Systems and methods for enhancement of solar panel efficiency

WO2025198679A3PCT designated stage expired Publication Date: 2026-02-19QSOLX INC
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Patent Information

Application Number
PCT/US2024/059559
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-07-14
Filing Date
2024-12-11
Publication Date
2026-02-19

AI Technical Summary

Technical Problem

Solar panels experience efficiency losses due to energy degradation and aging, leading to frequent replacements and high installation costs.

Method used

A device configured to generate electromagnetic waves, including metal components and quantum wells/quantum dots, enhances solar panel efficiency by energizing electrons in the valence band to the conduction band, increasing power generation.

Benefits of technology

Enhances solar panel efficiency by repopulating electrons in the valence band, allowing more photons to be absorbed, thereby increasing current and reducing thermalization losses.

✦ Generated by Eureka AI based on patent content.

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Abstract

A system (100) for enhancing solar panel efficiency includes a device (200) configured to generate electromagnetic waves; and at least one solar panel (102), wherein the at least one solar panel (102) is coupled to the device (200), and wherein the at least one solar panel (102) is configured to generate an enhanced photovoltaic (PV) outage voltage and current in response to incident radiation emitted by the device (200).
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Description

SYSTEMS AND METHODS FOR ENHANCEMENT OF SOLAR PANEL EFFICIENCYCROSS-REFERENCE TO RELATED APPLICATIONS AND CLAIM OF PRIORITY

[0001] This application claims the benefit of, and priority to, U.S. Provisional Patent Application No. 63 / 609,347, filed on December 13, 2023, and U.S. Provisional Patent Application No. 63 / 671,233, filed on July 14, 2024 the entire contents of each of which are hereby incorporated herein by reference.TECHNICAL FIELD

[0002] The subject matter of the present disclosure relates generally to systems and methods for enhancement of solar panel efficiency. More particularly, the subject matter of the present disclosure relates to the use of a device configured to generate electromagnetic waves for improving the efficiency of solar panels.BACKGROUND

[0003] Solar energy is a clean, renewable, and abundant form of energy that does not negatively affect the environment, and in turn the climate, like traditional fossil fuels. The use of solar energy also lends hand to the reduction of greenhouse gas emissions and air pollution. However, solar panels that generate said solar energy face many unique efficiency challenges and shortcomings. In particular, solar panels often experience energy losses when converting collected sunlight to solar energy power, otherwise known as photovoltaic (“PV”) energy. With time, and as degradation and aging of the solar panel occurs, the production of PV energy is lessened and the overall efficiency of the solar panel, and its embedded solar cell, is negatively impacted. This loss of efficiency makes it so these solar panels are replaced more frequently, lending hand to high costs associated with the installation process.

[0004] Accordingly, there is a need for enhancement of solar panel efficiency through the generation of electromagnetic waves.SUMMARY

[0005] An aspect of the present disclosure provides a system for enhancing solar panel efficiency. The system includes a device configured to generate electromagnetic waves; and at least one solar panel, wherein the at least one solar panel is coupled to the device, and wherein the at least one solar panel is configured to generate an enhanced photovoltaic (PV) outage voltage and current in response to incident radiation emitted by the device.

[0006] In an aspect of the present disclosure, the device configured to generate electromagnetic waves may include a material; at least one electrode disposed along an external perimeter of the material; and a plurality of metal components periodically disposed along the material.

[0007] In another aspect of the present disclosure, the plurality of metal components may include at least one of a quantum well or a quantum dot comprised of at least one of a metal dot or a metal line.

[0008] In yet another aspect of the present disclosure, a voltage in the range of about 200V to about 500V may be applied across the device configured to generate electromagnetic waves, wherein the voltage may be lower than an avalanche breakdown voltage of the device but high enough to sustain a current in gaps present between the plurality of metal components.

[0009] In another aspect of the present disclosure, the voltage may be applied from a first end portion of the device configured to generate electromagnetic waves to a second endportion of the device configured to generate electromagnetic waves to generate an electromagnetic radiation.

[0010] In another aspect of the present disclosure, a charge flow of the electromagnetic radiation formed by the device configured to generate electromagnetic waves may be terminated to generate electromagnetic waves. room In yet another aspect of the present disclosure, the electromagnetic waves may be configured to energize at least one electron present in a lower level of a valence band of the at least one solar panel to a top level of the valence band of the at least one solar panel to create an additional solar output.

