Flow monitoring and distribution control via showerhead flow distribution devices

Abstract

A first flow distribution device, to be disposed in a body or a stem of a showerhead of a substrate processing system, includes: a pair of electrodes; and an intermediate layer disposed between the pair of electrodes and comprising an electroactive polymer that changes state based on a voltage applied to the pair of electrodes. The pair of electrodes and the intermediate layer are collectively implemented as a baffle plate affecting flow of a substance through the showerhead.

Description

FLOW MONITORING AND DISTRIBUTION CONTROL VIA SHOWERHEAD FLOW DISTRIBUTION DEVICESCROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of U.S. Provisional Application No. 63 / 560,149, filed on March 1 , 2024. The entire disclosure of the application referenced above is incorporated herein by reference.FIELD

[0002] The present disclosure relates to flow distribution and monitoring through showerheads of substrate processing systems.BACKGROUND

[0003] The background description provided here is for the purpose of generally presenting the context of the disclosure. Work of the presently named inventors, to the extent it is described in this background section, as well as aspects of the description that may not otherwise qualify as prior art at the time of filing, are neither expressly nor impliedly admitted as prior art against the present disclosure.

[0004] A process chamber of a substrate processing system typically includes a plurality of process stations to perform deposition, etching, and other treatments of substrates such as semiconductor wafers. For example, deposition may be performed to deposit conductive film, dielectric film, or other types of film using chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), atomic layer deposition (ALD), plasma enhance ALD (PEALD), and / or other deposition processes. As an example, etching may be performed to remove material from one or more layers and include atomic layer etching (ALE), high aspect ratio (HAR) etching, plasma etching, and / or other etch processes. During deposition, a substrate is arranged on a substrate support (e.g., a pedestal) and one or more precursor gases may be supplied to a process chamber using a gas distribution device (e.g., a showerhead) during one or more process steps. In a PECVD or PEALD process, plasma is used to activate chemical reactions within the process chamber during deposition. Additional examples of processes that may be performed on a substrate include, but are not limited to, dielectric etching, chemical etching, plasma etching, reactive ion etching, and cleaningprocesses. During the deposition and etching processes, gas mixtures are introduced into the process chamber via showerheads, and plasma is struck to activate chemical reactions. During the cleaning processes, gases may also be introduced via the showerheads.SUMMARY

[0005] A first flow distribution device to be disposed in a body or a stem of a showerhead of a substrate processing system is disclosed. The first flow distribution device includes: a pair of electrodes; and an intermediate layer disposed between the pair of electrodes and comprising an electroactive polymer that changes state based on a voltage applied to the pair of electrodes. The pair of electrodes and the intermediate layer are collectively implemented as a baffle plate affecting flow of a substance through the showerhead.

[0006] In other features, the baffle plate includes holes through which the substance flows. In other features, the intermediate layer changes in at least one of shape, size, and tilt angle based on the voltage applied to the pair of electrodes. In other features, the baffle plate is circular shaped.

[0007] In other features, the intermediate layer includes at least one of ethylene chlorotrifluoroethylene, ethylene tetrafluoroethylene, polyvinylidene fluoride, fluorinated ethylene propylene, poly-fluoroalkyl, and polytetrafluoroethylene. In other features, the intermediate layer includes a fluorinated material. In other features, the intermediate layer includes a non-polyfluoroalkyl substance. In other features, the intermediate layer includes a material that is non-reactive to a fluorine species while also being a non- polyfluoroalkyl substance. In other features, the intermediate layer includes at least one of i) a fluoropolymer, ii) a non-polyfluoroalkyl substance fluoropolymer, and iii) a silicon- based polymer.

[0008] In other features, the baffle plate includes only a single layer formed of an electroactive polymer. In other features, the baffle plate includes different layers each of which formed of an electroactive polymer.

[0009] In other features, a flow distribution assembly is disclosed and includes: the first flow distribution device; and a second flow distribution device. In other features, the second flow distribution device is disposed radially outward of the first flow distribution device. In other features, the second flow distribution device is disposed radially inwardof the first flow distribution device. In other features, the second flow distribution device is disposed radially upstream from the first flow distribution device. In other features, the second flow distribution device is disposed radially downstream from the first flow distribution device. In other features, the first flow distribution device includes first holes. The second flow distribution device includes second holes.

[0010] In other features, the second flow distribution device includes: a second pair of electrodes; and a second intermediate layer disposed between the pair of electrodes and changing state based on a voltage applied to the second pair of electrodes. In other features, a gap exists between the first flow distribution device and the second flow distribution device. In other features, the gap is circular shaped.

[0011] A flow distribution control system is disclosed and includes: a first showerhead having a stem that receives a processing substance; a first flow distribution device disposed in the first showerhead or the stem; and a controller to at least one of i) apply a first voltage to the first flow distribution device to adjust the flow distribution of the processing substance through the first showerhead, and ii) detect a second voltage across the first flow distribution device, and based on the first voltage, determine a flow rate of the processing substance through the first showerhead.

[0012] In other features, the first flow distribution device adjusts flow distribution of the processing fluid through the first showerhead. In other features, the first voltage is a same voltage and the second voltage. In other features, the first voltage is different than the second voltage.

[0013] In other features, the first flow distribution device includes electrodes to apply the first voltage across the first flow distribution device to change a size of the first flow distribution device. In other features, the first flow distribution device includes an electrode to apply a third voltage to the first flow distribution device to adjust tilt of the first flow distribution device. In other features, the first flow distribution device is formed of an electroactive polymer.

[0014] In other features, the first flow distribution device is formed of at least one of ethylene chlorotrifluoroethylene, ethylene tetrafluoroethylene, polyvinylidene fluoride, fluorinated ethylene propylene, poly-fluoroalkyl, and polytetrafluoroethylene. In other features, the first flow distribution device is formed of a fluorinated material. In other features, the first flow distribution device is formed of a non-polyfluoroalkyl substance.

[0015] In other features, the first flow distribution device is formed of a material that is non-reactive to a fluorine species while also being a non-polyfluoroalkyl substance. In other features, the first flow distribution device is formed of at least one of i) a fluoropolymer, ii) a non-polyfluoroalkyl substance fluoropolymer, and iii) a silicon-based polymer.

[0016] In other features, the first flow distribution device includes only a single layer formed of an electroactive polymer. In other features, the first flow distribution device includes different layers each of which formed of an electroactive polymer.

[0017] In other features, the flow distribution control system further includes: an analog-to-digital circuit configured to detect a second voltage across the first flow distribution device. The controller controls a state of a valve based on the second voltage.

[0018] In other features, the flow distribution control system further includes: an analog-to-digital circuit configured to detect a second voltage across the first flow distribution device. The controller adjusts the first voltage based on the second voltage.

[0019] In other features, the first flow distribution device includes holes that change in size based on change in the first voltage. In other features, the flow distribution control system further includes a second flow distribution device disposed in the first showerhead or the stem. The controller applies a second voltage to the second flow distribution device to adjust the flow distribution of the processing substance through the first showerhead. The second voltage is generated independent of the first voltage.

[0020] In other features, the second flow distribution device is upstream from the first flow distribution device. In other features, the second flow distribution device is disposed radially inward of the first flow distribution device.

[0021] In other features, the flow distribution control system further includes processing stations comprising respectively showerheads. The showerheads include the first showerhead. The showerheads include respectively flow distribution devices. The flow distribution devices include the first flow distribution device.

[0022] In other features, the controller adjusts the first voltage applied to the first flow distribution device to match flow through the first showerhead to flow through one or more of other showerheads of the plurality of showerheads.

[0023] In other features, a method is disclosed and includes: measuring substance flow rates at flow distribution devices, where the flow distribution devices affect substance flow through showerheads respectively in substrate processing stations; determining whether a difference between the substance flow rates is within a rate tolerance range of each other; and in response to a difference between the substance flow rates being outside the rate tolerance range, at least one of i) preventing continued substrate processing, ii) reporting the difference between the substance flow rates is outside the rate tolerance range, and iii) performing a troubleshooting procedure.

[0024] In other features, the method further includes: detecting voltages at the flow distribution devices; and determining the substance flow rates through the showerheads based on the voltages.

[0025] In other features, the method further includes: determining amounts of change in the voltages; determining a difference between the changes in voltages; determining whether the difference between the changes in voltages is acceptable; and in response to the difference between the changes in voltages being unacceptable, at least one of i) preventing continued substrate processing, ii) reporting the unacceptable difference between the changes in voltages, and iii) performing a troubleshooting procedure.

[0026] In other features, the method further includes: estimating or measuring thicknesses of film layers deposited on substrates in the plurality of substrate processing stations; determining differences between first thicknesses of a first film layer of a first one of the substrates and second thicknesses of a second film layer of a second one of the substrates; determining whether one or more of the differences between the first thicknesses and the second thicknesses is acceptable; and in response to the one or more of the differences being unacceptable, at least one of i) preventing continued substrate processing, ii) reporting the one or more unacceptable differences, and iii) performing a troubleshooting procedure.

[0027] In other features, a flow distribution method is disclosed and includes: detecting voltages at flow distribution devices, where the flow distribution devices adjust substance flow through showerheads respectively in substrate processing stations; determining substance flow rates through the showerheads based on the voltages; determining whether a difference between the substance flow rates is acceptable; and in response to a difference between the substance flow rates being unacceptable, adjusting substance flow through at least one of the showerheads.

