OLED display panel and manufacturing method therefor, and display apparatus

Abstract

An OLED display panel and a manufacturing method therefor, and a display apparatus. The OLED display panel comprises: a substrate (01), and a first pixel electrode layer (02) and a first pixel definition layer (07), which are arranged on one side of the substrate in sequence, wherein a light-emitting assembly (05) is arranged in a pixel opening corresponding to the first pixel definition layer (07), the light-emitting assembly (05) comprises a first light-emitting layer (051), a second light-emitting layer (053), which is on one side of the first light-emitting layer and away from the substrate, and a connecting layer (052), which is between the first light-emitting layer and the second light-emitting layer, and the light-emitting assembly (05) is located on the side of the first pixel electrode layer (02) that is away from the substrate, a protrusion portion (0201) is arranged in an edge region of the first pixel electrode layer (02) that is close to the first pixel definition layer (07), and the protrusion portion (0201) is located on the side of the first pixel electrode layer (02) that is away from the substrate.

Description

OLED display panels and their manufacturing methods, display devices

[0001] This application claims priority to Chinese Patent Application No. 202410703341.9, filed on May 31, 2024, entitled "OLED Display Panel and Method of Manufacturing Thereof, Display Device", the contents of which shall be construed as incorporated herein by reference. Technical Field

[0002] This disclosure relates to, but is not limited to, the field of display technology, and in particular to an OLED display panel, a method for manufacturing the same, and a display device. Background Technology

[0003] Tandem OLED is a high-efficiency OLED structure formed by connecting multiple traditional OLED devices in series through a connecting layer. Currently, adjacent light-emitting layers in tandem OLEDs are typically separated by a connecting layer (CGL) to prevent crosstalk between adjacent pixels. The pixel definition layer (PDL) uses an ONO structure with different etching ratios to achieve an inverted trapezoidal undercut structure, which isolates the strongly conductive film layer of the CGL in the light-emitting device. Furthermore, to mitigate severe distortion in the OLED device and the cathode IZO at the undercut, a foot is placed at the edge of the PDL to reduce distortion. Therefore, the entire pixel is divided into a normal AA (display) area, a distortion area, and a separation area. However, in the above structure, the footing structure extends outwards, causing the lower light-emitting layer in the footing distortion area to fail to light up. Consequently, under voltage, only the upper light-emitting layer lights up, leading to display abnormalities. Summary of the Invention

[0004] The following is an overview of the subject matter described in detail in this disclosure. This overview is not intended to limit the scope of the claims.

[0005] This disclosure provides an OLED display panel, including: a substrate, and a first pixel electrode layer and a first pixel definition layer sequentially disposed on one side of the substrate;

[0006] In this embodiment, a light-emitting component is disposed within the pixel opening corresponding to the first pixel definition layer. The light-emitting component includes a first light-emitting layer, a first light-emitting layer on one side of the first light-emitting layer and away from the substrate, and a connecting layer between the first light-emitting layer and the second light-emitting layer. The light-emitting component is located on the side of the first pixel electrode layer away from the substrate. A protrusion is disposed on the edge region of the first pixel electrode layer near the first pixel definition layer. The protrusion is located on the side of the first pixel electrode layer away from the substrate. An undercut structure is disposed on the edge of the first pixel definition layer near the pixel opening. The distance between the farthest edge and the nearest edge of the undercut structure from the center of the pixel opening projected onto the substrate is less than the distance between the edge of the protrusion near the center of the pixel opening and the nearest edge projected onto the substrate.

[0007] This disclosure also provides a display device, including an OLED display panel as described above.

[0008] This disclosure also provides a method for manufacturing an OLED display panel, including:

[0009] Preparing a substrate;

[0010] A first pixel electrode layer and a first pixel definition layer are sequentially formed on one side of the substrate;

[0011] In this embodiment, a light-emitting component is disposed within the pixel opening corresponding to the second pixel definition layer. The light-emitting component includes a first light-emitting layer, a second light-emitting layer on one side of the first light-emitting layer and away from the substrate, and a connecting layer between the first light-emitting layer and the second light-emitting layer. The light-emitting component is located on the side of the first pixel electrode layer away from the substrate. A protrusion is disposed on the edge region of the first pixel electrode layer near the first pixel definition layer. The protrusion is located on the side of the first pixel electrode layer away from the substrate. An undercut structure is disposed on the edge of the first pixel definition layer near the pixel opening. The distance between the farthest edge and the nearest edge of the undercut structure from the center of the pixel opening projected onto the substrate is less than the distance between the edge of the protrusion near the center of the pixel opening and the nearest edge projected onto the substrate.

[0012] After reading and understanding the accompanying diagrams and detailed descriptions, the other aspects can be understood.

