Silicon rod internal force detection system and detection method, and cut-off method

Abstract

A silicon rod internal force detection system and detection method, and a cut-off method. The detection method comprises: controlling an internal force detection assembly (20) to move from one end of a silicon rod to be subjected to detection in the axial direction of said silicon rod to the other end, and collecting a grayscale value image generated by the internal force detection assembly (20); controlling a rotation assembly (30) to rotate said silicon rod by a preset angle, and performing internal force detection and image collection until a plurality of grayscale value images of said silicon rod at a full angle; and calculating a plurality of grayscale parameters of different areas in each grayscale value image, analyzing grayscale parameter calculation results of all the grayscale value images, and dividing said silicon rod into multiple types of areas related to an internal force.

Description

Silicon rod internal force detection system, detection method and truncation method

[0001] Related applications

[0002] This application claims priority to Chinese patent application No. 202410239827.1, filed on March 4, 2024, entitled “Silicon Rod Internal Force Detection System, Detection Method, and Truncation Method,” the entire contents of which are incorporated herein by reference. Technical Field

[0003] The present application relates to the field of semiconductor production technology, and in particular to a silicon rod internal force detection system, detection method, and truncation method. Background Art

[0004] During the current production of single-crystal silicon, thermal internal forces are generated within the silicon ingot due to the unique characteristics of the crystal pulling process. These forces can cause dislocations in the silicon ingot during the pulling process, and some of these forces remain even after the ingot cools. When the long ingot is subsequently cut into shorter pieces, if the ingot is cut into the region affected by the internal forces, the ingot is likely to break, and cracks can extend, leading to waste of silicon ingot resources.

[0005] Related technologies typically only detect hidden cracks within silicon ingots, but are unable to detect internal forces within the ingot. Hidden cracks are caused by internal forces and dislocations, leading to lags in this detection technology. Furthermore, in practice, every ingot emerging from the furnace may contain internal forces. Existing methods, which cut silicon ingots based on surface dislocations and hidden cracks, have a high probability of ingot breakage, resulting in significant waste of crystal pulling resources. Summary of the Invention

[0006] According to various embodiments of the present application, a silicon rod internal force detection system, detection method, and truncation method are provided.

[0007] The first embodiment of the present application proposes a silicon rod internal force detection system, which includes: a frame, an internal force detection component, a rotation component and a control module, wherein the control module establishes communication connections with the internal force detection component and the rotation component respectively, and the frame is used to support the internal force detection component, the rotation component and the silicon rod to be tested; the internal force detection component is used to emit infrared polarized light to the silicon rod to be tested, and collect a grayscale value image generated after the infrared polarized light penetrates the silicon rod to be tested, and the infrared polarized light is an infrared light with a preset polarization angle; the rotation component is used to drive the silicon rod to be tested to rotate in all directions, so as to perform full-angle internal force detection on the silicon rod to be tested; the control module is used to control the operation of the connected equipment, and analyze and process the grayscale value image, and determine the internal force distribution of the silicon rod to be tested according to the grayscale value change of the grayscale value image.

[0008] In some embodiments, the internal force detection component includes: an internal force light wave generator, which includes an infrared light source and a polarizing element; an internal force light wave receiver, which includes a polarizing element, an infrared optical lens and an infrared camera, and the internal force light wave receiver is used to receive infrared polarized light that penetrates the silicon rod to be tested and generate the grayscale value image.

[0009] In some embodiments, the rotating assembly includes: a rotating motor, a rotating reducer, a driving roller group, a driven roller group and a rotating base, wherein the rotating motor is connected to the rotating reducer, and the rotating reducer is also connected to the driving roller group; the rotating reducer is used to transmit the torque generated by the rotating motor to the driving roller group to drive the silicon rod to be tested to rotate.

[0010] In some embodiments, the silicon rod internal force detection system further includes: a detection motion component, which includes: a three-axis motion mechanism and a detection component mounting base; the detection motion component is used to drive the internal force detection component to move, and work in conjunction with the rotation component to achieve full-angle and full-size internal force detection of the silicon rod to be tested.

[0011] The second embodiment of the present application proposes a method for detecting the internal force of a silicon rod. The method for detecting the internal force of a silicon rod is applied to the silicon rod internal force detection system of the first aspect above, and the method comprises: controlling the internal force detection component to move from one end of the silicon rod to be tested along the axial direction of the silicon rod to the other end, emitting infrared polarized light to the silicon rod to be tested, and collecting the grayscale value image generated by the internal force detection component; controlling the rotation component to rotate the silicon rod to be tested by a preset angle, and repeating the internal force detection and image acquisition until a plurality of grayscale value images of the silicon rod to be tested at all angles are obtained; calculating a plurality of grayscale parameters of different areas in each of the grayscale value images, and dividing the silicon rod to be tested into different internal force difference areas based on the grayscale parameter calculation results of all the grayscale value images.

[0012] In some embodiments, the multiple grayscale parameters include grayscale average values ​​and grayscale deviation values, and the calculation of the multiple grayscale parameters of different areas in each grayscale value image includes: obtaining the grayscale values ​​of each pixel in any unit area in the grayscale value image, and determining the total number of pixels in the any unit area; calculating the grayscale average value of the any unit area based on the grayscale values ​​of each pixel and the total number of pixels; calculating the grayscale deviation value of the any unit area based on the grayscale average value, the grayscale values ​​of each pixel and the total number of pixels.

