Etching gas

Abstract

The purpose of the present disclosure is to provide a novel etching gas. Provided is an etching gas.

Description

Etching gas

[0001] The present disclosure relates to etching gases.

[0002] Patent Document 1 is a CF ３ COCF ３ (hexafluoroacetone), and C ３ F ６ This disclosure discloses an etching method in which an etching gas of O (hexafluoropropene oxide) and an etching gas to argon gas are introduced into a processing chamber at a flow rate ratio of 1:10 to 30, and a silicon oxide-based material layer on a substrate to be processed in the processing chamber is etched in a plasma atmosphere.

[0003] Publication number JP 9-129612

[0004] An object of the present disclosure is to provide a new etching gas containing 1,2-difluoroethylene (CHF=CHF).

[0005] The present disclosure encompasses the following configurations.

[0006] Item 1. An etching gas containing 1,2-difluoroethylene (CHF=CHF).

[0007] Item 2. A method for etching a substrate for manufacturing a semiconductor, using the etching gas according to Item 1.

[0008] Item 3. A semiconductor manufacturing apparatus having the gas ejection portion for the etching gas according to Item 1.

[0009] Item 4. A method for manufacturing a semiconductor, comprising etching a substrate for manufacturing a semiconductor using the etching gas according to Item 1.

[0010] Item 5. Use of the etching gas according to Item 1 for etching a substrate for semiconductor manufacturing, for semiconductor manufacturing.

[0011] According to the present disclosure, it is possible to newly provide an etching gas containing 1,2-difluoroethylene (CHF=CHF).

[0012] In this specification, "containing" is a concept that encompasses all of "comprise," "consist essentially of," and "consist only of." In this specification, when a numerical range is expressed as "A to B," it means "A or more and B or less." When parts, % and the like are used in this specification, these represent parts by mass, parts by weight, mass %, or weight % (wt%).

[0013] 1. Etching gases In conventional semiconductor manufacturing, the microfabrication process uses c-C ４ F ８ (GWP: 10,300), CF ４ (GWP: 7,390), SF ６ (GWP: 24,300), CHF ３ (GWP: 14,800), CH ２ F ２ Gases with high global warming potential (GWP), such as ethane (GWP: 675), are used in this process, making it an environmentally hazardous process.

[0014] The present disclosure encompasses an etching gas containing 1,2-difluoroethylene (CHF=CHF) used to etch semiconductor manufacturing substrates during semiconductor manufacturing.

[0015] 1,2-Difluoroethylene The etching gas of the present disclosure uses 1,2-difluoroethylene (CHF=CHF), a low GWP gas, and can satisfactorily etch substrates used in semiconductor manufacturing.

[0016] In the etching gas of the present disclosure, from the viewpoint of etching rate (ER), preferably, at least one type of 1,2-difluoroethylene selected from the group consisting of trans-1,2-difluoroethylene (HFO-1132(E)) and cis-1,2-difluoroethylene (HFO-1132(Z)) is used as the 1,2-difluoroethylene, and more preferably, trans-1,2-difluoroethylene (HFO-1132(E), GWP: 0.0036) is used.

[0017] The etching gas of the present disclosure may use one type of 1,2-difluoroethylene alone, or may use a mixture (blend) of two or more types.

[0018] Other Etching Gases The etching gas of the present disclosure may contain other etching gases, such as CH ２ F ２ , CHF ３ , C ２ H ２ F ２ (1,1-difluoroethylene), C ２ H ４ F ２ , C ３ H ２ F ４ Hydrofluorocarbon compounds (HFCs) such as CF ４ , C ２ F ６ , C ３ F ８ , C ４ F ８ , C ３ F ６ , C ４ F ６ , C ５ F ８ Perfluorocarbon compounds (PFCs) such as CF ３ I, C ２ F ５ I, C ３ F ７ Iodides such as I; SF ６ It may also contain the following.

[0019] The etching gas of the present disclosure may be used alone or in combination of two or more types of other etching gases (blends).

[0020] Inert Gas The etching gas of the present disclosure may contain an inert gas as needed from the viewpoint of etching rate (ER). Examples of the inert gas include one or more of rare gases, nitrogen, etc. Examples of rare gases include helium, neon, argon, xenon, krypton, etc., and argon is preferred. These inert gases may be used alone or in a mixture (blend) of two or more.

[0021] Etching Gases The etching gases of the present disclosure exhibit high etch rates (ER) on semiconductor manufacturing substrates.

[0022] The etching gases of the present disclosure are low GWP gases, enabling environmentally friendly and sustainable microfabrication techniques for semiconductor manufacturing substrates.

[0023] 2. Etching Method The present disclosure encompasses a method for etching a substrate for manufacturing a semiconductor, using an etching gas containing 1,2-difluoroethylene (CHF=CHF) of the present disclosure as a gas supplied to generate plasma.

[0024] 3. Semiconductor Manufacturing Equipment The present disclosure encompasses semiconductor manufacturing equipment having a gas ejection portion for an etching gas containing 1,2-difluoroethylene (CHF=CHF) of the present disclosure.

[0025] 4. Semiconductor Manufacturing Method The present disclosure encompasses a semiconductor manufacturing method in which a substrate for semiconductor manufacturing is etched using an etching gas containing 1,2-difluoroethylene (CHF=CHF) of the present disclosure.

[0026] 5. Use for Semiconductor Manufacturing The present disclosure includes the use of an etching gas containing 1,2-difluoroethylene (CHF=CHF) of the present disclosure for etching semiconductor manufacturing substrates, in the manufacture of semiconductors.

[0027] The etching gas of the present disclosure exhibits a favorable etching rate (ER) for substrates such as Si substrates used in semiconductor manufacturing, leading to improved productivity of substrates used in semiconductor manufacturing.

[0028] While the embodiments of the present disclosure have been described above, various changes in form and details are possible without departing from the spirit and scope of the claims.

[0029] The present invention will be specifically described below using examples and comparative examples, but the present invention is not limited to these examples alone.

[0030] Plasma Processing Methods of Examples and Comparative Examples (1) Etching Etching performance was evaluated using a gas containing 1,2-difluoroethylene (CHF=CHF). Deposited films (P-TEOS film, P-SiN film, PolySi film, and ACL film) were etched using a CCP (Capacitively Coupled Plasma) device and a gas containing CHF=CHF.

[0031] Etching conditions HF (High Frequency): 1,000 W (40 MHz) LF (Low Frequency): 2,000 W (13.56 MHz) Pressure: 20 mTorr Top temperature: 80°C Wall temperature: 80°C ESC: 40°C Etching time: 30 s CHF = CHF-containing gas: 10 sccm Ar: 100 sccm

[0032]

[0033] In the examples (etching using CHF=CHF), the plasma processing method was able to etch deposited films such as P-TEOS film, P-SiN film, PolySi film, ACL film, etc. The etching gas containing 1,2-difluoroethylene (CFH=CFH) of the present disclosure exhibits a favorable etching rate (ER) and is useful as an etching gas.

Claims

1. Etching gas containing 1,2-difluoroethylene (CHF=CHF).

2. A method for etching a substrate for manufacturing a semiconductor, using the etching gas according to claim 1.

3. A semiconductor manufacturing device having a gas ejection portion for the etching gas according to claim 1.

4. A method for manufacturing a semiconductor, comprising etching a substrate for manufacturing a semiconductor using the etching gas according to claim 1.

5. Use of the etching gas according to claim 1 for etching substrates for semiconductor manufacturing in the manufacture of semiconductors.

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