Optoelectronic semiconductor component and method for manufacturing an optoelectronic semiconductor component

Abstract

An optoelectronic semiconductor component (1) comprising a semiconductor body (10) having a first region (101), a second region (102) and an active region (103) intended for the emission of electromagnetic radiation through an emission side (10A) of the semiconductor body (10) is described herein. The semiconductor body (10) comprises a rear side (10B) remote from the emission side (10A). The active region (103) comprises a quantum well region (1031) and a barrier region (1032). A deactivation region (200) is formed in the active region (103), in which an electrical bandgap of the quantum well region (1031) is increased. Furthermore, a method for manufacturing an optoelectronic semiconductor component (1) is provided.

Description

[0001] Description

[0002] OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND METHOD FOR MANUFACTURING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT

[0003] The present application relates to an optoelectronic semiconductor component and a method for manufacturing an optoelectronic semiconductor component . In particular, the optoelectronic semiconductor component is configured to emit and / or detect electromagnetic radiation, for example light that is perceptible to the human eye .

[0004] It is an obj ect of the present disclosure to provide an optoelectronic semiconductor component having improved optical characteristics and ef ficiency .

[0005] A further obj ect is to provide a method for manufacturing an optoelectronic semiconductor component having improved optical characteristics and ef ficiency .

[0006] These obj ects are achieved by devices and a method according to the independent patent claims . Advantageous embodiments and further developments of the devices and the method are the subj ect of the dependent patent claims and are furthermore apparent from the following description and the figures .

[0007] According to at least one embodiment , the optoelectronic semiconductor component comprises a semiconductor body having a first region, a second region and an active region intended for the emission of electromagnetic radiation through an emission side of the semiconductor body . Preferably, the first region has a first conductivity and the second region has a second conductivity . The first conductivity type is , for example , an n-type conductivity and the second conductivity type is , for example , a p-type conductivity or vice versa . For example , the first region is doped with a first doping material and the second region is doped with a second doping material . The active region advantageously comprises a pn j unction .

[0008] According to at least one embodiment of the optoelectronic semiconductor component , the semiconductor body comprises a rear side remote from the emission side . The emission side is preferably configured to improve transmission of electromagnetic radiation . For example , the emission side comprises an intentional roughening to facilitate the emission of radiation and an electrical connection . The rear side is in particular configured to provide an electrical connection of the semiconductor body and / or to provide a mechanical connection to a carrier .

[0009] According to at least one embodiment of the optoelectronic semiconductor component , the active region comprises a quantum well region and a barrier region . The barrier region is preferably configured to confine charge carriers in the quantum well region . The quantum well region is particularly configured to facilitate a recombination of charge carriers under emission of radiation . In particular, the active region comprises a double heterostructure , a single quantum well ( SQW) , or a multiple quantum well (MQW) structure for generating or detecting electromagnetic radiation .

[0010] According to at least one embodiment of the optoelectronic semiconductor component , a deactivation region is formed in the active region, in which an electrical bandgap of the quantum well region is increased . In other words , a quantum well intermixing ( short : QWI ) occurs in the deactivation region . In particular, the electrical bandgap of the quantum well region is locally increased in order to decrease the density of electrical current in the deactivation region . Consequently, reduced light generation occurs in the deactivation region and electric susceptibility, in particular relative permittivity or complex dielectric function, is modi fied .

[0011] According to at least one embodiment , the optoelectronic semiconductor component comprises a semiconductor body having a first region, a second region and an active region intended for the emission of electromagnetic radiation through an emission side of the semiconductor body, wherein

[0012] - the semiconductor body comprises a rear side remote from the emission side ,

[0013] - the active region comprises a quantum well region and a barrier region,

[0014] - a deactivation region is formed in the active region, in which an electrical bandgap of the quantum well region is increased .

[0015] An optoelectronic semiconductor component described herein is , inter alia, based on the following considerations : A semiconductor body of an optoelectronic semiconductor component can comprise several regions which have a high optical absorption, such as a contact element formed with a metal , for example . Optically absorbing regions can deteriorate the optical performance and decrease the overall ef ficiency of the semiconductor component . In order to reduce light generation in the near vicinity of strong optically absorbing regions , it is possible to structure a rear side of the semiconductor body in order to remove material in the vicinity of the optically absorbing regions . The removed regions can be replaced with an insulating material to avoid an inj ection of current in the optically absorbing regions . However, such a process makes an additional etching step necessary and can produce further unwanted defects in the semiconductor body .

[0016] The optoelectronic semiconductor component described herein is , among other things , based on the idea of altering the epitaxial layers forming the active region in such a way that a carrier recombination and a lateral current spreading in the local vicinity of strong optical absorbers , as for example directly below an alloyed n-contact element made from metal , are prevented due to local bandgap engineering . In particular, a deactivation region is formed in the active region, in which an electrical bandgap of a quantum well region is increased . As an added benefit , this local bandgap enlargement will make the epitaxial layers locally more transparent . In other words , the deactivation region will absorb less radiation as compared to an unpumped quantum well region with small carrier density . A further step of structuring the rear side of the semiconductor body by etching is an optional step .

