Substrate processing apparatus, substrate processing method, method for producing semiconductor device, and program

Abstract

The present invention comprises: a processing chamber for processing a substrate; a substrate support part provided with a substrate support surface capable of supporting a substrate within the processing chamber; a first gas supply part capable of supplying a processing gas to the processing chamber via a first gas supply hole; a second gas supply part capable of supplying a non-processing gas to a side of the substrate support part via a second gas supply hole; a first wall provided between the substrate support part and the second gas supply hole in a horizontal direction, the first wall being provided at a position where the upper end thereof is higher than the upper end of the substrate support part; a first exhaust flow path provided between the first wall and the substrate support part; and a second exhaust flow path provided below the second gas supply hole.

Description

Substrate processing apparatus, substrate processing method, semiconductor device manufacturing method and program

[0001] The present disclosure relates to a substrate processing apparatus, a substrate processing method, a method for manufacturing a semiconductor device, and a program.

[0002] There are substrate processing apparatuses that process multiple substrates at once to improve production efficiency. For example, Japanese Patent Application Laid-Open No. 2022-2263 discloses an apparatus that processes substrates in a state where multiple substrate mounting surfaces are arranged in a processing chamber and a substrate is mounted on each substrate mounting surface.

[0003] However, in the above-described conventional example, there is a concern that the processing gas used to process the substrate may be supplied unevenly across the surface of the substrate.

[0004] The present disclosure provides uniformity in substrate processing.

[0005] According to one aspect of the present disclosure, there is provided a technology including: a processing chamber for processing a substrate; a substrate support part having a substrate support surface capable of supporting a substrate within the processing chamber; a first gas supply part capable of supplying a processing gas to the processing chamber through a first gas supply hole; a second gas supply part capable of supplying a non-processing gas to a side of the substrate support part through a second gas supply hole; a first wall horizontally disposed between the substrate support part and the second gas supply hole, the first wall having an upper end positioned higher than an upper end of the substrate support part; a first exhaust flow path disposed between the first wall and the substrate support part; and a second exhaust flow path disposed below the second gas supply hole.

[0006] According to the present disclosure, uniform substrate processing is possible.

[0007] FIG. 2 is an explanatory view for explaining a substrate processing apparatus according to a first embodiment. FIG. 3 is an explanatory view for explaining a substrate processing apparatus according to the first embodiment. FIG. 4 is an explanatory view for explaining a substrate processing apparatus according to the first embodiment. FIG. 5 is an explanatory view for explaining a substrate processing apparatus according to the first embodiment. FIG. 6 is an explanatory view for explaining a first gas supply unit according to the first embodiment. FIG. 7 is an explanatory view for explaining a second gas supply unit according to the first embodiment. FIG. 8 is an enlarged explanatory view of part B in FIG. 2. FIG. 9 is an explanatory view for explaining a controller according to the first embodiment. FIG. 10 is an explanatory view for explaining a substrate processing flow according to the first embodiment. FIG. 11 is an enlarged explanatory view corresponding to FIG. 7 according to a second embodiment.

[0008] A first embodiment of the present disclosure will be described below. Components indicated by the same reference numerals in each drawing are the same or similar components. Note that duplicated descriptions and reference numerals may be omitted in the embodiments described below. Furthermore, all drawings used in the following description are schematic, and the dimensional relationships, ratios, etc. of each element shown in the drawings do not necessarily match those of reality. Furthermore, the dimensional relationships, ratios, etc. of each element between multiple drawings do not necessarily match.

[0009] First Embodiment A substrate processing apparatus 100 according to this embodiment will be described first with reference to Figures 1 to 7. In Figure 1, the lower side of the figure is expressed as the front, and the upper side of the figure is expressed as the rear.

[0010] (Substrate Processing Apparatus) The substrate processing apparatus 100 includes an IO stage (load port) 110, an atmospheric transfer unit 120, a load lock unit 130, a vacuum transfer unit 140, and a substrate processing unit 150. The substrate processing unit 150 includes a processing chamber 201, a substrate support table 210 as an example of a substrate support unit, a first gas supply unit 300, an inert gas supply unit 320, a first wall 351, a first exhaust flow path 361, and a second exhaust flow path 362.

[0011] (Atmospheric Transfer Chamber / IO Stage) An IO stage (load port) 110 is installed at the front of the substrate processing apparatus 100. A plurality of pods 111 are mounted on the IO stage 110. The pod 111 is used as a carrier for transporting substrates such as silicon (Si) substrates, and is configured to store a plurality of horizontally oriented product substrates PS (unprocessed product substrates) on which circuits or the like have already been formed, processed product substrates PS, and dummy substrates DS (dummy substrates). In the following description, when simply referred to as a substrate S, this may include either or both of the product substrates PS and the dummy substrates DS.

[0012] The pod 111 is provided with a cap, which is opened and closed by a pod opener (not shown). The pod opener opens and closes the cap of the pod 111 placed on the IO stage 110 and opens and closes the substrate loading / unloading opening 128, thereby enabling the substrate S to be loaded and unloaded from the pod 111. The pod 111 is supplied to and unloaded from the IO stage 110 by an AMHS (Automated Material Handling Systems) (not shown).

[0013] The IO stage 110 is adjacent to the atmospheric transfer unit 120. The atmospheric transfer unit 120 is connected to a load lock unit 130 (described later) on a side different from the IO stage 110.

[0014] An atmospheric transfer robot 122 that moves the substrate S is installed in the atmospheric transfer section 120. The atmospheric transfer robot 122 is configured to be raised and lowered by an elevator installed in the atmospheric transfer section 120, and is configured to be moved back and forth in the left and right directions by a linear actuator.

[0015] A substrate loading / unloading port 129 is provided behind the atmospheric transfer unit 120 for loading / unloading the substrate S into / from the load lock unit 130. The substrate loading / unloading port 129 is opened / closed by a gate valve, thereby allowing the substrate S to be loaded / unloaded.

[0016] (Load Lock Section) The load lock section 130 has a standby section 135 that supports the substrate S. The standby section 135 supports the substrate S that has been transferred from the atmospheric transfer section and the substrate S that has been transferred from the vacuum transfer section 140.

[0017] A substrate loading / unloading port 131 is provided between the load lock unit 130 and the vacuum transfer unit 140. A gate valve (not shown) is provided near the substrate loading / unloading port 131 so that the load lock unit 130 and the vacuum transfer unit 140 can be isolated from each other.

