Electronic device, and semiconductor device and manufacturing method therefor

Abstract

Embodiments of the present application relate to the technical field of semiconductors, and disclose an electronic device, and a semiconductor device and a manufacturing method therefor, used for solving the problem that a radio frequency signal easily leaks to the control end of a heater when a phase change switch of a glass substrate is turned off. The semiconductor device comprises a glass substrate having a first surface and a second surface that are opposite to each other, a phase change switch module, and a spiral inductor. The phase change switch module comprises a heater and a phase change switch that are sequentially stacked on the first surface. The spiral inductor comprises a plurality of through glass vias (TGVs), a plurality of first metal interconnection lines that are distributed at intervals on the first surface, and at least one second metal interconnection line on the second surface. The plurality of first metal interconnection lines and a plurality of second metal interconnection lines are staggered to connect two adjacent TGVs among the plurality of TGVs. One first metal interconnection line connects a TGV located at one side end to the heater, and another first metal interconnection line is used for connecting a TGV located at the other side end to a heating control circuit.

Description

Electronic device, semiconductor device and manufacturing method thereof

[0001] The present application claims priority to the Chinese patent application No. 202410702634.5, filed on May 31, 2024, entitled "Electronic device, semiconductor device and manufacturing method thereof", the content of which is incorporated herein by reference in its entirety. TECHNICAL FIELD

[0002] The present application relates to the technical field of semiconductor, in particular to an electronic device, a semiconductor device and a manufacturing method thereof. BACKGROUND

[0003] The phase change material (PCM) has the thermal phase change characteristic, and can realize the rapid conversion between the low-resistance crystalline state and the high-resistance amorphous state. At the same time, it can also maintain the electrical performance stability for nearly 10 years at room temperature. Therefore, the phase change material is widely used in phase change memory, non-volatile device and radio frequency switch, etc.

[0004] The phase change radio frequency switch uses a high thermal conductivity silicon substrate or silicon carbide SiC substrate, which can meet the phase change from crystalline state to amorphous state of the phase change material. That is, the phase change radio frequency switch needs the phase change material to realize the rapid cooling from the melting point (720℃) of the phase change material within a few hundred nanoseconds. However, the phase change radio frequency switch using the silicon substrate has the problems of poor harmonic performance, leakage, high nonlinearity and low Q value of integrated passive devices. The phase change radio frequency switch using the glass substrate can solve the above problems. However, when the phase change radio frequency switch using the glass substrate is turned off, the radio frequency signal is easy to leak to the control end of the heater. SUMMARY

[0005] The present application provides an electronic device, a semiconductor device and a manufacturing method thereof, which solves the problem that the radio frequency signal is easy to leak to the control end of the heater when the phase change switch using the existing glass substrate is turned off.

[0006] To achieve the above object, the present application adopts the following technical scheme:

[0007] In a first aspect, embodiments of the present application provide a semiconductor device, which can be a chip. The semiconductor device includes a glass substrate, a phase change switch module, and a spiral inductor. The glass substrate has a first surface and a second surface, and the first surface is opposite to the second surface. The phase change switch module includes a heater and a phase change switch, and the heater and the phase change switch are sequentially stacked on the first surface. The spiral inductor includes a plurality of through glass vias (TGVs), a plurality of first metal interconnection lines, and at least one second metal interconnection line. The plurality of TGVs all penetrate the glass substrate. The plurality of TGVs are spaced apart along a first direction. The plurality of first metal interconnection lines are formed on the first surface and are spaced apart. The second metal interconnection line is formed on the second surface. The projection of the second metal interconnection line on the first surface is located between any two adjacent first metal interconnection lines. The plurality of first metal interconnection lines and the second metal interconnection line connect any two adjacent TGVs. That is, the spiral inductor has a 3D structure. One first metal interconnection line connects a TGV at one end of the spiral inductor to the heater, and another first metal interconnection line connects another TGV at the other end of the spiral inductor to a heating control circuit. Therefore, the spiral inductor integrated with the TGVs has a high quality factor (Q value). As an example, the phase change switch is used as a radio frequency (RF) switch, and the spiral inductor is connected in series between the heater and the heating control circuit in the phase change switch module, which can reduce the leakage of the RF power signal to the heating control end. Thus, the off-isolation of the RF switch is improved. The semiconductor device of the embodiments of the present application can effectively reduce RF leakage and nonlinearity. The spiral inductor with a 3D structure is also conducive to the miniaturization, integration, and reconfigurability of the chip.

[0008] Based on this, in some embodiments of the present application, the semiconductor device includes two spiral inductors, and the two spiral inductors respectively connect two ends of the heater to two interfaces of the heating control circuit. The two spiral inductors are connected in series at the two control ends of the heating control circuit, which can further improve the off-isolation of the RF switch.

[0009] In some embodiments of the present application, the phase change switch module further comprises a heat dissipation layer and an insulating layer. The heat dissipation layer covers part of the first surface of the glass substrate. The insulating layer is arranged between the heat dissipation layer and the phase change switch. In addition, the side surface of the insulating layer away from the heat dissipation layer is formed with a groove, and the heater is arranged in the groove. The insulating medium layer can avoid the generation of parasitic surface conductance (PSC) effect between the upper heater and the heat dissipation layer. The thermal conductivity of the heat dissipation layer is greater than or equal to 35 W / (m·k). The heat dissipation layer has a high thermal conductivity, which improves the temperature drop rate of the phase change switch and the heater to meet the amorphous quenching rate requirement of the phase change material in the phase change switch. Thus, the problem that the phase change switch cannot be turned off on the glass substrate is solved.

[0010] It should be noted that the material of the insulating layer includes one or both of silicon nitride and silicon dioxide SiO2, which is not limited in the present application. In some embodiments of the present application, the material of the insulating layer is silicon dioxide SiO2.

[0011] The material of the heat dissipation layer includes any one or any combination of aluminum nitride AlN, diamond and sapphire, which all have high thermal conductivity. In addition, the heat dissipation layer can be made by a thin film deposition process. For example, the heat dissipation layer can be formed on the first surface of the glass substrate by a physical vapor deposition process.

[0012] Based on the requirements of the heat dissipation layer, in some embodiments of the present application, the material of the heat dissipation layer is an aluminum nitride AlN thin film, which not only has a high thermal conductivity, but also has a mature large-area thin film growth capability. Compared with using a whole piece of aluminum nitride AlN, diamond or sapphire as the heat dissipation layer, using the physical vapor deposition method to make the aluminum nitride AlN thin film can reduce the design cost. At the same time, the aluminum nitride AlN thin film heat dissipation layer is also compatible with the 400℃ temperature limit of the complementary metal oxide semiconductor (CMOS) process in the back end of line (BEOL).

[0013] In addition, the thickness of the heat dissipation layer is 2-5um, which can ensure the heat dissipation speed of the heater. The thickness of the heat dissipation layer is small, and the cost is low.