[0017] According to at least one embodiment of the optoelectronic semiconductor component , the semiconductor body is formed with a quaternary or penternary I I I-V compound semiconductor material . For example , at least one layer, in particular all layers of the semiconductor body, are formed with a quaternary or penternary I I I-V compound semiconductor material . A I I I-V compound semiconductor material has at least one element from the third main group, such as B, Al , Ga, In, and one element from the fi fth main group, such as N, P, As . In particular, a quaternary I I I-V compound semiconductor material comprises at least four di f ferent elements selected from the third main group and the fi fth main group, for example nitride and phosphide compound semiconductors . Such a quaternary compound may further comprise , for example , one or more dopants as well as additional constituents .

[0018] According to at least one embodiment of the optoelectronic semiconductor component , the semiconductor body is formed with (AlxGai-x) ylni-yAszPi-z and / or (AlxGai-x)YIni-YP, wherein 0 < x < 1 , 0 < y < 1 , 0 < z < 1 . Preferably, such a composition allows for an ef ficient quantum well intermixing in the active region .

[0019] According to at least one embodiment of the optoelectronic semiconductor component , a Q-value in the quantum well region is smaller than a Q-value in the barrier region .

[0020] The Q-value refers to a ratio of Al to Al+Ga, i . e . Qxx where xx = Al / (Al + Ga ) , for the material system (AlxGai-x)YIni-YP with 0 < x < 1 , 0 < y < 1 . A smaller Q-value corresponds to a lower Al content and a higher Q-value corresponds to a higher Al content . For example Q0 refers to GazIn^F with y chosen such that the semiconductor is grown lattice matched to the growth substrate or with a dedicated strain configuration . For example Q100 refers to AIY I UZ-YP with y chosen such that the semiconductor is grown lattice matched to the growth substrate or with a dedicated strain configuration . According to at least one embodiment of the optoelectronic semiconductor component , a Q-value in the quantum well region is at most 30 .

[0021] According to at least one embodiment of the optoelectronic semiconductor component , a Q-value in the barrier region is at least 30 , preferably at least 40 and particularly preferably at least 50 . A preferred Q-value lies within 50- 100 .

[0022] According to at least one embodiment of the optoelectronic semiconductor component , the first region has an n- conductivity and the second region has a p-conductivity . For example , the first region is doped with a first doping material and the second region is doped with a second doping material .

[0023] According to at least one embodiment of the optoelectronic semiconductor component , the deactivation region comprises at least one of the following materials : Zn, Te , Se , S , Si , Mg . Preferably, the deactivation region is formed by introducing a material which has a high di f fusion rate . In particular, the deactivation region is formed by a material which replaces a dopant and which triggers a lattice site transposition of certain elements in the quantum well region with certain elements in the barrier region to achieve a quantum well intermixing .

[0024] According to at least one embodiment of the optoelectronic semiconductor component , the semiconductor component comprises a first contact element on the emission side and a second contact element on the rear side , and the deactivation region is arranged below the first contact element . Preferably, the optoelectronic semiconductor component comprises a plurality of first contact elements . By using a plurality of first contact elements , a current is inj ected advantageously homogenously into the semiconductor body . In particular, the first and / or second contact elements are formed with a metal . Thus , the first and / or second contact elements can have a high optical absorption . By placing the deactivation region below the first contact element which is arranged on the emission side , the generation of light is decreased in the vicinity of the highly absorbing region underneath the first contact element .

[0025] According to at least one embodiment of the optoelectronic semiconductor component , the deactivation region extends from the rear side at least to the active region . In particular, the deactivation region is formed by di f fusing a material into the semiconductor body from the rear side .

[0026] According to at least one embodiment of the optoelectronic semiconductor component , an insulating element is arranged at the rear side . Preferably, the insulating element is formed with an electrically insulating material such as silicon oxide or silicon nitride .

[0027] According to at least one embodiment of the optoelectronic semiconductor component , the insulating element comprises a plurality of layers having di f ferent refractive indices in an alternating arrangement . Preferably, the insulating element comprises a dielectric mirror, in particular a Distributed Bragg Reflector ( short : DBR mirror ) . A DBR mirror has a high reflectivity for a range of wavelengths , i . e . the photonic stop-band with a central frequency fo . According to at least one embodiment of the optoelectronic semiconductor component , the insulating region extends into the semiconductor body in a protruding region . Preferably, the protruding region is arranged in the deactivation region . In particular, a part of the semiconductor body is removed and replaced with material of the insulating region in the protruding region . The protruding region further decreases the density of current in the deactivation region .

[0028] According to at least one embodiment of the optoelectronic semiconductor component , the protruding region extends completely through the active region . The protruding region which extends completely through the active region completely prevents the generation of light in the deactivation region . The deactivation region further provides for a higher optical transparency which prevents undesired absorption of radiation inside the semiconductor body .

[0029] According to at least one embodiment of the optoelectronic semiconductor component , a connection element is arranged between the second contact element and the second region . The connection element preferably lowers an electrical contact resistance between the second contact element and the second region . In particular, the connection element increases an optical reflectivity of the rear side of the semiconductor body .

