Heating device having electrostatic adsorption function

Abstract

A heating device (1) having an electrostatic adsorption function includes at least a support base material (2), an electrostatic adsorption electrode (4) and a heat generation layer (5) formed on the support base material (2), and an insulator layer (3) formed on the electrostatic adsorption electrode (4) and the heat generation layer (5). The heating device (1) has a terminal part (7) for supplying power from a surface opposite from a wafer placement surface, and has an electrostatic adsorption function for supplying power to an electrostatic adsorption electrode (7) on the wafer placement surface through a hole or a side surface existing at a position different from the place where the terminal part (7) is fixed.

Description

Heating device with electrostatic adsorption function

[0001] The present invention relates to a heating device with an electrostatic adsorption function, and more particularly to a wafer heating device with an electrostatic adsorption function that is suitable for use in a semiconductor wafer heating process in a semiconductor device manufacturing process that includes a temperature rise step.

[0002] In recent semiconductor device manufacturing processes, heating devices with electrostatic adsorption functions are used to electrostatically adsorb and support wafers in molecular beam epitaxy, CVD, sputtering, etching, ion implantation, etc. As the temperatures of these processes increase, the materials used for these heating devices with electrostatic adsorption functions are shifting from resin to ceramics (see Patent Documents 1 and 2), and in high-temperature processes at 200°C or higher, ceramic-integrated wafer heating devices that use a ceramic thin film as a heat generating layer are being used (see, for example, Patent Document 3).

[0003] One example of a heating device with electrostatic adsorption function used in such high-temperature processes is an electrostatic chuck made of pyrolytic boron nitride and pyrolytic carbon. This heating device has an integrated resistance heating type multilayer structure with electrostatic adsorption function, in which an insulating layer made of pyrolytic boron nitride (hereinafter, sometimes referred to as "PBN") is formed by thermal chemical vapor deposition (thermal CVD) on a (supporting) substrate made of carbon or a carbon composite material, a conductive layer made of pyrolytic graphite formed by thermal CVD is processed and bonded to a heater pattern, and the heater pattern is further covered with a dense layered protective film made of pyrolytic boron nitride or the like (see Patent Documents 4 and 5).

[0004] This resistance heating type electrostatic adsorption heater is highly pure, chemically stable, and resistant to thermal shock, making it suitable for use in a variety of fields requiring rapid temperature increases and decreases. For example, it is widely used in the semiconductor wafer manufacturing field, specifically in processes where semiconductor wafers are processed one by one at a time, with the temperature gradually changed. As mentioned above, this multi-layer electrostatic adsorption heater is entirely fabricated using the CVD method, eliminating grain boundaries and therefore degassing, and therefore not adversely affecting the process when heated in a vacuum. This has led to widespread use of this heater.

[0005] JP-A-52-67353 JP-A-59-124140 JP-A-4-124076 JP-A-5-129210 JP-A-7-10665

[0006] In recent years, high clamping force has been required in high-temperature processes at temperatures above 200°C, and high voltages of approximately DC 500 V to DC 2 kV have been applied to electrostatic chucks. However, applying high voltages in high-temperature environments makes dielectric breakdown more likely. Note that 23 in FIG. 4 indicates a location where dielectric breakdown is likely to occur. In particular, when the electrostatic chuck voltage is applied from the heater surface opposite the chuck surface or from a stepped portion of the counterbore, there has been a problem of electrical leakage occurring between the chuck voltage supply and the screw hole for securing it. Therefore, an object of the present invention is to provide a heating device with electrostatic clamping function that has high insulation performance against the electrostatic clamping power supply.

[0007] In order to solve the above-mentioned problems, the present inventors investigated the cause of the dielectric breakdown occurring in the chuck voltage supply portion of the heater surface and found that the cause was the extremely thin PBN film thickness in the counterbore portion for terminal fixation.

