Semiconductor package, semiconductor device, and method for manufacturing semiconductor package

Abstract

This semiconductor package, to which a sensor chip is connected via a wire, suppresses image quality deterioration.　The semiconductor package is provided with a substrate, a semiconductor chip, and a transparent material. Among the substrate, the semiconductor chip, and the transparent material in the semiconductor package, the semiconductor chip is connected to the substrate via a wire. Additionally, in the semiconductor package provided with the substrate, semiconductor chip, and transparent material, the transparent material, among the substrate, the semiconductor chip, and the transparent material, is adhered to the surface of the substrate on the light receiving side thereof.

Description

Semiconductor package, semiconductor device, and method for manufacturing semiconductor package

[0001] The present technology relates to a semiconductor package, and more particularly to a semiconductor package in which wire bonding is performed, a semiconductor device, and a method for manufacturing the semiconductor package.

[0002] Conventionally, in imaging devices and the like, a cover glass has been used to protect the light receiving surface of a sensor chip from foreign matter, moisture, etc. For example, a semiconductor package has been proposed in which the side of a cavity, which is an air layer between the effective pixel area of ​​the sensor chip and the cover glass, is sealed with a retaining part, and the bonding wires outside the retaining part are sealed with a sealing resin (see, for example, Patent Document 1).

[0003] JP 2009-171065 A

[0004] The above-mentioned conventional technology aims to reduce the height of the semiconductor package by not placing bonding wires inside the cavity. However, the above-mentioned semiconductor package generates internal pressure, especially in high-temperature environments, which can cause deformation of the sensor chip. Furthermore, when cooling from a high-temperature environment to room temperature or a low-temperature environment, moisture present in the cavity can cause fogging and condensation. Furthermore, foreign matter is present in the cavity, although on the order of ppm (parts per million). These deformations of the sensor chip, fogging, condensation, and foreign matter can degrade the image quality of image data.

[0005] This technology was developed in light of these circumstances, and aims to prevent degradation of image quality in semiconductor packages where sensor chips are connected by wires.

[0006] The present technology has been made to solve the above-mentioned problems, and a first aspect thereof is a semiconductor package including a substrate, a semiconductor chip connected to the substrate by wires, and a transparent material attached to a light-receiving surface of the semiconductor chip, and a manufacturing method thereof, which has the effect of suppressing degradation of image quality.

[0007] In addition, in the first aspect, a frame may be further provided, the semiconductor chip may be disposed in a region surrounded by the frame as viewed from the optical axis direction, and the transparent material may be attached to the light-receiving surfaces of the substrate and the semiconductor chip, the side surfaces of the semiconductor chip, and the inner wall of the frame, thereby achieving a cavityless structure by filling the cavity surrounded by the frame with the transparent material.

[0008] In this first aspect, the inner diameter of the frame may become smaller as it becomes farther away from the substrate, thereby suppressing adverse effects of light reflected by wires or the like.

[0009] In the first aspect, the light receiving surface of the transparent material may be flat, which eliminates the need for a cover glass.

[0010] In the first aspect, the light receiving surface of the transparent material may be concave, thereby providing the transparent material with the function of a convex lens.

[0011] In the first aspect, the light receiving surface of the transparent material may have a convex shape, thereby providing the transparent material with the function of a concave lens.

[0012] In the first aspect, the transparent material may include a plurality of layers having different refractive indices, thereby providing the effect of allowing the optical characteristics to be designed as desired.

[0013] Furthermore, the first side surface may further include a light-shielding film that covers a region near the periphery of the light-receiving surface of the transparent material and the side surface of the transparent material, thereby eliminating the need for a frame.

[0014] In addition, in the first aspect, a resin layer may be further provided between the transparent material and the substrate, thereby improving heat dissipation capability.

[0015] Furthermore, the first side surface may further include a molding resin that seals the light-receiving surface of the substrate, the side surface of the semiconductor chip, and the wires, thereby providing the effect of suppressing flare.

[0016] In addition, in the first aspect, a resin film having a moth-eye structure may be further provided to cover the light receiving surface of the transparent material, thereby suppressing reflection on the light receiving surface of the transparent material.

[0017] In addition, in this first aspect, a first anti-reflection film may be further provided to cover the light-receiving surface of the transparent material, thereby suppressing reflection on the light-receiving surface of the transparent material.

[0018] In addition, in the first aspect, a light-shielding resin that seals the wire may be further provided, thereby providing the effect of suppressing flare.

[0019] In addition, in the first aspect, an opening may be formed in the substrate, and the semiconductor chip may be disposed in the opening, thereby improving heat dissipation capability.

[0020] In addition, in the first aspect, a second anti-reflection film that covers the wire may be further provided, thereby providing the effect of suppressing flare.

[0021] A second aspect of the present technology is a semiconductor device including a substrate, a semiconductor chip connected to the substrate by a wire, a transparent material attached to a light-receiving surface of the semiconductor chip, and a signal processing circuit that processes data from the semiconductor chip, thereby suppressing degradation of image quality in the semiconductor device.

[0022] FIG. 1 is a block diagram showing an example of a configuration of a semiconductor device according to a first embodiment of the present technology. FIG. 2 is an example of a cross-sectional view of a semiconductor package according to the first embodiment of the present technology. FIG. 3 is an example of a cross-sectional view of a semiconductor package in a comparative example. FIG. 4 is a diagram for explaining a method for manufacturing a semiconductor package according to the first embodiment of the present technology. FIG. 5 is a flowchart showing an example of a method for manufacturing a semiconductor package according to the first embodiment of the present technology. FIG. 6 is a diagram for explaining manufacturing processes up to sealing of cavities in a modified example of the first embodiment of the present technology. FIG. 7 is a diagram for explaining a manufacturing process of singulation in a modified example of the first embodiment of the present technology. FIG. 8 is a flowchart showing an example of a manufacturing method of a semiconductor package according to a modified example of the first embodiment of the present technology. FIG. 9 is an example of a cross-sectional view of a semiconductor package according to a second embodiment of the present technology. FIG. 10 is an example of a cross-sectional view of a semiconductor package according to a third embodiment of the present technology. FIG. 11 is an example of a cross-sectional view of a semiconductor package according to a fourth embodiment of the present technology. FIG. 12 is an example of a cross-sectional view of a semiconductor package according to a fifth embodiment of the present technology. FIG. 13 is a diagram for explaining manufacturing processes up to formation of slits in a fifth embodiment of the present technology. FIG. 14 is a diagram for explaining manufacturing processes up to singulation in a fifth embodiment of the present technology. FIG. 10 is an example of a cross-sectional view of a semiconductor package in which the shape of the upper surface of the transparent material is convex according to a fifth embodiment of the present technology. FIG. 11 is an example of a cross-sectional view of a semiconductor package in which the shape of the upper surface of the transparent material is concave according to the fifth embodiment of the present technology. FIG. 12 is an example of a cross-sectional view of a semiconductor package in a sixth embodiment of the present technology. FIG. 13 is a diagram for explaining a manufacturing process up to the formation of a resin layer in the sixth embodiment of the present technology. FIG. 14 is a diagram for explaining a manufacturing process up to singulation in the sixth embodiment of the present technology. FIG. 15 is a diagram for explaining an example of a simulation result in the sixth embodiment of the present technology. FIG. 16 is a diagram for explaining an example of a configuration in which another embodiment is applied to the sixth embodiment of the present technology. FIG. 17 is an example of a cross-sectional view of a semiconductor package in a seventh embodiment of the present technology.10. A diagram for explaining a manufacturing process up to sealing of a cavity in a seventh embodiment of the present technology. A diagram for explaining a manufacturing process of singulation in the seventh embodiment of the present technology. A diagram showing an example of a configuration in which another embodiment is applied to the seventh embodiment of the present technology. An example of a cross-sectional view of a semiconductor package in an eighth embodiment of the present technology. A diagram for explaining a manufacturing process up to removal of a mold in the eighth embodiment of the present technology. A diagram for explaining a manufacturing process up to singulation in the eighth embodiment of the present technology. An example of a cross-sectional view of a semiconductor package in a case in which an upper surface of a transparent film in the eighth embodiment of the present technology is covered with an anti-reflection film. An example of a cross-sectional view of a semiconductor package in a ninth embodiment of the present technology. An example of a cross-sectional view of a semiconductor package in a tenth embodiment of the present technology. A diagram for explaining a manufacturing process up to sealing of a cavity in the tenth embodiment of the present technology. A diagram for explaining a manufacturing process up to mounting of solder balls in the tenth embodiment of the present technology. An example of a cross-sectional view of a semiconductor package in which a frame is formed by a molding method in the tenth embodiment of the present technology. A diagram showing an example of a configuration in which the first and second embodiments are applied to the tenth embodiment of the present technology. 13 is a diagram showing an example of a configuration in which the moth-eye structure of the eighth embodiment and the first and second embodiments are applied to the tenth embodiment of the present technology. FIG. 14 is a diagram showing another example of a configuration in which the anti-reflection film of the eighth embodiment and the first and second embodiments are applied to the tenth embodiment of the present technology. FIG. 15 is an example of a cross-sectional view and a top view of a semiconductor package in a modified example of the tenth embodiment of the present technology. FIG. 16 is another example of a top view of a semiconductor package in a modified example of the tenth embodiment of the present technology. FIG. 17 is a diagram for explaining a manufacturing process up to mounting a mold in a modified example of the tenth embodiment of the present technology. FIG. 18 is a diagram for explaining a manufacturing process up to forming a light-shielding film in a modified example of the tenth embodiment of the present technology. FIG. 19 is a diagram for explaining a manufacturing process of singulation in a modified example of the tenth embodiment of the present technology. FIG. 20 is an example of a cross-sectional view of a semiconductor package in an eleventh embodiment of the present technology. FIG. 21 is an example of a cross-sectional view of a semiconductor package in a twelfth embodiment of the present technology.FIG. 16 is a diagram showing an example of a configuration in which the first, second, and fifth embodiments are applied to a twelfth embodiment of the present technology. FIG. 17 is a diagram showing an example of a configuration in which the moth-eye structure of the eighth embodiment and the first and second embodiments are applied to a twelfth embodiment of the present technology. FIG. 18 is a diagram showing another example of a configuration in which the anti-reflection film of the eighth embodiment and the first and second embodiments are applied to a twelfth embodiment of the present technology. FIG. 19 is a block diagram showing an example of a schematic configuration of a vehicle control system. FIG. 20 is an explanatory diagram showing an example of installation positions of an outside-vehicle information detection unit and an imaging unit.

