Device manufacturing system and device manufacturing method

Abstract

Provided is a device manufacturing system and a device manufacturing method that make it possible to accurately arrange an element with respect to the position of a target in a short time. Specifically, a device manufacturing system 100 comprises: a singulating device 100b including a singulation processing unit 20 that forms a plurality of semiconductor chips 1 by singulating an element region formation substrate W having formed therein regions that are to become the semiconductor chips 1, in a state where the element region formation substrate W is disposed in a laminated manner on a release layer R on a transfer substrate T; and a transfer device 100c including a laser light irradiation unit 70 that irradiates the transfer substrate T with laser light L in a Z1 direction opposite to a surface of the transfer substrate T on which the semiconductor chips 1 are disposed so as to release the plurality of singulated semiconductor chips 1 from the transfer substrate T and transfer the plurality of singulated semiconductor chips 1 to a target support substrate G.

Description

Device manufacturing system and device manufacturing method

[0001] The present invention relates to a device manufacturing system and a device manufacturing method, and more particularly to a device manufacturing system and a device manufacturing method for manufacturing devices by transferring elements formed by dividing a substrate into individual pieces.

[0002] 2. Description of the Related Art Conventionally, there has been known a mounting method (device manufacturing method) in which elements formed by dividing a substrate are transferred to manufacture a device (see, for example, Patent Document 1).

[0003] Patent Document 1 discloses a method for fabricating an optical device by placing a chip-like functional element formed by singulating a substrate on a chip or wafer (hereinafter simply referred to as a "wafer, etc.") on which an optical waveguide is formed. The method of Patent Document 1 includes a step of provisionally placing the functional element on a guide substrate and a step of aligning the functional element provisionally placed on the guide substrate with an adhesive surface of the wafer, etc. The method of Patent Document 1 also includes a step of contacting the functional element with the wafer, etc., and a step of bonding the functional element with the wafer, etc., to fabricate an optical device by bonding the functional element with the wafer, etc. Here, in the method of Patent Document 1, a marker, which is a concave depression indicating the position where the functional element will be placed, is formed on the guide substrate. Therefore, in the method of Patent Document 1, in the step of provisionally placing the functional element on the guide substrate, the singulated functional element is placed at the marker position on the guide substrate.

[0004] JP 2016-1289 A

[0005] As described above, in the optical device manufacturing method of Patent Document 1, in the step of temporarily placing functional elements on a guide substrate, singulated functional elements are placed at marker positions on the guide substrate. Although not explicitly stated in Patent Document 1, the temporary placement of the functional elements may require a step of transferring singulated functional elements on a stage or the like to a transparent substrate for transfer. However, including the step of transferring multiple singulated functional elements to a transparent substrate increases the time required for the device manufacturing process. Furthermore, the step of transferring singulated functional elements to a transparent substrate may result in the functional elements being transferred to a misaligned position or tilted. In this case, when the functional elements are finally mounted on a wafer or the like, the functional elements may be misaligned. For the reasons described above, there has been a demand for a device manufacturing system and a device manufacturing method that can accurately position elements relative to the position of a wafer or the like (target object) in a short time.

[0006] The present invention has been made to solve the above-mentioned problems, and one object of the present invention is to provide a device manufacturing system and a device manufacturing method that are capable of positioning an element with high precision relative to the position of an object in a short amount of time.

[0007] In order to achieve the above object, a device manufacturing system according to a first aspect of the present invention comprises: a singulation apparatus including a singulation processing unit that forms a plurality of elements by singulating an element region formation substrate, in a state in which the element region formation substrate, on which an element region is formed, is stacked and arranged on a support layer on a transfer substrate; and a transfer apparatus including a laser light irradiation unit that irradiates laser light toward the transfer substrate from the side opposite to the surface on which the elements of the transfer substrate are arranged, so as to peel the singulated plurality of elements from the transfer substrate and transfer them to an object.

[0008] As described above, the device manufacturing system according to the first aspect includes a singulation apparatus including a singulation processing unit that singulates an element region formation substrate, on which element regions are formed, stacked on a support layer on a transfer substrate to form multiple elements. This eliminates the need to transfer elements formed by singulation on a stage separate from the transfer substrate to the target object, thereby shortening the time required for the manufacturing process. Furthermore, because the elements are formed on the transfer substrate, there is no need to transfer and position the elements on the transfer substrate, which would otherwise be required to singulate multiple elements. As a result, elements can be positioned with high precision relative to the target object in a short amount of time.

[0009] In the device manufacturing system according to the first aspect, the support layer preferably includes a release layer that releases the support state of the elements when irradiated with laser light, and the laser light irradiating unit is configured to irradiate the release layer supporting the multiple elements on the transfer substrate from the side opposite to the surface on which the elements are arranged, with the laser light being out of contact with the target object, thereby peeling the elements from the transfer substrate and transferring them to the target object. With this configuration, unlike when the entire transfer substrate supporting the elements is brought into contact with the target object for transfer, elements formed on the transfer substrate can be individually transferred to target positions using the laser lift-off method with a gap between the elements and the target object.

[0010] In the device manufacturing system according to the first aspect, the element preferably includes a functional layer having a bonding interface bonded to the circuit board to form an optical waveguide, and the singulation processing unit singulates the element region formation substrate, which is stacked on the support layer, so that the element is formed independently from the surrounding element region formation substrate without providing a tether portion connecting the functional layer to the surrounding element region formation substrate. Here, for example, when manufacturing a device including an optical waveguide, the substrate may be singulated with a tether portion to form a hollow structure in which the protective material on the surface of the functional layer is removed immediately before transfer, temporarily suspending the element. However, forming this hollow structure is extremely difficult. On the other hand, with the above configuration, the element region formation substrate can be singulated without providing a tether portion, making it easy to form the element. As a result, a device including an optical waveguide can be easily formed.

[0011] A device manufacturing method according to a second aspect of the present invention includes an arrangement step of stacking and arranging an element region formation substrate, on which an element region has been formed, on a support layer formed on a transfer substrate; a singulation step of forming a plurality of elements by singulating the element region formation substrate on the transfer substrate, on which the support layer and the element region formation substrate have been stacked; and a laser light irradiation step of irradiating laser light onto the transfer substrate from the side opposite to the surface on which the plurality of elements are arranged, so as to peel the singulated plurality of elements from the transfer substrate and transfer them to an object.

