Micro-display chip, micro-display panel and forming method therefor, and near-eye display device

Abstract

A micro-display chip, a micro-display panel and a forming method therefor, and a near-eye display device, relating to the technical field of micro-display. The method for forming a micro-display panel comprises: providing a micro-display chip, wherein the micro-display chip comprises a light-emitting region and a non-light-emitting region surrounding the light-emitting region; forming a metal layer in the non-light-emitting region; forming a light absorption layer on the metal layer, wherein a plurality of coarse protrusions are arranged on the surface of the light absorption layer; and packaging the micro-display chip in a surrounding mode by using an outer frame, wherein the light-emitting region and the light absorption layer of the micro-display chip are exposed out of the outer frame. The light absorption layer is formed on the metal layer, the surface of the light absorption layer is provided with the uneven surfaces of the plurality of coarse protrusions, the surface area of the uneven surface of the light absorption layer is increased, and light emitted from the light-emitting region is reflected by the outside to reach the surface of the light absorption layer to generate diffuse reflection, thereby effectively reducing the re-reflection of full-band light, and improving the picture display quality.

Description

Microdisplay chip, microdisplay panel and forming method thereof, near-eye display device

[0001] This application claims priority to the Chinese patent application filed with the China Patent Office on February 21, 2024, with application number 2024101956251 and invention name “Microdisplay chip, microdisplay panel and method for forming same, near-eye display device”, the entire contents of which are incorporated by reference into this application. Technical Field

[0002] The present invention relates to the field of microdisplay technology, and in particular to a microdisplay chip, a microdisplay panel, a method for forming the same, and a near-eye display device. Background Art

[0003] Inorganic micro-pixel light-emitting diodes, also known as micro-LEDs (Micro LEDs or μ-LEDs), have become increasingly important since they are being used in a variety of applications, including self-luminous micro-displays, visible light communications, and optogenetics. Compared to traditional LEDs, Micro LEDs offer improved strain relaxation, better light extraction efficiency, uniform current spreading, and higher output performance. Micro LEDs also offer improved thermal effects, faster response times, a wider operating temperature range, higher resolution, a wider color gamut, higher contrast, lower power consumption, and higher current density.

[0004] However, the Micro LED micro display panels in the existing technology still have many problems in the application process.

[0005] Summary of the Invention

[0006] The technical problem solved by the present invention is to provide a micro display chip, a micro display panel and a method for forming the same, and a near-eye display device to improve the display quality of the picture.

[0007] To solve the above problems, the technical solution of the present invention provides a micro display chip, comprising: a light-emitting area; a non-light-emitting area located around the light-emitting area; a metal layer located in the non-light-emitting area; and a light-absorbing layer located on the metal layer, wherein the surface of the light-absorbing layer has a plurality of roughened protrusions.

[0008] Optionally, the morphologies of the roughened protrusions are different.

[0009] Optionally, the morphologies of the plurality of roughened protrusions are the same.

[0010] Optionally, it further includes: a driving backplane: a light-emitting array arranged on the driving backplane, and the light-emitting array is located in the light-emitting area.

[0011] Optionally, the metal layer is electrically connected to the light emitting array, and the metal layer serves as an electrode electrically connected to the light emitting array.

[0012] Optionally, it further includes: a top conductive layer located on the top of the light emitting array, the top conductive layer is electrically connected to the top of the light emitting array, and the top conductive layer is electrically connected to the metal layer.

[0013] Optionally, the light emitting array includes: a plurality of light emitting mesas arranged in an array, the light emitting mesas are electrically connected to the driving backplane, and the driving backplane is used to control the lighting and extinguishing of the light emitting mesas.

[0014] Optionally, the method further comprises: a current spreading structure disposed between adjacent light-emitting mesas, wherein the current spreading structure is electrically connected to the top conductive layer.

[0015] Optionally, it further includes: a plurality of micro lenses, the number of the micro lenses is the same as the number of the light-emitting mesas, and each light-emitting mesas is provided with one micro lens on a side away from the driving backplane.

[0016] Optionally, the light absorption layer is provided in the gap between adjacent micro lenses, and the surface of the light absorption layer in the gap between adjacent micro lenses has a plurality of roughened protrusions.

[0017] Optionally, positions of the roughened protrusions between adjacent microlenses correspond to positions of the current spreading structures.

[0018] Optionally, the material of the light absorbing layer includes: photoresist, gray glue, inorganic anti-reflective material or black inorganic material.

[0019] Optionally, the roughened convex portion has a conical structure; wherein the bottom width of the roughened convex portion is 50 nanometers to 200 nanometers, and the height of the roughened convex portion is 50 nanometers to 300 nanometers.

[0020] Optionally, the metal layer and the light absorbing layer having a plurality of roughened protrusions on the surface are arranged around the light emitting area.

[0021] Correspondingly, the technical solution of the present invention further provides a micro display panel, comprising: the micro display chip described in any one of the above technical solutions; an outer frame surrounding and encapsulating the micro display chip, the outer frame exposing the light emitting area and the light absorbing layer of the micro display chip.

[0022] Optionally, the top height of the outer frame is higher than the height of the light absorbing layer.

[0023] Optionally, the top height of the outer frame is flush with the height of the light absorbing layer.