[0018] (Vacuum Transfer Section) The vacuum transfer section 140 is provided with a vacuum transfer robot 142 that transfers the substrate S. The vacuum transfer robot 142 transfers the substrate S between the load lock section 130 and the substrate processing section 150. The vacuum transfer robot 142 has at least a finger 143, an arm 144, and a base 145. The vacuum transfer robot 142 also has a robot control section 146 that controls the rotation, extension, etc. of the arm 144.

[0019] The substrate S is supported on fingers 143 , and is moved between the load lock unit 130 and the substrate processing unit 150 by the arm 144 rotating and extending under the control of a robot control unit 146 .

[0020] Similarly, a substrate loading / unloading port 141 is provided between the vacuum transfer unit 140 and the substrate processing unit 150. A gate valve (not shown) is provided near the substrate loading / unloading port 141 so that the vacuum transfer unit 140 and the substrate processing unit 150 can be isolated from each other.

[0021] (Substrate Processing Section) Next, the specific structure of the substrate processing section 150 will be described. As shown in FIGS. 1 and 2 , the substrate processing section 150 includes a processing vessel 202. The processing vessel 202 is also called a processing module. The processing vessel 202 is configured as, for example, a flat, sealed vessel with a rectangular cross section. The processing vessel 202 is made of a metal material such as aluminum (Al) or stainless steel (SUS). A processing chamber 201 for processing the substrate S is formed within the processing vessel 202. The processing chamber 201 is configured with a gas supply structure 230, a substrate support table 210, etc., which will be described later.

[0022] A substrate loading / unloading port 141 adjacent to the gate valve 208 is provided on the side of the processing vessel 202 , and the substrate S is transferred between the processing vessel 202 and the vacuum transfer unit 140 via the substrate loading / unloading port 141 .

[0023] The substrate support pedestal 210 has a substrate support surface 211 capable of supporting a substrate S in the processing chamber 201. The substrate support pedestal 210 is configured to be able to heat the substrate S. A plurality of substrate support pedestals 210 are arranged in the processing vessel 202 around an axis 221 (described later). The arrangement of the substrate support pedestals 210 will be described with reference to FIG. 1. The longitudinal cross-sectional view taken along line A-A corresponds to FIG. 2.

[0024] At least four substrate support stages 210 are provided. Specifically, from a position facing the substrate loading / unloading port 141, the substrate support stages 210a, 210b, 210c, and 210d are arranged clockwise.

[0025] The substrate support table 210 has substrate support surfaces 211 (substrate support surfaces 211a to 211d) on which the substrates S are placed, and recesses 215 (recesses 215a to 215d) provided on the outer periphery of the substrate support surfaces 211. That is, a plurality of substrate support surfaces 211 are arranged in the radial direction of the processing vessel 202.

[0026] The substrate support table 210 is part of the convex structure that constitutes the recess 215 and has an upper surface 214 (upper surfaces 214a to 214d) that faces the gas supply unit. Since the substrate S is not placed on the upper surface 214, it may be expressed as a non-substrate support surface, which corresponds to the substrate support surface. Here, for convenience of explanation, the non-substrate support surface has been described as part of the convex structure, but it may be any surface that does not support a substrate, and may be, for example, a surface that is continuous with or adjacent to the substrate support surface 211.

[0027] Furthermore, the substrate support table 210 has heaters 213 (213a to 213d) as a heat source. The substrate support table 210 has through-holes, through which the lift pins 207 pass, formed at positions corresponding to the lift pins 207.

[0028] The substrate support table 210 is supported by a shaft 217 (from a shaft 217a to a shaft 217b), which penetrates the bottom 204 of the processing vessel 202.

[0029] The diameter of the substrate support surface 211 is configured to be slightly larger than the diameter of the substrate S. Therefore, when the substrate S is placed thereon, there is a gap that does not support the substrate S. As described above, this gap may be called a non-substrate support surface.

[0030] Lift pins 207 are provided so as to penetrate the bottom portion 204. The lift pins 207 are disposed at positions where they can pass through through holes provided in the substrate support table 210. The tips of the lift pins 207 support the substrate S when the substrate is loaded / unloaded.

[0031] Lift pin support portions 212 (212a to 212d) are provided at the lower ends of the lift pins 207. Substrate lifting / lowering portions 216 (216a to 216d) are provided on each lift pin support portion 212. The substrate lifting / lowering portions 216 raise and lower the lift pins 207. The lift pin support portions 212 and the substrate lifting / lowering portions 216 are provided corresponding to the respective substrate support stages 210a to 210d.

[0032] Gas supply structures 230 (230a to 230d) serving as gas dispersion mechanisms are provided on the lid 203 of the processing vessel 202 at positions facing the respective substrate support surfaces 211. When viewed from above, the plurality of gas supply structures 230 are arranged as shown in FIG.

[0033] 4, each gas supply structure 230 is provided with a gas supply hole 231. Specifically, gas supply structure 230a is provided with a gas supply hole 231a, gas supply structure 230b is provided with a gas supply hole 231b, gas supply structure 230c is provided with a gas supply hole 231c, and gas supply structure 230d is provided with a gas supply hole 231d. The gas supply holes 231a, 231b, 231c, and 231d are respectively connected to distribution pipes 305a, 305b, 305c, and 305d of a common gas supply pipe 301, which will be described later. Note that the vertical cross-sectional view taken along line CC in FIG. 4 corresponds to FIG. 2. A processing gas, which will be described later, is supplied from the gas supply structure 230.

[0034] Annular second gas supply holes 241 are provided around the gas supply structure 230 in the lid portion 203. Specifically, second gas supply holes 241a are provided around the gas supply structure 230a. Second gas supply holes 241b are provided around the gas supply structure 230b. Second gas supply holes 241c are provided around the gas supply structure 230c. Second gas supply holes 241d are provided around the gas supply structure 230d. The gas supply holes 241a, 241b, 241c, and 241d are respectively connected to distribution pipes 505a, 505b, 505c, and 505d of the gas supply pipe 501, which will be described later. A non-processing gas, which will be described later, is supplied from the second gas supply holes 241.

