Substrate processing apparatus

Abstract

A substrate processing apparatus according to an embodiment of the present invention comprises: a process chamber including a reaction space for processing at least one substrate; a gas spray unit installed above the process chamber in order to spray a process gas into the reaction space; a substrate support unit including a susceptor plate, which has at least one seating groove formed therein, and at least one satellite, which is disposed in the at least one seating groove so as to mount the at least one substrate and can rotate while floating above the seating groove by means of at least one rotation gas supplied via the at least one seating groove; a rotation sensor for measuring the rotation speed of the at least one satellite; and a control unit which, in order to individually regulate the rotation speed of the at least one satellite, regulates the flow rate of the at least one rotation gas supplied via the at least one seating groove.

Description

substrate processing device

[0001] The present invention relates to a device for semiconductor manufacturing, and more particularly, to a substrate processing device.

[0002] Typically, to manufacture semiconductor devices, various processes are performed in a substrate processing device that includes a vacuum-atmosphere process chamber. For example, processes such as loading a substrate into the process chamber and depositing or etching a thin film on the substrate may be performed. Within the substrate processing device, the substrate is supported by a substrate supporter installed within the process chamber, and process gases are supplied to the substrate through a gas injection unit within the process chamber, allowing the substrate to be processed.

[0003] Recently, substrate processing devices that process multiple substrates by mounting them on a single substrate support have been utilized to increase productivity. These devices rotate the substrate support to orbit the substrates, while individually rotating each substrate to ensure uniform substrate processing. To achieve this rotation, a technology has been applied that suspends the substrates using satellites and rotates the satellites.

[0004] In these substrate processing devices, the rotation of the satellite is performed by supplying rotation gas to the satellite. Conventionally, the flow rate of the rotation gas is controlled by calculating the rotation value of the satellite and comparing it with a target value. However, since the rotation value of the satellite is not calculated in real time, but is calculated once per rotation of the substrate support, controlling the flow rate of the rotation gas based on this rotation value has the problem of very large flow rate fluctuations, a very large range of flow rate fluctuations, and poor reproducibility.

[0005] The present invention aims to solve various problems, including the above-described problems, by providing a substrate processing device that can reduce rapid changes in the flow rate of rotating gas and increase the uniformity of the rotation speed of a substrate rotated by a satellite. However, these tasks are exemplary and the scope of the present invention is not limited thereby.

[0006] According to an embodiment of the present invention for solving the above problem, a substrate processing device comprises: a process chamber including a reaction space for processing at least one substrate; a gas injection unit installed on an upper portion of the process chamber for injecting a process gas into the reaction space; a susceptor plate installed in the process chamber opposite to the gas injection unit and having at least one settling groove formed therein; at least one satellite disposed in the at least one settling groove so as to be mounted with the at least one substrate and capable of floating and rotating from the settling groove by at least one rotating gas supplied through the at least one settling groove; and a shaft coupled to the susceptor plate and rotatably installed in the process chamber so as to orbit the substrate; a rotation sensor for measuring a rotational speed of the at least one satellite; and a rotational speed sensor for controlling a flow rate of the at least one rotating gas supplied to the at least one settling groove to control the rotational speed of the at least one satellite, wherein a first flow rate of the rotating gas is continuously supplied while a second flow rate of the rotating gas is calculated based on a rotational speed value calculated from the rotational speed. Additionally, a control unit is included to control the supply of at least one rotating gas.

[0007] According to the above substrate processing device, the control unit can compare the preset rotation speed value with the rotation speed value calculated from the rotation speed and control the supply of the additionally supplied second flow rate of the rotation gas at predetermined intervals using a PID control method.

[0008] According to the above substrate processing device, the control unit can calculate the rotation speed value each time the substrate support unit rotates once, and can calculate the second flow rate each time the substrate support unit rotates once.

[0009] According to the above substrate processing device, the device includes at least one flow regulator for controlling the flow rate of the at least one rotating gas supplied to the at least one settling groove, and the control unit can control the flow rate of the at least one rotating gas by controlling the at least one flow regulator.

