Perovskite battery and preparation method therefor, photovoltaic module, photovoltaic system, electric device, and power generating device

Abstract

The present application relates to a perovskite battery and a preparation method therefor, a photovoltaic module, a photovoltaic system, an electric device, and a power generating device. The perovskite battery comprises a first electrode layer, a hole transport layer, a perovskite layer and a second electrode layer; the hole transport layer is arranged on one side of the first electrode layer, and the hole transport layer comprises nickel oxide and reducing cations; the perovskite layer is arranged on the side of the hole transport layer away from the first electrode layer; the second electrode layer is arranged on the side of the perovskite layer away from the hole transport layer. The perovskite layer in the perovskite battery of the present application has good long-term stability, and the perovskite battery has a long service life.

Description

Perovskite cell and preparation method thereof, photovoltaic module, photovoltaic system, power consumption device and power generation device

[0001] Cross-references

[0002] This application claims priority from Chinese Patent Application No. 2024102640913, filed on March 7, 2024, entitled “Perovskite Cell and Preparation Method thereof, Photovoltaic Module, Photovoltaic System, Electricity-consuming Device and Power-generating Device,” which is incorporated herein by reference in its entirety. Technical Field

[0003] The present application relates to the field of solar cells, and specifically to a perovskite cell and a preparation method thereof, a photovoltaic module, a photovoltaic system, an electrical device, and a power generation device. Background Art

[0004] With the rapid development of new energy, solar cells have been widely used in aerospace, industry, commerce, agriculture, and communications. Perovskite solar cells, currently the third generation of solar cells, utilize the photoelectric conversion mechanism of perovskite crystal materials to convert solar energy into electrical energy. They offer numerous advantages, including high photoelectric conversion efficiency, simple manufacturing processes, and low production costs, and have been the subject of extensive research in recent years.

[0005] However, existing perovskite batteries often suffer from poor long-term stability of the perovskite layer, resulting in a short lifespan, which seriously restricts the industrial application of perovskite batteries. Therefore, how to improve the long-term stability of the perovskite layer and extend the battery life has become one of the important research directions in this field. Summary of the Invention

[0006] The present application is made in view of the above-mentioned problems, and one of its purposes is to provide a perovskite battery in which the perovskite layer has good long-term stability and the perovskite battery has a longer life.

[0007] In order to achieve the above objectives, the first aspect of the present application provides a perovskite battery, comprising:

[0008] a first electrode layer;

[0009] a hole transport layer, disposed on one side of the first electrode layer, the hole transport layer comprising nickel oxide and reducing cations;

[0010] a perovskite layer, disposed on a side of the hole transport layer facing away from the first electrode layer; and

[0011] The second electrode layer is disposed on a side of the perovskite layer away from the hole transport layer.

[0012] In the perovskite battery mentioned above in the present application, the reducing cation refers to a cation that has the ability to lose electrons in a chemical reaction. The reducing cation described in the present invention can be selected as a reducing cation that can reduce high-valent nickel ions, wherein the valence of the high-valent nickel ions is greater than or equal to +3. The present application adds a reducing cation that can reduce high-valent nickel ions to the hole transport layer. The reducing cation can undergo an oxidation-reduction reaction with the high-valent nickel ions in the hole transport layer, converting the high-valent nickel ions into low-valent nickel ions, thereby alleviating the degradation problem of perovskite caused by contact between the high-valent nickel ions and the perovskite light-absorbing layer, improving the long-term stability of the perovskite layer, and thereby improving the life of the perovskite battery.

[0013] In any embodiment, the reducing cation comprises a lanthanide metal ion.

[0014] In any embodiment, the lanthanide metal ion comprises Eu 2+ 、Yb 2+ 、Sm 2+ 、Ce 3+ 、Tb 3+ or Pr 3+ The lanthanide metal ions can effectively reduce the high-valent nickel ions in the hole transport layer to low-valent nickel ions, thereby effectively alleviating the degradation of perovskite.

[0015] In any embodiment, the concentration of reducing cations on the side of the hole transport layer facing away from the first electrode layer is greater than the concentration of reducing cations on the side of the hole transport layer facing the first electrode layer. In this way, the reducing cations are primarily located on the side of the hole transport layer facing the perovskite layer, which can better mitigate the degradation of the perovskite.

[0016] In any embodiment, the nickel oxide further includes doped cations. Doped cations can distort the nickel oxide lattice and create defects in the nickel oxide crystals, thereby increasing the hole mobility of the hole transport layer and thereby improving the photoelectric conversion efficiency and fill factor of the perovskite cell.

[0017] In any embodiment, the doping cation includes Li + 、Cs + , Rb + 、Ag + Mg 2+ , Ca 2+ 、Zn 2+ 、Sr 2+ 、Ba 2+ 、Fe 2+ 、Fe 3+ 、Co 2+ 、Co3+ 、Cu + 、Eu 3+ 、Yb 3+ 、Sm 2+ 、Ce 4+ 、Tb 4+ 、Pr 4+ 、Cu 2+ or Nd 3+ The above-mentioned doping cations are added to the hole transport layer to effectively improve the hole mobility of the hole transport layer.

[0018] In any embodiment, the hole transport layer includes a direct contact layer facing the perovskite layer and an indirect contact layer away from the perovskite layer, the direct contact layer includes nickel oxide and the reducing cations, and the indirect contact layer includes nickel oxide. In this way, the reducing cations can reduce the high-valent nickel ions on the interface of the hole transport layer close to the perovskite layer without excessively affecting the high-valent nickel ions within the hole transport layer, thereby reducing the problem of perovskite degradation due to deprotonation reaction when the high-valent nickel ions at the interface contact the perovskite layer, while not affecting the promoting effect of the high-valent nickel ions within the hole transport layer on hole transport.

[0019] In any embodiment, at least 60% of the reducing cations are distributed in the direct contact layer. Thus, at least 60% of the reducing cations distributed in the direct contact layer can reduce high-valent nickel ions at the interface of the hole transport layer near the perovskite layer without excessively affecting the high-valent nickel ions within the hole transport layer.

[0020] In any embodiment, the thickness of the direct contact layer is 0.1 nm to 20 nm, optionally 0.1 nm to 10 nm, and further optionally 2 nm to 10 nm. In this way, the reducing cations can reduce the high-valent nickel ions at the interface to reduce their damage to the perovskite layer material, while not significantly affecting the high-valent nickel ions in the hole transport layer that promote hole transport.

[0021] In any embodiment, the molar ratio of the reducing cation to the nickel element in the direct contact layer is in the range of 0.0001 to 0.2:1, and can be optionally in the range of 0.002 to 0.05:1. Thus, controlling the molar ratio of the reducing cation to the nickel element within the above range can effectively mitigate perovskite degradation and improve the life of the perovskite battery.

[0022] In any embodiment, the hole transport layer further includes an indirect contact layer, the indirect contact layer being located between the direct contact layer and the indirect contact layer, the indirect contact layer comprising nickel oxide and the reducing cation, or the indirect contact layer comprising nickel oxide, the reducing cation, and the doped cation. Thus, the reducing cation can reduce the high-valent nickel ions in the nickel oxide. When the indirect contact layer includes the doped cation, the doped cation can distort the nickel oxide lattice and create defects in the nickel oxide crystals, thereby improving the hole mobility of the hole transport layer and, in turn, improving the photoelectric conversion efficiency and fill factor of the perovskite cell.

[0023] In any embodiment, the thickness of the indirect contact layer is 0.1 nm to 20 nm, optionally 0.1 nm to 10 nm, and more optionally 0.1 nm to 5 nm; and / or, in the indirect contact layer, the molar ratio of the reducing cation to the nickel element is in the range of 0.0001 to 0.2:1, optionally 0.002 to 0.05:1; and / or, in the indirect contact layer, when the indirect contact layer includes the dopant cation, the molar ratio of the dopant cation to the nickel element is in the range of 0.0001 to 0.2:1, optionally 0.001 to 0.1:1. In this way, while effectively improving the hole mobility of the hole transport layer and the photoelectric conversion efficiency of the perovskite cell, the indirect contact layer and the non-contact layer can maintain good crystallinity.

[0024] In any embodiment, the density of the direct contact layer, the indirect contact layer, and the indirect contact layer is independently 1% to 100%, and optionally 85% to 100%.

[0025] The second aspect of the present application provides a method for preparing the perovskite battery of the first aspect of the present application, comprising the following steps:

[0026] forming a first electrode layer, a hole transport layer, a perovskite layer, and a second electrode layer stacked in sequence;

[0027] Wherein, the hole transport layer includes nickel oxide and reducing cations.

[0028] The above-mentioned preparation method adds reducing cations to the hole transport layer, and the reducing cations can reduce high-valent nickel ions. In this way, the reducing cations can react with the high-valent nickel ions in the hole transport layer to convert the high-valent nickel ions into low-valent nickel ions, which can alleviate the degradation of perovskite caused by the reaction of high-valent nickel ions with the perovskite layer material, thereby improving the long-term stability of the perovskite layer and the life of the perovskite battery.

[0029] In any embodiment, the preparation of the hole transport layer comprises the following steps:

[0030] Multiple hole transport monolayers are sequentially prepared on the first electrode layer, and the multiple hole transport monolayers are stacked on the first electrode layer, and at least the hole transport monolayer in direct contact with the perovskite layer includes the reducing cation. In this way, different cations can be doped into different hole transport monolayers as needed. Furthermore, the reducing cations can reduce the high-valent nickel ions at the interface of the hole transport layer close to the perovskite layer, reducing the problem of deprotonation reaction of the high-valent nickel ions at the interface when contacting the perovskite layer, thereby improving the long-term stability of the perovskite layer and thereby increasing the life of the perovskite battery.

[0031] In any embodiment, the molar ratio of the reducing cation to the nickel element in the hole transport monolayer adjacent to the perovskite layer is 0.0001 to 0.2:1, and may be 0.002 to 0.05:1. This effectively mitigates perovskite degradation and improves the life of the perovskite battery while maintaining good crystallinity of the hole transport layer.

