the second high-side driver floating power supply voltage pin 31312, and the bootstrap pad 31314 on the third high-side driver floating power supply voltage pin 31313, by supplying power to the high-side driver chip The voltage pin 3132 is spaced apart from the high-voltage drive pad 312 and extends along the periphery of the high-voltage drive pad 312. In this way, the high-side drive chip power supply voltage pin 3132 can be located below the first high-side drive floating power supply voltage pin 31311, the second high-side drive floating power supply voltage pin 31312 and the third high-side drive floating power supply voltage pin 31313, which can facilitate the electrical connection between the three external bootstrap chips and the high-side drive chip power supply voltage pin 3132, thereby better realizing the commonality of the control side lead frame 31.

[0073] Furthermore, in a plane perpendicular to the thickness direction of the plastic package body 1 , the length of the orthographic projection of the control-side lead frame 31 in the first direction is L1 , and L1 satisfies: 5.4 mm≤L1≤7 mm.

[0074] Specifically, in a plane perpendicular to the thickness direction of the plastic package 1, when the length of the orthographic projection of the control-side lead frame 31 in the first direction is less than 5.4 mm, the space occupied by the control-side lead frame 31 on the plastic package 1 is relatively small, which is not conducive to the normal use of the control-side lead frame 31 and the placement of the bootstrap pad 31314 on the high-side drive floating power supply voltage pin 3131. In a plane perpendicular to the thickness direction of the plastic package 1, when the length of the orthographic projection of the control-side lead frame 31 in the first direction is greater than 7 mm, the space occupied by the control-side lead frame 31 on the plastic package 1 is relatively large, which relatively reduces the size of the substrate 5. This not only reduces the contact area between the power module 100 and other heat dissipation components, affecting the heat dissipation performance of the power chip 2 and even the power module 100, but also reduces the current flow capacity of the power chip 2 and even the power module 100.

[0075] Therefore, by setting the length L1 of the control side lead frame 31 in the first direction of the orthographic projection in the plane perpendicular to the thickness direction of the plastic package body 1 to satisfy: 5.4mm≤L1≤7mm, the size of the control side lead frame 31 can be set within a reasonable range, which not only facilitates the use of the control side lead frame 31, but also can drive the setting position of the reserved bootstrap pad 31314 on the high-side floating power supply voltage pin 3131 to ensure the versatility of the frame 3 for external bootstrap chips, and can increase the size of the substrate 5, thereby facilitating heat exchange between the power chip 2 and the outside world through the substrate 5, thereby enhancing the heat dissipation performance of the power module 100, reducing the temperature rise of the power module 100, and enhancing the current flow capacity of the power chip 2 and even the power module 100, thereby improving the reliability of the power module 100.

[0076] Therefore, by integrating a bootstrap boost module into the high-voltage driver chip 42, bootstrap pads 31314 are reserved on the first high-side driver floating supply voltage pin 31311, the second high-side driver floating supply voltage pin 31312, and the third high-side driver floating supply voltage pin 31313, so that at least a portion of the high-side driver chip supply voltage pin 3132 is spaced apart in the first direction between the high-voltage driver pad 312 and the plurality of high-side driver floating supply voltage pins 3131, and in a plane perpendicular to the thickness direction of the plastic package body 1, the length L1 of the orthographic projection of the control-side lead frame 31 in the first direction satisfies the following: 5.4 mm ≤ L1 ≤ 7 mm. In this way, while ensuring the versatility of the power module 100 for external bootstrap chips, not only the heat dissipation performance of the power module 100 can be improved, but also the current carrying capacity of the power module 100 can be improved.

[0077] As shown in Figures 2 and 3, in a plane perpendicular to the thickness direction of the plastic package 1, the distances between the edges of the first high-side drive floating power supply voltage pin 31311, the second high-side drive floating power supply voltage pin 31312, and the third high-side drive floating power supply voltage pin 31313 facing away from the control side 11 and the orthographic projections of the edge of the control side 11 of the plastic package 1 are all equal and are all L2, and L2 satisfies: 2.4 mm ≤ L2 ≤ 3.4 mm.

[0078] Specifically, in a plane perpendicular to the thickness direction of the plastic package body 1, the orthographic projections of the edges of the first high-side drive floating supply voltage pin 31311, the second high-side drive floating supply voltage pin 31312 and the third high-side drive floating supply voltage pin 31313 facing away from the control side 11 are: the lower edge of the orthographic projections of the first high-side drive floating supply voltage pin 31311, the second high-side drive floating supply voltage pin 31312 and the third high-side drive floating supply voltage pin 31313, and the orthographic projection L2 of the edge of the control side 11 of the plastic package body 1 is: the upper edge of the orthographic projection of the plastic package body 1.

[0079] By making the distances between the edges of the first high-side drive floating supply voltage pin 31311, the second high-side drive floating supply voltage pin 31312 and the third high-side drive floating supply voltage pin 31313 facing away from the control side 11 and the positive projections of the edges of the control side 11 of the plastic package 1 equal, that is, making the distances between the lower edges of the projections of the three high-side drive floating supply voltage pins 3131 and the upper edges of the positive projections of the plastic package 1 the same, the size design of the control side pin 313 can be optimized.

[0080] In a plane perpendicular to the thickness direction of the plastic package body 1, when the distance between the edge of the high-side drive floating power supply voltage pin 3131 facing away from the control side 11 and the positive projection of the edge of the control side 11 of the plastic package body 1 is less than 2.4 mm, in order to ensure the electrical connection between the high-side drive floating power supply voltage pin 3131 and the external circuit, the bootstrap pad 31314 needs to be sacrificed, resulting in a smaller size of the bootstrap pad 31314, which is not conducive to the arrangement of an external bootstrap chip on the bootstrap pad 31314.

[0081] In a plane perpendicular to the thickness direction of the plastic package 1, when the distance between the edge of the high-side drive floating power supply voltage pin 3131 facing away from the control side 11 and the orthographic projection of the edge of the control side 11 of the plastic package 1 is greater than 3.4 mm, the space occupied by the high-side drive floating power supply voltage pin 3131 is relatively large, which relatively reduces the size of the substrate 5, not only reducing the contact area between the power module 100 and other heat dissipation components, affecting the heat dissipation performance of the power chip 2 and even the power module 100, but also affecting the current flow capacity of the power chip 2 and even the power module 100.

[0082] Therefore, by setting L2 to satisfy: 2.4mm≤L2≤3.4mm, the sizes of the three high-side drive floating supply voltage pins 3131, namely: the first high-side drive floating supply voltage pin 31311, the second high-side drive floating supply voltage pin 31312 and the third high-side drive floating supply voltage pin 31313, can be set within a reasonable range. Not only can the reserved bootstrap pads 31314 on the three high-side drive floating supply voltage pins 3131 be set in a position to ensure the versatility of the frame 3 for external bootstrap chips, but the size of the substrate 5 can also be increased, thereby facilitating heat exchange between the power chip 2 and the outside world through the substrate 5, enhancing the heat dissipation performance of the power module 100, reducing the temperature rise of the power module 100, and enhancing the current flow capacity of the power module 100, thereby improving the reliability of the power module 100. Among them, the value of L2 includes but is not limited to 2.4mm, 2.5mm, 2.6mm, 2.7mm, 2.8mm, 2.9mm, 3.0mm, 3.1mm, 3.2mm, 3.3mm and 3.4mm.

[0083] As shown in Figures 2 and 3, in a plane perpendicular to the thickness direction of the plastic package body 1, the distance between the edge of the high-voltage driving pad 312 adjacent to the control side 11 and the orthographic projection of the edge of the high-voltage driving pad 312 facing away from the control side 11 is L3, and L3 satisfies the relationship: L3≤2.3mm.

[0084] Specifically, in a plane perpendicular to the thickness direction of the plastic package body 1, the orthographic projection of the edge of the high-voltage driving pad 312 adjacent to the control side 11 is the upper edge of the orthographic projection of the high-voltage driving pad 312, and the orthographic projection of the edge of the high-voltage driving pad 312 facing away from the control side 11 is the lower edge of the orthographic projection of the high-voltage driving pad 312. In other words, in a plane perpendicular to the thickness direction of the plastic package body 1, the distance between the edge of the high-voltage driving pad 312 adjacent to the control side 11 and the orthographic projection of the edge of the high-voltage driving pad 312 facing away from the control side 11 is the distance L3 between the upper edge of the orthographic projection of the high-voltage driving pad 312 and the lower edge of the orthographic projection of the high-voltage driving pad 312, that is, the size of the orthographic projection of the high-voltage driving pad 312 in the first direction.

[0085] In a plane perpendicular to the thickness direction of the plastic package body 1, if the distance between the edge of the high-voltage drive pad 312 adjacent to the control side 11 and the orthographic projection of the edge of the high-voltage drive pad 312 facing away from the control side 11 is greater than 2.3 mm, that is, when the orthographic projection of the high-voltage drive pad 312 in the first direction is greater than 2.3 mm, relatively, the sum of the distance between the high-side drive floating power supply voltage pin 3131 and the high-voltage drive pad 312 and the size of the high-side drive floating power supply voltage pin 3131 will be too small, resulting in incompatibility with the setting of the bootstrap pad 31314 and a reduction in the size of the substrate 5. This not only reduces the contact area between the power module 100 and other heat dissipation components, affecting the heat dissipation performance of the power chip 2 and even the power module 100, but also affects the current flow capacity of the power chip 2 and even the power module 100.

[0086] Therefore, by setting L3 to satisfy the relationship: L3≤2.3mm, the size of the high-voltage driving pad 312 in the first direction can be made more reasonable while ensuring that the drive side lead frame 3 is not too large and does not affect the size of the substrate 5 in the first direction. This not only makes it compatible with the setting of the bootstrap pads 31314 and ensures the versatility of the frame 3 for external bootstrap chips, but also facilitates increasing the size of the substrate 5, thereby facilitating heat exchange between the power chip 2 and the outside world through the substrate 5, enhancing the heat dissipation performance of the power module 100, reducing the temperature rise of the power module 100, and enhancing the flow capacity of the power chip 2 and even the power module 100.

[0087] In some embodiments, in combination with Figures 1, 2, 3 and 9-12, the power module 100 may further include: a substrate 5, at least a portion of the substrate 5 is encapsulated in the plastic package 1, a power pad 51 is provided on the substrate 5, the power pad 51 includes a low-voltage power pad 511 and a high-voltage power pad 512, the low-voltage power chip 21 is provided on the low-voltage power pad 511, and the high-voltage power chip 22 is provided on the high-voltage power pad 512.

[0088] Optionally, there are three low-voltage power pads 511, and the three low-voltage power pads 511 correspond to the low-voltage drive pad 311 in the first direction. There is one high-voltage power pad 512 and corresponds to the high-voltage drive pad 312 in the first direction. The three low-voltage power pads 511 and one high-voltage power pad 512 are arranged in sequence in the second direction. In addition, there are three low-voltage power chips 21, and the three low-voltage power chips 21 are respectively arranged on the three low-voltage power pads 511 in a one-to-one correspondence. The three low-voltage power chips 21 are all electrically connected to the low-voltage drive chip 41. In addition, there are three high-voltage power chips 22, and the three high-voltage power chips 22 are all arranged on one high-voltage power pad 512. The three high-voltage power chips 22 are all electrically connected to the high-voltage drive chip 42.

[0089] As shown in Figure 1, at least one core-pulling pinhole 17 is formed on one side surface of the plastic package body 1 in the thickness direction, and the power pad 51 has two end corners 52 on the side adjacent to the control side 11. The two end corners 52 are spaced apart in the second direction. In a plane perpendicular to the thickness direction of the plastic package body 1, the orthographic projections of the vertices of the two end corners 52 coincide with the orthographic projections of the centers of the two core-pulling pinholes 17 respectively.

[0090] Specifically, the plastic encapsulation body 1 is formed by injecting glue into the plastic encapsulation mold and solidifying it. Before injecting glue, the core puller can be extended to contact the power pad 51. Under the action of the core puller, the substrate 5 can be prevented from being deformed. In this way, the glue is not easy to overflow to the back of the substrate 5 during the encapsulation of the plastic encapsulation body 1, or the distance between the substrate 5 and the surface of the plastic encapsulation body 1 is ensured, which is conducive to the smooth encapsulation of the plastic encapsulation body 1 and the power performance of the power module 100. The core puller is composed of a core puller pin and a core puller sleeve. The reset position of the core puller pin and the core puller sleeve provided on the outer peripheral side of the core puller pin is usually set closer to the frame 3 than the cavity surface of the mold to prevent the resin from filling into the core puller and sleeve of the cavity. Therefore, at least one core puller hole 17 and a core puller sleeve hole on the outer peripheral side of the core puller hole 17 are formed on one side surface of the plastic encapsulation body 1 in the thickness direction.

[0091] Therefore, the core pulling pin hole 17 is the mark left on the surface of the plastic package body 1 when the core pulling pin ejector is reset. The position of the core pulling pin hole 17 is also the position where the core pulling pin ejector is extended to fix the substrate 5. The core pulling pin sleeve hole on the outer peripheral side of the core pulling pin hole 17 is the mark left on the surface of the plastic package body 1 when the core pulling pin sleeve provided on the outer peripheral side of the core pulling pin ejector is reset.

