Silicone based resin composition, and semiconductor device comprising the same

Abstract

Disclosed are a silicone-based resin composition including an organic polysiloxane; and a conductive filler, wherein an area ratio, measured by Measurement method below, of the conductive filler is 30% or less; and a semiconductor device including the silicone-based resin composition.

Description

[0001] SILICONE BASED RESIN COMPOSITION, AND SEMICONDUCTOR DEVICE COMPRISING THE SAME

[0002] [Technical Field]

[0003] The present invention relates to a silicone-based resin composition and a semiconductor device including the same.

[0004] [Background Art]

[0005] Since most electronic components generate heat during use thereof, it is necessary to remove heat from the electronic components for the proper operation thereof. In particular, in integrated circuit elements such as CPUs used in personal computers, the amount of heat dissipated is increasing due to an increase in operating frequency, whereby countermeasures against heat have emerged as an important issue.

[0006] Accordingly, many methods of dissipating such heat have been proposed, and in electronic components dissipating a large amount of heat, a method of dissipating heat by interposing a thermally conductive material, such as thermally conductive grease or a thermally conductive sheet, between an electronic component and a member such as a heat sink has been proposed. Korean Patent Application Publication No. 10-2020-0086307 discloses a semiconductor device including a thermally conductive material.

[0007] However, a conductive filler contained in a thermally conductive material can improve the thermal conductivity of the thermally conductive material, but as the content of the conductive filler increases, mechanical properties deteriorate.

[0008] [Related Art Document]

[0009] [Patent Document]

[0010] (Patent Document 1) Korean Patent Application Publication No. 10-2020-0086307

[0011] [Disclosure] [Technical Problem]

[0012] Therefore, the present invention has been made in view of the above problems, and it is one object of the present invention to provide a silicone-based resin composition having excellent thermal conductivity and mechanical properties and a semiconductor device including the silicone-based resin composition.

[0013] [Technical Solution]

[0014] In accordance with an aspect of the present invention, the above and other objects can be accomplished by the provision of a silicone-based resin composition, including: an organic polysiloxane; and a conductive filler, wherein an area ratio, measured by Measurement method below, of the conductive filler is 30% or less:

[0015] [Measurement method]

[0016] 1) The silicone-based resin composition is molded by hot press under conditions of 165°C and a pressure of 26 kgf / cm2for 15 minutes to manufacture a sheet.

[0017] 2) The sheet is cured at 150°C for 2 hours to manufacture a sample of the sheet.

[0018] 3) After setting an arbitrary region on a surface of the sample, a ratio of a total area of the conductive filler in the arbitrary region to a total area of the arbitrary region is calculated using a scanning electron microscope (SEM).

[0019] In an embodiment of the present invention, the conductive filler may include a conductive powder including dendrite-type particles.

[0020] In an embodiment of the present invention, the conductive powder may have a tap density of 0.1 g / cm3to 3.0 g / cm3.

[0021] In an embodiment of the present invention, the conductive powder may have a specific surface area of 0.2 m2 / g to 5.0 m2 / g.

[0022] In an embodiment of the present invention, the sample of the sheet may have a lap shear strength of 0.5 N / mm2to 5.0 N / mm2measured according to DIN EN 1465.

[0023] In an embodiment of the present invention, the sample of the sheet may have a modulus of less than 100 MPa. In an embodiment of the present invention, the sample of the sheet may have a tensile strength of greater than 1.5 MPa.

[0024] In an embodiment of the present invention, the sample of the sheet may have a tensile strain of 60% to 200%.

[0025] In an embodiment of the present invention, in the silicone-based resin composition, a thermal conductivity per area ratio of a filler calculated according to Equation 1 below may be 3 W / mK or more:

[0026] [Equation 1]

[0027] X / Y x 10 where X denotes a thermal conductivity of the sample of the sheet measured at 25 °C, and Y denotes an area ratio of the conductive filler.

[0028] In accordance with another aspect of the present invention, there is provided a semiconductor device, including: a semiconductor package; a heat dissipation part disposed on the semiconductor package; and a heat conduction layer interposed between the semiconductor package and the heat dissipation part, wherein the heat conduction layer includes a silicone- based resin composition, wherein the silicone-based resin composition includes an organic polysiloxane and a conductive filler, and an area ratio, measured by Measurement method below, of the conductive filler is 30% or less:

[0029] [Measurement method]

[0030] 1) The silicone-based resin composition is molded by hot press under conditions of 165°C and a pressure of 26 kgf / cm2for 15 minutes to manufacture a sheet.

[0031] 2) The sheet is cured at 150°C for 2 hours to manufacture a sample of the sheet.

[0032] 3) After setting an arbitrary region on a surface of the sample, a ratio of a total area of the conductive filler in the arbitrary region to a total area of the arbitrary region is calculated using a scanning electron microscope (SEM).

[0033] [Advantageous effects]

[0034] Since a silicone-based resin composition of the present invention includes a conductive powder containing dendrite-type particles as a conductive filler, high thermal conductivity can be exhibited with only a low content of conductive filler.

[0035] In addition, since the present invention includes a conductive filler in a low content, the adhesion reliability of a silicone-based resin composition can be improved, compared to the case of containing a conductive filler in a high content.

[0036] Further, since the present invention includes a conductive filler in a low content, a modulus can be lowered and tensile strength and tensile strain can be increased, so that a product made of the silicone-based resin composition of the present invention can exhibit improved mechanical properties.

[0037] [Description of Drawings]

[0038] FIG. 1 sequentially illustrates a method of measuring the area ratio of a conductive filler according to the present invention.