[0028] In other features, the flow distribution method further includes adjusting substance flow through one or more valves to adjust the substance flow through the at least one of the showerheads.

[0029] In other features, the flow distribution method further includes, in response to a difference between the substance flow rates being unacceptable, adjusting positions of one or more throttle plates of the one or more valves to adjust substance flow through the one or more valves.

[0030] In other features, the flow distribution method further includes: determining amounts of change in the voltages; determining a difference between the changes in voltages; determining whether the difference between the changes in voltages is acceptable; and in response to a difference between the substance flow rates being unacceptable, at least one of i) adjusting the substance flow through the one or more valves, and ii) adjusting the voltages applied to the one or more of the flow distribution devices.

[0031] In other features, the flow distribution method further includes adjusting voltages applied to one or more of the flow distribution devices to adjust the substance flow through the at least one of the showerheads.

[0032] In other features, the flow distribution method further includes, in response to a difference between the substance flow rates being unacceptable, adjusting the voltages applied to the one or more of the flow distribution devices.

[0033] In other features, the flow distribution method further includes: estimating or measuring thicknesses of film layers deposited on substrates in the substrate processing stations; determining differences between first thicknesses of a first film layer of a first one of the substrates and second thicknesses of a second film layer of a second one of the substrates; determining whether one or more of the differences between the first thicknesses and the second thicknesses is acceptable; and in response to a difference between the substance flow rates being unacceptable, at least one of i) adjusting the substance flow through one or more valves, and ii) adjusting the voltages applied to one or more of the flow distribution devices.

[0034] Further areas of applicability of the present disclosure will become apparent from the detailed description, the claims and the drawings. The detailed description andspecific examples are intended for purposes of illustration only and are not intended to limit the scope of the disclosure.BRIEF DESCRIPTION OF THE DRAWINGS

[0035] The present disclosure will become more fully understood from the detailed description and the accompanying drawings, wherein:

[0036] FIG. 1 is a functional block diagram of a portion of an example substrate processing system including stations having showerheads with flow distribution devices in accordance with the present disclosure;

[0037] FIG. 2 is a functional block diagram of an example flow distribution control system in accordance with the present disclosure;

[0038] FIG. 3 is a functional block diagram of an example system controller and side cross-sectional view of a showerhead including a temperature sensor and a flow distribution device in accordance with the present disclosure;

[0039] FIG. 4 is a side cross-sectional view of an example showerhead having an upstream flow distribution device and a downstream flow distribution device in accordance with the present disclosure;

[0040] FIG. 5 is a side cross-sectional view of an example showerhead including a flow distribution device having electrodes and being disposed on a support pin in accordance with the present disclosure;

[0041] FIG. 6 is a perspective view of an example flow distribution device having electrodes for size variation and holes for flow of a substance in accordance with the present disclosure;

[0042] FIG. 7A is a side cross-sectional view of an example flow distribution device having a single electrode for tilt control in accordance with the present disclosure;

[0043] FIG. 7B is a top view of the flow distribution device of FIG. 7A;

[0044] FIG. 8A is a side cross-sectional view of another example flow distribution device having electrodes for size variation and another electrode for tilt control in accordance with the present disclosure;

[0045] FIG. 8B is a top view of the flow distribution device of FIG. 8A;

[0046] FIG. 9 is a side cross-sectional view of another example flow distribution device including electrodes for size variation and multiple different outer layers for tilt control in accordance with the present disclosure;

[0047] FIG. 10 is a side cross sectional view of another example flow distribution device including electrodes for size variation and two different layers for tilt control in accordance with the present disclosure;

[0048] FIG. 11 is a top view of an example solid flow distribution device illustrating change in size radially in accordance with the present disclosure;

[0049] FIG. 12 is a top view of an example flow distribution device with holes and changing in size in accordance with the present disclosure;

[0050] FIG. 13 is a top view of an example implementation including multiple independently controlled flow distribution devices in accordance with the present disclosure;

[0051] FIG. 14 is a perspective view an example cupped flow distribution device changing in size in accordance with the present disclosure;

[0052] FIG. 15 is a thickness profile diagram of thicknesses of a deposited film layer of a substrate;

[0053] FIG. 16 is an average radial thickness plot illustrating average radial thicknesses of the film layer of FIG. 15;

[0054] FIG. 17 is a residual thickness plot illustrating thicknesses associated with differences between the plots of FIGs. 15 and 16;

[0055] FIG. 18 is another residual thickness plot, which is a sum of the plots of FIGs. 19 and 20;

[0056] FIG. 19 is a dipole plot illustrating thicknesses of a film layer of a substrate when a flow distribution device is tilted about a pitch axis;

[0057] FIG. 20 is a quadrupole plot illustrating thicknesses of a film layer of a substrate when a flow distribution device is tiled about pitch and yaw axes;

[0058] FIG. 21 illustrates an example health monitoring, troubleshooting and maintenance method in accordance with the present disclosure; and

[0059] FIG. 22 illustrates an example flow distribution control method in accordance with the present disclosure.

[0060] In the drawings, reference numbers may be reused to identify similar and / or identical elements.DETAILED DESCRIPTION

[0061] Substrate processing tools can include a single station module (SSM) or a quad station module (QSM). Gas flow to the processing stations of the modules, measured in standard liters per minute (SLM), can be reported by upstream mass flow controllers (MFCs). In a QSM, the mass flow controllers typically control flow of gases from respective gas flow paths to a manifold (or plenum), which then directs the gases to showerheads of the four stations. No flow control and / or distribution devices exist at or downstream of the manifold, in stems of the showerheads, and / or in the showerheads of traditional processing systems. Thus, traditionally, flow rates of gases to and through each of the showerheads and into the processing stations were not monitored, detected, and / or verified. Traditional processing systems are not configured to determine flow rates to each station and to determine differences in flow to each of the stations.

[0062] Traditionally, the total flow delivery and precursor dosage to each processing station of a QSM is assumed to be split evenly to the four stations. For example, if 10,000 standard cubic centimeters per minute (seem) is supplied to the QSM, it is assumed that each of the four stations received 2500 seem. However, there is typically a flow imbalance between the stations and in more extreme cases, there can be a negative pressure in one of the stations leading to significantly less flow in one or more showerheads. As an example, fluid pipelines and / or holes in fluid flow components (e.g., showerheads, baffle plates, etc.) may be partially clogged or asymmetric, which can cause different flow rates. The term “fluid” refers to both a liquid or a gas. This results in process conditions within one or more of the stations to be outside target conditions of a preselected recipe. For this reason, there can be poor station-to-station matching of on-wafer (or substrate) performance and in worst cases damage can occur to hardware requiring tool maintenance and / or part replacement. Poor station-to-station matching can negatively affect quality control, increase chances of hardware damage, and reduce throughput. Traditional systems do not perform real time monitoring and / or health checks of hardware associated with fluid flow.

[0063] The examples set forth herein implement in-chamber flow monitoring and control and, more specifically, in-showerhead flow monitoring and control. The flow monitoring and control may be implemented in the stem of each showerhead and / or in body of each showerhead. One or more flow distribution devices may be included in the stem and / or body of each showerhead. The stem of each showerhead refers to a channel through which substances flow to the body of that showerhead. The stem is connected to the body of that showerhead and may be cylindrically shaped. Signal lines may also be passed through the channel. The flow distribution devices may be used for flow rate monitoring and / or for adjusting flow distribution radially and azimuthally. The radial and azimuthal flow distribution may be adjusted uniformly across a flow distribution device and / or a faceplate of a showerhead. Azimuthal flow refers to any flow not caused by radial components, as further described below. The flow distribution devices may be configured to change in size to alter radial flow distribution of substances. As used herein, the term “substance” may refer to a fluid, such as a liquid or a gas, and / or other species able to flow through a showerhead. The flow distribution devices may change in thickness and diameter. These changes may be uniform across the flow distribution devices. Tilt angles of the flow distribution devices may also or alternatively be adjusted to alter azimuthal flow of substances.

[0064] The disclosed examples may be implemented on SSMs and QSMs to monitor and control substance flow to stations to ensure quality control. The flow distribution devices may be utilized as sensors to detect mechanical pressure (or force) of inbound substance(s) in showerheads. The flow distribution devices provide voltage output signals proportional to changes in mass flow and the substance flow rates. The flow distribution devices are formed of materials that are designed for environments within processing chambers and are resistant to in chamber reactive species including atomic fluorine F, fluorine molecules F2, and / or other reactive species.

[0065] In some embodiments, the flow distribution devices are implemented as baffle plates within showerheads. In other embodiments, the flow distribution devices are implemented as small probes upstream from the baffle plates of showerheads. The flow distribution devices are configured to not impede and / or otherwise compromise process flow and yield.

