Rubber member, and semiconductor manufacturing–related device

Abstract

The present invention provides a rubber member having excellent corrosion resistance and a semiconductor manufacturing–related device using the same. Provided is a rubber member that includes a halogen-based rubber containing at least one element selected from the group consisting of chlorine, bromine, and iodine, the rubber member being at least one member selected from the group consisting of building material members, mobility members, aerospace members, semiconductor members, and information communication members, and the rubber member coming into contact with a corrosive substance.

Description

Rubber materials and semiconductor manufacturing related equipment

[0001] The present disclosure relates to a rubber member and a semiconductor manufacturing-related device.

[0002] In applications such as rubber rollers, the use of chlorinated polyolefin compositions has been proposed to improve durability (see, for example, Patent Documents 1 and 2).

[0003] JP 2023-96824 A International Publication No. 2022 / 145447

[0004] An object of the present disclosure is to provide a rubber member having excellent corrosion resistance and a semiconductor manufacturing-related device using the same.

[0005] The present disclosure (1) relates to a rubber member including a halogen-based rubber containing at least one selected from the group consisting of chlorine, bromine, and iodine, the rubber member being at least one selected from the group consisting of building materials, mobility materials, aerospace materials, semiconductor materials, and information and communications materials, and being a rubber member that comes into contact with a corrosive substance.

[0006] The present disclosure (2) is the rubber member according to the present disclosure (1), wherein the halogen-based rubber is at least one selected from the group consisting of chlorosulfonated ethylene rubber and chlorinated polyethylene rubber.

[0007] The present disclosure (3) is the rubber member according to the present disclosure (1) or (2), which contains at least one acid acceptor selected from the group consisting of lead compounds and epoxy compounds.

[0008] The present disclosure (4) is the rubber member according to the present disclosure (3), wherein the acid acceptor is at least one selected from the group consisting of lead oxide and epoxidized polybutadiene.

[0009] The present disclosure (5) is the rubber member according to the present disclosure (3) or (4), wherein the halogen-based rubber contains 1 to 35% by mass of the acid acceptor.

[0010] The present disclosure (6) is the rubber member according to the present disclosure (3) or (4), wherein the halogen-based rubber contains 10 to 30% by mass of the acid acceptor.

[0011] The present disclosure (7) is a rubber member in any combination with any of the present disclosures (1) to (6), in which the halogen-based rubber is crosslinked with a peroxide crosslinking agent and / or a sulfur-based crosslinking agent.

[0012] The present disclosure (8) is a rubber member in any combination with any of the present disclosures (1) to (7), wherein the rubber member is at least one selected from the group consisting of a container, a pipe, a nozzle, a tube, a tank, a joint, a valve, a pump, a spin chuck, an O-ring, a packing, a gasket, a washer, and a sealing material.

[0013] The present disclosure (9) is a rubber member in any combination with any of the present disclosures (1) to (8), wherein the rubber member is at least one selected from the group consisting of a container, a pipe, a nozzle, a tube, a tank, a joint, a valve, a pump, a spin chuck, an O-ring, a gasket, a washer, and a sealing material.

[0014] The present disclosure (10) is a rubber member in any combination with any of the present disclosures (1) to (9), wherein the corrosive substance has a pH of 6 or less or 8 or more.

[0015] The present disclosure (11) is a rubber member in any combination with any of the present disclosures (1) to (10), in which the oxidation-reduction potential (vs. NHE) of the corrosive substance is −2.0 to 3.0 V.

[0016] The present disclosure (12) is a rubber member in any combination with any of the present disclosures (1) to (11), wherein the corrosive substance is at least one selected from the group consisting of an acidic substance, a basic substance, an oxidizing substance, an organic solvent, and salt water.

[0017] The present disclosure (13) is the rubber member according to the present disclosure (12), wherein the acidic substance is at least one selected from the group consisting of sulfuric acid, hydrofluoric acid, nitric acid, phosphoric acid, hydrochloric acid, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide and hydrochloric acid, and a mixed chemical solution of hydrogen peroxide and sulfuric acid.

[0018] The present disclosure (14) is directed to a method for preparing a tetrahydrofuran (TMAH)-based tertiary ammonium hydroxide solution, wherein the basic substance is TMAH([(CH ３ ) ４ N] ＋ [OH] －), a sodium hydroxide aqueous solution, ammonia water, and a mixed chemical solution of hydrogen peroxide water and ammonia water, is at least one selected from the group consisting of the rubber member according to the present disclosure (12) or (13).

[0019] The present disclosure (15) is directed to a method for treating a corrosive substance, which is characterized in that the corrosive substance is hydrofluoric acid, nitric acid, phosphoric acid, hydrochloric acid, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide and hydrochloric acid, a mixed chemical solution of hydrogen peroxide and sulfuric acid, TMAH([(CH ３ ) ４ N] ＋ [OH] － ), a sodium hydroxide aqueous solution, a mixed chemical solution of hydrogen peroxide and ammonia water, and at least one selected from the group consisting of isopropyl alcohol. A rubber member in any combination with any of the rubber members of the present disclosure (1) to (14).

[0020] The present disclosure (16) is a rubber member in any combination with any of the present disclosures (1) to (15), wherein the rubber member is a member for semiconductor manufacturing related equipment.

[0021] The present disclosure (17) is the rubber member according to the present disclosure (16), wherein the semiconductor manufacturing related device is a device in which a chemical is used.

[0022] The present disclosure (18) is a rubber member obtained by any combination with any of the present disclosures (1) to (17), in which a test piece (size: 10 mm x 50 mm x 2 mm) of the rubber member is immersed in each of the following four chemical solutions for one week, and the relative value of the mass after immersion, where the mass before immersion is 100, is 60 to 140. (Chemical solution) 25 mass% TMAH([(CH ３ ) ４ N] ＋ [OH] － ) (80°C) 49% by mass hydrofluoric acid (70°C) Mixed acid of hydrofluoric acid and nitric acid (a mixture of 49% by mass hydrofluoric acid and 69-71% by mass nitric acid in a volume ratio of 1:100) (20°C) SPM (a mixture of 98% by mass sulfuric acid and 30-36% by mass hydrogen peroxide in a volume ratio of 2:1) (80°C)

[0023] The present disclosure (19) is a rubber member in any combination with any of the present disclosures (1) to (18), in which a test piece (size: 10 mm x 50 mm x 2 mm) of the rubber member is immersed in each of the following nine chemical solutions for one week, and the relative values ​​of the mass after immersion are calculated, with the mass before immersion being 100. The average of the relative values ​​for the nine chemical solutions is 80 to 120, and the standard deviation is 20 or less. (Chemical solution) 25 mass% TMAH([(CH ３ ) ４ N] ＋ [OH] － ) (80°C) 100% by mass isopropyl alcohol (80°C) 49% by mass hydrofluoric acid (70°C) Mixed acid of hydrofluoric acid and nitric acid (a mixture of 49% by mass hydrofluoric acid and 69 to 71% by mass nitric acid in a volume ratio of 1:5) (20°C) Mixed acid of hydrofluoric acid and nitric acid (a mixture of 49% by mass hydrofluoric acid and 69 to 71% by mass nitric acid in a volume ratio of 1:100) (20°C) SPM (a mixture of 98% by mass sulfuric acid and 30 to 36% by mass hydrogen peroxide solution in a volume ratio of 2:1) (80°C) SC1 (a mixture of 25 to 28% by mass ammonia water, 30 to 36% by mass hydrogen peroxide solution, and deionized water in a volume ratio of 1:1:5) (70°C) SC2 (a mixture of 35 to 37% by mass hydrochloric acid, 30 to 36% by mass hydrogen peroxide solution, and deionized water in a volume ratio of 1:1:4) (70°C) 85% by mass phosphoric acid (80°C)

[0024] The present disclosure (20) is a rubber member in any combination with any of the present disclosures (1) to (19), in which when a test piece (size: 10 mm × 50 mm × 2 mm) of the rubber member is immersed in 3.6 mass % hydrochloric acid at 23°C for one week, the amount of metal elution of each of 14 elements (Li, Na, Mg, Al, K, Ti, Cr, Mn, Fe, Ni, Cu, Zn, Ag, Cd) is 30 ppb or less.

[0025] The present disclosure (21) is a rubber member in any combination with any of the present disclosures (1) to (20), in which the amount of metal elution of two elements (Ca, Pb) is 10,000 ppb or less when a test piece (size: 10 mm × 50 mm × 2 mm) of the rubber member is immersed in 3.6 mass% hydrochloric acid at 23°C for one week.

[0026] The present disclosure (22) is a rubber member in any combination with any of the present disclosures (1) to (21), in which when a test piece (size: 10 mm × 50 mm × 2 mm) of the rubber member is immersed in 3.6 mass % hydrochloric acid at 23°C for one week, the amount of metal elution of 16 elements (Li, Na, Mg, Al, K, Ca, Ti, Cr, Mn, Fe, Ni, Cu, Zn, Ag, Cd, Pb) is 10,000 ppb or less.

[0027] The present disclosure (23) is a semiconductor manufacturing-related device equipped with a rubber member in any combination with any of the present disclosures (1) to (22).

[0028] The present disclosure (24) is a semiconductor manufacturing related device of the present disclosure (23), which is at least one selected from the group consisting of semiconductor manufacturing devices and devices related to semiconductor manufacturing devices.

[0029] The present disclosure (25) is the semiconductor manufacturing-related equipment of the present disclosure (24), wherein the semiconductor manufacturing equipment is at least one selected from the group consisting of a photolithography process equipment, a thin film formation / etching / cleaning / drying equipment, an inspection / evaluation equipment / manufacturing equipment, a resist processing equipment, an etching equipment, a cleaning / drying equipment, a CVD equipment, a thin film formation equipment, a CMP equipment, a processing equipment, an aging equipment, and an inspection equipment, and the semiconductor manufacturing equipment-related equipment is at least one selected from the group consisting of a pure water / chemical equipment, a gas equipment, a clean room equipment, and a manufacturing-related equipment.

[0030] The present disclosure (26) is directed to a photolithography process apparatus in which the photolithography process apparatus is at least one selected from the group consisting of a coating apparatus, a resist stripping apparatus, a developing apparatus (developer), and a descum apparatus; the thin film formation / etching / cleaning / drying apparatus is at least one selected from the group consisting of a vacuum deposition apparatus, a cleaning apparatus, a drying apparatus, and a scrub cleaning apparatus; the inspection / evaluation apparatus / manufacturing apparatus is a defect repair apparatus; the resist processing apparatus is at least one selected from the group consisting of a coating apparatus, a developing apparatus, a resist stripping apparatus, and an ashing apparatus; the etching apparatus is at least one selected from the group consisting of a dry etching apparatus and a wet etching apparatus; the cleaning / drying apparatus is at least one selected from the group consisting of a wet cleaning apparatus, a scrub cleaning apparatus, and a drying apparatus; the CVD apparatus is at least one selected from the group consisting of a high-pressure CVD apparatus, a SACVD apparatus, a low-pressure CVD apparatus, a plasma CVD apparatus, a metal CVD apparatus, and an ALD apparatus; the thin film forming apparatus is at least one selected from the group consisting of a vacuum deposition apparatus, a silicon epitaxial growth apparatus, a compound semiconductor epitaxial apparatus (MOCVD apparatus, MBE apparatus), and a plating apparatus; the CMP apparatus is at least one selected from the group consisting of a CMP apparatus and a CMP cleaning apparatus; the processing apparatus is a bump plating apparatus; the aging apparatus is at least one selected from the group consisting of an aging apparatus, a burn-in apparatus, an IC insertion apparatus, and an IC extraction apparatus; the inspection apparatus is a life test apparatus; the pure water / chemical liquid apparatus is at least one selected from the group consisting of a chemical supply apparatus, a slurry supply apparatus, a chemical purification apparatus, and a waste liquid treatment apparatus; the gas apparatus is at least one selected from the group consisting of a gas generation apparatus, a gas purification apparatus, a gas mixing apparatus, a gas detection apparatus, and an exhaust gas treatment apparatus; the clean room apparatus is at least one selected from the group consisting of a thermal chamber and an environmental test apparatus; The manufacturing-related equipment is at least one selected from the group consisting of a jig cleaning / drying device, a flow control device, a packaging device, and a measuring device for liquids and gases.