[0014] It should be noted that the phase change switch in the semiconductor device of the present application can be a radio frequency switch, but also can be a transceiver switching switch, which is not limited in the present application.

[0015] For example, in some embodiments of this application, the phase change switch includes a thermally conductive layer and a phase change material layer. The thermally conductive layer covers the heater. The phase change material layer is stacked on the side of the thermally conductive layer away from the heater. The thermally conductive layer ensures efficient heat transfer from the heater to the phase change material layer. If the phase change switch is a radio frequency (RF) switch, it also includes RF electrodes that cover the phase change material layer for connection to an RF circuit.

[0016] Furthermore, the thermally conductive layer can be made of aluminum nitride (AlN), aluminum oxide (Al2O3), or beryllium oxide (Be). x O y Materials with high thermal conductivity, such as silicon carbide (SiC), diamond, or diamond-like carbon, are used as electrical insulating materials. Therefore, the thermally conductive layer also serves as electrical insulation between the heater and the phase change material layer, as well as the radio frequency electrodes.

[0017] The materials of the aforementioned phase change material layer include germanium-antimony-tellurium compound Ge2Sb2Te5, antimony tritelluride Sb2Te3, antimony telluride Sb2Te, and germanium-antimony compound Ge2Sb2Te5. x Sb 1-x Phase change materials include germanium-antimony-tellurium compounds such as GeSb₂Te₄, titanium-antimony-tellurium compounds such as Ti-Sb₂Te₃, indium-antimony-tellurium compounds such as In-Sb₂Te₃, indium-germanium-tellurium compounds such as In-Ge₂Sb₂Te₅, and germanium telluride GeTe. In some embodiments of this application, the material of the aforementioned phase change material layer is germanium telluride GeTe. Crystalline germanium telluride GeTe films have low resistivity at room temperature and exhibit metal-like properties. Amorphous germanium telluride GeTe films have extremely high resistivity at room temperature, with an impedance ratio reaching 10. 5 Therefore, this phase change switch has high isolation in the off state and low insertion loss in the on state.

[0018] In addition to the spiral inductor described above, the integrated passive devices (IPDs) in the semiconductor devices of this application embodiment may also include a capacitor disposed on the first surface of the glass substrate in some embodiments of this application. Furthermore, the capacitor can be connected to the phase-change switch described above. This enables the construction of circuit designs such as bridge circuits and phase-shifting topologies, allowing for the realization of more complex circuit functions.

[0019] Furthermore, in some embodiments of this application, the capacitor includes a first electrode plate, a dielectric layer, and a second electrode plate. The first electrode plate, the dielectric layer, and the second electrode plate are stacked sequentially. The dielectric layer is made of the same material as the insulating layer, and both can be fabricated using the same patterning process, thereby reducing process complexity.

[0020] In addition, in some embodiments of the present application, the semiconductor device further comprises a resistor, which is disposed on the first surface of the glass substrate. Moreover, the resistor can be connected with the phase change switch. Similarly, circuit designs such as a bridge, a phase-shift topology, etc. can be constructed to achieve more complex circuit functions.

[0021] In a second aspect, the embodiments of the present application further include a manufacturing method of the semiconductor device. The manufacturing method of the semiconductor device comprises the following steps: forming a plurality of through-glass vias (TGVs) in a glass substrate. Then, forming a heater and a plurality of first metal interconnection lines on a first surface of the glass substrate. Subsequently, forming a phase change switch on the heater. Finally, forming at least one second metal interconnection line on a second surface of the glass substrate. The projection of the second metal interconnection line on the first surface is located between two adjacent first metal interconnection lines. The plurality of first metal interconnection lines and the second metal interconnection line are staggered to connect two adjacent TGVs in the plurality of TGVs. One first metal interconnection line connects a TGV at one end of the glass substrate with the heater, and another first metal interconnection line connects a TGV at the other end of the glass substrate with a heating control circuit. Therefore, the manufacturing method of the semiconductor device of the embodiments of the present application can manufacture the semiconductor device described in the above embodiments.

[0022] Based on the above method, in some embodiments of the present application, between the step of forming a plurality of through-glass vias (TGVs) in a glass substrate and the step of forming a heater and a plurality of first metal interconnection lines on a first surface of the glass substrate, the manufacturing method of the semiconductor device further comprises: forming a heat dissipation layer on a partial region of the first surface of the glass substrate. Then, forming an insulating layer on the heat dissipation layer.

[0023] Moreover, in some embodiments of the present application, the step of forming a heater on the first surface of the glass substrate specifically comprises: forming a groove on a side surface of the insulating layer away from the heat dissipation layer. Then, forming the heater in the groove.

[0024] In some embodiments of the present application, the step of forming a phase change switch on the heater specifically comprises: forming a heat-conducting layer on the heater. Forming a phase change material layer on the heat-conducting layer. Forming a radio frequency electrode on the insulating layer, the heat-conducting layer, and the phase change material layer to obtain the phase change switch.

[0025] In a third aspect, the embodiments of the present application further include an electronic device comprising a circuit board and the semiconductor device described in the above embodiments. Since the semiconductor device in the electronic device of the embodiments of the present application has the same structure as the semiconductor device described in the above embodiments, both can solve the same technical problems and obtain the same technical effects, which will not be described here. BRIEF DESCRIPTION OF DRAWINGS

[0026] In order to illustrate the technical solutions of the embodiments of the present application, the drawings needed to be used in the embodiments of the present application will be described below.

[0027] FIG. 1 is a structural schematic diagram of a switch according to an embodiment of the present application;

[0028] FIG. 2 is a cross-sectional schematic diagram of a semiconductor device according to an embodiment of the present application;

[0029] FIG. 3 is a top view schematic diagram of a semiconductor device according to an embodiment of the present application;

[0030] FIG. 4 is a cross-sectional schematic diagram of a through-glass via TGV in a semiconductor device according to an embodiment of the present application;

[0031] FIG. 5 is a cross-sectional schematic diagram of a through-glass via TGV and a first metal interconnect line in a semiconductor device according to an embodiment of the present application;

[0032] FIG. 6 is a top view schematic diagram of a spiral inductor in a semiconductor device according to an embodiment of the present application;

[0033] FIG. 7 is a cross-sectional schematic diagram of a heater and a phase change switch in a semiconductor device according to an embodiment of the present application;

[0034] FIG. 8 is a top view schematic diagram of a semiconductor device with a radio frequency electrode and a ground electrode according to an embodiment of the present application;

[0035] FIG. 9 is a cross-sectional schematic diagram of a semiconductor device with a heat dissipation layer and an insulating layer according to an embodiment of the present application;

[0036] FIG. 10 is a cross-sectional schematic diagram of a heater and an insulating layer in a semiconductor device according to an embodiment of the present application;

[0037] FIG. 11 is a top view schematic diagram of a semiconductor device with a heater electrode according to an embodiment of the present application;

[0038] FIG. 12 is a cross-sectional schematic diagram of a semiconductor device in the related art;

[0039] FIG. 13 is a simulation result diagram of a semiconductor device in the related art;

