Optoelectronic component, and method for the production of an optoelectronic component

Abstract

The invention relates to an optoelectronic component (22) comprising at least one module having a plurality of optoelectronic assemblies (1). Each optoelectronic assembly (1) comprises a substrate (2) having an upper face (3) and a lower face (4) opposite the upper face (3), and an optoelectronic semiconductor chip (12) which is situated on the upper face (3) of the substrate (2) and is designed to emit electromagnetic radiation on an emission surface (13) that faces away from the upper face (3). The optoelectronic assemblies (1) are arranged laterally one next to the other and are mechanically interconnected by means of at least one connecting element (23, 24, 25, 26, 27, 42).

Description

[0001] OPTOELECTRONIC COMPONENT AND METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT

[0002] DESCRIPTION

[0003] The present invention relates to an optoelectronic component and a method for producing an optoelectronic component.

[0004] This patent application claims priority from German patent application DE 10 2024 108 981 . 4 , the disclosure of which is hereby incorporated by reference.

[0005] Motor vehicles with so-called ADB headlights (adaptive driving beam, ADB for short) are known from the state of the art, which are designed to ensure improved illumination of a roadway and at the same time darken an area of ​​oncoming traffic to avoid glare (adaptive high beam).

[0006] Currently, various approaches are known for implementing an ADB module. For example, ADB modules with discrete chip packages (chip scale packages, or CSPs) are known. In this case, the chip packages must be arranged very close to one another during the production of an ADB headlight, since the design of a CSP always results in a certain distance between the luminous surfaces, which is usually larger than typical distances between surface-mounted chips (SMTs).

[0007] The smallest possible spacing is counteracted by the fact that in the case of a CSP the chip is embedded in a housing material using FAM (film-assisted molding), a variation of transfer molding, which means that the housing walls have a significant thickness parallel to the luminous surface. Due to the lateral distances between the luminous surfaces of discrete chips, complex optics may be required to create a coherent light pattern, for example a trunk optic. In addition, arranging and soldering discrete chips at close intervals requires more complex and cost-intensive techniques that may not be available.

[0008] Furthermore, ADB headlights with an integrated circuit (IC) and an LED chip (light-emitting diodes, LEDs) arranged on the integrated circuit are known from the prior art. This allows for smaller spacing, a homogeneous illuminated area, and high resolution. Such approaches also enable simpler optical systems, but are rather cost-intensive, since a correspondingly large IC and LED chip must be provided for each illuminated area size.

[0009] An object of the present invention is to provide an improved optoelectronic component and to specify an improved method for producing an optoelectronic component. This object is achieved by an optoelectronic component and a method for producing an optoelectronic component having the features of the respective independent claims. Advantageous further developments are specified in the dependent claims.

[0010] An optoelectronic component comprises at least one module with a plurality of optoelectronic arrangements. Each optoelectronic arrangement comprises a substrate having a top side and a bottom side opposite the top side, and an optoelectronic semiconductor chip arranged on the top side of the substrate and configured to emit electromagnetic radiation at an emission surface facing away from the top side. The optoelectronic arrangements are arranged laterally adjacent to one another and mechanically connected to one another by means of at least one connecting element.The optoelectronic component is based on the idea of ​​providing a module comprising a plurality of optoelectronic arrangements, which can also be referred to as image points or pixels. The pixels are not implemented together on a carrier, but are initially manufactured separately and subsequently assembled into the module using connecting elements and permanently mechanically connected to one another. The module can also be referred to as a module of pixels or as an LED module if the optoelectronic semiconductor chips are designed, for example, as LEDs. For example, a module can have a total of twenty-four pixels.

[0011] The optoelectronic component advantageously addresses the problem of placement accuracy of the individual pixels, as prefabricated modules can be used to construct larger arrays in which the pixels are already arranged at small intervals from one another. Since the use of modules eliminates the need to arrange the individual pixels at close intervals, manufacturing costs can also be saved. An optoelectronic component with multiple modules can, for example, be designed as an ADB headlight. In this case, the modules can also be referred to as ADB modules.

[0012] The pixels can be tested separately before being connected using the connecting elements to ensure proper operation. This can prevent significant yield losses. This can be explained by the fact that individual yield losses of individual pixels within an array are exponentially higher than for pixels manufactured simultaneously within a component.

[0013] In one embodiment, a first upper and a second upper contact surface are arranged on the upper sides of the substrates. The optoelectronic semiconductor chips are each arranged on the first upper contact surfaces and electrically connected to them. A plurality of first leadframe sections form the connecting elements. The first upper and second upper contact surfaces of immediately adjacent optoelectronic arrangements are mechanically and electrically connected to one another by means of the first leadframe sections.

[0014] During the manufacture of the optoelectronic component, the optoelectronic components can first be arranged on a temporary carrier and then mechanically and electrically connected to the first leadframe sections. The temporary carrier can then be removed.

[0015] In one embodiment, the first leadframe sections are embedded in a molding material arranged on the upper sides of the substrates and are exposed on a side facing away from the upper sides of the substrates. The molding material extends between the optoelectronic arrangements and mechanically connects them to one another. Advantageously, in this variant, a module can be electrically contacted at the exposed surfaces of the first leadframe sections. The first leadframe sections can also be referred to as leadframe strips. The molding material advantageously offers protection against short circuits. However, the first leadframe sections do not necessarily have to be embedded in the molding material.

[0016] In one embodiment, an integrated circuit is arranged in the region above the first leadframe sections with respect to the upper sides of the substrates. The integrated circuit can be designed, for example, as a driver circuit for the optoelectronic arrangement or module. Alternatively or additionally, the integrated circuit can have a data bus.

[0017] In one embodiment, the substrates each have a first upper and a second upper contact surface on their upper sides. The optoelectronic semiconductor chips are each arranged on the first upper contact surfaces and electrically connected to them. The optoelectronic arrangements are arranged laterally adjacent to one another with the undersides of the substrates on a further substrate. The further substrate forms a connecting element that at least mechanically connects the optoelectronic arrangements to one another.

[0018] In one embodiment, the substrates each have a first upper and a second upper contact surface on their upper sides and a first lower and a second lower contact surface on their lower sides. The first upper contact surfaces are each electrically connected to the first lower contact surfaces and the second upper contact surfaces are each electrically connected to the second lower contact surfaces. The further substrate is formed by a lead frame substrate. The lead frame substrate has a further molding material arranged on the lower sides of the substrates, a plurality of second lead frame sections and a third lead frame section. The second lead frame sections and the third lead frame section are exposed on a side facing the lower sides of the substrates and the third lead frame section is exposed on a side facing away from the lower sides of the substrates.The optoelectronic semiconductor chips are arranged in the region above the third leadframe section. First lower and second lower contact surfaces of immediately adjacent optoelectronic arrangements are mechanically and electrically connected to one another by means of the second leadframe sections.

