Thermosetting resin film for semiconductors, integrated dicing / die bonding film and method for manufacturing semiconductor device

Abstract

Disclosed is a thermosetting resin film containing a photobase generator that generates a base by light irradiation. The thermosetting resin film may be used for bonding a semiconductor chip to a substrate while another semiconductor chip is embedded. The thermosetting resin film may be used for bonding a semiconductor chip to another semiconductor chip while embedding a part or the entirety of a wire connected to the another semiconductor chip.

Description

Thermosetting resin film, dicing / die bonding integrated film, and method for manufacturing semiconductor device

[0001] The present disclosure relates to a thermosetting resin film, a dicing and die bonding integrated film, and a method for manufacturing a semiconductor device.

[0002] Stacked MCPs (Multi Chip Packages), which have high capacity due to semiconductor chips stacked in multiple layers, are becoming popular. Examples of stacked MCPs include wire-embedded and chip-embedded semiconductor packages. A semiconductor package structure in which wires are embedded in a thermosetting resin film is sometimes referred to as FOW (Film Over Wire). A semiconductor package structure in which semiconductor chips are embedded in a thermosetting resin film is sometimes referred to as FOD (Film Over Die). One known example of a semiconductor package employing FOD is one that has a controller chip located in the bottom layer and a thermosetting resin film in which the controller chip is embedded (see Patent Document 1).

[0003] Japanese Patent Application Laid-Open No. 2014-175459

[0004] In the manufacture of semiconductor packages having an FOD or FOW structure, it is necessary to sufficiently embed the semiconductor chip or wire in the thermosetting resin film. Although a thermosetting resin film with low viscosity and high fluidity can exhibit good embedding properties, a phenomenon called bleeding, in which the thermosetting resin film protrudes from the edge of the semiconductor chip, may occur.

[0005] Therefore, a main object of the present disclosure is to provide a thermosetting resin film that can suppress bleeding.

[0006] A film known as a dicing / die-bonding integrated film is used in the semiconductor chip manufacturing process. This film has a structure in which a base layer, a pressure-sensitive adhesive layer, and an adhesive layer (thermosetting resin film) are laminated in this order. For example, it is used as follows: First, the adhesive layer side of the film is attached to a semiconductor wafer, and the semiconductor wafer is diced while being fixed with a dicing ring. This separates the semiconductor wafer into multiple semiconductor chips. Next, the adhesive layer containing a UV-curable adhesive is irradiated with UV light to reduce the adhesive strength of the adhesive layer to the adhesive layer. The semiconductor chips are then picked up from the adhesive layer along with the adhesive layer pieces (thermosetting resin film pieces) resulting from the adhesive layer being separated. The semiconductor chips are then mounted on a substrate or the like via the adhesive layer pieces to manufacture a semiconductor device. The laminate consisting of the semiconductor chips obtained through the dicing process and the adhesive layer pieces attached thereto is called a semiconductor chip with adhesive layer pieces attached.

[0007] In order to control the fluidity of a thermosetting resin film, the present inventors have investigated the effective use of ultraviolet light irradiated onto a pressure-sensitive adhesive layer, taking into account the semiconductor chip manufacturing process described above. As a result, they have found that by incorporating a photobase generator that generates a base upon light irradiation into the adhesive layer (thermosetting resin film), a base is generated in the adhesive layer (thermosetting resin film) upon ultraviolet irradiation, improving the curing property of the adhesive layer from room temperature (25°C) to around 120°C. Furthermore, through further investigations, they have found that improving the curing property of the adhesive layer controls the fluidity of the adhesive layer, thereby making it possible to suppress bleeding in the manufacturing method of a semiconductor device, and have thus completed the invention of the present disclosure.

[0008] The present disclosure provides a thermosetting resin film according to [1] to [6], a dicing-die bonding integrated film according to [7], and a method for manufacturing a semiconductor device according to [8] and [9]. [1] A thermosetting resin film containing a photobase generator that generates a base upon irradiation with light. [2] The thermosetting resin film according to [1], further containing a photosensitizer. [3] The thermosetting resin film according to [1] or [2], further containing a thermosetting resin component and an elastomer, wherein the thermosetting resin component comprises a resin that cures upon heating in the presence of the base. [4] The thermosetting resin film according to [3], further containing an inorganic filler. [5] The thermosetting resin film according to any one of [1] to [4], which is used for bonding a semiconductor chip to a substrate while embedding another semiconductor chip. [6] The thermosetting resin film according to any one of [1] to [4], which is used for bonding a semiconductor chip to another semiconductor chip while embedding part or all of the wires connected to the other semiconductor chip. [7] A dicing and die bonding integrated film comprising: a dicing film having a base layer and a pressure-sensitive adhesive layer provided on the base layer; and an adhesive layer formed on the pressure-sensitive adhesive layer of the dicing film and made of the thermosetting resin film according to any one of [1] to [4], wherein the pressure-sensitive adhesive layer contains an ultraviolet-curable pressure-sensitive adhesive. [8] A method for manufacturing a semiconductor device, comprising: a step of placing a semiconductor wafer on the adhesive layer of the dicing and die bonding integrated film described in [7]; a step of singulating the semiconductor wafer and the adhesive layer; a step of irradiating the adhesive layer of the dicing film with ultraviolet light through a base layer; a step of picking up a first semiconductor chip with an adhesive layer piece from the adhesive layer, the first semiconductor chip having an adhesive layer piece attached to the first semiconductor chip; and a step of adhering the first semiconductor chip to a substrate on which a second semiconductor chip is mounted, by the adhesive layer piece of the first semiconductor chip with the adhesive layer piece, wherein the second semiconductor chip is embedded by the adhesive layer piece of the first semiconductor chip with the adhesive layer piece.[9] A method for manufacturing a semiconductor device, comprising: a step of placing a semiconductor wafer on the adhesive layer of the dicing and die bonding integrated film described in [7]; a step of singulating the semiconductor wafer and the adhesive layer; a step of irradiating the adhesive layer of the dicing film with ultraviolet light through a base layer; a step of picking up a first semiconductor chip with an adhesive layer piece from the adhesive layer, the first semiconductor chip having an adhesive layer piece attached to the first semiconductor chip; and a step of adhering the first semiconductor chip to a second semiconductor chip with the adhesive layer piece of the first semiconductor chip with the adhesive layer piece, wherein a wire is connected to the second semiconductor chip, and a part or all of the wire is embedded in the adhesive layer piece of the first semiconductor chip with the adhesive layer piece.

[0009] According to the present disclosure, a thermosetting resin film capable of suppressing bleeding is provided. Also, according to the present disclosure, a dicing and die bonding integrated film using such a thermosetting resin film is provided. Furthermore, according to the present disclosure, a method for manufacturing a semiconductor device using such a dicing and die bonding integrated film is provided.

