Miniature organic light-emitting device and anode structure thereof, and manufacturing process

Abstract

The present application provides a miniature organic light-emitting device and an anode structure thereof, and a manufacturing process. The anode structure comprises a substrate, and a first stack structure, a second stack structure, and a third stack structure which are separately spaced on one side surface of the substrate and have different thicknesses. The first stack structure corresponds to a blue pixel area, the second stack structure corresponds to a green pixel area, and the third stack structure corresponds to a red pixel area. In the anode structure of the miniature organic light-emitting device provided in the present application, the variation in anode thickness across pixels of different colors enables different microcavity effects of pixel base layers of different colors, thereby achieving the effect of enhancing both luminance and gamut.

Description

A micro organic light-emitting device and its anode structure and manufacturing process Technical Field

[0001] The present application belongs to the technical field of display devices and relates to an anode structure of a micro organic light-emitting device, and in particular to a micro organic light-emitting device and its anode structure and manufacturing process. Background Art

[0002] Existing micro-organic light-emitting devices, such as silicon-based organic light-emitting display devices, mainly use a white light OLED + color filter structure to achieve colorization. The main reason is that micro-displays require a very high display resolution (generally >2000PPI), and the traditional precision mask evaporation method is limited by the mask production accuracy and opening size. The world's most advanced process capabilities can achieve a minimum opening size of 10μm, but the pixel size of a micro-display is generally 3×7μm square, 6μm hexagonal high, etc., which is much smaller than the mask opening.

[0003] However, achieving colorization with a white OLED and color filters sacrifices significant brightness. Furthermore, since the three colors of RGB light correspond to optical microcavities of different thicknesses, a top-emitting WOLED with a single optical thickness cannot maximize the intensity of each of the three colors. Furthermore, the mainstream approach to colorization with silicon-based OLEDs is to combine white OLEDs with color gels. Since white light contains the RGB spectrum, the color gels cannot completely filter out the other two colors, leaving only the desired color visible, resulting in a relatively poor color gamut. Therefore, improving brightness and color gamut is a challenge in silicon-based microdisplay technology solutions.

[0004] CN115568242A discloses a silicon-based OLED display device and a manufacturing method. The method includes: forming anodes for multiple light-emitting devices on a silicon-based backplane; wherein the colors of the light-emitting devices include at least a first color, a second color, and a third color, and the anodes include at least a first anode, a second anode, and a third anode; forming a first-color light-emitting device on the first anode; forming a second-color light-emitting device on the second anode; and forming a third-color light-emitting device on the third anode; forming a first thin-film encapsulation layer between the light-emitting devices; and sequentially forming a complete common cathode layer, a first light extraction layer, and a second thin-film encapsulation layer. However, this silicon-based OLED display device suffers from low brightness and color gamut.

[0005] CN114497430A discloses a method for preparing an anode structure for a silicon-based OLED, belonging to the field of display technology. The method includes the following steps: Step 1: forming an anode reflective layer on a silicon-based backplane, with a gap between two adjacent first steps of the anode reflective layer; Step 2: forming a pixel defining layer of a first preset thickness on the side of the anode reflective layer facing away from the silicon-based backplane, with the pixel defining layer filling the gap in the anode reflective layer and exceeding the upper surface of the anode reflective layer; Step 3: grinding the surface of the pixel defining layer through a grinding process to ensure that the surface of the end of the pixel defining layer facing away from the anode reflective layer is level and does not expose the anode reflective layer, and the overall thickness of the pixel defining layer is greater than the overall thickness of the anode reflective layer; then, patterning the pixel defining layer to form a PDL hole, with the PDL hole corresponding to the first step; and Step 4: sequentially fabricating the organic light-emitting layer, common cathode layer, and encapsulation layer required for the anode reflective layer. However, the brightness and color gamut of micro-organic light-emitting devices fabricated based on this silicon-based OLED anode structure are relatively low.

[0006] In summary, existing silicon-based microdisplays employ white light OLEDs combined with color filters (CF) to achieve colorization. This results in low filter transmittance, leading to low final brightness. Furthermore, since white light OLEDs have three color spectra (RGB), color filters are unable to effectively filter out the other two colors. Consequently, silicon-based OLED products suffer from low brightness and a narrow color gamut. Therefore, developing a novel micro-organic light-emitting device, its anode structure, and manufacturing process are crucial to address these issues. Summary of the Invention

[0007] The present application provides a micro organic light-emitting device, its anode structure, and manufacturing process. The anode structure of the micro organic light-emitting device provided by the present application has different anode thicknesses corresponding to pixels of different colors, thereby realizing different microcavity effects at the bottom layers of pixels of different colors, thereby achieving the effect of improving brightness and color gamut.

