Cleaning agent composition for wafer processing

Abstract

An embodiment of the present invention provides a cleaning agent composition for wafer processing, which has excellent removability of a wafer processing adhesive.　An embodiment of the present disclosure relates to a cleaning agent composition for wafer processing for removing a wafer processing adhesive remaining on a wafer, wherein the cleaning agent composition contains a nitrogen-containing aprotic polar solvent (component A) having 2 to 10 inclusive carbon atoms and an organic amine (component B), the component A is a nitrile compound, and the value of the Hansen solubility parameter of a mixed solvent comprising the component A and the component B is 20.0 to 26.0 inclusive.

Description

Cleaning composition for wafer processing

[0001] The present disclosure relates to a cleaning composition for wafer processing, a cleaning method and a method for manufacturing semiconductor substrates using the same, and an adhesive remover.

[0002] In recent years, the high integration of semiconductor devices has progressed dramatically, and three-dimensional integrated circuit (3DIC) technology has attracted attention. 3DIC technology is a technique for stacking wafers in multiple layers while connecting them using through-silicon vias (TSVs) and other methods. When stacking wafers in multiple layers, the backside of the wafer (the side without the circuit) on which the circuit is formed must be thinned by polishing, and further processing such as forming electrodes on the backside is required. Before thinning, the wafer is bonded (temporarily bonded or temporarily fixed) to a fixing member (support) with an adhesive. After processing such as polishing and electrode formation, the wafer is separated from the fixing member. After the wafer is separated from the fixing member, adhesive often remains, which can cause problems in subsequent processes. Therefore, a cleaning process is performed to remove the adhesive remaining on the wafer.

[0003] Various compositions for removing such adhesive residues have been developed. For example, Japanese Patent Laid-Open Publication No. 2012-186480 (Patent Document 1) proposes a cleaning agent for semiconductor substrates capable of removing particles and carbon defects present on the substrate surface, comprising 0.05 to 50 wt % of an organic acid having at least one carboxy group, 0.01 to 30 wt % of a specific complexing agent, and 0.05 to 50 wt % of a specific organic solvent. WO 2010 / 016350 (Patent Document 2) proposes a residue-stripping solution composition for removing resist residues and metal residues derived from wiring materials, comprising specific amounts of ammonium fluoride, methanesulfonic acid, a compound having a specific carbon-carbon triple bond, a specific water-soluble organic solvent, and water. Japanese Patent Laid-Open Publication No. 2023-105258 (Patent Document 3) proposes a pressure-sensitive adhesive treatment solution capable of removing pressure-sensitive adhesives, the treatment solution comprising a liquid having a Hansen solubility parameter value of 25 or less and an alkaline compound, the liquid having a Hansen solubility parameter value of 25 or less comprising a mixed solvent of a lower alcohol and an organic solvent other than the lower alcohol, and the concentration of the alkaline compound is 0.05% by weight to 20% by weight. WO 2016 / 021646 (Patent Document 4) discloses a rework solvent containing at least an amine solvent and a specific glycol ether solvent as a rework solvent for cleaning an adhesive layer attached to a peeled semiconductor circuit-forming substrate or support substrate. WO 2022 / 163350 (Patent Document 5) proposes a composition for semiconductor devices with excellent residue removal properties, the composition containing an alcohol, an aprotic polar solvent, an azole compound, an alkanolamine, and water. JP 2022-549372 A (Patent Document 6) proposes a cleaning agent composition containing (i) an alkanolamine, (ii) an ether alcohol solvent or an aromatic-containing alcohol, and (iii) a corrosion inhibitor, as a composition for removing photoresist from a substrate.Japanese Patent Laid-Open Publication No. 2021-158352 (Patent Document 7) proposes a polymer cleaning composition that can remove adhesive polymers remaining on the circuit surface of a wafer during a semiconductor manufacturing process without corroding the metal, and that contains a fluorinated alkyl compound, a polar protic solvent, and an amine compound, where the amine compound contains an acyclic secondary amine compound or an acyclic amine compound. Japanese Patent Laid-Open Publication No. 2006-63201 (Patent Document 8) proposes a cleaning agent that is composed of an alkaline component and a hydrophilic organic solvent and has an electrical conductivity of 0.1 to 3.0 mS / cm at 30°C as an alkaline cleaning agent for removing oils, greases, resins, particles, etc., adhering to electronic components, etc.

[0004] In one aspect, the present disclosure relates to a cleaning composition for removing a wafer processing adhesive remaining on a wafer, the cleaning composition for wafer processing comprising a nitrogen-containing aprotic polar solvent (component A) having from 2 to 10 carbon atoms and an organic amine (component B), wherein component A is a nitrile compound, and the mixed solvent consisting of component A and component B has a Hansen solubility parameter value of from 20.0 to 26.0.

[0005] In one aspect, the present disclosure relates to a cleaning method for removing an adhesive for wafer processing from a wafer to which the adhesive has adhered, the method including a cleaning step of cleaning the wafer to which the adhesive for wafer processing has adhered using a cleaning composition for wafer processing of the present disclosure.

[0006] In one aspect, the present disclosure relates to a method for manufacturing a semiconductor substrate, the method including: (1) bonding a wafer to a fixing member with an adhesive; (2) polishing a surface of the wafer opposite to the surface bonded to the fixing member; (3) processing the polished surface of the wafer; (4) separating the processed wafer from the fixing member; and (5) removing the adhesive remaining on the separated wafer with a cleaning agent, wherein the cleaning agent is a cleaning agent composition containing a nitrogen-containing aprotic polar solvent having from 2 to 10 carbon atoms (component A) and an organic amine (component B), wherein component A is a nitrile compound, and the mixed solvent consisting of component A and component B has a Hansen solubility parameter value of from 20.0 to 26.0.

[0007] In one aspect, the present disclosure relates to an adhesive remover for removing a wafer processing adhesive remaining on a wafer, the adhesive remover comprising a nitrogen-containing aprotic polar solvent (component A) having from 2 to 10 carbon atoms and an organic amine (component B), wherein component A is a nitrile compound, and the mixed solvent consisting of component A and component B has a Hansen solubility parameter value of from 20.0 to 26.0.

[0008] 1 is a flowchart illustrating steps in an embodiment of a method for manufacturing a semiconductor substrate according to the present disclosure. FIG. 2 is a schematic diagram illustrating steps in an embodiment of a method for manufacturing a semiconductor substrate according to the present disclosure.