[0040] FIG. 14 is a simulation result diagram of a semiconductor device according to an embodiment of the present application;

[0041] FIG. 15 is a simulation result diagram of a semiconductor device according to an embodiment of the present application, in which different thicknesses of a heat dissipation layer are simulated;

[0042] FIG. 16 is a cross-sectional schematic diagram of a semiconductor device with a capacitor according to an embodiment of the present application;

[0043] FIG. 17 is a structural schematic diagram of a capacitor in a semiconductor device according to an embodiment of the present application;

[0044] FIG. 18 is a cross-sectional schematic diagram of a semiconductor device with a resistor according to an embodiment of the present application;

[0045] FIG. 19 is a schematic diagram of a structure of a resistor in a semiconductor device according to an embodiment of the present application;

[0046] FIG. 20 is an equivalent circuit diagram of a phase change switch in a semiconductor device according to the related art;

[0047] FIG. 21 is a schematic diagram of an equivalent circuit connection of a phase change switch and a spiral inductor in a semiconductor device according to an embodiment of the present application;

[0048] FIG. 22(a), (b), (c), (d), (e), (f), (g), (h), (i) are schematic diagrams of manufacturing processes of a semiconductor device according to an embodiment of the present application;

[0049] FIG. 23(a), (b), (c), (d) are schematic diagrams of processes of S200 in a manufacturing method of a semiconductor device according to an embodiment of the present application;

[0050] FIG. 24(a), (b), (c), (d), (e) are schematic diagrams of processes of S500 in a manufacturing method of a semiconductor device according to an embodiment of the present application;

[0051] FIG. 25(a), (b), (c), (d) are schematic diagrams of partial processes of a manufacturing method of a semiconductor device with a resistor and a capacitor according to an embodiment of the present application.

[0052] FIG. 25(a), (b), (c), (d) are schematic diagrams of partial processes of a manufacturing method of a semiconductor device with a resistor and a capacitor according to an embodiment of the present application. DETAILED DESCRIPTION

[0053] In order to make the purposes, technical solutions and advantages of the present application clearer, the present application will be further described in detail below with reference to the drawings.

[0054] Hereinafter, the terms "first", "second", and the like are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined with "first", "second", and the like can explicitly or implicitly include one or more of the features. In the description of the present application, unless otherwise stated, the meaning of "a plurality of" is two or more.

[0055] In addition, in the present application, the orientation terms such as "upper", "lower", "left", "right", "horizontal" and "vertical" are defined with respect to the orientation of the components shown in the drawings, and it should be understood that these directional terms are relative concepts, which are used for relative description and clarification, and can be changed accordingly according to the change of the orientation of the components placed in the drawings.

[0056] In the present application, unless otherwise explicitly specified and limited, the term "connection" should be understood broadly, for example, "connection" can mean mechanical connection, physical connection. It can be fixed connection, or detachable connection, or integral; it can be directly connected, or indirectly connected through intermediate media. It can also be understood as physical contact and electrical conduction of components, or as a form of connection between different components in the circuit structure through the entity circuit of PCB copper foil or wire that can transmit electrical signals.

[0057] The present application provides an electronic device, which can be a radio frequency distributor, a converter, a power amplifier, a transmission device (such as a router or a switch), etc. The present application does not limit the device.

[0058] Taking the switch 1000 shown in FIG. 1 as an example of the electronic device, the switch 1000 can include a housing and a circuit board assembly disposed in the housing. The circuit board assembly includes a main board and a plurality of semiconductor devices 100 disposed on the main board. The main board can be a printed circuit board. The semiconductor devices 100 can be chips or discrete devices, which are not limited by the present application.

[0059] It should be noted that for different electronic devices, the plurality of semiconductor devices 100 in the circuit board assembly is different. In the embodiments of the present application, the semiconductor devices in the circuit board assembly can include any one or any combination of reconfigurable receivers, reconfigurable filters, reconfigurable capacitor combinations, switch matrices, adjustable attenuators, and adjustable phase shifters, which are not limited by the present application. It should be noted that the above-mentioned semiconductor devices 100 all include radio frequency switches. Furthermore, the semiconductor devices 100 can also include other devices, such as passive devices, to form a circuit that implements the required function.

[0060] The radio frequency switch can be made of a phase change material, i.e., a phase change radio frequency switch. The phase change material has a thermal phase change characteristic and can realize fast conversion between a low-resistance crystalline state and a high-resistance amorphous state. If the phase change radio frequency switch uses a silicon substrate or a silicon carbide SiC substrate with high thermal conductivity, the phase change from the crystalline state to the amorphous state of the phase change material can be achieved. However, the phase change radio frequency switch using the silicon substrate or the silicon carbide SiC substrate has problems such as poor harmonic performance, signal leakage, high nonlinearity, and low Q value of integrated passive devices. If the phase change radio frequency switch is manufactured using the glass substrate 1, the above problems do not exist. However, when the phase change radio frequency switch using the glass substrate 1 is turned off, the radio frequency signal is easily leaked to the control end of the heater.

[0061] To improve the off-isolation of the phase change radio frequency switch of the glass substrate 1, an embodiment of the present application provides a semiconductor device 100 with an improved structure, specifically a chip. For example, when applied to a radio frequency system, the semiconductor device 100 is a chip integrated with a radio frequency circuit. Referring to FIG. 2, the semiconductor device 100 includes a glass substrate 1, a phase change switch module 2, and a spiral inductor 3. The glass substrate 1 has a first surface 11 and a second surface 12, and the first surface 11 and the second surface 12 are oppositely arranged. The glass substrate 1 can be borosilicate glass, alkali-free glass, or quartz glass, and can also be glass modified by a composite high-heat-dissipation material (such as graphene, metal, boron nitride BN, etc.), or a composite glass substrate 1 with a heat dissipation structure. In some examples of the present application, the glass substrate 1 is quartz glass with a relatively high melting point. The thickness of the glass substrate 1 is selected according to actual needs. For example, the thickness of the glass substrate 1 is 400 μm.

[0062] Referring back to FIG. 2, the phase change switch module 2 includes a heater 21 and a phase change switch 22, and the heater 21 and the phase change switch 22 are sequentially stacked on the first surface 11.

[0063] The spiral inductor 3 includes a plurality of glass vias TGV31, a plurality of first metal interconnection lines 32, and at least one second metal interconnection line 33. The plurality of glass vias TGV31 each penetrates the glass substrate 1. The plurality of glass vias TGV31 can be arranged at intervals along the first direction F. The plurality of first metal interconnection lines 32 are formed on the first surface 11 of the glass substrate 1 and are arranged at intervals. The number of the second metal interconnection line 33 in the spiral inductor 3 can be one, two, or more, which is not limited in the present application. The second metal interconnection line 33 is formed on the second surface 12 of the glass substrate 1 and is arranged at intervals. The projection of the second metal interconnection line 33 on the first surface 11 is located between two adjacent first metal interconnection lines 32, respectively. The plurality of first metal interconnection lines 32 and the second metal interconnection line 33 interleave to connect two adjacent glass vias TGV31 of the plurality of glass vias TGV31, thereby forming a 3D spiral structure. One first metal interconnection line 32 connects a glass via TGV31 at one end of the spiral inductor 3 to the heater 21, and the other first metal interconnection line 32 connects a glass via TGV31 at the other end of the spiral inductor 3 to the heating control circuit.

