Radar communication device having electromagnetic interference shielding and protecting circuit

Abstract

The present invention relates to a radar communication device having an electromagnetic interference shielding and protecting circuit and, more specifically, to a radar communication device having a protecting circuit capable of measuring the strength of signals and adjusting the path and strength of signals on the basis of the measured strength, thereby preventing the occurrence of failures of elements due to reflected signals or overvoltage signals. The radar communication device having a protection circuit according to the present invention comprises: a transmitted signal processing unit; a received signal processing unit; a wireless transmitting / receiving unit; a signal sensing portion connected to the wireless transmitting / receiving unit so as to sense the strength of signals transferred from the wireless transmitting / receiving unit toward the received signal processing unit; a first switch connected to the signal sensing portion so as to operate on the basis of the strength of signals sensed by the signal sensing portion; a first resistive end portion and a signal connecting line electrically connected to the first switch such that signals can be transferred by operations of the first switch, and logically disposed in parallel such that signals can be transferred alternately with each other; and a controller for controlling the first switch on the basis of the strength of signals sensed by the signal sensing portion. The controller operates the first switch such that signals are transferred to the signal connecting line if the strength of signals sensed by the signal sensing portion is within a preconfigured value, and operates the first switch such that signals are transferred to the first resistive end portion if the strength of signals sensed by the signal sensing portion exceeds the preconfigured value.

Description

Radar communication device with electromagnetic interference shielding and protection circuit

[0001] The present invention relates to a radar communication device having an electromagnetic wave interference shielding and protection circuit, and more specifically, to a communication device having a partition wall formed between each element, and electromagnetic wave shielding is achieved by the partition wall, thereby preventing errors due to electromagnetic wave interaction, and at the same time, the partition wall is formed by alternately arranging two materials having different thermal conductivities and laminating them in different directions, thereby providing excellent thermal conductivity, preventing delamination at the interface due to thermal expansion, and measuring the intensity of a signal, and controlling the path of the signal and the intensity of the signal based on the measured intensity, thereby preventing the occurrence of an element failure due to a reflected signal or an overvoltage signal.

[0002]

[0003] Systems that transmit and receive wireless signals, such as radar systems or communication systems, basically include many types of semiconductor devices, and communication devices such as transmission and reception modules are formed through combinations of these semiconductor devices.

[0004] These wireless communication devices utilize a dual RF signal path for transmitting or receiving RF signals, and include a separate dual control device to perform path changes for RF signals, real-time status detection of the communication device, and real-time control.

[0005] FIGS. 1 to 3 are examples of a conventional communication device for wireless transmission and reception, which may be configured to include a hardware transmission and reception unit (A) connected to a data processing unit such as an FPGA, a switch, a drive amplifier (DRA), a high-power amplifier (HPA), a limiter (LMT), a low-noise amplifier (LNA), a circulator (CLR), and a wireless transmission and reception unit (B).

[0006] An antenna (ANT) for transmitting and receiving wireless signals may be connected to the wireless transceiver (B), and although not shown, the hardware transceiver (A) may include a control unit or core chip for controlling the transmission signal path and the reception signal path.

[0007] In such a communication device for wireless transmission and reception, a transmission signal path and a reception signal path can be selected by controlling a switch and a circulator (CLR) through a control circuit depending on whether a signal is being transmitted or received.

[0008] Here, the transmission signal path, as illustrated in FIG. 1, refers to a path along which a transmission signal (Output Signal) is sequentially transmitted from a hardware transceiver (A) through a switch (Switch), a drive amplifier (DRA), a high power amplifier (HPA), and a circulator (CLR) to a wireless transceiver (B), and the reception signal path, as illustrated in FIG. 2, refers to a path along which a reception signal (Input Signal) is sequentially transmitted from a wireless transceiver (B) through a circulator (CLR), a limiter (LMT), a low noise amplifier (LNA), and a switch (Switch) to a hardware transceiver (A), and this path definition applies equally to the claims and the entire description of the invention relating to a communication device having a protection circuit according to the present invention.

[0009] However, these conventional communication devices have a problem in that electromagnetic waves are generated from each element in the process of processing a transmission signal or a reception signal, and these electromagnetic waves affect adjacent elements, causing errors.

[0010] Moreover, as the bandwidth of wireless communication has recently expanded and the frequency of use for commercialization of 6G beyond 5G has increased, the generation of electromagnetic waves has increased, and accordingly, the error rate due to interaction between each element has increased.

[0011] In addition, as the integration rate and computational speed of devices increase to process high-frequency signals, the heat generated is also increasing, and countermeasures for this are also necessary.

[0012] Meanwhile, conventional communication devices also had a problem in that, during the process of transmitting a signal, the transmission signal could be reflected or input from the wireless transceiver due to mismatch between the communication device and the antenna, a short circuit between the antenna and the receiver, or the antenna not being installed, or signal reflection due to various reasons at a short distance, and the reflected signal could be input back into the circuit or element inside the communication device.

[0013] At this time, the circulator included in the conventional communication device prevented reflected signals from entering internal components, particularly high-power amplifiers. Specifically, the circulator is a passive, non-reciprocal element with a circular structure and three terminals, configured to output a signal input to one terminal to the terminal immediately adjacent to it. It only transmits signals in the forward direction and not in the reverse direction.

[0014] Therefore, if a reflected signal is generated for any reason and input to the circulator, the reflected signal is not transmitted to the high-power amplifier located in the transmission signal path, but is transmitted only to the reception signal path, thereby preventing the reflected signal from being input to the high-power amplifier.

[0015] In other words, the reflected signal introduced into the receiving signal path by the circulator is transmitted to the limiter, and the limiter reduces the intensity of the reflected signal to be below the set voltage when it is above the limit level of the limiter, so that the failure or damage to the internal components of the communication device due to the introduction of the reflected signal can be prevented to some extent.

[0016] However, there is a limit to the method of limiting the intensity of the reflected signal using such a limiter, and on the other hand, due to the characteristics of the limiter, when the limit is exceeded, the exceeded reflected signal is reflected again from the limiter and flows into the circulator, as shown in Fig. 3.

[0017] In this case, depending on the characteristics of the circulator, an excessive reflected signal flows into the high power amplifier (HAP), which is the terminal right next to it, and a problem occurs in which this reflected signal damages the high power amplifier.

[0018] Therefore, this type of circuit configuration is not effective in preventing damage or failure of high-power amplifiers, and also has the problem that it does not fit with the recent trend of miniaturization and lightweighting because the circulator applied to the circuit configuration for wireless transmission and reception is large, heavy, and expensive.

[0019] [Prior Art Literature]

[0020] (Patent Document 1) Korean Patent No. 10-2213195 (Title of Invention: Transmitting / receiving circuit device for wireless-optical repeater)

[0021] (Patent Document 2) Japanese Patent Publication No. 2012-249136 (Title of invention: Receiver circuit, transmitter circuit, wireless transmission / reception circuit, and frequency conversion method)

[0022]

[0023] The present invention is intended to solve the above-mentioned problem, and the purpose of the present invention is to provide a radar communication device having a partition wall that can prevent errors caused by interaction between elements by forming a partition wall to shield electromagnetic interference (EMI) between each element.

[0024] In addition, the present invention aims to provide a radar communication device having a bulkhead that can minimize thermal deformation while maintaining heat transfer characteristics for heat dissipation of an element by configuring the bulkhead into a plurality of layers, and alternately arranging and laminating materials having different thermal conductivities in each layer while making the arrangement directions different from each other.

[0025] In addition, the present invention aims to provide a radar communication device having a barrier that can prevent the occurrence of a failure of an element due to a reflected signal or an overvoltage signal by measuring the intensity of a signal and controlling the path of the signal and the intensity of the signal based on the measured intensity.