[0013] In some embodiments, the different internal force difference regions include: a normal region, an internal force region, a dislocation region, and a hidden crack region. Dividing the silicon rod to be tested into different internal force difference regions includes: determining the grayscale average value and the grayscale deviation value of each region in the silicon rod to be tested based on the grayscale parameter calculation results of all the grayscale value images; for each region, comparing the grayscale average value and the grayscale deviation value with the corresponding region division threshold value to determine the internal force defect type corresponding to each region.

[0014] In some embodiments, before the internal force detection component is controlled to move from one end of the silicon rod to be tested along the axial direction of the silicon rod to the other end, it also includes: detecting the dimensional parameters of the silicon rod to be tested, wherein the dimensional parameters include the diameter of the silicon rod to be tested; adjusting the position of the detection motion component according to the dimensional parameters to adjust the internal force detection component to the optimal working position for the silicon rod to be tested.

[0015] A third aspect of the present application provides a silicon rod truncation method, comprising the following steps: obtaining an internal force detection result of the silicon rod, wherein the internal force detection result is obtained using the silicon rod internal force detection method described in the second aspect, and the internal force detection result includes different internal force difference regions after the silicon rod is divided; determining a current demand preference for truncation of the silicon rod, and determining a truncation strategy for the silicon rod based on the demand preference and the different internal force difference regions after the silicon rod is divided.

[0016] In some embodiments, the demand preference includes a beat-saving preference and a material-saving preference, and the truncation strategy for the silicon rod is determined based on the demand preference and the multi-type regions after the silicon rod is divided, including: when the demand preference is the beat-saving preference, the boundary line between the normal area and the internal force area of ​​the silicon rod is used as the truncation position for truncation, and the normal area of ​​the silicon rod is retained; when the demand preference is the material-saving preference, the boundary line between the internal force area and the dislocation area of ​​the silicon rod is used as the first truncation position for truncation, and the normal area and the internal force area of ​​the silicon rod are retained, and the position of the fragmentation termination line is determined; based on the position of the fragmentation termination line, a second truncation position is selected in the internal force area for truncation, and the area of ​​the silicon rod that has not been fragmented is retained.

[0017] The technical solution provided by the embodiments of the present application brings at least the following beneficial effects: the present application emits infrared light to the silicon rod to be tested, collects grayscale value images based on the principle that the internal deformation caused by the internal force of the silicon rod changes the propagation path of light, and then determines the internal force distribution characteristics of the silicon rod by analyzing the changes in the grayscale values ​​in the image, and divides the silicon rod into multiple areas according to the defect type. Thus, the present application can accurately detect the distribution of residual internal forces inside the silicon rod, and improve the accuracy and comprehensiveness of the internal force detection of the silicon rod by performing full-angle and full-size internal force detection on the silicon rod. In addition, the present application can also cut off the silicon rod according to the internal force distribution, reduce the probability of fragmentation when cutting off the silicon rod, avoid waste of crystal pulling resources, and reduce the number of executions of the cutting work, which is conducive to saving resources and improving silicon rod production efficiency.

[0018] The details of one or more embodiments of the present application are set forth in the accompanying drawings and the description below. Other features, objects, and advantages of the present application will become apparent from the description, drawings, and claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to better describe and illustrate the embodiments and / or examples of the applications disclosed herein, reference may be made to one or more of the accompanying drawings. The additional details or examples used to describe the accompanying drawings should not be considered to limit the scope of the disclosed applications, the presently described embodiments and / or examples, and any of the best modes currently understood for these applications.

[0020] FIG1 is a schematic structural diagram of a silicon rod internal force detection system proposed in an embodiment of the present application.

[0021] FIG2 is a top view of a silicon rod internal force detection system proposed in an embodiment of the present application.

[0022] FIG3 is a schematic structural diagram of an internal force detection assembly proposed in an embodiment of the present application.

[0023] FIG4 is a schematic structural diagram of a rotating assembly proposed in an embodiment of the present application.

[0024] FIG5 is a schematic structural diagram of another rotating assembly proposed in an embodiment of the present application.

[0025] FIG6 is a schematic structural diagram of a motion detection component proposed in an embodiment of the present application.

[0026] FIG7 is a flow chart of a method for detecting internal force of a silicon rod proposed in an embodiment of the present application.

[0027] FIG8 is a flow chart of a silicon rod cutting method proposed in an embodiment of the present application.

[0028] FIG9 is a schematic diagram of a silicon rod cutting and marking method proposed in an embodiment of the present application.

[0029] FIG10 is a schematic diagram of another silicon rod cutting and marking method proposed in an embodiment of the present application.

[0030] FIG11 is a flow chart of a silicon rod processing method proposed in an embodiment of the present application. DETAILED DESCRIPTION

[0031] The following describes in detail embodiments of the present application, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present application, and should not be construed as limiting the present application.

[0032] The silicon rod internal force detection system, detection method, and truncation method according to embodiments of the present application are described below with reference to the accompanying drawings.

[0033] FIG1 is a schematic structural diagram of a silicon rod internal force detection system proposed in an embodiment of the present application. As shown in FIG1 , the system includes: a frame 10 , an internal force detection assembly 20 , a rotation assembly 30 and a control module 40 .

[0034] The control module 40 establishes communication connections with the internal force detection assembly 20 and the rotation assembly 30 respectively, and the frame 10 is used to support the internal force detection assembly 20, the rotation assembly 30 and the silicon rod to be tested.