[0039] FIG. 2 schematically illustrates a semiconductor device according to the present invention.

[0040] [Best mode]

[0041] Structural or functional descriptions of the embodiments disclosed in this specification or application are merely exemplified for the purpose of explaining embodiments according to the technical idea of the present invention, embodiments according to the technical idea of the present invention may be implemented in various forms other than the embodiments disclosed in this specification or application, and it is not to be construed that the technical idea of the present invention is limited to the embodiments described in this specification or application.

[0042] In addition, when a component is "included" or "comprised" in this specification or application, other components may be further included or comprised, rather than excluding other components, unless otherwise stated. In addition, it should be understood that all numerical ranges representing the physical property values, dimensions, etc. of components described in this specification or application are modified by the term "about" in all cases unless otherwise specified. Hereinafter, a silicone-based resin composition according to the present invention and a semiconductor device including the silicone-based resin composition are described.

[0043] <Silicone-based resin composition>

[0044] The silicone-based resin composition according to the present invention includes an organic poly siloxane and a conductive filler, and an area ratio of the conductive filler measured by the following measurement method is 30% or less:

[0045] [Measurement method]

[0046] 1) The silicone-based resin composition is molded by hot press under conditions of 165°C and a pressure of 26 kgf / cm2for 15 minutes to manufacture a sheet.

[0047] 2) The sheet is cured at 150°C for 2 hours to manufacture a sample of the sheet.

[0048] 3) After setting an arbitrary region on a surface of the sample, a ratio of a total area of the conductive filler in the arbitrary region to a total area of the arbitrary region is calculated using a scanning electron microscope (SEM).

[0049] The silicone-based resin composition includes an organic polysiloxane.

[0050] The organic poly siloxane may be represented by Formula 1 below:

[0051] [Formula 1]

[0052] RJaSiOb where R1represents one or two or more groups selected from the group consisting of a hydrogen atom, a hydroxyl group, and a saturated or unsaturated monovalent hydrocarbon group having 1 to 18 carbon atoms and a may be about 1.8 to about 2.2. a+b may be about 3.5 to about 8. a+b may be 4.

[0053] In Formula 1, the saturated or unsaturated monovalent hydrocarbon group having 1 to 18 carbon atoms represented by R1may be, for example, an alkyl group such as a methyl group, an ethyl group, a propyl group, a hexyl group, an octyl group, a decyl group, a dodecyl group, a tetradecyl group, a hexadecyl group, or an octadecyl group; a cycloalkyl group such as a cyclopentyl group or a cyclohexyl group; an alkenyl group such as a vinyl group or an allyl group; an aryl group such as a phenyl group or a tolyl group; an aralkyl group such as a 2- phenylethyl group or a 2-methyl-2-phenylethyl group; or a halogenated hydrocarbon group such as a 3,3,3-trifluoropropyl group, a 2-(perfluorobutyl)ethyl group, a 2-(perfluorooctyl)ethyl group, or a p-chlorophenyl group.

[0054] The organic polysiloxane may have a weight average molecular weight of about 40,000 g / mol to about 80,000 g / mol, about 30,000 g / mol to about 100,000 g / mol, about 500 g / mol to about 10,000 g / mol, about 700 g / mol to about 7,000 g / mol, about 1,000 g / mol to about 5,000 g / mol, or about 1,500 g / mol to about 3,000 g / mol. The weight average molecular weight may be measured based on polystyrene.

[0055] In the organic polysiloxane, a kinematic viscosity at 25°C may be 10 mm2 / s to 100,000 mm2 / s, 20,000 mm2 / s to 100,000 mm2 / s, or about 30 mm2 / s to about 10,000 mm2 / s. The kinematic viscosity of the organic polysiloxane may be a value at 25°C measured with an Ostwald viscometer.

[0056] When the organic polysiloxane has a weight average molecular weight and kinematic viscosity within the above ranges, proper bonding strength to an adherend may be maintained, and durability may be improved because voids and cracks due to thermal shock do not occur.

[0057] The organic polysiloxane may include a first organic polysiloxane.

[0058] The first organic polysiloxane includes an alkenyl group bonded to a silicon atom, and the number of the alkenyl groups present in one molecule of the first organic poly siloxane may be at least two, two to ten, two to five, or two.

[0059] The first organic poly siloxane may be represented by Formula 2 below:

[0060] [Formula 2]

[0061] R^R^SiOb where R1may be a hydrogen atom, a hydroxyl group, or a saturated or unsaturated monovalent hydrocarbon group having 1 to 18 carbon atoms, and R2may be an alkenyl group. In Formula 2, a+c may be about 1.8 to about 2.2, and a+b+c may be about 3.5 to about 8. In Formula 2, a+b+c may be about 4. In Formula 2, a may be about 1.8 to about 2.2. In addition, c may be 0.0001 to 0.1. The first organic poly siloxane may be represented by Formula 3 below:

[0062] [Formula 3] where R1may be a hydrogen atom, a hydroxyl group, or a saturated or unsaturated monovalent hydrocarbon group having 1 to 18 carbon atoms, R2may be an alkenyl group. In addition, in Formula 3, n may be 1 to 1,500, and m may be 0 to 20. In Formula 3, n may be 10 to 1,000, and m may be 0 to 20.

[0063] The first organic poly siloxane may be represented by Formula 4 below:

[0064] [Formula 4] where n may be 1 to 1,500. n may be 10 to 1,000.