[0008] In a first aspect, the present application provides an anode structure of a micro organic light-emitting device, wherein the anode structure includes a substrate, and a first stacked structure, a second stacked structure, and a third stacked structure with different thicknesses that are independently arranged on a surface of one side of the substrate, wherein the first stacked structure corresponds to a blue pixel area, the second stacked structure corresponds to a green pixel area, and the third stacked structure corresponds to a red pixel area.

[0009] In the anode structure of the micro organic light-emitting device provided in the present application, the anode thickness corresponding to pixels of different colors is different, realizing the different microcavity effects at the bottom layers of pixels of different colors, thereby achieving the effect of improving brightness and color gamut.

[0010] Preferably, the first stacked structure includes an Al layer, a TiN layer and an ITO layer stacked in sequence in a direction away from the substrate.

[0011] Preferably, the thickness of the Al layer in the first stacked structure is 80 to 120 nm, for example, it can be 80 nm, 85 nm, 90 nm, 95 nm, 100 nm, 105 nm, 110 nm, 115 nm or 120 nm, but is not limited to the listed values, and other unlisted values ​​within this numerical range are also applicable.

[0012] Preferably, the thickness of the TiN layer in the first stacked structure is 3 to 8 nm, for example, it can be 3 nm, 3.5 nm, 4 nm, 4.5 nm, 5 nm, 5.5 nm, 6 nm, 6.5 nm, 7 nm, 7.5 nm or 8 nm, but is not limited to the listed values, and other unlisted values ​​within this numerical range are also applicable.

[0013] Preferably, the thickness of the ITO layer in the first stacked structure is 10 to 30 nm, for example, 10 nm, 15 nm, 20 nm, 25 nm or 30 nm, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0014] Preferably, the second stacked structure includes an Al layer, a TiN layer, a first ITO layer and a second ITO layer stacked in sequence in a direction away from the substrate.

[0015] Preferably, the thickness of the Al layer in the second stacked structure is 80 to 120 nm, for example, it can be 80 nm, 85 nm, 90 nm, 95 nm, 100 nm, 105 nm, 110 nm, 115 nm or 120 nm, but is not limited to the listed values, and other unlisted values ​​within this numerical range are also applicable.

[0016] Preferably, the thickness of the TiN layer in the second stacked structure is 3 to 8 nm, for example, it can be 3 nm, 3.5 nm, 4 nm, 4.5 nm, 5 nm, 5.5 nm, 6 nm, 6.5 nm, 7 nm, 7.5 nm or 8 nm, but is not limited to the listed values, and other unlisted values ​​within this numerical range are also applicable.

[0017] Preferably, the thickness of the first ITO layer in the second stacked structure is 20 to 50 nm, for example, it can be 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm or 50 nm, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0018] Preferably, the thickness of the second ITO layer in the second stacked structure is 10 to 30 nm, for example, 10 nm, 15 nm, 20 nm, 25 nm or 30 nm, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0019] Preferably, the third stacked structure includes an Al layer, a first TiN layer, a first ITO layer, a second TiN layer, a second ITO layer and a third ITO layer which are sequentially stacked in a direction away from the substrate.

[0020] Preferably, the thickness of the Al layer in the third stacked structure is 80 to 120 nm, for example, it can be 80 nm, 85 nm, 90 nm, 95 nm, 100 nm, 105 nm, 110 nm, 115 nm or 120 nm, but is not limited to the listed values, and other unlisted values ​​within this numerical range are also applicable.

[0021] Preferably, the thickness of the first TiN layer in the third stacked structure is 3 to 8 nm, for example, it can be 3 nm, 3.5 nm, 4 nm, 4.5 nm, 5 nm, 5.5 nm, 6 nm, 6.5 nm, 7 nm, 7.5 nm or 8 nm, but is not limited to the listed values, and other unlisted values ​​within this numerical range are also applicable.

[0022] Preferably, the thickness of the first ITO layer in the third stacked structure is 20 to 50 nm, for example, it can be 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm or 50 nm, but is not limited to the listed values, and other unlisted values ​​within this numerical range are also applicable.

[0023] Preferably, the thickness of the second TiN layer in the third stacked structure is 3 to 8 nm, for example, it can be 3 nm, 3.5 nm, 4 nm, 4.5 nm, 5 nm, 5.5 nm, 6 nm, 6.5 nm, 7 nm, 7.5 nm or 8 nm, but is not limited to the listed values, and other unlisted values ​​within this numerical range are also applicable.

[0024] Preferably, the thickness of the second ITO layer in the third stacked structure is 50 to 200 nm, for example, it can be 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, 110 nm, 120 nm, 130 nm, 140 nm, 150 nm, 160 nm, 170 nm, 180 nm, 190 nm or 200 nm, but is not limited to the listed values, and other unlisted values ​​within this numerical range are also applicable.