[0092] The power pad 51 has two end corners 52 on a side adjacent to the control side 11. The two end corners 52 are spaced apart in the second direction. By also providing two core pulling pin holes 17, the orthographic projections of the vertices of the two end corners 52 coincide with the orthographic projections of the centers of the two core pulling pin holes 17 in a plane perpendicular to the thickness direction of the plastic package body 1. This not only allows both ends of the power pad 51 in the second direction to be pressed by the core pulling pins, but also prevents the ends of the power pad 51 in the longitudinal direction from shifting during the encapsulation of the plastic package body 1, thereby ensuring normal plastic encapsulation. In addition, while ensuring the core pulling pin's pressing effect on the power pad 51, the area occupied by the core pulling pin on the conductive layer 53 on the power pad 51 is minimized, and the power pad 51 can be stably pressed. This increases the area available for arranging the power chip 2 and thereby improves the performance of the power module 100. In addition, the core pulling pins will not interfere with the power chip 2, thereby facilitating normal use of the power chip 2.

[0093] It should be noted that when the center of the core pulling needle is in other positions so that the area occupied by the core pulling needle on the power pad 51 is smaller, that is, the center of the core pulling needle is outside the power pad 51, the core pulling needle is easily unstable and tilted; when the center of the core pulling needle is in other positions so that the area occupied by the core pulling needle on the conductive layer 53 is larger, the area used for arranging the power chip 2 will be reduced.

[0094] In some embodiments, as shown in FIG2 and FIG3, the three low-voltage power pads 511 are respectively a first low-voltage power pad 5111, a second low-voltage power pad 5112 and a third low-voltage power pad 5113, the third low-voltage power pad 5113 is arranged adjacent to the high-voltage power pad 512 in the second direction, the first low-voltage power pad 5111 is arranged at intervals in the second direction on the side of the third low-voltage power pad 5113 away from the high-voltage power pad 512, and the second low-voltage power pad 5112 is arranged at intervals on the first low-voltage power pad 5113. 11 and the third low-voltage power pad 5113, that is: the first low-voltage power pad 5111 is closer to the left end corner 52 of the power pad 51. By setting the size of the first low-voltage power pad 5111 in the second direction to be larger than the sizes of the second low-voltage power pad 5112 and the third low-voltage power pad 5113 in the second direction, a position for avoiding the core pulling needle can be reserved in the second direction of the first low-voltage power pad 5111 to prevent the core pulling needle from squeezing the low-voltage power chip 21 on the first low-voltage power pad 5111.

[0095] Furthermore, one of the three high-voltage power chips 22 that is away from the third low-voltage power pad 5113 is defined as a first high-voltage power chip 221. In a plane perpendicular to the thickness direction of the plastic package body 1, the orthographic projection of the low-voltage power chip 21 on the first low-voltage power pad 5111 and the orthographic projection of the core-pulling pin hole 17 are spaced apart from each other, and the orthographic projection of the first high-voltage power chip 221 and the orthographic projection of the core-pulling pin hole 17 are spaced apart from each other. In this way, when the core-pulling pin passes through the position of the core-pulling pin hole 17 and contacts the power pad 51, one end of the core-pulling pin does not contact either the low-voltage power chip 21 or the high-voltage power chip 22, thereby avoiding damage to the power chip 2 by the core-pulling pin, which is beneficial to the normal use of the power module 100.

[0096] Furthermore, in a plane perpendicular to the thickness direction of the plastic package body 1 , the distance between the edges of the multiple power chips 2 adjacent to the control side 11 and the orthographic projections of the edges of the power pads 51 adjacent to the control side 11 are all equal and are L4, and L4 satisfies the relationship: 0.7mm≤L4≤0.9mm.

[0097] Specifically, in a plane perpendicular to the thickness direction of the plastic package body 1, the orthographic projection of the edge of the power chip 2 adjacent to the control side 11 is the upper edge of the orthographic projection of the power chip 2, and the orthographic projection of the edge of the power pad 51 adjacent to the control side 11 is the upper edge of the orthographic projection of the power pad 51. In other words, the distance L4 between the edge of the power chip 2 adjacent to the control side 11 and the orthographic projection of the edge of the power pad 51 adjacent to the control side 11 is the distance between the upper edge of the orthographic projection of the power chip 2 and the upper edge of the orthographic projection of the power pad 51.

[0098] By setting the distances between the edges of the multiple power chips 2 adjacent to the control side 11 and the positive projections of the edges of the power pad 51 adjacent to the control side 11 to be equal, the multiple power chips 2 include three low-voltage power chips 21 and three high-voltage power chips 22. This can make the arrangement distribution of the multiple power chips 2 on the power pad 51 more reasonable and optimize the arrangement of the electrical connection lines.

[0099] In a plane perpendicular to the thickness direction of the plastic package body 1, when the distance between the edge of the power chip 2 adjacent to the control side 11 and the orthographic projection of the edge of the power pad 51 adjacent to the control side 11 is less than 0.7 mm, the distance between the upper edge of the orthographic projection of the power chip 2 and the upper edge of the orthographic projection of the power pad 51 is too small, which not only results in insufficient placement of the pressure claws during the wire bonding process, hindering the normal wire bonding, but also may cause interference between the power chip 2 and the core pulling needle, resulting in damage to the structure of the power chip 2.

[0100] In a plane perpendicular to the thickness direction of the plastic package body 1, when the distance between the edge of the power chip 2 adjacent to the control side 11 and the orthographic projection of the edge of the power pad 51 adjacent to the control side 11 is greater than 0.9 mm, the distance between the upper edge of the orthographic projection of the power chip 2 and the upper edge of the orthographic projection of the power pad 51 is too large. Although the power chip 2 can fully avoid the core-pulling needle and the pressure claw, it will cause the electrical connection line between the power chip 2 and the driver chip 4 to be too long, causing the electrical connection line to be easily deformed or fail.

[0101] Therefore, by setting L4 to satisfy the relationship: 0.7mm≤L4≤0.9mm, the distance between the upper edge of the positive projection of the power chip 2 and the upper edge of the positive projection of the power pad 51 can be set within a reasonable range. This not only avoids the pressure claws and core pulling needles to ensure the smooth progress of wire bonding and plastic sealing, but also shortens the length of the electrical connection line between the power chip 2 and the driver chip 4, avoids deformation and failure of the electrical connection line, and improves the reliability of the power module 100.

[0102] In some embodiments, in combination with Figures 2 and 3, in a plane perpendicular to the thickness direction of the plastic package body 1, the distance between the edge of the first low-voltage power pad 5111 in the second direction away from the second low-voltage power pad 5112 and the orthographic projection of the edge of the low-voltage power chip 21 on the first low-voltage power pad 5111 in the second direction away from the second low-voltage power pad 5112 is L5, and L5 satisfies the relationship: 0.8mm≤L5≤1.2mm.

[0103] Specifically, in a plane perpendicular to the thickness direction of the plastic package body 1, the orthographic projection of the edge of the first low-voltage power pad 5111 in the second direction away from the second low-voltage power pad 5112 is: the left edge of the orthographic projection of the first low-voltage power pad 5111, and the low-voltage power chip 21 on the first low-voltage power pad 5111 is defined as the first low-voltage power chip 211, and the orthographic projection of the edge of the low-voltage power chip 21 on the first low-voltage power pad 5111 in the second direction away from the second low-voltage power pad 5112 is: the left edge of the orthographic projection of the first low-voltage power chip 211. That is to say, the distance L5 between the edge of the first low-voltage power pad 5111 in the second direction away from the second low-voltage power pad 5112 and the edge of the low-voltage power chip 21 on the first low-voltage power pad 5111 in the second direction away from the second low-voltage power pad 5112 is: the distance between the left edge of the orthographic projection of the first low-voltage power pad 5111 and the left edge of the orthographic projection of the first low-voltage power chip 211.

[0104] When the distance between the left edge of the orthographic projection of the first low-voltage power pad 5111 and the left edge of the orthographic projection of the first low-voltage power chip 211 is less than 0.8 mm, there will be no space reserved on the left side of the first low-voltage power pad 5111 to avoid the core pulling needle, causing the core pulling needle to squeeze the first low-voltage power chip 211 and damage the structure of the first low-voltage power chip 211. When the distance between the left edge of the orthographic projection of the first low-voltage power pad 5111 and the left edge of the orthographic projection of the first low-voltage power chip 211 is greater than 1.2 mm, the size of the first low-voltage power pad 5111 in the second direction will be too large, which will relatively reduce the sizes of the second low-voltage power pad 5112, the third low-voltage power pad 5113 and the high-voltage power pad 52, affecting the heat dissipation and flow of the low-voltage power chip 21 on the second low-voltage power pad 5112, the heat dissipation and flow of the low-voltage power chip 21 on the third low-voltage power pad 5113, and the heat dissipation and flow of the high-voltage power chip 22 on the high-voltage power pad 52, that is, affecting the heat dissipation performance and flow capacity of the power module 100.

[0105] Therefore, by setting L5 to satisfy the relationship: 0.8mm≤L5≤1.2mm, the distance between the left edge of the orthographic projection of the first low-voltage power pad 5111 and the left edge of the orthographic projection of the first low-voltage power chip 211 can be set within a reasonable range, which not only can fully avoid the core pulling needle on the left side of the first low-voltage power pad 5111, but also can ensure the heat dissipation performance and flow capacity of the power module 100.

[0106] In some embodiments, in combination with Figures 2 and 3, in a plane perpendicular to the thickness direction of the plastic package body 1, the distance between the edge of the high-voltage power pad 512 in the second direction away from the third low-voltage power pad 5113 and the orthographic projection of the edge of the first high-voltage power chip 221 in the second direction away from the third low-voltage power pad 5113 is L6, and L6 satisfies the relationship: 0.8mm≤L6≤1.2mm.

[0107] Specifically, in a plane perpendicular to the thickness direction of the plastic package body 1, the orthographic projection of the edge of the high-voltage power pad 512 on the side away from the third low-voltage power pad 5113 in the second direction is the right edge of the orthographic projection of the high-voltage power pad 512, and the orthographic projection of the edge of the first high-voltage power chip 221 on the side away from the third low-voltage power pad 5113 in the second direction is the right edge of the orthographic projection of the first high-voltage power chip 221. In other words, the distance L6 between the orthographic projection of the edge of the high-voltage power pad 512 on the side away from the third low-voltage power pad 5113 in the second direction and the orthographic projection of the edge of the first high-voltage power chip 221 on the side away from the third low-voltage power pad 5113 in the second direction is the distance between the right edge of the orthographic projection of the high-voltage power pad 512 and the right edge of the orthographic projection of the first high-voltage power chip 221.

[0108] When the distance between the right edge of the positive projection of the high-voltage power pad 512 and the right edge of the positive projection of the first high-voltage power chip 221 is less than 0.8 mm, there will be no space reserved on the right side of the high-voltage power pad 512 to avoid the core pulling needle, causing the core pulling needle to squeeze the first high-voltage power chip 221 and damage the structure of the first high-voltage power chip 221. When the distance between the right edge of the positive projection of the high-voltage power pad 512 and the right edge of the positive projection of the first high-voltage power chip 221 is greater than 1.2 mm, the size of the high-voltage power pad 512 in the second direction will be too large, which will relatively reduce the sizes of the first low-voltage power pad 5111, the second low-voltage power pad 5112 and the third low-voltage power pad 5113, affecting the heat dissipation and flow of the first low-voltage power chip 211, the heat dissipation and flow of the low-voltage power chip 21 on the second low-voltage power pad 5112, and the heat dissipation and flow of the low-voltage power chip 21 on the third low-voltage power pad 5113, that is, affecting the heat dissipation performance and flow capacity of the power module 100.

[0109] Therefore, by making L6 satisfy the relationship: 0.8mm≤L6≤1.2mm, the distance between the edge of the high-voltage power pad 512 in the second direction away from the third low-voltage power pad 5113 and the positive projection of the edge of the first high-voltage power chip 221 in the second direction away from the third low-voltage power pad 5113 can be set within a reasonable range. This not only can fully avoid the core pulling needle on the right side of the high-voltage power pad 512, but also can ensure the heat dissipation performance and current flow capacity of the power module 100.

[0110] In some embodiments, as shown in Figures 2 and 3 , the dimension of the plastic package 1 in the first direction is L7, where L7 satisfies the relationship: 18 mm ≤ L7 ≤ 20 mm. In this manner, the plastic package 1 can completely encapsulate at least a portion of the frame 3, substrate 5, multiple driver chips 4, and multiple power chips 2. The plastic package 1 not only provides physical and electrical protection for at least a portion of the frame 3, substrate 5, multiple driver chips 4, and multiple power chips 2, thereby improving the reliability of the power module 100, but also serves to dissipate heat, thereby ensuring the heat dissipation performance of the power module 100.

[0111] In the second embodiment of the present application, in conjunction with Figures 4, 5, and 9-12, the present embodiment provides a power module 100, which includes a plastic package 1, multiple power chips 2, a frame 3, and multiple driver chips 4. In the description of this application, "multiple" means two or more. The thickness direction of the plastic package 1 is set as the third direction, and the first direction, the second direction, and the third direction are perpendicular to each other.

[0112] Specifically, the two opposite sides of the plastic package 1 in the first direction are respectively a control side 11 and a power side 12, and a plurality of power chips 2 are disposed within the plastic package 1. The plurality of power chips 2 may include a low-voltage power chip 21 and a high-voltage power chip 22. For example, in the examples of Figures 1 and 2, the upper side of the plastic package 1 is the control side 11, and the lower side of the plastic package 1 is the power side 12. The plurality of power chips 2 are located between the control side 11 and the power side 12 of the plastic package 1. The plurality of power chips 2 include a low-voltage power chip 21 located on the left side of the plastic package 1 and a high-voltage power chip 22 located on the right side of the plastic package 1. With such an arrangement, the plastic package 1 can provide physical and electrical protection for the plurality of power chips 2 to prevent the external environment from impacting the power chips 2, thereby extending the service life of the power chips 2.