[0066] The substance distribution devices and / or portions thereof may be formed of an electroactive polymer, such as ethylene chlorotrifluoroethylene (ECTFE), ethylenetetrafluoroethylene (ETFE), polyvinylidene fluoride (PVDF), fluorinated ethylene propylene (FEP), poly-fluoroalkyl (PFA), polytetrafluoroethylene (PTFE), and / or other electroactive polymer that is suitable for the working environment and changes in size when a voltage is applied. The substance distribution devices may be formed of a fluorinated material (non-polyfluoroalkyl substances (PFAS)) thus being resistant to atomic and molecular fluorine amongst other less reactive species present in substrate processes. The materials used can be non-reactive to F species while also being non- PFASs. The term “PFAS” does not encompass all perfluorinated substances, there are some fluorine-based materials that can be used to meet PFAS free requirements. The substance distribution devices may be formed of i) fluoropolymers including PVDF, PTFE, and / or other PFAS, ii) non-PFAS fluoropolymers, and / or iii) silicon-based polymers. The materials used to form the flow distribution devices may have electroactive properties for tracking flow rates and for changing flow distributions. In some embodiments, the materials used are able to handle temperatures greater than or equal to 200°C. In some embodiments, the materials used are able to handle temperatures up to 300°C. In some embodiments, the materials used are able to handle temperatures greater than 300°C. In other embodiments, the materials used are able to handle temperatures up to 150°C. The materials used are non-reactive to process substances. The flow distribution devices may change in size as much as 250%.

[0067] The examples disclosed herein enable independent control of flow to each station as well as control of total flow to a module. Flow rates may be adjusted such that the flow rates to the stations of a QSM match. The flow rates match when the flow rates are equal to each other or are within set tolerance ranges of each other (e.g., within ±0.1 -5% of each other). Flow rates to stations of a QSM may also be adjusted to not match (i.e., not be equal and / or to be outside of a set tolerance range of each other) when it is desirable for one or more stations to have higher flow rates than one or more other stations. When total flow does not match a target total flow, flow rates to one or more stations may be adjusted to compensate for the difference such that the total flow matches the target total flow. As an example, this compensation may be performed when an upstream mass flow controller (MFC) is faulty and / or performance of the MFC is degraded causing unequal flow to the showerheads of the stations. The stated control of flow through each showerhead of each station enables chamber-to-chamber matching and “lights out fab” operation (i.e., autonomous operation with controllers androbots without human intervention). This will improve yield without compromising and potentially improving throughput. The stated operation also enhances machine availability for different processes and chemistries and allows for improved cleans by ensuring matched station flows.

[0068] It is typically desirable for semiconductor deposition tools to exhibit on wafer deposition uniformity. However, a single tool can often run multiple process recipes that exhibit different radial thickness profiles, even when hardware such as showerhead properties are fixed. This can necessitate the development of showerheads to reduce overall nonuniformity across recipes, which entails a significant amount of engineering development time and costs and associated long lead times associated with fabrication. The design of a showerhead includes determining hole sizes, hole size density, hole number, whether to include a baffle plate, number of baffle plate holes, baffle plate radius, baffle plate angle, plenum dimensions, etc. Controlling gas flow through a showerhead can be difficult and can have different associated requirements for different recipes. Substance dynamic simulations are carried out for the designs under development. Despite these efforts, deposition uniformity across a substrate is typically not achieved for single process because the showerhead is designed to support multiple other processes. Moreover, each time a new tool or process recipe is developed, the showerhead needs to undergo another redesign process, which again involves substantial development time and costs.

[0069] The examples disclosed herein allow for adjustment of flow distribution in showerheads enabling uniformity across recipes and minimizing the need for showerhead redesigns. Radial and azimuthal flow distribution control is provided. The flow distribution device materials exhibit elastomer properties allowing the flow distribution devices to change over twice in size with applied voltage. Through a piezo effect, mass flow incident on a flow distribution device (e.g., a variable baffle plate) induces a potential that is indicative of a relative flow rate of a substance through a corresponding showerhead. A variable baffle plate refers to a baffle plate that is configured to change in size and / or in tilt angle by changing a voltage applied to one or more electrodes of the baffle plate. The examples enable increased substance flow near an outer peripheral edges of showerheads. The flow distribution devices disclosed herein, which are formed of an electroactive polymer material and perform as baffle plates, provide voltage variations due to changes in mass flow to indicate relative flow rates across stations of a QSM. In an embodiment, the flow distribution devices aredesigned to account for deposited film thickness issues in a center region of a substrate, by including i) multiple flow distribution devices, and / or ii) a flow distribution device with a large opening (or hole) in the flow distribution device. The large hole may be located in a center of the flow distribution device.

[0070] FIG. 1 shows a portion 100 of a substrate processing system (or tool) including processing stations 101 having showerheads 102 with flow distribution devices 103. The flow distribution devices 103 are shown as variable baffle plates and may be configured as any of the flow distribution devices and / or variable baffle plates disclosed herein. Each of the showerheads 102 may include one or more flow distribution devices. The flow distribution devices are able to change in size and / or tilt angle by changing a voltage applied to one or more electrodes of each of the flow distribution devices. The voltages may be applied directly to the flow distribution devices or to one or more electrodes mounted on and / or in contact with the flow distribution devices, as further described below. A system controller 105 selects and controls application of the voltages. This control may be based on detected flow (or substance pressure) on the flow distribution devices as monitored by the system controller 105 via analog-to-digital (A / D) sampling circuits, which are shown in FIG. 2. The A / D sampling circuits are connected to the flow distribution devices and detect changes in voltages potentials across the flow distribution devices due to change in substance flow and thus mechanical pressure, as further described below. The A / D sampling circuits may be an integral part of the system controller 105 or may be implemented as one or more circuits separate from the system controller 105, as shown in FIG. 2. In an embodiment, the A / D sampling circuits are implemented as headless oscilloscopes that i) sample voltage potentials across the flow distribution devices, and ii) detect changes in the voltage potentials due to substance flow rate variation.

[0071] The substrate processing system includes a process chamber 106 having multiple processing stations 101 , two processing stations are shown in FIG. 1 , however, the process chamber 106 may have four processing stations and be a QSM. The processing stations 101 include respective substrate supports 108, such as electrostatic chucks, and the showerheads 102. The substrate supports 108 may be referred to as pedestals. The substrate supports 108 may include respective lift pin actuator assemblies 110. The lift pin actuator assemblies include lift pins 112 that are actuated to lift substrates (e.g., substrates 114) on and off of the substrate supports 108 and substrate indexing arms (or transfer paddles) 113.

[0072] Each of the processing stations 101 includes upper and lower electrodes. The showerheads 102 may be implemented as or include the upper electrodes. The substrate supports 108 may be implemented as or include the lower electrodes. The upper and lower electrodes may be implemented as radio frequency (RF) electrodes, bias electrodes, clamping electrodes and / or heating electrodes. For example, the upper electrodes may be implemented as the showerheads 102, which introduce and distribute gases in the processing stations. The showerheads 102 may include stem portions 116 including ends connected to top surfaces of the process chamber 106. The stems may include flow distribution devices, as further described below. The showerheads 102 are generally cylindrical and extend radially outward from opposite ends of the stem portions 116 at a location that is spaced from the top surface of the process chamber 106. Substrate facing surfaces of faceplates of the heads of the showerheads 102 include holes through which process or purge gas flows.

[0073] An RF generating system 120 generates and outputs RF voltages to the upper electrodes and the lower electrodes. For each of the processing stations 101 , one of the upper electrodes and the lower electrodes may be direct current (DC) grounded, alternating current (AC) grounded or at a floating potential. For example, the RF generating system 120 may be controlled by the system controller 105 and include one or more RF generators 122 (e.g., a capacitive coupled plasma RF power generator, a bias power generator, and / or other RF power generator) that generate RF voltages, which are fed by one or more matching and distribution networks 124 to the upper electrodes and / or the lower electrodes. The system controller 105 sets and adjusts frequencies of RF signals output from the RF generators 123, 125. The frequencies may be adjusted to adjust power distribution within and across the substrate supports. The system controller 105 may be connected to and / or include memory, which may store a chamber clean application for implementing cleaning processes disclosed herein.

[0074] As an example, a first RF generator 123, a second RF generator 125, a first RF matching network 127 and a second RF matching network 129 are shown. The first RF generator 123 and the first RF matching network 127 may provide a RF voltage or may simply connect the showerheads to a ground reference. The second RF generator 125 and the second RF matching network 129 may each or collectively be referred to as a power source and provide a RF / bias voltage to the substrate supports. In one embodiment, the first RF generator 123 and the first RF matching network 127 providepower that ionizes gas and drives plasma. In another embodiment, the second RF generator 125 and the second RF matching network 129 provide power that ionizes gas and drives plasma. One of the RF generators 123, 125 may be a high-power RF generator producing, for example, 6-10 kilowatts (kW) of power or more.

[0075] A gas delivery system 131 includes one or more substance sources 132-1 , 132-2,..., and 132-N (collectively substance sources 132), where N is an integer greater than zero. The substance sources 132 supply one or more precursors and substance mixtures thereof. The substance sources 132 may also supply etch gas, carrier gas and / or purge gas. The substance sources 132 are connected by valves 134-1 , 134-2, ..., and 134-N (collectively valves 134) and mass flow controllers 136-1 , 136-2, ..., and 136-N (collectively mass flow controllers 136) to a manifold and valve assembly 140. Outputs of the manifold and valve assembly 140 are fed respectively to the showerheads 102.