[0025] Preferably, the thickness of the third ITO layer in the third stacked structure is 10 to 30 nm, for example, 10 nm, 15 nm, 20 nm, 25 nm or 30 nm, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0026] Preferably, a filling layer is provided at the interval between the first stacked structure and the second stacked structure, and at the interval between the second stacked structure and the third stacked structure on the surface of the substrate.

[0027] Preferably, the filling layer comprises a SiO layer.

[0028] In a second aspect, the present application provides a manufacturing process for the anode structure according to the first aspect, the manufacturing process comprising:

[0029] At least one Al layer, at least one TiN layer and at least one ITO layer are stacked and plated on a substrate, and etching is performed in combination with a photoresist and an etching process to form a first stacked structure, a second stacked structure and a third stacked structure with different thicknesses that are independently arranged at intervals on a surface of one side of the substrate to obtain the anode structure.

[0030] In the present application, an anode structure is prepared by multiple exposure and development steps of a photoresist and etching process and ITO coating, wherein different color pixels in the anode structure correspond to different anode thicknesses.

[0031] Preferably, the manufacturing process comprises:

[0032] An Al layer, a TiN layer, an ITO layer, a TiN layer, and an ITO layer are sequentially plated on the substrate. First, the ITO layer, the TiN layer, and the ITO layer arranged in sequence from top to bottom at positions corresponding to the blue pixel area are removed. Second, the ITO layer and the TiN layer arranged in sequence from top to bottom at positions corresponding to the green pixel area are removed, and an ITO layer is plated on the entire top surface. Third, the Al layer, the TiN layer, the ITO layer, the TiN layer, the ITO layer, and the ITO layer arranged in sequence from bottom to top at positions other than positions corresponding to the blue pixel area, the green pixel area, and the red pixel area are removed to obtain the anode structure.

[0033] Preferably, the manufacturing process further comprises filling a SiO layer above the substrate at positions other than positions corresponding to the blue pixel region, the green pixel region and the red pixel region after the third removal.

[0034] As a preferred embodiment of the manufacturing process described in this application, the manufacturing process includes:

[0035] (1) Plating an Al layer, a TiN layer, an ITO layer, a TiN layer, and an ITO layer on the substrate in sequence, then coating the entire top surface with photoresist, then removing the photoresist at the position corresponding to the blue pixel area, and then first removing the ITO layer, the TiN layer, and the ITO layer arranged in sequence from the top to the bottom at the position corresponding to the blue pixel area by etching, and then removing the remaining photoresist;

[0036] (2) coating the entire top surface of the structure obtained in step (1) with photoresist, then removing the photoresist at the position corresponding to the green pixel area, then removing the ITO layer and the TiN layer arranged in sequence from the top to the bottom at the position corresponding to the green pixel area by etching, and then removing the remaining photoresist;

[0037] (3) plating an ITO layer on the entire surface of the top of the structure obtained in step (2);

[0038] (4) applying photoresist to the entire top surface of the structure obtained in step (3), then removing the photoresist at positions other than the positions corresponding to the blue pixel region, the green pixel region, and the red pixel region, and then removing the Al layer, TiN layer, ITO layer, TiN layer, ITO layer, and ITO layer arranged in sequence from the bottom to the top by etching the third position other than the positions corresponding to the blue pixel region, the green pixel region, and the red pixel region, and then removing the remaining photoresist;

[0039] (5) Filling a SiO layer above the substrate at positions other than the corresponding positions of the blue pixel region, the green pixel region, and the red pixel region of the structure obtained in step (4) to obtain the anode structure.

[0040] In a third aspect, the present application provides a micro organic light-emitting device, wherein the micro organic light-emitting device includes the anode structure described in the first aspect.

[0041] Compared with the prior art, this application has the following beneficial effects:

[0042] The different anode thicknesses corresponding to pixels of different colors in the anode structure of the micro organic light-emitting device provided in the present application realize different microcavity effects in the bottom layers of pixels of different colors, thereby achieving the effect of improving brightness and color gamut. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] FIG1 is a schematic structural diagram of the anode structure of the micro organic light-emitting device in Example 1 of the present application.

[0044] FIG2 is a flow chart of step (1) in the manufacturing process of the anode structure in Example 1 of the present application.

[0045] FIG3 is a flow chart of step (2) in the manufacturing process of the anode structure in Example 1 of the present application.

[0046] FIG4 is a flow chart of steps (3) to (4) in the manufacturing process of the anode structure in Example 1 of the present application.

[0047] FIG5 is a flow chart of step (5) in the manufacturing process of the anode structure in Example 1 of the present application.