[0113] 4, 5, and 9-12, the frame 3 may include a control-side lead frame 31 and a power-side lead frame 32. The control-side lead frame 31 has a low-voltage drive pad 311, a high-voltage drive pad 312, and a plurality of control-side pins 313. There is one low-voltage drive pad 311 and one high-voltage drive pad 312. The power-side lead frame 32 has a plurality of power-side pins 321. The plurality of driver chips 4 may include a low-voltage driver chip 41 and a high-voltage driver chip 42. There is one low-voltage driver chip 41 and one high-voltage driver chip 42. The low-voltage driver chip 41 may be disposed on the low-voltage driver pad 311, and the high-voltage driver chip 42 may be disposed on the high-voltage driver pad 312. A bootstrap boost module may be integrated into the high-voltage driver chip 42.

[0114] For example, in the examples of Figures 4 and 5, the portion of the frame 3 located on the upper side of the plastic package 1 is the control-side lead frame 31, the portion of the frame 3 located on the lower side of the plastic package 1 is the power-side lead frame 32, the low-voltage drive pad 311 is located to the left of the high-voltage drive pad 312, and the low-voltage drive pad 311 is adjacent to the low-voltage power chip 21, the high-voltage drive pad 312 is adjacent to the high-voltage power chip 22, and the bootstrap boost module is integrated into the high-voltage driver chip 42. Therefore, compared with the independent arrangement of the bootstrap boost chip in the prior art, since the bootstrap boost module is integrated into the high-voltage driver chip 42, the number of chips in the power module 100 can be reduced, and it is unnecessary to set an electrical connection wire for electrical connection between the bootstrap boost module and the control-side pin 313, thereby reducing the number of electrical connection wires, thereby reducing the risk of failure, improving product reliability, and improving packaging efficiency.

[0115] In addition, the power module in the prior art mainly includes four circuits, namely, a bootstrap boost module circuit, a high-voltage drive circuit, a low-voltage drive circuit and a power device (such as a power chip) circuit. In this application, the bootstrap boost module is integrated into the high-voltage drive chip 42. At this time, the power module 100 includes three circuits, namely, a high-voltage drive circuit, a low-voltage drive circuit and a power device (such as a power chip 2) circuit, and the connection between each circuit is relatively simpler.

[0116] In addition, when the power module 100 includes three bootstrap boost modules, the number of chips in the power module 100 is reduced by three by integrating the bootstrap boost modules into the high-voltage driver chip 42, and the use of electrical connection wires for connecting the bootstrap boost modules is correspondingly eliminated. The number of chips on the power module 100 is reduced by approximately 17%, and the number of electrical connection wires is reduced by approximately 7%, thereby simplifying the packaging process of the power module 100.

[0117] As shown in Figures 4, 5 and 9 to 12, the low-voltage driver chip 41 is electrically connected to the low-voltage power chip 21, the high-voltage driver chip 42 is electrically connected to the high-voltage power chip 22, a plurality of control-side pins 313 are electrically connected to the low-voltage driver chip 41 and the high-voltage driver chip 42 respectively and extend out of the plastic package 1 from the control side 11, and a plurality of power-side pins 321 are electrically connected to the low-voltage power chip 21 and the high-voltage power chip 22 respectively and extend out of the plastic package 1 from the power side 12.

[0118] For example, in the examples of Figures 4 and 5, along the first direction, a portion of the multiple control-side pins 313 are electrically connected to the low-voltage driver chip 41, the low-voltage driver chip 41 is electrically connected to the low-voltage power chip 21, and the low-voltage power chip 21 can be electrically connected to a portion of the power-side pins 321 on the lower side of the plastic package 1. When the power module 100 is operating, the multiple control-side pins 313 and the multiple power-side pins 321 can be connected to an external controller, thereby achieving electrical connection between the internal circuit and the external circuit on the power module 100, forming an electrical loop, and thus facilitating the normal use of the power module 100. In addition, the multiple control-side pins 313 can be disassembled and assembled simultaneously, which can reduce the difficulty of disassembling and assembling the power module 100.

[0119] The low-voltage driver chip 41 and the low-voltage power chip 21 can be electrically connected via electrical connection wires, and the high-voltage driver chip 42 and the high-voltage power chip 22 can be electrically connected via electrical connection wires. Furthermore, the low-voltage driver chip 41 and the control-side pin 313 can be electrically connected via electrical connection wires, and the high-voltage driver chip 42 and the control-side pin 313 can be electrically connected via electrical connection wires. Furthermore, the low-voltage power chip 21 and the power-side pin 321 can be electrically connected via electrical connection wires, and the high-voltage power chip 22 and the power-side pin 321 can be electrically connected via electrical connection wires.

[0120] Furthermore, the plurality of control side pins 313 may include a high side drive suspension power supply voltage pin 3131 and a high side drive suspension power supply ground pin 3133, the high side drive suspension power supply voltage pin 3131 may be used to connect the high side drive suspension power supply voltage, the high side drive suspension power supply ground pin 3133 may be used to connect the high side drive suspension power supply ground voltage, by making the high side drive suspension power supply voltage pin 3131 and the high side drive suspension power supply ground pin 3133 spaced apart from the high voltage driver chip 42 in the first direction, the high side drive suspension power supply voltage pin 3131 may include a first high side drive suspension power supply voltage pin 31311, a second high side drive suspension power supply voltage pin 31312 and a first high side drive suspension power supply ground pin 3133. The three high-side drive floating power supply voltage pins 31313, the first high-side drive floating power supply voltage pin 31311, the second high-side drive floating power supply voltage pin 31312 and the third high-side drive floating power supply voltage pin 31313 correspond to the W phase, V phase and U phase respectively, and the high-side drive floating power supply ground pin 3133 may include the first high-side drive floating power supply ground pin 31331, the second high-side drive floating power supply ground pin 31332 and the third high-side drive floating power supply ground pin 31333, the first high-side drive floating power supply ground pin 31331, the second high-side drive floating power supply ground pin 31332 and the third high-side drive floating power supply ground pin 31333 correspond to the W phase, V phase and U phase respectively.

[0121] In addition, the first high-side drive floating power supply voltage pin 31311, the first high-side drive floating power supply ground pin 31331, the second high-side drive floating power supply voltage pin 31312, the second high-side drive floating power supply ground pin 31332, the third high-side drive floating power supply voltage pin 31313 and the third high-side drive floating power supply ground pin 31333 are arranged in sequence on the side away from the low-voltage drive pad 311 in the second direction, so that the first high-side drive floating power supply voltage pin 31311, the second high-side drive floating power supply voltage pin 31312, the third high-side drive floating power supply voltage pin 31313, the first high-side drive floating power supply ground pin 31331, the second high-side drive floating power supply ground pin 31332 and the third high-side drive floating power supply ground pin 31333 are respectively electrically connected to the high-voltage driver chip 42, thereby ensuring the normal operation of the intelligent power module 100.

[0122] Furthermore, since a bootstrap boost module has been integrated into the high-voltage driver chip 42, no bootstrap pads are reserved on the first high-side driver floating supply voltage pin 31311, the second high-side driver floating supply voltage pin 31312, and the third high-side driver floating supply voltage pin 31313. In this way, while ensuring that the power module 100 has a bootstrap function, the space occupied by the bootstrap pad in the first direction can be saved, and the high-voltage driver pad 312 area can be moved upward synchronously, which can reduce the size of the control side lead frame 31 in the first direction of the plastic package 1 and correspondingly increase the size of the substrate 5 for setting the power chip 2 in the first direction, thereby not only facilitating the heat dissipation of the power chip 2 and even the power module 100, but also facilitating the flow of the power chip 2 and even the power module 100.

[0123] In addition, the multiple control side pins 313 can also include a high-side driver chip power supply voltage pin 3132, and the high-voltage driver chip 42 is electrically connected to the high-side driver chip power supply voltage pin 3132. The high-side driver chip power supply voltage pin 3132 can be used to connect the high-voltage driver chip 42 to provide a power supply voltage, thereby ensuring the normal operation of the high-voltage driver chip 42. Not only can the high-voltage driver chip 42 realize the bootstrap function when working normally, but it can also ensure that the upper bridge IGBT (Insulated Gate Bipolar Transistor) of the power module 100 can be turned on normally.

[0124] By arranging the high-side driver chip power supply voltage pin 3132 between the high-voltage driver pad 312 and the low-voltage driver pad 311 in the second direction, the high-side driver chip power supply voltage pin 3132 can be brought closer to the high-side driver chip 4, thereby facilitating electrical connection between the high-side driver chip power supply voltage pin 3132 and the high-voltage driver chip 42 and shortening the length of the electrical connection line. Furthermore, the space occupied by the high-side driver chip power supply voltage pin 3132 between the high-side driver floating power supply voltage pin 3131 and the high-voltage driver pad 312 can be reduced, so that there is only a gap between the high-side driver pad 312 and the three high-side driver floating power supply voltage pins 3131. The high-voltage driver pad 312 area can be moved upward synchronously, and the size of the control-side lead frame 31 in the first direction of the plastic package 1 can be reduced. Correspondingly, the size of the substrate 5 for arranging the power chip 2 in the first direction can be increased. This not only facilitates heat dissipation of the power chip 2 and even the power module 100, but also facilitates current flow through the power chip 2 and even the power module 100. Furthermore, this can also shorten the length of the high-side driver chip power supply voltage pin 3132 and reduce the material cost of the high-side driver chip power supply voltage pin 3132. It should be noted that the size of the above gap can be specifically set according to actual needs to better meet practical applications.

[0125] Furthermore, in the second embodiment of the present application, in a plane perpendicular to the thickness direction of the plastic package body 1 , the length of the orthographic projection of the control-side lead frame 31 in the first direction is L1 , and L1 satisfies: 3.7 mm ≤ L1 ≤ 5.3 mm.

[0126] Specifically, under the premise that no bootstrap pads are reserved on the first high-side drive floating power supply voltage pin 31311, the second high-side drive floating power supply voltage pin 31312 and the third high-side drive floating power supply voltage pin 31313, and the high-side drive chip power supply voltage pin 3132 is arranged between the high-voltage drive pad 312 and the low-voltage drive pad 311 in the second direction, the size of the control side lead frame 31 in the first direction can be greatly shortened.

[0127] In a plane perpendicular to the thickness direction of the plastic package body 1 , when the length of the orthographic projection of the control side lead frame 31 in the first direction is less than 3.7 mm, the space occupied by the control side lead frame 31 on the plastic package body 1 is too small, which is not conducive to the normal use of the control side lead frame 31 .

[0128] In a plane perpendicular to the thickness direction of the plastic package 1, when the length of the orthographic projection of the control-side lead frame 31 in the first direction is greater than 5.3 mm, the control-side lead frame 31 occupies a larger space on the plastic package 1, which relatively reduces the size of the substrate 5. This not only reduces the contact area between the power module 100 and other heat dissipation components, affecting the heat dissipation performance of the power chip 2 and even the power module 100, but also affects the flow capacity of the power chip 2 and even the power module 100.

[0129] Therefore, by setting the length L1 of the orthographic projection of the control side lead frame 31 in the first direction in a plane perpendicular to the thickness direction of the plastic package body 1 to satisfy: 3.7mm≤L1≤5.3mm, the size of the control side lead frame 31 can be set within a reasonable range, which not only facilitates the use of the control side lead frame 31, but also shortens the size of the control side lead frame 31 in the first direction, and facilitates increasing the size of the substrate 5, thereby facilitating heat exchange between the power chip 2 and the outside world through the substrate 5, enhancing the heat dissipation performance of the power module 100, reducing the temperature rise of the power module 100, and enhancing the flow capacity of the power chip 2 and even the power module 100, thereby improving the reliability of the power module 100.

[0130] Therefore, by integrating a bootstrap boost module in the high-voltage driver chip 42, no bootstrap pads are reserved on the first high-side driver floating supply voltage pin 31311, the second high-side driver floating supply voltage pin 31312 and the third high-side driver floating supply voltage pin 31313, so that the high-side driver chip supply voltage pin 3132 is spaced between the high-voltage driver pad 312 and the low-voltage driver pad 311 in the second direction, and in a plane perpendicular to the thickness direction of the plastic package body 1, the length L1 of the orthographic projection of the control-side lead frame 31 in the first direction satisfies: 3.7 mm ≤ L1 ≤ 5.3 mm. In this way, not only the heat dissipation performance of the power module 100 can be improved, but also the current carrying capacity of the power module 100 can be improved.

[0131] As shown in Figures 4 and 5, in Example 2 of the present application, in a plane perpendicular to the thickness direction of the plastic package body 1, the distance between the edge of the high-voltage driving pad 312 adjacent to the control side 11 and the positive projection of the edge of the high-voltage driving pad 312 facing away from the control side 11 is L8, and L8 satisfies the relationship: 2.3mm≤L8≤3.1mm.

[0132] Specifically, in a plane perpendicular to the thickness direction of the plastic package body 1, the orthographic projection of the edge of the high-voltage driving pad 312 adjacent to the control side 11 is the upper edge of the orthographic projection of the high-voltage driving pad 312, and the orthographic projection of the edge of the high-voltage driving pad 312 facing away from the control side 11 is the lower edge of the orthographic projection of the high-voltage driving pad 312. In other words, in a plane perpendicular to the thickness direction of the plastic package body 1, the distance between the edge of the high-voltage driving pad 312 adjacent to the control side 11 and the orthographic projection of the edge of the high-voltage driving pad 312 facing away from the control side 11 is the distance L8 between the upper edge of the orthographic projection of the high-voltage driving pad 312 and the lower edge of the orthographic projection of the high-voltage driving pad 312, that is, the size of the orthographic projection of the high-voltage driving pad 312 in the first direction.