[0010] According to the substrate processing device, the at least one settling groove includes a plurality of settling grooves, the at least one satellite includes a plurality of satellites that are respectively settling in the plurality of settling grooves, the at least one rotating gas includes a plurality of rotating gases that are respectively supplied to the plurality of settling grooves, and the control unit can respectively receive rotational speeds of the plurality of satellites from the rotation sensor and control the flow rates of the plurality of rotating gases based on rotational speed values ​​of the plurality of satellites calculated from the rotational speeds.

[0011] According to the above substrate processing device, the control unit can compare the preset rotation speed value with the rotation speed values ​​of the plurality of satellites and control the supply of the additionally supplied second flow rate of rotation gas at predetermined intervals using a PID control method.

[0012] According to the above substrate processing device, the first flow rate may be in the range of 80 to 90% of the total flow rate of the rotating gas.

[0013] According to the above substrate processing device, the second flow rate may be in the range of 10 to 20% of the total flow rate of the rotating gas.

[0014] According to an embodiment of the present invention, a substrate processing device configured as described above can reduce rapid changes in the flow rate of the rotating gas, thereby improving the uniformity of the rotation speed of the substrate. Of course, the scope of the present invention is not limited by these effects.

[0015] FIG. 1 is a cross-sectional view schematically showing a substrate processing device according to one embodiment of the present invention.

[0016] Fig. 2 is a schematic perspective view showing a substrate support portion of the substrate processing device of Fig. 1.

[0017] Figure 3 is a schematic plan view showing a gas injection plate in the substrate support of Figure 2.

[0018] Fig. 4 is a schematic bottom view showing a gas injection unit of the substrate processing device of Fig. 1.

[0019] FIG. 5 is a partial perspective view schematically illustrating measurement of the rotation speed of a satellite in a substrate processing device according to some embodiments of the present invention.

[0020] FIG. 6 shows a method for controlling the rotation speed of a satellite using a substrate processing device according to some embodiments of the present invention.

[0021] FIG. 7 is a graph showing changes in the rotational gas flow rate when controlling the satellite rotation speed according to some embodiments of the present invention.

[0022] FIG. 8 is a graph showing changes in satellite rotation speed when controlling satellite rotation speed according to some embodiments of the present invention.

[0023] Figure 9 is a graph showing changes in the rotational gas flow rate when controlling the satellite rotation speed in a comparative example.

[0024] Figure 10 is a graph showing the change in satellite rotation speed when controlling satellite rotation speed in a comparative example.

[0025] Hereinafter, various preferred embodiments of the present invention will be described in detail with reference to the attached drawings.

[0026] The embodiments of the present invention are provided to more fully explain the present invention to those skilled in the art. The following embodiments may be modified in various ways, and the scope of the present invention is not limited to the following embodiments. Rather, these embodiments are provided to more faithfully and completely convey the spirit of the present invention to those skilled in the art. In addition, the thickness and size of each element in the drawings may be exaggerated for convenience and clarity of explanation.

[0027] FIG. 1 is a schematic cross-sectional view showing a substrate processing device (200) according to one embodiment of the present invention, FIG. 2 is a schematic perspective view showing a substrate support portion of the substrate support device (200) of FIG. 1, FIG. 3 is a schematic plan view showing a gas injection plate in the substrate support portion (230) of FIG. 2, and FIG. 4 is a schematic bottom view showing a gas injection portion of the substrate processing device (200) of FIG. 1.

[0028] Referring to FIGS. 1 to 4, the substrate processing device (200) may include a process chamber (210), a gas injection unit (220), a substrate support unit (230), and a control unit (280).

[0029] The process chamber (210) may include a reaction space (212) for processing at least one substrate (S) therein. For example, the process chamber (210) may be configured to process a plurality of substrates (S) within the reaction space (212). Furthermore, the process chamber (210) is configured to maintain airtightness, and may be connected to a vacuum pump (not shown) through at least one exhaust port (216) to discharge a process gas within the reaction space (212) and control a vacuum level within the reaction space (212).