[0048] Among them, 1-substrate; 2-first stacking structure; 3-second stacking structure; 4-third stacking structure; 5-SiO layer. DETAILED DESCRIPTION

[0049] The technical solution of the present application is further described below through specific implementation methods. Those skilled in the art should understand that the embodiments are only used to help understand the present application and should not be regarded as specific limitations of the present application.

[0050] Example 1

[0051] This embodiment provides an anode structure of a micro organic light-emitting device as shown in FIG1 . The anode structure includes a substrate 1, and a first stacked structure 2, a second stacked structure 3, and a third stacked structure 4 of different thicknesses independently and spaced apart on a side surface of the substrate 1. The first stacked structure 2 corresponds to a blue pixel region, the second stacked structure 3 corresponds to a green pixel region, and the third stacked structure 4 corresponds to a red pixel region.

[0052] The first stacked structure 2 includes an Al layer with a thickness of 100 nm, a TiN layer with a thickness of 5 nm, and an ITO layer with a thickness of 20 nm, which are sequentially stacked in a direction away from the substrate 1;

[0053] The second stacked structure 3 includes an Al layer with a thickness of 100 nm, a TiN layer with a thickness of 5 nm, a first ITO layer with a thickness of 30 nm, and a second ITO layer with a thickness of 20 nm, which are sequentially stacked in a direction away from the substrate 1;

[0054] The third stacked structure 4 includes an Al layer with a thickness of 100 nm, a first TiN layer with a thickness of 5 nm, a first ITO layer with a thickness of 30 nm, a second TiN layer with a thickness of 5 nm, a second ITO layer with a thickness of 125 nm, and a third ITO layer with a thickness of 20 nm, which are stacked in sequence away from the substrate 1;

[0055] On the surface of the substrate 1 , a SiO layer 5 is provided at the interval between the first stacked structure 2 and the second stacked structure 3 , and at the interval between the second stacked structure 3 and the third stacked structure 4 .

[0056] The manufacturing process of the anode structure includes:

[0057] (1) As shown in FIG2 , an Al layer, a TiN layer, an ITO layer, a TiN layer, and an ITO layer are sequentially plated on a substrate 1, and then a photoresist is applied to the entire top surface. The photoresist at the position corresponding to the blue pixel area is removed, and then the ITO layer, the TiN layer, and the ITO layer arranged sequentially from the top to the bottom at the position corresponding to the blue pixel area are first removed by etching, and then the remaining photoresist is removed;

[0058] (2) As shown in FIG3 , a photoresist is applied to the entire top surface of the structure obtained in step (1), and then the photoresist at the position corresponding to the green pixel area is removed. Subsequently, the ITO layer and the TiN layer arranged sequentially from the top to the bottom at the position corresponding to the green pixel area are removed by etching for a second time, and then the remaining photoresist is removed;

[0059] (3) As shown in FIG4 , an ITO layer is plated on the entire surface of the top of the structure obtained in step (2);

[0060] (4) As shown in FIG4 , the entire top surface of the structure obtained in step (3) is coated with photoresist, and then the photoresist at positions other than the positions corresponding to the blue pixel region, the green pixel region, and the red pixel region is removed. Subsequently, the positions other than the positions corresponding to the blue pixel region, the green pixel region, and the red pixel region are removed by etching, and then the remaining photoresist is removed after the Al layer, TiN layer, ITO layer, TiN layer, ITO layer, and ITO layer are sequentially arranged from the bottom to the top.

[0061] (5) As shown in FIG5 , a SiO layer 5 is filled on the substrate 1 at positions other than the corresponding positions of the blue pixel region, the green pixel region, and the red pixel region of the structure obtained in step (4) to obtain the anode structure.

[0062] Example 2

[0063] This embodiment provides an anode structure for a micro organic light-emitting device, comprising a substrate 1, and a first stacked structure 2, a second stacked structure 3, and a third stacked structure 4, each having different thicknesses, independently disposed on a side surface of the substrate 1. The first stacked structure 2 corresponds to a blue pixel region, the second stacked structure 3 corresponds to a green pixel region, and the third stacked structure 4 corresponds to a red pixel region.

[0064] The first stacked structure 2 includes an Al layer with a thickness of 80 nm, a TiN layer with a thickness of 8 nm, and an ITO layer with a thickness of 30 nm, which are sequentially stacked in a direction away from the substrate 1;

[0065] The second stacked structure 3 includes an Al layer with a thickness of 80 nm, a TiN layer with a thickness of 8 nm, a first ITO layer with a thickness of 20 nm, and a second ITO layer with a thickness of 30 nm, which are sequentially stacked in a direction away from the substrate 1;

[0066] The third stacked structure 4 includes an Al layer with a thickness of 80 nm, a first TiN layer with a thickness of 8 nm, a first ITO layer with a thickness of 20 nm, a second TiN layer with a thickness of 3 nm, a second ITO layer with a thickness of 50 nm, and a third ITO layer with a thickness of 30 nm, which are stacked in sequence away from the substrate 1;

[0067] On the surface of the substrate 1 , a SiO layer 5 is provided at the interval between the first stacked structure 2 and the second stacked structure 3 , and at the interval between the second stacked structure 3 and the third stacked structure 4 .