[0133] In a plane perpendicular to the thickness direction of the plastic package body 1, if the distance between the edge of the high-voltage driving pad 312 adjacent to the control side 11 and the orthographic projection of the edge of the high-voltage driving pad 312 facing away from the control side 11 is less than 2.3 mm, that is, when the orthographic projection of the high-voltage driving pad 312 in the first direction is less than 2.3 mm, it will result in insufficient setting position on the high-voltage driving pad 312 to set the high-voltage driving chip 42.

[0134] In a plane perpendicular to the thickness direction of the plastic package body 1, if the distance between the edge of the high-voltage drive pad 312 adjacent to the control side 11 and the orthographic projection of the edge of the high-voltage drive pad 312 facing away from the control side 11 is greater than 3.1 mm, that is, if the orthographic projection of the high-voltage drive pad 312 in the first direction is greater than 3.1 mm, the size of the control-side pin 313 will be too small, which will not only cause the high-voltage drive pad 312 to be too close to the control side 11, making it easy for moisture to affect the operation of the high-voltage drive chip 42 on the high-voltage drive pad 312, but will also cause the structural strength of the control-side pin 313 to be low, causing the frame 3 to wobble. In addition, the size of the substrate 5 is relatively reduced, which not only reduces the contact area between the power module 100 and other heat dissipation components, affecting the heat dissipation performance of the power chip 2 and even the power module 100, but also affects the current flow capacity of the power chip 2 and even the power module 100.

[0135] Therefore, by setting L8 to satisfy the relationship: 2.3mm≤L8≤3.1mm, the size of the high-voltage drive pad 312 in the first direction can be made more reasonable. On the premise of ensuring that the high-voltage drive pad 312 has sufficient setting position to place the high-voltage drive chip 42, and reducing the size of the control side pin 313 in the first direction, and ensuring the structural strength of the control side pin 313, not only can the high-voltage drive pad 312 be closer to the inside, avoiding the influence of water vapor on the high-voltage drive chip 42, improving the reliability of the power module 100, and ensuring the normal operation of the power module 100, but also it can facilitate the increase of the size of the substrate 5, thereby facilitating the power chip 2 to exchange heat with the outside world through the substrate 5, thereby enhancing the heat dissipation performance of the power chip 2 and even the power module 100, reducing the temperature rise of the power module 100, and enhancing the flow capacity of the power chip 2 and even the power module 100.

[0136] In some embodiments, as shown in Figures 4 and 5, the power module 100 may further include: a substrate 5, at least a portion of the substrate 5 is encapsulated in the plastic package 1, a power chip 2 is provided on the substrate 5, and in a plane perpendicular to the thickness direction of the plastic package 1, the length of the orthographic projection of the substrate 5 in the first direction is L9, and L9 satisfies the relationship: 9.5mm≤L3≤10.5mm.

[0137] Specifically, at least a portion of the substrate 5 is encapsulated in the plastic package 1. By arranging the power chip 2 on the substrate 5, the substrate 5 can play a supporting role for the power chip 2, and the plastic package 1 can protect at least a portion of the substrate 5 and the power chip 2 arranged on the substrate 5, thereby ensuring the reliability of the power module 100.

[0138] On the premise that no bootstrap pads are reserved on the first high-side drive floating power supply voltage pin 31311, the second high-side drive floating power supply voltage pin 31312 and the third high-side drive floating power supply voltage pin 31313, and the high-side drive chip power supply voltage pin 3132 is arranged between the high-voltage drive pad 312 and the low-voltage drive pad 311 in the second direction, the size of the control side lead frame 31 in the first direction can be greatly shortened, thereby facilitating the increase of the size of the substrate 5 in the first direction.

[0139] In a plane perpendicular to the thickness of the plastic package 1, when the length of the orthographic projection of the substrate 5 in the first direction is less than 9.5 mm, the substrate 5 is too small in the first direction, affecting its normal use. This not only makes it difficult to place the power chip 2 on the substrate 5, but also affects the heat exchange between the power chip 2 and the outside world through the substrate 5, thereby affecting the heat dissipation performance and flow capacity of the power module 100. Furthermore, under the same plastic package 1, if the substrate 5 is too small while shortening the length of the control-side lead frame 31 in the first direction, the gap between the substrate 5 and the control-side lead frame 31 will be too large, resulting in a waste of space within the plastic package 1.

[0140] In a plane perpendicular to the thickness direction of the plastic package body 1, when the length of the orthographic projection of the substrate 5 in the first direction is greater than 10.5 mm, the substrate 5 occupies a larger space on the plastic package body 1, which will relatively reduce the size of the control side lead frame 31 and affect the normal use of the control side lead frame 31.

[0141] Therefore, by setting the length L9 of the orthographic projection of the substrate 5 in the first direction in a plane perpendicular to the thickness direction of the plastic package 1 to satisfy the relationship: 9.5mm≤L9≤10.5mm, the size of the substrate 5 in the first direction can be set within a reasonable range. On the premise of ensuring that the control-side lead frame 31 and the substrate 5 can be used normally, the substrate 5 can make full use of the space inside the plastic package 1, increase the size of the substrate 5 in the first direction, and increase the area of ​​the substrate 5, which can be beneficial to the heat dissipation and flow of the power chip 2, improve the heat dissipation performance of the power module 100, and improve the flow capacity of the power module 100.

[0142] In some embodiments, in combination with Figures 4, 5 and 9-12, a power pad 51 is provided on the substrate 5, and the power pad 51 includes a low-voltage power pad 511 and a high-voltage power pad 512. The low-voltage power chip 21 is provided on the low-voltage power pad 511, and the high-voltage power chip 22 is provided on the high-voltage power pad 512.

[0143] Optionally, there are three low-voltage power pads 511, and the three low-voltage power pads 511 correspond to the low-voltage drive pad 311 in the first direction. There is one high-voltage power pad 512 and corresponds to the high-voltage drive pad 312 in the first direction. The three low-voltage power pads 511 and one high-voltage power pad 512 are arranged in sequence in the second direction. In addition, there are three low-voltage power chips 21, and the three low-voltage power chips 21 are respectively arranged on the three low-voltage power pads 511 in a one-to-one correspondence. The three low-voltage power chips 21 are all electrically connected to the low-voltage drive chip 41. In addition, there are three high-voltage power chips 22, and the three high-voltage power chips 22 are all arranged on one high-voltage power pad 512. The three high-voltage power chips 22 are all electrically connected to the high-voltage drive chip 42.

[0144] In the second embodiment of the present application, as shown in Figures 4 and 5 , the dimension of the plastic package 1 in the first direction is L7, and L7 satisfies the relationship: 18mm≤L7≤20mm. In this way, the plastic package 1 can completely encapsulate at least a portion of the frame 3, the substrate 5, the multiple driver chips 4, and the multiple power chips 2. The plastic package 1 not only provides physical and electrical protection for at least a portion of the frame 3, the substrate 5, the multiple driver chips 4, and the multiple power chips 2, thereby improving the reliability of the power module 100, but also plays a role in heat dissipation, thereby ensuring the heat dissipation performance of the power module 100.

[0145] In the third embodiment of the present application, as shown in Figures 6, 7, 8, and 9-12, a power module 100 according to the first embodiment of the present application includes a plastic package 1, multiple power chips 2, a frame 3, and multiple driver chips 4. In the description of the present application, the meaning of "multiple" is two or more. The thickness direction of the plastic package 1 is set as the third direction, and the first direction, the second direction, and the third direction are perpendicular to each other.

[0146] Specifically, the two opposite sides of the plastic package 1 in the first direction are respectively a control side 11 and a power side 12. A plurality of power chips 2 are disposed within the plastic package 1. The plurality of power chips 2 may include a low-voltage power chip 21 and a high-voltage power chip 22. For example, in the examples of Figures 6 and 7, the upper side of the plastic package 1 is the control side 11, and the lower side of the plastic package 1 is the power side 12. The plurality of power chips 2 are located between the control side 11 and the power side 12 of the plastic package 1. The plurality of power chips 2 include a low-voltage power chip 21 located on the left side of the plastic package 1 and a high-voltage power chip 22 located on the right side of the plastic package 1. With this arrangement, the plastic package 1 can provide physical and electrical protection for the plurality of power chips 2 to prevent the external environment from impacting the power chips 2, thereby extending the service life of the power chips 2.

[0147] 6 , 7 , 8 , and 9 to 12 , the frame 3 may include a control-side lead frame 31 and a power-side lead frame 32. The control-side lead frame 31 has a low-voltage drive pad 311, a high-voltage drive pad 312, and a plurality of control-side pins 313. There is one low-voltage drive pad 311 and one high-voltage drive pad 312. The power-side lead frame 32 has a plurality of power-side pins 321. The plurality of driver chips 4 may include a low-voltage driver chip 41 and a high-voltage driver chip 42. There is one low-voltage driver chip 41 and one high-voltage driver chip 42. The low-voltage driver chip 41 may be disposed on the low-voltage driver pad 311, and the high-voltage driver chip 42 may be disposed on the high-voltage driver pad 312. A bootstrap boost module may be integrated into the high-voltage driver chip 42.

[0148] For example, in the examples of Figures 6 and 7, the portion of the frame 3 located on the upper side of the plastic package 1 is the control-side lead frame 31, the portion of the frame 3 located on the lower side of the plastic package 1 is the power-side lead frame 32, the low-voltage drive pad 311 is located to the left of the high-voltage drive pad 312, and the low-voltage drive pad 311 is adjacent to the low-voltage power chip 21, the high-voltage drive pad 312 is adjacent to the high-voltage power chip 22, and the bootstrap boost module is integrated into the high-voltage driver chip 42. Therefore, compared with the independent provision of the bootstrap boost chip in the prior art, since the bootstrap boost module is integrated into the high-voltage driver chip 42, the number of chips in the power module 100 can be reduced, and it is unnecessary to provide an electrical connection wire for electrical connection between the bootstrap boost module and the control-side pin 313, thereby reducing the number of electrical connection wires, thereby reducing the risk of failure, improving product reliability, and improving packaging efficiency.

[0149] In addition, the power module in the prior art mainly includes four circuits, namely, a bootstrap boost module circuit, a high-voltage drive circuit, a low-voltage drive circuit and a power device (such as a power chip) circuit. In this application, the bootstrap boost module is integrated into the high-voltage drive chip 42. At this time, the power module 100 includes three circuits, namely, a high-voltage drive circuit, a low-voltage drive circuit and a power device (such as a power chip 2) circuit, and the connection between each circuit is relatively simpler.

[0150] In addition, when the power module 100 includes three bootstrap boost modules, the number of chips in the power module 100 is reduced by three by integrating the bootstrap boost modules into the high-voltage driver chip 42, and the use of electrical connection wires for connecting the bootstrap boost modules is correspondingly eliminated. The number of chips on the power module 100 is reduced by approximately 17%, and the number of electrical connection wires is reduced by approximately 7%, thereby simplifying the packaging process of the power module 100.

[0151] As shown in Figures 6, 7, 8 and 9-12, the low-voltage driver chip 41 is electrically connected to the low-voltage power chip 21, the high-voltage driver chip 42 is electrically connected to the high-voltage power chip 22, a plurality of control-side pins 313 are electrically connected to the low-voltage driver chip 41 and the high-voltage driver chip 42 respectively and extend out of the plastic package 1 from the control side 11, and a plurality of power-side pins 321 are electrically connected to the low-voltage power chip 21 and the high-voltage power chip 22 respectively and extend out of the plastic package 1 from the power side 12.

[0152] For example, in the examples of Figures 6 and 7, along the first direction, a portion of the multiple control-side pins 313 are electrically connected to the low-voltage driver chip 41, the low-voltage driver chip 41 is electrically connected to the low-voltage power chip 21, and the low-voltage power chip 21 can be electrically connected to a portion of the power-side pins 321 on the lower side of the plastic package 1. When the power module 100 is operating, the multiple control-side pins 313 and the multiple power-side pins 321 can be connected to an external controller, thereby achieving electrical connection between the internal circuit and the external circuit on the power module 100, forming an electrical loop, and thus facilitating the normal use of the power module 100. In addition, the multiple control-side pins 313 can be disassembled and assembled simultaneously, which can reduce the difficulty of disassembling and assembling the power module 100.

[0153] The low-voltage driver chip 41 and the low-voltage power chip 21 can be electrically connected via electrical connection wires, and the high-voltage driver chip 42 and the high-voltage power chip 22 can be electrically connected via electrical connection wires. Furthermore, the low-voltage driver chip 41 and the control-side pin 313 can be electrically connected via electrical connection wires, and the high-voltage driver chip 42 and the control-side pin 313 can be electrically connected via electrical connection wires. Furthermore, the low-voltage power chip 21 and the power-side pin 321 can be electrically connected via electrical connection wires, and the high-voltage power chip 22 and the power-side pin 321 can be electrically connected via electrical connection wires.