[0009] In the manufacturing process of three-dimensional integrated circuits (3DICs), processing such as electrode formation after polishing a wafer bonded (temporarily bonded or temporarily fixed) to a fixing member (support) with an adhesive may be performed at high temperatures of 150°C or higher. If the adhesive is altered by heating, it tends to become difficult to remove. Cleaning compositions are required to have excellent removability (cleaning ability) for temporary fixing adhesives (wafer processing adhesives) used during such wafer processing. However, the compositions proposed in Patent Documents 1 to 3 do not have sufficient removability for wafer processing adhesives. Furthermore, Patent Document 4 proposes a rework agent containing monoethanolamine and 1-methyl-2-pyrrolidone (NMP) in an example, but the use of NMP and the like in cleaning compositions has recently been restricted due to environmental considerations.

[0010] Therefore, the present disclosure provides a cleaning composition for wafer processing that has excellent removability for adhesives used in wafer processing, a cleaning method and a method for manufacturing semiconductor substrates that use the same, and an adhesive remover.

[0011] According to the present disclosure, it is possible to provide a cleaning composition for wafer processing that has excellent removability of adhesives used in wafer processing, a cleaning method and a semiconductor substrate manufacturing method using the same, and an adhesive remover.

[0012] The present disclosure is based on the finding that wafer processing adhesives (hereinafter simply referred to as "adhesives") can be efficiently removed by using a cleaning composition containing a nitrile compound (component A), which is an aprotic polar solvent having from 2 to 10 carbon atoms, and an organic amine (component B), in which the Hansen solubility parameter value of the mixed solvent consisting of components A and B is within a predetermined range.

[0013] In one aspect, the present disclosure relates to a cleaning composition for wafer processing (hereinafter also referred to as the "cleaning composition of the present disclosure") for removing a wafer processing adhesive remaining on a wafer, the cleaning composition comprising a nitrogen-containing aprotic polar solvent (component A) having from 2 to 10 carbon atoms and an organic amine (component B), wherein component A is a nitrile compound, and the mixed solvent consisting of component A and component B has a Hansen solubility parameter value of from 20.0 to 26.0.

[0014] According to one or more embodiments, the present disclosure can provide a cleaning composition that is excellent in removing adhesives for wafer processing. Furthermore, by using the cleaning composition of the present disclosure, high-quality semiconductor substrates can be obtained with high yield.

[0015] Although the details of the mechanism of action by which the effects of the present disclosure are realized are partially unknown, it is presumed as follows. In the cleaning composition of the present disclosure, it is believed that the nitrile compound (component A), an aprotic polar solvent having from 2 to 10 carbon atoms, penetrates into the adhesive remaining on the wafer and swells it, thereby generating stress on the adhesive surface and promoting peeling of the adhesive. Furthermore, while a certain amount of organic amine (component B) alone has difficulty penetrating into the adhesive, the cleaning composition of the present disclosure combines the organic amine (component B) with the nitrile compound (component A), an aprotic polar solvent having from 2 to 10 carbon atoms, and adjusts the Hansen solubility parameter of the mixed solvent consisting of components A and B to 20.0 to 26.0. This promotes penetration of the cleaning composition into the adhesive, and the stress generated by the dissolution or swelling of the adhesive is believed to facilitate peeling of the adhesive from the substrate. However, the present disclosure need not be interpreted as being limited to this mechanism.

[0016] In one or more embodiments, the cleaning composition of the present disclosure is used to remove adhesive from a wafer to which the adhesive is adhered. That is, in one or more embodiments, the cleaning composition of the present disclosure is an adhesive remover (hereinafter also referred to as the "adhesive remover of the present disclosure") for removing wafer processing adhesive remaining on a wafer. In one or more embodiments, the adhesive remover of the present disclosure contains a nitrogen-containing aprotic polar solvent (component A) having from 2 to 10 carbon atoms and an organic amine (component B), wherein component A is a nitrile compound, and the mixed solvent consisting of components A and B has a Hansen solubility parameter value of from 20.0 to 26.0. In one or more embodiments, the cleaning composition or adhesive remover of the present disclosure can be used to remove adhesive remaining on a wafer after separating the wafer from a fixing member that has been adhesively bonded to the fixing member. Examples of wafers include semiconductor substrates. Examples of semiconductor substrates include silicon wafers, germanium wafers, gallium-arsenide wafers, gallium-phosphorus wafers, and gallium-arsenide-aluminum wafers. In one or more embodiments, the wafer may be a substrate having pads and / or lands that serve as bonding and mounting sites. Examples of adhesives for wafer processing include those that can bond the wafer to a fixing member, have durability sufficient to withstand the polishing and processing steps, and allow the wafer to be easily separated from the fixing member in the separation step. Examples of such adhesives include at least one selected from acrylic adhesives, urethane adhesives, silicone adhesives, novolac adhesives, and polyimide adhesives.

[0017] [Nitrogen-Containing Aprotic Polar Solvent Having 2 to 10 Carbon Atoms (Component A)] The cleaning composition of the present disclosure may contain one type of nitrogen-containing aprotic polar solvent having 2 to 10 carbon atoms (hereinafter also referred to as "Component A"), or a combination of two or more types of nitrogen-containing aprotic polar solvents.

[0018] From the same viewpoint, the number of carbon atoms in component A is 2 or more and 10 or less, preferably 2 or more and 9 or less, and more preferably 2 or more and 8 or less, from the viewpoint of improving the removability of the wafer processing adhesive.

[0019] From the viewpoint of improving the removability of the wafer processing adhesive, the Hansen solubility parameter value of component A is preferably 26.0 or less, more preferably 25.5 or less, more preferably 25.0 or less, and even more preferably 24.5 or less, and from the same viewpoint, it is preferably 20.0 or more, more preferably 20.5 or more, and even more preferably 21.0 or more. Herein, in the present disclosure, the Hansen solubility parameter (hereinafter also referred to as "HSP") is a value used to predict the solubility of a substance, which was announced by Charles M. Hansen in 1967, and is a parameter based on the idea that "two substances with similar intermolecular interactions are likely to dissolve in each other." HSP is calculated by combining the following three parameters (unit: MPa ０．５ ) δd: Energy due to intermolecular dispersion forces δp: Energy due to intermolecular dipole interactions δh: Energy due to intermolecular hydrogen bonds Detailed explanations are given in the March 2010 issue of Chemical Industry (Chemical Industry Co., Ltd.), and the Hansen solubility parameters of various substances can be obtained using the computer software "HSPiP: Hansen Solubility Parameters in Practice." HSP can also be determined by the method described in the Examples.

