Substrate processing device and substrate processing method

Abstract

This substrate processing device comprises a first holding part that holds a substrate having a first main surface and a second main surface opposite to the first main surface with the second main surface of the substrate facing upward, a first rotation part that rotates the first holding part, a second holding part that holds a friction body for rubbing the second main surface of the substrate, a second rotation part that rotates the second holding part, a first movement part that moves the second holding part, and a control circuit. The substrate processing device comprises a porous chuck that jets a fluid toward the first main surface of the substrate and supports the substrate without contacting the substrate, and a fluid supply part that supplies the fluid to the porous chuck. The control circuit performs control for pressing the substrate from the side opposite to the friction body by the pressure of the fluid during rubbing of the substrate by the friction body.

Description

Substrate processing apparatus and substrate processing method

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method.

[0002] The substrate processing method described in Patent Document 1 involves supporting the outer edge of the substrate with a substrate support, with the back surface of the substrate facing up, and removing the material to be removed within a predetermined processing range from the inner periphery of the back surface of the substrate to the vicinity of the substrate support.

[0003] The substrate processing method described in Patent Document 2 polishes a glass substrate using a catalyst. The catalyst dissociates water molecules, breaks bonds between oxygen and other elements that make up the glass substrate, and helps generate decomposition products through hydrolysis.

[0004] Japanese Patent Publication No. 2015-111731 Japanese Patent Publication No. 2015-231939

[0005] One aspect of the present disclosure provides a technique for polishing the entire second main surface of a substrate uniformly in a short time while suppressing damage to the first main surface of the substrate.

[0006] A substrate processing apparatus according to one aspect of the present disclosure includes a first holding unit configured to hold a substrate having a first main surface and a second main surface facing opposite to the first main surface with the second main surface facing upward, a first rotating unit configured to rotate the first holding unit, a second holding unit configured to hold a friction body configured to rub the second main surface of the substrate, a second rotating unit configured to rotate the second holding unit, a first moving unit configured to move the second holding unit, and a control circuit. The substrate processing apparatus also includes a porous chuck configured to support the substrate without contacting the substrate by injecting a fluid toward the first main surface of the substrate, and a fluid supply unit configured to supply the fluid to the porous chuck. The control circuit controls the substrate to be pushed by the pressure of the fluid from the side opposite the friction body when the friction body rubs the substrate.

[0007] According to one aspect of the present disclosure, the entire second main surface of the substrate can be polished evenly in a short time, and damage to the first main surface of the substrate can be suppressed.

[0008] FIG. 1 is a cross-sectional view showing a substrate processing apparatus according to an embodiment. FIG. 2 is a cross-sectional view showing an enlarged portion of FIG. 1. FIG. 3A is a plan view showing an example of multiple divided bodies constituting a porous body, and FIG. 3B is a cross-sectional view showing an example of relative movement of the multiple divided bodies. FIG. 4 is a cross-sectional view showing an example of a catalyst for a friction body. FIG. 5 is a cross-sectional view showing a substrate processing apparatus according to a first modified example. FIG. 6 is a cross-sectional view showing a substrate processing apparatus according to a second modified example. FIG. 7A is a perspective view showing an example of a Bernoulli chuck, and FIG. 7B is a cross-sectional view of the Bernoulli chuck shown in FIG. 7A. FIG. 8A is a perspective view showing another example of a Bernoulli chuck, and FIG. 8B is a cross-sectional view of the Bernoulli chuck shown in FIG. 8A. FIG. 9A is a plan view showing an example of the arrangement of Bernoulli chucks, FIG. 9B is a cross-sectional view taken along line B-B in FIG. 9A, and FIG. 9C is a cross-sectional view taken along line C-C in FIG. 9A. FIG. 10 is a cross-sectional view showing a substrate processing apparatus according to a third modified example.

[0009] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. Note that in each drawing, the same or similar components are denoted by the same reference numerals, and descriptions thereof may be omitted. In this specification, the X-axis direction, Y-axis direction, and Z-axis direction are perpendicular to each other. The X-axis direction and Y-axis direction are horizontal directions, and the Z-axis direction is vertical. The X-axis direction includes the positive X-axis direction and the negative X-axis direction that is opposite to the positive X-axis direction. The Y-axis direction includes the positive Y-axis direction and the negative Y-axis direction that is opposite to the positive Y-axis direction. The Z-axis direction includes the positive Z-axis direction and the negative Z-axis direction that is opposite to the positive Z-axis direction.