[0154] Furthermore, the plurality of control side pins 313 may include a high side drive suspension power supply voltage pin 3131 and a high side drive suspension power supply ground pin 3133, the high side drive suspension power supply voltage pin 3131 may be used to connect the high side drive suspension power supply voltage, the high side drive suspension power supply ground pin 3133 may be used to connect the high side drive suspension power supply ground voltage, by making the high side drive suspension power supply voltage pin 3131 and the high side drive suspension power supply ground pin 3133 spaced apart from the high voltage driver chip 42 in the first direction, the high side drive suspension power supply voltage pin 3131 may include a first high side drive suspension power supply voltage pin 31311, a second high side drive suspension power supply voltage pin 31312 and a first high side drive suspension power supply ground pin 3133. The three high-side drive floating power supply voltage pins 31313, the first high-side drive floating power supply voltage pin 31311, the second high-side drive floating power supply voltage pin 31312 and the third high-side drive floating power supply voltage pin 31313 correspond to the W phase, V phase and U phase respectively, and the high-side drive floating power supply ground pin 3133 may include the first high-side drive floating power supply ground pin 31331, the second high-side drive floating power supply ground pin 31332 and the third high-side drive floating power supply ground pin 31333, the first high-side drive floating power supply ground pin 31331, the second high-side drive floating power supply ground pin 31332 and the third high-side drive floating power supply ground pin 31333 correspond to the W phase, V phase and U phase respectively.

[0155] In addition, the first high-side drive floating power supply voltage pin 31311, the first high-side drive floating power supply ground pin 31331, the second high-side drive floating power supply voltage pin 31312, the second high-side drive floating power supply ground pin 31332, the third high-side drive floating power supply voltage pin 31313 and the third high-side drive floating power supply ground pin 31333 are arranged in sequence on the side away from the low-voltage drive pad 311 in the second direction, so that the first high-side drive floating power supply voltage pin 31311, the second high-side drive floating power supply voltage pin 31312, the third high-side drive floating power supply voltage pin 31313, the first high-side drive floating power supply ground pin 31331, the second high-side drive floating power supply ground pin 31332 and the third high-side drive floating power supply ground pin 31333 are respectively electrically connected to the high-voltage driver chip 42, thereby ensuring the normal operation of the intelligent power module 100.

[0156] In addition, the multiple control side pins 313 can also include a high-side driver chip power supply voltage pin 3132, and the high-voltage driver chip 42 is electrically connected to the high-side driver chip power supply voltage pin 3132. The high-side driver chip power supply voltage pin 3132 can be used to connect the high-voltage driver chip 42 to provide a power supply voltage, thereby ensuring the normal operation of the high-voltage driver chip 42. Not only can the high-voltage driver chip 42 realize the bootstrap function when working normally, but it can also ensure that the upper bridge IGBT (Insulated Gate Bipolar Transistor) of the power module 100 can be turned on normally.

[0157] By arranging the high-side driver chip power supply voltage pin 3132 between the high-voltage driver pad 312 and the low-voltage driver pad 311 in the second direction, the high-side driver chip power supply voltage pin 3132 can be brought closer to the high-side driver chip 4, thereby facilitating electrical connection between the high-side driver chip power supply voltage pin 3132 and the high-voltage driver chip 42 and shortening the length of the electrical connection line. Furthermore, the space occupied by the high-side driver chip power supply voltage pin 3132 between the high-side driver floating power supply voltage pin 3131 and the high-voltage driver pad 312 can be reduced, so that there is only a gap between the high-side driver pad 312 and the three high-side driver floating power supply voltage pins 3131. The high-voltage driver pad 312 area can be moved upward synchronously, and the size of the control-side lead frame 31 in the first direction of the plastic package 1 can be reduced. Correspondingly, the size of the substrate 5 for arranging the power chip 2 in the first direction can be increased. This not only facilitates heat dissipation of the power chip 2 and even the power module 100, but also facilitates current flow through the power chip 2 and even the power module 100. Furthermore, this can also shorten the length of the high-side driver chip power supply voltage pin 3132 and reduce the material cost of the high-side driver chip power supply voltage pin 3132. It should be noted that the size of the above gap can be specifically set according to actual needs to better meet practical applications.

[0158] Furthermore, the two sides of the first direction of the plastic package body 1 are defined as the first long side 13 and the second long side 14, the control side 11 is located on the first long side 13, the power side 12 is located on the second long side 14, and the two sides of the second direction of the plastic package body 1 are defined as the first short side 15 and the second short side 16. Compared with the second short side 16, the first short side 15 is adjacent to the high-voltage driving pad 312.

[0159] In the prior art, for a power module with an external bootstrap chip, the bootstrap chip is mostly arranged on a bootstrap pad on a high-side drive floating power supply voltage pin, and one end of the high-side drive chip power supply voltage pin is led out from the first long side, so that the part of the high-side drive chip power supply voltage pin located in the plastic package is extended along the periphery of the high-voltage drive pad, at least a part of the high-side drive chip power supply voltage pin is located between the high-voltage drive pad and the low-voltage drive pad in the second direction, and at least a part of the high-side drive chip power supply voltage pin is located between the high-voltage drive pad and the three high-side drive floating power supply pads in the first direction. The third high-side driver floating power ground pin is located between the third high-side driver floating power supply pins, and the high-side driver chip power supply voltage pin is extended toward the second short side. At least a portion of the high-side driver chip power supply voltage pin is located on a side of the third high-side driver floating power supply ground pin that is away from the third high-side driver floating power supply voltage pin in the second direction. The other end of the high-side driver chip power supply voltage pin is led out from the first short side. This not only facilitates the electrical connection between the three external bootstrap chips and the high-voltage driver chip and the high-side driver chip power supply voltage pin, but also supports both ends of the high-side driver chip power supply voltage pin in two directions to prevent shaking.

[0160] In the embodiment of the present application, since the high-voltage driver chip 42 has a built-in bootstrap boost module, it is only necessary to electrically connect the high-side driver chip supply voltage pin 3132 to the high-voltage driver chip 42, and the high-side driver chip supply voltage pin 3132 does not need to be electrically connected to the bootstrap boost module. Therefore, the portion of the high-side driver chip supply voltage pin in the prior art that is spaced apart in the second direction between the high-voltage driver pad and the low-voltage driver pad can be retained, while the portion of the high-side driver chip supply voltage pin in the prior art that is located between the high-voltage driver pad and the three high-side driver floating supply voltage pins can be eliminated.

[0161] The high-side driver chip power supply voltage pin in the prior art is arranged between the high-voltage driver pad and the low-voltage driver pad in the second direction, that is, the high-side driver chip power supply voltage pin 3132 of the present application, and the high-side driver chip power supply voltage pin 3132 is arranged between the high-voltage driver pad 312 and the low-voltage driver pad 311 in the second direction.

[0162] Furthermore, in order to ensure the consistency of the appearance of the power module 100, at least a portion of the high-side driver chip power supply voltage pin in the prior art, which is located on the side of the third high-side driver floating power supply ground pin in the second direction away from the third high-side driver floating power supply voltage pin and is led out from the first short side, can be retained.

[0163] The high-side driver chip power supply voltage pin in the prior art is located on the side of the third high-side driver floating power supply ground pin in the second direction away from the third high-side driver floating power supply voltage pin and at least a part thereof is led out from the first short side, namely the first support pin 3134 of the present application. The first support pin 3134 is located on the side of the third high-side driver floating power supply ground pin 31333 in the second direction away from the third high-side driver floating power supply voltage pin 31313 and is exposed from the first short side 15.

[0164] It can be understood that the first support pin 3134 is arranged adjacent to the third high-side drive floating power supply ground pin 31333, the third high-side drive floating power supply ground pin 31333 is led outward from the first long side 13, and the first support pin 3134 is led outward from the first short side 15. By connecting the first support pin 3134 with the third high-side drive floating power supply ground pin 31333, while maintaining the consistency of the pin appearance of the power module 100, not only can the structural strength of the first support pin 3134 and the third high-side drive floating power supply ground pin 31333 be enhanced, and the third high-side drive floating power supply ground pin 31333 can be prevented from warping and deformation, but the first support pin 3134 and the third high-side drive floating power supply ground pin 31333 can also be formed into a whole to support from two directions, thereby avoiding the shaking of the first support pin 3134 and the third high-side drive floating power supply ground pin 31333 when supported in a single direction, thereby improving the reliability of the power module 100.

[0165] Thus, by integrating a bootstrap boost module in the high-voltage driver chip 42, the control side pin 313 also includes a high-side driver chip power supply voltage pin 3132 and a first support pin 3134. The high-side driver chip power supply voltage pin 3132 is spaced apart between the high-voltage driver pad 312 and the low-voltage driver pad 311 in the second direction and is electrically connected to the high-voltage driver chip 42. The third high-side driver suspension power supply ground pin 31333 is led outward from the first long side 13. The first support pin 3134 is located at the third high-side driver suspension power supply ground pin 31333 in the second direction away from the third high-side driver suspension power supply voltage pin 313. 13 and is exposed outward from the first short side 15, and the first support pin 3134 is connected to the third high-side drive floating power supply ground pin 31333. In this way, under the premise of improving the heat dissipation performance and current flow capacity of the power module 100, the structural design of the control side lead frame 31 can be optimized, and the first support pin 3134 and the third high-side drive floating power supply ground pin 31333 can be formed into a whole to support from two directions, thereby avoiding the shaking of the first support pin 3134 and the third high-side drive floating power supply ground pin 31333 when supported in a single direction, and improving the reliability of the power module 100.

[0166] In some embodiments, in combination with Figures 6 and 7, the third high-side drive floating power supply ground pin 31333 can mainly include a first pin portion 313331 and a second pin portion 313332. The first pin portion 313331 is extended in the first direction, and the first pin portion 313331 extends from the first long side 13 away from the side of the third high-side drive floating power supply voltage pin 31313. By arranging the second pin portion 313332 on the side of the first pin portion 313331 facing the third high-side drive floating power supply voltage pin 31313, the second pin portion 313332 can be directed towards the high-voltage drive pad 312, thereby facilitating the electrical connection between the second pin portion 313332 and the high-voltage driver chip 42, and shortening the length of the electrical connection line between the third high-side drive floating power supply ground pin 31333 and the high-voltage driver chip 42.

[0167] Furthermore, the first support pin 3134 is connected to the side of the first pin portion 313331 away from the second pin portion 313332, and the first support pin 3134 and the second pin portion 313332 are spaced apart in the second direction, that is, the first support pin 3134 and the second pin portion 313332 are both extended in the second direction, and the first support pin 3134 and the second pin portion 313332 are respectively connected to the two sides of the first pin portion 313331 in the second direction. By making the first support portion closer to the first long side 13 than the second pin portion 313332, In this way, under the premise of ensuring that the first support pin 3134 and the third high-side drive floating power supply ground pin 31333 are supported from two directions, the overall structure formed by the connection of the first support pin 3134 and the third high-side drive floating power supply ground pin 31333 can be made stronger, and the overall structure formed by the connection of the first support pin 3134 and the third high-side drive floating power supply ground pin 31333 can be made more stable, thereby further avoiding deformation of the first support pin 3134 and the third high-side drive floating power supply ground pin 31333, and improving the reliability of the power module 100.

[0168] As shown in Figures 6 and 7 , a second support pin 3121 is provided on a side of the high-voltage driving pad 312 in the second direction away from the low-voltage driving pad 311. The second support pin 3121 may mainly include a first support pin portion 31211 and a second support pin portion 31212. The first support pin portion 31211 is connected to the high-voltage driving pad 312 and extends in the second direction. The second support pin portion 31212 is connected to a side of the first support pin portion 31211 away from the high-voltage driving pad 312, so that the second support pin portion 31212 is exposed outward from the first short side 15, and the second support pin portion 31212 and the first support pin 3134 are spaced apart in the first direction.

[0169] With this arrangement, the second supporting pin portion 31212 can also play a supporting role in the second direction to avoid unilateral shaking, which can further improve the stability and reliability of the frame 3 and even the power module 100.

[0170] In some embodiments, as shown in Figures 6 and 8, in a plane perpendicular to the thickness direction of the plastic package body 1, the distance between the edge of the high-voltage driving pad 312 adjacent to the control side 11 and the positive projection of the edge of the high-voltage driving pad 312 facing away from the control side 11 is L8, and L8 satisfies the relationship: 2.3mm≤L8≤3.1mm.

[0171] Specifically, in a plane perpendicular to the thickness direction of the plastic package body 1, the orthographic projection of the edge of the high-voltage driving pad 312 adjacent to the control side 11 is the upper edge of the orthographic projection of the high-voltage driving pad 312, and the orthographic projection of the edge of the high-voltage driving pad 312 facing away from the control side 11 is the lower edge of the orthographic projection of the high-voltage driving pad 312. In other words, in a plane perpendicular to the thickness direction of the plastic package body 1, the distance between the edge of the high-voltage driving pad 312 adjacent to the control side 11 and the orthographic projection of the edge of the high-voltage driving pad 312 facing away from the control side 11 is the distance L1 between the upper edge of the orthographic projection of the high-voltage driving pad 312 and the lower edge of the orthographic projection of the high-voltage driving pad 312, that is, the size of the orthographic projection of the high-voltage driving pad 312 in the first direction.

[0172] In a plane perpendicular to the thickness direction of the plastic package body 1, if the distance between the edge of the high-voltage driving pad 312 adjacent to the control side 11 and the orthographic projection of the edge of the high-voltage driving pad 312 facing away from the control side 11 is less than 2.3 mm, that is, when the orthographic projection of the high-voltage driving pad 312 in the first direction is less than 2.3 mm, there will not be enough setting position on the high-voltage driving pad 312 to set the high-voltage driving chip 42.