[0030] The process chamber (210) may be provided in various shapes, and may include, for example, a chamber body (213) having an open upper portion and a chamber lid (214) coupled to the chamber body (213). Furthermore, a sealing member for vacuum sealing, such as an O-ring, may be coupled between the chamber body (213) and the chamber lid (214). Furthermore, an openable gate (not shown) may be installed on a side wall of the chamber body (213) to allow movement of the substrates (S).

[0031] The gas injection unit (220) may be installed at the top of the process chamber (210) to inject a process gas into the reaction space (212). For example, the gas injection unit (220) may inject a process gas supplied from the outside of the process chamber (210) into the reaction space (212). More specifically, the gas injection unit (220) may be installed at the top of the process chamber (210), for example, at the chamber lid (214), to inject a process gas onto at least one substrate (S), for example, a plurality of substrates (S), mounted on a substrate support unit (230).

[0032] In some embodiments, the gas injection unit (220) may include a plurality of gas injection units arranged in a circumferential direction, such as a first source gas injection unit (224a), a second source gas injection unit (224b), a reaction gas injection unit (226), and a plurality of purge gas injection units (228a, 228b, 228c), as illustrated in FIG. 4. The purge gas injection unit (228a) may be arranged between the first source gas injection unit (224a) and the second source gas injection unit (224b), the purge gas injection unit (228b) may be arranged between the first source gas injection unit (224a) and the reaction gas injection unit (226), and the purge gas injection unit (228c) may be arranged between the second source gas injection unit (224b) and the reaction gas injection unit (226).

[0033] Furthermore, injection holes for injecting the first source gas may be formed in the first source gas injection unit (224a), injection holes for injecting the second source gas may be formed in the second source gas injection unit (224b), injection holes for injecting the reaction gas may be formed in the reaction gas injection unit (226), and injection holes for injecting the purge gas may be formed in the purge gas injection units (228a, 228b, 228c).

[0034] Optionally, a curtain gas injection unit (222) may be installed at the center of the gas injection unit (220). The curtain gas injection unit (222) may be provided with injection holes for injecting curtain gas to prevent mixing of the source gas and the reaction gas. For example, the purge gas and the curtain gas may include an inert gas.

[0035] In some embodiments, depending on the number of source gases, one of the first source gas injection unit (224a) and the second source gas injection unit (224b) may be omitted. For example, when forming a multilayer thin film or a thin film including two or more types of metals, both the first source gas injection unit (224a) and the second source gas injection unit (224b) are required, but when forming a single layer thin film or a thin film including one type of metal, one of the first source gas injection unit (224a) and the second source gas injection unit (224b) may be omitted.

[0036] The substrate support (230) may be installed in the process chamber (210) facing the gas injection unit (220) to support at least one substrate (S). Furthermore, the substrate support (230) may be installed in the process chamber (210) to be rotatable. For example, the substrate support (230) may be coupled to the process chamber (210) using a bellows structure (not shown) so that the process chamber (210) can be kept airtight when the shaft (160) is raised and / or rotated. The substrate support (230) may also be called a substrate holder or a susceptor in terms of its function.

[0037] In some embodiments, the substrate support (230) may include a susceptor plate (110), at least one satellite (130), a shaft (160), a pin support unit (170), and / or a plurality of lift pins (180).

[0038] The susceptor plate (110) may be installed in the process chamber (210) facing the gas injection unit (220). Furthermore, at least one mounting groove (120), for example, a plurality of mounting grooves (120), may be formed on the susceptor plate (110). For example, the mounting grooves (120) may be formed in a pocket-shaped shape on the upper surface of the susceptor plate (110) for mounting the substrates (S). The mounting grooves (120) may be formed in an appropriate number considering the size and processing speed of the susceptor plate (110), and may be changed to an appropriate number without being limited to the number illustrated in FIG. 2.