[0023] Modes for carrying out the present technology (hereinafter referred to as embodiments) will be described below. The descriptions will be made in the following order: 1. First embodiment (an example in which a cavity is filled with a transparent material) 2. Second embodiment (an example in which a cavity is filled with a transparent material in the shape of a convex lens) 3. Third embodiment (an example in which a cavity is filled with a transparent material in the shape of a concave lens) 4. Fourth embodiment (an example in which a cavity is filled with a transparent material including multiple layers with different refractive indices) 5. Fifth embodiment (an example in which a cavity is filled with a transparent material and covered with a light-shielding film) 6. Sixth embodiment (an example in which a cavity is filled with a transparent material and a resin layer is disposed below the transparent material) 7. Seventh embodiment (an example in which a cavity is filled with a transparent material and a wire is sealed with a mold resin) 8. Eighth embodiment (an example in which a cavity is filled with a transparent material and its light-receiving surface is covered with a resin film having a moth-eye structure) 9. 9. Ninth embodiment (an example in which a cavity is filled with a transparent material and a wire is sealed with a light-shielding resin) 10. Tenth embodiment (an example in which a cavity is filled with a transparent material and a wire is sealed with a light-shielding resin, and a sensor chip is disposed in an opening in a substrate) 11. Eleventh embodiment (an example in which a cavity is filled with a transparent material and a wire is coated with an anti-reflection film) 12. Twelfth embodiment (an example in which a cavity is filled with a transparent material and a wire is coated with an anti-reflection film, and a sensor chip is disposed in an opening in a substrate) 13. Application to a moving body

[0024] 1 is a block diagram showing a configuration example of a semiconductor device 100 according to a first embodiment of the present technology. The semiconductor device 100 is a device for capturing image data, and includes an optical unit 110, a sensor chip 230, and a DSP (Digital Signal Processing) circuit 120. The semiconductor device 100 further includes a display unit 130, an operation unit 140, a bus 150, a frame memory 160, a storage unit 170, and a power supply unit 180. The semiconductor device 100 is expected to be a camera mounted on a smartphone, an in-vehicle camera, or the like.

[0025] The optical unit 110 collects incident light and guides it to the sensor chip 230. The sensor chip 230 has the function of a solid-state image sensor and generates image data by photoelectric conversion. The sensor chip 230 supplies the generated image data to the DSP circuit 120 via a signal line 239.

[0026] The DSP circuit 120 performs predetermined signal processing on image data and outputs the processed image data to a frame memory 160 or the like via a bus 150. The DSP circuit 120 is an example of a signal processing circuit as defined in the claims.

[0027] The display unit 130 displays image data. For example, a liquid crystal panel or an organic EL (Electro Luminescence) panel is assumed as the display unit 130. The operation unit 140 generates an operation signal in accordance with a user's operation.

[0028] The bus 150 is a common path for the sensor chip 230, DSP circuit 120, display unit 130, operation unit 140, frame memory 160, storage unit 170, and power supply unit 180 to exchange data with one another.

[0029] The frame memory 160 holds image data. The storage unit 170 stores various data such as image data. The power supply unit 180 supplies power to the sensor chip 230, the DSP circuit 120, the display unit 130, etc.

[0030] In the semiconductor device 100 having the configuration illustrated in the figure, the sensor chip 230 is disposed in a semiconductor package, which will be described later.

[0031] 2 is an example of a cross-sectional view of a semiconductor package 200 according to the first embodiment of the present technology. The semiconductor package 200 includes a frame 210, a transparent material 220, a sensor chip 230, and a substrate 240.

[0032] Hereinafter, the axis perpendicular to the substrate plane of the substrate 240 (in other words, the optical axis) will be referred to as the Z axis, and a predetermined axis parallel to the substrate plane will be referred to as the X axis. The axis perpendicular to the X axis and Z axis will be referred to as the Y axis. This figure shows a cross section as seen from the Y axis direction. The light receiving side will be referred to as the upper side.

[0033] The lower surface of the sensor chip 230 is bonded to the upper surface (i.e., the light-receiving surface) of the substrate 240. The sensor chip 230 is electrically connected to the substrate 240 by wires 250. Gold wires or the like are used as the wires 250. For example, a CIS (CMOS Image Sensor) is used as the sensor chip 230. The sensor chip 230 is an example of a semiconductor chip as defined in the claims.

[0034] Furthermore, a frame 210 is provided on the upper surface of the substrate 240. When viewed from the Z-axis (optical axis) direction, the sensor chip 230 is disposed in an area surrounded by the frame 210. Furthermore, it is preferable that the inner diameter of the frame 210 becomes smaller the further away from the substrate 240 (in other words, the cross-sectional shape of the frame 210 is tapered). This tapered shape can suppress adverse effects (such as flare) caused by light reflected by the wire 250 or the like.

[0035] The transparent material 220 is a material that has a low refractive index and is transparent, and may be, for example, a transparent resin or liquid glass. When liquid glass is used, for example, liquid glass having a hardness of 4H is used.

