Substrate processing chambers having high conductance hardware

Abstract

An embodiment of a processing chamber includes a chamber body having a central axis and at least partially defining a processing cavity therein. In addition, the processing chamber includes a substrate support fixed within the processing cavity. The substrate support includes an upper end portion that is configured to support a substrate thereon and a lower end portion that is spaced from the upper end portion along the central axis. The lower end portion is chamfered so as to taper toward the central axis.

Description

SUBSTRATE PROCESSING CHAMBERS HAVING HIGH CONDUCTANCE HARDWARECROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of Indian provisional patent application No. 202441008217 filed on February 7, 2024, the contents of which being incorporated herein by reference in their entirety.BACKGROUNDField

[0002] Embodiments disclosed herein generally relate to apparatus and methods utilized in the manufacture of semiconductor devices. More particularly, embodiments disclosed herein relate to a substrate processing chamber, and components thereof, for forming semiconductor devices.Background Information

[0003] Integrated circuits have evolved into complex devices that can include large numbers of transistors, capacitors and resistors on a single chip. The evolution of chip designs continually involves faster circuitry and greater circuit density. The demands for faster circuits with greater circuit densities impose corresponding demands on the materials used to fabricate such integrated circuits.

[0004] The demands for greater integrated circuit densities also impose demands on the process sequences used in the manufacture of integrated circuit components. Film stress and film modulus can each have a significant impact on the performance and reliability of integrated circuits. Ideally, the film will have a high modulus (such as a high Modulus of Elasticity or Mechanical stiffness). However, achieving these higher modulus in a film may necessitate lower operating pressures than what are currently used during deposition operations. Thus, what is needed are improved methods and apparatus for fabricating semiconductor devices and particularly those that may allow for lower operating pressures during a deposition process so that the deposited film may enjoy a higher modulus.SUMMARY

[0005] Described herein are embodiments of a substrate processing chamber, and components thereof, for manufacturing semiconductor devices. Some embodiments may include one or more features that are configured to improve conductance through the processing chamber so that lower operating pressures may be utilized during a deposition operation.

[0006] For instance, some embodiments disclosed herein are directed to a processing chamber. In some embodiments, the substrate processing chamber includes a chamber body having a central axis and at least partially defining a processing cavity therein. In addition, the substrate processing chamber includes a substrate support fixed within the processing cavity. The substrate support includes an upper end portion that is configured to support a substrate thereon. In addition, the substrate support includes a lower end portion that is spaced from the upper end portion along the central axis. The lower end portion is chamfered so as to taper toward the central axis.

[0007] Some embodiments disclosed herein are directed to a substrate support for a processing chamber. In some embodiments, the substrate support includes a central axis, an upper end portion, and a lower end portion spaced from the upper end portion along the central axis. In addition, the substrate support includes an electrostatic chuck positioned proximate the upper end portion, the electrostatic chuck including one or more electrodes that, when energized, are configured to exert an electrostatic chucking force on a substrate supported on the upper end portion. Further, the substrate support includes a mounting plate positioned at the lower end portion, wherein the mounting plate includes a chamfer that that tapers toward the central axis.

[0008] Some embodiments are directed to a processing chamber. In some embodiments, the processing chamber includes a central axis, a chamber body at least partially defining a processing cavity therein, a vacuum pump assembly, and a chamber bucket coupled between the chamber body and the vacuum pump assembly along the central axis. In addition, the processing chamber includes a substrate support fixed within the processing cavity. Further, the processing chamber includesa plurality of axially oriented vacuum channels defined by the chamber bucket that are configured to direct fluid out of the processing cavity to the vacuum pump assembly. Each of the plurality of axially oriented vacuum channels has a cross-sectional area in a radial plane relative to the central axis that is in a range from about 90 square inches (in2) to about 140 in2.BRIEF DESCRIPTION OF THE DRAWINGS

[0009] So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only exemplary embodiments and are therefore not to be considered limiting of its scope, and may admit to other equally effective embodiments.

[0010] FIG. 1 is a schematic, cross-sectional side view of an illustrative processing chamber, according to certain embodiments.

[0011] FIG. 2 is a schematic, cross-sectional view of a substrate support, according to certain embodiments.

[0012] FIG. 3 is a perspective view of a portion of a lift pin spider that interfaces with a ground plate and mounting plate of the substrate support of FIG. 2, according to certain embodiments.