[0032] In any embodiment, each hole transport monolayer independently contains or does not contain a dopant cation capable of causing lattice distortion in nickel oxide. By doping the hole transport monolayer with a dopant cation capable of causing lattice distortion in nickel oxide, defects can be introduced into the nickel oxide crystals, thereby increasing the hole mobility in the hole transport layer and thereby improving the photoelectric conversion efficiency and fill factor of the perovskite cell.

[0033] In any embodiment, in the hole transport monolayer containing the dopant cation, the molar ratio of the dopant cation to the nickel element is 0.0001 to 0.2:1, and can be optionally 0.001 to 0.1:1. This effectively improves the hole mobility of the hole transport layer and the photoelectric conversion efficiency of the perovskite cell while maintaining good crystallinity of the hole transport layer.

[0034] In any embodiment, the number of the hole transport single layer is 2 to 50 layers, and can be optionally 4 to 20 layers.

[0035] In any embodiment, the thickness of each hole transport single layer is 0.1 nm to 20 nm, and can be optionally 0.5 nm to 10 nm.

[0036] The third aspect of the present application provides a photovoltaic module, comprising the perovskite cell of the first aspect of the present application or the perovskite cell prepared by the preparation method of the second aspect of the present application.

[0037] A fourth aspect of the present application provides a photovoltaic system, comprising the photovoltaic assembly of the third aspect of the present application.

[0038] The fifth aspect of the present application provides an electrical device, including the photovoltaic system of the fourth aspect of the present application.

[0039] A sixth aspect of the present application provides a power generation device, comprising the photovoltaic system of the fourth aspect of the present application.

[0040] The details of one or more embodiments of the present application are set forth in the following drawings and description. Other features, objects, and advantages of the present application will become apparent from the description, drawings, and claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] In order to better describe and illustrate the embodiments or examples of the applications disclosed herein, reference may be made to one or more of the accompanying drawings. The additional details or examples used to describe the accompanying drawings should not be considered to limit the scope of the disclosed applications, the embodiments or examples currently described, and any of the best modes currently understood for these applications. Moreover, the same reference numerals are used throughout the drawings to represent the same components. In the drawings:

[0042] FIG1 is a schematic structural diagram of a perovskite battery according to one embodiment of the present application;

[0043] FIG2 is a schematic structural diagram of an electric device according to an embodiment of the present application.

[0044] Explanation of the accompanying symbols: 10, perovskite cell; 11, first electrode layer; 12, hole transport layer; 13, perovskite layer; 14, second electrode layer; 121, first hole transport monolayer; 122, second hole transport monolayer; 123, third hole transport monolayer. DETAILED DESCRIPTION

[0045] Below, some embodiments of the perovskite cell disclosed in the present application are described in detail, with appropriate reference to the accompanying drawings. However, unnecessary detailed descriptions may be omitted. For example, detailed descriptions of well-known matters and repeated descriptions of substantially identical structures may be omitted. This is to avoid unnecessary length in the following description and to facilitate understanding by those skilled in the art. In addition, the drawings and the following description are provided to enable those skilled in the art to fully understand the present application and are not intended to limit the subject matter described in the claims.

[0046] The "ranges" disclosed herein are defined in terms of lower and upper limits, where a given range is defined by selecting a lower limit and an upper limit, and the selected lower and upper limits define the boundaries of the particular range. Ranges defined in this manner can be inclusive or exclusive of the end values ​​and can be combined arbitrarily, i.e., any lower limit can be combined with any upper limit to form a range. For example, if ranges of 60 to 120 and 80 to 110 are listed for a particular parameter, it is understood that ranges of 60 to 110 and 80 to 120 are also contemplated. Furthermore, if minimum range values ​​of 1 and 2 are listed, and if maximum range values ​​of 3, 4, and 5 are listed, the following ranges are all contemplated: 1 to 3, 1 to 4, 1 to 5, 2 to 3, 2 to 4, and 2 to 5. In this application, unless otherwise indicated, the numerical range "a to b" is a shorthand representation of any combination of real numbers between a and b, where a and b are both real numbers. For example, a numerical range of "0-5" indicates that all real numbers between "0-5" are listed herein, and "0-5" is merely an abbreviation for a combination of these values. Furthermore, stating that a parameter is an integer ≥ 2 is equivalent to disclosing that the parameter is, for example, an integer of 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, and so on. For example, stating that a parameter is an integer selected from "2-10" is equivalent to listing the integers 2, 3, 4, 5, 6, 7, 8, 9, and 10.

[0047] Unless otherwise specified, all embodiments and optional embodiments of the present application can be combined with each other to form a new technical solution.

[0048] Unless otherwise specified, all steps of the present application may be performed sequentially or randomly, preferably sequentially. For example, the method includes steps (a) and (b), indicating that the method may include steps (a) and (b) performed sequentially, or may include steps (b) and (a) performed sequentially. For example, the method may further include step (c), indicating that step (c) may be added to the method in any order, for example, the method may include steps (a), (b) and (c), or may include steps (a), (c) and (b), or may include steps (c), (a) and (b), etc.

[0049] Unless otherwise specified, the terms "include" and "comprising" used in this application may be open-ended or closed-ended. For example, "include" and "comprising" may mean that other components not listed may also be included or that only the listed components are included.

[0050] Unless otherwise specified, the term "or" is inclusive in this application. For example, the phrase "A or B" means "A, B, or both A and B." Furthermore, the condition "A or B" is satisfied by any of the following conditions: A is true (or exists) and B is false (or does not exist); A is false (or does not exist) and B is true (or exists); or both A and B are true (or exist).

[0051] In this application, unless otherwise specified, A (such as B) means that B is a non-limiting example of A, and it can be understood that A is not limited to B.

[0052] In this application, "a plurality of" or "a plurality of" refers to a number greater than or equal to 2 unless otherwise specified. For example, "one or more" means one or more than or equal to two.

[0053] As used herein, "combination thereof", "any combination thereof", "any combination thereof" and the like include all suitable combinations of any two or more of the listed items.

[0054] Herein, the “suitable” mentioned in “suitable combination”, “suitable method”, “any suitable method”, etc. shall be based on the technical solution that can implement the present application.

[0055] Herein, the terms "preferred," "better," "more preferred," and "suitable" are used solely to describe preferred implementations or examples and should not be construed as limiting the scope of protection of this application. If multiple "preferred" terms appear in a technical solution, each "preferred" term is considered independent unless otherwise specified and there are no contradictions or mutual constraints.

[0056] In this application, "further", "further", "particularly" and the like are used for descriptive purposes to indicate differences in content, but should not be understood as limiting the scope of protection of this application.

[0057] In this application, the terms "first," "second," "third," "fourth," etc. in "the first aspect," "the second aspect," "the third aspect," "the fourth aspect," etc. are used for descriptive purposes only and should not be understood as indicating or implying relative importance or quantity, nor should they be understood as implicitly indicating the importance or quantity of the indicated technical features. Furthermore, "first," "second," "third," "fourth," etc. serve only as non-exhaustive enumeration and description, and should be understood not to constitute a closed-ended limitation on quantity.

[0058] In this application, the term "room temperature" generally refers to 4°C to 35°C, and may refer to 20°C ± 5°C. In some embodiments of this application, room temperature refers to 20°C to 30°C.

[0059] In this application, when referring to a data range, if the unit is only after the right endpoint, it means that the units of the left and right endpoints are the same. For example, 3h~5h or 3h~5h both mean that the units of the left endpoint "3" and the right endpoint "5" are both hours.

[0060] The weights of the relevant components mentioned in the examples of this application may not only refer to the content of each component, but also represent the weight ratio between the components. Therefore, as long as the content of the relevant components is proportionally enlarged or reduced according to the examples of this application, it is within the scope disclosed in the examples of this application. Furthermore, the weights mentioned in the examples of this application may be mass units known in the chemical industry, such as μg, mg, g, and kg.

[0061] Existing perovskite solar cells often suffer from poor long-term stability of the perovskite layer, resulting in a short lifespan for the perovskite cell, which severely restricts its industrial application. Therefore, improving the long-term stability of the perovskite layer and thus extending the battery life has become an important research direction in this field. To address this issue, the present application improves the hole transport layer in the perovskite cell, effectively improving the long-term stability of the perovskite layer and thereby extending the lifespan of the perovskite cell.

[0062] Referring to FIG. 1 , the first aspect of the present application provides a perovskite cell 10, comprising a first electrode layer 11, a hole transport layer 12, a perovskite layer 13, and a second electrode layer 14. The hole transport layer 12 is disposed on the first electrode layer 11 and comprises nickel oxide and reducing cations. The reducing cations are capable of reducing high-valent nickel ions, wherein the high-valent nickel ions have a valence greater than or equal to +3. The perovskite layer 13 is disposed on the side of the hole transport layer 12 facing away from the first electrode layer 11. The second electrode layer 14 is disposed on the side of the perovskite layer 13 facing away from the hole transport layer 12.

[0063] During the preparation of the perovskite battery 10, the hole transport layer 12 is a nickel oxide material (NiOx), which contains divalent nickel ions and high-valent nickel ions greater than or equal to +3. These high-valent nickel ions are Brønsted bases. When they come into contact with the perovskite layer 13, they will cause the perovskite material to undergo a deprotonation reaction, causing the perovskite to degrade. This results in poor long-term stability of the perovskite layer 13, thereby affecting the life of the perovskite battery 10. The reaction process of perovskite degradation is schematically shown as follows:

[0064] The perovskite battery 10 of the present application is characterized by adding reducing cations capable of reducing high-valent nickel ions into the hole transport layer 12. The reducing cations can undergo redox reactions with the high-valent nickel ions in the hole transport layer 12, converting the high-valent nickel ions into low-valent nickel ions (such as Ni 2+ ), thereby alleviating the degradation of the perovskite, improving the long-term stability of the perovskite layer 13, and further increasing the life of the perovskite cell 10.

