Spin micro-system based on spin orbit torque, and preparation method and chip

Abstract

The present disclosure can be applied in the technical field of spin electronics. Provided are a spin micro-system based on spin orbit torque, and a preparation method and a chip. The spin micro-system based on spin orbit torque comprises: a spin sensor device, which is configured to sense an external magnetic field and generate a first spin current in a first heavy-metal layer, so as to convert the external magnetic field into an electrical signal and output the electrical signal to a spin memory device; a spin logic device, which is configured to generate a second spin current in a second heavy-metal layer, so as to perform logic operations on the electrical signal to obtain magnetic field information of the external magnetic field, and output the magnetic field information to the spin memory device; the spin memory device, which is configured to receive the electrical signal and the magnetic field information and generate a third spin current in a third heavy-metal layer, so as to output the electrical signal to the spin logic device and output the magnetic field information to a spin oscillator device; and the spin oscillator device, which is configured to receive the magnetic field information and generate a fourth spin current in a fourth heavy-metal layer, so as to convert the magnetic field information into a microwave signal.

Description

Spin microsystem, preparation method and chip based on spin-orbit torque Technical Field

[0001] The present disclosure relates to the field of spin electronics technology, and in particular to a spin microsystem based on spin-orbit torque, a preparation method, and a chip. Background Art

[0002] Spin Orbit Torque (SOT) refers to adding a heavy metal film under the free layer of the magnetic tunnel junction. The current flowing through the heavy metal film can induce a torque to drive the magnetization reversal of the free layer.

[0003] In the process of realizing the concept of the present disclosure, the inventors discovered that there are at least the following problems in the related art: the spintronic devices in the related art cannot effectively improve system performance.

[0004] Summary of the Invention

[0005] In view of the above problems, the present disclosure provides a spin microsystem based on spin-orbit torque, a preparation method and a chip.

[0006] A first aspect of the present disclosure provides a spin microsystem based on spin-orbit torque, comprising:

[0007] A spin sensor device configured to sense an external magnetic field and generate a first spin current in the first heavy metal layer to convert the external magnetic field into an electrical signal and output it to the spin memory device;

[0008] a spin logic device configured to generate a second spin current in the second heavy metal layer to perform a logic operation on the electrical signal to obtain magnetic field information about the external magnetic field, and output the magnetic field information to the spin memory device;

[0009] a spin memory device configured to receive the electrical signal and the magnetic field information, generate a third spin current in a third heavy metal layer to output the electrical signal to the spin logic device and output the magnetic field information to the spin oscillation device;

[0010] The spin oscillation device is configured to receive the magnetic field information and generate a fourth spin current in the fourth heavy metal layer to convert the magnetic field information into a microwave signal.

[0011] According to an embodiment of the present disclosure, the spin sensor device includes a first top electrode, a first pinned layer, a first reference layer, a first barrier layer, a first free layer, the first heavy metal layer, and a first bottom electrode. The first top electrode includes a first top electrode port, and the first bottom electrode includes four second bottom electrode ports.

[0012] The spin sensor device has a cross-shaped structure, and the first pinned layer, the first reference layer, the first barrier layer, and the first free layer form a first tunnel junction of the spin sensor device.

[0013] The spin sensor device is further configured to utilize the first bottom electrode port to flow a first current induced by the external magnetic field, and when the first heavy metal layer receives the first current, generate the first spin current to change the magnetic moment state in the first free layer, utilize the first top electrode port to detect the resistance of the first tunnel junction of the spin sensor device, and generate the electrical signal based on the resistance of the first tunnel junction and output it to the spin memory device.

[0014] According to an embodiment of the present disclosure, the size of the first tunnel junction is 10 to 50 microns, the thickness of the first heavy metal layer is 10 to 50 nanometers, the thickness of the first reference layer is 0.8 to 1.3 nanometers, and the thickness of the first barrier layer is 1 to 3 nanometers.

[0015] According to an embodiment of the present disclosure, the spin logic device includes a second top electrode, a second pinned layer, a second reference layer, a second barrier layer, a second free layer, the second heavy metal layer, and a second bottom electrode, wherein the second top electrode includes a second top electrode port, the second bottom electrode includes two second bottom electrode ports, and the second pinned layer, the second reference layer, the second barrier layer, and the second free layer form a second tunnel junction of the spin logic device.

[0016] The above-mentioned spin logic device is also configured to receive the electrical signal from the above-mentioned spin memory device using the above-mentioned second bottom electrode port, and generate the above-mentioned second spin current to change the magnetic moment state in the above-mentioned second free layer when the second current flows into the above-mentioned second heavy metal layer, thereby performing logical operations on the above-mentioned electrical signal to obtain magnetic field information about the above-mentioned external magnetic field, and output the above-mentioned magnetic field information to the above-mentioned spin memory device.

[0017] According to an embodiment of the present disclosure, the size of the second tunnel junction is 10-100 nanometers, the thickness of the second heavy metal layer is 10-50 nanometers, the thickness of the second reference layer is 0.8-1.3 nanometers, and the thickness of the second barrier layer is 1-3 nanometers.

[0018] According to an embodiment of the present disclosure, the spin memory device includes a third top electrode, a third pinned layer, a third reference layer, a third barrier layer, a third free layer, the third heavy metal layer, and a third bottom electrode. The third top electrode includes a third top electrode port, the third bottom electrode includes two third bottom electrode ports, and the third pinned layer, the third reference layer, the third barrier layer, and the third free layer form a third tunnel junction of the spin memory device.