[0010] A substrate processing apparatus 1 according to one embodiment will be described with reference to FIG. 1 . The substrate processing apparatus 1 processes a substrate W. The substrate W has a first main surface Wa and a second main surface Wb facing opposite to the first main surface Wa. The first main surface Wa may be a surface on which an electronic circuit is formed, and the second main surface Wb may be a surface on which no electronic circuit is formed. The substrate W has a semiconductor wafer such as a silicon wafer. The substrate W may further have a functional film formed on the surface of the semiconductor wafer. The functional film may be an oxide film, a nitride film, a metal film, or the like. The substrate processing apparatus 1 polishes the second main surface Wb of the substrate W.

[0011] The substrate processing apparatus 1 includes, for example, a first holding unit 10, a first rotating unit 15, a second holding unit 20, a second rotating unit 25, and a first moving unit 40. The first holding unit 10 holds the substrate W with the second main surface Wb of the substrate W facing upward. The first rotating unit 15 rotates the first holding unit 10. The second holding unit 20 holds a friction body 30 that rubs against the second main surface Wb of the substrate W. The second rotating unit 25 rotates the second holding unit 20. The first moving unit 40 moves the second holding unit 20.

[0012] The first holding unit 10 has, for example, gripping units 11 that grip the outer periphery of the substrate W. A plurality of gripping units 11 are provided at intervals along the outer periphery of the substrate W. The gripping units 11 are movable radially outward and inward of the substrate W. Gaps are formed between the plurality of gripping units 11, and these gaps discharge a fluid that is sprayed toward the first main surface Wa of the substrate W by a porous chuck 60 (described later).

[0013] The first rotating unit 15 rotates the first holding unit 10, thereby rotating the substrate W together with the first holding unit 10. The first rotating unit 15 includes a first motor 16 and the like. The first rotating unit 15 includes a first rotating shaft 17 in addition to the first motor 16. The rotational drive force of the first motor 16 is transmitted to the first rotating shaft 17 via, for example, a gear or a belt. The first rotating shaft 17 is provided, for example, vertically. The first holding unit 10 is provided at the upper end of the first rotating shaft 17, and the first holding unit 10 rotates together with the first rotating shaft 17.

[0014] The second holding unit 20 holds, for example, the friction body 30 from above. The friction body 30 is, for example, disk-shaped and is replaceably attached to the underside of the second holding unit 20. The second rotating unit 25 rotates the second holding unit 20, thereby rotating the friction body 30 together with the second holding unit 20. The second rotating unit 25 includes a second motor 26 and the like.

[0015] The second rotating unit 25 has a second rotating shaft 27 in addition to a second motor 26. The rotational driving force of the second motor 26 is transmitted to the second rotating shaft 27 via, for example, a gear or a belt. The second rotating shaft 27 is provided, for example, vertically. The second holding unit 20 is provided at the lower end of the second rotating shaft 27, and the second holding unit 20 rotates together with the second rotating shaft 27.

[0016] The first moving unit 40 moves the second holding unit 20 in the vertical direction, thereby raising and lowering the friction body 30 together with the second holding unit 20. When the first moving unit 40 raises and lowers the second holding unit 20 together with the second rotating unit 25, it is preferable that the second rotating unit 25 has a pressure detector 28 and an actuator 29 midway along the second rotating shaft 27.

[0017] The pressure detector 28 detects the pressure pressing the friction body 30 against the substrate W. Hereinafter, the pressure pressing the friction body 30 against the substrate W may be referred to as the polishing pressure. The pressure detector 28 is, for example, a load cell. The actuator 29 adjusts the length of the second rotating shaft 27 to adjust the polishing pressure. The actuator 29 is, for example, a piezoelectric element. By adjusting the length of the second rotating shaft 27, the pressure pressing the friction body 30 against the substrate W can be quickly adjusted.

[0018] The friction body 30 has a friction surface 30a that rubs against the second main surface Wb of the substrate W. When the size of the friction surface 30a is smaller than the size of the second main surface Wb of the substrate W, the first moving unit 40 moves the friction body 30 in the horizontal direction to rub the entire second main surface Wb of the substrate W. The first moving unit 40 moves the friction body 30 radially outward or radially inward of the substrate W.