[0019] Advantageously, the second leadframe sections can form contact surfaces for the module facing the undersides of the substrates. Furthermore, the optoelectronic semiconductor chips can be electrically connected to one another via the common third leadframe section. The third leadframe section forms a connected thermal path for all optoelectronic semiconductor chips of the module, thereby significantly improving heat dissipation during operation of the optoelectronic semiconductor chips compared to separate thermal sinks. During production of the optoelectronic component, the optoelectronic arrangements are arranged on the second and third leadframe sections, which are embedded in the further molding material, and are mechanically and electrically connected to them. The connecting element or the further substrate in this case comprises the second and third leadframe sections and the further molding material.However, in one embodiment the additional molding material may also be omitted.

[0020] In one embodiment, the second leadframe sections are each exposed on a side facing away from the undersides of the substrates. Advantageously, the second leadframe sections form additional contact surfaces for the module facing away from the undersides of the substrates. The third leadframe section can be exposed on the side facing away from the undersides of the substrates, regardless of whether the second leadframe sections are exposed on this side or not.

[0021] In one embodiment, a contact pad is arranged on each of the emission surfaces of the optoelectronic semiconductor chips. The contact pads are each connected to a second upper contact surface by means of a bonding wire. The contact pad can also be referred to as an upper contact pad. The optoelectronic semiconductor chips can have a lower contact pad on their mounting surfaces facing away from the emission surfaces. The lower contact pad is arranged on the first upper contact surface. A solder material is arranged between the first upper contact surface and the lower contact pad and mechanically and electrically connects the optoelectronic semiconductor chips to the first upper contact surfaces.

[0022] In one embodiment, the bonding wires are each embedded in an encapsulation arranged on the upper sides of the substrates and partly on the emission surfaces of the optoelectronic semiconductor chips.

[0023] In one embodiment, the first and second upper contact surfaces are each embedded in the encapsulation or are each at least partially exposed. If the first and second upper contact surfaces are at least partially exposed and are each not embedded in the encapsulations, they can be connected to one another by means of the first leadframe sections. This also makes it possible to arrange the integrated circuit over the first leadframe sections if no encapsulation is provided in these areas.

[0024] In one embodiment, the optoelectronic arrangements are embedded in an additional encapsulation. The emission surfaces of the optoelectronic semiconductor chips or surfaces facing away from the emission surfaces of a wavelength-converting material arranged on the emission surfaces are each exposed. This advantageously protects the entire optoelectronic arrangement mechanically and against dust and moisture. If lower contact surfaces are provided that are electrically connected to the upper contact surfaces, the lower contact surfaces are exposed and are not covered by the additional encapsulation.

[0025] In one embodiment, the optoelectronic semiconductor chips each have mounting surfaces opposite their emission surfaces and side facets each extending between the mounting surfaces and the emission surfaces. The substrates each have side surfaces extending between their undersides and their top sides. The optoelectronic semiconductor chips are arranged on the top sides of the substrates in such a way that three side facets of the optoelectronic semiconductor chips are flush with three side surfaces of the substrates or protrude beyond the side surfaces of the substrates. Alternatively, only two side facets can be flush with the side surfaces or protrude beyond the side surfaces.

[0026] Advantageously, the luminous surfaces of the module are arranged such that the individual pixels each have only one non-luminous edge. In other words, the pixels are frameless, since they are not surrounded by a non-luminous surface, but only have the non-luminous edge. This allows a plurality of modules to be arranged such that the luminous surfaces are particularly closely spaced from one another.

[0027] In one embodiment, the substrates each have a side surface facing away from the optoelectronic semiconductor chips. A lateral distance between the emission surfaces of optoelectronic semiconductor chips of adjacent optoelectronic arrangements is smaller than a distance between the optoelectronic semiconductor chips and the side surfaces of the substrates facing away from the optoelectronic semiconductor chips, in particular smaller than 10% of the distance between the optoelectronic semiconductor chips and the facing-away side surfaces.

[0028] In one embodiment, the optoelectronic semiconductor chips, the second upper contact surfaces, and the third upper contact surfaces of an optoelectronic arrangement are each arranged laterally adjacent to one another. In other words, the non-luminous edge of an optoelectronic arrangement is essentially defined only by an area of ​​the second upper and third upper contact surfaces.

[0029] In one embodiment, the optoelectronic semiconductor chips are pixelated and each have a plurality of emission surfaces facing away from the upper sides of the substrates. Advantageously, the optoelectronic component has subpixels that are arranged particularly close to one another. In one embodiment, a wavelength-converting material is arranged on each emission surface of the optoelectronic semiconductor chips facing away from the upper sides of the substrates. The wavelength-converting material is designed to absorb electromagnetic radiation of a first wavelength spectrum emitted by the optoelectronic semiconductor chips and to emit electromagnetic radiation of a second wavelength spectrum. Advantageously, this results in the emission of electromagnetic radiation with a combined wavelength spectrum.

[0030] For example, the optoelectronic semiconductor chips can be configured to emit blue light, while the wavelength-converting material is configured to absorb the blue light and, after relaxation to lower energy levels, emit yellow light. Overall, white light is emitted, as required for ADB headlights. The white conversion can be realized by a thin layer of the wavelength-converting material and advantageously offers high contrast. Thus, the requirements in the field of motor vehicle headlights can be met.

[0031] In one embodiment, the optoelectronic component comprises a plurality of modules, each comprising a plurality of at least mechanically interconnected optoelectronic arrangements according to one of the described embodiments. The modules are arranged laterally adjacent to one another on a carrier. The carrier can be designed, for example, as a printed circuit board (PCB). Alternatively, the carrier can comprise a ceramic material.

[0032] A method for producing an optoelectronic component has the following method steps. A plurality of optoelectronic assemblies is provided. Providing the optoelectronic assemblies can also comprise producing the optoelectronic assemblies. Each optoelectronic assemblies has a substrate with a top side and a bottom side opposite the top side, and an optoelectronic semiconductor chip arranged on the top side of the substrate and designed to emit electromagnetic radiation on an emission surface facing away from the top side. The optoelectronic assemblies are connected to one another by means of at least one connecting element.