[0035] The space between each gas supply structure 230 and the substrate S is referred to as a processing space 209. The structure constituting the processing space 209 is referred to as a processing chamber 201. In this embodiment, the structure constituting the processing space 209a and having at least the gas supply structure 230a and the substrate support pedestal 210a is referred to as a processing chamber 201a. The structure constituting the processing space 209b and having at least the gas supply structure 230b and the substrate support pedestal 210b is referred to as a processing chamber 201b. The structure constituting the processing space 209c and having at least the gas supply structure 230c and the substrate support pedestal 210c is referred to as a processing chamber 201c. The structure constituting the processing space 209d and having at least the gas supply structure 230d and the substrate support pedestal 210d is referred to as a processing chamber 201d.

[0036] Although the processing chamber 201 has been described as having at least the gas supply structure 230 and the substrate support table 210, it goes without saying that any structure that constitutes the processing space 209 for processing the substrate S is sufficient, and depending on the structure of the apparatus, the structure of the gas supply structure 230 and the like are not essential. The same applies to other processing chambers.

[0037] 1, each substrate support table 210 is disposed around a shaft 221. A rotation arm 222 is provided on the shaft 221. The rotation arm 222 has a plurality of arms 223 and a fixing portion 224 that fixes each arm 223 to the shaft 221. The fixing portion 224 is fixed to the shaft 221 on the shaft 221. The arms 223 are disposed radially around the fixing portion 224.

[0038] The shaft 221 is configured to penetrate the ceiling 203 of the processing vessel 202, and an elevation rotation unit 225 is provided outside the processing vessel 202 on the side opposite to the rotation arm 222. The elevation rotation unit 225 raises, lowers, and rotates the shaft 221. The elevation rotation unit 225 enables the shaft 221 to be raised and lowered independently of each substrate support stage 210. The rotation direction is, for example, in the direction of the arrow in FIG. 1 .

[0039] At the tip of the arm 223, a plurality of claws 226 are provided that protrude in the direction of rotation of the rotation arm 222. The claws 226 are configured to support the rear surface of the substrate S.

[0040] When the rotation arm 222 picks up the substrate S from the substrate support table 210, the lift pins 207 are raised and the shaft 221 is lowered from the state shown in FIG. 2. At this time, the rotation arm 222 is positioned higher than the substrate support surface 211 as shown in FIG. 3. Furthermore, the lift pins 207 are placed in a state where they support the substrate S at a position higher than the rotation arm 222 on the substrate support surface 211. By rotating the rotation arm 222, the claws 226 are positioned below the substrate S. Thereafter, the lift pins 207 are lowered, and the substrate S is moved onto the claws 226.

[0041] When the substrate S is moved from the rotation arm 222 to the substrate support table 210, the lift pins 207 and the rotation arm 222 are controlled in the reverse order. When performing substrate processing, which will be described later, the rotation arm 222 waits above the processing vessel 202, as shown in FIG.

[0042] The shaft 221, the arm 223, and the fixed part 224 are collectively referred to as the substrate rotating part 220. The substrate rotating part 220 may also include a lifting and rotating part 225. The substrate rotating part 220 is also referred to as the substrate transport part. Furthermore, a combination of either the substrate lifting part or the substrate rotating part, or all of the combinations, may be collectively referred to as the lifting and lowering part.

[0043] A first wall 351 is provided between the substrate support pedestal 210 and the second gas supply hole 241 in the horizontal direction of the processing chamber 201. The upper end of the first wall 351 is provided at a position higher than the upper surface 214, which is an example of the upper end of the substrate support pedestal 210. By making the first wall 351 higher, the processing gas is reliably confined to the area above the substrate support pedestal 210 while preventing non-processing gas from invading the edge portion of the substrate, thereby preventing dilution of the processing gas at the edge portion of the substrate. The substrate edge portion refers to the outer periphery of the substrate S.

[0044] 2 and 3 , partition members 250 may be provided between the plurality of substrate support pedestals 210 to divide the processing chamber 201 into upper and lower sections at the height of the substrate support pedestals 210. The partition members 250 are used to equalize the pressure in the processing space 209, etc. As will be described later, a gas curtain made of non-processing gas is formed to prevent gas from adhering to the partition members 250.

[0045] (Gas Exhaust System) The gas exhaust system 260 that exhausts the atmosphere in the processing vessel 202 will now be described. The gas exhaust system 260 is provided to correspond to each processing space 209 (209a to 209d). For example, the processing space 209a corresponds to the gas exhaust system 260a, the processing space 209b corresponds to the gas exhaust system 260b, the processing space 209c corresponds to the gas exhaust system 260c, and the processing space 209d corresponds to the gas exhaust system 260d.

[0046] The gas exhaust system 260 has exhaust pipes 262 (262a to 262d) communicating with exhaust holes 261 (261a to 261d), and further has APCs (Auto Pressure Controllers) 266 (266a to 266d) provided in the exhaust pipes 262. The APCs 266 have valve bodies (not shown) with adjustable openings, and adjust the conductance of the exhaust pipes 262 in response to instructions from the controller 400. In addition, valves 267 (267a to 267d) are provided in the exhaust pipes 262 upstream of the APCs 266.

[0047] The exhaust pipe 262 , the valve 267 , and the APC 266 are collectively called a gas exhaust system 260 .

[0048] Furthermore, the exhaust pipe 262, the pressure monitor unit (not shown), the valve 267, and the APC 266 are collectively referred to as an exhaust unit. A DP (Dry Pump) 269 is provided downstream of the exhaust pipe 262. The DP 269 exhausts the atmosphere inside the processing chamber 201 through the exhaust pipe 262. In this embodiment, a DP 269 is provided for each gas exhaust system 260, but this is not limitative and a DP 269 may be provided in common for each gas exhaust system.

[0049] The sensors detect the status of each component, such as the operating time and number of times of the heater 213, and the operating time and number of times of the valve 267 and the APC 266. Note that the description of the sensors in FIG. 3 is omitted for the sake of convenience.

[0050] 5 and 6, the first gas supply unit 300 and the non-processing gas supply unit 500 will be described. First, the first gas supply unit 300, which is in communication with the gas supply holes 231 (231a to 231d), will be described in Fig. 5. The first gas supply unit 300 includes, for example, a first process gas supply unit 310 and a second process gas supply unit 330.