[0010] FIG. 1 is a schematic cross-sectional view showing one embodiment of a thermosetting resin film. FIG. 2 is a schematic cross-sectional view showing one embodiment of a dicing / die bonding integrated film. FIG. 3 is a schematic cross-sectional view showing one embodiment of a semiconductor device. FIG. 4 is a process diagram showing one embodiment of a method for manufacturing a semiconductor chip with an adhesive layer piece. FIGS. 4( a), (b), (c), (d), and (e) are cross-sectional views schematically showing each step. FIG. 5 is a process diagram showing one embodiment of a method for manufacturing a semiconductor device. FIG. 6 is a process diagram showing one embodiment of a method for manufacturing a semiconductor device. FIG. 7 is a process diagram showing one embodiment of a method for manufacturing a semiconductor device. FIG. 8 is a process diagram showing one embodiment of a method for manufacturing a semiconductor device. FIG. 9 is a process diagram showing one embodiment of a method for manufacturing a semiconductor device. FIG. 10 is a schematic cross-sectional view showing another embodiment of a semiconductor device. FIG. 11 is a schematic cross-sectional view showing another embodiment of a semiconductor device.

[0011] The present disclosure is not limited to the following examples. In the following examples, the components (including steps, etc.) are not essential unless specifically stated. The size of the components in each drawing is conceptual, and the relative size relationships between the components are not limited to those shown in each drawing. The numerical values ​​and ranges exemplified below also do not limit the present disclosure.

[0012] In this specification, a numerical range indicated using "to" indicates a range that includes the numerical values ​​before and after "to" as the minimum and maximum values, respectively. In numerical ranges described in stages in this specification, the upper or lower limit value described in one numerical range may be replaced with the upper or lower limit value of another numerical range described in stages. In numerical ranges described in this specification, the upper or lower limit value of that numerical range may be replaced with a value shown in the examples.

[0013] In this specification, (meth)acrylate means acrylate or the corresponding methacrylate, and the same applies to other similar expressions such as (meth)acrylic acid ester, (meth)acryloyl group, (meth)acrylic copolymer, etc.

[0014] Unless otherwise specified, the materials exemplified below may be used alone or in combination of two or more. When a plurality of substances corresponding to each component are present in the composition, the content of each component in the composition means the total amount of the plurality of substances present in the composition unless otherwise specified.

[0015] [Thermosetting Resin Film] FIG. 1 is a schematic cross-sectional view showing one embodiment of a thermosetting resin film. The thermosetting resin film 10A shown in FIG. 1 contains a photobase generator (hereinafter sometimes referred to as "component (A)") that generates a base upon light irradiation and may further contain a photosensitizer (hereinafter sometimes referred to as "component (B)"). The thermosetting resin film 10A may further contain a thermosetting resin component (hereinafter sometimes referred to as "component (C)") and an elastomer (hereinafter sometimes referred to as "component (D)"). The thermosetting resin film 10A may further contain an inorganic filler (hereinafter sometimes referred to as "component (E)"), a curing accelerator (hereinafter sometimes referred to as "component (F)"), a coupling agent (hereinafter sometimes referred to as "component (G)"), etc. The thermosetting resin film 10A may be a film formed from a thermosetting composition containing component (A), component (B), component (C), component (D), etc. The thermosetting resin film 10A may be in a semi-cured (B-stage) state. The thermosetting resin film 10A may be in a cured (C-stage) state after a curing treatment. The thermosetting resin film 10A may be an adhesive film for a semiconductor.

[0016] Component (A): Photobase Generator A base generator refers to a component that releases a base (organic base) that initiates anionic polymerization upon at least one of light irradiation and heat. A compound capable of releasing a base upon light irradiation is called a photobase generator (component (A)), and a compound capable of releasing a base upon heat is called a thermal base generator. Light irradiation may be, for example, ultraviolet light irradiation. In this specification, ultraviolet light refers to light within the range of 190 to 380 nm (near ultraviolet light). Note that base generators include compounds that can release a base upon both light irradiation and heat, and even compounds that are classified as thermal base generators can release a base upon light irradiation.

[0017] When the thermosetting resin film 10A contains the component (A), a base is generated in the thermosetting resin film 10A upon irradiation with ultraviolet light, which tends to improve the curing property of the thermosetting resin film 10A (adhesive layer 10) from room temperature (25° C.) to around 120° C. This controls the fluidity of the adhesive layer, and as a result, it becomes possible to suppress bleeding in the manufacturing method of a semiconductor device.

[0018] Examples of the component (A) include ammonium salts, DBU (diazabicycloundecenium) salts, DBN (diazabicyclononenium) salts, biguanidium salts, aromatic phosphonium salts, aromatic dimethylurea, aliphatic dimethylurea, guanidine salts, phosphazene salts, and imidazole salts. The component (A) may be a salt containing a borate anion, as this has good sensitivity to light. Commercially available salts containing a borate anion include, for example, U-CAT5002 (manufactured by San-Apro Co., Ltd.); P3B, BP3B, N3B, and MN3B (manufactured by Resonac Corporation).

[0019] The content of the (A) component may be 0.01 to 3 mass% based on the total amount of the thermosetting resin film. The content of the (A) component may be 0.05 mass% or more, 0.1 mass% or more, 0.2 mass% or more, or 0.3 mass% or more based on the total amount of the thermosetting resin film, since this makes it easier to obtain the effects of the present disclosure. The content of the (A) component may be 2 mass% or less, or 1 mass% or less, based on the total amount of the thermosetting resin film.

[0020] Component (B): Photosensitizer Component (B) is a component that transfers electrons or energy to component (A) after excitation by light absorption, contributing to the decomposition of component (A) or the generation of polymerization initiation species. Component (B) may have a maximum absorption wavelength in the ultraviolet region (190 to 380 nm), for example. When the thermosetting resin film 10A contains component (B) in addition to component (A), the curability of the thermosetting resin film 10A (adhesive layer 10) tends to be further improved.

[0021] Examples of component (B) include anthracene compounds such as dimethylanthracene, 9,10-diethoxyanthracene, and 9,10-dibutoxyanthracene; thioxanthone compounds such as 2-isopropylthioxanthone and diethylthioxanthone; quinone compounds such as 2-ethylanthraquinone; and naphthalene compounds such as dialkoxynaphthalene. Component (B) may contain at least one compound selected from the group consisting of anthracene compounds, thioxanthone compounds, quinone compounds, and naphthalene compounds, and may also contain a thioxanthone compound.

[0022] The content of the (B) component may be 1 to 300 parts by mass relative to 100 parts by mass of the total amount of the (A) component. The content of the (B) component may be 5 parts by mass or more, 10 parts by mass or more, or 15 parts by mass or more relative to 100 parts by mass of the total amount of the (A) component, since this makes it easier to obtain the effects of the present disclosure. The content of the (B) component may be 200 parts by mass or less, or 150 parts by mass or less relative to 100 parts by mass of the total amount of the (A) component.

