Optoelectronic component

Abstract

An optoelectronic component (1, 2, 3, 4, 5, 6, 7) has an optoelectronic assembly (13) with a housing (12) and an optoelectronic semiconductor chip (8) embedded in the housing (12). The optoelectronic semiconductor chip (8) is designed to emit electromagnetic radiation. At least one first radiation emission surface (9) of the optoelectronic semiconductor chip (8) is not covered by a material of the housing (12), and the housing (12) is at least partly black.

Description

[0001] OPTOELECTRONIC COMPONENT

[0002] DESCRIPTION

[0003] The present invention relates to an optoelectronic component.

[0004] This patent application claims priority from German patent application 10 2024 105 959 . 1 , the disclosure of which is hereby incorporated by reference.

[0005] The problem of lateral emission of electromagnetic radiation from light-emitting diodes (LEDs) is known from the prior art. This lateral emission leads to optical crosstalk with neighboring, switched-off LEDs and thus to poor contrast in display devices.

[0006] In certain applications, LEDs, which use a phosphor to convert the wavelength of the originally emitted electromagnetic radiation, appear yellowish or white when switched off, or at least relatively bright. However, in some applications, such as display devices in motor vehicles, the lowest possible visibility when switched off is required.

[0007] An object of the present invention is to provide an improved optoelectronic component. This object is achieved by an optoelectronic component having the features of the independent claim. Advantageous further developments are specified in the dependent claims.

[0008] An optoelectronic component comprises an optoelectronic arrangement with a housing and an optoelectronic semiconductor chip embedded in the housing. The optoelectronic semiconductor chip is designed to emit electromagnetic radiation. At least a first radiation-emitting surface of the optoelectronic semiconductor chip is not covered by a material of the housing. The housing is at least partially black.

[0009] The optoelectronic semiconductor chip can be designed, for example, as a light-emitting diode. The optoelectronic semiconductor chip has a top side, a bottom side opposite the top side, and side surfaces, and is designed to emit electromagnetic radiation at the top side and at the side surfaces. The top side forms the first radiation-emitting surface, while the side surfaces form second radiation-emitting surfaces. Laterally directed emission leads to reduced contrast in components according to the prior art. This problem particularly affects small light-emitting diodes, which can be referred to as mini- or micro-LEDs.

[0010] One idea underlying the optoelectronic component is to embed the semiconductor chip in the black housing. The fact that the housing is black means that the housing material is essentially absorbent in the visible spectrum of electromagnetic radiation. The housing comprises a plastic, such as silicone. To achieve the blackening of the housing, absorbing particles, such as carbon, can be embedded in the plastic. The housing material can also be blackened in another way. The optoelectronic semiconductor chip is embedded in the housing in such a way that only its side surfaces are covered by the housing material. The top side, however, is uncovered.

[0011] By embedding the optoelectronic semiconductor chip in the black housing material, lateral emission of electromagnetic radiation is greatly reduced. The optoelectronic semiconductor chip advantageously appears darker when switched off than a prior art optoelectronic semiconductor chip. Furthermore, by embedding the optoelectronic semiconductor chip, electromagnetic radiation incident from the outside is absorbed, thereby significantly improving the impression of black when switched off. In addition, the occurrence of so-called phantom light can be prevented. Phantom light occurs when the optoelectronic component is illuminated and, due to increased reflection of external light by the optoelectronic component, merely gives the impression of emitting a light signal.The improved black impression allows for better differentiation between active and inactive symbols in high ambient brightness. Furthermore, the optical density of external cover elements can be reduced due to the improved black impression, thereby improving the overall efficiency of the optoelectronic component.

[0012] In one embodiment, the optoelectronic arrangement comprises a privacy filter. The privacy filter is arranged on the first radiation emission surface. The privacy filter has slats running in a direction perpendicular to the first radiation emission surface. The slats can, for example, extend completely through the privacy filter to the first radiation emission surface. The slats of the privacy filter can promote an intensified emission of electromagnetic radiation perpendicular to the first radiation emission surface. The angle-dependent radiation characteristic can be influenced by a width, a spacing, and a depth of the slats of the privacy filter. The privacy filter can, for example, be designed in the form of a structured dielectric material, wherein the slats can be produced by structuring.At the same time, light incident on the optoelectronic semiconductor chip from the side is dampened by the privacy filter, which also improves the black impression.