[0051] Each gas supply hole 231 is configured to communicate with a distribution pipe 305 (305a to 305d). Each distribution pipe 305 is connected to a common gas supply pipe 301 via a collecting pipe 306.

[0052] The gas supply structures 230 (230a to 230d) are connected to distribution pipes 305 (305a to 305d). That is, each distribution pipe 305 is configured to correspond to each substrate support surface 211. The distribution pipes 305 (305a to 305d) are provided with valves 302 (302a to 302d) and MFCs 303 (303a to 303d) which are volume controllers (flow rate control units). A flow meter (not shown) is connected to each of the MFCs 303 (303a to 303d). The amount of gas supplied to each processing chamber 201 is measured based on the flow rate measured by the flow meter and the measurement time.

[0053] The amount of gas supplied from the distribution pipe 305 into the processing chamber 201 is measured by a flow meter (not shown). The amount of gas supplied into each processing chamber 201 is adjusted using each valve 302 and MFC 303. A first gas supply pipe 311 and a third gas supply pipe 331 are connected to the common gas supply pipe 301.

[0054] A common gas supply system is mainly composed of a distribution pipe 305, a collecting pipe 306, a valve 302, and an MFC 303. The common gas supply system may include a flow rate measuring device.

[0055] The first process gas supply unit 310 will be described. The first process gas supply unit 310 is configured to be able to supply a first process gas to the process chamber 201 via the first gas supply holes 231. A first gas supply pipe 311 in the first process gas supply unit 310 is provided with, in this order from the upstream direction, a first gas source 312, an MFC 313, and a valve 314 which is an on-off valve.

[0056] The first gas source 312 is a source of a first process gas containing a first element (also referred to as a "first-element-containing gas"). The first-element-containing gas is a raw material gas, i.e., one of the process gases. Here, the first element is silicon (Si). That is, the first-element-containing gas is a silicon-containing gas. Specifically, dichlorosilane (SiH ２ Cl ２ . DCS) and hexachlorodisilane (Si ２ Cl ６ . Also called HCDS.) gas is used.

[0057] The first gas supply pipe 311, the MFC 313, and the valve 314 mainly constitute a first process gas supply unit 310 (also referred to as a silicon-containing gas supply system).

[0058] Next, a description will be given of the second process gas supply unit 330. The second process gas supply unit 330 can supply a second process gas to the process chamber 201, for example, through the first gas supply holes 231. The third gas supply pipe 331 is provided with, in this order from the upstream side, a third gas source 332, an MFC 333, and a valve 334 which is an on-off valve.

[0059] The third gas source 332 is a source of a second process gas containing a second element (hereinafter also referred to as a "second-element-containing gas"). The second-element-containing gas is one of the process gases. The second-element-containing gas may also be considered as a reaction gas.

[0060] Here, the second element-containing gas contains a second element different from the first element. The second element is, for example, oxygen (O). In this embodiment, the second element-containing gas is, for example, an oxygen-containing gas. Specifically, the oxygen-containing gas is ozone (O ３ ) gas is used.

[0061] As the oxidizing agent (oxidizing gas), for example, a gas containing oxygen (O) and hydrogen (H) can be used. As the O and H containing gas, for example, water vapor (H ２ O gas), hydrogen peroxide (H ２ O ２ ) gas, hydrogen (H ２ ) gas + oxygen (O ２ ) gas, H2 gas + ozone (O ３ As the oxidizing agent, in addition to O and H containing gas, for example, an oxygen (O) containing gas can be used. As the O containing gas, for example, O ２ Gas, O ３ Gas, nitrous oxide (N ２ O) gas, nitric oxide (NO) gas, nitrogen dioxide (NO ２ ) gas, carbon monoxide (CO) gas, carbon dioxide (CO ２ ) gas, etc. can be used. Note that an O- and H-containing gas is also a type of O-containing gas. One or more of these can be used as the oxidizing agent.

[0062] The term "agent" used in this specification includes at least one of a gaseous substance and a liquid substance. Liquid substances include mist-like substances. That is, film-forming agents, modifying agents, and etching agents may contain a gaseous substance, a liquid substance such as a mist-like substance, or both.

[0063] The third gas supply pipe 331, the MFC 333, and the valve 334 mainly constitute a second process gas supply unit 330 (also referred to as a reactive gas supply system).

[0064] Note that either the first process gas supply unit 310 or the second process gas supply unit 330, or a combination thereof, is referred to as the first gas supply unit 300. For convenience of explanation, the first process gas supply unit 310 and the second process gas supply unit 330 are configured to be connected to a common gas supply pipe 301, but this is not limitative. It is sufficient that each gas supply unit can supply gas into the process chamber 201. For example, the gas supply unit may have a collecting pipe 306 and a distributor 305, and each gas supply unit may supply gas into the process chamber 201 through a separate system. Furthermore, the first process gas and the second process gas may be collectively referred to as process gas. The process gas may be any gas that contributes to substrate processing and may include other gases.

[0065] The status of each component is detected by a sensor (not shown). The sensor detects, for example, the operating time and number of times of operation of the MFC, and the operating time and number of times of operation of the valve. If a flow rate measuring instrument (not shown) is connected to the sensor, the flow rate of each distribution pipe 305 is detected.

[0066] The flow rate measuring device and the sensor are collectively called the detection unit. Either the flow rate measuring device or the sensor may be called the detection unit.

[0067] 6 , the non-processing gas supply unit 500 includes an inert gas supply unit 320 capable of supplying, for example, an inert gas, which is a non-processing gas. The inert gas supply unit 320 is configured to supply the non-processing gas to the side of the substrate support pedestal 210 via the second gas supply holes 241. The inert gas supply unit 320 generates a gas curtain of the non-processing gas to the side of the substrate support pedestal 210.

[0068] Each gas supply hole 241 is configured to communicate with a distribution pipe 505 (505a to 505d). Each distribution pipe 505 is connected to a gas supply pipe 501 via a collecting pipe 506.

[0069] The distribution pipes 505 (505a to 505d) are provided with valves 502 (502a to 502d) and MFCs 503 (503a to 503d). A flow meter (not shown) is connected to each of the MFCs 503 (503a to 503d). The supply amount of non-processing gas flowing into each processing chamber 201 is measured based on the flow rate measured by the flow meter and the measurement time.