[0012] In another aspect of the present disclosure, the device configured to generate electromagnetic waves may further include a plurality of layers of quantum wells in a cascade manner.

[0013] In another aspect of the present disclosure, the device configured to generate electromagnetic waves may further include a plurality of layers of quantum dots in a cascade manner.

[0014] In another aspect of the present disclosure, the system may further include a power source, wherein the power source is at least one of a direct current (DC), alternating current (AC), or pulsed power source.

[0015] An aspect of the present disclosure provides a device configured to generate electromagnetic waves. The device includes a material; at least one electrode disposed along an external perimeter of the material; and a plurality of metal components periodically disposed along the material.

[0016] In another aspect of the present disclosure, the plurality of metal components may include at least one of a quantum well or a quantum dot comprised of at least one of a metal dot or a metal line.

[0017] In another aspect of the present disclosure, the device may further include a power source coupled to the at least one electrode, wherein the power source is at least one of a direct current (DC), alternating current (AC), or pulsed power source.

[0018] In yet another aspect of the present disclosure, the material may be at least one of a dielectric substance, an oxide, a piezoelectric material, a pyroelectric material, and / or a ferroelectric material.

[0019] An aspect of the present disclosure provides a method for enhancing solar panel efficiency. The method includes generating an electromagnetic field based on electromagnetic waves generated by a device configured to generate electromagnetic waves; and energizing an electron present in a lower level of a valence band of a solar panel to a top level of the valence band of the solar panel to create an additional electric charge for further excitation to a conduction band to increase a power generated from the solar cell from a first amount of power to a second amount of power, higher than the first amount of power.

[0020] In another aspect of the present disclosure, the method may further include coupling a power source to at least one electrode of the device configured to generate electromagnetic waves, wherein the power source is at least one of a direct current (DC), alternating current (AC), or pulsed power source.

[0021] In another aspect of the present disclosure, the method may further include supplying the voltage in the range of about 200V to about 500V across the device configured to generate electromagnetic waves, wherein the voltage may be lower than an avalanche breakdownvoltage of the device but high enough to sustain a current in gaps present between the plurality of metal components.

[0022] In yet another aspect of the present disclosure, the method may further include supplying the voltage from a first end portion of the device configured to generate electromagnetic waves to a second end portion of the device configured to generate electromagnetic waves.

[0023] An aspect of the present disclosure provides a device configured to generate electromagnetic waves. The device includes a first material; a first plurality of metal components periodically disposed along the first material; a second material disposed on a surface of the first material; and a second plurality of metal components periodically disposed along the second material.

[0024] In another aspect of the present disclosure, the first plurality of metal components may include at least one of a quantum well or a quantum dot comprised of at least one of a metal dot or a metal line, and wherein the second plurality of metal components may include at least one of a quantum well or a quantum dot comprised of at least one of a metal dot or a metal line.

[0025] Further details and aspects of exemplary embodiments of the present disclosure are described in more detail below with reference to the appended figures.BRIEF DESCRIPTION OF THE DRAWINGS

[0026] A better understanding of the features and advantages of the present disclosure will be obtained by reference to the following detailed description that sets forth illustrative embodiments, in which the principles of the present disclosure are utilized, and the accompanying drawings of which:

[0027] FTG. 1 is a schematic view of a system for enhancing solar panel efficiency, in accordance with examples of the present disclosure;

[0028] FIG. 2 is a schematic view of a device configured to generate electromagnetic waves, in accordance with examples of the present disclosure;

[0029] FIG. 3 is a flow chart of a method for enhancing solar panel efficiency, in accordance with examples of the present disclosure;

[0030] FIG. 4 is schematic, cross-sectional view of the device of FIG. 2, in accordance with examples of the present disclosure;

[0031] FIG. 5 is a schematic, cross-sectional view of a conduction band of a solar panel, in accordance with examples of the present disclosure;

[0032] FIG. 6 is a schematic, cross-sectional view of the conduction band of the solar panel of FIG. 5, in accordance with examples of the present disclosure;

[0033] FIG. 7 is a schematic, cross-sectional view of the conduction band of the solar panel of FIG. 5, in accordance with examples of the present disclosure;