[0076] A valve 156 and pump 158 may be used to evacuate reactants from the process chamber 106. The system controller 105 may control components of the substrate processing system including controlling supplied RF power levels, pressures and flow rates of supplied gases, RF matching, etc. The system controller 105 controls states of the valve 156 and the pump 158. A robot 164 may be used to deliver substrates into and remove substrates from the processing stations 101. For example, the robot 164 may transfer substrates between the substrate supports and a load lock 166. The robot 164 may be controlled by the system controller 105. The system controller 105 may control operation of the load lock 166. The valves, gas and / or coolant pumps, power sources, RF generators, etc. may be referred to as actuators.

[0077] The substrate processing system further includes a power source 170 that may supply power to the system controller 105, the lift pin actuator assemblies 110 and motors 172. The motor 172 rotates a spindle 174 and move the spindle 174 and hub 148 in a Z direction (or vertically). The power source 170 may be controlled by the system controller 105. The system controller 105 may control supply of power from the power source 170 to the motors 172 and / or to the RF generating system 120.

[0078] The lift pin actuator assemblies 110 raise and lower the lift pins 112. The lift pin actuator assemblies 110 may include electrical and / or pneumatic actuators for adjusting positions of the lift pins 112. One of the motors 172 rotates a spindle 174, which is connected to and thus rotates the hub 148 about a vertical center axis 175. The hub148 is connected to either the substrate indexing arms 113, which extend laterally from the hub 148. Top and / or bottom planar surfaces of the substrate indexing arms 113 may be parallel to bottom planar surfaces of the showerheads 102 and / or top planar surfaces of the substrate supports 108 when attached to the hub.

[0079] During substrate processing, the substrate indexing arms 113 are rotated to position the substrates 114 over the substrate supports 108. The lift pins 112 are raised to lift the substrates 114 off the substrate indexing arms 113 and the substrate indexing arms 113 are rotated out of the way to stowed positions. The lift pins 112 are then lowered to set the substrates 114 on the substrate supports 108. One or more processing operations (e.g., etch, deposition, or clean operation) are then performed on the substrates 114. Subsequently, the lift pins 112 are raised to lift the substrates off of the substrate supports 108 and the substrate indexing arms 113 are rotated to be between the substrate supports 108 and the substrates 114. The lift pins 112 are then lowered to set the substrates 114 back on the substrate indexing arms 113. This process may be repeated and the substrates 114 may be moved from processing station-to-processing station in this manner. Each of the processing stations 101 may perform a different set of processing operations.

[0080] The lift pins 112 may also be used to allow delivery and removal of the substrates 114 from the process chamber 106 using a robot arm of the robot 164. Upper ends of the lift pins 112 may be located flush with or below upper surfaces of the substrate supports 108 when stowed. During substrate delivery, removal and / or transfer, the lift pins are raised relative to the upper surfaces of the substrate supports 108 to lift the substrates 114 and provide clearance between the substrates 114 and the substrate supports 108. The clearance between the substrates 114 and the substrate supports 108 allows (i) an end effector of the robot arm to be inserted or removed, and (ii) the substrate transfer paddles 113 to be moved between the substrates 114 and the substrate supports 108.

[0081] FIG. 2 shows a flow distribution control system 200 that includes multiple processing stations 202, which may be included as part of the same tool and / or located in the same processing chamber. The processing stations 202 may represent the processing stations of the substrate processing system of FIG. 1 . Each of the substrate processing stations includes a showerhead 204 and a substrate support 206. The showerheads 204 include one or more respective flow distribution devices, such as theflow distribution devices 208, which may be configured as any of the flow distribution devices disclosed herein. Although the flow distribution devices are shown as variable baffle plates within the showerheads 204, the flow distribution devices may be variable plates within stems 209 of the showerheads 204. A manifold and valve assembly 210, including local throttle valves 212, is used to control flow of substances (e.g., processing gases) to each of the showerheads 204. Conduits 213 extend from the manifold and valve assembly 210 and / or throttle valves 212 to the stems 209. The manifold and valve assembly 210 may receive substances from a substance delivery system, such as the gas delivery system 131 of FIG. 1 .

[0082] The flow distribution control system 200 further includes a system controller 214, A / D sampling circuits 216, and a direct current (DC) power source 218. The A / D sampling circuits 216 may include RF filters 220, such as low pass filters. The RF filters 220 prevent passage of RF frequencies and permit passage of low frequencies, such as that associated with changes in voltage potentials due to changes in substance flow rates. The A / D sampling circuits 216 may also include A / D converters and / or other processing circuit components.

[0083] Output signals generated by of the A / D sampling circuits 216 are provided to the system controller 214. The system controller 214 adjusts states (e.g., positions of throttle plates) of the throttle valves 212 based on the output signals. The output signals are indicative of voltages across the flow distribution devices 208. The system controller 214 i) monitors the instantaneous voltages across the flow distribution devices 208 and changes in the voltages across the flow distribution devices 208, and ii) adjusts the states (e.g., sizes, shapes and tilt angles) of the flow distribution devices 208 based on the instantaneous voltages and the changes in voltages. The applied voltages may be set by the system controller 214 and applied via the DC power source 218, as shown, or may be applied by the system controller 214. When applied by the system controller 214, power is supplied to the system controller 214, which then supplies DC voltages to the flow distribution devices 208.

[0084] FIG. 3 shows an example system controller 300 and a showerhead 302, which is disposed within a processing chamber 303. The system controller 300 may replace and / or be configured similarly as the system controllers 105 and 214 of FIGs. 1 -2. The system controller 300 includes a flow distribution controller 304, a temperature controller 306, a RF controller 308, and a pressure controller 310. The system controller300 may store collected data in a memory 312, such as states of one or more flow distribution devices (one flow distribution device 314 is shown in FIG. 3) including voltages across the flow distribution devices and determined changes in the voltage.

[0085] The showerhead 302 may include a temperature sensor 320 and the flow distribution device 314. The temperature sensor 320 may be a thermocouple disposed within a body of the showerhead 302. The flow distribution device 314 may be a variable baffle plate as shown or other flow distribution device disclosed herein. The state of the flow distribution device is controlled by the flow distribution controller 304, which controls a voltage applied across the flow distribution device 314 via one or more electrodes, examples of which are shown in FIGs. 5-10. In an embodiment, the flow distribution device 314 is supported by one or more support pins (one support pin 321 is shown). The support pin 321 may be supported by a faceplate 322 of the showerhead 302. The faceplate 322 includes holes for passage of substances.

[0086] The system controller 300 controls state of the flow distribution device 314 to control and adjust the radial and / or azimuthal flow of substances through the showerhead 302 and out the holes in the faceplate 322. The system controller 300 controls the state of the flow distribution device 314 by adjusting the size, shape, and / or tilt of the flow distribution device 314. This adjustment is accomplished by adjusting voltage(s) applied to one or more electrodes of the flow distribution device 314, as further described below. A shielded RF filter cable 323 may be connected to the flow distribution device 314 and routed through a stem 324 extending upward from the showerhead 302 similar to the routing of a wire 326 for the temperature sensor (or thermocouple) 320. Electrically conductive lead(s) of the shielded RF filter cable 323 are chemically sealed to processing substances flowing through the stem 324 and the showerhead 302. The conductive lead(s) of the shielded RF filter cable 323 are isolated from the showerhead 302, which may be grounded.

[0087] Although a single shielded RF filter cable 323 is shown applying a single voltage to the flow distribution device 314, more than one shielded RF filter cable may be supplying more than one voltage to the flow distribution device 314 to apply multiple voltages to different portions of the flow distribution device 314. Each shielded RF cable and / or conductive lead thereof may be connected to a respective electrode on the flow distribution device. This holds true for other flow distribution devices disclosed herein. The flow distribution device 314 may be replaced with multiple flow distribution deviceshaving one or more respective shielded RF filter cables. The shielded RF filter cable 323 may include one or more shielded conductive leads (or wires). This also holds true for other flow distribution devices disclosed herein.

[0088] The showerhead 302 may be configured for temperature adjustment. For example, the showerhead 302 may include a heater (e.g., a resistive heater), which may be controlled by the temperature controller 306. The temperature adjustment may be based on temperatures indicated by the temperature sensor 320.

[0089] The system controller 300 may control RF voltages applied to the showerhead 302 and / or a substrate support (e.g., one of the substrate supports 108, 206 of FIGs. 1 - 2) via a RF generating system (e.g., the RF generating system 120 of FIG. 1 ). The pressure controller 310 may control pressures of substances supplied to the showerhead 302 via a substance distribution system (e.g., the gas delivery system 131 of FIG. 1 ).

[0090] The showerhead 302 and the processing chamber 303 may correspond to a single processing station in a multi-station processing tool (e.g., a QSM). The system controller 300 may be configured to monitor substance flow rates, states of substance distribution devices, temperatures of showerheads, and / or other parameters of respective processing stations. The system controller 300 may adjust deposition times and / or other parameters in a plurality of stations based on monitored temperatures of the showerheads.