[0008] [1] A heating device with an electrostatic attraction function including at least a support substrate, an electrostatic attraction electrode and a heat generating layer formed on the support substrate, and an insulating layer formed on the electrostatic attraction electrode and the heat generating layer, the heating device having a terminal portion for supplying power from the surface opposite to the wafer mounting surface, and supplying power to the electrostatic attraction electrode on the wafer mounting surface through a hole or a side surface located at a position different from the position where the terminal portion is fixed. [2] The heating device with an electrostatic attraction function described in [1] above, in which the size of the hole is larger than the hole for fixing the terminal portion. [3] The heating device with an electrostatic attraction function described in [1] or [2] above, in which carbon, insulating ceramics, or carbon coated with boron nitride is embedded inside the hole. [4] The electrostatic attraction electrode and / or the heat generating layer and the power supply part provided in the hole and / or the side are made of pyrolytic graphite formed by chemical vapor deposition containing boron and / or boron carbide in a range of 0.001 to 30 wt % in terms of boron concentration, and the insulator layer is 10 ６ ~10 １５

[0013] The heating device with electrostatic adsorption function according to any one of [1] to [3] above, wherein the electrostatic adsorption electrode, the heat generating layer, and the power supply parts provided in the holes and / or sides are formed via a protective layer formed on the supporting substrate.

[0014] The heating device with electrostatic adsorption function according to any one of [1] to [3] above, wherein the protective layer is made of any one of silicon nitride, boron nitride, aluminum nitride, and pyrolytic boron nitride.

[0015] The heating device with electrostatic adsorption function according to any one of [1] to [6] above, wherein the supporting substrate is made of any one of silicon nitride sintered body, boron nitride sintered body, mixed sintered body of boron nitride and aluminum nitride, alumina sintered body, aluminum nitride sintered body, and graphite. [8] The heating device with electrostatic adsorption function according to any one of [1] to [7] above, wherein the insulator layer is made of any one of aluminum nitride, boron nitride, a mixture of aluminum nitride and boron nitride, pyrolytic boron nitride, pyrolytic boron nitride with carbon added, and pyrolytic boron nitride with carbon and silicon added. [9] The heating device with electrostatic adsorption function according to any one of [1] to [8] above, wherein the insulator layer is formed by chemical vapor deposition.

[0009] According to the present invention, it is possible to provide a heating device having an electrostatic attraction function and high insulating performance against electrostatic attraction power supply.

[0010] FIG. 1 is a conceptual diagram of a heating device having an electrostatic adsorption function manufactured in Example 1. FIG. 2 is a conceptual diagram of a heating device having an electrostatic adsorption function manufactured in Example 2. FIG. 3 is a conceptual diagram of a heating device having an electrostatic adsorption function manufactured in Example 3. FIG. 4 is a conceptual diagram of a heating device having an electrostatic adsorption function manufactured in Comparative Example 1. FIG. 5 is a conceptual diagram of a heating device having an electrostatic adsorption function manufactured in Comparative Example 2. FIG. 6 is a diagram of the heating device as seen from above.

[0011] The heating device of the present invention is a heating device having an electrostatic adsorption function for holding and fixing a semiconductor wafer, which is an object to be heated, while heating it, and is used in a CVD apparatus or sputtering apparatus in the manufacturing process of semiconductor devices, or an etching apparatus for etching a thin film that is formed.

[0012] The heating device of the present invention has an electrostatic attraction function including at least a support substrate, an electrostatic attraction electrode and a heat generating layer formed on the support substrate, and an insulator layer formed on the electrostatic attraction electrode and the heat generating layer, and is characterized by having a terminal portion for supplying power from the surface opposite to the wafer mounting surface, and supplying power to the electrostatic attraction electrode on the wafer mounting surface through a hole or side surface located at a position different from the position where the terminal portion is fixed. Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

