Loading chamber and semiconductor device

Abstract

Provided in the present invention are a loading chamber and a semiconductor device. The loading chamber comprises a housing, which comprises a top wall, a bottom wall, a side wall and a closed space defined by connecting the top wall, the bottom wall and the side wall; a partition plate, which partitions the closed space in the vertical direction into a first sub-chamber and a second sub-chamber that are used for loading of substrates; and an air inlet module, which comprises an annular first air inlet that is located in the top of the first sub-chamber and used for introduction of a gas into the first sub-chamber and an annular second air inlet that is located in the top of the second sub-chamber and used for introduction of the gas into the second sub-chamber. In the loading chamber and the semiconductor device, the gas is separately introduced from the tops of the first sub-chamber and the second sub-chamber, so as to be introduced into the loading chamber from above the substrates, avoiding introducing the gas from the bottoms of the first sub-chamber and the second sub-chamber to stir up particles at the bottoms and contaminate the substrates. In addition, the gas is introduced from the peripheries of the tops of the first sub-chamber and the second sub-chamber during vacuum breaking.

Description

Load chamber and semiconductor equipment Technical Field

[0001] The invention belongs to the technical field of semiconductors and relates to a loading chamber and semiconductor equipment. Background Art

[0002] During the semiconductor manufacturing process, substrates are loaded into a loading chamber, and the internal environment of the loading chamber is switched between vacuum and atmosphere through vacuum pumping and breaking. The loading chamber is located between the front-end chamber and the process chamber and is generally two-layered. The lower layer is used to receive and load substrates that have not undergone semiconductor processing from the front-end chamber, and the upper layer is used to receive and load substrates that have undergone semiconductor processing from the process chamber. Currently, when the loading chamber is directly vacuumed and broken through the air pump port (also known as the exhaust port) and the air inlet port, it is easy to cause vibration of the substrate. In addition, when the loading chamber is broken through the vacuum, the gas directly introduced into the loading chamber from the air inlet creates turbulence, which can lift up contaminant particles in the loading chamber and contaminate the substrate.

[0003] Therefore, it is necessary to provide a new loading chamber and semiconductor equipment. Summary of the Invention

[0004] In order to solve the problems existing in the prior art, an object of the present invention is to provide a loading chamber and a semiconductor device, which are used to solve the problem in the prior art that particles in the loading chamber are blown up and contaminate the substrate.

[0005] To achieve the above and other related objectives, one aspect of the present invention provides a loading chamber, comprising:

[0006] The housing comprises a top wall, a bottom wall, a side wall and a closed space formed by the top wall, the bottom wall and the side wall;

[0007] a partition, dividing the enclosed space in a vertical direction into a first sub-chamber and a second sub-chamber for loading substrates;

[0008] an air inlet module, comprising first air inlets located at the top of the first sub-chamber and arranged in a circle for introducing gas into the first sub-chamber, and second air inlets located at the top of the second sub-chamber and arranged in a circle for introducing gas into the second sub-chamber, wherein the first air inlet and the second air inlet are connected to a gas supply device via an air inlet channel provided in the side wall, and in a horizontal projection plane of the loading chamber, the first air inlet and the second air inlet both surround the periphery of the substrate;

[0009] The exhaust module comprises a first exhaust port and a second exhaust port for respectively exhausting the gas in the first sub-chamber and the second sub-chamber, and the first exhaust port and the second exhaust port are connected to the exhaust device.

[0010] Optionally, the loading chamber further includes a partition support member formed by a circle of inward protrusion from the inner surface of the side wall and used to support the partition.

[0011] Optionally, the first exhaust port is an annular through hole penetrating the upper and lower surfaces of the partition, and the annular through hole is arranged opposite to the partition support member.

[0012] Optionally, a gap is left between the partition and the side wall, and the gas in the first sub-chamber enters the first exhaust port through the gap and is then exhausted.

[0013] Optionally, the second air inlet is arranged at a position where the lower surface of the partition contacts the inner edge of the partition support.

[0014] Optionally, a sealing ring is further included between the first exhaust port and the second air inlet.

[0015] Optionally, the second exhaust port is located at the bottom of the second sub-chamber, and the loading chamber further includes a gas distribution plate located between the substrate and the second exhaust port.