[0039] In some embodiments, the mounting grooves (120) may each have supporting grooves (124) formed therein. Through holes (1242) penetrating the susceptor plate (110) may be formed on the bottom surface of the supporting grooves (124). A portion of the pin supporting unit (170) may be elevated through the through holes (1242).

[0040] In some embodiments, the susceptor plate (110) may be formed with gas lines (112, 114) connected to the mounting grooves (120), and the mounting grooves (120) may be formed with gas outlets connected to the gas lines (112, 114). For example, a floating gas for floating the substrates (S) may be supplied to the gas outlets of the mounting grooves (120) through the gas lines (112), and a rotating gas for rotating the substrates (S) may be supplied to the gas outlets of the mounting grooves (120) through the gas lines (114). The rotating gas may also be referred to as a rotating gas.

[0041] The shaft (160) may be coupled to the susceptor plate (110). For example, the shaft (160) may be coupled to the bottom or center of the susceptor plate (110) using a coupling structure and may extend downward. Furthermore, the shaft (160) may be installed in the process chamber (210) so as to be rotatable so that the substrates (S) may rotate. Optionally, the shaft (160) may be able to be lifted so as to move the substrates (S) up and down. For example, a driving device (not shown) may be coupled to the shaft (160), and the shaft (160) may be rotated or moved up and down by the driving device. As the shaft (160) rotates or moves up and down, the susceptor plate (110) may also be rotated or moved up and down.

[0042] In some embodiments, the shaft (160) may be formed with gas lines (162) through which floating gas moves and gas lines (164) through which rotating gas moves. The gas lines (162, 164) are formed separately from each other within the shaft (160) and may be connected to a gas supply unit (not shown) outside the process chamber (210) to receive floating gas and rotating gas. The gas lines (162, 164) and the gas supply unit may be connected by a separate sealing device, such as a magnetic sealing device, so as to maintain the connection even when the shaft (160) rotates.

[0043] Furthermore, the gas lines (162, 164) may be connected to the gas lines (112) formed in the susceptor plate (110) and connected to the settling grooves (120). For example, the gas line (162) through which the floating gas moves may be formed as a single line within the shaft (160) and branched into gas lines (112) so as to be respectively connected to the settling grooves (120) within the susceptor plate (110). The gas lines (164) through which the rotating gas moves may be formed to be separated by the number of settling grooves (120) within the shaft (160) and may be respectively connected to the settling grooves (120) within the susceptor plate (110) through the gas lines (114).

[0044] In some embodiments, the gas line (162) may be supplied with a floating gas through a gas pipe (1622) outside the process chamber (210), and at least one gas line (164) may be supplied with a rotating gas through at least one gas pipe (1642). The gas pipe (1622) may be provided with a flow regulator (1626) for controlling the flow rate of the floating gas and valves (1624) for opening and closing the pipe, and at least one gas pipe (1642) may be provided with at least one flow regulator (1646) for controlling the flow rate of the rotating gas and valves (1644) for opening and closing the pipe.

[0045] At least one satellite (130) is placed in at least one mounting groove (120) so that at least one substrate (S) is mounted thereon, and can float and rotate from the mounting groove (120) by at least one rotating gas supplied through the at least one mounting groove (120).

[0046] For example, a plurality of satellites (130) may be respectively arranged in a plurality of mounting grooves (120). The number of satellites (130) may be provided to be the same as the number of mounting grooves (120). The satellites (130) may be arranged to float on the mounting grooves (120), and the substrates (S) may be respectively mounted on the upper surfaces of the satellites (130) and may float together with the satellites (130).

[0047] For example, the satellites (130) can be supplied with floating gas from the settling grooves (120) and float from the settling grooves (120), and can be supplied with rotating gas from the settling grooves (120) and rotate in a floating state. For example, the floating gas and rotating gas can be supplied through the gas lines (112, 114) of the susceptor plate (110) and can be supplied to the satellites (130) through the gas outlets in the settling grooves (120), respectively.