[0026]

[0027] In order to achieve the object of the present invention, a radar communication device having an electromagnetic interference shielding and protection circuit according to the present invention includes a transmission signal processing block for processing a transmission signal, a reception signal processing block arranged in parallel with the transmission signal processing block and for processing a reception signal, a wireless transmission / reception block for transmitting a wireless transmission signal or a wireless reception signal transmitted / received through an antenna, and a first path control block arranged between the transmission signal processing block, the reception signal processing block, and the wireless transmission / reception block, for controlling a transmission path of the signal so that a signal transmitted / received through the wireless transmission / reception block is transmitted / received to either the transmission signal processing block or the reception signal processing block, and a core chip block connected to the transmission signal processing block, the reception signal processing block, and the first path control block, and having a central processing unit for storing, calculating, and outputting signal information, characterized in that a partition is formed at a boundary between the transmission signal processing block, the reception signal processing block, the first path control block, the wireless transmission / reception block, and the core chip block.

[0028] Here, the bulkhead may include at least one metal selected from iron, cobalt, nickel, aluminum, and copper.

[0029] In addition, the barrier wall is formed of a plurality of shielding layers, and at least one shielding layer is formed by alternately arranging different first and second metals, and has an electromagnetic interference shielding and protection circuit.

[0030] In addition, in the plurality of shielding layers, the arrangement direction of the first metal and the second metal of one shielding layer is different from the arrangement direction of the first metal and the second metal of another shielding layer.

[0031] In addition, the first metal may be copper (Cu) or a copper alloy, and the second metal may be a metal or an alloy thereof having a smaller thermal expansion coefficient than copper.

[0032] Additionally, the second metal may include any one selected from molybdenum (Mo), a molybdenum (Mo) alloy, tungsten (W), a tungsten (W) alloy, Kovar, Invar, and Alloy 42.

[0033] Additionally, the first metal and the second metal can be diffusion bonded.

[0034] Additionally, a nickel diffusion layer may be further formed in the adjacent area where the diffusion bonding is performed.

[0035] In addition, a radar communication device having an electromagnetic interference shielding and protection circuit includes a signal detection block that is connected to the wireless transceiver block and detects the intensity of a signal transmitted from the wireless transceiver block toward the reception signal processing block, a second path control block that is connected to the signal detection block and operates based on the intensity of the signal detected by the signal detection block, a second resistive termination block that is electrically connected to the second path control block so that a signal can be transmitted by the operation of the second path control block, but is arranged logically in parallel with each other so that a signal can be transmitted alternatively, and a signal connection line, and a control unit that controls the second path control block based on the intensity of the signal detected by the signal detection block, wherein the control unit operates the second path control block so that a signal is transmitted to the signal connection line when the intensity of the signal detected by the signal detection block is within a preset value, and The second path control block can be operated so that the signal is transmitted to the second resistive termination block when the signal strength exceeds a preset value.

[0036] In addition, the radar communication device having the electromagnetic interference shielding and protection circuit further includes a switch protection block arranged in parallel with the second path control unit block so that an electrical branch point is formed between the second path control unit block and the signal detection unit block, and a signal can be separated and transmitted at the branch point, and a signal transmitted from the signal detection unit block to the second path control unit block is branched at the branch point and input to the switch protection block, and the switch protection block provides an impedance value that varies according to the intensity of the input signal, so that the intensity of the signal transmitted to the second path control unit block can be adjusted.

[0037] In addition, the radar communication device having an electromagnetic interference shielding and protection circuit further includes a first resistive termination block that is arranged logically in parallel with the transmission signal processing block and the reception signal processing block and can be electrically connected to the signal connection line by the first path control block, and the control unit can operate the first path control block so that the signal is transmitted to the reception signal processing block when the intensity of the signal detected by the signal detection block is within a preset value, and can operate the first path control block so that the signal is transmitted to the first resistive termination block when the intensity of the signal detected by the signal detection block exceeds the preset value.

[0038] In addition, the radar communication device having the electromagnetic interference shielding and protection circuit may further include a third path control block that operates based on the intensity of a signal detected between all blocks connected to the core chip block, and a third resistive termination block that is electrically connected to the third path control block so that a signal can be transmitted by the operation of the third path control block, but is arranged logically in parallel with each other so that a signal can be transmitted alternatively.

[0039]

[0040] According to the present invention, a partition is formed between elements, and electromagnetic wave shielding is achieved by the partition, thereby preventing errors due to electromagnetic wave interaction.

[0041] In addition, according to the present invention, the bulkhead is formed by alternately arranging two materials having different thermal conductivities and laminating them in different directions, thereby improving thermal conductivity and preventing delamination at the interface due to thermal expansion.

[0042] In addition, according to the present invention, by measuring the intensity of a signal and controlling the path of the signal and the intensity of the signal based on the measured intensity, it is also possible to prevent the occurrence of a failure of a device due to a reflected signal or an overvoltage signal.

[0043] In addition, the effect of preventing device failure can be further increased by sequentially arranging resistive elements and controlling the signal path.

[0044] In addition, by adopting a switch protection unit, it is possible to prevent the switch itself from malfunctioning due to a reflected signal or overvoltage signal.

[0045] In addition, the switch protection unit can prevent switch failure while transmitting a signal to the switch by providing variable impedance including an impedance variation unit.

[0046] In addition, by employing a voltage limiter in the switch protection unit, the impedance value increases when the voltage is low, effectively preventing current from flowing to the switch protection unit, and the impedance value decreases when the voltage is high, allowing current to flow, thereby protecting the switch, thereby increasing power efficiency and preventing power waste.

[0047]

[0048] Figures 1 to 3 are configuration diagrams of a conventional communication device.

[0049] Figure 4 is a configuration diagram of a radar communication device having an electromagnetic interference shielding and protection circuit according to one embodiment of the present invention.

[0050] FIG. 5 is an exploded perspective view of a radar communication device having an electromagnetic interference shielding and protection circuit according to one embodiment of the present invention.

[0051] FIG. 6 is a perspective view of a bulkhead of a radar communication device having an electromagnetic interference shielding and protection circuit according to an embodiment of the present invention.

[0052] FIG. 7 is an exploded perspective view of a bulkhead of a radar communication device having an electromagnetic interference shielding and protection circuit according to an embodiment of the present invention.

[0053] FIG. 8 is a diagram for explaining a shielding layer of a bulkhead of a radar communication device having an electromagnetic wave interference shielding and protection circuit according to an embodiment of the present invention.

[0054] FIG. 9 is a diagram for explaining a nickel diffusion layer of a bulkhead of a radar communication device having an electromagnetic interference shielding and protection circuit according to an embodiment of the present invention.

[0055] FIG. 10 is a diagram illustrating a method for manufacturing a bulkhead of a radar communication device having an electromagnetic interference shielding and protection circuit according to an embodiment of the present invention.

[0056] FIGS. 11 to 13 are diagrams for explaining a method for manufacturing a shielding layer of a bulkhead of a radar communication device having an electromagnetic wave interference shielding and protection circuit according to an embodiment of the present invention.

[0057] Figure 14 is a configuration diagram of a signal transmission system of a radar communication device having an electromagnetic interference shielding and protection circuit according to an embodiment of the present invention.

[0058] Figure 15 is a configuration diagram of a radar communication device having an electromagnetic interference shielding and protection circuit according to an embodiment of the present invention when receiving a signal.

[0059] FIG. 16 is a diagram showing the operation of a second path control block in a radar communication device having an electromagnetic interference shielding and protection circuit according to an embodiment of the present invention when the signal intensity detected by the signal detection block exceeds a preset value.

[0060] FIG. 17 is a configuration diagram showing the operation of the first path control block in a radar communication device having an electromagnetic interference shielding and protection circuit according to an embodiment of the present invention when the signal intensity detected by the signal detection block exceeds a preset value.

[0061] Fig. 18 is a configuration diagram of a radar communication device having an electromagnetic interference shielding and protection circuit according to an embodiment of the present invention, in which a switch protection block is employed.

[0062] FIG. 19 and FIG. 20 are configuration diagrams of a switch protection block of a radar communication device having an electromagnetic interference shielding and protection circuit according to an embodiment of the present invention.

[0063] FIG. 21 and FIG. 22 are configuration diagrams of a voltage limiter of a radar communication device having an electromagnetic interference shielding and protection circuit according to an embodiment of the present invention.