[0035] The internal force detection component 20 is used to emit infrared polarized light to the silicon rod to be tested, and collect the grayscale value image generated after the infrared polarized light penetrates the silicon rod to be tested, wherein the infrared polarized light is an infrared light with a preset polarization angle, and the preset polarization angle can be determined according to the parameters of the internal force detection component 20 and the silicon rod to be tested, and this application does not impose any restrictions on this. The rotating component 30 is used to drive the silicon rod to be tested to rotate in all directions so as to perform full-angle internal force detection on the silicon rod to be tested. The control module 40 is used to control the operation of the connected equipment, and analyze and process the grayscale value image, and determine the internal force distribution of the silicon rod to be tested based on the grayscale value changes of the grayscale value image.

[0036] Specifically, as shown in Figures 1 and 2, the frame 10 is used to support various components mounted thereon, such as the rotation assembly 30, the internal force detection assembly 20, and the silicon rod currently undergoing internal force detection. The control module 40 can establish a communication connection with various devices within the detection system via wired or wireless means to exchange data with the connected devices. Thus, the control module 40 can be positioned based on the actual needs of the processing site, for example, in a backend control center to remotely control the operating status of connected devices.

[0037] The detection system of the present application uses an internal force detection assembly 20 to emit polarized infrared light toward the silicon rod under test, generating a grayscale image. A control module 40 then collects the grayscale image, performs correlation analysis, and determines the internal force defect detection result for the silicon rod under test. The internal force detection assembly 20, the silicon rod under test, and the control module 40 form an internal force imaging system.

[0038] In one embodiment of the present application, the internal force detection assembly 20 includes an internal force light wave generator 210, which includes an infrared light source 21 and a polarizing element 22; and an internal force light wave receiver 220, which includes an analyzer 23, an infrared optical lens 24, and an infrared camera 25. The internal force light wave receiver is configured to receive polarized infrared light that penetrates the silicon rod to be tested and generate a grayscale image. Thus, the internal force detection assembly 20 can detect the magnitude distribution of the internal force in the silicon rod.

[0039] Specifically, as shown in Figure 3, the internal force light wave generator 210 is composed of an infrared light source 21 and a polarizing element 22. The infrared light source 21 emits infrared light of a specific wavelength. The polarizing element 22 can be an optical element such as a polarizing film or a polarizing filter. The polarizing element 22 can convert conventional infrared light into polarized light with a specific polarization angle.

[0040] The internal force light wave receiver 220 consists of an analyzer 23, an infrared optical lens (referred to as an infrared lens) 24, and an infrared camera 25. Analyzer 23 can be an optical element such as a polarizing film or a polarizer. The internal force light wave receiver is used to receive polarized infrared light transmitted through an object to be measured 26 (in this application, a silicon rod to be measured) and collect polarization information such as the polarization angle and polarization intensity of the light.

[0041] Furthermore, the infrared camera 25 generates a corresponding grayscale image based on the currently acquired polarization information. This facilitates subsequent determination of the magnitude of internal forces based on grayscale differences in the image and allows for the division of the silicon rod into regions based on these grayscale differences. The infrared camera 25 can be a line scan camera or an area array camera. In this imaging system, the control module 40 is used to control the light source intensity and the camera's image acquisition.

[0042] During the internal force detection process in this embodiment, infrared polarized light emitted by the internal force light wave generator 210 is directed into the silicon rod to be tested. After penetrating the rod, it is emitted from the surface and received by the internal force light wave receiver 220. Due to residual forces within the ingot, microscopic internal deformation occurs, altering the light propagation path. Consequently, the receiver can collect images with varying grayscale values, and the grayscale variations characterize the internal force distribution characteristics of the silicon rod. This is achieved by the fact that the analyzer 23 allows polarized light with the same direction as itself to pass through, while completely blocking polarized light perpendicular to it. Therefore, when the polarized light's vibration direction aligns with the angle of the polarizer, the intensity of the polarized light passing through is maximized. Furthermore, because the polarized light generated by the polarizer 22 changes the polarization angle of the silicon rod to be tested due to internal defects in the rod, the analyzer 23 can only capture a portion of the polarized light. Consequently, a corresponding grayscale image can be generated based on the collected polarization information. The polarizing element 22 and the analyzing element 23 may be in the form of a combination of linear polarization, circular polarization, elliptical polarization, a quarter wave plate, a half wave plate and other elements.

[0043] In one embodiment of the present application, as shown in Figures 4 and 5 , a rotating assembly 30 includes a rotating motor 31, a rotating reducer 32, a driving roller assembly 33, a driven roller assembly 34, and a rotating base 35. The rotating motor 31 is connected to the rotating reducer 32, which is in turn connected to the driving roller assembly 33. The rotating reducer 32 is used to transmit the torque generated by the rotating motor 31 to the driving roller assembly 33, thereby driving the silicon rod to be tested to rotate.

[0044] Specifically, in this embodiment, the rotation assembly 30 is used to rotate the silicon rod under test 360 degrees, assisting the internal force detection assembly 20 in achieving full-angle detection of the silicon rod's circumference. A rotary motor 31 is connected to a rotary reducer 32 via a coupling. The rotary reducer 32 transmits torque to a driving roller assembly 33. The movement of the driving roller assembly 33 drives the silicon rod, thereby driving the rotation of the driven roller assembly 34. All of these components are mounted on a rotating base 35.

[0045] To perform full-scale testing of the entire silicon rod under test, it is necessary to control the movement of the internal force detection assembly 20. Therefore, in one embodiment of the present application, as shown in Figure 1, the system also includes a detection motion assembly 50. This detection motion assembly 50 includes a three-axis motion mechanism 500 and a detection assembly mounting base 510. The detection motion assembly 50 is used to drive the movement of the internal force detection assembly 20 and cooperate with the rotation assembly 30 to achieve full-angle and full-scale internal force testing of the silicon rod under test.