[0019] The above-mentioned spin memory device is also configured to receive the above-mentioned electrical signal and the above-mentioned magnetic field information when the third current flows from the above-mentioned third top electrode port through the above-mentioned third tunnel junction, and to generate the above-mentioned third spin current in the above-mentioned third heavy metal layer when the fourth current flows from one above-mentioned third bottom electrode port to another above-mentioned third bottom electrode port, so as to change the magnetic moment state in the above-mentioned third free layer, thereby outputting the above-mentioned electrical signal to the above-mentioned spin logic device and outputting the above-mentioned magnetic field information to the spin oscillation device, wherein the current value of the above-mentioned third current is smaller than the current value of the fourth current.

[0020] According to an embodiment of the present disclosure, the size of the third tunnel junction is 10-100 nanometers, the thickness of the third heavy metal layer is 10-50 nanometers, the thickness of the third reference layer is 0.8-1.3 nanometers, and the thickness of the third barrier layer is 1-3 nanometers.

[0021] According to an embodiment of the present disclosure, the spin oscillation device includes a fourth barrier layer, a fourth free layer, the fourth heavy metal layer, and a fourth bottom electrode, wherein the fourth bottom electrode includes two fourth bottom electrode ports;

[0022] The spin oscillator device is further configured to generate the fourth spin current when the fifth current enters the fourth heavy metal layer from the fourth bottom electrode port, so as to cause the magnetic moment in the fourth free layer to oscillate at high frequency, thereby converting the magnetic field information into a microwave signal.

[0023] According to an embodiment of the present disclosure, the spin oscillator device is a bridge structure with wide ends and narrow middle;

[0024] The thickness of the fourth heavy metal layer is 10-50 nanometers, the thickness of the fourth reference layer is 0.8-1.3 nanometers, the thickness of the fourth barrier layer is 1-3 nanometers, and the width of the narrow bridge region of the spin oscillator device is 20-200 nanometers.

[0025] According to an embodiment of the present disclosure, the spin microsystem further includes a control device configured to generate control instructions so that the spin sensor device, the spin logic device, the spin memory device, and the spin oscillation device operate under the control of the control instructions.

[0026] A second aspect of the present disclosure provides a method for preparing a spin microsystem based on spin-orbit torque, comprising:

[0027] Preparation of the bottom electrode of the spin microsystem;

[0028] depositing a heavy metal layer, a free layer, a barrier layer, a reference layer, and a pinning layer of the spin microsystem;

[0029] Performing a first etching process, and finishing the etching to the bottom electrode, so as to form the shape of the heavy metal layer of the spin sensor device, the spin logic device, the spin memory device, and the spin oscillation device in the spin microsystem;

[0030] Performing a second etching process until the barrier layer is reached, thereby forming the pattern structures of the oscillating device and the sensor device;

[0031] Performing a third etching process until the heavy metal layer is completely etched, thereby forming a pattern structure of the memory device and the logic device;

[0032] preparing a protective layer;

[0033] preparing through holes on the surface of the protective layer;

[0034] Prepare the top electrode.

[0035] A third aspect of the present disclosure provides a chip, including:

[0036] Such as the spin microsystem based on spin-orbit torque mentioned above.

[0037] According to the spin microsystem, preparation method and chip based on spin-orbit torque provided by the present disclosure, by integrating a spin sensor device, a spin logic device, a spin storage device and a spin oscillation device into the same system, the spin microsystem is no longer a spin electronic device with only a single function. At the same time, the spin microsystem realizes functions such as sensing, logical operation, storage and oscillation based on spin-orbit torque, thereby improving the performance of the spin microsystem. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] The above contents and other objects, features and advantages of the present disclosure will become more apparent through the following description of the embodiments of the present disclosure with reference to the accompanying drawings, in which:

[0039] FIG1 schematically shows a block diagram of a spin microsystem based on spin-orbit torque according to an embodiment of the present disclosure;

[0040] FIG2 schematically shows a structural diagram of a spin sensor device according to an embodiment of the present disclosure;

[0041] FIG3 schematically shows a schematic diagram of magnetic moment distribution of the first free layer when the first heavy metal layer is made of different materials according to an embodiment of the present disclosure;

[0042] FIG4 schematically shows a structural diagram of a spin logic device according to an embodiment of the present disclosure;

[0043] FIG5 schematically shows a structural diagram of a spin memory device according to an embodiment of the present disclosure;

[0044] FIG6 schematically shows a circuit diagram of a spin memory device according to an embodiment of the present disclosure;

[0045] FIG7 schematically shows a structural diagram of a spin oscillation device according to an embodiment of the present disclosure;

[0046] FIG8 schematically shows a flow chart of a method for preparing a spin microsystem based on spin-orbit torque according to an embodiment of the present disclosure;

[0047] FIG9 schematically shows a structural diagram of a spin microsystem based on spin-orbit torque according to an embodiment of the present disclosure;

[0048] FIG10 schematically shows a data flow diagram of a spin microsystem based on spin-orbit torque according to an embodiment of the present disclosure; and

[0049] FIG11 schematically shows a block diagram of a chip according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0050] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. However, it should be understood that these descriptions are merely exemplary and are not intended to limit the scope of the present disclosure. In the detailed description below, for ease of explanation, many specific details are set forth to provide a comprehensive understanding of the embodiments of the present disclosure. However, it is apparent that one or more embodiments may also be implemented without these specific details. In addition, in the following description, descriptions of well-known structures and technologies are omitted to avoid unnecessary confusion of the concepts of the present disclosure.

[0051] The terms used herein are only for describing specific embodiments and are not intended to limit the present disclosure. The terms "comprise," "include," etc. used herein indicate the presence of the features, steps, operations, and / or components, but do not exclude the presence or addition of one or more other features, steps, operations, or components.