[0013] [Heating Device with Electrostatic Adsorption Function] FIG. 1 shows an example of a heating device with electrostatic adsorption function according to the present invention. The heating device with electrostatic adsorption function (hereinafter sometimes simply referred to as the "heating device") 1 includes a disk-shaped support substrate 2 on which an electrostatic adsorption electrode 4 and a heat generating layer 5 are formed via a protective layer 6. Furthermore, an insulating layer 3 is formed on the electrostatic adsorption electrode 4 and the heat generating layer 5. The electrostatic adsorption electrode 4 is formed on the wafer-mounting surface side, while the heat generating layer 5 and the heat generating layer power supply terminal (not shown) are formed on the opposite side. An external power source, an electrostatic adsorption power supply terminal 7, and a heat generating layer power supply terminal (not shown) are connected to an external power source via separate conductive fixing terminal bolts 8. The electrostatic adsorption power supply terminal 7 and the heat generating layer power supply terminal are provided on the electrostatic adsorption electrode 4 and the heat generating layer 5, respectively, and electricity is supplied through these terminals. The dotted arrow 9 indicates the power supply route from the electrostatic adsorption power supply terminal 7 on the heat generating layer surface 22 to the electrostatic adsorption electrode 4 on the wafer-mounting surface 21, and the conductive layer to which power is supplied is referred to as the power supply section 11.

[0014] When a semiconductor wafer is heated, the wafer is attracted and fixed onto the insulating layer 3 on the front side of the support substrate 2 by the electrostatic attraction electrode 4, and is heated by the conductive heating layer 5 on the back side of the support substrate 2. Here, the heating device with electrostatic attraction function of the present invention shown in Figure 1 has a hole with an inner diameter D1 formed therein, and a fixing terminal bolt 8 is disposed therein. The fixing terminal bolt 8 is used to fix the electrostatic attraction power supply terminal 7. The heating device of the present invention has the electrostatic attraction power supply terminal 7 on the side opposite to the side on which the wafer is placed, and when power is supplied to this terminal, the supplied electricity flows through the power supply section 11 along the power supply route 9.

[0015] Furthermore, the heating device of the present invention preferably has a hole with an inner diameter D2 in a portion of the support substrate 2 separate from the hole, with the relationship D2 > D1. That is, the size of the hole with inner diameter D2 is preferably larger than the hole (inner diameter D1) for fixing the power supply terminal. Specifically, as shown in Fig. 6, which shows the heating device 1 from above, a preferred embodiment has a hole with an inner diameter D1 and a hole with an inner diameter D2 arranged therein.

[0016] In conventional heating devices, current is supplied from the electrostatic attraction power supply terminal 7 through a power supply route that runs along a hole with an inner diameter D1 (see FIG. 4). Alternatively, the electrostatic attraction power supply terminal 7 is disposed below the head of the upper bolt 8 for the fixing terminal, and power is supplied from this power supply terminal (see FIG. 5). However, with such a conventional power supply method, dielectric breakdown is likely to occur in the hole with an inner diameter D1. In contrast, in the heating device of the present invention, power is supplied to the electrostatic attraction electrode 4 on the wafer mounting surface through a hole or side surface that is located at a position different from the location where the power supply terminal is fixed, making dielectric breakdown less likely to occur (see FIGS. 1 to 3).

[0017] Furthermore, it is preferable that the hole having the inner diameter D2 is filled with carbon, insulating ceramics, or carbon coated with boron nitride. By adopting such an embodiment, heat is easily cooled without being directly transferred to the wafer, and the hole (space) is eliminated, making it easier to make the temperature of the wafer mounting surface more uniform. Each component of the heating device 1 of the present invention will be specifically described below.

[0018] <Supporting substrate> The material constituting the supporting substrate 2 is not particularly limited, but is preferably made of any of silicon nitride sintered body, boron nitride sintered body, mixed sintered body of boron nitride and aluminum nitride, alumina sintered body, aluminum nitride sintered body, and graphite. These materials have stable physical properties even in the medium to high temperature range of 500 to 800°C, and graphite is particularly desirable because it is stable up to high temperatures of 2000°C or higher. In addition, the shape of the supporting substrate 2 is not particularly limited, and may be, for example, a disk, a cylinder, or a disk or cylinder with protrusions or recesses.