[0034] FIG. 8 is a schematic, cross-sectional view of the conduction band of the solar panel of FIG. 5, in accordance with examples of the present disclosure;

[0035] FIG. 9 is a diagram of the electromagnetic waves generated by the device of FIG. 2, in accordance with examples of the present disclosure;

[0036] FIG. 10 is a diagram of electromagnetic waves generated by a tandem configuration of the device of FIG. 2, in accordance with examples of the present disclosure; and

[0037] FIG. 11 is a cross-sectional view of the tandem configuration of the device of FIG.2, in accordance with examples of the present disclosure.DETAILED DESCRIPTION

[0038] The present disclosure relates generally to systems and methods for enhancement of solar panel efficiency. More specifically, the present disclosure relates to the use of a device configured to generate electromagnetic waves.

[0039] Although the present disclosure will be described in terms of specific examples, it will be readily apparent to those skilled in this art that various modifications, rearrangements, and substitutions may be made without departing from the spirit of the present disclosure.

[0040] For the purpose of promoting an understanding of the principles of the present disclosure, reference will now be made to exemplary embodiments illustrated in the drawings, and specific language will be used to describe the same. It will nevertheless be understood that no limitation of the scope of the present disclosure is thereby intended. Any alterations and further modifications of the novel features illustrated herein, and any additional applications of the principles of the present disclosure as illustrated herein, which would occur to one skilled in the relevant art and having possession of this disclosure, are to be considered within the scope of the present disclosure.

[0041] Referring to FIG. 1, a system 100 for enhancing solar panel efficiency is shown. System 100 includes a device 200 configured to generate electromagnetic waves and at least one solar panel 102 including a plurality of solar cells 500. Device 200 may be configured to generate either coherent or incoherent electromagnetic waves. In various embodiments, system 100 further includes a power source 101 coupled to device 200. Power source 101 may be a direct current (DC) power source, an alternating current (AC), or a pulsed power source. At least one solar panel 102 is configured to be in communication with device 200. At least one solar panel 102 is further configured to generate an enhanced photovoltaic (PV) outagevoltage and current in response to incident radiation 103 emitted by device 200. Incident radiation 103 can provide photons that generate electrons 502 (and holes) present in at least one solar panel 102 to produce power including an output voltage and current. Furthermore, at least one solar panel 102 in conjunction with device 200, and in response to incident radiation 103, generates an enhanced photovoltaic (PV) output voltage and current. Device 200 generates high-frequency electromagnetic waves (e.g., in the terahertz (THz) range). At least one solar panel 102 is configured to include at least one semiconductor material having p-n junction formed therein (e.g., silicon, gallium nitride, gallium arsenide, indium phosphide, etc.). The semiconductor material(s) may be configured to have a band gap.

[0042] At least one solar panel 102 in conjunction with device 200 generates an enhanced PV output voltage and current through intra-band transition and reduced thermalization of electrons 502 within an energy band of a semiconductor material(s) (FIGS. 5-8). The intra- band transitions occur within a specific energy band, such as the valence band 503 or conduction band 501 of the semiconductor material. During the intra-band transition, the electrons 502 move between states within the same band without crossing the band gap between the valence band 503 and the conduction band 501. The valence band 503 contains electrons 502 in a solid material. Electrons 502 in the valence band 503 have lower energy compared to those in the conduction band 501. Energy levels within the valence band 503 are quantized but very closely spaced from one another to form a band. Predominantly, the electromagnetic wave generated by device 200 energizes the electrons 502 at a lower level of the valence band 503 to the top of the valence band 503. Furthermore, the electrons 502 at the top of the valence band 503 absorb energy from the photons in incident radiation 103 and jump to the conduction band 501 creating an additional electric charge, as shown in FIG. 6.Hence, the intra-band transitions redistribute electrons 502 within the valence band 503, such that the electrons 502 repopulate the top of the valence band 503. Electrons 502 in the top of the valence band 503 go to the conduction band 501 after absorbing photons from incident radiation 103 or, for example, sunlight. The application of electromagnetic waves generated by device 200 repopulates with electrons 502 the top of the valence band 503, making more electrons 502 available to absorb photons from sunlight, which increases the current in at least one solar panel 102. Subsequently, device 200, which is configured to generate electromagnetic waves, may be kept within proximity (e.g., a few inches to a few feet) of at least one solar panel 102 to achieve improved efficiency in at least one solar panel 102. In various embodiments, device 200 may be planer or dish shaped. Device 200 may also include high voltage bias generation or the voltage bias could be obtained directly from at least one solar panel 102 or power source 101. The electromagnetic waves may be applied to the back, front, or any angle of at least one solar panel 102. Hence, system 100 achieves optimum power generation and reduction in thermalization. In various embodiments, an array of devices 200 may be utilized to enhance power generation.