[0046] The detection motion assembly 50 of this embodiment is disposed on the frame 10 and is used to carry the internal force imaging system and move in the X, Y, and Z axes. It cooperates with the rotation assembly 30 to perform full-angle and full-size internal force detection on the silicon rod. As a specific implementation, as shown in Figure 6, the detection motion assembly 50 mainly includes a first X-axis linear motion unit 51, a second X-axis linear motion unit 52, a first Y-axis linear motion unit 53, a second Y-axis linear motion unit 54, a first Z-axis linear motion unit 55, a second Z-axis linear motion unit 56, a first detection device mounting base 57, and a second detection device mounting base 58.

[0047] Each linear motion unit on the X, Y, and Z axes includes components such as a motor, ball screw, linear guide, and slider, and is connected to the control module 40. The first detection mount 57 is used to carry equipment such as the internal force light wave generator 210 and the diameter detection sensor 59, while the second detection mount is equipped with the internal force light wave receiver 220. The diameter detection sensor 59 can be in the form of a distance sensor or a 3D laser profiler.

[0048] In one embodiment of the present application, the control module 40 can control the operating status and operating parameters of various devices such as the internal force detection component 20, the rotation component 30, the detection motion component 50, and the diameter detection sensor 59 that are communicatively connected to the control module 40, and perform calculations and analysis on the interactive data to obtain the internal force detection results of the silicon rod.

[0049] For example, the control module 40 may include various units, such as a motion detection control module, a rotation control module, an internal force detection control module, and a diameter detection control module. These units are responsible for controlling the motion of the bilateral three-axis detection module, collecting the rotational motion of the silicon ingot under test, collecting internal force distribution data, and collecting diameter data. Furthermore, the modules process and analyze the collected data, and determine and locate internal force defects in the silicon ingot based on the calculated results. The control module 40 is not limited to an industrial computer or a programmable control module.

[0050] In summary, the silicon rod internal force detection system implemented in this application emits polarized infrared light toward the silicon rod to be tested. Based on the principle that the internal deformation caused by the internal force of the silicon rod changes the propagation path of light, a grayscale image is captured. The internal force distribution characteristics of the silicon rod are determined by analyzing the changes in grayscale values ​​in the image, and the silicon rod is divided into multiple regions according to defect type. As a result, the system can accurately detect the distribution of residual internal forces within the silicon rod. By performing internal force detection on the silicon rod at all angles and sizes, the accuracy and comprehensiveness of silicon rod internal force detection are improved.

[0051] To more clearly illustrate the specific implementation process and detection principle of silicon rod internal force detection using a silicon rod internal force detection system, a silicon rod internal force detection method proposed in an embodiment of the present application is described in detail below. This method is applied to the silicon rod internal force detection system in the above embodiment. The components included in the system and the connection method of each component are as described in the above embodiment and will not be repeated here.

[0052] As a possible implementation manner, the execution body of the silicon rod internal force detection method of the embodiment of the present application may be the control module 40 in the above embodiment. Relevant program algorithms may be configured in the control module 40 to implement the silicon rod internal force detection method of the embodiment of the present application.

[0053] Figure 7 is a flow chart of a silicon rod internal force detection method proposed in an embodiment of the present application. As shown in Figure 7, the method includes the following steps: Step S101: Controlling the internal force detection component 20 to move from one end of the silicon rod to be tested along the axial direction of the silicon rod to the other end, emit infrared polarized light to the silicon rod to be tested, and collect the grayscale value image generated by the internal force detection component 20.

[0054] Specifically, after the silicon rod to be tested is loaded into the silicon rod internal force detection system, the internal force detection assembly 20 can be moved to one end of the silicon rod to be tested, i.e., the initial end for testing, via the detection motion assembly 50. After the internal force detection assembly 20 is in operation, infrared polarized light is emitted toward the silicon rod to be tested for internal force detection. This infrared polarized light is the infrared light with a specific wavelength and specific polarization angle described in the first embodiment. Furthermore, the internal force detection assembly 20 can be controlled by the detection motion assembly 50 to move from the initial end along the axial direction of the silicon rod to be tested to the tail end, completing a round of testing.

[0055] Among them, the internal force detection component 20 includes an internal force light wave generator 210 and an internal force light wave receiver 220, which can generate a corresponding grayscale value image in one round of detection. The change of grayscale value in the grayscale value image represents the internal force distribution characteristics of the silicon rod, thereby detecting the internal force size distribution of the silicon rod.

[0056] Step S102: controlling the rotating assembly 30 to rotate the silicon rod to be tested by a preset angle, and repeating the internal force detection and image acquisition until a plurality of grayscale value images of the silicon rod to be tested at all angles are obtained.

[0057] It should be noted that because the infrared light emitted by the internal force light wave generator 210 of the internal force detection assembly 20 has a certain angular range, it may not be possible to fully detect the internal forces in different areas of the silicon rod in scenarios such as when the diameter of the silicon rod to be tested is large. Therefore, in order to achieve full-size and full-angle detection of the silicon rod, the embodiment of the present application also rotates the silicon rod to be tested through the rotation assembly 30. Each round of detection rotates the silicon rod by a certain angle to perform detection at a specific angle.