[0033] The process is based on the idea of ​​combining individual pixels into a module. The optoelectronic arrays can be arranged laterally next to one another with high precision and close spacing. Interconnected optoelectronic arrays form modules. The modules can be used to create larger, two-dimensional arrays without the optoelectronic arrays having to be arranged individually on a carrier. Instead, the prefabricated modules can be arranged on a carrier.

[0034] This makes it possible to position the emission surfaces or luminous surfaces of the optoelectronic semiconductor chips very closely next to one another, thus achieving high luminance and a homogeneous luminous surface with minimal brightness fluctuations in the area between the optoelectronic semiconductor chips. By constructing a module from individual optoelectronic arrays, a wide variety of configurations can be realized. Furthermore, the modules make it possible to create a component with any number of pixels.

[0035] In one embodiment, the optoelectronic assemblies are arranged on a temporary carrier prior to bonding such that the substrates of the optoelectronic assemblies face the temporary carrier. The optoelectronic assemblies are bonded to one another on the temporary carrier. The temporary carrier is removed after the optoelectronic assemblies have been bonded. In this embodiment, the optoelectronic assemblies can be bonded to one another by means of the first leadframe sections. The temporary carrier can comprise Kapton, for example. The temporary carrier can also comprise another material. For example, the temporary carrier can comprise a material that allows the temporary carrier to be removed by dissolution.

[0036] In one embodiment, the individual optoelectronic assemblies are tested for proper operation before being connected. Advantageously, only those optoelectronic assemblies that demonstrate proper operation can be connected to form a module. Proper operation can be characterized, for example, by electromagnetic radiation with a predeterminable intensity being emitted during operation of an optoelectronic semiconductor chip, but is not limited to this.

[0037] The above-described properties, features, and advantages of this invention, as well as the manner in which they are achieved, will become clearer and more readily understood in connection with the following description of the embodiments, which are explained in more detail in conjunction with the drawings.

[0038] Fig. 1: an optoelectronic arrangement according to a first embodiment in a plan view and a side sectional view;

[0039] Fig. 2: optoelectronic arrangements according to a second embodiment in a plan view and a side sectional view;

[0040] Fig. 3: optoelectronic arrangements according to a third embodiment in a plan view and a side sectional view; Fig. 4: optoelectronic arrangements according to a fourth embodiment in a plan view;

[0041] Fig. 5: an optoelectronic component according to a first embodiment in a plan view and a side sectional view;

[0042] Fig. 6: an optoelectronic component according to a second embodiment in a top view, a bottom view and a side sectional view;

[0043] Fig. 7: an optoelectronic component according to a third embodiment in a top view, a bottom view and a side sectional view;

[0044] Fig. 8: an optoelectronic component according to a fourth embodiment in a plan view;

[0045] Fig. 9: an optoelectronic component according to a fifth embodiment in a plan view and a side sectional view;

[0046] Fig. 10: an optoelectronic component according to a sixth embodiment in a plan view, a side sectional view and a side view;

[0047] Fig . 11 : a further optoelectronic component according to a in a plan view .

[0048] Fig. 1 schematically shows an optoelectronic arrangement 1 according to a first exemplary embodiment in a plan view and in a side sectional view along a sectional plane shown in the plan view.

[0049] The optoelectronic arrangement 1 comprises a substrate 2. The substrate 2 has a top side 3 and a bottom side 4 opposite the top side 3. In addition, the substrate 2 has side surfaces 19 extending between the top side 3 and the bottom side 4.

[0050] The substrate 2 has a first upper contact surface 5 and a second upper contact surface 6 on its upper side 3. On its underside 4, the substrate 2 has a first lower contact surface 8 and a second lower contact surface 9. The first upper contact surface 5 is electrically connected to the first lower contact surface 8, and the second upper contact surface 6 is electrically connected to the second lower contact surface 9.

[0051] In the exemplary embodiment of the optoelectronic arrangement 1, the substrate 2 is designed as a ceramic substrate, comprising, for example, aluminum nitride (AIN), with electrical feedthroughs 11. The electrical feedthroughs 11 extend from the underside 4 to the top side 3 of the substrate 2 and electrically connect the first upper and the first lower contact surface 5, 8 and the second upper and the second lower contact surface 6, 9 to one another. The feedthroughs 11 and the contact surfaces 5, 6, 8, 9 comprise at least one metallic material. For example, the contact surfaces 5, 6, 8, 9 can comprise copper. In addition, the contact surfaces 5, 6, 8, 9 can have a gold coating, for example.

[0052] In an alternative embodiment, the substrate 2 is designed as a lead frame, which for example comprises copper and optionally has a gold coating to prevent oxidation. In this case, upper and lower contact surfaces 5, 6, 8, 9, which are electrically connected to one another, are formed by a common section of the lead frame. For example, the first upper and the first lower contact surface 5, 8 are formed by a common section of the lead frame, which extends from the underside 4 to the top side 3. In this case, no electrical feedthroughs 11 are required, since the substrate 2 itself is electrically conductive and the contact surfaces 5, 6, 8, 9 are formed by surfaces of the lead frame. An optoelectronic semiconductor chip 12 is arranged on the first upper contact surface 5 and is electrically connected to the first contact surface 5.The optoelectronic semiconductor chip 12 is designed to emit electromagnetic radiation. The optoelectronic semiconductor chip 12 can be designed, for example, as a light-emitting diode (LED). Alternatively, the optoelectronic semiconductor chip 12 can be designed as a laser diode. A solder material can be arranged between the first upper contact surface 5 and the optoelectronic semiconductor chip 12, as a result of which the optoelectronic semiconductor chip 12 is firmly connected to the first upper contact surface 5, i.e., fixed to it and electrically connected to it.

[0053] In addition to the top view and the side sectional view, Fig. 1 shows a transparent top view of the substrate 2, which illustrates the arrangement of the upper contact surfaces 5, 6 on the upper side 3 of the substrate 2. The cutting plane along which the side sectional view runs is also shown in the transparent top view.

[0054] The first upper contact surface 5 protrudes beneath the optoelectronic semiconductor chip 12. In other words, the optoelectronic semiconductor chip 12 does not cover the entire first upper contact surface 5. A portion of the first upper contact surface 5 not covered by the optoelectronic semiconductor chip 12 is arranged laterally next to the second upper contact surface 6. As a result, both the first upper and the second upper contact surfaces 5, 6 are exposed and can be electrically contacted. The lower contact surfaces 8, 9 and the feedthroughs 11 can also be omitted.