[0013] Overview of the attached figures

[0014] Figure 1 is a schematic cross-sectional view of an OLED display panel;

[0015] Figure 2 is a schematic diagram comparing current paths under different voltages;

[0016] Figure 3 is a structural cross-sectional schematic diagram of a first type of OLED display panel according to an embodiment of the present disclosure;

[0017] Figure 4 is a partially enlarged cross-sectional view of the structure of the first type of OLED display panel according to an embodiment of the present disclosure;

[0018] Figure 5 is a schematic diagram comparing current paths under different voltages according to an embodiment of this disclosure;

[0019] Figure 6 is a schematic cross-sectional view of a light-emitting component according to an embodiment of the present disclosure;

[0020] Figure 7 is a schematic cross-sectional view of another light-emitting component according to an embodiment of the present disclosure;

[0021] Figure 8 is a structural cross-sectional schematic diagram of a second type of OLED display panel according to an embodiment of this disclosure;

[0022] Figure 9 is a partially enlarged cross-sectional view of the structure of the second type of OLED display panel according to an embodiment of this disclosure;

[0023] Figure 10 is a structural cross-sectional schematic diagram of a third type of OLED display panel according to an embodiment of this disclosure;

[0024] Figure 11 is a partially enlarged cross-sectional view of the third type of OLED display panel according to an embodiment of this disclosure;

[0025] Figure 12 is a partially enlarged cross-sectional view of the fourth type of OLED display panel according to an embodiment of the present disclosure;

[0026] Figure 13 is a schematic flowchart of a method for preparing an OLED display panel according to an embodiment of the present disclosure.

[0027] Detailed Explanation

[0028] The embodiments of this disclosure will be described in further detail below with reference to the accompanying drawings and examples. The following examples are for illustrative purposes only and are not intended to limit the scope of this disclosure. Unless otherwise specified, the embodiments and features described in this disclosure can be arbitrarily combined with each other.

[0029] To make the objectives, technical solutions, and advantages of this disclosure clearer, the following detailed description is provided in conjunction with exemplary embodiments and the accompanying drawings.

[0030] Unless otherwise defined, the technical or scientific terms used in the embodiments of this disclosure should have the ordinary meaning understood by one of ordinary skill in the art to which this disclosure pertains. The terms "first," "second," and similar terms used in the embodiments of this disclosure do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Terms such as "comprising" or "including" mean that the element or object preceding the word encompasses the elements or objects listed following the word and their equivalents, without excluding other elements or objects. Terms such as "connected" or "linked" are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. Terms such as "upper," "lower," "left," and "right" are used only to indicate relative positional relationships; when the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0031] Currently, adjacent light-emitting layers in Tandem OLEDs are generally connected by a connecting layer (CGL) to prevent crosstalk between adjacent pixels. Figure 1 shows a pixel anode architecture of an OLED, from bottom to top: substrate 01, anode pixel electrode layer 02, planarization layer 03, and pixel definition layer 04. The anode metal of the anode pixel electrode layer is a two-layer structure of TAT and ITO, with SiOx used to fill the gaps between the anode metals. The pixel definition layer 04 (PDL) uses an ONO structure to achieve an inverted trapezoidal undercut structure through different etching ratios. The inverted trapezoidal undercut structure isolates the CGL strongly conductive film layer in the light-emitting device. After the OLED device is deposited, the lower light-emitting layer (R&G light-emitting layer, i.e., the yellow light-emitting layer composed of red and green light-emitting layers) is connected in series with the upper light-emitting layer (B light-emitting layer, i.e., the blue light-emitting layer) through the CGL conductive layer. The entire cathode electrochemical layer (IZO, indium zinc oxide) is then covered above the B light-emitting layer. In addition, to mitigate severe distortion in the OLED device and cathode motor layer at the undercut, footings are placed at the edge of the PDL to reduce distortion. Therefore, the entire pixel is divided into a normal display (AA) area, a distortion area, and a blocking area.

[0032] However, in the structure shown in Figure 1, the lower light-emitting layer of the Footing distortion area cannot be activated due to the extension of the Footing structure. Therefore, under voltage, only the upper light-emitting layer is activated, i.e., only blue light is activated, resulting in display abnormalities. Please refer to Figure 2. Below 4.8V, the OLED device leaks current through the isolation area without emitting light, as shown by the arrow path in circuit a in Figure 2. At voltages of 4.8 to 5.2V, the current through the isolation area passes through CGL, activating the upper light-emitting layer on the Footing area, as shown by the arrow path in circuit b in Figure 2. At voltages of 5.2 to 7V, the upper light-emitting layer on the Footing area and the lower light-emitting layer of the AA area emit light, as shown by the arrow path in circuit c in Figure 2. At 7V, the RGB light in the AA area is activated normally, i.e., both the upper and lower light-emitting layers are activated simultaneously, but there is still blue light above the Footing area, as shown by the arrow path in circuit d in Figure 2. Based on the above summary of light emission characteristics, leakage current cannot be avoided by passing through the isolation area. However, due to the extension of the Footing structure, the lower light-emitting layer under the Footing distortion area cannot be turned on. Therefore, under the action of voltage, the current only passes through the R2 path in Figure 2 and not through the R1 path, resulting in only the upper light-emitting layer being turned on, leading to display abnormalities.