[0020] From the viewpoint of improving the removability of the wafer processing adhesive, component A is a nitrile compound, and examples thereof include at least one selected from benzonitrile, phenylacetonitrile, and acetonitrile.

[0021] The content of Component A in the cleaning composition of the present disclosure is preferably 50.0 mass% or more, more preferably 60.0 mass% or more, and even more preferably 70.0 mass% or more, from the viewpoint of penetration of the cleaning composition into the wafer processing adhesive. From the same viewpoint, it is preferably 99.9 mass% or less, more preferably 95.0 mass% or less, and even more preferably 90.0 mass% or less. More specifically, the content of Component A in the cleaning composition of the present disclosure is preferably 50.0 mass% or more and 99.9 mass% or less, more preferably 60.0 mass% or more and 95.0 mass% or less, and even more preferably 70.0 mass% or more and 90.0 mass% or less. When Component A is a combination of two or more types, the content of Component A refers to the total content of those components.

[0022] In the present disclosure, the "content of each component in the cleaning composition" refers to the content of each component at the time of cleaning, i.e., at the time when the cleaning composition starts to be used for cleaning. In one or more embodiments, the content of each component in the cleaning composition of the present disclosure can be considered to be the blending amount of each component in the cleaning composition of the present disclosure.

[0023] (Component B: Organic Amine) The organic amine contained in the cleaning composition of the present disclosure (hereinafter also referred to as "Component B") may be one type or a combination of two or more types. From the viewpoint of improving the removability of wafer processing adhesives, for example, Component B includes a compound represented by the following formula (I): In the above formula (I), R １ represents a linear alkanol group having 2 to 4 carbon atoms, and R ２ represents a linear alkanol group having 2 to 4 carbon atoms, a methyl group, or a hydrogen atom; R ３ represents a methyl group or a hydrogen atom. １ From the viewpoint of improving the removability of the adhesive for wafer processing, R is preferably a linear alkanol group having 2 or 3 carbon atoms. ２ From the same viewpoint, R is preferably a hydrogen atom. ３ From the same viewpoint, is preferably a hydrogen atom.

[0024] In one or more embodiments, component B may be an organic amine such that the Hansen solubility parameter (HSP) of a mixed solvent consisting of components A and B is in the range of 20.0 or more and 26.0 or less, and the Hansen solubility parameter value of component B may not be particularly limited.

[0025] From the viewpoint of improving the removability of the wafer processing adhesive, component B is preferably an alkanolamine (amino alcohol). Examples of alkanolamines include at least one selected from N-methylmonoethanolamine, N-ethylmonoethanolamine, diethanolamine, N-dimethylmonoethanolamine, N-methyldiethanolamine, N-diethylmonoethanolamine, N-ethyldiethanolamine, N-(β-aminoethyl)ethanolamine, N-(β-aminoethyl)diethanolamine, monoethanolamine, and 2-(methylamino)ethanol. Among these, at least one selected from monoethanolamine, N-methyldiethanolamine, and 2-(methylamino)ethanolamine is preferred, at least one selected from monoethanolamine and 2-(methylamino)ethanolamine is more preferred, and monoethanolamine is even more preferred.

[0026] From the viewpoint of improving the removability of wafer processing adhesives, the content of component B in the cleaning composition of the present disclosure is preferably 0.1% by mass or more, more preferably 5.0% by mass or more, and even more preferably 10.0% by mass or more. From the same viewpoint, it is preferably 50.0% by mass or less, more preferably 40.0% by mass or less, and even more preferably 30.0% by mass or less. More specifically, the content of component B in the cleaning composition of the present disclosure is preferably 0.1% by mass or more and 50.0% by mass or less, more preferably 5.0% by mass or more and 40.0% by mass or less, and even more preferably 10.0% by mass or more and 30.0% by mass or less. When component B is a combination of two or more types, the content of component B refers to the total content of those components.

[0027] The mass ratio B / A of component B to component A (content of component B / content of component A) in the cleaning composition of the present disclosure is preferably 0.001 or more, more preferably 0.01 or more, and even more preferably 0.1 or more from the viewpoint of improving the removability of wafer processing adhesives, and from the same viewpoint, is preferably 1 or less, more preferably 0.7 or less, and even more preferably 0.5 or less. More specifically, the mass ratio B / A is preferably 0.001 or more and 1 or less, more preferably 0.01 or more and 0.7 or less, and even more preferably 0.1 or more and 0.5 or less.

[0028] From the viewpoint of improving the removability of the wafer processing adhesive, the total content of Components A and B in the cleaning composition of the present disclosure is preferably 50.1% by mass or more, more preferably 65% ​​by mass or more, even more preferably 80% by mass or more, still more preferably 95% by mass or more, and still more preferably 98% by mass or more. From the viewpoint of improving the removability of the wafer processing adhesive, the total content of Components A and B in the cleaning composition of the present disclosure may be 100% by mass.

[0029] (Hansen Solubility Parameter Value of Mixed Solvent) From the viewpoint of improving the removability of the wafer processing adhesive, the solubility parameter value (HSP) of the mixed solvent consisting of component A and component B is 20.0 or more, preferably 20.5 or more, and more preferably 21.0 or more, and from the same viewpoint, it is 26.0 or less, preferably 25.5 or less, more preferably 25.0 or less, and even more preferably 24.5 or less. More specifically, the solubility parameter value of the mixed solvent consisting of component A and component B is 20.0 or more and 26.0 or less, preferably 20.5 or more and 25.5 or less, and even more preferably 21.0 or more and 24.5 or less. The HSP of the mixed solvent can be determined by the method described in the examples.

[0030] [Water (Component C)] In one or more embodiments, the cleaning composition of the present disclosure does not contain water or the water content may be 5% by mass or less. In one or more embodiments, examples of water (hereinafter also referred to as "component C") include ion-exchanged water, RO water, distilled water, pure water, and ultrapure water. When the cleaning composition of the present disclosure contains water (component C), the content of component C in the cleaning composition of the present disclosure may be the remainder excluding components A, B, and the optional components described below. Specifically, from the viewpoint of improving adhesive removability, the content of component C in the cleaning composition of the present disclosure is preferably 5% by mass or less, more preferably 3% by mass or less, even more preferably 1% by mass or less, and even more preferably 0% by mass (i.e., absent).

[0031] [Other Components] The cleaning composition of the present disclosure may further contain water (component C) or other components, as needed, in addition to Components A and B. Examples of other components include components that are typically used in cleaning agents, such as solvents other than Component A, alkaline agents other than Component B, surfactants, chelating agents, thickeners, dispersants, rust inhibitors, metal corrosion inhibitors, polymeric compounds, solubilizers, antioxidants, preservatives, antifoaming agents, and antibacterial agents. It is preferable that these optional components other than Components A and B (Component C, other components) do not significantly affect the Hansen Solubility Parameter value of the mixed solvent consisting of Components A and B.