[0012] The device manufacturing method according to this second aspect includes a singulation step in which a transfer substrate, which is a stack of a support layer and an element region formation substrate, is singulated to form multiple elements. As a result, the elements are formed on the transfer substrate used to transfer the elements to the target object, eliminating the need to transfer the singulated elements formed on a stage separate from the transfer substrate to place them on the transfer substrate, thereby reducing the time required for the manufacturing process. Furthermore, because the elements are formed on the transfer substrate, there is no misalignment of the elements due to the transfer and placement of the multiple elements from the stage used for singulation. As a result, a device manufacturing method can be provided that allows elements to be positioned with high precision relative to the target object in a short amount of time.

[0013] In the device manufacturing method according to the second aspect, preferably, the singulation step forms elements by singulating the element region formation substrate laminated on the support layer without processing the support layer. This configuration prevents the support layer, which serves as a base for supporting the elements, from being processed, thereby preventing tilting of the elements due to deformation of the support layer. Furthermore, it is possible to prevent the support layer from being transferred together with the elements.

[0014] In the device manufacturing method according to the second aspect, the singulation step preferably comprises etching or dicing the element region formation substrate laminated on the support layer to form the plurality of elements. With this configuration, the element region formation substrate can be easily singulated to form the elements even on the support layer.

[0015] In the device manufacturing method according to the second aspect, the element preferably includes a functional layer having a bonding interface bonded to the circuit board to form an optical waveguide. The singulation step singulates the element region formation substrate, which is laminated on the support layer, so that the element is formed independently from the surrounding element region formation substrate without providing a tether portion connecting the functional layer to the surrounding element region formation substrate. Here, for example, when manufacturing a device including an optical waveguide, the substrate may be singulated with a tether portion to form a hollow structure in which the protective material on the surface of the functional layer is removed immediately before transfer, temporarily suspending the element. However, forming this hollow structure is extremely difficult. On the other hand, with the above configuration, the element region formation substrate can be singulated without providing a tether portion, making it easy to form the element. As a result, a device manufacturing method can be provided that allows for easy formation of devices including optical waveguides.

[0016] In the device manufacturing method according to the second aspect, the support layer preferably includes a release layer that is irradiated with laser light to release the support state of the elements, and the laser light irradiation step irradiates the release layer that supports the elements in the transfer substrate from the side opposite to the side on which the elements are arranged, thereby peeling the elements from the transfer substrate and transferring them to the target object. With this configuration, unlike when the entire transfer substrate that supports the elements is brought into contact with the target object for transfer, the elements formed on the transfer substrate can be individually transferred to the target position using the laser lift-off method.

[0017] In the device manufacturing method according to the second aspect, preferably, the element region formation substrate includes a crystalline layer made of a semiconductor or a magnetic material, and the disposing step includes disposing the undiced element region formation substrate on a support layer formed on the transfer substrate. With this configuration, the element region formation substrate including the crystalline layer made of a semiconductor or a magnetic material can be diced, making it possible to manufacture devices using semiconductor elements or magnetic elements.

[0018] In this case, preferably, the element region formation substrate includes a crystal layer and a functional layer formed on the surface of the crystal layer, and the arranging step arranges the undivided element region formation substrate so that the crystal layer is in contact with the support layer formed on the transfer substrate. With this configuration, the support layer does not come into contact with the functional layer that is to be bonded to the object, thereby suppressing contamination of the functional layer caused by contact with the support layer.

[0019] The device manufacturing method, in which the element region formation substrate includes a functional layer, preferably further includes a functional layer forming step of forming a functional layer on the surface of the crystal layer after the arrangement step and before the singulation step. This configuration allows the functional layer to be formed on the surface of the crystal layer while the crystal layer is arranged on the support layer, without using an element region formation substrate on which a functional layer has already been formed. As a result, when transferring the element to the target object, the functional layer, which is the layer not supported by the support layer, can be brought into contact with the target object, thereby facilitating the production of a completed device by bonding the functional layer to the target object.

[0020] As described above, the present invention can provide a device manufacturing system and a device manufacturing method that can place an element with high precision relative to the position of an object in a short amount of time.

[0021] FIG. 1 is a block diagram showing the overall configuration of a device manufacturing system according to a first embodiment. FIG. 2 is a side view for explaining an element region forming substrate according to the first embodiment. FIG. 3 is a front view for explaining a semiconductor chip and an element region forming substrate according to the first embodiment. FIG. 4 is a schematic view for explaining a singulation apparatus according to the first embodiment. FIG. 5 is a schematic view for explaining a transfer apparatus according to the first embodiment. FIG. 6 is a front view for explaining a base member according to the first embodiment. FIG. 7 is a flowchart of a device manufacturing method according to the first embodiment. FIG. 8 is a cross-sectional view for explaining a bonding step according to the first embodiment. FIG. 9 is a cross-sectional view for explaining a grinding and polishing step according to the first embodiment. FIG. 10 is a cross-sectional view for explaining a surface treatment step according to the first embodiment. FIG. 11 is a cross-sectional view for explaining a bonding step according to the first embodiment. FIG. 12 is a schematic view for explaining a device manufactured according to the first embodiment. FIG. 13 is a cross-sectional view for explaining a semiconductor chip formed by being singulated by a singulation step according to a comparative example. FIG. 14 is a block diagram showing the overall configuration of a device manufacturing system according to a second embodiment. FIG. 15 is a schematic view for explaining a transfer apparatus according to the second embodiment. FIG. 16 is a flowchart of a device manufacturing method according to the second embodiment. FIG. 17 is a cross-sectional view for explaining a bonding step according to the second embodiment. 10A and 10B are cross-sectional views for explaining a substrate forming step according to a second embodiment; a cross-sectional view for explaining a singulation step according to the second embodiment; a cross-sectional view for explaining a transfer step according to the second embodiment; a cross-sectional view for explaining a grinding and polishing step according to a modified example of the first embodiment; a cross-sectional view for explaining a bonding step according to a modified example of the first embodiment; a cross-sectional view for explaining a singulation step according to a modified example of the first embodiment; a cross-sectional view for explaining a surface treatment step according to a modified example of the first embodiment; a cross-sectional view for explaining a transfer step according to a modified example of the first embodiment; a cross-sectional view for explaining a substrate forming step according to a modified example of the second embodiment; a cross-sectional view for explaining a singulation step according to a modified example of the second embodiment; a schematic view for explaining a device manufactured according to a modified example of the second embodiment.10A to 10C are cross-sectional views illustrating a transfer step according to a modified example of the second embodiment.

