Piezoelectric element and MEMS device using said piezoelectric element

WO2025187655A8 Publication Date: 2025-10-02NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE & TECHNOLOGY
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Patent Information

Application Number
PCT/JP2025/007570
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-03-04
Filing Date
2025-03-03
Publication Date
2025-10-02

AI Technical Summary

Technical Problem

Conventional piezoelectric elements used in FBAR filters require a buffer layer to improve crystallinity, which increases thickness and complicates the manufacturing process, hindering miniaturization and increasing production costs.

Method used

A piezoelectric element is designed without a buffer layer by using electrodes made of a conductive nitride material with a wurtzite crystal structure, improving the crystallinity of the piezoelectric layer and maintaining sufficient piezoelectric properties, allowing for miniaturization.

Benefits of technology

The solution results in a piezoelectric element that is smaller, more stable, and less complex to produce, with improved piezoelectric properties and electromechanical coupling, suitable for use in MEMS devices.

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Abstract

[Problem] The purpose of the present invention is to provide: a piezoelectric element which does not have a buffer layer, has sufficient piezoelectric characteristics and stability, and can be further reduced in size as compared with conventional piezoelectric elements; and a MEMS device which uses the piezoelectric element. [Solution] The present invention comprises: a piezoelectric layer 10 that is formed of a nitride material which has a wurtzite crystal structure; a first electrode 20 that is provided on one surface of the piezoelectric layer; and a second electrode 30 that is provided on the other surface of the piezoelectric layer. The first electrode is formed of a first nitride material that has a wurtzite crystal structure and an electrical resistivity of 1.0 × 10-3 Ω∙cm or less. The second electrode is formed of a second nitride material that has a wurtzite crystal structure and an electrical resistivity of 1.0 × 10-3 Ω∙cm or less.
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