[0043] As shown in FIG. 2, device 200 includes a material 201-204, at least one electrode 206 disposed along an external perimeter of the material configured to be coupled to power source 101, and a plurality of metal components 205 periodically disposed along the material 201-204. The material 201-204 can be a dielectric substance, such as silicon nitride, which can generate electron 502 (FIG. 5) emission upon being biased. The material 201 -204 can also be an oxide allowing electrons 502 to tunnel through Fowler-Nordheim tunneling mechanisms. Further, material 201-204 may be a charge-generating material, such as piezoelectric, pyroelectric, ferroelectric, undoped, or doped oxide materials which can allowFowler-Nordheim tunneling or Pool Frenkel emission to generate a current, including hopping conduction between the plurality of metal components 205 dispersed within the material 201- 204. In various embodiments, material 201-204 may include aluminum, silicon, or glass, among other suitable materials. Silicon has an indirect band gap, meaning its valence band 503 maxima and conduction band 501 minima are not at the same crystal momentum vector (K) in the E-K diagram. The electrons 502 in the valence band 503 require energy and momentum transfer for the transition. The momentum of electrons 502 for the intra-band transition has to be conserved. This is also true for a direct band semiconductor. In the case of direct-band semiconductors, phonon (lattice vibration) interaction is not required for intra- band transition. Photons from device 200 satisfy the required energy for electron 502 in the lower levels of the valence band 503, while the momentum conservation is satisfied by electron-phonon scattering to bring electrons 502 from the lower energy levels of the valence band 503 to the top of the valence band 503, in case of indirect band semiconductors. That is, electrons 502 from the lower levels of the valence band 503 repopulate the top of valence band 503 (intra-band transition) for further excitation to the conduction band 501 by allowing more solar photons to be absorbed to generate more power.

[0044] Metal components 205 are configured to generate an electric charge upon application of a bias (e.g., voltage). Metal components 205 may be any suitable shape, such as, lines and / or dots. A bias, typically in the range of about 200V to about 500V, is applied between the plurality of metal components 205 to generate terahertz frequency electromagnetic waves. The required voltage is lower than an avalanche breakdown voltage but enough to sustain a current in gaps present between the plurality of metal components205. The current could be initiated by the Nottingham effect, increasing the probability of ion-enhanced field emission. Device 200 is biased between the starting and terminal points to generate an electric field. The mechanism for the movement of charge may be hopping conduction, such that when the charge reaches the terminal point, movement of the electric field in air occurs, generating electromagnetic waves. When a gap width “d” lies between about 5 and about 10 micron ( p), the contribution of ion enhanced field emission becomes more prominent. Electromagnetic waves are generated when an oscillating electric field generates an oscillating magnetic field which sustains the moving electric field. The oscillation of the electric field is generated by the periodicity of the electric charge reaching the terminal point due to the periodicity of the plurality of metal components 205. The charge that is generated due to Poole Frenkel emission, Fowler Nordheim tunneling, or piezoelectricity resides on metal components 205.

[0045] The plurality of metal components 205 includes at least one of a quantum well (not shown) or a quantum dot 400 comprised of at least one of a metal dot or a metal line. A quantum well is a thin structure wherein charge carriers (e.g., electrons 502) are confined in a spatial dimension and generate quantized energy levels within the dimension that is confined. Quantum wells can be fabricated by techniques such as molecular beam epitaxy or chemical vapor deposition, which allow precise control of the layer thickness and composition

[0046] Quantum well radiation has many applications in optoelectronics, such as lasers, light-emitting diodes, photodetectors, and solar cells. Quantum well radiation can also be used to study the quantum mechanical effects of charge carriers, such as excitons, coupled quantum wells, and quantum beating. The quantum well generally includes a layer of semiconductor material (e.g., gallium arsenide or aluminum gallium arsenide) that is disposed between two layers of a different semiconductor material having a larger bandgap, thereby creating a “well”in the energy landscape, serving the purpose of trapping said charge carriers within the central layer of semiconductor material.