[0013] In one embodiment, the optoelectronic arrangement comprises a black layer. The black layer is arranged on the first radiation-emitting surface. This advantageously improves the black impression in the off state of the optoelectronic semiconductor chip. The black layer can also comprise, for example, a black or blackened plastic.

[0014] In one embodiment, the optoelectronic arrangement comprises a wavelength-converting material. The wavelength-converting material is arranged on the first radiation-emitting surface. The wavelength-converting material can, for example, comprise a matrix material, such as silicone, and at least one phosphor. The phosphor can, for example, be in the form of particles embedded in the matrix material. Alternatively, the wavelength-converting material can comprise a ceramic phosphor. In any case, the wavelength-converting material or the phosphor is designed to absorb electromagnetic radiation emitted by the optoelectronic semiconductor chip and, as a result of energy relaxation, to emit electromagnetic radiation of lower energy, i.e., to convert it. Overall, a mixture of the originally emitted radiation and the converted radiation is emitted.This allows the color impression of the optoelectronic semiconductor chip to be modified. For example, an optoelectronic semiconductor chip can be configured to emit blue light, while the wavelength-converting material is configured to absorb the blue light and emit yellow light, so that overall white light is emitted.

[0015] In one embodiment, the wavelength-converting material is arranged on the first radiation-emitting surface, and the privacy filter or the black layer is arranged on a side of the wavelength-converting material facing away from the first radiation-emitting surface. In one embodiment, the wavelength-converting material is arranged between the slats of the privacy filter. Previously known optoelectronic components which comprise a wavelength-converting material have the disadvantage that they favor laterally directed emission parallel to the first radiation-emitting surface and that they appear bright when switched off. Advantageously, the wavelength-converting property is combined with the modification of the angle-dependent radiation characteristic by means of the privacy filter or the modification of the impression of black by means of the black layer.Due to the arrangement of the wavelength-converting material in the slats of the privacy filter, the optoelectronic component is thinner than if it were arranged one above the other or on top of the other.

[0016] In one embodiment, the housing has an inner housing part and an outer housing part. The optoelectronic semiconductor chip is embedded in the inner housing part. The inner housing part is embedded in the outer housing part. The inner housing part is white and the outer housing part is black. Advantageously, the inner housing part forms a reflector, since the side surfaces of the optoelectronic semiconductor chip are covered by the inner, white housing part. The top side of the optoelectronic semiconductor chip, i.e. the first radiation emission surface, is uncovered by the inner and outer housing parts. The inner housing part and the outer housing part can, for example, comprise a plastic. While the outer housing part comprises, for example, carbon particles, the inner housing part comprises, for example, titanium dioxide or silicon dioxide particles that are embedded in the plastic as volume scatterers.This additionally suppresses laterally directed emission parallel to the first radiation emission surface.

[0017] In one embodiment, at least one waveguide structure is embedded in the housing. The waveguide structure is designed to guide electromagnetic radiation emitted by the optoelectronic semiconductor chip parallel to the first radiation emission surface at a predeterminable angle with respect to the first radiation emission surface. Advantageously, this additionally suppresses laterally directed emission, while promoting emission perpendicular to the first radiation emission surface. For example, the waveguide structure can be arranged inclined at an angle of 45° with respect to the first radiation emission surface, whereby electromagnetic radiation can be guided at this angle. If a plurality of waveguide structures are embedded in the housing, they are arranged parallel to one another.

[0018] In one embodiment, the optoelectronic component has a plurality of optoelectronic arrangements according to one of the embodiments. The optoelectronic arrangements are arranged laterally next to one another on a mounting surface of a carrier. The optoelectronic arrangements are embedded in a potting material arranged on the mounting surface. The optoelectronic component can be designed, for example, as a display device, for example an operating element or a plastic trim part in an automobile. However, the optoelectronic component can be designed as any desired display device that can be used, for example, in industry and the medical field. Crosstalk between adjacent optoelectronic arrangements is advantageously reduced by the provision of the at least partially black housing, since lateral emission is suppressed.This increases the contrast in the application. The improved contrast of the optoelectronic component significantly improves the recognizability of symbols, for example.