[0032] In one or more embodiments, the cleaning composition of the present disclosure may be substantially free of an organic acid having at least one carboxyl group. For example, the content of the organic acid having at least one carboxyl group in the cleaning composition of the present disclosure is preferably less than 0.05% by mass, more preferably 0.01% by mass or less, and even more preferably 0% by mass (i.e., not present). In one or more embodiments, the cleaning composition of the present disclosure may be substantially free of ammonium fluoride. For example, the content of ammonium fluoride in the cleaning composition of the present disclosure is preferably less than 0.005% by mass, more preferably 0.001% by mass or less, and even more preferably 0% by mass (i.e., not present). In one or more embodiments, the cleaning composition of the present disclosure may be substantially free of methanesulfonic acid. For example, the content of methanesulfonic acid in the cleaning composition of the present disclosure is more preferably 0% by mass (i.e., not present). In one or more embodiments, the cleaning composition of the present disclosure may be substantially free of alkali metal or alkaline earth metal hydroxides, carbonates, or metal alkoxides. For example, the content of alkali metal or alkaline earth metal hydroxides, carbonates, or metal alkoxides in the cleaning composition of the present disclosure is preferably less than 0.001% by mass, and more preferably 0% by mass (i.e., no content). In one or more embodiments, the cleaning composition of the present disclosure may be substantially free of azole compounds. For example, the content of azole compounds in the cleaning composition of the present disclosure is preferably less than 0.1% by mass, and more preferably 0% by mass (i.e., no content). In one or more embodiments, the cleaning composition of the present disclosure may be substantially free of fluorinated alkyl compounds. For example, the content of fluorinated alkyl compounds in the cleaning composition of the present disclosure is preferably less than 0.1% by mass, and more preferably 0% by mass (i.e., no content).

[0033] [Method for Producing Detergent Composition] In one or more embodiments, the detergent composition of the present disclosure can be produced by blending the components A to B and, if necessary, the optional components described above (component C and other components) using a known method. For example, the detergent composition of the present disclosure can be produced by blending at least the components A to B. Thus, in one aspect, the present disclosure relates to a method for producing a detergent composition, the method including a step of blending at least the components A to B. In the present disclosure, "blending" includes mixing components A to B and, if necessary, the optional components described above (component C and other components) simultaneously or in any order. In the method for producing a detergent composition of the present disclosure, the preferred amount of each component can be the same as the preferred content of each component in the detergent composition of the present disclosure described above.

[0034] [Object to be Cleaned] Examples of objects to be cleaned include wafers with a wafer processing adhesive attached thereto. In one or more embodiments, examples of wafers include semiconductor substrates. Examples of semiconductor substrates include silicon wafers, germanium wafers, gallium-arsenide wafers, gallium-phosphorus wafers, and gallium-arsenide-aluminum wafers. In one or more embodiments, examples of wafers include substrates having pads and / or lands that serve as bonding and mounting sites. Examples of pad and land materials include metals such as gold, copper, and aluminum. In one or more embodiments, examples of wafers with an adhesive attached thereto include wafers that have been adhesively bonded to a fixing member and then separated from the fixing member. In one or more embodiments, the wafer separated from the fixing member is a substrate having metal pads with an adhesive attached to the metal pads. Thus, in one aspect, the present disclosure relates to use of the cleaning composition of the present disclosure as a cleaning agent for removing adhesive remaining on a wafer that has been adhesively bonded to a fixing member and then separated from the fixing member. In another aspect, the present disclosure relates to use of the adhesive remover of the present disclosure as a remover for removing adhesive remaining on a wafer after the wafer, which has been adhesively bonded to a fixing member, is separated from the fixing member. In one or more embodiments, the wafer adhesively fixed to a fixing member has undergone heat treatment. The heat treatment temperature may be, for example, 200°C or higher. In one or more embodiments, the heat treatment may be a heat treatment in the processing step described below. In one or more embodiments, the wafer to which adhesive has adhered may be a substrate to which adhesive has adhered, which is used in the manufacturing process of three-dimensional integrated circuits (3DIC). Accordingly, in one aspect, the present disclosure relates to use of the cleaning composition of the present disclosure as a cleaning agent for removing adhesive used in the manufacturing process of three-dimensional integrated circuits. In another aspect, the present disclosure relates to use of the adhesive remover of the present disclosure as a remover for removing adhesive used in the manufacturing process of three-dimensional integrated circuits. In one or more embodiments, the wafer to which adhesive has adhered has undergone heat treatment at a temperature of 200°C or higher.In one or more embodiments, the heat treatment may be a heat treatment in a processing step described below.

[0035] [Method for Manufacturing a Semiconductor Substrate] In one aspect, the present disclosure relates to a method for manufacturing a semiconductor substrate, including the steps of: (1) bonding a wafer to a fixing member with an adhesive; (2) polishing the surface of the wafer opposite the surface bonded to the fixing member; (3) processing the polished surface of the wafer; (4) separating the processed wafer from the fixing member; and (5) removing any adhesive remaining on the separated wafer with a cleaning agent, wherein the cleaning agent is a cleaning agent composition containing a nitrogen-containing aprotic polar solvent having from 2 to 10 carbon atoms (component A) and an organic amine (component B), and the mixed solvent consisting of component A and component B has a Hansen solubility parameter of from 20.0 to 26.0 (hereinafter also referred to as the "semiconductor substrate manufacturing method of the present disclosure"). In one or more embodiments, the cleaning agent used in step (5) is the cleaning agent composition of the present disclosure described above.

[0036] The method for manufacturing a semiconductor substrate according to the present disclosure will be described with reference to Fig. 1 and Fig. 2. Fig. 1 is a flowchart illustrating each step in one embodiment of the method for manufacturing a semiconductor substrate according to the present disclosure. Fig. 2 is a schematic diagram illustrating each step in one embodiment of the method for manufacturing a semiconductor substrate according to the present disclosure.

[0037] <Step (1): Adhesion Step> Step (1) is a step (adhesion step) of adhering a wafer 3 to a fixing member 1 with an adhesive 2 (step S1). In one or more embodiments, step (1) includes a step (1-1) of applying an adhesive to the surface of the wafer or the fixing member to form an adhesive layer, and a step (1-2) of bonding the wafer and the fixing member together via the adhesive layer and performing a heat treatment to bond them.