[0033] In the embodiments of this disclosure, a structural design of the first pixel electrode layer close to the substrate is proposed to improve the coverage area of ​​the pixel electrode in the footing region, thereby improving the problem of the upper light-emitting layer being illuminated alone.

[0034] Referring to Figures 3 and 4, a structural cross-sectional schematic diagram of an OLED display panel according to an embodiment of the present disclosure is shown. The OLED display panel includes:

[0035] A substrate 01, and a first pixel electrode layer 02 and a first pixel definition layer 07 sequentially disposed on one side of the substrate;

[0036] In this design, a light-emitting component 05 is disposed within the pixel opening corresponding to the first pixel definition layer 07, and the light-emitting component 05 is located on the side of the first pixel electrode layer 02 away from the substrate 01. The first pixel electrode layer 02 has a protrusion 0201 in the edge region near the first pixel definition layer 07, and the protrusion 0201 is located on the side of the first pixel electrode layer 02 away from the substrate 01. Referring to FIG6, the light-emitting component 05 includes a first light-emitting layer 051, a second light-emitting layer 053 on one side of the first light-emitting layer 051 and away from the substrate, and a connecting layer 052 between the first light-emitting layer and the second light-emitting layer. The first pixel definition layer 07 has an inverted trapezoidal undercut structure near the edge of the pixel opening, and the distance between the farthest edge and the nearest edge of the undercut structure from the center of the pixel opening projected onto the substrate 01 is less than the distance between the edge of the protrusion 0201 near the center of the pixel opening and the nearest edge projected onto the substrate 01.

[0037] In some embodiments, referring to FIG9, the distance d2 between the farthest edge and the nearest edge of the undercut structure from the center of the pixel opening projected onto the substrate is less than the distance d1 between the edge of the protrusion 0201 near the center of the pixel opening and the nearest edge projected onto the substrate, i.e., d1>d2 in FIG9. In some embodiments, the distance d2 between the farthest edge and the nearest edge of the undercut structure from the center of the pixel opening projected onto the substrate is 0.05um, i.e., the width d2 of the orthogonal projection of the undercut structure onto the substrate is 0.05um. Considering that in the current undercut structure of the pixel definition layer, the width of the footing area is generally 0.1-0.15um, therefore, in some embodiments, the distance between the edge of the protrusion 0201 near the center of the pixel opening and the nearest edge projected onto the substrate is 0.1-0.15um, i.e., the distance d1 between the edge of the protrusion 0201 near the center of the first pixel electrode layer 02 and the outer edge of the pixel opening of the pixel definition layer is 0.1-0.15um.

[0038] In one exemplary embodiment, the substrate in this embodiment can be a silicon-based material, that is, the OLED display panel in this embodiment is a silicon-based OLED display panel. Silicon-based OLED microdisplays use monocrystalline silicon as a substrate and integrate CMOS driving circuitry, representing a microdisplay technology that combines semiconductors and OLEDs. Silicon-based OLEDs place pixels directly on a silicon wafer, allowing for smaller pixel sizes and higher pixel densities. Therefore, one of the advantages of silicon-based OLEDs in the microdisplay field is achieving extremely high pixel densities with extremely small physical dimensions, i.e., achieving ultra-high PPI (resolution).

[0039] In an exemplary embodiment, the first pixel electrode layer 02 mainly refers to the pixel electrode layer close to the substrate. Referring to FIG3, the first pixel electrode layer 02 can be electrically connected to the substrate 01 through the conductive component 011. In an exemplary embodiment, the pixel electrode layer 02 is generally an anode layer, and in some embodiments, the pixel electrode 02 may also be a cathode layer. The first light-emitting layer 051 and the second light-emitting layer 053 mainly refer to light-emitting layers of different colors. For example, in some embodiments, the first light-emitting layer 051 may be a red-green light-emitting layer, and the second light-emitting layer 053 may be a blue light-emitting layer. The first light-emitting layer 051 and the second light-emitting layer 053 together form an RGB light-emitting layer. In some embodiments, referring to FIG12, the first pixel electrode layer 02 includes a conductive via. The conductive component 011 is connected to the first pixel electrode layer 02 through the conductive via. The conductive via is projected onto the substrate in the orthographic projection of the protrusion 0201 onto the substrate, thereby moving the conductive via to the area corresponding to the protrusion 0201 of the first pixel electrode layer 02, improving the flatness of the pixel opening area.