[0031] According to the present disclosure, it is possible to provide a rubber member having excellent corrosion resistance and a semiconductor manufacturing-related device using the same.

[0032] The present disclosure will be specifically described below.

[0033] The present disclosure relates to a rubber member containing a halogen-containing rubber containing at least one selected from the group consisting of chlorine, bromine, and iodine, the rubber member being at least one selected from the group consisting of construction materials, mobility materials, aerospace materials, semiconductor materials, and information and communications materials, and which comes into contact with corrosive substances. The rubber member of the present disclosure has excellent corrosion resistance (particularly chemical resistance).

[0034] The rubber member of the present disclosure can also suppress metal elution.

[0035] The rubber member of the present disclosure includes a halogen-based rubber containing at least one element selected from the group consisting of chlorine, bromine, and iodine. The halogen-based rubber preferably contains at least one element selected from the group consisting of chlorine and bromine, and more preferably contains chlorine. The halogen-based rubber preferably does not contain fluorine.

[0036] Examples of the halogen-containing rubber include chlorosulfonated olefin rubbers such as chlorosulfonated ethylene rubber (CSM); chlorinated polyolefin rubbers such as chlorinated polyethylene rubber (CM); halogenated butyl rubbers such as chlorinated butyl rubber (CIIR) and brominated butyl rubber (BIIR); epichlorohydrin rubber (ECO) and chloroprene rubber (CR), and one or more of these may be used. As the halogen-containing rubber, from the viewpoints of further improving corrosion resistance and further suppressing metal elution, at least one selected from the group consisting of chlorosulfonated olefin rubber and chlorinated polyolefin rubber is preferred, with chlorosulfonated olefin rubber being more preferred. From the same viewpoint, at least one selected from the group consisting of chlorosulfonated ethylene rubber and chlorinated polyethylene rubber is preferred, with chlorosulfonated ethylene rubber being more preferred.

[0037] The halogen-based rubber has a high Mooney viscosity (ML １＋４ The Mooney viscosity (100°C) is preferably 10 or more, more preferably 20 or more, even more preferably 30 or more, and even more preferably 40 or more, and is preferably 200 or less, more preferably 170 or less. The Mooney viscosity is measured in accordance with ASTM D 1646.

[0038] The halogen-based rubber has a high Mooney viscosity (ML １＋４ The Mooney viscosity (121°C) is preferably 10 or more, more preferably 20 or more, even more preferably 30 or more, and even more preferably 40 or more, and is preferably 200 or less, more preferably 170 or less. The Mooney viscosity is measured in accordance with ASTM D 1646.

[0039] The chlorosulfonated olefin rubber has a chlorosulfone group (—SO ) in the polyolefin main chain. ２ Chlorosulfonated olefin rubber is a polymer having a structure in which chlorosulfonated olefins (Cl) and chlorine are bonded. Chlorosulfonated olefin rubber can be obtained by chlorosulfonating and chlorinating polyolefins.

[0040] The polyolefin is a polymer having monomer units derived from an olefin, and examples of the olefin include ethylene, propylene, 1-butene, 1-pentene, 1-hexene, 4-methyl-1-pentene, 1-octene, and 1-decene.

[0041] The polyolefin is preferably a polyolefin having at least ethylene and / or propylene as a monomer unit. For example, a homopolymer of ethylene or propylene or a copolymer of ethylene and / or propylene is preferred, and more preferred are, for example, polyethylene, polypropylene, ethylene-α-olefin copolymer, ethylene-vinyl compound copolymer, etc. Examples of the α-olefin include propylene, 1-butene, 1-pentene, 1-hexene, 4-methyl-1-pentene, 1-octene, 1-decene, etc. Examples of the vinyl compound include vinyl acetate, vinyl alcohol, acrylic acid, methyl methacrylate, vinyl chloride, acrylonitrile, styrene, vinylcyclohexane, N-isopropylacrylamide, acrolein, vinylene carbonate, maleic anhydride, etc.

[0042] The polyolefin may be copolymerized with other polymerizable components, such as linear dienes such as 1,3-butadiene, isoprene, 1,4-hexadiene, 1,6-octadiene, 2-methyl-1,5-hexadiene, 6-methyl-1,5-heptadiene, and 7-methyl-1,6-octadiene; and cyclic dienes such as 1,3-cyclohexadiene, 1,4-cyclohexadiene, dicyclopentadiene, 5-vinyl-2-norbornene, 5-ethylidene-2-norbornene, 5-methylene-2-norbornene, and 5-isopropylidene-2-norbornene.

[0043] The polyolefin is preferably polyethylene, and the chlorosulfonated olefin rubber is preferably chlorosulfonated ethylene rubber (chlorosulfonated polyethylene).

[0044] Chlorosulfonated olefin rubber can be produced by reacting the above polyolefin with chlorine and sulfur dioxide gas, or by reacting the above polyolefin with sulfuryl chloride in the presence of an amine.

[0045] The chlorine content in the chlorosulfonated olefin rubber is not particularly limited, but from the viewpoint of further improving corrosion resistance and rubber elasticity, it is preferably 5 to 60 mass%, more preferably 10 to 50 mass%, and particularly preferably 20 to 45 mass%. Furthermore, the sulfur content in the chlorosulfonated olefin rubber is not particularly limited, but it is preferably 0.1 to 5 mass%, more preferably 0.4 to 3 mass% or more, and particularly preferably 0.6 to 2 mass%. The chlorine content and sulfur content can be calculated by elemental analysis.

[0046] The chlorinated polyolefin rubber is obtained by chlorinating a polyolefin. Examples of polyolefins include homopolymers of α-olefins having 2 to 10 carbon atoms, such as polyethylene and polypropylene, or copolymers of two or more α-olefins, such as block copolymerized polypropylene and random copolymerized polypropylene. Among these, non-sulfonated polyolefins are more preferred, and polyethylene is particularly preferred. That is, chlorinated polyethylene rubber is particularly preferred as the chlorinated polyolefin rubber. It is preferable that the chlorinated polyolefin rubber does not have hydrogen atoms substituted with atoms other than halogen atoms.

[0047] The chlorination of polyolefin can be carried out, for example, by introducing chlorine gas into an aqueous suspension of polyolefin.

[0048] The chlorine content of the chlorinated polyolefin rubber is preferably 25% by mass or more, more preferably 30% by mass or more, even more preferably 35% by mass or more, and even more preferably 38% by mass or more, and is preferably 50% by mass or less, more preferably 45% by mass or less, and even more preferably 43% by mass or less, in terms of further improving corrosion resistance and further suppressing metal elution. The chlorine content is measured by heating and burning a sample with the flame of a gas burner in a glass tube, dehydrochlorinating and decomposing the sample, absorbing the generated hydrochloric acid gas into distilled water, and neutralizing titrating it with a 0.1 mol / L normal solution of sodium hydroxide.

[0049] The chlorinated polyolefin rubber has a high Mooney viscosity (ML １＋４ The Mooney viscosity (121°C) is preferably 30 or more, more preferably 50 or more, and even more preferably 55 or more, and is preferably 140 or less, more preferably 130 or less, and even more preferably 120 or less. The Mooney viscosity is measured in accordance with ASTM D 1646.

[0050] The weight average molecular weight Mw of the chlorinated polyolefin rubber is preferably 100,000 or more, more preferably 150,000 or more, and is preferably 300,000 or less, more preferably 250,000 or less. When Mw is within this range, the Mooney viscosity can be adjusted to the above range, making it easier to obtain desired properties. The weight average molecular weight is the average molecular weight calculated in terms of polystyrene by gel permeation chromatography (GPC, eluent: tetrahydrofuran, temperature: 38°C).

[0051] The chlorinated polyolefin rubber is preferably amorphous. In this specification, "amorphous" means that the heat of crystalline fusion measured by using a differential scanning calorimeter to raise the temperature of a measurement sample from 30°C at a heating rate of 10°C per minute is 2.0 J / g or less.

[0052] The halogen-containing rubber is usually crosslinked. Although the crosslinking method is not limited, crosslinking with a peroxide crosslinking agent and / or a sulfur-based crosslinking agent is preferred, and crosslinking with a peroxide crosslinking agent is more preferred, in terms of further improving corrosion resistance and further suppressing metal elution.

[0053] As the peroxide crosslinking agent, known peroxides can be used, and organic peroxides are preferred. Examples of the organic peroxides include diacyl peroxides such as benzoyl peroxide, dibenzoyl peroxide, p-chlorobenzoyl peroxide, stearoyl peroxide, lauroyl peroxide, and 4-methylbenzoyl peroxide; 1-butyl peroxyacetate, t-butyl peroxybenzoate, t-butyl peroxyphthalate, t-butyl peroxymaleic acid, t-butyl peroxylaurate, t-hexyl peroxybenzoate, and 2,5 peroxy esters such as 1,1-dimethyl-2,5-di(benzoylperoxy)hexane and di-t-butylperoxy isophthalate; methyl ethyl ketone peroxide, 1,1-bis(t-butylperoxy)2-methylcyclohexane, 1,1-bis(t-hexylperoxy)-3,3,5-trimethylcyclohexane, 1,1-bis(t-hexylperoxy)cyclohexane, 1,1-bis(t-butylperoxy)-3,3,5-trimethylcyclohexane, 1,1-bis(t-butylperoxy)- peroxyketals such as di-t-butylperoxy)cyclohexane and n-butyl-4,4-bis(t-butylperoxy)valerate; di-t-butylperoxybenzoate, 1,3-bis(1-butylperoxyisopropyl)benzene, dicumyl peroxide, t-butylcumyl peroxide, 2,5-dimethyl-2,5-di(t-butylperoxy)hexane (trade name: Perhexa (registered trademark) 25B), α,α'-bis(t-butylperoxy)diisopropylbenzene (trade name: Perbutyl (registered trademark) dialkyl peroxides such as 2,5-dimethyl-2,5-di(t-butylperoxyl)hexyne-3 (trade name: Perhexyne (registered trademark) P, Peroximon F-40), and 2,5-dimethyl-2,5-di(t-butylperoxyl)hexyne-3 (trade name: Perhexyne (registered trademark) 25B-40); hydroperoxides such as t-butyl hydroperoxide; and monoperoxycarbonates such as t-hexylperoxyisopropyl monocarbonate, t-butylperoxyisopropyl monocarbonate, and t-butylperoxy-2-ethylhexyl monocarbonate.