[0030] According to at least one embodiment of the optoelectronic semiconductor component , the connection element is formed with a transparent conductive material . A transparent conductive material is for example an indium tin oxide ( short : ITO) or an indium zinc oxide ( short : I ZO) . A method for manufacturing an optoelectronic semiconductor component is also disclosed . The method for manufacturing an optoelectronic semiconductor component is particularly suitable for manufacturing the optoelectronic semiconductor component described herein . This means that all features disclosed in connection with the optoelectronic semiconductor component are also disclosed for the method for manufacturing an optoelectronic semiconductor component and vice versa .

[0031] According to at least one embodiment , the method for manufacturing an optoelectronic semiconductor module comprises the step of providing a semiconductor body comprising a first region, a second region and an active region intended for the emission or detection of electromagnetic radiation on a growth substrate . Preferably, the regions of the semiconductor body are grown epitaxially . In other words , the semiconductor body is in particular a monolithic body .

[0032] According to at least one embodiment , the method for manufacturing an optoelectronic semiconductor module comprises the step of arranging a connection element on a side of the semiconductor body remote from the growth substrate . The connection element is preferably formed with a transparent electrically conductive material . In particular, the connection element completely covers the side of the semiconductor body remote from the growth substrate .

[0033] According to at least one embodiment , the method for manufacturing an optoelectronic semiconductor module comprises a step of structuring the connection element . In particular, the connection element is structured using a mask layer and a first etching process . The mask layer is preferably formed with an organic material , in particular a photosensitive resist material . For example , the mask layer is formed with an epoxy .

[0034] According to at least one embodiment , the method for manufacturing an optoelectronic semiconductor module comprises the step of introducing a deactivation region in the semiconductor body from a side remote from the growth substrate . The deactivation region is in particular introduced in regions arranged adj acent to the connection element .

[0035] According to at least one embodiment , the method for manufacturing an optoelectronic semiconductor module comprises the steps of :

[0036] - providing a semiconductor body comprising a first region, a second region and an active region intended for the emission or detection of electromagnetic radiation on a growth substrate ,

[0037] - arranging a connection element on a side of the semiconductor body remote from the growth substrate ,

[0038] - structuring the connection element , and

[0039] - introducing a deactivation region in the semiconductor body from a side remote from the growth substrate .

[0040] According to at least one embodiment of the method for manufacturing an optoelectronic semiconductor module , the deactivation region is introduced before the connection element is arranged . This is in particular advantageously i f the semiconductor body comprises a hard mask region . Thus , the semiconductor body itsel f does already provide for a mask which can laterally delimit a di f fusion of the deactivation region . According to at least one embodiment of the method for manufacturing an optoelectronic semiconductor module , a part of the second region and / or the active region and / or the first region are removed before the deactivation region is introduced . In particular, the second region and / or the active region and / or the first region are partially removed by a second etching process . Preferably, the second region and / or the active region and / or the first region are removed in a region adj acent to the connection region . The removal of parts of the semiconductor before introducing deactivation region can facilitate a di f fusion process . Preferably, the di f fusion is carried out as a "Side Wall" di f fusion .

[0041] According to at least one embodiment of the method for manufacturing an optoelectronic semiconductor module , a part of the second region a part of the second region and / or the active region and / or the first region are removed after the deactivation region is introduced . Preferably, the di f fusion is carried out as a "Top-Down" di f fusion .

[0042] For the use of a "Top-Down" di f fusion a shielding layer can be arranged on the semiconductor body remote from the growth substrate to delimit a lateral extension of the deactivation region . The shielding layer is preferably impermeable for the material used in the di f fusion process for the deactivation region . In particular, the shielding layer is formed using at least one of the following materials SiO, SiN, SiON . For example , a lateral extension of the shielding layer is larger or smaller than a lateral extension of the connection element . Thus , the shielding layer can be adapted to account for a lateral di f fusion of the di f fusion process for the deactivation region . According to at least one embodiment of the method for manufacturing an optoelectronic semiconductor module , the deactivation region is introduced by di f fusion or a passivation step . In particular, the deactivation region is formed by di f fusing a material into the semiconductor body which causes a quantum well to intermix in the active region . Preferably, the passivation step comprises a step of reducing a density of dangling bonds on a surface for example by introduction of sul fur or oxygen .

[0043] According to at least one embodiment of the method for manufacturing an optoelectronic semiconductor module , a hard mask region is provided on the second region of the semiconductor body . In particular, the semiconductor body comprises a hard mask region which is arranged on a side of the second region remote from the active region . The hard mask region is preferably epitaxially grown on the second region . For example , the hard mask region is formed with GaAs . Preferably, the hard mask region has a thickness of at least 3 nm and of at most 15 nm . The hard mask region preferably covers the second region completely . Furthermore , the hard mask region can be impermeable for a material used in the di f fusion process for introducing the deactivation region .

[0044] An optoelectronic semiconductor component described herein is particularly suitable for use in light-emitting diodes for the visible and / or infrared spectrum . Preferably, the semiconductor component described herein is used in display applications , horticulture lighting, In-Cabin sensing or general illumination . Further advantages and advantageous designs and further developments of the optoelectronic semiconductor component will become apparent from the following exemplary embodiments , which are described below in association with the figures .