[0068] The manufacturing process of the anode structure includes:

[0069] (1) An Al layer, a TiN layer, an ITO layer, a TiN layer, and an ITO layer are sequentially plated on a substrate 1, and then a photoresist is applied to the entire top surface. The photoresist at a position corresponding to the blue pixel area is removed, and then the ITO layer, the TiN layer, and the ITO layer arranged sequentially from the top to the bottom at a position corresponding to the blue pixel area are first removed by etching, and then the remaining photoresist is removed;

[0070] (2) coating the entire top surface of the structure obtained in step (1) with photoresist, then removing the photoresist at the position corresponding to the green pixel area, then removing the ITO layer and the TiN layer arranged in sequence from the top to the bottom at the position corresponding to the green pixel area by etching, and then removing the remaining photoresist;

[0071] (3) plating an ITO layer on the entire surface of the top of the structure obtained in step (2);

[0072] (4) applying photoresist to the entire top surface of the structure obtained in step (3), removing the photoresist at positions other than the positions corresponding to the blue pixel region, the green pixel region, and the red pixel region, and then removing the Al layer, TiN layer, ITO layer, TiN layer, ITO layer, and ITO layer arranged in sequence from the bottom to the top by etching the third position other than the positions corresponding to the blue pixel region, the green pixel region, and the red pixel region, and then removing the remaining photoresist;

[0073] (5) Filling a SiO layer 5 above the substrate 1 at positions other than the corresponding positions of the blue pixel region, the green pixel region, and the red pixel region of the structure obtained in step (4) to obtain the anode structure.

[0074] Example 3

[0075] This embodiment provides an anode structure for a micro organic light-emitting device, comprising a substrate 1, and a first stacked structure 2, a second stacked structure 3, and a third stacked structure 4, each having different thicknesses, independently disposed on a side surface of the substrate 1. The first stacked structure 2 corresponds to a blue pixel region, the second stacked structure 3 corresponds to a green pixel region, and the third stacked structure 4 corresponds to a red pixel region.

[0076] The first stacked structure 2 includes an Al layer with a thickness of 120 nm, a TiN layer with a thickness of 3 nm, and an ITO layer with a thickness of 10 nm, which are sequentially stacked in a direction away from the substrate 1;

[0077] The second stacked structure 3 includes an Al layer with a thickness of 120 nm, a TiN layer with a thickness of 3 nm, a first ITO layer with a thickness of 50 nm, and a second ITO layer with a thickness of 10 nm, which are sequentially stacked in a direction away from the substrate 1;

[0078] The third stacked structure 4 includes an Al layer with a thickness of 120 nm, a first TiN layer with a thickness of 3 nm, a first ITO layer with a thickness of 50 nm, a second TiN layer with a thickness of 8 nm, a second ITO layer with a thickness of 200 nm, and a third ITO layer with a thickness of 10 nm, which are stacked in sequence away from the substrate 1;

[0079] On the surface of the substrate 1 , a SiO layer 5 is provided at the interval between the first stacked structure 2 and the second stacked structure 3 , and at the interval between the second stacked structure 3 and the third stacked structure 4 .

[0080] The manufacturing process of the anode structure includes:

[0081] (1) An Al layer, a TiN layer, an ITO layer, a TiN layer, and an ITO layer are sequentially plated on a substrate 1, and then a photoresist is applied to the entire top surface. The photoresist at a position corresponding to the blue pixel area is removed, and then the ITO layer, the TiN layer, and the ITO layer arranged sequentially from the top to the bottom at a position corresponding to the blue pixel area are first removed by etching, and then the remaining photoresist is removed;

[0082] (2) coating the entire top surface of the structure obtained in step (1) with photoresist, then removing the photoresist at the position corresponding to the green pixel area, then removing the ITO layer and the TiN layer arranged in sequence from the top to the bottom at the position corresponding to the green pixel area by etching, and then removing the remaining photoresist;

[0083] (3) plating an ITO layer on the entire surface of the top of the structure obtained in step (2);

[0084] (4) applying photoresist to the entire top surface of the structure obtained in step (3), removing the photoresist at positions other than the positions corresponding to the blue pixel region, the green pixel region, and the red pixel region, and then removing the Al layer, TiN layer, ITO layer, TiN layer, ITO layer, and ITO layer arranged in sequence from the bottom to the top by etching the third position other than the positions corresponding to the blue pixel region, the green pixel region, and the red pixel region, and then removing the remaining photoresist;

[0085] (5) Filling a SiO layer 5 above the substrate 1 at positions other than the corresponding positions of the blue pixel region, the green pixel region, and the red pixel region of the structure obtained in step (4) to obtain the anode structure.