[0040] Referring to Figure 4, in this embodiment, a protrusion 0201 is provided on the side of the first pixel electrode layer 02 away from the substrate, replacing the footing area previously provided on the pixel definition layer. Compared with directly providing the footing area on the pixel definition layer, the protrusion 0201 not only increases the coverage area of ​​the pixel electrode in the footing area, but also, from a manufacturing process perspective, the taper angle of the footing undercut structure can be adjusted through etching to reduce distortion of the light-emitting device. Currently, an inverted trapezoidal undercut structure is directly etched on the pixel definition layer, and a footing area is provided at the edge of the pixel definition layer. However, since the pixel definition layer is relatively thick, generally around 900 Å (i.e., 90 nm), the slope of the footing area formed by etching is relatively large, resulting in downward (towards the substrate) distortion of the pixel electrode on the side of the light-emitting component away from the substrate, ultimately affecting the normal activation and emission of the light-emitting component. In this embodiment, a protrusion 0201 is formed directly on the first pixel electrode layer 02. Compared with forming a footing area directly on the pixel definition layer, the slope of the protrusion 0201 can be made gentler. Therefore, by using the protrusion 0201 to replace the footing area of ​​the pixel definition layer, the downward distortion generated by the electrode on the side of the light-emitting component away from the substrate can be effectively reduced.

[0041] Referring to Figure 5, in the OLED display panel of this embodiment, since the protrusion 0201 on the first pixel electrode layer 02 replaces the footing area formed by the previous pixel definition layer, the coverage area of ​​the pixel electrode is increased, and the downward distortion of the pixel electrode on the side of the light-emitting component away from the substrate is reduced. Therefore, at voltages below 4.8V, the OLED device leaks pure current through the isolation area and does not emit light, as shown by the arrow path in circuit a of Figure 5; at voltages of 4.8 to 5.2V, since the pixel electrode structure covers the original footing area, current can pass through paths R1 and R2, as shown by the arrow path in circuit b of Figure 5. In this way, in the low gray stage, both the upper and lower light-emitting layers of the footing can be acted on simultaneously, which can improve the problem of abnormal lighting of the upper light-emitting layer and increase the light-emitting aperture ratio. At voltages of 5.2 to 7V, the upper and lower light-emitting layers on the footing area and the lower light-emitting layer of the AA area emit light; at 7V, the RGB of the AA area is normally lit, that is, the upper and lower light-emitting layers are lit simultaneously, and there is no blue light above the footing area.

[0042] Considering that the thickness of the etched portion affects the tilt angle of the etched edge during the etching process, in some embodiments, referring to FIG4, the thickness of the protrusion 0201 is less than the thickness of the first pixel definition layer 07, thereby further ensuring that the slope of the protrusion 0201 on the first pixel electrode layer 02 is gentler. In some embodiments, the thickness of the protrusion 0201 is 100 Å, and the thickness of the first pixel electrode layer 02 is 800 Å.

[0043] To further reduce the slope of the protrusion 0201, in some embodiments, referring to FIG10, the edge of the protrusion near the center of the first pixel electrode layer 02 is stepped.

[0044] In some embodiments, referring to FIG8, the OLED display panel further includes a second pixel definition layer 08 located between the first pixel electrode layer 02 and the substrate 01; the orthographic projection of the protrusion 0201 on the substrate 01 lies within the orthographic projection of the second pixel definition layer 08 on the substrate 01, and the orthographic projection of the edge of the protrusion 0201 near the center of the first pixel electrode layer 02 on the substrate 01 coincides with the orthographic projection of the edge of the second pixel definition layer 08 on the substrate 01. In some embodiments, the distance between the projection of the edge of the second pixel definition layer 08 near the center of the first pixel electrode layer 02 and the pixel opening edge of the pixel definition layer on the substrate is 0.1-0.15 μm.