[0045] In the figures :

[0046] Figure 1A shows a schematic cross-sectional view of an optoelectronic semiconductor component described herein according to a first exemplary embodiment ,

[0047] Figure IB shows a detailed schematic cross-sectional view of an optoelectronic semiconductor component according to the first exemplary embodiment ,

[0048] Figure 2 shows a schematic cross-sectional view of an optoelectronic semiconductor component described herein according to a second exemplary embodiment ,

[0049] Figures 3A to 3D show schematic cross-sectional views of an optoelectronic semiconductor component described herein in di f ferent steps of a method for its manufacturing according to a first exemplary embodiment ,

[0050] Figures 4 shows a schematic cross-sectional view of an optoelectronic semiconductor component described herein in a further step of a method for its manufacturing according to a second exemplary embodiment , Figure 5 shows a schematic cross-sectional view of an optoelectronic semiconductor component described herein according to a third exemplary embodiment ,

[0051] Figure 6 shows a schematic cross-sectional view of an optoelectronic semiconductor component described herein according to a fourth exemplary embodiment ,

[0052] Figures 7A and 7B show schematic cross-sectional views of an optoelectronic semiconductor component described herein in di f ferent steps of a method for its manufacturing according to a third exemplary embodiment ,

[0053] Figures 8A to 8 F show schematic cross-sectional views of an optoelectronic semiconductor component described herein in di f ferent steps of a method for its manufacturing according to a fourth exemplary embodiment , and

[0054] Figures 9A to 9F show schematic cross-sectional views of an optoelectronic semiconductor component described herein in di f ferent steps of a method for its manufacturing according to a fi fth exemplary embodiment .

[0055] Identical , similar or equivalent elements are marked with the same reference signs in the figures . The figures and the proportions of the elements represented in the figures among each other are not to be considered as true to scale . Rather, individual elements may be oversi zed for better representability and / or comprehensibility . Figure 1A shows a schematic cross-sectional view of an optoelectronic semiconductor component 1 described herein according to a first exemplary embodiment .

[0056] The optoelectronic semiconductor component 1 comprises a semiconductor body 10 arranged on a carrier 80 . The semiconductor body 10 is a monolithic element . The semiconductor body 10 is produced by an epitaxial growth process of di f ferent regions along a stacking direction Y . The carrier 80 is formed with silicon, germanium, aluminum nitride or silicon nitride ( Si , Ge , Ain, SiN) . In particular, the carrier 80 provides mechanical stability for the semiconductor body 10 . Alternatively, a connection may be established to an integrated circuit board, multilayer printed circuit board, Si-backplane , etc . which may consist of various other electric or electro-optical components using appropriate interconnect and bonding technology .

[0057] The semiconductor body 10 comprises a first region 101 , a second region 102 and an active region 103 intended for the emission of electromagnetic radiation . The active region 103 is configured to emit electromagnetic radiation through an emission side 10A of the semiconductor body 10 . The first region 101 has a first conductivity and the second region 102 has a second conductivity . The first conductivity type is an n-type conductivity and the second conductivity type is a p- type conductivity .

[0058] For example , the first region 101 is doped with a first doping material and the second region 102 is doped with a second doping material . The active region 103 comprises a pn j unction for generation and / or detection of electromagnetic radiation . A plurality of deactivation regions 200 are formed in the active region 103 which are configured to locally decrease the density of charge carriers in the active region 103 . In particular, the deactivation regions 200 are each aligned with the first contact elements 51 . In other words , a proj ection of the deactivation regions 200 in the stacking direction Y of the semiconductor body 10 at least covers the first contact elements 51 . In particular, the proj ection is made onto a plane with the stacking direction Y as the surface normal .

[0059] The semiconductor body 10 comprises a rear side 10B remote from the emission side 10A. The emission side 10A is configured to improve transmission of electromagnetic radiation . In particular, the emission side 10A comprises an intentional roughening to facilitate the emission of radiation . The rear side 10B is in particular configured to provide an electrical connection of the semiconductor body 10 and / or to provide a mechanical connection to the carrier 80 .

[0060] On the emission side 10A, a plurality of first contact elements 51 is arranged on the semiconductor body 10 . By using a plurality of first contact elements 51 , a current is inj ected advantageously homogenously into the semiconductor body 10 . A second contact element 52 is arranged on the rear side 10B . The first and second contact element 51 , 52 are preferably formed with various metals and / or alloys of metals . In particular, the first and second contact elements 51 , 52 serve for example as metal mirror, solder, solderbarrier, for CTE-matching, encapsulation, connection and / or interconnect to multilayer PCBs , printed circuit boards , Si- backplane or various other interconnect technologies . Moreover, an insulating element 40 is arranged partially between the second contact element 52 and the semiconductor body 10 . The insulating element 40 is formed with an electrically insulating material , preferably a silicon oxide . A connection element 30 is arranged between the second contact element 52 and the semiconductor body 10 . The connection element 30 is configured to lower an electrical resistance between the semiconductor body 10 and the second contact element 52 and provide additional current-spreading capability by lowering the p-side sheet-resistance . The connection element 30 may consist of a multilayer structure . Preferably the connection element 30 is formed with a transparent electrically conductive material . In particular, the connection element 30 is formed with indium tin oxide .