[0091] Deposition thickness may be directly correlated (e.g., linearly correlated) to showerhead temperatures and substance flow profiles. For example, as showerhead temperature increases, deposition thickness for a fixed deposition duration may also increase. Conversely, as a showerhead temperature decreases, deposition thickness for the same fixed deposition duration also decreases. In some examples, deposition thickness may decrease as a showerhead temperature increases and increase as a showerhead temperature decreases. Similarly, as substance flow rates increase, deposition thickness for the same fixed deposition duration may also increase. The system controller 300 determines and selectively adjusts the deposition time. This adjustment may be implemented to compensate for variations in showerhead temperature and / or substance flow rates and / or to achieve target deposition thicknesses of, for example, a film layer deposited on a substrate. The system controller 300 may determine the deposition time based on data that correlatesshowerhead temperature to deposition rates, one or more deposition thickness(es) for a baseline deposition time, etc. The data corresponds to showerhead compensation data stored in memory 312.

[0092] In one example, the stored data may comprise a lookup table that correlates a showerhead temperature, a substance flow rate, a voltage across the substance distribution device 314, and a change in a voltage across the substance distribution device 314 to a deposition rate, a deposition thickness, and a deposition time for a target deposition thickness. In another example, the stored data is a model or formula configured to determine a deposition time based on one or more inputs comprising, but not limited to, the showerhead temperature, a substance flow rate through the showerhead 302, and a state of the flow distribution device 314 as measured prior to the deposition step and a default or baseline deposition time. The system controller 300 may also control the showerhead temperature, state of the flow distribution device 314, and deposition time (or duration) to improve deposition uniformity.

[0093] FIG. 4 shows a showerhead 400 having an upstream flow distribution device 402 and a downstream flow distribution device 404. In an embodiment, one of the flow distribution devices 402, 404 is not included. The flow distribution device 402 may be supported on one or more support pins (one support pin 406 is shown). The support pin may be supported by a cross member 408. The flow distribution device 404 is supported by another one or more pins (one support pin 410 is shown), which extends upward from a faceplate 412 of the showerhead 400. The flow distribution devices 402, 404 may be tilted on the pins 406, 410. Voltages are applied to the flow distribution devices 402, 404 and detected across the flow distribution devices 402, 404 via shielded RF filter cables 420, 422, which may extend upward through a stem 424. Electrically conductive leads of the shielded RF filter cable 420, 422 are chemically sealed to processing substances flowing through the stem 424 and the showerhead 400. The conductive leads of the shielded RF filter cables 420, 422 are isolated from the showerhead 400, which may be grounded.

[0094] FIG. 5 shows a showerhead 500 including a flow distribution device 502 having electrodes 504, 506 and an intermediate layer 507 and being disposed on a support pin 508. An example of the flow distribution device 502 is shown in FIG. 6. The electrodes 504, 506 may cover all or portions of the upper and bottom surfaces of the intermediate layer 507. The electrodes 504, 506 may be disposed on, adhered to, chemicallybonded to, and / or otherwise be attached to the intermediate layer 507. The electrodes 504, 506 may be formed of a flexible and / or stretchable conductive material. The electrodes 504, 506, may be configured to maintain fixed dimensions or may be configured to change in size when the size of the intermediate layer 507 is changed.

[0095] The intermediate layer 507 may be formed of formed of an electroactive polymer, such as ECTFE, ETFE, PVDF, FEP, PFA, PTFE, and / or other electroactive polymer that is suitable for the working environment and changes in size when a voltage is applied. The electroactive polymer may be a piezoelectric type polymer. The intermediate layer 507 may be formed of a fluorinated material (non-PFAS). The materials used can be non-reactive to F species while also being non-PFASs. The intermediate layer 507 may be formed of i) fluoropolymers including PVDF, PTFE, and / or other PFAS, ii) non-PFAS fluoropolymers, and / or iii) silicon-based polymers. The materials used to form the intermediate layer 507 may have electroactive properties for tracking a flow rate and for changing flow distribution through the showerhead 500.

[0096] Dielectric elastomers exhibit high strain-stress properties as well as change shape when a sufficient voltage potential is applied. Acrylic and silicon elastomers have great strain properties (up to 400%) but are reactive to fluorine, which is commonly used for cleaning and etching and thus would need a protective layer to prevent degradation of the elastomers. Fluor elastomers, such as PVDF and ECTFE, exhibit 100-250% strain properties but are able to handle the operating environment.

[0097] FIG. 6 shows a flow distribution device 600 having electrodes 602, 604 and an intermediate layer 606. Voltage is applied across the electrodes 602, 604 to change size of the intermediate layer 606. The intermediate layer 606 may be formed of any of the materials stated above for the intermediate layer 507 of FIG. 5. Application of the voltage is represented by the power source 610, which is connected to the electrodes 602, 604. The electrodes 602, 604 and the intermediate layer 606 may include holes 612 for passage of a substance through the flow distribution device 600. The number, size, shape and pattern across the electrodes 602, 604 and intermediate layer 606 of the holes 611 may be varied. Substance flow to and from the flow distribution device 600 are represented respectively by arrows 612, 614.

[0098] FIGs. 7A-7B show a flow distribution device 700 having a single electrode 702 for tilt control. The flow distribution device 700 may be formed of any of the materials stated above for the intermediate layer 507 of FIG. 5. The flow distribution device 700 issupported by a support pin 704 and is tilted by adjusting a voltage applied to the flow distribution device via the electrode 702. The flow distribution device 700 may be tilted about X and / or Y axes, which are shown in FIG. 7B. As an example, the support pin 704 may be grounded and / or be at a reference potential, thereby setting a bottom surface of the flow distribution device at the ground and / or reference potential. The flow distribution device 700 may be tilted about pitch and / or yaw axes of the flow distribution device 700, as represented by arrows 710. The electrode 702 functions as an action arm to adjust pitch and yaw of the flow distribution device 700. Although one electrode is shown disposed on a top surface of the flow distribution device 700, more than one electrode may be disposed on the top surface. For example, one electrode may be used to adjust pitch and another electrode may be used to adjust yaw. As an example, the amount of tilt may be 1 °-3° about the pitch and / or yaw axes. The electrode 702 may be shaped and / or sized differently than shown. The electrode 702 may have a shielded RF filter connector 712.

[0099] Each substrate thickness profile has a radial component along with non-radial components that can be referred to collectively as residual components but be further classified in azimuthal components. In varying pitch / yaw of a flow distribution device, scenarios in which different showerhead angles per station (other than 0 degrees pitch and yaw) are able to be implemented to optimize process conditions. This may be implemented for increased throughput.

[0100] FIGs. 8A-8B show another flow distribution device 800 having electrodes 802, 804 for size variation and another electrode 806 for tilt control. The flow distribution device 800 is supported by a support pin 807. The electrodes 802, 804 are disposed on top and bottom surfaces of an intermediate layer 808, which may be configured similarly as the intermediary layer 507 and 606 of FIGs. 5-6. The intermediate layer 808 may be formed of any of the materials stated above for the intermediate layer 507 of FIG. 5. The flow distribution device 800 may be tilted about pitch and / or yaw axes of the flow distribution device 800, as represented by arrows 810. The flow distribution device 700 may be tilted about X and / or Y axes, which are shown in FIG. 8B. As an example, the amount of tilt may be 1 °-3° about the pitch and / or yaw axes. A different DC voltage may be applied to the electrode 806 than applied across the electrodes 802, 804. The electrode 806 may be shaped and / or sized differently than shown. The electrode 806 may have a shielded RF filter connector 812.

[0101] FIG. 9 shows another flow distribution device 900 including electrodes 902, 904 for size variation and multiple different outer layers 906, 908 for tilt control. An intermediary layer 910 may be disposed between the layers 906, 908. The flow distribution device is supported by a support pin 912. The layers 906, 908, 910 may be formed of any of the materials stated above for the intermediate layer 507 of FIG. 5. The material makeup of the layer 906 may be different than the material makeup of the layer 908 such that when voltage is applied across layers 906, 908, 910, layers 906 and 908 change in size differently causing the flow distribution device 900 to tilt. The layers 906, 908 may have different expansion coefficients. The flow distribution device 900 may be tilted about pitch and / or yaw axes of the flow distribution device 900, as represented by arrows 920. As an example, the amount of tilt may be 1 °-3° about the pitch and / or yaw axes.

[0102] FIG. 10 shows another flow distribution device 1000 including electrodes 1002, 1004 for size variation and two different intermediary layers 1006, 1008 for tilt control. The flow distribution device 1000 is supported by a support pin 1010. The layers 1006, 1008 may be formed of any of the materials stated above for the intermediate layer 507 of FIG. 5. The material makeup of the layers 1006, 1008 may be different such that when voltage is applied across layers 1006, 1008 they change in size differently causing the flow distribution device 1000 to tilt. The layers 1006, 1008 may have different expansion coefficients. The flow distribution device 1000 may be tilted about pitch and / or yaw axes of the flow distribution device 1000, as represented by arrows 1020. As an example, the amount of tilt may be 1 °-3° about the pitch and / or yaw axes.

[0103] FIG. 11 shows a solid flow distribution device 1100 that changes in size radially based on voltage applied. For example, the higher the voltage applied the larger is the flow distribution device 1100. The flow distribution device 1100 may also increase in thickness with increased voltage. The flow distribution device 1100 is shown in two states a low or zero voltage state 1100A and a higher voltage state 1100B.

[0104] FIG. 12 shows a flow distribution device 1200 with holes 1202 and changing in size between a first low or zero voltage state 1200A and a higher voltage state 1200B. As the size of the flow distribution device increases in size, the size (or inner diameter) of the holes 1202 decreases, which reduces flow.