[0064] Therefore, the spiral inductor 3 integrated with the glass vias TGV31 has a 3D structure and a high Q value. The heater 21 is connected to the heating control circuit through the spiral inductor 3. The heating control circuit can include a pulse generation circuit, which can send a voltage or current pulse to the heater 21 to make the phase change material in the phase change switch 22 crystallize or amorphize. The phase change switch 22 can be a radio frequency switch or a transceiver switching switch, which is not limited in the present application.

[0065] Taking the phase change switch 22 as a radio frequency switch as an example, the spiral inductor 3 is taken as a metal choke inductor, which is connected in series between the heater 21 and the heater control circuit in the phase change switch module 2, thereby reducing the leakage of radio frequency power signals to the control end of the heater 21 and improving the off-isolation of the radio frequency switch. The semiconductor device 100 of the embodiment of the present application can effectively reduce radio frequency leakage and nonlinearity. Moreover, the 3D spiral inductor is also conducive to the miniaturization, integration, and reconfigurability of the chip.

[0066] It should be noted that the spiral inductor 3 can be a single-turn inductor or a multi-turn inductor, which is not limited in the present application. Moreover, in some embodiments of the present application, as shown in FIG. 3, the semiconductor device 100 includes two spiral inductors 3, which are connected to two ends of the heater 21, respectively. Moreover, the two spiral inductors 3 are also connected to two interfaces of the heating control circuit. The two spiral inductors 3 are connected in series at two control ends of the heating control circuit, thereby further improving the off-isolation of the radio frequency switch.

[0067] And, the plurality of glass vias TGV31 in the spiral inductor 3 can be a laminated structure. The glass via TGV31 includes a via adhesive layer 311 and a conductive metal layer 312 as shown in FIG. 4. The via adhesive layer 311 can be a titanium Ti layer covering the via in the glass substrate 1. The conductive metal layer 312 can be a chromium Cr layer or a copper layer. The first metal interconnection line 32 and the second metal interconnection line 33 can be made of the same material or different materials, which is not limited in the present application. Taking the first metal interconnection line 32 as an example, the first metal interconnection line 32 is a laminated structure. The first metal interconnection line 32 specifically includes a substrate adhesive layer 321 and a metal layer 322 as shown in FIG. 5. The substrate adhesive layer 321 covers the first surface 11 of the glass substrate 1. For example, the substrate adhesive layer 321 is a titanium Ti layer. The metal layer 322 covers the substrate adhesive layer 321. For example, the material of the metal layer 322 is copper Cu, gold Au, tungsten W, or aluminum Al, etc. In addition, the thickness of the substrate adhesive layer 321 can be 20 nm. The thickness of the metal layer 322 is in the order of microns.

[0068] It should be noted that the spiral inductor 3 further includes a first inductor electrode 34 and a second inductor electrode 35 as shown in FIG. 6. The first inductor electrode 34 and the second inductor electrode 35 are respectively connected to the outer ends of two first metal interconnection lines located at the two side ends of the plurality of first metal interconnection lines 32. The first inductor electrode 34 and the second inductor electrode 35 can facilitate the connection of two interfaces of the heating control circuit. The first inductor electrode 34 is used to connect with the heating control circuit, and the second inductor electrode 34 is used to connect with the heater.

[0069] For example, in some embodiments of the present application, the phase change switch 22 includes a heat-conductive layer 221 and a phase change material layer 222 as shown in FIG. 7. The heat-conductive layer 221 covers the heater 21. The phase change material layer 222 is arranged on the side of the heat-conductive layer 221 away from the heater 21. The heat-conductive layer 221 can ensure efficient heat transfer of the heater 21 to the phase change material layer 222.

[0070] The heat-conductive layer 221 can be made of an electrically insulating material with high thermal conductivity, such as aluminum nitride AlN, aluminum oxide Al2O3, beryllium oxide BeO, silicon carbide SiC, diamond, or diamond-like carbon, etc. x O y Therefore, the heat-conductive layer 221 can also serve as an electrical insulation between the heater 21 and the phase change material layer 222.

[0071] The material of the phase change material layer 222 includes germanium antimony tellurium compound Ge2Sb2Te5, tritellurium diantimony Sb2Te3, antimony telluride Sb2Te, germanium antimony compound Ge x Sb 1-xThe phase change material can be a phase change material of different systems, such as a phase change material of a Ge-Sb-Te compound Ge2Sb2Te5, a Ge-Sb-Te compound GeSb2Te4, a Ti-Sb-Te compound Ti-Sb2Te3, an In-Sb-Te compound In-Sb2Te3, an In-Ge-Te compound In-Ge2Sb2Te5, or a Ge-Te compound GeTe.

[0072] In some embodiments of the present application, the phase change material of the phase change material layer 222 is GeTe. The crystalline GeTe thin film has a low resistivity and a metal-like property at room temperature. The amorphous GeTe thin film has a super-high resistivity and a high impedance ratio of 10 5 Therefore, the phase change switch 22 has a high isolation degree in the off state, and has a low insertion loss in the on state.

[0073] If the phase change switch 22 is a radio frequency switch, and with reference to FIG. 7, the phase change switch 22 further includes a radio frequency electrode 223 covering the phase change material layer 222. The radio frequency electrode 223 is used to connect with a radio frequency circuit. In addition, the phase change switch 22 can further include a ground electrode 224, which can cover the heater 21 and connect with other ground electrodes 224 or a ground layer. Thus, the phase change switch 22 can be a grounded coplanar waveguide (CPW). The ground electrode 224 can make the signal of the radio frequency electrode 223 leak to other areas as low as possible, and enhance the isolation degree of the phase change switch 22.

[0074] For example, as shown in FIG. 7 and FIG. 8, the phase change switch 22 includes two radio frequency electrodes 223 and two ground electrodes 224. The two radio frequency electrodes can be a first radio frequency electrode 223a and a second radio frequency electrode 223b. The first radio frequency electrode 223a and the second radio frequency electrode 223b are respectively connected to opposite ends of the phase change material layer 222 and connected with a radio frequency circuit. The other two ground electrodes 224 cover the two ends of the heater 21 along the length direction, and the ground electrodes 224 have an irregular shape.

[0075] The material of the radio frequency electrode 223 and the material of the ground electrode 224 can be the same or different, which is not limited in the present application. The radio frequency electrode 223 and the ground electrode 224 can each include only a metal layer, or can be a laminated structure including an adhesive layer and a metal layer, which is not limited in the present application. The adhesive layer covers the phase change material layer 222 or the heater 21. For example, the adhesive layer can be a titanium Ti layer. The material of the metal layer includes any one of gold Au, aluminum Al, copper Cu, and tungsten W. In some examples of the present application, the radio frequency electrode 223 and the ground electrode 224 are both a laminated structure of a titanium Ti layer and a gold Au layer.