[0022] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will now be described with reference to the accompanying drawings.

[0023] [First Embodiment] (Device Manufacturing System) The configuration of a device manufacturing system 100 according to a first embodiment of the present invention will be described with reference to Figures 1 to 5. As shown in Figure 1, the device manufacturing system 100 includes a pre-processing unit 100a, a singulation unit 100b, a transfer unit 100c, and a post-processing unit 100d.

[0024] As shown in Fig. 2, the pre-treatment device 100a forms a functional layer 1b and a protective layer 1c on the crystal layer 1a to form an element region formation substrate W. The pre-treatment device 100a also performs a process of bonding the element region formation substrate W to the surface of a release layer R formed on the surface of a transfer substrate T (described later) (see Fig. 8). The pre-treatment device 100a also performs a process of grinding and polishing the crystal layer 1a (see Fig. 9). The process performed by the pre-treatment device 100a will be described in detail below.

[0025] 2 and 3, the element region forming substrate W and the semiconductor chip 1 formed by dividing the element region forming substrate W will be described. The element region forming substrate W is a substrate including a crystalline layer 1a made of a semiconductor or a magnetic material. As shown in FIG. 2, in this first embodiment, the element region forming substrate W is a substrate in which, for example, a crystalline layer 1a, a functional layer 1b, and a protective layer 1c are stacked, and has a circular shape as shown in FIG. 3. The semiconductor chip 1 is an example of an "element" in the claims.

[0026] The element region formation substrate W is made of, for example, a compound semiconductor such as a III-V semiconductor, or a material such as a magnetic material. The crystal layer 1a included in the element region formation substrate W is a substrate formed by, for example, liquid phase epitaxial growth. The functional layer 1b is formed on the surface of the crystal layer 1a using, for example, a sputtering method. The protective layer 1c is formed on the surface of the functional layer 1b using, for example, a CVD (Chemical Vapor Deposition) method, and is a protective material that protects the functional layer 1b from dust and the like. The protective layer 1c is made of, for example, SiO2.

[0027] The element region forming substrate W has element regions A arranged in a matrix (rows and columns) at predetermined intervals and later singulated to form a plurality of semiconductor chips 1. The semiconductor chips 1 formed by singulating the element region forming substrate W are, for example, rectangular elements with sides of several tens of micrometers or more and several millimeters or less, and thin elements with a thickness of approximately several hundred nanometers. The semiconductor chips 1 are elements including at least a crystal layer 1a. In the first embodiment, the semiconductor chips 1 are formed by singulating the element region forming substrate W, and therefore have a structure in which the crystal layer 1a, the functional layer 1b, and the protective layer 1c are stacked, similar to the element region forming substrate W.

[0028] 4, the singulation apparatus 100b includes a stage 10, a singulation processing unit 20, and a control unit 30. The stage 10 has a function of transporting the element region formation substrate W placed thereon. The singulation processing unit 20 is configured to perform a process of singulating the element region formation substrate W to form semiconductor chips 1. The singulation processing unit 20 has a function of, for example, photoetching the element region formation substrate W, and can consistently perform all of the processes on the element region formation substrate W, including application of photoresist, drying, exposure, development, cleaning, etching, and photoresist removal. The control unit 30 includes, for example, a processor such as a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random Access Memory), and a GPU (Graphics Processing Unit), and executes a program (software) to perform various controls of the stage 10 and the singulation processing unit 20. Details of the processing performed by the singulation device 100b will be described later.

[0029] As shown in Figure 5, the transfer device 100c includes a substrate holder 40, a stage 50, a moving mechanism 60, a laser light emitter 70, and a controller 80. In the drawing, the left-right direction of the transfer device 100c (one direction in a horizontal plane) is defined as the X direction. The up-down direction (vertical direction) of the transfer device 100c is defined as the Z direction. The upward direction is defined as the Z1 direction, and the downward direction is defined as the Z2 direction. The direction perpendicular to the X and Z directions of the transfer device 100c (the other direction in a horizontal plane) is defined as the Y direction.

[0030] The transfer substrate T is formed of a material that transmits the laser light L, such as a SiO2 (silicon dioxide) substrate or a sapphire substrate. The semiconductor chip 1 is disposed on the element region formation substrate W via a release layer R (see FIG. 8, etc.) formed on the surface of the transfer substrate T. The release layer R is formed of a material that decomposes to generate gas components when irradiated with laser light L from the laser light irradiation unit 70, and is capable of supporting the semiconductor chip 1. For example, polyimide or silicon is used as the release layer R. The release layer R is an example of a "support layer" in the claims.

[0031] 5, the substrate holding unit 40 holds a transfer substrate T on which a semiconductor chip 1 is arranged. The substrate holding unit 40 holds the transfer substrate T on which the semiconductor chip 1 is arranged, with the surface on which the semiconductor chip 1 is arranged facing downward (in the Z2 direction). The substrate holding unit 40 has an opening 41. The transfer substrate T held by the substrate holding unit 40 is irradiated with laser light L from a laser light irradiation unit 70 through the opening 41. The substrate holding unit 40 is configured to be movable relative to the stage 50 in at least the X and Y directions by a movement mechanism 60.

[0032] The support substrate G is a substrate onto which a large number of semiconductor chips 1 arranged on a transfer substrate T are transferred in order to manufacture a semiconductor device, for example. The support substrate G has a rectangular shape and is made of, for example, a glass material. In addition, a catch layer C (see FIG. 11, etc.) is formed on the support substrate G to adhere the transferred semiconductor chips 1.

[0033] The stage 50 holds, from below (Z2 side), the support substrate G onto which the semiconductor chip 1 arranged on the transfer substrate T is transferred. The stage 50 is configured to be movable relative to the substrate holding part 40 at least in the X and Y directions by a movement mechanism 60, which is, for example, an actuator. By performing one or both of the movement of the substrate holding part 40 by the movement mechanism 60 and the movement of the stage 50, the relative positions of the semiconductor chip 1 arranged on the transfer substrate T and the support substrate G are adjusted.

[0034] The laser light irradiation unit 70 is configured to irradiate the transfer substrate T with laser light L. The laser light irradiation unit 70 includes a laser light source 71, a galvanometer mirror 72, and an fθ lens 73. The laser light source 71 is a light source that emits laser light L. The laser light source 71 is controlled by the control unit 80 to intermittently emit the laser light L so that the irradiation time intervals are uniform.