[0061] Figure IB shows a detailed schematic cross-sectional view of an optoelectronic semiconductor component 1 according to the first exemplary embodiment .

[0062] The detailed view shows that the active region 103 comprises a quantum well region 1301 and at least one barrier region 1032 . In particular, the active region 103 comprises a double heterostructure , a single quantum well ( SQW) , or a multiple quantum well (MQW) structure for generating or detecting electromagnetic radiation .

[0063] An electrical bandgap of the quantum well region 1031 is increased in the deactivation region 200 . In other words , quantum well intermixing ( short : QWI ) occurs in the deactivation region 200 . In particular, the electrical bandgap of the quantum well region 1031 is locally increased in order to decrease the density of electrical current in the deactivation region 200 . Consequently, a reduced light generation rate occurs in the deactivation region 200 and the electric susceptibility, in particular a relative permittivity or a complex dielectric function of the deactivation region 200 is modi fied . A lower optical absorption coef ficient in the deactivation region 200 can advantageously improve the optical ef ficiency of the semiconductor component 1 .

[0064] Moreover, according to the detailed view, the insulating element 40 comprises a plurality of layers having di f ferent refractive indices in an alternating arrangement . Consequently, the insulating element 40 is configured as a dielectric mirror, in particular a Distributed Bragg Reflector ( short : DBR mirror ) . A DBR mirror has a high reflectivity for a range of wavelengths , i . e . the photonic stop-band with central frequency fo and frequency bandwidth dfo - The insulating element 40 comprises further insulating layers 401 having a di f ferent refractive index than a surrounding material .

[0065] Figure 2 shows a schematic cross-sectional view of an optoelectronic semiconductor component 1 described herein according to a second exemplary embodiment .

[0066] The second exemplary embodiment is essentially identical to the first exemplary embodiment shown in figures 1A and IB . The insulating element 40 according to the second exemplary embodiment additionally comprises a protruding region 400 . In particular, the protruding region 400 does not extend beyond the deactivation region 200 . Preferably, the volume of the protruding region 400 is smaller than the corresponding volume of the corresponding deactivation region 200 . Some finite portion of the active region 103 within the deactivation region 200 will remain and not be replaced by an insulating region 40 or protruding region 400 . This can ensure that non-radiative recombination is suppressed after introduction of semiconductor etching forming the protruding region 400 .

[0067] The insulating region 40 extends into the semiconductor body 10 in the protruding region 400 . The protruding region 400 is arranged in the deactivation region 200 . In other words , a proj ection of the protruding region 400 in the stacking direction Y of the semiconductor body 10 is completely overlapping with the deactivation region 200 .

[0068] In particular, a part of the semiconductor body 10 is removed and replaced with material of the insulating region 40 in the protruding region 400 . The protruding region 400 further decreases the density of current in the deactivation region 200 . The protruding region 400 extends completely through the active region 103 . Consequently, the protruding region 400 completely prevents the generation of light in the deactivation region 200 due to being a dielectric material . The deactivation region 200 further provides for a higher optical transparency which prevents undesired absorption of radiation inside the semiconductor body 10 . The insulating element 40 may comprise a plurality of protruding regions 400 , e . g . introduced in each deactivation regions 200 similar to embodiment 5 (not shown) .

[0069] Figures 3A to 3D show schematic cross-sectional views of an optoelectronic semiconductor component 1 described herein in di f ferent steps of a method for its manufacturing according to a first exemplary embodiment . Figure 3A shows a schematic cross-sectional view of an optoelectronic semiconductor component 1 according to a first step of its manufacturing . A semiconductor body 10 comprising a first region 101 , a second region 102 and an active region 103 is provided . The semiconductor body 10 is epitaxially grown on a growth substrate 90 .

[0070] Furthermore , a connection element 30 is arranged on a side of the semiconductor body 10 remote from the growth substrate 90 . The connection element 30 is formed with a transparent electrically conductive material . The connection element 30 completely covers the side of the semiconductor body 10 remote from the growth substrate 90 .

[0071] Figure 3B shows a schematic cross-sectional view of an optoelectronic semiconductor component 1 according to a further step of its manufacturing . A mask layer 61 is deposited on a side of the connection element 30 remote from the semiconductor body 10 . Subsequently, the mask layer 61 is partially removed to expose some regions of the connection element 30 .

[0072] Figure 3C shows a schematic cross-sectional view of an optoelectronic semiconductor component 1 according to a further step of its manufacturing . The connection element 30 is partially removed by an etching step . In particular, the connection element 30 is structured using the mask layer 61 and a first etching process and subsequent resist removal . In particular, the mask layer 61 is completely removed subsequently .