[0065] The first organic polysiloxane may have a weight average molecular weight (Mw) of about 500 g / mol to about 10,000 g / mol, about 700 g / mol to about 7,000 g / mol, about 1,000 g / mol to about 5,000 g / mol, or about 1,500 g / mol to about 3,000 g / mol. The weight average molecular weight may be measured based on polystyrene.

[0066] In the first organic polysiloxane, a kinematic viscosity at 23°C may be 10 cPs to 100,000 cPs, 30 cPs to 50,000 cPs, or 10,000 cPs to 40,000 cPs. The kinematic viscosity of the first organic polysiloxane may be a value at 25°C measured with an Ostwald viscometer.

[0067] The organic polysiloxane may include a second organic polysiloxane.

[0068] The second organic polysiloxane may include a hydrogen group bonded to a silicon atom. The number of the hydrogen groups per molecule of the second organic poly siloxane may be 1 to 10, 2 to 10, 2 to 5, or 2.

[0069] The second organic poly siloxane may be represented by Formula 5 below: [Formula 5] where R1may be a hydrogen atom, a hydroxyl group, or a saturated or unsaturated monovalent hydrocarbon group having 1 to 18 carbon atoms, and R3may be a hydrogen atom. In addition, in Formula 5, n may be 1 to 1,500, and m may be 0 to 20. In Formula 5, n may be 10 to 1,000, and m may be 0 to 20. In Formula 5, n may be 1 to 1,500, and m may be 0.

[0070] The second organic poly siloxane may be represented by Formula 6 below:

[0071] [Formula 6] At about 23°C, the second organic polysiloxane may have a viscosity of about 500 cPs to about 5,000 cPs, about 500 cPs to about 3,000 cPs, or about 500 cPs to about 2,000 cPs.

[0072] The organic polysiloxane may further include a third organic polysiloxane. The third organic poly siloxane may be represented by Formula 7 below:

[0073] [Formula 7] where R1may be a hydrogen atom, a hydroxyl group, or a saturated or unsaturated monovalent hydrocarbon group having 1 to 18 carbon atoms, R3may be a hydrogen atom. In addition, in Formula 7, n may be 1 to 1,500 and m may be 1 to 500. In Formula 7, n may be 10 to 1,000 and m may be 1 to 100. The third organic poly siloxane may be represented by Formula 8 below:

[0074] [Formula 8] where n may be 1 to 1,500 and m may be 1 to 500. In Formula 8, n may be 10 to 1,000 and m may be 1 to 100.

[0075] At about 23°C, the third organic polysiloxane may have a viscosity of about 50 cPs to about 1,000 cPs, about 100 cPs to about 500 cPs, or about 100 cPs to about 500 cPs.

[0076] A ratio of the viscosity of the first organic poly siloxane to the viscosity of the second organic polysiloxane may be 10: 1 to 40: 1.

[0077] In addition, a ratio of the viscosity of the second organic poly siloxane to the viscosity of the third organic poly siloxane may be 2: 1 to 10: 1.

[0078] The content of the first organic poly siloxane may be about 60 parts by weight to about 90 parts by weight, about 70 parts by weight to about 85 parts by weight, or about 75 parts by weight to about 85 parts by weight based on 100 parts by weight of the total organic polysiloxane.

[0079] The content of the second organic poly siloxane may be about 10 parts by weight to about 40 parts by weight, about 10 parts by weight to about 30 parts by weight, or about 12 parts by weight to about 23 parts by weight based on 100 parts by weight of the first organic polysiloxane.

[0080] The content of the third organic poly siloxane may be about 3 parts by weight to about 20 parts by weight, about 3 parts by weight to about 15 parts by weight, or about 4 parts by weight to about 10 parts by weight based on 100 parts by weight of the first organic poly siloxane.

[0081] When the silicone-based resin composition includes the first organic polysiloxane, the second organic polysiloxane and the third organic polysiloxane within the above ranges, proper adhesion to an adherend may be maintained and the silicone-based resin composition may evenly spread during a coating process. The silicone-based resin composition includes a conductive filler.

[0082] The conductive filler may include a conductive powder including dendrite-type particles. The conductive powder may include the dendrite-type silver particles. The conductive powder may include surface-treated dendrite-type silver particles. The conductive powder may include dendrite-type silver particles coated with copper.

[0083] The conductive filler may further include a conductive powder including spherical particles having a shape different from the dendrite-type particles. The spherical particles may be surface-treated silver particles. The spherical particles may be silver particles coated with copper.

[0084] The conductive powder may have a tap density of 0.1 g / cm3to 0.3 g / cm3, 0.1 g / cm3to 0.2 g / cm30.1 g / cm3to 1.8 g / cm3;0.1 g / cm3to 1.6 g / cm3;0.2 g / cm3to 1.6 g / cm3;0.3 g / cm3to 1.6 g / cm3;or 0.4 g / cm3to 1.6 g / cm3.

[0085] To obtain the tap density, 100 g of silver powder is weighed and lightly dropped into a 100 ml measuring cylinder with a funnel, and then the measuring cylinder is placed on a tap density measuring device and the silver powder is compressed by dropping 600 times at a rate of 60 times / min from a fall distance of 20 mm. The tap density may be calculated from the volume of the compressed powder.

[0086] The conductive powder may have a specific surface area of 0.2 m2 / g to 5.0 m2 / g, 0.3 m2 / g to 5.0 m2 / g, 0.4 m2 / g to 5.0 m2 / g,0.5 m2 / g to 5.0 m2 / g, 0.7 m2 / g to 5.0 m2 / g, 0.9 m2 / g to 5.0 m2 / g, 1.0 m2 / g to 5.0 m2 / g, 1.2 m2 / g to 5.0 m2 / g, 1.4 m2 / g to 5.0 m2 / g, 1.4 m2 / g to 4.8 m2 / g, or 1.4 m2 / g to 4.5 m2 / g.