[0019] The first moving unit 40 has, for example, a Z-axis guide 41, a Z-axis slider 42, and a Z-axis motor 43. The Z-axis motor 43 moves the Z-axis slider 42 along the Z-axis guide 41. The Z-axis slider 42 is mounted with the second rotating unit 25. The second rotating unit 25 and the second holding unit 20 move in the Z-axis direction together with the Z-axis slider 42.

[0020] The first moving unit 40 also has, for example, an X-axis guide 45, an X-axis slider 46, and an X-axis motor 47. The X-axis motor 47 moves the X-axis slider 46 along the X-axis guide 45. A Z-axis guide 41 is fixed to the X-axis slider 46. The Z-axis guide 41 and the like (including the second rotating unit 25 and the second holding unit 20) move in the X-axis direction together with the X-axis slider 46.

[0021] The substrate processing apparatus 1 includes a liquid supply unit 50 and a liquid recovery unit 55. The liquid supply unit 50 supplies a processing liquid to the second main surface Wb of the substrate W while the substrate W is being polished. The liquid supply unit 50 includes, for example, a nozzle 51. The liquid recovery unit 55 recovers the processing liquid that splashes from the second main surface Wb of the substrate W. The liquid recovery unit 55 includes, for example, a cup 56.

[0022] The nozzle 51 supplies the processing liquid, for example, to the center of the second main surface Wb of the rotating substrate W. The processing liquid spreads over the entire second main surface Wb of the substrate W due to centrifugal force. The liquid supply unit 50 has a supply line that sends the processing liquid to the nozzle 51. The liquid supply unit 50 may have an on-off valve, a flow rate controller, and a flow meter along the supply line.

[0023] The cup 56 surrounds the outer periphery of the substrate W held by the first holding part 10 and collects the processing liquid scattered from the outer periphery of the substrate W. A drain pipe 57 and an exhaust pipe 58 are provided at the bottom of the cup 56. The drain pipe 57 discharges the processing liquid accumulated inside the cup 56. The exhaust pipe 58 discharges gas accumulated inside the cup 56. The drain pipe 57 or the exhaust pipe 58 also discharges a fluid that is sprayed toward the first main surface Wa of the substrate W by a fluid supply part 67, which will be described later.

[0024] The substrate processing apparatus 1 includes a control circuit 90. The control circuit 90 is, for example, a computer, and includes an arithmetic unit 91 such as a CPU (Central Processing Unit), and a storage unit 92 such as a memory. The storage unit 92 stores programs that control various processes executed in the substrate processing apparatus 1. The control circuit 90 controls the operation of the substrate processing apparatus 1 by causing the arithmetic unit 91 to execute the programs stored in the storage unit 92.

[0025] The control circuit 90 includes electronic circuits such as a CPU, a GPU (Graphics Processing Unit), an FPGA (Field Programmable Gate Array), or an ASIC (Application Specific Integrated Circuit), and performs the various control operations described in this specification by executing instruction codes stored in memory or by being a circuit designed for a specific application.

[0026] 1 again, the operation of the substrate processing apparatus 1 will be described. First, the first holding unit 10 receives the substrate W from a transport device (not shown) and holds the substrate W with the second main surface Wb of the substrate W facing upward. Next, the first rotating unit 15 rotates the substrate W together with the first holding unit 10.

[0027] Thereafter, the first moving unit 40 lowers the friction body 30 together with the second holding unit 20, and the second rotating unit 25 rotates the friction body 30 together with the second holding unit 20. Next, the first moving unit 40 moves the friction body 30 radially outward or radially inward of the substrate W while keeping the friction body 30 in contact with the second main surface Wb of the substrate W.

[0028] It is preferable that the control circuit 90 controls the polishing pressure to be constant when moving the friction body 30 radially outward or radially inward of the substrate W. Even if the second main surface Wb of the substrate W is warped, the entire second main surface Wb of the substrate W can be polished evenly. Note that it is sufficient for the control circuit 90 to control the polishing pressure to be constant within an error range.

[0029] The substrate processing apparatus 1 may include a camera 70. The camera 70 measures the surface roughness (including the presence or absence of scratches) of the second main surface Wb after polishing. The control circuit 90 may re-polish a portion of the second main surface Wb based on the measurement result of the surface roughness of the second main surface Wb after polishing.