[0064]

[0065] The features and effects of the present invention described above will become more apparent through the following detailed description with reference to the accompanying drawings, so that those skilled in the art can easily practice the technical idea of ​​the present invention. The present invention can be modified in various ways and can take many forms, and specific embodiments are illustrated in the drawings and described in detail in the text. However, this is not intended to limit the present invention to a specific disclosed form, but should be understood to include all modifications, equivalents, and substitutes included in the spirit and technical scope of the present invention. The terminology used in this application is only for the purpose of describing specific embodiments and is not intended to limit the present invention.

[0066] Hereinafter, the configuration, effects and preferred embodiments of the present invention will be described in detail with reference to the attached drawings.

[0067] The present invention relates to a radar communication device having a protection circuit capable of protecting a circuit from a reflected signal or an overvoltage signal as described above. To this end, a radar communication device having a protection circuit according to an embodiment of the present invention includes, as illustrated in FIG. 4, a transmission signal processing block (200), a reception signal processing block (300), a wireless transceiver block (400), a core chip block (500), a first path control block (600), and a partition wall (100), and as illustrated in FIG. 18, may further include a first resistive termination block (620), a signal detection block (900), a branch point (J), a switch protection block (920), a signal connection line (650), a second path control block (700), a second resistive termination block (720), a third path control block (800), and a third resistive termination block (820).

[0068] The transmission signal processing block (200) is a configuration for processing a signal to be transmitted, and may include a driving amplifier and a high-power amplifier connected to the hardware transmission / reception unit (A) as described above, but is not limited thereto.

[0069] This transmission signal processing block (200) modulates or amplifies signals generated from a mobile phone, control unit body, MCU, FPGA, hardware, etc. to enable wireless communication, and various elements can be combined to form this.

[0070] The receiving signal processing block (300) is a configuration that processes a received signal, and may be configured with a limiter, a low-noise amplifier, etc. as described above, but is not limited thereto.

[0071] This reception signal processing block (300) also plays a role in demodulating, removing noise, or amplifying a signal received as a wireless signal so that it can be utilized in a mobile phone, control unit body, MCU, FPGA, hardware, etc., and various elements for this purpose can be combined and formed.

[0072] The wireless transceiver block (400) is a configuration for transmitting and receiving wireless signals, and can be connected to an antenna (not shown). Other configurations not mentioned may be included between the antenna and the radar communication device having a protection circuit according to an embodiment of the present invention, but it is arranged to be closest to the antenna and is provided so that signals can be exchanged with the antenna through the wireless transceiver block (400).

[0073] This wireless transmitter / receiver block (400) receives a wireless signal received through an antenna and transmits it toward the reception signal processing block (300).

[0074] The core chip block (500) is a central processing unit that stores and calculates signal information and outputs it, and can be connected to the transmission signal processing block (200), the reception signal processing block (300), and the first path control block (600).

[0075] The first path control block (600), as illustrated in FIG. 4, is positioned between the transmission signal processing block, the reception signal processing block (200, 300), and the wireless transmission / reception block (400), and controls the signal transmission path so that a signal transmitted / received through the wireless transmission / reception block (400) is transmitted / received to either the transmission signal processing block (200) or the reception signal processing block (300).

[0076] As shown in FIGS. 4 and 5, the bulkhead (100) is formed at the boundary where each of the transmitting signal processing block (200), the receiving signal processing block (300), the first path control block (600), and the wireless transmitting / receiving block (400) is adjacent to each other.

[0077] Here, after stacking a partition wall that shields all of the blocks formed above on top, by stacking a core chip block (500) on top of this partition wall (100), the core chip block (500) that must be protected with the highest priority can be stacked on top.

[0078] As illustrated in Fig. 5, the core chip block (500) can be stacked on top of the bulkhead (100) to shield electromagnetic interference with the blocks installed below. Since the core chip block (500) must be protected while also being connected to the transmission signal processing block (200) and the reception signal processing block (300), the core chip block (500) can be modularized and connected to the blocks via bonding wires (510).

[0079] The bonding wire (510) may be connected to the lower block along the outside of the bulkhead (100), but the exterior may also be neatly finished by perforating the bulkhead (100) to the size of the bonding wire (510) and then connecting it through the inside.

[0080] These bulkheads (100) include at least one metal selected from among iron, cobalt, nickel, aluminum, and copper, which are materials capable of shielding electromagnetic waves while having high thermal conductivity, in order to shield electromagnetic interference (EMI) generated from each block and to dissipate the generated heat to the outside.

[0081] The bulkhead (100) may be composed of a plurality of shielding layers (100a, 100b), as illustrated in FIG. 6.

[0082] Here, the bulkhead (100) is formed by front and rear shielding layers including a front shielding layer (180) and a rear shielding layer (190) made of at least one metal selected from among iron, cobalt, nickel, aluminum, and copper, and at least one shielding layer (100a or 100b) can be formed by alternately arranging different types of first metal (110) and second metal (130).

[0083] For reference, the front and rear shielding layers can preferably be formed of copper (Cu) or copper alloy layers.

[0084] Here, Fig. 7 is an exploded perspective view of the bulkhead (100), Fig. 8 is a shielding layer of the bulkhead (100), and Fig. 9 is a drawing for explaining the nickel diffusion layer (150) of the bulkhead.

[0085] Referring to FIGS. 7 and 8, the first metal (110) and the second metal (130) of the shielding layer (100a or 100b) are formed by being alternately arranged. A method for forming such a shielding layer (100a, 100b) will be described later.

[0086] In stacking the plurality of shielding layers, the partition wall (100) is formed so that the metal arrangement direction formed by the first metal (110) and the second metal (130) of one shielding layer (100a) (corresponding to two shielding layers (100a, 100b) in this embodiment, as shown in FIG. 7) is different from the arrangement direction of the first metal (110) and the second metal (130) of the other shielding layer (100b).

[0087] Here, the first metal (110) is copper (Cu) or a copper alloy, and the second metal (130) may be made of a metal or an alloy thereof having a lower thermal expansion coefficient than the copper.

[0088] Accordingly, in each block position, EMI shielding is achieved by the first metal (110) and a heat dissipation effect due to excellent thermal conductivity can be expected, and on the other hand, the second metal (130) is composed of a metal or an alloy thereof having a smaller thermal expansion coefficient than the first metal (110), copper, thereby preventing thermal deformation of the first metal (110) and maintaining the shape of the partition wall (100).

[0089] This second metal (130) may include any one selected from molybdenum (Mo), a molybdenum (Mo) alloy, tungsten (W), a tungsten (W) alloy, Kovar, Invar, and Alloy 42.

[0090] The first metal (110) and the second metal (130) can be formed through diffusion bonding. In other words, the second metal (130) and the first metal (110) can be alternately arranged and then bonded by applying temperature and pressure.

[0091] In this process, diffusion bonding can be performed while heating the first metal (110) and the second metal (130) below their melting points. As a result, the first metal (110) and the second metal (130) can be directly bonded in a solid state without melting.

[0092] That is, each shielding layer (100a, 100b) can be formed of a clad alloy or clad plate in which a first metal (110) and a second metal (130) are alternately bonded to each other.

[0093] In order to improve the bonding strength between the first metal (110) and the second metal (130), some of the components of the first metal (110) may be included in the second metal (130).

[0094] For example, when the first metal (110) is manufactured from copper (Cu), the second metal (130) can be manufactured from a molybdenum-copper alloy (Mo-Cu), more preferably a molybdenum-copper alloy (Mo-Cu) composed of 30 to 50% by weight of copper (Cu) and the remainder of molybdenum (Mo). Through this, the diffusion bonding effect can be improved by including the components of the first metal (110) in the second metal (130), thereby strengthening the bonding strength between the two metals.

[0095] Before diffusion bonding the first metal (110) and the second metal (130), the first metal (110) and the second metal (130) can be bonded while forming a nickel coating layer (170) on the second metal (130). Through this, a nickel diffusion layer (150) can be formed in an adjacent area where the first metal (110) and the second metal (130) are diffusion bonded. At this time, the nickel coating layer (170) can be formed by plating nickel (Ni) on the outer surface of the second metal (130), but is not limited thereto, and can be manufactured by various methods such as spraying and immersion.