[0024] Optionally, the top height of the outer frame is lower than the height of the light absorbing layer.

[0025] Optionally, it also includes: a connecting wire, including a first connecting end and a second connecting end relative to each other, the first connecting end of the connecting wire is electrically connected to the micro display chip; a connector, the second connecting end of the connecting wire is electrically connected to the connector, and the connector is connected to a matching device in the outside world.

[0026] Correspondingly, the technical solution of the present invention also provides a method for forming a micro display panel, comprising: providing a micro display chip, the micro display chip including a light-emitting area and a non-light-emitting area surrounding the light-emitting area; forming a metal layer in the non-light-emitting area; forming a light-absorbing layer on the metal layer, the surface of the light-absorbing layer having a plurality of roughened protrusions; and surrounding-packaging the micro display chip with an outer frame, the outer frame exposing the light-emitting area and the light-absorbing layer of the micro display chip.

[0027] Optionally, the method for forming the light-absorbing layer on the metal layer includes: forming a light-absorbing material layer on the metal layer by at least one coating and exposure and development treatment; roughening the surface of the light-absorbing material layer to form the light-absorbing layer, so that the surface of the light-absorbing layer has a plurality of roughened protrusions; wherein the coating and exposure and development method includes: forming a light-absorbing material film on the metal layer and the light-emitting area; exposing and developing the light-absorbing material film based on a mask to remove the light-absorbing material film formed on the light-emitting area.

[0028] Optionally, the method of roughening the surface of the light-absorbing material layer includes: roughening the surface of the light-absorbing material layer using an ion etching process so that the surface of the light-absorbing layer has a plurality of roughened protrusions, and the morphologies of the roughened protrusions are different.

[0029] Optionally, the etching gas in the ion etching process includes one or more of O2, CF4 and CL2.

[0030] Optionally, the method of roughening the surface of the light-absorbing material layer includes: roughening the surface of the light-absorbing material layer by a mold embossing process, so that the surface of the light-absorbing layer has a plurality of roughened protrusions, and the morphologies of the plurality of roughened protrusions are the same.

[0031] Optionally, after forming the light absorbing layer and before adopting the outer frame packaging, the method further includes: baking the light absorbing layer.

[0032] Optionally, the baking temperature of the baking treatment is 120 degrees Celsius to 150 degrees Celsius, and the baking time is 50 minutes to 100 minutes.

[0033] Correspondingly, the technical solution of the present invention further provides a near-eye display device, comprising: a micro display chip as described in any of the above technical solutions.

[0034] Compared with the prior art, the technical solution of the present invention has the following advantages:

[0035] In the micro-display chip of the technical solution of the present invention, a light-absorbing layer is located on the metal layer, and the surface of the light-absorbing layer has a non-flat surface with several roughened protrusions. The surface area of ​​the non-flat light-absorbing layer is increased, and the light emitted from the light-emitting area is reflected from the outside and then reaches the surface of the light-absorbing layer to produce diffuse reflection, thereby effectively reducing the re-reflection of light in the entire band and improving the picture display quality.

[0036] Furthermore, the roughened convex portions have different shapes, that is, the roughened convex portions have irregular sizes. The irregularly sized roughened convex portions can effectively enhance the diffuse reflection effect, further reduce the re-reflection of light in the full wavelength band, and improve the image display quality.

[0037] In the micro-display panel of the technical solution of the present invention, a light-absorbing layer is located on the metal layer, and the surface of the light-absorbing layer has a non-flat surface with several roughened protrusions. The surface area of ​​the non-flat light-absorbing layer is increased, and the light emitted in the light-emitting area is reflected by the outside world and then reaches the surface of the light-absorbing layer to produce diffuse reflection, thereby effectively reducing the re-reflection of light in the entire band and improving the picture display quality.

[0038] In the method for forming a micro-display panel of the technical solution of the present invention, a light-absorbing layer is formed on a metal layer, and the surface of the light-absorbing layer has a non-flat surface with several roughened protrusions. The surface area of ​​the non-flat light-absorbing layer is increased, and the light emitted in the light-emitting area is reflected from the outside and reaches the surface of the light-absorbing layer to generate diffuse reflection, thereby effectively reducing the re-reflection of light in the full band and improving the picture display quality.

[0039] Furthermore, the method for roughening the surface of the light-absorbing material layer includes: roughening the surface of the light-absorbing material layer using an ion etching process so that the surface of the light-absorbing layer has a plurality of roughened protrusions, and the morphologies of the plurality of roughened protrusions are different. Since the ion etching process does not generate external force on the micro-display chip, it will not cause fracturing or scratching of the micro-display chip during the roughening process, and there is no need for fine alignment with the light-absorbing layer, which effectively reduces the process difficulty of the roughening process. In addition, the morphologies of the plurality of roughened protrusions formed by the roughening process using the ion etching process are different, that is, the plurality of roughened protrusions are of irregular sizes, which can effectively enhance the effect of diffuse reflection, further reduce the re-reflection of light in the full band, and improve the display quality of the picture. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] FIG1 is a schematic structural diagram of a Micro LED micro display panel;