[0055] By way of example, a wavelength-converting material 14 is arranged on an emission surface 13 of the optoelectronic semiconductor chip 12 facing away from the top side 3 of the substrate 2. The wavelength-converting material 14 has a phosphor which is embedded, for example, in a plastic, such as silicone. The phosphor is designed to absorb electromagnetic radiation emitted by the optoelectronic semiconductor chip 12 during operation and to emit electromagnetic radiation of a longer wavelength. Overall, this emits electromagnetic radiation which corresponds to a superposition of the emission spectrum of the optoelectronic semiconductor chip and the emission spectrum of the phosphor, as a result of which white light can be generated, for example.

[0056] The efficiency of the conversion depends on the concentration of the phosphor and the thickness of the wavelength-converting material 14 relative to the emission surface 13 of the optoelectronic semiconductor chip 12. In contrast to the illustration in Fig. 1, the wavelength-converting material 14 can, for example, have a thickness that is greater than the thickness of the optoelectronic semiconductor chip 12. Thus, different thicknesses of the wavelength-converting material 14 are possible. However, the wavelength-converting material 14 can also be omitted.

[0057] Furthermore, an electrical contact pad 15 is arranged on the emission surface 13 of the optoelectronic semiconductor chip 12. The contact pad 15 is connected to the second upper contact surface 6 by means of a bonding wire 16. The bonding wire 16 can comprise gold, for example. The bonding wire 16 is embedded in an encapsulation 17. The encapsulation 17 comprises a dielectric material, for example silicone, silicon dioxide, titanium dioxide or aluminum oxide. The encapsulation 17 can therefore be either soft or hard. In order to embed the bonding wire 16, the encapsulation 17 is arranged partly on the upper side 3 of the substrate 2 and partly on the emission surface 13 of the optoelectronic semiconductor chip 12. As a result, the optoelectronic semiconductor chip 12 is at least partially embedded in the encapsulation 17. The wavelength converting material 14, however, is not embedded in the encapsulation 17.The encapsulation 17 is also arranged, for example, on the upper side 3 of the substrate 2 in such a way that the first upper and the second upper contact surface 5, 6 are each partially embedded in the encapsulation 17 and at least partially exposed. This enables electrical contacting of a plurality of optoelectronic devices 1 and the arrangement of an integrated circuit. However, the contact pad 15, the bonding wire 16 and the encapsulation 17 can also be omitted.

[0058] The optoelectronic semiconductor chip 12 has a rectangular cross-section parallel to the substrate 2. The optoelectronic semiconductor chip 12 has side facets 18 which extend perpendicular to the emission surface 13 and perpendicular to the top side 3 of the substrate 2. The optoelectronic semiconductor chip 12 is arranged on the top side 3 of the substrate 2 in such a way that three side facets 18 of the optoelectronic semiconductor chip 12 are flush with a respective side surface 19 of the substrate 2. In other words, a lateral distance between the optoelectronic semiconductor chip 12 and the side surfaces 19 in three directions parallel to the substrate 2 is zero except for error tolerances. In other embodiments, the three side surfaces 18 are not exactly flush with the substrate edge 19.However, it is expedient that the distance be selected as small as possible in order to achieve a maximum luminous area relative to a base area of ​​the optoelectronic arrangement 1. In another embodiment, three side facets 18 can protrude beyond the side surfaces 19.

[0059] Since the optoelectronic semiconductor chip 12, the first upper contact surfaces 5 and the second upper contact surfaces 6 of the optoelectronic arrangement 1 are arranged laterally next to one another and three side surfaces 18 of the optoelectronic semiconductor chip 12 are flush with the side surfaces 19, a non-luminous surface of the optoelectronic arrangement 1 is essentially defined by a total surface of the section of the first upper contact surface 5 that is not covered by the optoelectronic semiconductor chip 12, the second upper contact surfaces 5, 6 and a surface formed between the first and second upper contact surfaces 5, 6. This non-luminous surface is formed between a further side facet 18 of the optoelectronic semiconductor chip 12, which is not flush with a further side surface 19 of the substrate 2, and the further side surface 19.This area / region shall be referred to as the non-luminous edge 20 of an optoelectronic arrangement 1. In other words, the substrates 2 each have a side surface 19 facing away from the optoelectronic semiconductor chips. The non-luminous edge 20 is formed between the optoelectronic semiconductor chip 12 and the side surface 19 facing away from the optoelectronic semiconductor chip 12.

[0060] Fig. 2 schematically shows an optoelectronic arrangement 1 according to a second embodiment in a side sectional view and a top view. The optoelectronic arrangement 1 of Fig. 2 has similarities to the optoelectronic arrangement 1 of Fig. 1. In the following, only differences from the optoelectronic arrangement 1 of Fig. 1 are explained. The reference numerals are retained for similar or identical elements.

[0061] In the optoelectronic arrangement 1 according to Fig. 2, the wavelength-converting material 14 is, for example, thicker than the wavelength-converting material 14 of Fig. 1, in particular it is, for example, thicker than the optoelectronic semiconductor chip 12. This can improve conversion efficiency. Furthermore, in contrast to the embodiment of Fig. 1, the first upper and the second upper contact surface 5, 6 are completely embedded in the encapsulation 17. The encapsulation 17 extends over the entire non-luminous edge 20 of the optoelectronic arrangement 1. The wavelength-converting material 14 is flush with the encapsulation 17 on a side facing away from the top side 3 of the substrate 2, which is not absolutely necessary but has the advantage of a planar top side of the optoelectronic arrangement 1, on which, for example, fewer dust particles can accumulate.

[0062] Fig. 3a schematically shows an optoelectronic arrangement 1 according to a third embodiment in a side sectional view and a top view. The optoelectronic arrangement 1 of Fig. 3a has similarities to the optoelectronic arrangement 1 of Fig. 2. In the following, only differences from the optoelectronic arrangement 1 of Fig. 2 are explained. The reference numerals are retained for similar or identical elements.

[0063] The optoelectronic arrangement 1 according to Fig. 3a, in contrast to the embodiment of Fig. 2, has a temporary encapsulation 21 in addition to the permanent encapsulation 17. The temporary encapsulation 21 has two separate sections which are arranged on the first upper contact surface 5 and on the second upper contact surface 6 and extend from the first and second upper contact surfaces 5, 6, each perpendicular to the upper side 3 of the substrate 2, through the encapsulation 17. The temporary encapsulation 21 is removable. For example, the temporary encapsulation 21 can be dissolved or etched, while the encapsulation 17 remains. The removal of the temporary encapsulation 21 enables electrical contact to be made between the first and second upper contact surfaces 5, 6.