[0054] Among these, organic peroxides having a one-minute half-life temperature of 130°C or higher are preferred. The one-minute half-life temperature of an organic peroxide is the temperature at which the organic peroxide decomposes and reduces to half of the initial amount of active oxygen in one minute. The measurement method is not particularly limited, but it can be determined, for example, by determining the half-life of an organic peroxide at a peroxide concentration of 0.10 mol / L at multiple temperatures in a solvent relatively inert to radicals (such as benzene) and plotting the data.

[0055] As the sulfur-based crosslinking agent, known agents can be used, such as elemental sulfur and sulfur compounds.

[0056] The amount of the crosslinking agent used is preferably 0% by mass or more, more preferably 0.5% by mass or more, and even more preferably 3.0% by mass or more, relative to the uncrosslinked halogen-based rubber, and is preferably 20% by mass or less, more preferably 15% by mass or less, and even more preferably 10% by mass or less.

[0057] The rubber member of the present disclosure preferably further contains an acid acceptor. Examples of known acid acceptors that can be used include lead compounds such as lead oxide and red lead; magnesium compounds such as magnesium oxide; epoxy compounds such as epoxidized polybutadiene, aliphatic glycidyl ether, epoxidized oil, and epichlorohydrin derivatives; and hydrotalcite. Among these, at least one selected from the group consisting of lead compounds and epoxy compounds is preferred in terms of further improving corrosion resistance, and epoxy compounds are more preferred in terms of further suppressing metal elution. From the same perspective, at least one selected from the group consisting of lead oxide and epoxidized polybutadiene is preferred, and epoxidized polybutadiene is more preferred.

[0058] The epoxidized polybutadiene is not particularly limited, but examples thereof include epoxy-modified polybutadiene. Compounds in which epoxy groups have been introduced by oxidation of vinyl groups are particularly preferred. Commercially available products include NISSO-PB (registered trademark) JP-100 and JP-200 (both manufactured by Nippon Soda Co., Ltd.), Epolead (registered trademark) PB3600 and 4700 (both manufactured by Daicel Corporation), Adeka Cizer (registered trademark) BF-1000 (manufactured by ADEKA Corporation), and Ricon (registered trademark) 657 (manufactured by Cray Valley Chemical Industries, Ltd.), and these may be used alone or in combination of two or more. Triazine-crosslinked epoxidized polybutadiene may also be used.

[0059] The number average molecular weight of the epoxidized polybutadiene is preferably 500 or more, more preferably 1000 or more, even more preferably 1100 or more, even more preferably 1200 or more, and particularly preferably 2000 or more, and is preferably 50000 or less, more preferably 10000 or less, even more preferably 8000 or less, even more preferably 6000 or less, and particularly preferably 5000 or less. The number average molecular weight of the epoxidized polybutadiene is measured in terms of polystyrene by gel permeation chromatography (GPC, eluent: tetrahydrofuran, temperature: 40°C).

[0060] The epoxy equivalent of the epoxidized polybutadiene is preferably 50 or more, more preferably 100 or more, and even more preferably 140 or more, and is preferably 400 or less, and more preferably 300 or less. The epoxy equivalent of the epoxidized polybutadiene is measured in accordance with JIS K7236 (2001).

[0061] The content of the acid acceptor is preferably 1% by mass or more, more preferably 3% by mass or more, even more preferably 5% by mass or more, and even more preferably 10% by mass or more, relative to the halogen-based rubber, and is preferably 50% by mass or less, more preferably 35% by mass or less, and even more preferably 30% by mass or less.

[0062] The rubber member of the present disclosure may further contain a processing aid. Examples of the processing aid include fatty acid esters, fatty acid zinc salts, and pentaerythritol. Among these, fatty acid esters are preferred in terms of further suppressing metal elution and non-reactivity with epoxy compounds.

[0063] The content of the processing aid relative to the halogen-based rubber may be 0% by mass, is preferably 1% by mass or more, more preferably 2% by mass or more, and even more preferably 3% by mass or more, and is preferably 10% by mass or less, more preferably 7% by mass or less, and even more preferably 5% by mass or less.

[0064] The rubber member of the present disclosure may further contain a cross-linking aid. Examples of the cross-linking aid include thiazole-based vulcanization accelerators, thiuram-based vulcanization accelerators, guanidine-based vulcanization accelerators, triallyl isocyanurate, and dithiocarbamate salts. Among them, from the viewpoint of corrosion resistance, at least one selected from the group consisting of thiazole-based vulcanization accelerators, thiuram-based vulcanization accelerators, guanidine-based vulcanization accelerators, and triallyl isocyanurate is preferred, a combination of two selected from the group consisting of thiazole-based vulcanization accelerators, thiuram-based vulcanization accelerators, and guanidine-based vulcanization accelerators, and triallyl isocyanurate is more preferred, and a combination of three selected from thiazole-based vulcanization accelerators, thiuram-based vulcanization accelerators, and guanidine-based vulcanization accelerators, and triallyl isocyanurate is even more preferred. When a sulfur-based cross-linking aid is used, the active sulfur generated from the cross-linking aid can also function as a cross-linking agent.

[0065] The content of the crosslinking aid relative to the halogen-based rubber is preferably 0% by mass or more, more preferably 0.5% by mass or more, and even more preferably 1.0% by mass or more, and is preferably 10% by mass or less, and more preferably 5% by mass or less.

[0066] The rubber member of the present disclosure may further include a reinforcing material (filler). While the reinforcing material is not particularly limited, specific examples include carbon black, silica, calcium carbonate, talc, clay, aluminum hydroxide, magnesium hydroxide, magnesia, etc., with carbon black and silica being more preferred due to their excellent abrasion resistance. These reinforcing materials may be surface-treated for purposes such as antistatic properties.

[0067] The content of the reinforcing material is preferably 100 parts by mass or less, more preferably 70 parts by mass or less, and even more preferably 50 parts by mass or less, per 100 parts by mass of the halogen-based rubber, and is preferably 0 part by mass or more, more preferably 10 parts by mass or more, and even more preferably 20 parts by mass or more.

[0068] The rubber member of the present disclosure may further contain a plasticizer. Plasticizers commonly used for polyvinyl chloride can be used as the plasticizer. Specific examples include alkylsulfonic acid phenyl ester (trade name Mesamoll (registered trademark)); dimethyl phthalate, diethyl phthalate, dibutyl phthalate, diheptyl phthalate, di-n-octyl phthalate, 2-ethylhexyl phthalate (hereinafter sometimes abbreviated as DOP), isononyl phthalate, octyldecyl phthalate, butyl benzyl phthalate, dicyclohexyl phthalate, n-octyl tetrahydrophthalate, di-2-ethylhexyl tetrahydrophthalate, Phthalate ester plasticizers such as diisodecyl tetrahydrofuranate; aliphatic monobasic acid ester plasticizers such as butyl oleate and glycerin monooleate; dibutyl adipate, di-n-hexyl adipate, di-2-ethylhexyl adipate, diisononyl adipate, diisodecyl adipate, dialkyl adipate 610, dibutyl diglycol adipate, di-2-ethylhexyl azelaate, di-n-hexyl azelaate, dibutyl sebacate, sebacic acid ester, diisodecyl hydroxybenzoate ... aliphatic dibasic ester plasticizers such as di-2-ethylhexyl phosphate; trimellitic ester plasticizers such as trialkyl (C4-11) trimellitate, cyclohexene carboxylic acid ester, trioctyl trimellitate, and isononyl trimellitate; polyester plasticizers such as propylene glycol adipate and 1,3-butylene glycol adipate, which are composed of polymers of dibasic acids such as adipic acid, azelaic acid, sebacic acid, and phthalic acid with glycols, glycerins, and monobasic acids; phosphate ester plasticizers such as triethyl phosphate, tributyl phosphate, tri-2-ethylhexyl phosphate, triphenyl phosphate, tricresyl phosphate, trichloroethyl phosphate, trisdichloropropyl phosphate, tributoxyethyl phosphate, tris(β-chloropropyl)phosphate, octyl diphenyl phosphate, tris(isopropylphenyl phosphate), and cresyl diphenyl phosphate; and chlorinated paraffin plasticizers.

[0069] The content of the plasticizer is preferably 30 parts by mass or less, more preferably 20 parts by mass or less, and even more preferably 15 parts by mass or less, per 100 parts by mass of the halogen-based rubber, and is preferably 0.1 part by mass or more, more preferably 1.0 part by mass or more, and even more preferably 5.0 parts by mass or more.

[0070] The rubber member of the present disclosure may further contain other components in addition to those described above, as necessary. Examples of the other components include known additives used in rubber compositions, such as stabilizers, antioxidants, vulcanization accelerators (such as stearic acid), viscosity enhancers, flame retardants, and pigments, and these can be added within a range that does not impair the effects of the present disclosure.

[0071] The use of an antioxidant as the other component is one preferred embodiment. Examples of the antioxidant include amine-based antioxidants, phenol-based antioxidants, and the like as primary antioxidants, and one or more of these can be used. Examples of the secondary antioxidant include sulfur-based antioxidants, phosphorus-based antioxidants, and the like. The combined use of a primary antioxidant and a secondary antioxidant is preferred, and a combination of an amine-based antioxidant and a sulfur-based antioxidant is particularly preferred.

[0072] The content of the antioxidant is preferably 0 part by mass or more, more preferably 0.1 part by mass or more, and particularly preferably 0.5 part by mass or more, per 100 parts by mass of the halogen-based rubber, and is preferably 30 parts by mass or less, particularly preferably 10 parts by mass or less. If the content exceeds 30 parts by mass, blooming occurs, which is not preferred.

[0073] The content of the other components other than the antioxidant is preferably 0 part by mass or more, more preferably 1.0 part by mass or more, and is preferably 150 parts by mass or less, more preferably 100 parts by mass or less, per 100 parts by mass of the halogen-based rubber.

[0074] The rubber member of the present disclosure is one that comes into contact with a corrosive substance. A part of the rubber member may come into contact with the corrosive substance, or the entire rubber member may come into contact with the corrosive substance.

[0075] The corrosive substance may be any substance that is corrosive to rubber, resin, metal, etc. The corrosive substance may be liquid, solid, or gaseous. In order to more significantly exhibit the effects of the present disclosure, the corrosive substance is preferably liquid.

[0076] The redox potential (vs. NHE) of the corrosive substance is preferably −2.0 V or higher, more preferably −1.0 V or higher, and even more preferably −0.5 V or higher, and is preferably 3.0 V or lower, more preferably 2.5 V or lower, and even more preferably 2.1 V or lower.

[0077] Examples of the corrosive substance include acidic substances, basic substances, oxidizing substances, organic solvents, and salt water.

[0078] The acidic substance may be a chemical solution having a pH of 6 or less, preferably 5 or less, and more preferably 4 or less. Specific examples include acids such as sulfuric acid, hydrofluoric acid, nitric acid, phosphoric acid, and hydrochloric acid; mixtures of these acids; and mixtures of these acids with other substances (such as hydrogen peroxide). Among these, at least one selected from the group consisting of sulfuric acid, hydrofluoric acid, nitric acid, phosphoric acid, hydrochloric acid, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide and hydrochloric acid, and a mixed chemical solution of hydrogen peroxide and sulfuric acid is preferred, and at least one selected from the group consisting of hydrofluoric acid, nitric acid, phosphoric acid, hydrochloric acid, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide and hydrochloric acid, and a mixed chemical solution of hydrogen peroxide and sulfuric acid is more preferred.