[0016] Optionally, the gas uniforming disk is adapted to be aligned with the substrate, and the diameter of the gas uniforming disk is larger than the diameter of the substrate, and a gap is left between the gas uniforming disk and the inner surface of the side wall, the gap allowing the gas in the second sub-chamber to pass through the gap into the second exhaust port and then be discharged.

[0017] Optionally, the first air inlet is arranged at a position where the lower surface of the top wall contacts the inner edge of the side wall.

[0018] Optionally, the loading chamber further includes a circle of first air guide portions extending downwardly from the top wall, and the first air guide portions are closer to the center of the loading chamber than the first air inlet.

[0019] Optionally, the loading chamber further includes a circle of second air guide portions formed by downward extension of the partition plate, and the second air guide portions are closer to the center of the loading chamber than the second air inlet.

[0020] Optionally, the air inlet channel includes a first air inlet channel connected to the first air inlet port and a second air inlet channel connected to the second air inlet port, the side wall has a first side wall portion located in the first sub-chamber and a second side wall portion located in the second sub-chamber, the first air inlet channel penetrates the first side wall portion and the second side wall portion in the vertical direction, and the second air inlet channel penetrates the second side wall portion in the vertical direction.

[0021] Optionally, the exhaust module includes a first exhaust channel connected to the first exhaust port, the side wall has a second side wall portion located in the second sub-chamber, and the first exhaust channel vertically penetrates the second side wall portion.

[0022] Optionally, the air inlets of the first air inlet channel and the second air inlet channel are both arranged on the bottom wall, and the air supply device supplies gas to the first sub-chamber and the second sub-chamber respectively through the air inlet.

[0023] Optionally, the air outlet of the first exhaust channel is arranged on the bottom wall, and the air extraction device extracts the gas in the first sub-chamber through the air outlet.

[0024] Another aspect of the present invention provides a semiconductor device, comprising a loading chamber, a process chamber, and a process robot for transferring substrates between the loading chamber and the process chamber, wherein the loading chamber is any one of the loading chambers described above.

[0025] Optionally, the process chamber includes three substrate supports and an entrance for transferring substrates into the process chamber, the three substrate supports are arranged in an inverted triangle, one substrate support is closer to the entrance than the other two substrate supports, and the other two substrate supports are at the same distance from the entrance.

[0026] As described above, the loading chamber and semiconductor equipment of the present invention respectively introduce gas into the top of the first sub-chamber and the second sub-chamber so that the gas is introduced into the loading chamber from above the substrate, thereby avoiding the gas from being introduced from the bottom of the first sub-chamber and the second sub-chamber and raising particles at the bottom to contaminate the substrate; and when breaking the vacuum, the gas is introduced from the first air inlet and the second air inlet arranged in a circle at the top of the first sub-chamber and the second sub-chamber, and when vacuuming, the gas is discharged from a circle at the bottom of the first sub-chamber and the second sub-chamber, so that the gas flow is more uniform and stable, thereby avoiding the gas directly entering and exiting the first sub-chamber and the second sub-chamber from the air inlet and the air outlet when breaking the vacuum and vacuuming the first sub-chamber and the second sub-chamber, resulting in uneven gas flow and causing vibration of the loaded substrates in the first sub-chamber and the second sub-chamber.

[0027] Summary of the Figures

[0028] The features and properties of the present invention are further described by the following examples and accompanying drawings.

[0029] FIG1 is a schematic structural diagram of a loading chamber according to an embodiment of the present invention.

[0030] FIG2 is a cross-sectional view and a partially enlarged view of the cross section of the loading chamber in the AA direction in FIG1 .

[0031] FIG3 is another cross-sectional view and a partially enlarged view of the loading chamber in FIG1 .

[0032] FIG4 is a schematic structural diagram of the partition in FIG1 .

[0033] FIG5 is a schematic diagram of a partial structure of the loading chamber in FIG1 .

[0034] FIG. 6 is another schematic structural diagram of the loading chamber in FIG. 1 .

[0035] FIG7 is a schematic structural diagram of a semiconductor device according to an embodiment of the present invention.