[0052] All terms used herein (including technical and scientific terms) have the meanings commonly understood by those skilled in the art unless otherwise defined. It should be noted that the terms used herein should be interpreted as having a meaning consistent with the context of this specification and should not be interpreted in an idealized or overly rigid manner.

[0053] When expressions such as "at least one of A, B and C, etc." are used, they should generally be interpreted in accordance with the meaning of the expression commonly understood by those skilled in the art (for example, "a system having at least one of A, B and C" should include but is not limited to a system having A alone, B alone, C alone, A and B, A and C, B and C, and / or A, B, C, etc.).

[0054] As the size of traditional semiconductor devices continues to approach physical limits and Moore's Law gradually breaks down, the research and development of new electronic devices is gaining increasing attention to further advance electronic technology. Spintronic devices are a new type of electronic device that achieves information sensing, storage, transmission, and processing by regulating and detecting the electron spin state and the magnetic moment of matter. Compared to traditional electronic devices that only emphasize charge properties, spintronic devices introduce spin as a new degree of freedom, making them a promising class of electronic devices. Electron spin and the magnetic moment of matter can be manipulated magnetically and electrically using the SOT effect. Based on this, a range of spintronic devices have been developed, showing great potential for applications in magnetic sensing, information technology, energy conversion, and other fields.

[0055] Common spintronic devices include magnetoresistive sensors, magnetoresistive random access memories (MRRAMs), spin nanooscillators, and spin logic devices. However, existing research has largely focused on the development and large-scale integration of a single device type, neglecting the study of hardware systems. However, the improvement in overall system performance achieved by a single spintronic device is limited. Beyond integrated storage and computing devices, the integration of diverse device types remains a significant research gap.

[0056] In view of this, an embodiment of the present disclosure provides a spin microsystem based on spin-orbit torque, including: a spin sensor device, configured to sense an external magnetic field, and generate a first spin current in a first heavy metal layer to convert the external magnetic field into an electrical signal and output it to a spin memory device; a spin logic device, configured to generate a second spin current in a second heavy metal layer to perform a logical operation on the electrical signal to obtain magnetic field information about the external magnetic field, and output the magnetic field information to the spin memory device; a spin memory device, configured to receive electrical signals and magnetic field information, generate a third spin current in a third heavy metal layer to output the electrical signal to the spin logic device and output the magnetic field information to the spin oscillation device; a spin oscillation device, configured to receive magnetic field information, and generate a fourth spin current in a fourth heavy metal layer to convert the magnetic field information into a microwave signal.

[0057] FIG1 schematically shows a block diagram of a spin microsystem based on spin-orbit torque according to an embodiment of the present disclosure.

[0058] As shown in FIG. 1 , a spin microsystem 100 includes a spin sensor device 110 , a spin logic device 120 , a spin memory device 130 , and a spin oscillation device 140 .

[0059] The spin sensor device 110 is configured to sense an external magnetic field and generate a first spin current in the first heavy metal layer to convert the external magnetic field into an electrical signal and output it to the spin memory device.

[0060] The spin logic device 120 is configured to generate a second spin current in the second heavy metal layer to perform a logic operation on the electrical signal to obtain magnetic field information about the external magnetic field, and output the magnetic field information to the spin memory device.

[0061] The spin memory device 130 is configured to receive an electrical signal and magnetic field information, generate a third spin current in the third heavy metal layer to output the electrical signal to the spin logic device and output the magnetic field information to the spin oscillation device.

[0062] The spin oscillator device 140 is configured to receive magnetic field information and generate a fourth spin current in the fourth heavy metal layer to convert the magnetic field information into a microwave signal.

[0063] According to an embodiment of the present disclosure, the external magnetic field may be the magnetic field to be detected.

[0064] According to embodiments of the present disclosure, a first heavy metal layer can be used to generate a first spin current in a spin sensor device. A second heavy metal layer can be used to generate a second spin current in a spin logic device. A third heavy metal layer can be used to generate a third spin current in a spin memory device. A fourth heavy metal layer can be used to generate a fourth spin current in a spin oscillator device. The first, second, third, and fourth heavy metal layers can be made of metals such as tantalum and tungsten.

[0065] According to the embodiments of the present disclosure, spin sensor devices, spin logic devices, spin memory devices, and spin oscillator devices can all operate through the SOT effect. In spin sensor devices, the SOT effect occurs by generating a first spin current in the first heavy metal layer. In spin logic devices, the SOT effect occurs by generating a second spin current in the second heavy metal layer. In spin memory devices, the SOT effect occurs by generating a third spin current in the third heavy metal layer. In spin oscillator devices, the SOT effect occurs by generating a fourth spin current in the fourth heavy metal layer.

[0066] According to the embodiments of the present disclosure, spintronic devices based on the SOT effect offer advantages over traditional electronic devices, such as low power consumption, ease of integration, and high sensitivity. The development of spintronic devices is significant in overcoming the limitations of traditional electronic devices, thereby achieving higher device density, lower power consumption, and increased functionality.

[0067] According to the embodiments of the present disclosure, by integrating spin sensor devices, spin logic devices, spin memory devices and spin oscillation devices into the same system, the spin microsystem is no longer a spin electronic device with only a single function. At the same time, functions such as sensing, logical operations, storage and oscillation based on spin-orbit torque are realized in the spin microsystem, thereby improving the performance of the spin microsystem.

[0068] According to an embodiment of the present disclosure, the spin microsystem further includes a control device for generating control instructions to enable the spin sensor device, the spin logic device, the spin memory device, and the spin oscillation device to operate under the control of the control instructions.

[0069] According to an embodiment of the present disclosure, the control device can control each spin device to operate according to the instruction transmitted from the spin memory device.