[0076] In addition, in order to further improve the heat dissipation speed of the phase change switch 22 and the heater 21 in the semiconductor device 100, so as to meet the amorphous quenching rate requirement of the phase change material layer 222 in the phase change switch 22. In some embodiments of the present application, the phase change switch module 2 further comprises a heat dissipation layer 23 and an insulating layer 24 as shown in FIG. 9. The heat dissipation layer 23 covers part of the first surface 11 of the glass substrate 1. The insulating layer 24 is arranged between the heat dissipation layer 23 and the phase change switch 22. The side surface of the insulating layer 24 away from the heat dissipation layer 23 is formed with a groove 241, and the heater 21 is arranged in the groove 241. The insulating layer 24 can avoid the surface parasitic conduction effect between the upper heater 21 and the heat dissipation layer 23. In addition, the thermal conductivity of the heat dissipation layer 23 is greater than or equal to 35 W / (m·k). The heat dissipation layer 23 has a high thermal conductivity, which improves the temperature drop rate of the heater 21, so as to meet the amorphous quenching rate requirement of the phase change material in the phase change switch 22. Thus, the problem that the phase change switch 22 cannot be turned off on the glass substrate 1 is solved.

[0077] Therefore, the material of the heat dissipation layer 23 can include any one or any combination of aluminum nitride AlN, diamond and sapphire. These materials all have high thermal conductivity, and the thermal conductivity from high to low is diamond, aluminum nitride AlN (single crystal), sapphire (Al2O3 24), silicon nitride SiN (alpha polycrystaline). In addition, the heat dissipation layer 23 can be made by a thin film deposition process. For example, the heat dissipation layer 23 can be formed on the first surface 11 of the glass substrate 1 by a physical vapor deposition process.

[0078] Based on the material requirement of the heat dissipation layer 23, in some embodiments of the present application, the material of the heat dissipation layer 23 is an aluminum nitride AlN thin film, which not only has a high thermal conductivity, but also has a mature large-area thin film growth capability. Compared with using a whole piece of aluminum nitride AlN, diamond or sapphire as the heat dissipation layer 23, using the physical vapor deposition method to obtain the aluminum nitride AlN thin film can reduce the manufacturing cost. At the same time, the heat dissipation layer 23 of the aluminum nitride AlN thin film can be compatible with the 400℃ temperature limit of the complementary metal oxide semiconductor process in the subsequent process.

[0079] It should be noted that the material of the insulating layer 24 includes one or both of silicon nitride and silicon dioxide SiO2, which is not limited in the present application. Both of these two insulating materials have good insulating properties. In some embodiments of the present application, the material of the insulating layer 24 is silicon dioxide SiO2.

[0080] In addition, the material composition of the heater 21 includes any one or a combination of nitrides of tungsten W, nitrides of nickel Ni, nitrides of titanium Ti, nitrides of tantalum Ta, or any one of nickel-chromium alloy NiCr and nickel-chromium-silicon alloy NiCrSi. Therefore, the heater 21 has the advantages of minimal or substantially no electromigration, thermal stress migration, and / or agglomeration.

[0081] In some embodiments of the present application, as shown in FIG. 10, the heater 21 is a multi-layer thin film structure, and the entire groove wall and groove bottom of the groove 241 in the insulating layer 24 are sequentially formed with a bonding layer 211, a protective layer 212, and a heating layer 213. The bonding layer 211 can enhance the adhesion between the heater 21 and the insulating layer 24. The bonding layer can be titanium Ti. The protective layer 212 can be titanium nitride TiN. The heating layer 213 needs to be made of a material with a high melting point (about 3700K), such as tungsten W, which has a linear, positive temperature coefficient of resistance and high thermal conductivity, and is conducive to heat conduction to the upper thermal conductive layer 221. Moreover, the heating layer 213 can be formed by Damascene process, dry etching or other suitable process, which is not limited in the present application. The protective layer 212 can avoid the corrosion problem caused by the tungsten W thin film deposition precursor gas during the manufacturing of the heating layer 213.

[0082] Moreover, the heater 21 can also include two heater electrodes 210 as shown in FIG. 11, which are a first heater electrode 210a and a second heater electrode 210b. The first heater electrode 210a and the second heater electrode 210b are respectively connected to the second inductor electrodes 34 of the two spiral inductors 3. The two heater electrodes 210 shown in FIG. 11 respectively cover the two ends of the heating layer 213 along the length direction (Y axis). The first radio frequency electrode 223a and the second radio frequency electrode 223b respectively cover the two ends of the phase change material layer 222 along the width direction (X axis). The width direction of the phase change material layer 222 is the same as the width direction of the heating layer 213.

[0083] The structure of the phase change switch 22 is described above, and in order to further understand the technical effects of the phase change switch 22 in the semiconductor device 100, the phase change switch 22 in the semiconductor device 100 shown in FIG. 12 and the phase change switch 22 in the semiconductor device 100 shown in FIG. 9 are respectively simulated and analyzed. The heat dissipation layer 23 of the phase change switch 22 in the semiconductor device 100 shown in FIG. 9 is an aluminum nitride AlN thin film with a thickness of 3um.

[0084] FIG. 13 shows simulation results of the phase change switch 22 in the semiconductor device 100 shown in FIG. 12. In FIG. 13, the temperature difference △T0 of the phase change material from the melting point temperature to the phase change temperature is 620℃, and the amorphization time △t0 is 1300ns (nanoseconds). According to FIG. 13, it can be calculated that the quenching rate of the phase change switch 22 is 4.7E8K / s (Kelvin per second), which does not meet the requirement that the quenching rate is greater than 1E9K / s.

[0085] FIG. 14 shows simulation results of the phase change switch 22 in the semiconductor device 100 of the embodiment of the application shown in FIG. 9. In FIG. 14, the temperature difference △T of the phase change material from the melting point temperature to the phase change temperature is 730℃, and the amorphization time △t is 450ns. According to FIG. 14, it can be calculated that the phase change switch 22 still has a quenching rate of 1.62E9K / s, which meets the requirement that the quenching rate is greater than 1E9K / s.

[0086] In addition, the heat dissipation layer 23 with different thicknesses of the phase change switch 22 in the semiconductor device 100 of the embodiment of the application is simulated and analyzed. The heat dissipation layer 23 adopts an aluminum nitride AlN thin film.