[0048] The satellites (130) can be rotated relative to the susceptor plate (110) by the rotating gas supplied through the settling grooves (120). Accordingly, the satellites (130) can be rotated relative to the susceptor plate (110) to rotate the substrates (S) relative to the susceptor plate (110). This rotation of the satellites (130) or the substrates (S) can be referred to as rotation, as it is a rotation relative to the susceptor plate (110).

[0049] In some embodiments, the satellites (130) may include a sawtooth-shaped rotation pattern to facilitate the transmission of rotational force by the rotating gas. Additionally, to control the stopping of the satellites (130), the satellites (130) may be supplied with stopping gas in the opposite direction of rotation from the settling grooves (120).

[0050] In some embodiments, the satellite (130) may be rotated while suspended from the substrate mounting portion (120) by a gas that is ejected in a spiral shape from the substrate mounting portion (120).

[0051] In some embodiments, a guide pin (126) may be coupled to the center of the mounting grooves (120) to guide the center of the satellites (130). A guide groove (not shown) to which the guide pin (126) is flexibly coupled may be formed on the back surface of the satellites (130). Accordingly, the satellites (130) may be floated or rotated without being separated from the susceptor plate (110) while being coupled to the guide pin (126).

[0052] In some embodiments, gas distribution plates (140) may be coupled between the susceptor plate (110) and the satellites (130). For example, the gas distribution plates (140) may be coupled respectively on the mounting grooves (120), and the satellites (130) may be respectively mounted on the gas distribution plate (140). A body through hole (141) may be formed in the gas distribution plate (140) to communicate with a support groove (124) in the mounting groove (120). For example, the body through hole (141) may be formed in the center of the gas distribution plate (140).

[0053] For example, the gas distribution plate (140) can distribute floating gas and / or rotating gas supplied from the settling grooves (120) and supply them to the satellite (130). A distribution path (143) for distributing floating gas may be formed on the back surface of the gas distribution plate (140), and a plurality of through holes (142) for supplying floating gas to the front surface of the gas distribution plate (140) may be formed in the distribution path (143). Furthermore, a distribution path (145) for distributing rotating gas may be formed on the back surface of the gas distribution plate (140), and at least one through hole (144) for supplying rotating gas to the front surface of the gas distribution plate (140) may be formed in the distribution path (145).

[0054] In some embodiments, a plurality of lift pins (180) may be provided to receive a substrate (S) from the outside and load it onto the satellite (130) or to transfer the substrate (S) from the satellite (130) to the outside. For example, the lift pins (180) may be arranged to penetrate the satellite (130) and may be raised and lowered relative to the satellite (130) to load or unload the substrate (S) into or from the satellite (130). Furthermore, the lift pins (180) may be coupled to the satellite (130) when the substrate (S) is placed on the satellite (130) and may be raised and lowered or rotated together with the satellite (130).

[0055] In some embodiments, the pin support unit (170) may be provided to be relatively movable relative to the susceptor plate (110) to support the lift pins (180) during loading or unloading of the substrate (S).

[0056] In some embodiments, a heater unit (250) for heating a substrate (S) may be installed inside the process chamber (210) under the susceptor plate (110). For example, the heater unit (250) may include at least one heater (255), and the heater (255) may include various heating sources such as a heating wire or a cartridge heater. A plurality of heaters (255) may be provided in a plurality of zones. Furthermore, the heater unit (250) may further include a housing body (251) surrounding a side of the heater (255) within the process chamber (210) under the susceptor plate (110) and a quartz plate (253) supported on the housing body (252).

[0057] In some embodiments, a rotation sensor (275) may be provided to measure a rotational speed of at least one satellite (130), for example, a plurality of satellites (130). For example, the rotation sensor (275) may be coupled to a side wall of the process chamber (210), for example, a chamber body (213), and may view the satellites (130) through a window formed in the side wall of the chamber body (213). For example, the rotation sensor (275) may measure the number of rotations of the satellites (130) and may include, for example, a displacement sensor.