[0030] The substrate processing apparatus 1 of this embodiment includes a porous chuck 60 and a fluid supply unit 67. The porous chuck 60 supports the substrate W without contacting the substrate W by injecting a fluid toward the first main surface Wa of the substrate W. The fluid supply unit 67 supplies a fluid to the porous chuck 60. The fluid may be any of a gas, a liquid, or a mixed fluid of gas and liquid. The gas is, for example, air, nitrogen gas, or argon gas. The liquid is, for example, pure water. Because a liquid has a higher density than a gas, it is easier to apply a uniform pressure to the substrate W.

[0031] The porous chuck 60 is provided on the opposite side of the friction body 30 across the substrate W, i.e., below the substrate W. When the friction body 30 rubs the substrate W, the control circuit 90 controls the substrate W to be pushed by the fluid pressure from the opposite side of the friction body 30 (i.e., the lower side). This control provides the following effects (A), (B), and (C).

[0032] (A) The porous chuck 60 supports the substrate W without contacting the substrate W by injecting a fluid toward the first main surface Wa of the substrate W, thereby preventing the occurrence of contact scratches without applying a protective film to the first main surface Wa of the substrate W and eliminating the need to remove the protective film. Preventing the occurrence of contact scratches is particularly effective when the first main surface Wa is a surface on which electronic circuits are formed.

[0033] (B) The porous chuck 60 uses fluid pressure to push back the substrate W from the opposite side (i.e., the lower side) of the friction body 30, thereby suppressing deflection of the substrate W and enabling uniform polishing of the entire second main surface Wb of the substrate W. Note that if the porous chuck 60 is not provided and the first holding unit 10 holds only the outer periphery of the substrate W, the friction body 30 pressing against the center of the substrate W will cause deflection of the substrate W.

[0034] (C) The porous chuck 60 pushes back the substrate W from the opposite side (i.e., the lower side) of the friction body 30 using fluid pressure, which allows the polishing pressure to be set high and the polishing time to be shortened. Setting the polishing pressure high is particularly effective when polishing the substrate W by a catalyst referred etching (CARE) method, as will be described later. The CARE method produces smaller surface roughness after polishing than other polishing methods, but the polishing rate is slower.

[0035] The porous chuck 60 may be fixed to the first holding part 10. In this case, the porous chuck 60 is rotated together with the first holding part 10. The porous chuck 60 does not have to be fixed to the first holding part 10. When the friction body 30 rubs the substrate W, it is only necessary that the substrate W can be pushed by the pressure of the fluid from the side opposite to the friction body 30 (i.e., the lower side).

[0036] The porous chuck 60 has a porous body 61. The porous body 61 has an ejection surface 61a on its upper surface, and ejects a fluid from the ejection surface 61a toward the first main surface Wa of the substrate W. The size of the ejection surface 61a of the porous body 61 may be equal to or larger than the size of the first main surface Wa of the substrate W. In this case, the entire first main surface Wa of the substrate W can be stably supported.

[0037] 3, the porous body 61 may have a plurality of divided bodies 61A, 61B, and 61C. For example, the porous body 61 is divided in the radial direction of the substrate W, and the plurality of divided bodies 61A, 61B, and 61C are arranged concentrically. Although not shown, at least one of the plurality of divided bodies 61A, 61B, and 61C may be further divided in the circumferential direction of the substrate W.

[0038] The substrate processing apparatus 1 includes a second moving unit 63 that moves the plurality of divided bodies 61A, 61B, and 61C relative to one another. The second moving unit 63 includes a motor and the like. In this embodiment, the number of motors is the same as the number of divided bodies 61A, 61B, and 61C, but may be less. It is sufficient that the plurality of divided bodies 61A, 61B, and 61C can be moved relative to one another.

[0039] The second moving part 63 moves the plurality of divided bodies 61A, 61B, 61C relatively in the injection direction (positive direction of the Z axis) or the direction opposite to the injection direction (negative direction of the Z axis) of the fluid of the porous body 61. This makes it possible to reduce variations in the distance between the substrate W and the porous body 61, even if the first main surface Wa of the substrate W is warped, and to stably support the substrate W by the pressure of the fluid.

[0040] As shown in FIG. 4 , the friction body 30 preferably has a catalyst 31. The catalyst 31 generates reactive species from the processing liquid that react with the substrate W. The substrate W can be polished by a catalyst referred etching (CARE) method. The friction body 30 has the catalyst 31 on its friction surface 30 a. The friction surface 30 a is a flat surface. Convex portions of the second main surface Wb come into contact with the friction surface 30 a, and the convex portions are selectively etched. As a result, the second main surface Wb is planarized.