[0087] FIG. 15 shows simulation results of the heat dissipation layer 23 with different thicknesses of the phase change switch 22 in the semiconductor device 100 shown in FIG. 9. In FIG. 15, line type 1 represents that the thickness of the aluminum nitride AlN heat dissipation layer 23 is 1um, line type 2 represents that the thickness of the aluminum nitride AlN heat dissipation layer 23 is 2um, line type 3 represents that the thickness of the aluminum nitride AlN heat dissipation layer 23 is 3um, line type 4 represents that the thickness of the aluminum nitride AlN heat dissipation layer 23 is 4um, and line type 5 represents that the thickness of the aluminum nitride AlN heat dissipation layer 23 is 5um. As can be seen from FIG. 15, when the thickness of the aluminum nitride AlN heat dissipation layer 23 is greater than or equal to 3um, the phase change switch 22 can meet the requirement that the quenching rate is greater than 1E9K / s. Therefore, the aluminum nitride AlN with a thickness of 3um can be used as the heat dissipation layer 23, which not only meets the requirement of the quenching rate, but also has lower process time and cost.

[0088] In addition to the spiral inductor 3 described above, the integrated passive devices (IPD) in the semiconductor device 100 of the embodiment of the application can also include a capacitor 4 arranged on the first surface 11 of the glass substrate 1 in some embodiments of the application, as shown in FIG. 16 and FIG. 17. In addition, the capacitor 4 can be connected with the phase change switch 22 described above. Thus, circuit designs such as a bridge, a phase shift topology, etc. can be constructed, and more complex circuit functions can be realized.

[0089] And, in some embodiments of the present application, continuing to refer to FIG. 16 and FIG. 17, the capacitor 4 includes a first electrode plate 41, a dielectric layer 42, and a second electrode plate 43. The first electrode plate 41, the dielectric layer 42, and the second electrode plate 43 are sequentially stacked. The first electrode plate 41 and the second electrode plate 43 can each include only a metal layer, or can each be a laminated structure including an adhesive layer and a metal layer, which is not limited in the present application. The adhesive layer is covered on the phase change material layer 222 or the heater 21. For example, the adhesive layer can be a titanium Ti layer. The material composition of the metal layer includes any one of gold Au, aluminum Al, copper Cu, and tungsten W. In some examples of the present application, the radio frequency electrode 223 and the ground electrode 224 are each a laminated structure of a titanium Ti layer and a gold Au layer.

[0090] The dielectric layer 42 can include any one or any several of silicon dioxide SiO2, silicon nitride Si x N y , aluminum nitride AlN, tantalum pentoxide Ta2O5, etc. The material of the dielectric layer 42 is the same as the material of the insulating layer 24, and both can be made by the same patterning process, thereby reducing the process complexity. For example, the material of the dielectric layer 42 is silicon dioxide SiO2. For another example, the material of the dielectric layer 42 is silicon nitride Si x N y .

[0091] In some embodiments of the present application, the patterning process can refer to a process including photolithography, or a process including photolithography and etching steps, and can also include printing, inkjet, and other processes for forming a predetermined pattern. Photolithography refers to a process of forming a pattern using photoresist, mask plate, and exposure machine, including film forming, exposure, development, and other processes. The corresponding patterning process can be selected according to the structure formed in the present application. In the embodiment of the present application, the one-time patterning process is described by taking the example of forming different exposure areas by one-time mask exposure process, and then performing multiple etching, ashing, and other removal processes on different exposure areas to finally obtain the expected pattern.

[0092] In addition, in some embodiments of the present application, the semiconductor device 100 further includes a resistor 5 as shown in FIG. 18 and FIG. 19, which is disposed on the first surface 11 of the glass substrate 1. And the resistor 5 can be connected with the above-mentioned phase change switch 22. Similarly, circuit designs such as bridges, phase-shift topologies, etc. can be constructed to achieve more complex circuit functions.

[0093] For example, continuing to refer to FIG. 18 and FIG. 19, the above-mentioned resistor 5 includes a thin-film resistor layer 51, a first resistor electrode 52, and a second resistor electrode 53. The thin-film resistor layer 51 is covered on the first surface 11 of the glass substrate 1. The thin-film resistor layer 51 includes a thin-film material of any one of tantalum nitride TaN, titanium nitride TiN, and polysilicon. For example, the material of the thin-film resistor layer 51 is a titanium nitride TiN thin film. The titanium nitride TiN thin film resistor has a high degree of maturity in manufacturing technology, a high thermal conductivity, and a fast heat dissipation of the resistor 5. In addition, the material of the thin-film resistor layer 51 can be the same as the material of the heating layer 213 in the heater 21, and the two can be manufactured by the same patterning process.

[0094] The first resistor electrode 52 and the second resistor electrode 53 are respectively arranged on opposite sides of the thin-film resistor layer 51. The first resistor electrode 52 and the second resistor electrode 53 can also be made of the same material. The first resistor electrode 52 and the second resistor electrode 53 can be metal, or can both be a stacked structure including an adhesive layer and a metal layer, which is not limited in the present application. The adhesive layer is covered on the phase change material layer 222 or the heater 21. For example, the adhesive layer can be a titanium Ti layer. The material composition of the metal layer includes any one of gold Au, aluminum Al, copper Cu, and tungsten W. In some examples of the present application, the first resistor electrode 52 and the second resistor electrode 53 are both a stacked structure of a titanium Ti layer and a gold Au layer.

[0095] Therefore, the radio frequency electrode 223 and the grounding electrode 224 in the above-mentioned phase change switch 22, the first metal interconnection line 32 in the spiral inductor 3, the first electrode plate 41 and the second electrode plate 43 of the capacitor 4, and the first resistor electrode 52 and the second resistor electrode 53 in the resistor 5 can adopt the same material and structure. Therefore, they can be manufactured by the same patterning process, save multiple thin-film processes, and reduce costs.

[0096] The above is the structure and material of the semiconductor device 100 of the embodiment of the present application. For the circuit structure of the semiconductor device 100, FIG. 20 shows an equivalent circuit of a phase change switch 22 (such as a radio frequency switch) in the semiconductor device 100 in the related art. FIG. 21 shows an equivalent circuit of a phase change switch 22 (such as a radio frequency switch) in the semiconductor device 100 of one specific embodiment of the present application connected with two spiral inductors 3. In FIG. 20 and FIG. 21, C p1 is the parasitic capacitance between the heater 21 and one radio frequency electrode 223. L s is the parasitic inductance between the radio frequency electrode 223 and a radio frequency transmission line (for connection with a radio frequency circuit). R s is the parasitic resistance between the radio frequency electrode 223 and the radio frequency transmission line. C p is the parasitic capacitance between the radio frequency electrode 223 and the radio frequency transmission line. R heater is the equivalent resistance of the heater 21. Rpcm is the on-state equivalent resistance of the phase change material layer 222 in the phase change switch 22. pcm is the off-state equivalent capacitance of the phase change material layer 222 in the phase change switch 22. Heater Port 1 is at the first heater electrode 210a of the heater 210. Heater Port 2 is at the second heater electrode 210b of the heater 210. RF Port 1 is at the first radio frequency electrode 223a of the phase change switch 22. RF Port 2 is at the second radio frequency electrode 223b of the phase change switch 22. L is the spiral inductor 3.