[0096] That is, the first metal (110) and the second metal (130) can be joined by diffusion bonding while heating below the melting points of the first metal (110) and the second metal (130), and in the process, a nickel coating layer (170) is formed on the second metal (130) so that nickel diffuses in a solid state to join the first metal (110) and the second metal (130).

[0097] According to an embodiment, the present invention can adjust the thickness of the nickel coating layer (170) to an appropriate level so that a nickel interface layer is not formed between the first metal (110) and the second metal (130), and all nickel (Ni) can be diffused into either the first metal (110) or the second metal (130).

[0098] Typically, nickel (Ni) is a metal with relatively low thermal conductivity, with a thermal conductivity of 90 to 92 W / mK. On the other hand, the first metal (110) and the second metal (130) may be provided as metals with higher thermal conductivity than nickel (Ni). For example, when the first metal (110) is copper (Cu) and the second metal (130) is a molybdenum alloy or a tungsten alloy, the thermal conductivity of copper (Cu) is 386 to 398 W / mK, the thermal conductivity of a molybdenum alloy is 142 to 143 W / mK, and the thermal conductivity of a tungsten alloy is 166 to 178 W / mK, and therefore, the thermal conductivity may be higher than that of nickel (Ni). For this reason, if the nickel (Ni) does not diffuse and remains as an interface layer, the thermal conductivity may decrease rapidly.

[0099] To improve this, the present invention controls the thickness of the nickel coating layer (170) to 10 to 40 nm to prevent a nickel interface layer from being formed between the first metal (110) and the second metal (130), and allows all nickel (Ni) to diffuse into the first metal (110) or the second metal (130) to form a nickel diffusion layer (150). A detailed description of the thickness of the nickel coating layer (170) will be provided later.

[0100] Referring to FIG. 9, the nickel diffusion layer (150) refers to a region formed by nickel (Ni) diffusing into the first metal (110) and the second metal (130), respectively. In other words, the nickel diffusion layer (150) may be formed in some regions within the first metal (110) and the second metal (130) by nickel (Ni) coated on the second metal (130) diffusing into the first metal (110) and the second metal (130) during the diffusion bonding process.

[0101] The nickel diffusion layer (150) may be formed in an area adjacent to the bonding surface with the second metal (130) within the first metal (110), and at the same time, may be formed in an area adjacent to the bonding surface with the first metal (110) within the second metal (130). For convenience of explanation, the nickel diffusion layer (150) formed in an area adjacent to the bonding surface with the second metal (130) within the first metal (110) is defined as a first nickel diffusion layer (150a), and the nickel diffusion layer (150) formed in an area adjacent to the bonding surface with the first metal (110) within the second metal (130) is defined as a second nickel diffusion layer (150b). In the embodiment, the nickel (Ni) is depicted as being densely concentrated in a part of the first metal (110) and densely concentrated in the second metal (130), but is not limited thereto, and may be diffused over the entire area centered on the area adjacent to the joint surface with the second metal (130) within the first metal (110), and may be diffused over the area adjacent to the joint surface with the first metal (110) within the second metal (130).

[0102] According to an embodiment, the first metal (110) can form a solid solution with the nickel (Ni). For example, when the first metal (110) is copper (Cu), the copper (Cu) and the nickel (Ni) have the same crystal structure as a face-centered cubic structure (FCC) and have similar atomic radii and electronegativities, so that they can be completely dissolved in each other. For this reason, the nickel diffusion layer (150) within the first metal (110) can distribute the copper (Cu) and the nickel (Ni) in the form of a solid solution.

[0103] The second metal (130) may also be provided with nickel (Ni) to form a second nickel diffusion layer (150b). For example, when the second metal (130) is provided with molybdenum (Mo), the nickel (Ni) may be diffused into the molybdenum (Mo) layer to form a Ni-Mo diffusion layer, and when the second metal (130) is provided with a tungsten (W) layer, the nickel (Ni) may be diffused into the tungsten (W) layer to form a Ni-W diffusion layer.

[0104] Through the diffusion bonding of the nickel (Ni), the present invention can improve the tensile strength of the partition wall (100) to 300 MPa or more, and can increase the tensile strength (MPa) by about 180 MPa or more compared to the partition wall (100) made of the same material without the nickel diffusion layer (150).

[0105] Through this, the present invention can prevent the delamination phenomenon at the interface where the first metal (110) and the second metal (130) come into contact, thereby improving the thermal conductivity of the partition (100) by about 20% or more compared to a partition for conventional shielding, and can reduce the thermal expansion coefficient by about 15% or more.

[0106] According to an embodiment, when the thickness of the first metal (110) is defined as T1 and the thickness of the second metal (130) is defined as T2, T1 and T2 can satisfy the following relationship 1.

[0107] [Relationship 1]

[0108]

[0109] (In the above relational expression 1, T1 is the thickness of the first metal, and T2 is the thickness of the second metal)

[0110] If the thickness (T2) of the second metal (130) is less than 0.5 times the thickness (T1) of the first metal (110), a delamination phenomenon may occur between the first metal (110) and the second metal (130) due to thermal deformation of the first metal (110) having a relatively high coefficient of thermal expansion. This causes a decrease in the thermal conductivity of the heat-conducting layer and an increase in the coefficient of thermal expansion.

[0111] On the other hand, if the thickness (T2) of the second metal (130) exceeds 5 times the thickness (T1) of the first metal (110), the thickness of the first metal (110) in the thermally conductive layer may be relatively reduced, thereby reducing the thermal conductivity.

[0112] For this reason, it is preferable that the thickness (T1) of the first metal (110) and the thickness (T2) of the second metal (130) are formed within a range that satisfies the above relationship 1.

[0113] More preferably, the above T1 and the above T2 can satisfy the following relationship 2.

[0114] [Relationship 2]

[0115]

[0116] (In the above relational expression 2, T1 is the thickness of the first metal, and T2 is the thickness of the second metal)

[0117] Next, with reference to FIGS. 10 to 13, a method for manufacturing a partition wall (100) according to an embodiment of the present invention will be described.

[0118] FIG. 10 is a flowchart for explaining a method for manufacturing a plurality of shielding layers according to an embodiment of the present invention, FIG. 11 is a drawing for explaining a step of bonding a first metal layer and at least one second metal layer having a nickel coating layer formed on the surface according to an embodiment of the present invention, FIG. 12 is a drawing for explaining an appearance of manufacturing a shielding layer by cutting the formed product manufactured in FIG. 11, and FIG. 13 is a drawing for explaining an appearance of manufacturing a partition wall (100) by stacking a plurality of shielding layers between front and rear shielding layers so that the metal directions are perpendicular to each other and arranging them in different directions.

[0119] A method for manufacturing a partition wall (100) according to an embodiment of the present invention may include a step of preparing a plurality of heat-conducting layers formed by alternately arranging different types of first metals (110) and second metals (130), a step of preparing a front shielding layer (180) and a rear shielding layer (190), a step of laminating a plurality of shielding layers between the front and rear shielding layers, such that a metal arrangement direction formed by the first metal (110) and the second metal (130) of one shielding layer (100a) among the plurality of shielding layers is different from a metal arrangement direction formed by the first metal (110) and the second metal (130) of another shielding layer (100b) among the plurality of shielding layers, and a step of applying temperature and pressure to the front and rear shielding layers and the plurality of shielding layers (100a, 100b) to bond the front and rear shielding layers and the plurality of shielding layers (100a, 100b).

[0120] In addition, referring to FIG. 10, the step of preparing a plurality of shielding layers (100a, 100b) may include a step of preparing at least one first metal layer including a first metal (110) or an alloy thereof, a step of preparing at least one second metal layer including a second metal (130) or an alloy thereof having a smaller thermal expansion coefficient than the first metal (110), a step of alternately stacking the first metal layer and the second metal layer, a step of applying temperature and pressure to the first metal layer and the second metal layer to bond the first metal layer and the second metal layer to manufacture a formed product, and a step of cutting the formed product along the direction in which the first metal (110) and the second metal (130) are stacked to manufacture a thermally conductive layer in the form of a plate.