[0073] Figure 3D shows a schematic cross-sectional view of an optoelectronic semiconductor component 1 according to a further step of its manufacturing . A deactivation region 200 is introduced in the semiconductor body 10 from a side remote from the growth substrate 90 . The deactivation region 200 is in particular introduced in regions arranged adj acent to the connection element 30 . The deactivation region 200 is introduced by a di f fusion process . Furthermore , a shielding layer 62 is arranged on the semiconductor body 10 remote from the growth substrate 90 to delimit a lateral extension of the deactivation region 200 . shielding layer

[0074] The shielding layer 62 is impermeable for the material used in the di f fusion process for the deactivation region 200 . In particular, the shielding layer 62 is formed using at least one of the following materials SiO, SiN, SiON . The shielding layer 62 overlaps at least partially with the connection element 30 . For example , a lateral extension of the shielding layer 62 is larger or smaller than a lateral extension of the connection element 30 . Thus , the shielding layer 62 can be adapted to account for a lateral di f fusion of the di f fusion process for the deactivation region 200 .

[0075] Figures 4 shows a schematic cross-sectional view of an optoelectronic semiconductor component 1 described herein in a further step of a method for its manufacturing according to a second exemplary embodiment . The step according to figure 4 is essentially identical to the step shown in figure 3D . The semiconductor body 10 is partially removed before the deactivation region 200 is introduced . In particular, the semiconductor body 10 is partially removed in a separate etching process . The semiconductor body 10 is preferably removed in places where the deactivation region 200 is to be introduced . This facilitates the di f fusion of the material for forming the deactivation region 200 into the semiconductor body 10 . Alternatively, according to an additional process- flow variant (not shown) , the semiconductor body 10 is partially removed after an introduction of the deactivation region 200 .

[0076] Figure 5 shows a schematic cross-sectional view of an optoelectronic semiconductor component 1 described herein according to a third exemplary embodiment . The third exemplary embodiment is essentially identical to the second exemplary embodiment shown in figure 2 . The insulating element 400 comprises a plurality of protruding regions 400 . The protruding regions 400 are each in alignment with the deactivation regions 200 and the first contact elements 51 . The protruding regions 400 extend into the semiconductor body 10 but terminate inside the second region . In other words , the protruding regions 400 do not extend to the active region 103 .

[0077] Figure 6 shows a schematic cross-sectional view of an optoelectronic semiconductor component 1 described herein according to a fourth exemplary embodiment . The fourth exemplary embodiment is essentially identical to the first exemplary embodiment shown in figures 1A and IB . The deactivation regions 200 are introduced by a di f fusion process starting from the first region 101 . The deactivation regions 200 extend from the first region 101 into the active region 103 .

[0078] Figures 7A and 7B show schematic cross-sectional views of an optoelectronic semiconductor component 1 described herein in di f ferent steps of a method for its manufacturing according to a third exemplary embodiment . Figure 7A shows a schematic cross-sectional view of an optoelectronic semiconductor component 1 according to a first step of its manufacturing . A semiconductor body 10 comprising a first region 101 , a second region 102 and an active region 103 is provided . The semiconductor body 10 is epitaxially grown on a growth substrate 90 .

[0079] Furthermore , the semiconductor body 10 comprises a hard mask region 104 which is arranged on a side of the second region 102 remote from the active region 103 . The hard mask region 104 is epitaxially grown on the second region 102 . For example , the hard mask region 104 is formed with GaAs . Preferably, the hard mask region 104 has a thickness of at least 3 nm and of at most 15 nm . The hard mask region 104 completely covers the second region 102 . The hard mask region 104 can be impermeable for the material used in a subsequent di f fusion process for a deactivation region 200 .

[0080] Figure 7B shows a schematic cross-sectional view of an optoelectronic semiconductor component 1 according to a further step of its manufacturing . A mask layer 61 is deposited on a side of the hard mask region 104 remote from the second region 102 . The mask layer 61 is structured subsequently such that some regions of the hard mask region 104 are exposed .

[0081] Figures 8A to 8 F show schematic cross-sectional views of an optoelectronic semiconductor component 1 described herein in di f ferent steps of a method for its manufacturing according to a fourth exemplary embodiment . The process steps described in Figures 8A to 8 F are preferably performed on an optoelectronic semiconductor component 1 as described in Figure 7B . Figure 8A shows a schematic cross-sectional view of an optoelectronic semiconductor component 1 according to a further step of its manufacturing . The hard mask region 104 is partially removed by an etching step . In particular, the hard mask region 104 is structured using the mask layer 61 and a first etching process and subsequent resist removal . In particular, the mask layer 61 is removed completely subsequently . The etching can stop at an arbitrary depth inside the second semiconductor region 102 or at the interface of the second semiconductor region 102 and the hard mask region 104 .

[0082] Figure 8B shows a schematic cross-sectional view of an optoelectronic semiconductor component 1 according to a further step of its manufacturing . A deactivation region 200 is introduced in the semiconductor body 10 from a side remote from the growth substrate 90 . The deactivation region 200 is in particular introduced in regions arranged adj acent to the hard mask region 104 . The deactivation region 200 is introduced by a di f fusion process in a so called "Top-Down" di f fusion . The hard mask region 104 is impermeable for the material used in the di f fusion process for the deactivation region 200 and thus delimits a lateral extension of the deactivation region 200 .