[0070] The amount of gas supplied from the distribution pipe 505 is measured by a flow meter (not shown). The amount of gas supplied to each processing chamber 201 is adjusted using each valve 502 and MFC 503. A second gas supply pipe 321 is connected to the gas supply pipe 501.

[0071] A gas supply system is mainly composed of a distribution pipe 505, a collecting pipe 506, a valve 502, and an MFC 503. The gas supply system may include a flow rate measuring device.

[0072] The second gas supply pipe 321 is provided with a second gas source 322, an MFC 323, and a valve 324 which is an on-off valve, in this order from the upstream direction.

[0073] The second gas source 322 is a source of a non-processing gas containing a third element (also referred to as a "third-element-containing gas"). The third-element-containing gas is, for example, an inert gas. By using an inert gas as the non-processing gas, even if the non-processing gas infiltrates the adjacent substrate support 210, the influence on the substrate processing is reduced. Here, the third element can be, for example, nitrogen (N2) gas, or other rare gases such as argon (Ar) gas, helium (He) gas, neon (Ne) gas, and xenon (Xe) gas. One or more of these can be used as the inert gas.

[0074] The main component of the non-processing gas may be the same as the main component of the processing gas. By making the gas curtain of the non-processing gas have the same main component as the processing gas, dilution of the first gas supplied to the substrate edge portion is suppressed.

[0075] The second gas supply pipe 321, the MFC 323, and the valve 324 mainly constitute an inert gas supply unit 320 (also referred to as an inert gas supply system).

[0076] 1 to 3 and 7, the first exhaust flow path 361 is provided between the first wall 351 and the substrate support table 210. Specifically, a third wall 353 is provided on the side of the substrate support table 210, and the first exhaust flow path 361 is provided between the first wall 351 and the third wall 353. The first wall 351, the second wall 352, and the third wall 353 are configured using a plurality of cylindrical members arranged concentrically. Note that the third wall 353 may be omitted.

[0077] The second exhaust flow path 362 is provided below the second gas supply hole 241. Specifically, below the second gas supply hole 241 and outside the first wall 351 in the horizontal direction, a second wall 352 is provided that constitutes the second exhaust flow path 362 between itself and the first wall 351. With this configuration, a gas curtain of non-processing gas can be formed outside the first wall 351.

[0078] 7, the height of the upper end of the second wall 352 may be configured to be the same as or lower than the height of the upper end of the first wall 351. In the example shown, the height of the upper end of the second wall 352 is lower than the height of the upper end of the first wall 351 and higher than the upper surface 14A of the substrate support table 210. By making the second wall lower than the first wall, non-processing gas is less likely to flow toward the inside of the first wall, which makes it possible to prevent excessive dilution of the processing gas.

[0079] The inner surface of the second gas supply hole 241 may be provided on the second exhaust passage 362. With such a structure, the movement of the non-processing gas to the second exhaust passage 362 can be promoted.

[0080] The first gas supply holes 231 may be provided horizontally closer to the substrate support surface 211 than the second gas supply holes 241. With this structure, the non-processing gas can be more reliably used as a gas curtain.

[0081] The combination of the first wall 351, the first exhaust flow path 361, and the second exhaust flow path 362 is provided corresponding to each substrate support pedestal 210. This prevents gas from flowing to an adjacent substrate support pedestal 210, allowing each substrate support pedestal 210 to process substrates independently without being affected by the gas of the adjacent substrate support pedestal 210. For example, uniform processing can be achieved on each substrate support pedestal.

[0082] Furthermore, since the non-processing gas can be used to confine the processing gas for each substrate support table 210 while preventing the non-processing gas from invading the substrate edge portion, the non-processing gas will not invade adjacent substrate support tables 210, and dilution of the substrate edge portion by the non-processing gas can be prevented.

[0083] 7, a heater 371 capable of heating the first exhaust flow path 361 may be provided. The heater 371 is disposed in a position where it can heat the first exhaust flow path 361, for example, below the first exhaust flow path 361. The heater 371 heats the first exhaust flow path 361 to a temperature at which the process gas flowing through the first exhaust flow path 361 can maintain its gaseous state. The heater 371 may also be configured to heat a wall facing the outlet side of the first exhaust flow path. It is conceivable that a film may be formed on the wall when the gas flowing through the first exhaust flow path 361 collides with the wall. In response to this, heating the wall can suppress film formation on the wall.

[0084] In particular, when performing cyclic processing in which a raw material gas and a reactive gas that reacts with the raw material gas are alternately supplied as processing gases, it is conceivable that the reactive gas remaining in the first exhaust flow path 361 will react with the processing gas, forming a film that will adhere to the inner wall of the first exhaust flow path 361. However, by heating the first exhaust flow path 361 with the heater 371, it is possible to suppress the adhesion of the film to the first exhaust flow path 361 and to suppress the generation of particles due to peeling of the film.

[0085] The first exhaust flow path 361 and the second exhaust flow path 362 may be connected to each other. A heater 372 capable of heating the second exhaust flow path 362 may also be provided. The heater 372 heats the first exhaust flow path 361 to a temperature at which the process gas flowing into the second exhaust flow path 362 can maintain its gaseous state. If the first exhaust flow path 361 and the second exhaust flow path 362 are connected to each other, the process gas may flow into the second exhaust flow path 362, causing a film to adhere to the wall of the second exhaust flow path 362. However, by heating the second exhaust flow path 362 with the heater 372, it is possible to suppress the adhesion of a film to the second exhaust flow path 362 and suppress the generation of particles due to peeling of the film.

[0086] A third exhaust flow path 363 may be provided to connect the first exhaust flow path 361 and the second exhaust flow path 362. A heater 373 capable of heating the third exhaust flow path 363 may also be provided. The heater 373 heats the first exhaust flow path 361 to a temperature at which the process gas flowing into the third exhaust flow path 363 can maintain its gaseous state. In the illustrated example, the first exhaust flow path 361 and the second exhaust flow path 362 merge downstream to form the third exhaust flow path 363. If the third exhaust flow path 363 is connected to the first exhaust flow path 361 and the second exhaust flow path 362, process gas may flow into the third exhaust flow path 363, causing a film to adhere to the third exhaust flow path 363. However, by providing the heater 373 to heat the third exhaust flow path 363, it is possible to suppress the adhesion of a film to the third exhaust flow path 363 and reduce the generation of particles due to film peeling.