[0087] To obtain the specific surface area, about 2 g of silver powder is taken as a sample, and after degassing at 60±5°C for 10 minutes, a total surface area is measured with an automatic specific surface area measuring device (BET method). The amount of the sample is weighed and the specific surface area is calculated according to the following equation.

[0088] Specific surface area (m2 / g) = total surface area(m2) / sample amount(g)

[0089] An aspect ratio of the dendrite-type particles may be about 2 to 30, about 5 to 30, about 5 to 25, or about 5 to 20. The conductive powder may be surface-treated with a surface treatment agent. The surface treatment agent may include a CIO to C20 fatty acid. Examples of the fatty acid include capric acid, lauric acid, myristic acid, palmitic acid, stearic acid, arachidic acid, myristoleic acid, palmitolic acid, sapienic acid, oleic acid, elaidic acid, vaccenic acid, linoleic acid, linolelaidic acid, arachidonic acid, eicosapentaenoic acid, a-linolenic acid, and the like.

[0090] The conductive powder may have an ignition loss (Ig-loss) of less than about 0.8 wt%, less than about 0.7 wt%, or less than about 0.6 wt%. The ignition loss may be performed and measured for about 1 hour at about 538°C.

[0091] The surface of the conductive powder may be effectively treated even with a small amount of the surface treatment agent. That is, the conductive powder has a relatively low tap density and a large specific surface area, and may be surface-treated with a small amount of a surface treatment agent. Accordingly, the conductive powder may be uniformly dispersed in the organic poly siloxane and may improve thermal connection of the conductive filler. That is, since the conductive powder has improved dispersibility, the conductive powder may be added in a high content to the organic polysiloxane. In addition, since the conductive powder has a surface area such as a dendrite type and a layer thereof coated with the surface treatment agent is thin, contact characteristics between conductive fillers may be improved. Accordingly, the conductive powder may improve the thermal conductivity of the silicone-based resin composition.

[0092] The conductive powder may have an average particle diameter of about 0.5 JMH to about 4 / / m, about 1 JMH to about 3 / / m, or about 1.5 JMH to about 2.5 JMH.

[0093] The silicone-based resin composition may include the first silver powder in a content of about 300 parts by weight to about 1,000 parts by weight, about 400 parts by weight to about 900 parts by weight, or about 500 parts by weight to about 800 parts by weight based on 100 parts by weight of the organic poly siloxane.

[0094] The silicone-based resin composition may include the second silver powder in a content of about 100 parts by weight to about 800 parts by weight, about 150 parts by weight to about 700 parts by weight, or about 170 parts by weight to about 600 parts by weight based on 100 parts by weight of the organic poly siloxane.

[0095] The conductive filler may include the conductive powder including dendrite-type particles and the conductive powder including spherical particles in a weight ratio of 5:95 to 80:20, 5:95 to 60:40, or 5:95 to 50:50. In general, even in the same silicone-based resin composition, the distribution characteristics of the conductive filler included in the silicone- based resin composition are different. Accordingly, a significant difference in thermal conductivity characteristics of final products may occur depending on a pressing pressure during a product manufacturing process. Since the conductive filler includes a mixture of the conductive powder including dendrite-type particles and the conductive powder including spherical particles having a shape different from the dendrite-type particles, the formation of an electrical network between the particles may be improved, so that thermal conductivity may be improved. In addition, the silicone-based resin composition may exhibit high thermal conductivity even when the filler is included in a low content.

[0096] The silicone-based resin composition may include the organic polysiloxane and the conductive filler in a weight ratio of 20:80 to 5:95, 20:80 to 6:94, or 20:80 to 10:90. When the range is satisfied, proper adhesion to an adherend may be maintained, and durability may be improved because voids and cracks due to thermal shock do not occur.

[0097] In the silicone-based resin composition according to the present invention, an area ratio of the conductive filler measured by the following measurement method is 30% or less:

[0098] [Measurement method]

[0099] 1) The silicone-based resin composition is molded by hot press under conditions of 165°C and a pressure of 26 kgf / cm2for 15 minutes to manufacture a sheet.

[0100] 2) The sheet is cured at 150°C for 2 hours to manufacture a sample of the sheet.

[0101] 3) After setting an arbitrary region on a surface of the sample, a ratio of a total area of the conductive filler in the arbitrary region to a total area of the arbitrary region is calculated using a scanning electron microscope (SEM).

[0102] FIG. 1 sequentially illustrates a method of measuring an area ratio of the conductive filler.

[0103] Referring to FIG. 1, (a) a silicone-based resin composition 10 is fed into a mold 20, and then the silicone-based resin composition 10 is molded by hot press under conditions of 165 °C and a pressure of 26 kgf / cm2for 15 minutes to manufacture a sheet 11. Next, (b) the sheet 11 is cured at 150°C for 2 hours. The sheet 11 may be fed into the dry oven 30 and cured therein.

[0104] Next, (c) a sample 11-1 of the cured sheet is manufactured.

[0105] Next, (d) an arbitrary region A is set on a surface of the sample 11-1.

[0106] The arbitrary region A may be divided into a total area n of a conductive filler and a silicon-based resin area r excluding the total area n of the conductive filler. A ratio of the total area n of the conductive filler in the arbitrary region A relative to a total area m of the arbitrary region A is calculated using a scanning electron microscope (SEM).