[0013] FIG. 4 is a perspective view of a ground plate and mounting plate of an embodiment of a substrate support coupled to a connection flange, according to certain embodiments.

[0014] FIG. 5 is a perspective view of the connection flange of FIG. 4, according to certain embodiments.

[0015] FIG. 6 is a perspective view of a chamber bucket of the processing chamber of FIG. 1 , according to certain embodiments.

[0016] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation. The drawing figures are not necessarily to scale. Certain features and components herein may be shown exaggerated in scale or in somewhat schematic form. In addition, some details may not be shown in interest of clarity and conciseness.DETAILED DESCRIPTION

[0017] Embodiments of the present disclosure generally relate to a substrate processing chamber, and components thereof, for forming semiconductor devices.

[0018] Described herein are embodiments of a substrate processing chamber, and components thereof, for manufacturing semiconductor devices. More particularly, described herein are embodiments of substrate processing chambers with shorter radio frequency (RF) power return paths, fixed cathodes, and shorter chamber heights. As is described herein, by fixing the substrate support, e.g., removing the associated lift assembly, the RF power path can be shortened and the chamber involves fewer moving components, preventing deposition under the substrate support. Further, a reduced chamber height allows a turbo pump to be disposed closer to the electrostatic chuck, increasing chamber conductance, reducing pumping time, and achieving lower chamber pressures. Without being limited to this or any other theory, the higher chamber conductance and resulting lower chamber pressures facilitated by the embodiments disclosed herein may allow for the manufacture of semiconductor devices having higher modulus (such as Modulus of Elasticity) and lower film stress.

[0019] FIG. 1 is a schematic side cross sectional view of an illustrative processing chamber 100 suitable for manufacturing a semiconductor device according to at least some embodiments. For instance, the chamber 100 may be configured to conduct one or more processing steps for manufacturing such a semiconductor device. In some embodiments, the processing chamber 100 is configured to conduct a deposition process, whereby one or more films are deposited on a substrate 145. In some embodiments, the processing chamber 100 may be configured to depositadvanced patterning films onto the substrate 145, such as a hardmask films, for example amorphous carbon hardmask films.

[0020] Generally speaking, the processing chamber 100 includes a central or longitudinal axis 101 , a lid assembly 105, a chamber body 110, a chamber bucket 192, and a vacuum pump assembly 120. The chamber body 110 may be coupled to and positioned between the lid assembly 105 and the chamber body 110 along the central axis 101 . Specifically, the chamber body 110 may include a first or upper end 110a and a second or lower end 110b. Similarly, the chamber bucket 192 may include a first or upper end 192a and a second or lower end 192b. The lid assembly 105 is coupled to the upper end 110a of the chamber body 110, and the lower end 110b of the chamber body 110 is coupled to the upper end 192a of the chamber bucket 192.

[0021] The chamber body 110 may at least partially define a processing cavity 160 therein. For instance, the processing cavity 160 may be defined by at least the chamber body 110 and the lid assembly 105. The processing cavity 160 may be positioned within the chamber body 110 and extend axially downward from the lid assembly 105 toward the lower end 110b.

[0022] A substrate support 115 is positioned in the processing cavity 160. The substrate support 115 may support the substrate 145 within the processing cavity 160 such that the substrate 145 is positioned in the chamber body 110. As will be described in more detail below, the substrate support 115 may include an electrostatic chuck (not specifically depicted in FIG. 1 ) that is configured to exert an electrostatic chucking force on the substrate 145 during operations.

[0023] The lid assembly 105 includes a lid plate 125 and a showerhead 135. In addition, the lid assembly 105 is coupled to a processing gas source 141 that contains one or more precursor gases for forming films on the substrate 145 supported on the substrate support 115 in the processing cavity. The processing gas source 141 provides the one or more precursors gases to a plenum 190 defined in the lid assembly 105. The lid assembly 105 includes one or more channels for directing the one or more precursor gases from the processing gas source 141 into the plenum 190. For instance, the lid assembly 105 may include a central conduit 191 for axially directing the one or more precursor gases into the plenum 190 relative to the centralaxis 101 . From the plenum 190, the precursor gas(es) flow through the showerhead 135 and into the processing cavity 160.

[0024] The lid assembly 105 may also be coupled to a remote plasma source (RPS) 150. The RPS 150 is coupled to a cleaning gas source 155 for providing cleaning gases to the processing cavity 160. In some examples, cleaning gases are provided into the showerhead 135 via the central conduit 191 .