[0064] Fig. 3b schematically shows an optoelectronic arrangement 1 according to a third embodiment in a side sectional view and a top view. The optoelectronic arrangement 1 of Fig. 3b has similarities to the optoelectronic arrangement 1 of Fig. 3a. In the following, only differences from the optoelectronic arrangement 1 of Fig. 3a are explained. The reference numerals are retained for similar or identical elements. The removal of the temporary encapsulation 21 enables the electrical contacting of the first and second upper contact surfaces 5, 6. The optoelectronic arrangement 1 of Fig. 3b therefore comprises additional contacts 39, which are arranged in cavities of the encapsulation 17 that remain after the removal of the temporary encapsulation 21. The additional contacts 39 can, for example, comprise silicon, copper or aluminum.The additional contacts 39 are exposed on a surface of the encapsulation 17 facing away from the top side 3 of the substrate 2 in order to enable electrical contact. In this case, the first and second contact surfaces 5, 6 are completely embedded in the encapsulation 17 since they do not need to be contacted in the region of the top side 3 of the substrate 2, but rather at the exposed additional contacts 39. In the optoelectronic arrangement 1 of Figs. 3a and 3b, the lower contact surfaces 8, 9 and thus also the electrical feedthroughs 11 can be omitted.

[0065] Fig. 3c schematically shows an optoelectronic arrangement 1 according to a third embodiment in a side sectional view and a top view. The optoelectronic arrangement 1 of Fig. 3c has similarities to the optoelectronic arrangement 1 of Fig. 3b. In the following, only differences from the optoelectronic arrangement 1 of Fig. 3b are explained. The reference numerals are retained for similar or identical elements.

[0066] The optoelectronic arrangement 1 of Fig. 3c has no lower contact surfaces 8, 9 and no electrical feedthroughs 11. Instead, a connecting layer 43, which can be electrically conductive or insulating, is arranged on the underside 4. The connecting layer 43 can, for example, comprise a metal. The connecting layer 43 can also be designed as an adhesive. The optoelectronic arrangement 1 of Fig. 3c can be arranged on a further substrate. The material of the connecting layer 43 can be selected depending on the connection method to the further substrate.

[0067] Fig. 4 schematically shows an optoelectronic arrangement 1 according to a second embodiment in a top view. The optoelectronic arrangement 1 of Fig. 4 has similarities to the optoelectronic arrangement 1 of Fig. 1. In the following, only differences from the optoelectronic arrangement 1 of Fig. 1 are explained. The reference numerals are retained for similar or identical elements.

[0068] The optoelectronic semiconductor chip 12 of the optoelectronic arrangement from Fig. 4 is pixelated and has a plurality of emission surfaces 13 facing away from the top side 3 of the substrate 2. By way of example, the optoelectronic semiconductor chip 12 comprises two subpixels 41, i.e. the optoelectronic semiconductor chip 12 has two separate emission surfaces 13 formed laterally next to one another. The subpixels 41 are connected to one another in series, for example. In this case, the optoelectronic arrangement 1 comprises a third upper contact surface 7, which is arranged on the top side 3 of the substrate 2. A third lower contact surface can also be arranged on the underside 4 of the substrate 2, which is electrically connected to the fourth upper contact surface 7 if lower contact surfaces 8, 9 are provided.

[0069] Fig. 5 schematically shows an optoelectronic component 22 in a top view and a side sectional view. The sectional view runs along a sectional plane drawn in the top view. The optoelectronic component 22 has a plurality of optoelectronic arrangements 1. For this reason, the optoelectronic component 22 can also be referred to as a module.

[0070] The module has, for example, four optoelectronic arrangements 1 according to Fig. 1. Fewer than four or more than four optoelectronic arrangements 1 can also be provided, for example twenty-four. The optoelectronic arrangements 1 are arranged laterally next to one another and are mechanically and electrically connected to one another by means of first lead frame sections 23. In this case, first and second upper contact surfaces 5, 6 of immediately adjacent optoelectronic arrangements 1 are mechanically and electrically connected to one another by means of the first lead frame sections 23. The first lead frame sections 23 have, for example, copper and a gold coating, but they can also have a different metallic material or an alloy. The coating can also have a different material or can be omitted.

[0071] The first leadframe sections 23 are embedded in a molding material 24. The molding material 24 is arranged on the upper sides 3 of the substrates 2, extends between the optoelectronic arrangements 1 and additionally connects them to one another in a mechanical manner. The molding material 24 is arranged in the region of the non-luminous edge 20 and outside the encapsulation 17 on the upper side 3 of the substrate 2. Accordingly, the first leadframe sections 23 are also arranged in the region of the non-luminous edge 20 and outside the encapsulation 17. The first leadframe sections 23 are embedded in the molding material 24 such that they are exposed on a side of the module facing away from the upper sides 3 of the substrates 2. As a result, the module can be contacted in the region of the exposed first leadframe sections 23, for example by means of a bonding wire. The molding material 24 can, for example, comprise an epoxy or another plastic.The molding material 24 can also be omitted.

[0072] Fig. 6 schematically shows an optoelectronic component 22 according to a further embodiment in a top view, a bottom view and a side sectional view, the top view and the sectional view being shown on the left and the bottom view on the right. The sectional view runs along a sectional plane drawn in the top view. The optoelectronic component 22 of Fig. 6 has similarities to the optoelectronic component 22 of Fig. 5. Only differences from the optoelectronic component of Fig. 3 are explained below. The reference symbols are retained for similar or identical elements.

[0073] In contrast to the optoelectronic component 22 according to Fig. 5, not the first and second upper contact surfaces 5, 6, but first and second lower contact surfaces 8, 9 of immediately adjacent optoelectronic arrangements 1 are mechanically and electrically connected to one another by means of second leadframe sections 25 arranged on the undersides 4 of the substrates 2. The first leadframe sections 23 are omitted in this case. The molding material 24 is also omitted. The encapsulation 17 extends according to Fig. 2 completely over the non-luminous edge 20, i.e. the second and third upper contact surfaces are embedded in the encapsulation 17 or are covered by it. The optoelectronic component 22 according to Fig. 6 therefore has optoelectronic arrangements 1 according to Fig. 2.

