Power module having improved switching performance and method for improving switching performance of a power module

The power module design with bridge structures and adjusted Kelvin connections optimizes gate coupling, addressing stray inductance and imbalanced current sharing issues, enhancing switching performance and stability.

WO2025247497A1PCT designated stage Publication Date: 2025-12-04HITACHI ENERGY LTD
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Patent Information

Application Number
PCT/EP2024/065008
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Filing Date
2024-05-31
Publication Date
2025-12-04

AI Technical Summary

Technical Problem

Wide band-gap power semiconductor devices face challenges with stray inductance and imbalanced current sharing due to poor gate control loop design, leading to critical voltage overshoots and oscillations.

Method used

A power module design with strategically placed bridge structures and adjusted Kelvin connections to optimize gate coupling, reducing stray inductance and balancing inductance across semiconductor devices.

Benefits of technology

The design achieves improved switching performance by minimizing voltage overshoots and oscillations, ensuring stable and fast switching capabilities.

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Abstract

A power module (10) comprising a carrier (1), a plurality of semiconductor devices (2) and at least one bridge structure (5, 5A, 5B) is provided. The carrier (1) comprises a mounting surface (1M) on which the semiconductor devices (2) are arranged along an upper line (HL) and along a lower line (LL). The mounting surface (1M) comprises a plurality of main metallization areas (3, 3A, 3B, 3C) and a plurality of auxiliary metallization areas (4A, 4B, 4C, 4D), wherein the main and auxiliary metallization areas (3, 3A, 3B, 3C, 4, 4A, 4B, 4C, 4D) are spaced apart from each other, and wherein the main metallization areas (3, 3A, 3B, 3C) provide locations (8, 8P) for power terminals (7, 7P) of the power module (10) configured for electrically contacting the semiconductor devices (2). In top view, the at least one bridge structure (5, 5A, 5B) bridges over one of the main metallization areas (3, 3A, 3B, 3C) for electrically connecting another one of the main metallization areas (3, 3A, 3B, 3C) with one of the auxiliary metallization areas (4, 4A, 4B, 4C, 4D). Moreover, a method for improving switching performance of a power module is provided. Significant
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Citation Information

Patent Citations

  • Power modules for ultra-fast wide-bandgap power switching devices

    US20210398875A1