[0036] Preferred embodiments of the present invention

[0037] The following describes the embodiments of the present invention through specific examples. Those skilled in the art will readily understand the other advantages and benefits of the present invention from the disclosure herein. The present invention may also be implemented or applied through various other specific embodiments, and the details in this specification may be modified or altered based on different viewpoints and applications without departing from the spirit of the present invention.

[0038] For example, when describing the embodiments of the present invention, cross-sectional views of device structures may be partially enlarged to scale for ease of explanation. Furthermore, these schematic views are merely illustrative and should not limit the scope of the present invention. Furthermore, in actual manufacturing, three-dimensional dimensions, including length, width, and depth, should be included.

[0039] For ease of description, spatially relative terms such as "under," "beneath," "lower," "below," "below," "above," "upper," and the like may be used herein to describe the relationship of one element or feature shown in the drawings to other elements or features. It will be understood that these spatially relative terms are intended to encompass orientations of the device in use or operation in addition to the orientation depicted in the drawings. Additionally, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present. As used herein, "between" is inclusive of both endpoints.

[0040] In the context of the present application, a structure described as a first feature being "above" a second feature may include embodiments where the first and second features are formed in direct contact, and may also include embodiments where an additional feature is formed between the first and second features, such that the first and second features may not be in direct contact.

[0041] It should be noted that the illustrations provided in this embodiment are only used to schematically illustrate the basic concept of the present invention. Therefore, the illustrations only show components related to the present invention and are not drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component can be changed at will, and the component layout type may also be more complicated.

[0042] As shown in Figures 1 and 2, this embodiment provides a loading chamber comprising a housing 1, a partition 2, and a carrier 3 located within the housing 1. The partition 2 divides the enclosed space 14 within the housing 1 into a first sub-chamber 141 and a second sub-chamber 142. Both the first sub-chamber 141 and the second sub-chamber 142 contain carriers 3 for supporting substrates W. Multiple substrates W are horizontally arranged at specific intervals along the height of the carriers 3.

[0043] The housing 1 includes a bottom wall 11 at its bottom, a top wall 12 at its top, side walls 13 connecting the bottom and top walls 11 and 12, and an enclosed space 14 formed by the interconnected bottom wall 11, top wall 12, and side walls 13. Preferably, in one embodiment, the top wall 12 can be removably connected to the side walls 13 as a cover, thereby forming the enclosed space 14 with the side walls 13 and bottom wall 11. The removable structure of the top wall 12 facilitates installation and maintenance of the internal structures of the housing 1 (e.g., the support frame, the aeration plate described below, and the partition) after the cover is opened. Since the housing 1 is airtight, an observation window 131 is provided on the side wall 13 to facilitate observation of the substrates W within the housing 1. Furthermore, the inner surface of the side wall 13 protrudes inward to form a partition support portion 5 for mounting the partition 2. The partition 2 is removably mounted to the partition support portion 5. For example, in one embodiment, the partition 2 is mounted to the partition support portion 5 using fasteners (e.g., screws).

[0044] The loading chamber also includes an air intake module and an exhaust module.

[0045] As shown in FIG. 2 , the air inlet module includes a first air inlet 7011 and a second air inlet 7021 for introducing gas (eg, nitrogen when breaking vacuum) into the first sub-chamber 141 and the second sub-chamber 142 , respectively.