[0087] The exhaust rate of the second exhaust flow path 362 may be configured to be greater than the exhaust rate of the first exhaust flow path 361. Furthermore, the flow rate of the non-processing gas may be configured to be greater than the flow rate of the first gas upstream of the second exhaust flow path 362 and upstream of the first exhaust flow path 361. The width of the second exhaust flow path 362 may be configured to be greater than the width of the first exhaust flow path 361.

[0088] This increases the flow rate of the non-processing gas that constitutes the gas curtain, and increases the partial pressure of the non-processing gas relative to the processing gas, thereby more reliably confining the processing gas to the space above the substrate support table 210.

[0089] (Controller) Next, the controller 400 will be described. The controller 400 is also called a control unit. The substrate processing apparatus 100 has the controller 400 that controls the operation of each unit of the substrate processing apparatus 100. As shown in FIG. 8 , the controller 400 has at least a calculation unit (CPU) 410, a temporary storage unit (RAM) 420, a storage unit 430, and an I / O port 440. The controller 400 is connected to each component of the substrate processing apparatus 100 via the I / O port 440.

[0090] The calculation unit 410 has a transmission / reception instruction unit 411 and a control unit 414. The transmission / reception instruction unit 411 controls transmission and reception of signals within the substrate processing apparatus 100 and between the substrate processing apparatus 100 and surrounding devices.

[0091] The control unit 414 calls up a program or recipe from the storage unit 430 in response to an instruction from the higher-level device 460 or a user, and controls the operation of each component such as the robot control unit 146 in accordance with the contents of the program or recipe. The storage unit 430 has a recipe information storage unit 431 that stores recipe information.

[0092] The controller 400 may be configured as a dedicated computer or a general-purpose computer. For example, the controller 400 according to this embodiment may be configured by preparing an external storage device 452 (e.g., a magnetic tape, a magnetic disk such as a flexible disk or a hard disk, an optical disk such as a CD or a DVD, a magneto-optical disk such as an MO, or a semiconductor memory such as a USB memory (USB Flash Drive) or a memory card) that stores the above-described program, and installing the program into a general-purpose computer using the external storage device 452. Furthermore, the means for supplying the program to the computer is not limited to supplying the program via the external storage device 452. For example, a communication means such as the Internet or a dedicated line may be used, or information may be received from a higher-level device 460 via a receiving unit 454 and the program may be supplied without going through the external storage device 452. Furthermore, instructions may be given to the controller 400 using an input / output device 451 such as a keyboard or a touch panel.

[0093] The storage unit 430 and the external storage device 452 are configured as computer-readable recording media. Hereinafter, these will be collectively referred to simply as recording media. Note that when the term "recording medium" is used in this specification, it may include only the storage unit 430, only the external storage device 452, or both.

[0094] The controller 400 may be configured to control the first gas supply unit 300 and the inert gas supply unit 500 so as to start the supply of the non-processing gas first, and then start the supply of the processing gas. By supplying the non-processing gas first, the first gas can be more reliably confined within the substrate support table 210.

[0095] The program causes the substrate processing apparatus 100 to execute, by the computer, the following steps: supporting a substrate S on a substrate support surface 211 of a substrate support pedestal 210 (substrate support portion) provided in the processing chamber 201; and evacuating the atmosphere in the processing chamber 201 from a first exhaust flow path 361 provided between the substrate support pedestal 210 (substrate support portion) and the second gas supply hole 241 in the horizontal direction, the first exhaust flow path 361 being provided between the substrate support pedestal 210 (substrate support portion) and a first wall 351 whose upper end is provided at a position higher than the upper end of the substrate support pedestal 210 (substrate support portion), and a second exhaust flow path 362 being provided below the second gas supply hole 241, while supplying a processing gas to the substrate S through the first gas supply hole 231 and a non-processing gas to the side of the substrate support pedestal 210 (substrate support portion) through the second gas supply hole 241.

[0096] (Substrate Processing Method) Next, a substrate processing method will be described with reference to FIG. 9 . The substrate processing method includes the steps of supporting a substrate S on a substrate support surface 211 of a substrate support pedestal 210 (substrate support portion) provided in a processing chamber 201, and supplying a processing gas to the substrate S through the first gas supply holes 231 and a non-processing gas to the side of the substrate support pedestal 210 (substrate support portion) through the second gas supply holes 241, while exhausting the atmosphere in the processing chamber 201 through a first exhaust flow path 361 provided between the substrate support pedestal 210 (substrate support portion) and a first wall 351, the upper end of which is provided at a higher position than the upper end of the substrate support pedestal 210 (substrate support portion), and a second exhaust flow path 362 provided below the second gas supply holes 241, between the substrate support pedestal 210 (substrate support portion) and the second gas supply holes 241 in the horizontal direction. A method for manufacturing a semiconductor device includes the substrate processing method.

[0097] In this embodiment, a process of supplying a processing gas to a product substrate PS and processing the substrate will be described. For example, a process of supplying a Si-containing gas and an oxygen-containing gas to each substrate to form a SiO film will be described as an example.

[0098] In this embodiment, an example in which four product substrates PS are processed in the processing container 202 will be described.

[0099] (S102) The substrate loading step S102 of loading the product substrate PS into the processing chamber 202 will be described.

[0100] In the substrate processing apparatus 100, the rotation arm 222 is raised and rotated so that the claws 226 are positioned above the substrate support table 210a. The vacuum transfer robot 142 moves the arm 144 and transfers the product substrate PS onto the claws 226.

[0101] Once the product substrate PS has been transferred, the rotation arm 222 is rotated, and the product substrate PS is transferred by a similar operation to the claws 226 that are not supporting the product substrate PS. Thereafter, once each claw 226 has been placed on the substrate support table 210, the lift pins 207 are raised and the substrate is transferred from the claws 226 onto the lift pins 207. After the product substrate PS has been transferred, the rotation arm 222 is raised and the lift pins 207 are lowered, and the product substrate PS is transferred onto each substrate support surface 211.

[0102] After the product substrate PS is placed on the substrate support surface 211, the gate valve 208 is closed to seal the inside of the processing vessel 202. In this manner, the product substrate PS is moved into the processing space 209.