[0083] Figure 8C shows a schematic cross-sectional view of an optoelectronic semiconductor component 1 according to a further step of its manufacturing . The hard mask region 104 is at least partially removed to avoid any optical distortions for example . Alternatively, the hard mask region 104 can also remain in the semiconductor body 10 . Figure 8D shows a schematic cross-sectional view of an optoelectronic semiconductor component 1 according to a further step of its manufacturing . A connection element 30 is arranged on a side of the second region 102 facing away from the growth substrate 90 . The connection element 30 is configured to lower an electrical resistance between the semiconductor body 10 and subsequently attached second contact elements 52 and to provide additional currentspreading capabilities by lowering the p-side sheetresistance . The connection element 30 may consist of a multilayer structure . Preferably the connection element 30 is formed with a transparent electrically conductive material . In particular, the connection element 30 is formed with indium tin oxide or indium zinc oxide .

[0084] Figure 8E shows a schematic cross-sectional view of an optoelectronic semiconductor component 1 according to a further step of its manufacturing . A mask layer 61 is arranged on a side of the connection element 30 remote from the semiconductor body 10 . The mask layer 61 is formed with a photosensitive resist material . The mask layer 61 can subsequently be structured such that it only remains in regions between deactivation regions 200 as seen in a top view of the semiconductor body 10 .

[0085] Figure 8 F shows a schematic cross-sectional view of an optoelectronic semiconductor component 1 according to a further step of its manufacturing . The semiconductor body 10 is structured using the mask layer 61 . In particular, a part of the second region 102 and the active region 103 and the first region 101 are removed after the deactivation region 200 is introduced . Figures 9A to 9F show schematic cross-sectional views of an optoelectronic semiconductor component 1 described herein in di f ferent steps of a method for its manufacturing according to a fi fth exemplary embodiment . The process steps described in Figures 9A to 9F are preferably performed on an optoelectronic semiconductor component 1 as described in Figure 7B .

[0086] Figure 9A shows a schematic cross-sectional view of an optoelectronic semiconductor component 1 according to a first step of its manufacturing . The step according to Figure 9A is essentially identical to the step shown in Figure 8A. Additionally, the semiconductor body 10 is partially removed before the deactivation region 200 is introduced . In particular, the semiconductor body 10 is partially removed in a separate etching process . The semiconductor body 10 is preferably removed in places where the deactivation region 200 is to be introduced . This facilitates the di f fusion of the material for forming the deactivation region 200 into the semiconductor body 10 in a subsequent step . The etching can stop at an arbitrary depth inside the first semiconductor region 101 .

[0087] Figure 9B shows a schematic cross-sectional view of an optoelectronic semiconductor component 1 according to a further step of its manufacturing . The step according to Figure 9B is essentially identical to the step shown in Figure 8B . Material for forming the deactivation regions 200 is di f fused into the semiconductor body 10 in a so called "Side-Wall" di f fusion . The hard mask region 104 laterally delimits the di f fusion . Figure 9C shows a schematic cross-sectional view of an optoelectronic semiconductor component 1 according to a further step of its manufacturing . The step according to

[0088] Figure 9C is essentially identical to the step shown in Figure 8C .

[0089] Figure 9D shows a schematic cross-sectional view of an optoelectronic semiconductor component 1 according to a further step of its manufacturing . The step according to Figure 9D is essentially identical to the step shown in Figure 8D . The material of the connection element 30 is also deposited in the recesses of the semiconductor body 10 .

[0090] Figure 9E shows a schematic cross-sectional view of an optoelectronic semiconductor component 1 according to a further step of its manufacturing . The step according to Figure 9E is essentially identical to the step shown in Figure 8E .

[0091] Figure 9F shows a schematic cross-sectional view of an optoelectronic semiconductor component 1 according to a further step of its manufacturing . The step according to Figure 9F is essentially identical to the step shown in Figure 8 F . In contrast to the step shown in Figure 8 F, only the connection layer 30 is structured by the mask layer 61 . The semiconductor body 10 is already partially removed . In particular, the material of the connection element 30 is removed from the recesses in the semiconductor body 10 .

[0092] In summary, Figures 7A, 7B, 8A to 8 F and 9A to 9F each illustrate an alternative process flow in which an epitaxial hard mask region 104 is already present in the semiconductor body 10 which eliminates a need to deposit an additional shielding layer 62 using a chip process . A mayor di f ference compared to the process flow shown in figures 3A to 3D is that the connection element 30 is deposited and structured after introduction of the deactivation region 200 . In addition, the structured epitaxial hard mask region 104 may or may not be removed prior to a deposition of the connection element 30 .

[0093] The invention described herein is not limited by the description given with reference to the exemplary embodiments . Rather, the invention encompasses any novel feature and any combination of features , including in particular any combination of features in the claims , even i f this feature or this combination is not itsel f explicitly indicated in the claims or exemplary embodiments .

[0094] This patent application claims the priority of the German patent application 102024102842 . 4 , the disclosure content of which is hereby incorporated by reference .