[0035] The galvanometer mirror 72 is composed of two mirrors, each of which can rotate independently about two intersecting axes and reflects the laser light L at any angle. The fθ lens 73 focuses the laser light L from the galvanometer mirror 72 onto the transfer area of ​​the transfer substrate T. As a result, the size of the transfer area arranged on the transfer substrate T falls within the irradiation range of the reflected laser light L within the rotational range of the galvanometer mirror 72. The laser light irradiation unit 70 also includes a galvanometer motor (not shown), and the control unit 80 is configured to change the output of the galvanometer motor to change the movement speed of the laser light L in the X and Y directions.

[0036] Furthermore, the laser light irradiation unit 70 irradiates the transfer substrate T held by the substrate holding unit 40 with laser light L from the surface opposite to the surface supporting the semiconductor chip 1, via a galvanometer mirror 72 and an fθ lens 73. The laser light L is irradiated by the galvanometer mirror 72 and the fθ lens 73 onto an adhesive layer (not shown) in the transfer area that corresponds to the selected semiconductor chip 1. This causes the semiconductor chip 1 to be peeled off from the transfer substrate T, and the semiconductor chip 1 is transferred from the transfer substrate T to the support substrate G. That is, transfer is performed by the laser lift-off method.

[0037] The control unit 80 includes, for example, a processor such as a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random Access Memory), and a GPU (Graphics Processing Unit), and performs various controls by executing a program (software). The control unit 80 arbitrarily selects a semiconductor chip 1 in the transfer area and controls the laser light irradiation unit 70 to irradiate it with laser light L, thereby transferring the selected semiconductor chip 1 to the support substrate G. Details of the processing performed by the transfer device 100c will be described later.

[0038] The post-processing device 100d shown in Fig. 1 removes the protective layer 1c by vacuum plasma treatment and also performs a process to modify the surface of the functional layer 1b (see Fig. 12). The post-processing device 100d also performs a process to bond the semiconductor chip 1 and the base member 2 (see Fig. 13). In this way, the post-processing device 100d manufactures an optical device D (see Fig. 14). The processes performed by the post-processing device 100d will be described in detail below.

[0039] As shown in FIG. 6 , the base member 2 is a component that forms the optical device D by bonding it to the semiconductor chip 1, and is formed of, for example, silicon (Si) and silicon oxide (SiO2) materials. The base member 2 is configured by stacking a cladding layer 2b of SiO2, which is an oxide film, and a core layer 2c, also formed of Si, on a circuit board 2a made of Si. A groove-shaped optical waveguide 2d is formed in the core layer 2c. The core layer 2c of the base member 2 has a higher refractive index than the functional layer 1b of the semiconductor chip 1 and the cladding layer 2b of the base member 2. As a result, in the optical device D manufactured by bonding the semiconductor chip 1 and the base member 2, light incident on the optical waveguide 2d provided in the core layer 2c travels while being totally reflected at the boundary between the functional layer 1b and the cladding layer 2b.

[0040] (Method of Manufacturing Optical Device) Next, a method of manufacturing the optical device D of this embodiment will be described with reference to Figures 7 to 14. The following description will be executed by the device manufacturing system 100 in accordance with the flow of the device manufacturing method shown in Figure 7.

[0041] First, in the substrate formation process of step S1, the pretreatment device 100a in FIG. 1 forms an element region formation substrate W. The pretreatment device 100a accommodates the crystal layer 1a in a chamber (not shown) whose interior is maintained at high temperature and high pressure, and performs sputtering to form a functional layer 1b. The total thickness t1 of the crystal layer 1a and the functional layer 1b is, for example, several hundred μm. The pretreatment device 100a also accommodates the substrate on which the crystal layer 1a and the functional layer 1b are stacked in a chamber (not shown) whose interior is maintained at high temperature and high pressure, and performs CVD to form a protective layer 1c made of SiO2. The thickness of the protective layer 1c is, for example, 1 μm. This forms the element region formation substrate W. Then, the process proceeds to step S2.

[0042] In the bonding process of step S2, the pretreatment device 100a bonds the element region formation substrate W and the transfer substrate T together so that they are integrated. Specifically, as shown in Fig. 8, the pretreatment device 100a positions the surface of the protective layer 1c of the element region formation substrate W and the release layer R formed on the surface of the transfer substrate T so that they face each other, and then moves the element region formation substrate W or the transfer substrate T so that they come into contact with each other. Because the release layer R is an adhesive material, it becomes an integrated body when bonded to the protective layer 1c. Then, the process proceeds to step S3.

[0043] In the grinding and polishing process of step S3, the pre-treatment device 100a uses a grinding wheel S rotating at high speed and an abrasive to grind the crystal layer 1a to reduce its thickness and polish it to eliminate surface irregularities, as shown in Figure 9. Specifically, the pre-treatment device 100a grinds and polishes the crystal layer 1a and the functional layer 1b until the total thickness t1 becomes t2. After polishing, the crystal layer 1a and the functional layer 1b become a thin film with a total thickness t2 of less than 1 μm, for example. Then, the process proceeds to step S4.

[0044] In the singulation process of step S4, the singulation apparatus 100b singulates the element region formation substrate W to form semiconductor chips 1. At this time, the singulation apparatus 100b singulates the element region formation substrate W to form semiconductor chips 1 by etching and removing the partitioned portions set within the element region A shown in FIG. 3 . Specifically, the singulation apparatus 100b, for example, uses the singulation processing unit 20 controlled by the control unit 30 (see FIG. 4 ) to mask the portions of the surface of the crystal layer 1a to be formed as semiconductor chips 1, then applies photoresist and dries it. The control unit 30 also controls the singulation processing unit 20 to expose and develop the element region formation substrate W coated with photoresist and spray an etching solution to dissolve the partitioned portions set within the element region A. The control unit 30 then controls the singulation processing unit 20 to spray a stripping solution to strip the photoresist, thereby completing the singulation of the element region formation substrate W. 10, the semiconductor chip 1 formed by being separated on the release layer R is not provided with a tether portion 1d (see the comparative example shown in FIG. 15, which will be described later) that connects to a part of the surrounding element region formation substrate W. Then, the process proceeds to step S5.