[0105] FIG. 13 shows an implementation including multiple independently controlled first and second flow distribution devices 1300 and 1302, which may be implementedas part of a flow distribution assembly. The first flow distribution device 1300 is disposed in a central opening 1304 of the second flow distribution device 1302. The flow distribution devices 1300, 1302 include respective sets of holes 1306, 1308. In an embodiment, the flow distribution devices 1300, 1302 are circular shaped and concentric. A circular gap G may exist between the flow distribution devices 1300, 1302. Although two flow distribution devices are shown, any number of flow distribution devices may be included, which may be concentric. The flow distribution devices 1300, 1302 may collectively replace any of the individual flow distribution devices of FIGs. 1 -3 and may be adjusted in size and / or tilt using any of the techniques disclosed herein. The flow distribution devices 1300, 1302 may each be formed of the above-stated materials stated for the intermediate layer 507 of FIG. 5. In an embodiment, the flow distribution devices 1300, 1302 are formed of the same material. In another embodiment, the flow distribution devices are formed of different materials. The voltages applied to the flow distribution devices may be the same or different.

[0106] In the example shown, the flow distribution device 1300 is shown in two states a low or zero voltage state 1300A and a higher voltage state 1300B. The flow distribution device 1302 is shown in a single (or same) voltage state. The flow through the center is different than flow radially outward of the center. Flow through the center is adjusted using the flow distribution device 1300, whereas the flow radially outward of the center is adjusted using the flow distribution device 1302.

[0107] In an embodiment, the flow distribution device 1300 shares a same center axis as the flow distribution device 1302 and is radially inward and at a same vertical level as the flow distribution device 1302. In another embodiment, the flow distribution device 1300 shares a same center axis as the flow distribution device 1302 but is at a different vertical level than the flow distribution device 1302.

[0108] FIG. 14 shows a cupped flow distribution device 1400 that includes an annularshaped base 1402 and a cupped (or conically-shaped) center portion 1404. The flow distribution device is shown in two states, a low or zero voltage state 1400A and a higher voltage state 1400B. The flow distribution device 1400 may replace any of the flow distribution devices of FIGs. 1 -3. The flow distribution device 1400 may also include one or more layers and have one or more electrodes similar to any of the flow distribution devices of FIGs. 4-10. The flow distribution device 1400 of FIG. 14 may also include any number, size and / or pattern of holes. The flow distribution device is cuppedto improve deposition uniformity across a substrate. The shape of the flow distribution device may provide improved uniformity in substance flow pressures across the substrate for improved deposition uniformity.

[0109] FIG. 15 shows a thickness profile diagram 1500 of thicknesses of a deposited film layer of a substrate. Multiple different regions 1502, 1504, 1506, 1508, 1510, 1512, 1514 are shown, each of which having respective associated film layer thicknesses. The thicknesses of each region increase from region 1502 to region 1514.

[0110] FIG. 16 shows an average radial thickness plot 1600 illustrating average radial thicknesses of the film layer associated with the diagram of FIG. 15. Multiple annularshaped regions 1601 , 1602, 1604, 1606, 1608, 1610, 1612 are shown with increasing average thicknesses from region 1601 to region 1612.

[0111] FIG. 17 shows a residual thickness plot 1700 illustrating thicknesses associated with differences between the plots of FIGs. 15 and 16 for the film layer. Regions 1701 , 1702, 1704, 1706, 1708, 1710, 1712, 1714 are shown having respective residual thicknesses, which increase from region 1701 to region 1714.

[0112] FIG. 18 shows another residual thickness plot 1800 for another film layer deposited on a substrate. This is a residual non-radial variance example. The thickness values of the residual thickness plot 1800 is a sum of the dipole and quadrupole plots 1900, 2000 of FIGs. 19 and 20. The residual thickness plot 1800 includes different regions 1801 -1813 having different thicknesses and increasing from region 1801 to region 1813.

[0113] FIG. 19 shows the dipole plot 1900 illustrating thicknesses of the film layer associated with when a flow distribution device is tilted about a pitch axis 1902. Regions 1910-1922 are shown increasing in thickness from region 1910 to region 1922. FIG. 20 shows a quadrupole plot 2000 illustrating thicknesses of a film layer of a substrate when a flow distribution device is tiled about pitch and yaw axes 1902, 2002. The quadrupole plot 2000 includes regions 2010-2020 increasing in thickness from region 2010 to region 2020.

[0114] The dipole imbalance of less thickness on the top left and more thickness on the bottom right can be adjusted and accounted for by tilting, for example, a flow distribution device (or baffle plate). A series of adjustments (in increments of depositioncycles / iterations / loops) may be implemented. More complicated asymmetries within the substrate thickness profile may also be achieved.

[0115] The following methods may be implemented to match substance flow rates of multiple stations of a multi-station tool, such as a QSM. Flow is monitored such that nonuniformity of flow among the showerheads of the processing stations is detected.

[0116] FIG. 21 shows a health monitoring, troubleshooting and maintenance method, which may be implemented by one of the system controllers disclosed herein. This includes monitoring any of the flow distribution devices disclosed herein and determining state of health of parts of the corresponding substrate processing system. The health may refer to the remaining life of a part, whether a part has degraded to a level that the part should be replaced, whether maintenance should be performed on a part. Maintenance may include cleaning or other maintenance operation. The following operations are described for a module and / or tool having multiple processing stations with respective showerheads and flow distribution devices. The following operations may be iteratively performed.

[0117] At 2100, the system controller detects voltages at one or more flow distribution devices of each process station via one or more A / D sampling circuits and / or other sensing circuits. Voltages produced due to mechanical force applied by substances (e.g., gases) on the one or more flow distribution devices are indicative of flow rates through the one or more flow distribution devices.

[0118] At 2102, the system controller determines local substance flow rates at each processing station based on the detected voltages. The voltages may be mapped to flow rates based on stored calibration data. This may be done using a lookup table relating the voltages to flow rates, or using one or more equations having one or more set calibrated values for the flow distribution devices monitored.

[0119] At 2104, the system controller determines amounts of change in the voltages and / or flow rates at each of the processing stations since a last detection cycle and / or iteration of this method. Detection of change in flow is able to be determined based on the detected voltages and changes in the detected voltages.

[0120] At 2106, the system controller compares the changes in voltages and / or flow rates of the processing stations to determine differences in flow rates through theshowerheads in the processing stations. Station-to-station comparisons may be performed and evaluated.

[0121] At 2108, the system controller may estimate thicknesses of film layers deposited on substrates in the processing stations based on the flow rates and determine differences between the thicknesses from station-to-station.

[0122] At 2110, the system controller determines whether the differences in the voltages, flow rates and / or the thicknesses are within acceptable variation ranges. As an example, the system controller may determine whether the difference between the changes in voltages is outside a differential voltage tolerance range (e.g., each of the changes in voltages is within ±0.1 -5% of the highest one of the changes in voltages being compared). As an example, when a flow rate in one showerhead is more than 5% different than a flow rate in another showerhead, for the same operation performed, then the difference may be deemed unacceptable. As an another example, the system controller may determine whether the difference in thicknesses are within a tolerance thickness range (e.g., an average of thicknesses of each film layer being compared is within ±0.1 -5% of the highest average thickness of the film layers being compared). If the differences are acceptable, operation 2112 may be performed. If one or more of the differences is unacceptable, operation 2114 may be performed.

[0123] At 2112, the system controller permits continued processing if further processing is called for as shown, otherwise the system controller may end processing.

[0124] At 2114, the system controller may prevent continued processing, report the unacceptable variation detected, and / or perform a troubleshooting procedure. The system controller may indicate that one or more system components should be replaced and / or maintenance should be performed on one or more system parts based on the one or more detected unacceptable variations and / or results of the troubleshooting procedure.

[0125] At 2116, the system controller may determine whether troubleshooting, maintenance, and / or part replacement is completed. If yes and if further processing should be performed, operation 2100 may be performed.

[0126] FIG. 22 shows a flow distribution control method. The following operations are described for a module and / or tool having multiple processing stations with respectiveshowerheads and flow distribution devices. The following operations may be iteratively performed and be implemented by any of the system controllers disclosed herein.

[0127] At 2200, the system controller i) refrains from applying voltages to one or more flow distribution devices in one or more processing stations, and / or ii) applies voltages at one or more flow distribution devices in one or more of the processing stations to adjust local flow distribution at the one or more flow distribution devices.

[0128] At 2202, the system controller detects voltages at one or more flow distribution devices of each process station via one or more A / D sampling circuits and / or other sensing circuits.

[0129] At 2204, the system controller determines local substance flow rates at each processing station based on the detected voltages. The voltages may be mapped to flow rates based on stored calibration data. This may be done using a lookup table relating the voltages to flow rates, or using one or more equations having one or more set calibrated values for the flow distribution devices monitored.

[0130] At 2206, the system controller determines amounts of change in the voltages and / or flow rates at each of the processing stations since a last detection cycle and / or iteration of this method.

[0131] At 2208, the system controller compares the changes in voltages and / or flow rates of the processing stations to determine differences in flow rates through the showerheads in the processing stations.

[0132] At 2210, the system controller may estimate thicknesses of film layers deposited on substrates in the processing stations based on the flow rates and determine differences between the thicknesses from station to station. Film thickness profiles across the substrates may be estimated to determine if the thickness profiles satisfy target thickness profiles.