[0045] In an exemplary embodiment, when forming the first pixel electrode layer 02, a second pixel definition layer 08 can be deposited on the substrate first, and patterned using an exposure, development, and etching process. At this point, the undercut structure does not need to be considered; the tapered angle of the undercut structure in the footing area can be adjusted through the etching process to reduce distortion of the light-emitting component. Then, the first pixel electrode layer 02 is deposited on the substrate where the second pixel definition layer 08 has been deposited. At this point, as long as the thickness of the deposited first pixel electrode layer 02 is uniform, a protrusion 0201 can be formed at the edge of the first pixel electrode layer 02. Referring to Figure 9, since the thickness of the second pixel definition layer directly deposited on the substrate is controllable, a gentler slope can be achieved in the second pixel definition layer 08 formed on the substrate. Correspondingly, the slope of the protrusion 0201 formed on the second pixel definition layer 08 is also gentler. In Figure 9, the first pixel electrode layer 02 includes a first electrode layer 021 and a second electrode layer 022. The first electrode layer 021 is made of a Ti / Al / Ti triplet structure (TAT), and the second electrode layer 022 is made of indium tin oxide (ITO). In some embodiments, referring to Figure 8, the protrusion 0201 is parallel to the second pixel definition layer 08, meaning that the thickness of each region of the first pixel definition layer 07 remains uniform. In some embodiments, the tilt angle of the edge of the second pixel definition layer 08 near the center of the first pixel electrode layer 02 relative to the substrate is less than or equal to 40 degrees, while currently, the tilt angle of the foot region formed directly through the pixel definition layer relative to the pixel electrode layer is greater than 70 degrees.

[0046] In some embodiments, the edge slope of the protrusion 0201 near the center of the first pixel electrode layer 02 is less than the edge slope of the second pixel definition layer 08 near the center of the first pixel electrode layer 02. That is, the tilt angle of the protrusion 0201 relative to the substrate is less than the tilt angle of the second pixel definition layer 08 relative to the substrate, thereby better reducing the downward distortion generated by the electrode on the side of the light-emitting component away from the substrate.

[0047] In some embodiments, the distance d1 between the edge of the protrusion 0201 near the center of the pixel opening and the nearest edge projected onto the substrate is greater than the distance d3 between the edge of the second pixel definition layer 08 near the center of the pixel opening and the nearest edge projected onto the substrate, i.e., d1>d3 in FIG9. This can further ensure that the slope of the edge of the protrusion 0201 near the center of the pixel opening is gentler than the slope of the edge of the second pixel definition layer 08 near the center of the pixel opening, further reducing the downward distortion generated by the electrode on the side of the light-emitting component away from the substrate.

[0048] In some embodiments, referring to FIG9, the distance d4 between the edge of the protrusion 0201 furthest from the center of the pixel opening and the farthest edge projected onto the substrate is less than the distance d3 between the edge of the second pixel definition layer 08 closest to the center of the pixel opening and the nearest edge projected onto the substrate. That is, d3 > d4 in FIG9.

[0049] In order to better control the protrusion 0201 to replace the footing area previously formed by the pixel definition layer, in some embodiments, referring to FIG8, the orthographic projection of the first pixel definition layer 07 on the substrate 01 completely falls within the orthographic projection of the second pixel definition layer 08 on the substrate 01; the orthographic projection of the protrusion 0201 of the first pixel electrode layer 02 on the substrate coincides with the orthographic projection of the edge region of the second pixel definition layer 08 on the substrate 01, and the protrusion 0201 and the edge region are parallel to each other.

[0050] In some embodiments, the thickness of the second pixel definition layer 08 is less than the thickness of the first pixel definition layer 07. In some embodiments, the thickness of the second pixel definition layer 08 is less than half the thickness of the first pixel definition layer 07. In some embodiments, the thickness of the second pixel definition layer 08 is less than or equal to one-eighth the thickness of the first pixel definition layer 07. In some embodiments, the thickness of the second pixel definition layer 08 is 100 Å, and the thickness of the first pixel definition layer 07 is 800 Å. In some embodiments, the first pixel definition layer 07 comprises two layers, one layer relatively far from the substrate being made of silicon nitride, and the other layer relatively close to the substrate being made of silicon oxide, wherein the thickness of the silicon nitride is generally 200 Å, and the thickness of the silicon oxide is 600 Å, and the second pixel definition layer 08 is made of silicon oxide.

[0051] In one exemplary embodiment, the current pixel definition layer generally includes three ONO layers, namely two silicon oxide layers with a silicon nitride layer in between, and the thicknesses of the three ONO layers are 200 Å, 600 Å, and 100 Å, respectively. However, in the structure of the embodiments disclosed herein, the pixel definition layer includes a first pixel definition layer 07 and a second pixel definition layer 08. The first pixel definition layer 07 generally includes one silicon oxide layer and one silicon nitride layer, and therefore its thickness is generally 800 Å, while the second pixel definition layer 08 only includes one silicon oxide layer, and therefore its thickness is generally 100 Å.

[0052] To further reduce the slope of the protrusion 0201, in some embodiments, referring to FIG10, the edge of the second pixel definition layer 08 near the center of the first pixel electrode layer 02 is stepped. Based on this, when depositing the first pixel electrode layer 02, the edge of the protrusion 0201 can also be stepped.