[0065] It should be noted that although reducing cations capable of reducing high-valent nickel ions are added to the hole transport layer 12, the reducing cations react with the high-valent nickel ions and are consumed; however, since perovskites generally contain halide ions (such as iodide ions), the cations in the portion of the hole transport layer 12 that contacts the perovskite layer 13 after reacting with the high-valent nickel ions react with the halide ions in the perovskite and are reduced to reducing cations. In other words, reducing cations can still be detected in the hole transport layer 12 of the perovskite cell 10.

[0066] In some embodiments, the reducing cation comprises a lanthanide metal ion. In some specific examples, the lanthanide metal ion comprises Eu 2+ 、Yb 2+ 、Sm 2+ 、Ce 3+ 、Tb 3+ or Pr 3+ The lanthanide metal ions have a half-filled F orbital outside their nuclei. They have good reducibility and can reduce high-valent nickel ions in the hole transport layer to low-valent nickel ions, thereby effectively alleviating the degradation of perovskite.

[0067] In some embodiments, the reducing cation concentration on the side of the hole transport layer 12 facing the perovskite layer 13 is greater than the reducing cation concentration on the side of the hole transport layer 12 facing the first electrode layer 11. In the perovskite battery 10, since the side of the hole transport layer 12 in contact with the perovskite layer 13 contains high-valent nickel ions, which will come into contact with the perovskite and cause degradation of the perovskite, by making the reducing cation concentration on the side of the hole transport layer 12 in contact with the perovskite layer 13 greater than the reducing cation concentration on the side of the hole transport layer 12 facing the first electrode layer 11, the reducing cations mainly reduce the high-valent nickel ions in the hole transport layer 12 on the side of the hole transport layer 12 in contact with the perovskite layer 13, thereby reducing the content of the high-valent nickel ions and thereby reducing the contact between the high-valent nickel ions and the perovskite material, thereby better alleviating the degradation of the perovskite.

[0068] In some embodiments, the nickel oxide of the hole transport layer 12 also includes doped cations that can cause lattice distortion of the nickel oxide. Since the intrinsic mobility of nickel oxide is low, when it is used as the hole transport layer 12 in the perovskite cell 10, there is a problem of low hole mobility, resulting in poor photoelectric conversion efficiency (photovoltaic conversion efficiency, PCE) and fill factor (Fill factor, FF) of the perovskite cell 10. To this end, the present application adds doped cations that can cause lattice distortion of nickel oxide to the hole transport layer 12. After these doped cations are added to the nickel oxide lattice, the difference in radius between the doped cations and the nickel ion radius will cause the nickel oxide lattice to be distorted, causing defects in the nickel oxide crystals, thereby improving the hole mobility of the hole transport layer 12, and then improving the photoelectric conversion efficiency and fill factor of the perovskite cell 10.

[0069] In some embodiments, the doping cation includes Li + 、Cs + , Rb + 、Ag + Mg 2+ , Ca 2+ 、Zn 2+ 、Sr 2+ 、Ba 2+ 、Fe 2+ 、Fe 3+ 、Co 2+ 、Co 3+ 、Cu + 、Eu 3+ 、Yb 3+ 、Sm 2+ 、Ce 4+ 、Tb 4+ 、Pr 4+ 、Cu 2+ or Nd 3+ The ionic radius of these ions is different from that of nickel ions in nickel oxide. Adding them as doping cations to the hole transport layer 12 can effectively improve the hole mobility of the hole transport layer 12.

[0070] In some embodiments, the hole transport layer 12 includes a direct contact layer on the side facing the perovskite layer 13 and an indirect contact layer on the side away from the perovskite layer 13, wherein the direct contact layer includes nickel oxide and reducing cations, and the indirect contact layer includes nickel oxide. In this configuration, the reducing cations can reduce the high-valent nickel ions on the interface of the hole transport layer 12 close to the perovskite layer 13 without excessively affecting the high-valent nickel ions within the hole transport layer 12. This can reduce the problem of perovskite degradation caused by deprotonation reaction when the high-valent nickel ions at the interface contact the perovskite layer 13, while not affecting the role of the high-valent nickel ions within the hole transport layer 12 in promoting hole transport.

[0071] In some embodiments, the direct contact layer refers to the portion of the hole transport layer closest to the perovskite layer.

[0072] In some embodiments, the non-direct contact layer refers to a portion of the hole transport layer that is at least separated from the perovskite layer by the direct contact layer.

[0073] In some embodiments, not less than 60% by mass of the reducing cations in the hole transport layer 12 are distributed in the direct contact layer. Not less than 60% of the reducing cations distributed in the direct contact layer can reduce the high-valent nickel ions on the interface of the hole transport layer close to the perovskite layer without excessively affecting the high-valent nickel ions inside the hole transport layer.

[0074] It can be understood that the reducing cation content in the direct contact layer can be 60%, 62%, 65%, 68%, 70%, 72%, 75%, 78%, 80%, 82%, 85%, 88%, 90%, 92%, 95%, 98%, 100% of the total mass of the reducing cations in the hole transport layer 12, and any value within the range formed by any two of the above values.

[0075] In some embodiments, the thickness of the direct contact layer is 0.1 nm to 20 nm; further, the thickness of the direct contact layer is 0.1 nm to 10 nm; by controlling the thickness of the direct contact layer within the above range, the reducing cations in the direct contact layer can effectively reduce the high-valent nickel ions at the interface to reduce their damage to the perovskite layer 13 material, while not affecting the promoting effect of the high-valent nickel ions in the hole transport layer 12 on hole transport.

[0076] It can be understood that the thickness of the direct contact layer can be 0.1nm, 0.5nm, 0.8nm, 1nm, 1.5nm, 2nm, 3nm, 4nm, 5nm, 6nm, 7nm, 8nm, 9nm, 10nm, 11nm, 12nm, 13nm, 14nm, 15nm, 16nm, 17nm, 18nm, 19nm, 20nm and any value within the range formed by any two of the above values.

[0077] In some embodiments, the thickness of the direct contact layer is 2 nm to 10 nm. This enables the perovskite cell to have both a high initial photoelectric conversion efficiency and a long lifespan, thus having better overall performance.

[0078] In some embodiments, the molar ratio of reducing cations to nickel in the direct contact layer ranges from 0.0001 to 0.2:1; further, from 0.002 to 0.05:1. Controlling the molar ratio of reducing cations to nickel in the direct contact layer within the above range can effectively alleviate perovskite degradation and increase the life of the perovskite battery 10. It is understood that the molar ratio of reducing cations to nickel in the direct contact layer can be 0.0001:1, 0.0005:1, 0.001:1, 0.002:1, 0.005:1, 0.01:1, 0.02:1, 0.05:1, 0.08:1, 0.1:1, 0.12:1, 0.15:1, 0.18:1, 0.2:1, and any ratio within the range formed by any two of the above ratios.

[0079] In some embodiments, the hole transport layer 12 further includes an indirect contact layer, which is located between the direct contact layer and the indirect contact layer, and the indirect contact layer includes nickel oxide and reducing cations. The indirect contact layer refers to the portion of the hole transport layer located between the direct contact layer and the indirect contact layer. The thickness of the indirect contact layer is 0.1nm to 20nm; further, it can be optionally 0.1nm to 10nm; further, it can be optionally 0.1nm to 5nm. It is understandable that the thickness of the indirect contact layer can be 0.1nm, 0.5nm, 0.8nm, 1nm, 2nm, 3nm, 5nm, 6nm, 8nm, 10nm, 12nm, 13nm, 15nm, 16nm, 18nm, 20nm, and any value within the range formed by any two of the above values.

[0080] In some embodiments, the hole transport layer 12 further includes an indirect contact layer, which is located between the direct contact layer and the indirect contact layer, and the indirect contact layer includes nickel oxide, reducing cations, and doped cations. The thickness of the indirect contact layer is 0.1 nm to 20 nm; further, it can be 0.1 nm to 10 nm; further, it can be 0.1 nm to 5 nm. It is understood that the thickness of the indirect contact layer can be 0.1 nm, 0.5 nm, 0.8 nm, 1 nm, 2 nm, 3 nm, 5 nm, 6 nm, 8 nm, 10 nm, 12 nm, 13 nm, 15 nm, 16 nm, 18 nm, 20 nm, and any value within the range formed by any two of the above values.

[0081] In some embodiments, the molar ratio of the reducing cation to the nickel element in the indirect contact layer ranges from 0.0001 to 0.2:1, and can further be 0.002 to 0.05:1; the molar ratio of the doping cation to the nickel element ranges from 0.0001 to 0.2:1, and can further be 0.001 to 0.1:1. This arrangement can effectively improve the hole mobility of the hole transport layer 12 and the photoelectric conversion efficiency of the perovskite cell 10 while maintaining good crystallinity in the indirect contact layer and the non-contact layer.

[0082] It is understood that the molar ratio of reducing cations to nickel in the indirect contact layer can be 0.0001:1, 0.0005:1, 0.001:1, 0.002:1, 0.005:1, 0.01:1, 0.02:1, 0.05:1, 0.08:1, 0.1:1, 0.12:1, 0.15:1, 0.18:1, 0.2:1 and the range formed by any two of the above ratios. the molar ratio of the doping cation to the nickel element can be 0.0001:1, 0.0005:1, 0.001:1, 0.002:1, 0.005:1, 0.01:1, 0.02:1, 0.05:1, 0.08:1, 0.1:1, 0.12:1, 0.15:1, 0.18:1, 0.2:1, and any ratio within the range formed by any two of the above ratios.

[0083] The second aspect of the present application provides a method for preparing the perovskite cell 10 of the first aspect of the present application, the method comprising the following steps S100 to S400:

[0084] Step S100: providing a first electrode layer 11 .

[0085] The first electrode layer 11 can serve as a substrate, and other functional layers of the perovskite cell 10 can be formed on the first electrode layer 11 .

[0086] In some embodiments, the first electrode layer 11 may be made of transparent conductive glass. The transparent conductive glass includes one or more of fluorine-doped tin dioxide (FTO), indium tin oxide (ITO), tungsten-doped indium oxide (IWO), aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (BZO), or indium zinc oxide (IZO).

