Processing assembly and method

Abstract

According to various embodiments, a processing assembly (100) can have: a processing chamber (802); a first transport system (110) for transporting a first substrate along a first transport path (110t) in the processing chamber (802); a second transport system (112) for transporting a second substrate along a second transport path (112t) in the processing chamber (802), said second transport path running next to the first transport path (110t), preferably parallel thereto; and a radiation source (102) that is provided between the first transport path (110t) and the second transport path (110t) and is designed to generate electromagnetic radiation to which the first transport path (110t) and the second transport path (110t) are exposed.

Description

[0001] Description

[0002] Processing arrangement and procedure

[0003] Various embodiments relate to a processing arrangement and a method.

[0004] In general, a substrate, such as a glass substrate, a wafer, a metal substrate, and / or a polymer substrate, can be treated (processed), e.g., coated, so that the chemical and / or physical properties of the substrate can be modified. To coat a substrate, vapor deposition, as an established coating method, can be performed; for example, the substrate can be heated.

[0005] According to various embodiments, it has been recognized that various processes for heating the substrate are inefficient and / or require increased costs due to complex implementation. Among other things, it has been recognized that conventional concepts for heating a substrate clearly dissipate unnecessarily large amounts of thermal energy unused, which increases energy costs and / or complicates the design because many other components are subject to thermal stress. As a result, the transport distance required to heat the substrate becomes unnecessarily long, as the rate of heating and / or the parallel coating of the substrate is subject to technical limitations.

[0006] Against this background, a processing arrangement and a method are provided which address these aspects and, among other things, increase energy efficiency, increase the service life of the components, reduce their complexity, and reduce the required installation space, which contributes to reducing costs.

[0007] Example 1 is a processing arrangement comprising: a processing chamber (e.g. a negative pressure chamber, e.g. vacuum chamber, or positive pressure chamber), a first transport system for transporting a first substrate along a first transport path in the processing chamber; a second transport system for transporting a second substrate along a second transport path in the processing chamber, which runs next to the first transport path, preferably parallel thereto; a radiation source and / or a switching region, which is arranged between the first transport path and the second transport path and is configured to generate and / or switch electromagnetic radiation to which the first transport path and the second transport path are exposed.

[0008] Clearly, the two adjacent transport paths allow the electromagnetic radiation transmitted and / or generated between them to be utilized more efficiently and / or at least more substrates to be heated along the length of the radiation source. For example, the utilization of the heat introduced into the process chamber can be improved and / or the length of the process chamber can be kept as short as possible (or productivity can be increased with the same chamber length).

[0009] Example 2 is a processing arrangement according to Example 1, wherein the radiation source has a first (e.g. thermal) emission surface which is configured to emit the electromagnetic radiation towards the first transport path; and / or wherein the radiation source has a (e.g. thermal) second emission surface which is configured to emit the electromagnetic radiation towards the second transport path. The emission surface can, for example, be configured to emit infrared radiation. The emission surface can, for example, be a surface of an electromagnetic coil and / or a surface of a ceramic heater. This simplifies the generation of the electromagnetic radiation and thus simplifies the heating of substrates.

[0010] Example 3 is a processing arrangement according to example 1 or 2, wherein the first transport path is arranged in a first cavity of the processing chamber, wherein the first cavity is adjacent to the radiation source, preferably adjacent to the first emission surface; and / or wherein the second transport path is arranged in a second cavity of the processing chamber, wherein the second cavity is adjacent to the radiation source, preferably adjacent to the second emission surface. This improves the propagation of the electromagnetic radiation and thus simplifies the heating of substrates.

[0011] Example 4 is a processing arrangement according to one of Examples 1 to 3, wherein the first transport system comprises a first row of several transport rollers arranged one behind the other along a transport direction (e.g. rotatably mounted) for providing the first transport path; and / or wherein the second transport system comprises a second row of several transport rollers arranged one behind the other along the transport direction for providing the second transport path; wherein preferably the first transport path and / or the second transport path are parallel to the transport direction. This simplifies the structure of the transport systems and thus reduces the costs. It can be understood that the first transport system and / or the second transport system (e.g.alternatively or in addition to transport rollers) have one or more than one magnetic rail and / or one or more than one air cushion transport system and / or one or more than one chain or belt conveyor system for transport.

[0012] Example 5 is a processing arrangement according to any one of Examples 1 to 4, further comprising: a substrate carrier configured to be transported in a first configuration by means of the first transport system along the first transport path, and in a second configuration by means of the second transport system along the second transport path. This simplifies the design of the transport systems and thus reduces costs.

[0013] Example 6 is a processing arrangement according to one of examples 1 to 5, wherein the substrate carrier is configured, preferably in the first configuration and / or in the second configuration, to hold a substrate on a side facing away from the radiation source. This simplifies the structure of the transport systems and thus reduces costs. Example 7 is a processing arrangement according to one of examples 1 to 6, wherein the radiation source is configured to generate the electromagnetic radiation using electrical power, wherein preferably more than 50% (e.g., 75%, 90%) of the power is converted into the electromagnetic radiation. This improves the generation of the electromagnetic radiation and thus reduces costs.

[0014] Example 8 is a processing arrangement according to any one of Examples 1 to 7, wherein the electromagnetic radiation comprises infrared radiation and / or is generated inductively. This simplifies the generation of the electromagnetic radiation and thus reduces costs.

[0015] Example 9 is a processing arrangement according to any one of examples 1 to 8, wherein the radiation source is configured to supply thermal energy to a first substrate transported along the first transport path and to a second substrate transported along the second transport path by means of the electromagnetic radiation.

[0016] Example 10 is a processing arrangement according to any one of Examples 1 to 9, further comprising: a first coating device and a second coating process, between which the first transport path and the second transport path are arranged; wherein the first coating device is preferably configured to provide a first coating material to which the first transport path is exposed; wherein the second coating device is preferably configured to provide a second coating material to which the second transport path is exposed.

[0017] Example 11 is a processing arrangement according to Example 10, wherein the first coating device is configured to perform a (e.g., chemical or physical) vapor deposition using the first coating material; and / or wherein the second coating device is configured to perform a (e.g., chemical or physical) vapor deposition using the second coating material.

[0018] Example 12 is a processing arrangement according to any one of Examples 1 to 11, further comprising: one or more than one additional processing chamber, through which the first transport path and the second transport path run and / or which are fluidly coupled to the processing chamber, and of which: one or more than one first processing chamber is configured as a lock chamber for transferring a substrate between two regions which differ from one another (e.g. pressure or chemical composition); and / or one or more than one second processing chamber is configured as a temperature control chamber, in which a temperature control device is arranged and fewer coating devices are arranged than in the processing chamber, wherein preferably the temperature control device is configured to extract and / or supply thermal energy.