[0046] The first air inlets 7011 are located at the top of the first sub-chamber 141 and are arranged in a circle. It is understandable that the top wall 12 of the housing 1 can serve as the top of the first sub-chamber 141. Exemplarily, in one embodiment, the first air inlets 7011 are located at the position where the lower surface of the cover 12 contacts the inner edge of the side wall 13. Preferably, the first air inlets 7011 are formed on the contact surface of the cover 12. It is more convenient to form a circle of first air inlets 7011 on the cover 12 than on the side wall 13. Here, the first air inlets 7011 are arranged in a circle at the top of the first sub-chamber 141 and are located above the substrate W to prevent particles at the bottom of the first sub-chamber 141 from being blown up and contaminating the substrate W. Preferably, in one embodiment, the first air inlets 7011 are located above the outer periphery of the substrate W. Specifically, on the horizontal projection surface of the loading chamber in FIG. 1 , the first air inlets 7011 surround the outer periphery of the substrate. When the vacuum is broken, the gas enters the first sub-chamber 141 from the first air inlet 7011 located at the top edge of the first sub-chamber 141. The side wall 13 includes a first side wall portion 132 located in the first sub-chamber 141 and a second side wall portion 134 located in the second sub-chamber 142. The air intake module also includes a first air intake channel 7013 connected to the first air inlet 7011. Exemplarily, referring to Figure 5 and in combination with Figure 6, the first air intake channel 7013 vertically penetrates the first side wall portion 132 and the second side wall portion 134 and extends to the bottom wall 14. The first air intake inlet 711 of the first air intake channel 7013 is formed on the bottom wall 14, and the first air intake inlet 711 is connected to the air supply device. It can be understood that the first air intake channel 7013 penetrates the side wall 13 located in the first sub-chamber 141 and the second sub-chamber 142.

[0047] Referring to Figure 2 in conjunction with Figure 4 , the second air inlets 7021 are located on the lower surface of the edge 21 of the partition 2 and arranged in a circle (understandably, they are also arranged in a circle at the top of the second sub-chamber 142). Specifically, they are located where the lower surface of the edge 21 of the partition 2 contacts the inner edge of the partition support portion 5. Preferably, in one embodiment, the second air inlets 7021 are located on the partition 2, as processing on the partition 2 is more convenient than processing on the partition support portion 5. It is understood that the second air inlets 7021 are provided in a circle at the top of the second sub-chamber 142 and above the substrates W in the second sub-chamber 142, preventing particles from the bottom of the second sub-chamber 142 from being lifted and contaminating the substrates W. Preferably, the second air inlets 7021 are located above the periphery of the substrates W. Specifically, in the horizontal projection of the loading chamber in Figure 1 , the second air inlets 7021 surround the periphery of the substrates W. When the vacuum is broken, gas enters the second sub-chamber 142 from the second gas inlet 7021 located at the top edge of the second sub-chamber 142 .

[0048] The air intake module also includes a second air intake channel 7023 connected to the second air intake port 7021. Exemplarily, referring to FIG. 5 and in combination with FIG. 6 , the second air intake channel 7023 vertically penetrates the protrusion 136 extending from the second side wall portion 134 into the second sub-chamber 142 and extends through the bottom wall 11 of the housing 1 to form a second air intake inlet 712 of the second air intake channel 7023, and the protrusion 136 extends in the vertical direction of the loading chamber. It can be understood that the second air intake channel 7023 penetrates the protrusion 136 located in the second sub-chamber 142. Referring to FIG. 5 , the second air intake channel 7023 is closer to the center of the loading chamber than the first air intake channel 7013. When breaking the vacuum, referring to FIG. 5 and in combination with FIG. 6 , the air supply device introduces gas into the first sub-chamber 141 and the second sub-chamber 142 through the first air intake inlet 711 and the second air intake inlet 712, respectively. Specifically, gas in the gas supply device flows from the first air inlet 711 through the first air inlet channel 7013 and the first air inlet 7011 into the first sub-chamber 141. Simultaneously, gas flows from the second air inlet 712 through the second air inlet channel 7023 and the second air inlet 7021 into the second sub-chamber 142. The loading chamber also includes a guide portion 9, which includes a first guide portion 91 located within the first sub-chamber 141 and a second guide portion 92 located within the second sub-chamber 412. For example, referring to FIG. 2 , the first guide portion 91 is formed by a circle extending downward from the lower surface of the top wall 12. The first air inlet 7011 is arranged around the first guide portion 91 (it is understood that the first guide portion 91 is closer to the center of the loading chamber than the first air inlet 7011). When gas flows out of the first air inlet 7011, the gas flows downward under the action of the first guide portion 91. The second guide portion 92 is formed by a circle protruding downward from the lower surface of the partition 2. The second air inlet 7021 is arranged around the second guide portion 92 (it will be understood that the second guide portion 92 is closer to the center of the loading chamber than the second air inlet 7021). When gas flows out of the second air inlet 7021, the gas flows downward under the action of the second guide portion 92. The first guide portion 91 and the second guide portion 92 guide the gas downward. In addition, in the above embodiment, the first air inlet 7011 and the second air inlet 7021 are located above the periphery of the substrate W. Specifically, in the horizontal projection of the loading chamber in Figure 1, the first air inlet 7011 and the second air inlet 7021 both surround the periphery of the substrate W, preventing gas from flowing out from around the top of the first sub-chamber 141 and the second sub-chamber 142 and blowing directly onto the substrate W, affecting the properties of the substrate W. For example, a substrate W that has just undergone thin film deposition is still very hot. If gas blown directly onto the substrate W, the properties of the film on the substrate W surface will be affected.