[0058] For example, as illustrated in FIG. 5, a groove pattern (132) is formed on the side surface of the satellites (130), and the rotation sensor (275) can measure the change in displacement of the groove pattern (132) to measure the rotation speed of the satellites (130). For example, the groove pattern (132) can be formed so that concave grooves are regularly arranged and can include a sawtooth pattern. The rotation speed of these satellites (130) is the sum of the orbital speed due to the rotation of the susceptor plate (110) and the rotational speed of each satellite (130). Since the orbital speed can be separately calculated from the encoder value of the motor driven to rotate the substrate support member (230), the rotational speed can be calculated from the rotational speed.

[0059] In some embodiments, the rotation sensor (275) may calculate the rotation speed internally and output it to the control unit (280), or the control unit (280) may receive the rotation speed from the rotation sensor (275) and calculate the rotation speed.

[0060] The control unit (280) can control the flow rate of the rotating gas to control the rotational speed, for example, the rotation speed, of at least one satellite (130). For example, the control unit (280) can control at least one flow regulator (1646) to control the flow rate of at least one rotating gas. The control unit (280) may be a processor that controls the flow regulator (1646) or may be part of a central processor that controls the substrate processing apparatus (200) as a whole, including the flow regulator (1646).

[0061] The control unit (280) can control the flow rate of at least one rotating gas supplied to at least one settling groove (120) in order to control the rotation speed of at least one satellite (130). Furthermore, the control unit (280) can control the supply of at least one rotating gas so that while continuously supplying a first preset flow rate of rotating gas to at least one settling groove (120), a second flow rate of rotating gas calculated based on a rotation speed value calculated from a rotation speed measured by a rotation sensor (275) is additionally supplied to at least one settling groove (120). For example, the second flow rate can be calculated dynamically or in real time whenever a rotation speed value of the satellite (130) is calculated.

[0062] In some embodiments, the first flow rate may be a basic control value when controlling the rotating gas, and may be calculated by considering the minimum flow rate. For example, the first flow rate may be set through repeated experiments, taking into account the target rotation speed of the satellite (130), etc.

[0063] In some embodiments, the second flow rate may be a value calculated periodically using a PID control method based on a target value of at least one rotating gas and a rotating speed value of the satellite (130). For example, the control unit (280) may compare a preset rotating speed value with a rotating speed value calculated from the rotation speed to control the supply of the rotating gas of the second flow rate additionally supplied periodically using a PID control method. PID control is a type of feedback control that maintains an output at a reference value based on an error between a control variable and a reference input, and may be a combination of proportional control, proportional-integral control, and proportional-derivative control.

[0064] In some embodiments, the rotation speed value and the second flow rate may be calculated each time the substrate support (230) rotates once. For example, the control unit (280) may calculate the rotation speed value and the second flow rate each time the substrate support (230) rotates once. As illustrated in FIG. 5, a single rotation sensor (275) may calculate the rotation speed of each satellite (130) once each time the substrate support (230) rotates once. However, when a plurality of rotation sensors (275) are arranged, the number of calculations may be increased to more than once.

[0065] In some embodiments, a plurality of satellites (130) may be respectively seated in a plurality of settling grooves (120), a plurality of rotating gases may be respectively supplied to the plurality of settling grooves (120), and a rotation sensor (275) may respectively measure the rotational speeds of the plurality of satellites (130). In this case, the control unit (280) may receive the rotational speeds of the plurality of satellites (130) from the rotation sensor (275) and control the flow rates of the plurality of rotating gases based on the rotational speed values ​​of the plurality of satellites (130) calculated from these rotational speeds. For example, the control unit (280) may respectively control the flow rate regulators (1646) connected to the gas pipes (1642) to the settling grooves (120).

[0066] Furthermore, the second flow rate can be calculated for each of the plurality of rotating gases based on the rotation speed values ​​of the plurality of satellites (130). For example, the control unit (280) can compare the preset rotation speed value with the rotation speed values ​​of the plurality of satellites (130) and control the supply of the additionally supplied second flow rate of rotating gas at predetermined intervals using a PID control method.