[0041] FIG2 is a diagram showing the light propagation path of the Micro LED micro display panel of the embodiment shown in FIG1 when applied to AR glasses;

[0042] 3 to 8 are schematic structural diagrams of various steps of a method for forming a micro display panel according to an embodiment of the present invention;

[0043] 9 is a schematic structural diagram of a roughening step in a method for forming a micro display panel according to another embodiment of the present invention;

[0044] FIG10 is a schematic structural diagram of a microlens and a light absorbing layer in a microdisplay panel according to an embodiment of the present invention;

[0045] 11 is a schematic structural diagram of a microlens and a light absorbing layer in a microdisplay panel according to another embodiment of the present invention;

[0046] FIG12 is a cross-sectional schematic diagram of an embodiment of the micro display panel shown in FIG8 along line AA;

[0047] FIG13 is a cross-sectional view of another embodiment of the micro display panel shown in FIG8 along line AA;

[0048] FIG14 is a cross-sectional schematic diagram of another embodiment of the micro display panel shown in FIG8 along line AA;

[0049] FIG15 is a cross-sectional schematic diagram of another embodiment of the micro display panel shown in FIG8 along line AA;

[0050] FIG16 is a schematic cross-sectional view of another embodiment of the micro display panel of the embodiment shown in FIG8 along line AA. DETAILED DESCRIPTION

[0051] As described in the background art, the existing Micro LED display panels still have many problems in their application. The following will be described in detail with reference to the accompanying drawings.

[0052] FIG1 is a schematic diagram of the structure of a Micro LED micro display panel; FIG2 is a diagram of the light propagation path of the Micro LED micro display panel of the embodiment shown in FIG1 applied to AR glasses.

[0053] Referring to Figure 1 , a Micro LED microdisplay panel 100P includes a microdisplay chip 10P, a frame 20P, connecting wires 30P, and a connector 40P. The frame 20P surrounds the microdisplay chip 10P, one end of the connecting wire 30P connects to the microdisplay chip 10P, and the other end of the connecting wire 30P connects to the connector 40P. The connector 40P is suitable for connecting to external devices. The microdisplay chip 10P has a light-emitting region I and a non-light-emitting region II surrounding the light-emitting region I. The non-light-emitting region II has a metal layer 11P.

[0054] Referring to FIG. 2 , light emitted from the Micro LED micro display panel 100P passes through the optical lens 200P and reaches the light guide lens 300P, and can be displayed in the developing area of ​​the light guide lens 300P.

[0055] Please continue to refer to Figure 2. In existing AR glasses, when the light emitted by the Micro LED micro display panel 100P reaches the light waveguide lens 300P, some of the light will be reflected back to the non-luminous area II on the Micro LED micro display panel 100P. After being reflected by the metal layer of the non-luminous area II, it enters the light waveguide lens 300P again and forms two images at different positions of the light waveguide lens 300P. The image formed after being reflected by the non-luminous area II is also called "ghosting". The existence of "ghosting" will significantly reduce the display quality.

[0056] On this basis, the present invention provides a microdisplay chip, a microdisplay panel, a method for forming the same, and a near-eye display device. By forming a light-absorbing layer on a metal layer, and the surface of the light-absorbing layer has an uneven surface with several roughened protrusions, the surface area of ​​the uneven light-absorbing layer is increased, and the light emitted from the light-emitting area is reflected from the outside world and then reaches the surface of the light-absorbing layer to generate diffuse reflection, thereby effectively reducing the re-reflection of light in the entire band and improving the display quality of the picture.

[0057] To make the above-mentioned objects, features, and advantages of the present invention more clearly understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts shall fall within the scope of protection of the present invention.

[0058] In the description of the present invention, it should be understood that the terms "upper," "lower," "top," and "bottom" and the like, indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings and are intended solely to facilitate description and simplify the present invention. They are not intended to indicate or imply that the positions or elements referred to must have a specific orientation, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limitations of the present invention. Furthermore, the terms "first" and "second" are used solely to distinguish an entity or operation from another entity or operation and do not require or imply any actual relationship, order, or relative importance between these entities or operations.

[0059] Figures 3 to 8 are schematic structural diagrams of each step of a method for forming a microdisplay panel according to an embodiment of the present invention; Figure 10 is a schematic structural diagram of a microlens and a light-absorbing layer in a microdisplay panel according to an embodiment of the present invention; Figure 11 is a schematic structural diagram of a microlens and a light-absorbing layer in a microdisplay panel according to another embodiment of the present invention; Figure 12 is a schematic cross-sectional diagram of the microdisplay panel according to the embodiment of Figure 8 along line AA according to one embodiment; Figure 13 is a schematic cross-sectional diagram of the microdisplay panel according to the embodiment of Figure 8 along line AA according to another embodiment; Figure 14 is a schematic cross-sectional diagram of the microdisplay panel according to the embodiment of Figure 8 along line AA according to another embodiment; Figure 15 is a schematic cross-sectional diagram of the microdisplay panel according to the embodiment of Figure 8 along line AA according to another embodiment; and Figure 16 is a schematic cross-sectional diagram of the microdisplay panel according to the embodiment of Figure 8 along line AA according to another embodiment.