[0025] The lid assembly 105 is also coupled to a first radio frequency (RF) power source 165. The first RF power source 165 facilitates maintenance or generation of plasma, such as a plasma generated from a cleaning gas or the one or more precursor gases. The substrate support 115 is coupled to a second RF power source 170 via a facilities cable 178. The first RF power source 165 may be a high frequency RF power source (for example, about 13.56 MHz to about 120 MHz) and the second RF power source 170 may be a low frequency RF power source (for example, about 2 MHz to about 13.56 MHz). It should be appreciated that other frequencies or frequency ranges are also contemplated. In some implementations, one or both of the first RF power source 165 and the second RF power source 170 is / are mixed frequency RF power source(s), that are configured to provide both high frequency and low frequency power. It should be appreciated that the facilities cable 178 may include a plurality of conductors (e.g., wires, fiber optic cables, pipes, conduits, etc.) that are configured to communicate energy, communication signals, fluids, etc. between the substrate support 115 (or a component thereof or coupled to) and other sources, assemblies, or systems. Because the substrate support 115 is coupled to the second RF power source 170, the substrate support 115 may be said to comprise, include, or be a cathode or cathode assembly.

[0026] The processing chamber 100 also includes a substrate transfer port 185. The substrate transfer port 185 may be positioned or defined on the chamber body 110, axially between the ends 110a, 110b. The substrate transfer port 185 is selectively sealed by an interior door 186A that is positioned inside the processing cavity 160 and an exterior door 186B that is positioned outside of the processing cavity 160. Each of the doors 186A and 186B are coupled to actuators 188 (one of which is schematically shown in FIG. 1 ). The doors 186A and 186B facilitate vacuum sealingof the processing cavity 160 from the surrounding environment. The doors 186A and 186B also provide symmetrical RF application and / or plasma symmetry within the processing cavity 160.

[0027] The vacuum pump assembly 120 may include one or more pumps for generating a vacuum in the processing cavity 160 during operations. Specifically, the vacuum pump assembly 120 may generate a vacuum so as to facilitate a generally axially directed fluid flow through the processing cavity 160 from the showerhead 135 through the processing cavity 160 and chamber buck 192 to the vacuum pump assembly 120. In some embodiments, the vacuum pump assembly 120 may include multiple pumps for generating different magnitudes of vacuum pressures and / or for facilitating different flow rates of fluid in the processing cavity 160 during operations. In some embodiments, the pump(s) of the vacuum pump assembly 120 may be configured to maintain the processing cavity 160 at a pressure of less than about 50 mTorr or at a pressure in a range from about 0.5 mTorr to about 10 Torr. One or more valves (not shown) may be coupled the vacuum pump assembly 120, such as between the vacuum pump assembly 120 and chamber bucket 192, that may at least partially control a fluid flow through the processing cavity 160 during operations.

[0028] In some embodiments, the substrate support 115 is fixed within the processing cavity 160 such that the substrate support 115 (such as an uppermost surface at an upper end portion 115a of the substrate support 115) is positioned at a fixed axial distance 180 from to the lid assembly 105 (for example, relative to a lower surface of the showerhead 135). The distance 180 may be an “axial” distance in that the distance 180 may extend along (or parallel to) the central axis 101. In some embodiments, the axial distance 180 may be in a range from about 0.5 inches to about 12 inches, such from about 1 inch to about 9 inches. Without being limited to this or any other theory, this axial distance 180 may be reduced compared to conventional processing chambers for performing similar manufacturing (such as deposition) processes for a substrate 145. Still without wishing to be bound to this or any other theory, this reduced axial distance 180 increases the conductance of the processing chamber 100 so that an operating pressure of the processing chamber 100 can be generally reduced during operations as previously described.

[0029] In addition, during operations with the processing chamber 100, the vacuum pump assembly 120 may facilitate a fluid (such as plasma, gas, etc.) flow axially around the substrate support 115 and radially between an inner wall 112 of the chamber body 110 and a radially outer surface or perimeter of the substrate support 115. Thus, fluid flow may be generally constricted when flowing in an axial direction between the substrate support 115 and inner wall 112 of the chamber body 110, and this constriction can negatively impact the performance of the processing chamber 160. For instance, constricting the fluid flow within the processing cavity 160 may increase pumping times (such for achieving desired or target vacuum pressures), and can reduce conductance through the processing cavity 160 during operations. Accordingly, some embodiments of the substrate support 115 may be configured to reduce this (or other) constriction in the fluid flow between the substrate support 115 and the inner wall 112 of the chamber body 102.