[0036] Furthermore, the transparent material 220 fills the space surrounded by the upper surfaces of the substrate 240 and the sensor chip 230 and the inner wall of the frame 210. As a result, the transparent material 220 adheres to the upper surfaces (in other words, the light-receiving surfaces) of the substrate 240 and the sensor chip 230, the side surfaces of the sensor chip 230, and the inner wall of the frame 210. Furthermore, the upper surface of the transparent material 220 is flat.

[0037] Here, as a comparative example, a semiconductor package is assumed in which the space surrounded by the upper surfaces of the substrate 240 and the sensor chip 230 and the inner wall of the frame 210 is sealed with a cover glass.

[0038] 3 is an example of a cross-sectional view of a semiconductor package in a comparative example. In this comparative example, a space surrounded by the upper surfaces of the substrate 240 and the sensor chip 230 and the inner wall of the frame 210 is sealed with a cover glass 225. This space is filled with air, and this air layer is called a "cavity."

[0039] In the comparative example, it is necessary to provide a cover glass 225 above the cavity, which imposes restrictions on thickness and the like.

[0040] Furthermore, the presence of the cavity can cause internal pressure due to internal expansion of air, particularly in high-temperature environments, which can deform the sensor chip 230. Furthermore, when cooling from a high-temperature environment to room temperature or a low-temperature environment, moisture present in the cavity can cause fogging and condensation. In the figure, a watermark 502 is formed on the underside of the cover glass 225 due to fogging and condensation. Furthermore, foreign matter is present in the cavity, although on the order of ppm (parts per million). In the figure, dust 501 is present as the foreign matter. In the comparative example, the deformation of the sensor chip 230, the fogging, condensation, and foreign matter can degrade the image quality of captured image data.

[0041] 2, the space surrounded by the upper surfaces of the substrate 240 and the sensor chip 230 and the inner wall of the frame 210 is filled with the transparent material 220, so that no air layer (in other words, no cavity) exists. This cavity-less structure eliminates the need to provide a cover glass 225 above the cavity, and therefore the semiconductor package 200 can be made thinner than the comparative example.

[0042] Furthermore, the cavity-less structure eliminates internal air expansion, which can suppress deformation of the sensor chip 230 due to internal pressure. It also prevents fogging and condensation, and prevents the intrusion of foreign matter. This makes it possible to suppress image quality degradation due to deformation of the sensor chip 230, fogging, condensation, and foreign matter.

[0043] [Method of Manufacturing Semiconductor Package] Fig. 4 is a diagram for explaining a method of manufacturing a semiconductor package according to the first embodiment of the present technology. First, as illustrated in Fig. 4A, the lower surface of the sensor chip 230 is bonded to the upper surface of the substrate 240. That is, die bonding is performed. Note that a singulated substrate that has been singulated in advance is used as the substrate 240.

[0044] Next, as shown in FIG. 1B, the sensor chip 230 is electrically connected to the substrate 240 by wires 250. That is, wire bonding is performed. Next, as shown in FIG. 1C, the frame 210 is mounted on the upper surface of the substrate 240.

[0045] Next, as shown in d in the figure, a cavity surrounded by the mold 300 and the upper surfaces of the substrate 240 and the sensor chip 230 is filled with the transparent material 220 by a compression molding method to seal the cavity. Next, as shown in e in the figure, the mold 300 is removed, and various post-processing steps are performed as necessary, after which the manufacturing process for the semiconductor package 200 is completed.

[0046] 5 is a flowchart showing an example of a manufacturing method of the semiconductor package 200 according to the first embodiment of the present technology. First, the sensor chip 230 is die-bonded to the substrate 240 (step S901), followed by wire bonding (step S902). Next, the frame 210 is mounted (step S903). Next, a transparent material 220 is filled into the cavity by a compression molding method, and the cavity is sealed (step S904). Next, the mold 300 is removed (step S905), and various post-processing steps are performed as necessary, after which the manufacturing process of the semiconductor package 200 is completed.

[0047] As described above, according to the first embodiment of the present technology, the cavity is filled with the transparent material 220, so that it is possible to suppress the deterioration of image quality due to deformation of the sensor chip 230, fogging, condensation, and foreign matter.

[0048] [Modification] In the first embodiment described above, the frame 210 is mounted after die bonding and wire bonding, but this manufacturing method is not limited to this. The manufacturing method in this modification of the first embodiment differs from the first embodiment in that die bonding and wire bonding are performed after molding the frame 210.

[0049] A manufacturing method according to a modified example of the first embodiment will be described with reference to FIGS.

[0050] 6A, first, a frame 210 is formed by molding on the upper surface of a substrate 240. In a modification of the first embodiment, a sheet substrate including a plurality of singulated substrates is used as the substrate 240.

[0051] Next, die bonding is performed as shown in FIG. 1B, and wire bonding is performed as shown in FIG. 1C. Next, the cavity is sealed with a transparent material 220 by a molding method as shown in FIG. 1D.

[0052] 7A, the substrate 240 is divided into individual pieces, and the individual pieces are obtained as shown in FIG. 7B. After various post-processing steps are performed as necessary, the manufacturing process for the semiconductor package 200 is completed.

[0053] 8 is a flowchart showing an example of a manufacturing method of the semiconductor package 200 according to the modified example of the first embodiment of the present technology. First, the frame 210 is formed on the upper surface of the substrate 240 by a molding method (step S911). Next, the sensor chip 230 is die-bonded to the substrate 240 (step S912), and then wire-bonded (step S913). Next, the cavity is sealed by a compression molding method (step S914). Next, individualization is performed (step S915), and various post-processing steps are performed as necessary, after which the manufacturing process of the semiconductor package 200 is completed.

[0054] Thus, according to the modified example of the first embodiment of the present technology, after the frame 210 is formed, die bonding and wire bonding are performed before singulation, so that the frames for multiple chips can be formed at once.

[0055] 2. Second Embodiment In the first embodiment described above, the upper surface (i.e., the light-receiving surface) of the transparent material 220 is flat, but this shape is not limiting. The semiconductor package 200 in this second embodiment differs from the first embodiment in that the upper surface of the transparent material 220 has a convex shape.

[0056] 9 is an example of a cross-sectional view of a semiconductor package 200 according to a second embodiment of the present technology. The semiconductor package 200 according to the second embodiment differs from the first embodiment in that the shape of the top surface of the transparent material 220 is convex. This shape allows the transparent material 220 to function as a convex lens.

[0057] 10 is a diagram for explaining a manufacturing method of a semiconductor package 200 according to a second embodiment of the present technology. The manufacturing method according to the second embodiment is the same as that according to the first embodiment, except that the shape of the mold 300 used in the molding method indicated by d in the figure is different.

[0058] At d in the figure, by forming the cavity in the mold 300 into a convex lens shape, a convex lens-shaped transparent material 220 can be integrally molded. The planar shape of the transparent material 220 when viewed from the Z-axis (optical axis) direction is, for example, round, but is not limited to this shape. For example, the planar shape of the transparent material 220 can be square on the periphery and a round lens portion in the center. Alternatively, the planar shape of the convex lens-shaped transparent material 220 can be square. Since any planar shape can be set by designing the mold 300, the degree of freedom in lens design (for example, the degree of freedom in the angle of light on the periphery) is improved.

[0059] It should be noted that the modified example of the first embodiment can be applied to the second embodiment.

[0060] As described above, according to the second embodiment of the present technology, the upper surface of the transparent material 220 is made convex, so that the transparent material 220 can have the function of a convex lens.

[0061] 3. Third Embodiment In the first embodiment described above, the upper surface (i.e., the light-receiving surface) of the transparent material 220 is flat, but this shape is not limiting. The semiconductor package 200 in this third embodiment differs from the first embodiment in that the upper surface of the transparent material 220 has a concave shape.