[0019] In one embodiment, the carrier is black. Advantageously, the contrast is further increased if the optoelectronic arrangements are arranged on a black carrier. In one embodiment, a cover is arranged on a potting surface of the potting material. The cover is transparent to promote light extraction. The cover also protects the optoelectronic component.

[0020] In one embodiment, the cover is designed as an additional privacy filter. The additional privacy filter has additional slats running in a direction perpendicular to the mounting surface of the carrier. The additional privacy filter can also be referred to as a privacy foil and enables additional, perpendicular to the mounting surface and the first radiation emission surfaces of the optoelectronic semiconductor chips of the optoelectronic arrangements as a whole.

[0021] The above-described properties, features, and advantages of this invention, as well as the manner in which they are achieved, will become clearer and more readily understood in connection with the following description of the embodiments, which are explained in more detail in connection with the drawings.

[0022] Fig. 1: an optoelectronic component according to a first embodiment in a side sectional view;

[0023] Fig. 2: an optoelectronic component according to a second embodiment in a side sectional view;

[0024] Fig. 3: an optoelectronic component according to a third embodiment in a side sectional view;

[0025] Fig. 4: an optoelectronic component according to a fourth embodiment in a side sectional view;

[0026] Fig. 5: an optoelectronic component according to a fifth embodiment in a side sectional view; Fig. 6: an optoelectronic component according to a sixth embodiment in a side sectional view; and

[0027] Fig. 7: an optoelectronic component according to a seventh embodiment in a side sectional view.

[0028] Fig. 1 shows schematically an optoelectronic component 1 according to a first embodiment in a side sectional view.

[0029] The optoelectronic component 1 has an optoelectronic semiconductor chip 8. The optoelectronic semiconductor chip 8 is designed, for example, as a light-emitting diode. The optoelectronic semiconductor chip 8 has a top side 9, a bottom side 10 opposite the top side 9, and side surfaces 11. The optoelectronic semiconductor chip 8 is designed to emit electromagnetic radiation at its top side 9 and at its side surfaces 11. For this reason, the top side 9 can also be referred to as the first radiation emission surface 9, while the side surfaces 11 can be referred to as the second side surfaces 11. Since the optoelectronic semiconductor chip 8 can have any desired shape in its cross section parallel to the top side 9 and can, for example, be designed in the shape of a circular disk, the optoelectronic semiconductor chip 8 can have only a second radiation emission surface 11.

[0030] Laterally directed emission, i.e., emission at at least one second radiation-emitting surface 11, causes a deterioration in contrast in previously known optoelectronic components. The optoelectronic component 1 according to Fig. 1 is based on the idea of ​​suppressing laterally directed emission parallel to the first radiation-emitting surface 9.

[0031] For this purpose, the optoelectronic component 1 has a housing 12. The optoelectronic semiconductor chip 8 is embedded in the housing 12. The housing 12 comprises, for example, silicone, but it may also comprise another plastic. The optoelectronic semiconductor chip 8 can be embedded in the housing 12, for example, by means of a molding process.

[0032] The optoelectronic semiconductor chip 8 is embedded in the housing 12 in such a way that the first radiation emission surface 9 is uncovered by the housing 12 or by the housing material. The second radiation emission surfaces 11, in contrast, are covered by the housing 12. The housing 12 therefore rests against the side surfaces 11 of the optoelectronic semiconductor chip 8 and laterally surrounds the optoelectronic semiconductor chip 8. The underside 10 of the optoelectronic semiconductor chip 8 is, for example, uncovered. However, the housing 12 can also cover the underside 10 of the optoelectronic semiconductor chip 8; for example, the housing 12 can only partially cover the underside 10 and have through openings or electrical feedthroughs for electrical contacts of the optoelectronic semiconductor chip 8 formed on the underside 10. However, the optoelectronic semiconductor chip 8 can also be electrically contacted in a different way.

[0033] In order to suppress laterally directed emission of electromagnetic radiation, the housing 12 is black, i.e. the housing material is predominantly absorbent in the visible spectrum of electromagnetic radiation. The housing 12 can, for example, comprise a black plastic or black particles embedded in a plastic. For example, carbon particles embedded in silicone can cause the silicone to become black. Because the housing 12 is black, laterally emitted electromagnetic radiation is predominantly absorbed, whereby a contrast between emitting and non-emitting regions of the optoelectronic component 1 in a plane parallel to the first radiation emission surface 9 is improved. In addition, the impression of black is increased when the optoelectronic semiconductor chip 8 is switched off.In this case, there is also an improvement in contrast, but the contrast refers to a difference between a switched-off state of the optoelectronic semiconductor chip 8 and an operating state in which electromagnetic radiation is emitted.