[0074] Furthermore, the first lower contact surfaces 8 of the optoelectronic arrangements 1 are connected to one another by means of a third lead frame section 26. All optoelectronic semiconductor chips 12 are arranged in the region above the third lead frame section 26, i.e. the third lead frame section 26 is provided for all optoelectronic semiconductor chips 12 and is arranged on the undersides 4 of the substrates 2 in regions of the first lower contact surfaces 8, wherein the third lead frame section 26 extends between the first lower contact surfaces 8 or between the optoelectronic semiconductor chips 12, i.e. between the optoelectronic arrangements 1.

[0075] The second and third leadframe sections 25, 26 are embedded in a further molding material 27 arranged on the undersides 4 of the substrates 2 and are each exposed on a side facing the undersides 4 of the substrates 2, i.e. the second leadframe sections 25 and the third leadframe section 26 are not covered by the further molding material 27 in the region of the undersides 4 of the substrates 2, so that electrical and mechanical contact with the first and second lower contact surfaces 8, 9 is possible. The further molding material 27 can, for example, comprise an epoxy or another plastic. The third leadframe section 26 is also exposed on a side facing away from the undersides 4 of the substrates 2, as a result of which heat can be dissipated during operation of the optoelectronic semiconductor chips 12.The second leadframe sections 25, however, are not exposed on the side facing away from the undersides 4 of the substrates 2 and are embedded in the additional molding material 27 or are covered by the additional molding material 27. Since the second leadframe sections 25 are exposed on the side of the additional molding material 27 facing the undersides 4, they can be used for electrical contacting on the top side, for example by means of bonding wires.

[0076] Fig. 7 schematically shows an optoelectronic component 22 according to a further embodiment in a top view, a bottom view and a side sectional view, the top view and the sectional view again being shown on the left and the bottom view on the right. The sectional view runs along a sectional plane drawn in the top view. The optoelectronic component 22 of Fig. 7 has similarities to the optoelectronic component 22 of Fig. 6. Only differences from the optoelectronic component of Fig. 6 are explained below. The reference symbols are retained for similar or identical elements.

[0077] In contrast to the optoelectronic component 22 according to Fig. 6, in the optoelectronic component 22 according to Fig. 7, in addition to the third leadframe section 26, the second leadframe sections 25 are also exposed on the side of the further molding material 27 facing away from the undersides 4 of the substrates 2. As a result, the second leadframe sections 25 can be used for electrically contacting the underside of the module, wherein the contacting can again be effected, for example, by means of bonding wires.

[0078] Fig. 8 schematically shows an optoelectronic component 22 according to a further embodiment in a plan view. Previously used reference numerals are retained. In the optoelectronic component according to Fig. 8, a plurality of optoelectronic arrangements 1 according to Fig. 3b or 3c are arranged next to one another on a further substrate 42. The further substrate 42 can comprise aluminum or copper, for example. The optoelectronic arrangements 1 are arranged on the further substrate 42 such that the undersides 4 of the substrates 2 face the further substrate 42.

[0079] The lower contact surfaces 8, 9 are not required in this case and can be omitted. The optoelectronic arrangements 1 can be fixed to the further substrate 42, for example, by means of an adhesive.

[0080] In the embodiment shown in Figs. 6 to 8, the optoelectronic arrangements 1 are each arranged laterally next to one another with the undersides 4 of the substrates 2 on a further substrate 42, which forms a connecting element. According to Fig. 8, the further substrate 42 comprises, for example, a metallic material. In an alternative variant, the further substrate 42 is formed by a ceramic substrate.

[0081] With reference to Fig. 6 and Fig. 7, the further substrate 42 is formed by a leadframe substrate. The leadframe substrate has the further molding material 27, the second leadframe sections 25 embedded in the further molding material 27, and the third leadframe section 26 embedded in the further molding material 27.

[0082] In an alternative embodiment of the underside electrical contact, the further substrate 42 is formed by a metal core board. In this case, the lead frame substrate is omitted. The metal core board has a metallic material and conductor tracks insulated from the metallic material. The conductor tracks are arranged on a surface of the metal core board. The optoelectronic arrangements 1 are arranged with the undersides 4 of the substrates 2 on the conductor tracks.

[0083] Instead of the second conductor track sections 25, the metal core board has first conductor tracks. Instead of the third lead frame section 26, the metal core board has a second conductor track. First and second lower contact surfaces 8, 9 of immediately adjacent optoelectronic assemblies 1 are each electrically connected to one another by means of the first conductor tracks. In this case, the mechanical connection of the optoelectronic assemblies 1 is mediated by the metal core board on which the optoelectronic assemblies 1 are arranged.

[0084] Furthermore, the first lower contact surfaces 8 of the optoelectronic arrangements 1 are connected to one another by means of the second conductor track, i.e., the second conductor track of the metal-core circuit board is provided for all optoelectronic semiconductor chips 12 and is arranged on the undersides 4 of the substrates 2 in regions of the first lower contact surfaces 8, wherein the second conductor track extends between the first lower contact surfaces 8 of the optoelectronic semiconductor chips 12 of the optoelectronic arrangements 1. Such conductor tracks can be provided not only in a metal-core circuit board, but also in other further substrates 42, for example, in the ceramic substrate.

[0085] In a further embodiment, the further substrate 42 is formed by a lead frame. In this case, the further molding material 27 is omitted. In contrast, the lead frame has the second lead frame sections 25 and the third lead frame section 26. In contrast to the lead frame substrate, the lead frame sections 25, 26 are not embedded in the further molding material 27. Fig. 9 schematically shows an optoelectronic component 22 according to a further embodiment in a top view and a side sectional view. The optoelectronic component 22 of Fig. 9 comprises the elements of the optoelectronic component 22 of Fig. 5 and additional elements. Only the additional elements are described below. The reference symbols are retained for similar or identical elements.

[0086] The optoelectronic component 22 according to Fig. 9 has an integrated circuit 28 which is arranged in the region above the first lead frame sections 23 with respect to the substrates 2. The integrated circuit 28 is therefore arranged on the upper sides 3 of the substrates 2 and outside the encapsulation 17 in the region of the non-luminous edge 20. The integrated circuit 28 can also be referred to as a logic layer which can have different functionalities. For example, the integrated circuit 28 can be designed as a driver. Alternatively or additionally, the integrated circuit 28 can have a bus system, for example. The integrated circuit 28 can also comprise other functions.

[0087] A first rewiring layer 29 is arranged between the first leadframe sections 23 and the integrated circuit 28 and is electrically contacted with the first leadframe sections 23 and the integrated circuit 28. A second rewiring layer 30 is arranged on a side of the integrated circuit 28 facing away from the first rewiring layer 29 and is electrically contacted with the integrated circuit 28.