[0038] Examples of the wafer used in step (1) include a silicon wafer or a glass wafer having a diameter of 100 to 500 mm and a thickness of 50 to 2,000 μm. In one or more embodiments, the wafer used in step (1) is a substrate having metal pads.

[0039] The fixing member used in step (1) is not particularly limited, but examples thereof include substrates such as silicon wafers and glass plates having a diameter of 100 to 500 mm and a thickness of 50 to 20,000 μm.

[0040] The adhesive used in step (1) is not particularly limited as long as it can bond the wafer to the fixing member, has durability sufficient to withstand the polishing and processing steps, and allows the wafer to be easily separated from the fixing member in the separation step. Examples of suitable adhesives include wafer processing adhesives used in 3DIC manufacturing processes. Examples of wafer processing adhesives include at least one adhesive (adhesive composition) selected from an acrylic adhesive, a urethane adhesive, a silicone adhesive, a polyimide adhesive, and a novolac adhesive. Specifically, examples include the adhesive compositions described in JP 2021-161196 A. In one or more embodiments, the adhesive composition used in step (1) may include at least one adhesive component selected from an acrylic adhesive, a urethane adhesive, a silicone adhesive, a polyimide adhesive, and a novolac adhesive, and may further include a platinum group metal catalyst, a release agent component, a solvent, etc. The viscosity of the adhesive composition used in step (1) can be adjusted by appropriately changing the concentration of the components contained therein depending on the application method, film thickness, etc.

[0041] In step (1-1), the method for applying the adhesive (adhesive composition) is not particularly limited, and examples thereof include spin coating. The thickness of the applied layer (adhesive layer) of the adhesive (adhesive composition) is, for example, 5 to 500 μm. In one or more embodiments, step (1-1) includes bonding the surface of the wafer having the metal pads to a fixing member with an adhesive.

[0042] In step (1-2), the temperature for the heat treatment is, for example, 80°C or higher, and is preferably 300°C or lower from the viewpoint of preventing excessive curing of the adhesive. The time for the heat treatment is, for example, 30 seconds or longer, and is preferably 10 minutes or shorter from the viewpoint of preventing deterioration of the adhesive layer and other members. Heating can be performed using, for example, a hot plate, an oven, or the like. The film thickness of the adhesive layer after the heat treatment can be, for example, 5 μm or more and 100 μm or less.

[0043] <Step (2): Polishing Step> Step (2) is a polishing step (step S2) of polishing the surface (back surface) 3a of the wafer 3 opposite to the surface bonded to the fixing member 1. Examples of the polishing method include mechanical polishing using abrasive grains and chemical mechanical polishing. In step (2), the thickness of the wafer (thinned wafer) after polishing is preferably 200 μm or less, for example, 50 μm to 200 μm.

[0044] <Step (3): Processing Step> Step (3) is a step (processing step) of processing the polished surface 3a of the wafer 3 (the back surface of the thinned wafer) (step S3). In one or more embodiments, step (3) may include an electrode formation step, a metal wiring formation step, a protective film formation step, etc. Examples of step (3) include conventionally known processing steps such as metal sputtering for forming electrodes, wet etching, resist application, pattern formation, resist stripping, dry etching, metal plating, silicon etching for forming through-silicon vias (TSVs), and oxide film formation on the silicon surface. In one or more embodiments, step (3) is performed at a high temperature of 150°C or higher. When forming electrodes such as TSVs, a heat treatment at 250°C to 350°C may be performed.

[0045] <Step (4): Separation Step> Step (4) is a step (separation step) of separating the processed wafer 3 from the fixing member 1 (step S4). Examples of the separation method include solvent peeling, laser peeling, and mechanical peeling.

[0046] <Step (5): Cleaning Step> Step (5) is a step (cleaning step) in which adhesive (adhesive residue) 2a remaining on the separated wafer 3 is removed with a cleaning agent (step S5). In one or more embodiments, the separated wafer is a wafer to which an adhesive has adhered (the object to be cleaned as described above), and examples thereof include a substrate having an adhesive adhered to a metal pad. In one or more embodiments, the cleaning agent used in step (5) may be the cleaning agent composition of the present disclosure described above.

[0047] Examples of cleaning methods (methods for removing adhesives) in the cleaning step include immersion cleaning and spray cleaning. Accordingly, in one or more embodiments, the cleaning step is a step (immersion cleaning step) of immersing a wafer (object to be cleaned) having an adhesive attached thereto in the cleaning composition of the present disclosure. From the viewpoint of improving removability of the wafer processing adhesive, the immersion cleaning step is preferably a step of immersing the wafer (object to be cleaned) having the adhesive attached thereto in the cleaning composition at a temperature of 50°C or higher and 100°C or lower. From the viewpoint of improving removability of the wafer processing adhesive, the temperature of the cleaning agent used in the cleaning step (cleaning temperature) or the immersion temperature in the immersion cleaning step is preferably 50°C or higher, more preferably 60°C or higher, and even more preferably 70°C or higher, from the viewpoint of improving removability of the wafer processing adhesive. Furthermore, from the viewpoint of suppressing volatilization and degradation of the cleaning agent components, the temperature is preferably 100°C or lower, more preferably 90°C or lower, and even more preferably 80°C or lower. The cleaning time in the cleaning step or the immersion time in the immersion cleaning step is preferably 5 minutes or longer, more preferably 10 minutes or longer, and even more preferably 15 minutes or longer from the viewpoint of improving removability of the wafer processing adhesive, and is preferably 60 minutes or shorter, more preferably 40 minutes or shorter, and even more preferably 20 minutes or shorter from the viewpoint of productivity. In the cleaning step or the immersion cleaning step, ultrasonic vibration is preferably applied to the cleaning composition of the present disclosure so that the cleaning power of the cleaning composition of the present disclosure can be easily exerted, and ultrasonic vibration is preferably applied at a frequency of 25 to 50 kHz, for example, and more preferably at a frequency of 35 to 45 kHz from the viewpoint of suppressing damage to the wafer.

[0048] In one or more embodiments, the wafer after the cleaning step may be washed with water or rinsed with a rinse agent, such as at least one rinse agent selected from the group consisting of methanol, ethanol, isopropyl alcohol, and propylene glycol monomethyl ether, and then dried.