[0049] 2 , the exhaust module includes a first exhaust port 7012 and a second exhaust port 722 .

[0050] The first exhaust ports 7012 are located at the edge 21 of the partition 2 and are arranged in a circle (it is understandable that they are also arranged in a circle at the bottom of the first sub-chamber 141). They can be formed through the upper and lower surfaces of the partition 2 or formed on the lower surface of the edge 21 of the partition 2. In one embodiment, the first exhaust ports 7012 are annular through holes that penetrate the upper and lower surfaces of the partition 2 and are arranged opposite to the partition support 5. Here, when vacuuming, the gas is exhausted from the annular through hole. In another embodiment, the first exhaust ports 7012 are formed on the lower surface of the edge 21 of the partition 2, leaving a gap between the outer periphery of the partition 2 and the inner surface of the side wall 13. Here, when vacuuming, the gas is discharged from the first exhaust ports 7012 located in a circle at the bottom of the first sub-chamber 141 through the gap between the outer periphery of the partition 2 and the inner surface of the side wall 13 into the first sub-chamber 141.

[0051] The exhaust module also includes a first exhaust channel 7014 in communication with the first exhaust port 7012. For example, referring to FIG. 5 in conjunction with FIG. 6 , the first exhaust channel 7014 vertically penetrates the sidewall 13 and communicates with the exhaust duct 731 located below the bottom of the housing 1 in FIG. 6 . It will be appreciated that the first exhaust port 7012 penetrates the sidewall 13 located in the second sub-chamber 142.

[0052] 2 , the second exhaust port 722 is located on the bottom wall 11 (understandably, also the bottom of the second sub-chamber 142 ) and passes through the upper and lower surfaces of the bottom wall 11 . The second exhaust port 722 is connected to the exhaust pipe 732 and is connected to the exhaust device through the exhaust pipe 732 .

[0053] The exhaust device communicates with the exhaust ducts 731 and 732 below the bottom wall 11 of the housing 1 and exhausts the first and second sub-chambers 141 and 142, respectively. In addition to the exhaust ducts 731 and 732, other ducts, valves, and detection elements are located below the bottom wall 11 of the housing 1. Centrally installing these ducts, valves, and detection elements below the bottom wall prevents accidental damage to these ducts, valves, and detection elements during operation and enhances the aesthetics of the loading chamber. It will be appreciated that, for centralized installation, the gas supply device also connects to the first and second gas inlets 711 and 712 via ducts below the bottom wall of the housing 1 and supplies gas to the first and second sub-chambers 141 and 142.

[0054] With reference to Figure 4, the second air inlet 7021 and the first air outlet 7012 are both located on the lower surface of the edge 21 of the partition 2. Exemplarily, the first air outlet 7012 is located at the first edge position 211 of the partition 2, and the second air inlet 7021 is located at the second edge position 212 of the partition 2. The first edge position 211 is farther from the center of the partition 2 than the second edge position 212. Exemplarily, in one embodiment, the first air outlet 7012 is formed by the lower surface of the edge 21 of the partition 2 being recessed into the partition 2, and a gap is left between the outer periphery of the edge of the partition 2 and the side wall 13 located in the first sub-chamber 141. The gas in the first sub-chamber 141 enters the first air outlet 7012 from the gap and is discharged from the first sub-chamber 141. At this time, the outer periphery of the partition 2 has a diversion function, and the gas in the first sub-chamber 141 enters the first air outlet 7012 located on the lower surface of the partition 2 from the outer periphery of the partition 2. The partition 2 is fixedly connected to the partition support 5 (see Figure 2), with a sealing ring 4 (see Figure 2) installed between the two to separate the first sub-chamber 141 from the second sub-chamber 142. Referring to Figure 5 in conjunction with Figure 2, the sealing ring 4 is located in the groove 41. It will be understood that the diameter of the sealing ring 4 is larger than the diameter of the groove 41. In addition, referring to Figure 2, the sealing ring 4 is also located on the lower surface of the edge 21 of the partition 2, between the first exhaust port 7012 and the second inlet port 7021, to separate and seal the first sub-chamber 141 from the second sub-chamber 142.