[0086] Example 4

[0087] This embodiment provides an anode structure of a micro organic light-emitting device, which is the same as that of the first embodiment except that the TiN layer with a thickness of 5 nm in the first stacked structure 2 is omitted.

[0088] Example 5

[0089] This embodiment provides an anode structure of a micro organic light-emitting device, which is the same as that of the first embodiment except that the TiN layer with a thickness of 5 nm in the second stacked structure 3 is omitted.

[0090] Example 6

[0091] This embodiment provides an anode structure of a micro organic light-emitting device, which is the same as that of the first embodiment 1 except that the first TiN layer with a thickness of 5 nm in the third stacked structure 4 is omitted.

[0092] Example 7

[0093] This embodiment provides an anode structure of a micro organic light-emitting device, which is the same as that of embodiment 1 except that the thickness of the Al layer in the first stacked structure 2 , the second stacked structure 3 and the third stacked structure 4 is 60 nm.

[0094] Example 8

[0095] This embodiment provides an anode structure of a micro organic light-emitting device, which is the same as that of embodiment 1 except that the thickness of the Al layer in the first stacked structure 2 , the second stacked structure 3 and the third stacked structure 4 is 150 nm.

[0096] Example 9

[0097] This embodiment provides an anode structure of a micro organic light-emitting device, which is the same as that of embodiment 1 except that the thicknesses of the TiN layer in the first stacked structure 2 , the TiN layer in the second stacked structure 3 , and the first TiN layer in the third stacked structure 4 are all 1 nm.

[0098] Example 10

[0099] This embodiment provides an anode structure of a micro organic light-emitting device, which is the same as that of embodiment 1 except that the thicknesses of the TiN layer in the first stacked structure 2, the TiN layer in the second stacked structure 3, and the first TiN layer in the third stacked structure 4 are all 10 nm.

[0100] Example 11

[0101] This embodiment provides an anode structure of a micro organic light-emitting device, which is the same as that of Example 1 except that the thicknesses of the ITO layer in the first stacked structure 2, the second ITO layer in the second stacked structure 3, and the third ITO layer in the third stacked structure 4 are all 5 nm.

[0102] Example 12

[0103] This embodiment provides an anode structure of a micro organic light-emitting device, which is the same as that of embodiment 1 except that the thicknesses of the ITO layer in the first stacked structure 2, the second ITO layer in the second stacked structure 3, and the third ITO layer in the third stacked structure 4 are all 50 nm.

[0104] Comparative Example 1

[0105] This comparative example provides an anode structure of a micro organic light-emitting device, which is the same as Example 1 except that the second ITO layer with a thickness of 30 nm in the second stacked structure 3 is omitted, that is, the first stacked structure 2 and the second stacked structure 3 have the same thickness.

[0106] Comparative Example 2

[0107] This comparative example provides an anode structure of a micro organic light-emitting device, which is the same as Example 1 except that the second TiN layer with a thickness of 5 nm and the first ITO layer with a thickness of 30 nm in the third stacked structure 4 are omitted, that is, the thickness of the third stacked structure 4 is the same as that of the second stacked structure 3.

[0108] Comparative Example 3

[0109] This comparative example provides an anode structure of a micro organic light-emitting device, which is the same as Example 1 except that the first ITO layer with a thickness of 30 nm in the second stacked structure 3 is omitted, and the first ITO layer with a thickness of 30 nm, the second TiN layer with a thickness of 5 nm, and the second ITO layer with a thickness of 125 nm in the third stacked structure 4 are omitted, that is, the thicknesses of the first stacked structure 2, the second stacked structure 3, and the third stacked structure 4 are the same.

[0110] The anode structures provided in Examples 1 to 10 and Comparative Examples 1 to 3 are used to manufacture micro organic light-emitting devices. The manufacturing method includes: preparing Ti, Al, TiN, and ITO thin films by PVD, and preparing SiO by PECVD or CVD. x The thin film was etched using the dry etching method of the EPD process to obtain a micro organic light-emitting device; the obtained micro organic light-emitting device was subjected to a brightness test, which was as follows: after lighting the product, switching to a red screen, and then using a color analyzer PR670 for testing, outputting the brightness and color coordinates, and then switching to green and blue screens in turn, and using the color analyzer to test the output brightness and color coordinates. The test results are shown in Table 1; the obtained micro organic light-emitting device was subjected to a color gamut test, which was as follows: calculating the triangle area S of the triangle formed by connecting the red, green and blue color coordinates tested above, and then the color gamut calculation formula is: color gamut (reference NTSC standard) = S / 0.158×100%. The test results are shown in Table 1.