[0133] At 2212, the system controller determines whether the differences in the voltages, flow rates, and / or thicknesses are within acceptable variation ranges. As an example, the system controller may determine whether the difference between the changes in voltages is outside a differential voltage tolerance range (e.g., each of the changes in voltages is within ±0.1 -5% of the highest one of the changes in voltages being compared). As an example, when a flow rate in one showerhead is more than 5% different than a flow rate in another showerhead, for the same operation performed,then the difference may be deemed unacceptable. As an another example, the system controller may determine whether the difference in thicknesses are within a tolerance thickness range (e.g., an average of thicknesses of each film layer being compared is within ±0.1 -5% of the highest average thickness of the film layers being compared). If the differences are acceptable, operation 2214 may be performed. If one or more of the differences is unacceptable, operation 2218 may be performed.

[0134] At 2214, the system controller permits continued processing if further processing is called for as shown, otherwise the system controller may end processing.

[0135] At 2216, the system controller determines whether flow rates of the processing stations satisfy target flow rates of a recipe being implemented. If yes and if further processing should be performed, operation 2200 may be performed, or operation 2202 if states of the flow distribution devices are to not be further adjusted. Otherwise, operation 2218 may be performed.

[0136] At 2218, the system controller varies positions of one or more throttle valves (e.g., one or more of the throttle valves 212 of FIG. 2) and / or adjusts voltages to one or more of the flow distribution devices. This adjustment may be performed to adjust flow rates in one or more showerheads to provide more uniform flow in the showerheads such that the flow through the showerheads more closely matches each other. The adjustment(s) may be made such that the flow through each showerhead is within a rate tolerance range (e.g., ±0.1 -5% different than the flow through the showerhead experiencing the highest flow rate of the showerheads) of each other one of the showerheads. The adjustments made during this operation may be implemented to minimize the differences determined during operation 2208 and / or 2210. In an embodiment, throttle valve timing is also or alternatively adjusted including adjusting amount of time each throttle valve is at a certain position. The adjustments may be performed to satisfy the target flow rates called for in the recipe. This may include adjusting flow rates in one or more of the processing stations and as many as all of the processing stations. The flow rates may be adjusted to provide target film thickness profiles.

[0137] The above-described examples provide a universal showerhead design that minimizes design time for new processes and corresponding research and development time. The examples provide “control knobs” (or parameters) that can act as both recipe setpoints and be used for real time control. This aids in providinguniformity of deposition despite suboptimal hardware and / or process conditions. The examples enable chamber-to-chamber and station-to-station matching of flow rates and flow distribution and allow for lights out fab operation. Recipe states may be changed based on sensor (or flow distribution device) feedback. This may be accomplished using machine learning. This improves yield while increasing throughput. The examples provide: potentially reduced fluid costs due to a more optimized film growth rate; enhanced machine availability for different process chemistries; improved cleans by directing flow at different regions of interest at different times of clean block; sensitive detection of flow per station; control of plasma anomalies such as hollow cathode discharge (HCDS) by changing flow distribution and therefore local fields.

[0138] The above-described examples allow for improved cleaning of processing chamber components, such as showerheads, substrate supports, edge rings, etc. The top sides and outer radial surfaces of the showerheads and the bottom sides and outer radial surfaces of the substrate supports are able to be better cleaned due to improved flow pressures at radially outer portions of face plates of the showerheads. Substance flow is able to be directed radially outward. This cleaning can decrease clean time and increase lifetime of the components. This also prevents over cleaning (or etching) of non-radially outward surfaces as can occur in a traditional system.

[0139] The foregoing description is merely illustrative in nature and is in no way intended to limit the disclosure, its application, or uses. The broad teachings of the disclosure can be implemented in a variety of forms. Therefore, while this disclosure includes particular examples, the true scope of the disclosure should not be so limited since other modifications will become apparent upon a study of the drawings, the specification, and the following claims. It should be understood that one or more steps within a method may be executed in different order (or concurrently) without altering the principles of the present disclosure. Further, although each of the embodiments is described above as having certain features, any one or more of those features described with respect to any embodiment of the disclosure can be implemented in and / or combined with features of any of the other embodiments, even if that combination is not explicitly described. In other words, the described embodiments are not mutually exclusive, and permutations of one or more embodiments with one another remain within the scope of this disclosure.

[0140] Spatial and functional relationships between elements (for example, between modules, circuit elements, semiconductor layers, etc.) are described using various terms, including “connected,” “engaged,” “coupled,” “adjacent,” “next to,” “on top of,” “above,” “below,” and “disposed.” Unless explicitly described as being “direct,” when a relationship between first and second elements is described in the above disclosure, that relationship can be a direct relationship where no other intervening elements are present between the first and second elements, but can also be an indirect relationship where one or more intervening elements are present (either spatially or functionally) between the first and second elements. As used herein, the phrase at least one of A, B, and C should be construed to mean a logical (A OR B OR C), using a non-exclusive logical OR, and should not be construed to mean “at least one of A, at least one of B, and at least one of C.”

[0141] In some implementations, a controller is part of a system, which may be part of the above-described examples. Such systems can comprise semiconductor processing equipment, including a processing tool or tools, chamber or chambers, a platform or platforms for processing, and / or specific processing components (a wafer pedestal, a gas flow system, etc.). These systems may be integrated with electronics for controlling their operation before, during, and after processing of a semiconductor wafer or substrate. The electronics may be referred to as the “controller,” which may control various components or subparts of the system or systems. The controller, depending on the processing requirements and / or the type of system, may be programmed to control any of the processes disclosed herein, including the delivery of processing gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, positional and operation settings, wafer transfers into and out of a tool and other transfer tools and / or load locks connected to or interfaced with a specific system.

[0142] Broadly speaking, the controller may be defined as electronics having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operation, enable cleaning operations, enable endpoint measurements, and the like. The integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software). Programinstructions may be instructions communicated to the controller in the form of various individual settings (or program files), defining operational parameters for carrying out a particular process on or for a semiconductor wafer or to a system. The operational parameters may, in some embodiments, be part of a recipe defined by process engineers to accomplish one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0143] The controller, in some implementations, may be a part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller may be in the “cloud” or all or a part of a fab host computer system, which can allow for remote access of the wafer processing. The computer may enable remote access to the system to monitor current progress of fabrication operations, examine a history of past fabrication operations, examine trends or performance metrics from a plurality of fabrication operations, to change parameters of current processing, to set processing steps to follow a current processing, or to start a new process. In some examples, a remote computer (e.g., a server) can provide process recipes to a system over a network, which may include a local network or the Internet. The remote computer may include a user interface that enables entry or programming of parameters and / or settings, which are then communicated to the system from the remote computer. In some examples, the controller receives instructions in the form of data, which specify parameters for each of the processing steps to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be performed and the type of tool that the controller is configured to interface with or control. Thus, as described above, the controller may be distributed, such as by comprising one or more discrete controllers that are networked together and working towards a common purpose, such as the processes and controls described herein. An example of a distributed controller for such purposes would be one or more integrated circuits on a chamber in communication with one or more integrated circuits located remotely (such as at the platform level or as part of a remote computer) that combine to control a process on the chamber.

[0144] Without limitation, example systems may include a plasma etch chamber or module, a deposition chamber or module, a spin-rinse chamber or module, a metal plating chamber or module, a clean chamber or module, a bevel edge etch chamber ormodule, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing systems that may be associated or used in the fabrication and / or manufacturing of semiconductor wafers.

[0145] As noted above, depending on the process step or steps to be performed by the tool, the controller might communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout a factory, a main computer, another controller, or tools used in material transport that bring containers of wafers to and from tool locations and / or load ports in a semiconductor manufacturing factory.

Claims

CLAIMSWhat is claimed is:

1. A first flow distribution device to be disposed in a body or a stem of a showerhead of a substrate processing system, the first flow distribution device comprising: a pair of electrodes; and an intermediate layer disposed between the pair of electrodes and comprising an electroactive polymer that changes state based on a voltage applied to the pair of electrodes.

2. The first flow distribution device of claim 1 , wherein the pair of electrodes and the intermediate layer are collectively implemented as a baffle plate affecting flow of a substance through the showerhead.

3. The first flow distribution device of claim 2, wherein the baffle plate comprises a plurality of holes through which the substance flows.

4. The first flow distribution device of claim 2, wherein the baffle plate comprises only a single layer formed of an electroactive polymer.

5. The first flow distribution device of claim 2, wherein the baffle plate is circular shaped.

6. The first flow distribution device of claim 1 , wherein the baffle plate comprises a plurality of different layers each of which is formed of an electroactive polymer.

7. The first flow distribution device of claim 1 , wherein the intermediate layer changes in at least one of shape, size, and tilt angle based on the voltage applied to the pair of electrodes.

8. The first flow distribution device of claim 1 , wherein the intermediate layer comprises at least one of ethylene chlorotrifluoroethylene, ethylene tetrafluoroethylene, polyvinylidene fluoride, fluorinated ethylene propylene, poly-fluoroalkyl, and polytetrafluoroethylene.