[0079] The basic substance may be a chemical solution having a pH of 8 or more, preferably 9 or more, and more preferably 10 or more. Specifically, TMAH([(CH ３ ) ４ N] ＋ [OH] － ), aqueous sodium hydroxide solution, ammonia, and the like; mixtures of these bases; mixtures of these bases with other substances (hydrogen peroxide, etc.). Among these, TMAH([(CH ３ ) ４ N] ＋ [OH] － ), ammonia water, and a mixed chemical solution of hydrogen peroxide water and ammonia water are preferred.

[0080] The basic substance also includes a chemical solution having an oxidation-reduction potential (vs. NHE) of −2.0 to 0 V, preferably −1.0 to 0 V, more preferably −0.5 to 0 V. Specifically, TMAH([(CH ３ ) ４ N] ＋ [OH] － ), aqueous sodium hydroxide solution, aqueous ammonia, hydroxylamine, hydrazine, hydrogen water, sodium sulfite, and other basic substances; and mixtures of these basic substances with other substances. ３ ) ４ N] ＋ [OH] － ), at least one selected from the group consisting of aqueous sodium hydroxide solution, aqueous ammonia, and a mixed solution of aqueous hydrogen peroxide and aqueous ammonia is preferred.

[0081] The oxidizing substance may be a chemical solution having an oxidation-reduction potential (vs. NHE) of 0 to 3.0 V, preferably 0.5 to 2.5 V, and more preferably 1.0 to 2.1 V. Specific examples include sulfuric acid, nitric acid, hydrochloric acid, hydrogen peroxide solution, and mixtures of these oxidizing substances with other substances (such as hydrofluoric acid). Among these, at least one selected from the group consisting of sulfuric acid, nitric acid, hydrochloric acid, hydrogen peroxide solution, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide solution and hydrochloric acid, and a mixed chemical solution of hydrogen peroxide solution and sulfuric acid is preferred, and at least one selected from the group consisting of nitric acid, hydrochloric acid, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide solution and hydrochloric acid, and a mixed chemical solution of hydrogen peroxide solution and sulfuric acid is more preferred.

[0082] Examples of the organic solvent include esters such as methyl acetate, ethyl acetate, propyl acetate, n-butyl acetate, and tert-butyl acetate; ketones such as acetone, methyl ethyl ketone, and cyclohexanone; aliphatic hydrocarbons such as hexane, cyclohexane, octane, nonane, decane, undecane, dodecane, and mineral spirits; aromatic hydrocarbons such as benzene, toluene, xylene, naphthalene, and solvent naphtha; alcohols such as methanol, ethanol, isopropyl alcohol, tert-butanol, and ethylene glycol monoalkyl ether; cyclic ethers such as tetrahydrofuran, tetrahydropyran, and dioxane; nitriles such as acetonitrile and propionitrile; amides such as dimethyl sulfoxide, N,N-dimethylformamide, and N,N-dimethylacetamide; halogenated hydrocarbons such as dichloromethane, dichloroethane, and chloroform; and mixtures thereof. Among these, alcohols are preferred, and isopropyl alcohol is more preferred.

[0083] The corrosive substance is preferably at least one selected from the group consisting of acidic substances, basic substances, oxidizing substances, organic solvents, and brine, more preferably at least one selected from the group consisting of acidic substances, basic substances, oxidizing substances, and organic solvents, and even more preferably at least one selected from the group consisting of acidic substances and basic substances.

[0084] The corrosive substance is preferably at least one selected from the group consisting of sulfuric acid, hydrofluoric acid, nitric acid, phosphoric acid, hydrochloric acid, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide and hydrochloric acid, a mixed chemical solution of hydrogen peroxide and sulfuric acid, TMAH, a sodium hydroxide aqueous solution, ammonia water, a mixed chemical solution of hydrogen peroxide and ammonia water, isopropyl alcohol, and salt water; more preferably at least one selected from the group consisting of hydrofluoric acid, nitric acid, phosphoric acid, hydrochloric acid, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide and hydrochloric acid, a mixed chemical solution of hydrogen peroxide and sulfuric acid, TMAH, a sodium hydroxide aqueous solution, a mixed chemical solution of hydrogen peroxide and ammonia water, and isopropyl alcohol; and even more preferably at least one selected from the group consisting of hydrofluoric acid, hydrochloric acid, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide and sulfuric acid, and TMAH.

[0085] The rubber member of the present disclosure may have only a portion (layer) containing the halogen-based rubber, or may have a portion (layer) containing the halogen-based rubber and other portions (layers). From the viewpoint of ensuring corrosion resistance, it is preferable that at least a portion of the surface that comes into contact with the corrosive substance is composed of the portion (layer) containing the halogen-based rubber, and it is more preferable that the entire surface that comes into contact with the corrosive substance is composed of the portion (layer) containing the halogen-based rubber.

[0086] The rubber member of the present disclosure is used as at least one member selected from the group consisting of building materials, mobility members, aerospace members, medical members, semiconductor members, and information and communication members. As the member, a semiconductor member is preferred because of its excellent corrosion resistance and low metal elution amount, and a semiconductor manufacturing-related equipment member (an article for semiconductor manufacturing-related equipment) is more preferred.

[0087] Examples of the building materials (construction materials) include interior architectural materials such as baseboards, ceiling materials, and plumbing materials, and exterior architectural materials such as waterproof sheets, waterproofing materials, exterior wall materials, and roofing materials. Examples of the mobility components include parts used in ferries, trains, automobiles, motorcycles, drones, robots, and the like. Examples of the aerospace components include exterior and interior materials for aircraft, rockets, and the like, wire coating materials, cable protection materials, jet engines, cabin interior materials, and parts thereof. Examples of the medical components include piping materials, chemical containers, sterilization containers, medical tools, laboratory and analytical instruments, and packaging. Examples of the semiconductor components include process materials used in semiconductor manufacturing and parts for semiconductor manufacturing-related equipment. Examples of the information and communication components include parts for devices such as wireless LAN transmission and reception circuits, circuit boards, and parts for optical communication devices.

[0088] Examples of components according to the present disclosure include containers, piping, nozzles, tubes, tanks, joints, valves, pumps, housings, spin chucks, O-rings, packings, gaskets, washers, sealing materials, nuts, bolts, films, bottles, wire coatings, hoses, pipes, sheets, rollers, cocks, connectors, filter housings, filter cages, flow meters, wafer carriers, and wafer boxes.

[0089] Because corrosion resistance is required, the rubber member of the present disclosure can be suitably applied to at least one selected from the group consisting of containers, piping, nozzles, tubes, tanks, joints, valves, pumps, spin chucks, O-rings, packings, gaskets, washers, and sealing materials. In particular, the rubber member can be suitably applied to at least one selected from the group consisting of containers, piping, nozzles, tubes, tanks, joints, valves, pumps, spin chucks, O-rings, gaskets, washers, and sealing materials, more suitably applied to at least one selected from the group consisting of O-rings, packings, gaskets, and sealing materials, and particularly suitably applied to O-rings. Furthermore, the rubber member can be suitably used in the above-mentioned piping, nozzles, tubes, O-rings, packings, gaskets, and sealing materials (preferably O-rings, packings, gaskets, and sealing materials, more preferably O-rings) in semiconductor manufacturing-related equipment.

[0090] The piping is not particularly limited, but its shape preferably has an inner diameter of 2 mm to 400 mm, more preferably 2 mm to 100 mm, and particularly preferably 2 mm to 25 mm. Examples include a robust pipe type, a flexible hose that can be incorporated to fit the installation space, and a bellows pipe with a large diameter that can be bent. The inside of the piping is made of a clean material (low contamination of the chemical solution by extracted ions) and chemical-resistant, and may be polished with high precision to prevent dust generation and to prevent disturbance of the liquid or gas flow. Depending on the chemical solution being passed through, such as an organic solvent, antistatic properties may be required to prevent static electricity buildup. Conductive fillers (carbon black, carbon nanotubes, etc.) may be added to the piping to the extent that cleanliness is not impaired.

[0091] The nozzle is not particularly limited, but the tip may be precisely machined to match the size and shape of the part, and in addition, since it comes into contact with the part, it can be made of a highly hard and durable material that is resistant to friction and bending.

[0092] The tube is not particularly limited, but the tube diameter is preferably 2 mm to 400 mm, more preferably 2 mm to 100 mm, and particularly preferably 2 to 25 mm. Materials having stress crack resistance, chemical resistance, excellent mechanical strength, and cleanliness (less contamination of the chemical solution by extracted ions) are used. Depending on the chemical solution being passed through, such as an organic solvent, antistatic properties may be required to prevent static electricity buildup. Conductive fillers (carbon black, carbon nanotubes, etc.) may be added to the tube to the extent that cleanliness is not impaired, thereby providing antistatic properties.

[0093] The containers and tanks are not particularly limited, but may be precision cleaned (water washing, acetic acid immersion, hydrochloric acid immersion, nitric acid immersion, wiping cleaning, pure water cleaning, etc.) to remove dirt and residues. Packaging after cleaning may be carried out in a clean room or clean booth environment.

[0094] The joints and valves are not particularly limited, but are required to be oil-free, particle-free, dead space-free, and external leak-free, and the size is preferably in the range of Φ3.2 mm to 40 mm, and more preferably in the range of Φ3.2 to 12.7 mm.

[0095] The pump is not particularly limited, but may be required to have retractability.

[0096] The spin chuck is not particularly limited, but may be required to have hardness, corrosion resistance, and dimensional stability, and may be provided with electrical conductivity.

[0097] O-rings and sealing materials are not particularly limited, but the material properties required are excellent elasticity, good compression set, excellent wear resistance, excellent heat resistance, resistance to corrosion by applied liquids and gases, and a long life. In particular, O-rings used in semiconductor manufacturing-related equipment are used in harsh chemical environments, such as being exposed to various plasmas, and therefore are required to have high heat resistance, chemical resistance, and plasma resistance. The compression set at 100°C for 72 hours is preferably 25% or less, more preferably 20% or less, even more preferably 15% or less, and even more preferably 10% or less.

[0098] The packing and gasket are not particularly limited, but may be required to have a good compression set, a low coefficient of friction, and excellent abrasion resistance, and may also be required to have heat resistance, cold resistance, pressure resistance, and chemical resistance to prevent leakage. The compression set at 100°C for 72 hours is preferably 25% or less, more preferably 20% or less, even more preferably 15% or less, and even more preferably 10% or less.

[0099] The washer is not particularly limited, but is expected to be used in a clean room or the like and may be required to have durability, corrosion resistance, and rust prevention properties.