[0111] Table 1

[0112] From Table 1, we can get:

[0113] (1) The anode structure of the micro organic light-emitting device prepared in Examples 1 to 3 has high brightness and a wide color gamut;

[0114] (2) By comparing Example 1 with Examples 4 to 6, it can be seen that the TiN layer in the first stacked structure 2, the TiN layer in the second stacked structure 3, and the first TiN layer in the third stacked structure 4 in the present application will affect the performance of the anode structure; when the TiN layer in the first stacked structure 2, the TiN layer in the second stacked structure 3, or the first TiN layer in the third stacked structure 4 is omitted, the preparation process of the different thicknesses of ITO on the pixels corresponding to red, green, and blue of the anode structure is uncontrollable, and there is a gap between the color gamut and the estimated design. This is because the thickness originally designed can enhance the color spectra corresponding to red, green, and blue, respectively, and thus achieve the optimization of color coordinates. When the difficulty of controlling the thickness of the anode increases, the design deviates from the actual thickness, the color enhancement effect deteriorates, and the color coordinates cannot be optimized, and the color gamut is reduced;

[0115] (3) By comparing Example 1 with Examples 7 and 8, it can be seen that the thickness of the Al layer in the first stacked structure 2, the second stacked structure 3, and the third stacked structure 4 in the present application will affect the performance of the anode structure; when the thickness of the Al layer is too low, the brightness of the anode structure will be reduced. This is because the Al layer acts as a reflective layer. If the Al layer is too thin, the reflective effect will be poor, which will in turn affect the brightness; when the thickness of the Al layer is too high, the difficulty of anode etching will increase, and the cathode continuity of the OLED device above will be affected, increasing the risk of cathode fracture. This is because the thicker the reflective layer, the steeper the slope, the poorer the cathode coverage, and thus the cathode fracture.

[0116] (4) By comparing Example 1 with Examples 9 and 10, it can be seen that the thickness of the TiN layer in the first stacked structure 2, the TiN layer in the second stacked structure 3, and the first TiN layer in the third stacked structure 4 in the present application will affect the performance of the anode structure; when the TiN is very thin, the difficulty in the preparation process of the TiN film increases. This is because the PVD coating has a film forming rate of about 1 nm, and the thickness is too thin (3 nm and below). The equipment is about to stop working, resulting in uncontrollable film quality and thickness, which in turn affects the quality of the entire film and finally affects the brightness of the device; when the TiN is very thick, it will lead to a decrease in brightness. This is because TiN has a certain light absorption property. As the thickness increases, the light absorption increases, which reduces the overall reflection of the anode, thereby reducing the brightness;

[0117] (5) By comparing Example 1 with Examples 11 and 12, it can be seen that the thickness of the ITO layer in the first stacked structure 2, the second ITO layer in the second stacked structure 3, and the third ITO layer in the third stacked structure 4 in the present application will affect the performance of the anode structure; the ITO thickness needs to be matched according to the device to form a microcavity effect so that the spectral positions corresponding to red, green, and blue are enhanced respectively. Therefore, if the ITO is too thin or too thick, it will affect the microcavity effect of the device, and the color coordinates of red, green, and blue cannot be optimized, which ultimately affects the color gamut of the product;

[0118] (6) By comparing Example 1 with Comparative Examples 1 to 3, it can be seen that the thicknesses of the first stacked structure 2, the second stacked structure 3 and the third stacked structure 4 in the present application cannot be the same in pairs or in threes. The main reason is that the thicknesses of the three film layers of the first stacked structure 2, the second stacked structure 3 and the third stacked structure 4 correspond to the optimal microcavities of the B, R and G spectra respectively, and the microcavities of these three colors cannot be consistent. If they are consistent, at least two color spectra will be close, and the color gamut will eventually be very low.

[0119] The above description is only a specific implementation method of the present application, but the protection scope of the present application is not limited thereto. Those skilled in the art should understand that any changes or replacements that can be easily thought of by those skilled in the art within the technical scope disclosed in the present application fall within the protection scope and disclosure scope of the present application.

Claims

1. An anode structure of a micro organic light-emitting device, comprising a substrate, and a first stacked structure, a second stacked structure, and a third stacked structure having different thicknesses and independently spaced apart on a surface of one side of the substrate, wherein the first stacked structure corresponds to a blue pixel region, the second stacked structure corresponds to a green pixel region, and the third stacked structure corresponds to a red pixel region.

2. The anode structure according to claim 1, wherein: The first stacked structure includes an Al layer, a TiN layer, and an ITO layer stacked in sequence in a direction away from the substrate.

3. The anode structure according to claim 2, wherein: The thickness of the Al layer in the first stacked structure is 80 to 120 nm; Preferably, the thickness of the TiN layer in the first stacked structure is 3 to 8 nm; Preferably, the thickness of the ITO layer in the first stacked structure is 10-30 nm.