[0055] In order to reduce the volume of the loading chamber, the first air inlet channel 7013, the second air inlet channel 7023 and the first exhaust channel 7014 are arranged at the connection between two adjacent side walls of the square loading chamber.

[0056] As shown in FIG3 , a uniform gas plate 6 is further disposed between the substrate W and the exhaust port 722 within the second sub-chamber 142. The center of the exhaust port 722 is aligned with the center of the uniform gas plate 6. Gas within the second sub-chamber 142 enters the exhaust port 722 through the gap between the outer periphery of the uniform gas plate 6 and the inner surface of the sidewall 13 of the second sub-chamber 142. Preferably, the diameter of the uniform gas plate 6 is larger than the diameter of the substrate W to prevent direct suction on the substrate W and vibration of the substrate W.

[0057] In an embodiment of the present invention, when breaking the vacuum, the gas enters from around the top of the first sub-chamber 141 and the second sub-chamber 142. When drawing the vacuum, the gas is discharged from around the bottom of the first sub-chamber 141 and the second sub-chamber 142, thereby preventing the gas from directly blowing toward the substrate W and sucking the substrate W.

[0058] In the present invention, there is no limitation on the number of substrates W in the first sub-chamber 141 and the second sub-chamber 142 , and each of the first sub-chamber 141 and the second sub-chamber 142 can be loaded with 3 or 6 substrates, or other numbers of substrates W can be loaded.

[0059] Referring to Figure 7 , one embodiment of the present invention further provides a semiconductor device comprising a loading chamber 101, a process robot 102, and multiple process chambers 103. As previously described, the loading chamber 101 comprises a first sub-chamber 141 and a second sub-chamber 142. One of the first sub-chamber 141 and the second sub-chamber 142 is used to load unprocessed substrates W, and the other is used to load processed substrates W. The process chamber 103 can perform semiconductor processing on the substrates W, such as thin film deposition or other semiconductor processing on the surface of the substrates W within the process chamber 103, without limitation. The multiple process chambers 103 can perform the same semiconductor process on the substrates W, or different semiconductor processes, without limitation. Three substrate supports are provided within the process chamber 103. The three substrate supports are arranged in an inverted triangle configuration within the process chamber 103, with the first substrate support 104a being closer to the entrance 103a of the process chamber 103 than the second substrate support 104b and the third substrate support 104c. A rotation mechanism 105 is located in the center of the three substrate supports. The rotation mechanism 105 includes multiple ends each formed with a loop, hook, fork, or other design for engaging a substrate W. The rotation mechanism 105 rotates to engage a substrate W and transfer the engaged substrate W between the multiple substrate supports. The process robot 102 transfers substrates W between the process chamber 103 and the loading chamber 101. Specifically, the process robot 102 transfers unprocessed substrates W from the loading chamber 101 to the process chamber 103 and transfers processed substrates W to the loading chamber 101.

[0060] For more details of the semiconductor device provided by the present invention, please refer to the above description of the loading chamber, which will not be elaborated here.

[0061] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the present invention. Anyone skilled in the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by one of ordinary skill in the art without departing from the spirit and technical principles disclosed herein are intended to be covered by the claims of the present invention.