[0062] 11 is an example of a cross-sectional view of a semiconductor package 200 according to a third embodiment of the present technology. The semiconductor package 200 according to the third embodiment differs from the first embodiment in that the shape of the upper surface of the transparent material 220 is concave. This shape allows the transparent material 220 to function as a concave lens.

[0063] The manufacturing method in the third embodiment is the same as that in the first embodiment, except that the shape of the die 300 used in the molding method is different.

[0064] It should be noted that the modified example of the first embodiment can be applied to the third embodiment.

[0065] As described above, according to the third embodiment of the present technology, the upper surface of the transparent material 220 is concave, so that the transparent material 220 can have the function of a concave lens.

[0066] 4. Fourth Embodiment In the first embodiment described above, the cavity is filled with one layer of transparent material 220. However, this is not limiting. The semiconductor package 200 in this fourth embodiment differs from the first embodiment in that the transparent material 220 includes multiple layers with different refractive indices.

[0067] 12 is an example of a cross-sectional view of a semiconductor package 200 according to a fourth embodiment of the present technology. The semiconductor package 200 according to the fourth embodiment differs from the first embodiment in that the transparent material 220 includes an upper layer 221 and a lower layer 222 having different refractive indices. This structure allows optical characteristics to be designed arbitrarily. Although two layers having different refractive indices are used in this embodiment, three or more layers may also be used.

[0068] Moreover, the modified example of the first embodiment, the second embodiment, and the third embodiment can be applied to the fourth embodiment.

[0069] As described above, according to the fourth embodiment of the present technology, the transparent material 220 includes the upper layer 221 and the lower layer 222 having different refractive indices, and therefore the optical characteristics can be designed arbitrarily.

[0070] 5. Fifth Embodiment In the first embodiment described above, the frame 210 is disposed on the upper surface of the substrate 240, but this configuration is not limiting. The semiconductor package 200 in this fifth embodiment differs from the first embodiment in that the frame 210 is eliminated and a light-shielding film is formed on the transparent material 220.

[0071] 13 is an example of a cross-sectional view of a semiconductor package 200 according to a fifth embodiment of the present technology. The semiconductor package 200 according to the fifth embodiment differs from the first embodiment in that a frame 210 is not provided, and the side surfaces of the transparent material 220 and a region of the upper surface thereof near the periphery are covered with a light-shielding film 260. Here, the region near the periphery corresponds to a region within a predetermined distance from the periphery of the transparent material 220. The light-shielding film 260 can suppress adverse effects (such as flare) caused by reflected light from the wires 250, etc., even without the frame 210.

[0072] Next, a manufacturing method according to the fifth embodiment will be described with reference to Figures 14 and 15. First, as shown in Figure 14A, the sensor chip 230 is die-bonded to a substrate 240. A sheet substrate including a plurality of singulated substrates is used as the substrate 240.

[0073] Next, as shown in FIG. 1B, wire bonding is performed. Next, as shown in FIG. 1C, a transparent material 220 is filled into the cavity by a compression molding method, and the cavity is sealed. Next, as shown in FIG. 1D, the periphery of each singulated substrate is pre-cut to form slits 310 in order to suppress warping of the substrate 240.

[0074] 15A, a light-shielding film 260 is applied to the side surfaces of the transparent material and to the area of ​​the upper surface near the periphery thereof. Next, as shown in FIG. 15B, the substrate 240 is singulated, and singulated substrates are obtained as shown in FIG. 15C. After various post-processing steps are performed as necessary, the manufacturing process for the semiconductor package 200 is completed.

[0075] 16 is a flowchart showing an example of a method for manufacturing the semiconductor package 200 according to the fifth embodiment of the present technology. First, the sensor chip 230 is die-bonded to the substrate 240 (step S901), and wire-bonded (step S902). Next, the cavity is sealed by a compression molding method (step S903).

[0076] Next, slits 310 are formed around the periphery of each singulated substrate (step S921), and a light-shielding film 260 is applied (step S922). Next, singulation is performed (step S923), and various post-processing steps are performed as necessary, after which the manufacturing process for the semiconductor package 200 is completed.

[0077] It should be noted that the modified example of the first embodiment can be applied to the fifth embodiment.

[0078] As shown in FIG. 17, the second embodiment in which the upper surface of the transparent material 220 is convex can be applied to the fifth embodiment.

[0079] 18, the second embodiment in which the upper surface of the transparent material 220 is concave can be applied to the fifth embodiment. The fourth embodiment can also be applied to the fifth embodiment.

[0080] As described above, according to the fifth embodiment of the present technology, the side surface of the transparent material 220 and the area of ​​the upper surface thereof near the outer periphery are covered with the light-shielding film 260, so that the frame 210 can be reduced.

[0081] 6. Sixth Embodiment In the first embodiment described above, the cavity-less structure suppresses degradation of image quality, but it is preferable to improve heat dissipation capability, etc. The semiconductor package 200 in this sixth embodiment differs from the first embodiment in that a resin layer is disposed below the transparent material 220.

[0082] 19 is an example of a cross-sectional view of a semiconductor package 200 according to a sixth embodiment of the present technology. The semiconductor package 200 according to the sixth embodiment differs from the first embodiment in that a resin layer 270 is further formed. When viewed from the X-axis direction or the Y-axis direction, the resin layer 270 is disposed between the transparent material 220 and the substrate 240. In other words, the transparent material 220 is laminated on the upper surface of the resin layer 270. Furthermore, the height of the upper surface of the resin layer 270 is slightly lower than the upper surface of the sensor chip 230, and the outer periphery of the sensor chip 230 is surrounded by the resin layer 270 when viewed from the Z-axis (optical axis) direction.

[0083] The resin layer 270 is made of, for example, an insulating material having a higher thermal conductivity than the upper transparent material 220. This can improve the heat dissipation capacity.

[0084] The resin layer 270 may be made of an insulating material having a lower coefficient of thermal expansion (CTE) than the upper transparent material 220. The CTE of the resin layer 270 is set to, for example, 3 to 7 ppm / °C. This reduces stress that occurs on the adhesive surface of the sensor chip 230 due to the difference in CTE between the substrate 240 and the upper layer.

[0085] Furthermore, the resin layer 270 may be made of an insulating material, such as LCP (Liquid Crystal Polymer), that has a lower modulus of elasticity than the upper transparent material 220. This makes it possible to suppress warping of the substrate 240 and the sensor chip 230.

[0086] A manufacturing method according to the sixth embodiment will be described with reference to FIGS.

[0087] 20A, first, a frame 210 is formed on the upper surface of a substrate 240 by a molding method. Next, die bonding is performed as shown in FIG. 20B, and wire bonding is performed as shown in FIG. 20C. Next, liquid resin is dispensed using a dispenser or the like to form a resin layer 270 around the sensor chip 230 as shown in FIG. 20D.

[0088] Next, as shown in FIG. 21a, the cavity is sealed with a transparent material 220 by molding.

[0089] Next, as shown in FIG. 1B, the aggregate substrate is divided into individual pieces, and as shown in FIG. 1C, individual piece substrates are obtained.

[0090] 22 is a diagram illustrating an example of a simulation result according to the sixth embodiment of the present technology. Using a predetermined analytical model, the improvement effect of dark shading was verified by a thermal fluid simulator. Icepak (registered trademark) was used as the analytical software, and the power consumption was set to, for example, 1.138 watts (W). The thermal conductivity of the transparent material 220 was set to 1 (W·m / °C).

[0091] In the figure, "a" is an example of a simulation result of the temperature inside the pixel. The vertical axis of "a" in the figure is the temperature inside the pixel. "Tmax" is the maximum value of the temperature inside the pixel, and "Tmin" is its minimum value. "Ref" on the horizontal axis is a general reference structure with a cavity. The remaining three are structures of the sixth embodiment in which the thermal conductivity of the resin layer 270 is 0.1 (W·m / °C), 1 (W·m / °C), and 3 (W·m / °C). As illustrated in "a" in the figure, the higher the thermal conductivity of the resin layer 270, the lower the temperature inside the pixel.