[0034] The optoelectronic semiconductor chip 8 and the housing 12 form an optoelectronic arrangement 13. In the optoelectronic component 1 according to the first embodiment, the optoelectronic arrangement 13 also comprises a wavelength-converting material 14 and a privacy filter 15.

[0035] The wavelength-converting material 14 is arranged on the first radiation-emitting surface 9 and is designed to absorb electromagnetic radiation emitted at the first radiation-emitting surface 9 and to emit electromagnetic radiation of lower energy, i.e. of higher wavelength. Overall, this emits electromagnetic radiation which has spectral components of the radiation emitted at the first radiation-emitting surface 9 and components of the converted radiation. This can influence a color locus of light emitted by the optoelectronic component 1. The wavelength-converting material 14 can, for example, comprise at least one phosphor which is embedded in a plastic, for example in silicone. Alternatively, the wavelength-converting material 14 can comprise a ceramic phosphor.

[0036] The privacy filter 15 is also arranged on the first radiation emission surface 9, wherein the wavelength-converting material 14 is arranged on the first radiation emission surface 9 and the privacy filter 15 is arranged on a side of the wavelength-converting material 14 facing away from the optoelectronic semiconductor chip 8. The fact that the wavelength-converting material 14 is arranged on the first radiation emission surface 9 means that it is in direct and immediate mechanical contact with the first radiation emission surface 9, while the privacy filter 15 is arranged only on the first radiation emission surface 9, ie that the privacy filter 15 is arranged above the first radiation emission surface 9. Since the privacy filter 15 is arranged on the wavelength-converting material 14, the privacy filter 15 is in direct and immediate mechanical contact with the wavelength-converting material 14.The wavelength-converting material 14 is thus arranged between the first radiation emission surface 9 and the privacy filter 15.

[0037] The privacy filter 15 has slats 16 extending in a direction perpendicular to the first radiation-emitting surface 9. Electromagnetic radiation emitted essentially perpendicular to the first radiation-emitting surface 9 always has a certain component parallel to the first radiation-emitting surface 9, since angle-dependent radiation actually occurs and a radiation lobe is emitted. The slats 16 of the privacy filter 15 suppress emission perpendicular to the direction of extension of the slats 16, i.e., parallel to the first radiation-emitting surface 9. This additionally suppresses laterally directed emission.

[0038] The housing 12 is designed, for example, such that it is flush with the top side 9 and the bottom side 10. The wavelength-converting material 14 and the privacy filter 15 are arranged above the housing 12 with respect to the first radiation-emitting surface 9, with the wavelength-converting material 14 resting against an upper edge of the housing 12 and against the first radiation-emitting surface 9.

[0039] However, it is not absolutely necessary for the housing 12 to be flush with the first radiation-emitting surface 9. For example, the housing 12 can protrude beyond the top side 9 and / or the bottom side 10. If the housing 12 protrudes beyond the top side 9 or the first radiation-emitting surface 9, the housing 12 and the optoelectronic semiconductor chip 8 enclose a cavity. The wavelength-converting material 14 and the privacy filter 15 can be arranged in the cavity, in contrast to the illustration in Fig. 1.

[0040] Fig. 2 schematically shows an optoelectronic component 2 according to a second embodiment in a side sectional view. The optoelectronic component 2 according to Fig. 2 has similarities to the optoelectronic component according to Fig. 1. In the following, only the differences from the optoelectronic component according to Fig. 1 are explained. The reference numerals are retained for similar or identical elements.