[0049] In one or more other embodiments, step (5) is a step of removing adhesive remaining on the separated wafer with an adhesive remover. In one or more embodiments, the adhesive remover used in step (5) may be the adhesive remover of the present disclosure described above. That is, in one or more embodiments, the method for manufacturing a semiconductor substrate of the present disclosure is a method for manufacturing a semiconductor substrate that includes: (1) a step of bonding a wafer to a fixing member with an adhesive; (2) a step of polishing the surface of the wafer opposite to the surface bonded to the fixing member; (3) a step of processing the polished surface of the wafer; (4) a step of separating the processed wafer from the fixing member; and (5) a step of removing adhesive remaining on the separated wafer with the adhesive remover of the present disclosure.

[0050] [Wafer Cleaning Method] In one aspect, the present disclosure relates to a wafer cleaning method for removing a wafer processing adhesive from a wafer (object to be cleaned) to which the adhesive has adhered, the wafer cleaning method including a cleaning step of cleaning the wafer to which the adhesive has adhered using a wafer processing cleaning composition of the present disclosure (hereinafter also referred to as the "cleaning method of the present disclosure"). In one or more embodiments, the cleaning step is a step of removing the wafer processing adhesive remaining on the wafer using the cleaning composition of the present disclosure after separating the wafer bonded to a fixing member with the wafer processing adhesive from the fixing member. The cleaning method of the present disclosure allows for efficient removal of the wafer processing adhesive.

[0051] In one or more embodiments, the cleaning method (adhesive removal method) in the cleaning step of the cleaning method of the present disclosure may be the same as the cleaning method (adhesive removal method) in step (5) in the semiconductor substrate manufacturing method of the present disclosure described above. In one or more embodiments, from the viewpoint of improving the removability of the wafer processing adhesive, the cleaning step in the cleaning method of the present disclosure is preferably a step (immersion cleaning step) of immersing a wafer (object to be cleaned) having the adhesive attached thereto in the cleaning composition at a temperature of 50°C or higher and 100°C or lower. In one or more embodiments, the immersion conditions (immersion temperature, immersion time, ultrasonic vibration, etc.) in the immersion cleaning step may be the immersion conditions (immersion temperature, immersion time, ultrasonic vibration, etc.) in the immersion cleaning step of step (5) in the semiconductor substrate manufacturing method of the present disclosure described above. In one or more embodiments, the wafer bonded to the fixing member with an adhesive in the cleaning method of the present disclosure has undergone a heat treatment, preferably at a temperature of 230°C or higher, more preferably at a temperature of 270°C or higher. Examples of heat treatment at a temperature of 230°C or higher include heat treatment for bonding a substrate on which a circuit is formed, a device such as a semiconductor chip, and a substrate on which another circuit is formed, using solder or metal fine particles. In one or more embodiments, the heat treatment step may be performed after the processing step of step (3) and before step (4). In one or more embodiments, the object to be cleaned in the cleaning method of the present disclosure may be a wafer that has undergone steps (1) to (4) in the semiconductor substrate manufacturing method of the present disclosure.

[0052] In one or more embodiments, the cleaning method of the present disclosure may further include a step of rinsing the wafer after the cleaning step with at least one rinse agent selected from methanol, ethanol, isopropyl alcohol, and propylene glycol monomethyl ether, and drying the wafer.

[0053] In one or more embodiments, the cleaning step in the cleaning method of the present disclosure is a step (removal step) of removing adhesive remaining on the wafer with an adhesive remover after separating a wafer bonded to a fixing member with an adhesive from the fixing member. Examples of the adhesive remover used in the removal step include the adhesive remover of the present disclosure described above. That is, in one or more embodiments, the cleaning method of the present disclosure is an adhesive removal method that includes a step of removing adhesive remaining on the wafer with the adhesive remover of the present disclosure after separating a wafer bonded to a fixing member with an adhesive from the fixing member.

[0054] [Kit] In one aspect, the present disclosure relates to a kit (hereinafter also referred to as the "kit of the present disclosure") for use in either the cleaning method of the present disclosure or the semiconductor substrate production method of the present disclosure. In one or more embodiments, the kit of the present disclosure is a kit for producing the cleaning composition of the present disclosure. The kit of the present disclosure can provide a cleaning composition with excellent removability of wafer processing adhesives. The cleaning composition of the present disclosure may be a so-called one-component type, in which component A and component B are provided on the market in a mixed state, or a two-component type, in which the components are mixed at the time of use. Thus, in one or more embodiments, the kit of the present disclosure may include a kit containing a solution containing component A and component B. The solution may contain the optional components described above (component C, other components) as necessary. The solution may be diluted with water (component C) or an organic solvent as necessary at the time of use. In one or more embodiments, the kit of the present disclosure may include a kit (two-component cleaning composition) in which a solution containing component A (first component) and a solution containing component B (second component) are not mixed with each other, and the first and second components are mixed at the time of use. After the first and second liquids are mixed, they may be diluted with component C (water) or an organic solvent, if necessary. Each of the first and second liquids may contain the optional components described above, if necessary.