[0107] In the silicone-based resin composition, the area ratio of the conductive filler measured by the measurement method may be 30% or less, 29% or less, 28% or less, 27% or less, or 25% or less.

[0108] Since the area ratio of the conductive filler in the silicone-based resin composition is within the above range, high thermal conductivity may be exhibited with only a low content of conductive filler. In addition, since the conductive filler is included in a low content, adhesion reliability of the silicone-based resin composition may be improved. In addition, as the content of silicone-based resin is relatively high, bonding force between binders included in the silicone- based resin composition may be improved so that a bonding network between the binders may be improved. Accordingly, the silicone-based resin composition may have increased tensile strength and tensile strain and lowered modulus, so that adhesion properties, thermal resistance, and mechanical properties may be improved.

[0109] The sample of the sheet may have a lap shear strength of 0.5 N / mm2to 5.0 N / mm2, 1.0 N / mm2to 5.0 N / mm2, 1.5 N / mm2to 5.0 N / mm2, 2.0 N / mm2to 5.0 N / mm22.0 N / mm2to 4.5 N / mm2, 2.5 N / mm2to 4.5 N / mm2, 2.5 N / mm2to 4.0 N / mm2, or 2.5 N / mm2to 3.5 N / mm2measured according to DIN EN 1465.

[0110] The sample of the sheet may have a modulus of less than 100 MPa, less than 90 MPa, less than 80 MPa, less than 70 MPa, less than 60 MPa, less than 50 MPa, less than 40 MPa, less than 30 MPa, less than 20 MPa, or 1 MPa or more and less than 20 MPa.

[0111] The sample of the sheet may have a tensile strength of greater than 1.5 MPa, greater than 1.6 MPa, greater than 1.7 MPa, greater than 1.8 MPa, greater than 1.9 MPa, greater than 2.0 MPa, or greater than 2.0 MPa and 10.0 MPa or less. The sample of the sheet may have a tensile strain of 60% to 200%, 60% to 180%, 60% to 160%, 60% to 150%, 60% to 120%, 60% to 210%, 60% to 100%, or 60% to 95%.

[0112] In the silicone-based resin composition, a thermal conductivity per area ratio of a filler calculated according to Equation 1 below may be 3 W / mK or more, 3.3 W / mK or more, 3.5 W / mK or more, or 3.7 W / mK or more:

[0113] [Equation 1]

[0114] X / Y x 10

[0115] (where X denotes a thermal conductivity of the sample of the sheet measured at 25°C, and Y denotes an area ratio of the conductive filler.)

[0116] Since the silicone-based resin composition has a thermal conductivity per area ratio of a filler of 3 W / mK or more calculated according to Equation 1, a relatively high thermal conductivity may be expressed even when the silicone resin composition includes a low content of conductive filler.

[0117] In the sample of the sheet, a thermal conductivity measured at 25°C may be 10 W / mK or more, 10.1 W / mK or more, 10.2 W / mK or more, 10.3 W / mK or more, or 10.5 W / mK or more.

[0118] When the sample of the sheet has a thermal conductivity within the above range, a product made of the silicone-based resin composition may perform an appropriate heat dissipation function.

[0119] The silicone-based resin composition may further include a tackifier.

[0120] The tackifier may include alkoxysilane. In addition, the tackifier may include an epoxy group. The tackifier may be at least one selected from the group consisting of 2 -(3 ,4 epoxy cyclohexyl) ethyltrimethoxy silane, 3-glycidoxypropyl methyldimethoxy silane, 3- glycidoxypropyl trimethoxy silane, 3-glycidoxypropyl methyldi ethoxy silane, and 3- glycidoxypropyl triethoxysilane.

[0121] The silicone-based resin composition may include the tackifier in a content of about 1 part by weight to about 20 parts by weight, about 1 part by weight to about 10 parts by weight, or about 2 parts by weight to about 8 parts by weight based on 100 parts by weight of the organic polysiloxane. The tackifier may improve adhesive strength between the organic polysiloxane and the conductive filler.

[0122] The silicone-based resin composition may further include a curing catalyst. The curing catalyst may accelerate curing of the silicone-based resin composition.

[0123] The curing catalyst may include a platinum-based catalyst.

[0124] Examples of the curing catalyst include organic titanate esters such as platinum- divinyltetramethyldisiloxane complex, tetrabutyl titanate, and tetraisopropyl titanate; organic titanium chelate compounds such as diisopropoxybis(acetylacetate)titanium and diisopropoxybis(ethylacetoacetate)titanium; organoaluminum compounds such as aluminum tris(acetylacetonate) and aluminum tri s(ethyl acetoacetate); organic zirconium compounds such as zirconium tetra(acetylacetonate) and zirconium tetrabutylate; organic tin compounds such as dibutyltin dioctoate, dibutyltin dilaurate, and butyltin-2-ethylhexoate; metal salts of organic carboxylic acids such as tin naphthenate, tin oleate, tin butyrate, cobalt naphthenate, and zinc stearate; amine compounds such as hexylamine and dodecylamine phosphate and salts thereof; quaternary ammonium salts such as benzyltriethylammonium acetate; lower fatty acid salts of alkali metals such as potassium acetate; dialkyl hydroxylamines such as dimethylhydroxylamine and diethylhydroxylamine; and guanidyl group-containing organosilicon compounds.

[0125] The silicone-based resin composition may include the curing catalyst in a content of about 0.01 parts by weight to about 5 parts by weight, about 0.03 parts by weight to about 3 parts by weight, or about 0.1 parts by weight to about 2 parts by weight based on 100 parts by weight of the organic poly siloxane.