[0053] In some embodiments, referring to FIG10 and FIG11, the second pixel definition layer 08 includes a first definition layer 081 and a second definition layer 082 disposed on the side of the first definition layer 081 away from the substrate 01; the area of ​​the orthographic projection of the second definition layer 081 on the substrate 01 is smaller than the area of ​​the orthographic projection of the first definition layer 082 on the substrate 01, and the orthographic projection of the second definition layer 081 on the substrate is located within the orthographic projection of the first definition layer on the substrate.

[0054] In some embodiments, referring to Figures 3 and 7, the OLED display panel further includes a second electrode layer 06; the second electrode layer 06 is located on the side of the light-emitting component 05 away from the substrate 01, and the electrodes of the second electrode layer 06 are opposite to those of the first pixel electrode layer 02. In some embodiments, the first pixel electrode layer 02 is an anode, the second electrode layer is a cathode, and the material of the second electrode layer is indium zinc oxide (IZO).

[0055] In some embodiments, referring to FIG3, there are multiple first pixel electrode layers 02, and a planarization layer 03 is disposed between adjacent first pixel electrodes 02; the planarization layer 03 is located on the side of the second pixel definition layer 08 away from the substrate 01. In some embodiments, the planarization layer is made of silicon oxide (SiOx) to reduce pixel electrode breakage.

[0056] In some embodiments, the distance d1 between the edge of the protrusion 0201 near the center of the pixel opening and the nearest edge projected onto the substrate is less than the distance d5 between the adjacent first pixel electrode layer 02 projected onto the substrate. Referring to Figures 8 and 9, d5 > d1. In some embodiments, the distance between two adjacent first pixel electrode layers 02 is 0.3-0.5 μm, and the width of the footing area formed by the protrusion 0201 replacing the pixel definition layer is 0.1-0.15 μm.

[0057] In some embodiments, referring to FIG10 and FIG11, the second pixel definition layer 08 includes a first definition layer 081 and a second definition layer 082 disposed on the side of the first definition layer away from the substrate; the distance between the edge of the second definition layer 082 near the center of the first pixel electrode layer 02 and the center of the first pixel electrode layer 02 is greater than the distance between the edge of the first definition layer 081 near the center of the first pixel electrode layer 02 and the center of the first pixel electrode layer 02.

[0058] Considering that in the Tandem OLED structure, the upper and lower light-emitting layers are arranged parallel to each other along the direction perpendicular to the substrate, and the upper light-emitting layer may be more easily activated by a low-order voltage in the distortion region, in some embodiments, the area of ​​the orthogonal projection of the second light-emitting layer 053 on the substrate is smaller than the area of ​​the orthogonal projection of the first light-emitting layer 051 on the substrate. That is, by reducing the area of ​​the upper light-emitting layer in the distortion region, unnecessary blue light is avoided from being generated by the OLED display panel.

[0059] The OLED display panel disclosed herein includes a substrate, and a first pixel electrode layer and a first pixel definition layer sequentially disposed on one side of the substrate. A light-emitting component is disposed within a pixel opening corresponding to the first pixel definition layer. The light-emitting component includes a first light-emitting layer, a second light-emitting layer on one side of the first light-emitting layer and away from the substrate, and a connecting layer between the first and second light-emitting layers. The light-emitting component is located on the side of the first pixel electrode layer away from the substrate. A protrusion is disposed on the edge region of the first pixel electrode layer near the first pixel definition layer. This protrusion replaces the original footing area of ​​the pixel definition layer with the protrusion of the first pixel electrode layer, effectively covering the footing area. This improves the problem of the upper light-emitting layer in the footing distortion area being illuminated independently and increases the light-emitting aperture ratio of the OLED display panel. Experimental verification shows that the structure of this embodiment can increase the light-emitting aperture ratio by 2%-3%. Furthermore, in this embodiment, the taper angle of the footing undercut structure can be adjusted through etching processes to reduce distortion of the light-emitting device.

[0060] This disclosure also provides a display device, which includes an OLED display panel from any of the above embodiments. The display device can be a mobile phone, television, tablet computer, monitor, VR device, or other device with display functionality.

[0061] The apparatus of the above embodiments is used to implement the function of the corresponding OLED display panel in any of the foregoing embodiments, and has the beneficial effects of the corresponding OLED display panel embodiments, which will not be repeated here.

[0062] This disclosure also provides a method for fabricating an OLED display panel. Referring to Figure 13, the method includes the following steps:

[0063] S101, Preparing the substrate.

[0064] In one exemplary embodiment, the substrate prepared in this step may be a CMOS driving circuit substrate with a single crystal silicon substrate.

[0065] S102, a first pixel electrode layer and a first pixel definition layer are sequentially formed on one side of the substrate.