[0041] The optoelectronic component 2 according to Fig. 2 does not have a privacy filter 15. Instead, the optoelectronic arrangement comprises a black layer 17 which is arranged on the first radiation emission surface 9, wherein the wavelength-converting material 14 is arranged on the first radiation emission surface 9 and the black layer 17 is arranged on the side of the wavelength-converting material 14 facing away from the optoelectronic semiconductor chip 8. The fact that the wavelength-converting material 14 is arranged on the first radiation emission surface 9 means that it is in direct and immediate mechanical contact with the first radiation emission surface 9, while the black layer 17 is arranged only on the first radiation emission surface 9, i.e. that the black layer 17 is arranged above the first radiation emission surface 9.Since the black layer 17 is arranged on the wavelength-converting material 14, the black layer 17 is in direct and immediate mechanical contact with the wavelength-converting material 14. The wavelength-converting material 14 is therefore arranged between the first radiation-emitting surface 9 and the black layer 17. The wavelength-converting material 14 and the privacy filter 15 can each be omitted. If no wavelength-converting material 14 is provided, the privacy filter 15 is arranged directly on the first radiation-emitting surface 9 and is in direct mechanical contact with it.

[0042] The black layer 17 is designed to be predominantly absorbent in the visible spectrum of electromagnetic radiation. The black layer 17 can, for example, comprise a black plastic or black particles embedded in a plastic. The black layer 17 improves the black impression of the optoelectronic component 2 in a switched-off state. The black layer 17 can also be arranged in a cavity enclosed by the housing 12 and the optoelectronic semiconductor chip 8. The black layer 17 can also be omitted. The wavelength-converting material 14 can also be omitted. If no wavelength-converting material 14 is provided, the black layer 17 is arranged directly on the first radiation-emitting surface 9 and is in direct mechanical contact with the latter.

[0043] Fig. 3 schematically shows an optoelectronic component 3 according to a third embodiment in a side sectional view. The optoelectronic component 3 according to Fig. 3 has similarities to the optoelectronic component according to Fig. 2. In the following, only the differences from the optoelectronic component according to Fig. 2 are explained. The reference numerals are retained for similar or identical elements.

[0044] The housing 12 of the optoelectronic component 2 in Fig. 2 is, for example, completely black. In contrast, the housing 12 of the optoelectronic component 3 in Fig. 3 has an inner housing part 18 and an outer housing part 19. The optoelectronic semiconductor chip 8 is embedded in the inner housing part 18. The inner housing part 18 is embedded in the outer housing part 19. The inner housing part 18 is white and the outer housing part 19 is black. As a result, the housing 12 is only partially black. The inner housing part 18 can, for example, have a white plastic or scattering particles embedded in a plastic, such as titanium dioxide particles embedded in silicone, which are particularly efficient volume scatterers. As a result, the inner housing part 18 is designed as a reflector in which the optoelectronic semiconductor chip 8 is embedded.Laterally directed emission is significantly reduced by the white inner housing part 18. The outer housing part 19, however, is also intended to absorb externally incident light, thereby improving the black impression in the off state. The optoelectronic component 1 according to Fig. 1 can also have a housing 12 according to Fig. 3 with an inner and an outer housing part 18, 19.

[0045] Fig. 4 schematically shows an optoelectronic component 4 according to a fourth embodiment in a side sectional view. The optoelectronic component 4 according to Fig. 4 has similarities to the optoelectronic component according to Fig. 3. In the following, only the differences from the optoelectronic component according to Fig. 3 are explained. The reference numerals are retained for similar or identical elements.

[0046] In the optoelectronic component 4 according to Fig. 4, waveguide structures 20 are embedded in the housing 12. The waveguide structures 20 are designed to guide electromagnetic radiation emitted by the optoelectronic semiconductor chip 8 parallel to the first radiation emission surface 9 at a predeterminable angle with respect to the first radiation emission surface 9. By way of example, the waveguide structures 20 are arranged at an angle of 45° with respect to the first radiation emission surface 9. As a result, electromagnetic radiation emitted laterally is emitted at an angle of 45° from the optoelectronic semiconductor chip 8. Merely as an example, the optoelectronic component 4 according to Fig. 4 has a plurality of waveguide structures 20 arranged one above the other. However, it may also be sufficient to provide one waveguide structure 20.

[0047] Fig. 5 schematically shows an optoelectronic component 5 according to a fifth embodiment in a side sectional view. The optoelectronic component 5 according to Fig. 5 has similarities to the optoelectronic component according to Fig. 1. In the following, only the differences from the optoelectronic component according to Fig. 1 are explained. The reference numerals are retained for similar or identical elements.