4. The anode structure according to any one of claims 1 to 3, wherein: The second stacked structure includes an Al layer, a TiN layer, a first ITO layer, and a second ITO layer stacked in sequence in a direction away from the substrate.

5. The anode structure according to claim 4, wherein: The thickness of the Al layer in the second stacked structure is 80 to 120 nm; Preferably, the thickness of the TiN layer in the second stacked structure is 3 to 8 nm; Preferably, the thickness of the first ITO layer in the second stacked structure is 20 to 50 nm; Preferably, the thickness of the second ITO layer in the second stacked structure is 10-30 nm.

6. The anode structure according to any one of claims 1 to 5, wherein: The third stacked structure includes an Al layer, a first TiN layer, a first ITO layer, a second TiN layer, a second ITO layer and a third ITO layer which are sequentially stacked in a direction away from the substrate.

7. The anode structure according to claim 6, wherein: The thickness of the Al layer in the third stacked structure is 80 to 120 nm; Preferably, the thickness of the first TiN layer in the third stacked structure is 3 to 8 nm; Preferably, the thickness of the first ITO layer in the third stacked structure is 20 to 50 nm; Preferably, the thickness of the second TiN layer in the third stacked structure is 3 to 8 nm; Preferably, the thickness of the second ITO layer in the third stacked structure is 50 to 200 nm; Preferably, the thickness of the third ITO layer in the third stacked structure is 10-30 nm.

8. The anode structure according to any one of claims 1 to 7, wherein: A filling layer is provided on the surface of the substrate at the interval between the first stacking structure and the second stacking structure, and at the interval between the second stacking structure and the third stacking structure; Preferably, the filling layer comprises a SiO layer.

9. A process for manufacturing the anode structure according to any one of claims 1 to 8, comprising: At least one Al layer, at least one TiN layer and at least one ITO layer are stacked and plated on a substrate, and etching is performed in combination with a photoresist and an etching process to form a first stacked structure, a second stacked structure and a third stacked structure with different thicknesses that are independently arranged at intervals on a surface of one side of the substrate to obtain the anode structure.

10. The manufacturing process according to claim 9, wherein: The manufacturing process includes: An Al layer, a TiN layer, an ITO layer, a TiN layer, and an ITO layer are sequentially plated on the substrate. First, the ITO layer, the TiN layer, and the ITO layer arranged in sequence from top to bottom at positions corresponding to the blue pixel area are removed. Second, the ITO layer and the TiN layer arranged in sequence from top to bottom at positions corresponding to the green pixel area are removed, and an ITO layer is plated on the entire top surface. Third, the Al layer, the TiN layer, the ITO layer, the TiN layer, the ITO layer, and the ITO layer arranged in sequence from bottom to top at positions other than positions corresponding to the blue pixel area, the green pixel area, and the red pixel area are removed to obtain the anode structure.

11. The manufacturing process according to claim 10, wherein: The manufacturing process further includes filling a SiO layer above the substrate at positions other than positions corresponding to the blue pixel region, the green pixel region, and the red pixel region after the third removal.

12. The manufacturing process according to any one of claims 9 to 11, wherein: The manufacturing process includes: (1) Plating an Al layer, a TiN layer, an ITO layer, a TiN layer, and an ITO layer on the substrate in sequence, then coating the entire top surface with photoresist, then removing the photoresist at the position corresponding to the blue pixel area, then first removing the ITO layer, the TiN layer, and the ITO layer arranged in sequence from the top to the bottom at the position corresponding to the blue pixel area by etching, and then removing the remaining photoresist; (2) coating the entire top surface of the structure obtained in step (1) with photoresist, then removing the photoresist at the position corresponding to the green pixel area, then removing the ITO layer and the TiN layer arranged in sequence from the top to the bottom at the position corresponding to the green pixel area by etching, and then removing the remaining photoresist; (3) plating an ITO layer on the entire surface of the top of the structure obtained in step (2); (4) applying photoresist to the entire top surface of the structure obtained in step (3), removing the photoresist at positions other than the positions corresponding to the blue pixel region, the green pixel region, and the red pixel region, and then removing the Al layer, TiN layer, ITO layer, TiN layer, ITO layer, and ITO layer arranged in sequence from the bottom to the top by etching the third position other than the positions corresponding to the blue pixel region, the green pixel region, and the red pixel region, and then removing the remaining photoresist; (5) Filling a SiO layer above the substrate at positions other than the corresponding positions of the blue pixel region, the green pixel region, and the red pixel region of the structure obtained in step (4) to obtain the anode structure.

13. A micro organic light-emitting device comprising the anode structure according to any one of claims 1 to 8.

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