[0126] The silicone-based resin composition may further include a reaction inhibitor. The reaction inhibitor may be at least one selected from the group consisting of acetylenic compounds such as 2-methyl-3-butyn-2-ol, 2-phenyl-3-butyn-2-ol, and 1-ethynyl-l- cyclohexanol; ene-yne compounds such as 3-methyl-3-penten-l-yne and 3,5-dimethyl-3-hexen- 1-yne; curing reaction inhibitors such as hydrazine-based compounds, phosphine-based compounds, and mercaptan-based compound; and the like.

[0127] The silicone-based resin composition may include the reaction inhibitor in a content of about 0.0001 parts by weight to about 10 parts by weight based on 100 parts by weight of the organic polysiloxane. <Method of preparing silicone-based resin composition>

[0128] A method of preparing the silicone-based resin composition may be a known preparation method, without being specifically limited.

[0129] For example, the silicone-based resin composition may be prepared by mixing the organic polysiloxane, the conductive filler, the tackifier, the curing catalyst, the curing reaction inhibitor, and the like for 30 minutes to 4 hours using a mixer such as Trimix, Twinmix, and a planetary mixer (all of which are manufactured by Inoue Seisakusho Co., Ltd., registered trademark); Ultramixer (manufactured by Mizuho Kogyo Co., Ltd., registered trademark); or Hibis Disper Mix (manufactured by Primix Co., Ltd., registered trademark). In the mixing process, a process temperature may be about 0°C to about 25°C.

[0130] < Semi conductor device>

[0131] FIG. 2 schematically illustrates a semiconductor device according to the present invention.

[0132] Referring to FIG. 2, the semiconductor device may include a circuit board 100, a semiconductor package 200, conductive bumps 300, a heat dissipation part 400 and a heat conduction layer 500.

[0133] The semiconductor device according to the present invention includes the semiconductor package 200, the heat dissipation part 400 disposed on the semiconductor package 200, and the heat conduction layer 500 interposed between the semiconductor package 200 and the heat dissipation part 400, wherein the heat conduction layer 500 includes a silicone-based resin composition, the silicone-based resin composition includes an organic polysiloxane and a conductive filler, and an area ratio of the conductive filler measured by the following measurement method is 30% or less:

[0134] [Measurement method]

[0135] 1) The silicone-based resin composition is molded by hot press under conditions of 165°C and a pressure of 26 kgf / cm2for 15 minutes to manufacture a sheet.

[0136] 2) The sheet is cured at 150°C for 2 hours to manufacture a sample of the sheet. 3) After setting an arbitrary region on a surface of the sample, a ratio of a total area of the conductive filler in the arbitrary region to a total area of the arbitrary region is calculated using a scanning electron microscope (SEM).

[0137] A specific method of measuring the area ratio of the conductive filler is as shown in FIG. 1.

[0138] Since the silicone-based resin composition has the area ratio of the conductive filler according to the measurement method, the heat conduction layer 500 including the silicone- based resin composition may exhibit high thermal conductivity even with a low content of conductive filler so that reliability of product performance may be secured. In addition, proper adhesion to the semiconductor package 200 and the heat dissipation part 400 may be maintained.

[0139] The circuit board 100 may support the semiconductor package 200, the conductive bumps 300, the heat dissipation part 400 and the heat conduction layer 500.

[0140] The circuit board 100 may include a circuit pattern. The circuit board 100 may include a plurality of circuit patterns disposed inside a flat body including an insulating and heat- resistant material and having a predetermined strength. In addition, the circuit board 100 may include a connection pad electrically connected to the circuit pattern and disposed on the body.

[0141] For example, the body of the circuit board 100 may include a thermosetting resin-based substrate such as an epoxy resin substrate or a polyimide substrate, a flat plate, or a flat plate attached with a heat-resistant organic film such as a liquid crystal polyester film or a polyamide film. The circuit pattern may be disposed inside the body in a pattern shape and may include power wiring for power supply, ground wiring, and signal wiring for signal transmission. Each wiring may be disposed to be separated from each other by a plurality of interlayer insulating films formed on upper and lower surfaces of the body.

[0142] The connection pad may be exposed to the outside from the upper surface of the body and may be connected to the circuit pattern. Therefore, an external connection body connected to the circuit board 100 may be electrically connected to an internal circuit pattern through the connection pad.

[0143] Various electronic components may be mounted on a connection pad included in the circuit board 100. That is, the circuit board 100 may be a system board on which electronic components including the semiconductor package 200 are mounted.

[0144] The semiconductor package 200 may be mounted on the circuit board 100. The semiconductor package 200 may be disposed on the circuit board 100. The semiconductor package 200 may be connected to the circuit board 100 through the conductive bumps 300.

[0145] The semiconductor package 200 may include a semiconductor chip including an integrated circuit, a semiconductor package substrate connected to the semiconductor chip, a conductive solder for connecting the semiconductor chip and the semiconductor package substrate, and a sealing part for sealing the semiconductor chip and the conductive solder. The sealing part may include a resin composition such as epoxy molding.

[0146] The semiconductor package 200 may be a memory device, a central processing unit, or the like.

[0147] The conductive bumps 300 may be disposed between the semiconductor package 200 and the circuit board 100. The conductive bumps 300 may electrically connect the semiconductor package 200 and the circuit board 100 to each other. The conductive bumps 300 may be electrically connected to the semiconductor package 200 and the connection pad.