[0087] Step S200 : preparing a hole transport layer 12 on the first electrode layer 11 .

[0088] With the first electrode layer 11 as a substrate, a hole transport layer 12 can be prepared on the first electrode layer 11 by magnetron sputtering or solution method. The hole transport layer 12 includes nickel oxide and reducing cations.

[0089] During the preparation process of the perovskite battery 10, high-valent nickel ions with a nickel valence greater than or equal to +3 are usually distributed in the hole transport layer 12. The high-valent nickel ions inside the hole transport layer 12 are conducive to hole transport, but the high-valent nickel ions at the interface between the hole transport layer 12 and the perovskite layer 13 will cause the perovskite to deprotonate when in contact with the perovskite layer 13, thereby degrading the perovskite and affecting the long-term stability of the perovskite layer 13 and the life of the perovskite battery 10. By adding reducing cations capable of reducing high-valent nickel ions to the hole transport layer 12, the reducing cations can undergo redox reactions with the high-valent nickel ions in the hole transport layer 12, so that the high-valent nickel ions are converted into low-valent nickel ions (such as Ni 2+ ), thereby alleviating the degradation of the perovskite, improving the long-term stability of the perovskite layer 13, and further increasing the life of the perovskite cell 10.

[0090] In some embodiments, the reducing cation comprises a lanthanide metal ion. Specifically, the lanthanide metal ion comprises Eu 2+ 、Yb 2+ 、Sm 2+ 、Ce 3+ 、Tb 3+ or Pr 3+ The lanthanide metal ions have an F orbital outside the nucleus, and the F orbital is half-filled. They have good reducing properties and can reduce the high-valent nickel ions in the hole transport layer 12 to low-valent nickel ions, thereby effectively alleviating the degradation of the perovskite.

[0091] In some embodiments, the hole transport layer 12 also includes doped cations that can cause lattice distortion in nickel oxide. Nickel oxide has a low intrinsic mobility, resulting in poor photoelectric conversion efficiency and fill factor in the perovskite cell 10 using nickel oxide as the hole transport layer 12. The present application adds doped cations that can cause lattice distortion in nickel oxide when preparing the hole transport layer 12. After these doped cations are added to the nickel oxide lattice, the difference in radius between the doped cations and the nickel ion radius causes the nickel oxide lattice to be distorted, resulting in defects in the nickel oxide crystals, thereby improving the hole mobility of the hole transport layer 12 and further improving the photoelectric conversion efficiency and fill factor of the perovskite cell 10.

[0092] In some embodiments, the doping cation includes Li + 、Cs + , Rb + 、Ag + Mg 2+ , Ca 2+ 、Zn 2+ 、Sr 2+ 、Ba 2+ 、Fe 2+ 、Fe 3+ 、Co 2+ 、Co 3+ 、Cu + 、Eu 3+ 、Yb 3+ 、Sm 2+ 、Ce 4+ 、Tb 4+ 、Pr 4+ 、Cu 2+ or Nd 3+ The ionic radius of these ions is different from that of nickel ions in nickel oxide. Adding them as doping cations to the hole transport layer 12 can effectively improve the hole mobility of the hole transport layer 12.

[0093] In some embodiments, the hole transport layer 12 is formed by forming a multi-layer hole transport monolayer by magnetron sputtering on the first electrode layer 11 through multiple cycles of film deposition. The multi-layer hole transport monolayer is stacked on the first electrode layer 11 to form the hole transport layer 12. The use of magnetron sputtering to form each hole transport monolayer facilitates doping of reducing cations and doping cations at different locations in the hole transport layer 12.

[0094] In some embodiments, when depositing each hole transport monolayer by magnetron sputtering, reducing cations are doped into the hole transport monolayer in the hole transport layer 12 near the perovskite layer 13. Since the high-valent nickel ions within the hole transport layer 12 are conducive to hole transport, the high-valent nickel ions at the interface between the hole transport layer 12 and the perovskite layer 13 cause the perovskite to undergo a deprotonation reaction, thereby degrading the perovskite. By doping the hole transport monolayer in the hole transport layer 12 in contact with the perovskite layer 13 with reducing cations, the degradation of the perovskite can be better alleviated, and the hole transport layer 12 can have better hole transport performance.

[0095] In one specific example, the hole transport layer 12 is formed by a single-target magnetron sputtering method as follows:

[0096] A single-target magnetron sputtering method is used to deposit a direct contact layer, an indirect contact layer, and an indirect contact layer; wherein the direct contact layer refers to a hole transport single layer that is in direct contact with the perovskite layer 13; the indirect contact layer refers to a hole transport single layer that is only separated from the perovskite layer by the direct contact layer; and the indirect contact layer refers to other hole transport single layers except the direct contact layer and the indirect contact layer.

[0097] First, a first hole transport monolayer 121 is deposited on the first electrode layer 11 by magnetron sputtering as a non-direct contact layer. In the process of preparing the non-direct contact layer, doped cations may be selectively introduced or not introduced into the nickel oxide target material selected, so that the prepared non-direct contact layer contains or does not contain a certain amount of doped cations; a second hole transport monolayer 122 is deposited on the non-direct contact layer by magnetron sputtering as an indirect contact layer. In the process of preparing the indirect contact layer, reducing cations and doped cations may be selectively introduced or not introduced into the nickel oxide target material selected, so that the prepared indirect contact layer contains or does not contain a certain amount of reducing cations and / or doped cations; then, a third hole transport monolayer 123 is deposited on the indirect contact layer as a direct contact layer. In the process of preparing the direct contact layer, reducing cations are introduced into the nickel oxide target material selected, so that the prepared direct contact layer contains a certain amount of reducing cations.

[0098] It should be noted that since the indirect contact layer is in contact with the direct contact layer and the direct contact layer contains reducing cations; based on factors such as ion diffusion, even if reducing cations are not introduced into the indirect contact layer during preparation, a certain amount of reducing cations will still exist in the indirect contact layer of the finally formed perovskite battery 10.

[0099] In some embodiments, the direct contact layer, indirect contact layer, and non-contact layer are all prepared by radio frequency sputtering. The working gases used in the radio frequency sputtering process are argon and oxygen, and the ratio of oxygen flow / (oxygen flow + argon flow) ranges from 0.001 to 0.5:1. The temperature range of the deposition table during sputtering is 20°C to 300°C. The vacuum degree of the reaction chamber during sputtering ranges from 1.0 -3 Pa~1.0 -1 Pa. Sputtering power density range is 5W / cm 2 ~50W / cm 2 The deposition time range is 5s to 180s.

[0100] It can be understood that the ratio of oxygen intake / (oxygen intake + argon intake) can be 0.001:1, 0.005:1, 0.008:1, 0.01:1, 0.015:1, 0.02:1, 0.05:1, 0.08:1, 0.1:1, 0.15:1, 0.2:1, 0.25:1, 0.3:1, 0.35:1, 0.4:1, 0.45:1, 0.5:1 and any ratio within the range formed by any two of the above ratios. The temperature of the deposition table can be 20°C, 50°C, 80°C, 100°C, 120°C, 140°C, 150°C, 160°C, 180°C, 200°C, 220°C, 240°C, 250°C, 260°C, 280°C, 300°C, or any value within the range formed by any two of the above values. The vacuum degree of the reaction chamber can be 1.0 -3 Pa, 5.0 -3 Pa, 8.0 -3 Pa, 1.0 -2 Pa, 5.0 -2 Pa, 8.0 -2 Pa, 1.0 -1 Pa, and any value within the range formed by any two of the above values. The sputtering power density can be 5W / cm 2 , 8W / cm 2 、10W / cm 2 , 12W / cm 2 、14W / cm 2 , 15W / cm 2 、16W / cm 2 、18W / cm 2 , 20W / cm 2 , 22W / cm 2 , 24W / cm 2 , 25W / cm 2 , 26W / cm 2 , 28W / cm 2 、30W / cm2 、32W / cm 2 、34W / cm 2 、35W / cm 2 、36W / cm 2 、38W / cm 2 , 40W / cm 2 , 42W / cm 2 , 44W / cm 2 , 45W / cm 2 、46W / cm 2 , 48W / cm 2 , 50W / cm 2 The deposition time may be 5 s, 10 s, 20 s, 30 s, 40 s, 50 s, 60 s, 70 s, 80 s, 90 s, 100 s, 110 s, 120 s, 130 s, 140 s, 150 s, 160 s, 170 s, 180 s, or any value within the range formed by any two of the above values.

[0101] In some embodiments, the molar ratio of the reducing cation to nickel in the direct contact layer and the indirect contact layer doped with reducing cations ranges from 0.0001 to 0.2:1, and may optionally range from 0.002 to 0.05:1. Controlling the molar ratio of the reducing cation to nickel within this range effectively mitigates perovskite degradation and improves the life of the perovskite cell while maintaining good crystallinity in the direct and indirect contact layers. It will be appreciated that the molar ratio of the reducing cation to the nickel element may be 0.0001:1, 0.0006:1, 0.002:1, 0.008:1, 0.01:1, 0.015:1, 0.02:1, 0.03:1, 0.04:1, 0.05:1, 0.06:1, 0.07:1, 0.08:1, 0.09:1, 0.1:1, 0.12:1, 0.14:1, 0.16:1, 0.18:1, 0.2:1, and any value within the range formed by any two of the above values.

[0102] In some embodiments, the molar ratio of the dopant cation to nickel in the indirect contact layer and the indirect contact layer doped with the dopant cation is in the range of 0.0001 to 0.2:1, and can optionally be in the range of 0.001 to 0.1:1. Controlling the molar ratio of the dopant cation to nickel within this range effectively improves the hole mobility of the hole transport layer 12 and the photoelectric conversion efficiency of the perovskite cell 10 while maintaining good crystallinity in the indirect contact layer and the indirect contact layer. It can be understood that the molar ratio range of the doping cation to the nickel element is 0.0001:1, 0.0005:1, 0.001:1, 0.005:1, 0.01:1, 0.02:1, 0.03:1, 0.04:1, 0.05:1, 0.06:1, 0.08:1, 0.1:1, 0.12:1, 0.15:1, 0.18:1, 0.2:1 and any value within the range formed by any two of the above values.