[0060] Please refer to FIG3 and FIG4 . FIG4 is a schematic cross-sectional view along line AA in FIG3 , which shows a micro display chip 10 including a light emitting region I and a non-light emitting region II surrounding the light emitting region I. FIG4 is a schematic cross-sectional view along line AA in FIG3 .

[0061] In some embodiments, the micro display chip 10 includes a driving backplane 11 and a light emitting array 12 disposed on the driving backplane 11 ; the light emitting array 12 is located in the light emitting area I. The driving backplane 11 may be an IC board or a TFT substrate.

[0062] In some embodiments, the light emitting array 12 includes: a plurality of light emitting mesas 121 arranged in an array. The light emitting mesas 121 are electrically connected to the driving backplane 11 . The driving backplane 11 is used to control the lighting and extinguishing of the light emitting mesas 121 .

[0063] In some embodiments, the micro display chip 10 further includes a current spreading structure 15 disposed adjacent to the light-emitting mesas 121 to achieve a current spreading effect.

[0064] In some embodiments, the micro display chip 10 further includes: a plurality of micro lenses 16 . The number of the micro lenses 16 is the same as the number of the light emitting mesas 121 , and each light emitting mesas 121 is provided with a micro lens 16 on a side away from the driving backplane 11 .

[0065] Please refer to FIG. 5 , which is viewed in the same direction as FIG. 4 , and a metal layer 13 is formed in the non-light-emitting region II.

[0066] In some embodiments, the metal layer 13 is electrically connected to the light emitting array 12 , and the metal layer 13 serves as an electrode electrically connected to the light emitting array 12 .

[0067] In some embodiments, the light-emitting mesa 121 includes an N-type semiconductor layer, a P-type semiconductor layer, and a light-emitting layer (not shown) located therebetween. The N-type semiconductor layer is close to the driving backplate 11 and is electrically connected to the driving backplate 11 .

[0068] In some embodiments, the microdisplay chip 10 further includes a top conductive layer 17 located on top of the light-emitting array 12. The top conductive layer 17 is electrically connected to the top of the light-emitting array 12, and the top conductive layer 16 is electrically connected to the metal layer 13. Specifically, the top conductive layer is electrically connected to the P-type semiconductor layer, and the top conductive layers of all light-emitting mesas 121 are electrically connected to each other. The top conductive layer is also electrically connected to the metal layer 13 and the current spreading structure 15.

[0069] In some embodiments, the top conductive layer 17 may also be electrically connected to the N-type semiconductor layer.

[0070] After forming the metal layer 13, the process further includes forming a light absorbing layer 14 on the metal layer 13. The surface of the light absorbing layer 14 has a plurality of roughened protrusions. The specific formation process of the light absorbing layer 14 is shown in FIG6 and FIG7.

[0071] In some embodiments, the metal layer 13 and the light absorbing layer 14 having a plurality of roughened protrusions on the surface are arranged around the light emitting area I.

[0072] Please refer to Figure 6. At least one coating and exposure and development process is used to form a light-absorbing material layer 141 on the metal layer 13. The coating and exposure and development process method includes: forming a light-absorbing material film (not shown) on the metal layer 13 and the light-emitting area I; exposing and developing the light-absorbing material film based on a mask to remove the light-absorbing material film formed on the light-emitting area I.

[0073] In some embodiments, during the formation of the light-absorbing layer 14, multiple coating and exposure and development steps are performed to increase the thickness of the light-absorbing layer 14. For example, when the thickness of the deposited light-absorbing material film reaches approximately 8,000 angstroms, the light-absorbing material film is exposed and developed to remove the light-absorbing material film formed on the light-emitting area I; the aforementioned coating and exposure and development steps are repeated until the thickness of the light-absorbing layer 14 reaches approximately 24,000 angstroms.

[0074] In some embodiments, the light absorbing material film may be made of photoresist, gray resist, inorganic anti-reflective material (eg, ZnO-SiO 2 ), or black inorganic material (eg, carbon nanotubes, etc.).

[0075] 7 , the surface of the light absorbing material layer 141 is roughened to form the light absorbing layer 14 , so that the surface of the light absorbing layer 14 has a plurality of roughened protrusions.

[0076] The light absorbing layer 14 is located on the metal layer 13, and the surface of the light absorbing layer 14 has a non-flat surface with several roughened protrusions. The surface area of ​​the non-flat light absorbing layer 14 is increased, and the light emitted from the light emitting area I is reflected by the outside world and then reaches the surface of the light absorbing layer 14 to produce diffuse reflection, thereby effectively reducing the re-reflection of the full-band light and improving the picture display quality.

[0077] In some embodiments, the method of roughening the surface of the light absorbing material layer 141 includes: roughening the surface of the light absorbing material layer 141 using an ion etching process so that the surface of the light absorbing layer 141 has a plurality of roughened protrusions, and the morphologies of the roughened protrusions are different.

[0078] In some embodiments, the etching gas in the ion etching process includes one or more of O2, CF4, and Cl2.

[0079] Because the ion etching process does not exert external forces on the microdisplay chip 10, the roughening process does not cause any cracking or scratching of the microdisplay chip 10. Furthermore, precise alignment with the light-absorbing layer 14 is not required, effectively reducing the complexity of the roughening process. Furthermore, the ion etching process produces a variety of roughened protrusions with different morphologies, i.e., irregular sizes. This effectively enhances diffuse reflection, further reducing re-reflection of light across the entire wavelength range, and improving display quality.