[0047] Quantum dots 400, as illustrated in FIG. 4, may be nanoscale semiconductor structures that can confine electrons 502 and holes in three dimensions. Quantum dots 400 can also be metal quantum dots 400 or metal lines. Quantum dots 400 can be used to create electromagnetic waves with fixed phase relationship with each other to generate radiation. Quantum dots 400 can either be produced by quantum dot synthesis or by semiconductor processing techniques. Generally, the larger the quantum dots 400, the smaller the frequency, and vice versa. Multiple quantum wells or quantum dot 400 arrays may be generated by depositing aluminum over a dielectric material with wells created either by photolithographic process or using naturally occurring pores and melting the aluminum to fill these pores or holes. The dielectric material may be replaced by a ferroelectric, piezoelectric or pyroelectric material, depending upon the design and requirement for electric charge generation. Potential difference is applied between the first well (or quantum dot 400) and the last well / dot. This allows electrons 502 to jump between the wells, generating electromagnetic waves, the frequency of which would depend upon the size of quantum dots 400 or the metal line spacing. As the electromagnetic waves are generated from the quantum wells or dots 400, due to interaction between the quantum wells / dots 400, the waves generated from one well affect the other.

[0048] Tn various embodiments, synthetic quantum dots 400 fabricated by chemical processing may be utilized. These synthetic quantum dots 400 could be spun in layers in tandem or painted on a dish. When an electric field is applied, quantum dots 400 emit photons of appropriate frequencies. When the radiation is directed on at least one solar panel 102, thedevice 200 floods at least one solar panel 102 with the desired photons and enhances power production of at least one solar panel 102. Wavelengths of emitted radiation are quantum dots 400 size dependent. Smaller quantum dots 400 have large energy separation and, correspondingly, emit higher frequency radiation. The larger size quantum dots 400 have spaced energy levels and emit longer wavelength radiation. Therefore, the frequency of radiation can be tuned by selecting the size of quantum dots 400.

[0049] Radiation from quantum well walls occurs when electrons 502 or holes in a quantum well are excited by an external source, such as incident radiation 103 or an electric field, and emit photons as they relax to lower energy states. The energy and wavelength of the emitted photons depend on the size and material 201-204 of the quantum well, as well as the energy levels of the electrons 502 or holes.

[0050] Referring to FIG. 3, a method 300 for enhancing solar panel efficiency is shown. The method 300 includes generating an electromagnetic field based on the electromagnetic waves generated by device 200; and energizing electron 502 present in a lower level of a valence band 503 of at least one solar panel 102 to a top level of the valence band 503 of at least one solar panel 102 to create an additional electric charge for further excitation to a conduction band 501 to increase a power generated from a solar cell 500 (FIG. 5) from a first amount of power to a second amount of power, higher than the first amount of power. The method 300 may further include coupling a power source 101 to at least one electrode 206 of the device 200 and subsequently supplying the voltage in the range of about 200V to about 500V across the device 200. More specifically, method 300 entails supplying the voltage from a first end portion of the device 200 to a second end portion of the device 200. In various embodiments, the range of voltage supplied can vary so long as the required voltage is lowerthan an avalanche breakdown voltage but enough to sustain a current in gaps present between the plurality of metal components 205 or quantum dots 400. In various embodiments, the electromagnetic waves generated by device 200 may be coherent and / or incoherent.

[0051] FIG. 5 illustrates the distribution of electrons 502 in the valence band 503 of a semiconductor material of the solar cell 500 in response to electromagnetic waves from device 200. FIG. 5 further illustrates that the electrons 502 present in the valence band 503 absorb electromagnetic waves generated from device 200 and jump to the top of the valence band 503. These electrons 502 are further available for absorbing energy from the sunlight photons and generating more current.

[0052] FIG. 6 illustrates the distribution of electrons 502 in the valence band 503 of a semiconductor material of the solar cell 500 in response to incident radiation 103 or sunlight. FIG. 6 illustrates electrons 502 from the top of the valence band 503, which are energized by photons of incident radiation 103 or sunlight, jumping to the conduction band 501.