[0045] In the transfer process of step S5, the transfer device 100c (see FIG. 5) transfers the semiconductor chip 1 supported by the transfer substrate T via the release layer R to the catch layer C formed on the surface of the support substrate G. Specifically, as shown in FIG. 11, the control unit 80 of the transfer device 100c causes the substrate holding unit 40 to hold the transfer substrate T so that the catch layer C formed on the surface of the support substrate G placed on the stage 50 faces the crystal layer 1a of the semiconductor chip 1. Then, based on the set position information of the semiconductor chip 1, the control unit 80 moves the substrate holding unit 40 or the stage 50 using the movement mechanism 60 to position the semiconductor chip 1 at the target position. The control unit 80 then controls the laser light irradiation unit 70 to irradiate the laser light L so that the laser light L passes through the transfer substrate T and is irradiated onto the release layer R supporting the semiconductor chip 1. At this time, the release layer R is irradiated with the laser light L, causing ablation, which causes it to deform and expand, generating gas. As a result, the semiconductor chip 1 is released from the support state by the release layer R, and is transferred to the catch layer C of the support substrate G arranged vertically downward by being biased by the gas. Thereafter, the process proceeds to step S6.

[0046] In the surface treatment process of step S6, the post-treatment device 100d removes the protective layer 1c of the semiconductor chip 1 and modifies the surface of the functional layer 1b. Specifically, as shown in FIG. 12, the post-treatment device 100d exposes, for example, plasma P to the support substrate G placed in a vacuum chamber (not shown), and decomposes and removes the protective layer 1c using a bonding reaction of radicals contained in the plasma P. After removing the protective layer 1c, the post-treatment device 100d uses plasma P to remove organic contaminants adhering to the surface of the functional layer 1b and also modifies the surface by adding polar functional groups such as hydroxyl groups and carbonyl groups to the surface of the functional layer 1b. Then, the process proceeds to step S7.

[0047] In the bonding process of step S7, the post-processing device 100d bonds the semiconductor chip 1 and the base member 2 to form an integrated device. Specifically, as shown in FIG. 13, the post-processing device 100d positions the surface of the functional layer 1b of the semiconductor chip 1 and the core layer 2c of the base member 2 facing each other, and then moves the support substrate G so that they come into contact with each other, thereby bonding the surfaces at room temperature. Note that this bonding process requires high cleanliness for both the surfaces of the functional layer 1b of the semiconductor chip 1 and the core layer 2c of the base member 2 to be bonded, so the surface treatment process described above is performed before this process. Furthermore, the polar functional groups attached to each surface form covalent bonds between the functional layer 1b and the core layer 2c, resulting in a bond stronger than the bond between the catch layer C and the crystal layer 1a. Therefore, after contacting the functional layer 1b and the core layer 2c, the support substrate G is moved upward to peel the semiconductor chip 1 from the catch layer C. Through the above steps, an optical device D as shown in FIG. 14 is manufactured using the device manufacturing system 100.

[0048] (Effects of First Embodiment) Next, effects of the first embodiment will be described.

[0049] The device manufacturing system 100 of the first embodiment comprises a singulation apparatus 100b including a singulation processing unit 20 that forms multiple semiconductor chips 1 by singulating an element region forming substrate W, which has an area that will become a semiconductor chip 1, stacked on a release layer R on a transfer substrate T as described above, and a transfer apparatus 100c including a laser light irradiation unit 70 that irradiates laser light L toward the transfer substrate T from the Z1 direction opposite to the surface of the transfer substrate T on which the semiconductor chip 1 is placed, so as to peel the multiple singulated semiconductor chips 1 from the transfer substrate T and transfer them to a support substrate G, which is the target object. Furthermore, as described above, the device manufacturing method of the first embodiment includes a release layer formation process for forming a release layer R on the transfer substrate T, an arrangement process for stacking and arranging an element region formation substrate W, on which an area that will become a semiconductor chip 1 is formed, on the release layer R on the transfer substrate T, a singulation process for singulating the element region formation substrate W on the transfer substrate T, on which the release layer R and the element region formation substrate W are stacked, to form multiple semiconductor chips 1, and a laser light irradiation process for irradiating laser light L onto the transfer substrate T from the side of the transfer substrate T opposite to the surface on which the multiple semiconductor chips 1 are arranged, so that the multiple singulated semiconductor chips 1 are peeled from the transfer substrate T and transferred to the target support substrate G. As a result, the semiconductor chips 1 are formed on the transfer substrate T, which is used to transfer the semiconductor chips 1 to the target support substrate G, so that processing such as forming markers on the transfer substrate T is not required to arrange the semiconductor chips 1 formed by singulation on a substrate other than the transfer substrate T on the transfer substrate T. Therefore, time is not required for processing the transfer substrate T. Furthermore, unlike the case where a plurality of semiconductor chips 1 formed by dividing them into individual pieces in advance are placed one by one on the transfer substrate T, the semiconductor chips 1 are formed on the transfer substrate T, eliminating the need for time to place the semiconductor chips 1. Furthermore, because the semiconductor chips 1 are formed on the transfer substrate T, there is no misalignment of the plurality of semiconductor chips 1 caused by placing the semiconductor chips 1. As a result, the semiconductor chips 1 can be placed with high precision relative to the position of the support substrate G, which is the target object, in a short amount of time.

[0050] Furthermore, in the first embodiment, as described above, the release layer R is irradiated with laser light L to release the support state of the semiconductor chip 1, and the laser light irradiation unit 70 is configured to irradiate the release layer R supporting the multiple semiconductor chips 1 on the transfer substrate T with laser light L from the Z1 direction opposite to the surface of the transfer substrate T on which the semiconductor chips 1 are arranged, while the semiconductor chips 1 are not in contact with the base member 2, thereby peeling the semiconductor chips 1 from the transfer substrate T and transferring them to the target object, the support substrate G. With this configuration, unlike when the entire transfer substrate T supporting the semiconductor chips 1 is brought into contact with the target object for transfer, the semiconductor chips 1 formed on the transfer substrate T can be individually transferred to the target position with a gap provided between the semiconductor chips 1 and the base member 2.