[0103] Specifically, the total number of hole transport monolayers in the hole transport layer 12 can range from 1 to 50 layers, and can optionally be 4 to 20 layers. Depending on the effect of magnetron sputtering, the thickness of each hole transport monolayer ranges from 0.1 nm to 20 nm, and can optionally be 0.5 nm to 10 nm. Depending on the effect of magnetron sputtering, the density of the hole transport monolayer ranges from 1% to 100%, and can optionally be 85% to 100%. It is understood that the number of hole transport monolayers can be 1 layer, 4 layers, 6 layers, 8 layers, 10 layers, 12 layers, 14 layers, 15 layers, 16 layers, 18 layers, 20 layers, 25 layers, 28 layers, 30 layers, 32 layers, 35 layers, 38 layers, 40 layers, 42 layers, 45 layers, 48 ​​layers, 50 layers, and any integer value within the range formed by any two of the above values. The thickness of each hole transport monolayer may be 0.1 nm, 0.5 nm, 1 nm, 2 nm, 4 nm, 5 nm, 6 nm, 8 nm, 10 nm, 12 nm, 14 nm, 15 nm, 16 nm, 18 nm, 20 nm, or any value within the range formed by any two of the aforementioned values. The density of each hole transport monolayer may be 1%, 5%, 8%, 10%, 12%, 15%, 18%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, 95%, 100%, or any value within the range formed by any two of the aforementioned values.

[0104] In some embodiments, the hole transport layer 12 is formed by a multi-target magnetron co-sputtering method as follows:

[0105] First, a first hole transport monolayer 121 is deposited on the first electrode layer 11 by magnetron sputtering as an indirect contact layer. In the process of preparing the indirect contact layer, the nickel oxide target material selected can be selectively introduced or not introduced with doped cations, so that the prepared indirect contact layer contains or does not contain a certain amount of doped cations; a second hole transport monolayer 122 is deposited on the indirect contact layer by magnetron sputtering as an indirect contact layer. In the process of preparing the indirect contact layer, the nickel oxide target material containing doped cations and the AO target material can be simultaneously selected. n Target; Among them, AO n represents the oxide corresponding to the reducing cation, and n represents the number of oxygen atoms; the prepared indirect contact layer contains a certain amount of reducing cations and doped cations; then, a third hole transport monolayer 123 is deposited on the indirect contact layer by magnetron sputtering as a direct contact layer. In the preparation process of the direct contact layer, nickel oxide target and AO can be selected at the same time. n target material, so that the prepared direct contact layer contains a certain amount of reducing cations.

[0106] In some embodiments, the direct contact layer, indirect contact layer, and indirect contact layer are all prepared by radio frequency sputtering. The working gases used in the radio frequency sputtering process are argon and oxygen, and the ratio of oxygen flow / (oxygen flow + argon flow) ranges from 0.001 to 0.5:1. The temperature range of the deposition table during co-sputtering is 20°C to 300°C. The vacuum range of the reaction chamber during co-sputtering is 1.0 -3 Pa~1.0 -1 Pa. The power density range of the cation-doped nickel oxide target during co-sputtering is 5W / cm 2 ~50W / cm 2 AO during co-sputtering n The power density of the target is in the range of 2W / cm 2 ~40W / cm 2 The deposition time range is 5s to 180s.

[0107] It can be understood that the ratio of oxygen intake / (oxygen intake + argon intake) can be 0.001:1, 0.005:1, 0.008:1, 0.01:1, 0.015:1, 0.02:1, 0.05:1, 0.08:1, 0.1:1, 0.15:1, 0.2:1, 0.25:1, 0.3:1, 0.35:1, 0.4:1, 0.45:1, 0.5:1 and any ratio within the range formed by any two of the above ratios. The temperature of the deposition table can be 20°C, 50°C, 80°C, 100°C, 120°C, 140°C, 150°C, 160°C, 180°C, 200°C, 220°C, 240°C, 250°C, 260°C, 280°C, 300°C, or any value within the range formed by any two of the above values. The vacuum degree of the reaction chamber can be 1.0 -3 Pa, 5.0 -3 Pa, 8.0 -3 Pa, 1.0 -2 Pa, 5.0 -2 Pa, 8.0 -2 Pa, 1.0 -1 Pa, and any value within the range formed by any two of the above values. The power density of the nickel oxide target doped with cations during co-sputtering can be 5W / cm 2 , 8W / cm 2 、10W / cm 2 , 12W / cm 2 、14W / cm 2 , 15W / cm 2 、16W / cm 2 、18W / cm 2 , 20W / cm 2 , 22W / cm 2 , 24W / cm 2 , 25W / cm 2 , 26W / cm 2 , 28W / cm 2 、30W / cm 2 、32W / cm 2 、34W / cm 2 、35W / cm 2 、36W / cm 2 、38W / cm 2 , 40W / cm 2 , 42W / cm 2 , 44W / cm 2 , 45W / cm 2 、46W / cm 2 , 48W / cm 2 , 50W / cm2 And any value within the range formed by any two of the above values. n The power density of the target can be 2W / cm 2 , 5W / cm 2 、10W / cm 2 , 15W / cm 2 , 20W / cm 2 , 25W / cm 2 、30W / cm 2 、35W / cm 2 , 40W / cm 2 The deposition time may be 5 s, 10 s, 20 s, 30 s, 40 s, 50 s, 60 s, 70 s, 80 s, 90 s, 100 s, 110 s, 120 s, 130 s, 140 s, 150 s, 160 s, 170 s, 180 s, or any value within the range formed by any two of the above values.

[0108] In some embodiments, the molar ratio of the reducing cations to the nickel element in the direct contact layer and the indirect contact layer doped with reducing cations ranges from 0.0001 to 0.2:1, and may optionally range from 0.002 to 0.05:1. Controlling the molar ratio of the reducing cations to the nickel element within this range effectively mitigates perovskite degradation and improves the lifespan of the perovskite cell 10 while maintaining good crystallinity in the direct and indirect contact layers. It will be appreciated that the molar ratio of the reducing cation to the nickel element may be 0.0001:1, 0.0006:1, 0.002:1, 0.008:1, 0.01:1, 0.015:1, 0.02:1, 0.03:1, 0.04:1, 0.05:1, 0.06:1, 0.07:1, 0.08:1, 0.09:1, 0.1:1, 0.12:1, 0.14:1, 0.16:1, 0.18:1, 0.2:1, and any value within the range formed by any two of the above values.

[0109] In some embodiments, the molar ratio of the dopant cation to nickel in the indirect contact layer and the indirect contact layer doped with the dopant cation is in the range of 0.0001 to 0.2:1, and can optionally be in the range of 0.001 to 0.1:1. Controlling the molar ratio of the dopant cation to nickel within this range effectively improves the hole mobility of the hole transport layer 12 and the photoelectric conversion efficiency of the perovskite cell 10 while maintaining good crystallinity in the indirect contact layer and the indirect contact layer. It can be understood that the molar ratio range of the doping cation to the nickel element is 0.0001:1, 0.0005:1, 0.001:1, 0.005:1, 0.01:1, 0.02:1, 0.03:1, 0.04:1, 0.05:1, 0.06:1, 0.08:1, 0.1:1, 0.12:1, 0.15:1, 0.18:1, 0.2:1 and any value within the range formed by any two of the above values.

[0110] Specifically, the total number of hole transport monolayers in the hole transport layer 12 can range from 1 to 30 layers, and can optionally range from 4 to 20 layers. Depending on the effect of magnetron sputtering, the thickness of the hole transport monolayer can range from 0.2 nm to 20 nm, and can optionally range from 1 nm to 10 nm. Depending on the effect of magnetron sputtering, the density of the hole transport monolayer can range from 1% to 100%, and can optionally range from 85% to 100%.

[0111] It is understood that the thickness of the second hole transport monolayer 122, which serves as an indirect contact layer, is 0.1 to 20 nm, further preferably 0.1 to 10 nm, and further preferably 0.1 to 5 nm; the thickness of the third hole transport monolayer 123, which serves as a direct contact layer, is 0.1 to 20 nm, further preferably 0.1 to 10 nm, and further preferably 0.1 to 5 nm. The total number of hole transport monolayers can be 1, 4, 6, 8, 10, 12, 14, 15, 16, 18, 20, 25, 28, 30, or any integer within the range formed by any two of the aforementioned values. The thickness of each hole transport monolayer may be 0.2 nm, 0.5 nm, 1 nm, 2 nm, 4 nm, 5 nm, 6 nm, 8 nm, 10 nm, 12 nm, 14 nm, 15 nm, 16 nm, 18 nm, 20 nm, or any value within the range formed by any two of the aforementioned values. The density of each hole transport monolayer may be 1%, 5%, 8%, 10%, 12%, 15%, 18%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, 95%, 100%, or any value within the range formed by any two of the aforementioned values.

[0112] Step S300: Prepare a perovskite layer 13 on the surface of the hole transport layer 12 facing away from the first electrode layer 11.

[0113] After forming the above-mentioned hole transport layer 12 on the first electrode layer 11, a perovskite layer 13 is prepared as the light-absorbing layer of the perovskite solar cell 10 on the surface of the hole transport layer 12 facing away from the first electrode layer 11.

[0114] In some embodiments, the material of the perovskite layer 13 may include one or more of ABX3 or A2CDX6, where A includes organic cations, Li + , Na + , K + , Rb + or Cs <000(0183> or one or more of them; B includes Pb 2+ , Sn 2+ , Be 2+ , Mg 2+ , Ca 2+ , Sr 2+ , Ba 2+ , Zn 2+ , Ge 2+ , Fe 2+ , Co 2+ , Cu 2+ or Ni 2+ or one or more of them; C includes Cs + , Ag + , K + or Ru + or one or more of them; D includes Bi 3+ , Ni 3+ , Fe 3+ , Cu 3+ , Sb 3+ or In 3+ or one or more of them; X includes Br - or I - or one or more of them. For example, the material of the perovskite layer 13 may be one or more of CH3NH3PbI3, CH3NH3SnI3, CH3NH3PbI2Br or CH3NH3Pb(I 1-x Br x )3 (where 0 < x < 1).