[0030] For instance, as shown in FIG. 1 , the substrate support 115 may include a first or upper end portion 115a and a second or lower end portion 115b spaced from the upper end portion 115a along the central axis 101. The upper end portion 115a is configured to support the substrate 145 within the processing cavity 160, and the lower end portion 115b is mounted to chamber bucket 192 or the chamber body 110 so as to place the substrate support 115 at the fixed distance 180 from the lower end of the showerhead 135 as previously described.

[0031] The substrate support 115 may be generally cylindrically shaped and has a maximum outer diameter 117 measured radially relative to the central axis 101 . The maximum outer diameter 117 may be sized relative to an inner diameter 161 within the processing cavity 160 so that a radial spacing 118 between a radially outer perimeter or surface of the substrate support 115 and an inner surface 112 of the processing cavity 160 may be increased. In some embodiments, the maximum outer diameter 117 of the substrate support 115 may be in a range of from about 348.5 millimeters (mm) to about 358.5 mm, such as from about 380.5 mm to about 370.5 mm. In addition, the inner diameter 161 of processing cavity 160 may be in a range of from about 381 mm to about 401 mm, such as from about 400.5 mm. Thus, in some embodiments, the radial spacing 118 may be in a range from about 32.6 mm to about 42.6 mm, such as from about 20 mm to about 30 mm. Without being limited tothis or any other theory, the increased radial spacing 118 helps to reduce the constriction to fluid flow through the processing cavity 160 and thereby improve pumping performance and conductance within the processing chamber 100 during operations.

[0032] In addition, the lower end portion 115b (or a portion thereof) of the substrate support 115 may be chamfered so as to taper toward the central axis 101. Specifically, the lower end portion 115b may include a chamfer 116 that generally tapers inward toward the central axis 101 when moving axially away from the upper end portion 115a and toward the chamber bucket 192. Specifically, because the substrate support 115 may be generally cylindrical shaped as previously described, the chamfer 116 may be defined by a frustoconical surface that extends circumferentially or annularly about the central axis 101 . Without being limited to this or any other theory, the chamfer 116 may also help to reduce a flow constriction between the substrate support 115 and the inner wall 112 of the processing cavity 160 by expanding the cross-sectional flow area for fluid advancing axially around the substrate support 115 during operations.

[0033] In addition, referring still to FIG. 1 , the chamber bucket 192 may define one or more (such as one or a plurality of) vacuum channels 140 that are configured to receive and direct fluid that advances axially out of the processing cavity 160 toward the vacuum pump assembly 120. The vacuum channels 140 may be axially oriented through the chamber bucket 192 relative to the central axis 101 and may extend axially from the upper end 192a to the lower end 192b. In addition, the cross-sectional flow area of the vacuum channels 140 may be increased so as to facilitate a high volume of fluid flow therethrough during operations. The cross-sectional flow area of the vacuum channel(s) 140 may be measured in a radially oriented plane relative to the central axis 101 . For instance, in some embodiments, the cross-sectional area of the vacuum channel(s) is in a range from about 90 square inches (in2) to about 140 in2, such as about 100 in2to about 120 in2, or about 110 in2to about 115 in2. Still other magnitudes and ranges for the cross-sectional area of the vacuum channel(s) 140 contemplated. The increased total cross-sectional area of the vacuum channels 140 may improve the fluid flow rate through and a conductance of the processing chamber 100. For instance, in some embodiments, the increase total cross-sectional flow areaof the vacuum channels 140 may increase the conductance of the processing chamber 100 by over 200%, especially when used in combination with other features described herein.

[0034] Further, the axial length (or height) 193 of the chamber bucket 192 may be reduced so as to shorten a fluid flow path through the chamber bucket 192 via the vacuum channels 140 during operations. For instance, in some embodiments, the axial length 193 of the chamber bucket 192 may be less than about 12 in, such as in a range of from about 8 in to about 12.5 in, or such as from about 9 in to about 11 .5 in.