[0019] Example 13 is a method, preferably for operating a processing arrangement according to one of Examples 1 to 12, the method comprising: transporting a first substrate along a first transport path in a processing chamber (e.g. which is exposed to a vacuum or an overpressure); transporting a second substrate along a second transport path, which runs alongside the first transport path, in the processing chamber (e.g. which is exposed to the vacuum or the overpressure), preferably during the transport of the first substrate, generating electromagnetic radiation, to which the first substrate (or at least the first transport path) and the second substrate (or at least the second transport path) are exposed, by means of a radiation source which is arranged between the first transport path and the second transport path.Optionally, the method may comprise the components (process components or device components) corresponding to the processing arrangement according to one of Examples 1 to 12.

[0020] Example 14 is configured according to any one of Examples 1 to 13, wherein the radiation source comprises one or more than one heating device configured to generate the electromagnetic radiation.

[0021] Example 15 is configured according to any one of Examples 1 to 14, wherein thermal energy is supplied to the substrate by means of the electromagnetic radiation.

[0022] Example 16 is configured according to any one of Examples 1 to 15, wherein the radiation source is configured to emit the electromagnetic radiation to opposite sides of the radiation source.

[0023] Example 17 is configured according to any one of Examples 1 to 16, wherein the radiation source comprises one or more than one electromagnetic coil.

[0024] Example 18 is configured according to any one of Examples 1 to 17, wherein the radiation source comprises one or more infrared radiation sources.

[0025] Example 19 is configured according to any one of examples 1 to 18, wherein the first transport system and the second transport system are provided by means of one or more than one row of a plurality of transport rollers arranged one behind the other along a transport direction.

[0026] Example 20 is configured according to any one of examples 1 to 19, wherein the first transport path and / or the second transport path run parallel to each other.

[0027] Example 21 is configured according to any one of Examples 1 to 20, wherein the radiation source is arranged at a first distance from the first transport path and at a second distance from the second transport path, wherein the first distance and the second distance are substantially equal, ie, differing by less than 10% (e.g., 5% or 1%). This allows for a uniform distribution of the power of the electromagnetic radiation across both transport paths.

[0028] Example 22 is configured according to any one of Examples 1 to 21, wherein the first transport path and / or the second transport path are rectilinear. Example 23 is configured according to any one of Examples 1 to 22, using a radiation source to generate electromagnetic radiation to which a first transport path and a second transport path are exposed, which extend adjacent to each other (e.g., in a vacuum).

[0029] Example 24 is configured according to any one of Examples 1 to 23, wherein the first transport path and / or the second transport path are transverse to a rotation axis of one or more than one transport roller by means of which the first transport system and / or the second transport system is provided.

[0030] Example 25 is configured according to any one of Examples 1 to 24 and further configured according to any one of the appended claims.

[0031] Example 26 is configured according to any one of examples 1 to 25, wherein the first transport path and the second transport path are exposed to the same pressure, which in operation is, for example, an overpressure, an atmospheric pressure, or a negative pressure (e.g., vacuum), and / or are exposed to the same coating material.

[0032] Example 27 is configured according to any one of Examples 1 to 26, wherein the first substrate and the second substrate are exposed to the same pressure, which during operation (then also referred to as process pressure), for example, is an overpressure, an atmospheric pressure or a negative pressure (e.g., vacuum), and / or are exposed to the same coating material.

[0033] Example 28 is configured according to any one of examples 1 to 27, wherein the first transport system and the second transport system are exposed to the same pressure, which in operation is, for example, an overpressure, an atmospheric pressure, or a negative pressure (e.g., vacuum).

[0034] Example 29 is configured according to any one of examples 1 to 28, further comprising: one or more than one pump (e.g., comprising a vacuum pump) coupled to the processing chamber, for example, such that gas can be removed from the processing chamber by means of the one or more than one pump.

[0035] Example 30 is configured according to any one of examples 1 to 29, further comprising: a control device configured to control and / or regulate a pressure inside the processing chamber, for example according to a specification (e.g., a target pressure) and / or based on a sensor configured to detect the pressure (e.g., as actual pressure).

[0036] Example 31 is configured according to any one of Examples 1 to 30, further comprising: a control device configured to control and / or regulate an electrical power supplied to the radiation source, for example according to a specification (e.g., a target power) and / or based on a sensor configured to detect a temperature influenced by the radiation source (e.g., in the processing chamber and / or a substrate). Example 32 is configured according to any one of Examples 1 to 31, wherein the processing chamber is configured as a negative pressure chamber, e.g., as a vacuum chamber, or as a positive pressure chamber.

[0037] Example 33 is configured according to any one of Examples 1 to 32, wherein the first transport system comprises a storage device providing one or more than one first axis of rotation that is transverse to the first transport path; and / or wherein the second transport system comprises a storage device providing one or more than one second axis of rotation that is transverse to the second transport path.

[0038] Example 34 is configured according to any one of Examples 1 to 33, wherein the first transport system is configured to transport the first substrate in a vertical orientation (e.g., upright or hanging); and / or wherein the second transport system is configured to transport the second substrate in a vertical orientation (e.g., upright or hanging). The vertical orientation may include the substrate and the direction of gravity forming an acute angle, e.g., 10° or less.

[0039] Example 35 is configured according to any one of examples 1 to 34, wherein the first transport system is configured to transport the (e.g., first) substrate carrier in a vertical orientation (e.g., standing or hanging); and / or wherein the second transport system is configured to transport the substrate carrier (or a second substrate carrier) in a vertical orientation (e.g., standing or hanging). The vertical orientation may include the substrate and the direction of gravity forming an acute angle, e.g., 10° or less.

[0040] Example 36 is configured according to any one of examples 1 to 35, wherein the radiation source is configured to generate the electromagnetic radiation resistively.

[0041] Example 37 is configured according to any one of Examples 1 to 36, wherein the thermal energy is generated in the transported material (e.g. substrate and / or substrate carrier) itself.

[0042] Example 38 is configured according to any one of examples 1 to 37, wherein the radiation source is configured to convert the electromagnetic radiation in the transported material (e.g. substrate and / or substrate carrier) into thermal energy by means of induction.

[0043] Example 39 is configured according to any one of Examples 1 to 38, wherein the substrate carrier is configured to conductively supply thermal energy to the substrate and / or to absorb the electromagnetic radiation.

[0044] Example 40 is configured according to any one of Examples 1 to 39, wherein the first substrate transported along the first transport path is transported by means of a first substrate carrier (e.g., on a side of the first substrate carrier facing away from the second transport path), which is arranged between the first transport path and the second transport path. Example 41 is configured according to any one of Examples 1 to 40, wherein the second substrate transported along the second transport path is transported by means of a second substrate carrier (e.g., on a side of the second substrate carrier facing away from the first transport path), which is arranged between the first transport path and the second transport path.