[0080] It should be noted that the ion etching process used is anisotropic, so during the roughening process, only the top surface of the light absorbing material layer 141 is etched to form a number of roughened protrusions.

[0081] In some embodiments, since the material of the light-absorbing material film is photoresist, gray glue, inorganic anti-reflection material (such as ZnO-SiO2) or black inorganic material (such as carbon nanotubes, etc.), the material of the corresponding light-absorbing layer is also photoresist, gray glue, inorganic anti-reflection material (such as ZnO-SiO2) or black inorganic material (such as carbon nanotubes, etc.).

[0082] Continuing with FIG. 7 , in some embodiments, after forming the light absorbing layer 14, the process further includes baking the light absorbing layer 14 at a temperature of 120°C to 150°C for a time of 50 to 100 minutes. In one specific embodiment, the baking temperature is 135°C for 60 minutes.

[0083] In some embodiments, the formed roughened protrusions have a conical structure; wherein the bottom width of the roughened protrusions is 50 nanometers to 200 nanometers, and the height of the roughened protrusions is 50 nanometers to 300 nanometers.

[0084] Please refer to FIG. 8 , which is viewed in the same direction as FIG. 3 . The micro display chip 10 is encapsulated by an outer frame 20 , which exposes the light emitting region I and the light absorbing layer 14 of the micro display chip 10 .

[0085] 10 and 11 , in some embodiments, a light absorption layer 14 is disposed in the gaps between adjacent microlenses 16 , and a surface of the light absorption layer 14 in the gaps between adjacent microlenses 16 has a plurality of roughened protrusions.

[0086] Continuing to refer to FIG. 10 , adjacent micro lenses 16 are arranged in contact with each other, and the light absorbing layer 14 is located above the connection between the two micro lenses 16 .

[0087] 11 , there is a certain gap between adjacent microlenses 16 , part of the light absorption layer 14 is located inside the gap between two adjacent microlenses 16 , and part of the light absorption layer 14 is located above the connection between two adjacent microlenses 16 .

[0088] In some embodiments, positions of the roughened protrusions between adjacent microlenses 16 are arranged corresponding to the current spreading structures 15 .

[0089] Referring to FIG. 12 , in some embodiments, the bottom of the outer frame 20 is flush with the bottom of the driving backplane 11 , and the top of the outer frame 20 is higher than the top of the light absorbing layer 14 .

[0090] Referring to FIG. 13 , in some embodiments, the top of the outer frame 20 is flush with the top of the light absorbing layer 14 .

[0091] Referring to FIG. 14 , in some embodiments, the top height of the outer frame 20 is lower than the top height of the outer frame 20 .

[0092] Referring to FIG. 15 , in some embodiments, the top surface of the outer frame 20 is an inclined surface, and the height of the top surface of the outer frame 20 close to the light absorbing layer 14 is higher than the height of the top surface away from the light absorbing layer 14 .

[0093] Please refer to FIG. 16 . In some embodiments, the bottom of the driving backplane 11 is also wrapped with an outer frame 20 .

[0094] In some embodiments, the present invention further includes: providing a connecting wire 30, the connecting wire 30 including a first connecting end and a second connecting end relative to each other; electrically connecting the first connecting end of the connecting wire 30 to the micro display chip 10; providing a connector 40; electrically connecting the second connecting end of the connecting wire 30 to the connector 40, and connecting the connector 40 to a matching device in the outside world.

[0095] In some embodiments, the micro display panel is a Micro LED micro display panel.

[0096] The above-mentioned micro display panel has a very small volume, and the length and width dimensions are between 500μm and 50,000μm. The area of ​​the light-emitting region of the above-mentioned micro display panel is very small, such as 1mm×1mm, 2.64mm×2.02mm, 3mm×5mm, etc. The light-emitting region of the above-mentioned micro display panel includes a plurality of micro LED pixels arranged in an array, and the specific pixel arrangement can be one of 320×240, 640×480, 1600×1200, 1920×1080, and 2560×1440. The size of a single micro LED pixel is between 100nm and 100 microns. In some embodiments, the size of a single micro LED pixel is between 150nm and 15 microns. In some embodiments, the size of a single micro LED pixel can also be less than 10 microns.

[0097] A driver backplane is provided on the backside of the micro-LED pixel array. The driver backplane is electrically connected to the micro-LEDs in the micro-LED pixel array. The driver backplane can obtain signals such as image data from the outside world and can control the corresponding micro-LEDs to emit light or not. The driver backplane is a TFT (Thin Film Transistor) board or an IC (Integrated Circuit) board. For example, the driver backplane of the above-mentioned micro-display panel integrates a frame buffer, a column driver circuit, and a row driver circuit. The frame buffer includes a first pixel storage area, and the micro-LED pixel array includes a second pixel storage area. A complete frame of pixel grayscale data from the outside world can first enter the first pixel storage area of ​​the frame buffer. The column driver circuit can load the pixel grayscale data in the first pixel storage area of ​​the frame buffer into the second pixel storage area of ​​the micro-LED pixel array. The row driver circuit can scan the pixel grayscale data in the second pixel storage area and generate a pulse modulation signal to achieve the purpose of displaying different grayscales. When driving multiple micro-LED pixels in the micro-LED pixel array, either a single pixel can be driven independently or multiple pixel units can be driven independently. The specific driving method should not constitute a limitation of this application.