[0035] Without being limited to this or any other theory, the fixed and reduced distance 180 in the chamber cavity 160, the increased radial spacing 118, the chamfer 116 of the substrate support 115, the increased cross-sectional flow area of the vacuum channels 140 taken alone and in various combinations may help to maintain shorter and more open fluid flow path through the processing chamber 100 during operations. Such a shorter and more open fluid flow path may encourage a higher density of fluid flowing throughout the processing chamber 100, which in turn may help to maintain a more consistent RF course path and thus higher conductance through the processing chamber 100 (via the fluid flow) and higher pumping efficiency during operations. Still without being limited to this or any other theory, a higher conductance through the processing chamber 100 (and particularly the processing cavity 160 defined therein) may allow for lower chamber pressures for achieving higher modulus and lower stresses for films deposited onto the substrate 145 during operations.

[0036] FIG. 2 is a cross-sectional view of an embodiment of the substrate support 115. As described above, the substrate support 115 includes an electrostatic chuck 230. The electrostatic chuck 230 includes a puck 200. The puck 200 includes one or more electrodes 205 embedded therein. A single electrode 205 is shown in the puck 200 in FIG. 2; however, it should be appreciated that puck 200 may include a plurality of electrodes such as a first electrode that is configured utilized as a chucking electrode for the substrate 145 (FIG. 1 ) and the second electrode that is utilized as an RF biasing electrode. The substrate support 115 may be biased by providing RFpower at a suitable frequency (such as a constant frequency, pulsed frequency, etc.), such as a frequency of about 300 kHz to about 60 MHz to one of the plurality of electrodes of puck 200 during operations. In some embodiments, the puck 200 is formed from a dielectric material, such as a ceramic material, for example aluminum nitride (AIN).

[0037] The puck 200 is supported by a dielectric plate 210 and a base plate 215. The dielectric plate 210 may be formed from an electrically insulative material, such as quartz, or a thermoplastic material, such as high performance plastics sold under the tradename REXOLITE®. The base plate 215 may be made from a metallic material, such as aluminum. During operations, the base plate 215 is coupled to ground or is electrically floating while the puck 200 is RF hot. At least the puck 200 and the dielectric plate 210 are surrounded by an insulator ring 220. The insulator ring 220 may be made of a dielectric material such as quartz, silicon, or a ceramic material. The insulator ring 220 may prevent or minimize arcing between the puck 200 and the base plate 215 during operations. An end of the facilities cable 178 is shown in corresponding axially oriented openings formed in the puck 200, the dielectric plate 210 and the base plate 215. Power for the electrode(s) 205 of the puck 200, is provided by the facilities cable 178 (or one or more conductors thereof) during operations. In addition, other conductors may be included in the facilities cable 178 to provide other signals, fluids, etc. to the substrate support 115 (including electrostatic chuck 230) during operations.

[0038] The substrate support 115 also includes a plurality of lift pins 242 (only one is shown in FIG. 2). Each of the lift pins 242 are movably disposed in a dielectric bushing 244. Each of the lift pins 242 may be formed from a ceramic material, such as AIN, sapphire, quartz, or the like. The dielectric bushing 244 is provided in or through each of the puck 200, the dielectric plate 210 and the base plate 215. The dielectric bushing 244 is made of a polymer material, such as a polytetrafluoroethylene (PTFE) material. The dielectric bushing 244 includes an opening 146 along the length direction thereof where the lift pin 242 is guided. The opening 246 is sized slightly larger than the dimension (diameter) of the lift pin 242 such that a conductance path is formed in the dielectric bushing 244. For example, the opening 246 may be coupled to the vacuum pump assembly 120 (FIG. 1 ) suchthat vacuum conductance is provided between the processing volume 160 (FIG. 1 ) and through the dielectric bushing 244 to the vacuum pump assembly 120. The conductance path provided by the opening 246 prevents arcing of the lift pins. The dielectric bushing 244 includes a plurality of steps 248 which are varied diameter sections. The steps 248 reduce arcing between the puck 200 and the base plate 215 by increasing the length of the path electricity may travel, as well as by introducing angular turns along the path.

[0039] As previously described, the substrate support 115 is fixed in position within the processing chamber 100, and therefore is not mounted onto a lift assembly. As a result, there is no need for a self-alignment feature for the substrate support 115. The fixed configuration of the substrate support 115 allows for a shorter and consistent RF power source path, such as a ground return path, which prevents inconsistent wattage and lowers cost.

[0040] Specifically, as shown in FIG. 2, the substrate support 115 includes a ground plate 250 that is secured to a lower side of the base plate 215, and a mounting plate 260 that is secured to a lower side of the ground plate 260. Both the ground plate 250 and the mount plate 260 may be constructed from a metallic material such as aluminum.