[0051] Furthermore, in the first embodiment, as described above, the semiconductor chip 1 includes a functional layer 1b having a bonding interface bonded to the circuit substrate 2a to form an optical waveguide 2d. The singulation processing unit 20 singulates the element region formation substrate W, which is laminated on the release layer R, so that the semiconductor chip 1 is formed independently from the surrounding element region formation substrate W without providing the tether portion 1d (see FIG. 15 ) that connects the functional layer 1b to the surrounding element region formation substrate W. Here, for example, in the case of a semiconductor chip 1 used to manufacture an optical device D including an optical waveguide 2d, as shown in the comparative example of FIG. 15 , the protective layer 1c on the surface of the functional layer 1b is removed immediately before transfer to form a hollow structure in which the semiconductor chip 1 is temporarily suspended, and the substrate is singulated with the tether portion 1d. However, forming this hollow structure is extremely difficult. On the other hand, with the above configuration, the element region formation substrate W can be singulated without the tether portion 1d, making it easy to form the semiconductor chip 1. As a result, the optical device D including the optical waveguide 2d can be easily formed.

[0052] Furthermore, in the first embodiment, as described above, the singulation step forms the semiconductor chips 1 by singulating the element region formation substrate W laminated on the release layer R without processing the release layer R. With this configuration, the release layer R, which serves as a base for supporting the semiconductor chips 1, is not processed, so tilting of the semiconductor chips 1 caused by deformation due to processing of the release layer R can be suppressed. Furthermore, the release layer R can be suppressed from being transferred together with the semiconductor chips 1.

[0053] Furthermore, in the first embodiment, as described above, the singulation step involves etching or dicing the element region formation substrate W stacked on the release layer R to form a plurality of semiconductor chips 1. With this configuration, the element region formation substrate W can be easily singulated to form the semiconductor chips 1 even on the release layer R.

[0054] Furthermore, in the first embodiment, as described above, the element region formation substrate W includes a crystal layer 1a made of a compound semiconductor such as a III-V group semiconductor, or a material such as a magnetic material, and in the placement step, the element region formation substrate W in an undiced state is placed on a release layer R formed on the transfer substrate T. With this configuration, the element region formation substrate W including the crystal layer 1a can be diced, and therefore, the optical device D can be manufactured as a device using a semiconductor or a magnetic material.

[0055] Second Embodiment Next, a device manufacturing system 200 and a device manufacturing method according to a second embodiment will be described with reference to FIGS. 16 to 23. As shown in FIG. 16, the device manufacturing method according to the second embodiment is similar in configuration to the device manufacturing system 100 shown in FIG. 1, except that it does not include a post-processing device 100d. Also, in this second embodiment, as shown in FIG. 17, a method of directly transferring a semiconductor chip 1 to a base member 2 without using a support substrate G will be described. Note that a description of the second embodiment common to the first embodiment will be omitted. The following description is executed by the device manufacturing system 200 in accordance with the flow of the device manufacturing method shown in FIG.

[0056] First, in the bonding process of step S1a, the pretreatment device 100a bonds the element region formation substrate W and the transfer substrate T together to form a single unit. In the second embodiment, unlike the configuration described with reference to FIG. 8 of the first embodiment, at the time of the bonding process, the element region formation substrate W is composed only of the crystal layer 1a. Specifically, as shown in FIG. 19, the pretreatment device 100a positions the surface of the protective layer 1c of the element region formation substrate W and the release layer R formed on the surface of the transfer substrate T so that they face each other, and then moves the element region formation substrate W or the transfer substrate T so that they come into contact with each other. Because the release layer R is an adhesive material, it becomes a single unit when bonded to the protective layer 1c. Then, the process proceeds to step S2a.

[0057] In the grinding and polishing process of step S2a, the pretreatment device 100a grinds the crystal layer 1a to reduce its thickness and polishes it to remove surface irregularities using a grindstone S rotating at high speed and an abrasive, as shown in Fig. 20. Then, the process proceeds to step S3a.

[0058] In the functional layer formation process of step S3a, the pretreatment device 100a places the crystal layer 1a bonded to the release layer R formed on the transfer substrate T in a chamber (not shown) maintained at high temperature and high pressure, and performs sputtering. As a result, as shown in Figure 21, material is deposited on the surface of the crystal layer 1a to form a functional layer 1b. Note that in this second embodiment, the protective layer 1c described in the first embodiment is not formed. Then, the process proceeds to step S4a.

[0059] In the singulation process of step S4a, the singulation apparatus 100b (see FIG. 16) singulates the element region formation substrate W to form semiconductor chips 1, as shown in FIG. 22. At this time, the singulation apparatus 100b singulates the element region formation substrate W to form semiconductor chips 1 by etching and removing partitioned portions set within the element region A shown in FIG. 3. The process performed by the singulation apparatus 100b is the same as that of the first embodiment, except that the target to be masked is the functional layer 1b rather than the crystal layer 1a. Then, the process proceeds to step S5a.

[0060] In the transfer process of step S5a, the transfer device 100c (see FIG. 16) directly transfers the semiconductor chip 1 supported by the transfer substrate T via the release layer R onto the base member 2. Specifically, the control unit 80 of the transfer device 100c moves the substrate holder 40 or the stage 50 using the movement mechanism 60 based on the set position information of the semiconductor chip 1 to place it at the target position. Then, as shown in FIG. 23, the control unit 80 controls the laser light irradiation unit 70 to irradiate the laser light L so that the laser light L passes through the transfer substrate T and is irradiated onto the release layer R supporting the semiconductor chip 1. At this time, the release layer R is irradiated with the laser light L, causing ablation, which causes it to deform and expand, generating gas. As a result, the semiconductor chip 1 is released from its support by the release layer R, and is transferred by the gas to the core layer 2c of the base member 2 arranged vertically downward. This completes the manufacture of the optical device D.

[0061] (Effects of Second Embodiment) Next, effects of the second embodiment will be described.

[0062] In the device manufacturing method using the device manufacturing system 200 of the second embodiment, as described above, the element region formation substrate W includes the crystal layer 1a and the functional layer 1b formed on the surface of the crystal layer 1a, and in the placement step, the element region formation substrate W in an undivided state is placed so that the crystal layer 1a is in contact with the release layer R formed on the transfer substrate T. With this configuration, the release layer R does not come into contact with the functional layer 1b that is bonded to the base member 2, which is the target object, and therefore contamination of the functional layer 1b caused by contact with the release layer R can be suppressed.

[0063] Furthermore, as described above, the second embodiment further includes a functional layer formation step of forming a functional layer 1b on the surface of the crystal layer 1a after the placement step and before the singulation step. This configuration allows the functional layer 1b to be formed on the surface of the crystal layer 1a while the crystal layer 1a is placed on the release layer R, without using a substrate on which the functional layer 1b has been previously formed. As a result, when the semiconductor chip 1 is transferred to the base member 2, which is the target object, the functional layer 1b, which is the layer not supported by the release layer R, can be brought into contact with the base member 2, thereby facilitating the manufacture of the optical device D, which is completed by bonding the functional layer 1b to the base member 2.