[0048] The optoelectronic component 5 according to Fig. 5 differs from the optoelectronic component 1 of Fig. 1 in that the wavelength-converting material 14 is arranged between the slats 16 of the privacy filter 15. The privacy filter 15 as such has recesses which are formed between the slats 16 and define the slats. The wavelength-converting material 14 is therefore arranged in the recesses and between the slats. In this case too, the wavelength-converting material 14 is arranged on the first radiation-emitting surface 9; more precisely, the wavelength-converting material 14 is arranged in the region of the slats 16 on the first radiation-emitting surface 9 and is in direct mechanical contact therewith.This makes it possible to set a color location of emitted electromagnetic radiation as a function of the angle, for example by selecting a distance between the slats 16 that is parallel to the first radiation emission surface 9 and a width of the slats 16 that is also parallel to the first radiation emission surface 9 as required.

[0049] Fig. 6 shows schematically an optoelectronic component 6 according to a sixth embodiment in a lateral sectional view.

[0050] The optoelectronic component 6 according to Fig. 6 has a plurality of optoelectronic arrangements 13 which are arranged laterally next to one another on a mounting surface 21 of a carrier 22. By way of example, a total of three optoelectronic arrangements 13 according to Fig. 2 are arranged on the mounting surface 21 of the carrier 22. However, any desired number of optoelectronic arrangements 13 can be arranged on the mounting surface 21. Instead of the optoelectronic arrangements 13 according to Fig. 2, optoelectronic components 1, 3, 4, 5 according to one of Figs. 1, 3, 4 and 5 can also be arranged on the mounting surface 21.

[0051] The optoelectronic arrangements 13 are arranged on the mounting surface 21 of the carrier 22 in such a way that the undersides 10 of the optoelectronic arrangements 13 face the mounting surface 21. At least one further layer 23 can also be arranged between the mounting surface 21 and the optoelectronic arrangements 13, as shown by way of example in Fig. 6. The further layer 23 can fulfill different functions. For example, the further layer 23 can comprise a dielectric material and be provided for electrical insulation. The further layer 23 can also be omitted.

[0052] The carrier 22 can, for example, be designed as a printed circuit board (PCB for short). Alternatively, the carrier 22 can be designed as a flexible film. The carrier 22 can therefore generally comprise any desired material. In particular, the carrier 22 can be black or comprise a black material. As a result, external light which strikes the carrier 22 is absorbed and the lateral contrast and the impression of black in the switched-off state of the optoelectronic component 6 are additionally improved. However, the carrier 22 does not necessarily have to be black. The at least partially black housings 12 of the optoelectronic arrangements 13 have the effect of suppressing optical crosstalk between adjacent optoelectronic arrangements 13. In addition, a potting material 24 is arranged on the mounting surface 21. The potting material 24 comprises, for example, silicone or another plastic.The optoelectronic arrangements 13 are embedded in the potting material 24. The potting material 24 completely embeds the optoelectronic arrangements. The potting material 24 has a potting surface 25 formed above the optoelectronic arrangements 13 with respect to the mounting surface 21 of the carrier 22. A transparent cover 26 is arranged on the potting surface 25 of the potting material 24. However, the cover 26 can also be omitted.

[0053] Fig. 7 schematically shows an optoelectronic component 7 according to a seventh embodiment in a side sectional view. The optoelectronic component 7 according to Fig. 7 has similarities to the optoelectronic component according to Fig. 6. In the following, only the differences from the optoelectronic component according to Fig. 6 are explained. The reference symbols are retained for similar or identical elements.

[0054] In contrast to the optoelectronic component 6 according to Fig. 6, the cover 26 in the optoelectronic component 7 according to Fig. 7 is designed as a further privacy filter 27. This means that the further privacy filter 27 has further slats 28 running in a direction perpendicular to the mounting surface 21 of the carrier 22. The further slats 28 can, for example, extend completely through the cover 26 or the further privacy filter 27 up to the potting surface 25 of the potting material 24. The further privacy filter 27 is provided to additionally suppress a component of electromagnetic radiation parallel to the mounting surface 21 of the carrier 22, which component is emitted by the optoelectronic arrangements 13. The angle-dependent radiation characteristic can be further modified by adjusting the distance and width of the additional slats 28, also with regard to an angle-dependent color distribution.The invention has been illustrated and described in more detail using preferred embodiments. However, the invention is not limited to the disclosed examples. Rather, other variations may be derived therefrom by those skilled in the art without departing from the scope of the invention.