[0045] Example 42 is configured according to any one of Examples 1 to 41, wherein the first transport path and the second transport path differ from each other in their distance from the radiation source.

[0046] Example 43 is configured according to any one of examples 1 to 42, further comprising an electrical connection configured, for example, to supply the radiation source with electrical power and / or to provide electrical power by means of which the electromagnetic radiation is generated.

[0047] Example 44 is configured according to any one of Examples 1 to 43, wherein the switching region is arranged between the first transport path and the second transport path and is configured to switch the electromagnetic radiation to which the first transport path and the second transport path are exposed.

[0048] Example 45 is configured according to any one of examples 1 to 44, wherein the radiation source (or at least its heating device) is arranged in the radiation region and / or is configured to convert electrical power absorbed by the electrical connection into the electromagnetic radiation.

[0049] Example 46 is configured according to any one of Examples 1 to 45, wherein the substrate carrier is configured to receive (e.g., carry) the substrate such that it is conductively coupled thereto.

[0050] Example 47 is configured according to any one of Examples 1 to 46, wherein the processing chamber (e.g., a negative pressure chamber, e.g., vacuum chamber, or positive pressure chamber) has an interior space providing (e.g., having) the switching region.

[0051] Example 48 is configured according to any one of Examples 1 to 47, wherein the first cavity is adjacent to the first coating device and / or the second cavity is adjacent to the second coating device.

[0052] Example 49 is configured according to any one of Examples 1 to 48, further comprising: a plurality of (e.g., identically constructed) substrate carriers, each substrate carrier being configured to be transported selectively by means of the first transport system or the second transport system. Example 50 is configured according to any one of Examples 1 to 49, wherein the first cavity and the second cavity are configured to exchange thermal radiation with one another and / or are at least thermally coupled with one another.

[0053] It shows

[0054] Figures 1, 2, 3A and B each show a processing arrangement according to various embodiments in different schematic views;

[0055] Figure 4 shows a method according to various embodiments; and

[0056] Figures 5A and B each show a processing arrangement according to various embodiments in different schematic views along the transport direction.

[0057] In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional terminology such as "top," "bottom," "front," "back," "fore," "rear," etc., will be used with reference to the orientation of the described figure(s). Since components of embodiments can be positioned in a number of different orientations, the directional terminology is for purposes of illustration and is in no way limiting. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention.It is understood that the features of the various exemplary embodiments described herein may be combined with one another unless specifically stated otherwise. The following detailed description is therefore not to be construed in a limiting sense, and the scope of the present invention is defined by the appended claims.

[0058] Throughout this description, the terms "connected," "attached," and "coupled" are used to describe both a direct and an indirect connection (e.g., resistive and / or electrically conductive, e.g., an electrically conductive connection), a direct or indirect connection, and a direct or indirect coupling. In the figures, identical or similar elements are provided with identical reference numerals where appropriate.

[0059] According to various embodiments, the term "coupled" or "coupling" can be understood in the sense of a (e.g., mechanical, hydrostatic, thermal, and / or electrical), e.g., direct or indirect, connection and / or interaction. For example, several elements can be coupled to one another along an interaction chain, along which the interaction can be exchanged, e.g., a fluid (then also referred to as fluidically coupled). For example, two coupled elements can exchange an interaction with one another, e.g., a mechanical, hydrostatic, thermal, and / or electrical interaction. A coupling of several vacuum components (e.g., valves, pumps, chambers, etc.) to one another can include fluidically coupling them. According to various embodiments, "coupled" can be understood in the sense of a mechanical (e.g., physical) coupling, e.g.,by means of direct physical contact. A clutch can be configured to transmit a mechanical interaction (e.g., force, torque, etc.).

[0060] The term "system" can be understood as a set of interacting entities. The set of interacting entities may, for example, include or be formed from at least one mechanical component, at least one electromechanical transducer (or other types of actuators), at least one electrical component, at least one instruction (e.g., encoded in a storage medium), and / or at least one control device.

[0061] A transport system can be understood as a set of interacting components, examples of which include: transport rollers, a bearing device (by means of which, for example, each transport roller is rotatably mounted), a coupling device, a drive train, a transmission, a drive device, etc. A transport system can, for example, be configured to transport a transported item (e.g., a substrate and, ideally, a substrate carrier), e.g., by means of the transport rollers. A transport device comprises, for example, the transport system and preferably the substrate carrier.

[0062] According to various embodiments, a bearing device can be configured for supporting (e.g., guided positioning and / or holding) one or more than one component. For example, the bearing device can have one or more than one bearing for supporting (e.g., guided positioning and / or holding) the component, for example per component. Each bearing of the loading device can be configured to provide the component with one or more than one degree of freedom (e.g., translational degree of freedom or rotational degree of freedom), according to which the component can be moved. Examples of a bearing include: radial bearings, axial bearings, radial axial bearings, linear bearings (also referred to as linear guides). For example, exactly one translational degree of freedom can be provided to the component per linear bearing.

[0063] The term coating device refers herein to a device that is configured to carry out a layer-forming process (also referred to as a coating process) and can, for example, have a so-called material source. According to various embodiments, the coating device can be configured to coat at least one substrate (i.e., one substrate or multiple substrates), which is, for example, transported through a coating region. For example, the coating device can be configured to provide a gaseous coating material (material vapor) and / or liquid coating material, which can, for example, be deposited on the at least one substrate to form a layer.Examples of components of a coating device include: a sputtering target as a material source, a plasma source, a crucible as a material source for thermally evaporating the coating material (e.g., by means of a laser, arc, electron beam, and / or conductively applied heat), a precursor source as a material source, and / or a liquid-phase atomizer as a material source. A sputtering device can be configured to atomize the sputtering target using a plasma.

[0064] With regard to the layer-forming process, reference is made to vapor deposition as an exemplary coating process, e.g., physical vapor deposition (PVD) or chemical vapor deposition (CVD). In contrast to CVD, in PVD, a solid coating material (provided as a target) is first transferred into the gas phase (also referred to as the gaseous phase or vapor), and a layer is formed using this gas phase. In PVD, the gas phase of the coating material can optionally be chemically reacted with a reactive gas to form a chemical compound, which is incorporated into the layer or forms it. During the chemical reaction in PVD, two or more materials are thus combined to form the chemical compound.In chemical vapor deposition, a gaseous starting compound (also called precursor or reactant) is split into at least two reaction products, of which at least one reaction product is incorporated into the coating layer as a coating material, and optionally a second reaction product is removed from the coating process as excess (e.g., using a pump). Optionally, CVD can be performed using a plasma, in which the splitting of the precursor occurs.