[0092] 10B shows the difference between the maximum and minimum values ​​of the temperature inside the pixel of FIG. 10A. As shown in FIG. 10B, the higher the thermal conductivity of the resin layer 270, the larger the difference becomes.

[0093] In the figure, "c" indicates the difference between the maximum and minimum values ​​of Ref in "a" and the maximum and minimum values ​​in the sixth embodiment. As shown in "c" in the figure, the higher the thermal conductivity of the resin layer 270, the larger the difference from Ref.

[0094] It should be noted that each of the other embodiments can be applied to the sixth embodiment.

[0095] For example, as shown in Fig. 23 a, the second embodiment in which the upper surface of the transparent material 220 is convex can be applied to the sixth embodiment. Also, as shown in Fig. 23 b, the third embodiment in which the upper surface of the transparent material 220 is concave can be applied to the sixth embodiment. Also, as shown in Fig. 23 c, the fifth embodiment in which part of the transparent material 220 is covered with a light-shielding film 260 can be applied to the sixth embodiment.

[0096] As described above, according to the sixth embodiment of the present technology, the resin layer 270 is disposed below the transparent material 220, and therefore, the heat dissipation capability and the like can be improved.

[0097] 7. Seventh Embodiment In the above-described first embodiment, the sensor chip 230 is electrically connected to the substrate 240 by the wire 250, but there is a risk of flare occurring due to light reflected by the wire 250. The semiconductor package 200 in this seventh embodiment differs from the first embodiment in that the upper surface of the substrate 240, the side surface of the sensor chip 230, and the wire 250 are sealed with a mold resin.

[0098] FIG. 24 is an example cross-sectional view of a semiconductor package 200 according to a seventh embodiment of the present disclosure. The semiconductor package 200 according to the seventh embodiment differs from the first embodiment in that the frame 210 is not provided, but instead a molded resin 275 is formed. The molded resin 275 is a light-blocking resin that seals the upper surface of the substrate 240, the side surfaces of the sensor chip 230, and the wires 250. This can suppress flare. Furthermore, by using a material for the molded resin 275 with a lower CTE than the transparent material 220, stress generated on the adhesive surface of the sensor chip 230 due to the difference in CTE between the substrate 240 and its upper layer can be reduced. Furthermore, by using a material for the molded resin 275 with a higher thermal conductivity than the transparent material 220, heat dissipation capability can be improved.

[0099] A manufacturing method according to the seventh embodiment will be described with reference to FIGS.

[0100] 25A, the lower surface of the sensor chip 230 is bonded to the upper surface of the substrate 240. Next, as shown in FIG. 25B, the sensor chip 230 is electrically connected to the substrate 240 by wires 250.

[0101] Next, as illustrated in c in the figure, a protective film 320 is attached to the image plane of the light receiving surface of the sensor chip 230 that is surrounded by the wires 250. Then, the upper surface of the substrate 240, the side surfaces of the sensor chip 230, and the wires 250 are sealed with mold resin 275 by an OMC (Open Mold Chip) process.

[0102] Next, as shown in d in the figure, the protective film 320 is peeled off. Then, by a compression molding method, the cavity surrounded by the mold 300 and the upper surface of the sensor chip 230 is filled with the transparent material 220, and the cavity is sealed.

[0103] Next, the aggregate substrate is divided into individual pieces as shown in FIG. 26a, and individual substrates are obtained as shown in FIG. 26b.

[0104] It should be noted that each of the other embodiments can be applied to the seventh embodiment.

[0105] For example, as shown in Fig. 27A, the second embodiment in which the upper surface of the transparent material 220 is convex can be applied to the seventh embodiment, and as shown in Fig. 27B, the third embodiment in which the upper surface of the transparent material 220 is concave can be applied to the seventh embodiment.

[0106] As described above, according to the seventh embodiment of the present technology, the wire 250 is sealed with the mold resin 275, so that flare can be suppressed and heat dissipation capability can be improved.

[0107] 8. Eighth Embodiment The above-described first embodiment has a cavity-less structure, but incident light may be reflected on the upper surface (light-receiving surface) of the transparent material 220. The semiconductor package 200 in this eighth embodiment differs from the first embodiment in that the upper surface of the transparent material 220 is covered with a resin film having a moth-eye structure.

[0108] 28 is an example of a cross-sectional view of a semiconductor package 200 according to an eighth embodiment of the present technology. The semiconductor package 200 according to the eighth embodiment differs from the first embodiment in that the upper surface of the transparent material 220 is covered with a resin film 280 having a moth-eye structure. This makes it possible to suppress reflection on the upper surface of the transparent material 220.

[0109] A manufacturing method according to the eighth embodiment will be described with reference to FIGS.

[0110] 29A, the lower surface of the sensor chip 230 is bonded to the upper surface of the substrate 240. Next, as shown in FIG. 29B, the sensor chip 230 is electrically connected to the substrate 240 by wires 250. Next, as shown in FIG. 29C, the frame 210 is mounted on the upper surface of the substrate 240. Next, as shown in FIG. 29D, a transparent material 220 is filled into a cavity surrounded by the mold 300 and the upper surfaces of the substrate 240 and the sensor chip 230 by a compression molding method, and the cavity is sealed. Next, as shown in FIG. 29E, the mold 300 is removed.

[0111] Next, as illustrated in FIG. 30A, a liquid ultraviolet curable resin is applied to the upper surface of the transparent material 220 to form a resin film 280. Next, as illustrated in FIG. 30B, a transparent mold 301 for forming a moth-eye structure is mounted. Next, as illustrated in FIG. 30C, ultraviolet light is irradiated through the mold 301 to harden the resin film 280. Next, as illustrated in FIG. 30D, the mold 301 is removed and the product is separated into individual pieces. Dotted lines indicate dicing lines.

[0112] 31 , instead of the moth-eye structured resin film 280, the upper surface of the transparent material 220 can be covered with an anti-reflection film 285. This anti-reflection film 285 is formed by sputtering, vapor deposition, spray coating, or the like. The anti-reflection film 285 is an example of the first anti-reflection film described in the claims.

[0113] As described above, according to the eighth embodiment of the present technology, the upper surface (light receiving surface) of the transparent material 220 is covered with the resin film 280 having the moth-eye structure, so that reflection on the upper surface can be suppressed.

[0114] 9. Ninth Embodiment In the above-described first embodiment, the sensor chip 230 is electrically connected to the substrate 240 by the wire 250, but there is a risk of flare occurring due to light reflected by the wire 250. The semiconductor package 200 in this ninth embodiment differs from the first embodiment in that the wire 250 is sealed with a light-blocking resin.

[0115] 32 is an example of a cross-sectional view of a semiconductor package 200 according to a ninth embodiment of the present technology. The semiconductor package 200 according to the ninth embodiment differs from the first embodiment in that the wires 250 are sealed with a light-shielding resin 290 having light-shielding and insulating properties.

[0116] As described above, according to the ninth embodiment of the present technology, the wire 250 is sealed with the light-blocking resin, so that flare can be suppressed.

[0117] 10. Tenth Embodiment In the above-described ninth embodiment, it is difficult to further improve the heat dissipation capability because the lower surface of the sensor chip 230 is bonded to the substrate 240. The semiconductor package 200 in this tenth embodiment differs from the ninth embodiment in that the sensor chip 230 is disposed in an opening in the substrate 240.

[0118] 33 is an example of a cross-sectional view of a semiconductor package 200 according to a tenth embodiment of the present technology. The semiconductor package 200 according to the tenth embodiment differs from the ninth embodiment in that a substrate 240 has an opening in which a sensor chip 230 is disposed. In the drawing, the opening extends from coordinates X1 to X2 as viewed from the Y-axis direction. In addition, a predetermined number of solder balls 295 are formed on the lower surface of the substrate 240.