[0097] To further illustrate the technical effect of the semiconductor device 100, the semiconductor device 100 shown in FIG. 20 and the semiconductor device 100 shown in FIG. 21 are tested. The phase change material layer 222 in the two semiconductor devices 100 is GeTe, and the experimental results of the phase change switches 22 are shown in Table 1:

[0098] Table 1 Comparison of experimental results of different phase change switches

[0099] S1in Table 1 21_on is the feed-in loss in the process of signal transmission from the first radio frequency electrode 223a to the second radio frequency electrode 223b when the phase change switch 22 is in the on state, R on is the equivalent resistance of the phase change switch 22 when the phase change switch 22 is in the on state. S2 1_off is the energy reflected back when the signal transmission from the first radio frequency electrode 223a to the second radio frequency electrode 223b is reflected back when the phase change switch 22 is in the off state. C off is the off-state equivalent capacitance. R on × C off is the quality factor of the phase change switch 22.

[0100] As can be seen from Table 1, compared with the semiconductor device 100 shown in FIG. 20, the semiconductor device 100 shown in FIG. 21 is additionally provided with the spiral inductor 3, and the off-state isolation S 21_off is improved from -39.95 dB to -42.7 dB, which optimizes the off-state isolation of the phase change switch 22. Moreover, the quality factor R on × C off of the semiconductor device 100 shown in FIG. 21 is reduced from 6.37 fs (femtosecond) to 4.64 fs, and the quality factor is improved by 28%.

[0101] In addition, the application also provides a manufacturing method of the semiconductor device 100. Referring to FIG. 22, the manufacturing method of the semiconductor device 100 includes the following steps:

[0102] S100: Forming a plurality of through glass vias TGV 31 in the glass substrate 1.

[0103] As an example, the glass substrate 1 can be first laser modified, i.e. inducing continuous modified regions in the glass substrate 1 by a pulsed laser. Then, as shown in (a) of FIG. 22, a plurality of vias 301 are etched in the laser modified glass substrate 1 using a wet etching process. The laser modified glass substrate 1 has a faster etching rate for the vias 301. Subsequently, as shown in (b) of FIG. 22, a seed layer 302 is deposited in the plurality of vias 301. Then, as shown in (c) of FIG. 22, the glass vias TGV 31 are formed by electroplating a metal (e.g. gold Au or copper Cu) in the plurality of vias 301 with the seed layer 302. Finally, the first surface 11 and the second surface 12 of the glass substrate 1 are polished using a chemical mechanical polishing (CMP) process.

[0104] S200: Forming a heat dissipation layer 23 on a portion of the first surface 11 of the glass substrate 1.

[0105] As an example, as shown in (d) of FIG. 22, the heat dissipation layer 23 is formed on a portion of the first surface 11 of the glass substrate 1 using a deposition process.

[0106] S300: Forming an insulating layer 24 on the heat dissipation layer 23.

[0107] As an example, as shown in (e) of FIG. 22, the insulating layer 24 is formed on the heat dissipation layer 23 using a deposition process.

[0108] S400: Forming a heater 21 and a plurality of first metal interconnection lines 32 on the first surface 11 of the glass substrate 1.

[0109] As an example, as shown in (f) of FIG. 22, the heater 21 can be first formed on the first surface 11 of the glass substrate 1. Then, as shown in (g) of FIG. 22, the plurality of first metal interconnection lines 32 are formed on the first surface 11 of the glass substrate 1.

[0110] S500: Forming a phase change switch 22 on the heater 21.

[0111] As an example, as shown in (h) of FIG. 22, the phase change switch 22 can be formed on the heater 21 by a deposition process.

[0112] S600: Forming at least one second metal interconnection line 33 on the second surface 12 of the glass substrate 1.

[0113] The projection of the second metal interconnection line 33 on the first surface 11 is located between two adjacent first metal interconnection lines 32, respectively. The first metal interconnection lines 32 and the second metal interconnection line 33 are staggered to connect two adjacent glass vias TGV31 in the plurality of glass vias TGV31. One first metal interconnection line 32 connects the glass via TGV31 at one side end to the heater 21, and the other first metal interconnection line 32 is used to connect the glass via TGV31 at the other side end to the heating control circuit.

[0114] As shown in (i) of FIG. 22, the second metal interconnection line 33 can be formed on the second surface 12 of the glass substrate 1 by a backside metallization process to achieve the interconnection of the glass via TGV31 and the second metal interconnection line 33. Thus, according to the above steps, the semiconductor device 100 described in the above embodiments can be manufactured.

[0115] In some embodiments of the present application, as shown in FIG. 23, the above S200 specifically includes:

[0116] S201: Forming a groove 241 on the side surface of the insulating layer 24 away from the heat dissipation layer 23.

[0117] As shown in (a) of FIG. 23, a selective etching can be performed on the side surface of the insulating layer 24 away from the heat dissipation layer 23 to form the groove 241.

[0118] S202: Forming the heater 21 in the groove 241.

[0119] As shown in (b) of FIG. 23, a bonding layer 211 (such as a titanium Ti layer) is first deposited in the groove 241. Then, as shown in (c) of FIG. 23, a protective layer 212 (such as titanium nitride TiN) is formed on the bonding layer. Then, as shown in (d) of FIG. 23, a heating layer 213, such as a thin-film resistive material, is deposited on the protective layer 212, and the thin-film resistive material covering the outer side area of the groove 241 is peeled off. Finally, a metal electrode thin film is formed on the thin-film resistive material and the insulating layer 24 by a deposition process, and other metal electrode thin films in the non-target area are peeled off to obtain the heater electrode 210. Thus, the heater 21 is formed. It should be noted that for the semiconductor device 100 with the capacitor 4, the first electrode plate 41 of the capacitor 4 is also formed at the same time when the metal electrode thin film is formed by the above deposition process.

[0120] In addition, as shown in FIG. 24, the above S500 specifically includes:

[0121] S501: Forming the heat conduction layer 221 on the heater 21.

[0122] As shown in (a) of FIG. 24, an initial thermal conductive layer 2210 is formed on the heater 21 by a deposition process. Then, as shown in (b) of FIG. 24, the initial thermal conductive layer 2210 is etched to leave only the thermal conductive material covering the upper surface of the heater 21 and a certain width of the periphery of the heater 21, and the thermal conductive material in other areas is etched away, to obtain the required thermal conductive layer 221.

[0123] S502: Forming a phase-change material layer 222 on the thermal conductive layer 221.

[0124] As shown in (c) of FIG. 24, an initial phase-change material layer 2220 is formed on the thermal conductive layer 221 by depositing the phase-change material. Then, as shown in (d) of FIG. 24, the phase-change material layer 2220 is etched to leave only the phase-change material covering the above-mentioned part of the thermal conductive layer 221, and the phase-change material in other areas is etched away, to obtain the required phase-change material layer 222.