[0065] It can be understood that what is described herein for CVD can be applied analogously to any other coating process, e.g. cathode sputtering as an exemplary physical vapor deposition.

[0066] For example, the coating material may comprise or be formed from at least one of the following materials: a metal; a transition metal, an oxide (e.g., a metal oxide or a transition metal oxide); a dielectric; a polymer (e.g., a carbon-based polymer or a silicon-based polymer); an oxynitride; a nitride; a carbide; a ceramic; a semimetal (e.g., carbon); a perovskite; a glass or glass-like material (e.g., a sulfidic glass); a semiconductor; a semiconductor oxide; a semiorganic material, and / or an organic material.

[0067] The precursor source can, for example, have one or more than one gas outlet opening (e.g., configured as a nozzle) and a gas supply connection, which is fluidically coupled to the gas outlet opening and / or which can be or become coupled to a gas reservoir (e.g., by means of a gas line). The gas reservoir can, for example, have a container (e.g., a pressurized container) in which the precursor is arranged, e.g., under excess pressure. The or each gas outlet opening can, for example, be directed toward a transport path that is to be exposed to the precursor emerging from the gas outlet opening. A plurality of gas outlet openings can, for example, be provided by means of a gas distributor (also referred to as a gas shower), which has a cavity that fluidically couples the plurality of gas outlet openings to one another and / or to the gas supply connection.For example, several gas outlet openings can be arranged in a row one behind the other and / or penetrate a plate of the gas distributor which faces the transport path. According to various embodiments, one or more than one processing chamber (e.g. vacuum chamber) can be or become provided by means of a chamber housing in which one or more processing chambers can be or become provided. The chamber housing can, for example, be configured to provide a negative pressure, e.g. a vacuum (then also referred to as a vacuum chamber), and can be coupled to a pump arrangement, e.g. a vacuum pump arrangement (e.g. gas-conducting), and can be configured so that it can withstand the action of the air pressure in the pumped-out state.The chamber housing can alternatively or additionally be configured to provide overpressure (also referred to as a pressure chamber) or atmospheric pressure (also referred to as an atmospheric pressure chamber), which is optionally coupled to the pump assembly. The pressure chamber can be configured to be stable enough to withstand the effects of the pressure.

[0068] According to various embodiments, a processing chamber can be designed to be fluid-tightly closed, e.g., by means of valves. For example, its chamber walls can be fluid-tightly designed and / or its openings can be sealed by means of valves.

[0069] The pump arrangement (comprising at least one vacuum pump, e.g., a high-vacuum pump, e.g., a turbomolecular pump) can make it possible to pump out a portion of the gas from the interior of the processing chamber, e.g., from the processing space. Accordingly, one or more processing chambers can be provided in a chamber housing. For example, the chamber housing can be configured as a vacuum chamber housing or a pressure chamber housing.

[0070] According to various embodiments, a chamber housing, e.g. a processing chamber provided therein, may be configured such that a negative pressure (ie a pressure less than atmospheric pressure) can be provided therein, e.g. a vacuum (ie a pressure of less than 0.3 bar), e.g. a pressure in a range of approximately 10 mbar to approximately 1 mbar (in other words rough vacuum) or less, e.g. a pressure in a range of approximately 1 mbar to approximately 10' 3 mbar (in other words fine vacuum) or less, e.g. a pressure in a range of approximately 10 3 mbar to approximately 10 7 mbar (in other words high vacuum) or less, e.g. a pressure less than high vacuum, e.g. less than about 10 7 mbar. For example, the operating pressure of the processing chamber can be in a range from approximately 0.7 bar to approximately 0.95 bar.

[0071] The atmospheric pressure (e.g. approximately 1 bar) can be the atmospheric pressure acting on the chamber housing (e.g. from outside).

[0072] Alternatively or additionally, a chamber housing, e.g. a processing chamber provided therein, can be configured such that an overpressure (i.e. a pressure of more than atmospheric pressure) can be provided therein, e.g. a pressure of less than 1.3 bar, e.g. a pressure in a range of approximately 1.1 bar to 2 bar or more, e.g. a pressure in a range of approximately 2 bar to approximately 4 bar or more, e.g. a pressure in a range of approximately 4 bar to approximately 6 bar or more. For the embodiments provided herein which relate to a vacuum chamber or a vacuum generated therein, it can be understood that what is described here can apply to any other type of processing chamber, e.g. a overpressure chamber or atmospheric pressure chamber.

[0073] For example, the operating pressure of the processing chamber may be in a range from approximately 4 bar to approximately 10 bar (e.g., approximately 6 bar). Alternatively or additionally, a chemical composition within the processing chamber (also referred to as the chamber interior) may comprise or consist of a protective gas (e.g., argon) and / or a process gas (e.g., molecular hydrogen and / or hydrogen chloride).

[0074] The term "temperature control" herein refers to the supply of thermal energy (also referred to as heating or warming) and / or the removal of thermal energy (also referred to as cooling), such that the temperature of an object to which the thermal energy is supplied and / or removed is changed, preferably according to a specification, e.g., a target temperature (also referred to as Ttarget). Similarly, a temperature control device is configured to temperature control the object, for example, by supplying thermal energy (also referred to as a heating device) and / or removing thermal energy (also referred to as a cooling device).

[0075] A cavity can be understood here, for example, as a coherent cavity which is free of a solid material.

[0076] Fig. 1 illustrates a processing arrangement 100 according to various embodiments, for example, configured according to Example 1, in a schematic side view or cross-sectional view viewed transversely to the transport direction 105, for example, viewed along the direction of gravity or transversely to the direction of gravity. Transverse direction 101, which is transverse to the transport direction 105, can, for example, be transverse to the direction of gravity.

[0077] An exemplary implementation of the processing arrangement 100 is configured according to a so-called vertical configuration, in which the substrates are transported in a vertical orientation (e.g., upright or hanging). The extent of the substrate in the vertical orientation may be greater along the gravitational direction than in the transverse direction 101 (or toward the radiation source 102). The transverse direction 101 is transverse to the transport direction 105, and in the vertical configuration, it is transverse to the gravitational direction. The processing arrangement 100 in the vertical configuration may, for example, comprise the first transport system 110 and the second transport system 112 in the vertical configuration.

[0078] An alternative exemplary implementation of the processing arrangement 100 is configured according to a so-called lateral configuration, in which the substrates are transported in a lateral orientation (e.g., lying down). The extent of the substrate in a lateral orientation can be greater in the transverse direction 101 (or toward the radiation source 102) than along the gravitational direction. The transverse direction 101 is transverse to the transport direction 105 and, in the lateral configuration, parallel to the gravitational direction. The processing arrangement 100 in the lateral configuration can, for example, have the first transport system 110 and the second transport system 112 in the lateral configuration.