[0070] FIG2 schematically shows a structural diagram of a spin sensor device according to an embodiment of the present disclosure.

[0071] As shown in FIG2 , the spin sensor device 200 includes a first top electrode 201 , a first pinned layer 202 , a first reference layer 203 , a first barrier layer 204 , a first free layer 205 , a first heavy metal layer 206 , and a first bottom electrode 207 . The first top electrode 201 includes a first top electrode port, and the first bottom electrode 207 includes four second bottom electrode ports.

[0072] The spin sensor device 200 has a cross-shaped structure. The first pinned layer 202 , the first reference layer 203 , the first barrier layer 204 and the first free layer 205 form a first tunnel junction 210 of the spin sensor device 200 .

[0073] The size of the first tunnel junction 210 is 10-50 microns, the thickness of the first heavy metal layer 206 is 10-50 nanometers, the thickness of the first reference layer 203 is 0.8-1.3 nanometers, and the thickness of the first barrier layer 204 is 1-3 nanometers.

[0074] According to an embodiment of the present disclosure, the first pinned layer can be made of synthetic antiferromagnetic (i.e., SAF) material, the first reference layer can be made of cobalt iron boron (i.e., CoFeB) material, the first barrier layer can be made of magnesium oxide (i.e., MgO) material, and the first free layer can be made of cobalt iron boron (i.e., CoFeB) material.

[0075] According to the embodiments of the present disclosure, the first heavy metal layer can convert the electric current into a spin current, and the interface between the first free layer and the first barrier layer induces a thin first free layer with magnetic anisotropy in the direction perpendicular to the interface. The spin current from the first heavy metal layer enters the first free layer, and the magnetic moment reversal or continuous precession in the first free layer is regulated by the SOT effect. The first free layer, the first barrier layer, the first reference layer and the first pinned layer constitute a magnetic first tunnel junction MTJ structure, and the resistance of the first tunnel junction can be used to reflect the magnetic moment state of the first free layer. The artificial synthetic antiferromagnetism of the first pinned layer is used to fix the magnetic moment direction of the first reference layer. Common vertically pinned artificial synthetic antiferromagnetism has a multi-layer stack of ferromagnetic metals (such as cobalt Co, nickel Ni, etc.), and the thickness of a single metal layer is generally 0.3-1nm.

[0076] The spin sensor device 200 can also be used to utilize the first current generated by the induction external magnetic field flowing into the first bottom electrode port. When the first heavy metal layer receives the first current, a first spin current is generated to change the magnetic moment state in the first free layer. The first top electrode port is used to detect the resistance of the first tunnel junction of the spin sensor device, and an electrical signal is generated based on the resistance of the first tunnel junction and output to the spin memory device.

[0077] According to the embodiment of the present disclosure, the first tunnel junction of the spin sensor device is large in size. Therefore, the magnetic moment of the free layer in the junction region of the first tunnel junction cannot be regarded as a single magnetic moment, and its magnetic moment distribution is related to the first heavy metal layer.

[0078] FIG3 schematically shows a schematic diagram of magnetic moment distribution of the first free layer when the first heavy metal layer is made of different materials according to an embodiment of the present disclosure.

[0079] As shown in Figure 3, when the first heavy metal layer is tungsten, the magnetic moment of the first free layer exists in the form of randomly distributed magnetic domains; when the first heavy metal layer is tantalum, the magnetic moment distribution of the first free layer exists in the form of two elongated magnetic domains. The specific distribution of the magnetic moment is determined by the combined effects of the external magnetic field and the first spin current. It is understood that the first heavy metal layer in the embodiments of the present disclosure is not limited to this. For example, materials such as platinum, iridium, and ruthenium can also be used.

[0080] According to an embodiment of the present disclosure, a spin sensor device senses an external magnetic field and generates a first current. Due to the spin Hall effect, when the first current flows through the first heavy metal layer, a transverse first spin current is generated, so that the first spin current can control the magnetic moment in the first free layer to flip, thereby changing the resistance of the first tunnel junction.

[0081] The cross-shaped design of the spin sensor device provides two identical, perpendicular write current paths. Applying current in the positive and negative directions along these different paths produces different first spin current effects. The top electrode port can be used to detect the resistance of the first tunnel junction, thereby reflecting the magnetic moment distribution of the first free layer. By measuring the resistance of the first tunnel junction under four different write currents, magnetic field information in three directions can be extracted.

[0082] According to the embodiments of the present disclosure, the first current flows only through the first heavy metal layer and does not pass through the first barrier layer. Therefore, compared with the method in which the current flows from the top electrode to the bottom electrode, the spin sensor device of the embodiments of the present disclosure has lower resistance and power consumption. It can also avoid the breakdown of the insulating layer caused by spin excitation, further improving the life of the spin sensor device.

[0083] FIG4 schematically shows a structural diagram of a spin logic device according to an embodiment of the present disclosure.

[0084] As shown in Figure 4, the spin logic device 400 includes a second top electrode 401, a second pinned layer 402, a second reference layer 403, a second barrier layer 404, a second free layer 405, a second heavy metal layer 406 and a second bottom electrode 407. The second top electrode 401 includes a second top electrode port, the second bottom electrode 407 includes two second bottom electrode ports, and the second pinned layer 402, the second reference layer 403, the second barrier layer 404 and the second free layer 405 form a second tunnel junction 410 of the spin logic device.

[0085] The size of the second tunnel junction 410 is 10-100 nanometers, the thickness of the second heavy metal layer 406 is 10-50 nanometers, the thickness of the second reference layer 403 is 0.8-1.3 nanometers, and the thickness of the second barrier layer 404 is 1-3 nanometers.