[0121] First, a first metal layer including a first metal (110) or an alloy thereof and a second metal layer including a second metal (130) or an alloy thereof having a lower thermal expansion coefficient than the first metal (110) can be prepared. The first metal (110) and the second metal (130) have been described in detail above, so their descriptions will be omitted.

[0122] According to an embodiment, the second metal layer may have a nickel coating layer (170) formed on its surface, and more preferably, a nickel coating layer (170) of 10 to 40 nm may be formed.

[0123] If the thickness of the nickel coating layer (170) is less than 10 nm, the nickel (Ni) diffused into the first metal layer and the second metal layer is insufficient, so the effect of improving the bonding strength can hardly be expected. On the other hand, if the thickness of the nickel coating layer (170) exceeds 40 nm, the nickel (Ni) of the nickel coating layer (170) is not completely diffused and some of it remains, which may form a nickel (Ni) interface layer between the first metal layer and the second metal layer. The nickel (Ni) interface layer may hinder heat transfer of the heat dissipation substrate, thereby reducing the thermal conductivity of the heat dissipation substrate and increasing the thermal expansion coefficient. As a result, the heat dissipation efficiency of the partition wall (100) may be reduced.

[0124] In particular, when the first metal layer is copper (Cu) and the second metal layer is a molybdenum alloy or a tungsten alloy, the thermal conductivity of copper (Cu) is 386 to 398 W / mK, that of a molybdenum alloy is 142 to 143 W / mK, and that of a tungsten alloy is 166 to 178 W / mK, and therefore the thermal conductivity may be higher than that of nickel (Ni). For this reason, when a nickel interface layer is formed between the first metal layer and the second metal layer, the thermal conductivity of the heat dissipation substrate may be rapidly reduced. To prevent this, the present invention adjusts the thickness of the nickel coating layer (170) to 40 nm or less so that a nickel interface layer is not formed and all nickel (Ni) can diffuse into the first metal layer or the second metal layer.

[0125] For this reason, the thickness of the nickel coating layer (170) is preferably 10 to 40 nm, and more preferably 20 to 30 nm.

[0126] Thereafter, as shown in Fig. 11, the first metal layer and the second metal layer, or the first metal layer and the second metal layer on which the nickel coating layer (170) is formed, are alternately laminated, and then temperature and pressure are applied to bond the first metal layer and the second metal layer. Through this, the first metal layer and the second metal layer can be diffusion bonded to manufacture a formed product.

[0127] In this process, when a nickel coating layer (170) having a thickness of 10 to 40 nm is formed on the second metal layer, the nickel (Ni) element forming the nickel coating layer (170) can diffuse into either the first metal layer or the second metal layer to form a nickel diffusion layer (150) in each metal layer. Through this, the present invention can further improve the bonding strength between the first metal layer and the second metal layer.

[0128] According to an embodiment, the present invention can control the bonding temperature and pressure of the nickel coating layer (170) to an appropriate level to improve the bonding strength.

[0129] The bonding temperature is preferably 800 to 900 degrees.

[0130] If the bonding temperature is less than 800 degrees, the nickel coating layer (170) may not be completely diffused, preventing complete diffusion bonding. On the other hand, if the bonding temperature exceeds 900 degrees, the first metal layer or the second metal layer may melt or undergo thermal deformation. For this reason, the bonding temperature is preferably 800 to 900 degrees, and more preferably 850 to 900 degrees.

[0131] In addition, the pressure during the above bonding is 1 to 100 It is desirable that.

[0132] The above pressure is 1 If the pressure is less than 100, the nickel (Ni) may not be completely diffused due to insufficient pressure during diffusion bonding of the first metal layer and the second metal layer, and a nickel interface layer may be formed. As described above, the nickel interface layer may interfere with heat transfer of the heat dissipation substrate. As a result, the thermal conductivity of the heat dissipation substrate decreases and the thermal expansion coefficient increases. On the other hand, if the pressure is less than 100, If the pressure exceeds , deformation may occur in the first metal layer and the second metal layer due to excessive pressure. For this reason, the pressure during bonding is 1 to 100 It is preferable, and more preferably 30 to 60 It could be.

[0133] Additionally, it is preferable to maintain the above bonding temperature and pressure for 100 to 250 minutes. Hereinafter, the time for maintaining the above bonding temperature and pressure is defined as the high-temperature pressurization time.

[0134] If the high-temperature pressurization time is less than 100 minutes, there is not enough time for the nickel (Ni) to diffuse into the first metal layer and the second metal layer, which may reduce the effect of diffusion bonding. On the other hand, if the high-temperature pressurization time exceeds 250 minutes, thermal deformation may occur in the first metal layer and the second metal layer due to excessive heating. This may cause a delamination phenomenon at the interface where the first metal layer and the second metal layer come into contact, which may reduce the thermal conductivity and increase the thermal expansion coefficient. For this reason, the high-temperature pressurization time is preferably 100 to 250 minutes, and more preferably 150 to 200 minutes.

[0135] According to an embodiment, the bonding process is performed inside the chamber. Inland After vacuuming to 10 Torr, nitrogen (N2) can be injected to perform the bonding process in a nitrogen atmosphere. The vacuum level during the bonding process is If the pressure is less than Torr, the heat dissipation substrate may react with oxygen in the chamber and be oxidized. This may reduce the thermal conductivity of the heat dissipation substrate. To prevent this, the present invention provides a method for preventing the heat dissipation substrate from being oxidized inside the chamber. Inland It is preferable to perform the process in a nitrogen atmosphere by injecting nitrogen (N2) after vacuuming to 10 Torr.

[0136] However, the above vacuum level Since the degree of increase in effectiveness is minimal even when exceeding Torr, the above bonding process Inland It is preferable to perform the process in a nitrogen gas atmosphere at a vacuum of 10 Torr.

[0137] In the above specification, the bonding conditions are described with respect to the bonding conditions when the nickel coating layer (170) is included, but the present invention is not limited thereto, and bonding can be performed under the same conditions even when the nickel coating layer (170) is not included.

[0138] According to an embodiment, the formation formed through the high-temperature pressurization can be cut along the direction in which the first metal layer and the second metal layer are laminated, as shown in FIG. 12, to manufacture a thermally conductive layer in the form of a plate.

[0139] For example, as illustrated in FIG. 12, when the first metal layer and the second metal layer are laminated in the Z direction in the above-described formation, the heat-conductive structure can be cut parallel to the XZ plane along the Z direction to manufacture a plate-shaped shielding layer (100a, 100b, 100c, ...). Although not illustrated in the drawing, it is of course possible to manufacture a heat-conductive layer by cutting the heat-conductive structure parallel to the YZ plane through the same process.

[0140] Through this process, a shielding layer (100a, 100b) is manufactured, and as shown in Fig. 13, the shielding layers (100a, 100b) in the form of a plate are laminated with the metal arrangement directions different from each other, and then a partition wall (100) can be formed through diffusion bonding at high temperature and pressure in a similar manner to the method of forming the shielding layers (100a, 100b) above.

[0141] The bulkhead (100) has been described above, and by employing the bulkhead (100), a user of a radar communication device having an electromagnetic wave interference shielding and protection circuit according to an embodiment of the present invention can prevent errors due to electromagnetic wave interaction by forming a bulkhead between elements and shielding electromagnetic wave interference by the bulkhead, and can use a radar communication device having excellent thermal conductivity and preventing delamination at the interface due to thermal expansion by forming the bulkhead by alternately arranging two materials having different thermal conductivities and laminating them in different directions.

[0142] Next, another embodiment of the present invention will be described.

[0143] A radar communication device having an electromagnetic interference shielding and protection circuit according to another embodiment of the present invention is basically the same in that a partition wall (100) is formed between each block, but has a difference in the configuration of the blocks.

[0144] Regarding these other embodiments, as illustrated in FIG. 14, it further includes a signal detection block (900), a second path control block (700), a second resistive termination block (720), a signal connection line (650), and a control unit (not illustrated).

[0145] The signal detection block (900) is connected to the wireless transmission / reception block (400) and detects the intensity of a signal transmitted from the wireless transmission / reception block (400) toward the reception signal processing block (300).