[0023] Component (C): Thermosetting Resin Component Component (C) contains a thermosetting resin (hereinafter sometimes referred to as "component (C1)") that cures when heated in the presence of a base generated from component (A). Component (C1) can be a compound having a functional group that forms a crosslinked structure through a thermosetting reaction. Component (C) may further contain a curing agent (hereinafter sometimes referred to as "component (C2)") that reacts with component (C1). From the viewpoint of adhesiveness, component (C1) may contain an epoxy resin, which is a compound having an epoxy group. In that case, component (C2) may contain a phenolic resin, which is a compound having a phenolic hydroxyl group.

[0024] Examples of epoxy resins used as component (C1) include bisphenol A epoxy resins, bisphenol F epoxy resins, bisphenol S epoxy resins, phenol novolac epoxy resins, cresol novolac epoxy resins, bisphenol A novolac epoxy resins, bisphenol F novolac epoxy resins, stilbene epoxy resins, triazine skeleton-containing epoxy resins, fluorene skeleton-containing epoxy resins, triphenolmethane epoxy resins, biphenyl epoxy resins, xylylene epoxy resins, biphenyl aralkyl epoxy resins, naphthalene epoxy resins, and diglycidyl ether compounds of polyfunctional phenols and polycyclic aromatics such as anthracene. Among these, the epoxy resin may include cresol novolac epoxy resins, bisphenol F epoxy resins, bisphenol A epoxy resins, or combinations thereof, from the viewpoints of film tackiness, flexibility, etc.

[0025] The epoxy resin may contain a liquid epoxy resin that is liquid at 30°C (an epoxy resin having a softening point of 40°C or lower). That is, the epoxy resin may be a combination of a liquid epoxy resin and a solid epoxy resin that is solid at 30°C (an epoxy resin having a softening point of more than 40°C). In this specification, the softening point refers to a value measured by the ring and ball method in accordance with JIS K7234:1986. The content of the liquid epoxy resin may be 3 to 40 mass% based on the total mass of the thermosetting resin film. When component (C) contains a liquid epoxy resin, the flexibility of the thermosetting resin film tends to be improved. Furthermore, when a liquid epoxy resin and a solid epoxy resin are combined, the embeddability of semiconductor chips and wires tends to be improved.

[0026] Examples of commercially available liquid epoxy resins include EXA-830CRP (trade name, manufactured by DIC Corporation, liquid at 30°C), YDF-8170C (trade name, manufactured by Nippon Steel Chemical & Material Co., Ltd., liquid at 30°C), and EP-4088S (trade name, manufactured by ADEKA Corporation, liquid at 30°C).

[0027] The epoxy equivalent of the epoxy resin is not particularly limited, but may be 90 to 300 g / eq or 110 to 290 g / eq. When the epoxy equivalent of the epoxy resin is in this range, the flowability of the thermosetting composition when forming the thermosetting resin film tends to be easily ensured while maintaining the bulk strength of the thermosetting resin film.

[0028] Examples of phenolic resins used as component (C2) include novolak phenolic resins obtained by condensing or co-condensing phenols such as phenol, cresol, resorcinol, catechol, bisphenol A, bisphenol F, phenylphenol, and aminophenol and / or naphthols such as α-naphthol, β-naphthol, and dihydroxynaphthalene with compounds having an aldehyde group such as formaldehyde under an acidic catalyst; phenol aralkyl resins and naphthol aralkyl resins synthesized from phenols such as allylated bisphenol A, allylated bisphenol F, allylated naphthalenediol, phenol novolak, and phenol and / or naphthols with dimethoxy-para-xylene or bis(methoxymethyl)biphenyl; and the phenolic resin may include a phenylaralkyl phenolic resin, a phenol novolak resin, or a combination thereof.

[0029] The hydroxyl equivalent of the phenolic resin may be 70 g / eq or more, or 70 to 300 g / eq. When the hydroxyl equivalent of the phenolic resin is 70 g / eq or more, the storage modulus of the thermosetting resin film tends to be further increased. When the hydroxyl equivalent of the phenolic resin is 300 g / eq or less, foaming and outgassing can be further suppressed.

[0030] Commercially available phenolic resins include PSM-4326 (trade name, manufactured by Gun-ei Chemical Industry Co., Ltd., softening point: 120°C), J-DPP-140 (trade name, manufactured by JFE Chemical Corporation, softening point: 140°C), GPH-103 (trade name, manufactured by Nippon Kayaku Co., Ltd., softening point: 99 to 106°C), MEH-7800M (trade name, manufactured by Meiwa Kasei Co., Ltd., softening point: 80°C), J-DPP-85 (trade name, manufactured by JFE Chemical Corporation, softening point: 85°C), and MEH-5100-5S (trade name, manufactured by Meiwa Kasei Co., Ltd., softening point: 65°C).

[0031] When component (C1) contains an epoxy resin and component (C2) contains a phenolic resin, the ratio of the epoxy equivalent of the epoxy resin to the hydroxyl equivalent of the phenolic resin (epoxy equivalent:hydroxyl equivalent) may be 0.30 / 0.70 to 0.70 / 0.30, 0.35 / 0.65 to 0.65 / 0.35, 0.40 / 0.60 to 0.60 / 0.40, or 0.45 / 0.55 to 0.55 / 0.45 from the viewpoint of curability. When the equivalent ratio is 0.30 / 0.70 or higher, more sufficient curability tends to be obtained. When the equivalent ratio is 0.70 / 0.30 or lower, excessive viscosity can be prevented, and more sufficient fluidity can be obtained.

[0032] The softening point of component (C2) may be 50 to 200° C. or 60 to 150° C. Curing agents with a softening point of 200° C. or lower tend to have good compatibility with component (C1).

[0033] The content of the (C) component (the total content of the (C1) component and the (C2) component) may be 15% by mass or more, 20% by mass or more, 25% by mass or more, 30% by mass or more, 35% by mass or more, or 40% by mass or more, based on the total amount of the thermosetting resin film. When the content of the (A) component is 15% by mass or more, based on the total amount of the thermosetting resin film, the adhesive strength of the thermosetting resin film tends to be improved. From the viewpoint of film formability, the content of the (A) component may be 80% by mass or less, 75% by mass or less, 70% by mass or less, 65% by mass or less, or 60% by mass or less, based on the total amount of the thermosetting resin film.

[0034] Component (D): Elastomer The component (D) may be, for example, a polymer compound exhibiting a glass transition temperature (Tg) of 55° C. or less. Examples of component (D) include acrylic resin, polyester resin, polyamide resin, polyimide resin, silicone resin, butadiene resin, and acrylonitrile resin.