[0053] FIG. 7 illustrates the electrons 502 of the solar cell 500, after absorption of energy from the photons of the sunlight, that reach the conduction band 501 of a semiconductor material. FIG. 7 illustrates the electrons 502 in the higher level of the energy band, known as the conduction band 501. The electrons 502 reach the conduction band 501 due to the spare energy that the electrons 502 possess. However, the highly-energetic electrons 502 in the conduction band 501 do not have a stable quantum state, thereby the high-energetic electrons 502 jump to the bottom of the conduction band 501 , by giving away the surplus energy to the lattice. Throughout this process, at least one solar panel 102 gets heated up, and these electrons502 are known as hot electrons 502 or hot carriers. When these electrons 502 drop to thebottom of the conduction band 501 , a reduction in voltage is observed in at least one solar panel 102.

[0054] FIG. 8 illustrates the electrons 502 of the solar cell 500 at a higher level of the energy band through the absorption of electromagnetic waves generated by device 200. FIG. 8 illustrates that the electrons 502, after absorbing the energy generated by the device 200, are held at a higher level of the conduction band 501, raising the voltage of at least one solar panel 102 and reducing its temperature, a phenomena that at least one solar panel 102 would have been subjected to if the electrons 502 lost their energy to the semiconductor lattice.

[0055] Referring to FIGS. 9 and 10, diagrams of the electromagnetic waves generated by device 200 are shown. Namely, FIGS. 9 and 10 depict the formation and emission of coherent electromagnetic waves from the quantum dots 400 and / or quantum wells. Each time the electron 502 flow is interrupted at the quantum well walls, electric and magnetic fields are generated. The pulses generated because of the multiplicity of quantum wells generate traveling electromagnetic waves. As illustrated by FIGS. 9 and 10, the phases of the electromagnetic waves from the quantum wells are linked and this phase relationship generates coherent electromagnetic waves.

[0056] Referring now to FIG. 11, a tandem configuration of device 900 is shown. The plurality of metal components 205 (FIG. 2) is distributed in a plurality of tandem layers of material 201-204 (FIG. 2), or in a combination of the plurality metal components 205 and quantum dots 400 (FIG. 4), by repeating one on top of the other in the z-direction in tandem. A bias voltage is applied between a first electrode 906 and a second electrode 907. In various embodiments, device 900 may further include a plurality of alternating layers of material 201-204, forming a superlattice of quantum wells and barriers designed to confine electrons 502(FIG. 5) and generate either coherent or incoherent electromagnetic waves. The alternating layers in the cascade offer the benefit of high output power, tunable wavelength across a broad scope of spectral rangers, and enhanced reliability.

[0057] Certain embodiments of the present disclosure may include some, all, or none of the above advantages and / or one or more other advantages readily apparent to those skilled in the art from the drawings, descriptions, and claims included herein. Moreover, while specific advantages have been enumerated above, the various embodiments of the present disclosure may include all, some, or none of the enumerated advantages and / or other advantages not specifically enumerated above.

[0058] The embodiments disclosed herein are examples of the disclosure and may be embodied in various forms. For instance, although certain embodiments herein are described as separate embodiments, each of the embodiments herein may be combined with one or more of the other embodiments herein. Specific structural and functional details disclosed herein are not to be interpreted as limiting, but as a basis for the claims and as a representative basis for teaching one skilled in the art to variously employ the present disclosure in virtually any appropriately detailed structure. Like reference numerals may refer to similar or identical elements throughout the description of the figures.

[0059] The phrases “in an embodiment,” “in embodiments,” “in various embodiments,” “in some embodiments,” or “in other embodiments” may each refer to one or more of the same or different example embodiments provided in the present disclosure. A phrase in the form “A or B” means “(A), (B), or (A and B).” A phrase in the form “at least one of A, B, or C” means “(A); (B);(C); (A and B); (A and C); (B and C); or (A, B, and C).'

[0060] It should be understood that the foregoing description is only illustrative of the present disclosure. Various alternatives and modifications can be devised by those skilled in the art without departing from the disclosure. Accordingly, the present disclosure is intended to embrace all such alternatives, modifications, and variances. The embodiments described with reference to the attached drawing figures are presented only to demonstrate certain examples of the disclosure. Other elements, steps, methods, and techniques that are insubstantially different from those described above and / or in the appended claims are also intended to be within the scope of the disclosure.