[0041] One or both of the ground plate 250 and mounting plate 260 may define the chamfer 116 at the lower end portions 115b of the substrate support 115 as previously described (FIG. 1 ). For instance, as shown in FIG. 2, in some embodiments, both the ground plate 250 and the mounting plate 260 may have radially outer surfaces 252 and 262, respectively (relative to central axis 101 ) that are formed as frustoconical surfaces that taper toward the central axis 101 when moving axially away from the upper end portion 115a and electrostatic chuck 230. The radially outer surfaces 252, 262 may taper at different angles. For instance, the radially outer surface 252 of ground plate 250 may be a frustoconical surface that is oriented at a first angle a relative to the central axis 101 , and the radially outer surface 262 of the mounting plate 260 may be a frustoconical surface that is oriented at a second angle [3 relative to the central axis 101 . The angle a may be less than the angle |3, such that the taper of the radially outer surface 262 of mounting plate 260 is more aggressive than thatof the radially outer surface 252 of ground plate 250. However, it is contemplated that the radially outer surfaces 252, 262 of plates 250, 260, respectively, may be oriented at substantially the same angle relative to the central axis 101 and may be aligned (or flush) to define a continuous frustoconical surface. One or both of the radially outer surfaces 252, 262 may define the chamfer 116 of at the lower end portions 115b of the substrate support 115 as previously described (FIG. 1 ).

[0042] FIG. 3 shows a lift pin spider 300 that interfaces with the ground plate 250 and mounting plate 260. The lift pin spider 300 includes a ring body 305 having one or more (such as a plurality of) pin grip devices 310 coupled thereto. Each pin grip device 310 supports one of the lift pins 242 (FIG. 2), so that the number of pin grip devices 310 may match the number of lift pins 242. The ring body 305 includes a circular or generally circular outer edge 360, and inner edge 361 . The inner edge 361 is circular and includes one or more lobes (two minor lobes 362 and one major lobe 363, which is greater in size than the minor lobes 362, is shown). The lobes 362, 363 are spaced at about equal angular distances from one another (such as about 120 degrees) and include a lift pin 242 and corresponding lift pin device 310 attached thereto. The lift shaft 320 is coupled to the major lobe 363, on a side opposite a respective lift pin 242. In such an example, the lift shaft 320 and the respective lift pin are axially aligned, however the lift pins 242 may be disposed on the outside of the ground plate 250 and / or mounting plate 260. This alternative lift pin configuration improves serviceability of the overall chamber and reduces cost.

[0043] As shown in FIG. 2, The ring body 305 is adapted to fit in a vacuum channel 325 that is defined in the mounting plate 260 and / or ground plate 250. The vacuum channel 325 may be in fluid communication with the vacuum pump assembly 120 via one or more conduits (not shown). In this manner, conductance paths are formed around the lift pins 242.

[0044] Referring still to FIG. 2, the mounting plate 260 may be coupled to or integrally formed with a connection flange 280. As generally shown in FIG. 1 , the connection flange 280 may connect the lower end portion 115b (and particularly the mounting plate 260) of substrate support 115 to the upper end 192a of the chamberbucket 192. As such, the connection flange 280 is adjacent (such as axially adjacent) the chamfered surface 116.

[0045] FIG. 4 is a perspective view of an embodiment of the ground plate 250, mounting plate 260, and connection flange 280 connected to one another along the central axis 101. FIG. 5 is a perspective view of the embodiment of the connection flange 280 shown in FIG. 4.

[0046] As best shown in FIG. 5, the connection flange 280 includes a central ring- shaped body 282 that includes one or more central openings or apertures 284. The aperture(s) 284 allow for the routing of facilities cable 178 and / or other cables or conduits to or from the substrate support 115 (FIG. 1 ). The ring-shaped body 282 also includes an outer circumference or perimeter 283 that extends circumferentially about the central axis 101 , and a plurality of circumferentially spaced lobes 286 extend radially outward from the outer perimeter 283. In some embodiments, the plurality of circumferentially spaced lobes 286 may be uniformly circumferentially spaced about the axis 101 ; however, non-uniform circumferential spacing is contemplated. For instance, in the embodiment shown in FIG. 5, the connection flange 280 may include a total of three (3) lobes 286 that are spaced about 120° about the central axis 101 ; however, different numbers and arrangements of lobes 286 are contemplated.