[0079] An exemplary implementation of the processing chamber 802 (also referred to as processing chamber) is provided by a chamber housing, which is penetrated along the transport direction 105 by an interior space 802i (also referred to as chamber interior), which provides two cavities 802a, 802b (e.g., fluidically coupled to one another), between which the radiation source 102 is arranged, and each cavity 802a, 802b of which adjoins the radiation source 102, preferably its emission surface. The first transport path 110t can be arranged in a first cavity 802a of the two cavities 802a, 802b or extend through it. The second transport path 112t can be arranged in a second cavity 802b of the two cavities 802a, 802b or extend through it.

[0080] An exemplary implementation 1 of the radiation source 102 is configured to expose the first transport path 110t, which is provided by the first transport system 110, to a first portion 110s of the electromagnetic radiation, which may, for example, be more than approximately 10% (e.g., more than 20%, e.g., more than 30%, e.g., more than 40%) of the electromagnetic radiation 110s generated by the radiation source 102 and / or the power absorbed by the radiation source 102. Alternatively or additionally, the radiation source 102 is configured to expose the second transport path 112t, which is provided by the second transport system 112, to a second portion 112s of the electromagnetic radiation, which may, for example, comprise more than approximately 10% (e.g., more than 20%, e.g., more than 30%, e.g., more than 40%) of the electromagnetic radiation 110s generated by the radiation source 102 and / or the power absorbed by the radiation source 102.

[0081] For example, the first portion 110s of the electromagnetic radiation may propagate into and / or within the first cavity 802a. Alternatively or additionally, the second portion 112s of the electromagnetic radiation may propagate into and / or within the second cavity 802b.

[0082] The implementation 1 or an alternative exemplary implementation 2 of the radiation source 102 (preferably according to example 7) is configured to convert more than approximately 10% (e.g., 25%, e.g., 50%, e.g., more than 75%) of the electrical power absorbed by the radiation source 102 into the electromagnetic radiation (or at least the first portion 110s and second portion 112s), e.g., resistively or inductively.

[0083] The implementation 1, 2 or an alternative implementation 3 of the radiation source 102 is configured to generate the electromagnetic radiation resistively (then also referred to as resistive radiation source 102), e.g. by converting electrical power into thermal power, which is emitted by the radiation source 102 by means of the electromagnetic radiation, e.g. as thermal radiation (also referred to as thermal radiation). For example, more than approximately 10% (e.g. 25%, e.g. 50%, e.g. more than 75%) of the electrical power absorbed by the radiation source 102 can be converted into and / or emitted electromagnetic radiation. The resistive generation of the electromagnetic radiation 110s can take place, for example, by means of an ohmic resistor (also referred to as effective resistance or resistance), which can be provided, for example, by means of a ceramic (e.g. boron nitride or silicon carbide).

[0084] An exemplary implementation of the resistive radiation source 102 (e.g., according to Example 8) is configured to generate infrared radiation as electromagnetic radiation, ie, with a wavelength in a range of 780 nanometers (nm) to 1 millimeter (mm).

[0085] Examples of components of the resistive radiation source 102, by means of which the resistive generation of the electromagnetic radiation occurs, include: a ceramic heater, a gas discharge tube, a tungsten wire, a carbon wire, a layer of boron nitride and / or silicon carbide, and an emitting surface. During operation, the emitting surface can be heated, for example, by means of electrical power, to a temperature of more than Tsetpoint, where Tsetpoint is, for example, more than approximately 200°C, e.g., more than approximately 500°C, e.g., more than approximately 1000°C, e.g., more than approximately 1500°C. The emitting surface can, for example, be a surface of the ceramic (e.g., comprising boron nitride and / or silicon carbide).

[0086] The resistive radiation source 102 allows for considerable flexibility in the type of substrate and design, as well as the operation of the system. For example, the first working example can be implemented particularly cost-effectively.

[0087] Implementation 1, 2, or an alternative implementation 4 of radiation source 102 (e.g., according to Example 8) is configured to generate the electromagnetic radiation inductively (also referred to as inductive radiation source 102), e.g., by means of one or more electromagnetic coils that emit the electromagnetic radiation. For example, more than approximately 10% (e.g., 25%, e.g., 50%, e.g., more than 75%) of the electrical power absorbed by radiation source 102 can be converted into and / or emitted electromagnetic radiation.Alternatively or additionally, the inductive radiation source 102 is configured to generate the electromagnetic radiation in a range of approximately 50 hertz (Hz) to approximately 100 kilohertz (kHz), for example in a range of approximately 50 Hz to approximately 300 Hz, and / or in a range of approximately 200 Hz to approximately 10 kHz, and / or in a range of approximately 1 kHz to approximately 100 kHz (see also Example 8).

[0088] The inductive radiation source 102 minimizes the thermal load, for example of the radiation source 102 itself, since the thermal energy is generated in the transported material (e.g. substrate and / or substrate carrier) itself due to eddy current losses; and / or the processing chamber 802.

[0089] It should be understood that the radiation source 102 does not necessarily have to be configured to convert inductively generated electromagnetic radiation in the transported goods into heat output by induction. For example, the radiation source 102 can also be configured to convert inductively generated electromagnetic radiation itself into heat radiation by induction in the emission surface, which is then emitted toward the transport paths.

[0090] An exemplary implementation of the first transport system 110 and the second transport system 112 (also referred to as a joint configuration) is configured such that the first transport system 110 and the second transport system 112 exchange torque with each other, which drives the transport of the transported goods. This simplifies the design.

[0091] The exemplary implementation of the first transport system 110 and the second transport system 112, or an alternative thereto, is configured such that the same transported material (e.g., the same substrate carrier) can be transported selectively by means of the first transport system 110 or the second transport system 112. This reduces construction costs and complexity.

[0092] In the following, reference is made to additional exemplary implementations of a transport system, wherein the descriptions for this purpose can apply analogously to the first transport system 110 and / or the second transport system 112.

[0093] An exemplary implementation of a transport system is configured to transport a plate-shaped transport object (e.g., a substrate), for example, in a lateral configuration or a vertical configuration. An alternative exemplary implementation of the transport system is configured to transport a strip-shaped substrate, for example, in a lateral configuration or a vertical configuration. It should be understood that in some embodiments, substrates of any geometry can also be transported.

[0094] An exemplary implementation of a transport system (preferably according to Example 5) is configured to transport the substrate by means of a substrate carrier (also referred to as a carrier transport configuration). The substrate carrier can be configured to receive and hold one or more substrates. Exemplary substrates for this are plate-shaped, e.g., in the form of a wafer or glass pane. For example, the transport system can have a plurality of rotatably mounted transport rollers arranged below the transport path in the direction of gravity, on which the transported item (e.g., the substrate carrier) is transported in an upright position. Alternatively or additionally, the transport system can have one or more guide rails configured to be coupled to the transported item (e.g., substrate carrier) and to guide a movement of the substrate carrier along the transport path.