[0098] FIG. 9 is a schematic structural diagram of a roughening step in a method for forming a micro display panel according to another embodiment of the present invention.

[0099] This embodiment is based on the above embodiment ( FIG. 6 ) and continues to illustrate the method for forming a micro display panel. The rest of the method is the same as the above embodiment, with the difference being that the roughening process uses a mold embossing process. For details, please refer to FIG. 9 .

[0100] 9 , the surface of the light absorbing material layer 141 is roughened by a mold imprinting process, so that the surface of the light absorbing layer 14 has a plurality of roughened protrusions, and the morphologies of the roughened protrusions are the same.

[0101] It should be noted that the morphologies of the plurality of roughened convex portions are the same, that is, the plurality of roughened convex portions are of regular sizes.

[0102] In some embodiments, the mold embossing process forms a plurality of roughened protrusions on the surface of the light absorbing layer 14 by embossing the mold 200. It should be noted that during the embossing process, the mold 200 and the light absorbing material layer 141 must be precisely aligned to prevent the mold from cracking or scratching the microdisplay chip 10.

[0103] It should be noted that when the roughening treatment is performed by a mold imprinting process, it is only necessary to use the mold to imprint the top surface of the light absorbing material layer 141 to form a plurality of roughened protrusions.

[0104] Correspondingly, an embodiment of the present invention further provides a micro display panel, please continue to refer to Figures 7 to 9, including: a micro display chip 10, the micro display chip 10 includes a light-emitting area I, and a non-light-emitting area II surrounding the light-emitting area I; a metal layer 13 located in the non-light-emitting area II; a light-absorbing layer 14 located on the metal layer 13, the surface of the light-absorbing layer 14 having a plurality of roughened protrusions; an outer frame 20 surrounding and encapsulating the micro display chip 10, the outer frame 20 exposing the light-emitting area I and the light-absorbing layer 14 of the micro display chip 10.

[0105] The light absorbing layer 14 is located on the metal layer 13, and the surface of the light absorbing layer 14 has a non-flat surface with several roughened protrusions. The surface area of ​​the non-flat light absorbing layer 14 is increased, and the light emitted from the light emitting area I is reflected from the outside and then reaches the surface of the light absorbing layer 14 to produce diffuse reflection, thereby effectively reducing the re-reflection of the full-band light and improving the picture display quality.

[0106] Continuing with FIG7 , in some embodiments, the roughened convex portions have different morphologies, i.e., the roughened convex portions are irregularly sized. The irregularly sized roughened convex portions can effectively enhance the diffuse reflection effect, further reducing the re-reflection of light across the entire wavelength range, and improving the image display quality.

[0107] Continuing to refer to FIG. 9 , in some embodiments, the morphologies of the plurality of roughened protrusions may be the same, that is, the plurality of roughened protrusions may be of regular sizes.

[0108] 7 to 9 , in some embodiments, the micro display chip 10 includes: a driving backplane 11 , and a light emitting array 12 disposed on the driving backplane 11 ; the light emitting array 12 is located in the light emitting area I.

[0109] 7 to 9 , in some embodiments, the metal layer 13 is electrically connected to the light emitting array 12 , and the metal layer 13 serves as an electrode electrically connected to the light emitting array 12 .

[0110] 7 to 9 , in some embodiments, the light emitting array 12 includes: a plurality of light emitting mesas 121 arranged in an array, the light emitting mesas 121 are electrically connected to the driving backplane 11 , and the driving backplane 11 is used to control the lighting and extinguishing of the light emitting mesas 121 .

[0111] 7 to 9 , in some embodiments, the micro display chip 10 further includes a current spreading structure 15 disposed on adjacent light-emitting mesas 121 to achieve a current spreading effect.

[0112] 7 to 9 , in some embodiments, the microdisplay chip 10 further includes: a plurality of microlenses 16 , the number of the microlenses 16 being the same as the number of the light-emitting mesas 121 , and a microlens 16 is provided on a side of each light-emitting mesa 121 away from the driving backplane 11 .

[0113] In some embodiments, the light absorbing layer 14 may be made of photoresist, gray resist, inorganic anti-reflective material, or black inorganic material.

[0114] In some embodiments, the roughened protrusions are in a conical structure; wherein the bottom width of the roughened protrusions is 50 nanometers to 200 nanometers, and the height of the roughened protrusions is 50 nanometers to 300 nanometers.

[0115] Please continue to refer to Figure 8. In some embodiments, it also includes: a connecting wire 30, including a first connecting end and a second connecting end relative to each other, the first connecting end of the connecting wire 30 is electrically connected to the micro display chip 10; a connector 40, the second connecting end of the connecting wire 30 is electrically connected to the connector 40, and the connector 40 is connected to a matching device in the outside world.