[0041] The catalyst 31 is made of, for example, a transition metal element, and is preferably made of Pt, Au, Ag, Cu, Ni, Cr, or Mo. The catalyst 31 may be a single metal or an alloy. The second main surface Wb of the substrate W is made of an insulating film, a conductive film, a semiconductor film, or a semiconductor substrate. The insulating film may be, for example, SiO ２ or a Low-k material, etc. The conductive film is, for example, a Cu film or a W film, etc. The semiconductor film is, for example, a polycrystalline silicon film or an amorphous silicon film, etc. The semiconductor substrate is, for example, a silicon wafer, etc.

[0042] The processing liquid used in catalyst-based etching is selected appropriately depending on the combination of the material of the catalyst 31 and the material of the second main surface Wb of the substrate W, but preferably contains water. Decomposition products can be generated by hydrolysis, and the decomposition products can be dissolved in water. Examples of the processing liquid include diluted hydrofluoric acid, pure water, water containing dissolved oxygen, ozone water, and hydrogen peroxide solution.

[0043] Next, a substrate processing apparatus 1 according to a first modified example will be described with reference to FIG. 5 . Differences from the above embodiment will be mainly described below. The size of the ejection surface 61a of the porous body 61 of the porous chuck 60 of this modified example is smaller than the size of the first main surface Wa of the substrate W. The porous chuck 60 of this modified example is not fixed to the first holding part 10 and does not rotate together with the first holding part 10. The substrate processing apparatus 1 of this modified example includes a third moving part 64 that moves the porous chuck 60. The third moving part 64 includes a motor and the like.

[0044] The third moving unit 64 moves the porous chuck 60 radially outward or radially inward of the substrate W. The control circuit 90 controls the friction body 30 and the porous chuck 60 to move simultaneously in the same direction when the friction body 30 is moved radially outward or radially inward of the substrate W while pressing the friction body 30 against the substrate W. The porous chuck 60 can be disposed directly below the friction body 30, and deflection of the substrate W can be suppressed by the pressure of the fluid.

[0045] The third moving unit 64 may raise and lower the porous chuck 60. The control circuit 90 may control the raising and lowering of the porous chuck 60 when moving the porous chuck 60 radially outward or radially inward of the substrate W. Even if the first main surface Wa of the substrate W is warped, variation in the gap between the substrate W and the porous chuck 60 can be reduced, and the substrate W can be stably supported by the pressure of the fluid.

[0046] 6 to 9, a substrate processing apparatus 1 according to a second modification will be described. The following mainly focuses on the differences from the above embodiment. The substrate processing apparatus 1 of this modification includes a Bernoulli chuck 65 instead of the porous chuck 60.

[0047] 7A, the Bernoulli chuck 65 has a plurality of nozzles surrounding the center of the Bernoulli chuck 65, and fluid is ejected radially from the plurality of nozzles, thereby generating suction pressure at the center of the Bernoulli chuck 65, as shown in FIG.

[0048] Alternatively, as shown in Fig. 8(A), the Bernoulli chuck 65 has a plurality of nozzles surrounding the center of the Bernoulli chuck 65, and the fluid is ejected from the plurality of nozzles in a vortex shape, thereby generating a suction pressure at the center of the Bernoulli chuck 65, as shown in Fig. 8(B).

[0049] The Bernoulli chuck 65 generates suction pressure by spraying fluid radially or vortex-wise toward the first main surface Wa of the substrate W, thereby supporting the substrate W without contacting the substrate W. The fluid supply unit 67 supplies fluid to the Bernoulli chuck 65. The fluid may be any of gas, liquid, or a mixture of gas and liquid. The gas may be, for example, air, nitrogen gas, or argon gas. The liquid may be, for example, pure water. Because liquid has a higher density than gas, it is easier to apply uniform pressure to the substrate W.

[0050] The Bernoulli chuck 65 is provided on the opposite side of the friction body 30 across the substrate W, i.e., below the substrate W. When the friction body 30 rubs the substrate W, the control circuit 90 controls the substrate W to be pushed by the pressure of the fluid from the opposite side of the friction body 30 (i.e., from the lower side). Therefore, in this modified example, the above-mentioned effects (A), (B), and (C) can be obtained, as in the above-mentioned embodiment.