[0086] According to an embodiment of the present disclosure, the second pinned layer can be made of synthetic antiferromagnetic (i.e., SAF) material, the second reference layer can be made of cobalt iron boron (i.e., CoFeB) material, the second barrier layer can be made of magnesium oxide (i.e., MgO) material, and the second free layer can be made of cobalt iron boron (i.e., CoFeB) material.

[0087] According to the embodiments of the present disclosure, the second heavy metal layer can convert the electric current into a spin current, and the interface between the second free layer and the second barrier layer induces a thin second free layer with magnetic anisotropy in the direction perpendicular to the interface. The spin current from the second heavy metal layer enters the second free layer, and the magnetic moment reversal or continuous precession in the second free layer is regulated by the SOT effect. The second free layer, the second barrier layer, the second reference layer and the second pinned layer form a magnetic second tunnel junction MTJ structure, and the resistance of the second tunnel junction can be used to reflect the magnetic moment state of the second free layer. The artificial synthetic antiferromagnetism of the second pinned layer is used to fix the magnetic moment direction of the second reference layer. Common vertically pinned artificial synthetic antiferromagnetism has a multi-layer stack of ferromagnetic metals (such as cobalt Co, nickel Ni, etc.), and the thickness of a single metal layer is generally 0.3-1nm.

[0088] The spin logic device 400 can also be used to receive an electrical signal from a spin memory device using a second bottom electrode port, and when a second current flows into the second heavy metal layer, generate a second spin current to change the magnetic moment state in the second free layer, thereby performing logical operations on the electrical signal to obtain magnetic field information about the external magnetic field, and output the magnetic field information to the spin memory device.

[0089] According to the embodiments of the present disclosure, the junction region diameter of the second tunnel junction of the spin memory device is generally 10-100 nanometers. The nanometer-scale size allows the second free layer to be considered as a single magnetic moment distribution, with only two states: antiparallel and parallel (i.e., "0" and "1"). Because the spin logic device has only two magnetic moment states, the electrical output of the spin logic device exhibits a distinct switching phenomenon and can be used as a switching device. With current as input and the magnetic moment state of the spin logic device as output, various logical operations can be implemented by combining peripheral circuits with switching devices.

[0090] According to the embodiments of the present disclosure, the second current only flows through the second heavy metal layer and does not pass through the second barrier layer. Therefore, compared with the method in which the current flows from the top electrode to the bottom electrode, the spin logic device of the embodiments of the present disclosure has smaller resistance and lower power consumption. It can also avoid the breakdown of the insulating layer caused by spin excitation, further improving the life of the spin logic device.

[0091] FIG5 schematically shows a structural diagram of a spin memory device according to an embodiment of the present disclosure.

[0092] FIG6 schematically shows a circuit diagram of a spin memory device according to an embodiment of the present disclosure.

[0093] As shown in Figures 5 and 6, a spin memory device 500 includes a third top electrode 501, a third pinned layer 502, a third reference layer 503, a third barrier layer 504, a third free layer 505, a third heavy metal layer 506, and a third bottom electrode 507. The third top electrode 501 includes a third top electrode terminal, and the third bottom electrode 507 includes two third bottom electrode terminals. The third pinned layer 502, the third reference layer 503, the third barrier layer 504, and the third free layer 505 form a third tunnel junction 510 of the spin memory device. The array arrangement of the spin memory device can be the same as that of the spin logic device. As shown in Figure 6, RL0-RL3 are the read word lines of the spin memory device, WL0-WL3 are the write word lines of the spin memory device, BL0-BL3 are the bit lines of the spin memory device, SRL0-SRL2 are the read source lines of the spin memory device, and SWL0-SWL2 are the write source lines of the spin memory device. The number of spin memory devices shown in FIG. 6 is for illustration only and is not limiting.

[0094] The size of the third tunnel junction is 10-100 nanometers, the thickness of the third heavy metal layer is 10-50 nanometers, the thickness of the third reference layer is 0.8-1.3 nanometers, and the thickness of the third barrier layer is 1-3 nanometers.

[0095] According to an embodiment of the present disclosure, the third pinned layer can be made of synthetic antiferromagnetic (i.e., SAF) material, the third reference layer can be made of cobalt iron boron (i.e., CoFeB) material, the third barrier layer can be made of magnesium oxide (i.e., MgO) material, and the third free layer can be made of cobalt iron boron (i.e., CoFeB) material.

[0096] According to the embodiments of the present disclosure, the third heavy metal layer can convert the electric current into a spin current, and the interface between the third free layer and the third barrier layer induces a thin third free layer with magnetic anisotropy in the direction perpendicular to the interface. The spin current from the third heavy metal layer enters the third free layer, and the magnetic moment reversal or continuous precession in the third free layer is regulated by the SOT effect. The third free layer, the third barrier layer, the third reference layer and the third pinned layer constitute a magnetic third tunnel junction MTJ structure, and the resistance of the third tunnel junction can reflect the magnetic moment state of the third free layer. The artificial synthetic antiferromagnetism of the third pinned layer is used to fix the magnetic moment direction of the third reference layer. Common vertically pinned artificial synthetic antiferromagnetism has a multi-layer stack of ferromagnetic metals (such as cobalt Co, nickel Ni, etc.), and the thickness of a single metal layer is generally 0.3-1nm.

[0097] The spin memory device can also be configured to receive electrical signals and magnetic field information when a third current flows from a third top electrode port through a third tunnel junction, and to generate a third spin current in the third heavy metal layer when a fourth current flows from one third bottom electrode port to another third bottom electrode port, so as to change the magnetic moment state in the third free layer, thereby outputting electrical signals to a spin logic device and outputting magnetic field information to a spin oscillation device, wherein the current value of the third current is less than the current value of the fourth current.