[0100] The members of the present disclosure can be used, for example, in the following applications: <Building materials> Exterior materials for furniture, and architectural interior materials such as walls, ceilings, and floors; Exterior materials for buildings such as exterior walls such as siding, fences, roofs, gates, and gable boards; Surface decorative materials such as window frames, doors, handrails, thresholds, and lintels; Membrane materials (roofing materials, ceiling materials, exterior wall materials, interior wall materials, covering materials, etc.) for membrane structure buildings (sports facilities, horticultural facilities, atriums, etc.); Plate materials for outdoor use (soundproof walls, windbreak fences, wave fences, garage canopies, shopping malls, walkway walls, roofing materials); Building materials such as tent materials for tent warehouses, sunshade membrane materials, partial roofing materials for letting in light, window materials in place of glass, membrane materials for fire-retardant partitions, curtains, exterior wall reinforcement, waterproof membranes, smoke-proof membranes, non-flammable transparent partitions, and road reinforcement; Agricultural films, weather-resistant covers for various roofing materials and side walls, etc.; Covering materials for glass such as non-flammable fire-resistant safety glass; etc. Among these, because corrosion resistance is required, the rubber is particularly suitable for use in membrane materials for membrane structure buildings, outdoor use board materials, tent materials for tent warehouses, sunshade membrane materials, partial roof materials for lighting, window materials replacing glass, flame retardant partition membrane materials, curtains, building materials such as exterior wall reinforcement, waterproof membranes, smokeproof membranes, non-flammable transparent partitions, road reinforcement, agricultural films, and weather-resistant covers for various roof materials and side walls, etc. When the member of the present disclosure is used for the above applications, from the viewpoints of corrosion resistance and weather resistance, the halogen-based rubber is preferably at least one selected from the group consisting of chlorosulfonated ethylene rubber (CSM), chlorinated polyethylene rubber (CM), chlorinated butyl rubber (CIIR), and brominated butyl rubber (BIIR).

[0101] <Mobility> O-rings, tubes, packings, valve core materials, hoses, seals, and diaphragms used in automotive fuel systems and peripheral devices (for example, injector O-rings, injector packings, fuel pump O-rings, diaphragms, fuel hoses, filler hoses, and evaporation hoses) (these may be for sour gasoline resistance, alcohol resistance, or resistance to fuels containing gasoline additives such as methyl tertiary butyl ether or amine resistance). Hoses and seals used in automotive automatic transmissions (for example, ATF hoses). Gaskets, shaft seals, valve stem seals, seals, and hoses used in automotive engines and peripheral devices (for example, carburetor flange gaskets, engine head gaskets, metal gaskets, crankshaft seals, camshaft seals, valve stem seals, manifold packing, and oil hoses). Oxygen sensors for automotive engines. Other automotive components such as automotive brake hoses, air conditioning hoses, radiator hoses, radiator tanks, chemical tanks, bellows, spacers, rollers, gasoline tanks, bumpers, door trim, instrument panels, and electrical wire coating materials; O-rings, tubes, packings, valve core materials, hoses, sealants, and diaphragms used in marine fuel systems and peripheral devices; Anticorrosion tapes for piping, such as tapes wrapped around piping on marine decks, etc. Among these, because corrosion resistance is required, the composition is particularly suitable for O-rings, tubes, packings, hoses, and sealants used in marine fuel systems and peripheral devices; hoses and sealants used in automotive automatic transmission systems; automotive brake hoses, air conditioning hoses, radiator hoses, bellows, spacers, rollers, bumpers, door trim, and electrical wire coating materials; and O-rings, tubes, packings, valve core materials, hoses, sealants, and diaphragms used in marine fuel systems and peripheral devices.When the member of the present disclosure is used for the above-mentioned applications, from the viewpoint of corrosion resistance and oil resistance, the halogen-based rubber is preferably at least one selected from the group consisting of chlorosulfonated ethylene rubber (CSM), chlorinated polyethylene rubber (CM), chlorinated butyl rubber (CIIR), brominated butyl rubber (BIIR), epichlorohydrin rubber (ECO), and chloroprene rubber (CR).

[0102] <Aerospace> O-rings, tubes, packings, valve cores, hoses, seals, diaphragms, etc. used in fuel systems and peripheral devices of aircraft and rockets. Among these, the O-rings, tubes, packings, hoses, and seals used in fuel systems and peripheral devices of aircraft and rockets are particularly suitable because corrosion resistance is required. When the member of the present disclosure is used for the above applications, from the viewpoints of corrosion resistance and weather resistance, the halogen-based rubber is preferably at least one selected from the group consisting of chlorosulfonated ethylene rubber (CSM), chlorinated polyethylene rubber (CM), chlorinated butyl rubber (CIIR), brominated butyl rubber (BIIR), epichlorohydrin rubber (ECO), and chloroprene rubber (CR).

[0103] <Medical> Piping materials such as medical infusion tubes, blood collection tubes, drain tubes, catheters, catheter connection parts, stents, piping, joints, tube connectors, valves, and filters; liquid, powder, and solid drug containers such as packaging, bottles, bottle caps, vials, ampoules, prefilled syringes, infusion bags, infusion bag connection parts, sealed medicine bags, press-through packages, and eye drop containers; sample containers such as urine collection bags, blood test tubes for sampling, blood collection tubes, test cells, and specimen containers; sterilized containers for medical equipment such as scalpels, forceps, gauze, and contact lenses; housings for electronic devices such as medical sensors, cardiac devices, and pacemakers; medical equipment such as inhalation masks, syringes, syringe rods, injection needles, surgical trays, protective stoppers, rubber stoppers, and endoscopes; laboratory and analytical equipment such as beakers, petri dishes, flasks, test tubes, and centrifuge tubes; medical optical components such as plastic lenses for medical testing; Artificial organs and parts thereof, such as denture bases, dentures, artificial hearts, artificial tooth roots, artificial bones, and artificial joints; etc. Among these, from the viewpoint of chemical resistance and heat resistance, the halogen-containing rubber is particularly suitable for medical infusion tubes, blood collection tubes, drainage tubes, catheters, piping, joints, tube connectors, valves, bottles, bottle caps, vials, ampoules, prefilled syringes, infusion bags, urine collection bags, blood test tubes for sampling, blood collection tubes, test cells, specimen containers, sterilization containers, syringes, syringe rods, surgical trays, and protective stoppers. When the member of the present disclosure is used for the above applications, from the viewpoint of chemical resistance and heat resistance, the halogen-containing rubber is preferably at least one selected from the group consisting of chlorosulfonated ethylene rubber (CSM), chlorinated polyethylene rubber (CM), chlorinated butyl rubber (CIIR), and brominated butyl rubber (BIIR).

[0104] <Information and Communications> Insulating plates for high-frequency circuits, insulating materials for connecting parts, printed wiring boards; bases and antenna covers for high-frequency vacuum tubes; wire coating materials for coaxial cables, LAN cables, etc.; optical fiber coating materials; displays such as liquid crystal displays; mobile phone components; etc. Among these, because corrosion resistance is required, the rubber is particularly suitable for insulating plates for high-frequency circuits, insulating materials for connecting parts, printed wiring boards; bases and antenna covers for high-frequency vacuum tubes; wire coating materials for coaxial cables, LAN cables, etc.; and optical fiber coating materials. When the member of the present disclosure is used for the above applications, from the viewpoint of corrosion resistance, the halogen-based rubber is preferably at least one selected from the group consisting of chlorosulfonated ethylene rubber (CSM), chlorinated polyethylene rubber (CM), chlorinated butyl rubber (CIIR), and brominated butyl rubber (BIIR).

[0105] <Semiconductors> Chemical liquid transfer components such as chemical liquid tanks, containers, housings, piping, O-rings, tubes, packing, valve core materials, hoses, sealing materials, rolls, gaskets, washers, diaphragms, nozzles, joints, coatings, and linings for the inner surfaces of pipes in semiconductor factories and semiconductor manufacturing-related equipment; Chemical stoppers and packaging films; Waste liquid transport components such as tanks, containers, tubes, hoses, joints, and nozzles for transporting waste liquid; High-temperature liquid transport components such as containers, tubes, and hoses for transporting high-temperature liquids; Steam piping components such as tubes and hoses for steam piping; etc. Among these, because corrosion resistance is required, the material can be particularly suitably used for O-rings, tubes, packing, hoses, sealing materials, rolls, gaskets, diaphragms, and joints in semiconductor manufacturing-related equipment. When the member of the present disclosure is used for the above-mentioned applications, the halogen-based rubber is preferably at least one selected from the group consisting of chlorosulfonated ethylene rubber (CSM), chlorinated polyethylene rubber (CM), chlorinated butyl rubber (CIIR), and brominated butyl rubber (BIIR).

[0106] The semiconductor manufacturing equipment of the above-mentioned semiconductor manufacturing related equipment includes photolithography process equipment (coating equipment, resist stripping equipment, developing equipment (developer), baking equipment, descum equipment), thin film formation, etching, cleaning and drying equipment (vacuum deposition equipment, sputtering equipment, CVD equipment, cleaning equipment, etching equipment, drying equipment, scrub cleaning equipment), inspection and evaluation equipment and other manufacturing equipment (defect repair equipment), wafer processing equipment (wafer marking equipment), resist processing equipment (coating equipment, developing equipment, resist stripping equipment, ashing equipment, baking equipment), etching Equipment (dry etching equipment, wet etching equipment), cleaning and drying equipment (dry cleaning equipment, wet cleaning equipment, scrub cleaning equipment, drying equipment), heat treatment equipment (oxidation equipment, diffusion equipment, annealing equipment), ion implantation equipment (high current ion implantation equipment, medium current ion implantation equipment, high energy ion implantation equipment), thin film formation equipment, CVD equipment (high pressure CVD equipment, SACVD, low pressure CVD, plasma CVD equipment, metal CVD equipment, ALD equipment), sputtering equipment, other thin film formation equipment (vacuum deposition equipment, silicon epitaxial growth equipment, compound semiconductor conductor epitaxial equipment (MOCVD equipment, MBE equipment), plating equipment), inspection and evaluation equipment (Auger electron spectroscopy equipment), CMP equipment (CMP equipment, CMP cleaning equipment), other processing equipment (wafer marking equipment, back grinding machines, bump plating equipment, back grinder tape applicators, back grinders, back grinder tape peelers), dicing equipment (dicing equipment, wafer mounting equipment), bonding equipment (die bonding equipment, hybrid bonding equipment, wire bonding equipment, inner lead bonding equipment, outer lead bonding equipment, flip chip bonding equipment), packaging equipment (molding equipment, deburring equipment, solder processing equipment), other testing equipment (electron beam testing equipment, laser beam testing equipment), probing equipment (proppers), handlers, aging equipment (aging equipment, burn-in equipment, IC insertion equipment, IC extraction equipment), other inspection equipment (cold-heat testing equipment, temperature and humidity testing equipment, pressure cooker equipment, laser processing systems, various life test equipment), etc.Equipment related to semiconductor manufacturing equipment includes various transport devices (intra-process wafer transport devices, inter-process wafer transport devices, stockers), pure water and chemical liquid equipment (pure water production equipment, ultrafiltration equipment, reverse osmosis equipment, sterilization equipment, chemical supply equipment, slurry supply equipment, chemical purification equipment, waste liquid treatment equipment), various gas equipment (gas generators, gas purification equipment, gas mixing equipment, gas detection equipment, exhaust gas treatment equipment), clean room equipment (clean benches, clean tunnels, thermal chambers, environmental testing equipment, air showers, pass boxes), and other manufacturing-related equipment (various jig cleaning and drying equipment, flow control equipment, various taping equipment, various packaging equipment, measuring equipment for liquids and various gases).