[0103] When the product substrate PS is placed on each substrate support surface 211, power is supplied to each heater 213, and the temperature is controlled so that the surface of the product substrate PS reaches a predetermined temperature. The temperature of the product substrate PS is, for example, from room temperature to 800° C., and preferably from room temperature to 700° C. At this time, the controller 400 extracts a control value based on temperature information detected by a sensor, and adjusts the temperature of the heater 213 by controlling the amount of electricity supplied to the heater 213.

[0104] (S104) Next, the gas supply step S104 will be described. Once the product substrates PS moved to each processing space 209 are maintained at a predetermined temperature, the gas supply unit 300 is controlled to supply a silicon-containing gas and an oxygen-containing gas in parallel to the processing space 209. Furthermore, a non-processing gas is supplied from the non-processing gas supply unit 500 to form a gas curtain. At the same time, the gas is exhausted from the gas exhaust system 260.

[0105] In the processing space 209, the silicon-containing gas and the oxygen-containing gas react with each other to form a silicon oxide film as the insulating film 102 on the product substrate PS. At this time, a gas curtain is formed. The silicon-containing gas and the oxygen-containing gas are confined to the region above the substrate support table 210, while the inert gas is prevented from penetrating onto the edge of the substrate. This prevents dilution of the processing gas at the edge of the substrate, enabling uniform processing across the substrate surface.

[0106] Although the case where the Si-containing gas and the oxygen-containing gas are supplied in parallel has been described here, the present invention is not limited to this. The Si-containing gas and the oxygen-containing gas may be supplied alternately and independently, or may be supplied at least partially simultaneously, for example, alternately and partially overlapping.

[0107] After a predetermined time has elapsed, the gas supply is stopped.

[0108] (S106) Next, the substrate unloading step S106 will be described. After the gas supplying step S104, the processed product substrate PS is unloaded from the processing container 202. When unloading, the product substrate PS is unloaded in the reverse order of the substrate loading step S102.

[0109] (S108) Next, judgment S108 will be described. Here, it is determined whether a predetermined number of product substrates PS have been processed. The predetermined number refers to the number of substrates in a lot, for example. If the predetermined number has been processed, the answer is Yes and the process ends. If the predetermined number has not been processed, the answer is No and the process proceeds to S110.

[0110] 10 , in this embodiment, the height of the upper end of the second wall 352 is configured to be higher than the height of the upper end of the first wall 351. In this embodiment, the same effects as those of the above-described embodiment can be obtained. Furthermore, in this embodiment, the non-processing gas flows inside the second wall 352, and the partial pressure of the non-processing gas at the second wall 352 becomes high, so that the processing gas can be more reliably confined within the substrate support pedestal 210.

[0111] [Other Embodiments] The present disclosure is not limited to the above-described embodiments and various modifications are possible without departing from the spirit of the present disclosure. The embodiments can be used in appropriate combinations. The processing procedures and processing conditions in such combinations can be, for example, the same as those in the first embodiment.

[0112] The above-described embodiment can also be suitably applied to the case of forming any of nitride films, oxide films, carbide films, and boride films containing metal elements such as hafnium (Hf), tantalum (Ta), tungsten (W), cobalt (Co), yttrium (Y), ruthenium (Ru), aluminum (Al), titanium (Ti), zirconium (Zr), molybdenum (Mo), and silicon (Si), or a composite film of these.

[0113] When forming a film containing the above-mentioned elements, it is possible to use, as a source gas, a hafnium (Hf)-containing gas, a tantalum (Ta)-containing gas, a tungsten (W)-containing gas, a cobalt (Co)-containing gas, an yttrium (Y)-containing gas, a ruthenium (Ru)-containing gas, an aluminum (Al)-containing gas, a titanium (Ti)-containing gas, a zirconium (Zr)-containing gas, a molybdenum (Mo)-containing gas, a silicon (Si)-containing gas, or the like.

[0114] In the above embodiment, N is used as the inert gas. ２ Although an example using gas has been described, the present invention is not limited to this, and rare gases such as Ar gas, He gas, Ne gas, and Xe gas may also be used.

[0115] The above-described embodiments, modifications, applications, etc. may be used in appropriate combination. In addition, the processing conditions in such combinations may be the same as those in the above-described embodiments.

[0116] It is preferable that process recipes (programs describing processing procedures and processing conditions, etc.) used to form these various thin films are individually prepared (prepared in multiple numbers) depending on the content of substrate processing (such as the type, composition ratio, film quality, film thickness, processing procedure, and processing conditions of the thin film to be formed). When starting substrate processing, it is preferable to appropriately select an appropriate process recipe from the multiple process recipes depending on the content of substrate processing. Specifically, it is preferable that the multiple process recipes individually prepared depending on the content of substrate processing are pre-stored (installed) in a storage device provided in the substrate processing apparatus via an electric communication line or a recording medium (external storage device) on which the process recipes are recorded. It is preferable that, when starting substrate processing, a CPU provided in the substrate processing apparatus appropriately selects an appropriate process recipe from the multiple process recipes stored in the storage device depending on the content of substrate processing. This configuration enables a single substrate processing apparatus to flexibly and reproducibly form thin films with various film types, composition ratios, film quality, and film thicknesses. Furthermore, it is possible to reduce the operator's operational burden (such as the burden of inputting processing procedures and processing conditions), thereby avoiding operational errors and enabling substrate processing to be started quickly.

[0117] The above-described process recipe is not limited to a new creation, but can also be realized by, for example, modifying the process recipe of an existing substrate processing apparatus. When modifying the process recipe, the process recipe according to the present disclosure can be installed in the existing substrate processing apparatus via an electric communication line or a recording medium on which the process recipe is recorded, or the process recipe itself can be modified to the process recipe according to the present disclosure by operating an input / output device of the existing substrate processing apparatus.

[0118] The above-described embodiment describes an example of a single-wafer substrate processing apparatus for processing one or several substrates at a time, in which a process furnace having a structure in which a nozzle for supplying process gas is installed in one reaction tube and an exhaust port is provided at the bottom of the reaction tube is used for film formation. However, the present disclosure can also be applied to film formation using a process furnace having other structures. For example, the present disclosure can also be applied to a process furnace having two reaction tubes (the outer reaction tube is referred to as the outer tube and the inner reaction tube is referred to as the inner tube) with concentric cross sections, in which process gas flows from a nozzle installed in the inner tube to an exhaust port opening on the sidewall of the outer tube at a position opposite the nozzle (position symmetrical to the nozzle) across the substrate. Furthermore, the process gas may be supplied from a gas supply port opening on the sidewall of the inner tube rather than from a nozzle installed in the inner tube. In this case, the exhaust port opening on the outer tube may be opened according to the height of the multiple substrates stacked in the process chamber. Furthermore, the shape of the exhaust port may be a hole or a slit.