[0098] According to the embodiments of the present disclosure, the diameter of the junction region of the third tunnel junction of the spin memory device is generally 10-100 nanometers. The nanometer-scale size allows the third free layer to be considered as a single magnetic moment distribution, with only two states: antiparallel and parallel (i.e., "0" and "1"), and can be used as a storage unit. As shown in Figure 5, the three-port structural design enables the spin memory device to have two paths for reading and writing. In the case of a read operation, a small current (for example, the current density can be 10 8 A / m 2 ) flows through the third tunnel junction. The resistance of the third tunnel junction in the two states is different, and the port voltage can represent the storage state. In the case of a write operation, a large current (for example, the current density can be 10 11 A / m 2 ) flows through the third heavy metal layer, generating a spin current that induces the magnetic moment of the third free layer to flip, thereby realizing the switching of the storage state.

[0099] According to the disclosed embodiments, the fourth current flows only through the third heavy metal layer and not through the third barrier layer. Therefore, compared to a method where current flows from the top electrode to the bottom electrode, the spin memory device of the disclosed embodiments has lower resistance and power consumption. It also avoids breakdown of the insulating layer caused by spin excitation, further improving the lifespan of the spin memory device. Furthermore, the separation of the write and read paths of the spin memory device enhances the stability of the spin microsystem.

[0100] FIG7 schematically shows a structural diagram of a spin oscillation device according to an embodiment of the present disclosure.

[0101] As shown in FIG7 , the spin oscillator device 700 includes a fourth barrier layer 701 , a fourth free layer 702 , a fourth heavy metal layer 703 and a fourth bottom electrode 704 . The fourth bottom electrode 704 includes two fourth bottom electrode ports.

[0102] The spin oscillator device 700 is a bridge structure with wide ends and a narrow middle.

[0103] The thickness of the fourth heavy metal layer is 10 to 50 nanometers, the thickness of the fourth reference layer is 0.8 to 1.3 nanometers, the thickness of the fourth barrier layer is 1 to 3 nanometers, and the width of the narrow bridge region of the spin oscillator device is 20 to 200 nanometers.

[0104] According to an embodiment of the present disclosure, the fourth barrier layer may be made of magnesium oxide (ie, MgO), and the fourth free layer may be made of cobalt iron boron (ie, CoFeB).

[0105] According to the embodiments of the present disclosure, the fourth heavy metal layer can convert current into spin current. The interface between the fourth free layer and the fourth barrier layer induces a thin fourth free layer with magnetic anisotropy perpendicular to the interface. The spin current from the fourth heavy metal layer enters the fourth free layer, regulating the magnetic moment reversal or continuous precession in the fourth free layer through the SOT effect.

[0106] The spin oscillation device can also be configured to generate a fourth spin current when a fifth current enters the fourth heavy metal layer from the fourth bottom electrode port, so as to cause the magnetic moment in the fourth free layer to oscillate at high frequency, thereby converting the magnetic field information into a microwave signal.

[0107] According to the embodiments of the present disclosure, when current is passed through the spin oscillator device, the current density in the spin oscillator device reaches its maximum in the narrow bridge region. The current in the fourth heavy metal layer generates a fourth spin current that is injected into the fourth free layer, thereby affecting the magnetic moment of the fourth free layer. When the current density is within a certain range, the fourth spin current is insufficient to induce the magnetic moment of the fourth free layer to complete the flip, but it will cause it to precess at a high frequency. The high-frequency oscillation of the magnetic moment will cause high-frequency changes in the surrounding magnetic field, thereby generating high-frequency electromagnetic waves, realizing the conversion of magnetic field information into microwave signals. The frequency of the microwave signal is often related to the external magnetic field.

[0108] According to the embodiment of the present disclosure, the fifth current only flows through the fourth heavy metal layer and does not pass through the fourth barrier layer. Therefore, compared with the method in which the current flows from the top electrode to the bottom electrode, the spin oscillation device of the embodiment of the present disclosure has smaller resistance and power consumption. It can also avoid the breakdown of the insulating layer caused by spin excitation, further improving the life of the spin oscillation device.

[0109] FIG8 schematically shows a flow chart of a method for preparing a spin microsystem based on spin-orbit torque according to an embodiment of the present disclosure.

[0110] As shown in FIG8 , the method includes operations S810 to S880 .

[0111] In operation S810 , a bottom electrode of a spin microsystem is prepared.

[0112] In operation S820 , a heavy metal layer, a free layer, a barrier layer, a reference layer, and a pinned layer of the spin microsystem are deposited.

[0113] In operation S830 , a first etching is performed, and the etching ends at the bottom electrode to form the shape of the heavy metal layer of the spin sensor device, the spin logic device, the spin memory device, and the spin oscillation device in the spin microsystem.

[0114] In operation S840 , a second etching is performed until the barrier layer is etched to form a pattern structure of the oscillating device and the sensor device.

[0115] In operation S850 , a third etching is performed until the heavy metal layer is etched to form a pattern structure of a memory device and a logic device.

[0116] In operation S860 , a protective layer is prepared.

[0117] In operation S870, a through hole is formed on the surface of the protection layer.

[0118] In operation S880 , a top electrode is prepared.

[0119] According to the embodiments of the present disclosure, a bottom electrode can be prepared on the wafer surface using a damascene process and the surface of the bottom electrode can be kept flat. The electrode material of the bottom electrode is generally gold, copper, etc.

[0120] According to the embodiments of the present disclosure, a multilayer thin film comprising a heavy metal layer, a free layer, a barrier layer, a reference layer, and a pinned layer can be deposited on the surface of a bottom electrode using a magnetron sputtering process. The heavy metal layer is located on the bottom electrode, the free layer is located on the heavy metal layer, the barrier layer is located on the free layer, the reference layer is located on the barrier layer, and the pinned layer is located on the reference layer.