[0095] An exemplary implementation of a substrate carrier (preferably according to Example 5) comprises a plate and a through-opening which extends from one side (illustratively also referred to as the back side) of the plate toward the substrate receiving region of the substrate carrier and opens into the substrate receiving region. The substrate receiving region can, for example, have a recess and / or at least be configured to receive and hold one or more substrates. For example, the substrate carrier can be transported such that the electromagnetic radiation is supplied to the substrate receiving region through the through-opening (in which case the through-opening is also referred to as a heating opening). However, a heating opening does not necessarily have to be present, for example if the substrate carrier is intended to supply the thermal energy to the substrate conductively.

[0096] For better understanding, the two opposite sides of the transported goods are also referred to as the front and back, whereby the front of the transported goods is clearly the side that is to be exposed to the coating material, e.g. is aligned facing the coating device.

[0097] It should be understood that a substrate carrier is not necessarily required to transport the substrate. For example, a transport system can be configured such that a substrate can be transported resting on the transport rollers of the transport system (e.g., touching them) (also referred to as a direct transport configuration). An exemplary implementation of a transport system is configured in a lateral configuration, for example, such that the transported item (e.g., the substrate) is transported resting on multiple transport rollers of the transport system.

[0098] Fig. 2 illustrates a processing arrangement 100 according to various embodiments 200, for example, configured according to Example 10, in a schematic side view or cross-sectional view viewed transversely to the transport direction 105, for example, viewed along the direction of gravity or transversely to the direction of gravity. The first transport path 110t can be arranged between the first coating device 210 and the radiation source 102. The second transport path 112t can be arranged between the second coating device 212 and the radiation source 102.

[0099] An exemplary implementation of the processing chamber 802 has the two cavities 802a, 802b (e.g., fluidically coupled to one another), between which the radiation source 102 is arranged, and of which the first cavity 802a adjoins the first coating device 210, of which the second cavity 802b adjoins the second coating device 212.

[0100] Reference is made below to exemplary implementations of a coating device, wherein the descriptions for this purpose can apply analogously to the first coating device 210 and / or second coating device 212.

[0101] An exemplary implementation of a coating device may comprise a gas distributor, which may have a plurality of rows of gas outlet openings arranged one behind the other along the transport direction 105, wherein optionally several of the rows are arranged one behind the other in the viewing direction. The gas distributor may be configured to emit a gas supplied thereto (e.g., comprising one or more precursors) in the direction of the radiation source 102. An alternative exemplary implementation of a coating device may comprise a sputtering device (e.g., a magnetron) configured to atomize the coating material by means of a plasma and, in doing so, to emit it in the direction of the radiation source 102.

[0102] For example, the substrate receiving area (e.g., the substrate received therein) can be arranged between the heating opening of the substrate carrier and the coating device. The substrate receiving area can then face the coating device, and the heating opening can face the radiation source 102. During operation of the coating device, the substrate receiving area is exposed to the gaseous material (e.g., containing the precursor or the atomized coating material), while the electromagnetic radiation is supplied to it through the heating opening.

[0103] Fig. 3A illustrates a processing arrangement 300a according to various embodiments, for example, configured according to Example 1, in a schematic side view or cross-sectional view looking along the transport direction 105. The direction of gravity is in the vertical configuration direction 103, and in the lateral configuration direction 101.

[0104] An exemplary implementation of each of the two transport systems 110, 112 (also referred to as connected transport systems) has a plurality of transport rollers 302 arranged one behind the other along the transport direction 105, which are rotatably mounted about a rotation axis that is parallel to the transverse direction.

[0105] An alternative exemplary implementation of the two transport systems 110, 112 is configured in the joint configuration. The joint configuration includes, for example, a transport roller, by means of which the transported material (e.g., substrate) can be transported either along the first transport path 110t or along the second transport path 112t. The transport roller can, for example, be adjacent to the first cavity 802a and the second cavity 802b.

[0106] An exemplary implementation of the transport item 304 includes a substrate carrier (also referred to as a carrier) configured as a susceptor, which is configured to receive one or more substrates 306. In a direct transport configuration, the substrate of the transport item 304 can be transported resting on transport rollers (for example, touching them).

[0107] During operation, the rear side of the transported material (e.g., comprising the substrate and / or the substrate carrier) can face the radiation source 102, so that thermal energy is supplied to the rear side by means of the electromagnetic radiation 110s generated by the radiation source 102 (also referred to as heating). Alternatively or additionally, the substrate carrier can supply the thermal energy (also referred to as heat energy) to the substrate, e.g., conductively. For example, the radiation source 102 can be configured to emit the electromagnetic radiation 110s from both sides. Alternatively or additionally, the radiation source 102 can comprise a plurality of cylindrical heating devices (e.g., ceramic heaters) configured to emit the electromagnetic radiation 110s in a radial direction.

[0108] The processing chamber 802, e.g., its chamber interior, may preferably provide the two cavities 802a, 802b, each of which may optionally have a coating region to which one or more coating devices are assigned, each coating device being configured to emit a layer-forming material (e.g., sputtered coating material and / or precursor) into the coating region assigned to it.

[0109] The layer-forming material (e.g. atomized coating material and / or precursor) is configured to form a coating, which may have one or more layers, on the transported material (e.g. substrate) exposed to the layer-forming material.

[0110] Fig.3B illustrates a processing arrangement 100 according to various embodiments 300b, for example configured according to Example 1, in a schematic side view or cross-sectional view looking along a plane spanned by the transport direction 105 and transverse direction 101, e.g. along the direction of gravity.The embodiment 300b comprises: an inlet-side lock chamber 352, which has a transport material transfer valve 352a, into which the first transport path and second transport path open; an outlet-side lock chamber 354, which has a transport material transfer valve 354a, into which the first transport path and second transport path open; a processing chamber configured as a heating chamber 356, which has the 802 radiation source 102; a processing chamber configured as a coating chamber 358, which has two coating devices 210, 212 and the radiation source 102 between them; and a processing chamber configured as a cooling chamber 360.

[0111] Fig.4 illustrates a method 400 according to various embodiments, for example, configured according to example

[0112] 13, in a schematic flow diagram. The method 400 comprises, in 401, transporting a first substrate along a first transport path in a processing chamber (e.g., through a vacuum); in 403, transporting a second substrate along a second transport path, which runs alongside the first transport path, through the processing chamber (e.g., through the vacuum); and in 405, generating electromagnetic radiation, to which the first substrate and the second substrate are exposed, by means of a radiation source arranged between the first transport path and the second transport path.