[0055] LIST OF REFERENCE SYMBOLS optoelectronic component according to the first embodiment optoelectronic component according to the second embodiment optoelectronic component according to the third embodiment optoelectronic component according to the fourth embodiment optoelectronic component according to the fifth embodiment optoelectronic component according to the sixth embodiment optoelectronic component according to the seventh embodiment optoelectronic semiconductor chip top side / first radiation emission surface of the optoelectronic semiconductor chip bottom side of the optoelectronic semiconductor chip side surfaces / second radiation emission surface of the optoelectronic semiconductor chip housing optoelectronic arrangement wavelength converting material privacy filter lamellae of the privacy filter black layer inner housing part outer housing part waveguide structure mounting surface carrier further layer encapsulation material encapsulation surfaceArea Cover 27 Additional privacy filter

[0056] 28 Additional slats of the additional privacy filter

Claims

PATENT CLAIMS 1. Optoelectronic component (1, 2, 3, 4, 5, 6, 7) comprising an optoelectronic arrangement (13) with a housing (12) and an optoelectronic semiconductor chip (8) embedded in the housing (12), wherein the optoelectronic semiconductor chip (8) is designed to emit electromagnetic radiation, wherein at least a first radiation emission surface (9) of the optoelectronic semiconductor chip (8) is not covered by a material of the housing (12), wherein the housing (12) is at least partially black.

2. Optoelectronic component (1, 5, 6, 7) according to claim 1, wherein the optoelectronic arrangement (13) comprises a privacy filter (15), wherein the privacy filter (15) is arranged on the first radiation emission surface (9), wherein the privacy filter (15) has slats (16) extending in a direction perpendicular to the first radiation emission surface (9).

3. Optoelectronic component (2, 3, 4, 6, 7) according to claim 1, wherein the optoelectronic arrangement (13) comprises a black layer (17), wherein the black layer (17) is arranged on the first radiation emission surface (9).

4. Optoelectronic component (1, 2, 3, 4, 5, 6, 7) according to claim 2 or 3, wherein the optoelectronic arrangement (13) comprises a wavelength-converting material (14), wherein the wavelength-converting material (14) is arranged on the first radiation emission surface (9).

5. Optoelectronic component (1, 2, 3, 4, 5, 6, 7) according to claim 4, wherein the wavelength-converting material (14) is arranged on the first radiation-emitting surface (9) and the privacy filter (15) or the black layer (17) is arranged on a side of the wavelength-converting material (14) facing away from the first radiation-emitting surface (9).

6. Optoelectronic component (5, 6, 7) according to claim 2 and 4, wherein the wavelength-converting material (14) is arranged between the slats (16) of the privacy filter (15).

7. Optoelectronic component (1, 2, 3, 4, 5, 6, 7) according to one of the preceding claims, wherein the housing (12) has an inner housing part (18) and an outer housing part (19), wherein the optoelectronic semiconductor chip (8) is embedded in the inner housing part (18), wherein the inner housing part (18) is embedded in the outer housing part (19), wherein the inner housing part (18) is white and the outer housing part (19) is black.

8. Optoelectronic component (1, 2, 3, 4, 5, 6, 7) according to one of the preceding claims 1 to 6, wherein at least one waveguide structure (20) is embedded in the housing (12), wherein the waveguide structure (20) is designed to guide electromagnetic radiation emitted by the optoelectronic semiconductor chip (8) parallel to the first radiation emission surface (9) at a predeterminable angle with respect to the first radiation emission surface (9).

9. Optoelectronic component (6, 7) according to one of the preceding claims, comprising a plurality of optoelectronic arrangements (13) according to one of the preceding claims, wherein the optoelectronic arrangements (13) are arranged laterally next to one another on a mounting surface (21) of a carrier (22), wherein the optoelectronic arrangements (13) are embedded in a potting material (24) arranged on the mounting surface.

10. Optoelectronic component (6, 7) according to claim 9, wherein the carrier (22) is black.

11. Optoelectronic component (6, 7) according to claim 9 or 10, wherein a cover (26) is arranged on a potting surface (25) of the potting material (24), wherein the cover (26) is transparent.

12. Optoelectronic component (7) according to claim 11, wherein the cover (26) is designed as a further privacy filter (27), wherein the further privacy filter (27) has further slats (28) running in a direction perpendicular to the mounting surface (21) of the carrier (22).

Images