[0035] The component (D) may contain an acrylic resin from the viewpoint of fluidity. Here, the acrylic resin refers to a polymer containing a monomer unit derived from a (meth)acrylic acid ester. The content of the structural unit derived from a (meth)acrylic acid ester in the acrylic resin may be, for example, 70% by mass or more, 80% by mass or more, or 90% by mass or more, based on the total amount of the acrylic resin. The acrylic resin may contain a monomer unit derived from a (meth)acrylic acid ester having a crosslinkable functional group such as an epoxy group, an alcoholic or phenolic hydroxyl group, or a carboxyl group. The acrylic resin may be an acrylic rubber, which is a copolymer containing a (meth)acrylic acid ester and acrylonitrile as monomer units.

[0036] The glass transition temperature (Tg) of component (D) (e.g., acrylic resin) may be -50°C or higher, -30°C or higher, 0°C or higher, or 3°C or higher, or may be 50°C or lower, 45°C or lower, 40°C or lower, 35°C or lower, 30°C or lower, or 25°C or lower. When the Tg of component (D) is low, the thermosetting resin film tends to have good flexibility. A thermosetting resin film with good flexibility is easily cut along with the semiconductor wafer during dicing, thereby effectively suppressing the generation of burrs. A thermosetting resin film with good flexibility is easily attached to a semiconductor wafer while sufficiently eliminating voids, and chipping during dicing due to reduced adhesion can also be suppressed. The glass transition temperature (Tg) refers to a value measured using a DSC (differential scanning calorimeter) (e.g., "Thermo Plus 2" manufactured by Rigaku Corporation). The Tg of the component (D) can be adjusted to fall within the desired range by adjusting the type and content of the structural unit that constitutes the component (D) (in the case of an acrylic resin, a structural unit derived from a (meth)acrylic acid ester).

[0037] The weight average molecular weight (Mw) of component (D) (e.g., acrylic resin) may be 100,000 or more, 200,000 or more, or 300,000 or more, or may be 3,000,000 or less, 2,000,000 or less, or 1,000,000 or less. When the Mw of component (D) is within this range, film formability and the strength, flexibility, tackiness, etc. of the thermosetting resin film can be appropriately controlled, and excellent reflowability and improved embeddability can be achieved. Mw refers to a value measured by gel permeation chromatography (GPC) and converted using a calibration curve based on standard polystyrene.

[0038] Commercially available acrylic resins include SG-70L, SG-708-6, WS-023 EK30, SG-280 EK23, and SG-P3 (all manufactured by Nagase ChemteX Corporation), and H-CT-865 (manufactured by Resonac Corporation).

[0039] The content of component (D) may be 3% by mass or more, 5% by mass or more, 7% by mass or more, or 10% by mass or more, based on the total amount of the thermosetting resin film. When the content of component (D) is 3% by mass or more, based on the total amount of the thermosetting resin film, the viscosity of the thermosetting resin film increases, and improved handleability of the film and suppression of bleeding can be expected. The content of component (D) may be 40% by mass or less, 30% by mass or less, 25% by mass or less, or 20% by mass or less, based on the total amount of the thermosetting resin film. When the content of component (D) is 40% by mass or less, based on the total amount of the thermosetting resin film, embeddability tends to be further improved.

[0040] Component (E): Inorganic Filler Examples of the component (E) include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, silica, etc. Component (E) may contain silica from the viewpoint of adjusting the melt viscosity.

[0041] From the viewpoint of flowability, the average particle size of the (E) component may be 0.01 μm (10 nm) or more, 0.03 μm (30 nm) or more, 0.05 μm (50 nm) or more, or 0.1 μm (100 nm) or more, and may be 10 μm or less, 5 μm or less, 1.5 μm (1500 nm) or less, 1.0 μm (1000 nm) or less, 0.8 μm (800 nm) or less, or 0.6 μm (600 nm) or less. Two or more (E) components with different average particle sizes may be combined. Here, the average particle size refers to the particle size at a cumulative frequency of 50% in the particle size distribution determined by laser diffraction / scattering. The average particle size of the (E) component can also be determined by using a thermosetting resin film containing the (E) component. In this case, a thermosetting resin film is heated to decompose the resin component, and the resulting residue is dispersed in a solvent to prepare a dispersion. From the particle size distribution obtained by applying a laser diffraction / scattering method to this dispersion, the average particle size of component (E) can be determined.

[0042] The content of the component (E) is 10 to 50% by mass, based on the total amount of the thermosetting resin film, and may be 15% by mass or more, 18% by mass or more, 20% by mass or more, or 25% by mass or more, and may be 45% by mass or less, 40% by mass or less, or 35% by mass or less.

[0043] The content of the component (E) may be 10 to 200 parts by mass, relative to 100 parts by mass of the total amount of the component (C). When the content of the component (E) is within this range, the adhesive strength of the thermosetting resin film tends to be improved. The content of the component (E) may be 20 parts by mass or more, 30 parts by mass or more, or 40 parts by mass or more, relative to 100 parts by mass of the total amount of the component (C), and may be 150 parts by mass or less, 120 parts by mass or less, 100 parts by mass or less, or 80 parts by mass or less.

[0044] Component (F): Curing Accelerator Examples of the component (F) include imidazoles and derivatives thereof, organic phosphorus compounds, secondary amines, tertiary amines, quaternary ammonium salts, etc. Among these, from the viewpoint of reactivity, the component (F) may be imidazoles and derivatives thereof.

[0045] Examples of imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2-methylimidazole.

[0046] Component (G): Coupling Agent Component (G) may be a silane coupling agent. Examples of the silane coupling agent include γ-ureidopropyltriethoxysilane, γ-mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, and 3-(2-aminoethyl)aminopropyltrimethoxysilane.

[0047] The thermosetting resin film may further contain other components, such as pigments, ion scavengers, and antioxidants.

[0048] The total content of the (F) component, the (G) component, and other components may be 0.1 mass% or more, 0.3 mass% or more, or 0.5 mass% or more, based on the total amount of the thermosetting resin film, and may be 30 mass% or less, 20 mass% or less, 10 mass% or less, or 5 mass% or less.

[0049] The thermosetting resin film 10A can be formed, for example, by applying a thermosetting composition containing each component to a support film. A varnish of the thermosetting composition (composition varnish) may be used to form the thermosetting resin film 10A. When using a composition varnish, the components to be added are mixed or kneaded in a solvent to prepare the composition varnish, and the resulting composition varnish is applied to a support film. The solvent is then removed by heating and drying, thereby obtaining the thermosetting resin film 10A.

[0050] The support film is not particularly limited as long as it can withstand the above-mentioned heat drying. Examples of the support film include resin films such as polyester film, polyethylene film, polypropylene film, polyethylene terephthalate film, polyimide film, polyetherimide film, polyethylene naphthalate film, polymethylpentene film, and polytetrafluoroethylene film. The support film may be a multilayer film combining two or more types of films, and may have a surface treated with a silicone-based, silica-based, or other release agent. The thickness of the support film may be, for example, 10 to 200 μm or 20 to 170 μm.