Claims

WHAT IS CLAIMED IS:

1. A system for enhancing solar panel efficiency, comprising: a device configured to generate electromagnetic waves; and at least one solar panel, wherein the at least one solar panel is coupled to the device, and wherein the at least one solar panel is configured to generate an enhanced photovoltaic (PV) outage voltage and current in response to incident radiation emitted by the device.

2. The system of claim 1, wherein the device configured to generate electromagnetic waves, comprising: a material; at least one electrode disposed along an external perimeter of the material; and a plurality of metal components periodically disposed along the material.

3. The system of claim 2, wherein the plurality of metal components includes at least one of a quantum well or a quantum dot comprised of at least one of a metal dot or a metal line.

4. The system of claim 1, wherein a voltage in a range of about 200V to about 500V is applied across the device configured to generate electromagnetic waves, wherein the voltage is lower than an avalanche breakdown voltage of the device but high enough to sustain a current in gaps present between the plurality of metal components.

5. The system of claim 4, wherein the voltage is applied from a first end portion of the device configured to generate electromagnetic waves to a second end portion of the device configured to generate electromagnetic waves to generate an electromagnetic radiation.

6. The system of claim 5, wherein a charge flow of the electromagnetic radiation formed by the device configured to generate electromagnetic waves is terminated to generate electromagnetic waves.

7. The system of claim 6, wherein the electromagnetic waves are configured to energize at least one electron present in a lower level of a valence band of the at least one solar panel to a top level of the valence band of the at least one solar panel to create an additional solar output.

8. The system of claim 2, wherein the device configured to generate electromagnetic waves includes a plurality of layers of quantum wells in a cascade manner.

9. The system of claim 2, wherein the device configured to generate electromagnetic waves includes a plurality of layers of quantum dots in a cascade manner.

10. The system of claim 1, further comprising a power source, wherein the power source is at least one of a direct current (DC), alternating current (AC), or pulsed power source.11 . A device configured to generate electromagnetic waves, comprising: a material; at least one electrode disposed along an external perimeter of the material; and a plurality of metal components periodically disposed along the material.

12. The device of claim 11, wherein the plurality of metal components includes at least one of a quantum well or a quantum dot comprised of at least one of a metal dot or a metal line.

13. The device of claim 11, further comprising a power source coupled to the at least one electrode, wherein the power source is at least one of a direct current (DC), alternating current (AC), or pulsed power source.

14. The device of claim 11, wherein the material is at least one of a dielectric substance, an oxide, a piezoelectric material, a pyroelectric material, and / or a ferroelectric material.

15. A method for enhancing solar panel efficiency, the method including: generating an electromagnetic field based on electromagnetic waves generated by a device configured to generate electromagnetic waves; and energizing an electron present in a lower level of a valence band of a solar panel to a top level of the valence band of the solar panel to create an additional electric charge for further excitation to a conduction band to increase a power generated from the solar panel from a first amount of power to a second amount of power, higher than the first amount of power.

16. The method of claim 15, further comprising coupling a power source to at least one electrode of the device configured to generate electromagnetic waves, wherein the power source is at least one of a direct current (DC), alternating current (AC), or pulsed power source.

17. The method of claim 15, further comprising supplying a voltage in a range of about 200V to about 500V across the device configured to generate electromagnetic waves, wherein the voltage is lower than an avalanche breakdown voltage of the device but high enough to sustain a current in gaps present between the plurality of metal components.

18. The method of claim 17, further comprising supplying the voltage from a first end portion of the device configured to generate electromagnetic waves to a second end portion of the device configured to generate electromagnetic waves.

19. A device configured to generate electromagnetic waves, comprising: a first material; a first plurality of metal components periodically disposed along the first material; a second material disposed on a surface of the first material; and a second plurality of metal components periodically disposed along the second material.

20. The device of claim 19, wherein the first plurality of metal components includes at least one of a quantum well or a quantum dot comprised of at least one of a metal dot or a metal line, and wherein the second plurality of metal components includes at least one of a quantum well or a quantum dot comprised of at least one of a metal dot or a metal line.

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