[0146] Here, the signal transmitted toward the reception signal processing block (300) may be a normal signal received through an antenna in a general situation, but may also be a reflected signal or an abnormal signal.

[0147] Here, an abnormal signal refers to an abnormal signal such as a signal with a high voltage momentarily transmitted through an antenna.

[0148] Meanwhile, a reflected signal refers to a signal that is reflected and returned instead of being transmitted to the outside due to misalignment with the antenna, a short circuit between the wireless transceiver block (400) and the antenna, or the antenna not being mounted when transmitting a signal in a radar communication device such as the present invention, and refers to a signal that travels in a receiving direction opposite to the direction of the transmission signal from the wireless transceiver block (400) and returns toward the second path control block (700) from the wireless transceiver block (400).

[0149] The signal detection block (900) detects the intensity of a signal transmitted from the wireless transceiver block (400) toward the second path control block (700), regardless of its type. To this end, the signal detection block (900) may be configured to include, but is not limited to, a coupler, which is an RF passive component that distributes or combines signal power.

[0150] The intensity of the signal detected in the signal detection block (900) is transmitted to the control unit (not shown), and the control unit operates the second path control block (700) and the first path control block (600) based on the intensity of the reflected signal, which will be described later.

[0151] The second path control unit block (700) is electrically connected to the signal detection unit block (900) and operates based on the intensity of the signal detected by the signal detection unit block (900).

[0152] Strictly speaking, as described above, the control unit receives the intensity of the signal detected by the signal detection block (900), and based on this, the second path control block (700) determines which component among the second resistive termination block (720) and the signal connection line (650) to transmit the signal to, thereby operating the second path control block (700).

[0153] The signal connection line (650) and the second resistive termination block (720) are electrically connected to the second path control block (700) so that signals can be transmitted selectively by the operation of the second path control block (700).

[0154] The signal connection line (650) and the second resistive termination block (720) are logically arranged in parallel, and the second path control block (700) is arranged so that the control unit can transmit a signal to either the signal connection line (650) or the second resistive termination block (720).

[0155] Here, when the second path control unit block (700) is operated to transmit a signal to the signal connection line (650), the signal transmitted from the second path control unit block (700) connected to one side of the signal connection line (650) is transmitted to the first path control unit block (600) connected to the other side.

[0156] Meanwhile, when the second path control block (700) is operated to transmit a signal to the second resistive termination block (720), it can perform a function of absorbing and extinguishing the signal transmitted through the second path control block (700), and as an example, the second resistive termination block (720) can be grounded.

[0157] The first path control unit block (600) is connected to the opposite end of the signal connection line (650) to which the second path control unit block (700) is connected, i.e., the other side.

[0158] The first path control block (600) is also operated by the control unit. When a signal is to be transmitted, as shown in FIG. 14, the control unit controls the second path control block (700) so that the signal can be transmitted through the signal connection line (650), and at the same time operates the first path control block (600) so that the transmission signal processing block (200) and the signal connection line (650) can be connected to transmit the signal.

[0159] Meanwhile, when a signal is to be received, as shown in FIG. 15, the control unit controls the second path control block (700) so that the signal can be transmitted through the signal connection line (650), and at the same time, operates the first path control block (600) so that the reception signal processing block (300) and the signal connection line (650) can be connected to transmit the signal.

[0160] Now, based on this configuration, we would like to first explain a first embodiment of an algorithm for protecting a radar communication device having a protection circuit according to the present invention.

[0161] The control unit operates the second path control unit block (700) so that the signal transmitted from the wireless transmission / reception unit block (400) is transmitted to the signal connection line (650) when the intensity of the signal detected by the signal detection unit block (900) described above is within a preset value.

[0162] In other words, if the intensity of the signal detected by the signal detection block (900) is a voltage or current value that does not damage the components, it is determined to be a normal signal, and the second path control block (700) is controlled so that the signal passes through a normal reception signal path.

[0163] Meanwhile, when the intensity of the signal detected by the signal detection block (900) exceeds a preset value, the control unit operates the second path control block (700) so that the signal is transmitted to the second resistive termination block (720), as shown in FIG. 16.

[0164] That is, if the intensity of the signal detected by the signal detection block (900) is a voltage or current value that may damage the elements (if it exceeds a preset value), it is determined to be an abnormal signal or a reflected signal, and the signal is prevented from passing through the receiving signal path, while at the same time, the signal is transmitted to the second resistive termination block (720), thereby absorbing and eliminating the signal with excessive intensity.

[0165] With this algorithm, a radar communication device having a protection circuit according to the present invention can prevent damage to a high-power amplifier, etc. in a receiving signal processing block (300) due to a reflected signal.

[0166] Meanwhile, a second embodiment of an algorithm for protecting a radar communication device having a protection circuit according to the present invention will be described.

[0167] The radar communication device having an electromagnetic interference shielding and protection circuit according to the present invention has, as described above, a first resistive termination block (620) for configuring an additional path that can be selected by the first path control block (600).

[0168] This first resistive termination block (620) is electrically connected to the first path control block (600), as illustrated in FIG. 17, and is logically arranged in parallel with the transmission signal processing block (200) and the reception signal processing block (300).

[0169] The first resistive termination block (620) can perform the function of absorbing and extinguishing a signal transmitted through the first path control block (600), similar to the second resistive termination block (720). As an example, the first resistive termination block (620) can be grounded.

[0170] The signal transmitted through the second path control block (700) and the signal connection line (650) is configured to be transmitted to either the transmission signal processing block (200), the reception signal processing block (300), or the first resistive termination block (620) depending on the operation of the first path control block (600).

[0171] Here, a second embodiment of an algorithm for protecting a radar communication device having a bulkhead according to the present invention is implemented, specifically as follows.

[0172] The control unit operates the first path control unit block (600) so that the signal transmitted from the signal connection line (650) is transmitted to the reception signal processing unit block (300) when the intensity of the signal detected by the signal detection unit block (900) described above is within a preset value.

[0173] In other words, if the intensity of the signal detected by the signal detection block (900) is a voltage or current value that does not damage the components, it is determined to be a normal signal, and the first path control block (600) is controlled so that the signal passes through a normal reception signal path.

[0174] Meanwhile, when the intensity of the signal detected by the signal detection block (900) exceeds a preset value, the control unit operates the first path control block (600) so that the signal is transmitted to the first resistive termination block (620), as shown in FIG. 17.

[0175] That is, if the intensity of the signal detected by the signal detection block (900) is a voltage or current value that may damage the elements (if it exceeds a preset value), it is determined to be an abnormal signal or a reflected signal, and the signal is prevented from passing through the receiving signal path, while at the same time, the signal is transmitted to the first resistive termination block (620), thereby absorbing and eliminating the signal with excessive intensity.

[0176] With this algorithm, a radar communication device having a protection circuit according to the present invention can prevent damage to a high-power amplifier, etc. in a receiving signal processing block (300) due to a reflected signal.

[0177] Here, in terms of the effect of this configuration, as discussed in the first embodiment above, damage caused by reflected signals can be prevented to some extent by the configuration of the second path control block (700) and the second resistive termination block (720).

[0178] However, a high intensity signal may be transmitted to the signal connection line (650) for a very short time due to an operation delay or breakdown of the second path control block (700), and in such a case, the components in the transmission signal processing block (200) may be damaged, so a double protection circuit is configured.

[0179] Therefore, for example, if the shielding rate of a signal or a reflected signal exceeding a preset value in intensity by the second path control block (700) and the second resistive termination block (720) is 90%, and the shielding rate of a signal or a reflected signal exceeding a preset value in intensity by the first path control block (600) and the first resistive termination block (620) is 90%, then in the first embodiment, the probability of damage to the transmission signal processing block (200) due to a reflected signal or the like is 10%, but in the second embodiment, since it is configured in two, the probability of damage to the transmission signal processing block (200) due to a reflected signal or the like is 0.1 * 0.1 = 0.01, which is 1%, so it can be said that there is virtually no possibility of damage to the reception signal processing block (300) due to a reflected signal.