[0107] Among these, semiconductor manufacturing equipment in which corrosive substances are used within the equipment is not particularly limited, but from the viewpoint of making use of the physical properties of chemical resistance, photolithography process equipment (coating equipment, resist stripping equipment, developing equipment (developer), descum equipment), thin film formation / etching / cleaning / drying equipment (vacuum deposition equipment, CVD equipment, cleaning equipment, etching equipment, drying equipment, scrub cleaning equipment), inspection evaluation equipment and other manufacturing equipment (defect repair equipment), resist processing equipment (coating equipment, developing equipment, resist stripping equipment, ashing equipment), etching equipment (dry etching equipment, wet etching equipment), cleaning Preferred are cleaning / drying equipment (wet cleaning equipment, scrub cleaning equipment, drying equipment), CVD equipment (high-pressure CVD equipment, SACVD, low-pressure CVD, plasma CVD equipment, metal CVD equipment, ALD equipment), other thin film formation equipment (vacuum deposition equipment, silicon epitaxial growth equipment, compound semiconductor epitaxial equipment (MOCVD equipment, MBE equipment), plating equipment), CMP equipment (CMP equipment, CMP cleaning equipment), other processing equipment (bump plating equipment), aging equipment (aging equipment, burn-in equipment, IC insertion equipment, IC extraction equipment), and other inspection equipment (various life test equipment). Preferred examples of equipment related to semiconductor manufacturing equipment include pure water / chemical liquid equipment (chemical supply equipment, slurry supply equipment, chemical purification equipment, waste liquid treatment equipment), various gas equipment (gas generators, gas purification equipment, gas mixing equipment, gas detection equipment, exhaust gas treatment equipment), clean room equipment (thermal chambers, environmental testing equipment), and other manufacturing-related equipment (various jig cleaning / drying equipment, flow control equipment, various packaging equipment, measuring equipment for liquids and various gases).

[0108] As described above, the rubber member of the present disclosure can be suitably used as a semiconductor manufacturing-related equipment component (semiconductor manufacturing-related equipment article), but because of its excellent chemical resistance, it is more suitable as a component constituting semiconductor manufacturing-related equipment in which chemicals are used within the equipment, in particular as a component that comes into contact with chemicals.

[0109] The chemicals are not particularly limited, but include chemicals used in semiconductor manufacturing related equipment, etc. The chemicals can be used alone or in combination of two or more.

[0110] Specific examples of the chemical include TMAH ([(CH３ ) ４ N] ＋ [OH] － ), sulfuric acid, sodium hydroxide solution, isopropyl alcohol, hydrofluoric acid, mixed acid of hydrofluoric acid and nitric acid, SPM (Sulfuric Acid Hydrogen Peroxide Mixture), SC1 (NH ４ OH, H ２ O ２ and H ２ O mixture), SC2 (HCl, H ２ O ２ and H ２ Among these, TMAH, isopropyl alcohol, hydrofluoric acid, a mixed acid of hydrofluoric acid and nitric acid, SPM, SC1, SC2, phosphoric acid, and hydrochloric acid are preferred, and TMAH, hydrofluoric acid, a mixed acid of hydrofluoric acid and nitric acid, and SPM are more preferred.

[0111] Other examples of the chemical include at least one selected from the group consisting of silicon-based gases, arsenic-based gases, phosphorus-based gases, boron-based gases, metal hydride gases, metal alkyl gases, halogenated hydrocarbon gases, halogen-halide gases, nitrogen oxide gases, hydrogen sulfide gases, ammonia gas, trimethylamine gas, propane gas, trimethylaluminum gas, hydrogen gas, helium gas, nitrogen gas, oxygen gas, argon gas, and carbon dioxide gas. Also preferred as the chemical is at least one selected from the group consisting of silicon-based gases, arsenic-based gases, phosphorus-based gases, boron-based gases, metal hydride gases, metal alkyl gases, halogenated hydrocarbon gases, halogen-halide gases, nitrogen oxide gases, hydrogen sulfide gas, ammonia gas, trimethylamine gas, propane gas, trimethylaluminum gas, hydrogen gas, helium gas, nitrogen gas, oxygen gas, argon gas, and carbon dioxide gas.

[0112] Examples of the silicon-based gas include monosilane, dichlorosilane, trichlorosilane, silicon tetrachloride, silicon tetrafluoride, and disilane. Examples of the arsenic-based gas include arsine, arsenic(III) fluoride, arsenic(V) fluoride, arsenic(III) chloride, and arsenic(V) chloride. Examples of the phosphorus-based gas include phosphine, phosphorus(III) fluoride, phosphorus(V) fluoride, phosphorus(III) chloride, phosphorus(V) chloride, and phosphorus oxychloride. Examples of the boron-based gas include diborane, boron trifluoride, boron trichloride, and boron tribromide. Examples of the metal hydride gas include hydrogen selenide, monogermane, hydrogen telluride, stibine, and tin hydride. Examples of the metal alkyl gas include trialkylgallium and trialkylindium. Examples of the halogenated hydrocarbon gas include tetrafluoromethane, trifluoromethane, difluoromethane, hexafluoropropane, octafluoropropane, and octafluorocyclobutane. Examples of the halogen / halide gas include fluorine, hydrogen fluoride, chlorine, hydrogen chloride, carbon tetrachloride, hydrogen bromide, sulfur hexafluoride, nitrogen trifluoride, sulfur tetrafluoride, tungsten(VI) fluoride, molybdenum(VI) fluoride, germanium tetrachloride, tin(IV) chloride, antimony(V) chloride, tungsten(VI) chloride, and molybdenum hexachloride. Examples of the nitrogen oxide gas include nitric oxide, nitrogen dioxide, and dinitrogen monoxide. Among these, ammonia gas, nitrogen trifluoride, dinitrogen monoxide, monosilane, and octafluorocyclobutane are preferred, and ammonia gas, nitrogen trifluoride, and dinitrogen monoxide are more preferred.

[0113] The semiconductor manufacturing related equipment member (semiconductor manufacturing related equipment article) may have only a portion (layer) containing the halogen-based rubber, or may have a portion (layer) containing the halogen-based rubber and other portions (layers). From the viewpoint of ensuring chemical resistance, it is preferable that at least a portion of the surface that comes into contact with the chemicals is composed of a portion (layer) containing the halogen-based rubber, and it is more preferable that the entire surface that comes into contact with the chemicals is composed of a portion (layer) containing the halogen-based rubber.

[0114] The rubber member of the present disclosure is prepared by immersing a test piece (size: 10 mm x 50 mm x 2 mm) of the rubber member in each of the four chemical solutions (1), (3), (5), and (6) described below for one week, and the relative mass after immersion, where the mass before immersion is 100, is preferably 60 to 140 in all cases. A member that satisfies this requirement has excellent corrosion resistance. The relative mass is more preferably 85 or more, even more preferably 90 or more, even more preferably 95 or more, and particularly preferably 98 or more, and more preferably 120 or less, even more preferably 110 or less, even more preferably 108 or less, and particularly preferably 105 or less. Ideally (most preferably), it is 100.

[0115] It is more preferable that the rubber member of the present disclosure is obtained by immersing a test piece (size: 10 mm × 50 mm × 2 mm) of the rubber member in each of the nine chemical solutions (1) to (9) described below for one week, and that the relative values ​​of the mass after immersion, where the mass before immersion is taken as 100, are all within the above-mentioned range.

[0116] The rubber member of the present disclosure is prepared by immersing a test piece (size: 10 mm x 50 mm x 2 mm) of the rubber member in each of nine chemical solutions (1) to (9) described below for one week, and determining the relative mass of the rubber member after immersion, with the mass before immersion being 100. The average relative value for the nine chemical solutions is preferably 80 to 120, with a standard deviation of 20 or less. A member that satisfies these requirements has excellent corrosion resistance. The average relative value is more preferably 85 or more, even more preferably 90 or more, even more preferably 95 or more, and particularly preferably 97 or more, and more preferably 110 or less, even more preferably 108 or less, even more preferably 107 or less, even more preferably 106 or less, even more preferably 105 or less, and particularly preferably 104 or less. Ideally (most preferably), it is 100. The standard deviation of the relative values ​​is more preferably 15 or less, even more preferably 10 or less, even more preferably 9 or less, even more preferably 7 or less, even more preferably 6 or less, particularly preferably 5 or less, and may be 0 or more, 1 or more, or 3 or more. Ideally (most preferably) it is 0.

[0117] The chemical solutions used for immersing the test pieces are as follows: (1) 25% by mass TMAH ([(CH ３ ) ４ N] ＋ [OH] －) (80°C) (2) 100% by mass isopropyl alcohol (80°C) (3) 49% by mass hydrofluoric acid (70°C) (4) Mixed acid of hydrofluoric acid and nitric acid (a mixture of 49% by mass hydrofluoric acid and 69 to 71% by mass nitric acid in a volume ratio of 1:5) (20°C) (5) Mixed acid of hydrofluoric acid and nitric acid (a mixture of 49% by mass hydrofluoric acid and 69 to 71% by mass nitric acid in a volume ratio of 1:100) (20°C) (6) SPM (a mixture of 98% by mass sulfuric acid and 30 to 36% by mass hydrogen peroxide solution in a volume ratio of 2:1) (80°C) (7) SC1 (a mixture of 25 to 28% by mass ammonia water, 30 to 36% by mass hydrogen peroxide solution, and deionized water in a volume ratio of 1:1:5) (70°C) (8) SC2 (a mixture of 35 to 37% by mass hydrochloric acid, 30 to 36% by mass hydrogen peroxide, and deionized water in a volume ratio of 1:1:4) (70°C) (9) 85% by mass phosphoric acid (80°C)

[0118] In the rubber member of the present disclosure, when a test piece (size: 10 mm × 50 mm × 2 mm) of the member is immersed in 3.6 mass % hydrochloric acid at 23°C for one week, the amount of metal elution (by mass) of each of 14 elements (Li, Na, Mg, Al, K, Ti, Cr, Mn, Fe, Ni, Cu, Zn, Ag, Cd) is preferably 30 ppb or less, more preferably 15 ppb or less, even more preferably 4 ppb or less, even more preferably 3.5 ppb or less, even more preferably 3.2 ppb or less, and particularly preferably 1 ppb or less.

[0119] In the rubber member of the present disclosure, when a test piece (size: 10 mm × 50 mm × 2 mm) of the member is immersed in 3.6 mass % hydrochloric acid at 23°C for one week, the metal elution amounts (by mass) of two elements (Ca and Pb) are preferably 10,000 ppb or less. The elution amount of Ca is more preferably 100 ppb or less, even more preferably 80 ppb or less, even more preferably 30 ppb or less, even more preferably 27 ppb or less, and particularly preferably 25 ppb or less. The elution amount of Pb is more preferably 6,000 ppb or less, even more preferably 100 ppb or less, even more preferably 30 ppb or less, even more preferably 25 ppb or less, even more preferably 23 ppb or less, and particularly preferably 10 ppb or less.

[0120] In the rubber member of the present disclosure, when a test piece (size: 10 mm x 50 mm x 2 mm) of the member is immersed in 3.6 mass % hydrochloric acid at 23°C for one week, it is preferable that the amount of metal elution (by mass) of each of 16 elements (Li, Na, Mg, Al, K, Ca, Ti, Cr, Mn, Fe, Ni, Cu, Zn, Ag, Cd, Pb) is 10,000 ppb or less.

[0121] The amount of elution of any of the above elements is ideally (most preferably) 0 ppb, but may be an amount below the detection limit or more.