[0066] In this embodiment, a light-emitting component is disposed within the pixel opening corresponding to the second pixel definition layer. The light-emitting component includes a first light-emitting layer, a second light-emitting layer on one side of the first light-emitting layer and away from the substrate, and a connecting layer between the first light-emitting layer and the second light-emitting layer. The light-emitting component is located on the side of the first pixel electrode layer away from the substrate. A protrusion is disposed on the edge region of the first pixel electrode layer near the first pixel definition layer. The protrusion is located on the side of the first pixel electrode layer away from the substrate. An undercut structure is disposed on the edge of the first pixel definition layer near the pixel opening. The distance between the farthest edge and the nearest edge of the undercut structure from the center of the pixel opening projected onto the substrate is less than the distance between the edge of the protrusion near the center of the pixel opening and the nearest edge projected onto the substrate.

[0067] In one exemplary embodiment, in this step, after the substrate is fabricated, a first pixel electrode layer and a first pixel definition layer are sequentially formed on one side of the substrate. The first pixel electrode layer may be an anode pixel electrode layer.

[0068] The preparation methods described above are used to realize the structure of the corresponding OLED display panel in any of the foregoing embodiments, and have the beneficial effects of the corresponding OLED display panel embodiments, which will not be repeated here.

[0069] In summary, the OLED display panel, its manufacturing method, and display device disclosed herein include a substrate and a first pixel electrode layer and a first pixel definition layer sequentially disposed on one side of the substrate. A light-emitting component is disposed within a pixel opening corresponding to the first pixel definition layer. The light-emitting component includes a first light-emitting layer, a second light-emitting layer on one side of the first light-emitting layer and away from the substrate, and a connecting layer between the first and second light-emitting layers. The light-emitting component is located on the side of the first pixel electrode layer away from the substrate. A protrusion is disposed on the edge region near the first pixel definition layer. The part is located on the side of the first pixel electrode layer away from the substrate; the first pixel definition layer has an undercut structure at the edge near the pixel opening. The distance between the farthest edge and the nearest edge of the undercut structure from the center of the pixel opening and the projection on the substrate is smaller than the distance between the edge of the protrusion near the center of the pixel opening and the nearest edge of the protrusion on the substrate. Thus, the protrusion of the first pixel electrode layer replaces the original footing area of ​​the pixel definition layer, that is, the pixel electrode layer covers the footing area, which improves the problem of the upper light-emitting layer of the footing distortion area being lit alone, and increases the light-emitting aperture ratio of the OLED display panel.

[0070] In one exemplary embodiment, some embodiments of this disclosure have been described above. Other embodiments are within the scope of the appended claims. In some cases, the actions or steps recited in the claims may be performed in a different order than those shown in the above embodiments and may still achieve the desired result. Furthermore, the processes depicted in the drawings do not necessarily require the specific or sequential order shown to achieve the desired result. In some embodiments, multitasking and parallel processing are possible or may be advantageous.

[0071] For those skilled in the art, the discussion of any of the above embodiments is merely exemplary and is not intended to imply that the scope of this disclosure (including the claims) is limited to these examples; within the framework of this disclosure, the technical features of the above embodiments or different embodiments can also be combined, the steps can be implemented in any order, and there are many other variations of the different aspects of the embodiments of this disclosure as described above, which are not provided in detail for the sake of brevity.

[0072] Additionally, to simplify the description and discussion, and to avoid obscuring the embodiments of this disclosure, the provided drawings may or may not show well-known power / ground connections to integrated circuit (IC) chips and other components. Furthermore, the apparatus may be shown in block diagram form to avoid obscuring the embodiments of this disclosure, and this also takes into account the fact that the details of implementation of these block diagram apparatuses are highly dependent on the platform on which the embodiments of this disclosure will be implemented (i.e., these details should be fully understood by those skilled in the art). While details (e.g., circuits) have been set forth to describe exemplary embodiments of this disclosure, it will be apparent to those skilled in the art that the embodiments of this disclosure can be implemented without these details or with variations thereof. Therefore, these descriptions should be considered illustrative rather than restrictive.

[0073] This disclosure is intended to cover all such substitutions, modifications, and variations that fall within the broad scope of the appended claims. Therefore, any omissions, modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this disclosure should be included within the scope of protection of this disclosure.

Claims

1. An OLED display panel, comprising: A substrate, and a first pixel electrode layer and a first pixel definition layer sequentially disposed on one side of the substrate; In this embodiment, a light-emitting component is disposed within the pixel opening corresponding to the first pixel definition layer. The light-emitting component includes a first light-emitting layer, a first light-emitting layer on one side of the first light-emitting layer and away from the substrate, and a connecting layer between the first light-emitting layer and the second light-emitting layer. The light-emitting component is located on the side of the first pixel electrode layer away from the substrate. A protrusion is disposed on the edge region of the first pixel electrode layer near the first pixel definition layer. The protrusion is located on the side of the first pixel electrode layer away from the substrate. An undercut structure is disposed on the edge of the first pixel definition layer near the pixel opening. The distance between the farthest edge and the nearest edge of the undercut structure from the center of the pixel opening projected onto the substrate is less than the distance between the edge of the protrusion near the center of the pixel opening and the nearest edge projected onto the substrate. 2.The OLED display panel of claim 1, wherein, The thickness of the protrusion is less than the thickness of the first pixel definition layer. 3.The OLED display panel of claim 1, wherein, The protrusion has a stepped edge near the center of the first pixel electrode layer.