[0047] The lobes 286 may define a plurality of gaps or openings 288 circumferentially positioned between each pair of circumferentially adjacent lobes 286. Thus, because the embodiment of connection flange 280 shown in FIG. 5 has a total of three lobes 286, there are a total of three (3) openings 288 that are circumferentially spaced about the central axis 101. The openings 288 may have a cross-sectional area in a radially-oriented plane that is defined by a circumferential length (or arc length) extending circumferentially between two circumferentially adjacent lobes 286 and a radial width extending from the outer perimeter 283 to the outer radius 287 of the lobes 286.

[0048] Each of the lobes 286 includes a plurality, in this case two, bolt holes 289 defined therein. As will be described in more detail below, the bolt holes 289 may align with corresponding bolt holts on the upper end 192a of the chamber bucket 192 (FIG. 1 ) so that the connection flange 280 may be secured to the chamber bucket 192during operations. Similarly, the ring-shaped body 282 may include a plurality of bolt holes 285 that facilitate connection to the mounting plate 260 (FIG. 4).

[0049] FIG. 6 shows an embodiment of the chamber bucket 192 according to some embodiments. The chamber bucket 192 includes a first or upper flange 194 at the upper end 192a and a second or lower flange 196 at the lower end 192b. In addition, the bucket chamber 192 includes an inner member 198 connected to the flanges 195, 196 and extending axially between the ends 192a, 192b. The inner member 198 may define each of the vacuum channels 140 that extends axially between the ends 192a, 192b as previously described (FIG. 1 ).

[0050] Referring now to FIGS. 5 and 6, the connection flange 280 may be mounted to the upper end 192a of the chamber bucket 192 as previously described. Specifically, the inner member 198 may includes a plurality of bolt holes 199 that are aligned with the bolt holes 298 extending in the lobes 286 so that bolts (or other engagement members) may be inserted therethrough to secure the connection flange 280 to the upper end 192a of the chamber bucket 192 during operations.

[0051] In addition, as may be appreciated from FIGS. 5 and 6, the plurality of openings 288 may be aligned with the vacuum channels 140 defined in the inner member 198, such that when the connection flange 280 is mounted to the upper end 192a of the chamber bucket 192, the openings 288 may define inlets into the vacuum channels 140. Thus, the number and arrangement of the vacuum channels 140 may correspond to (e.g., match) the number and arrangement of the openings 288 in the connection flange 280. As a result, the openings 288 may have the same cross- sectional flow area as that previously described for the vacuum channels 140.

[0052] In the preceding discussion and in the claims, the terms “including” and “comprising” are used in an open-ended fashion, and thus should be interpreted to mean “including, but not limited to . . . .” Also, the term “couple” or “couples” is intended to mean either an indirect or direct connection. Thus, if a first device couples to a second device, that connection may be through a direct connection of the two devices, or through an indirect connection that is established via other devices, components, nodes, and connections. In addition, as used herein, the terms “axial” and “axially” generally mean along or parallel to a given axis (e.g., central axis of abody or a port), while the terms “radial” and “radially” generally mean perpendicular to the given axis. For instance, an axial distance refers to a distance measured along or parallel to the axis, and a radial distance means a distance measured perpendicular to the axis. Further, when used herein (including in the claims), the words “about,” “generally,” “substantially,” “approximately,” and the like, when used to refer to a stated value, mean within a range of plus or minus 10% of the stated value.

[0053] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow. In the claims that follow, the recitation of identifiers such as (a), (b), (c) or (1 ), (2), (3) before steps in a method claim are not intended to and do not specify a particular order to the steps, but rather are used to simplify subsequent reference to such steps.

Claims

What is claimed is:1 . A processing chamber comprising: a chamber body having a central axis and at least partially defining a processing cavity therein; a substrate support fixed within the processing cavity, wherein the substrate support includes: an upper end portion that is configured to support a substrate thereon; and a lower end portion that is spaced from the upper end portion along the central axis, wherein the lower end portion is chamfered so as to taper toward the central axis.

2. The processing chamber of claim 1 , wherein the substrate support includes an electrostatic chuck and a mounting plate that is coupled to and positioned below the electrostatic chuck, wherein the mounting plate defines the lower end portion.

3. The processing chamber of claim 2, wherein the lower end portion is chamfered via a frustoconical surface defined on the mounting plate that extends circumferentially about the central axis.