[0019] <Protective Layer> The protective layer 6 formed on the support substrate 2 prevents impurities, gases, and the like contained in the support substrate 2 from affecting the subsequent manufacturing process. When the support substrate 2 is made of, for example, graphite, such a protective layer 6 is essential for ensuring insulation and is also necessary for preventing oxidation. On the other hand, when the support substrate 2 is an insulator, the protective layer does not necessarily need to be formed, but forming the protective layer 6 is preferable because it can prevent contamination by the above-mentioned impurities and the like.

[0020] The material of the protective layer 6 is preferably stable up to high temperatures, and examples thereof include silicon nitride, boron nitride, pyrolytic boron nitride, and aluminum nitride. Regarding the thickness of the protective layer 6, if it is too thick, it will be prone to peeling due to the difference in thermal expansion with the supporting substrate, while if it is too thin, impurities, gases, etc. may permeate through pinholes, adversely affecting the subsequent manufacturing process. From the above viewpoints, the thickness of the protective layer 6 is preferably in the range of 10 to 500 μm, and more preferably 30 to 300 μm.

[0021] <Electrostatic Adsorption Electrode and Heat-Generating Layer> The electrostatic adsorption electrode 4, the heat-generating layer 5, and the power supply unit 11 are formed on the support substrate via a protective layer 6. The material is preferably pyrolytic graphite containing boron and / or boron carbide in a boron concentration range of 0.001 to 30 wt. %. The electrostatic adsorption electrode 4, the heat-generating layer 5, and the power supply unit 11 thus formed have an anchoring effect. Therefore, the insulating layer 3 formed thereon adheres and bonds well, preventing peeling even with repeated temperature increases and decreases. Furthermore, pyrolytic graphite containing boron and / or boron carbide in the above ranges has the property of reducing the temperature dependence of resistivity. Therefore, using this material for the heating layer also offers the advantage of improved temperature controllability. If the boron concentration is 0.001% by weight or more, a sufficient anchoring effect can be obtained, while if the boron concentration is 30% by weight or less, excessive grain growth is prevented, a sufficient film can be formed, and the film can fully function as an electrostatic attraction electrode or a heat generating layer.

[0022] Although there are no particular limitations on the thickness of the electrostatic attraction electrode 4, the heat generating layer 5, and the power supply portion 11, each is preferably in the range of 10 to 500 μm, and more preferably in the range of 30 to 300 μm. If the electrostatic attraction electrode and the heat generating layer are of this thickness, an object to be heated, such as a wafer, can be electrostatically attracted and heated in an appropriate manner.

[0023] <Insulating Layer> The insulating layer 3 formed on the electrostatic attraction electrode 4 and the heat generating layer 5 is ６ ~10 １５ Preferably, the insulator layer 3 has an electrical resistivity of Ωcm. If an insulator layer having an electrical resistivity in this range is formed, the resistance value will be appropriate in the medium- to high-temperature range from 500°C to 800°C, damage to the device due to leakage current will not occur, and a sufficient electrostatic chucking force will be obtained. Such insulator layer 3 can preferably be made of any of aluminum nitride, boron nitride, a mixture of aluminum nitride and boron nitride, pyrolytic boron nitride, pyrolytic boron nitride with carbon added, and pyrolytic boron nitride with carbon and silicon added.

[0024] The thickness of the insulator layer 3 is not particularly limited, but is preferably in the range of 50 to 500 μm, and particularly preferably in the range of 70 to 300 μm. Generally, when an insulator layer with a thickness of 50 to 500 μm is formed, if the bonding surfaces of the electrostatic attraction electrode or the heat-generating layer are smooth, they tend to peel off due to differences in thermal expansion coefficients. However, in the present invention, the electrostatic attraction electrode 4, the heat-generating layer 5, and the power supply part 11, which have strong anchoring effects, are formed, so that peeling of the insulator layer 3 is prevented even when the temperature is repeatedly raised and lowered. Furthermore, by using an insulator layer with the above thickness, the layer has sufficient insulating power and an appropriate electrical resistivity even at medium to high temperatures of 500 to 800°C, thereby maintaining sufficient electrostatic attraction force.