Claims

1. A loading chamber, characterized in that: include: The housing comprises a top wall, a bottom wall, a side wall and a closed space formed by the top wall, the bottom wall and the side wall; a partition, dividing the enclosed space in a vertical direction into a first sub-chamber and a second sub-chamber for loading substrates; an air inlet module, comprising first air inlets located at the top of the first sub-chamber and arranged in a circle for introducing gas into the first sub-chamber, and second air inlets located at the top of the second sub-chamber and arranged in a circle for introducing gas into the second sub-chamber, wherein the first air inlet and the second air inlet are connected to the air supply device via an air inlet channel provided in the side wall, and in a horizontal projection plane of the loading chamber, the first air inlet and the second air inlet both surround the periphery of the substrate; The exhaust module comprises a first exhaust port and a second exhaust port for respectively exhausting the gas in the first sub-chamber and the second sub-chamber, and the first exhaust port and the second exhaust port are connected to the exhaust device.

2. The loading chamber according to claim 1, characterized in that: The loading chamber further includes a partition support member formed by an inner surface of the side wall protruding inwardly for supporting the partition.

3. The loading chamber according to claim 2, characterized in that: The first exhaust port is an annular through hole that passes through the upper and lower surfaces of the partition, and the annular through hole is arranged opposite to the partition support member.

4. The loading chamber according to claim 2, characterized in that: A gap is left between the partition plate and the side wall, and the gas in the first sub-chamber enters the first exhaust port through the gap and is then exhausted.

5. The loading chamber according to claim 4, characterized in that: The second air inlet is provided at a position where the lower surface of the partition contacts the inner edge of the partition support.

6. The loading chamber according to claim 5, characterized in that: It also includes a sealing ring arranged between the first exhaust port and the second air inlet.

7. The loading chamber according to claim 1, characterized in that The second exhaust port is located at the bottom of the second sub-chamber, and the loading chamber further includes a gas distribution plate located between the substrate and the second exhaust port.

8. The loading chamber according to claim 7, characterized in that: The gas distribution disk is suitable for being arranged in alignment with the substrate, and the diameter of the gas distribution disk is larger than the diameter of the substrate, and a gap is left between the gas distribution disk and the inner surface of the side wall, and the gap allows the gas in the second sub-chamber to pass through the gap into the second exhaust port and then be discharged.

9. The loading chamber according to claim 1, characterized in that The first air inlet is arranged at a position where the lower surface of the top wall contacts the inner edge of the side wall.

10. The loading chamber according to claim 1, wherein: The loading chamber further includes a circle of first air guide portions extending downwardly from the top wall. The first air guide portions are closer to the center of the loading chamber than the first air inlet.

11. The loading chamber according to claim 1, wherein: The loading chamber further includes a circle of second air guide portions formed by downwardly extending the partition plate. The second air guide portions are closer to the center of the loading chamber than the second air inlet.

12. The loading chamber according to claim 1, wherein: The air intake channel includes a first air intake channel connected to the first air inlet port and a second air intake channel connected to the second air inlet port. The side wall has a first side wall portion located in the first sub-chamber and a second side wall portion located in the second sub-chamber. The first air intake channel penetrates the first side wall portion and the second side wall portion in a vertical direction, and the second air intake channel penetrates the second side wall portion in a vertical direction.

13. The loading chamber according to claim 1, wherein: The exhaust module includes a first exhaust channel communicating with the first exhaust port, the side wall includes a second side wall portion located in the second sub-chamber, and the first exhaust channel vertically penetrates the second side wall portion.

14. The loading chamber according to claim 1, wherein: The air inlets of the first air inlet channel and the second air inlet channel are both arranged on the bottom wall, and the air supply device supplies gas to the first sub-chamber and the second sub-chamber respectively through the air inlet.

15. The loading chamber according to claim 12, wherein: The air outlet of the first exhaust channel is arranged on the bottom wall, and the air extraction device extracts the gas in the first sub-chamber through the air outlet.

16. A semiconductor device comprising a loading chamber, a process chamber, and a process robot for transferring a substrate between the loading chamber and the process chamber, wherein: The loading chamber is the loading chamber according to any one of claims 1 to 15.

17. The semiconductor device according to claim 16, wherein: The process chamber includes three substrate supports and an entrance for transferring substrates into the process chamber. The three substrate supports are arranged in an inverted triangle, one of the substrate supports is closer to the entrance than the other two substrate supports, and the other two substrate supports are at the same distance from the entrance.

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