[0055] The present disclosure further relates to one or more of the following embodiments. <1> A cleaning composition for removing a wafer processing adhesive remaining on a wafer, comprising: a nitrogen-containing aprotic polar solvent (component A) having from 2 to 10 carbon atoms; and an organic amine (component B), wherein component A is a nitrile compound; and the Hansen solubility parameter value of a mixed solvent consisting of components A and B is from 20.0 to 26.0. <2> The cleaning composition for wafer processing according to <1>, wherein component A includes at least one selected from benzonitrile, phenylacetonitrile, and acetonitrile. <3> The cleaning composition for wafer processing according to <1> or <2>, wherein the content of component A is from 50.0 to 99.9% by mass, or from 60.0 to 95.0% by mass, or from 70.0 to 90.0% by mass. <4> The cleaning composition for wafer processing according to any one of <1> to <3>, wherein component B contains a compound represented by the following formula (I): In the above formula (I), R １ represents a linear alkanol group having 2 to 4 carbon atoms, and R ２ represents a linear alkanol group having 2 to 4 carbon atoms, a methyl group, or a hydrogen atom; R ３represents a methyl group or a hydrogen atom. <5> The cleaning composition for wafer processing according to any one of <1> to <4>, wherein the component B is at least one selected from monoethanolamine and 2-(methylamino)ethanol. <6> The cleaning composition for wafer processing according to any one of <1> to <5>, wherein the content of the component B is 0.1 mass% to 50.0 mass%, or 5.0 mass% to 40.0 mass%, or 10.0 mass% to 30.0 mass%. <7> The cleaning composition for wafer processing according to any one of <1> to <6>, wherein the mass ratio B / A of component B to component A is 0.001 to 1, or 0.01 to 0.7, or 0.1 to 0.5. <8> The cleaning composition for wafer processing according to any one of <1> to <7>, wherein the total content of component A and component B is 50.1% by mass or more, or 65% by mass or more, or 80% by mass or more, or 95% by mass or more, or 98% by mass or more, or 100% by mass. <9> The cleaning composition for wafer processing according to any one of <1> to <8>, wherein the mixed solvent consisting of component A and component B has a solubility parameter (HSP) of 20.5 or more and 25.5 or less, or 21.0 or more and 24.5 or less. <10> The cleaning composition for wafer processing according to any one of <1> to <9>, wherein the cleaning composition for wafer processing does not contain water, or the water content is 5% by mass or less, or 3% by mass or less, or 1% by mass or less. <11> A cleaning composition for removing a wafer processing adhesive remaining on a wafer, comprising: a nitrogen-containing aprotic polar solvent having from 2 to 10 carbon atoms (component A); and an organic amine (component B), wherein component A is a nitrile compound, component A contains at least one of benzonitrile, phenylacetonitrile, and acetonitrile, and component B contains a compound represented by the following formula (I): In the above formula (I), R １ represents a linear alkanol group having 2 to 4 carbon atoms, and R ２ represents a linear alkanol group having 2 to 4 carbon atoms, a methyl group, or a hydrogen atom; R ３represents a methyl group or a hydrogen atom. A cleaning composition for wafer processing, wherein the mass ratio B / A of component B to component A is 0.001 or more and 1 or less, the total content of components A and B is 50.1 mass% or more, and the Hansen solubility parameter value of the mixed solvent consisting of components A and B is 20.0 or more and 26.0 or less. <12> A cleaning method for removing an adhesive for wafer processing from a wafer to which the adhesive has adhered, the method comprising a cleaning step of cleaning the wafer to which the adhesive has adhered using the cleaning composition for wafer processing according to any one of <1> to <11>. <13> The wafer cleaning method according to <12>, wherein the cleaning step is a step of immersing the wafer to which the adhesive has adhered in the cleaning composition at 50°C or more and 100°C or less. <14> A method for producing a semiconductor substrate, comprising: (1) bonding a wafer to a fixing member with an adhesive, (2) polishing the surface of the wafer opposite to the surface bonded to the fixing member, (3) processing the polished surface of the wafer, (4) separating the processed wafer from the fixing member, and (5) removing any adhesive remaining on the separated wafer with a cleaning agent, wherein the cleaning agent is a cleaning agent composition containing a nitrogen-containing aprotic polar solvent having from 2 to 10 carbon atoms (component A) and an organic amine (component B), wherein component A is a nitrile compound, and the mixed solvent consisting of component A and component B has a Hansen solubility parameter value of from 20.0 to 26.0. <15> The method for producing a semiconductor substrate according to <14>, wherein the content of component A in the cleaning agent composition is from 50.0% by mass to 99.9% by mass. <16> An adhesive remover for removing a wafer processing adhesive remaining on a wafer, the adhesive remover comprising: a nitrogen-containing aprotic polar solvent (component A) having 2 to 10 carbon atoms; and an organic amine (component B), wherein component A is a nitrile compound; and the mixed solvent consisting of component A and component B has a Hansen solubility parameter value of 20.0 to 26.0.

[0056] The present disclosure will be specifically described below using examples, but the present disclosure is not limited to these examples in any way.

[0057] 1. Preparation of Cleaning Compositions of Examples 1 to 8 and Comparative Examples 1 to 6 The components shown in Table 1 were blended in the amounts (% by mass, active ingredient) shown in Table 1 and mixed by stirring to prepare the cleaning compositions of Examples 1 to 8 and Comparative Examples 1 to 6.

[0058] The following materials were used to prepare the cleaning compositions of Examples 1 to 8 and Comparative Examples 1 to 6. (Nitrogen-containing aprotic polar solvents) Benzonitrile [manufactured by FUJIFILM Wako Pure Chemical Industries, Ltd.] <δd=18.8, δp=12.0, δh=3.3> Phenylacetonitrile [manufactured by Tokyo Chemical Industry Co., Ltd.] <δd=19.5, δp=12.3, δh=3.8> Acetonitrile [manufactured by FUJIFILM Wako Pure Chemical Industries, Ltd.] <δd=15.3, δp=18.0, δh=6.1> 1-methyl-2-pyrrolidone [manufactured by Mitsubishi Chemical Corporation] <δd=18.0, δp=12.3, δh=7.2> (Aprotic solvents) Dimethyl sulfoxide [manufactured by FUJIFILM Wako Pure Chemical Industries, Ltd.] <δd=18.4, δp=16.4, δh=10.2> γ-butyrolactone [manufactured by FUJIFILM Wako Pure Chemical Industries, Ltd.] <δd=18.0 , δp = 16.6, δh = 7.4> (Organic amines) Monoethanolamine [manufactured by Nippon Shokubai Co., Ltd.] <δd = 17.0, δp = 15.5, δh = 21.0> 2-(methylamino)ethanol [manufactured by Nippon Nyukazai Co., Ltd., amino alcohol MMA] <δd = 16.8, δp = 8.7, δh = 16.4> N-methyldiethanolamine [manufactured by Nippon Nyukazai Co., Ltd., amino alcohol MDA] <δd = 16.8, δp = 8.3, δh = 17.6>

[0059] [Hansen Solubility Parameter Values] The Hansen Solubility Parameter values ​​(HSP) of mixed solvents consisting of nitrogen-containing aprotic polar solvents and organic amines are shown in Table 1. The HSP values ​​were calculated using the following formula. In formula (1), δd, δp, and δh are parameters specific to the compound, where δd is the energy due to intermolecular dispersion forces, δp is the energy due to intermolecular dipole interactions, and δh is the energy due to intermolecular hydrogen bonds. In the case of a mixed solvent of two or more types, each parameter value (δd, δp, δh) can be calculated as a weighted average as shown in formula (2), and the δd, δp, and δh of the mixed solvent calculated by formula (2) were applied to formula (1) to calculate the HSP value of the mixed solvent. φ1 and φ2 in formula (2) are the volume fractions of each compound.

[0060] 2. Evaluation of the Cleaning Compositions of Examples 1 to 8 and Comparative Examples 1 to 6 The prepared cleaning compositions of Examples 1 to 8 and Comparative Examples 1 to 6 were evaluated as follows.