[0113] The method optimally comprises, in 407, heating the first substrate and the second substrate by means of the electromagnetic radiation (e.g., infrared radiation); and / or in 409, coating the first substrate and the second substrate, for example on a side of the first substrate and the second substrate facing away from the radiation source 102 (also descriptively referred to as the back side), for example by means of CVD.

[0114] 5A and 5B each illustrate a processing arrangement according to various embodiments 500a, 500b, for example, configured according to Example 1, in a schematic side view or cross-sectional view looking along the transport direction 105. The processing arrangement 500a has two transport systems 110, 112 provided in a common configuration, which share a transport roller 502. Each of the transport systems 110, 112 can furthermore have a guide rail 522 on which the transported item 304 is supported. The processing arrangement 500b has two transport systems 110, 112 separated from one another, which have separate transport rollers 502. Each of the transport systems 110, 112 can furthermore have a guide rail on which the transported item 304 is supported.

[0115] In the following, various working examples for implementing the aspects provided herein (e.g., method and / or processing arrangement) are explained, which relate to what has been described above and what is shown in the figures.

[0116] An exemplary working example 1 is configured for the continuous vapor deposition of silicon on the first substrate and the second substrate, the method comprising: transporting the first substrate and the second substrate into the processing chamber (which, in the context of CVD, is also referred to as a reaction chamber); providing a precursor in the processing chamber to which the first substrate and the second substrate are exposed, wherein the precursor comprises, for example, a gaseous silicon precursor compound; forming a silicon layer by means of the vapor deposition of silicon based on the precursor on the first substrate and the second substrate;Heating the first substrate and second substrate to a temperature Tdesired-substrate by means of the electromagnetic radiation emitted by the radiation source, while the first substrate and the second substrate are exposed to the precursor and / or while the layer is being formed. Tdesired-substrate can, for example, be more than approximately 200°C, e.g., more than approximately 500°C, e.g., more than approximately 1000°C, e.g., more than approximately 1500°C.

[0117] An exemplary working example 2 has a spatial arrangement of transport material and radiation source 102 (e.g. heating device) in the processing chamber 802 such that the largest possible proportion (e.g. 50% or more) of the radiation power radiated by the radiation source 102 (e.g. thermal radiation, magnetic field in the case of inductive heaters or the like) is supplied to the transport material (e.g. comprising the substrates and / or substrate carriers), and / or the smallest possible proportion (e.g. 50% or less, e.g. 20% or less) of the radiation power radiated by the radiation source 102 is supplied to the processing chamber, e.g. the chamber wall and / or other chamber fittings and components.

[0118] An exemplary working example 3 has two transport systems (e.g., separate from one another or provided in a common configuration) by means of which two transport materials (e.g., substrates and / or carriers, e.g., susceptors) are transported on adjacent transport paths (e.g., parallel to one another) through the processing chamber 802. The radiation source 102 (e.g., having one or more than one heating device) is arranged centrally between the two substrates and heats both substrates simultaneously with the same intensity.

[0119] An exemplary working example 4 is set up in a vertical configuration so that the transport material is transported in a vertical orientation through the processing chamber and / or is divided into the two parallel transport paths (also referred to as transport routes).

[0120] An exemplary working example 5 includes the radiation source 102, which is spaced apart from the first transport path 110t and the second transport path 112t (also referred to as a centrally arranged radiation source 102). For example, the radiation source 102 has two opposing emitting surfaces, each emitting surface being spaced apart from the directly opposite transport path. It can be understood that this configuration is particularly advantageous when the first transport path 110t and the second transport path 112t are exposed to the same chemical composition (e.g., the coating material or precursor) or are at least intended to be exposed to the same process conditions.However, if the first transport path 110t and the second transport path 112t are to be exposed to different process conditions, they can also differ from each other in their distance from the radiation source 102. This facilitates, for example, the realization of a different heat input on both sides of the radiation source 102.

[0121] An exemplary working example 6 comprises the transport of two adjacent rows of substrates, between which the radiation source 102 is arranged (e.g., centrally).

[0122] An exemplary working example 7 comprises a radiation source 102 having a plurality of heating devices configured to radiate the electromagnetic radiation radially in all directions.

[0123] An exemplary working example 8 features an arrangement of the transport paths relative to each other such that both transport paths are exposed to essentially the same power density of the electromagnetic radiation. This allows for uniform heating of the transported material.

[0124] An exemplary working example 9 has a first chamber wall of the processing chamber, which is shielded from electromagnetic radiation by the first substrate, and a second chamber wall of the processing chamber opposite the first chamber wall, which is shielded from electromagnetic radiation by the second substrate. This reduces the thermal load on the processing chamber, simplifying the design (e.g., eliminating the need for cooling).

[0125] An exemplary working example 10 includes a substrate carrier having a section and supporting a substrate, the substrate being arranged between the radiation source 102 and the section. This reduces the thermal load on the substrate carrier, simplifying the design (e.g., eliminating the need for cooling).

[0126] An exemplary working example 11 has one or more than one coating device which is configured to coat the side of the transported material (e.g. substrate) facing away from the radiation source 102 (also descriptively referred to as the front side).

[0127] An exemplary working example 12 shows chemical vapor deposition (CVD) for coating a substrate (e.g., wafers). In chemical vapor deposition, silicon or a silicon-containing compound, for example, is deposited from the gas phase. Examples of components of the process gas to which the substrate is exposed and which contains the precursor include: silicon tetrachloride, trichlorosilane, molecular hydrogen, and hydrogen chloride gas.

[0128] An exemplary working example 13 comprises supplying the process gas as a mixture or at least two components of the process gas separately from each other, which only form the mixture in the coating area.

[0129] The process gas flows around the substrate to be coated, which is heated to a temperature of approximately 1250°C by electromagnetic radiation. A layer containing or consisting of silicon is formed on the surface of the substrate using the process gas.

[0130] An exemplary working example 14 has two gas distributors (e.g., of the gas shower type) between which the two transport paths are arranged.

[0131] It can be understood that one or more than one processing chamber 802, in each of which a radiation source 102 is arranged, and / or one or more than one additional processing chamber can be provided, which can be fluidly coupled to the processing chamber and / or through which the two adjacently arranged transport paths can run.

[0132] An exemplary working example 15 has two lock chambers, between which one or more than one processing chamber, of which in each processing chamber a radiation source 102 is arranged between the two transport paths.

[0133] An exemplary working example 16 includes two processing chambers that differ from each other, for example, in the number of coating devices that can be arranged therein. For example, a processing chamber without coating devices arranged therein can be used as a heating chamber, and a processing chamber with coating devices arranged therein can be used as a coating chamber. An exemplary working example 17 includes one or more processing chambers in which a cooling device is arranged, and which is arranged, for example, behind the processing chamber along the transport direction.