[0173] In a plane perpendicular to the thickness direction of the plastic package body 1, if the distance between the edge of the high-voltage drive pad 312 adjacent to the control side 11 and the orthographic projection of the edge of the high-voltage drive pad 312 facing away from the control side 11 is greater than 3.1 mm, that is, if the orthographic projection of the high-voltage drive pad 312 in the first direction is greater than 3.1 mm, the size of the control-side pin 313 will be too small, which will not only cause the high-voltage drive pad 312 to be too close to the control side 11, making it easy for moisture to affect the operation of the high-voltage drive chip 42 on the high-voltage drive pad 312, but will also cause the structural strength of the control-side pin 313 to be low, causing the frame 3 to wobble. In addition, the size of the substrate 5 is relatively reduced, which not only reduces the contact area between the power module 100 and other heat dissipation components, affecting the heat dissipation performance of the power chip 2 and even the power module 100, but also affects the current flow capacity of the power chip 2 and even the power module 100.

[0174] Therefore, by setting L8 to satisfy the relationship: 2.3mm≤L8≤3.1mm, the size of the high-voltage drive pad 312 in the first direction can be made more reasonable. On the premise of ensuring that the high-voltage drive pad 312 has sufficient setting position to place the high-voltage drive chip 42, and reducing the size of the control side pin 313 in the first direction, and ensuring the structural strength of the control side pin 313, not only can the high-voltage drive pad 312 be closer to the inside, avoiding the influence of water vapor on the high-voltage drive chip 42, improving the reliability of the power module 100, and ensuring the normal operation of the power module 100, but also it can facilitate the increase of the size of the substrate 5, thereby facilitating the power chip 2 to exchange heat with the outside world through the substrate 5, thereby enhancing the heat dissipation performance of the power chip 2 and even the power module 100, reducing the temperature rise of the power module 100, and enhancing the flow capacity of the power chip 2 and even the power module 100.

[0175] In some embodiments, as shown in Figures 6 and 8, the power module 100 may further include: a substrate 5, at least a portion of the substrate 5 is encapsulated in the plastic package 1, a power chip 2 is provided on the substrate 5, and in a plane perpendicular to the thickness direction of the plastic package 1, the length of the orthographic projection of the substrate 5 in the first direction is L9, and L9 satisfies the relationship: 9.5mm≤L9≤10.5mm.

[0176] Specifically, at least a portion of the substrate 5 is encapsulated in the plastic package 1. By arranging the power chip 2 on the substrate 5, the substrate 5 can play a supporting role for the power chip 2, and the plastic package 1 can protect at least a portion of the substrate 5 and the power chip 2 arranged on the substrate 5, thereby ensuring the reliability of the power module 100.

[0177] On the premise that no bootstrap pads are reserved on the first high-side drive floating power supply voltage pin 31311, the second high-side drive floating power supply voltage pin 31312 and the third high-side drive floating power supply voltage pin 31313, and the high-side drive chip power supply voltage pin 3132 is arranged between the high-voltage drive pad 312 and the low-voltage drive pad 311 in the second direction, the size of the control side lead frame 31 in the first direction can be greatly shortened, thereby facilitating the increase of the size of the substrate 5 in the first direction.

[0178] In a plane perpendicular to the thickness of the plastic package 1, when the length of the orthographic projection of the substrate 5 in the first direction is less than 9.5 mm, the substrate 5 is too small in the first direction, affecting its normal use. This not only makes it difficult to place the power chip 2 on the substrate 5, but also affects the heat exchange between the power chip 2 and the outside world through the substrate 5, thereby affecting the heat dissipation performance and flow capacity of the power module 100. Furthermore, under the same plastic package 1, if the substrate 5 is too small while shortening the length of the control-side lead frame 31 in the first direction, the gap between the substrate 5 and the control-side lead frame 31 will be too large, resulting in a waste of space within the plastic package 1.

[0179] In a plane perpendicular to the thickness direction of the plastic package body 1, when the length of the orthographic projection of the substrate 5 in the first direction is greater than 10.5 mm, the substrate 5 occupies a larger space on the plastic package body 1, which will relatively reduce the size of the control side lead frame 31 and affect the normal use of the control side lead frame 31.

[0180] Therefore, by setting the length L9 of the orthographic projection of the substrate 5 in the first direction in a plane perpendicular to the thickness direction of the plastic package 1 to satisfy the relationship: 9.5mm≤L9≤10.5mm, the size of the substrate 5 in the first direction can be set within a reasonable range. On the premise of ensuring that the control-side lead frame 31 and the substrate 5 can be used normally, the substrate 5 can make full use of the space inside the plastic package 1, increase the size of the substrate 5 in the first direction, and increase the area of ​​the substrate 5, which can be beneficial to the heat dissipation and flow of the power chip 2, improve the heat dissipation performance of the power module 100, and improve the flow capacity of the power module 100.

[0181] As shown in Figures 6, 7, 8 and 9 to 12, a power pad 51 is provided on the substrate 5. The power pad 51 includes a low-voltage power pad 511 and a high-voltage power pad 512. The low-voltage power chip 21 is provided on the low-voltage power pad 511, and the high-voltage power chip 22 is provided on the high-voltage power pad 512.

[0182] Optionally, there are three low-voltage power pads 511, and the three low-voltage power pads 511 correspond to the low-voltage drive pad 311 in the first direction. There is one high-voltage power pad 512 and corresponds to the high-voltage drive pad 312 in the first direction. The three low-voltage power pads 511 and one high-voltage power pad 512 are arranged in sequence in the second direction. In addition, there are three low-voltage power chips 21, and the three low-voltage power chips 21 are respectively arranged on the three low-voltage power pads 511 in a one-to-one correspondence. The three low-voltage power chips 21 are all electrically connected to the low-voltage drive chip 41. In addition, there are three high-voltage power chips 22, and the three high-voltage power chips 22 are all arranged on one high-voltage power pad 512. The three high-voltage power chips 22 are all electrically connected to the high-voltage drive chip 42.

[0183] As shown in Figures 6 and 8 , the dimension of the plastic package 1 in the first direction is L7, where L7 satisfies the relationship: 18 mm ≤ L7 ≤ 20 mm. In this manner, the plastic package 1 completely encapsulates at least a portion of the frame 3, substrate 5, multiple driver chips 4, and multiple power chips 2. This not only provides physical and electrical protection for at least a portion of the frame 3, substrate 5, multiple driver chips 4, and multiple power chips 2, thereby improving the reliability of the power module 100, but also serves to dissipate heat, thereby ensuring the heat dissipation performance of the power module 100.

[0184] In Example 1, Example 2 or Example 3 of the present application, at least one of the low-voltage power chip 21 and the high-voltage power chip 22 is a reverse-conducting insulated gate bipolar transistor (RC-IGBT), that is, the low-voltage power chip 21 alone is a reverse-conducting insulated gate bipolar transistor, or the high-voltage power chip 22 alone is a reverse-conducting insulated gate bipolar transistor, or both the low-voltage power chip 21 and the high-voltage power chip 22 are reverse-conducting insulated gate bipolar transistors.

[0185] In Example 1, Example 2 or Example 3 of the present application, at least one of the low-voltage power chip 21 and the high-voltage power chip 22 is a metal-oxide semiconductor field-effect transistor (MOSFET), that is, the low-voltage power chip 21 alone is a metal-oxide semiconductor field-effect transistor, and the high-voltage power chip 22 alone is a metal-oxide semiconductor field-effect transistor, and the low-voltage power chip 21 and the high-voltage power chip 22 are both metal-oxide semiconductor field-effect transistors.

[0186] It should be noted that the reverse conducting insulated gate bipolar transistor and the metal-oxide semiconductor field effect transistor are both single-type power chips 2. By setting at least one of the low-voltage power chip 21 and the high-voltage power chip 22 to a reverse conducting insulated gate bipolar transistor, or setting at least one of the low-voltage power chip 21 and the high-voltage power chip 22 to a metal-oxide semiconductor field effect transistor, the number of cores on the power module 100 can be reduced and the number of electrical connection wires can be reduced.

[0187] In Example 1, Example 2 or Example 3 of the present application, in combination with Figure 4, the low-voltage power chip 21 is an insulated gate bipolar transistor (IGBT) and a fast recovery diode (FRD) electrically connected to each other. The insulated gate bipolar transistor and the fast recovery diode are spaced apart in the first direction. The low-voltage driver chip 41 can be bonded to the fast recovery diode through the insulated gate bipolar transistor, and then bonded to the power side lead frame 32.

[0188] In Example 1, Example 2 or Example 3 of the present application, in combination with Figure 4, the high-voltage power chip 22 is an insulated gate bipolar transistor (IGBT) and a fast recovery diode (FRD) electrically connected to each other. The insulated gate bipolar transistor and the fast recovery diode are arranged at intervals in the first direction. The high-voltage driver chip 42 can be bonded to the fast recovery diode through the insulated gate bipolar transistor, and then bonded to the power side lead frame 32.

[0189] It should be noted that the insulated gate bipolar transistor and the fast recovery diode electrically connected to each other can form a discrete power chip 2.

[0190] In the above embodiments, the types of the low-voltage power chip 21 and the high-voltage power chip 22 can be selected according to the usage scenario of the power module 100 . The structure of the power module 100 is more diverse, and the power module 100 has more applicable scenarios.

[0191] Furthermore, as shown in Figures 9-12 , the power module 100 further includes a substrate 5, at least a portion of which is encapsulated within the plastic package 1, and a low-voltage power chip 21 and a high-voltage power chip 22 are disposed on the substrate 5. The substrate 5 is located between the control side 11 and the power side 12 of the plastic package 1. Thus, the substrate 5 can be used to support the low-voltage power chip 21 and the high-voltage power chip 22.

[0192] According to some embodiments of the first, second, or third embodiments of the present application, in conjunction with FIG5 , the substrate 5, the control-side lead frame 31, and the power-side lead frame 32 are constructed from an integral frame 3, and the substrate 5 is encapsulated in the plastic package 1. With this arrangement, on the one hand, the substrate 5, the control-side lead frame 31, and the power-side lead frame 32 are constructed as a whole, which facilitates the encapsulation of the integral frame 3 with other components, thereby improving the assembly efficiency of the power module 100. On the other hand, the overall structural strength of the substrate 5, the control-side lead frame 31, and the power-side lead frame 32 is improved, thereby extending the service life of the power module 100.

[0193] Furthermore, according to some embodiments of Example 1, Example 2, or Example 3 of the present application, in combination with Figure 6, the power module 100 may further include an insulating sheet 6 and a heat sink 7. The insulating sheet 6 is provided on the side of the substrate 5 facing away from the low-voltage power chip 21 and the high-voltage power chip 22, and the heat sink 7 is provided on the side of the insulating sheet 6 facing away from the substrate 5 and exposed from the plastic package 1. The insulating sheet 6 is located between the substrate 5 and the heat sink 7. Thus, by providing the insulating sheet 6 between the substrate 5 and the heat sink 7, the substrate 5 and the heat sink 7 are separated to avoid electrical connection between the substrate 5 and the heat sink 7. When the power chip 2 generates heat during operation, the heat can be transferred to the heat sink 7 through the substrate 5 and the insulating sheet 6. The heat sink 7 exchanges heat with the outside world to achieve heat dissipation of the power module 100. Optionally, the heat sink 7 can be a copper sheet. But it is not limited to this.

[0194] According to some embodiments of Example 1, Example 2 or Example 3 of the present application, in combination with Figure 7, the control-side lead frame 31 and the power-side lead frame 32 are constructed from an integrated frame 3, and the power-side lead frame 32 is connected to the substrate 5. The substrate 5 includes a conductive layer 53, an insulating layer 54 and a heat dissipation layer 55. The conductive layer 53 and the heat dissipation layer 55 are respectively arranged on both side surfaces of the insulating layer 54. The conductive layer 53 constructs a power pad 51, and the heat dissipation layer 55 is exposed from the plastic package 1 on a side away from the insulating layer 54. Specifically, the substrate 5 includes a conductive layer 53, an insulating layer 54 and a heat dissipation layer 55 arranged in the thickness direction. The conductive layer 53 constructs a power pad 51, and the power chip 2 and the power-side pin 321 can be connected to the conductive layer 53. The surface of the heat dissipation layer 55 on a side away from the insulating layer 54 is flush with the bottom surface of the plastic package 1 and is exposed outside the plastic package 1. When the power chip 2 generates heat during operation, the heat can be transferred to the heat dissipation layer 55 through the conductive layer 53 and the insulating layer 54. The heat dissipation layer 55 exchanges heat with the outside world to dissipate heat from the power module 100. The conductive layer 53 can be a copper layer, the insulating layer 54 can be a ceramic layer, and the heat dissipation layer 55 can be a copper layer.

[0195] According to the implementation scheme of Example 1, Example 2 or Example 3 of the present application, the control side lead frame 31 and the power side lead frame 32 are constructed by an integrated frame 3, and the power side lead frame 32 is connected to the substrate 5. The substrate 5 may include a conductive layer 53 and an insulating layer 54. The conductive layer 53 is provided on one side surface of the insulating layer 54. The conductive layer 53 constructs a power pad 51, and the side of the insulating layer 54 away from the conductive layer 53 is exposed from the plastic package 1. In this way, the power chip 2 and the power side pin 321 are both connected to the conductive layer 53, and the side surface of the insulating layer 54 away from the conductive layer 53 is flush with the bottom surface of the plastic package 1 and exposed outside the plastic package 1. When the power chip 2 generates heat during operation, the heat can be transferred to the insulating layer 54 through the conductive layer 53, and the insulating layer 54 performs heat exchange with the outside to achieve heat dissipation of the power module 100. Among them, the conductive layer 53 can be a copper layer, and the insulating layer 54 can be a ceramic layer.