[0088] A contact layer 31 is arranged on a side of the second rewiring layer 30 facing away from the integrated circuit 28. The contact layer 31 has further leadframe sections 32 which are embedded in an additional molding material 33, which for example comprises an epoxy, and which are exposed both on a side of the contact layer 31 facing towards the second rewiring layer 30 and on a side of the contact layer 31 facing away from the second rewiring layer 30. The further leadframe sections 32 are electrically contacted with the second rewiring layer 30, as a result of which the integrated circuit 28 can be contacted via the further leadframe sections 32 exposed on the side of the contact layer 31 facing away from the second rewiring layer 30.The contact layer 31 may be referred to as an upper contact layer, while the first lead frame sections 23 embedded in the molding material 24 and the molding material 24 may be referred to as a lower contact layer.

[0089] Fig. 10 schematically shows an optoelectronic component 22 according to a further embodiment in a plan view, a side sectional view and a side view, the plan view and the sectional view being shown on the left side and the side view on the right side. The optoelectronic component 22 of Fig. 10 has similarities to the optoelectronic component 22 of Fig. 9. In the following, only differences from the optoelectronic component of Fig. 9 are explained. The reference numerals are retained for similar or identical elements.

[0090] In the optoelectronic component 22 according to Fig. 10, the optoelectronic arrangements 1 are embedded in a further encapsulation 34. However, the lower contact surfaces 8, 9 are not covered by the further encapsulation 34 and are exposed so that the module can be contacted. Furthermore, surfaces of the wavelength-converting material 14 facing away from the emission surfaces 13 are not covered by the further encapsulation 34 and are exposed. Alternatively, if no wavelength-converting material 14 is provided, the emission surfaces 13 are each exposed. Furthermore, the further leadframe sections 32 are exposed and are not covered by the further encapsulation 34. All other elements of the module are embedded in the further encapsulation 34. The further encapsulation 34, like the encapsulation 17, can comprise, for example, silicone, silicon dioxide, titanium dioxide or aluminum oxide.In this case, the encapsulation 17 may be omitted. However, both the encapsulation 17 and the additional encapsulation 34 may be provided.

[0091] The described optoelectronic arrangements 1 make it possible to provide optoelectronic components 22 or modules 22 whose luminous surfaces can be arranged particularly closely next to one another. This is also made possible by the fact that the optoelectronic arrangements 1 have only a narrow, non-luminous edge 20. The optoelectronic arrangements 1, which each form separate pixels, can therefore be referred to as frameless pixels. This makes it possible to provide modules in the manufacture of which the arrangement of the optoelectronic arrangements 1 is carried out with high precision. The modules can then be used to produce larger arrays with close spacing between the luminous surfaces without particularly high precision being required when arranging the modules. This makes it possible to provide arrays with homogeneous emission characteristics and high contrast in a simple and cost-effective manner.

[0092] Fig. 11 schematically shows a further optoelectronic component 38 in a plan view. The previously used reference numerals are retained.

[0093] The further optoelectronic component 38 of Fig. 11 has a plurality of modules, each having a plurality of optoelectronic arrangements 1 which are at least mechanically connected to one another. The modules can be designed according to one of Figs. 5 to 10, while the optoelectronic arrangements 1 can be designed according to one of Figs. 1 to 4. The modules are arranged laterally next to one another on a carrier 35. Fig. 11 shows, by way of example, that a total of four modules, each having twenty-four optoelectronic arrangements 1, are arranged next to one another in rows. However, the further optoelectronic component 38 can have any desired number of modules, wherein the modules can each have any desired number of optoelectronic arrangements 1. For example, the further optoelectronic component 38 can be designed according to Fig. 11 alternatively twenty-four modules each having four optoelectronic arrangements 1 .

[0094] The modules can be embedded in an additional encapsulation 35 arranged on the carrier 34, although this is not absolutely necessary. The modules and the additional encapsulation 35 are arranged centrally on the carrier 35. A contact region 37 with a plurality of further contact pads for electrically contacting the modules is arranged in an edge region of the carrier 35. Two opposing contact regions 37 are formed purely as an example. For example, the modules can be connected in series with one another, as a result of which the optoelectronic arrangements 1 are also connected in series. The further optoelectronic component 38 according to Fig. 11 can be designed, for example, as an ADB headlight.

[0095] The invention has been illustrated and described in more detail using preferred embodiments. However, the invention is not limited to the disclosed examples. Rather, other variations may be derived therefrom by those skilled in the art without departing from the scope of the invention.LIST OF REFERENCE SYMBOLS optoelectronic arrangement substrate top side of the substrate bottom side of the substrate first upper contact area second upper contact area third upper contact area first lower contact area second lower contact area electrical feedthroughs optoelectronic semiconductor chip emission area / luminous area of ​​the optoelectronic semiconductor chip wavelength converting material contact pad of the optoelectronic semiconductor chip bonding wire encapsulation side areas of the optoelectronic semiconductor chip substrate edge non-luminous edge of the optoelectronic arrangement temporary encapsulation optoelectronic component first lead frame section molding material second lead frame section third lead frame section further molding material integrated circuit first rewiring layer second rewiring layer contact layer further lead frame section additional molding material further encapsulation carrier 36 additional encapsulation.

[0096] 37 Contact area

[0097] 38 Further optoelectronic component

[0098] 39 Additional contacts 41 Subpixels

[0099] 42 additional substrate

[0100] 43 Connection layer

Claims

PATENT CLAIMS 1. Optoelectronic component (22) comprising at least one module with a plurality of optoelectronic arrangements (1), wherein each optoelectronic arrangement has a substrate (2) with a top side (3) and a bottom side (4) opposite the top side (3), and an optoelectronic semiconductor chip (12) arranged on the top side (3) of the substrate (2) and designed to emit electromagnetic radiation on an emission surface (13) facing away from the top side (3), wherein the optoelectronic arrangements (1) are arranged laterally next to one another and are mechanically connected to one another by means of at least one connecting element (23, 24, 25, 26, 27, 42).

2. Optoelectronic component (22) according to claim 1, wherein a first upper and a second upper contact surface (5, 6) are arranged on the upper sides of the substrates, wherein the optoelectronic semiconductor chips (12) are each arranged on the first upper contact surfaces (5) and are electrically connected to them, wherein a plurality of first lead frame sections (23) form the connecting elements, wherein first upper and second upper contact surfaces (5, 6) of immediately adjacent optoelectronic arrangements (1) are mechanically and electrically connected to one another by means of the first lead frame sections (23).