[0119] In the above-described embodiment, an example of forming a thin film using a substrate processing apparatus having a cold-wall type processing furnace has been described, but the present disclosure is not limited to this and can also be suitably applied to a case where a thin film is formed using a substrate processing apparatus having a hot-wall type processing furnace. In these cases, the processing conditions can be the same as those in the above-described embodiment.

[0120] This embodiment can be applied not only to semiconductor manufacturing equipment but also to equipment for processing glass substrates, such as LCD devices. The film type is not particularly limited. For example, metal compounds (W, Ti, Hf, etc.), silicon compounds (SiN, Si, etc.), etc., can also be applied. Film formation processes include, for example, CVD, PVD, processes for forming oxide films and nitride films, and processes for forming films containing metals.

[0121] In this specification, "H ２ Gas + O ２ In the case of a combination of two gases, such as "gas," ２ Gas and O ２When supplying a mixed gas, the two gases may be mixed (premixed) in a supply pipe and then supplied into the processing chamber 201, or the two gases may be supplied separately from different supply pipes into the processing chamber 201 and then mixed (postmixed) in the processing chamber 201.

[0122] Unless otherwise specified in the specification, each element is not limited to one, and may be present in plural.

[0123] In this specification, the program may be a program recorded on a computer-readable recording medium. Also, the program may be provided as a computer-readable recording medium on which the program is recorded.

Claims

1. A substrate processing apparatus comprising: a processing chamber for processing a substrate; a substrate support unit having a substrate support surface capable of supporting a substrate within the processing chamber; a first gas supply unit capable of supplying a processing gas to the processing chamber through a first gas supply hole; a second gas supply unit capable of supplying a non-processing gas to a side of the substrate support unit through a second gas supply hole; a first wall horizontally disposed between the substrate support unit and the second gas supply hole, the first wall having an upper end higher than an upper end of the substrate support unit; a first exhaust flow path disposed between the first wall and the substrate support unit; and a second exhaust flow path disposed below the second gas supply hole.

2. The substrate processing apparatus according to claim 1, wherein a plurality of substrate support stages are provided as the substrate support section, and the combinations of the first wall, the first exhaust flow path, and the second exhaust flow path are each provided corresponding to the substrate support stages.

3. A substrate processing apparatus as described in claim 1 or claim 2, further comprising a second wall below the second gas supply hole and horizontally outside the first wall, the second wall constituting the second exhaust flow path between the first wall and the second wall.

4. The substrate processing apparatus according to claim 3, wherein the height of the upper end of the second wall is equal to or lower than the height of the upper end of the first wall.

5. The substrate processing apparatus according to claim 3, wherein the height of the upper end of the second wall is higher than the height of the upper end of the first wall.

6. The substrate processing apparatus according to claim 1 or 2, wherein the non-processing gas is an inert gas.

7. The substrate processing apparatus according to claim 1 or 2, wherein the main component of the non-processing gas is the same as the main component of the processing gas.

8. The substrate processing apparatus according to claim 1 or 2, wherein the inner surface of the second gas supply hole is provided on the second exhaust flow path.

9. The substrate processing apparatus according to claim 1 or 2, wherein the first gas supply holes are provided closer to the substrate support surface than the second gas supply holes in the horizontal direction.

10. The substrate processing apparatus according to claim 1 or 2, further comprising a second processing gas supply unit capable of supplying a second processing gas to the processing chamber through the first gas supply hole.

11. The substrate processing apparatus according to claim 2, wherein partition members are provided between the plurality of substrate support stages to divide the processing chamber into upper and lower sections at the height of the substrate support stages.

12. The substrate processing apparatus according to claim 1 or 2, further comprising a control unit configured to control the first gas supply unit and the second gas supply unit so as to start the supply of the non-processing gas and then start the supply of the processing gas.

13. The substrate processing apparatus according to claim 1 or 2, wherein the flow rate of the non-processing gas is configured to be higher than the flow rate of the processing gas upstream of the second exhaust flow path and upstream of the first exhaust flow path.

14. The substrate processing apparatus according to claim 1 or 2, wherein the width of the second exhaust flow path is configured to be larger than the width of the first exhaust flow path.

15. The substrate processing apparatus according to claim 1, further comprising a heater capable of heating the first exhaust passage.

16. The substrate processing apparatus according to claim 1, wherein the first exhaust passage and the second exhaust passage are in communication with each other, and a heater capable of heating the second exhaust passage is provided.

17. The substrate processing apparatus according to claim 1, further comprising: a third exhaust flow path that connects the first exhaust flow path and the second exhaust flow path; and a heater that can heat the third exhaust flow path.

18. A substrate processing method comprising the steps of: supporting a substrate on a substrate support surface of a substrate support part provided in a processing chamber; supplying a processing gas to the substrate through a first gas supply hole and supplying a non-processing gas to a side of the substrate support part through a second gas supply hole; and exhausting the atmosphere in the processing chamber through a first exhaust flow path provided between the substrate support part and the second gas supply hole in the horizontal direction, the first exhaust flow path being provided between the substrate support part and a first wall whose upper end is located at a higher position than the upper end of the substrate support part, and a second exhaust flow path provided below the second gas supply hole.

19. A method for manufacturing a semiconductor device, comprising the substrate processing method according to claim 18.

20. A program that causes a substrate processing apparatus to execute, by a computer, the following steps: supporting a substrate on a substrate support surface of a substrate support part provided in a processing chamber; and exhausting the atmosphere of the processing chamber through a first exhaust flow path provided between the substrate support part and the second gas supply hole in the horizontal direction, the first exhaust flow path being provided between the substrate support part and a first wall whose upper end is provided at a position higher than the upper end of the substrate support part, and a second exhaust flow path provided below the second gas supply hole, while supplying a processing gas to the substrate through a first gas supply hole and a non-processing gas to the side of the substrate support part through a second gas supply hole.

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