[0122] The rubber member of the present disclosure can be produced, for example, by kneading an uncrosslinked halogen-based rubber and a crosslinking agent, and further, if necessary, the above-mentioned acid acceptor, processing aid, crosslinking aid, reinforcing material (filler), plasticizer, and other components to obtain a rubber composition, and then molding and crosslinking the resulting rubber composition.

[0123] The kneading method is not particularly limited, and known methods using an internal mixer, a roll kneader, or the like can be employed.

[0124] The molding method is not particularly limited, and known methods such as compression molding, injection molding, transfer molding, and extrusion molding can be used.

[0125] The crosslinking method is not particularly limited, and known methods such as hot air crosslinking, microwave crosslinking, electron beam crosslinking, and heat pressing can be used. The crosslinking temperature depends on the crosslinking agent, but is preferably 100°C or higher, more preferably 130°C or higher, and even more preferably 140°C or higher. It is also preferably 250°C or lower, more preferably 200°C or lower, more preferably 190°C or lower, and even more preferably 180°C or lower. The crosslinking time depends on the crosslinking agent, but is preferably 5 minutes or higher, more preferably 10 minutes or higher, more preferably 15 minutes or higher, and even more preferably 20 minutes or higher, and is preferably 300 minutes or lower, more preferably 200 minutes or lower, more preferably 150 minutes or lower, even more preferably 120 minutes or lower, and particularly preferably 60 minutes or lower.

[0126] The present disclosure also relates to semiconductor manufacturing-related equipment equipped with the rubber member of the present disclosure. The use of the member of the present disclosure can impart excellent corrosion resistance to the equipment.

[0127] The semiconductor manufacturing-related device of the present disclosure is preferably one of the semiconductor manufacturing devices and related devices described above. Also, the semiconductor manufacturing-related device of the present disclosure is preferably at least one selected from the group consisting of semiconductor manufacturing devices and related devices for semiconductor manufacturing devices.

[0128] The semiconductor manufacturing equipment is preferably at least one selected from the group consisting of photolithography process equipment, thin film formation / etching / cleaning / drying equipment, inspection / evaluation equipment / manufacturing equipment, resist processing equipment, etching equipment, cleaning / drying equipment, CVD equipment, thin film formation equipment, CMP equipment, processing equipment, aging equipment, and inspection equipment, and the semiconductor manufacturing equipment-related equipment is preferably at least one selected from the group consisting of pure water / chemical equipment, gas equipment, clean room equipment, and manufacturing-related equipment.

[0129] the photolithography process equipment is at least one selected from the group consisting of a coating equipment, a resist stripping equipment, a developing equipment (developer), and a descum equipment; the thin film formation / etching / cleaning / drying equipment is at least one selected from the group consisting of a vacuum deposition equipment, a cleaning equipment, a drying equipment, and a scrub cleaning equipment; the inspection / evaluation equipment / manufacturing equipment is a defect repair equipment; the resist processing equipment is at least one selected from the group consisting of a coating equipment, a developing equipment, a resist stripping equipment, and an ashing equipment; the etching equipment is at least one selected from the group consisting of a dry etching equipment and a wet etching equipment; the cleaning / drying equipment is at least one selected from the group consisting of a wet cleaning equipment, a scrub cleaning equipment, and a drying equipment; the CVD equipment is at least one selected from the group consisting of a high-pressure CVD equipment, a SACVD equipment, a low-pressure CVD equipment, a plasma CVD equipment, a metal CVD equipment, and an ALD equipment; the thin film forming apparatus is at least one selected from the group consisting of a vacuum deposition apparatus, a silicon epitaxial growth apparatus, a compound semiconductor epitaxial apparatus (MOCVD apparatus, MBE apparatus), and a plating apparatus; the CMP apparatus is at least one selected from the group consisting of a CMP apparatus and a CMP cleaning apparatus; the processing apparatus is a bump plating apparatus; the aging apparatus is at least one selected from the group consisting of an aging apparatus, a burn-in apparatus, an IC insertion apparatus, and an IC extraction apparatus; the inspection apparatus is a life test apparatus; the pure water / chemical liquid apparatus is at least one selected from the group consisting of a chemical supply apparatus, a slurry supply apparatus, a chemical purification apparatus, and a waste liquid treatment apparatus; the gas apparatus is at least one selected from the group consisting of a gas generation apparatus, a gas purification apparatus, a gas mixing apparatus, a gas detection apparatus, and an exhaust gas treatment apparatus; the clean room apparatus is at least one selected from the group consisting of a thermal chamber and an environmental test apparatus; The manufacturing-related equipment is preferably at least one selected from the group consisting of jig cleaning / drying equipment, flow rate control equipment, packaging equipment, and liquid / gas measuring equipment.

[0130] Although the embodiments have been described above, it will be understood that various changes in form and details can be made without departing from the spirit and scope of the claims.

[0131] The present disclosure will now be described in more detail with reference to examples, but the present disclosure is not limited to these examples.

[0132] Various physical properties were measured by the following methods.

[0133] <Chemical Resistance (Corrosion Resistance) Test> The rubber sheets obtained in the Examples and Comparative Examples were cut into a size of 10 mm x 50 mm x 2 mm to prepare test specimens. The test specimens were dried at 60°C for 2 hours. After drying, the mass of the test specimens before immersion was measured at room temperature (20°C). After measurement, the test specimens were completely immersed in each of the chemical solutions (1) to (9) below and held for 1 week (168 hours). After holding, the test specimens were washed with pure water, water droplets on the surface were wiped off, and the specimens were dried at 60°C for 12 hours. The mass of the test specimens after immersion was measured at room temperature (20°C). From the measured masses before and after immersion, the relative value of the mass after immersion was calculated, with the mass before immersion being set at 100. The average and standard deviation of the masses (relative values) after immersion for the nine types (1) to (9) were also calculated. (Chemical Solutions) (1) 25% by mass TMAH([(CH ３ ) ４ N] ＋ [OH] －) (80°C) (2) 100% by mass IPA (isopropyl alcohol) (80°C) (3) 49% by mass hydrofluoric acid (70°C) (4) Mixed acid of hydrofluoric acid and nitric acid (mixture of 49% by mass hydrofluoric acid and 69 to 71% by mass nitric acid in a volume ratio of 1:5) (20°C) (5) Mixed acid of hydrofluoric acid and nitric acid (mixture of 49% by mass hydrofluoric acid and 69 to 71% by mass nitric acid in a volume ratio of 1:100) (20°C) (6) SPM (mixture of 98% by mass sulfuric acid and 30 to 36% by mass hydrogen peroxide solution in a volume ratio of 2:1) (80°C) Oxidation-reduction potential (vs NHE): 1.8V (7) SC1 (mixture of 25 to 28% by mass ammonia water, 30 to 36% by mass hydrogen peroxide solution and deionized water in a volume ratio of 1:1:5) (70°C) Oxidation-reduction potential (vs. NHE): 1.2 V (8) SC2 (a mixture of 35-37% by mass hydrochloric acid, 30-36% by mass hydrogen peroxide, and deionized water in a volume ratio of 1:1:4) (70 ° C) Oxidation-reduction potential (vs. NHE): 1.6 V (9) 85% by mass phosphoric acid (80 ° C)

[0134] <Metal Elution Test> The rubber sheets obtained in the Examples and Comparative Examples were cut into test specimens measuring 10 mm x 50 mm x 2 mm. As a pre-cleaning step, the test specimens were immersed in 3.6% by mass hydrochloric acid for 1 hour, and then rinsed with running pure water. The test specimens were then immersed in 100 mL of 3.6% by mass hydrochloric acid at 23°C. One week (168 hours) after the start of immersion, a portion of each immersion solution was extracted, and the metal concentrations of 16 elements (Li, Na, Mg, Al, K, Ca, Ti, Cr, Mn, Fe, Ni, Cu, Zn, Ag, Cd, and Pb) were measured using ICP-MSI (Agilent 8900, manufactured by Agilent Technologies) to determine the amount of metal elution.

[0135] The materials used in the examples and comparative examples are as follows: (Rubber) TOSO-CSM TS-530: chlorosulfonated ethylene rubber (CSM) manufactured by Tosoh Corporation, chlorine content: 35% by mass, sulfur content: 1.0% by mass, Mooney viscosity ML １＋４ (100 ° C): 56 TOSO-CSM TS-830: Chlorosulfonated ethylene rubber (CSM) manufactured by Tosoh Corporation, chlorine content: 36 mass%, sulfur content: 1.0 mass%, Mooney viscosity ML １＋４(100 ° C): 90 Eraslen 351A: Chlorinated polyethylene (CM) manufactured by Resonac Corporation, chlorine content: 34.0 to 37.0 mass%, Mooney viscosity ML １＋４ (121 ° C): 90 Eraslen 401A: Chlorinated polyethylene (CM) manufactured by Resonac Corporation, chlorine content: 38.0 to 41.0 mass%, Mooney viscosity ML １＋４ (121 ° C.): 115 Zetpol 2001L: Hydrogenated nitrile rubber (HNBR) manufactured by Zeon Corporation KE-951-U: Silicone rubber (Q) manufactured by Shin-Etsu Chemical Co., Ltd. (Carbon black) SEAST G-S: SRF carbon black manufactured by Tokai Carbon Co., Ltd. SEAST G-SO: FEF carbon black manufactured by Tokai Carbon Co., Ltd. (Crosslinking agent) Percumyl D-40: Dicumyl peroxide manufactured by NOF Corporation Sancerer 22-C: 2-Imidazoline-2-thiol (ETU) manufactured by Sanshin Chemical Industry Co., Ltd. Peroximon F-40: α,α'-bis(t-butylperoxy)diisopropylbenzene manufactured by NOF Corporation C-8: 2,5-dimethyl-2,5-bis(t-butylperoxy)hexane manufactured by Shin-Etsu Chemical Co., Ltd. (Vulcanization accelerator) TAIC (triallyl isocyanurate): "TAIC" manufactured by Mitsubishi Chemical Corporation Noccela DM: dibenzothiazole disulfide (MBTS), manufactured by Ouchi Shinko Chemical Industry Co., Ltd. Noccela TRA: dipentamethylenethiuram tetrasulfide (DPTT), manufactured by Ouchi Shinko Chemical Industry Co., Ltd. Noccela DT: di-o-tolylguanidine (DOTG), manufactured by Ouchi Shinko Chemical Industry Co., Ltd. (acid acceptor) Lissarge: lead oxide (PbO), manufactured by Mitsui Mining & Smelting Co., Ltd. JP-200: NISSO-PB JP-200, manufactured by Nippon Soda Co., Ltd., epoxidized polybutadiene, number average molecular weight: 2200 g / mol, epoxy equivalent: 210-240 (processing aid) Splendor R-300V: fatty acid ester, manufactured by Kao Corporation (crosslinking aid) Nocrac CD: 4,4'-bis(α,α-dimethylbenzyl)diphenylamine, manufactured by Ouchi Shinko Chemical Industry Co., Ltd. Nocrac MBZ: zinc salt of 2-mercaptobenzimidazole, manufactured by Ouchi Shinko Chemical Industry Co., Ltd.