[0051] The mixing or kneading can be carried out using a dispersing machine such as a general stirrer, a mortar and pestle, a triple roll mill, a ball mill, etc. Mixing or kneading may be carried out using a suitable combination of a plurality of these dispersing machines.

[0052] The solvent used in preparing the composition varnish is not limited as long as it can uniformly dissolve, knead, or disperse each component, and conventionally known solvents can be used. Examples of such solvents include ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone, as well as dimethylformamide, dimethylacetamide, N-methylpyrrolidone, toluene, and xylene. From the viewpoints of drying speed and cost, the solvent may be methyl ethyl ketone or cyclohexanone.

[0053] The composition varnish can be applied to the support film by any known method, such as knife coating, roll coating, spray coating, gravure coating, bar coating, curtain coating, etc. The heat drying conditions are not particularly limited as long as the solvent used is sufficiently evaporated, and may be, for example, 50 to 150°C for 1 to 30 minutes.

[0054] The thickness of the thermosetting resin film 10A can be adjusted appropriately depending on the size of the object to be embedded. The thickness of the thermosetting resin film 10A may be, for example, 1 μm or more, 3 μm or more, 20 μm or more, 25 μm or more, 30 μm or more, 35 μm or more, 40 μm or more, 50 μm or more, 60 μm or more, 70 μm or more, or 80 μm or more, and may be 200 μm or less, 150 μm or less, 120 μm or less, 100 μm or less, 80 μm or less, or 60 μm or less. When the thermosetting resin film 10A is a thermosetting resin film for FOD, in order to properly embed the entire semiconductor chip (e.g., a controller chip), the thickness of the thermosetting resin film 10A may be, for example, 40 to 200 μm, 60 to 150 μm, or 80 to 120 μm. When the thermosetting resin film 10A is a thermosetting resin film for FOW, the thickness of the thermosetting resin film 10A may be, for example, 20 to 120 μm, 25 to 80 μm, or 30 to 60 μm, in order to embed the wires so that they do not come into contact with the semiconductor chip.

[0055] The thermosetting resin film 10A formed on the support film may have a cover film on the side of the thermosetting resin film opposite the support film to prevent damage or contamination. Examples of the cover film include polyethylene film, polypropylene film, and film treated with a surface release agent. The thickness of the cover film may be, for example, 15 to 200 μm or 30 to 170 μm.

[0056] The thermosetting resin film 10A can be used, for example, as a protective sheet for protecting the back surface of a semiconductor chip of a flip-chip type semiconductor device, or as a sealing sheet for sealing the gap between the surface of the semiconductor chip of a flip-chip type semiconductor device and an adherend.

[0057] [Dicing and die bonding integrated film] Figure 2 is a schematic cross-sectional view showing one embodiment of a dicing and die bonding integrated film. The thermosetting resin film 10A may be supplied in the form of the dicing and die bonding integrated film shown in Figure 2. The dicing and die bonding integrated film 100 shown in Figure 2 comprises a dicing film 40 having a base layer 30 and a pressure-sensitive adhesive layer 20 provided on the base layer 30, and an adhesive layer 10 made of the thermosetting resin film 10A provided on the pressure-sensitive adhesive layer 20 of the dicing film 40. The dicing and die bonding integrated film 100 may further comprise a protective film provided on the surface of the adhesive layer 10 opposite to the pressure-sensitive adhesive layer 20. The dicing and die bonding integrated film 100 may be in the form of a film, a sheet, or a tape.

[0058] Examples of the base layer 30 include the same resin films as those exemplified for the support film. The base layer 30 may be a resin film that has been surface-treated, as necessary, by primer application, UV treatment, corona discharge treatment, polishing treatment, or etching treatment. The thickness of the base layer 30 may be, for example, 10 to 200 μm or 20 to 170 μm.

[0059] The adhesive layer 20 includes an ultraviolet-curable adhesive. The ultraviolet-curable adhesive is an adhesive whose adhesiveness decreases when irradiated with ultraviolet light. The thickness of the adhesive layer 20 can be set appropriately depending on the shape and dimensions of the semiconductor device, and may be, for example, 1 to 100 μm, 5 to 70 μm, or 10 to 40 μm.

[0060] Examples of the protective film include the same films as those exemplified as the cover film, and the thickness of the protective film may be, for example, 15 to 200 μm or 30 to 170 μm.

[0061] [Semiconductor Device and Manufacturing Method Thereof] Figure 3 is a schematic cross-sectional view showing one embodiment of a semiconductor device, illustrating an example of a semiconductor device manufactured using a dicing / die-bonding integrated film. The semiconductor device 200 shown in Figure 3 is primarily composed of a substrate 14, a first semiconductor chip Wa and a second semiconductor chip Waa mounted on the substrate 14, a sealing layer 42 that seals the first semiconductor chip Wa, and an adhesive layer piece 10a (a thermosetting resin film piece) that adheres the first semiconductor chip Wa to the substrate 14. The substrate 14 has an organic substrate 90 and circuit patterns 84, 94 provided on the organic substrate 90. The second semiconductor chip Waa is adhered to the substrate 14 with an adhesive 41. A second wire 88 is connected to the second semiconductor chip Waa, and the second semiconductor chip Waa is electrically connected to the circuit pattern 84 via the second wire 88. The second semiconductor chip Waa and the second wire 88 are entirely embedded in the adhesive layer piece 10a (thermosetting resin film piece). The first semiconductor chip Wa is connected to a first wire 98, and the first semiconductor chip Wa is electrically connected to the circuit pattern 84 via the first wire 98. The first semiconductor chip Wa and the first wire 98 are entirely embedded in the sealing layer 42.

[0062] 4 is a process diagram showing one embodiment of a method for manufacturing a semiconductor chip with an adhesive layer piece. Figures 4(a), (b), (c), (d), and (e) are cross-sectional views schematically illustrating each step. The manufacturing method for the semiconductor chip with an adhesive layer piece (first semiconductor chip with an adhesive layer piece) shown in Figure 4 includes the steps of placing a semiconductor wafer W on the adhesive layer 10 of a dicing / die bonding integrated film 100 (wafer lamination step, see Figures 4(a) and 4(b)), singulating the semiconductor wafer W and the adhesive layer 10 (dicing step, see Figure 4(c)), irradiating the adhesive layer 20 of the dicing film 40 with ultraviolet light through the base layer 30 (ultraviolet irradiation step, see Figure 4(d)), and picking up the first semiconductor chip 60 with an adhesive layer piece, which has the first semiconductor chip Wa and the adhesive layer piece 10a attached to the first semiconductor chip Wa, from the adhesive layer 20a (pickup step, see Figure 4(e)). In this way, the first semiconductor chip 60 with the adhesive layer piece attached can be obtained.