4. The processing chamber of claim 3, further comprising a chamber bucket coupled to the chamber body, wherein the chamber bucket defines a plurality of axially oriented vacuum channels, and wherein each of the axially oriented vacuum channels has a cross-sectional area in a radial plane relative to the central axis that is in a range from about 90 square inches (in2) to about 140 in2.

5. The processing chamber of claim 4, further comprising a vacuum pump assembly coupled to a lower end of the chamber bucket such that the vacuum pump assembly is configured to pull fluid out of the processing cavity via the plurality of axially oriented vacuum channels, wherein an axial length of the chamber bucket is less than about 12 inches (in).

6. The processing chamber of claim 4, further comprising a connection flange that is coupled to the mounting plate and secured to an upper end of the chamber bucket, wherein the connection flange comprises a plurality of lobes circumferentially spaced about the central axis to define a plurality of openings circumferentially positioned therebetween, wherein the plurality of openings define inlets to the plurality of axially oriented vacuum channels.

7. The processing chambers of claim 6, wherein each of the plurality of lobes comprises one or more bolt holes for securing the substrate support to the upper end of the chamber bucket via the connection flange.

8. The processing chamber of claim 5, wherein the mounting plate is fixed to an upper end of the chamber bucket.

9. The processing chamber of claim 8, further comprising a lift pin spider including a plurality of lift pins coupled to a ring body, wherein the ring body is positioned in a cavity at least partially defined in the mounting plate, and wherein an axial movement of the ring body within the cavity is configured to axially extend the lift pins through the upper end portion of the substrate support to lift the substrate from the upper end portion.

10. The processing chamber of claim 9, wherein the electrostatic chuck includes one or more electrodes that, when energized, are configured to exert an electrostatic chucking force on the substrate supported on the upper end portion.

11. A substrate support for a processing chamber, the substrate support comprising: a central axis, an upper end portion, and a lower end portion spaced from the upper end portion along the central axis; an electrostatic chuck positioned proximate the upper end portion, the electrostatic chuck including one or more electrodes that, whenenergized, are configured to exert an electrostatic chucking force on a substrate supported on the upper end portion; and a mounting plate positioned at the lower end portion, wherein the mounting plate includes a chamfer that that tapers toward the central axis.

12. The substrate support of claim 11 , wherein the chamfer is defined by a frustoconical surface that extends circumferentially about the central axis.

13. The substrate support of claim 12, further comprising a connection flange that is coupled to the mounting plate, wherein the connection flange comprises a plurality of lobes circumferentially spaced about the central axis to define a plurality of openings circumferentially positioned therebetween, wherein each of the plurality of lobes comprises one or more bolt holes for mounting the substrate support within the processing chamber.

14. The substrate support of claim 13, wherein each of the plurality of openings has a cross-sectional area in a radially oriented plane extending radially inward from an outer radius of the plurality of lobes that is in a range from about 90 square inches (in2) to about 140 in2.

15. The substrate support of claim 13, further comprising a lift pin spider including a plurality of lift pins coupled to a ring body, wherein the ring body is positioned in a cavity at least partially defined in the mounting plate, and wherein an axial movement of the ring body within the cavity is configured to axially extend the lift pins through the upper end portion of the substrate support to lift the substrate from the upper end portion.

16. A processing chamber comprising: a central axis; a chamber body at least partially defining a processing cavity therein; a vacuum pump assembly;a chamber bucket coupled between the chamber body and the vacuum pump assembly along the central axis; a substrate support fixed within the processing cavity; and a plurality of axially oriented vacuum channels defined by the chamber bucket that are configured to direct fluid out of the processing cavity to the vacuum pump assembly, wherein each of the plurality of axially oriented vacuum channels has a cross-sectional area in a radial plane relative to the central axis that is in a range from about 90 square inches (in2) to about 140 in2.

17. The processing chamber of claim 16, wherein the substrate support comprises a connection flange, wherein the connection flange comprises a plurality of lobes circumferentially spaced about the central axis to define a plurality of openings circumferentially positioned therebetween, wherein each of the plurality of lobes comprises one or more bolt holes for mounting the substrate support to an upper end of the chamber bucket.

18. The processing chamber of claim 17, wherein the plurality of openings define inlets to the plurality of axially oriented vacuum channels.

19. The processing chamber of claim 18, wherein the substrate support further comprises a chamfer that is axially adjacent to the connection flange and that tapers radially inward toward the central axis.

20. The processing chamber of claim 19, wherein the chamfer is defined by a frustoconical surface that extends circumferentially about the central axis.

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