[0051] 9(A) and 9(C), the first holding unit 10 may include gap pins 12. Similar to the grip unit 11, a plurality of gap pins 12 are provided at intervals along the outer periphery of the substrate W. Gaps are formed between the plurality of gap pins 12, and these gaps discharge the fluid that is sprayed by the Bernoulli chuck 65 toward the first main surface Wa of the substrate W. While the grip unit 11 clamps the substrate W from both the top and bottom, the gap pins 12 support the substrate W from below.

[0052] Since the Bernoulli chuck 65 generates suction pressure at its center, the gap pins 12 do not need to support the substrate W from above. When the Bernoulli chuck 65 is used, the gripping portion 11 may be used instead of the gap pins 12.

[0053] 9(B), the Bernoulli chuck 65 may be fixed to the first holding part 10 and rotate together with the first holding part 10. A plurality of Bernoulli chucks 65 may be provided so as to spray the fluid over the entire first main surface Wa of the substrate W. The plurality of Bernoulli chucks 65 are arranged, for example, concentrically. Note that the arrangement of the plurality of Bernoulli chucks 65 is not particularly limited.

[0054] Although not shown, the substrate processing apparatus 1 may be provided with a second moving unit that relatively moves the plurality of Bernoulli chucks 65 in the fluid ejection direction (positive direction of the Z axis) or the direction opposite to the ejection direction (negative direction of the Z axis). This reduces variations in the distance between the substrate W and the Bernoulli chucks 65, and enables the substrate W to be stably supported by the pressure of the fluid, even if the first main surface Wa of the substrate W is warped.

[0055] Next, a substrate processing apparatus 1 according to a third modification will be described with reference to Fig. 10. Differences from the above embodiment will be mainly described below. The Bernoulli chuck 65 of this modification is not fixed to the first holding part 10 and does not rotate together with the first holding part 10. The substrate processing apparatus 1 of this modification includes a third moving part 64 that moves the Bernoulli chuck 65.

[0056] The third moving unit 64 moves the Bernoulli chuck 65 radially outward or radially inward of the substrate W. The control circuit 90 controls the friction body 30 and the Bernoulli chuck 65 to move simultaneously in the same direction when the friction body 30 is moved radially outward or radially inward of the substrate W while being pressed against the substrate W. The Bernoulli chuck 65 can be disposed directly below the friction body 30, and deflection of the substrate W can be suppressed by the pressure of the fluid.

[0057] The third moving unit 64 may raise and lower the Bernoulli chuck 65. The control circuit 90 may control the raising and lowering of the Bernoulli chuck 65 when moving the Bernoulli chuck 65 radially outward or radially inward of the substrate W. Even if the first main surface Wa of the substrate W is warped, variations in the gap between the substrate W and the Bernoulli chuck 65 can be reduced, and the substrate W can be stably supported by the pressure of the fluid.

[0058] Although the embodiments of the substrate processing apparatus and substrate processing method according to the present disclosure have been described above, the present disclosure is not limited to the above embodiments. Various changes, modifications, substitutions, additions, deletions, and combinations are possible within the scope of the claims. These naturally fall within the technical scope of the present disclosure.

[0059] This application claims priority based on Japanese Patent Application No. 2024-021618 filed with the Japan Patent Office on February 16, 2024, and Japanese Patent Application No. 2024-212315 filed with the Japan Patent Office on December 5, 2024. The entire contents of Japanese Patent Application Nos. 2024-021618 and 2024-212315 are incorporated by reference into this application.

[0060] REFERENCE SIGNS LIST 1 substrate processing apparatus 10 first holding section 15 first rotating section 20 second holding section 25 second rotating section 30 friction body 40 first moving section 60 porous chuck 65 Bernoulli chuck 67 fluid supply section 90 control circuit W substrate Wa first main surface Wb second main surface

Claims

1. A substrate processing apparatus comprising: a first holding unit that holds a substrate with the second main surface facing upward, the substrate having a first main surface and a second main surface facing opposite to the first main surface; a first rotating unit that rotates the first holding unit; a second holding unit that holds a friction body that rubs the second main surface of the substrate; a second rotating unit that rotates the second holding unit; a first moving unit that moves the second holding unit; and a control circuit; a porous chuck that supports the substrate without contacting the substrate by injecting a fluid toward the first main surface of the substrate; and a fluid supply unit that supplies the fluid to the porous chuck; and the control circuit controls the substrate to be pushed by the pressure of the fluid from the opposite side of the friction body when the substrate is rubbed by the friction body.