[0064] The other effects of the second embodiment are the same as those of the first embodiment.

[0065] [Modifications] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive. The scope of the present invention is defined by the claims rather than the description of the above embodiments, and further includes all modifications (modifications) within the meaning and scope of the claims.

[0066] For example, in the above first and second embodiments, an example has been shown in which the release layer R is irradiated with laser light L to release the support state of the semiconductor chip 1, and the laser light irradiation unit 70 is configured to irradiate the release layer R supporting the multiple semiconductor chips 1 on the transfer substrate T with laser light L from the Z1 direction opposite to the surface of the transfer substrate T on which the semiconductor chips 1 are arranged, thereby peeling the semiconductor chips 1 from the transfer substrate T and transferring them to the target support substrate G, but the present invention is not limited to this. In the present invention, for example, the release layer R may be made of a material that does not release the support state of the semiconductor chip 1 when irradiated with laser light L, but that releases the support state of the semiconductor chip 1 when irradiated with light having a relatively strong energy such as vacuum ultraviolet light.

[0067] In the above first and second embodiments, the semiconductor chip 1 includes a functional layer 1b having a bonding interface that is bonded to the circuit board 2a to form the optical waveguide 2d, and the singulation processing unit 20 singulates the element region formation substrate W that is stacked on the release layer R so that the semiconductor chip 1 is formed independently from the surrounding element region formation substrate W without providing the functional layer 1b with tether portions 1d (see FIG. 15 ) that connect to the surrounding element region formation substrate W. However, the present invention is not limited to this. In the present invention, for example, if there is a risk that the semiconductor chip 1 will peel off naturally due to a small contact area between the semiconductor chip 1 and the release layer R, the element region formation substrate W may be singulated so that the functional layer 1b has tether portions 1d that connect to the surrounding element region formation substrate W.

[0068] In the first and second embodiments, the semiconductor chips 1 are formed by singulating the element region formation substrate W laminated on the release layer R without processing the release layer R, but the present invention is not limited to this. In the present invention, the semiconductor chips 1 may be singulated together with the release layer R.

[0069] In the first and second embodiments, the singulation step involves etching (photoetching) the element region formation substrate W stacked on the release layer R to form multiple semiconductor chips 1, but the present invention is not limited to this. In the present invention, any means may be used to singulate the element region formation substrate W. For example, the singulation apparatus 100b may perform various singulation processes, such as blade dicing, laser dicing, or dry etching, to singulate the element region formation substrate W to form the semiconductor chips 1.

[0070] In the first and second embodiments, an example is shown in which the element region formation substrate W includes at least the crystal layer 1 a, but the present invention is not limited to this. In the present invention, a substrate that does not include the crystal layer 1 a, such as a metal substrate, may also be used as the element region formation substrate.

[0071] Furthermore, in the first embodiment, an example in which the optical device D is manufactured in the following order has been described: bonding process, grinding / polishing process, singulation process, transfer process, and surface treatment process. However, the present invention is not limited to this. In the present invention, when manufacturing the optical device D, the order of the processes may be changed as appropriate. For example, the optical device D may be manufactured in the following order: grinding / polishing process, bonding process, singulation process, surface treatment process, and transfer process. In this case, as in the grinding / polishing process shown in FIG. 24 , the thickness of the crystal layer 1a is reduced before the bonding process, and as shown in FIG. 25 , the previously reduced crystal layer 1a is attached to the release layer R. Furthermore, in the singulation process shown in FIG. 26 , unlike the first embodiment, instead of masking the crystal layer 1a, a mask is applied to the protective layer 1c and etching is performed to form the semiconductor chip 1. Furthermore, in the surface treatment process shown in FIG. 27 , unlike the first embodiment, the surface treatment of the semiconductor chip 1 is performed on the transfer substrate T and release layer R, rather than on the support substrate G and catch layer C. In the transfer step shown in FIG. 28, unlike the first embodiment, the semiconductor chip 1 is transferred directly to the base member 2, not to the support substrate G and the catch layer C.

[0072] In the second embodiment, the element region formation substrate W includes a crystal layer 1a and a functional layer 1b formed on the surface of the crystal layer 1a, and the arrangement step is an example in which the element region formation substrate W in an undiced state is arranged so that the crystal layer 1a contacts the release layer R formed on the transfer substrate T. However, the present invention is not limited to this. In the present invention, the element region formation substrate W in an undiced state may be arranged so that the functional layer 1b or the protective layer 1c contacts the release layer R formed on the transfer substrate T.

[0073] In the second embodiment, the functional layer forming step of forming the functional layer 1 b on the surface of the crystal layer 1 a after the arrangement step and before the singulation step is described as an example, but the present invention is not limited to this. In the present invention, an element region forming substrate W may be used in which the functional layer 1 b is formed in advance on the surface of the crystal layer 1 a.

[0074] In the first and second embodiments, the crystal layer 1a is formed of a compound semiconductor such as a III-V semiconductor or a magnetic material, but this is not a limitation of the present invention. In the present invention, the crystal layer 1a and the functional layer 1b may be formed of any material, such as lithium niobate (LN). As an example of the crystal layer 1a and the functional layer 1b, a functional layer 1f, which is a metal circuit pattern, may be formed by sputtering on the surface of the crystal layer 1e, which is a Si substrate, as shown in a modified example of the second embodiment shown in FIG. 29. In this case, as shown in FIG. 30, unlike the second embodiment, the crystal layer 1e is etched (diced) without etching (dicing) the functional layer 1f, thereby forming the semiconductor chips 1.

[0075] Furthermore, while the first and second embodiments described above illustrate examples of manufacturing an optical device D, the present invention is not limited to this. In the present invention, the device to be manufactured is not limited to the optical device D. For example, as in a modified example of the second embodiment shown in FIG. 31 , a circuit element D2 may be manufactured in which a functional layer 1 f, which is a circuit pattern formed on the crystal layer 1 a, is bonded to a circuit pattern 2 f formed on a circuit board 2 e. In this case, as shown in FIG. 32 , a transfer process is performed to transfer the functional layer 1 f, which is a circuit pattern formed on the crystal layer 1 a, to a circuit pattern 2 f formed on the circuit board 2 e and protected by flux F, which also functions as a bonding agent, and the circuit element D2 is formed by bonding by soldering.