[0058] Specifically, the preset rotation angle is determined based on the hardware performance of the detection system and the number of permitted detection times. For example, if the preset angle is 90 degrees, then, according to the implementation of step S101 above, the internal force detection assembly 20 is repeatedly controlled to perform internal force detection and generate grayscale images a total of four times to achieve 360-degree full-angle detection of the silicon rod to be tested.

[0059] Step S103: Calculating multiple grayscale parameters of different regions in each grayscale value image, and dividing the silicon rod to be tested into different internal force difference regions based on the grayscale parameter calculation results of all grayscale value images.

[0060] Specifically, after the internal force detection component 20 captures a grayscale image, the internal force distribution of corresponding regions within the silicon rod can be determined based on the grayscale value changes reflected in the grayscale image. Regional division can also be performed based on grayscale value differences. As an example, regions with relatively low grayscale values ​​represent normal regions of the silicon rod with no internal force, regions with relatively high grayscale values ​​represent internal force regions, and regions with high grayscale values ​​containing straight lines of light and dark in a specific direction represent dislocation regions. Dislocation regions have a certain probability of containing hidden cracks, which appear as irregularly shaped shadows with very low grayscale values ​​in the image. These regions are considered hidden crack regions.

[0061] Among them, a variety of grayscale parameters can be calculated according to the grayscale values ​​of the pixels in each area of ​​the grayscale image. The grayscale value changes of each interval are reflected by the grayscale parameters, so as to judge the size of the internal force value and divide the area.

[0062] In one embodiment of the present application, the aforementioned multiple grayscale parameters may include a grayscale average and a grayscale deviation. The magnitude of the internal force of the silicon rod in the internal force region is determined based on the grayscale average and grayscale deviation. Regions with high grayscale parameters have high internal forces, while regions with low grayscale parameters have low internal forces. Calculating multiple grayscale parameters for different regions in each grayscale value image includes the following steps: obtaining the grayscale values ​​of each pixel in any unit region of the grayscale value image and determining the total number of pixels in any unit region; calculating the grayscale average of any unit region based on the grayscale values ​​of each pixel and the total number of pixels; and calculating the grayscale deviation of any unit region based on the grayscale average, the grayscale values ​​of each pixel, and the total number of pixels.

[0063] Specifically, in this embodiment, a grayscale image can be divided into multiple unit areas in a certain way. For a unit area j, the grayscale average value can be calculated using the following formula:

[0064] Where Mj is the grayscale average of the j-th unit area, n is the total number of pixels in the area, g(i) is the grayscale value of the i-th pixel, and i is any pixel in the area.

[0065] Then, the grayscale deviation value can be calculated by the following formula:

[0066] Wherein, Dj is the grayscale deviation value of the j-th unit area.

[0067] Therefore, the grayscale average value and grayscale deviation value of each unit area in the grayscale image can be calculated respectively in the above manner.

[0068] Furthermore, the silicon rod under test can be divided into different internal force difference regions based on the grayscale average and grayscale deviation values ​​of corresponding regions in the grayscale image. Specifically, the silicon rod can be divided into multiple types of internal force defect regions based on the distribution of internal force magnitudes. Specifically, the division can be based on the grayscale average and grayscale deviation values ​​of each region within the silicon rod, as well as known defect characteristics.

[0069] In one embodiment of the present application, different internal force difference regions include: a normal region, an internal force region, a dislocation region, and a hidden crack region. Dividing the silicon rod to be tested into different internal force difference regions includes: determining the grayscale average value and grayscale deviation value of each region in the silicon rod to be tested based on the grayscale parameter calculation results of all grayscale value images; for each region, comparing the grayscale average value and grayscale deviation value with the corresponding region division threshold value to determine the internal force defect type corresponding to each region.

[0070] For example, based on the existing knowledge of defect body characteristics, the interval of the grayscale parameter corresponding to each internal force difference area is determined in advance. Each interval consists of two thresholds: maximum and minimum. Each internal force difference area has a corresponding interval for each grayscale parameter, thereby generating a region division table as shown in Table 1 below:

[0071] Table 1 Regional division table

[0072] After calculating the grayscale average value and grayscale deviation value of each region in the silicon rod, the region type to which the region belongs can be determined by referring to Table 1 above, thereby achieving division of the silicon rod into multiple regions after determining the type of each region.

[0073] It should be noted that in actual applications, the thresholds for dividing each internal force difference area may change due to various factors, or the thresholds for dividing the area may be adjusted according to the actual on-site conditions. The above Table 1 only gives a possible example to illustrate the principle of dividing the internal force difference area. This application does not limit the threshold for area division.

[0074] Furthermore, since multiple grayscale value images are obtained through multiple tests in the previous step, the present application can summarize and analyze the grayscale parameter calculation results of all grayscale value images to achieve more comprehensive and accurate division of the silicon rod area to be tested.

[0075] As a first example, after obtaining the interval division results for each grayscale image, the internal force region division results are verified against each other, and the final test result is obtained after successful verification. For example, for a certain segment of a silicon rod, the region division results for that segment are determined in four grayscale images. Only when the segment is shown as normal in all four images can the internal force test result for that segment be determined to be defect-free.

[0076] As a second example, if a single grayscale image cannot accurately and comprehensively calculate the internal force magnitude for a particular region, the calculation results of four grayscale images are combined. By calculating the average grayscale value of each pixel in the four grayscale images, the grayscale value of each pixel in the region can be accurately and comprehensively determined to calculate the internal force magnitude. This allows the entire internal region of the silicon rod to be covered.