2. The substrate processing apparatus of claim 1, wherein the porous chuck has a porous body, the porous body has an ejection surface on its upper surface, and ejects the fluid from the ejection surface onto the first main surface of the substrate, and the size of the ejection surface of the porous body is equal to or larger than the size of the first main surface of the substrate.

3. The substrate processing apparatus according to claim 2, wherein the porous body has a plurality of divided bodies, and the substrate processing apparatus is provided with a second moving unit that moves the plurality of divided bodies relatively in the direction of injection of the fluid or in the direction opposite to the injection direction.

4. The substrate processing apparatus of claim 1, wherein the friction body has a friction surface that rubs against the second main surface of the substrate, the friction surface being smaller in size than the second main surface of the substrate; the porous chuck has a porous body, the porous body having an ejection surface on its upper surface that ejects the fluid from the ejection surface onto the first main surface of the substrate, the ejection surface of the porous body being smaller in size than the first main surface of the substrate; the substrate processing apparatus is provided with a third moving unit that moves the porous chuck; and the control circuit controls the friction body and the porous chuck to move simultaneously in the same direction when moving the friction body radially outward or radially inward while pressing it against the substrate.

5. The substrate processing apparatus of claim 1, wherein the first moving unit moves the second holding unit together with the second rotating unit, the second rotating unit has a pressure detector that detects the pressure with which the friction body is pressed against the substrate, and an actuator that adjusts the pressure with which the friction body is pressed against the substrate, and the control circuit controls the pressure with which the friction body is pressed against the substrate to be constant when moving the friction body radially outward or radially inward while pressing it against the substrate.

6. A substrate processing apparatus comprising: a first holding unit that holds a substrate having a first main surface and a second main surface facing opposite to the first main surface, with the second main surface facing upward; a first rotating unit that rotates the first holding unit; a second holding unit that holds a friction body that rubs the second main surface of the substrate; a second rotating unit that rotates the second holding unit; a first moving unit that moves the second holding unit; and a control circuit; a Bernoulli chuck that sprays fluid radially or vortex-wise toward the first main surface of the substrate to generate suction pressure and support the substrate without contacting the substrate; and a fluid supply unit that supplies the fluid to the Bernoulli chuck; and the control circuit controls the substrate to be pushed by the pressure of the fluid from the opposite side to the friction body when the substrate is rubbed by the friction body.

7. The substrate processing apparatus according to claim 6, wherein the substrate processing apparatus has a plurality of the Bernoulli chucks, and the substrate processing apparatus is provided with a second moving unit that moves the plurality of Bernoulli chucks relatively in the injection direction of the fluid or in a direction opposite to the injection direction.

8. The substrate processing apparatus according to claim 6, wherein the friction body has a friction surface that rubs against the second main surface of the substrate, the size of the friction surface being smaller than the size of the second main surface of the substrate, the substrate processing apparatus is provided with a third moving unit that moves the Bernoulli chuck, and the control circuit controls the friction body and the Bernoulli chuck to move simultaneously in the same direction when moving the friction body radially outward or radially inward of the substrate while pressing it against the substrate.

9. The substrate processing apparatus of claim 6, wherein the first moving unit moves the second holding unit together with the second rotating unit, the second rotating unit has a pressure detector that detects the pressure with which the friction body is pressed against the substrate, and an actuator that adjusts the pressure with which the friction body is pressed against the substrate, and the control circuit controls the pressure with which the friction body is pressed against the substrate to be constant when moving the friction body radially outward or radially inward while pressing it against the substrate.

10. A substrate processing apparatus according to any one of claims 1 to 9, further comprising a liquid supply unit that supplies a processing liquid to the second main surface of the substrate, and the friction body has a catalyst that generates a reactive species from the processing liquid that reacts with the substrate.

11. The substrate processing apparatus of claim 10, wherein the processing liquid comprises water.

12. A substrate processing method, comprising polishing the substrate with the friction body using the substrate processing apparatus according to any one of claims 1 to 9.

13. The substrate processing method according to claim 12, further comprising supplying a processing liquid to the second main surface of the substrate, wherein the friction body has a catalyst that generates a reactive species from the processing liquid that reacts with the substrate.

14. The substrate processing method according to claim 13, wherein the processing liquid includes water.

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