[0095] References

[0096] 1 optoelectronic semiconductor component

[0097] 10 semiconductor body

[0098] 101 first region

[0099] 102 second region

[0100] 103 active region

[0101] 104 hard mask region

[0102] 200 deactivation region

[0103] 30 connection element

[0104] 40 insulating element

[0105] 400 protruding region

[0106] 401 further insulating layer

[0107] 51 first contact element

[0108] 52 second contact element

[0109] 61 mask layer

[0110] 62 shielding layer

[0111] 80 carrier

[0112] 90 growth substrate

[0113] 10A emission side

[0114] 10B rear side

[0115] Y stacking direction

Claims

Claims1. Optoelectronic semiconductor component (1) comprising a semiconductor body (10) having a first region (101) , a second region (102) and an active region (103) intended for the emission of electromagnetic radiation through an emission side (10A) of the semiconductor body (10) , wherein- the semiconductor body (10) comprises a plurality of deactivation regions (200) and a plurality of first contact elements (51) on the emission side (10A) and a second contact element (52) on a rear side (10B) remote from the emission side ( 10A) ,- the active region (103) comprises a quantum well region (1031) and a barrier region (1032) ,- a deactivation region (200) is formed in the active region (103) , in which an electrical bandgap of the quantum well region (1031) is increased, wherein- the deactivation regions (200) are each arranged below the first contact elements (51) .

2. Optoelectronic semiconductor component (1) according to the preceding claim, wherein- the semiconductor body (10) is formed with a quaternary or penternary III-V compound semiconductor material.

3. Optoelectronic semiconductor component (1) according to one of the preceding claims, wherein- the semiconductor body (10) is formed with( AlxGai-x ) Y I n^-yAs z Pi-z and / or (AlxGai-x) YIIA-YP, wherein 0 < x < 1, 0 < y < 1, 0 < z < 1.

4. Optoelectronic semiconductor component (1) according to one of the preceding claims, wherein- a ratio of Al to Al+Ga in the quantum well region (1031) is smaller than a ratio of Al to Al+Ga in the barrier region (1032) .

5. Optoelectronic semiconductor component (1) according to one of the preceding claims, wherein- a ratio of Al to Al+Ga in the quantum well region (1031) is at most 30.

6. Optoelectronic semiconductor component (1) according to one of the preceding claims, wherein- a ratio of Al to Al+Ga in the barrier region (1032) is at least 30, preferably at least 40 and particularly preferably at least 50.

7. Optoelectronic semiconductor component (1) according to one of the preceding claims, wherein- the first region (101) has an n-conductivity and the second region (102) has a p-conductivity .

8. Optoelectronic semiconductor component (1) according to one of the preceding claims, wherein- the deactivation region (200) comprises at least one of the following materials: Zn, Te, Se, S, Si, Mg.

9. Optoelectronic semiconductor component (1) according to one of the preceding claims, wherein- a connection element (30) is arranged between the second contact element (52) and the second region (102) .

10. Optoelectronic semiconductor component (1) according to one of the preceding claims, wherein- the deactivation region (200) extends from the rear side (10B) at least to the active region (103) .

11. Optoelectronic semiconductor component (1) according to one of the preceding claims, wherein- an insulating element (40) is arranged at the rear side (10B) .

12. Optoelectronic semiconductor component (1) according to the preceding claim, wherein- the insulating element (40) comprises a plurality of layers having different refractive indices in an alternating arrangement .

13. Optoelectronic semiconductor component (1) according to one of the preceding claims 11 and 12, wherein- the insulating region (40) extends into the semiconductor body (10) in a protruding region (400) .

14. Optoelectronic semiconductor component (1) according to one of the preceding claims 11 to 13, wherein- the protruding region (400) extends completely through the active region (103) .

15. Method for manufacturing an optoelectronic semiconductor component (1) comprising the steps of:- providing a semiconductor body (10) comprising a first region (101) , a second region (102) and an active region (103) intended for the emission or detection of electromagnetic radiation through an emission side (10A) on a growth substrate (90) ,- arranging a connection element (30) on a side of the semiconductor body (10) remote from the growth substrate (90) ,- structuring the connection element (30) , and - introducing a plurality of deactivation regions (200) in the semiconductor body (10) from a side remote from the growth substrate (90) , wherein the semiconductor body (10) further comprises a plurality of first contact elements (51) on the emission side (10A) and a second contact element (52) on a rear side (10B) remote from the emission side (10A) , and wherein- the deactivation regions (200) are each arranged below the first contact elements (51) .

16. Method for manufacturing an optoelectronic semiconductor component (1) according to the preceding claim, wherein- the deactivation regions (200) are introduced before the connection element (30) is arranged.

17. Method for manufacturing an optoelectronic semiconductor component (1) according to one of the preceding claims, wherein- a part of the second region (102) and / or the active region (103) and / or the first region (101) are removed before the deactivation regions (200) are introduced.

18. Method for manufacturing an optoelectronic semiconductor component (1) according to one of the preceding claims 15 or 16, wherein - a part of the second region (102) and / or the active region(103) and / or the first region (101) are removed after the deactivation regions (200) are introduced.

19. Method for manufacturing an optoelectronic semiconductor component (1) according to one of the preceding claims, wherein- the deactivation regions (200) are introduced by diffusion or a passivation step.

20. Method for manufacturing an optoelectronic semiconductor component (1) according to one of the preceding claims, wherein - a hard mask region (104) is provided on the second region(102) of the semiconductor body (10) .

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