[0119] By disposing the sensor chip 230 in the opening of the substrate 240, the underside of the chip is exposed, thereby improving the heat dissipation capability. For example, a heat dissipation member such as a heat sink can be bonded to the exposed underside.

[0120] A manufacturing method according to the tenth embodiment will be described with reference to FIGS.

[0121] 34A, an aggregate substrate including a plurality of substrates 240 with openings is mounted on a release sheet 330, and a sensor chip 230 is mounted in each of the openings. Then, the aggregate substrate and the sensor chip 230 are bonded at room temperature.

[0122] Then, as shown in FIG. 1B, the sensor chip 230 is electrically connected to the substrate 240 by wires 250. Next, as shown in FIG. 1C, a light-shielding resin 290 is applied to seal the wires 250. Next, as shown in FIG. 1D, a tapered frame 210 is mounted on the substrate 240. Next, as shown in FIG. 1D, a transparent material 220 is filled into a cavity surrounded by a mold 300 and the upper surfaces of the substrate 240 and the sensor chip 230 by a compression molding method, and the cavity is sealed, as shown in FIG. 1E.

[0123] Next, the aggregate substrate is divided into individual pieces as shown in Fig. 35A, and the individual substrates are obtained as shown in Fig. 35B. Then, the release sheet 330 is peeled off as shown in Fig. 35C.

[0124] In the above-described structure, the frame 210 formed in advance into a tapered shape is mounted on the substrate 240, but the frame 210 can also be formed by a molding method.

[0125] In this case, the cross-sectional shape of the frame 210 can be rectangular, as shown in Fig. 36. The same applies to the tenth and subsequent embodiments.

[0126] Furthermore, each of the other embodiments can be applied to the tenth embodiment.

[0127] For example, as shown in Fig. 37A, the second embodiment in which the upper surface of the transparent material 220 is convex can be applied to the tenth embodiment. Also, as shown in Fig. 37B, the third embodiment in which the upper surface of the transparent material 220 is concave can be applied to the tenth embodiment.

[0128] 38A, the moth-eye structured resin film 280 exemplified in the eighth embodiment can be applied to the tenth embodiment. Also, as shown in FIG. 38B, the moth-eye structured resin film 280 exemplified in the eighth embodiment and the second embodiment in which the upper surface of the transparent material 220 is convex can be applied to the tenth embodiment. Also, as shown in FIG. 38C, the moth-eye structured resin film 280 exemplified in the eighth embodiment and the third embodiment in which the upper surface of the transparent material 220 is concave can be applied to the tenth embodiment.

[0129] 39A, the anti-reflection film 285 illustrated in the eighth embodiment can be applied to the tenth embodiment. As illustrated in FIG. 39B, the anti-reflection film 285 illustrated in the eighth embodiment and the second embodiment in which the upper surface of the transparent material 220 is convex can be applied to the tenth embodiment. As illustrated in FIG. 39C, the anti-reflection film 285 illustrated in the eighth embodiment and the third embodiment in which the upper surface of the transparent material 220 is concave can be applied to the tenth embodiment.

[0130] As described above, according to the tenth embodiment of the present technology, the wires 250 are sealed with a light-blocking resin, and the sensor chip 230 is disposed in the opening of the substrate 240, so that flare can be suppressed and heat dissipation capability can be improved.

[0131] The fifth embodiment in which a part of the transparent material 220 is covered with the light-shielding film 260 can be applied to the above-described tenth embodiment. The semiconductor package 200 in this modified example of the tenth embodiment differs from the tenth embodiment in that the fifth embodiment is applied.

[0132] 40A and 40B are an example of a cross-sectional view and a top view of a semiconductor package 200 according to a modification of the tenth embodiment of the present technology. In the drawing, "a" shows the cross-sectional view of the semiconductor package 200, and "b" shows the top view of the semiconductor package 200.

[0133] As illustrated in a in the same figure, the semiconductor package 200 in the modified example of the tenth embodiment differs from the tenth embodiment in that a portion of the transparent material 220 is covered with a light-shielding film 260, as illustrated in the fifth embodiment.

[0134] As shown in FIG. 1B, a rectangular opening is formed in the light-shielding film 260 when viewed from above, and incident light is guided to the image plane of the sensor chip 230 through the opening.

[0135] 41, the opening of the light-shielding film 260 may be round when viewed from above. The opening of the light-shielding film 260 may have any shape as long as it can introduce sufficient light into the light-receiving surface of the sensor chip 230, and is not limited to a rectangular or round shape. For example, it may be a rectangle with rounded corners.

[0136] A manufacturing method according to a modification of the ninth embodiment will be described with reference to FIGS.

[0137] 42 a, an aggregate substrate including a plurality of substrates 240 with openings is mounted on a release sheet 330, and a sensor chip 230 is mounted in each of the openings. Then, the aggregate substrate and the sensor chip 230 are bonded at room temperature.

[0138] Then, as shown in FIG. 1B, the sensor chip 230 is electrically connected to the substrate 240 by wires 250. Next, as shown in FIG. 1C, a light-shielding resin 290 is applied to seal the wires 250. Next, as shown in FIG. 1D, a mold 302 having a cavity is mounted.

[0139] Next, as shown in Fig. 43 a, a transparent material 220 is filled into the cavity by a molding method, and the cavity is sealed. Next, as shown in Fig. 43 b, the mold 302 is removed. Next, as shown in Fig. 43 c, a mold 303 is mounted, covering areas other than the area where the light-shielding film 260 is to be formed. Next, as shown in Fig. 43 d, the light-shielding film 260 is formed.

[0140] Next, as shown in FIG. 44a, the mold 303 is removed, and the aggregate substrate is divided into individual pieces as shown in FIG. 44b.

[0141] As described above, according to the modification of the tenth embodiment of the present technology, the fifth embodiment is applied, and therefore the number of frames 210 can be reduced.

[0142] 11. Eleventh Embodiment In the above-described first embodiment, the sensor chip 230 is electrically connected to the substrate 240 by the wire 250, but there is a risk of flare occurring due to light reflected by the wire 250. The semiconductor package 200 in this eleventh embodiment differs from the first embodiment in that the wire 250 is covered with an anti-reflection film.

[0143] 45 is an example of a cross-sectional view of a semiconductor package 200 according to an eleventh embodiment of the present technology. The semiconductor package 200 according to the eleventh embodiment differs from the first embodiment in that the wires 250 are covered with an anti-reflection film 255. The anti-reflection film 255 is an example of a second anti-reflection film described in the claims.

[0144] As described above, according to the eleventh embodiment of the present technology, the wire 250 is covered with the anti-reflection film 255, so that flare can be suppressed.

[0145] 12. Twelfth Embodiment In the above-described eleventh embodiment, it is difficult to further improve the heat dissipation capability because the lower surface of the sensor chip 230 is bonded to the substrate 240. The semiconductor package 200 in this twelfth embodiment differs from the eleventh embodiment in that the sensor chip 230 is disposed in an opening in the substrate 240.

[0146] 46 is an example of a cross-sectional view of a semiconductor package 200 according to a twelfth embodiment of the present technology. The semiconductor package 200 according to the twelfth embodiment differs from the eleventh embodiment in that the substrate 240 has an opening in which the sensor chip 230 is disposed. In addition, a predetermined number of solder balls 295 are formed on the lower surface of the substrate 240.

[0147] Furthermore, each of the other embodiments can be applied to the twelfth embodiment.

[0148] For example, as shown in Fig. 47A, the second embodiment in which the upper surface of the transparent material 220 is convex can be applied to the twelfth embodiment. Also, as shown in Fig. 47B, the third embodiment in which the upper surface of the transparent material 220 is concave can be applied to the twelfth embodiment. Also, as shown in Fig. 47C, the fifth embodiment in which part of the transparent material 220 is covered with a light-shielding film 260 can be applied to the twelfth embodiment.