[0196] Furthermore, the frame 3 can be made of copper or a copper alloy. The plastic package 1 can be made of epoxy resin. Thus, the plastic package 1 has a certain degree of compressive strength and insulation, which increases the structural strength of the plastic package 1 and extends the service life of the plastic package 1. The epoxy resin material can also provide physical and electrical protection, preventing the chip from being impacted by the external environment.

[0197] An embodiment of the present application further provides an electronic device (not shown), comprising a power module 100 according to any one of the above embodiments of the present application.

[0198] According to the electronic device of the embodiment of the present application, by adopting the power module 100 described in any of the above embodiments, it is not only beneficial to the heat dissipation and current flow of the electronic device, thereby improving the performance of the electronic device and extending the service life of the electronic device, but also improving the production efficiency of the electronic device and reducing the production cost.

[0199] Other structures and operations of the electronic device according to the embodiments of the present application are known to those skilled in the art and will not be described in detail here.

[0200] In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0201] Throughout this specification, reference to terms such as "one embodiment," "some embodiments," "illustrative embodiments," "example," "specific example," or "some examples" means that a specific feature, structure, material, or characteristic described in conjunction with the embodiment or example is included in at least one embodiment or example of the present application. In this specification, illustrative expressions of the above terms do not necessarily refer to the same embodiment or example.

[0202] Although the embodiments of the present application have been shown and described, those skilled in the art will appreciate that various changes, modifications, substitutions, and variations may be made to the embodiments without departing from the principles and intent of the present application, and that the scope of the present application is defined by the claims and their equivalents.

Claims

1. A power module (100), characterized in that: include: A plastic package body (1), wherein two opposite sides of the plastic package body (1) in a first direction are a control side (11) and a power side (12); A plurality of power chips (2), wherein the plurality of power chips (2) are arranged in the plastic package (1), and the plurality of power chips (2) include a low-voltage power chip (21) and a high-voltage power chip (22); A frame (3), the frame (3) comprising a control side lead frame (31) and a power side lead frame (32), the control side lead frame (31) having a low voltage driving pad (311), a high voltage driving pad (312) and a plurality of control side pins (313), the low voltage driving pad (311) being one, the high voltage driving pad (312) being one, the power side lead frame (32) having a plurality of power side pins (321), wherein the high voltage driving pad (312) and the low voltage driving pad (311) are spaced apart in a second direction; A plurality of drive chips (4), wherein the plurality of drive chips (4) include a low-voltage drive chip (41) and a high-voltage drive chip (42), wherein the low-voltage drive chip (41) is one, and the high-voltage drive chip (42) is one, wherein the low-voltage drive chip (41) is arranged on the low-voltage drive pad (311), and the high-voltage drive chip (42) is arranged on the high-voltage drive pad (312), and wherein the high-voltage drive chip (42) is integrated with a bootstrap boost module, wherein the low-voltage drive chip (41) and the low-voltage drive chip (42) are connected to each other. The power chip (21) is electrically connected, the high-voltage driver chip (42) is electrically connected to the high-voltage power chip (22), a plurality of control-side pins (313) are electrically connected to the low-voltage driver chip (41) and the high-voltage driver chip (42) and extend from the control side (11) to the plastic package (1), and a plurality of power-side pins (321) are electrically connected to the low-voltage power chip (21) and the high-voltage power chip (22) and extend from the power side (12) to the plastic package (1); The plurality of control side pins (313) include a high-side drive suspension power supply voltage pin (3131) and a high-side drive suspension power supply ground pin (3133), the high-side drive suspension power supply voltage pin (3131) and the high-side drive suspension power supply ground pin (3133) are both spaced apart from the high-voltage driver chip (42) in a first direction, the high-side drive suspension power supply voltage pin (3131) includes a first high-side drive suspension power supply voltage pin (31311), a second high-side drive suspension power supply voltage pin (31312) and a third high-side drive suspension power supply voltage pin (31313), the high-side drive suspension power supply ground pin (3133) includes a first high-side drive suspension power supply ground pin (31331), a second high-side drive suspension power supply ground pin (31332) and a third high-side drive suspension power supply ground pin (31333), the first high-side drive suspension power supply voltage pin (31311) and the second high-side drive suspension power supply ground pin (31312) are spaced apart from each other in a first direction, the ...3) and the third high-side drive suspension power supply voltage pin (31313) are spaced apart from each other in a first direction, the high-side drive suspension power supply ground pin (3133) and the first high-side drive suspension power supply voltage pin (31311) and the second high-side drive suspension power supply ground pin (31312) are spaced apart from each other in a first direction, the high-side drive suspension power supply ground pin (3133) and the third high-side drive suspension power supply ground pin (31333) are spaced apart from each other in a first direction, the high-side drive suspension power supply voltage 1311), the first high-side drive suspension power supply ground pin (31331), the second high-side drive suspension power supply voltage pin (31312), the second high-side drive suspension power supply ground pin (31332), the third high-side drive suspension power supply voltage pin (31313) and the third high-side drive suspension power supply ground pin (31333) are sequentially spaced apart on a side away from the low-voltage drive pad (311) in the second direction, and the first high-side drive suspension power supply voltage pin (31311), the second high-side drive suspension power supply voltage pin (31312), the third high-side drive suspension power supply voltage pin (31313), the first high-side drive suspension power supply ground pin (31331), the second high-side drive suspension power supply ground pin (31332) and the third high-side drive suspension power supply ground pin (31333) are electrically connected to the high-voltage driver chip (42) respectively; The first high-side drive suspension power supply voltage pin (31311), the second high-side drive suspension power supply voltage pin (31312), and the third high-side drive suspension power supply voltage pin (31313) are all reserved with a bootstrap pad (31314), and the plurality of control side pins (313) further include a high-side drive chip power supply voltage pin (3132), the high-side drive chip power supply voltage pin (3132) and the high-voltage drive pad (312) are spaced apart and extend along the periphery of the high-voltage drive pad (312), and the high-side drive chip power supply voltage pin (3132) and the high-voltage drive pad (312) are spaced apart from each other. The high-voltage driver chip (42) is electrically connected, at least part of the high-side driver chip power supply voltage pin (3132) is spaced between the high-voltage driver pad (312) and the plurality of high-side driver suspension power supply voltage pins (3131) in a first direction, and in a plane perpendicular to the thickness direction of the plastic package (1), the length of the orthographic projection of the control side lead frame (31) in the first direction is L1, and L1 satisfies: 5.4mm≤L1≤7mm, wherein the thickness direction of the plastic package (1) is set as the third direction, and the first direction, the second direction and the third direction are perpendicular to each other.

2. The power module (100) according to claim 1, characterized in that In a plane perpendicular to the thickness direction of the plastic package (1), the distances between the edges of the first high-side drive floating power supply voltage pin (31311), the second high-side drive floating power supply voltage pin (31312), and the third high-side drive floating power supply voltage pin (31313) facing away from the control side (11) and the orthographic projections of the edge of the control side (11) of the plastic package (1) are all equal and are all L2, and L2 satisfies: 2.4mm≤L2≤3.4mm.

3. The power module (100) according to claim 1, characterized in that In a plane perpendicular to the thickness direction of the plastic package body (1), the distance between the edge of the high-voltage driving pad (312) adjacent to the control side (11) and the orthographic projection of the edge of the high-voltage driving pad (312) facing away from the control side (11) is L3, and L3 satisfies the relationship: L3≤2.3mm.

4. The power module (100) according to claim 1, characterized in that Also includes: A substrate (5), at least a portion of the substrate (5) is encapsulated in the plastic package (1), a power pad (51) is provided on the substrate (5), the power pad (51) includes a low-voltage power pad (511) and a high-voltage power pad (512), there are three low-voltage power pads (511), the three low-voltage power pads (511) correspond to the low-voltage driving pad (311) in a first direction, and there is one high-voltage power pad (512) and the high-voltage driving pad (311) corresponds to the low-voltage driving pad (311) in a first direction. The driving pads (312) correspond to each other in a first direction, the three low-voltage power pads (511) and the one high-voltage power pad (512) are sequentially arranged at intervals in a second direction, there are three low-voltage power chips (21), and there are three high-voltage power chips (22), the three low-voltage power chips (21) are arranged on the three low-voltage power pads (511) in a one-to-one correspondence, and the three high-voltage power chips (22) are arranged on one high-voltage power pad (512).

5. The power module (100) according to claim 4, characterized in that At least one core-pulling pinhole (13) is formed on one side surface of the plastic package body (1) in the thickness direction, and the power pad (51) has two end corners (52) on the side adjacent to the control side (11), and the two end corners (52) are spaced apart in the second direction, and in a plane perpendicular to the thickness direction of the plastic package body (1), the orthographic projections of the vertices of the two end corners (52) respectively coincide with the orthographic projections of the centers of the two core-pulling pinholes (13); The three low-voltage power pads (511) are respectively a first low-voltage power pad (5111), a second low-voltage power pad (5112) and a third low-voltage power pad (5113), wherein the third low-voltage power pad (5113) is arranged adjacent to the high-voltage power pad (512) in the second direction, the first low-voltage power pad (5111) is arranged at intervals in the second direction on the side of the third low-voltage power pad (5113) away from the high-voltage power pad (512), the second low-voltage power pad (5112) is arranged at intervals between the first low-voltage power pad (5111) and the third low-voltage power pad (5113), and the size of the first low-voltage power pad (5111) in the second direction is larger than that of the second low-voltage power pad (5112) and the third low-voltage power pad (5113). 113) dimension in the second direction, one of the three high-voltage power chips (22) that is away from the third low-voltage power pad (5113) is the first high-voltage power chip (22), in a plane perpendicular to the thickness direction of the plastic package (1), the orthographic projection of the low-voltage power chip (21) on the first low-voltage power pad (5111) and the orthographic projection of the core-pulling pinhole (13) are spaced apart from each other, the orthographic projection of the first high-voltage power chip (221) and the orthographic projection of the core-pulling pinhole (13) are spaced apart from each other, and the distances between the edges of the multiple power chips (2) adjacent to the control side (11) and the orthographic projections of the edges of the power pad (51) adjacent to the control side (11) are all equal and are L4, and the L4 satisfies the relationship: 0.7mm≤L4≤0.9mm.

6. The power module (100) according to claim 5, characterized in that In a plane perpendicular to the thickness direction of the plastic package (1), a distance between an edge of the first low-voltage power pad (5111) on a side away from the second low-voltage power pad (5112) in the second direction and an orthographic projection of an edge of the low-voltage power chip (21) on the first low-voltage power pad (5111) on a side away from the second low-voltage power pad (5112) in the second direction is L5, and L5 satisfies the relationship: 0.8mm≤L5≤1.2mm.

7. The power module (100) according to claim 5, characterized in that In a plane perpendicular to the thickness direction of the plastic package (1), the distance between the edge of the high-voltage power pad (512) on the side away from the third low-voltage power pad (5113) in the second direction and the orthographic projection of the edge of the first high-voltage power chip (22) on the side away from the third low-voltage power pad (5113) in the second direction is L6, and L6 satisfies the relationship: 0.8mm≤L6≤1.2mm.

8. The power module (100) according to claim 1, characterized in that The dimension of the plastic package body (1) in the first direction is L7, and L7 satisfies the relationship: 18mm≤L7≤20mm.