[0063] In the wafer lamination process, the dicing and die bonding integrated film 100 is placed in a predetermined device. Then, the front surface Ws of the semiconductor wafer W is attached to the adhesive layer 10 of the dicing and die bonding integrated film 100 (see FIGS. 4( a) and 4(b)). The circuit surface of the semiconductor wafer W may be provided on the surface opposite to the front surface Ws.

[0064] Examples of the semiconductor wafer W include single crystal silicon, polycrystalline silicon, various ceramics, and compound semiconductors such as gallium arsenide. The semiconductor wafer W may be a thin semiconductor wafer having a thickness of, for example, 10 to 100 μm.

[0065] The thickness of the first semiconductor chip Wa may be 10 to 100 μm. The first semiconductor chip Wa may have a width of 20 mm or less. The width (or the length of one side) of the first semiconductor chip Wa may be 3 to 15 mm or 5 to 10 mm.

[0066] In the dicing step, the semiconductor wafer W and the adhesive layer 10 are diced into individual pieces (see FIG. 4(c)). At this time, a part of the pressure-sensitive adhesive layer 20, or the entire pressure-sensitive adhesive layer 20 and a part of the base material layer 30 may be diced into individual pieces. In this way, the dicing and die-bonding integrated film 100 also functions as a dicing sheet.

[0067] In the ultraviolet irradiation step, ultraviolet light is irradiated onto the pressure-sensitive adhesive layer 20 through the base layer 30 (see FIG. 4(d)). In the ultraviolet irradiation, the wavelength of the ultraviolet light may be 190 to 380 nm. The ultraviolet irradiation conditions are an illuminance and an irradiation amount of 30 to 3200 mW / cm. ２ and 50 to 800 mJ / cm ２ When the pressure-sensitive adhesive layer 20 is irradiated with ultraviolet light, the ultraviolet-curable pressure-sensitive adhesive contained in the pressure-sensitive adhesive layer 20 is cured, and the adhesiveness to the adhesive layer 10 is reduced.

[0068] In the ultraviolet irradiation step, ultraviolet rays can also be irradiated onto the adhesive layer 10. Since the adhesive layer 10 contains the component (A), a base can be generated by ultraviolet irradiation. This improves the curing property of the adhesive layer from room temperature (25°C) to around 120°C, controls the fluidity of the adhesive layer, and makes it possible to suppress bleeding in the manufacturing method of a semiconductor device.

[0069] In the pick-up process, the base layer 30 is expanded to separate the first semiconductor chip Wa and the adhesive layer piece-attached first semiconductor chip 60 having the adhesive layer piece 10a attached to the first semiconductor chip Wa from each other, while the adhesive layer piece-attached first semiconductor chip 60, which has been pushed up by a needle 72 from the base layer 30 side, is sucked by a suction collet 74 and picked up from the adhesive layer 20a (see FIG. 4(e)). The first semiconductor chip Wa is obtained by dividing the semiconductor wafer W, and the adhesive layer piece 10a is obtained by dividing the adhesive layer 10. The adhesive layer 20a is obtained by dividing the adhesive layer 20 and may contain a cured product of an ultraviolet-curable adhesive. The adhesive layer 20a may remain on the base layer 30 after the adhesive layer piece-attached first semiconductor chip 60 is picked up. In the pick-up process, expanding the base layer 30 is not necessarily required, but expanding the base layer 30 can further improve pick-up performance.

[0070] The amount of push-up by the needle 72 can be set as appropriate. Furthermore, from the viewpoint of ensuring sufficient pick-up capability even for an extremely thin wafer, for example, two- or three-stage push-up may be performed. Furthermore, the first semiconductor chip 60 with the adhesive layer piece attached may be picked up by a method other than the method using the suction collet 74.

[0071] 5, 6, 7, 8, and 9 are process diagrams illustrating one embodiment of a method for manufacturing a semiconductor device, specifically, a process diagram illustrating an example of a method for manufacturing the semiconductor device 200 shown in FIG. 5. The manufacturing method shown in FIGS. 5 to 9 includes the steps of: adhering a second semiconductor chip Waa to a substrate 14 via an adhesive 41; providing a second wire 88 connecting the second semiconductor chip Waa to the substrate 14 (circuit pattern 84); pressing the first semiconductor chip 60 with the adhesive layer piece obtained by the manufacturing method shown in FIG. 4 to the substrate 14, thereby adhering the first semiconductor chip Wa to the substrate 14 so that the second semiconductor chip Waa and the second wire 88 are embedded by the adhesive layer piece 10a (thermosetting resin film piece); and providing a first wire 98 connecting the first semiconductor chip Wa to the substrate 14 (circuit pattern 84). Then, by forming a sealing layer 42, the semiconductor device 200 shown in FIG. 4 can be obtained.

[0072] The thickness of the second semiconductor chip Waa may be 10 to 170 μm. The second semiconductor chip Waa may be a controller chip for driving the semiconductor device 200. The second semiconductor chip Waa may be a flip-chip type semiconductor chip. The size of the second semiconductor chip Waa is usually equal to or smaller than the size of the first semiconductor chip Wa. The adhesive 41 interposed between the second semiconductor chip Waa and the substrate 14 may be a known semiconductor adhesive used in the relevant field.

[0073] 5, the substrate 14 (circuit pattern 84) and the second semiconductor chip Waa are electrically connected via second wires 88. The second wires 88 connecting the second semiconductor chip Waa and the substrate 14 (circuit pattern 84) may be, for example, gold wires, aluminum wires, or copper wires. The heating temperature for connecting the second wires 88 may be within a range of 80 to 250°C or 80 to 220°C. The heating time for connecting the second wires 88 may be several seconds to several minutes. For connecting the second wires 88, ultrasonic vibration energy and compression energy due to applied pressure may be applied.

[0074] The first semiconductor chip 60 with adhesive layer pieces shown in FIG. 6 can be obtained by the method for manufacturing a semiconductor chip with adhesive layer pieces shown in FIG.

[0075] As shown in FIG. 7 , a first semiconductor chip Wa and an adhesive layer piece-attached first semiconductor chip 60 having an adhesive layer piece 10a attached to the first semiconductor chip Wa are placed so that the second wire 88 and the second semiconductor chip Waa are covered by the adhesive layer piece 10a. Next, as shown in FIG. 8 , the first semiconductor chip Wa is pressure-bonded to the substrate 14, thereby fixing the first semiconductor chip Wa to the substrate 14. The heating temperature for pressure-bonding may be 50 to 200°C or 100 to 150°C. A higher heating temperature for pressure-bonding tends to soften the adhesive layer piece 10a, thereby improving embeddability. The pressure-bonding time may be 0.5 to 20 seconds or 1 to 5 seconds. The pressure for pressure-bonding may be 0.01 to 5 MPa or 0.02 to 2 MPa.