[0148] The heat dissipation part 400 may be disposed on the semiconductor package 200. The heat dissipation part 400 may cover the semiconductor package 200. The heat dissipation part 400 may be bonded to the circuit board 100. The heat dissipation part 400 may cover a side surface of the semiconductor package 200.

[0149] The heat dissipation part 400 may include a conductor. The heat dissipation part 400 may include metal. The heat dissipation part 400 may be thermally connected to an external heat dissipation fin.

[0150] In addition, the heat dissipation part 400 may protect the semiconductor package 200 against external physical impact. The heat dissipation part 400 may protect the semiconductor package 200 against external electromagnetic waves. That is, the heat dissipation part 400 may block external electromagnetic waves.

[0151] The heat conduction layer 500 may be disposed between the semiconductor package 200 and the heat dissipation part 400. The heat conduction layer 500 may directly contact the semiconductor package 200 and the heat dissipation part 400. The heat conduction layer 500 may be in close contact between the semiconductor package 200 and the heat dissipation part 400.

[0152] The heat conduction layer 500 may be thermally connected to the semiconductor package 200 and the heat dissipation part 400. That is, the heat conduction layer 500 may transfer heat generated from the semiconductor package 200 to the heat dissipation part 400.

[0153] The thickness of the heat conduction layer 500 may be about 1 JMH to about 100 JMH, about 2 JMH to about 70 / ini, about 5 JMH to about 60 / mi, or about ! 0 JMH to about 40 JMH.

[0154] <Method of manufacturing semiconductor device >

[0155] A method of manufacturing the semiconductor device may be a known manufacturing method, without being specifically limited.

[0156] First, the semiconductor package 200 may be mounted on the circuit board 100 by the conductive bumps 300. Next, the silicone-based resin composition may be coated on the semiconductor package 200. Alternatively, the silicone-based resin composition may be coated on a lower surface of the heat dissipation part 400.

[0157] Next, the heat dissipation part 400 may cover the semiconductor package 200. Accordingly, the coated silicone-based resin composition may be in direct contact with the lower surface of the heat dissipation part 400 and the upper surface of the semiconductor package 200, and the curable silicone resin composition may be cured at about 80°C or more in a state in which a pressure of about 0.01 MPa or more is applied.

[0158] A pressure in the curing process may be about 0.01 MPa or more. The pressure in the curing process may be about 0.05 MPa to about 100 MPa. The pressure in the curing process may be about 0.1 MPa to about 100 MPa.

[0159] A temperature in the curing process may be about 110°C to about 300°C. The temperature in the curing process may be about 120°C to about 300°C. The temperature in the curing process may be about 140°C to about 300°C. A curing time in the curing process may be about 30 minutes to about 5 hours. The heat conduction layer 500 may be formed by the process.

[0160] Hereinafter, the present invention is described in more detail based on Examples and Comparative Examples. However, the following Examples and Comparative Examples are only examples for explaining the present invention in more detail, and the present invention is not limited by the following Examples and Comparative Examples.

[0161] Example

[0162] - Organic polysiloxane #1 : Compound represented by the above Formula 4 having a viscosity of 20,000 cPs at 23 °C and including a silicon-bonded alkenyl group

[0163] - Organic polysiloxane #2: Compound represented by the above Formula 6 having a viscosity of 1,000 cPs at 23 °C and including a structure in which hydrogen groups are bonded to both ends thereof

[0164] - Organic polysiloxane #3: Compound represented by the above Formula 8 having a viscosity of 1,000 cPs at 23 °C and including a structure in which a hydrogen group is bonded to a side chain thereof

[0165] - Conductive filler #1 : Silver powder having a tap density of about 0.7 g / cm3, a specific surface area of about 2.9 m2 / g, an average particle diameter (D50) of about 1.2 JMH, an aspect ratio of 12 (dendrite-type), and an Ig-loss of 0.4 % by weight at about 538°C

[0166] - Conductive filler #2: Silver powder having a tap density of about 1.5 g / cm3, a specific surface area of about 1.3 m2 / g, an average particle diameter (D50) of about 1.8 JMH, an aspect ratio of 11 (dendrite-type), and an Ig-loss of 0.3 % by weight at about 538°C and surface-treated with fatty acids

[0167] - Conductive filler #3: Silver powder having a tap density of about 6.4 g / cm3, a specific surface area of about 0.3 m2 / g, an average particle diameter (D50) of about 3 JMH, an aspect ratio of 1.5 (spherical), and an Ig-loss of 0.1 % by weight at about 538°C

[0168] - Tackifier: 3-glycididoxy propyltrimethoxy silane

[0169] - Curing catalyst: Platinum-divinyltetramethyldisiloxane complex

[0170] - Reaction inhibitor: 1-ethynyl-l -cyclohexanol

[0171] Examples 1 to 3 and Comparative Examples 1 and 2 A silicone-based resin composition was prepared by adding each composition shown in

[0172] Table 1 below to a planetary mixer and uniformly mixing at room temperature at a speed of about 40 rpm for 1 hour.

[0173] [Table 1]

[0174] Experimental Example

[0175] <Manufacture of sample s>

[0176] A sheet was manufactured by molding the silicone-based resin composition of each of Examples 1 to 3 and Comparative Examples 1 and 2 by hot press under conditions of 165°C and a pressure of 26 kgf / cm2for 15 minutes. Next, the sheet was cured at 150°C for 2 hours, and then manufactured into a sample having a width of 30 mm, a length of 30 mm, and a thickness of 4 mm.