[0121] According to an embodiment of the present disclosure, the first etching is performed on all devices including the spin sensor device, the spin logic device, the spin memory device, and the spin oscillation device, and ends at the bottom electrode to form the shape of the heavy metal layer of each of the spin sensor device, the spin logic device, the spin memory device, and the spin oscillation device.

[0122] According to an embodiment of the present disclosure, the second etching is performed on the spin oscillator device and the spin sensor device region, and the etching ends at the barrier layer to form the pattern structures of the spin oscillator device and the spin sensor device.

[0123] According to an embodiment of the present disclosure, the third etching step is to etch the spin memory device and the spin logic device until the heavy metal layer is reached, thereby forming the graphic structures of the memory device and the logic device, the spin memory device, and the spin logic device.

[0124] According to the embodiments of the present disclosure, a protective layer can be prepared by chemical vapor deposition. The protective layer is prepared to protect the various devices in the spin microsystem. The protective layer material is generally silicon dioxide (ie SiO2), silicon nitride (ie SiN x )wait.

[0125] According to the embodiment of the present disclosure, a through hole can be prepared on the surface of the protective layer by using a reactive ion beam etching process.

[0126] According to the embodiments of the present disclosure, the top electrode can be prepared by using magnetron sputtering and lift-off processes, thereby completing the entire preparation process.

[0127] According to the embodiments of the present disclosure, the basic film layers used in various devices in the spin microsystem are consistent, which makes the preparation processes of these devices similar. The preparation of all devices can be completed through a simple process flow, and multiple spin devices based on the spin-orbit torque (SOT) effect are integrated on the same wafer to form a spin microsystem, thereby realizing multiple functions including data storage, logic calculation, microwave emission and magnetic field sensing, and reducing the overall size of the spin microsystem, realizing three-dimensional heterogeneous and heterogeneous integration of different materials and devices.

[0128] FIG9 schematically shows a structural diagram of a spin microsystem based on spin-orbit torque according to an embodiment of the present disclosure.

[0129] As shown in FIG9 , a spin microsystem 900 based on spin-orbit torque may include a spin sensor device 910, multiple spin logic devices 920, multiple spin memory devices 930, and two spin oscillator devices 940. It should be understood that the number of spin sensor devices 910, spin logic devices 920, spin memory devices 930, and spin oscillator devices 940 shown in FIG9 is merely illustrative and may be adjusted to other numbers based on actual needs.

[0130] FIG10 schematically shows a data flow diagram of a spin microsystem based on spin-orbit torque according to an embodiment of the present disclosure.

[0131] As shown in Figure 10, the spin sensor device can sense an external magnetic field or microwave signal, converting it into a series of electrical signals that are then transmitted to the spin memory device. The spin memory device then transmits the stored electrical signals to the spin logic device for computation and stores the resulting magnetic field information in the spin memory device. This magnetic field information is then transmitted to the spin oscillator device, which outputs it as a microwave signal. Throughout this process, an external control device controls the operation of each functional device according to the instructions transmitted by the memory device. The entire spin microsystem, except for the control device, consists of spintronic devices fabricated on the same wafer.

[0132] FIG11 schematically shows a block diagram of a chip according to an embodiment of the present disclosure.

[0133] As shown in FIG. 11 , a chip 1100 includes a spin microsystem 1110 based on spin-orbit torque.

[0134] The flowcharts and block diagrams in the accompanying drawings illustrate the possible implementation architecture, functions and operations of the systems, methods and computer program products according to various embodiments of the present disclosure. In this regard, each box in the flowchart or block diagram can represent a module, program segment, or a part of code, and the above-mentioned module, program segment, or a part of code contains one or more executable instructions for implementing the specified logical function. It should also be noted that in some alternative implementations, the functions marked in the box can also occur in an order different from that marked in the accompanying drawings. For example, two boxes represented in succession can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, depending on the functions involved. It should also be noted that each box in the block diagram or flowchart, and the combination of boxes in the block diagram or flowchart, can be implemented with a dedicated hardware-based system that performs the specified function or operation, or can be implemented with a combination of dedicated hardware and computer instructions.

[0135] Those skilled in the art will appreciate that the features described in the various embodiments and / or claims of this disclosure may be combined and / or coupled in various ways, even if such combinations and / or couplings are not explicitly described in this disclosure. In particular, the features described in the various embodiments and / or claims of this disclosure may be combined and / or coupled in various ways without departing from the spirit and teachings of this disclosure. All such combinations and / or couplings are intended to fall within the scope of this disclosure.

[0136] The embodiments of the present disclosure are described above. However, these embodiments are for illustrative purposes only and are not intended to limit the scope of the present disclosure. Although each embodiment has been described separately above, this does not mean that the measures in each embodiment cannot be used in combination to advantage. The scope of the present disclosure is defined by the appended claims and their equivalents. Without departing from the scope of the present disclosure, those skilled in the art may make various substitutions and modifications, which should all fall within the scope of the present disclosure.

Claims

1. A spin microsystem based on spin-orbit torque, comprising: a spin sensor device configured to sense an external magnetic field and generate a first spin current in the first heavy metal layer to convert the external magnetic field into an electrical signal and output it to the spin memory device; a spin logic device configured to generate a second spin current in the second heavy metal layer to perform a logic operation on the electrical signal to obtain magnetic field information about the external magnetic field, and output the magnetic field information to the spin memory device; a spin memory device configured to receive the electrical signal and the magnetic field information, and generate a third spin current in a third heavy metal layer to output the electrical signal to the spin logic device and output the magnetic field information to a spin oscillation device; The spin oscillation device is configured to receive the magnetic field information and generate a fourth spin current in a fourth heavy metal layer to convert the magnetic field information into a microwave signal.