[0115] Step S400: Prepare a second electrode layer 14 on the side of the perovskite layer 13 facing away from the hole transport layer 12.

[0116] After preparing and forming the perovskite layer 13, the second electrode layer 14 can be prepared on the surface of the perovskite layer 13 facing away from the hole transport layer 12 by a vacuum thermal evaporation coating process, thereby forming the perovskite solar cell 10.

[0117] In some embodiments, the material of the second electrode layer 14 may include one or more of silver, copper, carbon, gold, aluminum, indium tin oxide, tungsten-doped indium oxide, aluminum-doped zinc oxide, boron-doped zinc oxide, or indium zinc oxide.

[0118] In some embodiments, an electron transport layer may be further provided between the perovskite layer 13 and the second electrode layer 14 for transporting electrons and inhibiting electron backflow. The material of the electron transport layer includes at least one of imide compounds, quinone compounds, fullerenes and their derivatives, metal oxides, semiconductor material oxides, titanates, fluorides and their derivatives, and materials obtained by doping or passivation thereof. Exemplarily, the imide compound includes at least one of phthalimide, succinimide, N-bromosuccinimide, glutarimide or maleimide. Exemplarily, the quinone compound includes at least one of benzoquinone, naphthoquinone, phenanthrenequinone or anthraquinone. Exemplarily, fullerenes and their derivatives include fullerene C 60 , fullerene C 70 、PCBM([6,6]-phenyl-C 61 -methyl butyrate), [6,6]-phenyl C 71 Methyl butyrate (PC 71 BM). Exemplarily, the metal element in the metal oxide includes at least one of Mg, Cd, Zn, In, Pb, W, Sb, Bi, Hg, Ti, Ag, Mn, Fe, V, Sn, Zr, Sr, Ga and Cr. Optionally, the metal oxide includes at least one of tin oxide (SnO2), zinc oxide (ZnO), and titanium oxide (TiO2). Exemplarily, the semiconductor material oxide includes silicon oxide. Exemplarily, the titanate includes at least one of strontium titanate and calcium titanate. Exemplarily, the fluoride includes at least one of lithium fluoride and calcium fluoride.

[0119] In some embodiments, the perovskite cell 10 may further include functional layers such as a blocking layer and a passivation layer. The blocking layer includes a hole blocking layer or an electron blocking layer; the passivation layer is used to passivate perovskite interface defects.

[0120] In some embodiments, the perovskite cell 10 may also be a stacked cell containing a perovskite cell, and the stacked perovskite cell includes but is not limited to a perovskite-perovskite stacked cell, a perovskite-crystalline silicon stacked cell, a perovskite-heterojunction stacked cell, and the like.

[0121] The third aspect of the present application provides a photovoltaic module, comprising the perovskite cell 10 of the first aspect of the present application or the perovskite cell 10 prepared by the preparation method of the second aspect of the present application. The photovoltaic module of the present application has a long life by adopting the above-mentioned perovskite cell 10 of the present application.

[0122] The above-mentioned photovoltaic module includes one or more perovskite cells 10, which can be selected according to the specific application scenario; further, the above-mentioned photovoltaic module includes multiple perovskite cells 10, and the multiple perovskite cells 10 are connected in series or in parallel to form a cell sheet.

[0123] In some embodiments, the photovoltaic module further includes a photovoltaic glass layer, a bonding layer, and a back sheet.

[0124] Adhesive layers are provided on both surfaces of the cell, a back plate is provided on the surface of one of the adhesive layers away from the cell, and a photovoltaic glass layer is provided on the surface of the other adhesive layer away from the cell.

[0125] The photovoltaic glass layer and the back panel are used to protect the perovskite cell 10, and have the functions of sealing, insulation and waterproofing; the adhesive layer plays the role of bonding the photovoltaic glass layer and the cell, and bonding the back panel and the cell.

[0126] Optionally, the photovoltaic glass layer is made of tempered glass, the back panel is made of TPT (polyvinyl fluoride) or TPE (thermoplastic elastomer), and the adhesive layer is made of EVA (polyethylene-polyvinyl acetate copolymer).

[0127] Furthermore, the photovoltaic module further includes a junction box and an outer frame.

[0128] The junction box is used to protect the power generation system of the entire photovoltaic module. It is equivalent to a current transfer station. When a battery cell short-circuits, the junction box will automatically disconnect the short-circuited battery string.

[0129] The outer frame can support and protect the entire photovoltaic module. The frame can be made of aluminum alloy, which has excellent strength and corrosion resistance.

[0130] Furthermore, silicone is used to bond and seal the connection between the frame and other parts of the photovoltaic module. Photovoltaic modules can convert solar energy into electrical energy, which can be stored in batteries or used to drive loads.

[0131] In some embodiments, the photovoltaic component is a solar panel.

[0132] A fourth aspect of the present application provides a photovoltaic system, comprising the photovoltaic assembly of the third aspect of the present application.

[0133] The photovoltaic system utilizes the perovskite cell 10 in the above photovoltaic module to directly convert solar radiation energy into electrical energy with high efficiency and good stability; further, the above photovoltaic system is a photovoltaic power generation system.

[0134] Photovoltaic modules are the core part of photovoltaic power generation systems. The above photovoltaic system includes one or more photovoltaic modules, which can be selected according to the specific application scenario; further, when the above photovoltaic system includes multiple photovoltaic modules, the multiple photovoltaic modules form a photovoltaic array.

[0135] The above photovoltaic system can be an independent photovoltaic power generation system or a grid-connected photovoltaic power generation system.

[0136] An independent photovoltaic power generation system consists of a photovoltaic array, a battery pack, a charge controller, a power electronic converter (inverter), and a load. Its operating principle is that solar radiation energy is first converted into electrical energy by the photovoltaic array, then converted by the power electronic converter to power the load. Meanwhile, excess electrical energy is stored as chemical energy in an energy storage device after passing through the charge controller. In this way, when sunlight is insufficient, the energy stored in the battery can be converted into 220V, 50Hz AC electricity after passing through the power electronic inverter, filtering, and power frequency transformer to supply the AC load.

[0137] A grid-connected photovoltaic power generation system consists of a photovoltaic array, a high-frequency DC / DC boost circuit, a power electronic converter (inverter), and system monitoring. Its operating principle is that solar radiation energy is converted by the photovoltaic array, then converted to high-voltage DC through high-frequency DC conversion. This is then inverted by a power electronic inverter and output to the grid as a sinusoidal AC current with a frequency consistent with the grid voltage.

[0138] The above two photovoltaic power generation systems have their own characteristics and can be selected according to specific application scenarios.

[0139] Please refer to FIG. 2 . The fifth aspect of the present application provides an electrical device including the photovoltaic system of the fourth aspect of the present application.

[0140] In some embodiments, the power-consuming device is a common device that includes the solar cell of the present application, such as those used in the fields of communications, transportation, industry, agriculture, and lighting. Examples of the power-consuming device include satellites, communications equipment, traffic lights, lighthouses, wireless phone booths, monitoring equipment for oil drilling, power supply systems, camping lanterns, electric vehicles, electronic device chargers, and building curtain walls.

[0141] The sixth aspect of the present application provides a power generation device, which includes the photovoltaic system of the fourth aspect of the present application. It can be understood that in the above-mentioned power generation device, the photovoltaic system is a photovoltaic power generation system.

[0142] Below, the embodiment of the present application is described. The embodiment described below is exemplary and is only used to explain the present application, and is not to be construed as limiting the present application. Where specific techniques or conditions are not specified in the embodiments, the techniques or conditions described in the literature in this area or the product specifications are used. Reagents or instruments used that do not specify the manufacturer are conventional products that can be obtained commercially.

[0143] Example 1:

[0144] 1) Take a set of 10cm*10cm FTO conductive glass and use a laser marking machine to etch away 0.5cm areas on both sides of the FTO conductive glass. After cleaning with a detergent, the FTO conductive glass is ultrasonicated in deionized water, ethanol, and acetone for 10 minutes. After the ultrasonication is completed, it is blown dry with nitrogen for use.

[0145] 2) The dried FTO conductive glass was used as the first electrode layer, and three first hole transport monolayers with a single layer thickness of 3 nm were prepared on the FTO conductive glass by magnetron sputtering as indirect contact layers, and then one second hole transport monolayer with a single layer thickness of 3 nm was prepared as an indirect contact layer, and finally one third hole transport monolayer with a single layer thickness of 3 nm was prepared as a direct contact layer.

[0146] Among them, the non-direct contact layer is made of doped cations Li + Nickel oxide target, Li in the target + The molar ratio of nickel to nickel is 0.02:1; the indirect contact layer contains reducing cation Eu 2+ and doped cation Li + Nickel oxide target, Eu in the target 2+ The molar ratio of Li to nickel is 0.005:1. + The molar ratio of nickel to nickel is 0.0001:1; the direct contact layer contains reducing cation Eu 2+ Nickel oxide target, Eu in the target 2+ The molar ratio of argon to nickel is 0.005:1. The working gas used in the sputtering process is a mixture of argon and oxygen, and the ratio of oxygen flow: (oxygen flow + argon flow) is 2:300. The temperature of the deposition table during sputtering is controlled at 100℃~150℃. The vacuum degree of the reaction chamber during sputtering is controlled at 1.0*10 -2 Pa~1.0*10 -1 Pa. Sputtering power density is 10W / cm 2 The deposition time for each layer was 20 s.