4. The OLED display panel according to claim 1 further includes a second pixel definition layer located between the first pixel electrode layer and the substrate; the orthographic projection of the protrusion on the substrate is located within the orthographic projection of the second pixel definition layer on the substrate, and the orthographic projection of the edge of the protrusion near the center of the first pixel electrode layer on the substrate coincides with the orthographic projection of the edge of the second pixel definition layer on the substrate.

5. The OLED display panel of claim 4, wherein, The protrusion is parallel to the second pixel definition layer. 6.The OLED display panel of claim 4, wherein, The thickness of the second pixel definition layer is less than the thickness of the first pixel definition layer.

7. The OLED display panel of claim 4, wherein, The edge of the second pixel definition layer near the center of the first pixel electrode layer is stepped.

8. The OLED display panel of claim 7, wherein, The second pixel definition layer includes a first definition layer and a second definition layer disposed on the side of the first definition layer away from the substrate; Wherein, the area of ​​the orthographic projection of the second defining layer on the substrate is smaller than the area of ​​the orthographic projection of the first defining layer on the substrate, and the orthographic projection of the second defining layer on the substrate is located within the orthographic projection of the first defining layer on the substrate.

9. The OLED display panel of claim 4, wherein, The distance between the edge of the protrusion near the center of the pixel opening and the nearest edge projected onto the substrate is greater than the distance between the edge of the second pixel definition layer near the center of the pixel opening and the nearest edge projected onto the substrate.

10. The OLED display panel according to claim 4, wherein, The distance between the edge of the protrusion furthest from the center of the pixel opening and the farthest edge projected onto the substrate is less than the distance between the edge of the second pixel definition layer closest to the center of the pixel opening and the nearest edge projected onto the substrate.

11. The OLED display panel according to claim 4, wherein, The slope of the edge of the protrusion near the center of the first pixel electrode layer is less than the slope of the edge of the second pixel definition layer near the center of the first pixel electrode layer.

12. The OLED display panel according to claim 1, further comprising a second electrode layer; the second electrode layer is located on the side of the light-emitting component away from the substrate, and the electrodes of the second electrode layer are opposite to those of the first pixel electrode layer.

13. The OLED display panel according to claim 4, wherein, The first pixel electrode layer includes multiple layers, and a planarization layer is disposed between adjacent first pixel electrodes; the planarization layer is located on the side of the second pixel definition layer away from the substrate.

14. The OLED display panel according to claim 13, wherein, The distance between the edge of the protrusion near the center of the pixel opening and the nearest edge projected onto the substrate is less than the distance between the adjacent first pixel electrode projected onto the substrate.

15. The OLED display panel according to claim 1, wherein, The first pixel electrode layer includes a conductive via, and the orthographic projection of the conductive via on the substrate is located within the orthographic projection of the protrusion on the substrate.

16. The OLED display panel according to claim 1, wherein the distance between the farthest edge and the nearest edge of the undercut structure from the center of the pixel opening projected onto the substrate is 0.05 μm.

17. The OLED display panel according to claim 1, wherein the distance between the edge of the protrusion near the center of the pixel opening and the nearest edge projected onto the substrate is 0.1-0.15 μm.

18. A display device, comprising: The OLED display panel as described in any one of claims 1-17.

19. A method for manufacturing an OLED display panel, comprising: Preparing a substrate; A first pixel electrode layer and a first pixel definition layer are sequentially formed on one side of the substrate; In this embodiment, a light-emitting component is disposed within the pixel opening corresponding to the second pixel definition layer. The light-emitting component includes a first light-emitting layer, a second light-emitting layer on one side of the first light-emitting layer and away from the substrate, and a connecting layer between the first light-emitting layer and the second light-emitting layer. The light-emitting component is located on the side of the first pixel electrode layer away from the substrate. A protrusion is disposed on the edge region of the first pixel electrode layer near the first pixel definition layer. The protrusion is located on the side of the first pixel electrode layer away from the substrate. An undercut structure is disposed on the edge of the first pixel definition layer near the pixel opening. The distance between the farthest edge and the nearest edge of the undercut structure from the center of the pixel opening projected onto the substrate is less than the distance between the edge of the protrusion near the center of the pixel opening and the nearest edge projected onto the substrate.

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