9. The first flow distribution device of claim 1 , wherein the intermediate layer comprises a fluorinated material.

10. The first flow distribution device of claim 1 , wherein the intermediate layer comprises a non-polyfluoroalkyl substance.1 1 . The first flow distribution device of claim 1 , wherein the intermediate layer comprises a material that is non-reactive to a fluorine species while also being a non- polyfluoroalkyl substance.

12. The first flow distribution device of claim 1 , wherein the intermediate layer comprises at least one of i) a fluoropolymer, ii) a non-polyfluoroalkyl substance fluoropolymer, and iii) a silicon-based polymer.

13. A flow distribution assembly comprising: the first flow distribution device of claim 1 ; and a second flow distribution device.

14. The flow distribution assembly of claim 13, wherein the second flow distribution device is disposed radially outward of the first flow distribution device.

15. The flow distribution assembly of claim 13, wherein the second flow distribution device is disposed radially inward of the first flow distribution device.

16. The flow distribution assembly of claim 13, wherein the second flow distribution device is disposed radially upstream from the first flow distribution device.

17. The flow distribution assembly of claim 13, wherein the second flow distribution device is disposed radially downstream from the first flow distribution device.

18. The flow distribution assembly of claim 13, wherein: the first flow distribution device comprises a first plurality of holes; and the second flow distribution device comprises a second plurality of holes.

19. The flow distribution assembly of claim 13, wherein the second flow distribution device comprises: a second pair of electrodes; and a second intermediate layer disposed between the second pair of electrodes and changing state based on a voltage applied to the second pair of electrodes.

20. The flow distribution assembly of claim 13, wherein a gap exists between the first flow distribution device and the second flow distribution device.21 . The flow distribution assembly of claim 20, wherein the gap is circular shaped.

22. A flow distribution control system comprising: a first showerhead having a stem that receives a processing substance; a first flow distribution device disposed in the first showerhead or the stem; and a controller to cause detection of a first voltage across the first flow distribution device, and based on the first voltage, cause determining of a flow rate of the processing substance through the first showerhead.

23. The flow distribution control system of claim 22 wherein the first flow distribution device adjusts flow distribution of the processing substance through the first showerhead.

24. The flow distribution control system of claim 22, wherein the controller applies a second voltage to the first flow distribution device to adjust the flow distribution of the processing substance through the first showerhead.

25. The flow distribution control system of claim 24, wherein the first voltage is a same voltage as the second voltage.

26. The flow distribution control system of claim 24, wherein the first voltage is different than the second voltage.

27. The flow distribution control system of claim 22, wherein the first flow distribution device comprises a plurality of electrodes to apply a second voltage to the first flow distribution device to change a size of the first flow distribution device.

28. The flow distribution control system of claim 22, wherein the first flow distribution device comprises an electrode to apply a voltage to the first flow distribution device to adjust tilt of the first flow distribution device.

29. The flow distribution control system of claim 22, wherein the first flow distribution device is formed of an electroactive polymer.

30. The flow distribution control system of claim 22, wherein the first flow distribution device is formed of at least one of ethylene chlorotrifluoroethylene, ethylene tetrafluoroethylene, polyvinylidene fluoride, fluorinated ethylene propylene, polyfluoroalkyl, and polytetrafluoroethylene.31 . The flow distribution control system of claim 22, wherein the first flow distribution device is formed of a fluorinated material.

32. The flow distribution control system of claim 22, wherein the first flow distribution device is formed of a non-polyfluoroalky! substance.

33. The flow distribution control system of claim 22, wherein the first flow distribution device is formed of a material that is non-reactive to a fluorine species while also being a non-polyfluoroalkyl substance.

34. The flow distribution control system of claim 22, wherein the first flow distribution device is formed of at least one of i) a fluoropolymer, ii) a non-polyfluoroalkyl substance fluoropolymer, and iii) a silicon-based polymer.

35. The flow distribution control system of claim 22, wherein the first flow distribution device comprises only a single layer formed of an electroactive polymer.

36. The flow distribution control system of claim 22, wherein the first flow distribution device comprises a plurality of different layers each of which is formed of an electroactive polymer.

37. The flow distribution control system of claim 22, further comprising an analog-to- digital circuit configured to detect a second voltage across the first flow distribution device, wherein the controller comprises instructions for causing a state of a valve to be controlled based on the second voltage.

38. The flow distribution control system of claim 22, further comprising an analog-to- digital circuit configured to detect a second voltage across the first flow distribution device, wherein the controller comprises instructions for causing the first voltage to be adjusted based on the second voltage.

39. The flow distribution control system of claim 22, wherein the first flow distribution device comprises a plurality of holes that change in size based on change in the first voltage.

40. The flow distribution control system of claim 22, further comprising a second flow distribution device disposed in the first showerhead or the stem, wherein: the controller causes a second voltage to be applied to the second flow distribution device to adjust the flow distribution of the processing substance through the first showerhead, and the second voltage is generated independent of the first voltage.

41. The flow distribution control system of claim 40, wherein the second flow distribution device is upstream from the first flow distribution device.

42. The flow distribution control system of claim 40, wherein the second flow distribution device is disposed radially inward of the first flow distribution device.

43. The flow distribution control system of claim 22, further comprising a plurality of processing stations comprising respectively a plurality of showerheads, wherein: the plurality of showerheads comprise the first showerhead; the plurality of showerheads include respectively a plurality of flow distribution devices; and the plurality of flow distribution devices comprise the first flow distribution device.

44. The flow distribution control system of claim 43, wherein the controller causes the first voltage applied to the first flow distribution device to be adjusted to match flow through the first showerhead to flow through one or more of other showerheads of the plurality of showerheads.

45. A method comprising: measuring substance flow rates at a plurality of flow distribution devices disposed in a plurality of showerheads respectively in a plurality of substrate processing stations; determining whether a difference between the substance flow rates is within a rate tolerance range of each other; and in response to a difference between the substance flow rates being outside the rate tolerance range, at least one of i) preventing continued substrate processing, ii) reporting the difference between the substance flow rates is outside the rate tolerance range, and iii) performing a troubleshooting procedure.

46. The method of claim 45, wherein the plurality of flow distribution devices affect substance flow through respectively the plurality of showerheads.

47. The method of claim 45, further comprising detecting voltages at the plurality of flow distribution devices, wherein the substance flow rates through the plurality of showerheads are measured based on the voltages.

48. The method of claim 47, further comprising: determining amounts of change in the voltages; determining a difference between the changes in voltages; determining whether the difference between the changes in voltages is outside a differential voltage tolerance range; and in response to the difference between the changes in voltages not being in the differential voltage tolerance range, at least one of i) preventing continued substrate processing, ii) reporting the difference between the changes in voltages, and iii) performing a troubleshooting procedure.

49. The method of claim 45, further comprising: estimating or measuring thicknesses of film layers deposited on substrates in the plurality of substrate processing stations; determining differences between first thicknesses of a first film layer of a first one of the substrates and second thicknesses of a second film layer of a second one of the substrates; determining whether one or more of the differences between the first thicknesses and the second thicknesses is within a tolerance thickness range; and in response to the one or more of the differences not being in the tolerance thickness range, at least one of i) preventing continued substrate processing, ii) reporting the one or more differences, and iii) performing a troubleshooting procedure.

50. A flow distribution method comprising: detecting voltages at a plurality of flow distribution devices and for a plurality of showerheads respectively in a plurality of substrate processing stations; determining substance flow rates through the plurality of showerheads based on the voltages; determining whether a difference between the substance flow rates is within a rate tolerance range of each other; and in response to a difference between the substance flow rates not being in the rate tolerance range of each other, adjusting substance flow through at least one of the plurality of showerheads.51 . The flow distribution method of claim 50, wherein the plurality of flow distribution devices adjust substance flow through the plurality of showerheads respectively in the plurality of substrate processing stations.

52. The flow distribution method of claim 50, further comprising adjusting substance flow through one or more valves to adjust the substance flow through the at least one of the plurality of showerheads.

53. The method of claim 52, further comprising, in response to a difference between the substance flow rates not being within the rate tolerance range of each other, adjusting positions of one or more throttle plates of the one or more valves to adjust substance flow through the one or more valves.

54. The method of claim 52, further comprising: determining amounts of change in the voltages; determining a difference between the changes in voltages; determining whether the difference between the changes in voltages is within a differential voltage tolerance range; and in response to a difference between the substance flow rates not being within the differential voltage tolerance range, at least one of i) adjusting the substance flow through the one or more valves, and ii) adjusting the voltages applied to the one or more of the flow distribution devices.

55. The flow distribution method of claim 50, further comprising adjusting voltages applied to one or more of the flow distribution devices to adjust the substance flow through the at least one of the plurality of showerheads.

56. The method of claim 55, further comprising, in response to a difference between the substance flow rates not being in the rate tolerance range, adjusting the voltages applied to the one or more of the flow distribution devices.

57. The method of claim 50, further comprising: estimating or measuring thicknesses of film layers deposited on substrates in the plurality of substrate processing stations; determining differences between first thicknesses of a first film layer of a first one of the substrates and second thicknesses of a second film layer of a second one of the substrates; determining whether one or more of the differences between the first thicknesses and the second thicknesses is within a thickness tolerance range; and in response to a difference between the substance flow rates not being within the thickness tolerance range, at least one of i) adjusting the substance flow through one or more valves, and ii) adjusting the voltages applied to one or more of the flow distribution devices.

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