[0116] 10 and 11 , in some embodiments, a light absorption layer 14 is disposed in the gaps between adjacent microlenses 16 , and the surface of the light absorption layer 14 in the gaps between adjacent microlenses 16 has a plurality of roughened protrusions.

[0117] Continuing to refer to FIG. 10 , adjacent micro lenses 16 are arranged in contact with each other, and the light absorbing layer 14 is located above the connection between the two micro lenses 16 .

[0118] 11 , there is a certain gap between adjacent microlenses 16 , part of the light absorption layer 14 is located inside the gap between two adjacent microlenses 16 , and part of the light absorption layer 14 is located above the connection between two adjacent microlenses 16 .

[0119] In some embodiments, positions of the roughened protrusions between adjacent microlenses 16 are arranged corresponding to the current spreading structures 15 .

[0120] Correspondingly, an embodiment of the present invention further provides a micro display chip, please continue to refer to Figures 7 to 9, which includes: a light-emitting area I; a non-light-emitting area II located around the light-emitting area I; a metal layer 13 located in the non-light-emitting area II; and a light-absorbing layer 14 located on the metal layer 13, the surface of the light-absorbing layer 14 having a plurality of roughened protrusions.

[0121] The light absorbing layer 14 is located on the metal layer 13, and the surface of the light absorbing layer 14 has a non-flat surface with several roughened protrusions. The surface area of ​​the non-flat light absorbing layer 14 is increased, and the light emitted from the light emitting area I is reflected by the outside world and then reaches the surface of the light absorbing layer 14 to produce diffuse reflection, thereby effectively reducing the re-reflection of the full-band light and improving the picture display quality.

[0122] Continuing with FIG7 , in some embodiments, the roughened convex portions have different morphologies, i.e., the roughened convex portions are irregularly sized. The irregularly sized roughened convex portions can effectively enhance the diffuse reflection effect, further reducing the re-reflection of light across the entire wavelength range, and improving the image display quality.

[0123] Continuing with FIG. 9 , in some embodiments, the morphologies of the roughened protrusions are the same.

[0124] Please continue to refer to Figures 7 and 9. In some embodiments, the system further includes: a driving backplane 11; a light-emitting array 12 disposed on the driving backplane 11, and the light-emitting array 12 is located in the light-emitting area I.

[0125] 7 and 9 , in some embodiments, the metal layer 13 is electrically connected to the light emitting array 12 , and the metal layer 13 serves as an electrode electrically connected to the light emitting array 12 .

[0126] 7 and 9 , in some embodiments, the top conductive layer 17 is further included on the top of the light emitting array 12 , the top conductive layer 17 is electrically connected to the top of the light emitting array 12 , and the top conductive layer 17 is electrically connected to the metal layer 13 .

[0127] 7 and 9 , in some embodiments, the light emitting array 12 includes: a plurality of light emitting mesas 121 arranged in an array, the light emitting mesas 121 are electrically connected to the driving backplane 11 , and the driving backplane 11 is used to control the lighting and extinguishing of the light emitting mesas 121 .

[0128] 7 and 9 , in some embodiments, the present invention further includes: a current spreading structure 15 disposed between adjacent light-emitting mesas 121 , and the current spreading structure 15 is electrically connected to the top conductive layer 17 .

[0129] 7 and 9 , in some embodiments, the system further includes: a plurality of microlenses 16 , the number of the microlenses 16 being the same as the number of the light-emitting mesas 121 , and a microlens 16 is provided on a side of each light-emitting mesas 121 away from the driving backplane 11 .

[0130] 7 and 9 , in some embodiments, a light absorption layer 14 is disposed in the gaps between adjacent microlenses 16 , and the surface of the light absorption layer 14 in the gaps between adjacent microlenses 16 has a plurality of roughened protrusions.

[0131] Continuing to refer to FIG. 7 and FIG. 9 , in some embodiments, the positions of the roughened protrusions between adjacent microlenses 16 correspond to the positions of the current spreading structures 15 .

[0132] In some embodiments, the material of the light absorbing layer 14 includes photoresist, gray resist, inorganic anti-reflective material, or black inorganic material.

[0133] In some embodiments, the roughened protrusions are in a conical structure; wherein the bottom width of the roughened protrusions is 50 nanometers to 200 nanometers, and the height of the roughened protrusions is 50 nanometers to 300 nanometers.

[0134] In some embodiments, the metal layer 13 and the light absorbing layer 14 having a plurality of roughened protrusions on the surface are arranged around the light emitting area I.

[0135] Correspondingly, the technical solution of the present invention further provides a near-eye display device, comprising: a micro display chip as described in any one of the above embodiments.

[0136] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be based on the scope defined by the claims.

Claims

1. A micro display chip, characterized in that: include: Luminous area; a non-luminous area surrounding the luminous area; a metal layer located in the non-light-emitting area; The light absorbing layer is located on the metal layer, and the surface of the light absorbing layer has a plurality of roughened protrusions.

2. The micro display chip according to claim 1, wherein: The morphologies of the roughened protrusions are different.

3. The micro display chip according to claim 1, wherein: The morphologies of the roughened protrusions are the same.

4. The micro display chip according to claim 1, wherein: Also includes: Driving backplane: A light emitting array is provided on the driving backplane, and the light emitting array is located in the light emitting area.