[0147] 3) After laser scribing, the FTO conductive glass with the nickel oxide hole transport layer deposited was placed in an ultrasonic cleaning device for 1 minute and dried at 100°C for 10 minutes. A layer of Cs with a thickness of about 500 nm was coated on the surface of the nickel oxide hole transport layer facing away from the FTO conductive glass. 0.1 FA 0.85 MA 0.05 PbI 2.7 Br 0.3 The perovskite film was continuously blown on the film surface with an air knife for 30 seconds, and then the film was transferred to a heating stage and annealed at 100°C for 10 minutes to form a perovskite layer.

[0148] 4) Using vacuum thermal evaporation coating process, in 1*10 -6 Torr, and then evaporate 50nm thick C 60 , 20nm thick BCP and 80nm thick Cu electrode, laser scribing followed by evaporation of 100nm thick Cu electrode;

[0149] 5) Through laser scribing, large-area perovskite devices are formed into a series structure to complete the preparation of perovskite cells.

[0150] Example 2:

[0151] This embodiment is basically the same as embodiment 1 except that the indirect contact layer and the indirect contact layer in the hole transport layer are doped with cations Li + The molar ratio of nickel to nickel is 0.001:1.

[0152] Example 3:

[0153] This embodiment is basically the same as embodiment 1 except that the indirect contact layer and the indirect contact layer in the hole transport layer are doped with cations Li + The molar ratio of nickel to nickel is 0.02:1.

[0154] Example 4:

[0155] This embodiment is basically the same as embodiment 1 except that the indirect contact layer and the indirect contact layer in the hole transport layer are doped with cations Li + The molar ratio of nickel to nickel is 0.1:1.

[0156] Example 5:

[0157] This embodiment is basically the same as embodiment 1 except that the indirect contact layer and the indirect contact layer in the hole transport layer are doped with cations Li + The molar ratio of nickel to nickel is 0.15:1.

[0158] Example 6:

[0159] This embodiment is basically the same as embodiment 1 except that the indirect contact layer and the indirect contact layer in the hole transport layer are doped with cations Li + The molar ratio of nickel to nickel is 0.2:1.

[0160] Example 7:

[0161] This embodiment is basically the same as embodiment 1, except that: in the indirect contact layer and the direct contact layer in the hole transport layer, the reducing cation Eu 2+ The molar ratio of nickel to nickel is 0.0001:1.

[0162] Example 8:

[0163] This embodiment is basically the same as embodiment 1, except that: in the indirect contact layer and the direct contact layer in the hole transport layer, the reducing cation Eu 2+ The molar ratio of nickel to nickel is 0.002:1.

[0164] Example 9:

[0165] This embodiment is basically the same as embodiment 1, except that: in the indirect contact layer and the direct contact layer in the hole transport layer, the reducing cation Eu 2+ The molar ratio of nickel to nickel is 0.05:1.

[0166] Example 10:

[0167] This embodiment is basically the same as embodiment 1, except that: in the indirect contact layer and the direct contact layer in the hole transport layer, the reducing cation Eu 2+ The molar ratio of nickel to nickel is 0.1:1.

[0168] Example 11:

[0169] This embodiment is basically the same as embodiment 1, except that: in the indirect contact layer and the direct contact layer in the hole transport layer, the reducing cation Eu 2+ The molar ratio of nickel to nickel is 0.2:1.

[0170] Example 12:

[0171] This embodiment is basically the same as embodiment 1, except that the reducing cations in the indirect contact layer and the direct contact layer in the hole transport layer are Yb 2+ , and Yb 2+ The molar ratio of Mg to nickel is 0.008:1; in the indirect contact layer and the indirect contact layer, the doped cation is Mg 2+ , Mg 2+ The molar ratio of nickel to nickel is 0.015:1.

[0172] Example 13:

[0173] This embodiment is basically the same as embodiment 12 except that the indirect contact layer and the indirect contact layer in the hole transport layer are doped with cationic Mg. 2+ The molar ratio of nickel to nickel is 0.12:1.

[0174] Example 14:

[0175] This embodiment is basically the same as embodiment 12 except that: in the indirect contact layer and the direct contact layer in the hole transport layer, the reducing cation Yb 2+ The molar ratio of nickel to nickel is 0.1:1.

[0176] Example 15:

[0177] This embodiment is basically the same as embodiment 1, except that the reducing cations in the indirect contact layer and the direct contact layer in the hole transport layer are Ce. 3+ , and Ce 3+ The molar ratio of Sr to nickel is 0.006:1; in the indirect contact layer and the indirect contact layer, the doped cation is Sr 2+ , Sr 2+ The molar ratio of nickel to nickel is 0.05:1.

[0178] Example 16:

[0179] This embodiment is basically the same as embodiment 15, except that the doping cations in the indirect contact layer and the indirect contact layer in the hole transport layer are Sr 2+ The molar ratio of nickel to nickel is 0.15:1.

[0180] Example 17:

[0181] This embodiment is basically the same as embodiment 15, except that: in the indirect contact layer and the direct contact layer in the hole transport layer, the reducing cation Ce 3+ The molar ratio of nickel to nickel is 0.1:1.

[0182] Example 18:

[0183] This embodiment is basically the same as Example 1, with the only difference being that in step 2), the dried FTO conductive glass is used as the first electrode layer, and three first hole transport monolayers with a single layer thickness of 3 nm are first prepared on the FTO conductive glass by magnetron sputtering as indirect contact layers, and then one second hole transport monolayer with a single layer thickness of 3 nm is prepared as an indirect contact layer, and finally one third hole transport monolayer with a single layer thickness of 2 nm is prepared as a direct contact layer. The doping materials and proportions of each layer are the same as in Example 1.

[0184] Example 19:

[0185] This embodiment is basically the same as Example 1, with the only difference being that in step 2), the dried FTO conductive glass is used as the first electrode layer, and three first hole transport monolayers with a single layer thickness of 3 nm are first prepared on the FTO conductive glass by magnetron sputtering as indirect contact layers, and then one second hole transport monolayer with a single layer thickness of 3 nm is prepared as an indirect contact layer, and finally one third hole transport monolayer with a single layer thickness of 0.1 nm is prepared as a direct contact layer. The doping materials and proportions of each layer are the same as in Example 1.

[0186] Example 20:

[0187] This embodiment is basically the same as Example 1, with the only difference being that in step 2), the dried FTO conductive glass is used as the first electrode layer, and three first hole transport monolayers with a single layer thickness of 3 nm are first prepared on the FTO conductive glass by magnetron sputtering as indirect contact layers, and then one second hole transport monolayer with a single layer thickness of 3 nm is prepared as an indirect contact layer, and finally one third hole transport monolayer with a single layer thickness of 5 nm is prepared as a direct contact layer. The doping materials and proportions of each layer are the same as in Example 1.

[0188] Example 21:

[0189] This embodiment is basically the same as Example 1, with the only difference being that in step 2), the dried FTO conductive glass is used as the first electrode layer, and three first hole transport monolayers with a single layer thickness of 3 nm are first prepared on the FTO conductive glass by magnetron sputtering as indirect contact layers, and then one second hole transport monolayer with a single layer thickness of 3 nm is prepared as an indirect contact layer, and finally one third hole transport monolayer with a single layer thickness of 10 nm is prepared as a direct contact layer. The doping materials and proportions of each layer are the same as in Example 1.

[0190] Example 22:

[0191] This embodiment is basically the same as Example 1, with the only difference being that in step 2), the dried FTO conductive glass is used as the first electrode layer, and three first hole transport monolayers with a single layer thickness of 3 nm are first prepared on the FTO conductive glass by magnetron sputtering as indirect contact layers, and then one second hole transport monolayer with a single layer thickness of 3 nm is prepared as an indirect contact layer, and finally one third hole transport monolayer with a single layer thickness of 20 nm is prepared as a direct contact layer. The doping materials and proportions of each layer are the same as in Example 1.

[0192] Example 23:

[0193] This embodiment is basically the same as embodiment 18, except that in step 2), no doping cations are introduced into the indirect contact layer, and only doping cations Li are introduced into the indirect contact layer. + , the rest is the same as Example 18.

[0194] Example 24:

[0195] This embodiment is basically the same as embodiment 18, except that: in step 2), the dried FTO conductive glass is used as the first electrode layer, and five layers of nickel oxide with a thickness of 3 nm are first prepared on the FTO conductive glass by magnetron sputtering as an indirect contact layer, and then a layer of nickel oxide with a thickness of 3 nm is prepared as an indirect contact layer, and then a third hole transport layer with a thickness of 5 nm is prepared as a direct contact layer (the direct contact layer is doped with Eu). 2+ The doping ratio of the direct contact layer is the same as that of Example 18.

[0196] Example 25:

[0197] This embodiment is basically the same as Example 1, with the only difference being that in step 2), the dried FTO conductive glass is used as the first electrode layer, and three first hole transport monolayers with a single layer thickness of 3 nm are first prepared on the FTO conductive glass by magnetron sputtering as indirect contact layers, and then one second hole transport monolayer with a single layer thickness of 2 nm is prepared as an indirect contact layer, and finally one third hole transport monolayer with a single layer thickness of 3 nm is prepared as a direct contact layer. The doping materials and proportions of each layer are the same as in Example 1.

[0198] Comparative Example 1:

[0199] This comparative example is basically the same as Example 1, with the only difference being that the hole transport layer is not doped with reducing cations and doped cations; that is, when preparing the indirect contact layer, indirect contact layer, and direct contact layer in the hole transport layer, nickel oxide targets are used, and the targets are not doped with reducing cations and doped cations.

[0200] Comparative Example 2:

[0201] This comparative example is basically the same as Example 1, except that the hole transport layer is not doped with reducing cations; that is, when preparing the indirect contact layer and the direct contact layer in the hole transport layer, the target material is not doped with reducing cations.

[0202] Test method:

[0203] 1) Cation type and content test:

[0204] X-ray photoelectron spectroscopy (XPS) was used to characterize the prepared direct contact layer, indirect contact layer, and indirect contact layer. After collecting the photoelectron pulse signal, an energy spectrum was drawn with the photoelectron binding energy as the horizontal coordinate and the relative intensity as the vertical coordinate. After correction and fitting, the positions of the peaks related to nickel ions, doped cations, and reducing cations were determined by standard cards, and the valence states of nickel ions, doped cations, and reducing cations were confirmed (the photoelectron binding energy of elements is different in different valence states). According to the peak intensity, the values ​​of doped cations: nickel ions and the values ​​of reducing cations: nickel ions can be obtained.