[0077] It is understandable that in actual applications, the diameters and other dimensions of each silicon rod may be different. In order to more accurately detect the current silicon rod to be tested, in one embodiment of the present application, before controlling the internal force detection component 20 to move from one end of the silicon rod to be tested along the axial direction of the silicon rod to the other end, that is, before performing internal force detection, it also includes: detecting the dimensional parameters of the silicon rod to be tested, wherein the dimensional parameters include the diameter of the silicon rod to be tested; adjusting the position of the detection motion component 50 according to the dimensional parameters to adjust the internal force detection component 20 to the optimal working position for the silicon rod to be tested.

[0078] Specifically, in this embodiment, the size information of the silicon rod to be tested can be collected by the diameter detection sensor 59 and other equipment in the detection system. Then, based on the collected size information, the detection motion component 50 adjusts the initial position of the internal force detection component 20, including parameters such as the height of the internal force detection component 20 and the distance from the silicon rod, so as to adjust the internal force detection component 20 to the optimal working position for the current silicon rod, so that internal force detection can be performed at a more appropriate angle and a larger detection range.

[0079] In summary, the silicon rod internal force detection method implemented in this application emits infrared light toward the silicon rod to be tested. Based on the principle that the internal deformation caused by the internal force of the silicon rod changes the propagation path of light, a grayscale image is captured. The internal force distribution characteristics of the silicon rod are determined by analyzing the changes in grayscale values ​​in the image, and the silicon rod is divided into multiple regions according to defect type. As a result, this method can accurately detect the distribution of residual internal forces within the silicon rod. By performing internal force detection on the silicon rod at all angles and sizes, the accuracy and comprehensiveness of silicon rod internal force detection are improved.

[0080] Based on the above embodiment, the silicon rod can be cut according to the internal force detection results of the silicon rod. The present application cuts the silicon rod based on the divided internal force areas, which can save material resources and production resources. To more clearly illustrate the specific implementation method of silicon rod cutting in the present application, a silicon rod cutting method proposed in an embodiment of the present application is exemplified below.

[0081] FIG8 is a flow chart of a silicon rod cutting method proposed in an embodiment of the present application. As shown in FIG8 , the method includes the following steps: Step S201 , obtaining an internal force detection result of the silicon rod, the internal force detection result including multiple types of regions after the silicon rod is divided.

[0082] The internal force detection result of the silicon rod in this embodiment can be obtained by detecting the silicon rod using the silicon rod internal force detection method in the above embodiment. The specific detection process can be referred to the relevant description in the above embodiment and will not be repeated here.

[0083] Specifically, the internal force detection results of the silicon rod are obtained by dividing the silicon rod into multiple types of regions, namely, the normal region, internal force region, dislocation region and hidden crack region of the silicon rod. The boundary line of each region can also be determined from the detection results.

[0084] For example, as shown in Figures 9 and 10 , according to the silicon rod internal force detection method described in the above embodiment, each detection result can be divided into a normal zone 1, an internal force zone 2, and a dislocation zone 3. Figures 9 and 10 provide a visual representation of the detected internal defects of the silicon rod.

[0085] Step S202 : determining the current demand preference for truncating silicon rods, and determining a truncation strategy for the silicon rods based on the demand preference and the multi-type regions after the silicon rods are divided.

[0086] In one embodiment of the present application, the demand preference includes a beat-saving preference and a material-saving preference. Based on the demand preference and the multi-type regions after the silicon rod is divided, a truncation strategy for the silicon rod is determined, including the following steps: First, when the demand preference is a beat-saving preference, the boundary line between the normal zone 1 and the internal force zone 2 of the silicon rod is used as the truncation position for truncation, and the normal zone 1 of the silicon rod is retained. Secondly, when the demand preference is the material-saving preference, the boundary line between the internal force zone 2 and the dislocation zone 3 of the silicon rod is used as the first truncation position for truncation, and the normal zone 1 and the internal force zone 2 of the silicon rod are retained, and the position of the fragmentation termination line is determined; then, based on the position of the fragmentation termination line, a second truncation position is selected in the internal force zone 2 for truncation, and the area where the silicon rod is not fragmented is retained.

[0087] The following is a detailed description of the truncation strategies determined by the above two demand preferences.

[0088] As the first possible implementation method, the takt-saving preference is to save production time, with reducing the number of truncation operations as the most important consideration. In this case, the truncation line position is the dividing line between the normal area 1 and the internal force area 2, that is, the truncation position 4 of the truncation preference as shown in Figures 9 and 10. After truncation from this position, the normal area 1 is intact, while the remaining internal force area 2, dislocation area 3 and hidden crack area may be broken. Therefore, the silicon material in the internal force area 2 and beyond is discarded and recycled, and only the silicon rod material in the normal area 1 is retained. This truncation strategy can ensure that the cutting is completed in one go without repeated truncation, which can greatly reduce the number of reverse cuts and save production time.

[0089] As a second possible implementation method, material conservation is the most important consideration, which is to save silicon ingot material. In this case, multiple cuts are required. The first cut is located at the boundary between the internal force zone 2 and the dislocation zone 3, which is the material conservation preferred cut position 5 shown in Figures 9 and 10. After cutting from this position, the front and rear sections of the cross section are more likely to break. The end point of the break can be determined based on the actual situation of the current break.