9. A power module (100), characterized in that: include: A plastic package body (1), wherein two opposite sides of the plastic package body (1) in a first direction are a control side (11) and a power side (12); A plurality of power chips (2), wherein the plurality of power chips (2) are arranged in the plastic package (1), and the plurality of power chips (2) include a low-voltage power chip (21) and a high-voltage power chip (22); A frame (3), the frame (3) comprising a control side lead frame (31) and a power side lead frame (32), the control side lead frame (31) having a low voltage driving pad (311), a high voltage driving pad (312) and a plurality of control side pins (313), the low voltage driving pad (311) being one, the high voltage driving pad (312) being one, the power side lead frame (32) having a plurality of power side pins (321), wherein the high voltage driving pad (312) and the low voltage driving pad (311) are spaced apart in a second direction; A plurality of drive chips (4), wherein the plurality of drive chips (4) include a low-voltage drive chip (41) and a high-voltage drive chip (42), wherein the low-voltage drive chip (41) is one, and the high-voltage drive chip (42) is one, wherein the low-voltage drive chip (41) is arranged on the low-voltage drive pad (311), and the high-voltage drive chip (42) is arranged on the high-voltage drive pad (312), and wherein the high-voltage drive chip (42) is integrated with a bootstrap boost module, wherein the low-voltage drive chip (41) and the low-voltage drive chip (42) are connected to each other. The power chip (21) is electrically connected, the high-voltage driver chip (42) is electrically connected to the high-voltage power chip (22), a plurality of control-side pins (313) are electrically connected to the low-voltage driver chip (41) and the high-voltage driver chip (42) and extend from the control side (11) to the plastic package (1), and a plurality of power-side pins (321) are electrically connected to the low-voltage power chip (21) and the high-voltage power chip (22) and extend from the power side (12) to the plastic package (1); The plurality of control side pins (313) include a high-side drive suspension power supply voltage pin (3131) and a high-side drive suspension power supply ground pin (3133), the high-side drive suspension power supply voltage pin (3131) and the high-side drive suspension power supply ground pin (3133) are both spaced apart from the high-voltage driver chip (42) in a first direction, the high-side drive suspension power supply voltage pin (3131) includes a first high-side drive suspension power supply voltage pin (31311), a second high-side drive suspension power supply voltage pin (31312) and a third high-side drive suspension power supply voltage pin (31313), the high-side drive suspension power supply ground pin (3133) includes a first high-side drive suspension power supply ground pin (31331), a second high-side drive suspension power supply ground pin (31332) and a third high-side drive suspension power supply ground pin (31333), the first high-side drive suspension power supply voltage pin (31311) and the second high-side drive suspension power supply ground pin (31312) are spaced apart from each other in a first direction, the ...3) and the third high-side drive suspension power supply voltage pin (31313) are spaced apart from each other in a first direction, the high-side drive suspension power supply ground pin (3133) and the first high-side drive suspension power supply voltage pin (31311) and the second high-side drive suspension power supply ground pin (31312) are spaced apart from each other in a first direction, the high-side drive suspension power supply ground pin (3133) and the third high-side drive suspension power supply ground pin (31333) are spaced apart from each other in a first direction, the high-side drive suspension power supply voltage 1311), the first high-side drive suspension power supply ground pin (31331), the second high-side drive suspension power supply voltage pin (31312), the second high-side drive suspension power supply ground pin (31332), the third high-side drive suspension power supply voltage pin (31313) and the third high-side drive suspension power supply ground pin (31333) are sequentially spaced apart on a side away from the low-voltage drive pad (311) in the second direction, and the first high-side drive suspension power supply voltage pin (31311), the second high-side drive suspension power supply voltage pin (31312), the third high-side drive suspension power supply voltage pin (31313), the first high-side drive suspension power supply ground pin (31331), the second high-side drive suspension power supply ground pin (31332) and the third high-side drive suspension power supply ground pin (31333) are electrically connected to the high-voltage driver chip (42) respectively; No bootstrap pad is reserved on the first high-side drive floating power supply voltage pin (31311), the second high-side drive floating power supply voltage pin (31312) and the third high-side drive floating power supply voltage pin (31313); the plurality of control-side pins (313) further include a high-side drive chip power supply voltage pin (3132); the high-side drive chip power supply voltage pin (3132) is spaced between the high-voltage drive pad (312) and the low-voltage drive pad (311) in the second direction; the high-side drive chip power supply voltage pin (3132) is electrically connected to the high-voltage drive chip (42); in a plane perpendicular to the thickness direction of the plastic package (1), the length of the orthographic projection of the control-side lead frame (31) in the first direction is L1, and L1 satisfies the following: 3.7 mm ≤ L1 ≤ 5.3 mm; wherein, the thickness direction of the plastic package (1) is set as the third direction, and the first direction, the second direction and the third direction are perpendicular to each other.

10. The power module (100) according to claim 9, characterized in that In a plane perpendicular to the thickness direction of the plastic package body (1), the distance between the edge of the high-voltage driving pad (312) adjacent to the control side (11) and the orthographic projection of the edge of the high-voltage driving pad (312) facing away from the control side (11) is L8, and L8 satisfies the relationship: 2.3mm≤L8≤3.1mm.

11. The power module (100) according to claim 9, characterized in that Also includes: A substrate (5), at least a portion of which is encapsulated in the plastic package (1), the power chip (2) being arranged on the substrate (5), and a length L9 of an orthographic projection of the substrate (5) in a first direction in a plane perpendicular to the thickness direction of the plastic package (1), wherein L9 satisfies the relationship: 9.5 mm ≤ L9 ≤ 10.5 mm.

12. The power module (100) according to claim 11, characterized in that A power pad (51) is provided on the substrate (5), and the power pad (51) includes a low-voltage power pad (511) and a high-voltage power pad (512). There are three low-voltage power pads (511) and one high-voltage power pad (512). The three low-voltage power pads (511) and the one high-voltage driving pad (312) are sequentially spaced in the second direction. The plurality of power chips (2) include three low-voltage power chips (21) and three high-voltage power chips (22). The three low-voltage power chips (21) are respectively arranged on the three low-voltage power pads (511) in a one-to-one correspondence and are all electrically connected to the low-voltage driving chip (41). The three high-voltage power chips (22) are all arranged on one high-voltage power pad (512) and are all electrically connected to the high-voltage driving chip (42).

13. The power module (100) according to claim 9, characterized in that The dimension of the plastic package body (1) in the first direction is L7, and L7 satisfies the relationship: 18mm≤L7≤20mm.

14. A power module (100), characterized in that: include: A plastic package body (1), wherein two opposite sides of the plastic package body (1) in a first direction are a control side (11) and a power side (12); A plurality of power chips (2), wherein the plurality of power chips (2) are arranged in the plastic package (1), and the plurality of power chips (2) include a low-voltage power chip (21) and a high-voltage power chip (22); A frame (3), the frame (3) comprising a control side lead frame (31) and a power side lead frame (32), the control side lead frame (31) having a low voltage driving pad (311), a high voltage driving pad (312) and a plurality of control side pins (313), the power side lead frame (32) having a plurality of power side pins (321), wherein the high voltage driving pad (312) and the low voltage driving pad (311) are spaced apart in a second direction; A plurality of drive chips (4), wherein the plurality of drive chips (4) include a low-voltage drive chip (41) and a high-voltage drive chip (42), wherein the low-voltage drive chip (41) is arranged on the low-voltage drive pad (311), and the high-voltage drive chip (42) is arranged on the high-voltage drive pad (312), and the high-voltage drive chip (42) is integrated with a bootstrap boost module, wherein the low-voltage drive chip (41) is electrically connected to the low-voltage power chip (21), and the high-voltage drive chip (42) is electrically connected to the high-voltage power chip (22), wherein the plurality of control-side pins (313) are electrically connected to the low-voltage drive chip (41) and the high-voltage drive chip (42) and extend from the control side (11) to the plastic package (1), and wherein the plurality of power-side pins (321) are electrically connected to the low-voltage power chip (21) and the high-voltage power chip (22) and extend from the power side (12) to the plastic package (1); The plurality of control side pins (313) include a high-side drive suspension power supply voltage pin (3131) and a high-side drive suspension power supply ground pin (3133), the high-side drive suspension power supply voltage pin (3131) and the high-side drive suspension power supply ground pin (3133) are both spaced apart from the high-voltage driver chip (42) in a first direction, the high-side drive suspension power supply voltage pin (3131) includes a first high-side drive suspension power supply voltage pin (31311), a second high-side drive suspension power supply voltage pin (31312) and a third high-side drive suspension power supply voltage pin (31313), the high-side drive suspension power supply ground pin (3133) includes a first high-side drive suspension power supply ground pin (31331), a second high-side drive suspension power supply ground pin (31332) and a third high-side drive suspension power supply ground pin (31333), the first high-side drive suspension power supply voltage pin (31311) and the second high-side drive suspension power supply ground pin (31312) are spaced apart from each other in a first direction, the ...3) and the third high-side drive suspension power supply voltage pin (31313) are spaced apart from each other in a first direction, the high-side drive suspension power supply ground pin (3133) and the first high-side drive suspension power supply voltage pin (31311) and the second high-side drive suspension power supply ground pin (31312) are spaced apart from each other in a first direction, the high-side drive suspension power supply ground pin (3133) and the third high-side drive suspension power supply ground pin (31333) are spaced apart from each other in a first direction, the high-side drive suspension power supply voltage 1311), the first high-side drive suspension power supply ground pin (31331), the second high-side drive suspension power supply voltage pin (31312), the second high-side drive suspension power supply ground pin (31332), the third high-side drive suspension power supply voltage pin (31313) and the third high-side drive suspension power supply ground pin (31333) are sequentially spaced apart on a side away from the low-voltage drive pad (311) in the second direction, and the first high-side drive suspension power supply voltage pin (31311), the second high-side drive suspension power supply voltage pin (31312), the third high-side drive suspension power supply voltage pin (31313), the first high-side drive suspension power supply ground pin (31331), the second high-side drive suspension power supply ground pin (31332) and the third high-side drive suspension power supply ground pin (31333) are electrically connected to the high-voltage driver chip (42) respectively; The plurality of control side pins (313) further include a high-side driver chip power supply voltage pin (3132) and a first support pin (3134), wherein the high-side driver chip power supply voltage pin (3132) is spaced between the high-voltage driver pad (312) and the low-voltage driver pad (311) in the second direction and is electrically connected to the high-voltage driver chip (42), and the two sides of the plastic package (1) in the first direction are respectively a first long side (13) and a second long side (14), the control side (11) is located at the first long side (13), the power side (12) is located at the second long side (14), and the two sides of the plastic package (1) in the second direction are respectively a first short side (15) and a second short side (15). Two short sides (16), compared to the second short side (16), the first short side (15) is adjacent to the high-voltage drive pad (312), the third high-side drive suspension power supply ground pin (31333) is led outward from the first long side (13), the first support pin (3134) is located on the side of the third high-side drive suspension power supply ground pin (31333) that is away from the third high-side drive suspension power supply voltage pin (31313) in the second direction and is exposed outward from the first short side (15), the first support pin (3134) is connected to the third high-side drive suspension power supply ground pin (31333), wherein the first direction and the second direction are perpendicular to each other.

15. The power module (100) according to claim 14, characterized in that The third high-side drive suspension power supply ground pin (31333) comprises a first pin portion (313331) and a second pin portion (313332), wherein the second pin portion (313332) is arranged on a side of the first pin portion (313331) facing the third high-side drive suspension power supply voltage pin (31313), and the second pin portion (313332) is electrically connected to the high-voltage driver chip (42). The first supporting pin (3134) is connected to a side of the first pin portion (313331) facing away from the second pin portion (313332), and the first supporting pin (3134) and the second pin portion (313332) are spaced apart in the second direction. Compared with the second pin portion (313332), the first supporting pin (3134) is adjacent to the first long side (13).

16. The power module (100) according to claim 15, characterized in that A second supporting pin (3121) is provided on a side of the high-voltage driving pad (312) in the second direction away from the low-voltage driving pad (311), and the second supporting pin (3121) includes a first supporting pin portion (31211) and a second supporting pin portion (31212), the first supporting pin portion (31211) is connected to the high-voltage driving pad (312), the second supporting pin portion (31212) is connected to a side of the first supporting pin portion (31211) away from the high-voltage driving pad (312) and is exposed outward from the first short side (15), and the second supporting pin portion (31212) and the first supporting pin (3134) are spaced apart in the first direction.

17. The power module (100) according to claim 14, characterized in that In a plane perpendicular to the thickness direction of the plastic package body (1), the distance between the edge of the high-voltage driving pad (312) adjacent to the control side (11) and the orthographic projection of the edge of the high-voltage driving pad (312) facing away from the control side (11) is L8, and L8 satisfies the relationship: 2.3mm≤L8≤3.1mm.

18. The power module (100) according to claim 14, characterized in that Also includes: A substrate (5), at least a portion of which is encapsulated in the plastic package (1), the power chip (2) being arranged on the substrate (5), and a length L9 of an orthographic projection of the substrate (5) in a first direction in a plane perpendicular to the thickness direction of the plastic package (1), wherein L9 satisfies the relationship: 9.5≤L9≤10.5mm.

19. The power module according to claim 14, wherein: The dimension of the plastic package body (1) in the first direction is L7, and L7 satisfies the relationship: 18mm≤L7≤20mm.

20. The power module (100) according to any one of claims 1 to 19, characterized in that: At least one of the low-voltage power chip (21) and the high-voltage power chip (22) is a reverse-conducting insulated gate bipolar transistor; or at least one of the low-voltage power chip (21) and the high-voltage power chip (22) is a metal-oxide semiconductor field-effect transistor; or the low-voltage power chip (21) is an insulated gate bipolar transistor and a fast recovery diode electrically connected to each other; or the high-voltage power chip (22) is an insulated gate bipolar transistor and a fast recovery diode electrically connected to each other.

21. The power module (100) according to claim 20, characterized in that Also includes: A substrate (5), at least a portion of the substrate (5) is encapsulated in the plastic package (1), a power pad (51) is provided on the substrate (5), the power chip (2) is provided on the power pad (51), and the power pad (51) is electrically connected to the power-side pin (321).

22. The power module (100) according to claim 21, characterized in that The substrate (5), the control-side lead frame (31), and the power-side lead frame (32) are constructed from an integrated frame (3), and the substrate (5) is encapsulated in the plastic package (1).

23. The power module (100) according to claim 22, characterized in that Also includes: An insulating sheet (6), the insulating sheet (6) being provided on a side of the substrate (5) facing away from the low-voltage power chip (21) and the high-voltage power chip (22); and a heat sink (7), the heat sink (7) being provided on a side of the insulating sheet (6) facing away from the substrate (5) and exposed from the plastic package (1).

24. The power module (100) according to claim 21, characterized in that The control side lead frame (31) and the power side lead frame (32) are constructed from an integrated frame (3); the power side lead frame (32) is connected to the substrate (5); the substrate (5) comprises a conductive layer (53), an insulating layer (54) and a heat dissipation layer (55); the conductive layer (53) and the heat dissipation layer (55) are respectively arranged on both side surfaces of the insulating layer (54); the conductive layer (53) constructs the power pad (51); and the heat dissipation layer (55) is exposed from the plastic package (1) on a side away from the insulating layer (54).

25. The power module (100) according to claim 21, characterized in that The control-side lead frame (31) and the power-side lead frame (32) are constructed from an integrated frame (3); the power-side lead frame (32) is connected to the substrate (5); the substrate (5) comprises a conductive layer (53) and an insulating layer (54); the conductive layer (53) is arranged on a side surface of the insulating layer (54); the conductive layer (53) constructs the power pad (51); and the side of the insulating layer (54) away from the conductive layer (53) is exposed from the plastic package (1).

26. An electronic device, characterized in that: include: The power module (100) according to any one of claims 1 to 35.

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