[0025] <Method for Manufacturing the Heating Device> The heating device having an electrostatic attraction function according to the present invention can be manufactured by any method, but chemical vapor deposition is a suitable method. For example, to form the electrostatic attraction electrode and the heat-generating layer, methane gas is reacted under conditions of 1000 to 2500°C and 1 to 10 Torr, and boron halide is introduced into the same reaction chamber at a boron concentration of 0.001 to 30 wt %. A pyrolytic graphite layer is then formed on a support substrate, for example, made of graphite having a protective layer on its surface. This pyrolytic graphite layer is then processed into the pattern of the electrostatic attraction electrode 4 on the front side of the substrate and the pattern of the heat-generating layer 5 on the back side. Forming the electrostatic attraction electrode 4 and the heat-generating layer 5 from pyrolytic graphite containing boron and / or boron carbide in a boron concentration of 0.001 to 30 wt % by chemical vapor deposition in this way results in the formation of minute irregularities on the surface, which provides an excellent anchoring effect and effectively prevents peeling of the insulating layer 3 formed thereon.

[0026] The protective layer and the insulating layer are also preferably formed by chemical vapor deposition in the same manner. Each layer formed by chemical vapor deposition has high purity and is suppressed from peeling and particle generation. As mentioned above, the protective layer is not essential depending on the support substrate. In this case, the electrostatic attraction electrode 4, the heat generating layer 5, and the power supply part 11 may be formed directly on the support substrate 2 as shown in Figure 2, and a heating device with electrostatic attraction function having the same configuration as Figure 1 can be obtained.

[0027] In the heating device with electrostatic attraction function of the present invention, the electrostatic attraction electrode 4, the heat generating layer 5, and the power supply part 11 exert an anchoring effect, and the insulating layer 3 formed thereon does not peel off. In particular, by forming the electrostatic attraction electrode and the heat generating layer from pyrolytic graphite containing boron and / or boron carbide in a boron concentration ranging from 0.001 to 30 wt %, a stronger anchoring effect is exerted and peeling of the insulating layer is suppressed, which is preferable.

[0028] Furthermore, the temperature dependency of the resistivity of the heating layer 5 and the power supply part 11 is small, which also provides the effect of good temperature controllability. That is, the temperature distribution is good, the thermal shock resistance is excellent, and peeling of the insulator layer 3 does not occur even when the temperature is repeatedly increased or decreased. Furthermore, even in the medium-high temperature range of 500 to 800°C, the resistance value is moderate and the electrostatic adsorption force is sufficient, and there is no damage to the device due to leakage current, no dielectric breakdown occurs, and the heating device has an electrostatic adsorption function that can be used stably even when the temperature is rapidly increased or decreased. Therefore, if this heating device is used to heat wafers in device manufacturing processes, the device yield will be improved and it will be able to be used stably for a long period of time.

[0029] The present invention will be specifically described below with reference to examples and comparative examples, but the present invention is not limited to these. It should be noted that the present invention is not limited to the embodiments described herein. These embodiments are merely illustrative, and any configuration that is substantially identical to the technical idea described in the claims of the present invention and that exhibits similar effects is included within the technical scope of the present invention. For example, the shapes of the supporting substrate, the electrostatic attraction electrode, and the heat generating layer are not limited to those shown in FIGS. 1 and 2 .