[0067] Meanwhile, the control unit (280) can control the supply conditions of floating gas other than the rotating gas. For example, the supply conditions of floating gas may include whether floating gas is blocked, the flow rate of floating gas, the type of floating gas, etc.

[0068] Below, a method for controlling the rotation speed of satellites (130) using a substrate processing device (200) is described.

[0069] FIG. 6 shows a method for controlling the rotation speed of a satellite using a substrate processing device (200) according to some embodiments of the present invention.

[0070] Referring to FIGS. 1 to 6 together, the first flow rate of the rotating gas supplied to each satellite (130) can be set (S12). As described above, the first flow rate can be set around the minimum flow rate value based on past data based on the target rotation speed value of the satellite (130). This first flow rate can be modified through repeated experiments so as not to exceed the minimum flow rate value. For example, the first flow rate can have a range of about 80 to 90% of the total flow rate of the rotating gas. This first flow rate range can be set in consideration of the minimum flow rate value and the flow rate fluctuation range.

[0071] Next, the rotation speed of each satellite (130) can be measured using the rotation sensor (275) (S14). As described above, the rotation speed of each satellite (130) can be measured each time the substrate support (230) rotates once using the rotation sensor (275). From this rotation speed, the rotation speed value of each satellite (130) can be obtained by taking into account the rotation speed of the substrate support (230).

[0072] Next, the second flow rate of the rotating gas can be calculated based on the rotation speed value calculated from the rotation speed (S16). The second flow rate can be calculated using the PID control method based on the target value of the rotating gas and the calculated rotation speed value. For example, in this step (S16), the second flow rate can be calculated dynamically or in real time whenever the rotation speed value is calculated. The second flow rate can have a range of 10 to 20% of the total flow rate of the rotating gas. This second flow rate is determined by considering the PID control range, i.e., the flow rate fluctuation range, and can be determined based on the first flow rate.

[0073] Next, the second flow rate can be added to the first flow rate to calculate the control flow rate of the rotating gas, i.e., the total flow rate (S18). This control flow rate can be updated each time the second flow rate is calculated.

[0074] The above-described control may be performed in a state where the substrates (S) are mounted on the satellites (130), or may be performed in a state where the substrates (S) are not mounted on the satellites (130).

[0075] As described above, when controlling the flow rate of the rotating gas for controlling the rotation of the satellites (130) or the substrates (S), since the first flow rate is continuously supplied during the control while the second flow rate is dynamically changed, the range of change in the flow rate of the rotating gas can be significantly reduced by supplying the first flow rate at a fixed level. By reducing the change in the flow rate of the rotating gas in this way, when continuously processing the substrates (S), the change in the rotation speed of the satellites (130) or the substrates (S) can be reduced, thereby increasing the uniformity or reproducibility of the rotation speed.

[0076] The substrate processing device (200) described above can be used to form a thin film on substrates (S) using the atomic layer deposition (ALD) method. When depositing a thin film on substrates (S) using the substrate processing device (200), the uniformity of the thickness of the thin film between the substrates (S) can be increased by increasing the uniformity of the rotation speed of the substrates (S). Meanwhile, the substrate processing device (200) can also be used to form a thin film on substrates (S) using the chemical vapor deposition (CVD) method.

[0077] Below, the change in the flow rate of the rotating gas and the change in the rotating speed according to comparative examples and examples are described.

[0078] FIGS. 7 and 8 are graphs showing changes in the rotation gas flow rate and the satellite rotation speed when controlling the satellite rotation speed according to some embodiments of the present invention, and FIGS. 9 and 10 are graphs showing changes in the rotation gas flow rate and the satellite rotation speed when controlling the satellite rotation speed in a comparative example.

[0079] In the comparative example, when controlling the rotation speed of the satellite, the entire flow rate was controlled using the PID method, and in the embodiment, as described above, the first flow rate (F1) was continuously supplied while only the second flow rate (F2) was controlled using the PID method.