[0076] Furthermore, in the above-described first and second embodiments, an example was shown in which the transfer substrate T was formed of polyimide or silicon and had a release layer R as an adhesive material, but the present invention is not limited to this. In the present invention, any layer may be formed on the transfer substrate T as long as it is capable of supporting the semiconductor chip 1 and can release the supported state of the semiconductor chip 1 by irradiation with laser light L. For example, the transfer substrate T may be a sapphire substrate, and a release layer R made of an inorganic material such as GaN (gallium nitride) crystal-grown on the sapphire substrate may be formed to support the semiconductor chip 1.

[0077] In the first and second embodiments, an example is shown in which a thick element region formation substrate W is ground and polished and then singulated to form thin semiconductor chips 1, but the present invention is not limited to this. In the present invention, the semiconductor chips 1 may be formed using a thin element region formation substrate W from the beginning.

[0078] In the first and second embodiments, an example is shown in which an element having a small thickness, ie, a thickness t2 of less than 1 μm, is used as the semiconductor chip 1, but the present invention is not limited to this. In the present invention, for example, various semiconductor elements, including thick semiconductor elements, may be used as the semiconductor chip 1.

[0079] In the first and second embodiments, examples have been shown in which the transfer substrate T and the support substrate G are made of transparent substrates that are not flexible, such as SiO2 (silicon dioxide) substrates or sapphire substrates, but the present invention is not limited to this. In the present invention, the transfer substrate T and the support substrate G may be made of flexible materials, such as resin films.

[0080] In the first and second embodiments, the moving mechanism 60 is configured to be able to move both the substrate holding unit 40 and the stage 50, but the present invention is not limited to this. For example, the moving mechanism 60 may be provided separately for the substrate holding unit 40 and the stage 50.

[0081] 7 to 14, if the outermost layer of the element 1, which corresponds to the crystal layer 1a in FIG. 8, is not used as a component of the device to be manufactured (if only the portion corresponding to the functional layer 1b is used in the device), a step of peeling the crystal layer 1a from the functional layer 1b may be provided before the singulation step of step S4, so that the crystal layer 1a can be reused. In this case, a layer that facilitates peeling may be provided between the crystal layer 1a and the functional layer 1b.

[0082] DESCRIPTION OF SYMBOLS 1 Semiconductor chip (element) 1a, 1e Crystal layer 1b, 1f Functional layer 1c Protective layer 1d Tether 2 Base member 2a, 2e Circuit board 2b Cladding layer 2c Core layer 2d Waveguide 10 Stage (of singulation device) 20 Singulation processing unit 30 Control unit (of singulation device) 40 Substrate holding unit 50 Stage (of transfer device) 60 Position adjustment mechanism 70 Laser light irradiation unit 80 Control unit (of transfer device) 100, 200 Device manufacturing system 100b Singulation device 100c Transfer device A Element formation area C Catch layer L Laser light R Release layer (support layer) T Transfer substrate W Element area formation substrate

Claims

1. A device manufacturing system comprising: a singulation apparatus including a singulation processing unit that singulates an element region formation substrate, on which an element region is formed, in a state in which the element region formation substrate is stacked and arranged on a support layer on a transfer substrate, to form a plurality of the elements; and a transfer apparatus including a laser light irradiation unit that irradiates laser light toward the transfer substrate from the side opposite to the surface on which the elements are arranged, so as to peel the singulated plurality of elements from the transfer substrate and transfer them to an object.

2. The device manufacturing system of claim 1, wherein the support layer includes a release layer that releases the support state of the elements when irradiated with the laser light, and the laser light irradiation unit is configured to peel the elements from the transfer substrate and transfer them to the object by irradiating the laser light onto the release layer that supports the multiple elements on the transfer substrate from the side opposite to the surface of the transfer substrate on which the elements are placed, while the elements and the object are not in contact.

3. The device manufacturing system according to claim 1, wherein the element includes a functional layer having a bonding interface that is bonded to a circuit board to form an optical waveguide, and the singulation processing unit singulates the element region formation substrate that is stacked on the support layer so that the element is formed independently from the surrounding element region formation substrate without providing the functional layer with a tether portion that connects to the surrounding element region formation substrate.

4. A device manufacturing method comprising: an arrangement step of stacking and arranging an element region formation substrate, on which an element region has been formed, onto a support layer formed on a transfer substrate; a singulation step of forming a plurality of elements by singulating the element region formation substrate on the transfer substrate, on which the support layer and the element region formation substrate have been stacked; and a laser light irradiation step of irradiating the transfer substrate with laser light from the side opposite to the surface on which the plurality of elements are arranged, so as to peel the singulated elements from the transfer substrate and transfer them to an object.

5. A device manufacturing method according to claim 4, wherein the singulation step forms the elements by singulating the element region formation substrate laminated on the support layer without processing the support layer.

6. A device manufacturing method according to claim 4, wherein the singulation step forms the plurality of elements by etching or dicing the element region formation substrate laminated on the support layer.

7. A device manufacturing method according to claim 4, wherein the element includes a functional layer having a bonding interface that is bonded to a circuit board to form an optical waveguide, and the singulation step singulates the element region formation substrate that is stacked on the support layer so that the element is formed independently from the surrounding element region formation substrate without providing the functional layer with a tether portion that connects to the surrounding element region formation substrate.

8. A device manufacturing method as described in claim 4, wherein the support layer includes a release layer that is irradiated with the laser light to release the support state of the element, and the laser light irradiation step irradiates the laser light onto the release layer that supports the element on the transfer substrate from the side opposite to the surface of the transfer substrate on which the element is placed, thereby peeling the element from the transfer substrate and transferring it to an object.

9. A device manufacturing method according to claim 4, wherein the element region formation substrate includes a crystalline layer made of a semiconductor or a magnetic material, and the placement step places the element region formation substrate in an undivided state on the support layer formed on the transfer substrate.

10. A device manufacturing method as described in claim 9, wherein the element region formation substrate includes the crystal layer and a functional layer formed on the surface of the crystal layer, and the placement step places the element region formation substrate in an undivided state so that the crystal layer is in contact with the support layer formed on the transfer substrate.

11. The device manufacturing method according to claim 10, further comprising a functional layer forming step of forming the functional layer on the surface of the crystal layer after the placing step and before the singulation step.

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