3. Optoelectronic component (22) according to claim 2, wherein the first leadframe sections (23) are embedded in a molding material (24) arranged on the upper sides (3) of the substrates (2) and are exposed on a side facing away from the upper sides (3) of the substrates (2), wherein the molding material (24) extends between the optoelectronic arrangements (1) and mechanically connects them to one another.

4. Optoelectronic component (22) according to claim 2 or 3, wherein an integrated circuit (28) is arranged in the region above the first leadframe sections (23) with respect to the upper sides (3) of the substrates (2).

5. Optoelectronic component (22) according to claim 1, wherein the substrates (2) each have a first upper and a second upper contact surface (5, 6) on their upper sides (3), wherein the optoelectronic semiconductor chips (12) are each arranged on the first upper contact surfaces (5) and electrically connected to them, wherein the optoelectronic arrangements (1) with the undersides (4) of the substrates (2) are arranged laterally next to one another on a further substrate (42) which forms a connecting element.

6. Optoelectronic component (22) according to claim 5, wherein the substrates (2) each have a first upper and a second upper contact surface (5, 6) on their upper sides (3) and a first lower and a second lower contact surface (8, 9) on their lower sides (4), wherein the first upper contact surfaces (5) are each connected to the first lower contact surfaces (8) and the second upper contact surfaces (6) are each connected to the second lower contact surfaces (8), wherein the optoelectronic semiconductor chips (12) are each arranged on the first upper contact surfaces (5) and electrically connected thereto, wherein the further substrate (42) is formed by a leadframe substrate, wherein the leadframe substrate has a further molding material (27) arranged on the lower sides (4) of the substrates (2), a plurality of second leadframe sections (25), and a third leadframe section (26),wherein the second leadframe sections (25) and the third, Lead frame section (26) is exposed on a side facing the undersides (4) of the substrates (2) and the third lead frame section (26) is exposed on a side facing away from the undersides (4) of the substrates (2), wherein the optoelectronic semiconductor chips (12) are arranged in the region above the third lead frame section (26), wherein first lower and second lower contact surfaces (8, 9) of immediately adjacent optoelectronic arrangements (1) are mechanically and electrically connected to one another by means of the second lead frame sections (25).

7. Optoelectronic component (22) according to claim 6, wherein the second leadframe sections (25) are each exposed on the side facing away from the undersides (4) of the substrates (2).

8. Optoelectronic component (2) according to one of the preceding claims 2 to 7, wherein a contact pad (15) is arranged on each of the emission surfaces (13) of the optoelectronic semiconductor chips, wherein the contact pads (15) are each connected by means of a bonding wire (16) are each connected to a second upper contact surface (6).

9. Optoelectronic component (22) according to claim 8, wherein the bonding wires (16) are each inserted into a groove formed on the upper sides (3) of the substrates (2) and partially embedded in the encapsulation (17) arranged on the emission surfaces (13) of the optoelectronic semiconductor chips (12).

10. Optoelectronic component (22) according to claim 9, wherein the first and second upper contact surfaces (5, 6) are each embedded in the encapsulation (17) or at least partially exposed.

11. Optoelectronic component (22) according to one of the preceding claims 2 to 10, wherein the optoelectronic arrangements (1) are embedded in a further encapsulation (34), wherein the emission surfaces (13) of the optoelectronic semiconductor chips (12) or surfaces facing away from the emission surfaces (13) of a wavelength-converting material (14) arranged on the emission surfaces (13) are each exposed.

12. Optoelectronic component (22) according to one of the preceding claims, wherein the optoelectronic semiconductor chips (12) each have mounting surfaces opposite their emission surfaces (13) and side facets (18) each extending between the mounting surfaces and the emission surfaces (13), wherein the substrates (2) each have side surfaces (19) extending between their undersides (4) and their upper sides (3), wherein the optoelectronic semiconductor chips (12) are arranged on the upper sides (3) of the substrates (2) in such a way that three side facets (18) of the optoelectronic semiconductor chips (12) are flush with three side surfaces (19) of the substrates (2) or protrude beyond the side surfaces (19) of the substrates (2).

13. Optoelectronic component (22) according to claim 12, wherein the substrates (2) each have a side surface (19) facing away from the optoelectronic semiconductor chips (12), wherein a lateral distance between the emission surfaces (13) optoelectronic semiconductor chips (12) of adjacent optoelectronic arrangements (1) is smaller than a distance between the optoelectronic semiconductor chips (12) and the side surfaces (19) of the substrates (2) facing away from the optoelectronic semiconductor chips (12), in particular smaller than 10% than the distance between the optoelectronic semiconductor chips (12) and the facing away side surfaces (19).

14. Optoelectronic component (22) according to one of the preceding claims, wherein the optoelectronic semiconductor chips (12) are pixelated and each have a plurality of emission surfaces (13) facing away from the upper sides (3) of the substrates (2).

15. Optoelectronic component (22) according to one of the preceding claims, wherein a wavelength-converting material (14) is arranged on emission surfaces (13) of the optoelectronic semiconductor chips (12) facing away from the upper sides (3) of the substrates (2).

16. Optoelectronic component (38) according to one of the preceding claims, comprising a plurality of modules each having a plurality of at least mechanically interconnected optoelectronic arrangements (1) according to one of the preceding claims, wherein the modules are arranged laterally next to one another on a carrier (35).

17. A method for producing an optoelectronic component (22, 38) according to one of claims 1 to 16, comprising the following method steps: - Providing a plurality of optoelectronic arrangements (1), each optoelectronic arrangement (1) comprising a substrate (2) with a top side (3) and a bottom side (4) opposite the top side (3), and an optoelectronic semiconductor chip (12) arranged on the top side (3) of the substrate (2) and designed to emit electromagnetic radiation on an emission surface (13) facing away from the top side (3), - Connecting the optoelectronic arrangements (1) by means of at least one connecting element (23, 24, 25, 26, 27, 42).

18. Method according to claim 17, wherein the optoelectronic assemblies (1) are arranged on a temporary carrier prior to bonding such that the substrates (2) of the optoelectronic assemblies (1) face the temporary carrier, wherein the optoelectronic assemblies (1) are bonded to one another on the temporary carrier, wherein the temporary carrier is removed after bonding the optoelectronic assemblies (1).

19. The method according to claim 17 or 18, wherein the individual optoelectronic assemblies (1) are tested for proper operation prior to bonding.

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