[0030] Example 1: A graphite substrate with a diameter of 200 mm and a thickness of 15 mm was prepared. Ammonia and boron trichloride were reacted at 1800°C and 100 Torr to form a protective layer of pyrolytic boron nitride on the substrate. Methane gas was then pyrolyzed on the protective layer at 2200°C and 5 Torr. Boron halide (boron trichloride) was then introduced into the same reaction chamber at a boron concentration ranging from 0.001 to 30 wt % to form a 100 μm-thick pyrolytic graphite layer containing a mixture of boron and boron carbide. The front side of this pyrolytic graphite layer was processed into an electrode pattern to form an electrostatic chucking electrode, and the back side was processed into a heater pattern to form a heat-generating layer. The electrode pattern from the electrostatic chucking power supply terminal to the electrostatic chucking electrode was formed via a hole with a larger diameter than the electrostatic chucking power supply terminal, rather than passing through the hole in the electrostatic chucking power supply terminal as shown in Figure 1 . Then, ammonia, boron trichloride, and methane were reacted on both surfaces at 1600°C and 5 Torr to form a 200 μm thick carbon-containing pyrolytic boron nitride insulator layer, and a wafer heating device with electrostatic adsorption function was fabricated. The electrical resistivity of this insulator layer was 10 ８ ~10 １３ The resistance was Ωcm.

[0031] The wafer heating device fabricated as described above was heated from 100°C to 1000°C for 1 minute, and then held at 1000°C for 10 minutes. After that, a voltage of ±1 kV was applied to the electrostatic attraction electrode for 2 minutes, and the temperature was then raised and lowered from 1000°C to 100°C at a rate of 5 minutes, repeating this cycle 10,000 times (heating and cooling test). No dielectric breakdown or peeling was observed at the electrodes or at the junctions between the heating layer and the insulator layer, and the temperature distribution on the wafer at 500°C remained unchanged at ±10°C.

[0032] Example 2 A heating device with an electrostatic chucking function was fabricated in the same manner as in Example 1, except that a PBN-coated, insulated carbon cylinder was inserted into a hole with a diameter larger than that of the electrostatic chucking power supply terminal, as shown in Figure 2. That is, an insulating ceramic was inserted into a large-diameter hole (inner diameter D2) located at a position separate from the location where the power supply terminal was fixed, and power was supplied to the electrostatic chucking electrode on the wafer mounting surface. When the same experiment as in Example 1 was performed on the resulting heating device, no dielectric breakdown or peeling was observed at the junctions between the electrode and the heating layer and the insulator layer, and the temperature distribution on the wafer at 500°C remained unchanged at ±8°C.

[0033] Example 3 A heating device with an electrostatic attraction function was fabricated in the same manner as in Example 1, except that, as shown in Fig. 3, an electrode pattern from the electrostatic attraction power supply terminal to the electrostatic attraction electrode was formed via the side surface of the base material. That is, power was supplied to the electrostatic attraction electrode on the wafer mounting surface through the side surface of the support base material, which was a position different from the position where the power supply terminal was fixed. When the obtained heating device was subjected to the same experiment as in Example 1, no dielectric breakdown or peeling was observed at the junctions of the electrode, heating layer, and insulator layer, and the temperature distribution on the wafer at 500°C remained unchanged at ±10°C.

[0034] 4, an electrode pattern was formed so that power could be supplied from the electrostatic attraction power supply terminals on the heater surface to the electrostatic attraction electrode via the inside of the electrostatic attraction power supply terminal holes. When the obtained heating device was subjected to the same tests as in Example 1, the temperature distribution on the wafer at 500°C before the test was ±10°C. However, in a temperature rise / fall test, insulation breakdown occurred after about 500 cycles, and voltage could no longer be applied to the electrostatic attraction electrode, making wafer attraction impossible.

[0035] 5, a wafer heating device having an electrostatic attraction function was fabricated in the same manner as in Example 1, except that an electrostatic attraction power supply terminal 7 was formed inside the counterbore and an electrode pattern was formed from that to the electrostatic attraction electrode. When the obtained heating device was subjected to the same tests as in Example 1, the temperature distribution on the wafer at 500°C before the test was ±10°C, but in the temperature rise / fall test, insulation breakdown occurred after about 500 cycles, and voltage could no longer be applied to the electrostatic attraction electrode, making wafer attraction impossible.