[0136] Examples 1 to 9 and Comparative Example 1 According to the compounding ratios shown in Tables 1 to 3, kneading in an internal mixer (kneading A) was carried out using a Laboplastomill Banbury type mixer B-250 (manufactured by Toyo Seiki Seisakusho, Ltd.) for 5 minutes from a predetermined starting temperature. Next, kneading with a roll (kneading B) was carried out at 50±10°C using an electrically heated high-temperature roll machine (manufactured by Ikeda Machinery Industry Co., Ltd.). After kneading, crosslinking was carried out under predetermined conditions using an electric heating press (manufactured by Ohtake Machinery Industry Co., Ltd.) to produce rubber sheets (rubber members). Chemical resistance tests were carried out using the obtained rubber sheets. Metal elution tests were also carried out for Examples 1 to 9. The results are shown in Tables 1 to 3.

[0137] Comparative Example 2 According to the compounding ratios shown in Table 4, roll kneading (kneading B) was carried out at 50±10°C using an electrically heated high-temperature roll machine (manufactured by Ikeda Machinery Co., Ltd.). After kneading, the mixture was pressed at 165°C for 10 minutes using an electric heating press (manufactured by Ohtake Machinery Co., Ltd.), and then secondary vulcanization was carried out at 200°C for 4 hours to produce a rubber sheet (rubber member). A chemical resistance test was carried out using the obtained rubber sheet. The results are shown in Table 4.

[0138]

[0139]

[0140]

[0141]

[0142] The rubber members of the examples were suitable for use as members (components) in semiconductor manufacturing related equipment where chemicals are used.

Claims

1. A rubber component comprising a halogen-containing rubber containing at least one element selected from the group consisting of chlorine, bromine, and iodine, the rubber component being at least one selected from the group consisting of building materials, mobility components, aerospace components, semiconductor components, and information and communications components, and which comes into contact with corrosive substances.

2. The rubber member according to claim 1, wherein said halogen-containing rubber is at least one selected from the group consisting of chlorosulfonated ethylene rubber and chlorinated polyethylene rubber.

3. The rubber member according to claim 1 or 2, which contains at least one acid acceptor selected from the group consisting of lead compounds and epoxy compounds.

4. The rubber member according to claim 3, wherein the acid acceptor is at least one selected from the group consisting of lead oxide and epoxidized polybutadiene.

5. The rubber member according to claim 3 or 4, wherein the halogen-containing rubber contains 1 to 35% by mass of the acid acceptor.

6. The rubber member according to claim 3 or 4, wherein the halogen-containing rubber contains 10 to 30% by mass of the acid acceptor.

7. The rubber member according to any one of claims 1 to 6, wherein the halogen-containing rubber is crosslinked with a peroxide crosslinking agent and / or a sulfur-containing crosslinking agent.

8. The rubber member according to any one of claims 1 to 7, which is at least one selected from the group consisting of containers, piping, nozzles, tubes, tanks, joints, valves, pumps, spin chucks, O-rings, packings, gaskets, washers, and sealing materials.

9. The rubber member according to any one of claims 1 to 8, which is at least one selected from the group consisting of a container, a pipe, a nozzle, a tube, a tank, a joint, a valve, a pump, a spin chuck, an O-ring, a gasket, a washer, and a sealing material.

10. A rubber member according to any one of claims 1 to 9, wherein the corrosive substance has a pH of 6 or less or 8 or more.

11. The rubber member according to any one of claims 1 to 10, wherein the oxidation-reduction potential (vs. NHE) of the corrosive substance is -2.0 to 3.0 V.

12. The rubber member according to any one of claims 1 to 11, wherein the corrosive substance is at least one selected from the group consisting of acidic substances, basic substances, oxidizing substances, organic solvents, and salt water.

13. The rubber member according to claim 12, wherein the acidic substance is at least one selected from the group consisting of sulfuric acid, hydrofluoric acid, nitric acid, phosphoric acid, hydrochloric acid, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide and hydrochloric acid, and a mixed chemical solution of hydrogen peroxide and sulfuric acid.

14. The basic substance is TMAH([(CH ３ ) ４ N] ＋ [OH] － 14. The rubber member according to claim 12, wherein the chemical agent is at least one selected from the group consisting of an aqueous solution of sodium hydroxide, aqueous ammonia, and a mixed solution of aqueous hydrogen peroxide and aqueous ammonia.

15. The corrosive substance is hydrofluoric acid, nitric acid, phosphoric acid, hydrochloric acid, a mixed acid of hydrofluoric acid and nitric acid, a mixed solution of hydrogen peroxide and hydrochloric acid, a mixed solution of hydrogen peroxide and sulfuric acid, TMAH([(CH ３ ) ４ N] ＋ [OH] － ), a sodium hydroxide aqueous solution, a mixed chemical solution of hydrogen peroxide and ammonia water, and at least one selected from the group consisting of isopropyl alcohol.

16. The rubber member according to any one of claims 1 to 15, which is a member for semiconductor manufacturing related equipment.

17. The rubber member according to claim 16, wherein the semiconductor manufacturing related equipment is an equipment in which chemicals are used.

18. The rubber member according to any one of claims 1 to 17, wherein a test piece of the rubber member (size: 10 mm x 50 mm x 2 mm) is immersed in each of the following four chemical solutions for one week, and the relative mass after immersion, with the mass before immersion being 100, is 60 to 140 in all cases. (Chemical solution) 25 mass% TMAH([(CH ３ ) ４ N] ＋ [OH] － ) (80°C) 49% by mass hydrofluoric acid (70°C) Mixed acid of hydrofluoric acid and nitric acid (a mixture of 49% by mass hydrofluoric acid and 69-71% by mass nitric acid in a volume ratio of 1:100) (20°C) SPM (a mixture of 98% by mass sulfuric acid and 30-36% by mass hydrogen peroxide in a volume ratio of 2:1) (80°C) 19. The rubber member according to any one of claims 1 to 18, wherein a test piece of the rubber member (size: 10 mm x 50 mm x 2 mm) is immersed in each of the following nine chemical solutions for one week, and the relative values ​​of the mass after immersion are calculated, with the mass before immersion being 100. The average of the relative values ​​for the nine chemical solutions is 80 to 120, and the standard deviation is 20 or less. (Chemical solution) 25 mass% TMAH([(CH ３ ) ４ N] ＋ [OH] － ) (80°C) 100% by mass isopropyl alcohol (80°C) 49% by mass hydrofluoric acid (70°C) Mixed acid of hydrofluoric acid and nitric acid (a mixture of 49% by mass hydrofluoric acid and 69 to 71% by mass nitric acid in a volume ratio of 1:5) (20°C) Mixed acid of hydrofluoric acid and nitric acid (a mixture of 49% by mass hydrofluoric acid and 69 to 71% by mass nitric acid in a volume ratio of 1:100) (20°C) SPM (a mixture of 98% by mass sulfuric acid and 30 to 36% by mass hydrogen peroxide solution in a volume ratio of 2:1) (80°C) SC1 (a mixture of 25 to 28% by mass ammonia water, 30 to 36% by mass hydrogen peroxide solution, and deionized water in a volume ratio of 1:1:5) (70°C) SC2 (a mixture of 35 to 37% by mass hydrochloric acid, 30 to 36% by mass hydrogen peroxide solution, and deionized water in a volume ratio of 1:1:4) (70°C) 85% by mass phosphoric acid (80°C) 20. A rubber member according to any one of claims 1 to 19, wherein when a test piece of the rubber member (size: 10 mm x 50 mm x 2 mm) is immersed in 3.6 mass % hydrochloric acid at 23°C for one week, the amount of metal elution of each of 14 elements (Li, Na, Mg, Al, K, Ti, Cr, Mn, Fe, Ni, Cu, Zn, Ag, Cd) is 30 ppb or less.

21. A rubber member according to any one of claims 1 to 20, in which the amount of metal elution of two elements (Ca, Pb) is 10,000 ppb or less each when a test piece of the rubber member (size: 10 mm x 50 mm x 2 mm) is immersed in 3.6 mass % hydrochloric acid at 23°C for one week.

22. A rubber member according to any one of claims 1 to 21, wherein when a test piece of the rubber member (size: 10 mm x 50 mm x 2 mm) is immersed in 3.6 mass % hydrochloric acid at 23°C for one week, the amount of metal elution of 16 elements (Li, Na, Mg, Al, K, Ca, Ti, Cr, Mn, Fe, Ni, Cu, Zn, Ag, Cd, Pb) is 10,000 ppb or less for each.

23. A semiconductor manufacturing related device equipped with the rubber member according to any one of claims 1 to 22.

24. The semiconductor manufacturing related equipment according to claim 23, which is at least one selected from the group consisting of semiconductor manufacturing equipment and equipment related to semiconductor manufacturing equipment.

25. The semiconductor manufacturing related equipment according to claim 24, wherein the semiconductor manufacturing equipment is at least one selected from the group consisting of photolithography process equipment, thin film formation / etching / cleaning / drying equipment, inspection / evaluation equipment / manufacturing equipment, resist processing equipment, etching equipment, cleaning / drying equipment, CVD equipment, thin film formation equipment, CMP equipment, processing equipment, aging equipment, and inspection equipment, and the semiconductor manufacturing equipment related equipment is at least one selected from the group consisting of pure water / chemical equipment, gas equipment, clean room equipment, and manufacturing related equipment.

26. The photolithography process equipment is at least one selected from the group consisting of a coating equipment, a resist stripping equipment, a developing equipment (developer), and a descum equipment; the thin film formation / etching / cleaning / drying equipment is at least one selected from the group consisting of a vacuum deposition equipment, a cleaning equipment, a drying equipment, and a scrub cleaning equipment; the inspection / evaluation equipment / manufacturing equipment is a defect repair equipment; the resist processing equipment is at least one selected from the group consisting of a coating equipment, a developing equipment, a resist stripping equipment, and an ashing equipment; the etching equipment is at least one selected from the group consisting of a dry etching equipment and a wet etching equipment; the cleaning / drying equipment is at least one selected from the group consisting of a wet cleaning equipment, a scrub cleaning equipment, and a drying equipment; the CVD equipment is at least one selected from the group consisting of a high-pressure CVD equipment, a SACVD equipment, a low-pressure CVD equipment, a plasma CVD equipment, a metal CVD equipment, and an ALD equipment; the thin film forming apparatus is at least one selected from the group consisting of a vacuum deposition apparatus, a silicon epitaxial growth apparatus, a compound semiconductor epitaxial apparatus (MOCVD apparatus, MBE apparatus), and a plating apparatus; the CMP apparatus is at least one selected from the group consisting of a CMP apparatus and a CMP cleaning apparatus; the processing apparatus is a bump plating apparatus; the aging apparatus is at least one selected from the group consisting of an aging apparatus, a burn-in apparatus, an IC insertion apparatus, and an IC extraction apparatus; the inspection apparatus is a life test apparatus; the pure water / chemical liquid apparatus is at least one selected from the group consisting of a chemical supply apparatus, a slurry supply apparatus, a chemical purification apparatus, and a waste liquid treatment apparatus; the gas apparatus is at least one selected from the group consisting of a gas generation apparatus, a gas purification apparatus, a gas mixing apparatus, a gas detection apparatus, and an exhaust gas treatment apparatus; the clean room apparatus is at least one selected from the group consisting of a thermal chamber and an environmental test apparatus; 26. The semiconductor manufacturing related equipment according to claim 25, wherein the manufacturing related equipment is at least one selected from the group consisting of a jig cleaning / drying device, a flow control device, a packaging device, and a liquid / gas measuring device.

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