[0180] Here, a partition wall (100), which is a structure for protecting the core chip block (500) from electromagnetic interference, is formed, and the circuit of the core chip block (500) can be protected based on the intensity of the signal detected by the third path control block (800) connected between the core chip block (500) and all blocks.

[0181] In addition, the third resistive termination block (820) may be electrically connected to the third path control block (800), but may be arranged logically in parallel with each other so that signals can be transmitted by the operation of the third path control block (800), so that signals can be transmitted alternatively.

[0182] Accordingly, although the probability of damage to the transmission signal processing block (200) of the first path control block (600) and the second path control block (700) was a significantly low figure of 1%, the probability of damage to the core chip block (500) applied up to the third path control block (800) can be reduced even more significantly to 0.1%.

[0183] Next, a radar communication device having a protection circuit according to the present invention may further include a branch point (J) and a switch protection block (920) in addition to the above configuration.

[0184] A branch point (J) is formed between the second path control block (700) and the signal detection block (900), and serves to electrically branch a signal. This branch point (J) may not be a physical element, and may include a contact formed to separate a signal on the path along which the signal is transmitted.

[0185] The switch protection block (920) is arranged so that a signal separated from the branch point (J) can be transmitted, as illustrated in FIG. 18, and for this purpose, it is arranged logically in parallel with the second path control block (700).

[0186] Accordingly, the signal transmitted from the wireless transmitter / receiver block (400) to the signal detection block (900) is branched at the branch point (J), and some of the signal is transmitted to the second path control block (700) and the remainder is transmitted to the switch protection block (920).

[0187] The switch protection block (920) is provided to protect the second path control block (700), and when the path of the reflected signal is taken into consideration, since the first path control block (600) is located serially at the rear end of the second path control block (700), if the second path control block (700) is protected, the first path control block (600) can naturally also be protected.

[0188] Before explaining the configuration of this switch protection block (920), the characteristics of the second path control block (700) and the first path control block (600) used in the radar communication device having the protection circuit according to the present invention will first be explained.

[0189] RF switches such as the first path control block (600) and the second path control block (700) used in a wireless transmission / reception radar communication device such as the present invention are elements commonly used in communication modules, and perform the role of passing RF signals or bypassing RF signals to ground (the first resistive termination in the present invention).

[0190] RF switches are also used to change the operating frequency of the antenna. RF switches are connected between the antenna and the impedance element, and also switch the connection of the impedance element to the antenna.

[0191] These RF switches require high voltage withstand characteristics, allowing them to withstand high RF signal power. When the RF switch is off, high voltages are applied, which can disrupt RF linearity and cause physical damage.

[0192] Since the voltage that a switch in the off state can withstand is limited, it is important to prevent breakdown of the RF switch. In general, to prevent breakdown of the RF switch, a method of connecting multiple transistors in series is often used for RF switches.

[0193] When multiple transistors are used in series to form an RF switch, the voltage distributed to each transistor is lowered, which prevents breakdown of the RF switch.

[0194] However, since the breakdown of the RF switch occurs when the voltage is distributed high only to a specific stage among the transistors of several stages, a method of connecting more transistors in series is used to solve this problem, but this method has the problem of connecting too many transistors in series and worsening the characteristics of the switch in the on state.

[0195] Meanwhile, to compensate for this, a method of increasing the total width of the transistor is also used, but there is a problem that the size of the integrated circuit becomes excessively large.

[0196] Therefore, in the present invention, a signal is branched through a branch point (J), and the second path control block (700) and the switch protection block (920) are logically arranged in parallel.

[0197] Therefore, when a signal of an intensity exceeding a preset value is transmitted, i.e., a high voltage is applied, the second path control block (700) is protected by preventing the high intensity signal from being transmitted entirely to the second path control block (700) by branching at the branch point (J).

[0198] Meanwhile, in the case of a normal signal, that is, a signal transmitted with a strength within a preset value, as will be described later, the impedance fluctuation unit (923) and the voltage limiter (925) are employed to prevent the signal from being transmitted to the switch protection block (920), thereby preventing the signal reception efficiency from being reduced.

[0199] Below, the configuration of this switch protection block (920) is described in detail.

[0200] The switch protection block (920) includes a corresponding voltage generation unit (921), a buffer (922), an impedance variation unit (923), an impedance element (924), as illustrated in FIG. 19, and may further include a voltage limiter (925).

[0201] The response voltage generation unit (921) receives information on the intensity of the signal detected by the signal detection unit block (900) and generates a response voltage corresponding to the intensity of the input signal.

[0202] The corresponding voltage generation unit (921) outputs the generated corresponding voltage to the buffer (922), and the buffer (922) drives the impedance variation unit (923) according to the corresponding voltage.

[0203] The impedance variation unit (923) varies the internal impedance value according to the output of the buffer (922). Logically, the impedance variation unit (923) can be viewed as providing an impedance value that varies according to the corresponding voltage.

[0204] In detail, the impedance variation unit (923) lowers the internal impedance value when the corresponding voltage increases (i.e., rises). Therefore, according to the current distribution law, a high current signal (a signal having a strength exceeding a preset value) mostly flows to the switch protection block (920) with low impedance, thereby protecting the second path control block (700).

[0205] Meanwhile, the impedance fluctuation unit (923) increases the internal impedance value when the corresponding voltage decreases (i.e., drops). Therefore, according to the current distribution law, normal signals (signals with an intensity within a preset value) rarely flow to the switch protection block (920) with high impedance, and most of them are transmitted to the second path control block (700), thereby preventing the reception efficiency of the signal from deteriorating when it is a normal signal.

[0206] The impedance variation unit (923) includes at least one transistor (T1 to Tn) that is connected in series with each other, as illustrated in FIG. 20. Here, in FIG. 20, the transistor is expressed as including a plurality of transistors, but is not limited thereto, and may be configured to include only at least one transistor.

[0207] A plurality of transistors (T1 to Tn) each receive the output of the buffer (922) through a gate resistor (Rg). In addition, the drain of the transistor (T1) is connected to the branch point (J), the drain of the transistor (T2) is connected to the source of the transistor (T1), and by the same logic, the drain of each transistor (Tn) can be connected to the source of the transistor (Tn-1). Meanwhile, the source of the transistor (Tn) is connected to the impedance element (924).

[0208] Each of these transistors (T1 to Tn) may be a FET (Field Effect Transistor), MOSFET (Metal Oxide Semiconductor Field Effect Transistor), or BJT (Bipolar Junction Transistor), but is not limited thereto and any element that produces the same effect may be applied without limitation.

[0209] An impedance element (924) is provided between the impedance variable part (923) and the ground. That is, the impedance element (924) is connected between the source of the transistor (Tn) and the ground.

[0210] The impedance element (924) includes at least one of a resistor, a capacitor, and an inductor, and provides a predetermined impedance value depending on the frequency of the RF signal.

[0211] Meanwhile, the switch protection block (920) may further include a voltage limiter (925) connected between the branch point (J) and the impedance fluctuation section (923), as illustrated in FIG. 20.

[0212] The voltage limiter (925) may be implemented using at least one diode. Alternatively, the voltage limiter (925) may include multiple diodes connected in series, as illustrated in FIG. 21 . Although FIG. 21 illustrates the configuration using multiple diodes, it is apparent that the configuration is not limited thereto and may be implemented using a single diode.

[0213] Meanwhile, since the RF signal is an alternating current, the voltage limiter (925) may include a first diode (926) and a second diode (927) connected back-to-back, as illustrated in FIG. 22.

[0214] The first diode (926) may include a plurality of diodes connected in series with each other, and the second diode (927) may include a plurality of diodes connected in series with each other and in the opposite direction to the first diode (926).

[0215] That is, the first diode (926) and the second diode (927) can be connected back-to-back. Accordingly, when the RF signal is a positive (+) value, the first diode (926) can operate as a voltage limiter, and when the RF signal is a negative (-) value, the second diode (927) can operate as a voltage limiter.

[0216] Meanwhile, although the first diode (926) and the second diode (927) are depicted as including multiple diodes in FIGS. 21 and 22, they can be implemented with only one diode.

[0217] By connecting this voltage limiter (925) between the branch point (J) and the impedance fluctuation section (923), the efficiency of the switch protection block (920) according to the present invention can be increased.