[0090] Then, the fragments in the dislocation zone 3 and the hidden crack zone are discarded and recycled, leaving the intact normal zone 1 and the partially broken internal force zone 2. The silicon rod materials in the normal zone 1 and the internal force zone 2 are then cut a second time, and the second cut position can be determined according to the position of the fragmentation termination line. For example, the fragmentation termination line position can be directly used as the second cut position for a second cut, which can retain the material to the greatest extent. For another example, the second cut position can preferentially select the area with lower internal force before the fragmentation termination line position. This cut method can ensure that there will be no fragmentation, and can effectively guarantee the quality of the silicon rod after cut and during use. Therefore, after the second cut, this cut strategy leaves the materials in the normal zone 1 and the remaining internal force zone 2 intact, and only one more cut is required to greatly save silicon material.

[0091] To sum up, the silicon rod cutting method of the embodiment of the present application can cut the silicon rod according to the internal force distribution, reduce the probability of breakage when cutting the silicon rod, avoid waste of crystal pulling resources, and reduce the number of times the cutting work is performed, which is conducive to saving resources and improving silicon rod production efficiency.

[0092] Based on the above embodiment, in order to more clearly illustrate the implementation process of the silicon rod internal force detection and truncation processing in actual application of the present application, the following is an exemplary description of a specific application method proposed in an embodiment of the present application. Figure 11 is a flow chart of a silicon rod processing method proposed in an embodiment of the present application. As shown in Figure 11, the method includes the following steps: Step S1, the loading and unloading mechanism transports the silicon rod to the detection station. Among them, the detection station is a position in the rotating assembly 30 to complete the feeding.

[0093] In step S2 , the first X-axis linear motion unit 51 and the second X-axis linear motion unit 52 are synchronously moved along the X direction to one end of the silicon rod, and the diameter detection sensor 59 detects the diameter of the silicon rod.

[0094] In step S3, the first Y-axis linear motion unit 53, the second Y-axis linear motion unit 54, the first Z-axis linear motion unit 55 and the second Z-axis linear motion unit 56 are dynamically moved and position-adjusted according to the size of the silicon rod so that the internal force detection imaging system reaches the optimal working position.

[0095] In step S4, the internal force detection assembly 20 starts working, the first X-axis linear motion unit 51 and the second X-axis linear motion unit 52 move synchronously along the X direction from the head of the silicon rod to the tail of the silicon rod, and the control module 40 collects an internal force distribution image, completing an internal force image collection.

[0096] Specifically, the i-th collection is performed, 1≤i≤4.

[0097] In step S5, the rotating assembly 30 rotates the silicon rod 90 degrees, and step S4 is repeated until the silicon rod rotates 360 degrees, and the image is collected 4 times.

[0098] Specifically, after each round of detection is completed, the first X-axis linear motion unit 51 and the second X-axis linear motion unit 52 synchronously return from the tail of the silicon rod to the head along the X direction, and then perform the next round of detection until the number of detections reaches 4 times.

[0099] Step S6: After completing the data collection of the silicon rod to be tested, the rotating assembly 30 stops moving, and the collected data is uploaded to the control module 40, and data processing and analysis are performed to determine and mark the positions of the normal area 1, internal force area 2, dislocation area 3 and hidden crack area of ​​the silicon rod.

[0100] Step S7: adjusting the truncation strategy according to demand preference, and truncate the silicon rods according to the truncation strategy.

[0101] In step S8, the loading and unloading mechanism moves the cut silicon rods out of the inspection station, completing unloading.

[0102] It should be noted that the specific implementation of each step in this method can refer to the relevant description in the above embodiment. The implementation method is the same and will not be repeated here.

[0103] In order to implement the above embodiments, the present application also proposes a non-transitory computer-readable storage medium storing a computer program. When the computer program is executed by a processor, the silicon rod internal force detection method or silicon rod truncation method proposed in the above embodiments of the present application is implemented.

[0104] It should be noted that it should be understood that various parts of the present application can be implemented using hardware, software, firmware, or a combination thereof. In the above embodiments, multiple steps or methods can be implemented using software or firmware stored in a memory and executed by a suitable instruction execution system. For example, if implemented using hardware, as in another embodiment, any one of the following technologies known in the art or a combination thereof can be used to implement: a discrete logic circuit having a logic gate circuit for implementing a logic function on a data signal, an application-specific integrated circuit having a suitable combination of logic gate circuits, a programmable gate array (PGA), a field programmable gate array (FPGA), etc.

[0105] In addition, in the description of this application, the terms "center", "up", "down", "left", "right", "vertical", "horizontal", "inside", "outside", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, they should not be understood as limitations on this application.

[0106] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referred to. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of such features. Throughout the description of this application, "plurality" means at least two, for example, two, three, etc., unless otherwise specifically defined.

[0107] In this application, unless otherwise specified or limited, the terms "installed," "connected," "connect," "fixed," etc. should be understood in a broad sense. For example, they can refer to fixed connection, detachable connection, or integration; mechanical connection or electrical connection; direct connection or indirect connection through an intermediate medium; internal communication between two elements or interaction between two elements, unless otherwise specified. Those skilled in the art will understand the specific meanings of the above terms in this application based on specific circumstances.

[0108] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in this specification and features of different embodiments or examples without contradiction.

[0109] Although the embodiments of the present application have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be understood as limitations on the present application. Ordinary technicians in this field can change, modify, replace and modify the above embodiments within the scope of the present application.

[0110] The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features in the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0111] The above-described embodiments merely represent several implementation methods of the present application. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that a person of ordinary skill in the art may make various modifications and improvements without departing from the spirit of the present application, and these modifications and improvements fall within the scope of protection of the present application. Therefore, the scope of protection of the present patent application shall be determined by the appended claims.