[0149] 48A, the moth-eye structured resin film 280 exemplified in the eighth embodiment can be applied to the twelfth embodiment. Also, as shown in FIG. 48B, the moth-eye structured resin film 280 exemplified in the eighth embodiment and the second embodiment in which the upper surface of the transparent material 220 is convex can be applied to the twelfth embodiment. Also, as shown in FIG. 48C, the moth-eye structured resin film 280 exemplified in the eighth embodiment and the third embodiment in which the upper surface of the transparent material 220 is concave can be applied to the twelfth embodiment.

[0150] 49A, the anti-reflection film 285 illustrated in the eighth embodiment can be applied to the twelfth embodiment. Also, as illustrated in FIG. 49B, the anti-reflection film 285 illustrated in the eighth embodiment and the second embodiment in which the upper surface of the transparent material 220 is convex can be applied to the twelfth embodiment. Also, as illustrated in FIG. 49C, the anti-reflection film 285 illustrated in the eighth embodiment and the third embodiment in which the upper surface of the transparent material 220 is concave can be applied to the twelfth embodiment.

[0151] As described above, according to the twelfth embodiment of the present technology, the wire 250 is covered with the anti-reflection film 255, and the sensor chip 230 is arranged in the opening of the substrate 240, thereby suppressing flare and improving heat dissipation capability.

[0152] 13. Application Examples to Mobile Bodies The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be realized as a device mounted on any type of mobile body, such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, personal mobility, an airplane, a drone, a ship, or a robot.

[0153] FIG. 50 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile object control system to which the technology of the present disclosure can be applied.

[0154] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in Fig. 50, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside-vehicle information detection unit 12030, an inside-vehicle information detection unit 12040, and an integrated control unit 12050. Also shown as functional components of the integrated control unit 12050 are a microcomputer 12051, an audio / video output unit 12052, and an in-vehicle network I / F (Interface) 12053.

[0155] The drivetrain control unit 12010 controls the operation of devices related to the drivetrain of the vehicle in accordance with various programs. For example, the drivetrain control unit 12010 functions as a control device for a drive force generating device for generating a drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating a braking force of the vehicle.

[0156] The body system control unit 12020 controls the operation of various devices equipped in the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as headlamps, backup lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves transmitted from a portable device that serves as a key or signals from various switches can be input to the body system control unit 12020. The body system control unit 12020 receives these radio waves or signals and controls the vehicle's door lock device, power window device, lamps, etc.

[0157] The outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, an imaging unit 12031 is connected to the outside-vehicle information detection unit 12030. The outside-vehicle information detection unit 12030 causes the imaging unit 12031 to capture images outside the vehicle and receives the captured images. The outside-vehicle information detection unit 12030 may perform object detection processing or distance detection processing for people, cars, obstacles, signs, characters on the road surface, etc. based on the received images.

[0158] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal corresponding to the amount of light received. The imaging unit 12031 can output the electrical signal as an image or as distance measurement information. The light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.

[0159] The in-vehicle information detection unit 12040 detects information inside the vehicle. For example, a driver state detection unit 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing off.

[0160] The microcomputer 12051 can calculate control target values ​​for the driving force generating device, steering mechanism, or braking device based on the information inside and outside the vehicle acquired by the outside-vehicle information detection unit 12030 or the inside-vehicle information detection unit 12040, and output control commands to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an ADAS (Advanced Driver Assistance System), including vehicle collision avoidance or impact mitigation, following driving based on the distance between vehicles, maintaining vehicle speed, vehicle collision warning, vehicle lane departure warning, etc.

[0161] In addition, the microcomputer 12051 can perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on driver operation, by controlling the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle obtained by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040.

[0162] Furthermore, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information outside the vehicle acquired by the outside information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside information detection unit 12030, and perform cooperative control aimed at preventing glare, such as switching from high beams to low beams.

[0163] The audio / video output unit 12052 transmits at least one of audio and video output signals to an output device capable of visually or audibly notifying information to vehicle occupants or the outside of the vehicle. In the example of Fig. 50, the output devices are exemplified by an audio speaker 12061, a display unit 12062, and an instrument panel 12063. The display unit 12062 may include, for example, at least one of an on-board display and a head-up display.

[0164] FIG. 51 is a diagram showing an example of the installation position of the imaging unit 12031.

[0165] In FIG. 51, the imaging unit 12031 includes imaging units 12101, 12102, 12103, 12104, and 12105.

[0166] The imaging units 12101, 12102, 12103, 12104, and 12105 are provided, for example, at positions such as the front nose, side mirrors, rear bumper, back door, and the top of the windshield inside the vehicle cabin of the vehicle 12100. The imaging unit 12101 provided on the front nose and the imaging unit 12105 provided on the top of the windshield inside the vehicle cabin mainly acquire images of the front of the vehicle 12100. The imaging units 12102 and 12103 provided on the side mirrors mainly acquire images of the sides of the vehicle 12100. The imaging unit 12104 provided on the rear bumper or back door mainly acquires images of the rear of the vehicle 12100. The imaging unit 12105 provided on the top of the windshield inside the vehicle cabin is mainly used to detect preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, lanes, etc.

[0167] 49 shows an example of the imaging ranges of the imaging units 12101 to 12104. Imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose, imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided on the side mirrors, respectively, and imaging range 12114 indicates the imaging range of the imaging unit 12104 provided on the rear bumper or back door. For example, by overlaying the image data captured by the imaging units 12101 to 12104, an overhead image of the vehicle 12100 viewed from above can be obtained.

[0168] At least one of the image capturing units 12101 to 12104 may have a function of acquiring distance information. For example, at least one of the image capturing units 12101 to 12104 may be a stereo camera made up of multiple image capturing elements, or may be an image capturing element having pixels for phase difference detection.

[0169] For example, based on the distance information obtained from the imaging units 12101 to 12104, the microcomputer 12051 can calculate the distance to each three-dimensional object within the imaging ranges 12111 to 12114 and the change in this distance over time (relative speed with respect to the vehicle 12100), thereby extracting as a preceding vehicle, in particular, the three-dimensional object that is the closest three-dimensional object on the path of the vehicle 12100 and traveling in approximately the same direction as the vehicle 12100 at a predetermined speed (e.g., 0 km / h or higher). Furthermore, the microcomputer 12051 can set a vehicle-to-vehicle distance to be maintained in advance in front of the preceding vehicle, and perform automatic braking control (including follow-up stop control), automatic acceleration control (including follow-up start control), etc. In this way, cooperative control can be performed for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on driver operation.

[0170] For example, the microcomputer 12051 classifies and extracts three-dimensional object data regarding three-dimensional objects into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects based on distance information obtained from the imaging units 12101 to 12104, and can use the data for automatic obstacle avoidance. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. The microcomputer 12051 then determines a collision risk that indicates the risk of collision with each obstacle, and when the collision risk is equal to or greater than a set value and a collision is possible, the microcomputer 12051 can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or avoidance steering via the drive system control unit 12010.

[0171] At least one of the image capturing units 12101 to 12104 may be an infrared camera that detects infrared rays. For example, the microcomputer 12051 can recognize a pedestrian by determining whether a pedestrian is present in the images captured by the image capturing units 12101 to 12104. Such pedestrian recognition is performed, for example, by extracting feature points from the images captured by the image capturing units 12101 to 12104 as infrared cameras and performing pattern matching on a series of feature points that indicate the outline of an object to determine whether the object is a pedestrian. When the microcomputer 12051 determines that a pedestrian is present in the images captured by the image capturing units 12101 to 12104 and recognizes the pedestrian, the audio / image output unit 12052 controls the display unit 12062 to superimpose a rectangular outline on the recognized pedestrian for emphasis. The audio / image output unit 12052 may also control the display unit 12062 to display an icon or the like indicating the pedestrian at a desired position.