[0218] To explain this, the voltage limiter (925) is turned on when a threshold voltage or higher is applied to both ends due to its characteristics, and a predetermined limiter voltage is applied to both ends.

[0219] That is, the voltage limiter (925) has a low impedance value above the threshold voltage. Meanwhile, by the same principle, the voltage limiter (925) is turned off and has a high impedance value below the threshold voltage.

[0220] When this is applied to the operation of the switch protection block (920) according to the present invention, when a signal with an intensity exceeding a preset value is transmitted, the voltage limiter (925) is turned on, so that the voltage limiter (925) has a low impedance value, and therefore, according to the current distribution law, the high current signal (the signal with an intensity exceeding the preset value) mostly flows to the switch protection block (920) with low impedance, thereby protecting the second path control block (700).

[0221] Meanwhile, when a signal with an intensity within a preset value is transmitted, the voltage limiter (940) is turned off, so that the voltage limiter (925) has a high impedance value. Therefore, according to the current distribution law, a normal signal (a signal with an intensity within a preset value) hardly flows toward the switch protection block (920) with a high impedance value, and most of it is transmitted to the second path control block (700), so that the reception efficiency of the signal can be prevented from being lowered when it is a normal signal.

[0222] The embodiments of the present invention have been described above, and due to the above configuration, a radar communication device having an electromagnetic wave interference shielding and protection circuit according to the present invention can prevent errors due to electromagnetic wave interaction by forming a partition between elements and shielding electromagnetic waves by the partition.

[0223] In addition, according to the present invention, the bulkhead is formed by alternately arranging two materials having different thermal conductivities and laminating them in different directions, thereby improving thermal conductivity and preventing delamination at the interface due to thermal expansion.

[0224] In addition, the internal configuration including the transmission signal processing block (200), the reception signal processing block (300), and the core chip block (500) can be protected from electromagnetic interference, and damage caused by reflected signals, etc. can be prevented by the first path control block (600), the second path control block (700), and the third path control block (800).

[0225] The radar communication device having an electromagnetic interference shielding and protection circuit according to an embodiment of the present invention has been described above, and although the detailed description of the present invention described above has been described with reference to preferred embodiments of the present invention, it will be understood by those skilled in the art or having ordinary knowledge in the art that various modifications and changes can be made to the present invention without departing from the spirit and technical scope of the present invention as described in the claims of the present invention.

[0226]

[0227] [Explanation of symbols]

[0228] 100: Bulkhead

[0229] 200: Transmission signal processing block

[0230] 300: Receiver signal processing block

[0231] 400: Wireless Transmitter / Receiver Block

[0232] 500: Core chip block

[0233] 600: 1st path control block

[0234] 700: Second path control block

[0235] 800: Third path control block

[0236] 620: First resistive termination block

[0237] 720: Second resistive termination block

[0238] 820: Third resistive termination block

[0239] 650: Signal connection line

[0240] 900: Signal detection block

[0241] 920: Switch protection block

Claims

1. Transmission signal processing block that processes the transmission signal; A receiving signal processing block arranged in parallel with the above transmitting signal processing block and processing a receiving signal; A wireless transceiver block that transmits or receives wireless transmission signals through an antenna; A first path control block arranged between the transmission signal processing block, the reception signal processing block, and the wireless transmission / reception block, and controlling the transmission path of the signal so that the signal transmitted / received through the wireless transmission / reception block is transmitted / received to either the transmission signal processing block or the reception signal processing block; and It includes a core chip block having a central processing unit that is connected to the above-mentioned transmission signal processing block, reception signal processing block, and first path control block, and stores and calculates signal information and outputs it. A radar communication device having an electromagnetic interference shielding and protection circuit, characterized in that a partition wall is formed at the boundary between the transmitting signal processing block, the receiving signal processing block, the first path control block, the wireless transmitting / receiving block, and the core chip block.

2. In claim 1, A radar communication device having an electromagnetic interference shielding and protection circuit, characterized in that the core chip block is laminated on a bulkhead that shields all of the blocks.

3. In claim 1, A radar communication device having an electromagnetic interference shielding and protection circuit, characterized in that the bulkhead comprises at least one metal selected from among iron, cobalt, nickel, aluminum, and copper.

4. In claim 1, The above bulkhead is composed of multiple shielding layers, A radar communication device having an electromagnetic interference shielding and protection circuit, characterized in that at least one shielding layer is formed by alternately arranging different first and second metals.

5. In claim 4, A radar communication device having an electromagnetic interference shielding and protection circuit, characterized in that, among the plurality of shielding layers, the arrangement direction of the first metal and the second metal of one shielding layer is different from the arrangement direction of the first metal and the second metal of another shielding layer.

6. In claim 5, A radar communication device having an electromagnetic interference shielding and protection circuit, characterized in that the first metal is copper (Cu) or a copper alloy, and the second metal is a metal or an alloy thereof having a smaller thermal expansion coefficient than the copper.

7. In claim 6, A radar communication device having an electromagnetic interference shielding and protection circuit, characterized in that the second metal comprises any one selected from molybdenum (Mo), a molybdenum (Mo) alloy, tungsten (W), a tungsten (W) alloy, Kovar, Invar, and Alloy 42.

8. In claim 7, A radar communication device having an electromagnetic interference shielding and protection circuit, characterized in that the first metal and the second metal are diffusion bonded.

9. In claim 8, A radar communication device having an electromagnetic interference shielding and protection circuit, characterized in that a nickel diffusion layer is further formed in an adjacent area where the diffusion bonding is performed.

10. In claim 4, A radar communication device having the above electromagnetic interference shielding and protection circuit, A signal detection block connected to the above wireless transceiver block and detecting the strength of a signal transmitted from the wireless transceiver block toward the reception signal processing block; A second path control block connected to the signal detection block and operated based on the intensity of a signal detected by the signal detection block; A second resistive termination block and signal connection line electrically connected to the second path control block so that a signal can be transmitted by the operation of the second path control block, but arranged logically in parallel with each other so that a signal can be transmitted alternatively; and It includes a control unit that controls the second path control unit block based on the intensity of the signal detected by the signal detection unit block; The above control unit, A radar communication device having an electromagnetic interference shielding and protection circuit, characterized in that when the intensity of a signal detected by the signal detection block is within a preset value, the second path control block is operated so that a signal is transmitted to the signal connection line, and when the intensity of a signal detected by the signal detection block exceeds the preset value, the second path control block is operated so that a signal is transmitted to the second resistive termination block.

11. In claim 10, A radar communication device having the above electromagnetic interference shielding and protection circuit, An electrical branch point is formed between the second path control block and the signal detection block, and a switch protection block is further included that is arranged in parallel with the second path control block so that a signal can be separated and transmitted at the branch point. A radar communication device having an electromagnetic interference shielding and protection circuit, characterized in that a signal transmitted from the signal detection block to the second path control block is branched at the branch point and input to the switch protection block, and the switch protection block provides an impedance value that varies according to the intensity of the input signal, thereby controlling the intensity of the signal transmitted to the second path control block.

12. In claim 10, A radar communication device having the above electromagnetic interference shielding and protection circuit, It further includes a first resistive termination block that is arranged logically in parallel with the above-mentioned transmission signal processing block and reception signal processing block and can be electrically connected to the signal connection line by the first path control block, The above control unit, A radar communication device having an electromagnetic interference shielding and protection circuit, characterized in that when the intensity of a signal detected by the signal detection block is within a preset value, the first path control block is operated so that the signal is transmitted to the reception signal processing block, and when the intensity of a signal detected by the signal detection block exceeds the preset value, the first path control block is operated so that the signal is transmitted to the first resistive termination block.

13. In claim 4, A radar communication device having the above electromagnetic interference shielding and protection circuit, A third path control block that operates based on the intensity of the detected signal among all blocks connected to the above core chip block; and A third resistive termination block electrically connected to the third path control block so that a signal can be transmitted by the operation of the third path control block, but arranged logically in parallel with each other so that a signal can be transmitted alternatively; A radar communication device having an electromagnetic interference shielding and protection circuit including:

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