Claims

1. A silicon rod internal force detection system, characterized in that: include: Frame, internal force detection assembly, rotation assembly and control module, wherein, The control module establishes communication connections with the internal force detection assembly and the rotating assembly respectively, and the frame is used to support the internal force detection assembly, the rotating assembly and the silicon rod to be tested; The internal force detection component is used to emit infrared polarized light toward the silicon rod to be tested, and collect a grayscale image generated after the infrared polarized light penetrates the silicon rod to be tested, wherein the infrared polarized light is an infrared light with a preset polarization angle; The rotating assembly is used to drive the silicon rod to be tested to rotate in all directions to perform full-angle internal force detection on the silicon rod to be tested; the control module is used to control the operation of the connected equipment and analyze and process the grayscale image to determine the internal force distribution of the silicon rod to be tested based on the grayscale value changes of the grayscale image.

2. The silicon rod internal force detection system according to claim 1, wherein: The internal force detection component includes: an internal force light wave generator, which includes an infrared light source and a polarizing element; An internal force light wave receiver, comprising a polarization analyzer, an infrared optical lens and an infrared camera, is used to receive infrared polarized light that penetrates the silicon rod to be tested and generate the grayscale value image.

3. The silicon rod internal force detection system according to claim 1, wherein: The rotating assembly includes: a rotating motor, a rotating reducer, a driving roller group, a driven roller group and a rotating base, wherein the rotating motor is connected to the rotating reducer, and the rotating reducer is also connected to the driving roller group; the rotating reducer is used to transmit the torque generated by the rotating motor to the driving roller group to drive the silicon rod to be tested to rotate.

4. The silicon rod internal force detection system according to claim 1, wherein: It also includes: a detection motion component, the detection motion component including: a three-axis motion mechanism and a detection component mounting seat; The detection motion component is used to drive the internal force detection component to move, and cooperates with the rotation component to realize full-angle and full-size internal force detection of the silicon rod to be tested.

5. A method for detecting internal force of a silicon rod, characterized in that: Applied to the silicon rod internal force detection system according to any one of claims 1 to 4, the method comprises the following steps: Controlling the internal force detection component to move from one end of the silicon rod to be tested along the axial direction of the silicon rod to the other end, emitting infrared polarized light toward the silicon rod to be tested, and collecting a grayscale value image generated by the internal force detection component; Controlling the rotating assembly to rotate the silicon rod to be tested by a preset angle, and repeating the internal force detection and image acquisition until a plurality of grayscale value images of the silicon rod to be tested at all angles are obtained; A plurality of grayscale parameters of different regions in each of the grayscale value images are calculated, and based on the grayscale parameter calculation results of all the grayscale value images, the silicon rod to be tested is divided into different internal force difference regions.

6. The method for detecting internal force of a silicon rod according to claim 5, wherein: The multiple grayscale parameters include grayscale average values ​​and grayscale deviation values, and the calculation of the multiple grayscale parameters of different areas in each of the grayscale value images includes: Obtaining the grayscale value of each pixel in any unit area of ​​the grayscale image, and determining the total number of pixels in the any unit area; Calculating the grayscale average value of any unit area according to the grayscale value of each pixel and the total number of pixels; The grayscale deviation value of any unit area is calculated based on the grayscale average value, the grayscale value of each pixel point and the total number of pixels.

7. The method for detecting internal force of a silicon rod according to claim 6, wherein: The different internal force difference regions include: a normal region, an internal force region, a dislocation region, and a hidden crack region. Dividing the silicon rod to be tested into the different internal force difference regions includes: determining the grayscale average value and the grayscale deviation value of each region in the silicon rod to be tested based on grayscale parameter calculation results of all the grayscale value images; For each region, the grayscale average value and the grayscale deviation value are compared with the corresponding region division threshold value to determine the internal force defect type corresponding to each region.

8. The method for detecting internal force of a silicon rod according to claim 5, wherein: Before the internal force detection component is controlled to move from one end of the silicon rod to be tested to the other end along the axial direction of the silicon rod, the method further includes: Detecting dimensional parameters of the silicon rod to be measured, wherein the dimensional parameters include the diameter of the silicon rod to be measured; The position of the detection motion component is adjusted according to the size parameters to adjust the internal force detection component to an optimal working position for the silicon rod to be tested.

9. A silicon rod cutting method, characterized in that: The following steps are involved: Obtaining an internal force detection result of the silicon rod, wherein the internal force detection result is obtained by detection using the method according to any one of claims 5 to 8, and the internal force detection result includes different internal force difference regions after the silicon rod is divided; A current demand preference for truncation of the silicon rod is determined, and a truncation strategy for the silicon rod is determined based on the demand preference and different internal force difference regions after the silicon rod is divided.

10. The silicon rod cutting method according to claim 9, wherein: The demand preference includes a cycle-saving preference and a material-saving preference. Determining a truncation strategy for the silicon rods based on the demand preference and the multi-type regions after the silicon rods are divided includes: When the demand preference is the beat saving preference, the silicon rod is cut off at the boundary between the normal zone and the internal force zone as the cutoff position, and the normal zone of the silicon rod is retained. When the demand preference is the material saving preference, the silicon rod is cut off at the boundary between the internal force zone and the dislocation zone as the first cutoff position, and the normal zone and the internal force zone of the silicon rod are retained, and the position of the fragmentation termination line is determined. Based on the position of the fragmentation termination line, a second truncation position is selected in the internal force region for truncation, and an area of ​​the silicon rod that has not been fragmented is retained.

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