[0125] It should be noted that for the semiconductor device 100 having the resistor 5 and the capacitor 4, after the thermal conductive layer 221 is formed on the heater 21, as shown in (a) of FIG. 25, the photoresist 01 (or hard mask) is used to protect the phase-change switch 22, the first metal interconnection line 32 of the spiral inductor 3 and the upper end (i.e., the first surface 11) of the glass via TGV 31, and the first electrode plate 41 of the capacitor 4. Then, as shown in (b) of FIG. 25, a thin-film resistor material is deposited on the first surface 11 of the glass substrate 1 by a deposition process, and the thin-film resistor material covering the phase-change switch 22, other devices and non-set areas is etched away, to obtain the thin-film resistor layer 51 of the required resistor 5. Then, as shown in (c) of FIG. 25, the photoresist (or hard mask) is covered on the thin-film resistor layer 51, and the photoresist (or hard mask) on the first electrode plate 41 of the capacitor 4 is etched away. Then, as shown in (d) of FIG. 25, a dielectric material can be deposited on the first electrode plate 41 of the capacitor 4 by a deposition process, and the dielectric material in the required area is retained, and the dielectric material in other areas is removed, to obtain the dielectric layer 42 of the required capacitor 4, and all the photoresist 01 (or hard mask) is etched away.

[0126] S503: Forming a radio frequency electrode 223 on the insulating layer 24, the thermal conductive layer 221 and the phase-change material layer 222, to obtain the phase-change switch 22.

[0127] As shown in (e) of FIG. 24, the radio frequency electrode 223 can be formed on the insulating layer 24, the thermal conductive layer 221 and the phase-change material layer 222 by a physical vapor deposition (PVD) process, to obtain the phase-change switch 22.

[0128] It is noted that in the above physical vapor deposition process, the ground electrode 224 of the phase change switch 22, the first inductive electrode 34 and the second inductive electrode 35 of the spiral inductor 3 can also be formed at the same time as the radio frequency electrode 223 of the phase change switch 22. The first heater electrode 210a and the second heater electrode 210b of the heater 21 can also be formed at the same time as the radio frequency electrode 223 of the phase change switch 22. Also, for the semiconductor device 100 having the resistance 5 and the capacitance 4, the first resistance electrode 52 and the second resistance electrode 53 of the resistance 5, the second electrode plate 43 of the capacitance 4, the first inductive electrode 34 and the second inductive electrode 35 of the spiral inductor 3, and the radio frequency electrode 223 and the ground electrode 224 in the phase change switch 22 are formed by the same physical vapor deposition process.

[0129] The above descriptions are only specific embodiments of the present application, and the protection scope of the present application is not limited thereto. Any person skilled in the art can easily think of changes or replacements within the technical scope disclosed by the present application, and all of them should be covered within the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

Claims

1. A semiconductor device, characterized by, The semiconductor device comprises: a glass substrate having a first surface and a second surface arranged oppositely; a phase change switch module comprising a heater and a phase change switch arranged in sequence on the first surface; a spiral inductor comprising: a plurality of glass through vias (TGVs) each penetrating the glass substrate and arranged in a first direction; a plurality of first metal interconnection lines formed on the first surface and distributed in a spaced manner; at least one second metal interconnection line formed on the second surface, and a projection of the second metal interconnection line on the first surface is located between two adjacent first metal interconnection lines; the plurality of first metal interconnection lines and the second metal interconnection line stagger to connect two adjacent glass through vias (TGVs) in the plurality of glass through vias (TGVs); one of the first metal interconnection lines connects a glass through via (TGV) at one end with the heater, and the other of the first metal interconnection lines connects a glass through via (TGV) at the other end with a heating control circuit.

2. The semiconductor device according to claim 1, wherein The semiconductor device comprises two spiral inductors, each of which is connected to one end of the heater and used to connect with the heating control circuit.

3. The semiconductor device according to claim 1 or 2, wherein The phase change switch module further comprises: a heat dissipation layer covering a partial area of the first surface of the glass substrate; the heat dissipation layer has a thermal conductivity greater than or equal to 35 W / (m·k); an insulating layer arranged in sequence between the heat dissipation layer and the phase change switch; the insulating layer is formed with a groove on a side away from the heat dissipation layer, and the heater is arranged in the groove.

4. The semiconductor device according to claim 3, wherein The material of the heat dissipation layer comprises any one or any combination of aluminum nitride (AlN), diamond, and sapphire.

5. The semiconductor device according to claim 3 or 4, wherein The heat dissipation layer is made by a thin film deposition process.

6. The semiconductor device according to any one of Claims 3 to 5, wherein The thickness of the heat dissipation layer is 2-5 um.

7. The semiconductor device according to any one of Claims 3 to 6, wherein The phase change switch comprises: a heat conduction layer covering the heater; a phase change material layer arranged in sequence on a side of the heat conduction layer away from the heater.

8. The semiconductor device according to any one of Claims 1-7, wherein The semiconductor device further comprises: a capacitor arranged on the first surface of the glass substrate and connected with the phase change switch.

9. The semiconductor device of claim 8, wherein, The capacitor comprises a first electrode plate, a dielectric layer, and a second electrode plate arranged in sequence, and the material of the dielectric layer is the same as that of the insulating layer.

10. The semiconductor device according to any one of Claims 1-9, wherein The semiconductor device further comprises: a resistor arranged on the first surface of the glass substrate; the resistor is connected with the phase change switch.

11. A method of manufacturing the semiconductor device according to any one of 1 to 10, wherein The method comprises the following steps: forming a plurality of glass through vias (TGVs) in a glass substrate; forming a heater and a plurality of first metal interconnection lines distributed in a spaced manner on a first surface of the glass substrate; forming a phase change switch on the heater; forming at least one second metal interconnection line on a second surface of the glass substrate; The projection of the second metal interconnection line on the first surface is located between two adjacent first metal interconnection lines; the first metal interconnection lines and the second metal interconnection line stagger to connect two adjacent glass through vias TGVs; one of the first metal interconnection lines connects a glass through via TGV at one end to the heater, and the other of the first metal interconnection lines connects a glass through via TGV at the other end to the heating control circuit.

12. The method of fabricating a semiconductor device according to Claim 11, wherein The method for manufacturing the semiconductor device further comprises: forming a heat dissipation layer on a part of the first surface of the glass substrate; forming an insulating layer on the heat dissipation layer.

13. The method of fabricating a semiconductor device according to Claim 12, wherein The method for manufacturing the semiconductor device further comprises: forming a groove on a side surface of the insulating layer away from the heat dissipation layer; forming the heater in the groove.

14. The method of fabricating a semiconductor device according to Claim 12, wherein The method for manufacturing the semiconductor device further comprises: forming a heat conduction layer on the heater; forming a phase change material layer on the heat conduction layer; forming a radio frequency electrode on the insulating layer, the heat conduction layer and the phase change material layer to obtain the phase change switch.

15. An electronic device comprising: a circuit board; the semiconductor device according to any one of claims 1-10, which is disposed on the circuit board.

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