[0080] As illustrated in FIG. 9, in the comparative example, the range of variation in the flow rate of the rotating gas varies greatly within the range of 0 to 800 sccm, whereas in the embodiment, as illustrated in FIG. 7, since the first flow rate (F1), for example, 600 scmm, is basically fixedly supplied, the total flow rate is limited to the range of variation in the second flow rate (F2) and varies only within approximately 100 sccm. Therefore, it can be seen that in the embodiment, the variation in the flow rate of the rotating gas can be reduced to approximately 1 / 8 compared to the comparative example.

[0081] As shown in Fig. 10, in the comparative example, the rotation speed of the satellite varies by a range of about 1.306 (rpm), whereas, as shown in Fig. 8, in the embodiment, the rotation speed of the satellite varies by a range of about 0.673 (rpm). Therefore, it can be seen that in the embodiment, the range of variation in the rotation speed of the satellite can be reduced by almost half compared to the comparative example.

[0082] While the present invention has been described with reference to the embodiments illustrated in the drawings, these are merely exemplary, and those skilled in the art will appreciate that various modifications and equivalent alternative embodiments are possible. Therefore, the true scope of technical protection of the present invention should be determined by the technical spirit of the appended claims.

Claims

1. A process chamber comprising a reaction space for processing at least one substrate; A gas injection unit installed at the top of the process chamber to inject process gas into the reaction space; A substrate support unit comprising a susceptor plate installed in the process chamber facing the gas injection unit and having at least one settling groove formed therein, at least one satellite positioned in the at least one settling groove so that the at least one substrate can be mounted thereon and capable of floating and rotating from the settling groove by at least one rotating gas supplied through the at least one settling groove, and a shaft coupled to the susceptor plate and installed in the process chamber so as to be rotatable so as to orbit the substrate; a rotation sensor for measuring the rotational speed of at least one satellite; and A control unit that controls the supply of the at least one rotating gas to control the flow rate of the at least one rotating gas supplied to the at least one settling groove in order to control the rotation speed of the at least one satellite, while continuously supplying the rotating gas at a preset first flow rate and additionally supplying the rotating gas at a second flow rate calculated based on the rotation speed value calculated from the rotation speed. Substrate processing device.

2. In paragraph 1, A substrate processing device, wherein the control unit compares the preset rotation speed value with the rotation speed value calculated from the rotation speed and controls the supply of the additionally supplied second flow rate of rotation gas at predetermined intervals using a PID control method.

3. In paragraph 2, A substrate processing device, wherein the control unit calculates the rotation speed value each time the substrate support unit rotates once, and calculates the second flow rate each time the substrate support unit rotates once.

4. In paragraph 1, At least one flow regulator for controlling the flow rate of the at least one rotating gas supplied to the at least one settling groove, The control unit controls the flow rate of the at least one rotating gas by controlling the at least one flow regulator. Substrate processing device.

5. In paragraph 1, wherein said at least one settling groove comprises a plurality of settling grooves, The at least one satellite includes a plurality of satellites each of which is mounted in the plurality of mounting grooves, The at least one rotating gas comprises a plurality of rotating gases supplied to each of the plurality of settling grooves, The control unit receives the rotation speeds of the plurality of satellites from the rotation sensor, and controls the flow rates of the plurality of rotating gases based on the rotation speed values of the plurality of satellites calculated from the rotation speeds. Substrate processing device.

6. In paragraph 5, A substrate processing device in which the control unit compares the preset rotation speed value with the rotation speed values of the plurality of satellites and controls the supply of the additionally supplied second flow rate of rotation gas at predetermined intervals using a PID control method.

7. In paragraph 1, A substrate processing device, wherein the first flow rate is in the range of 80 to 90% of the total flow rate of the rotating gas.

8. In paragraph 1, A substrate processing device, wherein the second flow rate is in the range of 10 to 20% of the total flow rate of the rotating gas.

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