[0134] By means of the aspects provided herein, for example comprising two adjacent transport paths between which the radiation source is arranged, one or more of the following is achieved:

[0135] - while maintaining the same chamber length, the productivity of the entire process line can be doubled;

[0136] - the chamber length can be halved while maintaining the same productivity.

[0137] - optimal utilization of the electrical power supplied to the radiation source 102 and / or the power of the electromagnetic radiation;

[0138] - Elimination of shielding plates or other protection against unwanted energy input in the other chamber fittings and / or chamber components and / or chamber walls;

[0139] - Halving the number of heaters and / or the process chamber length while maintaining the same productivity;

[0140] - Reduction of cooling devices (e.g. on the processing chamber, the transport system and / or the substrate carrier).

[0141] According to an exemplary working example 18, a region (also referred to as a switching region) is provided between the two transport paths, in which an exchange of thermal radiation takes place. If, for example, the thermal energy is generated in the substrate carrier itself (e.g., by means of electrical induction), the substrate carrier contributes to the generation of thermal radiation that is emitted into the switching region. In other words, the substrate carrier exchanges thermal radiation with the switching region between the two transport paths. In this context, exploitation is made of the fact that a large part of the energy transmitted in the switching region via thermal radiation is absorbed by one of the substrate carriers, since the switching region is primarily delimited by the substrate carriers. This improves energy efficiency.In other words, the largest possible proportion of the thermal radiation supplied to the switching area is absorbed by one of the substrate carriers.

[0142] According to an exemplary working example 19, the substrate carrier conductively supplies the thermal energy to the substrate. For this purpose, the substrate carrier is thermally heated, for example by generating the thermal energy in the substrate carrier itself (e.g., by means of electrical induction). As explained in working example 18, the substrate carrier releases thermal energy to the switching area by means of thermal radiation, but simultaneously absorbs a large portion of the released thermal energy from the switching area by means of thermal radiation. Alternatively or in addition to the conductive transport of thermal energy from the substrate carrier to the substrate, thermal energy can be transported from the substrate carrier to the substrate by means of thermal radiation.According to an exemplary working example 20, the processing arrangement comprises: a processing chamber, a first transport system for transporting a first substrate along a first transport path in the processing chamber; a second transport system for transporting a second substrate along a second transport path in the processing chamber, which runs next to the first transport path, preferably parallel thereto; a switching region arranged between the first transport path and the second transport path and configured to switch electromagnetic radiation to which the first transport path and the second transport path are exposed; a first coating device and a second coating device, between which the first transport path and the second transport path are arranged; a substrate carrier configured to be transported in a first configuration by means of the first transport system along the first.

[0143] transport path and, in a second configuration, to be transported along the second transport path by means of the second transport system. Preferably, the substrate carrier is configured to receive the electromagnetic radiation and to support the substrate in such a way that the substrate carrier is conductively coupled to the substrate.

Claims

Patent claims 1. Processing arrangement (100), comprising: • a processing chamber (802), • a first transport system (110) for transporting a first substrate along a first transport path (110t) in the processing chamber (802); • a second transport system (112) for transporting a second substrate along a second transport path (112t) in the processing chamber (802), which runs next to the first transport path (110t), preferably parallel thereto; • a first coating device (210) and a second coating device (212), between which the first transport path (110t) and the second transport path (112t) are arranged; • a radiation source (102) arranged between the first transport path (110t) and the second transport path (110t) and configured to generate electromagnetic radiation to which the first transport path (110t) and the second transport path (110t) are exposed.

2. Processing arrangement (100) according to claim 1, • wherein the radiation source (102) has a first emission surface which is configured to emit thermal radiation as electromagnetic radiation towards the first transport path (110t); and / or • wherein the radiation source (102) has a second emission surface which is configured to emit thermal radiation as electromagnetic radiation towards the second transport path (112t).

3. Processing arrangement (100) according to claim 1 or 2, • wherein the first transport path (110t) is arranged in a first cavity of the processing chamber (802), the first cavity being adjacent to the radiation source (102) and / or the first coating device (210); • and wherein the second transport path (112t) is arranged in a second cavity of the processing chamber (802), the second cavity being adjacent to the radiation source (102) and / or the second coating device (212).

4. Processing arrangement (100) according to claim 3, wherein the first cavity and the second cavity are fluidly coupled to one another.

5. Processing arrangement (100) according to one of claims 1 to 4, wherein the radiation source (102) is configured to supply thermal energy to a first substrate transported along the first transport path (110t) and to a second substrate transported along the second transport path (112t) by means of the electromagnetic radiation.

6. Processing arrangement (100) according to one of claims 1 to 5, • wherein the first transport system and the second transport system are provided by means of one or more than one row of several transport rollers arranged one behind the other along a transport direction; • wherein the first transport path (110t) and / or the second transport path (112t) are parallel to the transport direction.

7. Processing arrangement (100) according to one of claims 1 to 6, further comprising a substrate carrier which is arranged • to be transported in a first configuration by means of the first transport system (110) in a transport direction along the first transport path (110t), and • to be transported in a second configuration by means of the second transport system (112) in the transport direction along the second transport path (112t).

8. Processing arrangement (100) according to claim 7, wherein the substrate carrier is configured to receive the substrate such that they are conductively coupled to one another.

9. Processing arrangement (100) according to claim 8, wherein the substrate carrier is configured to at least partially absorb the electromagnetic radiation.

10. Processing arrangement (100) according to one of claims 1 to 9, wherein the electromagnetic radiation comprises thermal radiation or is generated inductively.

11. Processing arrangement (100) according to one of claims 1 to 10, • wherein the first coating device is configured to provide a first coating material to which the first transport path (110t) is exposed; • wherein the second coating device is configured to provide a second coating material to which the second transport path (112t) is exposed.

12. Processing arrangement (100) according to one of claims 1 to 11, wherein the first transport path and the second transport path differ from each other in their distance from the radiation source.

13. Processing arrangement (100) according to one of claims 1 to 12, wherein the radiation source (102) is configured to generate the electromagnetic radiation resistively.

14. Method (400), comprising: • Transporting a first substrate along a first transport path (110t) in a processing chamber; • Transporting a second substrate along a second transport path (112t), which runs alongside the first transport path (110t), in the processing chamber, preferably during the transport of the first substrate, • Generating electromagnetic radiation to which the first substrate and the second substrate are exposed by means of a radiation source (102) which is arranged between the first transport path (110t) and the second transport path (112t); • Coating the first substrate by means of a first coating device and the second substrate by means of a first coating device when they are exposed to the electromagnetic radiation and arranged between the first coating device and the second coating device.

15. Using a radiation source (102) for generating electromagnetic radiation to which a first transport path (110t) and a second transport path (112t) are exposed, which are arranged next to one another in a processing chamber (802) and between two coating devices and between which the radiation source (102) is arranged.

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