[0076] After the pressure bonding, the structure including the adhesive layer pieces 10a may be further heated to cure the adhesive layer pieces 10a. The temperature and time for curing may be appropriately set depending on the curing temperature of the adhesive layer pieces 10a, etc. The temperature may be changed in stages. The heating temperature may be, for example, 40 to 300°C or 60 to 200°C. The heating time may be, for example, 30 to 300 minutes.

[0077] 9, the substrate 14 and the first semiconductor chip Wa are electrically connected via a first wire 98. The type and connection method of the first wire 98 may be the same as those of the second wire 88.

[0078] Thereafter, the sealing layer 42 that seals the circuit pattern 84, the first wire 98, and the first semiconductor chip Wa is formed from a sealing material. The sealing layer 42 can be formed, for example, by a conventional method using a mold. After the sealing layer 42 is formed, the adhesive layer piece 10a and the sealing layer 42 may be further thermally cured by heating. The heating temperature for this purpose may be, for example, 165 to 185°C, and the heating time may be approximately 0.5 to 8 hours.

[0079] FIG. 10 is a schematic cross-sectional view showing another embodiment of a semiconductor device. The semiconductor device 201 is primarily composed of a substrate 14, a first semiconductor chip Wa and a second semiconductor chip Waa mounted on the substrate 14, a sealing layer 42 that seals the first semiconductor chip Wa and the second semiconductor chip Waa, and an adhesive layer piece 10a (a thermosetting resin film piece) that bonds the first semiconductor chip Wa to the second semiconductor chip Waa. The substrate 14 includes an organic substrate 90, circuit patterns 84 and 94 provided on the organic substrate 90, and a connection terminal 95 provided on the surface of the organic substrate 90 opposite the circuit patterns 84 and 94. The second semiconductor chip Waa is bonded to the substrate 14 with an adhesive 41. A second wire 88 is connected to the second semiconductor chip Waa, and the second semiconductor chip Waa is electrically connected to the circuit pattern 84 via the second wire 88. A portion of the second wire 88 is embedded in the adhesive layer piece 10a (thermosetting resin film piece). A first wire 98 is connected to the first semiconductor chip Wa, and the first semiconductor chip Wa is electrically connected to the circuit pattern 84 via the first wire 98.

[0080] The semiconductor device 201 shown in Figure 10 can be manufactured by a method similar to that of the semiconductor device 200, which includes a step of adhering the first semiconductor chip Wa to the second semiconductor chip Waa with an adhesive layer piece 10a (a thermosetting resin film piece).

[0081] 11 is a schematic cross-sectional view showing another embodiment of a semiconductor device. The semiconductor device 202 is primarily composed of a substrate 14 (organic substrate 90), a first semiconductor chip Wa and a second semiconductor chip Waa mounted on the substrate 14, a sealing layer 42 that seals the first semiconductor chip Wa and the second semiconductor chip Waa, and an adhesive layer piece 10a (thermosetting resin film piece) that adheres the first semiconductor chip Wa to the substrate 14 while embedding the entire second semiconductor chip Waa. The second semiconductor chip Waa is a flip-chip type semiconductor chip and is electrically connected to the substrate 14 via multiple electrodes 96. An underfill 50 is filled between the second semiconductor chip Waa and the substrate 14.

[0082] The present disclosure will be specifically described below based on examples, but the present disclosure is not limited to these examples.

[0083] Examples 1 to 5 [Production of Thermosetting Resin Film] <Preparation of Composition Varnish> The composition varnishes of Examples 1 to 5 were prepared by stirring components (A) to (G) and cyclohexanone until each component was homogeneous, in the composition ratios (unit: parts by mass) shown in Table 1. The numerical values ​​for each component shown in Table 1 refer to parts by mass of the solid content.

[0084] Component (A): Photobase Generator (A-1) U-CAT5002 (trade name, manufactured by San-Apro Co., Ltd., tetraphenylborate salt of benzyl-modified DBU) Component (B): Photosensitizer (B-1) IPTX (2-isopropylthioxanthone) Component (C): Thermosetting Resin Component (C1) Thermosetting Resin (C1-1) N-500P (trade name, manufactured by DIC Corporation, o-cresol novolac epoxy resin, epoxy equivalent: 204 g / eq, softening point: 75 to 85°C) (C1-2) EXA-830CRP (trade name, manufactured by DIC Corporation, liquid bisphenol F epoxy resin, epoxy equivalent: 159 g / eq) (C2) Curing Agent (C2-1) MEH-7800M (trade name, Meiwa Kasei Co., Ltd. (now UBE Corporation), phenylaralkyl phenol resin, hydroxyl equivalent: 174 g / eq, softening point: 80°C) (D) component: elastomer (D-1) SG-P3 solvent change product (trade name, Nagase ChemteX Corporation, acrylic resin, weight average molecular weight: 800,000, Tg: 12°C) (E) component: inorganic filler (E-1) SC2050-HLG (trade name, Admatechs Co., Ltd., silica filler dispersion, average particle size: 0.50 μm) (F) component: curing accelerator (F-1) 2PZ-CN (trade name, Shikoku Chemicals Corporation, 1-cyanoethyl-2-phenylimidazole) (G) component: coupling agent (G-1) A-189 (trade name, manufactured by Momentive Performance Materials Japan, LLC, γ-mercaptopropyltrimethoxysilane) (G-2) Z-6119 (trade name, manufactured by Dow-Toray Industries, Inc., 3-ureidopropyltriethoxysilane)

[0085] <Preparation of Thermosetting Resin Films> The composition varnishes of Examples 1 to 5 were filtered through a 100-mesh filter and vacuum degassed. A 38 μm-thick polyethylene terephthalate (PET) film that had been subjected to a release treatment was prepared as a substrate layer, and the composition varnish after vacuum degassing was applied to the PET film. The applied composition varnish was heated and dried in two stages, first at 90°C for 5 minutes and then at 140°C for 5 minutes, to obtain the thermosetting resin films of Examples 1 to 5 in a B-stage state. The thickness of the thermosetting resin film was adjusted to 60 μm by adjusting the amount of composition varnish applied. Two of the resulting 60 μm-thick thermosetting resin films were prepared and bonded together at 70°C to produce a 120 μm-thick thermosetting resin film.