5. The micro display chip according to claim 4, wherein: The metal layer is electrically connected to the light emitting array, and the metal layer serves as an electrode electrically connected to the light emitting array.

6. The micro display chip according to claim 5, wherein: Also includes: A top conductive layer is located on the top of the light emitting array, wherein the top conductive layer is electrically connected to the top of the light emitting array and is electrically connected to the metal layer.

7. The micro display chip according to claim 6, wherein: The light emitting array includes: a plurality of light emitting mesas arranged in an array, the light emitting mesas are electrically connected to the driving backplane, and the driving backplane is used to control the lighting and extinguishing of the light emitting mesas.

8. The micro display chip according to claim 7, wherein: Also includes: A current spreading structure is disposed between adjacent light-emitting mesas, and the current spreading structure is electrically connected to the top conductive layer.

9. The micro display chip according to claim 8, wherein: Also includes: A plurality of micro lenses, the number of the micro lenses is the same as the number of the light emitting mesas, and one micro lens is provided on a side of each light emitting mesas away from the driving back plate.

10. The micro display chip according to claim 9, wherein: The light absorption layer is provided in the gap between adjacent micro lenses, and the surface of the light absorption layer in the gap between adjacent micro lenses has a plurality of roughened convex portions.

11. The micro display chip according to claim 10, wherein: Positions of the roughened protrusions between adjacent microlenses correspond to positions of the current spreading structures.

12. The micro display chip according to claim 1, wherein: The material of the light absorbing layer includes: photoresist, gray glue, inorganic anti-reflective material or black inorganic material.

13. The micro display chip according to claim 1, wherein: The roughened convex portion has a conical structure; wherein the bottom width of the roughened convex portion is 50 nanometers to 200 nanometers, and the height of the roughened convex portion is 50 nanometers to 300 nanometers.

14. The micro display chip according to any one of claims 1 to 13, wherein: The metal layer and the light absorbing layer having a plurality of roughened convex portions on the surface are arranged around the light emitting area.

15. A micro display panel, characterized in that: include: The microdisplay chip according to any one of claims 1 to 14; An outer frame surrounds and encapsulates the micro display chip, wherein the outer frame exposes the light emitting area and the light absorbing layer of the micro display chip.

16. The micro display panel according to claim 15, characterized in that: The top height of the outer frame is higher than the height of the light absorbing layer.

17. The micro display panel according to claim 15, characterized in that: The top height of the outer frame is flush with the height of the light absorbing layer.

18. The micro display panel according to claim 15, wherein: The top height of the outer frame is lower than the height of the light absorbing layer.

19. The micro display panel according to claim 15, wherein: Also includes: The connecting wire includes a first connecting end and a second connecting end opposite to each other, wherein the first connecting end of the connecting wire is electrically connected to the micro display chip; and the connector includes a second connecting end of the connecting wire electrically connected to the connector, and the connector is connected to a matching device in the outside world.

20. A method for forming a micro display panel, characterized in that: include: A micro display chip is provided, wherein the micro display chip includes a light emitting area and a non-light emitting area surrounding the light emitting area; forming a metal layer in the non-light-emitting area; forming a light absorbing layer on the metal layer, wherein the surface of the light absorbing layer has a plurality of roughened protrusions; The micro display chip is encapsulated around an outer frame, and the outer frame exposes the light emitting area and the light absorbing layer of the micro display chip.

21. The method for forming a micro display panel according to claim 20, wherein: The method for forming the light-absorbing layer on the metal layer includes: forming a light-absorbing material layer on the metal layer by at least one coating and exposure and development process; roughening the surface of the light-absorbing material layer to form the light-absorbing layer, so that the surface of the light-absorbing layer has a plurality of roughened protrusions; wherein the coating and exposure and development method includes: forming a light-absorbing material film on the metal layer and the light-emitting area; exposing and developing the light-absorbing material film based on a mask to remove the light-absorbing material film formed on the light-emitting area.

22. The method for forming a micro display panel according to claim 21, wherein: The method of roughening the surface of the light absorbing material layer includes: roughening the surface of the light absorbing material layer by an ion etching process, so that the surface of the light absorbing layer has a plurality of roughened protrusions, and the morphologies of the roughened protrusions are different.

23. The method for forming a micro display panel according to claim 22, wherein: The etching gas in the ion etching process includes one or more of O2, CF4 and CL2.

24. The method for forming a micro display panel according to claim 22, wherein: The method for roughening the surface of the light-absorbing material layer includes: roughening the surface of the light-absorbing material layer using a mold embossing process so that the surface of the light-absorbing layer has a plurality of roughened protrusions, and the morphologies of the plurality of roughened protrusions are the same.

25. The method for forming a micro display panel according to claim 22, wherein: After forming the light absorbing layer and before adopting the outer frame for packaging, the method further includes: baking the light absorbing layer.

26. The method for forming a micro display panel according to claim 25, wherein: The baking temperature of the baking treatment is 120 degrees Celsius to 150 degrees Celsius, and the baking time is 50 minutes to 100 minutes.

27. A near-eye display device, characterized in that: include: The microdisplay chip according to any one of claims 1 to 13.

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