[0036] According to the present invention, since power is not supplied to the hole and the countersunk portion where the fixed terminal bolt is placed, the power failure due to insulation breakdown is avoided, and further, the electrostatic attraction electrode is less likely to peel off inside the hole and on the side, the anchoring effect of the electrostatic attraction electrode and the heat generating layer is excellent, and the boron added to the electrostatic attraction electrode and the heat generating layer chemically bonds with the nitrogen in the protective layer and the insulator layer, thereby strengthening the bond and eliminating the problem of peeling off of the insulator layer. Furthermore, even in the medium-high temperature range of 500 to 800°C, a heating device with an electrostatic attraction function can be obtained that has a moderate resistance value and sufficient electrostatic attraction force, and that does not cause damage to the device due to leakage current.

[0037] REFERENCE SIGNS LIST 1 Heating device with electrostatic adsorption function 2 Support substrate 3 Insulator layer 4 Electrode for electrostatic adsorption 5 Heat generating layer 6 Protective layer 7 Power supply terminal for electrostatic adsorption 8 Bolt for fixed terminal 9 Power supply route from power supply terminal for electrostatic adsorption to electrode for electrostatic adsorption 10 Carbon substrate or PBN coated carbon for filling hole 11 Power supply part 21 Wafer mounting surface 22 Heat generating layer surface 23 Dielectric breakdown

Claims

1. A heating device with an electrostatic attraction function that includes at least a support substrate, an electrostatic attraction electrode and a heat generating layer formed on the support substrate, and an insulating layer formed on the electrostatic attraction electrode and the heat generating layer, and that has a terminal part that supplies power from the surface opposite to the wafer mounting surface, and supplies power to the electrostatic attraction electrode on the wafer mounting surface through a hole or side surface that is located in a position different from the place where the terminal part is fixed.

2. A heating device with an electrostatic adsorption function according to claim 1, wherein the size of the hole is larger than the size of the hole for fixing the terminal portion.

3. A heating device with an electrostatic adsorption function according to claim 1 or 2, wherein carbon, insulating ceramics, or carbon coated with boron nitride is embedded inside the hole.

4. The electrostatic attraction electrode and / or the heat generating layer and the power supply part provided in the hole and / or the side are made of pyrolytic graphite formed by chemical vapor deposition containing boron and / or boron carbide in a boron concentration range of 0.001 to 30 wt %, and the insulator layer is 10 ６ ~10 １５ 3. The heating device with electrostatic attraction function according to claim 1, wherein the heating device has an electrical resistivity of Ωcm.

5. A heating device with electrostatic adsorption function according to claim 1 or 2, wherein the electrostatic adsorption electrode and / or heat generating layer and the power supply part provided in the hole and / or side surface are formed via a protective layer formed on the supporting substrate.

6. The heating device with electrostatic adsorption function according to claim 5, wherein the protective layer is made of any one of silicon nitride, boron nitride, aluminum nitride and pyrolytic boron nitride.

7. A heating device with electrostatic adsorption function according to claim 1 or 2, wherein the support substrate is made of any one of silicon nitride sintered body, boron nitride sintered body, mixed sintered body of boron nitride and aluminum nitride, alumina sintered body, aluminum nitride sintered body, and graphite.

8. A heating device with electrostatic adsorption function as described in claim 1 or 2, wherein the insulator layer is made of any one of aluminum nitride, boron nitride, a mixture of aluminum nitride and boron nitride, pyrolytic boron nitride, pyrolytic boron nitride with carbon added, and pyrolytic boron nitride with carbon and silicon added.

9. A heating device with an electrostatic attraction function according to claim 1 or 2, wherein the insulating layer is formed by chemical vapor deposition.

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