[0205] 2) Photovoltaic conversion efficiency test of perovskite cells:

[0206] Using a solar simulator under standard test conditions (total irradiance 100mW / cm 2 The photoelectric conversion efficiency of perovskite cells was tested using a 1.5G AM spectrum (with a cell temperature of 25°C and a spectral distribution of 1.5G). The readings were recorded using a Keithley 2400 series digital multimeter. The photoelectric conversion efficiency of perovskite cells is calculated as follows: PCE = Pout / Pin = Voc × Jsc × [(Vmpp × Jmpp) / (Voc × Jsc)] / Pin = Voc × Jsc × FF / Pin.

[0207] Among them, Pout, Pin, Voc, Jsc, Vmpp, Jmpp and FF are the battery output power, incident light power, open circuit voltage, short circuit current, battery maximum power point voltage, maximum power point current and fill factor respectively. The incident light power is 100mW / cm 2 Voc, Jsc, Vmpp, and Jmpp are obtained using a digital multimeter, where FF = (Vmpp × Jmpp) / (Voc × Jsc).

[0208] The hole transport layer parameters and photoelectric conversion efficiency test results of the perovskite cells of the above embodiments and comparative examples are shown in Tables 1 and 2. In Tables 1 and 2, "A ion type" represents the type of reducing cations in the direct contact layer and the indirect contact layer; "A / Ni molar ratio" represents the molar ratio of reducing cations to nickel in the direct contact layer and the indirect contact layer; "B ion type" represents the type of doped cations in the indirect contact layer; "B / Ni molar ratio" represents the molar ratio of doped cations to nickel in the indirect contact layer; "C ion type" represents the type of doped cations in the indirect contact layer; "C / Ni molar ratio" represents the molar ratio of doped cations to nickel in the indirect contact layer; "normalized efficiency after 30 days of storage" is the relative efficiency of the perovskite cell measured after 30 days of storage relative to the efficiency of the perovskite cell in the initial state, that is, the efficiency of the perovskite cell in the initial state is 100%. The condition for "30 days of storage" is: the unencapsulated perovskite cell is placed in a dry air environment with a humidity of ≤1% for 30 days under one sun.

[0209] Table 1

[0210] Table 2

[0211] As can be seen from Tables 1 and 2, the normalized photoelectric conversion efficiency of the perovskite cells of each embodiment of the present application after 30 days of storage is higher than that of the initial state of the cell, indicating that the perovskite cells have good stability and lifespan. At the same time, the perovskite cells have high photoelectric conversion efficiency.

[0212] The perovskite cells of Comparative Examples 1 and 2, in which no reducing cations were added to the hole transport layer, exhibited significantly lower normalized efficiencies after 30 days of storage than the perovskite cells of the present invention. Furthermore, the perovskite cell of Comparative Example 2, in which no doping cations were added to the hole transport layer, exhibited a further decrease in photoelectric conversion efficiency compared to Comparative Example 1.

[0213] The above description of the various embodiments tends to emphasize the differences between the various embodiments. The same or similar aspects can be referenced with each other and will not be repeated herein for the sake of brevity.

[0214] It should be noted that the present application is not limited to the above-mentioned embodiments. The above-mentioned embodiments are merely examples, and any embodiments having substantially the same structure and effect as the technical concept within the scope of the present application are all included in the technical scope of the present application. In addition, without departing from the scope of the present application, any other embodiments that can be conceived by those skilled in the art and that combine some of the constituent elements in the embodiments are also included in the scope of the present application.

Claims

1. A perovskite battery comprising: a first electrode layer; a hole transport layer, disposed on one side of the first electrode layer, the hole transport layer comprising nickel oxide and reducing cations; a perovskite layer, disposed on a side of the hole transport layer facing away from the first electrode layer; as well as The second electrode layer is disposed on a side of the perovskite layer away from the hole transport layer.

2. The perovskite cell according to claim 1, wherein The reducing cations include lanthanide metal ions.

3. The perovskite cell according to claim 2, wherein: The lanthanide metal ions include Eu 2+ 、Yb 2+ 、Sm 2+ 、Ce 3+ 、Tb 3+ or Pr 3+ One or more of .

4. The perovskite cell according to any one of claims 1 to 3, wherein The reducing cation concentration on the side of the hole transport layer facing away from the first electrode layer is greater than the reducing cation concentration on the side of the hole transport layer close to the first electrode layer.

5. The perovskite cell according to any one of claims 1 to 4, wherein The nickel oxide also includes doped cations.

6. The perovskite cell according to claim 5, wherein: The doping cations include Li + 、Cs + , Rb + 、Ag + Mg 2+ , Ca 2+ 、Zn 2+ 、Sr 2+ 、Ba 2+ 、Fe 2+ 、Fe 3+ 、Co 2+ 、Co 3+ 、Cu + 、Eu 3+ 、Yb 3+ 、Sm 2+ 、Ce 4+ 、Tb 4+ 、Pr 4+ 、Cu 2+ or Nd 3+ One or more of .

7. The perovskite battery according to any one of claims 1 to 6, wherein: The hole transport layer includes a direct contact layer facing the perovskite layer and an indirect contact layer away from the perovskite layer, the direct contact layer includes nickel oxide and the reducing cations, and the indirect contact layer includes nickel oxide.

8. The perovskite cell according to claim 7, wherein: Not less than 60% of the reducing cations are distributed in the direct contact layer.

9. The perovskite cell according to claim 7 or 8, wherein: The thickness of the direct contact layer is 0.1 nm to 20 nm.

10. The perovskite cell according to claim 9, wherein: The thickness of the direct contact layer is 0.1 nm to 10 nm.

11. The perovskite cell according to claim 10, wherein: The thickness of the direct contact layer is 2 nm to 10 nm.

12. The perovskite cell according to any one of claims 7 to 11, wherein The molar ratio of the reducing cation to the nickel element in the direct contact layer is in the range of 0.0001 to 0.2:

1.

13. The perovskite cell according to claim 12, wherein: The molar ratio of the reducing cation to the nickel element in the direct contact layer is in the range of 0.002 to 0.05:

1.

14. The perovskite cell according to any one of claims 7 to 13, wherein The hole transport layer further includes an indirect contact layer, which is located between the direct contact layer and the indirect contact layer, and the indirect contact layer includes nickel oxide and the reducing cations, or the indirect contact layer includes nickel oxide, the reducing cations and the doped cations.

15. The perovskite cell according to claim 14, wherein: The thickness of the indirect contact layer is 0.1 nm to 20 nm.

16. The perovskite cell according to claim 15, wherein: The thickness of the indirect contact layer is 0.1 nm to 10 nm.

17. The perovskite cell according to claim 16, wherein: The thickness of the indirect contact layer is 0.1 nm to 5 nm.

18. The perovskite cell according to any one of claims 14 to 17, wherein In the indirect contact layer, the molar ratio of the reducing cation to the nickel element is in the range of 0.0001 to 0.2:

1.

19. The perovskite cell according to claim 18, wherein: In the indirect contact layer, the molar ratio of the reducing cation to the nickel element is in the range of 0.002 to 0.05:

1.

20. The perovskite cell according to any one of claims 14 to 19, wherein When the indirect contact layer includes the doped cations, the molar ratio of the doped cations to the nickel element in the indirect contact layer is in the range of 0.0001 to 0.2:

1.

21. The perovskite cell according to claim 20, wherein: In the indirect contact layer, the molar ratio of the doping cation to the nickel element is in the range of 0.001 to 0.1:

1.

22. The perovskite cell according to any one of claims 14 to 21, wherein The density of the direct contact layer, the indirect contact layer, and the indirect contact layer is independently 1% to 100%.

23. A method for preparing a perovskite battery according to any one of claims 1 to 22, comprising the following steps: forming a first electrode layer, a hole transport layer, a perovskite layer, and a second electrode layer stacked in sequence; Wherein, the hole transport layer includes nickel oxide and reducing cations.

24. The method for preparing a perovskite battery according to claim 23, wherein: The preparation of the hole transport layer comprises the following steps: Multiple hole transport monolayers are sequentially prepared on the first electrode layer. The multiple hole transport monolayers are stacked on the first electrode layer, and at least the hole transport monolayer in direct contact with the perovskite layer includes the reducing cation.

25. The method for preparing a perovskite battery according to claim 24, wherein: In the hole transport single layer close to the perovskite layer, the molar ratio of the reducing cation to the nickel element is 0.0001 to 0.2:

1.

26. The method for preparing a perovskite battery according to claim 25, wherein: In the hole transport monolayer close to the perovskite layer, the molar ratio of the reducing cation to the nickel element is 0.002-0.05:

1.

27. The method for preparing a perovskite battery according to claim 24, wherein: Each hole transporting single layer independently contains or does not contain doping cations.

28. The method for preparing a perovskite battery according to claim 27, wherein: In the hole transport monolayer containing the doped cations, the molar ratio of the doped cations to the nickel element is 0.0001 to 0.2:

1.

29. The method for preparing a perovskite battery according to claim 28, wherein: In the hole transport monolayer containing the doped cations, the molar ratio of the doped cations to the nickel element is 0.001 to 0.1:

1.

30. The method for preparing a perovskite battery according to any one of claims 24 to 29, wherein: The number of the hole transport single layer is 2 to 50.

31. The method for preparing a perovskite battery according to any one of claims 24 to 30, wherein: The thickness of each hole transport single layer is 0.1 nm to 20 nm.

32. A photovoltaic module comprising the perovskite cell according to any one of claims 1 to 22 or the perovskite cell prepared by the preparation method according to any one of claims 23 to 31.

33. A photovoltaic system comprising the photovoltaic module according to claim 32.

34. An electrical device comprising the photovoltaic system according to claim 33.

35. A power generation device comprising the photovoltaic system according to claim 33.

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