2. The spin microsystem according to claim 1, wherein The spin sensor device includes a first top electrode, a first pinned layer, a first reference layer, a first barrier layer, a first free layer, the first heavy metal layer, and a first bottom electrode, wherein the first top electrode includes a first top electrode port, and the first bottom electrode includes four second bottom electrode ports; wherein the first pinned layer, the first reference layer, the first barrier layer and the first free layer form a first tunnel junction of the spin sensor device; The spin sensor device is further configured to utilize the first bottom electrode port to flow into a first current induced by the external magnetic field; when the first heavy metal layer receives the first current, the first spin current is generated to change the magnetic moment state in the first free layer; the first top electrode port is utilized to detect the resistance of the first tunnel junction of the spin sensor device; and the electrical signal is generated according to the resistance of the first tunnel junction and output to the spin memory device.

3. The spin microsystem according to claim 2, wherein: The spin sensor device has a cross-shaped structure, the size of the first tunnel junction is 10 to 50 microns, the thickness of the first heavy metal layer is 10 to 50 nanometers, the thickness of the first reference layer is 0.8 to 1.3 nanometers, and the thickness of the first barrier layer is 1 to 3 nanometers.

4. The spin microsystem according to claim 1, wherein The spin logic device includes a second top electrode, a second pinned layer, a second reference layer, a second barrier layer, a second free layer, the second heavy metal layer, and a second bottom electrode, wherein the second top electrode includes a second top electrode port, the second bottom electrode includes two second bottom electrode ports, and the second pinned layer, the second reference layer, the second barrier layer, and the second free layer form a second tunnel junction of the spin logic device; The spin logic device is further configured to receive an electrical signal from the spin memory device using the second bottom electrode port, and generate a second spin current when a second current flows into the second heavy metal layer to change the magnetic moment state in the second free layer, thereby performing a logical operation on the electrical signal to obtain magnetic field information about the external magnetic field. The magnetic field information is output to the spin memory device.

5. The spin microsystem according to claim 4, wherein The size of the second tunnel junction is 10-100 nanometers, the thickness of the second heavy metal layer is 10-50 nanometers, the thickness of the second reference layer is 0.8-1.3 nanometers, and the thickness of the second barrier layer is 1-3 nanometers.

6. The spin microsystem according to any one of claims 1 to 5, wherein: The spin memory device includes a third top electrode, a third pinned layer, a third reference layer, a third barrier layer, a third free layer, the third heavy metal layer, and a third bottom electrode, wherein the third top electrode includes a third top electrode port, the third bottom electrode includes two third bottom electrode ports, and the third pinned layer, the third reference layer, the third barrier layer, and the third free layer form a third tunnel junction of the spin memory device; The spin memory device is further configured to receive the electrical signal and the magnetic field information when a third current flows from the third top electrode port through the third tunnel junction, and to generate the third spin current in the third heavy metal layer when a fourth current flows from one third bottom electrode port to another third bottom electrode port, so as to change the magnetic moment state in the third free layer, thereby outputting the electrical signal to the spin logic device and outputting the magnetic field information to the spin oscillation device, wherein the current value of the third current is smaller than the current value of the fourth current.

7. The spin microsystem according to claim 6, wherein: The size of the third tunnel junction is 10-100 nanometers, the thickness of the third heavy metal layer is 10-50 nanometers, the thickness of the third reference layer is 0.8-1.3 nanometers, and the thickness of the third barrier layer is 1-3 nanometers.

8. The spin microsystem according to any one of claims 1 to 5, wherein: The spin oscillator device includes a fourth barrier layer, a fourth free layer, the fourth heavy metal layer and a fourth bottom electrode, wherein the fourth bottom electrode includes two fourth bottom electrode ports; The spin oscillator device is further configured to generate the fourth spin current when the fifth current enters the fourth heavy metal layer from the fourth bottom electrode port, so as to cause the magnetic moment in the fourth free layer to oscillate at high frequency, thereby converting the magnetic field information into a microwave signal.

9. The spin microsystem according to claim 8, wherein The spin oscillator device is a bridge structure with wide ends and narrow middle; The thickness of the fourth heavy metal layer is 10 to 50 nanometers, the thickness of the fourth reference layer is 0.8 to 1.3 nanometers, the thickness of the fourth barrier layer is 1 to 3 nanometers, and the width of the narrow bridge region of the spin oscillator device is 20 to 200 nanometers.

10. The spin microsystem according to any one of claims 1 to 5, wherein The spin microsystem further includes a control device configured to generate a control instruction so as to enable the spin sensor device, the spin logic device, the spin memory device, and the spin oscillation device to operate under the control of the control instruction.

11. A method for preparing a spin microsystem based on spin-orbit torque, comprising: Preparation of the bottom electrode of the spin microsystem; depositing a heavy metal layer, a free layer, a barrier layer, a reference layer, and a pinned layer of the spin microsystem; Performing a first etching, and finishing etching to the bottom electrode, so as to form the shape of the heavy metal layer of the spin sensor device, the spin logic device, the spin memory device and the spin oscillation device in the spin microsystem; Performing a second etching process until the barrier layer is finished, thereby forming a pattern structure of the oscillating device and the sensor device; Performing a third etching process until the heavy metal layer is completely etched, thereby forming a graphic structure of the memory device and the logic device; preparing a protective layer; preparing through holes on the surface of the protective layer; Prepare the top electrode.

12. A chip comprising: The spin microsystem according to any one of claims 1 to 10.

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