[0177] Experimental Example 1 - Measurement of area ratio of conductive filler

[0178] An arbitrary region having an area of 1 mm in width and 1 mm in length on the surface of the sample manufactured in each of Examples 1 to 3 and Comparative Examples 1 to 2 was set. Next, the total area of the conductive filler in the arbitrary region was measured using a scanning electron microscope (SEM). Next, a ratio of the total area of the conductive filler, calculated using SEM, relative to the total area (1 x 1 mm2) of the arbitrary region was calculated. Results are shown in Table 2 below.

[0179] Experimental Example 2 - Measurement of thermal conductivity

[0180] The thermal conductivity of the sample manufactured in each of Examples 1 to 3 to Comparative Examples 1 and 2 was measured according to the ISO 22007-2 method at 25°C using a thermal conductivity analyzer (model name: TPS-2500S, manufacturer: Hot Disk AB). Results are shown in Table 2 below.

[0181] Experimental Example 3 - Measurement of mechanical properties

[0182] - Lap shear strength measurement: The sample manufactured in each of Examples 1 to 3 and Comparative Examples 1 and 2 was subjected to lap shear strength measurement using a tensile strength analyzer (manufacturer: ZwickRoell Gmbh) according to the DIN EN 1465 method. Results are shown in Table 2 below.

[0183] - Modulus measurement: The sample manufactured in each of Examples 1 to 3 and Comparative Examples 1 and 2 was subjected to 100% modulus measurement according to DIN EN 53504-S1. Results are shown in Table 2 below.

[0184] - Tensile strength and tensile strain measurement: The sample manufactured in each of Examples 1 to 3 and Comparative Examples 1 and 2 was subjected to tensile strength and tensile strain measurement according to DIN EN 53504-S1. Results are shown in Table 2 below.

[0185] [Table 2]

[0186] Referring to Tables 1 to 3, it was confirmed that Examples 1 to 3 including a low content of conductive filler exhibited the same level of thermal conductivity as Comparative Examples 1 and 2. Specifically, it was confirmed that Comparative Examples 1 and 2 in which the area ratio of the conductive filler exceeded 30% only exhibited the same level of thermal conductivity as Comparative Examples 1 to 3, but rather, adhesion reliability was decreased with increasing conductive filler content. In addition, it was confirmed that Comparative Examples 1 and 2 exhibited an increased modulus, compared to Examples 1 to 3, but mechanical properties deteriorated with decreasing tensile strength and tensile strain

[0187] [Description of Symbols]

[0188] 10: silicone-based resin composition

[0189] 11 : sheet 11-1 : sample of sheet

[0190] 20: mold

[0191] 30: dry oven

[0192] 100: circuit board 200: semiconductor package

[0193] 300: conductive bump

[0194] 400: heat dissipation part

[0195] 500: heat conduction layer

Claims

[CLAIMS]

1. A silicone-based resin composition, comprising: an organic polysiloxane; and a conductive filler, wherein an area ratio, measured by Measurement method below, of the conductive filler is 30% or less:[Measurement method]1) The silicone-based resin composition is molded by hot press under conditions of 165°C and a pressure of 26 kgf / cm2for 15 minutes to manufacture a sheet.2) The sheet is cured at 150°C for 2 hours to manufacture a sample of the sheet.3) After setting an arbitrary region on a surface of the sample, a ratio of a total area of the conductive filler in the arbitrary region to a total area of the arbitrary region is calculated using a scanning electron microscope (SEM).

2. The silicone-based resin composition according to claim 1, wherein the conductive filler comprises a conductive powder comprising dendrite-type particles.

3. The silicone-based resin composition according to claim 2, wherein the conductive powder has a tap density of 0.1 g / cm3to 3.0 g / cm3.

4. The silicone-based resin composition according to claim 2, wherein the conductivepowder has a specific surface area of 0.2 m2 / g to 5.0 m2 / g.

5. The silicone-based resin composition according to claim 1, wherein the sample of the sheet has a lap shear strength of 0.5 N / mm2to 5.0 N / mm2measured according to DIN EN 1465.

6. The silicone-based resin composition according to claim 1, wherein the sample of the sheet has a modulus of less than 100 MPa.

7. The silicone-based resin composition according to claim 1, wherein the sample of the sheet has a tensile strength of greater than 1.5 MPa.

8. The silicone-based resin composition according to claim 1, wherein the sample of the sheet has a tensile strain of 60% to 200%.

9. The silicone-based resin composition according to claim 1, wherein, in the silicone- based resin composition, a thermal conductivity per area ratio of a filler calculated according to Equation 1 below is 3 W / mK or more:[Equation 1]X / Y x 10 where X denotes a thermal conductivity of the sample of the sheet measured at 25 °C, and Y denotes an area ratio of the conductive filler.

10. A semiconductor device, comprising: a semiconductor package; a heat dissipation part disposed on the semiconductor package; and a heat conduction layer interposed between the semiconductor package and the heat dissipation part, wherein the heat conduction layer comprises a silicone-based resin composition, wherein the silicone-based resin composition comprises an organic polysiloxane and a conductive filler, and an area ratio, measured by Measurement method below, of the conductive filler is 30% or less:[Measurement method]1) The silicone-based resin composition is molded by hot press under conditions of 165°C and a pressure of 26 kgf / cm2for 15 minutes to manufacture a sheet.2) The sheet is cured at 150°C for 2 hours to manufacture a sample of the sheet.3) After setting an arbitrary region on a surface of the sample, a ratio of a total area of the conductive filler in the arbitrary region to a total area of the arbitrary region is calculated using a scanning electron microscope (SEM).

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