[0086]

[0087] [Evaluation of Thermosetting Resin Films] <Measurement of Curing Time> Using the thermosetting resin films of Examples 1 to 5, the curing time of the thermosetting resin films was measured when the thermosetting resin films were irradiated with light and when they were not irradiated with light. Note that the measurement samples when irradiated with light were prepared by the following procedure. A UV conveyor device (iGrandage, manufactured by iGraphics Co., Ltd.) was used, and an exposure dose of 650 mJ / cm was used with a 365 nm LED light source. ２ The conveyor speed and irradiation distance were adjusted so that the thermosetting resin film was irradiated with light. Then, 120 μm thick thermosetting resin films were stacked until the thickness reached 960 μm, and these were laminated at 70 ° C to obtain a measurement sample. The measurement sample without light irradiation was obtained in the same manner as the measurement sample with light irradiation, except that light irradiation was not performed. Subsequently, for these measurement samples, the change in viscosity over time was measured using a rheometer (HAAKE RheoStress 600, manufactured by ThermoElectron) under conditions of a measurement temperature of 120 ° C and a frequency of 4 Hz, and the time at which the viscosity reached 1000 Pa s was defined as the curing time of the thermosetting resin film. The results are shown in Table 2.

[0088]

[0089] <Evaluation of Embeddability> (Preparation of Evaluation Samples) The difference in embeddability between cases where a thermosetting resin film was irradiated with light and cases where it was not irradiated with light was simply evaluated. A copper foil tape (5 mm long, 10 mm wide, 70 μm thick) was attached to a polyethylene terephthalate (PET) film (210 mm long, 300 mm wide, 125 μm thick), and the same copper foil tape was further attached to the copper foil tape to obtain a first laminate having a PET film and a 140 μm thick copper foil tape layer. Subsequently, three thermosetting resin films (120 μm thick) of Example 1 were stacked and bonded at 70°C to prepare a 360 μm thick film. This was cut to a length of 10 mm and a width of 25 mm and bonded to a glass slide (26 mm long, 76 mm wide, 1 mm thick) to obtain a second laminate having a glass slide and a 360 μm thick film. Two sets of a first laminate and a second laminate were prepared. For one set, the first laminate was placed on a hot plate so that the PET film was in contact with the first laminate, and then the second laminate was placed on the first laminate so that the copper foil tape layer was embedded in the thermosetting resin film. The second laminate was then pressure-bonded to the first laminate under conditions of a temperature of 110°C, a time of 30 seconds, and a pressure of 0.45 MPa, thereby preparing an evaluation sample (evaluation sample A) without light irradiation. For the other set, the thermosetting resin film of the second laminate was irradiated with light at an illuminance of 2650 mW / cm using a UV conveyor device (iGrandage, manufactured by iGraphics Co., Ltd.). ２ and an integrated light intensity of 150 mJ / cm ２ After leaving the laminate for 30 minutes after irradiation, the first laminate and the second laminate were placed on a hot plate in such a way that the copper foil tape layer was embedded in the thermosetting resin film, and pressure-bonded under the same conditions as for Evaluation Sample A, thereby producing an evaluation sample (Evaluation Sample B) in the case of light irradiation.

[0090] (Measurement of Bleeding Amount) For Evaluation Sample A and Evaluation Sample B, the position of the thermosetting resin film after compression bonding was measured from the position of the thermosetting resin film before compression bonding, and this was evaluated as the bleeding amount when embedding the copper foil tape layer. The bleeding amount for Evaluation Sample A was 0.14 cm, and the bleeding amount for Evaluation Sample B was 0.08 cm.

[0091] As described above, it was found that the thermosetting resin films of Examples 1 to 5 had improved curing properties of the adhesive layer at 120°C after light irradiation. It was also found that the thermosetting resin film of Example 1 had a reduced amount of bleeding when embedding a copper foil tape layer. Like the thermosetting resin film of Example 1, the thermosetting resin films of Examples 2 to 5 also had improved curing properties of the adhesive layer after light irradiation, and therefore it is expected that the amount of bleeding when embedding a copper foil tape layer will be reduced. These results confirmed that the thermosetting resin film of the present disclosure is capable of suppressing bleeding.

[0092] 10...adhesive layer, 10A...thermosetting resin film, 10a...adhesive layer piece, 14...substrate, 20, 20a...pressure-sensitive adhesive layer, 30...base material layer, 40...dicing film, 41...adhesive, 42...sealing layer, 50...underfill, 60...first semiconductor chip with adhesive layer piece, 72...needle, 74...suction collet, 84, 94...circuit pattern, 88...second wire, 90...organic substrate, 98...first wire, 95...connection terminal, 96...electrode, 100...dicing and die bonding integrated film, 200, 201, 202...semiconductor device, Wa...first semiconductor chip, Waa...second semiconductor chip.

Claims

1. A thermosetting resin film containing a photobase generator that generates a base upon exposure to light.

2. The thermosetting resin film according to claim 1, further comprising a photosensitizer.

3. The thermosetting resin film according to claim 1, further comprising a thermosetting resin component and an elastomer, wherein the thermosetting resin component comprises a resin that cures when heated in the presence of the base.

4. The thermosetting resin film according to claim 3, further comprising an inorganic filler.

5. The thermosetting resin film according to any one of claims 1 to 4, which is used to bond a semiconductor chip to a substrate while embedding another semiconductor chip therein.

6. The thermosetting resin film according to any one of claims 1 to 4, which is used to bond a semiconductor chip to another semiconductor chip while partially or entirely embedding wires connected to the other semiconductor chip.

7. A dicing and die bonding integrated film comprising: a dicing film having a base layer and a pressure-sensitive adhesive layer provided on the base layer; and an adhesive layer formed on the pressure-sensitive adhesive layer of the dicing film and consisting of the thermosetting resin film according to any one of claims 1 to 4, wherein the pressure-sensitive adhesive layer contains an ultraviolet-curable pressure-sensitive adhesive.

8. A method for manufacturing a semiconductor device, comprising the steps of: placing a semiconductor wafer on the adhesive layer of the dicing and die bonding integrated film described in claim 7; singulating the semiconductor wafer and the adhesive layer; irradiating the adhesive layer of the dicing film with ultraviolet light through a base layer; picking up a first semiconductor chip with an adhesive layer piece from the adhesive layer, the first semiconductor chip having an adhesive layer piece attached to the first semiconductor chip; and adhering the first semiconductor chip to a substrate on which a second semiconductor chip is mounted, by means of the adhesive layer piece of the first semiconductor chip with the adhesive layer piece, wherein the second semiconductor chip is embedded by the adhesive layer piece of the first semiconductor chip with the adhesive layer piece.

9. A method for manufacturing a semiconductor device, comprising the steps of: placing a semiconductor wafer on the adhesive layer of the dicing and die bonding integrated film described in claim 7; singulating the semiconductor wafer and the adhesive layer; irradiating the adhesive layer of the dicing film with ultraviolet light through a base layer; picking up from the adhesive layer a first semiconductor chip with an adhesive layer piece, the first semiconductor chip having an adhesive layer piece attached to the first semiconductor chip; and adhering the first semiconductor chip to a second semiconductor chip with the adhesive layer piece of the first semiconductor chip with the adhesive layer piece, wherein a wire is connected to the second semiconductor chip, and the wire is partially or entirely embedded in the adhesive layer piece of the first semiconductor chip with the adhesive layer piece.

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