[0172] An example of a vehicle control system to which the technology according to the present disclosure can be applied has been described above. The technology according to the present disclosure can be applied to the imaging unit 12031 of the above-described configuration. Specifically, the semiconductor device 100 of FIG. 1 can be applied to the imaging unit 12031. By applying the technology according to the present disclosure to the imaging unit 12031, it is possible to suppress degradation in image quality of image data, thereby reducing driver fatigue.

[0173] Note that the above-described embodiment shows an example for realizing the present technology, and the matters in the embodiment and the matters specifying the invention in the claims correspond to each other. Similarly, the matters specifying the invention in the claims and the matters in the embodiment of the present technology having the same name correspond to each other. However, the present technology is not limited to the embodiment, and can be realized by applying various modifications to the embodiment within the scope of the gist thereof.

[0174] The effects described in this specification are merely examples and are not limiting, and other effects may also be obtained.

[0175] The present technology may also be configured as follows. (1) A semiconductor package comprising: a substrate; a semiconductor chip connected to the substrate by a wire; and a transparent material attached to a light-receiving surface of the semiconductor chip. (3) The semiconductor package according to (1) or (2), further comprising a frame, wherein the semiconductor chip is disposed in a region surrounded by the frame when viewed from the optical axis direction, and the transparent material is attached to the light-receiving surfaces of the substrate and the semiconductor chip, the side surfaces of the semiconductor chip, and the inner wall of the frame. (3) The semiconductor package according to (2), wherein the inner diameter of the frame decreases with increasing distance from the substrate. (4) The semiconductor package according to any of (1) to (3), wherein the light-receiving surface of the transparent material is flat. (5) The semiconductor package according to any of (1) to (3), wherein the light-receiving surface of the transparent material has a concave shape. (6) The semiconductor package according to any of (1) to (3), wherein the light-receiving surface of the transparent material has a convex shape. (7) The semiconductor package according to any one of (1) to (6), wherein the transparent material includes a plurality of layers having different refractive indices. (8) The semiconductor package according to (1), further comprising a light-shielding film that covers a region of the light-receiving surface of the transparent material near the periphery and the side surfaces of the transparent material. (9) The semiconductor package according to any one of (1) to (8), further comprising a resin layer disposed between the transparent material and the substrate. (10) The semiconductor package according to (1), further comprising a molded resin that seals the light-receiving surface of the substrate, the side surfaces of the semiconductor chip, and the wires. (11) The semiconductor package according to any one of (1) to (10), further comprising a moth-eye structured resin film that covers the light-receiving surface of the transparent material. (12) The semiconductor package according to any one of (1) to (10), further comprising a first anti-reflection film that covers the light-receiving surface of the transparent material. (13) The semiconductor package according to (1), further comprising a light-shielding resin that seals the wires. (14) The semiconductor package according to (1), wherein an opening is formed in the substrate, and the semiconductor chip is disposed in the opening.(15) The semiconductor package according to (1), further comprising a second anti-reflection film covering the wire. (16) A semiconductor device comprising: a substrate; a semiconductor chip connected to the substrate by a wire; a transparent material attached to a light-receiving surface of the semiconductor chip; and a signal processing circuit for processing data from the semiconductor chip. (17) A method for manufacturing a semiconductor package, comprising: a wire bonding step for connecting the semiconductor chip to the substrate by a wire; and a molding step for filling a cavity surrounded by a mold and the light-receiving surface of the semiconductor chip with a transparent material by a molding method. (18) The method for manufacturing a semiconductor package according to (17), further comprising a mounting step for mounting a frame on the substrate after the wire bonding step, wherein the molding step is performed after the mounting step. (19) The method for manufacturing a semiconductor package according to (17), further comprising a frame molding step for molding a frame on the substrate, wherein the wire bonding step and the molding step are performed after the frame molding step. (20) The method for manufacturing a semiconductor package according to (17), further comprising a coating step of coating a light-shielding film that covers the region near the periphery of the light-receiving surface of the transparent material and the side surfaces of the transparent material after the molding step.

[0176] 100 Semiconductor device 110 Optical unit 120 DSP circuit 130 Display unit 140 Operation unit 150 Bus 160 Frame memory 170 Storage unit 180 Power supply unit 200 Semiconductor package 210 Frame 220 Transparent material 221 Upper layer 222 Lower layer 225 Cover glass 230 Sensor chip 240 Substrate 250 Wire 255, 285 Anti-reflection film 260 Light-shielding film 270 Resin layer 275 Molding resin 280 Resin film 290 Light-shielding resin 295 Solder ball 300, 301, 302, 303 Mold 310 Slit 320 Protective film 330 Release sheet 12031 Imaging unit

Claims

1. A semiconductor package comprising: a substrate; a semiconductor chip connected to the substrate by a wire; and a transparent material attached to the light-receiving surface of the semiconductor chip.

2. The semiconductor package according to claim 1, further comprising a frame, wherein the semiconductor chip is disposed in an area surrounded by the frame when viewed from the optical axis direction, and the transparent material adheres to the light-receiving surfaces of the substrate and the semiconductor chip, the side surfaces of the semiconductor chip, and the inner wall of the frame.

3. The semiconductor package according to claim 2, wherein the inner diameter of the frame decreases with increasing distance from the substrate.

4. The semiconductor package according to claim 1, wherein the light-receiving surface of the transparent material is flat.

5. The semiconductor package according to claim 1, wherein the light-receiving surface of the transparent material is concave.

6. The semiconductor package according to claim 1, wherein the light-receiving surface of the transparent material is convex.

7. The semiconductor package according to claim 1, wherein the transparent material includes a plurality of layers with different refractive indices.

8. The semiconductor package according to claim 1, further comprising a light-shielding film that covers an area near the periphery of the light-receiving surface of said transparent material and the side surfaces of said transparent material.

9. The semiconductor package according to claim 1, further comprising a resin layer disposed between the transparent material and the substrate.

10. The semiconductor package according to claim 1, further comprising a molding resin that seals the light-receiving surface of the substrate, the side surface of the semiconductor chip, and the wires.

11. The semiconductor package according to claim 1, further comprising a moth-eye structured resin film covering the light-receiving surface of the transparent material.

12. The semiconductor package according to claim 1, further comprising a first anti-reflection film covering the light-receiving surface of said transparent material.

13. The semiconductor package according to claim 1, further comprising a light-shielding resin that seals the wires.

14. The semiconductor package according to claim 1, wherein an opening is formed in the substrate, and the semiconductor chip is disposed in the opening.

15. The semiconductor package according to claim 1, further comprising a second anti-reflective coating covering said wires.

16. A semiconductor device comprising: a substrate; a semiconductor chip connected to the substrate by a wire; a transparent material attached to the light-receiving surface of the semiconductor chip; and a signal processing circuit that processes data from the semiconductor chip.

17. A method for manufacturing a semiconductor package, comprising: a wire bonding step of connecting a semiconductor chip to a substrate with wires; and a molding step of filling a cavity surrounded by a mold and the light-receiving surface of the semiconductor chip with a transparent material by a molding method.

18. The method for manufacturing a semiconductor package according to claim 17, further comprising a mounting step of mounting a frame to the substrate after the wire bonding step, wherein the molding step is performed after the mounting step.

19. The method for manufacturing a semiconductor package according to claim 17, further comprising a frame forming step of forming a frame on said substrate, wherein said wire bonding step and said molding step are performed after said frame forming step.

20. The method for manufacturing a semiconductor package according to claim 17, further comprising, after the molding step, a coating step of coating a light-shielding film that covers the region near the periphery of the light-receiving surface of the transparent material and the side surfaces of the transparent material.

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