[0061] [Evaluation of Cleaning Properties (Adhesive Removability)] (Test Piece) A Si substrate (wafer) having an adhesive (adhesive layer) cut into a 2 cm square was used as a test piece. A polyimide adhesive was used as the adhesive. The adhesive layer was formed by uniformly coating the adhesive over the entire surface of the Si substrate (wafer), subjecting it to heat treatment at 80°C for 5 minutes, and then further heat treatment at 250°C for 5 minutes. The film thickness of the adhesive layer after heat treatment was 30 μm. (Cleaning Test) 50 mL of each of the cleaning compositions of Examples 1 to 8 and Comparative Examples 1 to 6 was added to a 100 mL beaker and heated to 50°C. The test piece was then immersed in the cleaning composition at 50°C for 15 minutes. The test piece was then removed from the cleaning composition and rinsed with a rinse agent (isopropyl alcohol, IPA, manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.) for 30 seconds at room temperature, followed by air drying. (Evaluation of Cleaning Ability) After the test pieces were visually inspected for the presence or absence of adhesive residue on them after cleaning and drying, the surface of the test pieces after the cleaning test was subjected to X-ray photoelectron spectroscopy (ESCA) (PHI Quantera SXM, manufactured by ULVAC-PHI, Inc.) to calculate the carbon / silicon ratio (C 1s / Si 2p), and the ratio was expressed as a relative value, with the carbon / silicon ratio of a Si substrate (mirror wafer) on which no adhesive was applied being set at 100. The results are shown in Table 1. The smaller the value, the better the cleaning ability can be evaluated. Note that in Comparative Examples 3 and 6, adhesive residue was visually confirmed on the Si substrate (wafer), so residue evaluation by ESCA was not performed, and therefore these are indicated as "x" in Table 1.

[0062] [Evaluation of Damage to Al Substrates] (Test Piece) To evaluate damage to Al electrodes formed on Si substrates, pure Al substrates measuring 20 mm x 50 mm (0.8 mm thick) were used as test pieces. (Damage Evaluation) The weight of each pure Al substrate was precisely measured using a precision balance, and as shown in the cleaning test above, it was immersed in 50 mL of each of the cleaning compositions of Examples 1 to 8 and Comparative Examples 1 to 6 at 50°C for 15 minutes. The test piece was then removed from the cleaning composition, rinsed with a rinse agent (IPA) for 30 seconds at room temperature, and then air-dried. The weight of the dried Al substrate was precisely measured using a precision balance, and the amount of Al substrate etching was calculated from the difference in weight between the substrate before and after immersion in the cleaning composition. Evaluation was based on the following criteria. As a result, the damage to Al substrates of Examples 1 to 8 and Comparative Examples 1 to 6 was rated A. (Evaluation criteria) A: Weight difference less than 0.1 mg (Good: Almost no damage observed) B: Weight difference 0.1 mg or more but less than 0.5 mg C: Weight difference 0.5 mg or more (Poor: Damage observed)

[0063]

[0064] As shown in Table 1, the cleaning compositions of Examples 1 to 8 were superior in removing adhesive residue compared to Comparative Examples 1 to 6. Furthermore, as described above, the cleaning compositions of Examples 1 to 8 hardly caused any damage to Al substrates, which suggests that they can suppress damage to Al electrodes.

[0065] According to the present disclosure, a cleaning composition having excellent removability of adhesives used in wafer processing can be provided. Furthermore, use of the cleaning composition of the present disclosure can improve productivity of semiconductor substrates.

[0066] REFERENCE SIGNS LIST 1 Fixing member 2 Wafer processing adhesive 2a Residue of wafer processing adhesive 3 Wafer 3a Polished / processed surface of wafer

Claims

1. A cleaning composition for removing residual wafer processing adhesive from wafers, comprising a nitrogen-containing aprotic polar solvent (component A) having 2 to 10 carbon atoms and an organic amine (component B), wherein component A is a nitrile compound, and the Hansen solubility parameter value of the mixed solvent consisting of components A and B is 20.0 to 26.

0.

2. A cleaning composition for wafer processing according to claim 1, wherein the content of component A is 50.0 mass % or more and 99.9 mass % or less.

3. A cleaning composition for wafer processing according to claim 1 or 2, wherein component B comprises a compound represented by the following formula (I): In the above formula (I), R １ represents a linear alkanol group having 2 to 4 carbon atoms, and R ２ represents a linear alkanol group having 2 to 4 carbon atoms, a methyl group, or a hydrogen atom; R ３ represents a methyl group or a hydrogen atom.

4. The cleaning composition for wafer processing according to any one of claims 1 to 3, wherein component B is at least one selected from monoethanolamine and 2-(methylamino)ethanol.

5. A cleaning composition for wafer processing according to any one of claims 1 to 4, wherein the content of component B is 0.1 mass % or more and 50.0 mass % or less.

6. A cleaning composition for wafer processing according to any one of claims 1 to 5, wherein the mass ratio B / A of component B to component A is 0.001 or more and 1 or less.

7. A cleaning composition for wafer processing according to any one of claims 1 to 6, wherein the cleaning composition for wafer processing does not contain water or contains water in an amount of 5 mass % or less.

8. A cleaning method for removing a wafer processing adhesive from a wafer to which the adhesive has adhered, the method comprising a cleaning step of cleaning the wafer to which the adhesive has adhered using a wafer processing cleaning composition according to any one of claims 1 to 7.

9. The wafer cleaning method according to claim 8, wherein the cleaning step is a step of immersing the wafer having the adhesive adhered thereto in the cleaning composition at a temperature of 50°C or higher and 100°C or lower.

10. A method for manufacturing a semiconductor substrate, comprising: (1) bonding a wafer to a fixing member with an adhesive; (2) polishing the backside of the wafer's surface bonded to the fixing member; (3) processing the polished surface of the wafer; (4) separating the processed wafer from the fixing member; and (5) removing any adhesive remaining on the separated wafer with a cleaning agent, wherein the cleaning agent is a cleaning agent composition containing a nitrogen-containing aprotic polar solvent having 2 to 10 carbon atoms (component A) and an organic amine (component B), wherein component A is a nitrile compound, and the mixed solvent consisting of components A and B has a Hansen solubility parameter value of 20.0 to 26.

0.

11. The method for producing a semiconductor substrate according to claim 10, wherein the content of component A in the cleaning composition is 50.0% by mass or more and 99.9% by mass or less.

12. An adhesive remover for removing wafer processing adhesive remaining on a wafer, comprising a nitrogen-containing aprotic polar solvent (component A) having 2 to 10 carbon atoms and an organic amine (component B), wherein component A is a nitrile compound, and the Hansen solubility parameter value of the mixed solvent consisting of components A and B is 20.0 to 26.0.

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